JP3114335B2 - Focusing method in scanning electron microscope - Google Patents
Focusing method in scanning electron microscopeInfo
- Publication number
- JP3114335B2 JP3114335B2 JP04071087A JP7108792A JP3114335B2 JP 3114335 B2 JP3114335 B2 JP 3114335B2 JP 04071087 A JP04071087 A JP 04071087A JP 7108792 A JP7108792 A JP 7108792A JP 3114335 B2 JP3114335 B2 JP 3114335B2
- Authority
- JP
- Japan
- Prior art keywords
- focusing
- sample
- electron beam
- signal
- scanning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【0001】[0001]
【産業上の利用分野】本発明は、自動的に焦点合わせを
行うための焦点合わせ機能を有した走査電子顕微鏡に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning electron microscope having a focusing function for automatically focusing.
【0002】[0002]
【従来の技術】走査電子顕微鏡などの焦点合わせでは、
対物レンズの励磁をステップ状に変化させ、各励磁状態
(集束状態)において、試料の特定領域を電子ビームで
走査し、各走査毎に試料からの2次電子あるいは反射電
子を検出し、この検出信号強度から信号強度の最大値の
時がフォーカス点として、その時の励磁状態に対物レン
ズを固定するようにしている。2. Description of the Related Art In focusing such as a scanning electron microscope,
The excitation of the objective lens is changed stepwise, each energized when
In the (focusing state) , a specific region of the sample is scanned with an electron beam, secondary electrons or reflected electrons from the sample are detected for each scan, and the maximum value of the signal intensity from the detected signal intensity is used as a focus point. The objective lens is fixed in the excitation state at that time.
【0003】[0003]
【発明が解決しようとする課題】上述した焦点合わせに
おいては、試料の特定走査領域全体からの信号を利用し
ており、その特定走査領域の平均的な信号によって焦点
合わせが行われる。その結果、試料の特定領域が平均的
に凹凸が存在する場合は良いが、部分的に凹凸の程度が
相違すると、特定領域の一部の注目点には正確に焦点が
合わなくなる。例えば、特定走査領域中に凹凸が激しい
部分と比較的滑らかな部分とが存在し、比較的滑らかな
部分に焦点を合わせて像の観察を行いたい場合でも、従
来の焦点合わせでは、むしろ凹凸の激しい部分に焦点が
合いがちとなる。In the focusing described above, signals from the entire specific scanning area of the sample are used, and focusing is performed by an average signal of the specific scanning area. As a result, it is good if the specific region of the sample has irregularities on average, but if the degree of the irregularities is partially different, the focus of a part of the specific region is not accurately focused. For example, when there are a portion with a large unevenness and a relatively smooth portion in a specific scanning area, and it is desired to observe an image by focusing on a relatively smooth portion, the conventional focusing is more effective than the conventional focusing. Intense parts tend to be in focus.
【0004】本発明は、このような点に鑑みてなされた
もので、その目的は、短時間に試料の注目部分に正確に
焦点合わせを行うことができる走査電子顕微鏡における
焦点合わせ方法を実現するにある。The present invention has been made in view of the above circumstances, and an object thereof is to realize a focusing method in a scanning electron microscope capable of accurately focusing on a target portion of a sample in a short time. It is in.
【0005】[0005]
【課題を解決するための手段】本発明に基づく走査電子
顕微鏡における焦点合わせ方法は、電子ビームを試料上
に集束するための対物レンズと、試料上の電子ビームの
照射位置を走査するための走査手段と、試料への電子ビ
ームの照射によって得られた信号を検出する検出器と、
対物レンズの励磁強度を変えることにより試料上の電子
ビームの集束状態をステップ状に変化させる手段とを備
えた走査電子顕微鏡において、各集束状態のときに試料
を電子ビームで走査し、この走査により得られた検出器
の検出信号を処理して合焦点の程度を表わす評価値信号
を得、各電子ビームの集束状態ごとの評価値に応じて電
子ビームの焦点合わせを行うようにした焦点合わせ方法
において、各集束状態で試料上の任意の領域の走査像に
関する検出器の検出信号をメモリに記憶させておき、こ
の走査像中の所望領域を選択し、その選択領域での検出
信号を前記メモリから読み出し、この読み出した検出信
号に基づいて焦点合わせを行うようにしたことを特徴と
している。SUMMARY OF THE INVENTION A focusing method in a scanning electron microscope according to the present invention comprises an objective lens for focusing an electron beam on a sample and a scanning method for scanning an irradiation position of the electron beam on the sample. Means, and a detector for detecting a signal obtained by irradiating the sample with the electron beam,
The scanning electron microscope the focusing state of the electron beam on the sample and means for changing stepwise by changing the excitation strength of the objective lens, specimen at each focusing state
It was scanned with an electron beam, obtained by the scanning detector
Detection signal processing the reputation value signal representative of the degree of focus, in the focusing method to perform focusing of the electron beam in accordance with the evaluation value for each focusing states of the electron beams, each focusing condition of the in scanned image of any area on the sample
The detection signal of the related detector is stored in a memory, and a desired area in the scanned image is selected, and the detection in the selected area is performed.
A signal is read from the memory, and focusing is performed based on the read detection signal.
【0006】[0006]
【作用】本発明に基づく走査電子顕微鏡における焦点合
わせ方法は、まず、各集束状態で試料上の任意の領域の
走査し、得られた検出器の検出信号をメモリに記憶させ
る。次に、この走査像中の所望領域を選択し、その選択
領域の検出信号を前記メモリから読み出し、この読み出
した検出信号に基づいて焦点合わせを行う。In the scanning electron microscope according to the present invention, the focusing method firstly focuses on an arbitrary area on the sample in each focusing state.
Scan and store the obtained detector signal in the memory
You. Next, a desired area in this scanned image is selected, and the selection is performed.
Reading the area detection signal from the memory;
Focusing is performed based on the detected signal.
【0007】[0007]
【実施例】以下、図面を参照して本発明の実施例を詳細
に説明する。図1は、本発明の方法を実施するための走
査電子顕微鏡の一例を示しており、1は電子銃である。
電子銃1から発生した電子ビームEBは、集束レンズ2
と対物レンズ3によって試料4上に細く集束される。ま
た、電子ビームEBは、偏向コイル5によって偏向さ
れ、試料4上の電子ビームの照射位置は走査される。試
料4への電子ビームの照射によって発生した2次電子
は、2次電子検出器6によって検出される。検出器6の
検出信号は、増幅器7によって増幅された後、メモリ2
1に供給されて記憶される。また、増幅器7によって増
幅された検出器6の検出信号は、加算器9にも供給され
る。その後、輝線信号発生回路15から参照信号を供給
される読み出し制御回路22によって、メモリ21か
ら、検出信号が読み出され、ハイパスフィルタ8に供給
される。ハイパスフィルタ8を通過した信号はピーク検
出回路13に供給される。ピーク検出回路13で検出さ
れたピーク値は、制御回路14に供給される。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 shows an example of a scanning electron microscope for carrying out the method of the present invention, where 1 is an electron gun.
The electron beam EB generated from the electron gun 1 is
And the objective lens 3 is narrowly focused on the sample 4. Further, the electron beam EB is deflected by the deflection coil 5, and the irradiation position of the electron beam on the sample 4 is scanned. Secondary electrons generated by the irradiation of the sample 4 with the electron beam are detected by the secondary electron detector 6. The detection signal of the detector 6 is amplified by the amplifier 7 and then stored in the memory 2.
1 and stored. Also increased by the amplifier 7
The widened detection signal of the detector 6 is also supplied to the adder 9.
You. After that, the reference signal is supplied from the bright line signal generation circuit 15.
The read control circuit 22 reads the memory 21
And the detection signal is read out and supplied to the high-pass filter 8.
Is done. Signal passing through the high pass filter 8 is supplied to a peak detection circuit 13. The peak value detected by the peak detection circuit 13 is supplied to the control circuit 14.
【0008】加算器9では、増幅器7からの信号と、輝
線信号発生回路15からの信号を加算し、加算した信号
を陰極線管16に供給する。17は操作盤であり、操作
盤17は、輝線信号発生回路15や制御回路14に指示
信号を送る。制御回路14は、対物レンズ3の駆動電源
18と偏向コイル5の駆動電源19を制御する。このよ
うな構成の動作は次の通りである。The adder 9 adds the signal from the amplifier 7 and the signal from the bright line signal generation circuit 15 and supplies the added signal to the cathode ray tube 16. Reference numeral 17 denotes an operation panel. The operation panel 17 sends an instruction signal to the bright line signal generation circuit 15 and the control circuit 14. The control circuit 14 controls a drive power supply 18 for the objective lens 3 and a drive power supply 19 for the deflection coil 5. The operation of such a configuration is as follows.
【0009】通常の2次電子像を観察する場合、操作盤
17からの指示信号に基づき、制御回路14は駆動電源
19を制御し、駆動電源19から所定の走査信号が偏向
コイル5に供給され、試料4上の任意の領域が電子ビー
ムEBによって走査される。試料4への電子ビームの照
射によって発生した2次電子は、検出器6によって検出
される。その検出信号は、増幅器7を介して偏向コイル
5への走査信号と同期した陰極線管16に供給され、陰
極線管16には試料の任意の領域の2次電子像が表示さ
れる。When a normal secondary electron image is observed, the control circuit 14 controls a driving power supply 19 based on an instruction signal from the operation panel 17, and a predetermined scanning signal is supplied from the driving power supply 19 to the deflection coil 5. An arbitrary region on the sample 4 is scanned by the electron beam EB. Secondary electrons generated by irradiating the sample 4 with the electron beam are detected by the detector 6. The detection signal is supplied to the cathode ray tube 16 synchronized with the scanning signal to the deflection coil 5 via the amplifier 7, and the cathode ray tube 16 displays a secondary electron image of an arbitrary region of the sample.
【0010】次に、通常の電子ビームの焦点合わせ動作
を行う場合について説明する。操作盤17を操作し、焦
点合わせモードの指示を行うと、制御回路14は、対物
レンズ3の駆動電源18と偏向コイル5の駆動電源19
とを制御する。この結果、駆動電源18は対物レンズ3
にステップ状に変化する励磁電流を供給し、駆動電源1
9はステップ状の励磁電流の変化の都度、試料の所定領
域の操作を行うための走査信号を偏向コイル5に供給す
る。各ステップ状の励磁電流によるフォーカスの状態に
おける検出器6によって検出された2次電子検出信号
は、増幅器7によって増幅された後、メモリ21に供給
されて記憶される。その後、輝線信号発生回路15から
参照信号が供給されている読み出し制御回路22によっ
て、メモリ21に記憶された検出信号が読み出され、ハ
イパスフィルタ8に供給され直流分が除去された後、ピ
ーク検出回路13に供給される。Next, a case where a normal electron beam focusing operation is performed will be described. When the operation panel 17 is operated to give an instruction of the focusing mode, the control circuit 14 supplies a drive power supply 18 for the objective lens 3 and a drive power supply 19 for the deflection coil 5.
And control. As a result, the drive power supply 18
To the drive power supply 1
Numeral 9 supplies a scanning signal to the deflection coil 5 for operating a predetermined region of the sample every time the step-like excitation current changes. The secondary electron detection signal detected by the detector 6 in the focus state by each step-like excitation current is supplied to the memory 21 after being amplified by the amplifier 7.
Is stored. Then, from the bright line signal generation circuit 15
The read control circuit 22 supplied with the reference signal
As a result, the detection signal stored in the memory 21 is read, and
After being supplied to the bypass filter 8 and removing the DC component, it is supplied to the peak detection circuit 13.
【0011】ピーク検出回路13においては、対物レン
ズ3の各励磁ステップごとに得られたピーク値を記憶す
る。図2はこのときの記憶されたピーク値の変化を示し
ており、縦軸がピーク値、横軸が対物レンズ3の励磁強
度である。ピーク検出回路13は、記憶されたピーク値
の変化曲線の値が最大となる時の対物レンズ3の励磁強
度を検出し、その励磁強度値は制御回路14に供給され
る。制御回路14は、駆動電源18を制御してピークの
時の励磁強度に対物レンズ3を設定し、このようにして
焦点合わせ動作が行われる。The peak detection circuit 13 stores a peak value obtained for each excitation step of the objective lens 3. FIG. 2 shows a change in the stored peak value at this time, in which the vertical axis represents the peak value and the horizontal axis represents the excitation intensity of the objective lens 3. The peak detection circuit 13 detects the excitation intensity of the objective lens 3 when the value of the stored change curve of the peak value becomes the maximum, and the excitation intensity value is supplied to the control circuit 14. The control circuit 14 controls the driving power supply 18 to set the objective lens 3 to the excitation intensity at the peak, and thus the focusing operation is performed.
【0012】次に、本発明に基づく焦点合わせ動作を説
明する。まず、試料4の任意領域の2次電子像を陰極線
管16上に表示すると共に、輝線信号発生回路15から
の輝線信号を加算器9に供給する。この結果、陰極線管
16の画面上には、図3に示すように、2次電子像に重
ねて矩形状の輝線Lが表示される。この矩形の位置は、
操作盤17を操作することにより、任意に設定すること
ができる。操作者は、2次電子像を観察しながら、焦点
を合わせたい部分に矩形の輝線Lを移動させる。なお、
この際、矩形の位置と大きさが操作盤17によって任意
に変えられる。焦点を合わせたい部分への矩形の輝線の
設定動作が終了した後、操作盤17を操作し、焦点合わ
せモードの指示を行う。Next, the focusing operation according to the present invention will be described. First, a secondary electron image of an arbitrary region of the sample 4 is displayed on the cathode ray tube 16, and a bright line signal from the bright line signal generating circuit 15 is supplied to the adder 9. As a result, as shown in FIG. 3, a rectangular bright line L is displayed on the screen of the cathode ray tube 16 so as to overlap the secondary electron image. The location of this rectangle is
It can be set arbitrarily by operating the operation panel 17. The operator moves the rectangular bright line L to a portion to be focused while observing the secondary electron image. In addition,
At this time, the position and size of the rectangle can be arbitrarily changed by the operation panel 17. After the operation of setting a rectangular bright line to a portion to be focused is completed, the operation panel 17 is operated to give an instruction of a focusing mode.
【0013】この指示により、輝線信号発生回路15か
ら参照信号が供給されている読み出し制御回路22によ
って、輝線Lで囲まれた領域の検出信号のみが、メモリ
21から読み出され、ハイパスフィルタ8に供給され直
流分が除去された後、ピーク検出回路13に供給され
る。そして、制御回路14は、駆動電源18を制御して
ピークの時の励磁強度に対物レンズ3を設定する。ま
た、制御回路14は、矩形の輝線Lの情報を得、この情
報に基づいて駆動電源19を制御し、矩形の輝線Lで囲
まれた試料領域のみの電子ビームの走査を行う。従っ
て、焦点合わせは矩形の輝線Lで囲まれた試料領域の情
報に基づいて行われるため、試料の注目点に正確に焦点
が合うことになる。 In response to this instruction, the bright line signal generation circuit 15
From the read control circuit 22 to which the reference signal is supplied.
Therefore, only the detection signal in the area surrounded by the bright line L is stored in the memory
21 and is directly supplied to the high-pass filter 8.
After the stream is removed, it is supplied to the peak detection circuit 13.
You. Then, the control circuit 14 controls the driving power supply 18
The objective lens 3 is set to the excitation intensity at the peak. Ma
The control circuit 14 obtains information on the rectangular bright line L, and
The driving power supply 19 is controlled based on the
The scanning of the electron beam is performed only on the sampled area. Follow
Focusing is performed on the information of the sample area surrounded by the rectangular bright line L.
Focus on the sample's point of interest
Will fit.
【0014】この実施例では、各対物レンズの励磁強度
ごとに1回の電子ビームの走査を行うことによって得ら
れた検出信号(メモリ21内のデータ)に基づき、所望
の領域の焦点合わせのための信号処理を何度でも行うこ
とができるので、試料への電子ビームの照射回数を減少
させることができ、試料のチャージアップの影響を避け
ることができる。なお、この実施例の変形として、特定
領域外をマスクして変化させないデータとして全体処理
を行うこともできる。[0014] In an embodiment of this, based on the detection signal obtained by performing a single scan of the electron beam for each excitation intensity of each objective lens (data in memory 21), the desired
Since the signal processing for focusing on the region can be performed as many times as possible, the number of times of irradiation of the sample with the electron beam can be reduced, and the influence of charge-up of the sample can be avoided. As a modification of this embodiment, the whole process can be performed as data that is not changed by masking the outside of the specific area.
【0015】以上本発明の一実施例を詳述したが、本発
明はこの実施例に限定されない。例えば、2次電子を検
出したが、反射電子を検出してもよい。また、注目点を
陰極線管上で輝線で囲むようにして選択するようにした
が、注目点の輝度を上昇させるようにしても良い。さら
に、矩形状の輝線などを複数陰極線管上に表示できるよ
うにし、注目点の選択を単一ではなく複数できるように
構成しても良い。その場合、複数の注目点に優先順位を
付けて焦点合わせを行ったり、また、注目点の全体の総
合で焦点合わせを行うように構成しても良い。このよう
に、注目領域の比較や演算により、目的に応じた自動焦
点合わせが可能となる。Although the embodiment of the present invention has been described in detail, the present invention is not limited to this embodiment. For example, although secondary electrons are detected, reflected electrons may be detected. In addition, the point of interest is selected so as to be surrounded by a bright line on the cathode ray tube, but the luminance of the point of interest may be increased. Further, a configuration may be adopted in which a plurality of rectangular bright lines or the like can be displayed on a plurality of cathode ray tubes, and a plurality of points of interest can be selected instead of a single point. In this case, a plurality of attention points may be prioritized for focusing, or the focus of the entire attention points may be adjusted as a whole. As described above, by comparing and calculating the attention areas, automatic focusing according to the purpose can be performed.
【0016】上述した実施例においては、ハイパスフィ
ルターを通過した検出信号のピーク値を検出し、この検
出値を合焦点の程度を表す評価信号とするようにした
が、ハイパスフィルターを通過した検出信号を絶対値回
路に供給し、絶対値回路の出力信号を積分してその積分
値を表す信号を評価信号にするようにしても良いし、検
出信号を微分し、その微分信号の絶対値を積分して評価
信号としたり、検出信号を周波数分析して高周波成分の
割合を求め、この割合を表す信号を評価信号とするよう
にしても良い。In the above-described embodiment, the peak value of the detection signal that has passed through the high-pass filter is detected, and this detection value is used as the evaluation signal indicating the degree of focus. May be supplied to an absolute value circuit, an output signal of the absolute value circuit may be integrated, and a signal representing the integrated value may be used as an evaluation signal. Alternatively, the detection signal is differentiated, and the absolute value of the differentiated signal is integrated. Alternatively, the frequency of the detection signal may be analyzed to determine the ratio of the high frequency component, and a signal representing this ratio may be used as the evaluation signal.
【0017】また、上述した実施例においては、種々の
集束状態を生じさせるため対物レンズの励磁電流をステ
ップ状に変化させるようにしたが、対物レンズの近傍に
補助対物レンズを配置、この補助対物レンズの励磁電流
をステップ状に変化させるようにしても良い。In the above-described embodiment, the exciting current of the objective lens is changed stepwise in order to cause various focusing states. However, an auxiliary objective lens is arranged near the objective lens, and this auxiliary objective lens is arranged. The exciting current of the lens may be changed stepwise.
【0018】[0018]
【発明の効果】以上説明したように、本発明に基づく走
査電子顕微鏡における焦点合わせ方法は、各集束状態で
試料上の任意の領域の走査像に関する検出器の検出信号
をメモリに記憶させておき、この走査像中の所望領域を
選択し、その選択領域での検出信号をメモリから読み出
し、この読み出した検出信号に基づいて焦点合わせを行
うようにしたので、単に、短時間に試料の注目部分に正
確に焦点合わせを行うことができるだけでなく、各対物
レンズの励磁強度ごとに1回の電子ビームの走査を行う
ことによって得られた検出信号に基づき、焦点合わせの
ための信号処理を行うことができるので、試料への電子
ビームの照射回数を減少させることができ、試料のチャ
ージアップの影響を避けることができる。 As described above, the focusing method in the scanning electron microscope according to the present invention is performed in each focusing state.
Detection signal of detector for scanning image of arbitrary area on sample
Is stored in a memory, and a desired area in this scanned image is
Select and read the detection signal in the selected area from memory
And, since to perform focusing based on the detection signal thus read out, simply can not only perform accurate focusing on the target portion of a short time the sample, the objective
Performs one electron beam scan for each lens excitation intensity
Of the focusing based on the detection signal
Signal processing for the
The number of beam irradiations can be reduced,
The effect of page up can be avoided.
【図1】本発明の方法を実施するための走査電子顕微鏡
の一例を示す図である。FIG. 1 is a diagram showing an example of a scanning electron microscope for performing a method of the present invention.
【図2】対物レンズの励磁強度と積分値との関係を示す
図である。FIG. 2 is a diagram illustrating a relationship between an excitation intensity of an objective lens and an integral value.
【図3】陰極線管上の像と輝線Lとを示す図である。FIG. 3 is a diagram showing an image on a cathode ray tube and a bright line L.
1 電子銃 2 集束レンズ 3 対物レンズ 4 試料 5 偏向コイル 6 検出器 7 増幅器 8 ハイパスフィルタ 9 加算器 13 ピーク検出回路 14 制御回路 15 輝線信号発生回路 16 陰極線管 17 操作盤 18,19 駆動電源21 メモリ 22 読み出し制御回路 DESCRIPTION OF SYMBOLS 1 Electron gun 2 Focusing lens 3 Objective lens 4 Sample 5 Deflection coil 6 Detector 7 Amplifier 8 High pass filter 9 Adder 13 Peak detection circuit 14 Control circuit 15 Bright line signal generation circuit 16 Cathode ray tube 17 Operation panel 18, 19 Drive power supply 21 Memory 22 Read control circuit
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭54−48477(JP,A) 特開 平1−264152(JP,A) 実開 昭59−165658(JP,U) (58)調査した分野(Int.Cl.7,DB名) H01J 37/21 H01J 37/22 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-54-48477 (JP, A) JP-A-1-264152 (JP, A) JP-A-59-165658 (JP, U) (58) Survey Field (Int.Cl. 7 , DB name) H01J 37/21 H01J 37/22
Claims (1)
物レンズと、試料上の電子ビームの照射位置を走査する
ための走査手段と、試料への電子ビームの照射によって
得られた信号を検出する検出器と、対物レンズの励磁強
度を変えることにより試料上の電子ビームの集束状態を
ステップ状に変化させる手段とを備えた走査電子顕微鏡
において、各集束状態のときに試料を電子ビームで走査
し、この走査により得られた検出器の検出信号を処理し
て合焦点の程度を表わす評価値信号を得、各電子ビーム
の集束状態ごとの評価値に応じて電子ビームの焦点合わ
せを行うようにした焦点合わせ方法において、各集束状態で 試料上の任意の領域の走査像に関する検出
器の検出信号をメモリに記憶させておき、この走査像中
の所望領域を選択し、その選択領域での検出信号を前記
メモリから読み出し、この読み出した検出信号に基づい
て焦点合わせを行うようにした走査電子顕微鏡における
焦点合わせ方法。An objective lens for focusing an electron beam on a sample, a scanning unit for scanning an irradiation position of the electron beam on the sample, and detecting a signal obtained by irradiating the sample with the electron beam. a detector for, in a scanning electron microscope equipped with a means for changing the focusing state of the electron beam on the sample stepwise by changing the excitation strength of the objective lens, a specimen with an electron beam at each converging state It scans, processes the detection signal of the detector obtained by this scanning, obtains an evaluation value signal indicating the degree of the focal point, and focuses the electron beam according to the evaluation value for each focusing state of each electron beam. In the focusing method, detection of a scanning image of an arbitrary area on the sample in each focusing state is performed.
The detection signal of the detector is stored in a memory, a desired area in this scan image is selected, and the detection signal in the selected area is described above.
A focusing method in a scanning electron microscope configured to read from a memory and perform focusing based on the read detection signal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04071087A JP3114335B2 (en) | 1992-03-27 | 1992-03-27 | Focusing method in scanning electron microscope |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04071087A JP3114335B2 (en) | 1992-03-27 | 1992-03-27 | Focusing method in scanning electron microscope |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05275042A JPH05275042A (en) | 1993-10-22 |
JP3114335B2 true JP3114335B2 (en) | 2000-12-04 |
Family
ID=13450402
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JP04071087A Expired - Lifetime JP3114335B2 (en) | 1992-03-27 | 1992-03-27 | Focusing method in scanning electron microscope |
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JP (1) | JP3114335B2 (en) |
Families Citing this family (1)
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JP4871350B2 (en) * | 1999-07-09 | 2012-02-08 | 株式会社日立製作所 | Pattern dimension measuring method and pattern dimension measuring apparatus |
-
1992
- 1992-03-27 JP JP04071087A patent/JP3114335B2/en not_active Expired - Lifetime
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JPH05275042A (en) | 1993-10-22 |
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