JP3180209B2 - Developing device and developing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0010]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spray type developing apparatus and a developing method for applying a developing solution onto a substrate to be processed by using a spinner mechanism and a nozzle.

[0020]

2. Description of the Related Art In a photolithography process for manufacturing a semiconductor device, a photoresist is applied to a surface of a semiconductor wafer (resist coating process), a mask pattern is printed on the resist (exposure process), and a photosensitive portion of the resist or non-exposed portion is exposed. The photosensitive section is selectively dissolved in a developer (development step) to form a resist pattern on the wafer surface. Conventionally, in this type of developing process, a spray-type developing device that sprays and supplies a developing solution from a nozzle onto a wafer surface while rotating a semiconductor wafer by a spinner mechanism and fills the surface with surface tension has been used. .

In general, in a spray-type developing device, the nozzle is made to stand by at a predetermined nozzle standby portion when the developer is not filled, and when not used for a long time, the developing solution at the tip of the nozzle may be deteriorated. Therefore, a predetermined amount of the developing solution is discharged and discarded at the nozzle standby portion or at a specially provided dummy dispensing portion. Also, in order to reduce the impact on the semiconductor wafer when the developing solution from the nozzle hits the semiconductor wafer, the nozzle outlet may be configured with a number of fine holes, and the developing solution may be discharged so as to seep out from those fine holes. Is being done.

[0040]

In the conventional spray type developing device, after the dummy dispensing is performed in advance in the nozzle standby section or the dummy dispensing section as described above,
The nozzle was moved to above the semiconductor wafer, and the developing solution was discharged at a predetermined developing solution discharging position. However, immediately after the start of the discharge, the developing solution is vigorously discharged from the nozzle, so that there is a problem that the developer hits the wafer surface with a strong impact.

Also, in the conventional apparatus, the developer from the nozzle hits the surface of the semiconductor wafer almost vertically regardless of whether or not the discharge port of the nozzle has a large number of pores as described above. I have. However, since the semiconductor wafer is rotating, the semiconductor wafer receives a considerable impact when the developer is vertically applied thereto. If the impact of the developing solution is strong, the wafer surface may be damaged, or bubbles may be generated in the developing solution to cause uneven development.

In addition, in the conventional apparatus, the developing solution supplied from the nozzle to the front surface of the semiconductor wafer flows from the peripheral edge of the wafer to the back surface of the wafer, and contaminates not only the wafer but also the spin chuck, the driving motor and the like. There was a defect.

The present invention has been made in view of the above problems, and has been made to reduce the impact of a developing solution supplied from a nozzle to the surface of a substrate to be processed, thereby protecting the substrate to be processed and improving the quality of the developing process. It is an object of the present invention to provide a developing device which can be measured.

The present invention is also directed to a developing method in which a developing solution supplied from the nozzle to the front surface of the substrate to be processed is effectively prevented from flowing to the back surface of the substrate, thereby preventing contamination and improving the quality of the developing process. It is intended to provide a device.

It is another object of the present invention to provide a developing method in which a developing solution is safely and uniformly applied on a substrate to be processed so that development defects are reduced as much as possible.

[0100]

In order to achieve the above-mentioned object, a developing apparatus according to the present invention holds a substrate to be processed on it.
A spin chuck that rotates while being held, and the spin chuck
Nozzle for supplying a developer to the substrate to be processed
And an upper surface opened around the spin chuck.
Cup and the cup to make the nozzle stand by.
A nozzle standby unit installed outside the pump, and the nozzle standby unit
And a second position set above the spin chuck
Nozzle transfer means for moving the nozzle between
And the nozzle is moved forward by the nozzle transfer means.
The nozzle is provided above the peripheral portion of the substrate from the nozzle standby portion.
Is moved to the first position that has been set, and at the first position
The discharge of the developing solution from the stationary nozzle is
So that it can be received directly on the cup without hanging on the processing board
And then, toward the substrate to be processed,
While continuing the discharge of the developer, the nozzle is moved to the second position.
It was configured to move to the position.

In the developing device of the present invention, the spin chuck is
A nozzle standby unit is installed outside the surrounding cup, and development processing
Is carried out, the developer is supplied by the nozzle transfer means.
The feeding nozzle passes from above the nozzle stand to above the cup side wall.
To the second position set above the spin chuck
Moving. During this movement, the nozzle is on the spin chuck
At a first position set above the peripheral portion of the substrate to be processed
Once stopped and stopped, the developer
Start discharging. Here, at the start of discharge or immediately after the start
The developer that vigorously comes out of the nozzle may hit the substrate to be processed.
It can be received directly in the cup. Above in the first position
After a predetermined time from the start of the discharge of the developer,
Is applied to the substrate to be processed, which rotates on the spin chuck.
It moves to the second position while discharging toward. like this
Then, move the nozzle from the nozzle standby section
When moving to the second position, the first position (setting
At the position) to stop the nozzle and discharge the developer
Start, and from the nozzle at or immediately after the start of discharge
The exposed developing solution was not applied to the substrate.
This reduces the impact of the developing solution on the substrate to be processed,
The processing substrate can be prevented from being damaged.

In the developing device of the present invention, the substrate to be processed is
The impact from the developer is further reduced and the developer
In order to prevent the generation of air bubbles in the substrate,
The developer from the nozzle in the direction not against
The structure may be such that it hits the surface of the substrate to be processed.

In the developing device of the present invention, the nozzle
Of the developing solution supplied to the front surface of the substrate to be processed
Effectively prevents sneaking around to prevent contamination and the development process.
In order to improve the quality,
From inside to outside of the substrate along the periphery of the back side of the substrate to be processed
It is good also as a structure provided with the means which flows an air current.

Further , the development processing method of the present invention provides
Place the plate on the spin chuck and rotate the nozzle
Is moved upward from the side of the substrate to be processed, and the
The developer is supplied to the surface of the substrate through the
In the developing method described above, the nozzle is configured to
While moving above the processing substrate, the substrate to be processed
Discharge of the developer from the nozzle at the first position
Starting, and rotating the substrate to be processed at a first rotation speed.
At the same time, the developing solution is sprayed from the nozzle.
While discharging the nozzle toward the processing substrate, the nozzle is moved to the first position.
From the position to the second position above the substrate to be processed
And rotating the substrate to be processed at the first rotational speed.
At the second rotation speed, which is lower than
The developing solution is supplied from the nozzle to the substrate
And discharging the substrate to be processed to the second
Rotating at a third rotation speed lower than the rotation speed of
At the time, the developing solution is moved forward from the nozzle at the second position.
Discharging the liquid toward the substrate to be processed, and
did.

In the developing method of the present invention, the developing solution
Nozzle does not hit the substrate to be processed on the spin chuck
The discharge of the developer is started at the first position, and the relatively high speed first liquid is discharged.
Discharges the developing solution onto the substrate rotating at the rotation speed
To a second position while scanning at a predetermined moving speed
This allows the entire surface of the substrate to be processed
Can be wetted. Then, when the nozzle is in the second position
It is suitable for a substrate to be processed which is rotated at a relatively medium second speed.
And discharge the developing solution on the substrate to be processed.
The liquid layer of the liquid can be thickened from the center. Then
The nozzle rotates at a relatively low third rotational speed in the second position.
By discharging the developer toward the substrate to be processed
Of the developing solution on the substrate to be processed to a desired thickness almost uniformly.
Can be served.

In the developing method of the present invention,
To effectively prevent developer pullback on the plate.
The rotation speed of the substrate to be processed is set to the first rotation speed.
From the first rotational speed at a predetermined acceleration corresponding to
A method having a step of switching to the second rotation speed.
No.

[0170]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the accompanying drawings.

First, a coating and developing system including a developing device according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3 are views showing the overall configuration of the coating and developing treatment system. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view.

In this processing system, a plurality of semiconductor wafers W, for example,
A cassette station 10 for loading and unloading semiconductor wafers W from the outside into and out of the system in units of five wafers, and loading and unloading semiconductor wafers W into and from the wafer cassette CR; Wafer W
Between a processing station 12 in which various single-wafer processing units for performing predetermined processing are arranged at predetermined positions in a multistage manner, and an exposure apparatus (not shown) provided adjacent to the processing station 12. It has a configuration in which an interface unit 14 for delivering and receiving W is integrally connected.

In the cassette station 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, up to four wafer cassettes CR are provided at the positions of the projections 20a on the cassette mounting table 20 with their respective wafer entrances facing the processing station 12 side.
A wafer carrier 22 which is placed in a row in the direction and is movable in the cassette arrangement direction (X direction) and in the wafer arrangement direction (Z direction) of wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. It is supposed to. Further, the wafer carrier 22 is configured to be rotatable in the θ direction, and as will be described later, an alignment unit (ALIM) and an extension unit (ALIM) belonging to the multistage unit of the third set G3 on the processing station 12 side. EXT).

In the processing station 12, as shown in FIG. 1, a vertical transfer type main wafer transfer mechanism 24 is provided at the center, and all the processing units are multi-staged around one or more sets around the center. Are located in In this example, 5
The multi-stage arrangement of the sets G1, G2, G3, G4, G5 is such that the multi-stage units of the first and second sets G1, G2 are juxtaposed on the front side of the system (front side in FIG. 1). The multistage units are arranged adjacent to the cassette station 10, the multistage units of the fourth set G4 are arranged adjacent to the interface unit 14, and the multistage units of the fifth set G5 are arranged on the back side.

As shown in FIG. 2, in the first set G1, a resist coating unit (COT) according to the present embodiment is a spinner-type processing unit that places a semiconductor wafer W on a spin chuck in a cup CP and performs a predetermined process. The developing unit (DEV) is stacked in two stages from the bottom.
Also in the second set G2, the resist coating unit (COT) and the developing unit (DEV) according to the present embodiment are stacked in two stages from the bottom. Resist coating unit (CO
In T), the drainage of the resist solution is troublesome both mechanically and in terms of maintenance. Therefore, it is preferable to dispose the resist solution in the lower stage. However, they can be arranged in the upper stage as needed.

As shown in FIG. 3, in the third set G3, an oven-type processing unit, such as a cooling unit (COL) or an adhesion unit (AD), for performing a predetermined process by mounting the semiconductor wafer W on the mounting table SP. ), Alignment unit (ALIM), extension unit (EXT), pre-baking unit (PREBAK)
E) and post-baking unit (POBAKE)
Are stacked in eight steps from the bottom. Also in the fourth set G4, oven-type processing units such as a cooling unit (COL), an extension cooling unit (EXTCOL), and an extension unit (E
XT), a cooling unit (COL), a pre-baking unit (PREBAKE), and a post-baking unit (POBAKE) are stacked in, for example, eight stages from the bottom.

As described above, the cooling units (COL) and (EXTCOL) having a low processing temperature are arranged in the lower stage, and the baking units (PREBAKE) having a high processing temperature and
By arranging the post-baking unit (POBAKE) and the adhesion unit (AD) at the top,
Thermal interference between units can be reduced. However, a random multi-stage arrangement is also possible.

The interface section 14 has the same dimensions as the processing station 12 in the depth direction, but is made smaller in the width direction. Interface section 14
A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages at the front, a peripheral exposure device 28 is arranged at the back, and a wafer carrier 26 is provided at the center. I have. This wafer carrier 26 is
It moves in the X and Z directions to access both cassettes CR and BR and the peripheral exposure device 28. Further, the wafer carrier 26 is configured to be rotatable in the .theta. Direction, and to the extension unit (EXT) belonging to the multistage unit of the fourth set G4 on the processing station 12 side, and to the wafer transfer on the adjacent exposure apparatus side. A table (not shown) can be accessed.

Although this processing system is installed in a clean room, the cleanliness of each part is further increased in the system by an efficient vertical laminar flow system. 4 and 5
2 shows the flow of clean air in the system.

4 and 5, air supply chambers 12a, 14a, and 16a are provided above the cassette station 10, the processing station 12, and the interface unit 14.
Are provided, and each air supply chamber 12a, 14a, 16
Filters with a dustproof function, for example, ULPA filters 30, 32, and 34 are attached to the lower surface of a.

As shown in FIG. 5, an air conditioner 36 is provided outside or behind the processing system, and air flows from the air conditioner 36 through a pipe 38 to each of the air supply chambers 12a, 12a.
Clean air is introduced into the air supply chambers 14, 16 a and supplied from the ULPA filters 30, 32, 34 in the respective air supply chambers to the respective parts 10, 12, 14 in a downflow manner. The down-flow air passes through a large number of ventilation holes 40 provided at appropriate locations below the system and is collected at an exhaust port 42 at the bottom, and is collected from the exhaust port 42 through a pipe 44 to the air conditioner 36. It is circulating.
In addition, it is also possible to configure so that the gas is discharged to the outside from the exhaust port 42 without being circulated.

As shown in FIG. 4, in the cassette station 10, the space above the cassette mounting table 20 and the moving space of the wafer transfer arm 22 are separated from each other by a hanging wall-type partition plate 11.
, And the downflow air flows separately in both spaces.

As shown in FIGS. 4 and 5, in the processing station 12, the resist coating units (COT) and (COT) disposed at the lower stage in the multistage units of the first and second sets G1 and G2. A ULPA filter 46 is provided on the ceiling of the air conditioner.
The air is sent to the filter 46 through a pipe 48 branched from the pipe 8. A temperature / humidity regulator (not shown) is provided in the middle of the pipe 48 so that clean air of a predetermined temperature and humidity suitable for the resist coating step is supplied to the resist coating units (COT) and (COT). It has become. A temperature / humidity sensor 50 is provided in the vicinity of the outlet side of the filter 46, and the sensor output is given to the control unit of the temperature / humidity regulator, and the temperature and humidity of the clean air are set to the set values by a feedback method. It is controlled.

In FIG. 4, an opening DR through which a wafer and a transfer arm enter and exit is provided on a side wall facing the main wafer transfer mechanism 24 of each of the spinner type processing units (COT) and (DEV). A shutter (not shown) is attached to each opening DR in order to prevent particles or contamination from each unit from entering the main wafer transfer mechanism 24 side.

In the coating / developing processing system having the above-described structure, each processing is performed by transporting the semiconductor wafer W in order as follows, for example.

First, unprocessed semiconductor wafers W are unloaded one by one from the wafer cassette CR by the wafer transfer body 22 and loaded into the alignment unit (ALIM). The semiconductor wafer W positioned here is transferred to the main wafer transfer mechanism 2.
4 and carried into an adhesion unit (AD) for adhesion processing. After the completion of the adhesion process, the semiconductor wafer W is transferred to the main wafer transfer mechanism 24.
And carried into a cooling unit (COL), where it is cooled.

Hereinafter, the semiconductor wafer W is coated with a resist coating unit (COT) and a pre-baking unit (PREBA).
KE), extension cooling unit (EX
TCOL), and conveyed to the exposure apparatus via the interface unit 14. Then, the extension unit (EXT), the development unit (DEV), the post-baking unit (POBAKE) of the fourth set G4, and the extension of the third set G3 The semiconductor wafer W is transferred to a tension unit (EXT) or the like to perform each processing, and the processed semiconductor wafer W is stored in the wafer cassette CR.

Next, the structure of the developing unit (DEV) in this embodiment will be described with reference to FIGS. 6 to 8 and FIGS. FIG. 6 is a schematic partial cross-sectional side view showing a configuration of a main part of the developing unit (DEV). FIGS. 7 and 8 show first and second developer supply nozzles of the developing unit (DEV) during scanning. It is a schematic plan view which shows a position each. FIG. 13 is a cross-sectional view showing the internal configuration of the developer supply nozzle according to one embodiment. FIG. 14 and FIG.
FIG. 9 is a cross-sectional view illustrating an internal configuration of a developer supply nozzle according to a modification and a perspective view schematically illustrating a configuration of a main part.

In this developing unit (DEV), a spin chuck 60 is disposed at the center inside the annular cup CP. The semiconductor wafer W to be subjected to the development processing is transferred into the unit by a transfer arm (not shown) of the main wafer transfer mechanism 24, and is placed on the spin chuck 60. The spin chuck 60 is configured to rotate by the rotational driving force of the drive motor 62 while holding the semiconductor wafer W by vacuum suction. Cup C
The liquid dropped into P or the gas sucked in is sent from a drain port (not shown) at the bottom of the cup CP to a trap tank (not shown) through a drain pipe (not shown). ing.

At the upper end of the inner wall surface 64 of the cup CP, a ring member 66 is attached so as to form an appropriate gap G with the back surface of the periphery of the semiconductor wafer W on the spin chuck 60. Inside the ring member 66 and below the spin chuck 60, a bottomed cylindrical buffer chamber 68 is provided. One or more gas inlets 68a are formed in the bottom surface of the buffer chamber 68, and a gas such as air or N2 gas from a gas supply source (not shown) is introduced into the buffer chamber 68 from the gas inlet 68a. The gas introduced into the room passes through the gap G between the ring member 66 and the semiconductor wafer W and exits the room. In this way,
An airflow flows from the inside to the outside of the wafer W along the back surface of the peripheral portion of the semiconductor wafer W on the spin chuck 60.

The developing solution supply nozzle 70 in this developing unit (DEV) is supported by a horizontal nozzle arm 76 via a vertical support rod 72 and a joint member 74, and is connected to a driving mechanism ( (Not shown) so as to linearly move between a nozzle standby portion 78 (FIG. 7) disposed outside or on the side of the cup CP and a predetermined position set above the spin chuck 60. Has become. In the nozzle standby unit 78,
In order to discard the developing solution that has dried and deteriorated at the tip of the developing solution supply nozzle 70, dummy dispensing is performed periodically or as needed. In the present embodiment,
Direct support rod 72, joint member 74, horizontal nozzle arm
76 and the driving mechanism constitute a nozzle transfer means.
You.

In FIG. 13, the developing solution supply nozzle 70 of this embodiment has a large number (n) of discharge ports 80 (1), 80 (2),. n) are integrally connected to a discharge section 82 provided in a line and a temperature control section 84 for maintaining the temperature of the developer constant. The discharge unit 82 and the temperature control unit 84 may be made of, for example, SUS or aluminum.

[0400] A pair of cylindrical pipe connection portions 86 and 88 project from both ends on the back side of the temperature control portion 84 when viewed from the discharge portion 82, and the pipe connection portions 86 and 88 are connected to the temperature control of the outer pipe. Tube 90
b, 92b and a pair of double pipes 90, 92 composed of inner developer supply pipes 90a, 92a, respectively.
Outer temperature control pipes 90b and 92b are relatively large diameter temperature control water ports 86a and 88 near the openings of the pipe connection portions 86 and 88, respectively.
a, and the inner developer supply pipes 90a, 92a
Are attached to the developer ports 86b and 88b having a relatively small diameter inside the pipe connection portions 86 and 88.

[0410] Inside the temperature control section 84, the discharge ports 80 (1),
80 (n) are formed in parallel with the arrangement direction of 80 (n). This temperature control water passage 94
It communicates with the temperature control ports 86a, 88a through passages 96, 98 formed around the developer supply pipe 90 and the developer ports 86b, 88b. The temperature-regulated water coming from the temperature-regulated water supply section (not shown) through one temperature-regulated pipe 90b and introduced into the temperature-regulated water port 86a on the inlet side is supplied to the temperature-regulated water passages 96, 94, 98. Temperature control water port 88a on the exit side through
And is returned to the temperature-regulated water supply unit through the other temperature-regulated pipe 92b.

In the discharge section 80, the developer inlets 86b, 8 are provided through the developer passages 100, 102 in the temperature control section 84.
8b, an L-shaped developer passage 104 communicating with the discharge port 80b is formed in the longitudinal passage of the developer passage 104.
(i) are connected at regular intervals. The developer that has passed through the developer supply pipes 90a and 92a from the developer supply unit (not shown) and has been introduced into the developer inlets 86b and 88b flows through the developer passages 100, 102, and 104, respectively. Each outlet 8
0 (i) is discharged.

The developing solution supplied from the developing solution supply unit to the nozzle 70 is maintained at a constant temperature in the developing solution supply tube 90a and the discharge unit 82 by the temperature control water of the temperature control tube 90b and the temperature control unit 84, respectively. Therefore, the developer discharged from each discharge port 80 (i) is in a good liquid state. In addition,
Each discharge port 80 (i) of the developer supply nozzle 70 faces obliquely downward, and the developer is discharged in the same direction.

In a modification shown in FIGS. 14 and 15, each discharge port 80 (i) is provided in a discharge section 82 of a developer supply nozzle 70.
A rectifying plate 110 for making the flow rate of the developing solution uniform is provided. In this example, the recess 11
2 is formed, and a box-like member 114 having an open top surface is formed in the recess 112 so that the bottom plate (rectifying plate) 110 is formed in the recess 11.
It is mounted with some floating from the bottom of 2.

The bottom plate (rectifying plate) 110 of the box-shaped member 114
, The lower discharge ports 80 (1), 80 (2),.
.. 116 (n) having appropriate diameters are formed at positions (locations) opposed to (n). The buffer chamber 118 is formed by the box-shaped member 114 and the lower surface 85 of the temperature control section 84, and the outlets of the developer passages 100 and 102 of the temperature control section 84 face both ends of the buffer chamber 118.

The developing solution flowing through the developing solution passages 100 and 102 is once received by the buffer chamber 118, and then the holes 116 (1), 116 (2),.
(n), and is sent to the discharge ports 80 (1), 80 (2),. As a result, the developer is discharged from the discharge ports 80 (1), 80 (2),... 80 (n) at a substantially uniform flow rate.

The mounting structure of the current plate 110 or the arrangement position and number of the holes 116 can be arbitrarily selected or modified.

As shown in FIGS. 7 and 8, the developer supply nozzle 70 has discharge ports 80 (1), 80 (2),... 80 (n).
Are not horizontal to the horizontal nozzle arm 76 but are inclined slightly obliquely (preferably 10 to 24).
゜). When the development process is performed,
The horizontal nozzle arm 76 moves in the horizontal direction (the direction of arrow F) perpendicular to the axial direction, and carries the developer nozzle 70 from the nozzle standby section 78 to a position above the semiconductor wafer W.

Next, the steps of the developing process in the developing unit (DEV) of this embodiment will be described with reference to FIGS.

[0500] development in the developing unit (DEV) is basically five steps as shown in FIG. 9 ,,
, And are included.

First, in the first step, the horizontal nozzle arm 76 is driven in the direction of arrow F to move the developer nozzle 70 from the position of the nozzle standby portion 78 to the first position above the peripheral edge of the semiconductor wafer W. (The position indicated by a solid line in FIG. 6). At the first position P1, the discharge ports 80 (1), 80 (2),.
(n) is directed to the upper opening of the cup CP. On the other hand, the drive motor 62 is started to rotationally drive the spin chuck 60, and the rotation speed of the semiconductor wafer W as the object to be processed is increased to the first
, For example, to 1000 rpm.

Next, in the second step, as shown in FIGS. 6 and 7, the developer nozzle 70 is located at the first position P1.
Then, the discharge of the developer is started. The discharge flow rate may be set to, for example, 0.8 liter / second. In this way, the developer discharged vigorously from the developer supply nozzle 70 does not hit the semiconductor wafer W, but falls directly into the cup CP and is collected. The discharge of the developer outside the wafer at the first position P1 is performed for a predetermined time, for example, 0.3 seconds. During the second step, the rotation speed of the semiconductor wafer W is maintained at the first speed (1000 rpm).

Next, in the third step, while the developer is discharged from the developer supply nozzle 70 at a predetermined flow rate, for example, 0.8 liter / second, an appropriate scan speed, for example, 60
The horizontal nozzle arm 76 moves in the direction of arrow F at 100 mm / sec, and takes a predetermined time, for example, 1.0 second,
The developer nozzle 70 is moved from the first position P1 to the semiconductor wafer W.
Is moved to a second position P2 (the position shown in FIG. 8) which is set above the center of.

In the movement from the first position P 1 to the second position P 2, the developer supply nozzle 70
0 (1), 80 (2),... 80 (n) The semiconductor wafer W is scanned while discharging the developer with a more stable discharge flow.

On the other hand, also in the third step, the rotation speed of the semiconductor wafer W is maintained at the first speed (1000 rpm). Thus, in the third step, the developer supply nozzle 70
The developer discharged from the semiconductor wafer W is rotated at a high speed.
All over the surface of the wafer, and the entire surface of the wafer is wetted with the developer having a small thickness (pre-wet).

As can be understood from FIG. 7, when the developer from the developer supply nozzle 70 reaches the semiconductor wafer W immediately after the start of the scan, the discharge ports 80 (1) at both ends of the developer supply nozzle 70 , 80 (n) should strike (ride on) the peripheral edge of the semiconductor wafer W almost simultaneously.

Next, in the fourth step, the semiconductor wafer W is rotated at a medium rotation speed, for example, 100 rpm, which is substantially lower than the first rotation speed (1000 rpm). At the position P2, a predetermined flow rate from the developer supply nozzle 70, for example, 0.8 liter /
The developer is discharged in seconds. This process is performed for a predetermined time, for example, 1.5 seconds, whereby the liquid layer of the developing solution on the semiconductor wafer W becomes thicker from the center of the wafer.

What is important here is the magnitude of the acceleration when decelerating from the high-speed first rotation speed to the medium-speed second rotation speed. If the acceleration is too large, the centripetal force applied to the developer on the semiconductor wafer W becomes excessive, and a phenomenon that the developer is drawn to the center of the wafer, so-called pullback, may occur. When pullback occurs, bubbles are entrained in the liquid layer at the center of the wafer, and development defects are likely to occur. On the other hand, if the acceleration of the deceleration is too small,
There is a problem that the deceleration time is prolonged, the developing solution discharge time is correspondingly increased, and the total developing solution discharge amount is increased.

The inventor of the present invention has conducted extensive studies on this problem and has conducted extensive studies. As a result, if the value of the acceleration of the deceleration is selected to be a value corresponding to the high-speed first rotation speed, for example, the first rotation speed becomes In the case of 1000 rpm, it was found that if the speed was selected around 1000 rpm / sec, pullback or development defects could be effectively prevented with the shortest deceleration time.

Next, in a fifth step, the rotation speed of the semiconductor wafer W is rotated at a low third rotation speed lower than the second rotation speed (100 rpm), for example, 30 rpm, and at the same time, the semiconductor wafer W is moved to the second position P2. The developer is discharged from the developer supply nozzle 70 at a predetermined flow rate, for example, 0.8 liter / second. This process is performed for a predetermined time, for example, 2.0 seconds. In this way, the developing solution discharged from the developing solution supply nozzle 70 uniformly falls on the surface of the semiconductor wafer W rotating at a low speed for a predetermined time, and the entire surface of the wafer is almost uniformly filled with a desired thickness.

Since the deceleration range from the second rotation speed (100 rpm) to the third rotation speed (30 rpm) is small, the acceleration of the deceleration may be arbitrarily selected, and may be set to, for example, 1000 rpm / sec. Good.

A series of steps as described above allows the developer to be safely and uniformly deposited on the semiconductor wafer W. Particularly, in the present embodiment, the semiconductor wafer W is rotated at a high speed and the developing solution is supplied from the third step (pre-wet step) to the fourth step of rotating the semiconductor wafer W at a medium speed and the developing liquid is supplied. In order to shift to the fifth step (liquid filling step) of supplying the developer by rotating the wafer W at a low speed, the developer on the semiconductor wafer W is kept stable,
Pullback can be effectively prevented. Moreover,
When switching from the high-speed rotation in the third step to the medium-speed rotation in the fourth step, the speed is reduced at an acceleration corresponding to the high-speed rotation before the switching, so that pullback can be more effectively prevented. Therefore, development defects can be reduced as much as possible.

After the developing solution is loaded on the semiconductor wafer W as described above, this state is maintained for a predetermined time to complete the developing process. Developer supply nozzle 70
Is transported by the horizontal nozzle arm 76 in the direction opposite to the arrow F after the fifth step, and returned to the nozzle standby section 78.

In the third to fifth steps, it is desirable that the developer supply nozzle 70 is separated from the semiconductor wafer W by an appropriate distance h (for example, 8 mm) as shown in FIG. If the distance h is too small (for example, 5 mm
In the following, there is a possibility that the developer on the semiconductor wafer W may adhere to the lower end of the developer supply nozzle 70. If the interval h is too large (for example, 14 mm or more), the impact of the developer on the wafer W increases, Development defects are likely to occur.

Each discharge port 8 of the developer supply nozzle 70
The direction (nozzle angle) θ of 0 (i) is desirably selected to an appropriate angle, for example, 45 °. If the nozzle angle θ is too large, it is difficult to supply the developing solution into the cup CP in the second step, and it is difficult to supply a later-described developing solution to be described later. Conversely, if the nozzle angle θ is too small, as shown in FIG. 11, there is a possibility that the developer 70 drips at the discharge port 80 (i) and the nozzle 70 is contaminated.

In the fourth and fifth steps, as shown in FIG. 12 (A), the developer discharged from one discharge port of the developer supply nozzle 70, for example, 80 (2) is supplied to the semiconductor wafer. It is desirable to set the second position P2 so as to be supplied so as to almost completely surround the center point CW of W in order to prevent uneven development. As shown in FIG. 12B, the developer discharged from each of the two discharge ports, for example, 80 (1) and 80 (2) is applied to the center point CW of the semiconductor wafer W.
If the ink is supplied in such a manner as to collide in the vicinity, uneven development is likely to occur there.

The scanning of the developer supply nozzle 70 in this embodiment has several features. One is the discharge of the developing solution at a position (first position P1) where the developing solution supply nozzle 70 does not touch the semiconductor wafer W in the second step of moving the developing solution supply nozzle 70 upward from the side of the semiconductor wafer W as described above. But there are other important features.

[0680] In the third to fifth steps, the developing solution discharged from the developing solution supply nozzle 70 hits the wafer surface in a direction not against the rotation of the semiconductor wafer W. That is, the developer from the nozzle 70 hits the wafer surface in an oblique direction, and the hit in the oblique direction is not against the rotation of the semiconductor wafer W. In particular, in the fourth and fifth steps, as shown in FIG. 8, the developer supply nozzle 7 is located at the second position P2.
The developer discharged from 0 is almost following the rotation of the semiconductor wafer W and hits the wafer surface.

In order to perform such a follow-up type supply, the scan area is set to the nozzle position shown in FIG.
It is good to set between the nozzle positions. The scan area depends on the number and the pitch of the ejection ports 80 of the nozzle 70, but is set within a quarter area of the semiconductor wafer W.
In this case, it is preferable that the scanning is performed such that the discharge port 80 (1) at the end of the nozzle 70 is orthogonal to the rotation direction of the semiconductor wafer W.

As described above, since the developing solution from the developing solution supply nozzle 70 is supplied onto the semiconductor wafer W with a soft impact, the surface of the wafer may be damaged, and bubbles may be generated in the developing solution being filled. In addition, development processing is performed safely and satisfactorily.

In this developing unit, since the air current flows from the buffer chamber 68 on the back side of the semiconductor wafer W to the outside along the back surface of the peripheral portion of the wafer, the developing solution supplied to the wafer surface from the nozzle 70 is applied to the back surface of the wafer. Without turning
Therefore, the liquid is correctly filled on the wafer surface without soiling the back surface of the wafer, the spin chuck 60 and the like.

[0720] A rinsing nozzle (not shown) is provided separately from the developing solution supply nozzle 70. After the developing process, a rinsing solution is supplied to the semiconductor wafer W via the rinsing nozzle, and the developing solution on the wafer surface is washed. Dropped. Since the rinsing mechanism is not related to the gist of the present invention, its description is omitted.

The spin chuck according to the above-described embodiment,
The structure, shape, and the like of each part such as the cup and the nozzle are merely examples, and various modifications are possible. Further, in the above embodiment, the developer supply nozzle is linearly moved above the semiconductor wafer W. However, for example, the developer supply nozzle is moved in the circumferential direction while the arrangement direction of the discharge ports is aligned with the wafer radial direction. Is also good. The coating and developing system shown in FIGS. 1 to 5 is an example, and the present invention can be applied to other developing systems or apparatuses. Further, the above embodiment relates to an apparatus for developing a photoresist on a semiconductor wafer. However, the present invention can be applied to other substrates to be processed.

[0740]

As described above, according to the first aspect of the present invention,
According to Ming, the impact on the substrate to be processed from the developer is small.
Comb to prevent damage to the substrate and
Quality can be improved.

[0750] The invention according to claim 2 is the invention according to claim 1.
In addition to the light effect, the impact of the processing substrate on the developer
And prevent the generation of air bubbles in the developer,
It can protect the substrate and improve the quality of the development process.
You.

The invention according to claim 3 is the invention according to claim 1.
In addition to the light effect, supply from the nozzle to the surface of the substrate to be processed
Effectively prevents the developing solution from flowing to the back of the substrate
In order to prevent contamination and improve the quality of the development process.
Wear.

[0770] The invention according to claim 4 is the method wherein the present invention is implemented on a substrate to be processed.
Safely and evenly fills the image liquid to minimize development defects
can do.

[0780] The invention according to claim 5 is the invention according to claim 4.
In addition to the light effect, the pull
Lock can be effectively prevented.

[0790]

[0800]

[Brief description of the drawings]

FIG. 1 shows a developing unit (apparatus) according to an embodiment of the present invention.
1 is a plan view showing the overall configuration of a coating and developing processing system including the above.

FIG. 2 is a front view showing the configuration of the coating and developing processing system of FIG.

FIG. 3 is a rear view showing the configuration of the coating and developing processing system of FIG. 1;

FIG. 4 is a schematic front view showing a flow of clean air in the coating and developing processing system of FIG. 1;

FIG. 5 is a schematic side view showing a flow of clean air in the coating and developing system of FIG. 1;

FIG. 6 is a schematic partial cross-sectional side view showing a configuration of a main part of a developing unit in the embodiment.

FIG. 7 is a schematic plan view showing the position of a developer supply nozzle at the start of developing solution discharge in the developing unit of the embodiment.

FIG. 8 is a schematic plan view showing the position of a developer supply nozzle at the end of scanning in the developing unit of the embodiment.

FIG. 9 is a schematic side view for explaining a developing process in the developing unit of the embodiment.

FIG. 10 is a schematic side view for explaining an angle and a height position of a nozzle suitable for a developing process of an embodiment.

FIG. 11 is a schematic side view illustrating a dripping of a developer at a discharge port of a nozzle.

FIG. 12 is a schematic side view illustrating a method of supplying a developing solution to a center point of a wafer in a developing process according to an embodiment.

FIG. 13 is a cross-sectional view illustrating a configuration of a developer supply nozzle in the developing unit of the example.

FIG. 14 is a cross-sectional view illustrating a configuration of a developer supply nozzle according to a modification.

FIG. 15 is a perspective view schematically showing a configuration of a main part of the developer supply nozzle of FIG.

[Explanation of symbols]

 CP cup 60 Spin chuck 66 Ring member 68 Buffer chamber 68a Gas inlet 70 Developer supply nozzle 76 Horizontal nozzle arm 80 (1) ... 80 (n) Discharge port 110 Rectifier plate

Continued on the front page (51) Int.Cl. ⁷ identification code FI H01L 21/30 569F (58) Investigated field (Int.Cl. ⁷ , DB name) H01L 21/027 B05C 11/08 B05C 11/10 G03F 7 / 16 502 G03F 7/30 502

Claims (5)

(57) [Claims] 1. A rotating operation while a substrate to be processed is placed and held.
And supplying a developing solution to the substrate to be processed on the spin chuck.
And an upper surface opened around the spin chuck.
Cup and outside of the cup to put the nozzle on standby
The nozzle standby unit is set above the nozzle standby unit and the spin chuck.
For moving said nozzle between said second position
Nozzle transfer means, and the nozzle transfer means causes the nozzle to wait for the nozzle.
From the peripheral part of the substrate to be processed
Moved to position 1 and stopped at the first position
The discharge of the developing solution from the nozzle is applied to the substrate to be processed.
Be started directly into the cup
And then discharging the developer toward the substrate to be processed.
Move the nozzle to the second position while continuing
Developing device to be moved. 2. A direction that does not oppose the rotation of the substrate to be processed.
And the developing solution from the nozzle is on the surface of the substrate to be processed.
The developing device according to claim 1, wherein 3. The substrate to be processed on the spin chuck.
The air flow from the inside of the substrate to the outside along the periphery of the back of the substrate
The developing device according to claim 1, further comprising a unit. 4. A substrate to be processed is placed on a spin chuck.
Rotate the nozzle up from the side of the substrate to be processed.
To the developing solution through the nozzle.
In the development processing method to supply to the surface of the substrate
Te, before the middle of the nozzle moves above the target substrate
At the first position that does not touch the substrate to be processed,
Starting the discharge of the developer and simultaneously rotating the substrate to be processed at a first rotation speed;
Then, while discharging the developing solution from the nozzle, the nozzle
Moving the chil from the first position to a second
Moving the substrate to be processed to a position at a predetermined moving speed ;
At the same time as rotating at the rotation speed, the second position
The developer is discharged from the nozzle toward the substrate to be processed.
Causing step and, a third lower than the target substrate and the second rotational speed
At the same time as rotating at the rotation speed, the second position
The developer is discharged from the nozzle toward the substrate to be processed.
And a developing process. 5. The method according to claim 1, further comprising the step of switching the rotation speed of the substrate to be processed from the first rotation speed to the second rotation speed at a predetermined acceleration corresponding to the first rotation speed. Item 6. The developing method according to Item 4 .