JP3141135U - Light-emitting diode light inner tube structure - Google Patents
Light-emitting diode light inner tube structure Download PDFInfo
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- JP3141135U JP3141135U JP2008000564U JP2008000564U JP3141135U JP 3141135 U JP3141135 U JP 3141135U JP 2008000564 U JP2008000564 U JP 2008000564U JP 2008000564 U JP2008000564 U JP 2008000564U JP 3141135 U JP3141135 U JP 3141135U
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- 239000004020 conductor Substances 0.000 claims abstract description 60
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000003566 sealing material Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229920000728 polyester Polymers 0.000 description 4
- 239000004800 polyvinyl chloride Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 229920000915 polyvinyl chloride Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
【課題】灯列のインナースリーブにおいて外径寸法を有効的に縮小することによって、歩留の向上をすると共に、原価の低減を図ることのできる、発光ダイオードの灯列インナースリーブ構造を提供する。
【解決手段】発光ダイオードの灯列インナースリーブ構造において、少なくとも一対の陽、陰極導線を平行または互いに巻きつけて設置し、少なくとも陽極側及び陰極側を有する裸チップを一つ具えて前記陽極側及び陰極側をそれぞれ前記陽、陰極導線に電気接続させ、絶縁シール材にて前記導線及び各裸チップを被覆して、細長い灯列スリーブを構成したことを特徴とする発光ダイオードの灯列スリーブ構造である。
【選択図】図5The present invention provides a lamp train inner sleeve structure for a light-emitting diode that can improve the yield and reduce the cost by effectively reducing the outer diameter of the inner sleeve of the lamp train.
In a light-emitting diode-line inner-sleeve structure, at least a pair of positive and negative electrode conductors are installed in parallel or wound around each other, and includes a bare chip having at least an anode side and a cathode side. A light-emitting diode light-line sleeve structure characterized in that a cathode side is electrically connected to the positive and negative-electrode conductive lines, and the conductive line and each bare chip are covered with an insulating seal material to form a long light-line sleeve. is there.
[Selection] Figure 5
Description
本考案は、発光ダイオード(LED,Light
Emitting Diodes) の灯列管状構造に関し、殊に、灯列管において外径を有効的に縮小することによって、歩留の向上をすると共に、原価の低減を図る為のデザイン構造に関する。
The present invention is a light-emitting diode (LED, Light
In particular, the present invention relates to a design structure for improving the yield and reducing the cost by effectively reducing the outer diameter of the lamp train.
伝統的な衆知発光ダイオード(LED,Light
Emitting Diodes)の構造は、少なくとも一つの発光ダイオードチップ10(通称LED裸チッブ)及び一対の互いに平行し、且つ、対応したリードフレーム11,12によって構成され、前記発光ダイオードチップ10を一方リードフレーム12に粘着すると共に、少なくとも一金属フイラメント13(青、緑光類の発光チップは、陽極と陰極の位置が同じ側にある故、二本の金属フイラメントを用いてそれぞれのリードフレームに接続)を用いて前記発光チップ10を他のリードフレーム11に電気接続することによって、前記リードフレーム11,12間において閉鎖状の電気回路を形成し、透明封止材(エポキシ)14を用いて前記部材をランブ形状にシーリングして前記リードフレーム11,12のリード線111,121のみを露出させる(図1参照)。
Traditional light-emitting diode (LED, Light
The structure of the Emitting Diodes) is composed of at least one light emitting diode chip 10 (commonly referred to as an LED bare chip) and a pair of parallel and corresponding lead frames 11 and 12, and the light emitting diode chip 10 is connected to one lead frame 12 And at least one metal filament 13 (the blue and green light emitting chips are connected to each lead frame using two metal filaments because the anode and cathode are on the same side). By electrically connecting the light emitting chip 10 to another lead frame 11, a closed electric circuit is formed between the lead frames 11 and 12, and the member is formed into a ram shape using a transparent sealing material (epoxy) 14 And only the lead wires 111 and 121 of the lead frames 11 and 12 are exposed (see FIG. 1).
しかしながら、前記発光ダイオードの構造は、その殆どが照明用灯具として用いられる通称ランプ型の発光ダイオード(図1参照)である故、組立においてリード線111, 121を発光ダイオード専用ソケット(未表示)上の陽、陰極位置に挿入接続することのみで容易に組立作業が完成され、発光ダイオードが点火される。しかし、前記発光ダイオードをフレキシブル発光燈列に応用する場合、燈列の柔軟性に前記ソケットが影響することを避けるため、大部分がソケットを省略して、それぞれの発光ダイオード陽極リード111及び陰極リード121を陽極導線15と陰極導線16上に直接溶接して、各発光チップ10と陽極導線15及び陰極導線16との間において閉鎖状の直列灯串回路を形成し、尚、絶縁封止材を用いて前記直列灯串回路を被覆して、灯列インナーチューブ100を構成した、灯列インナーチューブ100にPVC材を被覆して現有発光ダイオードの灯列を成す。 However, most of the structures of the light emitting diodes are so-called lamp-type light emitting diodes (see FIG. 1) that are used as lighting fixtures. Therefore, in assembly, the lead wires 111 and 121 are placed on a socket dedicated to the light emitting diodes (not shown). By simply inserting and connecting the positive and negative electrodes, the assembly work can be completed easily, and the light emitting diode is ignited. However, when the light emitting diode is applied to a flexible light emitting array, in order to avoid the influence of the socket on the flexibility of the array, most of the sockets are omitted and the light emitting diode anode leads 111 and cathode leads are omitted. 121 is directly welded onto the anode conductor 15 and the cathode conductor 16 to form a closed serial lamp skew circuit between each light emitting chip 10 and the anode conductor 15 and the cathode conductor 16, and an insulating sealing material is used. The series lamp skewer circuit is used to form the lamp train inner tube 100. The lamp train inner tube 100 is covered with a PVC material to form a lamp train of existing light emitting diodes.
但し、前記灯列インナースリーブの製作方法における欠点は、それぞれの発光ダイオードを溶接してなる故、製造工程が余りにも複雑になって歩留に影響し、尚且つ、前記灯列インナーチューブ100内部に少なくとも発光チッブ10及び発光ダイオードをシーリングする封止材14、リードフレーム11,12等を収納する故、灯列インナーチューブ100の外径θ1が過大になって、インナーチューブ100のデザイン外径を細くすることができない。従って、発光灯列における応用領域に限度をもたらす。 However, the disadvantage of the method for manufacturing the light train inner sleeve is that the respective light emitting diodes are welded, so that the manufacturing process becomes too complicated and affects the yield. Since at least the light emitting chip 10 and the sealing material 14 for sealing the light emitting diode, the lead frames 11, 12 and the like are accommodated, the outer diameter θ1 of the light train inner tube 100 becomes excessive, and the design outer diameter of the inner tube 100 is increased. It cannot be thinned. Accordingly, there is a limit to the application area in the luminous lamp train.
如何に発光ダイオードが構成するインナーチューブ構造を有効的改良して、マスプロに於ける快速生産を達成させると共に、灯列インナーチューブの外径を有効的に縮小させて、灯列における応用領域の向上をはかることが本考案において検討すべき課題でもある。 How to effectively improve the inner tube structure formed by light emitting diodes to achieve rapid production in mass production and effectively reduce the outer diameter of the light train inner tube to improve the application area in the light train Measures are also issues to be considered in the present invention.
前記目的を達成させるため、考案は、発光ダイオードの灯列インナーチューブ構造において、少なくとも一対の陽、陰極導線を平行または互いに巻きつけて設置し、陽極端及び陰極端を有する裸チップを少なくとも一つ具えて、前記陽極端及び陰極端をそれぞれ前記陽、陰極導線に電気接続させ、絶縁封止材にて前記導線及び各裸チップを被覆して、細長い灯列インナーチューブを構成したことを特徴とする。 In order to achieve the above-described object, the present invention provides a light-emitting diode light-inner tube inner tube structure in which at least a pair of positive and negative electrode conductors are installed in parallel or around each other, and at least one bare chip having an anode end and a cathode end is provided. The anode end and the cathode end are electrically connected to the positive and cathode conducting wires, respectively, and the conducting wire and each bare chip are covered with an insulating sealing material to form an elongated lamp train inner tube. To do.
前記の構成により、生産の快速を達成させると共に、灯列インナーチューブの外径寸法を有効的に縮小させる二重効果を具える。 With the above-described configuration, it is possible to achieve a high speed of production and to have a double effect of effectively reducing the outer diameter of the light train inner tube.
本考案の前記発光ダイオードの灯列インナーチューブ構造は、前記陽、陰極導線と前記裸チップとの接触部表面に、絶縁性接着剤を塗布したことを特徴とする。 The lamp inner tube structure of the light emitting diode according to the present invention is characterized in that an insulating adhesive is applied to the surface of the contact portion between the positive and negative electrode conductors and the bare chip.
従って、考案の発光ダイオードの灯列インナーチューブ構造における前記陽、陰極導線は、ポリエステル被覆した銅線又はナイロン被覆したポリエステル銅線、或は、ポリ塩化ビニルスチールワイヤ材で構成されたエナメル線である。 Accordingly, the positive and negative electrode conductors in the light-emitting diode inner-tube structure of the light-emitting diode of the present invention are polyester-coated copper wire, nylon-coated polyester copper wire, or enameled wire made of polyvinyl chloride steel wire material. .
尚、考案における発光ダイオードの灯列インナーチューブ構造の前記インナーチューブ構造は、下記方法を用いて完成される。
ステップ1(S1):陽、陰極導線をそれぞれの冶工具上における導線位置に置く、
ステップ2(S2): LED裸チッブをそれぞれの冶工具上におけるチッブ位置に載せ、裸チップの陰極端と陽極端を、それぞれの陽、陰極導線と電気接続させると共に、
ステップ3(S3):絶縁封止材を用いて陽極導線、陰極導線及びLED裸チップを一灯列チューブ構造にする。
In addition, the said inner tube structure of the lamp train inner tube structure of the light-emitting diode in an idea is completed using the following method.
Step 1 (S1): Place positive and cathode conductors at the conductor positions on the respective tool.
Step 2 (S2): Place the LED bare chip on the chip position on each jig, and electrically connect the cathode end and anode end of the bare tip to the respective positive and cathode conductors.
Step 3 (S3): An anode lead wire, a cathode lead wire, and a bare LED chip are formed into a single-tube structure using an insulating sealing material.
前記の構成により、生産の快速を達成させると共に、灯列インナーチューブの外径寸法を有効的に縮小させる二重効果を具える。 With the above-described configuration, it is possible to achieve a high speed of production and to have a double effect of effectively reducing the outer diameter of the light train inner tube.
考案の発光ダイオード灯列インナーチューブ構造は、前記陽・陰極導線とLED裸チップの陽・陰極端との間に電気接続方式を用い、直接各電極端と導線との間を金属線(通称フイラメント)、又は、陽(陰)極端を陽極(陰極)導線に直接接続して、LED裸チップの陽(陰)極端と陽(陰)極導線との間に電気接続を成す。即ち、前記LED裸チップが赤光又は黄光類型のLED裸チッブの場合は、前記裸チップの陰極端が裸チッブの下側に位置し、前記裸チップの陽極端が裸チッブの上側に位置する故、前記裸チップの陰極端が前記陰極導線と直接電気接続し、前記裸チップの陽極端と陽極導線は、金属線で連結して電気接続効果を達成生する。 The inventive light-emitting diode array inner tube structure uses an electrical connection method between the positive / cathode lead wire and the positive / cathode end of the bare LED chip, and directly connects each electrode end to the lead wire (commonly called filament). ) Or the positive (negative) extreme is directly connected to the anode (cathode) lead, and an electrical connection is made between the positive (negative) and positive (negative) lead of the bare LED chip. That is, when the LED bare chip is a red light or yellow light type LED bare chip, the cathode end of the bare chip is located below the bare chip, and the anode end of the bare chip is located above the bare chip. Therefore, the cathode end of the bare chip is directly electrically connected to the cathode conducting wire, and the anode end and the anode conducting wire of the bare tip are connected by a metal wire to achieve an electrical connection effect.
尚、前記裸チップが青・緑光型LED裸チップである場合は、前記裸チップの陰極端がチッブの上側に位置し、裸チップの陽極端がチッブの下側に位置する故、前記裸チップの陽極端と陰極端は、それぞれの金属線を経て陽極導線及び陰極導線と電気接続する。 When the bare chip is a blue / green light type LED bare chip, the cathode end of the bare chip is located on the upper side of the chip, and the anode end of the bare chip is located on the lower side of the chip. The anode end and the cathode end are electrically connected to the anode lead wire and the cathode lead wire through respective metal wires.
本考案の前記目的を達成するために用いられた技術手段及びその他の効果を図面に合せて、より良き実施例を下記に詳説する。 The technical means and other effects used to achieve the above object of the present invention will be described in detail below with reference to the drawings.
本考案に記述されたLEDチップ(以下、LED裸チップと略称)は、赤・黄光チップ又は青・緑光チッブ等の各種類型裸チップであって、本考案における限定はない。しかし、考案は、赤・黄光及び青・緑光裸チッブの例を主体にして、考案の技術特徴及び効果を下記に詳説したことを先ず記載する。 The LED chips described in the present invention (hereinafter abbreviated as LED bare chips) are various types of bare chips such as red / yellow light chips or blue / green light chips, and are not limited in the present invention. However, the present invention will first describe that the technical features and effects of the present invention are described in detail below, mainly based on examples of red / yellow light and blue / green light bare chips.
図3乃至図7において、図3は、考案における発光ダイオード灯列インナーチューブ構造の製造ステップフローチャートを示し、図4に、考案の発光ダイオード灯列インナーチューブ構造における赤・黄発光チップと陽極導線及び陰極導線の接続図を示す。尚、図5は、図4におけるA‐A線の断面図であって、図6は、考案の発光ダイオード灯列インナーチューブ構造における青・緑発光チップと陽極導線及び陰極導線の接続図で、図7は、図6におけるA‐A線の断面図を示す。 3 to 7, FIG. 3 shows a flow chart of manufacturing steps of the light-emitting diode lamp inner tube structure according to the present invention. FIG. 4 shows a red / yellow light-emitting chip, an anode conductor, and a light-emitting diode lamp inner tube structure according to the present invention. The connection diagram of a cathode conducting wire is shown. FIG. 5 is a cross-sectional view taken along line AA in FIG. 4, and FIG. 6 is a connection diagram of the blue / green light emitting chip, the anode lead wire, and the cathode lead wire in the light-emitting diode lamp inner tube structure of the invention. FIG. 7 is a sectional view taken along line AA in FIG.
前記図面において示されたように、考案において提供される発光ダイオード灯列インナーチューブ構造は、冶工具を用いて高能率生産を達成するため、前記冶工具上に導線位置及び複数の裸チップを設置するチッブ位置を設ける。尚、前記チップ位置間の間隔は、同一ピッチ又は非同一ピッチでも良く、且つ、前記灯列インナーチューブ構造の製造ステップも、考案において限定しない。従って、考案は下記製造ステップにより、前記インナーチューブ構造を製作した。 As shown in the drawing, the light-emitting diode string inner tube structure provided in the device is installed with a conductive wire position and a plurality of bare chips on the jig to achieve high-efficiency production using the jig. A chip position is provided. The intervals between the chip positions may be the same pitch or non-same pitch, and the manufacturing steps of the lamp train inner tube structure are not limited in the invention. Therefore, the device manufactured the inner tube structure according to the following manufacturing steps.
先ず、冶工具上の導線位置に電源接続用の陽極導線30及び陰極導線40を平行に放置(S1)する。通常、外部陽極電源に接続する導線は、陽極導線30と称し、外部陰極電源に接続する導線は、陰極導線40と称す(図4参照)。前記導線を裸チップと電気的に接続させた後、前記導線表面に絶縁性コーティング剤塗布により絶縁層を形成させる。尚、前記絶縁層は、ポリエステル又はナイロン被覆ポリエステル、或は、ポリ塩化ビニール等を用いるも、考案では特に限定しない。従って、前記導線上における絶縁性の提供によって、陽極導線30と陰極導線40とが接触して短絡に成らなければ可である。 First, the anode conducting wire 30 and the cathode conducting wire 40 for power connection are left in parallel at the conducting wire position on the jig (S1). Usually, the lead wire connected to the external anode power source is referred to as the anode lead wire 30 and the lead wire connected to the external cathode power source is referred to as the cathode lead wire 40 (see FIG. 4). After the conducting wire is electrically connected to the bare chip, an insulating layer is formed on the conducting wire surface by applying an insulating coating agent. The insulating layer is made of polyester, nylon-coated polyester, polyvinyl chloride or the like, but is not particularly limited in the invention. Therefore, it is possible if the anode conductor 30 and the cathode conductor 40 are not brought into contact with each other to form a short circuit by providing insulation on the conductor.
次に、発光ダイオードチップ(裸チップ50と略称)を冶工具のチップ位置に放置し、前記裸チップ50の陽極端51と陰極端52とをそれぞれの陽極導線30及び陰極導線40とに電気接続させる(S2)。従って、前記陽・陰極導線30,40と前記裸チップ50の陽・陰極端51,52間は、各陽極端51と陽極導線30との間に接続された金属線511 (通称:フイラメント)及び陰極端52と陰極導線40との接触を経て、陽極端51と陽極導線30及び陰極端52と陰極導線40との間で電気接続方式を成す(図5参照)。 Next, the light emitting diode chip (abbreviated as bare chip 50) is left at the tip position of the jig, and the anode end 51 and the cathode end 52 of the bare chip 50 are electrically connected to the anode lead wire 30 and the cathode lead wire 40, respectively. (S2) Therefore, between the positive / cathode conducting wires 30, 40 and the positive / cathode ends 51, 52 of the bare chip 50, metal wires 511 (commonly referred to as filaments) connected between the anode ends 51 and the anode conducting wires 30 and After contact between the cathode end 52 and the cathode conducting wire 40, electrical connection is made between the anode end 51 and the anode conducting wire 30 and between the cathode end 52 and the cathode conducting wire 40 (see FIG. 5).
その後、透明封止材60を用い、陽極導線30と陰極導線40及び裸チップ50等を直接封止して灯列インナーチューブ70を形成(S3)(図4、5参照)することによって、快速生産且つ有効的灯列インナーチューブ70の外径θ2縮小の二重効果を達成する。 Thereafter, the anode lead wire 30, cathode lead wire 40, bare chip 50, etc. are directly sealed using the transparent sealing material 60 to form the lamp train inner tube 70 (S3) (see FIGS. 4 and 5). The production and effective double effect of reducing the outer diameter θ2 of the light train inner tube 70 is achieved.
尚、用いる裸チップ50の種類によって、考案が採用した裸チッブ50と陽極導線、陰極導線30,40との間における電気接続方式を図4乃至図7に示す。赤・黄光裸チッブ50’類型を用いた場合は、殆どの前記裸チップ50’インナーチューブ陰極端52が裸チップ50’下側にあり、前記裸チップ50’の陽極端51が裸チップ50’上側にある故、この裸チップ50’の陰極端52と陰極導線40との間は、直接接触することで電気接続となり、裸チップの陽極端51と陽極導線30との間は、金属線511の連結によって電気接続される(図5参照)。尚、前記裸チップ50が青・緑光類の裸チップ50”である場合は、裸チップ50”の陰極端と陽極端が共に裸チップ50”の上側にある故、前記裸チップ50”の陽極端51及び陰極端52にそれぞれ金属線511,511を接続して、陽極導線30及び陰極導線40との電気接続を成す(図6乃至図7参照)。 Depending on the type of the bare chip 50 to be used, the electrical connection method between the bare chip 50 and the anode conductors and cathode conductors 30 and 40 adopted by the present invention is shown in FIGS. When the red / yellow light naked chip 50 'type is used, most of the bare tips 50' inner tube cathode end 52 is on the lower side of the bare tips 50 ', and the anode end 51 of the bare tip 50' is bare tips 50. 'Because it is on the upper side, the cathode end 52 of the bare tip 50' and the cathode conducting wire 40 are electrically connected by direct contact, and the anode tip 51 of the bare tip 51 and the anode conducting wire 30 are connected with a metal wire. Electrical connection is established by the connection of 511 (see FIG. 5). When the bare chip 50 is a blue / green light bare chip 50 ″, the cathode end and the anode end of the bare chip 50 ″ are both above the bare chip 50 ″. Metal wires 511 and 511 are connected to the extreme 51 and the cathode end 52, respectively, to make electrical connection with the anode conductor 30 and the cathode conductor 40 (see FIGS. 6 to 7).
図8は、考案の発光ダイオード灯列インナーチューブ構造において、第二陽極導線及び第二陰極導線を増設した場合の接続図を示す。前記図8に示す灯列インナーチューブ構造は、赤・黄光類の裸チッブ50’と青・緑光類の裸チップ50”における陽極端51と陰極端52の位置が異なり、且つ、各類型の裸チップ50’,50”に必要な電流規格も異なる(赤・黄光類裸チッブ50’はDC18 V、青・緑光類の裸チップ51”はDC 27 V使用)。従って、異なる種類の裸チップ50’,50”を同一灯列チューブに配置する場合は、少なくとも一対の陽極導線・陰極導線を設置して、異なる規格の電流及び異なる電気接続方式を提供しなければならない。よって、考案では、増設した陽極導線・陰極導線を第二の陽極導線30’及び第二の陰極導線40’を定義して、異なる類型の裸チップ50’,50”に適宜な電流を提供する。従って、図8における例は、同一灯列インナーチューブ70内部に赤光裸チップRと、青光裸チップBと、黄光裸チップY及び緑光裸チップGの四種類裸チップ50’,50”(四色灯)を挿入配置した場合の考案実施例において、元来設置の陽極導線30及び陰極導線40と同類型の赤光裸チッブR及び黄光裸チップYを電気接続してDC
18 V電源を提供し、又、増設した第二陽極導線30’及び第二陰極導線40’と同類型の青光裸チッブB及び緑光裸チッブGの電気接続を成し、DC 27 Vの電源提供をすることできる。よって、異なる類型の裸チップ50’,50”を同時に同一灯列インナーチューブ70内に実装して、多色光変化の光源効果を達成する。
FIG. 8 is a connection diagram in the case where the second anode lead wire and the second cathode lead wire are added in the light-emitting diode string inner tube structure of the invention. The lamp train inner tube structure shown in FIG. 8 is different in the positions of the anode end 51 and the cathode end 52 in the red / yellow light bare chip 50 ′ and the blue / green light bare chip 50 ″, Different current standards are required for bare chips 50 ', 50 "(red / yellow light bare chip 50' uses DC 18 V, blue / green bare chip 51" uses DC 27 V). When the chips 50 'and 50 "are arranged in the same light tube, at least a pair of anode conductors and cathode conductors must be installed to provide different standard currents and different electrical connection methods. Therefore, in the invention, the added anode lead / cathode lead is defined as the second anode lead 30 ′ and the second cathode lead 40 ′, and appropriate currents are provided to different types of bare chips 50 ′, 50 ″. Therefore, in the example shown in Fig. 8, four types of naked chips 50 ', 50 including a red light naked chip R, a blue light naked chip B, a yellow light naked chip Y, and a green light naked chip G are provided inside the same light train inner tube 70. "In the embodiment of the case where the (four-color lamp) is inserted and arranged, the red light naked chip R and the yellow light naked chip Y of the same type as the originally installed anode lead wire 30 and cathode lead wire 40 are electrically connected to the DC
Provide 18 V power supply, and make electrical connection of blue light naked chip B and green light naked chip G of the same type with the added second anode lead wire 30 ′ and second cathode lead wire 40 ′, and power supply of DC 27 V You can make an offer. Therefore, different types of bare chips 50 ′ and 50 ″ are simultaneously mounted in the same lamp train inner tube 70 to achieve the light source effect of multicolor light change.
又、図9は、考案の発光ダイオード灯列インナーチューブ構造において、陽・陰極導線と第二陽・陰極導線の出入口側に電流切替装置を設けた場合の陽、陰極導線における通電状態の接続図を示し、図10は、発光ダイオード灯列インナーチューブ構造においてそれぞれの陽・陰極導線の電源送入側に電流切替装置を設けた場合の第二陽・陰極導線における通電状態接続図であり、図11は、発光ダイオード灯列インナーチューブ構造において、陽・陰極導線の中段位置に電流切替装置を設けた場合の切替状態と、陽・陰極導線後半部各裸チッブの交差点火状態制御を示す。尚、図12において、考案の発光ダイオード灯列インナーチューブ構造において、陽・陰極導線の中段位置に電流切替装置を設けた場合の切替状態と、陽・陰極導線各裸チッブの交差点火状態の制御方式が示される。 FIG. 9 is a connection diagram of current-carrying states in the positive and negative electrode conductors when a current switching device is provided on the inlet / outlet side of the positive and negative electrode conductors and the second positive / cathode conductor in the light-emitting diode string inner tube structure of the invention. FIG. 10 is a connection diagram of energization states in the second positive / cathode lead when the current switching device is provided on the power supply side of each positive / cathode lead in the light-emitting diode lamp inner tube structure. 11 shows the switching state when a current switching device is provided at the middle position of the positive / cathode conductor in the light-emitting diode array inner tube structure and the cross ignition control of each bare chip in the latter half of the positive / cathode conductor. In FIG. 12, in the light-emitting diode lamp inner tube structure of the invention, the switching state when the current switching device is provided at the middle position of the positive / cathode conductor and the control of the cross-ignition state of each bare cathode of the positive / cathode conductor. The method is shown.
前記図9において、考案は、陽・陰極導線30,40と第二陽・陰極導線30’,40’との電流出入口側(図9参照)又はそれぞれの陽・陰極導線(30,40),(30’,40’)の中段位置に電流切替装置S(図9及び図11参照)を設けることによって、電流の制御をし、それぞれの陽・陰極導線(30,40),(30’,40’)における裸チッブが交差して点火することにより、キラキラと閃くような効果をもたらす。尚、図9において示すように、前記電流切替装置Sを陽・陰極導線(30,40)と第二陽・陰極導線 (30’,40’)の電流出入口に設けた場合は、陽・陰極導線(30,40)上の裸チップ点火を選択(図9参照)、又は、第二陽・陰極導線(30’,40’)上の裸チップ50の点火を選択(図10参照)する。図11乃至図12は、前記電流切替装置Sを陽・陰極導線(30,40),(30’,40’)の中段位置に設置して、それぞれ灯列インナーチューブ70における上半部及び下半部の裸チップ50交差点火の制御を成す。 In FIG. 9, the idea is that the positive / cathode conductors 30, 40 and the second positive / cathode conductors 30 ′, 40 ′ are on the current inlet / outlet side (see FIG. 9) or the respective positive / cathode conductors (30, 40), By providing a current switching device S (see FIGS. 9 and 11) at the middle position of (30 ′, 40 ′), the current is controlled, and the positive / cathode conductors (30, 40), (30 ′, Bare chips in 40 ') cross and ignite, resulting in a sparkling effect. As shown in FIG. 9, when the current switching device S is provided at the current inlet / outlet of the positive / cathode conductor (30, 40) and the second positive / cathode conductor (30 ', 40'), Select bare tip ignition on lead (30, 40) (see FIG. 9) or select bare tip 50 ignition on second positive / cathode lead (30 ′, 40 ′) (see FIG. 10). 11 to 12, the current switching device S is installed in the middle position of the positive / cathode conductors (30, 40), (30 ′, 40 ′), and the upper half and the lower half of the light train inner tube 70 are respectively shown. The half bare chip 50 controls cross-ignition.
図13は、発光ダイオード灯列インナーチューブ構造において、前記インナーチューブ外部にアウトチューブを被覆した場合の別構造状態を示し、図14は、図13におけるB‐B線の断面図を示す。 FIG. 13 shows another structural state in the case where the outer tube is covered outside the inner tube in the light-emitting diode light train inner tube structure, and FIG. 14 is a sectional view taken along line BB in FIG.
考案の灯列インナーチューブ70は、その外側においてポリ塩化ビニール(PVC)材でアウターチューブ(外管)71を形成することによって、発光灯列700(図13参照)を構成することも可である。考案は、発光灯列700において強靭性を具えさせるため、アウターチューブ71内部に少なくとも一本の牽引線711(図14参照)を設けることによって、発光灯列700に適宜な靭性を与えて、引張り又は発光灯列700の撓み過大による断裂、或は実装不可等の悩み発生を避けている。尚、前記牽引線711, 711も導電性金属 (錫メッキ銅線使用)で構成されてある故、前記金属牽引線711,711を灯列インナーチューブ70の陽極導線30及び陰極導線40末端と接続し、前記陽極導線30及び陰極導線40との間に電気回路(図13参照)を形成する。 The inventive light train inner tube 70 can be configured as a light-emitting light train 700 (see FIG. 13) by forming an outer tube (outer tube) 71 with a polyvinyl chloride (PVC) material on the outside thereof. . In order to provide the toughness in the light-emitting lamp train 700, by providing at least one traction line 711 (see FIG. 14) inside the outer tube 71, the light-emitting lamp train 700 is appropriately stretched and pulled. Alternatively, it is possible to avoid troubles such as tearing due to excessive deflection of the light-emitting lamp row 700, or mounting failure. Since the pulling wires 711 and 711 are also made of a conductive metal (using a tin-plated copper wire), the metal pulling wires 711 and 711 are connected to the anode conducting wire 30 and the cathode conducting wire 40 end of the light train inner tube 70, An electric circuit (see FIG. 13) is formed between the anode conductor 30 and the cathode conductor 40.
以上の記述により、考案は習用発光ダイオード灯列インナーチューブ構造と異なる。考案は、発光ダイオードのリード線をそれぞれ陽極導線及び陰極導線に溶接する習用方式に透明封止材を用いて陽極導線及び陰極導線と裸チップを固定すると共に、一体に被覆する故、裸チップそれぞれのリード線溶接が不必要となり、透明封止材による封止のみで、裸チップと陽極導線及び陰極導線との間に電気回路を構成する他、マスプロにおける快速生産効果の目的を達成する。尚且つ、考案は、発光ダイオードにおける余計なリードフレーム及びランプ状の封止を省略して、直接裸チップを用い、発光ダイオード末端のコスト節減を成すと共に、発光灯列の外形寸法を最小状態に制御して、前記発光灯列の応用領域を向上させている。 Based on the above description, the device differs from the conventional light-emitting diode light train inner tube structure. The idea is to use a transparent encapsulant to fix the anode and cathode conductors and the bare chip to the customary method of welding the light-emitting diode lead wires to the anode and cathode conductors, respectively, and to cover the bare chip, respectively. In addition to forming an electric circuit between the bare chip, the anode conductor and the cathode conductor only by sealing with a transparent sealing material, the purpose of rapid production effect in mass production is achieved. In addition, the device eliminates the unnecessary lead frame and lamp-shaped sealing in the light-emitting diode, directly uses the bare chip, reduces the cost of the light-emitting diode end, and minimizes the outer dimensions of the light-emitting lamp row. By controlling, the application area | region of the said light-emitting lamp row | line | column is improved.
本考案は、以上のより良き実施例で考案のメリット説明を行うも、以上の説明は、単なる考案での実施例のみであって、考案の実施範囲を拘束するものではない。従って、本考案の登録請求範囲に述べる特徴及び主旨による同一変化及び修飾等は、考案の出願範囲に包含されるべきであることをも主張する。 Although the present invention will explain the merit of the invention in the above-described better embodiments, the above description is only an embodiment of the invention and does not restrict the scope of the invention. Accordingly, it is also claimed that the same changes and modifications as described in the claims of the present invention should be included in the scope of application of the present invention.
10 LEDチップ
100 インナーチューブ
11 リードフレーム
111 リード線
12 リードフレーム
121 リード線
13 金属線
14 透明封止材(エポキシ)
15 陽極導線
16 陰極導線
30 陽極導線
30’ 第二陽極導線
40 陰極導線
40’ 第二陰極導線
50 LED裸チップ
50’ LED裸チップ
50” LED裸チップ
51 陽極端
511 金属線
52 陰極端
60 透明封止材
70 灯列インナーチューブ
700 串状発光ランプ
71 アウターチューブ
711 牽引線
θ1 外径
θ2 外径
R 赤光LED裸チップ
B 青光LED裸チップ
Y 黄光LED裸チップ
G 緑光LED裸チップ
S 電流切替装置
10 LED chip
100 inner tube
11 Lead frame
111 Lead wire
12 Lead frame
121 Lead wire
13 Metal wire
14 Transparent encapsulant (epoxy)
15 Anode conductor
16 Cathode conductor
30 Anode conductor
30 'second anode lead
40 Cathode conductor
40 'second cathode conductor
50 LED bare chip
50 'LED bare chip
50 ”LED bare chip
51 Anode end
511 metal wire
52 Cathode end
60 Transparent encapsulant
70 Light train inner tube
700 Skewer-shaped light emitting lamp
71 Outer tube
711 Traction line θ1 outer diameter θ2 outer diameter
R Red LED bare chip
B Blue light LED bare chip
Y Yellow LED bare chip
G Green LED bare chip
S Current switching device
Claims (5)
少なくとも一対の陽、陰極導線を平行または互いに巻きつけて設置し、
陽極端及び陰極端を有する発光ダイオード裸チップを、少なくとも一つ具えて前記陽極端及び陰極端をそれぞれ前記陽極導線、陰極導線に電気接続させ、透明封止材にて前記導線及び各裸チップを被覆して、細長い灯列管状を構成したことを特徴とする、発光ダイオードの灯列管状構造。 In the light tube inner tube structure of light emitting diodes,
Install at least a pair of positive and negative electrode conductors in parallel or around each other,
At least one light emitting diode bare chip having an anode end and a cathode end is provided, and the anode end and the cathode end are electrically connected to the anode conductor and the cathode conductor, respectively, and the conductor and each bare chip are connected with a transparent sealing material. A light-emitting diode light-tube tubular structure, characterized in that the light-emitting diode is formed into an elongated light-tube tube.
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