JP3069504B2 - Energy beam processing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an energy source in which fine particles are dispersed and arranged on the surface of a workpiece and irradiated with an energy beam to perform fine processing in the order of the size of the particles or in the order of a minute size smaller than the size of the particles. It relates to a beam processing method.

[0002]

2. Description of the Related Art Substrate processing in a semiconductor process includes:
A photolithography technique using a photoresist mask having a shape corresponding to a processing pattern of a substrate has played an important role. In substrate processing by the photolithography technique, a portion of the substrate that is not processed is covered with a photoresist mask, and a portion that is not covered with the photoresist mask is subjected to an etching process, and is processed to a depth corresponding to a processing time.

FIG. 8 shows a process example of a conventional fine processing method using a photoresist mask, and FIG.
(E) show the first to fifth steps. First, in a first step, a resist material 2 is coated on a processing substrate 1. Next, in a second step, the resist material 2 on the surface of the processing substrate 1 is irradiated with ultraviolet rays 4 with the photomask 3 interposed therebetween, and the pattern holes 3a formed in the photomask 3 are transferred to the resist material 2. Next, in a third step, a portion of the resist material 2 that has been irradiated with the ultraviolet rays 4 through the pattern holes 3a by development is removed, leaving only a necessary photoresist film. In the following fourth step, anisotropic etching is performed on a portion of the processing substrate 1 where there is no resist material 2 by using ions or radical species in the plasma, and the resist material 2 is removed in the final fifth step. As described above, the pattern holes 3a of the photomask 3 are formed on the surface of the processing plate 1 through the first to fifth steps.
Fine processing for forming a hole 1c having the same shape as that described above is performed. In addition,
In a general semiconductor device, it is usual that a plurality of holes having different depths are formed on the processing substrate 1 by repeating the first to fifth steps.

[0004]

In the above-mentioned microfabrication method using the conventional photolithography technique, a photomask 3 having a photoresist pattern whose manufacturing process is complicated is indispensable.
In order to process to the following line width or diameter, special equipment and devices are required, and considerable loss in time and cost must be prepared. It was not applicable. In addition, since the resist material 2 is indispensable to be exposed to ultraviolet light or an electron beam, usable materials are naturally limited,
When the resist material 2 becomes a contaminant component, there is a restriction that the resist material 2 cannot be used. Further, with respect to the preparation of a photoresist film, it is difficult to uniformly irradiate a sample having a poor surface flatness or roughness with ultraviolet light, so that it is difficult to form a uniform and accurate resist film.

[0005] Also, using a conventional plasma process,
Even when processing a pattern structure of μm or less, the number of energetic particles obliquely incident is large due to the impact of gas particles and charge-up of the resist material. Processing, that is, processing with a high aspect ratio (ratio of structure width to processing depth) is difficult, and processing with a structure width of 1 μm or less was almost impossible.

Accordingly, an object of the present invention is to enable fine processing on a nanometer scale by dispersing and arranging fine particles on the surface of a workpiece and performing processing by irradiating an energy beam. A magnetic field, an electric field, or a laser is used to control the placement of fine particles, and after irradiating with an energy beam, isotropically processing in chemically reactive gas particles or a solution to achieve a finer and higher aspect ratio structure To make things.

[0007]

According to the present invention, fine particles having a diameter of 0.1 nm to 10 nm, 10 nm to 100 nm, or 100 nm to 10 μm for shielding an energy beam are dispersed and arranged on the surface of a workpiece. The above object is achieved by providing an energy beam processing method characterized by irradiating an energy beam on a surface of the workpiece excluding a portion shielded by the fine particles.

[0008] The present invention also provides a process for processing the surface of the workpiece in the depth direction by irradiating the energy beam, while gradually reducing the diameter of the fine particles, and forming a tapered rod-shaped structure at a shielding position of the fine particles. Processing a product, or dispersing the fine particles almost uniformly with a surfactant in a solvent such as ethanol to form a solution, and dropping the solution on the surface of the workpiece or processing the workpiece in the solution. To achieve the above object by providing an energy beam processing method characterized in that the fine particles are uniformly dispersed and arranged on the surface of the workpiece by immersing the workpiece and irradiating the workpiece with an energy beam. It is.

Further, according to the present invention, a magnetic field, an electric field, a laser or the like is applied to the fine particles on the surface of the workpiece to control the arrangement of the fine particles in accordance with a processing pattern, or to perform fine processing by irradiating an energy beam. Introducing gas particles having chemical reactivity with the workpiece to the processed workpiece, controlling the chemical reactivity of the surface of the workpiece by controlling the temperature, and isotropically controlling the surface of the workpiece. The object is achieved by providing an energy beam processing method characterized by processing.

[0010]

According to the present invention, substantially nanometer-scale particles for shielding an energy beam are dispersed and arranged on the surface of a workpiece, and the workpiece is irradiated with an energy beam.
By processing the surface of the workpiece excluding the portion shielded by the fine particles, it becomes possible to perform fine processing that is difficult to realize with the conventional photolithography technology.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a process chart showing one embodiment of the energy beam processing method of the present invention.

As shown in FIG. 1A, fine particles 12 of cobalt, Zn (zinc), or ferrite having a diameter of about 5 nm to 1 μm are formed on a surface of a sample 11 such as GaAs, Si, or glass to be processed. Distribute and arrange. This dispersion arrangement is performed by adhesion. Specifically, the fine particles 12 are mixed together with a surfactant in a solvent such as ethanol, and the sample 11 is immersed in a solution having a uniform concentration by stirring, or By dropping the solution on the surface of the sample 11 and drying it, the fine particles 12 can be uniformly attached to the surface of the sample 11. Thus, the particles 1 that shield the energy beam
2 are uniformly distributed on the surface of the sample 11 with stochastic accuracy.

Next, the sample 11 is irradiated with a high-speed atomic beam 13 as an energy beam in a direction substantially perpendicular to the direction indicated by an arrow in FIG. At this time, the portion covered with the fine particles 12 shields the fast atomic beam 13,
Only the portion not covered by 2 is processed by the high-speed atomic beam 13, and the processing shown in FIG. 1B proceeds.

However, since the processing by the high-speed atomic beam 13 extends not only to the sample 11 but also to the fine particles 12, strictly speaking, the fine particles 12 are gradually reduced in diameter as the irradiation proceeds. However, the shape change of the fine particles 12 differs depending on the reactivity with the gas used for the fast atom beam 13. Therefore,
In order to realize processing with a high aspect ratio, a high-speed atomic beam 13 composed of a gas having a low reactivity with the rare gas or the fine particles 12 and a high reactivity with the sample is used here.
(2) A processing method for minimizing the shape change is adopted.
As a result, only the portion where the fine particles 12 have adhered can be left unprocessed as a bar-shaped vertical wall. The rod-like structure 14 thus left on the surface of the sample 11
Has a rod-shaped fine structure having a cross-sectional diameter of 5 nm to 1 μm in accordance with the size of, and the more uniform the particle size, the more uniform the shape becomes.

A gas having a high reactivity with the sample 11, such as chlorine gas or fluorine gas, is introduced into the sample 11 which has been subjected to the energy beam processing, and the sample 11 is heated by a heater or a heating lamp. , FIG.
As shown in (C), legal processing without directionality can be performed. By performing this equal processing, not only the residual fine particles 12 but also the rod-shaped structure 14 is reduced at a fixed ratio, and a rod-shaped structure having a finer cross-sectional shape as compared with the processing using only the high-speed atomic beam 13. The object 14a can be finished. Moreover, the fine particles 12
Since a is unnecessary in many cases, it may be removed from the top of the rod-shaped structure 14a by, for example, ultrapure water jet cleaning.

By the way, the sample 11 used for the above-mentioned energy beam processing is GaAs, Si,
Any material such as a substrate such as SiO ₂ , an insulating glass or ceramic, or a metal material can be used. When ultrafine particles of 0.1 μm or less are required for the fine particles 12, it is preferable to use ultrafine particles of ferrite, zinc, cobalt, diamond, or the like.
When a particle size of 10 μm is required, fine particles 12 such as alumina, graphite, gold fine particles, and silver fine particles may be used. Further, when selecting these fine particles 12 in terms of the material, it is preferable to use an appropriate material in consideration of the reactivity with the reactive gas particles, the sputtering characteristics, and the like.

In the above embodiment, a rare gas or a high-speed atomic beam 13 of a gas having a high reactivity with the substrate and a low reactivity with the fine particles is used as the energy beam, and the reactivity between the energy beam and the fine particles 12 is determined. As an embodiment slightly different from this, FIGS.
The energy beam processing method in which the processing steps are shown in (E) is also significant. In this processing method, the shape change of the fine particles themselves due to the energy beam is expected to some extent, and here, GaAs, AlGaAs, InA
A III-V type semiconductor material such as s is used. Further, as a fast atom beam 23, a fast atom beam of chlorine gas is used, and as fine particles 22, a particle diameter of 1 nm showing reactivity to the fast atom beam 23 of chlorine gas. Ultrafine diamond particles of about 50 nm are used.

First, as shown in FIG.
Ultrafine diamond particles 22 are dispersed and arranged on the surface of the substrate 1 and a high-speed atomic beam 23 of chlorine gas is irradiated in the direction of the arrow. As a result, as shown in FIGS.
While the processing of the surface proceeds, the diamond fine particles 22 are also gradually processed at the same time at a processing speed lower than that. As the diameter of the diamond fine particles 22 is reduced, the shielding area of the diamond fine particles 22 with respect to the fast atomic beam 23 is also reduced.
The portion of the sample 21 shielded by the above is processed into a tapered rod-shaped structure 24 as shown in FIG. In the embodiment, the beam irradiation is continued until the diamond fine particles 22 disappear.
As shown in (E), a spire, that is, a tapered rod-like structure 24 having a sharp tip is realized. Incidentally, the rod-shaped structure 24 actually manufactured by this processing method has a height of 250 nm despite its tip having a fine diameter of 10 nm.
And a sufficient aspect ratio.

In order to further sharpen the tip of the rod-shaped structure 24 after the energy beam machining, as in the above embodiment, only the chlorine gas is introduced after the beam irradiation, and the sample 21 is heated by a heater or a heating lamp. Thus, isotropic processing can be performed. In this case, the rod-shaped structure 24 is further tapered to have a tip diameter of 0.1 nm to 5 nm. In addition, when the chemical reaction surface processing by heating is performed after irradiation with the high-speed atomic beam in this way, it is effective for smoothing the surface and removing the damaged layer, such as when manufacturing a quantum effect device. Especially effective. The quantum effect refers to an effect exhibiting characteristics different from the bulk characteristics of a microstructure, such as shifting the wavelength of light to a shorter wavelength side or changing the level of electron energy. The light or laser light emitted from the structure shows a shifted wavelength to the short wavelength side different from the bulk, or when the laser light is passed through a rod-shaped structure, the laser light becomes shorter due to the quantum effect. , It is possible to amplify the intensity of the laser light.

The workpieces 30 and 40 shown in FIGS.
This shows an example of processing when energy beams are processed by regularly arranging fine particles on a two-dimensional plane. That is, the workpiece 30 shown in FIG. 3 has a column 31 arranged as a rod-shaped structure on the surface of the sample 31 according to a predetermined arrangement pattern (matrix arrangement pattern).
The workpiece 40 shown in FIG. 1 has a configuration in which cones 44 are arranged in a predetermined matrix arrangement pattern as rod-shaped structures on the surface of a sample 41. The processing method in this case basically follows the above-described beam irradiation, but uses a laser, an electric field or a magnetic field to control the arrangement of the fine particles 32, and uses a rod-shaped structure (column 34 or cone 44). Can be said to be a more advanced processing method in forcing from a stochastic distribution array to a regular distribution array. Since the laser ionizes the irradiated fine particles 32 themselves or ionizes the periphery of the fine particles 32 to form plasma, the fine particles 32 irradiated with the laser are ionized and have a charge. For this reason, an electric field is applied to the laser condensing point to trap fine particles.
Thus, the fine particles 32 adhering to the samples 31, 41, which are the workpieces, are arranged as expected.

When the effect of an electric field is used instead of the laser, an electric field is applied to the trapping electrode to polarize the fine particles 32, and the trapped fine particles 32 are moved to a desired position to form a regular pattern. An array can be achieved. Further, when utilizing the effect of a magnetic field, fine particles 32 made of a magnetic material such as ferrite are dispersed in a solution, and a magnetic field is externally applied by an electromagnet or a permanent magnet, and the fine particles 32 are regularly arranged along the magnetic flux. Can be done. When positioning the fine particles 32 in nano units, for example, an electrode or a magnetic pole is attached to the piezo element, and the voltage applied to the piezo element is varied to expand or contract the piezo element in nano units. Can be controlled, and the fine particles 32 can be accurately positioned.

The workpiece 50 shown in FIG. 5 is an example in which a plurality of columnar structures 54 are energy beam-processed on two oblique side surfaces 51a and 51b of a sample 51 in an arrangement pattern in which a plurality of columnar structures 54 are arranged in a line. It shows. The cross-sectional diameter of each columnar structure 54 is 1 nm to 20 nm, and its height is 10 nm to 500 nm. The optical axes connecting the two columns of the columnar structures 54 intersect at a point P, and receive the laser from the laser emitting device 55 to amplify the quantum effect. Alternatively, resonator mirrors are provided on both sides of the rod-shaped structure, and laser light with a quantum effect emitted therefrom is emitted. In this case, since the two columns of columnar structures 55 shift the laser by a short wavelength or oscillate at a high intensity, a high intensity light field is formed at the point P where the two lines of the laser are concentrated. The technique of forming a high-intensity light field by using such a plurality of fine columnar structures 54 can be applied not only to the above-described trapping operation of fine particles by a laser, but also by irradiating atoms on a material surface with a laser. It can also be applied to surface atomic photoreactions such as emitting light, flying or ionizing atoms, or breaking chains between atoms, opening the way to a wide range of applied technologies.

A workpiece 60 shown in FIG. 6 is obtained by forming a superfine conical structure 64 of Si on the Si substrate constituting the sample 61 by following the steps shown in the second embodiment. In this embodiment, in consideration of using a Si substrate as the sample 61, a high-speed atomic beam using fluorine-based gas particles such as SF ₆ is used as the energy beam. The isotropic processing is also performed by producing a plasma of fluorine-based gas particles and supplying a large amount of the generated fluorine radicals to the sample surface after high-speed atomic beam irradiation. The Si conical structure 64 formed in this manner can be provided with an AFM (atomic force microscope) for observing the surface state of the material, or an STM.
(Tunneling microscope) Can be used as a needle at the tip of a cantilever. The needle at the tip of the cantilever is used as a probe for unevenness on the surface of the observation target, and the surface shape can be observed from the vertical movement of the needle following the unevenness on the surface. Further, since the conical structure 64 has a sharp structure, the electric field can be easily concentrated, and therefore, the conical structure 64 can also be used as a field emission electron source that outputs an electron beam from a needle. With field emission, a needle-shaped micro-emitter manufactured as a fine conical structure is surrounded by an insulator,
By controlling the potential of the beam extraction electrode provided in the insulator opening, an electron beam is emitted from the tip of the microemitter, and can be applied to an electron beam lithography system used in electron beam nanolithography technology, etc. is there.

FIG. 7 shows an ultrafine structure element 7 which has been subjected to three-dimensional multi-face processing using the energy beam processing method of the present invention.
0 shows a production example. On the upper surface 71a and the side surface 71b of the cubic sample 71, there are a conical structure 74 and a columnar structure 75 having a fine structure processed by the above-described processing method, respectively, and each exerts a different quantum effect. I do. The laser L1 is optically amplified between the mirror 74a and the emission mirror 74b that are opposed to each other with the conical structure 74 interposed therebetween, and the laser is output between the mirror 75a and the emission mirror 75b that are opposed to each other with the cylindrical structure 75 interposed therebetween. When L2 is optically amplified, both lasers L1 and L2 oscillate at different wavelengths according to the difference in quantum effect based on the shapes of the conical structure 74 and the cylindrical structure 75.

The laser L1 oscillated and output via the output mirror 74b and the laser L2 oscillated and output via the output mirror 75b have different wavelengths.
After being bent at a right angle in the optical path at 6, 77, it is guided to the front surface 71c of the sample 71. The laser guided to the front surface 71 c of the sample 71 is selected or synthesized by the rotating mirror 78, and then detected by the light detector 79. The rotating mirror 78 is composed of optical mirrors having wavelength selectivity on the front and back surfaces so that two kinds of wavelengths can be selected and synthesized. The lasers L1 and L2 are turned one side in accordance with the rotating phase of the rotating mirror 78. Only one or both can pass through the rotating mirror 78, whereby a wavelength selecting element capable of selecting and mixing two kinds of wavelengths can be realized.

Further, in order to use the ultrafine structure element 70 as, for example, a data generation source for information communication, if two data strings having different wavelengths are transmitted via the same bus line or separate bus lines, a single wavelength , The transmission time is reduced to 比 べ compared with the case where a 16-bit data amount is transmitted using. This is because pulse data having different wavelengths can be transmitted simultaneously using the same optical fiber bus line. In this case, the photodetector 79
Has built-in wavelength selection elements sensitive to wavelengths λ1 and λ2, and receives reception data from each wavelength selection element via eight data lines connected to a preamplifier and a parallel signal generator, respectively. 8-bit data is transmitted to each element and related equipment. That is, 2
Since the data for the wavelengths can be processed at one time, the data amount of 2 × 8 = 16 bits can be reduced in half the time. Similarly, if the number of wavelength types is increased, it is possible to increase the data amount of integer multiple bits in the same time. In this case, since data having different wavelengths are simultaneously transmitted by the ultrafine structure element 70, a large amount of information can be transmitted at one time, and thus, a very high capacity information transmission element can be realized.

Note that, instead of the rotating mirror 78, a half mirror or an electrically controllable polarizing element may be used. Further, the photodetector 79 can be configured by using two independent light receiving elements corresponding to the respective wavelengths λ1 and λ2. In this case, although it is necessary to align the phases of the transmission data, the mirror for distributing the emitted light is required. Becomes unnecessary. further,
By forming two or more rod-shaped structures on the ultrafine structure element 70, two or more data strings having different wavelengths can be transmitted simultaneously.

The energy beam applicable to the above-described energy beam processing method of the present invention includes a fast atomic beam, an ion beam, an electron beam, a laser, a radiation beam, an atom beam,
Molecular beam and the like can be mentioned, and the characteristics of each are as follows. A fast atom beam, which is a fast neutral energy particle beam, can be applied to any material such as a metal, a semiconductor, or an insulator, and an ion beam is very effective for a metal material. By introducing a gas reactive with the sample simultaneously with the irradiation of the electron beam, a chemical reaction can be caused only at the place where the electron beam was irradiated. Further, the radiated light can be processed by irradiating the sample surface directly with only the radiated light, or by performing the processing by utilizing the interaction with the reactive gas particles. The atomic / molecular beam enables low energy beam processing by irradiating the atomic / molecular beam of the reactive gas particles. Therefore, various energy beams may be used depending on the processing purpose.

[0029]

As described above, according to the present invention,
The diameter of the energy beam shielding surface of the workpiece is 0.1 nm to 10 nm or 10 nm to 10 nm.
Fine particles of 0 nm or 100 nm to 10 μm are dispersed and arranged, and the work is irradiated with an energy beam,
Since the surface of the workpiece is processed except for the portions shielded by the fine particles, it is possible to perform fine processing on the order of the size of the fine particles or on the order of a finer size than the fine particles, which is difficult with the conventional photolithography technology. It is possible to manufacture ultra-fine processed structures, and fine particles need only be adhered to the surface of the workpiece, so that they can be easily arranged regardless of the roughness or flatness of the surface of the workpiece, and therefore the surface For a sample with poor flatness or roughness, it is difficult to uniformly irradiate ultraviolet light, so it is difficult to apply a uniform and accurate resist film. Unlike conventional photolithography technology that could only be applied, ultra-fine processing of a three-dimensional structure is possible by dispersing and dispersing ultra-fine particles locally or on multiple surfaces of the sample, and it is particularly excellent in directivity In combination with anisotropic processing in the ultra-fine area by energy beam processing, the processing accuracy can be improved, and by arranging and processing fine particles regularly by applying a laser, magnetic field or electric field, etc. It is possible to realize a small quantum effect device, a memory device, and an optical device, and to provide an excellent effect such as providing a processing method that is very significant both academically and industrially.

Further, according to the present invention, while the surface of the workpiece is processed in the depth direction by irradiation with an energy beam, the fine particles are gradually reduced in diameter, and a tapered rod-like structure is formed at a shielding position of the fine particles. Since processing is performed, for example, by using fine particles having low reactivity and a low sputtering rate with respect to reactive gas particles used as an energy beam, a change in shape of the fine particles during processing is suppressed, and the workpiece is processed by a vertical wall. By processing particles into a rod-like structure with walls close to the surface, or by using fine particles that are highly reactive to reactive gas particles used as an energy beam and have a high sputtering rate, the fine particles change shape significantly during processing, The workpiece can be machined into a tapered rod-like structure such as a cone or pyramid, and the shape of the structure remaining on the surface of the workpiece can be machined to any desired shape. An effect such as that.

Further, the present invention is directed to a method of manufacturing a workpiece which has been subjected to fine processing by irradiating an energy beam with gas particles exhibiting chemical reactivity with respect to the workpiece, and controlling the temperature by controlling the temperature. Since the surface chemical reactivity is controlled and the surface of the workpiece is processed isotropically, a gas having a high reactivity with the sample, such as chlorine gas or fluorine gas, is applied to the sample subjected to the energy beam processing. By introducing the particles and heating the sample with a heater or a heating lamp, it is possible to perform non-directional equal processing, and by performing this processing, not only residual fine particles but also rod-shaped The structure is also reduced in size at a fixed ratio, and has effects such as finishing a rod-shaped structure having a finer cross-sectional shape as compared with processing using only high-speed atomic beams.

Further, according to the present invention, as the energy beam, a fast atomic beam, an ion beam, an electron beam, a laser, a radiation light, or an atomic / molecular beam is used.
For example, when an atomic beam that is a fast neutral energy particle beam is used as an energy beam, it can be applied to any material such as a metal, a semiconductor, or an insulator. When the electron beam is used as an energy beam, it is very effective for metal materials. Chemical reaction can occur only in the place where it has occurred, and when using synchrotron radiation as the energy beam, processing can be performed by irradiating the sample surface directly with synchrotron radiation, or using interaction with reactive gas particles. A wide variety of processing is possible by performing the processing by using an atomic or molecular beam as the energy beam. And irradiating an atomic and molecular beams the effect of equal are possible beam processing of low energy.

[Brief description of the drawings]

FIG. 1 is a process chart showing one embodiment of an energy beam processing method of the present invention.

FIG. 2 is a process chart showing another embodiment of the energy beam processing method of the present invention.

FIG. 3 is a perspective view illustrating a processing example of a workpiece when energy beams are processed by regularly arranging fine particles on a two-dimensional plane.

FIG. 4 is a perspective view showing another processing example of the workpiece when the energy beam processing is performed by regularly arranging fine particles on a two-dimensional plane.

FIG. 5 is a plan view showing a processing example of a workpiece when a plurality of rod-shaped structures are each subjected to energy beam processing in a predetermined arrangement pattern on two surfaces oblique to each other.

FIG. 6 is a side view showing a processing example of a workpiece in which an ultra-fine conical structure of Si is formed through the steps shown in the second embodiment.

FIG. 7 shows the result of applying the energy beam processing method of the present invention to 3
It is a figure which shows the processing example of the ultrafine structure element which performed the multidimensional processing of two dimensions.

FIG. 8 is a process chart showing an example of a substrate processing method to which a conventional photolithography technique is applied.

[Explanation of symbols]

 11, 21, 31, 41, 51, 61, 71 Sample 12, 22 Fine particles 13, 23 Fast atom beam 14, 24 Rod-shaped structure 30, 40, 50, 60 Workpiece 34 Column 44 Conical 54, 75 Column-shaped structure Object 64,74 Conical structure 70 Ultra-fine structure element

──────────────────────────────────────────────────続 き Continuation of the front page (51) Int.Cl. ⁷ identification code FI G02F 1/35 G02F 1/35 H01S 3/00 H01S 3/00 B (58) Field surveyed (Int.Cl. ⁷ , DB name ) B01J 19/08 B23K 17/00 B23K 26/00 B26F 3/00 C23F 4/02 G02F 1/35 H01S 3/00

Claims (6)

(57) [Claims] 1. A surface of a workpiece has a diameter of 0.1 nm to 10 nm or 10 n for shielding an energy beam.
m to 100 nm or 100 nm to 10 μm
Wherein the fine particles are dispersed and arranged, and the work is irradiated with an energy beam to process the surface of the work except for a portion shielded by the fine particles. 2. The irradiation of the energy beam, while processing the surface of the workpiece in the depth direction, gradually reducing the diameter of the fine particles, and processing a tapered rod-like structure at a shielding position of the fine particles. The energy beam processing method according to claim 1, wherein: 3. A solution is prepared by dispersing the fine particles almost uniformly with a surfactant in a solvent such as ethanol, and the solution is dropped on the surface of the workpiece or the workpiece is immersed in the solution. The energy beam processing method according to claim 1, wherein the fine particles are uniformly dispersed and arranged on a surface of the workpiece, and the workpiece is irradiated with an energy beam. 4. The method according to claim 1, wherein a magnetic field, an electric field, a laser or the like is applied to the fine particles on the surface of the workpiece to control the arrangement of the fine particles in accordance with a processing pattern. Energy beam processing method. 5. A method in which gas particles exhibiting chemical reactivity with respect to the workpiece are introduced into the workpiece which has been subjected to fine processing by irradiating an energy beam, and the chemical reactivity of the surface of the workpiece is controlled by controlling the temperature. 5. The energy beam processing method according to claim 1, wherein the surface of the workpiece is processed isotropically. 6. The energy beam according to claim 1, wherein the energy beam is a fast atomic beam, an ion beam, an electron beam, a laser, a radiation, or an atomic / molecular beam. Processing method.