JP2931468B2 - Electronic component storage package - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a package for accommodating electronic components such as semiconductor elements and quartz oscillators.

[0002]

2. Description of the Related Art Conventionally, a package for storing electronic parts, for example, a package for storing semiconductor elements, is usually made of an electrically insulating material such as alumina ceramics. Electrically connecting the semiconductor element to an external electric circuit, and an insulating base having a metallized wiring layer made of a refractory metal powder of tungsten, molybdenum, manganese or the like led out from the periphery of the concave part to the outside. And an external lead terminal attached to the metallized wiring layer via a brazing material such as silver brazing, and a lid made of an electrically insulating material such as alumina ceramics. Is fixed by an adhesive, and each electrode of the semiconductor element is electrically connected to the metallized wiring layer through a bonding wire. Are joined by a sealing material made of brazing material such as solder the lid on the insulating substrate top surface with connecting,
A semiconductor device as a product is obtained by hermetically sealing a semiconductor element inside a container including an insulating base and a lid.

In the conventional package for housing a semiconductor element, the lid is bonded to the insulating base by forming a layer made of a high melting point metal powder such as tungsten, molybdenum or manganese on the opposing main surfaces of the insulating base and the lid. And a metal layer having a three-layer structure of a layer made of nickel and a layer made of gold are adhered to each other, and the metal layers adhered to each of the insulating base and the lid are joined via solder as a sealing material. It is done by that.

In order to improve the workability of the insulating base and the lid, solder as a sealing material is bonded to the entire surface of the metal layer previously applied to the lid, and the insulating base is joined to the insulating base. A lid is placed on the metal layer such that the solder is sandwiched therebetween, and then the lid is pressed against the insulating base with a constant pressure, and a temperature of about 300 to 350 ° C. is applied to the solder, This is performed by heating and melting the solder.

[0005] Further, the solder is bonded to the metal layer adhered to the lid by a conventionally well-known screen printing method using a solder paste obtained by adding an appropriate organic solvent and a solvent to the solder powder and mixing. By printing and coating the entire surface of the metal layer adhered to the lid, and then applying this to about 300 to 350
This is done by reflow at a temperature of ° C.

[0006]

However, in this conventional package for housing a semiconductor element, the joining of the sealing material to the metal layer adhered to the lid is performed by applying a solder paste to the entire surface of the metal layer of the lid. It is performed by printing and applying by a screen printing method, and since the thickness is as thick as about 130 μm and at the time of joining, the lid is pressed against the insulating substrate at a constant pressure, etc., so that the lid is placed on the insulating substrate. When the sealing element made of solder is joined by heating and melting, and the semiconductor element is hermetically sealed inside the container made of the insulating base and the lid, a part of the molten solder is made up of the insulating base and the lid. There is a drawback that the semiconductor element is scattered inside the container and adheres to the semiconductor element housed therein, thereby adversely affecting the operation of the semiconductor element and causing the semiconductor element to malfunction.

[0007]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and an object of the present invention is to provide an electronic device in which a part of a sealing material is hermetically sealed in a container comprising an insulating base and a lid. It is an object of the present invention to provide an electronic component storage package that can effectively prevent the electronic components from scattering and adhering to the electronic components, thereby enabling the electronic components to operate normally and stably for a long period of time.

[0008]

The present invention comprises an insulating base and a lid, and joins a metal layer adhered to the insulating base and a metal layer adhered to the lid via a sealing material. An electronic component storage package adapted to hermetically store electronic components therein, wherein at least one of the insulating base and the metal layer attached to the lid has a thickness of 20 to 80 μm. It is characterized in that a stopper is applied.

[0009]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 is a cross-sectional view showing a semiconductor element housing package for housing a semiconductor element as an electronic component housing package of the present invention, wherein 1 is an insulating base made of an electrically insulating material, and 2 is an electrically insulating material. The lid is made of The insulating base 1 and the lid 2 constitute a container 3 for housing the semiconductor element 4.

The insulating substrate 1 has a stepped recess 1a in the center of the upper surface thereof to form a space for accommodating the semiconductor element 4.
The semiconductor element 4 is attached to the bottom surface of the concave portion 1a via an adhesive such as an epoxy resin.

A metallized wiring layer 5 is formed on the insulating base 1 from the stepped periphery of the concave portion 1a to the outside of the container 3, and the electrode of the semiconductor element 4 is formed on the stepped peripheral portion of the metallized wiring layer 5. An external lead terminal 7 electrically connected via a bonding wire 6 and connected to an external electric circuit is attached via a brazing material 8 such as silver brazing to a portion led out of the container 3.

[0012] The insulating substrate 1 is made of, for example, electrically insulating material alumina ceramics, alumina (Al ₂ O
₃ ), silica (SiO ₂ ), calcia (CaO), magnesia
An appropriate organic solvent and a solvent are added to the raw material powder such as (MgO) and mixed to form a slurry, which is formed into a sheet-like ceramic green sheet by employing a conventionally known doctor blade method or calendar roll method. Thereafter, the ceramic green sheet is manufactured by subjecting the ceramic green sheet to appropriate punching, laminating a plurality of sheets, and firing at a high temperature (about 1600 ° C.).

The metallized wiring layer 5 is made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like. A metal paste obtained by adding an appropriate organic solvent and a solvent to the high melting point metal powder is mixed with a conventionally known screen. By applying a thick film method such as a printing method to a ceramic green sheet serving as the insulating substrate 1 in a predetermined pattern in advance, a coating is formed so as to be led out of the container 3 from the vicinity of the concave portion 1a of the insulating substrate 1 to the outside. Is done.

The metallized wiring layer 5 is formed by plating a metal having good conductivity and excellent corrosion resistance such as nickel and gold on the outer surface thereof to a thickness of 1.0 to 20.0 μm by plating. Oxidation and corrosion of the wiring layer 5 can be effectively prevented, and the connection between the metallized wiring layer 5 and the bonding wire 6 and the brazing between the metallized wiring layer 5 and the external lead terminals 7 become extremely strong. Therefore, oxidation corrosion of the metallized wiring layer 5 is prevented,
In order to make the connection between the metallized wiring layer 5 and the bonding wire 6 and the brazing between the metallized wiring layer 5 and the external lead terminals 7 firm, the exposed outer surface of the metallized wiring layer 5 is coated with nickel, gold or the like 1.0 to 20.0. It is preferable to coat the layer to a thickness of μm.

The external lead terminals 7 brazed to the metallized wiring layer 5 serve to connect the semiconductor element 4 housed therein to an external electric circuit.
Is connected to an external electric circuit, so that the semiconductor element 4 accommodated therein is electrically connected to the external electric circuit via the metallized wiring layer 5 and the external lead terminals 7.

The external lead terminal 7 is made of Kovar metal or 42
It is made of a metal such as an alloy, and is formed into a predetermined plate shape by employing a conventionally known metal working method such as a rolling method or a punching method for an ingot (a lump) such as Kovar metal.

The external lead terminal 7 is preferably formed by plating a metal having good conductivity and excellent corrosion resistance made of nickel, gold or the like on the outer surface thereof to a thickness of 1.0 to 20.0 μm by plating. Oxidative corrosion of the external lead terminal 7 can be effectively prevented, and good electrical connection between the external lead terminal 7 and an external electric circuit can be achieved. Therefore, the external lead terminals 7 are plated with nickel, gold, etc.
It is preferable to coat the layer to a thickness of 1.0 to 20.0 μm.

On the upper surface of the insulating base 1, a ring-shaped metal layer 9 is adhered, and a lid 2 is bonded to the metal layer 9 via a sealing material A. Then, the semiconductor element 4 is hermetically sealed.

A metal layer adhered on the upper surface of the insulating substrate 1
9 is made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like, and an organic solvent and a solvent obtained by adding and mixing the high melting point metal powder to the insulating base 1
The ceramic green sheet is printed and applied by adopting a conventionally known screen printing method, etc.
The ceramic green sheet is fired at a high temperature,
Is formed on the upper surface of the insulating substrate 1 at the same time.

Incidentally, a layer made of nickel and a layer made of gold are sequentially formed on the surface of the metal layer 9 in order to improve the wettability with the sealing material A.

The lid 2 bonded to the upper surface of the insulating base 1 is made of an electrically insulating material such as alumina ceramics. To the metal layer 9 on the upper surface of the insulating base 1
By joining through the cover A, the lid 2 is joined to the insulating base 1.

The lid 2 is made of, for example, alumina (Al ₂ O
₃ ), silica (SiO ₂ ), calcia (CaO), magnesia
A raw material powder such as (MgO) is charged into a predetermined press mold, pressed at a constant pressure and molded, and then fired at a temperature of about 1500 ° C.

The metal layer 10 attached to the outer peripheral portion of the lower surface of the lid 2 is made of a high melting point metal powder such as tungsten or manganese, or a metal such as silver-palladium. The metal paste obtained by the addition and mixing is printed and applied on the molded article to be the lid 2 by screen printing in advance, or is printed on the lower surface of the lid 2 obtained by firing the molded article by the screen printing method. By applying and baking this, it is attached to the outer peripheral portion of the lower surface of the lid 2.

When the metal layer 10 is formed of silver-palladium containing 70.0 to 95.0% by weight of silver and 5.0 to 30.0% by weight of palladium, the adhesion strength of the metal layer 10 to the cover 2 is increased, and the metal layer 10 is formed. The wettability of the sealing material A with respect to is very good. Therefore, in order to increase the reliability of hermetic sealing of the container 3 composed of the insulating base 1 and the lid 2, the metal layer 10 applied to the lid 2 is made of silver 70.0.
To 95.0% by weight and 5.0 to 30.0% by weight of palladium.

The sealing material A for joining the lid 2 to the upper surface of the insulating base 1 is a low melting point brazing material such as solder, and the metal layer 9 and the lid 2 attached to the upper surface of the insulating base 1 are used. By joining the metal layer 10 adhered to the lower surface of the container 3
It acts to hermetically seal the inside of the device.

The sealing material A is previously bonded to an annular metal layer 10 attached to the lid 2 in order to improve the workability of bonding the insulating base 1 and the lid 2.

A sealing material bonded to the metal layer 10 of the lid 2
A has a thickness T of 20 to 80 μm and is moderately thin, so that when the insulating base 1 and the lid 2 are joined via the sealing material A, all of the sealing material A 1 and lid
As a result, the sealing material A is not scattered inside the container 3 because of being pulled by the metal layers 9 and 10 attached to the container 2, and as a result, a part of the sealing material A This makes it possible to operate the semiconductor element 4 normally and stably for a long period of time.

The sealing material A is formed of a metal layer 10 obtained by adding a metal paste obtained by adding an organic solvent and a solvent to a powder of solder or the like constituting the sealing material A and adhering to the lid 2. A part of the metal layer is printed by a well-known screen printing method and then reflowed at a temperature of about 350 to 400 ° C. for a long time to form a metal layer 10.
By spreading thinly on the entire surface of the metal layer 10 or by placing a foil-shaped solder on the surface of the metal layer 10 adhered to the lid 2 and then reflowing it at a temperature of about 350 to 400 ° C. for a long time. By doing so, it is joined to the surface of the metal layer 10 of the lid 2.

When the thickness of the sealing material A bonded to the metal layer 10 of the lid 2 is less than 20 μm, the absolute amount of the sealing material A decreases and the insulating base 1 and the lid 2 are firmly connected. When the thickness exceeds 80 μm, when the insulating substrate 1 and the lid 2 are joined via the sealing material A, a part of the sealing material A scatters inside the container 3 and this is a semiconductor. element
4 and cause malfunction of the semiconductor element 4. Therefore, the sealing material A bonded to the metal layer 10 of the lid 2
Is specified to have a thickness in the range of 20 to 80 μm.

Thus, according to the package for housing a semiconductor element described above, the semiconductor element 4 is attached to the bottom surface of the concave portion 1a of the insulating base 1 via an adhesive, and each electrode of the semiconductor element 4 is bonded to the metallized wiring layer 5 by a bonding wire. 6 and then electrically connected to the upper surface of the insulating base 1.
With the sealing material A, and the semiconductor element is
4 is hermetically sealed to provide a semiconductor device as a final product.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. A low melting point brazing filler metal is used. In particular, at least one of tin and indium is 1.0 to 10.0% by weight, and silver is 1.0 to 1% by weight.
When an alloy containing 0.0% by weight and the balance of lead is used, the melting temperature of the sealing material A is reduced, and the insulating base 1 and the lid 2 are used.
The metal layer 9 and the metal layer 9 adhered to each other have good wettability and can be firmly joined.

In the above-described embodiment, the sealing material A is previously joined to the metal layer 10 attached to the lid 2, but is previously joined to the metal layer 9 attached to the insulating base 1. Is also good.

Further, in the above embodiment, the semiconductor device housing package for housing a semiconductor element has been described as an example. However, the present invention can be applied to a package for housing another electronic component, for example, a crystal oscillator.

[0034]

According to the electronic component housing package of the present invention, since the sealing material having a thickness of 20 to 80 μm is previously bonded to the insulating substrate or the metal layer attached to the lid, the insulating substrate When the cover and the lid are joined via the sealing material, a part of the sealing material does not scatter into the container including the insulating base and the lid, and as a result, the electronic component accommodated in the container Thus, the electronic component can be operated normally and stably for a long period of time without any part of the sealing material being scattered and attached.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an electronic component housing package of the present invention by taking a semiconductor element housing package for housing a semiconductor element as an example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Container 5 ... Metallized wiring layer 7 ... External lead terminal 9 ... ... Metal layer adhered to insulating substrate 10 ... Metal layer adhered to lid A ... Sealant

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-58-137235 (JP, A) JP-A-1-318250 (JP, A) JP-A 1-215459 (JP, A) (58) Field (Int.Cl. ⁶ , DB name) H01L 23/02 H01L 23/10

Claims (1)

(57) [Claims] An electronic component is internally formed by joining a metal layer adhered to an insulating base and a metal layer adhered to a lid via a sealing material, comprising an insulating substrate and a lid. An electronic component housing package adapted to be housed in an airtight manner, wherein the metal layer applied to the insulating base and the lid is made of silver 70.
To 95% by weight and 5 to 30% by weight of palladium
At least one of the metal layer formed of radium and adhered to the insulating base and the lid has a small amount of tin or indium.
At least one is 1 to 10% by weight, silver is 1 to 10% by weight
% . A package for electronic component storage, wherein a sealing material made of lead and the remainder is made of lead having a thickness of 20 to 80 μm.