JP2967080B1 - Method of manufacturing semiconductor device package - Google Patents

Abstract

An object of the present invention is to solve the above-mentioned problems, and to connect a semiconductor device face-down to a circuit board having a large thermal expansion coefficient or a circuit board having poor flatness (having a large warp or undulation). It is an object of the present invention to provide a semiconductor device package having a high yield, which can reduce connection failures before sealing resin injection and improve connection reliability after sealing resin injection curing, and have a high yield. . A circuit board (2), a semiconductor device (4) mounted face-down on the circuit board (2), and arranged in a gap between the circuit board (2) and the semiconductor device (4), and adhered to the circuit board (2) and the semiconductor device (4). A reinforcing portion 9 made of an insulating resin for maintaining the gap is provided, and the bonding area of the reinforcing portion 9 with the circuit board 2 and the bonding area with the semiconductor device 4 are substantially the same for each reinforcing portion 9. Is less than or equal to the area of a 2.2 mm circle.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to mounting of a semiconductor device when the semiconductor device is mounted face down on a circuit board.
The present invention relates to a method for producing a body .

[0002]

2. Description of the Related Art As electronic devices have become smaller and thinner in recent years, the speed of LSI chips, the degree of integration, and the number of pins have been increased. Packaging technology has advanced. Therefore, LSI
Various shapes and structures have also been proposed for chip packages (Nikkei Electronics 1993 No. 8-2 N
o. 587, “Pushing the Leading Edge in High Density Packaging of LSI Packages”, pp. 93-99 The mounting structure by the face down is one of them.

When connecting a semiconductor device to a circuit board,
A semiconductor device having an electrode structure composed of a vapor deposition film of an adhesion metal or a diffusion preventing metal and a solder layer formed by plating on the electrode pad of the semiconductor device in advance is turned downward (face down) and heated to a high temperature. It is considered that a mounting structure in which solder is fused to a terminal electrode of a circuit board is an effective method because mechanical strength after connection is high and connection can be performed at a time (for example, Industrial Research Council, January 1980).
Published on March 15, Japan Microelectronics Association,
"IC mounting technology").

Hereinafter, an example of the above-mentioned conventional semiconductor device package and its manufacturing method will be described with reference to the drawings.

FIG. 21 is a schematic sectional view of a conventional semiconductor device mounted face-down. FIG.
2 to 25 are schematic cross-sectional views in each manufacturing process of a conventional semiconductor device package.

In FIGS. 21 to 25, reference numeral 1 denotes a terminal electrode,
2 is a circuit board, 4 is a semiconductor device, 5 is a protruding electrode 6 is a sealing resin, 7 is a filler in the sealing resin, 8 is an electrode pad,
11 is a solder joint, 12 is a passivation film, 13 is a diffusion preventing metal film, and 14 is an adhesion metal film.

FIGS. 22, 23 and 2 show a conventional face-down mounted semiconductor device mounted as described above and a method of manufacturing the same.
The outline will be described in the order of 4, FIG.

FIG. 22 is a schematic sectional view showing a step of forming a bump electrode. First, C on the electrode pad 8 of the semiconductor device 4
A diffusion preventing metal film 13 such as r and an adhesion metal film 14 such as Cu are formed by vapor deposition. Thereafter, the portions other than the electrode portions are covered with a photoresist, and a solder having a thickness of several μm to several tens μm is deposited on the adhesion metal film 14 by a plating method to form the bump electrodes 5. Further, a spherical protruding electrode can be formed by reflow soldering.

FIG. 23 is a schematic sectional view showing a mounting step. The semiconductor device having the protruding electrode 5 formed in FIG. 22 is positioned face down on the circuit board 2 at a predetermined position of the terminal electrode 1 and placed.

FIG. 24 is a schematic sectional view showing a connecting step. The electrode pads 8 of the semiconductor device 4 are soldered to the terminal electrodes 1 of the circuit board 2 by heating to a high temperature of 200 to 300 ° C. to melt the protruding electrodes 5 and to fuse them to the terminal electrodes 1 on the circuit board 2. They are electrically connected via the joint 11.

FIG. 25 is a schematic sectional view showing a sealing resin filling step. By filling and covering the gap between the semiconductor device 4 and the circuit board 2 and the periphery with an insulating sealing resin 6, FIG.
A package of a semiconductor device such as the one described above is obtained.

Recently, a mounting body has been devised in which an Au bump electrode formed on an electrode pad of a semiconductor device is connected to a terminal electrode of a circuit board via a conductive adhesive.

[0013]

However, in the above-described semiconductor device package and its manufacturing method,
It has the following problems.

First, the first problem is that a circuit board having a large coefficient of thermal expansion or a circuit board having a small thickness is used because the solder is heated to a high temperature to melt the solder and connect to the terminal electrodes.
This means that the circuit board is deformed at a high temperature, causing warpage or undulation, and when returning to room temperature, distortion (stress) is generated at the joint.

Next, the second problem is that since the connection is made by soldering, a long-term high temperature or thermal cycle (shock) occurs.
Exposure to heat may cause the solder joints to become fatigued and brittle.

As a method for solving the above problem, Japanese Patent Application Laid-Open
9-321082 and JP-A-10-79571
A package of a semiconductor device and a method for manufacturing the same are disclosed in Japanese Patent Application Laid-Open No. H10-260, 1988. FIG. 26 shows the configuration of Japanese Patent Application Laid-Open No. 09-32108.
FIG. 2 is a schematic cross-sectional view of an example of a semiconductor device mounted body described in Japanese Unexamined Patent Application Publication No. 2 (Kokai) No. 2; As shown in FIG. 26, 1 is a terminal electrode, 2 is a circuit board, 3 is a bonding layer, 4 is a semiconductor device, 5 is a bump electrode,
Reference numeral 6 denotes a sealing resin, 7 denotes a filler in the sealing resin, 8 denotes an electrode pad, 9 denotes a reinforcing portion, 10 denotes a filler in the reinforcing portion, 15 denotes a spreading diameter of the reinforcing portion, and 16 denotes a land. Semiconductor device 4
A protruding electrode 5 having a two-step protruding shape is formed on an electrode pad 8 on the element surface. The semiconductor device 4 is mounted face down on the circuit board 2, and the tip of the protruding electrode 5 and the terminal electrode 1 on the circuit board 2 are electrically connected by using the bonding layer 3 made of a conductive adhesive. It is connected to the. In the gap between the semiconductor device 4 and the circuit board 2, a reinforcing portion 9 using an insulating resin is provided. Further, a gap between the semiconductor device 4 and the circuit board 2 and a peripheral portion thereof are filled and covered with an insulating sealing resin 6 to form a mounted body of the semiconductor device.

The mounting body of the present semiconductor device is provided with the reinforcing portion 9 so that the electrical connection between the projecting electrode 5 of the semiconductor device 4 and the terminal electrode 1 of the circuit board 2 is mechanically reinforced. It is intended to solve the above-mentioned problem. However, in the package of the present semiconductor device, there are problems as described below.

FIG. 27 is a schematic plan transparent view of the package of the semiconductor device described above. As shown in FIG. 27, 1 is a terminal electrode, 2 is a circuit board, 4 is a semiconductor device, 6 is a sealing resin,
9 is a reinforcing portion, 15 is a spreading diameter of the reinforcing portion, 17 is a connecting portion,
Reference numeral 18 denotes a via portion, and reference numeral 22 denotes a void. The semiconductor device 4 is mounted face-down on the circuit board 2 and is electrically connected at a connection portion 17 (corresponding to the portion of the bonding layer 3 in FIG. 26). Further, a reinforcing portion 9 using an insulating resin is provided in a gap between the semiconductor device 4 and the circuit board 2. Further, a gap between the semiconductor device 4 and the circuit board 2 and a peripheral portion thereof are filled and covered with an insulating sealing resin 6 to obtain a package of the semiconductor device. But,
In this case, it has been confirmed that when the semiconductor device 4 is mounted face-down on the circuit board 2, the voids 22 are likely to be generated due to the entrapment in the reinforcing portion 9. The entrained void 22 is formed by the pressure when the semiconductor device 4 is mounted.
Spread around. Further, since the reinforcing portion 9 includes the void 22, the connection before the injection of the sealing resin 6 is unstable. In addition, even when the sealing resin 6 is injected, the voids 22 due to the entrainment in the reinforcing portion 9 are generated on the downstream side of the reinforcing portion 9 with respect to the sealing resin enclosing direction, and after the sealing resin 6 is cured. This lowers connection reliability and promotes variations in the performance of the mounting body. Therefore, in order to obtain a package that satisfies the predetermined performance, it is necessary to strengthen the quality control process, and the yield as a product is deteriorated.
As a result, the manufacturing cost has been increased.

The present invention has been made in consideration of the above-mentioned problems of a conventional semiconductor device package and a method of manufacturing the same, and in consideration of a circuit board having a large coefficient of thermal expansion, a circuit board having a small thickness, or poor flatness (warpage or undulation). When connecting the semiconductor device to the circuit board face down, it is possible to reduce the connection failure before the injection of the sealing resin and to improve the connection reliability after the injection and curing of the sealing resin. It is an object of the present invention to provide a method of manufacturing a package of a semiconductor device having high reliability.

[0020]

In order to solve the above-mentioned problems, in the case where a reinforcing portion using an insulating resin is provided, when the semiconductor device is mounted face down on a circuit board, the inside of the reinforcing portion is Is to prevent voids from being generated. Factors affecting voiding (eg,
As a result of repeated studies on the temperature and adhesiveness of the insulating resin, the bonding area of the reinforcing portion to the circuit board and the bonding area of the reinforcing portion to the semiconductor device are factors that influence the generation of voids. It was confirmed that voids were not generated when the area was smaller than a predetermined area (area of a circle having a diameter of 2.2 mm).

That is, in order to solve the above problems,
According to a first aspect of the present invention (corresponding to the first aspect of the present invention), in a method of manufacturing a semiconductor device package in which a semiconductor device is mounted face down on a circuit board, the circuit board is flattened.
A circuit board holding step of holding , a reinforcing section forming step of forming at least one reinforcing section made of an insulating resin on at least one of the circuit board and the semiconductor device, and a step of forming the reinforcing section. After the alignment, mounting is performed on the circuit board, and the semiconductor device and the circuit board are temporarily bonded and held by the reinforcing portion. After the temporary fixing step, the insulating resin of the reinforcing portion is cured. In the reinforcing step, simultaneously with or after the temporary fixing step or the reinforcing step, a connecting step of electrically connecting an electrode pad of the semiconductor device and a terminal electrode of the circuit board, and the circuit board holding step. Flat
Circuit board holding to release holding of the held circuit board
Releasing step , wherein in the reinforcing part forming step, the bonding area of the reinforcing part with the circuit board and the bonding area with the semiconductor device after the reinforcing step are substantially equal to one part of the reinforcing part. Forming the reinforcing portion so that the area is equal to or smaller than the area of a circle having a diameter of 2.2 mm.

According to a second aspect of the present invention (corresponding to the second aspect of the present invention), a projecting electrode forming step of forming a projecting electrode on an electrode pad of the semiconductor device or on a terminal electrode of the circuit board; A bonding layer forming step of forming a bonding layer near the tip of the bump electrode after the bump electrode forming step; and a bonding layer hardening step of hardening the bonding layer at the same time as the reinforcing step, including before the temporary fixing step. The connecting step includes a step of electrically connecting an electrode pad of the semiconductor device and a terminal electrode of the circuit board via the bump electrode and the bonding layer simultaneously with the temporary fixing step. A first aspect of the present invention is a method for manufacturing a semiconductor device package according to the present invention.

According to a third aspect of the present invention (corresponding to the third aspect of the present invention), the step of forming a protruding electrode on an electrode pad of the semiconductor device or on a terminal electrode of the circuit board is performed by the provisional method. Including before the stopping step, the connecting step is to heat the semiconductor device or the circuit board at the same time as the reinforcing step to melt the protruding electrodes,
Through the projection electrodes, a first method of producing the mounting of the semiconductor device of the present invention, characterized in that the terminal electrodes of the circuit board and the electrode pads of the semiconductor device is a step of electrically connecting is there.

According to a fourth aspect of the present invention (corresponding to the fourth aspect of the present invention), the curing reaction starting temperature of the insulating resin is equal to or lower than the curing temperature of the bonding layer. A first method of manufacturing a semiconductor device package according to the present invention, wherein the curing time of the conductive resin is shorter than the curing time of the bonding layer.

A fifth aspect of the present invention (corresponding to the fifth aspect of the present invention) is characterized in that the insulating resin has a curing shrinkage force larger than that of the bonding layer. A method for manufacturing a semiconductor device package according to the second or fourth aspect of the present invention.

According to a sixth aspect of the present invention (corresponding to the sixth aspect of the present invention), after the connecting step, an insulating sealing resin is injected into a gap between the semiconductor device and the circuit board and a peripheral portion. , Filling and coating, after the sealing resin filling step of curing the sealing resin, the curing of the insulating resin in the reinforcing step is at least the curing of the sealing resin in the sealing resin filling step The method of manufacturing a semiconductor device package according to any one of the first to fifth aspects of the present invention, wherein the method is completed before the completion of the method.

[0044] (corresponding to the invention of claim 7) Seventh invention is the sixth book of the elastic modulus of the insulating resin, wherein the or less elastic modulus of the sealing resin 4 is a method for manufacturing a package of a semiconductor device according to the present invention.

An eighth aspect of the present invention (corresponding to the eighth aspect of the present invention) is a semiconductor device package manufactured by any one of the first to seventh manufacturing methods.

In any one of the first to eighth inventions, the viscosity of the insulating resin before curing is 35 Pa · s.
A method for manufacturing a semiconductor device package characterized by the above is also possible.

[0046]

Embodiments of the present invention will be described below with reference to the drawings.

First, a method of manufacturing a semiconductor device package of the present invention
Before explaining the method, about the mounting body of various semiconductor devices
explain. Hereinafter, the overall structure of the semiconductor device package will be described with reference to FIGS. FIG. 6 is a cross-sectional view of a multi-chip module in which a plurality of semiconductor devices 4 are mounted on a multi-layer circuit board 2. FIG.
FIG. 3 is a cross-sectional view of a device (chip scale (size) package) on which a semiconductor device 4 is mounted alone. FIG.
The mounting body is a semiconductor device in which a plurality of semiconductor devices 4 are mounted on a multilayer circuit board 2 in a face-down manner. The gap between the semiconductor device 4 and the multilayer circuit board 2 and the peripheral portion are filled and sealed with a sealing resin 6. In the mounted body of FIG. 7, the single semiconductor device 4 is
Implemented above. The gap between the semiconductor device 4 and the circuit board 2 and the peripheral portion are filled and sealed with a sealing resin 6.

[0048] you described in the following implementation of the semi-conductor device, the implementation of FIG. 6 is applicable to the mounting member both 7, for convenience, an example implementation of FIG. 7, the illustration or the like .

[0049] (First Example) First, a first embodiment of the present invention with reference to the drawings.

FIG. 1 is a schematic sectional view of a semiconductor device package according to the first embodiment of the present invention. As shown in FIG.
1 is a terminal electrode, 2 is a circuit board, 3 is a bonding layer, 4 is a semiconductor device, 5 is a protruding electrode, 6 is a sealing resin, 7 is a filler in the sealing resin, 8 is an electrode pad, 9 is a reinforcing portion, Reference numeral 10 denotes a filler in the reinforcing portion, 15 denotes a spread diameter of the reinforcing portion, and 16 denotes a land.

Electrode pad 8 on element surface of semiconductor device 4
A protruding electrode 5 having a two-step protruding shape is formed thereon. The semiconductor device 4 is mounted face down on the circuit board 2, and the tip of the protruding electrode 5 and the terminal electrode 1 on the circuit board 2 are mounted.
Are electrically connected via a bonding layer 3 made of a conductive adhesive. In the gap between the semiconductor device 4 and the circuit board 2, a reinforcing portion 9 using an insulating resin is provided. Further, the gap between the semiconductor device 4 and the circuit board 2 and the peripheral portion are filled and covered with an insulating sealing resin 6.
The bonding surface between the reinforcing portion 9 and the semiconductor device 4 or the circuit board 2 has a substantially circular shape, and is adjusted so that its diameter, that is, the spread diameter 15 is 2.2 mm or less.

As described above, in the present embodiment , one reinforcing portion 9 made of an insulating resin having a diameter of the bonding area, that is, a spreading diameter 15 of 2.2 mm or less is provided in the gap between the semiconductor device 4 and the circuit board 2. With the above arrangement, when the semiconductor device 4 is mounted on the circuit board 2, voids do not occur in the reinforcing portion 9, and accordingly, the semiconductor device 4 and the circuit board 2
Are temporarily fixed stably, so that the bonding layer 3 and the sealing resin 6
Suppresses warpage and undulation of the circuit board 2 during curing of
Distortion (stress) applied to the joint can be reduced, thereby reducing connection failure before injecting the sealing resin 6 and increasing the yield of non-defective products. further,
Even at the time of injecting the sealing resin 6, it is possible to suppress the generation of voids due to the entanglement in the reinforcing portion 9 and to improve the connection reliability after the sealing resin 6 is cured.

In FIG. 1, as the material of the protruding electrode 5, silver, copper, nickel, alloy, etc. can be used in addition to gold. The shape of the projection electrode 5 is desirably a two-step projection shape.
Mushroom type may be used.

The bonding layer 3 is made of a conductive adhesive,
The material of the conductive adhesive is not particularly limited as long as it has thermoplasticity or is added, such as epoxy, polyallyl ether, polyamide, polyester, and polyimide. Desirably, the resin used for the bonding layer 3 is a solvent-type thermoplastic resin.

As the material of the conductive powder contained in the conductive adhesive, any material may be used as long as it is generally used. For example, noble metal powder such as silver, gold, palladium, etc .; Alloy powders such as solder and silver palladium,
Composite powders such as silver-plated copper powders and conductive base metal powders such as carbon can be used. These conductive powders can be used alone or in combination of two or more.
The particle size and shape of these conductive powders are not particularly limited.

The insulating resin of the reinforcing portion 9 may be any resin such as a syringe nozzle that can supply potting. As the material of the reinforcing portion 9, an epoxy resin-based thermosetting resin, a thermoplastic resin, a photocurable resin, or a composite resin of any of these can be used. In particular, it is flexible, insulating and has low thermal expansion, such as a mixed resin obtained by adding a thermoplastic resin or an elastomer (elastic) component to a thermosetting resin, or a rubber- or silicone-modified thermosetting resin. And a material having a small elastic modulus is desirable. The filler contained in the reinforcing portion 9 is desirably an insulating material such as silica which has low thermal expansion. The particle size is desirably a fine powder of 10 μm or less so that a small amount can be applied from a syringe nozzle or the like. The filling amount is determined in consideration of the coefficient of thermal expansion of the sealing resin 6.
In this example, the thermal expansion coefficient of the reinforcing portion 9 and the sealing resin 6 is usually adjusted to about 30 ppm.

Further, by using an insulating resin of the reinforcing portion 9 having a viscosity before hardening of 35 Pa · s or more,
It is possible to easily form the reinforcing portion 9 having the spreading diameter 15 of 2.2 mm or less.

The sealing resin 6 is formed in the gap between the semiconductor device 4 and the circuit board 2 and in the peripheral portion so as to include the bonding layer 3 and the reinforcing portion 9. Although the area of the semiconductor device 4 is smaller than that of the circuit board 2 in FIG.
It may be smaller than that. Since the sealing resin 6 is quickly injected into the gap between the semiconductor device 4 and the circuit board even at a low temperature of about room temperature, it is desirable that the sealing resin 6 be of a low viscosity and a low thixotropy index or dilatancy type at room temperature (for example, 1).
0 Pa · s / 50 rpm or less). The material of the sealing resin 6 is
Any material may be used as long as it is generally used. For example, a mixture of a cresol novolak type epoxy resin and a novolak type phenol resin and a filler, or a polyepoxide (usually an epoxy resin or an epoxy compound) and an acid anhydride resin (methyl Tetrahydrophthalic anhydride,
There is a mixture of a cycloaliphatic compound such as methyl hexahydrophthalic anhydride) and a filler. The filler in the sealing resin 6 may be a powder having a particle diameter of 50 μm or less, but may be an oxide compound such as silica or alumina, a nitride compound such as aluminum nitride, a silicon carbide-based carbide compound, or a silicide compound. For example, those having thermal stability and a low coefficient of thermal expansion are desirable.

In FIG. 1, the cross-sectional shape of the reinforcing portion 9 is a continuous shape, but may be a drum shape.

In the combination of the semiconductor device 4 and the circuit board 2 made of resin, the diameter of the reinforcing portion 9, that is, the spread diameter 15, is normally controlled to be applied within a range of 0.5 mm or more and 1.5 mm or less.

The dimension of the gap between the semiconductor device 4 and the circuit board 2 is in a range of 65 mm to 80 mm, which is a standard value of a general semiconductor device mounting body.

[0062] (Second Example) Next, a second embodiment of the present invention with reference to the drawings. Book
The example differs from the first example described above in that the protruding electrode of the present invention is provided on the circuit board side.
Therefore, in this example , the same components as those in the first example are denoted by the same reference numerals, and description thereof will be omitted. Unless otherwise described, the same as in the first example is used.

[0063] Figure 2 is a schematic cross-sectional view of the mounting of the semiconductor device in the second example of the present invention. As shown in FIG.
1 is a terminal electrode, 2 is a circuit board, 3 is a bonding layer, 4 is a semiconductor device, 5 is a protruding electrode, 6 is a sealing resin, 7 is a filler in the sealing resin, 8 is an electrode pad, 9 is a reinforcing portion, Reference numeral 10 denotes a filler in the reinforcing portion, 15 denotes a spread diameter of the reinforcing portion, and 16 denotes a land.

In the semiconductor device package of this embodiment , the protruding electrodes 5 are formed on the terminal electrodes 1 of the circuit board 2. Further, the protruding electrode 5 formed on the terminal electrode 1 of the circuit board 2 may have a two-step protruding shape. The material of the protruding electrode 5 may be any conductive material such as copper, silver and gold.

As described above, in this example , one reinforcing portion 9 made of an insulating resin having a diameter of the bonding area, that is, a spreading diameter 15 of 2.2 mm or less is provided in the gap between the semiconductor device 4 and the circuit board 2. With the above arrangement, when the circuit board 2 is mounted on the semiconductor device 4, no void occurs in the reinforcing portion 9, thereby obtaining the same effect as in the first example described above.

[0066] (Third Example) Next, a third embodiment of the present invention with reference to the drawings. This example differs from the first example described above in that the protruding electrode of the present invention is a solder joint. Therefore, in this example , the same components as those in the first example are denoted by the same reference numerals, and description thereof will be omitted. Unless otherwise described, the same as in the first example is used.

[0067] Figure 3 is a schematic cross-sectional view of the mounting of the semiconductor device in the third embodiment of the present invention. As shown in FIG.
1 is a terminal electrode, 2 is a circuit board, 4 is a semiconductor device, 6 is a sealing resin, 7 is a filler in the sealing resin, 8 is an electrode pad,
9 is a reinforcing portion, 10 is a filler in the reinforcing portion, 11 is a solder joint portion, 12 is a passivation film, 13 is a diffusion preventing metal film, 14 is an adhesion metal film, 15 is a spreading diameter of the reinforcing portion, 16
Is a land.

In the semiconductor device package of this embodiment, a diffusion preventing metal film 13 such as Cr and an adhesion metal film 14 such as Cu are formed on the electrode pads 8 on the element surface of the semiconductor device 4. The contact metal film 14 and the terminal electrode 1 of the circuit board 2 are electrically connected by the solder joint 11.

As described above, in this example , one reinforcing portion 9 made of an insulating resin having a diameter of the bonding area, that is, a spread diameter 15 of 2.2 mm or less is provided in the gap between the semiconductor device 4 and the circuit board 2. With the above arrangement, when the circuit board 2 is mounted on the semiconductor device 4, no void occurs in the reinforcing portion 9, thereby obtaining the same effect as in the first example described above.

[0070] (Fourth embodiment) Next, a fourth embodiment of the present invention with reference to the drawings. Book
Example differs from the first example described above is regarding the planar arrangement of the reinforcement portion of the present invention have been identified.
Therefore, in this example , the same components as those in the first example are denoted by the same reference numerals, and description thereof will be omitted. Unless otherwise described, the same as in the first example is used.

[0071] FIG. 4 is a transmissive plan view, in schematic of the implementation of the semiconductor device in a fourth embodiment of the present invention. As shown in FIG. 4, 1 is a terminal electrode, 2 is a circuit board, 4 is a semiconductor device, 6
Is a sealing resin, 9 is a reinforcing portion, 17 is a connecting portion, 18 is a via portion, and 19 is a conductor pattern.

In the semiconductor device package of this embodiment , the conductor pattern 19 is formed on the inner layer or the surface layer of the circuit board 2. The conductor pattern 19 is generally made of copper, and has a large thermal expansion coefficient of about 17 ppm. A reinforcing portion 9 is formed on the conductor pattern 19 in a gap between the semiconductor device 4 and the circuit board 2.
Are formed. The reinforcing portion 9 is located within the element surface of the semiconductor device 4 and when the reinforcing portion 9 is not provided.
The semiconductor device 4 is arranged at a position where distortion or stress is expected to increase.

As described above, in this example , the reinforcing portions 9
Are arranged in a position where the distortion or stress of the semiconductor device 4 is expected to increase in the element plane of the semiconductor device 4 and when the reinforcing portion 9 is not provided, so that the semiconductor device 4 and the circuit board The reinforcing part 9 can absorb and alleviate strain damage caused to the connecting part 17 due to a difference in thermal expansion coefficient between the sealing resin 6 and the sealing resin 6, thereby reducing connection failure before injecting the sealing resin 6 and increasing the yield of non-defective products. Can be. In addition, even after the sealing resin 6 is injected and cured, the connection reliability can be improved.

The semiconductor device mounted body in this example has been described as following the semiconductor device mounted body in the first example except for the above description. However, the present invention is not limited to this. It may follow the package of the semiconductor device in the second or third example .

[0075] (Fifth embodiment) Next, a description will be given of a fifth embodiment of the present invention with reference to the drawings. Book
Example differs from the first example described above is regarding the planar arrangement of the reinforcement portion of the present invention have been identified.
Therefore, in this example , the same components as those in the first example are denoted by the same reference numerals, and description thereof will be omitted. Unless otherwise described, the same as in the first example is used.

[0076] Figure 5 is a schematic plan transparent view of the mounting of the semiconductor device in a fifth embodiment of the present invention. As shown in FIG. 5, 1 is a terminal electrode, 2 is a circuit board, 4 is a semiconductor device, 6
Is a sealing resin, 9 is a reinforcing portion, 17 is a connecting portion, and 18 is a via portion.

As shown in FIG. 5A, in the mounted body of the semiconductor device according to the present embodiment , as shown in FIG. Are equally arranged at the same distance from the center.

As described above, in the present embodiment , the reinforcing portions 9 are evenly formed in the element plane of the semiconductor device 4 and at the four corners at the same distance from the center, so that the semiconductor device 4 and the circuit board 2 are formed. The reinforcing part 9 can absorb and alleviate the strain damage caused to the connecting part 17 due to the difference in thermal expansion coefficient between the sealing part 6 and the reinforcing part 9, thereby reducing the connection failure before injecting the sealing resin 6 and increasing the yield of non-defective products. it can.
In addition, even after the sealing resin 6 is injected and cured, the connection reliability can be improved.

The planar arrangement of the reinforcing portions 9 is shown in FIG.
The structure is not limited to that shown in FIG. 5A. As shown in FIG. 5B, reinforcing portions 9 are provided at four corners surrounded by terminal electrodes 1 in the element surface of the semiconductor device 4. May be evenly arranged at the same distance from each other. In short, if the reinforcing portion is disposed at least at a corner in the element surface of the semiconductor device, the same effect as the above-described effect can be obtained although the degree is different.

[0080] Also, mounting of the semiconductor device in this embodiment, other than those described above has been described as to follow the implementation of the semiconductor device those of the first embodiment, the present invention is not limited to this, for example, It may follow the package of the semiconductor device in the second or third example .

[0081] (Example of Sixth) Next, a description will be given of a sixth embodiment of the present invention with reference to the drawings. Book
Example differs from the first example described above is regarding the material of the reinforcement portion of the present invention. Therefore, in this example , the same components as those in the first example are denoted by the same reference numerals, and description thereof will be omitted. Unless otherwise described, the same as in the first example is used.

The structure of the semiconductor device package according to the present embodiment other than the material of the reinforcing portion is the same as the semiconductor device package according to the first example , and therefore will be described with reference to FIG.

The insulating resin of the reinforcing portion 9 has a curing reaction initiation temperature equal to or lower than the curing temperature of the bonding layer 3.
In addition, the curing time of the insulating resin of the reinforcing portion 9 is shorter than the curing time of the bonding layer 3. As described above, in this example , the curing reaction starting temperature of the insulating resin of the reinforcing portion 9 is equal to or lower than the curing temperature of the bonding layer, and the reinforcing portion 9 is hardened.
By making the curing time of the insulating resin shorter than the curing time of the bonding layer 3, the reinforcing portion 9 can be cured at the same temperature as the bonding layer, and mechanical reinforcement can be performed in a short time.
Thus, in addition to the effects of the first example , the sealing resin 6
It is possible to reduce the connection failure before the injection, increase the yield of non-defective products, and improve the productivity. In addition, the semiconductor device 4 and the circuit board 2 can be stably temporarily fixed at a low temperature by performing processing at the curing temperature of the insulating resin of the reinforcing portion 9, and the bonding layer can be electrically connected and inspected.

In manufacturing the semiconductor device package of this embodiment , the standard curing condition of the conductive adhesive of the bonding layer 3 is 120.
° C × 2 h, and the curing reaction starting temperature of the reinforcing portion 9 is 110
１１５115 ° C. The hardening time of the insulating resin of the reinforcing portion 9 is 1 hour or less.

Although the package of the semiconductor device in this example is described as following the package of the semiconductor device in the first example except for the above description, the present invention is not limited to this. It may follow any of the semiconductor device mounting bodies in the second to fifth examples .

[0086] (Examples of Seventh) Next, a description will be given of a seventh embodiment of the present invention with reference to the drawings. Book
Example differs from the first example described above is regarding the material of the reinforcement portion of the present invention. Therefore, in this example , the same components as those in the first example are denoted by the same reference numerals, and description thereof will be omitted. The present particularly for those without Description
The implementation of the semiconductor device in the example, configurations other than the material of the reinforcing portion is the same as mounting of the semiconductor device in the first example will be described with reference to FIG.

The elasticity of the insulating resin of the reinforcing portion 9 is equal to or smaller than the elasticity of the sealing resin 6.

As described above, in this example , the reinforcing portions 9
Since the elastic modulus of the insulating resin is equal to or smaller than the elastic modulus of the sealing resin 6, the reinforcing portion 9 in the gap between the semiconductor device 4 and the circuit board 2 is formed by the curing shrinkage force of the sealing resin 6. The connection state between the metal layer and the bonding layer 3 is more stably adhered and fixed, so that distortion (stress) applied to the bonding portion can be reduced. Thereby, in addition to the effects of the first example, it is possible to improve the connection reliability after the sealing resin 6 is cured.

The elastic modulus of the sealing resin 6 used in this example is about 10 GPa, for example, in a general case.

[0090] Incidentally, mounting of the semiconductor device in this embodiment, other than those described above has been described as to follow the implementation of the semiconductor device those of the first embodiment, the present invention is not limited to this, for example, It may follow any of the semiconductor device mounting bodies in the second to sixth examples .

[0091] (eighth example) Next, a description will be given of an eighth embodiment of the present invention with reference to the drawings. Book
Example differs from the first example described above is regarding the material of the reinforcement portion of the present invention. Therefore, in this example , the same components as those in the first example are denoted by the same reference numerals, and description thereof will be omitted. Unless otherwise described, the same as in the first example is used.

The structure of the semiconductor device package according to the present embodiment is the same as that of the semiconductor device package according to the first example except for the material of the reinforcing portion, and will be described with reference to FIG.

The insulating resin of the reinforcing portion 9 is made of a composite resin containing a rubber component (elastomer).

As described above, in this example , the reinforcing portion 9
Is made of a composite resin containing a rubber component (elastomer), when the semiconductor device 4 and the circuit board 2 are connected and fixed, the elasticity of the rubber component (elastomer) is applied to the joint (distortion). ) Can be alleviated, and the sealing resin 6 can be cured and shrunk when it is cured. Thereby, in addition to the effect of the first example , the semiconductor device 4 and the circuit board 2 can be more closely connected, and the connection reliability of the sealing resin 6 after curing can be improved.

The rubber components (elastomer) used in this example are generally vulcanized rubber and thermoplastic elastomer, and have an elastic modulus of about 10 6 to 7 Pa.

[0096] Incidentally, mounting of the semiconductor device in this embodiment, other than those described above has been described as to follow the implementation of the semiconductor device those of the first embodiment, the present invention is not limited to this, for example, or it may be to follow any mounting of the semiconductor device definitive to the second to seventh example.

[0097] (First Embodiment) Next, a description will be given of a first embodiment of the present invention with reference to the drawings.

FIGS. 8 to 14 are schematic sectional views showing steps of a method of manufacturing a semiconductor device package according to the first embodiment of the present invention. 8 to 14, 1 is a terminal electrode, 2 is a circuit board, 3 is a bonding layer, 4 is a semiconductor device, 5 is a protruding electrode, 6 is a sealing resin, 7 is a filler in the sealing resin,
8 is an electrode pad, 9 is a reinforcing part, 10 is a filler in the reinforcing part, 15 is a spreading diameter, 16 is a land, 20 is an adhesive sheet, and 21 is a substrate fixing jig.

A method of manufacturing a package of a semiconductor device having the above-described structure will be described with reference to FIGS.
The description will be made in the order of FIGS. 9, 10, 11, 12, 13, and 14.

First, FIG. 8 is a schematic sectional view showing the step of forming the protruding electrodes. As shown in FIG. 8, the protruding electrodes 5 are formed on each of the plurality of electrode pads 8 of the semiconductor device 4. At this time, it is preferable that the protruding electrode 5 has a two-step protruding shape or a convex shape, but may be a straight type. The protruding electrode 5 can be formed by a known photoetching method, plating method, or ball bonding method. As a material, nickel, copper, or the like can be used in addition to gold. As shown in FIG. 8, by using a two-step projection-shaped protruding electrode, when a conductive adhesive is used for the bonding layer as shown in FIG. 12, the spreading of the bonding layer in the lateral direction is suppressed. Therefore, the mounting density can be greatly improved. Note that the bump electrodes 5 may be leveled to a predetermined height.

In the present embodiment, the protruding electrode 5 is formed on the electrode pad 8 of the semiconductor device 4. However, the protruding electrode 5 is formed on the terminal electrode 1 of the circuit board 2. Is also good.

FIG. 9 is a schematic sectional view showing a circuit board holding step. An adhesive sheet 20 of a peeling type on a flat substrate fixing jig 21 made of glass, ceramic or SUS.
And a circuit board 2 with a warp or undulation on it
And flatten it. Thereby, the warpage of the portion 10 mm square where the semiconductor device 4 is mounted on the circuit board 2 is suppressed to about 10 μm or less. However, the size of the semiconductor device 4 is 10
Use the one with mm □. The adhesive sheet 20 is mainly composed of epoxy. Further, the warped or undulating circuit board 2 may be flattened by being sandwiched between the flat board fixing jig 21 and the flat board holding jig. The mounting portion of the substrate holding jig on which the semiconductor device 4 is mounted has a window cut out so that the semiconductor device 4 can be mounted.

In the circuit board holding step, the use of the board fixing jig as described above is not limited, and the circuit board 2 is simply suctioned by a flat jig provided with suction holes or grooves. Alternatively, a method of keeping the surface flat may be used.

FIG. 10 is a schematic sectional view showing a connection layer forming step. With the formation side of the bump electrode 5 of the semiconductor device 4 facing downward, the bonding electrode 3 is lowered to the transfer film of the conductive adhesive, and the bump electrode 5 is immersed in the conductive adhesive.
The semiconductor device 4 is pulled up, and the conductive adhesive as the bonding layer 3 is collectively transferred to the vicinity of the tip of each protruding electrode 5.

FIG. 11 is a schematic sectional view showing a reinforcing portion forming step. After the reinforcing step described below, the bonding area of the reinforcing portion 9 with the circuit board 2 and the bonding area with the semiconductor device 4 are substantially 2.2 mm in diameter per one reinforcing portion.
The reinforcing portion 9 made of an insulating resin is formed on the circuit board 2 so as to have the area not more than the area of the circle. The reinforcing portion 9 is formed of a material such as a syringe nozzle capable of supplying potting. By using a nozzle having an inner diameter of 0.33 to 0.19 mm, the reinforcing portion 9 can be easily formed so as to satisfy the condition of the bonding surface.

Further, as the insulating resin for the reinforcing portion 9, one having a viscosity before curing of 35 Pa · s or more is used.
The reinforcing portion 9 can be easily formed so as to satisfy the condition of the bonding surface.

The reinforcing portion 9 may be formed on the semiconductor device 4 side.

The steps in FIGS. 8 and 10 and the steps in FIGS. 9 and 11 are independent steps, and need not always be performed in the order of the figure numbers. In short, it is only necessary that the steps of FIGS. 10 and 11 have been completed before the step shown in FIG.

FIG. 12 is a schematic sectional view showing a temporary fixing step, a connecting step, a reinforcing step, and a bonding layer curing step. After aligning the semiconductor device 4, the semiconductor device 4 is mounted face down on the circuit board 2, and the bump electrodes 5 of the semiconductor device 4 and the terminal electrodes 1 of the circuit board 2 are connected by the bonding layer 3, and the semiconductor device 4 and the circuit board 2 are connected together. After that, hold the temporary adhesive
At the same time as the bonding layer 3 is hardened, the insulating resin of the reinforcing portion 9 is also hardened, and the semiconductor device 4 and the circuit board 2 are reinforced and fixed.
The mounting of the semiconductor device 4 on the circuit board 2 is performed at room temperature. A load of about 1 g per projection electrode when the semiconductor device 4 is mounted on the circuit board 2 is sufficient.

The curing condition of the bonding layer 3 using the conductive adhesive is set to 120 ° C. × 2 hours. The value of the connection resistance value after being cured under these curing conditions is more stable than when the reinforcing portion 9 is not provided, and it is considered that the connection portion is temporarily fixed more stably due to the curing of the reinforcing portion 9. Thereby, the connection failure before the sealing resin is injected can be reduced, and the yield can be increased. In addition, inspection before injection of the sealing resin becomes easy.

Further, the curing may be performed at a temperature higher than the curing temperature of both the reinforcing portion 9 and the bonding layer 3. For example, 150 ° C
× 15 to 20 min. Thereby, the curing time is shortened, and the productivity can be improved.

FIG. 13 is a schematic sectional view showing a sealing resin filling step. After an insulating sealing resin is injected, filled, and covered in the gap between the semiconductor device 4 and the circuit board 2 and in the peripheral portion, the sealing resin 6 is cured. In the present embodiment, for example, a resin substrate is used for the circuit substrate 2 and the injection temperature of the sealing resin 6 is 45 ° C. At this time, the curing condition of the sealing resin 6 is set to 120 ° C. × 2 h + 150 ° C. × 2 h.

FIG. 14 is a schematic sectional view showing a circuit board holding / releasing step. The circuit board 2 held flat is removed. The mounted body of the semiconductor device 4 can be easily removed after the adhesive sheet 20 is heated to about 150 ° C. to soften the adhesive sheet.

As described above, in the present embodiment,
After the reinforcing step, the bonding area of the reinforcing portion 9 with the circuit board 2 and the bonding area with the semiconductor device 4 are substantially equal to or smaller than the area of a circle having a diameter of 2.2 mm per one reinforcing portion. By forming the reinforcing portion 9 using an insulating resin, when the semiconductor device 4 is mounted on the circuit board 2, no void occurs in the reinforcing portion 9 and the semiconductor device 4
And the circuit board 2 are stably temporarily fixed, so that the bonding layer 3
And warping and undulation of the circuit board 2 during curing of the sealing resin 6 can be suppressed, and distortion (stress) applied to the joint portion can be reduced, thereby reducing connection failure before the sealing resin 6 is injected. The yield of non-defective products can be increased. Furthermore, even at the time of injecting the sealing resin 6, it is possible to suppress the generation of voids due to the entanglement in the reinforcing portion 9 and to improve the connection reliability after the sealing resin 6 is cured.

In the combination of the semiconductor device 4 and the circuit board 2 made of resin, the diameter of the reinforcing portion 9, that is, the spread diameter 15, is usually controlled to be in the range of 0.5 mm or more and 1.5 mm or less.

The gap between the semiconductor device 4 and the circuit board 2 is in the range of 65 mm to 80 mm, which is a standard value of a general semiconductor device mounting body.

The method of manufacturing a semiconductor device package according to the present embodiment has been described as including all the steps described above. However, the present invention is not limited to this. What is necessary is just to include the temporary fixing process, the reinforcement process, and the connection process.

[0118] (Second Embodiment) Next, a second embodiment of the present invention with reference to the drawings. This embodiment is different from the above-described first embodiment in that the bump electrode of the present invention is a solder bonding portion and does not include a step related to the bonding layer of the present invention. Therefore, in the present embodiment, the same components as those in the ninth embodiment are denoted by the same reference numerals, and the description is omitted. For items not particularly described, the ninth
It is assumed to be the same as the embodiment.

FIGS. 15 to 20 are schematic sectional views showing steps of a method of manufacturing a semiconductor device package according to the second embodiment of the present invention. 15 to 20, 1 is a terminal electrode, 2 is a circuit board, 4 is a semiconductor device, 5 is a protruding electrode, 6 is a sealing resin, 7 is a filler in the sealing resin, 8 is an electrode pad, and 9 is a reinforcement. Part, 10 is the filler in the reinforcing part, 1
1 is a solder joint, 12 is a passivation film, 13 is a diffusion preventing metal film, 14 is an adhesion metal film, 15 is a spreading diameter, 1
6 is a land, 20 is an adhesive sheet, and 21 is a substrate fixing jig.

A method of manufacturing a package of a semiconductor device configured as described above will be described with reference to FIG.
5, FIG. 16, FIG. 17, FIG. 18, FIG. 19, and FIG.

First, FIG. 15 is a schematic sectional view showing the step of forming the protruding electrodes. Plural electrode pads 8 of semiconductor device 4
A diffusion preventing metal film 13 such as Cr and an adhesion metal film 14 such as Cu are formed thereon by vapor deposition. Thereafter, the portions other than the electrode portions are covered with a photoresist, and the adhesion metal film 1 is formed by plating.
A hemispherical solder protruding electrode 5 is formed by depositing a solder of several μm to several tens of μm on 4 and performing solder reflow.

FIG. 16 is a schematic sectional view showing a circuit board holding step. This step is the same as the circuit board holding step of the ninth embodiment described above.

FIG. 17 is a schematic sectional view showing a reinforcing portion forming step. This process is also the same as the reinforcing portion forming process of the ninth embodiment described above.

FIG. 18 is a schematic sectional view showing a temporary fixing step, a reinforcing step, and a connecting step. After aligning the semiconductor device 4, the semiconductor device 4 is mounted on the circuit board 2, and the semiconductor device 4 or the circuit board 2 is heated to melt the projecting electrode 5, and the projecting electrode 5 of the semiconductor device 4 and the terminal electrode 1 of the circuit board 2 are melted. And at the same time, the insulating resin of the reinforcing portion 9 is also cured, and the semiconductor device 4 and the circuit board 2 are reinforced and fixed.
The melting temperature of the solder protruding electrode is usually 200 to 300 ° C.
Set to.

FIG. 19 is a schematic sectional view showing a sealing resin filling step. This step is the same as the sealing resin filling step of the ninth embodiment described above.

FIG. 20 is a schematic sectional view showing a circuit board holding / releasing step. This step is the same as the circuit board holding / releasing step of the ninth embodiment described above.

As described above, in the present embodiment,
After the reinforcing step, the bonding area of the reinforcing portion 9 with the circuit board 2 and the bonding area with the semiconductor device 4 are substantially equal to or smaller than the area of a circle having a diameter of 2.2 mm per one reinforcing portion. By forming the reinforcing portion 9 using an insulating resin, when the semiconductor device 4 is mounted on the circuit board 2, no void occurs in the reinforcing portion 9 and the semiconductor device 4
And the circuit board 2 are stably temporarily fixed, so that the bonding layer 3
And warping and undulation of the circuit board 2 during curing of the sealing resin 6 can be suppressed, and distortion (stress) applied to the joint portion can be reduced, thereby reducing connection failure before the sealing resin 6 is injected. The yield of non-defective products can be increased. Furthermore, even at the time of injecting the sealing resin 6, it is possible to suppress the generation of voids due to the entanglement in the reinforcing portion 9 and to improve the connection reliability after the sealing resin 6 is cured.

The method of manufacturing a semiconductor device package according to the present embodiment has been described as including all the steps described above. However, the present invention is not limited to this. What is necessary is just to include the temporary fixing process, the reinforcement process, and the connection process.

[0129]

Embodiments of the present invention will be described below.

In Examples 1 to 4 described below, the diameter of the bonding surface of the reinforcing portion manufactured according to the method of manufacturing a semiconductor device package in the first embodiment is 1 to 2.2 m.
Comparative Examples 1 to 3 are mounted bodies of a semiconductor device having a circle of m.
Is a semiconductor device package manufactured according to a similar manufacturing method, in which the diameter of the bonding surface of the reinforcing portion is a circle of 2.7 to 4.8 mm.

That is, according to the steps shown in FIGS. 8 to 14, length 10 mm × width 10 mm × thickness 0.4 m
m semiconductor device 4 face down, 11 mm long ×
It is mounted on a circuit board 2 having a width of 11 mm and a thickness of 0.15 mm. The semiconductor device 4 has 268 projecting electrodes 5, all of which were connected to the terminal electrodes 1 of the circuit board 2. Further, one reinforcing portion 9 was formed at the center position of the circuit board 2. Further, the gap size between the semiconductor device 4 and the circuit board 2 after the completion of the mounting body was set to be 0.075 mm.

FIG. 28 is an enlarged photograph of the semiconductor device package of Example 1 (the diameter of the bonding surface of the reinforcing portion; 1 mm) cut horizontally at the position of the reinforcing portion after completion. In FIG. 28, small circles arranged in a lattice form are vias (via diameter; 0.4 mm) of the circuit board, and are slightly colored from the peripheral part overlapping one of the vias near the center. Is a reinforcing part. The portion other than the reinforcing portion is the filled sealing resin. In this embodiment, no void is observed in the reinforcing portion and the sealing resin.

FIG. 29 is an enlarged photograph of the semiconductor device of Example 2 (the diameter of the bonding surface of the reinforcing portion: 1.6 mm), which was cut horizontally at the position of the reinforcing portion after completion. FIG.
9, the small circles arranged in a lattice form are vias of the circuit board, and a circular part slightly darker than the peripheral part overlapping the two via parts near the center is a reinforcing part. It is. The portion other than the reinforcing portion is the filled sealing resin.
Also in this embodiment, no void is observed in the reinforcing portion and the sealing resin.

FIG. 30 is an enlarged photograph of the semiconductor device package of Example 3 (the diameter of the bonding surface of the reinforcing portion; 1.9 mm) cut horizontally at the position of the reinforcing portion after completion. FIG.
At 0, the small circles arranged in a lattice form are the vias of the circuit board, and the circular part slightly darker than the peripheral part overlapping the four vias near the center is the reinforcing part. It is. The portion other than the reinforcing portion is the filled sealing resin.
Also in this embodiment, no void is observed in the reinforcing portion and the sealing resin.

FIG. 31 is an enlarged photograph of the semiconductor device package of Example 4 (the diameter of the bonding surface of the reinforcing portion; 2.2 mm) cut horizontally at the position of the reinforcing portion after completion. FIG.
In 1, the small circles arranged in a lattice form are the vias of the circuit board, and the circular part which is slightly darker than the periphery and overlaps the nine vias near the center is the reinforcing part. It is. The portion other than the reinforcing portion is the filled sealing resin.
Also in this embodiment, no void is observed in the reinforcing portion and the sealing resin.

FIG. 32 is an enlarged photograph of the semiconductor device package of Comparative Example 1 (the diameter of the bonding surface of the reinforcing portion; 2.7 mm) which was cut horizontally at the position of the reinforcing portion after completion. FIG.
In 2, the small circles arranged in a lattice form are the vias of the circuit board, and the circles, which are slightly darker than the periphery and overlap the eleven vias near the center, are reinforced. Department. The portion other than the reinforcing portion is the filled sealing resin. In this comparative example, generation of voids is observed in the reinforcing portion.

FIG. 33 is an enlarged photograph of the semiconductor device of Comparative Example 2 (the diameter of the bonding surface of the reinforcing portion: 4.8 mm) which was cut horizontally at the position of the reinforcing portion after completion. FIG.
In 3, the small circles arranged in a lattice form are the vias of the circuit board, and the circular part, which is slightly darker than the periphery and overlaps the 28 vias near the center, is reinforced. Department. The portion other than the reinforcing portion is the filled sealing resin. Also in this comparative example, generation of voids is observed in the reinforcing portion.

FIG. 34 and FIG. 35 are enlarged photographs of the semiconductor device package of Comparative Example 3 (the diameter of the bonding surface of the reinforcing portion; 2.8 mm) cut horizontally at the position of the reinforcing portion after completion. 28 is an enlarged view in which the magnification is increased as compared with FIGS. In FIGS. 34 and 35, the small circles arranged in a lattice form are vias of the circuit board, and a part darker in color from the center to the top than the peripheral part is a reinforcing part. The portion other than the reinforcing portion is the filled sealing resin.
In this comparative example, generation of voids is observed not only in the reinforcing portion but also in the sealing resin (the portion adjacent to the reinforcing portion). For comparison, Example 2 (diameter of the bonding surface of the reinforcing portion;
1.6 mm) at the same magnification is shown in FIG.
Even in the case of enlargement, in this embodiment, generation of voids is not recognized in the reinforcing portion and the sealing resin.

As described above, if the bonding area of the reinforcing portion to the circuit board and the bonding area to the semiconductor device are substantially equal to or smaller than the area of a circle having a diameter of 2.2 mm for each of the reinforcing portions, It was confirmed that when the device was mounted on the circuit board, no voids occurred in the reinforcing portion, and even when the sealing resin was injected, the occurrence of voids due to the winding in the reinforcing portion was suppressed.

[0140]

As is apparent from the above description, the present invention relates to a semiconductor device for a circuit board having a large coefficient of thermal expansion, a circuit board having a small thickness, or a circuit board having a poor flatness (a large warp or undulation). When connecting face down, reduce connection failure before sealing resin injection,
In addition, it is possible to improve the connection reliability after the sealing resin is injected and cured, and it is possible to provide a method for manufacturing a semiconductor device package having a high yield. That is, when the semiconductor device is mounted on the circuit board, no void is generated in the reinforcing portion, and thereby the semiconductor device and the circuit board are stably temporarily fixed. It is possible to suppress the warpage and undulation of the circuit board during curing, and reduce the strain (stress) applied to the joint, thereby reducing the connection failure before injecting the sealing resin and increasing the yield of non-defective products. it can. Further, even at the time of injection of the sealing resin, it is possible to suppress the occurrence of voids due to the entanglement in the reinforcing portion and to improve the connection reliability after the sealing resin is cured.

Further, strain (stress) at a portion of the circuit board surface where the coefficient of thermal expansion is large can be reduced and absorbed.

[0142] In addition, relax the strain (stress) according to the 4 corners of the semiconductor device, can be absorbed, more this effect the larger the size of the semiconductor device is increased, connection reliability of the 4 corners of the semiconductor device Performance can be improved.

Further , the reinforcing portion can be cured at the same temperature as the bonding layer and can be cured in a short time.

Further, by making the curing shrinkage force of the insulating resin of the reinforcing portion larger than the curing shrinkage force of the bonding layer, the electrical connection of the bonding layer can be made good and stable, and the semiconductor device can be connected to the circuit board. Can be held mechanically.

[0145] Further, when the insulating resin of the reinforcing portion is injected to cure the sealing resin after the curing, the elastic modulus of the insulating resin of the reinforcing portion is smaller than the elastic modulus of the sealing resin, the distortion (stress ) Can be relaxed and absorbed when it occurs.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a semiconductor device package according to a first example of the present invention.

FIG. 2 is a schematic sectional view of a semiconductor device package according to a second example of the present invention.

FIG. 3 is a schematic sectional view of a semiconductor device package according to a third example of the present invention.

FIG. 4 is a schematic plan transparent view of a semiconductor device package according to a fourth example of the present invention.

FIG. 5 is a schematic plan transparent view of a semiconductor device package according to a fifth example of the present invention.

FIG. 6 is a schematic sectional view of a multi-chip module in which a plurality of semiconductor devices are mounted on a multilayer circuit board.

FIG. 7 is a schematic cross-sectional view of a semiconductor device mounted alone on a circuit board (chip scale package or chip size package).

FIG. 8 is a schematic cross-sectional view showing a bump electrode forming step of the method for manufacturing a semiconductor device package according to the first embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view showing a circuit board holding step of the method for manufacturing a semiconductor device package according to the second embodiment of the present invention.

FIG. 10 is a schematic cross-sectional view showing a connection layer forming step of the method for manufacturing a semiconductor device package according to the first embodiment of the present invention.

FIG. 11 is a schematic cross-sectional view showing a reinforcing portion forming step of the method for manufacturing a semiconductor device package according to the first embodiment of the present invention.

FIG. 12 is a schematic cross-sectional view showing a temporary fixing step, a connecting step, a reinforcing step, and a bonding layer hardening step of the method for manufacturing a semiconductor device package according to the first embodiment of the present invention.

FIG. 13 is a schematic cross-sectional view showing a sealing resin filling step of the method for manufacturing a semiconductor device package according to the first embodiment of the present invention.

FIG. 14 is a schematic cross-sectional view showing a circuit board holding / releasing step of the method for manufacturing a semiconductor device package according to the first embodiment of the present invention.

FIG. 15 is a schematic cross-sectional view showing a bump electrode forming step of the method for manufacturing a semiconductor device package according to the second embodiment of the present invention.

FIG. 16 is a schematic cross-sectional view showing a circuit board holding step of the method for manufacturing a semiconductor device package according to the second embodiment of the present invention.

FIG. 17 is a schematic cross-sectional view showing a reinforcing portion forming step of the method for manufacturing a semiconductor device package according to the second embodiment of the present invention.

FIG. 18 is a schematic cross-sectional view showing a temporary fixing step, a reinforcing step, and a connecting step of the method for manufacturing a semiconductor device package according to the second embodiment of the present invention.

FIG. 19 is a schematic cross-sectional view showing a sealing resin filling step of the method for manufacturing a semiconductor device package according to the second embodiment of the present invention.

FIG. 20 is a schematic sectional view showing a circuit board holding / releasing step of the method for manufacturing a semiconductor device package according to the second embodiment of the present invention;

FIG. 21 is a schematic cross-sectional view of a conventional semiconductor device package having a solder bonding layer.

FIG. 22 is a schematic cross-sectional view showing a bump electrode forming step of a conventional method for manufacturing a semiconductor device having a solder bonding layer.

FIG. 23 is a schematic cross-sectional view showing a mounting step of a conventional method for manufacturing a semiconductor device having a solder bonding layer.

FIG. 24 is a schematic cross-sectional view showing a connection step of a conventional method for manufacturing a semiconductor device having a solder bonding layer.

FIG. 25 is a schematic cross-sectional view showing a sealing resin filling step in a conventional method for manufacturing a semiconductor device having a solder bonding layer.

FIG. 26 is a schematic sectional view of a conventional semiconductor device package having a reinforcing portion.

FIG. 27 is a schematic plan transparent view of a conventional semiconductor device package having a reinforcing portion.

FIG. 28 shows Example 1 of the present invention (the diameter of the bonding surface of the reinforcing portion;
1B is an enlarged photograph of a 1 mm) semiconductor device package cut horizontally at the position of the reinforcing portion after completion, and a halftone image displayed on a display output from a printer, which is a photograph replacing a drawing.

FIG. 29 shows Example 2 of the present invention (the diameter of the bonding surface of the reinforcing portion;
This is an enlarged photograph of a 1.6 mm) semiconductor device package cut horizontally at the position of the reinforcing part after completion, and a halftone image displayed on a display output from a printer, which is a photograph replacing a drawing. is there.

FIG. 30 shows a third embodiment of the present invention (the diameter of the bonding surface of the reinforcing portion;
This is an enlarged photograph of a 1.9 mm) semiconductor device package cut horizontally at the position of the reinforcing portion after completion, and a halftone image displayed on a display output from a printer, which is a photograph replacing a drawing. is there.

FIG. 31 shows a fourth embodiment of the present invention (the diameter of the bonding surface of the reinforcing portion;
2.2 mm) is an enlarged photograph of a semiconductor device mounted horizontally, which is cut horizontally at the position of the reinforcing portion after completion, and a halftone image displayed on a display is output from a printer, and is a photograph replacing a drawing. is there.

FIG. 32 shows Comparative Example 1 of the present invention (the diameter of the bonding surface of the reinforcing portion;
This is an enlarged photograph of a 2.7 mm) semiconductor device package cut horizontally at the position of the reinforcing portion after completion, and a halftone image displayed on a display output from a printer, which is a photograph replacing a drawing. is there.

FIG. 33 shows Comparative Example 2 of the present invention (the diameter of the bonding surface of the reinforcing portion;
This is an enlarged photograph of a 4.8 mm) semiconductor device package cut horizontally at the position of the reinforcing portion after completion, and a halftone image displayed on a display output from a printer, which is a photograph replacing a drawing. is there.

FIG. 34 shows Comparative Example 3 of the present invention (diameter of the bonding surface of the reinforcing portion;
This is a magnified photograph of a 2.8 mm) semiconductor device package cut horizontally at the position of the reinforcing part after completion, and a halftone image displayed on a display output from a printer, which is a photograph replacing a drawing. is there.

FIG. 35 shows Comparative Example 3 of the present invention (the diameter of the bonding surface of the reinforcing portion;
This is a magnified photograph of a 2.8 mm) semiconductor device package cut horizontally at the position of the reinforcing part after completion, and a halftone image displayed on a display output from a printer, which is a photograph replacing a drawing. is there.

FIG. 36 shows Example 2 of the present invention (the diameter of the bonding surface of the reinforcing portion;
This is an enlarged photograph of a 1.6 mm) semiconductor device package cut horizontally at the position of the reinforcing part after completion, and a halftone image displayed on a display output from a printer, which is a photograph replacing a drawing. is there.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Terminal electrode 2 Circuit board 3 Bonding layer 4 Semiconductor device 5 Projection electrode 6 Sealing resin 7 Filler in sealing resin 8 Electrode pad 9 Reinforcement part 10 Filler in reinforcement part 11 Solder joint part 12 Passivation film 13 Diffusion prevention metal film DESCRIPTION OF SYMBOLS 14 Adhesion metal film 15 Spread diameter 16 Land 17 Connection part 18 Via part 19 Conductor pattern 20 Adhesive sheet 21 Board fixing jig 22 Void

Continuation of the front page (72) Inventor Yoshihiro Bessho 1006 Kazuma, Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. (56) References JP-A-9-321082 (JP, A) JP-A-10-79571 (JP) , A) JP-A-9-181122 (JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) H01L 23/29 H01L 21/56 H01L 21/60 311 H01L 23/31

Claims (8)

(57) [Claims] 1. A method of producing the mounting of the semiconductor device mounting a semiconductor device on a circuit board face-down, before
A circuit board holding step of holding the circuit board flat, a reinforcing section forming step of forming at least one reinforcing section made of an insulating resin on at least one of the circuit board and the semiconductor device, and a reinforcing section forming step. After that, the semiconductor device is mounted on the circuit board after being aligned, and a temporary fixing step of bonding and holding the semiconductor device and the circuit board by the reinforcing portion, and after the temporary fixing step, A reinforcing step of curing an insulating resin, and, simultaneously with or after the temporary fixing step or the reinforcing step, a connecting step of electrically connecting an electrode pad of the semiconductor device and a terminal electrode of the circuit board , The circuit board holder
Holding the circuit board held flat in the holding process.
A circuit board holding / releasing step for releasing , wherein in the reinforcing section forming step, the bonding area of the reinforcing section with the circuit board and the bonding area with the semiconductor device after the reinforcing step are reduced at one position of the reinforcing section. Wherein the reinforcing portion is formed so as to have a diameter substantially equal to or less than the area of a circle having a diameter of 2.2 mm. 2. A protruding electrode forming step of forming a protruding electrode on an electrode pad of the semiconductor device or on a terminal electrode of the circuit board, and after the protruding electrode forming step, a bonding layer is formed near a tip of the protruding electrode. The bonding layer forming step to be formed, including before the temporary fixing step, simultaneously with the reinforcing step, includes a bonding layer curing step of curing the bonding layer, the connection step, simultaneously with the temporary fixing step, the 2. The semiconductor device package according to claim 1 , further comprising a step of electrically connecting an electrode pad of the semiconductor device and a terminal electrode of the circuit board via the bump electrode and the bonding layer. Manufacturing method. 3. A step of forming a projecting electrode on the electrode pad of the semiconductor device or on a terminal electrode of the circuit board before the temporary fixing step, wherein the connecting step is performed simultaneously with the reinforcing step. Heating the semiconductor device or the circuit board and melting the projecting electrodes, thereby electrically connecting the electrode pads of the semiconductor device and the terminal electrodes of the circuit board via the projecting electrodes. The method for manufacturing a semiconductor device package according to claim 1 , wherein: 4. The curing reaction starting temperature of the insulating resin is:
Said at most the curing temperature of the bonding layer, and / or, wherein the curing time of the insulating resin, mounting of the semiconductor device according to claim 1, characterized in that less than the curing time of the bonding layer How to make the body. Wherein said insulating resin, a method of producing the mounting of the semiconductor device according to claim 2 or 4, characterized in that the curing shrinkage force is larger than the curing contraction force of the bonding layer . 6. A sealing resin that injects, fills, and covers an insulating sealing resin into a gap between the semiconductor device and the circuit board and a peripheral portion after the connecting step, and then cures the sealing resin. and a filling step, curing of the insulating resin in the reinforcing step, at least, claim 1, characterized in that it is completed before completion of the curing of the sealing resin in the sealing resin filling step 6. The method for manufacturing a package of a semiconductor device according to any one of items 5 to 5 . 7. The method according to claim 6 , wherein an elastic modulus of the insulating resin is equal to or less than an elastic modulus of the sealing resin. 8. The production method according to claim 1,
A package of a semiconductor device manufactured by the method .