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JP2891068B2 - Wafer polishing method and polishing apparatus - Google Patents

Wafer polishing method and polishing apparatus

Info

Publication number
JP2891068B2
JP2891068B2 JP28439393A JP28439393A JP2891068B2 JP 2891068 B2 JP2891068 B2 JP 2891068B2 JP 28439393 A JP28439393 A JP 28439393A JP 28439393 A JP28439393 A JP 28439393A JP 2891068 B2 JP2891068 B2 JP 2891068B2
Authority
JP
Japan
Prior art keywords
wafer
holding plate
polishing
wafer holding
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP28439393A
Other languages
Japanese (ja)
Other versions
JPH07112364A (en
Inventor
好一 田中
浩昌 橋本
文夫 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP28439393A priority Critical patent/JP2891068B2/en
Priority to US08/283,152 priority patent/US5584746A/en
Priority to DE69419479T priority patent/DE69419479T2/en
Priority to EP94306406A priority patent/EP0653270B1/en
Publication of JPH07112364A publication Critical patent/JPH07112364A/en
Application granted granted Critical
Publication of JP2891068B2 publication Critical patent/JP2891068B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明はウエーハの研磨方法およ
び研磨装置に関し、詳しくは、半導体デバイスの平坦度
を向上させるプラナリゼーション加工技術への応用に適
した研磨方法および、その装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing method and a polishing apparatus for a wafer, and more particularly to a polishing method and a polishing apparatus suitable for application to a planarization processing technique for improving the flatness of a semiconductor device. .

【0002】[0002]

【従来の技術】半導体デバイスの高集積化、大規模化の
進展に伴い、配線がチップに占める面積が大きくなり、
パターンの微細化や配線の多層化がますます重要になっ
てきている。そのために、素材としての半導体単結晶か
らなるウエーハの平坦度は、より高精度のものが要求さ
れていると同時に、微細化した高密度配線に対してリソ
グラフィやエッチングを適用するには、下地の絶縁膜を
予め十分に平坦化しておかなければならない。従来、ウ
エーハの研磨は、ウエーハ全面での厚さを均等化するこ
とを目的とし、ウエーハの肉厚大の部分を優先的に除去
する方向で開発されてきた。ところが最近、半導体デバ
イスの製造過程において、その平坦度を向上させるプラ
ナリゼーション技術、すなわちウエーハ上の配線等に対
応して発生したシリコン酸化膜の突起部分を平坦化する
手段の一つとして、上記研磨方法を採用することが検討
されはじめた。ただしここでは、肉厚にバラツキのある
ウエーハ表面に均一な厚さで成膜された酸化膜を、その
膜厚の均一性を維持して加工できることが望まれてい
る。
2. Description of the Related Art As semiconductor devices become more highly integrated and larger in scale, the area occupied by wiring in a chip increases.
Pattern miniaturization and multilayer wiring are becoming increasingly important. Therefore, the flatness of a wafer made of a semiconductor single crystal as a raw material is required to have higher accuracy, and at the same time, in order to apply lithography or etching to finer high-density wiring, it is necessary to use an underlying base. The insulating film must be sufficiently planarized in advance. Conventionally, wafer polishing has been developed in order to equalize the thickness of the entire surface of the wafer, and to preferentially remove a thick portion of the wafer. However, recently, in the process of manufacturing a semiconductor device, the above-mentioned polishing is used as one of means for planarizing a projection portion of a silicon oxide film generated corresponding to wiring on a wafer or the like, in order to improve flatness of the semiconductor device. The adoption of the method has begun to be considered. However, here, it is desired that an oxide film formed with a uniform thickness on a wafer surface having a thickness variation can be processed while maintaining the uniformity of the film thickness.

【0003】換言すれば、断面形状が図4に示される半
導体デバイスを製造する工程中のウエーハ(以下、ウエ
ーハWと記載する)の厚肉部分と薄肉部分とで表面から
の研磨量を同一として、断面形状が図6に示されるウエ
ーハWに研磨する研磨技術、いわゆる表面基準研磨技術
の必要性が高まっている。この研磨技術は、具体的には
図4に示すウエーハ61上の酸化膜63(層間絶縁膜)
における段差すなわち酸化膜突起64を除去すると共
に、酸化膜63の厚さを均一に維持するものであり、こ
のような研磨技術として例えば、特開平5−69310
号公報「ウエーハの鏡面研磨装置」に開示されたもの
(図18)や、図20に示すものなど種々の研磨装置が
提案されている。なお、図4において62は配線を示し
ている。
[0003] In other words, the amount of polishing from the surface of a thick portion and a thin portion of a wafer (hereinafter, referred to as a wafer W) in the process of manufacturing a semiconductor device having a sectional shape shown in FIG. The need for a polishing technique for polishing a wafer W having a sectional shape shown in FIG. 6, that is, a so-called surface-based polishing technique, has been increasing. This polishing technique is, specifically, an oxide film 63 (interlayer insulating film) on a wafer 61 shown in FIG.
And the oxide film projections 64 are removed, and the thickness of the oxide film 63 is kept uniform.
Various polishing apparatuses have been proposed, such as the apparatus disclosed in Japanese Unexamined Patent Application Publication No. 2000-125, "wafer mirror polishing apparatus" (FIG. 18) and the apparatus shown in FIG. In FIG. 4, reference numeral 62 denotes a wiring.

【0004】上記公報「ウエーハの鏡面研磨装置」に記
載の装置は、図18に示すように、ウエーハWを保持す
る平面に柔軟性のある弾性膜71を用い、この弾性膜7
1をリング状の胴部72に均一の張力ではりつけ、弾性
膜71の、前記ウエーハWを保持している面と反対側の
面に、ウエーハWの押しつけ圧調整用の流体を供給する
流体供給手段73を設けた構成となっている。なお、7
4は回転軸、75は弾性膜71の下面に接着した環状の
案内板(テンプレート)、76は研磨定盤である。この
研磨装置では、リング状の胴部72をシールしている弾
性膜71が可撓性に富むものであるため均一な研磨圧力
分布が形成されるので、図22(b)に示すような周辺
ダレAを伴う研磨ウエーハWの発生を防止し、図21
(b)に示す断面形状の研磨ウエーハWを得ることがで
きると記載されている。
[0004] The apparatus described in the above-mentioned publication "Wafer Mirror Polishing Apparatus" uses a flexible elastic film 71 on a plane holding a wafer W, as shown in FIG.
1 is attached to the ring-shaped body 72 with uniform tension, and a fluid supply for supplying a fluid for adjusting the pressing pressure of the wafer W to the surface of the elastic film 71 opposite to the surface holding the wafer W is provided. The configuration is such that a means 73 is provided. Note that 7
Reference numeral 4 denotes a rotating shaft, 75 denotes an annular guide plate (template) adhered to the lower surface of the elastic film 71, and 76 denotes a polishing platen. In this polishing apparatus, a uniform polishing pressure distribution is formed since the elastic film 71 sealing the ring-shaped body 72 is rich in flexibility, so that the peripheral sag A as shown in FIG. The generation of the polishing wafer W accompanying
It is described that a polishing wafer W having a cross-sectional shape shown in (b) can be obtained.

【0005】一方、図20に示す研磨装置は、硬質材料
によるウエーハ保持板81の下面に軟質のマウンティン
グパッド82、環状のテンプレート83の順に設け、研
磨定盤84の上面に軟質の研磨布85を設けたものであ
る。
On the other hand, in the polishing apparatus shown in FIG. 20, a soft mounting pad 82 and an annular template 83 are provided in this order on a lower surface of a wafer holding plate 81 made of a hard material, and a soft polishing cloth 85 is provided on an upper surface of a polishing platen 84. It is provided.

【0006】[0006]

【発明が解決しようとする課題】ところで、ウエーハ研
磨におけるその表面層の除去量は、研磨圧力に強く依存
する。従って上記表面基準研磨技術においては、図21
(a)に示すように、ウエーハW表面の研磨圧力の分布
Dを均一にすること(等分布荷重)、および研磨圧力を
かける領域をウエーハWの背面(研磨面と反対側の面)
に限定することが極めて重要である。なお、図21
(a)において91はウエーハ保持板、92は研磨布を
示している。
Incidentally, the removal amount of the surface layer in the wafer polishing strongly depends on the polishing pressure. Therefore, in the surface-based polishing technique, FIG.
As shown in (a), the distribution D of the polishing pressure on the surface of the wafer W is made uniform (uniformly distributed load), and the region where the polishing pressure is applied is set to the rear surface of the wafer W (the surface opposite to the polishing surface).
Is very important. Note that FIG.
9A, reference numeral 91 denotes a wafer holding plate, and 92 denotes a polishing cloth.

【0007】ところが、上記公報記載の研磨装置では、
弾性膜71を均一肉厚のもので構成し、胴部72に均一
の張力ではりつけてあるため、図19に示すように弾性
膜71外周端部の下面と研磨定盤76上面との間隔Hが
所定範囲より小さい場合には、図22(a)に示すよう
にウエーハ外周部で研磨圧力が過大となり、図22
(b)のように研磨中のウエーハWに周辺ダレAが発生
しやすくなり、また、間隔Hが所定範囲より大きい場合
には、図23(a)のようにウエーハ外周部で研磨圧力
が過小となって、図23(b)に示すように研磨中のウ
エーハWの周辺部に突起Bが発生しやすくなる問題があ
る。またその対策として、上記間隔Hを正確に調整する
ことは、必ずしも容易ではない。
However, in the polishing apparatus described in the above publication,
Since the elastic film 71 has a uniform thickness and is glued to the body 72 with a uniform tension, the gap H between the lower surface of the outer peripheral end of the elastic film 71 and the upper surface of the polishing platen 76 is formed as shown in FIG. Is smaller than the predetermined range, the polishing pressure becomes excessive at the outer peripheral portion of the wafer as shown in FIG.
As shown in FIG. 23B, the peripheral sag A is likely to occur on the wafer W being polished, and when the interval H is larger than a predetermined range, the polishing pressure is too small at the outer peripheral portion of the wafer as shown in FIG. As a result, as shown in FIG. 23 (b), there is a problem that the projection B is likely to be generated around the wafer W being polished. As a countermeasure, it is not always easy to adjust the interval H accurately.

【0008】一方、図20に示す研磨装置では、ウエー
ハの保持構造が簡単になる利点があるものの、マウンテ
ィングパッド82の特性(厚さ・弾性・劣化特性)のバ
ラツキの影響を受けやすく、研磨圧力の均一化が難しい
欠点があった。このため研磨中のウエーハWに、図22
(b)のような周辺ダレAや、図23(b)のような周
辺突起Bが発生する問題があった。
On the other hand, the polishing apparatus shown in FIG. 20 has an advantage that the structure for holding the wafer is simplified, but is susceptible to variations in the characteristics (thickness, elasticity, and deterioration characteristics) of the mounting pad 82, and the polishing pressure is high. There was a disadvantage that it was difficult to make the uniformity. For this reason, FIG.
There is a problem that a peripheral sag A as shown in FIG. 23B and a peripheral protrusion B as shown in FIG.

【0009】本発明は、上記の点に鑑みなされたもの
で、その目的は、ウエーハの周辺ダレや周辺突起の発生
を伴うことなく容易に表面基準研磨を行うことができる
研磨方法および、その装置を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and an object of the present invention is to provide a polishing method and a polishing apparatus capable of easily performing a surface-based polishing without causing peripheral sagging and peripheral projection of a wafer. Is to provide.

【0010】[0010]

【課題を解決するための手段】請求項1に記載のウエー
ハの研磨方法は、ウエーハをその背面をウエーハ保持板
に当接させて保持し、該ウエーハ保持板の背面側に加圧
流体を供給することによりウエーハを研磨定盤に圧接さ
せて研磨する方法において、ウエーハ研磨時のウエーハ
保持板背面の加圧領域を、ウエーハ保持板がウエーハ背
面と対面する領域と合致させることを特徴とする。
According to a first aspect of the present invention, there is provided a method for polishing a wafer, wherein the wafer is held with its back surface in contact with a wafer holding plate, and a pressurized fluid is supplied to the back side of the wafer holding plate. The method of polishing a wafer by pressing the wafer against a polishing platen is characterized in that the pressure region on the back surface of the wafer holding plate during wafer polishing matches the region where the wafer holding plate faces the back surface of the wafer .

【0011】請求項2に記載のウエーハの研磨方法は、
請求項1において前記ウエーハ保持板としてウエーハ保
持領域が硬質薄板からなる可撓性の板体を用い、ウエー
ハ外周端部を前記可撓性板体の外周端と合致させた状態
でウエーハをウエーハ保持板に保持することにより、ウ
エーハ研磨時のウエーハ保持板背面の加圧領域を、ウエ
ーハ保持板がウエーハ背面と対面する領域と合致させる
ことを特徴とする。
[0011] The method for polishing a wafer according to claim 2 is characterized in that:
2. The wafer holding plate according to claim 1, wherein the wafer holding plate is a wafer holding plate.
The holding area is made of a rigid plate made of a hard thin plate.
(C) a state in which the outer peripheral end is matched with the outer peripheral end of the flexible plate body
By holding the wafer on the wafer holding plate with
The pressurized area on the back of the wafer holding plate during wafer polishing
-Match the area where the wafer holding plate faces the back of the wafer
It is characterized by the following.

【0012】請求項3に記載のウエーハ研磨装置は、ウ
エーハをその背面をウエーハ保持板に当接させて保持
し、該ウエーハ保持板の背面側に加圧流体を供給するこ
とによりウエーハを研磨定盤に圧接させて研磨する装置
において、ウエーハ保持領域を硬質材料の薄板で構成し
て可撓性を付与したウエーハ保持板をハウジングの開口
部に、伸縮性の環状部材を介して固定して前記開口部を
密閉し、前記ハウジング内を加圧流体の供給源に連絡し
たことを特徴とする。
According to a third aspect of the present invention, in the wafer polishing apparatus, the wafer is polished and fixed by supplying a pressurized fluid to the rear side of the wafer holding plate while holding the wafer with its rear surface in contact with the wafer holding plate. In an apparatus for polishing by pressing against a plate, the wafer holding region is made of a thin plate of a hard material, and a wafer holding plate provided with flexibility is fixed to an opening of a housing via an elastic annular member. The opening is sealed, and the inside of the housing is connected to a supply source of a pressurized fluid.

【0013】請求項4に記載のウエーハ研磨装置は、請
求項3において、前記ウエーハ保持板の中央部を前記ウ
エーハ保持領域とし、該保持領域の外周端部に前記環状
部材の内周端部を、これら端部の位置を合致させて固定
し、ウエーハ保持板におけるウエーハ保持領域より外周
側部分の可撓性をウエーハ保持領域よりも高くして可動
領域とし、更にウエーハ保持板の外周端部を前記ハウジ
ングに固定したことを特徴とする。
According to a fourth aspect of the present invention, in the wafer polishing apparatus according to the third aspect, a central portion of the wafer holding plate is the wafer holding region, and an inner peripheral end of the annular member is provided at an outer peripheral end of the holding region. The positions of these end portions are matched and fixed, the flexibility of the outer peripheral side portion of the wafer holding plate in the wafer holding region is made higher than the wafer holding region as a movable region, and the outer peripheral end of the wafer holding plate is further fixed. It is characterized by being fixed to the housing.

【0014】[0014]

【作用】請求項1,2に記載のウエーハ研磨方法およ
び、請求項3に記載のウエーハ研磨装置においては、ウ
エーハをウエーハ保持板に保持し、加圧流体供給源から
例えば適正圧力の圧縮空気を供給すれば、加圧によるウ
エーハ保持板の変位によってウエーハが研磨定盤に所定
圧力で圧接するので、以下通常の要領で研磨を行うこと
ができる。すなわち請求項1,2の研磨方法では、ウエ
ーハ研磨時のウエーハ保持板背面の加圧領域を、ウエー
ハ保持板がウエーハ背面と対面する領域と合致させるの
で、ウエーハの背面全体にわたって均一の研磨圧力分布
下で、かつ研磨圧がかかる領域がウエーハ背面外に広が
ることなく、ウエーハを研磨することができる。特に請
求項3の研磨装置では、前記環状部材を伸縮性のものと
したので、ウエーハ保持板は環状部材と一体的に、流体
圧に応じて自由に変位することができる。すなわち、ウ
エーハ保持板では、そのウエーハ保持領域を硬質ゴム製
等の薄板で構成して可撓性保持板としたので、ウエーハ
の背面全体にわたって均一の研磨圧力分布下で、かつ研
磨圧がかかる領域がウエーハ背面外に広がることなく、
しかもウエーハ保持板がウエーハのグローバルな凹凸に
順応した形態で撓んで(ウエーハの反りを吸収する)、
ウエーハを研磨することができる。
In the wafer polishing method according to the first and second aspects and the wafer polishing apparatus according to the third aspect, the wafer is held on a wafer holding plate, and compressed air having an appropriate pressure is supplied from a pressurized fluid supply source. When the wafer is supplied, the wafer is pressed against the polishing platen at a predetermined pressure due to the displacement of the wafer holding plate due to pressurization, so that the polishing can be performed in a usual manner. That is, in the polishing method according to claims 1 and 2,
The pressurized area on the back of the wafer holding plate during wafer polishing
The holding plate matches the area facing the back of the wafer.
And uniform polishing pressure distribution across the back of the wafer
The area under the polishing pressure is widened outside the back of the wafer
Without polishing, the wafer can be polished. In particular, in the polishing apparatus according to the third aspect, since the annular member is made to be elastic, the wafer holding plate can be freely displaced integrally with the annular member in accordance with the fluid pressure. That is, in the wafer holding plate, the wafer holding region is formed of a thin plate made of hard rubber or the like to be a flexible holding plate, so that the region where the polishing pressure is applied under a uniform polishing pressure distribution over the entire back surface of the wafer is applied. Without spreading outside the back of the wafer,
Moreover, the wafer holding plate bends in a form adapted to the global irregularities of the wafer (absorbs the warpage of the wafer),
The wafer can be polished.

【0015】請求項4に記載のウエーハ研磨装置におい
ても環状部材とウエーハ保持板が一体的に変位するが、
この場合、ウエーハ保持板を所定のとおりに構成したの
で、ウエーハ保持板の中央部がウエーハの保持・加圧領
域となるため、請求項1と同様の作用が得られる。これ
と同時にウエーハ保持板における前記吸着・加圧領域よ
り外周側の部分が可動領域となるため、回避困難な数μ
m〜数十μmオーダの研磨機の組立精度不良、部品加工
精度不良、または使用による熱的・機械的変形などが吸
収されるうえ、研磨摩擦力に抗してウエーハを所定位置
に保持して研磨することができる。
In the wafer polishing apparatus according to the fourth aspect, the annular member and the wafer holding plate are integrally displaced.
In this case, since the wafer holding plate is configured as specified, the central portion of the wafer holding plate serves as a wafer holding / pressing region. At the same time, since the portion of the wafer holding plate on the outer peripheral side from the suction / pressing area becomes the movable area, it is difficult to avoid several μm.
Poor assembling accuracy of the polishing machine on the order of m to several tens of μm, poor processing accuracy of parts, thermal and mechanical deformation due to use, etc. are absorbed, and the wafer is held at a predetermined position against the abrasive friction force. Can be polished.

【0016】[0016]

【実施例】次に、本発明を図面に示す実施例により、更
に具体的に説明する。 実施例1 図1は毎葉式ウエーハ研磨装置の要部断面図、図2はウ
エーハ保持板(以下、保持板と記載する)の平面図、図
3はその断面図である。この実施例において、前記保持
板は多数の真空吸着孔を形成したウエーハの吸着板と
し、図1に示すように、ウエーハの吸着・回転装置11
を研磨定盤31と対向させて、かつ昇降可能に設けてウ
エーハ研磨装置を構成する。吸着・回転装置11では、
流路12および13を形成した回転軸14の先端部に、
一端部を開口し内周面に円環状突起15を設けた円筒状
のハウジング16を固着し、回転軸14を強制回転可
能、かつ昇降可能とする。前記流路12,13はそれぞ
れ配管および開閉弁を介して真空ポンプ、コンプレッサ
(いずれも図示せず)に連絡する。
Next, the present invention will be described more specifically with reference to embodiments shown in the drawings. Example 1 FIG. 1 is a sectional view of a main part of a wafer polisher, FIG. 2 is a plan view of a wafer holding plate (hereinafter, referred to as a holding plate), and FIG. 3 is a sectional view thereof. In this embodiment, the holding plate is a wafer suction plate formed with a large number of vacuum suction holes, and as shown in FIG.
Is provided so as to face the polishing platen 31 and to be able to move up and down to constitute a wafer polishing apparatus. In the suction / rotation device 11,
At the tip of the rotating shaft 14 where the flow paths 12 and 13 are formed,
A cylindrical housing 16 having one end opened and an annular projection 15 provided on the inner peripheral surface is fixedly attached, so that the rotating shaft 14 can be forcibly rotated and can be moved up and down. The flow paths 12 and 13 are connected to a vacuum pump and a compressor (neither is shown) via a pipe and an on-off valve, respectively.

【0017】前記ハウジング16の環状突起15には伸
縮性の環状部材として、中央部に円形孔を開口した弾性
に富む材料による盆状のシート、例えばゴムシート17
を、リング状の取り付け部材18をねじ止めすることに
より固定し、該固定部をゴムシート17でシールする。
前記円形孔の口径は、研磨するべきウエーハWの直径に
合致したものとする。
The annular projection 15 of the housing 16 is a stretchable annular member, a tray-like sheet made of a highly elastic material having a circular hole opened in the center, for example, a rubber sheet 17.
Is fixed by screwing a ring-shaped mounting member 18, and the fixing portion is sealed with a rubber sheet 17.
The diameter of the circular hole matches the diameter of the wafer W to be polished.

【0018】前記保持板19は、例えば硬質プラスチッ
ク材料、硬質ゴム、金属等の硬質材料の円形薄板で構成
して可撓性を付与したものとし、図1および図2に示す
ように、中央部を円形のウエーハ保持領域20とし、そ
の外側のリング状部分の可撓性をウエーハ保持領域20
より高くすることによって可動領域21を形成する。な
お、ウエーハ保持領域20と可動領域21との可撓性の
差は、後述するように、例えば可動領域21の肉厚を薄
くしたり、可動領域21に貫通孔を設けることにより達
成される。図1,図2において符号mはウエーハ保持領
域20と可動領域21との境界線であり、nは可動領域
21とそれより外側のハウジング16との固定部分との
境界線である。
The holding plate 19 is made of, for example, a circular thin plate of a hard material such as a hard plastic material, a hard rubber, or a metal, and is provided with flexibility. As shown in FIGS. Is a circular wafer holding region 20, and the flexibility of the outer ring-shaped portion is
The movable area 21 is formed by increasing the height. The difference in flexibility between the wafer holding region 20 and the movable region 21 is achieved by, for example, reducing the thickness of the movable region 21 or providing a through hole in the movable region 21 as described later. In FIGS. 1 and 2, reference numeral m denotes a boundary line between the wafer holding region 20 and the movable region 21, and n denotes a boundary line between the movable region 21 and a fixed portion of the housing 16 outside the movable region 21.

【0019】保持板19のウエーハ保持領域20には、
図2に示すように真空吸着孔(以下、吸着孔と記載す
る)22を多数形成するが、この場合、保持板19の中
心部に一つと、これを中心とする同心円上にそれぞれ複
数貫通形成する。また図3に示すように、片面に長溝2
3を形成した薄肉、小幅で軟質の棒状ゴム24(または
棒状の軟質樹脂)を保持板19の背面すなわち、ウエー
ハ吸着面と反対側の面に接着することにより、中心部の
吸着孔22cを含めて全ての吸着孔22をシールすると
共に、中心部の吸着孔22cをその他の全ての吸着孔2
2と連通させ、更に中心部の吸着孔22cに、中空のコ
ネクタ25(図1,図3を参照)を突設する。また、図
1に示すように、回転軸14に設けた流路12の開口端
部に中空のコネクタ26を突設し、このコネクタ26と
前記コネクタ25の間にゴムホース等のフレキシブルホ
ース27を取りつける。更に保持板19の外周端部をハ
ウジング16の先端部にねじ止め等により固定し、保持
板19のウエーハ保持領域20における外周端部を環状
部材としてのゴムシート17の下端部に接着することに
より、ハウジング16内に密閉室29を形成する。
In the wafer holding area 20 of the holding plate 19,
As shown in FIG. 2, a plurality of vacuum suction holes (hereinafter, referred to as suction holes) 22 are formed. In this case, one is formed at the center of the holding plate 19 and a plurality of holes are formed on concentric circles around the center. I do. In addition, as shown in FIG.
3 is bonded to the back surface of the holding plate 19, that is, the surface opposite to the wafer suction surface, by including the thin, small-width, soft rod-shaped rubber 24 (or rod-shaped soft resin) including the suction hole 22c at the center. All the suction holes 22 are sealed with the suction holes 22c at the center, and all the other suction holes 2c are sealed.
2, and a hollow connector 25 (see FIGS. 1 and 3) is protruded from the suction hole 22c at the center. As shown in FIG. 1, a hollow connector 26 is protruded from an open end of the flow path 12 provided on the rotating shaft 14, and a flexible hose 27 such as a rubber hose is attached between the connector 26 and the connector 25. . Further, the outer peripheral end of the holding plate 19 is fixed to the distal end of the housing 16 by screwing or the like, and the outer peripheral end of the holding plate 19 in the wafer holding region 20 is bonded to the lower end of the rubber sheet 17 as an annular member. A closed chamber 29 is formed in the housing 16.

【0020】図1に示す構造を簡単に組み立てるには、
ハウジング16を上下に分割するのが好ましい。例えば
図1の一点鎖線Lで示す部分で互いに嵌合可能に2分割
し、ボルトで締結するように構成した場合には、あらか
じめハウジング16の下半部に保持板19を所定の態様
で固定し、フレキシブルホース27をコネクタ25に取
りつけておき、フレキシブルホース27をコネクタ26
に取りつけた後、下半部を上半部に締結することで、簡
便・迅速に組み立てることができる。
To easily assemble the structure shown in FIG.
Preferably, the housing 16 is divided vertically. For example, in a case where the structure is divided into two parts so as to be fittable with each other at a portion indicated by a dashed line L in FIG. 1 and fastened with bolts, the holding plate 19 is fixed to the lower half of the housing 16 in advance in a predetermined manner. The flexible hose 27 is attached to the connector 25, and the flexible hose 27 is connected to the connector 26.
Then, the lower half part is fastened to the upper half part, so that assembly can be performed easily and quickly.

【0021】保持板19をウエーハ保持領域20と、こ
れより可撓性の高い可動領域21により構成し(これに
ついては後記の各実施例で説明する)、ウエーハ保持領
域20の外周端部をゴムシート17に固定し、保持板1
9の外周端部をハウジング16の先端部に固定したの
は、数μm〜数十μmオーダの研磨機の組立精度不良、
部品加工精度不良、または使用による熱的・機械的変形
などを吸収し、かつ研磨摩擦力に抗してウエーハWを所
定位置に保持して表面基準研磨するのが目的である。
The holding plate 19 is composed of a wafer holding area 20 and a movable area 21 having a higher flexibility (this will be described in each embodiment described later), and the outer peripheral end of the wafer holding area 20 is made of rubber. Fixing to the sheet 17, holding plate 1
9 is fixed to the front end of the housing 16 because the assembly accuracy of the polishing machine on the order of several μm to several tens μm is poor.
It is an object of the present invention to perform surface reference polishing while holding a wafer W at a predetermined position against a component processing accuracy defect, thermal / mechanical deformation due to use, and the like, and resisting abrasion frictional force.

【0022】前記盆状のシートとしてはゴムシート17
の代わりに、プラスチックシートを蛇腹状に形成したも
のを用いることもできる。いずれにしても、ハウジング
16内の流体圧に順応して自在に伸縮する性質を有する
ものであればよい。保持板19を構成する材料として
は、機械的強度があり、かつ可撓性や弾性、耐熱性を有
する材料が用いられるが、プラスチック材料で好ましい
ものとしては熱硬化性樹脂、耐熱熱可塑性樹脂、あるい
はこれらの樹脂をガラス繊維や合成繊維で補強したもの
の他、繊維や紙等により補強した積層品が挙げられる。
また、プラスチック製の保持板に代えて硬質ゴム製の薄
板や、耐食性の金属製薄板を使用することもできる。一
方、前記研磨定盤31上に設ける研磨布32は、保持板
19による加圧力によっては容易に塑性変形しないもの
であることが好ましく、独立気泡構造を有するウレタン
発泡体よりなる研磨布、ポリエステル不織布にポリウレ
タンを含浸させた研磨布など、公知のものを使用するこ
とができる。
A rubber sheet 17 is used as the tray-shaped sheet.
Alternatively, a plastic sheet formed in a bellows shape can be used. In any case, any material having a property of freely expanding and contracting in accordance with the fluid pressure in the housing 16 may be used. As a material forming the holding plate 19, a material having mechanical strength, flexibility, elasticity, and heat resistance is used. As a plastic material, a thermosetting resin, a heat-resistant thermoplastic resin, Alternatively, in addition to those obtained by reinforcing these resins with glass fibers or synthetic fibers, laminated products reinforced with fibers, paper, or the like may be used.
Further, a hard rubber thin plate or a corrosion-resistant metal thin plate can be used instead of the plastic holding plate. On the other hand, it is preferable that the polishing cloth 32 provided on the polishing platen 31 does not easily undergo plastic deformation by the pressing force of the holding plate 19, and a polishing cloth made of a urethane foam having a closed cell structure, a polyester nonwoven fabric A known cloth such as a polishing cloth impregnated with polyurethane can be used.

【0023】つぎに、上記研磨装置の作用について図1
〜6を参照して説明する。まず前記真空ポンプを作動さ
せ、流路12を介して吸気することにより、断面構造が
図4に示されるウエーハW(この図では説明の便宜を考
慮して、ウエーハのグローバルな凹凸を誇張して示し
た)を保持板19に吸着保持する。この場合、ウエーハ
Wの外周端を、保持板19のウエーハ保持領域20外周
端と合致させることが重要である。次いで、前記コンプ
レッサの作動により、流路13を介して所定圧の圧縮空
気を密閉室29内に供給し、ゴムシート17と保持板1
9を一体的に変位させてウエーハWを研磨布32に圧接
させ、通常の方法で研磨を行う。
Next, the operation of the above polishing apparatus will be described with reference to FIG.
This will be described with reference to FIGS. First, the vacuum pump is actuated, and air is sucked in through the flow path 12, thereby producing a wafer W having a cross-sectional structure shown in FIG. 4 (in this figure, exaggerating the global unevenness of the wafer for convenience of explanation). (Shown) is held by suction on the holding plate 19. In this case, it is important to match the outer peripheral edge of the wafer W with the outer peripheral edge of the wafer holding region 20 of the holding plate 19. Then, by the operation of the compressor, compressed air at a predetermined pressure is supplied into the closed chamber 29 through the flow path 13, and the rubber sheet 17 and the holding plate 1 are supplied.
The wafer W is pressed against the polishing cloth 32 by displacing the wafer 9 integrally, and polishing is performed by a normal method.

【0024】この場合、保持板19の吸着孔22同士を
連通させるための部材として棒状ゴム24を用いたの
で、保持板19におけるウエーハ保持領域20の可撓性
が損なわれることなく、また保持板19と真空用流路1
2とを連絡する部材としてフレキシブルホース27を設
け、保持板19をゴムシート17に取りつけたので、保
持板19を、流路13を介して供給される圧縮空気の圧
力に応じて自在に変位させることができる。また、保持
板19をハウジング16の先端部に取りつけたので、ウ
エーハWの研磨面に作用する摩擦力に抗してウエーハW
を所定位置に保持することができる。このため、保持板
19面からの加圧によって、図5に示すように、ウエー
ハW表面の酸化膜63の全面が研磨布32表面に接触し
た状態となり、保持板19はウエーハWの背面全体にわ
たって均一の研磨圧力分布下で、かつ研磨圧がかかる領
域がウエーハ背面外に広がることなく、しかも保持板1
9がウエーハWのグローバルな凹凸に順応した形態に撓
んで研磨が行われる。この結果、図6に示すように配線
62配設部に対応する酸化膜突起64(図4)が優先的
に、かつ周辺ダレや、周辺に研磨不足による突起が発生
することなくウエーハ全体にわたり研磨量を一定にして
研磨することができ、酸化膜63の膜厚が均一なウエー
ハWを得ることができる。
In this case, since the rod-shaped rubber 24 is used as a member for connecting the suction holes 22 of the holding plate 19 to each other, the flexibility of the wafer holding region 20 in the holding plate 19 is not impaired, and 19 and vacuum channel 1
Since a flexible hose 27 is provided as a member for communicating with the holding member 2 and the holding plate 19 is attached to the rubber sheet 17, the holding plate 19 is freely displaced in accordance with the pressure of the compressed air supplied through the flow path 13. be able to. Further, since the holding plate 19 is attached to the front end of the housing 16, the wafer W is opposed to the frictional force acting on the polished surface of the wafer W.
Can be held in place. For this reason, as shown in FIG. 5, the entire surface of the oxide film 63 on the surface of the wafer W is brought into contact with the surface of the polishing pad 32 by the pressure from the surface of the holding plate 19, and the holding plate 19 extends over the entire back surface of the wafer W. Under a uniform polishing pressure distribution, the region to which the polishing pressure is applied does not spread outside the rear surface of the wafer.
Polishing is performed by bending the wafer 9 into a form adapted to the global unevenness of the wafer W. As a result, as shown in FIG. 6, the oxide film projection 64 (FIG. 4) corresponding to the portion where the wiring 62 is disposed is preferentially polished, and the entire wafer is polished without causing sagging around the periphery and projections due to insufficient polishing around the periphery. Polishing can be performed with a constant amount, and a wafer W having a uniform thickness of the oxide film 63 can be obtained.

【0025】つぎに、本発明のウエーハ研磨装置におい
て、保持板19の可動領域21の可撓性をウエーハ保持
領域20より高くする場合の別の態様について、以下の
実施例により説明する。 実施例2 この実施例は、同一材料により保持板を構成したもの
で、図7に示すように保持板19における可動領域21
の肉厚をウエーハ保持領域20より薄くしたものであ
る。保持板19の好ましい肉厚はウエーハの研磨圧力
や、保持板を構成する材料の弾性率等によって異なるが
通常の研磨条件では、上記硬質プラスチック製薄板を用
いる場合、ウエーハ保持領域20を0.5〜5.0mm
とし、可動領域を0.3〜3.0mmとするのがよく、
硬質ゴムの薄板からなる保持板を用いる場合にはウエー
ハ保持領域を1.0〜8.0mmとし、可動領域を0.
5〜4.0mmとするのがよい。また、金属製の薄板を
使用する場合には、ウエーハ保持領域を0.1〜1.0
mmとし、可動領域を0.01〜0.05mmとするの
が望ましい。
Next, another embodiment in which the flexibility of the movable region 21 of the holding plate 19 is made higher than that of the wafer holding region 20 in the wafer polishing apparatus of the present invention will be described with reference to the following embodiments. Embodiment 2 In this embodiment, the holding plate is made of the same material, and as shown in FIG.
Is made thinner than the wafer holding region 20. The preferred thickness of the holding plate 19 depends on the polishing pressure of the wafer, the elastic modulus of the material constituting the holding plate, and the like. However, under normal polishing conditions, when the hard plastic thin plate is used, the wafer holding region 20 has a thickness of 0.5 mm. ~ 5.0mm
And the movable area is preferably set to 0.3 to 3.0 mm.
When a holding plate made of a hard rubber thin plate is used, the wafer holding area is set to 1.0 to 8.0 mm, and the movable area is set to 0.1 to 8.0 mm.
It is good to be 5-4.0 mm. When a metal thin plate is used, the wafer holding area is set to 0.1 to 1.0.
mm, and the movable area is desirably 0.01 to 0.05 mm.

【0026】実施例3,4 実施例3は、図8に示すように保持板19を同一材料、
かつ同一肉厚の薄板で構成し、これに楕円形、円形また
は扇形等の貫通孔28を多数配設して可動領域21を形
成したものである。なお、貫通孔28に代えて該貫通孔
と同一形状の凹部を多数形成し、該凹部により薄肉部を
形成することもできるし、凹部をリング状に形成して可
動領域21のほぼ全体を薄肉部とすることもできる。実
施例4は、図9に示すように保持板19を異種の材料で
構成したもので、ウエーハ保持領域20を硬質プラスチ
ック製の薄板で形成し、可動領域21の材料を合成繊維
入りのゴムシート、または合成繊維製の織物もしくは編
物として、これらを接着したものである。
Embodiments 3 and 4 In the embodiment 3, as shown in FIG.
The movable area 21 is formed by arranging a large number of through-holes 28 having an elliptical shape, a circular shape, a fan shape, or the like in the thin plate having the same thickness. Instead of the through hole 28, a number of concave portions having the same shape as the through hole may be formed, and the concave portion may form a thin portion. Alternatively, the concave portion may be formed in a ring shape and almost the entire movable region 21 is thinned. It can also be a part. In the fourth embodiment, as shown in FIG. 9, the holding plate 19 is made of a different material, the wafer holding region 20 is formed of a hard plastic thin plate, and the material of the movable region 21 is a rubber sheet containing synthetic fibers. Or as a synthetic fiber woven or knitted fabric.

【0027】実施例5 実施例5は、図10に示すように保持板19の外周端部
を、軟質ゴム層42を介してハウジング16に固定した
ものである。
Embodiment 5 In Embodiment 5, the outer peripheral end of the holding plate 19 is fixed to the housing 16 via a soft rubber layer 42 as shown in FIG.

【0028】つぎに、保持板19の真空回路の構造例に
ついて説明する。 実施例6 この実施例では図11に示すように、保持板19のウエ
ーハ保持面側に吸着孔22を、保持板19の厚さ方向中
間部まで、かつ保持板19の中心部とその周りに多数形
成する。保持板19の背面側には渦巻状の溝43を形成
すると共に、吸着孔22を溝43に連通させる。また、
軟質ゴムまたは軟質樹脂製で渦巻状の棒体44により溝
43を密閉する。更に、溝43の中心部にコネクタ25
を突設し、このコネクタ25にフレキシブルホース(図
示せず)を連結することにより、全ての吸着孔22をフ
レキシブルホースを介して真空発生源に連絡する。
Next, an example of the structure of the vacuum circuit of the holding plate 19 will be described. Embodiment 6 In this embodiment, as shown in FIG. 11, the suction holes 22 are formed on the wafer holding surface side of the holding plate 19 to the middle of the holding plate 19 in the thickness direction, and the center of the holding plate 19 and its periphery. Form many. A spiral groove 43 is formed on the back side of the holding plate 19, and the suction holes 22 communicate with the groove 43. Also,
The groove 43 is sealed with a spiral rod 44 made of soft rubber or soft resin. Further, the connector 25 is provided at the center of the groove 43.
By connecting a flexible hose (not shown) to the connector 25, all the suction holes 22 are connected to a vacuum source via the flexible hose.

【0029】実施例7 この実施例は図12に示すように、保持板19の吸着孔
22を貫通孔として形成し、保持板19の背面における
吸着孔22配設部分をスポンジ45(または弾性繊維の
集合体)で被覆すると共に、スポンジ45を軟質ゴムの
蓋体46で被覆し、更に蓋体46の中心部に設けた通気
孔47を、コネクタ25およびフレキシブルホース27
を介して真空発生源に連絡したものである。
Embodiment 7 In this embodiment, as shown in FIG. 12, the suction holes 22 of the holding plate 19 are formed as through holes, and the portion where the suction holes 22 are provided on the back surface of the holding plate 19 is sponge 45 (or elastic fiber). , The sponge 45 is covered with a soft rubber cover 46, and a vent hole 47 formed in the center of the cover 46 is connected to the connector 25 and the flexible hose 27.
Through a vacuum source.

【0030】実施例8 この実施例は図13に示すように、保持板19の吸着孔
22を貫通孔として形成し、渦巻状の貫通孔48を形成
した軟質ゴム製の板体49を保持板19の背面に重ね合
わせて吸着孔22を渦巻状の貫通孔48に連通させ、更
に中心部に通気孔50を形成した軟質ゴム製の蓋体51
を板体49上に重ね合わせて通気孔50を渦巻状の貫通
孔48に連通させ、通気孔50を、コネクタ25および
フレキシブルホース27を介して真空発生源に連絡した
ものである。
Embodiment 8 In this embodiment, as shown in FIG. 13, the holding hole 19 of the holding plate 19 is formed as a through hole, and a soft rubber plate 49 having a spiral through hole 48 formed therein is used as a holding plate. A soft rubber lid 51 having the suction hole 22 communicated with the spiral through hole 48 by being superimposed on the back surface of the cover 19 and further having a vent hole 50 formed at the center.
Is superimposed on the plate body 49 to communicate the ventilation hole 50 with the spiral through hole 48, and the ventilation hole 50 is connected to a vacuum generation source via the connector 25 and the flexible hose 27.

【0031】実施例9 この実施例は図14に示すように、保持板19の表面に
渦巻状の溝43と、該溝の中心部に貫通孔52とを形成
して互いに連通させ、この貫通孔52を、コネクタ25
およびフレキシブルホース27を介して真空発生源に連
絡したものである。
Embodiment 9 In this embodiment, as shown in FIG. 14, a spiral groove 43 is formed on the surface of the holding plate 19 and a through hole 52 is formed at the center of the groove so as to communicate with each other. The hole 52 is connected to the connector 25.
And a vacuum source via a flexible hose 27.

【0032】実施例10 この実施例では図15に示すように、保持板19に吸着
孔22を貫通孔として形成する。軟質ゴム製の蓋体53
には、渦巻状の溝43とこの溝の中心部に貫通孔52と
を形成してこれらを互いに連通させる。そして、蓋体5
3を保持板19の背面に重ね合わせて吸着孔22を渦巻
状の溝43に連通させ、貫通孔52を、コネクタ25お
よびフレキシブルホース27を介して真空発生源に連絡
する。
Embodiment 10 In this embodiment, as shown in FIG. 15, the suction holes 22 are formed in the holding plate 19 as through holes. Soft rubber lid 53
In this case, a spiral groove 43 and a through hole 52 are formed at the center of the groove so as to communicate with each other. And lid 5
The suction hole 22 is communicated with the spiral groove 43 by superposing 3 on the back surface of the holding plate 19, and the through hole 52 is connected to a vacuum source via the connector 25 and the flexible hose 27.

【0033】実施例11 この実施例は図16に示すように、保持板19の吸着孔
22を貫通孔として形成し、これらの吸着孔を軟質ゴム
または軟質樹脂製のマニホールド54と連通させ、更に
マニホールド54をフレキシブルホース(図示せず)を
介して真空発生源に連絡したものである。
Embodiment 11 In this embodiment, as shown in FIG. 16, the suction holes 22 of the holding plate 19 are formed as through holes, and these suction holes are communicated with a manifold 54 made of soft rubber or soft resin. The manifold 54 is connected to a vacuum source via a flexible hose (not shown).

【0034】上記実施例はいずれも、保持板19にウエ
ーハWを一枚保持して研磨する毎葉式研磨装置であった
が、別の好ましい実施例として図17に示すように、大
型のハウジング16にリング状の取りつけ部材18とゴ
ムシート17をそれぞれ複数設け、保持板19をハウジ
ング16の先端部および全てのゴムシート17に取りつ
けたものが挙げられる。この研磨装置では、保持板19
にウエーハWを複数枚保持してバッチ式に研磨を行うこ
とができる。なお、この場合にもハウジング16内に密
閉室29を形成する。
In each of the above-described embodiments, a single wafer type polishing apparatus for holding and polishing one wafer W on the holding plate 19 is used. However, as another preferred embodiment, as shown in FIG. A plurality of ring-shaped mounting members 18 and a plurality of rubber sheets 17 are provided on each of the housings 16, and a holding plate 19 is mounted on the distal end portion of the housing 16 and all the rubber sheets 17. In this polishing apparatus, the holding plate 19
, A plurality of wafers W can be held at the same time and polishing can be performed in a batch system. In this case as well, a closed chamber 29 is formed in the housing 16.

【0035】また、ウエーハ保持板として、上記実施例
における真空吸着式の保持板19に代えて、バッキング
パッド固定方式の保持板(ノンワックス法)のものにも
適用することができる。この場合、ウエーハ保持板の下
面外周部に環状のテンプレートを定着する。
As the wafer holding plate, a backing pad fixing type holding plate (non-wax method) can be applied instead of the vacuum suction type holding plate 19 in the above embodiment. In this case, an annular template is fixed to the outer periphery of the lower surface of the wafer holding plate.

【0036】[0036]

【発明の効果】以上の説明で明らかなように、請求項
1,2に記載のウエーハ研磨方法および、請求項3に記
載のウエーハ研磨装置は、ウエーハ研磨時のウエーハ保
持板背面の加圧領域を、ウエーハ保持板がウエーハ背面
と対面する領域と合致させることを骨子とするものであ
り、ウエーハ保持領域を硬質プラスチック材製等の薄板
で構成して可撓性保持板としたので、ウエーハの背面全
体にわたって均一の研磨圧力分布下で、かつ研磨圧がか
かる領域がウエーハ背面外に広がることなく、しかもウ
エーハ保持板がウエーハのグローバルな凹凸に順応した
形態に撓んでウエーハを研磨することができる。このた
め、半導体デバイスを製造する工程におけるプラナリゼ
ーション加工を的確に行うことができて膜厚の均一性が
高い酸化膜(層間絶縁膜)を維持することが可能とな
り、半導体デバイスの多層配線の加工歩留りや信頼性が
向上する効果がある。請求項4に記載のウエーハ研磨装
置では、ウエーハ保持領域より外周側の部分を可動領域
としたので、回避困難な数μm〜数十μmオーダの研磨
機の組立精度不良等が吸収されるうえ、研磨摩擦力に抗
してウエーハを所定位置に保持して研磨することができ
るので、プラナリゼーションの精度が更に向上し、極め
て信頼性の高いデバイスを得ることができる効果があ
る。
As is apparent from the above description, the wafer polishing method according to the first and second aspects and the wafer polishing apparatus according to the third aspect maintain the wafer during polishing.
The pressurized area on the back of the holding plate, the wafer holding plate is the back of the wafer
The main point is to match the area facing the wafer, and the wafer holding area is formed of a thin plate made of a hard plastic material or the like to be a flexible holding plate, so that a uniform polishing pressure distribution over the entire back surface of the wafer. The wafer can be polished while the region under the polishing pressure does not spread outside the rear surface of the wafer, and the wafer holding plate bends into a form adapted to the global unevenness of the wafer. For this reason, planarization processing in the process of manufacturing a semiconductor device can be performed accurately, and an oxide film (interlayer insulating film) having a high uniformity of the film thickness can be maintained. This has the effect of improving yield and reliability. In the wafer polishing apparatus according to the fourth aspect, since the portion on the outer peripheral side from the wafer holding area is the movable area, inferior assembly accuracy of the polishing machine of several μm to several tens μm, which is difficult to avoid, is absorbed. Since the wafer can be polished while holding the wafer at a predetermined position against the polishing frictional force, the precision of planarization can be further improved, and an extremely reliable device can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施例1の要部を示す断面図である。FIG. 1 is a cross-sectional view illustrating a main part of a first embodiment of the present invention.

【図2】実施例1におけるウエーハ保持板の平面図で
る。
FIG. 2 is a plan view of a wafer holding plate according to the first embodiment.

【図3】実施例1におけるウエーハ保持板の断面図であ
る。
FIG. 3 is a cross-sectional view of a wafer holding plate according to the first embodiment.

【図4】研磨前のウエーハの断面図である。FIG. 4 is a sectional view of a wafer before polishing.

【図5】実施例1の作用説明断面図である。FIG. 5 is an operation explanatory sectional view of the first embodiment.

【図6】研磨後のウエーハの断面図である。FIG. 6 is a cross-sectional view of the wafer after polishing.

【図7】実施例2の要部を示す断面図である。FIG. 7 is a sectional view showing a main part of the second embodiment.

【図8】実施例3におけるウエーハ保持板の概略平面図
である。
FIG. 8 is a schematic plan view of a wafer holding plate in a third embodiment.

【図9】実施例4の要部を示す断面図である。FIG. 9 is a cross-sectional view illustrating a main part of a fourth embodiment.

【図10】実施例5の要部を示す断面図である。FIG. 10 is a sectional view showing a main part of a fifth embodiment.

【図11】実施例6におけるウエーハ保持板の断面図で
ある。
FIG. 11 is a sectional view of a wafer holding plate in a sixth embodiment.

【図12】実施例7におけるウエーハ保持板の断面図で
ある。
FIG. 12 is a sectional view of a wafer holding plate in a seventh embodiment.

【図13】実施例8におけるウエーハ保持板の断面図で
ある。
FIG. 13 is a sectional view of a wafer holding plate according to an eighth embodiment.

【図14】実施例9におけるウエーハ保持板の断面図で
ある。
FIG. 14 is a sectional view of a wafer holding plate in the ninth embodiment.

【図15】実施例10におけるウエーハ保持板の断面図
である。
FIG. 15 is a sectional view of a wafer holding plate in the tenth embodiment.

【図16】実施例11におけるウエーハ保持板の一部断
面図である。
FIG. 16 is a partial sectional view of a wafer holding plate according to an eleventh embodiment.

【図17】ウエーハWを複数枚保持して、バッチ式に研
磨を行うことができる装置の実施例の要部を示す断面図
である。
FIG. 17 is a cross-sectional view showing a main part of an embodiment of an apparatus capable of holding a plurality of wafers W and performing polishing in a batch manner.

【図18】従来例の断面図である。FIG. 18 is a sectional view of a conventional example.

【図19】図18の従来例の作用説明図である。19 is an operation explanatory view of the conventional example of FIG. 18;

【図20】別の従来例の概略断面図である。FIG. 20 is a schematic sectional view of another conventional example.

【図21】好ましい研磨状態を示すもので、(a)は研
磨圧力分布の説明図、(b)は研磨後ウエーハの断面図
である。
FIGS. 21A and 21B show a preferable polishing state, wherein FIG. 21A is an explanatory diagram of a polishing pressure distribution, and FIG. 21B is a cross-sectional view of a polished wafer.

【図22】好ましくない研磨状態の一例を示すもので、
(a)は研磨圧力分布の説明図、(b)は研磨後ウエー
ハの断面図である。
FIG. 22 shows an example of an unfavorable polishing state.
(A) is an explanatory view of a polishing pressure distribution, and (b) is a cross-sectional view of a polished wafer.

【図23】好ましくない研磨状態の別例を示すもので、
(a)は研磨圧力分布の説明図、(b)は研磨後ウエー
ハの断面図である。
FIG. 23 shows another example of an unfavorable polishing state.
(A) is an explanatory view of a polishing pressure distribution, and (b) is a cross-sectional view of a polished wafer.

【符号の説明】[Explanation of symbols]

11 吸着・回転装置 12,13 流路 14 回転軸 15 円環状突起 16 ハウジング 17 環状部材(ゴムシート) 18 取り付け部材 19,81,91 保持板 20 ウエーハ保持領域 21 可動領域 22 吸着孔 23 長溝 24 棒状ゴム 25,26 コネクタ 27 フレキシブルホース 28 貫通孔 29 密閉室 31 研磨定盤 32 研磨布 42 軟質ゴム層 43 渦巻状の溝 44 渦巻状の棒体 45 スポンジ 46 蓋体 47 通気孔 48 渦巻状の貫通孔 49 板体 50 通気孔 51 蓋体 52 貫通孔 53 蓋体 54 マニホールド 61 ウエーハ 62 配線 63 酸化膜 64 酸化膜突起 71 弾性膜 72 胴部 73 流体供給手段 74 回転軸 75 案内板(テンプレート) 76 研磨定盤 82 マウンティングパッド 83 テンプレート 84 研磨定盤 85 研磨布 92 研磨布 A 周辺ダレ B 突起 D 研磨圧力の分布 m,n 境界線 W (半導体デバイスを製造する工程中の)ウエーハ DESCRIPTION OF SYMBOLS 11 Suction / rotation apparatus 12, 13 Flow path 14 Rotation shaft 15 Annular projection 16 Housing 17 Ring member (rubber sheet) 18 Mounting member 19, 81, 91 Holding plate 20 Wafer holding area 21 Movable area 22 Suction hole 23 Long groove 24 Rod shape Rubber 25, 26 Connector 27 Flexible hose 28 Through hole 29 Sealed chamber 31 Polishing surface plate 32 Polishing cloth 42 Soft rubber layer 43 Spiral groove 44 Spiral rod 45 Sponge 46 Cover 47 Air vent 48 Spiral through hole 49 Plate Body 50 Vent Hole 51 Lid Body 52 Through Hole 53 Lid Body 54 Manifold 61 Wafer 62 Wiring 63 Oxide Film 64 Oxide Film Protrusion 71 Elastic Film 72 Body 73 Fluid Supply Means 74 Rotation Axis 75 Guide Plate (Template) 76 Polishing Constant Board 82 Mounting pad 83 Template 84 Polishing constant 85 distribution m of the polishing pad 92 polishing cloth A near sag B protrusion D polishing pressure, n boundary W (in the process of manufacturing the semiconductor device) wafer

───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 文夫 福島県西白河郡西郷村大字小田倉字大平 150番地 信越半導体株式会社 半導体 白河研究所内 (56)参考文献 特開 平2−98927(JP,A) 特開 平5−69310(JP,A) 特開 平6−15563(JP,A) (58)調査した分野(Int.Cl.6,DB名) B24B 37/04 B24B 37/00 H01L 21/304 622 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Fumio Suzuki Inventor 150 Odakura Osaikura, Nishigo-mura, Nishishirakawa-gun, Fukushima Prefecture Shin-Etsu Semiconductor Co., Ltd. Semiconductor Shirakawa Research Laboratories (56) References JP-A-2-98927 (JP, A) JP-A-5-69310 (JP, A) JP-A-6-15563 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) B24B 37/04 B24B 37/00 H01L 21/304 622

Claims (12)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 ウエーハをその背面をウエーハ保持板に
当接させて保持し、該ウエーハ保持板の背面側に加圧流
体を供給することによりウエーハを研磨定盤に圧接させ
て研磨する方法において、ウエーハ研磨時のウエーハ保
持板背面の加圧領域を、ウエーハ保持板がウエーハ背面
と対面する領域と合致させることを特徴とするウエーハ
の研磨方法。
1. A method of polishing a wafer by holding a wafer with its back surface in contact with a wafer holding plate and supplying a pressurized fluid to the back side of the wafer holding plate to bring the wafer into pressure contact with a polishing platen. A method of polishing a wafer, wherein a pressure region on the back surface of the wafer holding plate during wafer polishing is matched with a region where the wafer holding plate faces the back surface of the wafer.
【請求項2】 前記ウエーハ保持板としてウエーハ保持
領域が硬質薄板からなる可撓性の板体を用い、ウエーハ
外周端部を前記可撓性板体の外周端と合致させた状態で
ウエーハをウエーハ保持板に保持することにより、ウエ
ーハ研磨時のウエーハ保持板背面の加圧領域を、ウエー
ハ保持板がウエーハ背面と対面する領域と合致させるこ
とを特徴とする請求項1に記載のウエーハの研磨方法。
2. A wafer holding plate as the wafer holding plate.
Using a flexible plate whose area is made of a hard thin plate,
In a state where the outer peripheral end is matched with the outer peripheral end of the flexible plate body
By holding the wafer on the wafer holding plate, the wafer
The pressurized area on the back of the wafer holding plate during wafer polishing
Make sure that the holding plate matches the area facing the back of the wafer.
2. The method for polishing a wafer according to claim 1, wherein:
【請求項3】 ウエーハをその背面をウエーハ保持板に
当接させて保持し、該ウエーハ保持板の背面側に加圧流
体を供給することによりウエーハを研磨定盤に圧接させ
て研磨する装置において、ウエーハ保持領域を硬質材料
の薄板で構成して可撓性を付与したウエーハ保持板をハ
ウジングの開口部に、伸縮性の環状部材を介して固定し
て前記開口部を密閉し、前記ハウジング内を加圧流体の
供給源に連絡したことを特徴とするウエーハ研磨装置。
3. An apparatus for polishing a wafer by holding the wafer with its back surface in contact with a wafer holding plate and supplying a pressurized fluid to the back surface of the wafer holding plate to bring the wafer into pressure contact with a polishing platen. The wafer holding area is made of a thin plate of a hard material, and a flexible wafer holding plate is fixed to an opening of the housing via an elastic annular member to seal the opening, and the inside of the housing is closed. A wafer polishing apparatus, wherein the wafer is polished to a pressurized fluid supply source.
【請求項4】 前記ウエーハ保持板の中央部を前記ウエ
ーハ保持領域とし、該保持領域の外周端部に前記環状部
材の内周端部を、これら端部の位置を合致させて固定
し、ウエーハ保持板におけるウエーハ保持領域より外周
側部分の可撓性をウエーハ保持領域よりも高くして可動
領域とし、更にウエーハ保持板の外周端部を前記ハウジ
ングに固定したことを特徴とする請求項3に記載のウエ
ーハ研磨装置。
4. A wafer holding region is defined as a central portion of the wafer holding plate, and an inner peripheral end portion of the annular member is fixed to an outer peripheral end portion of the wafer holding region so that the positions of these end portions coincide with each other. 4. The movable plate according to claim 3, wherein the outer peripheral portion of the holding plate has a flexibility higher than that of the wafer holding region than the wafer holding region to form a movable region, and an outer peripheral end of the wafer holding plate is fixed to the housing. The described wafer polishing apparatus.
【請求項5】 前記ウエーハ保持板の全体を同一の材料
で構成し、前記可動領域を、ウエーハ保持板の肉厚をウ
エーハ保持領域より薄くするか、またはウエーハ保持板
に凹部を設けて薄肉にすることにより形成したことを特
徴とする請求項4に記載のウエーハ研磨装置。
5. The entire wafer holding plate is made of the same material, and the movable region is made thinner by making the thickness of the wafer holding plate thinner than the wafer holding region or by providing a concave portion in the wafer holding plate. 5. The wafer polishing apparatus according to claim 4, wherein the wafer polishing apparatus is formed by:
【請求項6】 前記ウエーハ保持板の全体を同一、かつ
均一肉厚の材料で構成し、前記可動領域を、ウエーハ保
持板に貫通孔を設けて形成したことを特徴とする請求項
4に記載のウエーハ研磨装置。
6. The wafer holding plate according to claim 4, wherein the whole of the wafer holding plate is made of a material having the same and uniform thickness, and the movable region is formed by providing a through hole in the wafer holding plate. Wafer polishing equipment.
【請求項7】 前記ウエーハ保持板の外周端部を、軟質
ゴム層を介してハウジングに固定したことを特徴とする
請求項4に記載のウエーハ研磨装置。
7. The wafer polishing apparatus according to claim 4, wherein an outer peripheral end of said wafer holding plate is fixed to a housing via a soft rubber layer.
【請求項8】 前記ウエーハ保持板を多数の真空吸着孔
を形成した吸着板とし、前記真空吸着孔をフレキシブル
ホースを介して真空発生源に連絡したことを特徴とする
請求項3に記載のウエーハ研磨装置。
8. The wafer according to claim 3, wherein the wafer holding plate is a suction plate having a plurality of vacuum suction holes, and the vacuum suction holes are connected to a vacuum source via a flexible hose. Polishing equipment.
【請求項9】 前記ウエーハ保持板の真空吸着孔を貫通
孔として該ウエーハ保持板の中心部と、その周りに多数
形成し、該ウエーハ保持板の背面に、片面に長溝を形成
した軟質ゴムまたは軟質樹脂製の棒体を固定して、全て
の吸着孔を互いに連通させ、中心部の吸着孔をフレキシ
ブルホースを介して真空発生源に連絡したことを特徴と
する請求項8に記載のウエーハの研磨装置。
9. A soft rubber having a plurality of vacuum suction holes formed in the wafer holding plate as through holes and formed around the center of the wafer holding plate, and a long groove formed on one surface on the back surface of the wafer holding plate. 9. The wafer according to claim 8, wherein a rod body made of a soft resin is fixed, all the suction holes are communicated with each other, and the suction hole at the center is connected to a vacuum generating source via a flexible hose. Polishing equipment.
【請求項10】 前記ウエーハ保持板の真空吸着孔を貫
通孔として形成し、ウエーハ保持板の背面における真空
吸着孔配設部分をスポンジまたは弾性繊維の集合体で被
覆すると共に、該被覆体を軟質ゴム製の蓋体で被覆し、
更に該蓋体の中心部に設けた通気孔をフレキシブルホー
スを介して真空発生源に連絡したことを特徴とする請求
項8に記載のウエーハ研磨装置。
10. A vacuum suction hole of the wafer holding plate is formed as a through hole, and a portion where the vacuum suction hole is provided on the back surface of the wafer holding plate is covered with a sponge or an aggregate of elastic fibers. Covered with a rubber lid,
9. The wafer polishing apparatus according to claim 8, wherein a ventilation hole provided at a central portion of the lid is connected to a vacuum generation source via a flexible hose.
【請求項11】 前記ウエーハ保持板の真空吸着孔を貫
通孔として形成し、渦巻状の貫通孔を形成した軟質ゴム
製の板体をウエーハ保持板の背面に重ね合わせて前記真
空吸着孔を渦巻状の貫通孔に連通させ、更に中心部に通
気孔を形成した軟質ゴム製の蓋体を前記板体上に重ね合
わせて前記通気孔を渦巻状の貫通孔に連通させ、前記通
気孔をフレキシブルホースを介して真空発生源に連絡し
たことを特徴とする請求項8に記載のウエーハ研磨装
置。
11. A vacuum suction hole of the wafer holding plate is formed as a through hole, and a soft rubber plate having a spiral through hole is superimposed on the back surface of the wafer holding plate, and the vacuum suction hole is swirled. A flexible rubber lid having a ventilation hole formed in the center is overlapped on the plate body, and the ventilation hole is communicated with the spiral through hole, and the ventilation hole is flexible. 9. The wafer polishing apparatus according to claim 8, wherein the apparatus is connected to a vacuum source via a hose.
【請求項12】 前記ウエーハ保持板にウエーハ保持領
域を複数形成し、該ウエーハ保持領域を、それぞれ個別
に伸縮性の環状部材を介して前記ハウジングに固定した
ことを特徴とする請求項3〜11の何れか1項に記載の
ウエーハ研磨装置。
12. The wafer holding area a plurality formed in the wafer holding plate, claim the wafer holding region, respectively, characterized in that fixed to the housing through the individual elastic annular member 3 to 11 The wafer polishing apparatus according to any one of the above.
JP28439393A 1993-10-18 1993-10-18 Wafer polishing method and polishing apparatus Expired - Fee Related JP2891068B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP28439393A JP2891068B2 (en) 1993-10-18 1993-10-18 Wafer polishing method and polishing apparatus
US08/283,152 US5584746A (en) 1993-10-18 1994-08-03 Method of polishing semiconductor wafers and apparatus therefor
DE69419479T DE69419479T2 (en) 1993-10-18 1994-08-31 Process for grinding semiconductor wafers and device therefor
EP94306406A EP0653270B1 (en) 1993-10-18 1994-08-31 Method of polishing semiconductor wafers and apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28439393A JP2891068B2 (en) 1993-10-18 1993-10-18 Wafer polishing method and polishing apparatus

Publications (2)

Publication Number Publication Date
JPH07112364A JPH07112364A (en) 1995-05-02
JP2891068B2 true JP2891068B2 (en) 1999-05-17

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