JP2790878B2 - Dry process equipment - Google Patents

Description

The present invention relates to a dry process apparatus using a magnetron discharge which can be used as a CVD apparatus, an etching apparatus, and a sputtering apparatus, and in particular, faces two types of electrodes facing each other. The present invention relates to a dry process apparatus in which magnetron discharge is generated in a space between electrodes facing each other alternately.

[Conventional technology]

FIG. 15 is an explanatory diagram showing an outline of a configuration of an example of a dry etching apparatus as a conventional dry process apparatus.

In FIG. 15, reference numeral 1 denotes a reaction chamber, and 2 denotes a cathode electrode provided on the lower surface of the reaction chamber 1 and insulated by an insulator 9. The substrate 3 is fixed to the upper surface thereof. A reaction gas flows into the reaction chamber 1, and an exhaust gas 5 is discharged by a vacuum pump. A high frequency power Ph having a frequency of, for example, 13.56 MHz is extracted from the high frequency power supply 6 and supplied to the cathode electrode 2 via the blocking capacitor 7. A portion of the reaction chamber 1 above and around the cathode electrode 2 functions as an anode electrode 8 and is grounded. Anode electrode 8 with high frequency power Ph grounded
Is supplied to the cathode electrode 2 so that
10 is formed vertically on the cathode electrode 2. Around the reaction chamber 1, three pairs of solenoids 12 for forming a magnetic field 11 in a direction substantially parallel to the cathode electrode 2 are arranged.

FIG. 16 is an explanatory diagram showing an outline of the configuration of another example of a dry etching apparatus as a dry process apparatus.

In this conventional example, the anode electrode 8 is arranged at a sufficient distance of about 70 mm above the cathode electrode 2 so as to be parallel to the cathode electrode 2 and is grounded.
The configuration is the same as that of the conventional example shown in FIG.

 These conventional devices operate as follows.

After the substrate 3 to be etched is mounted on the cathode electrode 2, the inside of the reaction chamber 1 is sufficiently evacuated by a vacuum pump, and the reaction gas 4 is introduced into the reaction chamber 1 to a gas pressure of about 10 mTorr. The high-frequency power Ph is applied to the cathode electrode 2 by 6 to excite the reaction gas into a plasma comprising positive ions and negative electrons. The supply of the high-frequency power Ph forms a high-frequency electric field 10 in a direction perpendicular to the cathode electrode 2.

On the other hand, a magnetic field 11 is formed in a direction parallel to the cathode electrode 2 using a pair of solenoid coils 12. The high-frequency electric field 10 and the magnetic field 11 orthogonal to each other formed in the space above the substrate 3 cause the light-mass electrons to generate a spiral cycloidal motion with a small orbit radius in a direction perpendicular to the lines of magnetic force, resulting in neutral neutrality. Violently collides with the etching gas to generate a high-density plasma, and a magnetron discharge 13 is generated in this space.

By the way, electrons in a magnetic field drift in a direction perpendicular to the magnetic field due to Lorentz force, so that a one-way distribution occurs in the plasma density. Therefore, three pairs of solenoid coils are arranged around the reaction chamber 1, and an alternating rotating current is caused to flow in order to generate an apparent rotating magnetic field, thereby averaging the distribution of the plasma density to make it seem uniform.

Usually, the ionization rate of the reaction gas by high-frequency discharge excitation is
Although it is as small as about 10 ^{-4, the} ionization rate by magnetron discharge is increased to about 10 ^-2, which is more than two orders of magnitude.

[Problems to be solved by the invention]

However, in such a conventional apparatus, when the magnetic field is not rotated, a uniform flow occurs in the distribution of the plasma density, so that uniform etching is difficult. The uniformity variation was as large as ± 30% or more. Further, since the DC self-bias voltages applied to the cathode electrode 2 and the anode electrode 8 are significantly different, it is possible to install one or more substrates 3 on the cathode electrode 2 and the anode electrode 8 respectively and simultaneously etch two or more substrates. could not.

An object of the present invention is to solve the problem that etching cannot be performed uniformly under a fixed magnetic field as described above and that the etching cannot be performed on both the cathode and anode electrodes 2 and 8 under relatively similar conditions at the same time. By providing a dry process apparatus capable of simultaneously etching two or more substrates on electrodes of two kinds of polarities at high speed and with good uniformity under the above conditions, and forming a thin film by selecting a method of use. is there.

[Means for solving the problem]

In order to solve the above problems and achieve the above object, the invention according to claim 1 is to arrange at least two electrodes (21, 22) in a reaction chamber (1) to face each other,
At least one or more substrates (3) are installed on at least one of the opposing inner surfaces of the electrodes (21, 22), and a magnetic field is applied so as to be substantially parallel to each of the electrodes (21, 22). (1
1) is applied, and AC power of the same frequency is supplied to the two opposing electrodes (21, 22) through the blocking capacitor (7) while synchronizing the phases thereof under an arbitrary phase difference. The distance between two opposing electrodes (21, 22) is set to a distance about the mean free path of electrons, and a magnetron discharge is generated in the space between the two opposing electrodes (21, 22). It is characterized by.

According to a second aspect of the present invention, in the dry process apparatus according to the first aspect, AC power of the same frequency is supplied to two opposing electrodes (21, 22) with the phase difference being 0 ° or 180 °, respectively. The reaction chamber (1) or another electrode inside the reaction chamber (1) is grounded.

According to a third aspect of the present invention, in the dry process apparatus according to the first or second aspect, AC power having an arbitrary power ratio is supplied to the two opposing electrodes (21, 22). .

According to a fourth aspect of the present invention, in the dry process apparatus according to the first or third aspect, the phase difference of the AC power is 0 ゜ ± 40.
゜ or 180 ゜ ± 40 ゜.

According to a fifth aspect of the present invention, in the dry processing apparatus according to any one of the first to fourth aspects, two electrodes (21, 21) facing each other are provided from two independent AC power supplies (16, 26) whose phases are synchronized. , 22) are supplied with AC power.

According to a sixth aspect of the present invention, in the dry process apparatus according to any one of the first to fourth aspects, the power generated by one AC power supply (6) is divided into two powers and supplied. .

The invention according to claim 7 is the invention according to claims 12, 3, 4, 5, and 6.
Wherein the reaction chamber (1) or another electrode inside the reaction chamber (1) is grounded.

In the invention according to claim 8, at least two electrodes (21, 22) are arranged in the reaction chamber (1) so as to face each other, and the inside of the at least two electrodes (21, 22) facing each other. At least one or more substrates (3) are placed on at least one of the surfaces, a magnetic field (11) is applied so as to be substantially parallel to each of the electrodes (21, 22), and a negative DC voltage is applied to each of the electrodes (21). 21, 22), and a positive DC voltage or a ground voltage is applied to the reaction chamber (1) or another electrode inside the reaction chamber (1), and the two electrodes (21, 22) facing each other are applied. Is set to a distance about the mean free path of electrons, and a magnetron discharge is generated in the space between the electrodes (21, 22).

According to a ninth aspect of the present invention, in the dry process apparatus according to the eighth aspect, a negative DC voltage is applied to two opposing electrodes (21, 22) at an arbitrary power ratio.

According to a tenth aspect of the present invention, in the dry process apparatus according to any one of the first to ninth aspects, the total number of electrodes is three.
It is characterized in that the number is more than one.

According to an eleventh aspect of the present invention, in the dry process apparatus according to the tenth aspect, the intervals between the two facing electrodes (21, 22) are all equal and parallel to each other.

According to a twelfth aspect of the present invention, in the dry process apparatus according to any one of the first to eleventh aspects, a distance between two opposing electrodes (21, 22) is in a range of 1 cm to 5 cm. And

The numbers in parentheses represent the reference numerals used in the embodiments described with reference to the drawings.

(Operation)

In the dry process apparatus according to the first aspect,
At least one or more substrates 3 are installed on at least one or more surfaces inside each of the electrodes 21 and 22 facing each other. After sufficiently exhausting the inside of the reaction chamber 1 with the exhaust device, the reaction gas 4 is introduced. A magnetic field 11 is applied so as to be substantially parallel to the electrodes 21 and 22.

The power Ph of the AC power supply 6 is supplied to each of the electrodes 21 and 22 via a blocking capacitor, and the applied power Ph
Thus, an electric field 10 is formed on the substrate 3. Electric field 10 and magnetic field 11
Are orthogonal, a magnetron discharge 13 is formed. Plasma is generated by this magnetron discharge 13, and a part of the light electrons in the plasma flows out to each of the electrodes 21 and 22,
It is stored by the blocking capacitor 7 and forms a negative DC self-bias.

With the formation of this DC self-bias voltage, each electrode
An ion sheath having a high positive ion density is formed near 21, 22. Although a high concentration of positive ions is present in the ion sheath, the mobility of the positive ions is very small, so that the electrical resistance of the ion sheath increases and a strong electric field is applied to each of the electrodes 21 and 22.
Is applied vertically. The directions of the formed electric fields are opposite to each other toward the electrodes 21 and 22.

Since the directions of the magnetic fields 11 are the same and the directions of the electric fields 10 are opposite to each other, the directions of the Lorentz forces acting on the secondary electrons emitted from the electrodes 21 and 22 are reversed. In the vicinity of the electrode 21, the back side of the paper (the other side)
Has a high plasma density and decreases on the front side (front side) of the drawing. Conversely, the plasma density on the other side is low near the other electrode 22, and high on the near side.

Assuming that the distance between the electrodes 21 and 22 is sufficiently short and the distance is about the mean free path of electrons in the space between the electrodes 21 and 22,
The plasmas formed by the one electrode 21 and the other electrode 22 are mixed with each other without being separated, and the distribution of the plasma density becomes substantially uniform. Therefore, substantially uniform plasma can be formed without rotating the magnetic field 11.
The mean free path refers to the distance that electrons can move freely until they collide in gas molecules.

Further, if the distance between the electrodes 21 and 22 is short and is about the diameter of the rotational motion of the electron around the line of magnetic force (that is, about twice the Larmor radius), the ion sheath formed on the electrode surface will The electrons that jumped into are repelled by the strong electric field and returned in the opposite direction. Therefore, there is a high probability that electrons rotating between the narrow electrodes 21 and 22 continue to rotate until they collide with gas molecules without drastically drifting left and right in the space. Assuming that the pressure of the reaction gas 4 introduced into the space between the electrodes 21 and 22 and exhausted by the pressure is such that the distance of one rotation of the electrons becomes about the mean free path, the electrons are generated under the plasma generating condition. It rotates freely about one rotation and collides with gas molecules. Since the mean free path of electrons is inversely proportional to the gas pressure, the gas pressure must be equal to or lower than the above pressure in order to allow the electrons to rotate one or more rotations.

That is, if the distance between the electrodes 21 and 22 is set to a distance about the mean free path of the electrons or less, the electrons rotate almost without drifting left and right in the space between the electrodes 21 and 22. Then, it collides with gas molecules in the space to generate plasma consisting of ions and radicals. In other words, when the distance between the electrodes 21 and 22 is narrow, many electrons flow into the narrow space and efficiently collide with gas molecules, so that a plasma having a higher density than the conventional magnetron plasma is generated, and Since the drift of electrons in the direction is small, plasma with good uniformity is generated. Since the ionization rate of the plasma by the magnetron discharge is higher than the ionization rate of the plasma by the ordinary AC discharge by two orders of magnitude or more, the dry etching according to the present invention is one time smaller than the conventional one.
It is faster than an order of magnitude.

In this apparatus, if a film forming gas such as SiH ₄ is used as the reaction gas 4, it can be used as a CVD apparatus, if an etching gas such as CF ₄ is used, it can be used as an etching apparatus, and if a sputtering gas such as Ar is used, it can be used as a sputtering apparatus. It can be used.

In the dry process apparatus according to the second aspect, the alternating-current power Ph composed of the alternating-current power supply 6 is supplied to the electrodes 21 and 22 through the blocking capacitor 7 in substantially the same phase or in substantially the opposite phase. The other electrode inside the reaction chamber 1 or the reaction chamber is grounded. A magnetic field 11 is applied between the electrodes 21 and 22 so as to be substantially parallel to each other as in the case of the first embodiment. The principle of plasma generation is that secondary electrons are emitted from the electrodes 21 and 22 by the collision of positive ions, and are captured while rotating circularly around the magnetic lines of force formed in the space between the electrodes 21 and 22, Since the rotating electrons collide with the reaction gas 4 and are ionized, the plasma density distribution becomes substantially uniform in a substantially uniform magnetic field, and the ionization rate of the plasma by the magnetron discharge 13 is reduced by the ordinary AC discharge. , Which can be two orders of magnitude higher than the plasma ionization rate, and can perform dry etching at 12 orders of magnitude faster than in the past.

Further, in the device according to the third, fifth and sixth aspects, two AC powers Ph1 and Ph2 synchronized with the same frequency, an arbitrary power ratio and an arbitrary phase difference are passed through the blocking capacitors 7 to the respective electrodes 21 and 22 respectively. And applied power Ph1, Ph2
By the substrate 3. An electric field 10 is formed thereon. Electric field is power Ph
1, the direction changes according to the phase difference and power ratio of Ph2, but the magnetron discharge is formed by the action of the electric field and the magnetic field orthogonal to the electric field 10 in accordance with the component orthogonal to the magnetic field 11.

The dry process device according to claim 8 or 9 uses the AC power supply 6 in the above-described device,
This is a case where a DC power supply is used in place of the AC power supply 6. In the case where a DC power supply is used, the blocking capacitor 7 is unnecessary, and a negative voltage is directly applied to each of the electrodes 21 and 22 so that the reaction chamber 1
The same can be said, except that a positive voltage or a ground voltage is directly applied to the inside or another inside.

〔Example〕

 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is an explanatory view showing the outline of the configuration of a first embodiment of the apparatus of the present invention. Components similar to those of the conventional apparatus shown in FIGS. 15 and 16 are denoted by the same reference numerals. I have. 21 is an upper electrode and 22 is a lower electrode.

In the first embodiment, one end of the high frequency power supply 6 is not grounded in order to stabilize the plasma discharge, but may be grounded. When one end of the high-frequency power supply 6 is not grounded, the reaction chamber 1 is preferably grounded. However, when one end of the high-frequency power supply 6 is grounded, the reaction chamber 1 is preferably in an electrically floating state.
In the case shown in the figure, in order to stabilize the supply potential, the average potential of the two outputs of the high frequency power supply 6 is preferably set to 0 volt.

In the first embodiment, the number of the high-frequency power supplies 6 is one. However, each of the two power supplies is synchronized with a phase difference of 180 °, that is, in opposite phase, and is controlled to the same power. Even if high-frequency power is supplied to the electrodes 21 and 22 via the blocking capacitor 7, the same operation and effect can be obtained. In this case, it is possible to change the amount of power supplied to the upper and lower electrodes and the phase difference, and by appropriately adjusting the ratio and phase difference of the amount of power supplied between the upper and lower electrodes,
It is possible to optimize the distribution of the plasma generated between 21 and 22.

Further, the solenoid coil 12 for applying a magnetic field may be another magnetic field applying means, for example, a combination of a bar-shaped permanent magnet, and any structure may be used as long as it can apply a substantially parallel magnetic field 11 on the substrate 3. . Even if the magnetic field is fixed, sufficient plasma density uniformity can be obtained.
If rotated so that they are parallel to the two surfaces, they are further averaged and the uniformity is improved.

Although the substrate 3 is arranged on each of the three electrodes 21 and 22, it is not always necessary to arrange them on both the electrodes 21 and 22, but may be arranged on only one of the electrodes. Since it is desirable that the upper electrode 21 and the lower electrode 22 are as symmetrical as possible, they are arranged in parallel and the area is made as close to 1: 1 as possible. At that time, the blocking capacitors 7, 7 for the upper electrode 21 and the lower electrode 22
Are preferably as equal as possible.

In the first embodiment, the substrate 3 is disposed on the upper electrode 21 and the lower electrode 22. After sufficiently exhausting the reaction chamber 1 with a vacuum pump, the reaction gas 4 is introduced and adjusted to a pressure of about 1 to 100 mTorr or less. Solenoid coil
A current is applied to the substrate 12, and a magnetic field 11 having an intensity of about 50 to 500 Gauss is applied on the substrate 3 so as to be substantially parallel to the electrodes 21 and 22. The power Ph of the high frequency power supply 6 is supplied to the upper electrode 21 and the lower electrode 22 through the blocking capacitor 7 in opposite phases. An electric field 10 is formed on the substrate 3 by the applied power Ph. Since the electric field 10 and the magnetic field 11 are orthogonal to each other, a magnetron discharge (shown by a broken line) 13 is formed.
Plasma is generated by the magnetron discharge 13, and a part of light electrons in the plasma flows out to the upper electrode 21 and the lower electrode 22, and is accumulated by the blocking capacitor 7, thereby forming a negative DC self-bias voltage.

With the formation of the DC self-bias voltage, an ion sheath having a high positive ion density is formed near the upper electrode 21 and the lower electrode 22. Although a high concentration of positive ions is present in the ion sheath, the mobility of the positive ions is very small, so that the electrical resistance of the ion sheath increases and a strong electric field is applied vertically to each of the electrodes 21 and 22. become. The direction of the electric field 10 corresponding to the DC self-bias voltage formed by the ion sheath portion of the upper and lower electrodes 21 and 22 is the direction of the electrodes 21 and 2 respectively.
Towards 2, that is, upward and downward, they are opposite to each other. Positive ions are accelerated by this electric field and collide with the upper and lower electrodes 21 and 22 to emit secondary electrons. Since the directions of the magnetic fields 11 are the same and the directions of the electric fields 10 are opposite, the directions of the Lorentz forces acting on the secondary electrons emitted from the electrodes 21 and 22 are opposite, and the vicinity of the upper electrode 21 In this case, the plasma density on the back side (the other side) of the paper surface is high, and decreases on the front side (the front side) of the paper surface. Conversely, the plasma density on the other side is low near the lower electrode 22, and is high on the near side.

If the distance between the two electrodes 21 and 22 is sufficiently short and the distance is about the mean free path of the electrons in the space of each electrode 21 and 22, the plasma formed by the upper electrode 21 and the lower electrode 22 will not separate. The distribution of the plasma densities becomes almost uniform. Therefore, substantially uniform plasma can be formed without rotating the magnetic field. Of course, the uniformity is further improved by rotating the magnetic field. The interval between the electrodes 21 and 22 is slightly narrowed, and is preferably about 1 cm to 5 cm.

Since the ionization rate of the plasma by the magnetron discharge is higher than the ionization rate of the plasma by the normal high-frequency discharge by at least two orders of magnitude, the dry etching by the apparatus according to the first embodiment can be performed at least one order of magnitude faster than the conventional one.

FIG. 2 is an explanatory view showing the outline of the configuration of a second embodiment of the device of the present invention, and the same reference numerals are given to the same components as those of the device shown in FIG.

In this second example, the number of upper electrodes 21 of the first embodiment is two, the number of lower electrodes 22 is two, and upper and lower electrodes 21 and 22 are alternately arranged in parallel. 21, 22 are connected respectively. In order to equalize the state of plasma generated between the electrodes 21 and 22, adjacent electrodes
Equalize the spacing between 21,22, make the area of each electrode almost equal, and block capacitor for upper electrode and lower electrode
It is preferable to make the capacities of 7, 7 substantially equal.

The use, operation procedure and operation state of this apparatus are almost the same as those of the dry process apparatus shown in FIG. This apparatus can process six substrates 3 at a time,
By disposing two or more substrates 3 on the surfaces of the electrodes 21 and 22, it becomes possible to process twelve or more substrates 3 at a time. The number of all the electrodes 21 and 22 may be three or five or more. In this case, the upper electrodes 21 and the lower electrodes 22 need to be arranged alternately. The electrodes 21 and 22 are preferably parallel to each other, but need not necessarily be flat, but may be curved. The method of supplying the high-frequency power Ph to each of the electrodes 21 and 22 is the same as in the first embodiment, and it is preferable that the reaction chamber 1 is grounded or floated according to the supply method.

FIG. 3 is an explanatory view showing the outline of the configuration of a third embodiment of the apparatus of the present invention. Components similar to those of the apparatus shown in FIGS. 1 and 2 are denoted by the same reference numerals. It is.

In the third embodiment, the upper electrode 21 and the lower electrode 22 are electrically connected to have the same potential, and the high-frequency power Ph is synchronized with the respective electrodes 21 and 22 from the high-frequency power source 6 via the blocking capacitor 7 in the same phase. Supply. The reaction chamber 1 is grounded. The high-frequency power supplies 6 are synchronized in substantially the same phase, and the same operation and effect can be obtained even if a pair of high-frequency power supplies controlled to the same output is used. In this case, the amount of power supplied to the upper and lower electrodes from the two high-frequency power supplies via the blocking capacitor can be changed. , 22 can be optimized.
When one end of each high-frequency power supply is grounded, the reaction chamber is preferably in a grounded state. The method of applying the magnetic field 11 is to apply the magnetic field 11 using the solenoid coil 12 so as to be parallel to the electrodes 21 and 22 as in the first and second embodiments.
In order to improve the uniformity of the plasma and generate high-density plasma, it is preferable to make the interval between the electrodes 21 and 22 slightly narrower, and preferably about 1 cm to 5 cm. With such an interval, the distance between the electrodes 21 and 22 becomes about the mean free path of electrons. The same effect can be obtained even if the electrodes 21 and 22 are electrically connected in the reaction chamber 1 by a conductive wire or a conductive plate.

As for the power supply, the high frequency power supply 6 is used in the first and second embodiments, but a DC power supply can be used instead of the high frequency power supply 6 in the present embodiment. When a DC power supply is used, the blocking capacitor 7 is unnecessary, and a negative voltage is applied directly to each of the electrodes 21 and 22, and a positive voltage is directly applied to the reaction chamber 1 or another electrode inside the reaction chamber 1. Substrate 3 has electrodes 21 and 2
Although it is possible to ground one or more of the two, only one may be provided for either of the electrodes.

The conditions for plasma generation are almost the same as the conditions shown in the first and second embodiments.

In the third embodiment, only two electrodes 21 and 22 are used.
As in the embodiment, three or more sheets may be used.
Are preferably electrically connected to each other so that they have the same potential, the areas of the respective electrodes are substantially equal, the intervals between the electrodes are substantially equal, and the electrodes are preferably arranged in parallel. In this case, it is possible to install four or more substrates 3 on opposing surfaces.

FIG. 4 is an explanatory diagram showing an outline of the configuration of a fourth embodiment of the apparatus of the present invention. Components similar to those of the apparatus shown in FIGS. 1, 2, 3, and 16 are denoted by the same reference numerals. I have. 21 is an upper electrode and 22 is a lower electrode.

In the fourth embodiment, high-frequency power supplies 26 and 16 for supplying high-frequency powers Ph2 and Ph1 independently to the upper electrode 21 and the lower electrode 22 are provided. These two high frequency power supplies 26,
16 is controlled by a phase shifter 17 so as to oscillate at the same frequency under an arbitrary phase difference. The high frequency powers Ph1 and Ph2 can be controlled independently.

Further, the solenoid coil 12 for applying a magnetic field may be another magnetic field applying means, for example, a combination of rod-shaped permanent magnets, and may have any configuration as long as it can apply a substantially parallel magnetic field 11 on the substrate 3. . Even if the magnetic field is fixed, sufficient plasma density uniformity can be obtained.
If rotated so as to be parallel to the planes 21 and 22, the average is further improved and the uniformity is improved.

The substrate 3 is disposed on each of the two electrodes 21 and 22. However, the substrate 3 does not necessarily need to be disposed on both the electrodes 21 and 22, and may be disposed on only one of the electrodes. It is preferable that the upper electrode 21 and the lower electrode 22 are as symmetrical as possible and have the same area.
May be different.

In the fourth embodiment, the substrate 3 is disposed on the upper electrode 21 and the lower electrode 22. After sufficiently exhausting the reaction chamber 1 with a vacuum pump, a reaction gas is introduced into the reaction chamber 1 and adjusted to have a pressure of about 1 to 100 mTorr or less. An electric current is applied to the solenoid coil 12 to apply a magnetic field 11 having a strength of about 50 to 500 gauss on the substrate 3 so as to be substantially parallel to the electrodes 21 and 22.

The powers Ph1 and Ph2 of the high frequency power supplies 16 and 26 synchronized with an arbitrary phase difference by the phase shifter 17 are supplied to the electrodes 21 and 22 via the blocking capacitor 7 with an arbitrary phase difference and an arbitrary power ratio, respectively. An electric field is formed on the substrate 3 by the applied powers Ph1 and Ph2. The direction of the electric field changes according to the phase difference between the powers Ph1 and Ph2 and the power ratio, but a magnetron discharge is formed by the action of the electric field and the magnetic field orthogonal to the component orthogonal to the magnetic field 11 according to the component of the electric field.

FIG. 5 is an explanatory view showing the outline of the configuration of a fifth embodiment of the apparatus of the present invention, and the same reference numerals are given to the same components as those of the apparatus shown in FIG.

In the fifth embodiment, the number of upper electrodes 21 in the fourth embodiment is set to two, the number of lower electrodes 22 is set to two,
21 and 22 are arranged alternately in parallel, and upper and lower electrodes 21 and 22 are connected respectively. In order to equalize the state of the plasma generated between the electrodes 21 and 22, the adjacent electrodes 21 and 2
It is preferable to make the intervals between the two equal, make the areas of the electrodes 21 and 22 substantially equal, and make the capacities of the blocking capacitors 7 and 7 for the upper electrode and the lower electrode substantially equal.

The use, operation procedure and operation state of this apparatus are almost the same as those of the dry process apparatus shown in FIG. This apparatus can process six substrates 3 at a time,
By disposing two or more substrates 3 on the surfaces of the electrodes 21 and 22, it becomes possible to process twelve or more substrates 3 at a time. The number of all the electrodes 21 and 22 may be three or five or more. In this case, the upper electrodes 21 and the lower electrodes 22 need to be arranged alternately. The electrodes 21 and 22 are preferably parallel to each other, but need not necessarily be flat, but may be curved. The distance between the electrodes 21 and 22 and the method of supplying the high-frequency powers Ph1 and Ph2 to the electrodes 21 and 22 are the same as in the fourth embodiment.

FIG. 6 is an explanatory view showing the outline of the configuration of a sixth embodiment of the apparatus of the present invention. Components similar to those of the apparatus shown in FIGS. 4 and 5 are denoted by the same reference numerals. It is.

In the sixth practical example, the power supplied to the upper and lower electrodes 21 and 22 is divided by the power Ph generated by one high-frequency power source 6 into a power divider.
It is distributed and supplied via 27. The configuration of the power distributor 27 includes, for example, a combination of a 1-input 2-output power distribution transformer, a phase adjuster including a coil and a variable capacitor, and a matching box for impedance matching with the upper and lower electrodes. The output stage in the matching box also contains a blocking capacitor 7. There are several types of combinations of the number of power distribution transformers, phase adjusters, matching boxes used, connection methods, and order, but all devices that can arbitrarily control the power ratio and phase difference for one input are all available. It can be regarded as an equivalent device. The power distributor does not necessarily require all of the power distribution transformer, the phase adjuster, and the matching box. For example, even if the output from one matching box is simply split into two, the same effect can be obtained. Can be However, in this case, it is not easy to control the power distribution ratio and the phase difference, and it is not easy to optimize the plasma generation conditions. Suitable for relatively simple, low-cost devices with few parts. However, a device that can obtain two outputs having an appropriate power ratio and a phase difference with respect to one input can be regarded as a power distributor, no matter how simple the device is.

By using the power distributor 27, the high frequency power
Can be distributed to two powers having an arbitrary power ratio and a phase difference between Ph1 and Ph2, and can be supplied to the lower electrode 22 and the upper electrode 21. As described above, even with one high-frequency power supply 6, the same operation as in the case of using the two high-frequency power supplies 16 and 26 can be performed similarly to the fourth embodiment. Therefore, except that only one high-frequency power source is used, the use, operation procedure and operation state of this apparatus are almost the same as those of the dry process apparatus shown in FIG.

FIG. 7 is an explanatory view showing the outline of the configuration of the seventh embodiment of the apparatus of the present invention, and the same reference numerals are given to the same components as those of the apparatus shown in FIG.

In the seventh embodiment, as in the dry process apparatus of the fifth embodiment, the number of upper electrodes 21 and the number of lower electrodes 22 of the sixth embodiment are set to two, and the upper and lower electrodes 21 and 22 are parallel. And the upper and lower electrodes 21 and 22 are connected to each other. In order to equalize the state of the plasma generated between the electrodes 21 and 22, the intervals between the adjacent electrodes 21 and 22 are made equal, the area of each electrode is made almost equal, and the blocking capacitors for the upper electrode and the lower electrode are formed. Preferably, the capacities are approximately equal.

The use, operation procedure and operation state of this device are almost the same as those of the dry process shown in FIG. The number and arrangement of the electrodes of this apparatus, the number and arrangement of the substrates 3 placed on the electrodes, and the method of supplying the high-frequency powers Ph1 and Ph2 to the electrodes 21 and 22 are the same as in the fifth embodiment. It is.

FIG. 8 is an explanatory diagram showing an outline of the configuration of an eighth embodiment of the apparatus of the present invention, and the same reference numerals are given to the same components as those of the apparatus shown in FIG.

In the eighth embodiment, two DC power supplies 25 and 15 are used to supply power to the upper electrode 21 and the lower electrode 22. In this case, unlike the fourth embodiment and the like, the blocking capacitor 7 is unnecessary, and the DC power
The negative side of 5 is directly connected to the lower electrode 22 and the upper electrode 21. The positive sides of the DC power supplies 15 and 25 are connected to the reaction chamber 1 or grounded. When the DC power supply is grounded, the reaction chamber 1 is also grounded. In order to arbitrarily control the power supplied to the upper and lower electrodes 21 and 22, the output voltages of the DC power supplies 25 and 15 can be arbitrarily controlled. In the eighth embodiment, two DC power supplies are used in order to arbitrarily control the power supplied to the upper and lower electrodes 21 and 22. However, two DC power supplies are not necessarily required. The output is divided into two parts by resistance division, etc.
The same operation can be performed by supplying them to 1,22.

The conditions for plasma generation are almost the same as the conditions shown in the fourth and sixth embodiments.

FIG. 9 is an explanatory view showing the outline of the configuration of a ninth example of the apparatus of the present invention, and the same reference numerals are given to the same components as those of the apparatus shown in FIGS. 5 and 8. I have.

In the ninth embodiment, as in the dry process apparatus of the fifth embodiment, the number of upper electrodes 21 is two, the number of lower electrodes 22 is two, and the upper and lower electrodes 21 and 22 are parallel. And the upper and lower electrodes 21 and 22 are connected to each other. In order to make the state of the plasma generated between the electrodes 21 and 22 equal, it is preferable to make the interval between the adjacent electrodes 21 and 22 equal and make the area of each electrode substantially equal.

The use, operation means and operation state of this apparatus are almost the same as those of the dry process apparatus shown in FIG. The number and arrangement of the electrodes of this apparatus, the number and arrangement of the substrates 3 placed on the electrodes, and the method of supplying DC power to the electrodes 21 and 22 are the same as in the eighth embodiment.

In each of the above embodiments, when the interval between the electrodes 21 and 22 is changed, the following differences occur.

FIG. 10 (a) shows the state of movement of electrons in plasma when the distance between the electrodes 21 and 22 is wide, for example, about 60 to 100 mm. Since the distance between the electrodes is sufficiently large, the secondary electrons emitted from the electrodes 21 and 22 drift right and left due to the action of the orthogonal electric and magnetic fields. Such a movement is called a cycloid movement. The secondary electrons emitted from the upper electrode 21 drift to the right and the secondary electrons emitted from the lower electrode 22 drift to the left.
The secondary electrons emitted from the upper and lower electrodes 21 and 22 respectively
In the vicinity, the plasma is separated and generated near the upper and lower electrodes. However, the distance between the electrodes is such that the electrons can travel with almost no collision in terms of linear motion, that is,
As long as the electron has a mean free path, the plasmas are mixed with each other without being separated, and the distribution of the plasma density becomes substantially uniform. The mean free path of an electron refers to an average distance that an electron can move around before colliding in a gas molecule.

Further, FIG. 10 (b) shows a case where the distance between the electrodes 21 and 22 is about twice (diameter) the rotating radius of electrons, that is, the Larmor radius. FIG. 10 (b) shows an example in which the electrode interval is 10 to 30.
If the magnitudes of the magnetic field and the self-bias voltage are 150 Gauss and 200 V, which are commonly used values, for example, the radius of rotation of electrons, that is, the Larmor radius, is approximately 4 mm, and the diameter of the rotational motion is approximately 8 mm. Become. Electrons that rotate around the line of magnetic force with a diameter of about 8 mm have a high probability of approaching the opposing electrode during movement between the electrodes of about 10 to 30 mm. Since the ion sheath is formed on the electrode surface of the counter electrode, the electrons jumping into the ion sheath are repelled by the strong electric field and returned in the opposite direction. Therefore, there is a high probability that electrons rotating between narrow electrodes continue to rotate until they collide with gas molecules without drifting largely in the horizontal direction in the space.

One circumference of a circle having a diameter of 8 mm is about 25 mm. The pressure of the gas at which the mean free path of electrons is 25 mm varies slightly depending on the type of gas, but is around 10 mTorr. Therefore, in the gas of 10 mTorr, the electrons freely rotate about one rotation under the above-mentioned plasma generation conditions and collide with gas molecules. Since the mean free path of the electrons is inversely proportional to the gas pressure, the gas pressure must be 10 mT to enable the electrons to rotate more than one revolution.
Must be around orr or less. That is, when the electrode interval is about 10 mm to 30 mm with respect to the mean free path of 25 mm, when the gas pressure is about 10 mTorr or less, the electron continues to rotate almost without drifting in the space between the two electrodes 21 and 22 left and right. And collides with gas molecules in the space to generate plasma composed of ions and radicals.

That is, in FIG. 10 (b), since the drift of the electrons in the left-right direction is small, the electrons emitted from each of the electrodes 21 and 22 continue to rotate around the space between each of the electrodes 21 and 22 around the magnetic field lines, and the efficiency is improved. It collides with gas molecules and generates plasma with better uniformity.

As described above, as shown in FIGS. 10 (a) and 10 (b), the electrodes 21, 2
If the distance between the two is about the mean free path of the electron,
Almost uniform high-density plasma can be formed without rotating the magnetic field. By rotating the magnetic field, the uniformity is further improved.

FIG. 11 is an emission spectrum of plasma obtained by introducing CHF ₃ gas at a pressure of 1 Pa into the apparatus according to the fourth embodiment. The emission spectrum at a wavelength of 656.3 nm is the α-ray spectrum (Hα) of hydrogen. The intensity of the Hα line indicates the emission intensity of hydrogen atoms generated by the decomposition of CHF ₃ ,
It indicates the degree i.e. plasma density of the decomposition of F _3. Fortunately, since there is little noise light near the Hα ray, the plasma density can be compared by comparing the intensity of the Hα ray.

FIG. 12 is a graph showing the dependence of the radiation intensity of Hα radiation when CHF ₃ gas is introduced into the apparatus according to the fourth embodiment and the gas pressure is changed to 0.4 to 10 Pa. Gas pressure of 10
Even if it decreases from Pa to 0.4 Pa, the radiation intensity hardly changes. Such a decrease in gas pressure from 10 Pa to 0.4 Pa is about 40 times less in terms of gas molecule density, but there is no change in the density of the emitting plasma. That is, in the apparatus according to the fourth embodiment, the plasma generation efficiency increases as the gas pressure decreases to around 1 Pa or less.

Power Ph2 and P supplied to upper electrode 21 and lower electrode 22
The relationship between the h1 phase difference and the plasma uniformity is as follows. The plasma uniformity is fairly good in a range of about ± 40 ° centered on the phase difference 0, and looks almost uniform visually. When the substrate 3 is etched in such a situation, when the magnetic field 11 is stopped, good uniformity of about ± 15% can be obtained. Similarly, when the magnetic field 11 is rotated, highly uniform etching of about ± 3% can be performed.

Next, if the phase difference is increased and set to a range of about ± 40 ° around 180 °, the uniformity of the plasma will be somewhat degraded, and even if it is visually observed, it will be slightly strong at both ends of the space between the upper and lower electrodes 21 and 22. Plasma emission is observed. Both ends are lines of magnetic force
It is located in the direction perpendicular to 11. The substrate 3 in the vicinity of the plasma having a strong light emission has a slightly high etching rate and deteriorates the in-plane uniformity of the etching. In such a situation, when the magnetic field 11 is fixed and the substrate 3 is etched, etching uniformity of about ± 30% can be obtained. Similarly, when the magnetic field 11 is rotated, highly uniform etching of about ± 3% can be performed.
In the range of the phase difference other than this, an intermediate uniformity of the plasma uniformity obtained near 0 ° and 180 ° is obtained.

There is no strong relationship between plasma density and phase difference,
At any phase difference, a plasma is generated which is stronger than the conventional magnetron plasma. Therefore, any phase difference can be etched faster than the conventional magnetron plasma. In the discussion of the phase difference, when an insulating dielectric plate or the like is arranged between the electrode 21 or 22 and the substrate 3 thereon, a phase difference occurs in the high-frequency power between the electrode 21 or 22 and the substrate 3. May be. In this case, the phase difference between the high-frequency powers Ph1 and Ph2 in question is defined by the phase difference between the high-frequency powers Ph1 and Ph2 applied on the substrate 3,
It is preferable to consider it.

The power ratio of the powers Ph2 and Ph1 supplied to the upper and lower electrodes 21 and 22 slightly affects the uniformity of the plasma. Upper and lower electrodes 21, 2
If the power supplied to one or both of the two is sufficiently increased, a dense plasma is generated. In this case, if the power supplied to one of them is set to 0 and grounded, the plasma becomes extremely uneven and the plasma density is considerably reduced. For example, the upper electrode 21
When the power Ph2 supplied to the lower electrode 22 is made sufficiently large and the power Ph1 supplied to the lower electrode 22 is made slightly smaller, high-density plasma is generated in the space between the upper and lower electrodes 21 and 22. The self-bias voltage of the upper electrode 21 increases and the ion sheath becomes thicker,
The kinetic energy of the positive ions incident on the substrate 3 also increases. The self-bias voltage of the lower electrode 22 becomes smaller, the ion sheath becomes thinner, and the kinetic energy of positive ions incident on the substrate 3 becomes smaller. Therefore, in such a case, the upper electrode 21 is suitable for etching the substrate 3 at a high speed with a large ion energy or performing a plasma treatment such as sputtering, and the lower electrode 22 is at a relatively high speed with a small ion energy and a relatively high ion collision. It is suitable for etching or plasma processing such as CVD with less damage.

When the powers Ph2 and Ph1 supplied to the upper and lower electrodes 21 and 22 are substantially equal, it is suitable for etching the substrate 3 on the upper and lower electrodes 21 and 22 under substantially equal conditions or performing plasma processing such as CVD. Therefore, when the ratio of the power supplied to one of the upper and lower electrodes 21 and 22 to the sum of the power supplied to both the upper and lower electrodes 21 and 22 is about 20 to 80%, the density is higher than that of the conventional magnetron plasma. Plasma is generated.

Assuming that the distance between the two electrodes 21 and 22 is sufficiently short and the space between the electrodes 21 and 22 is about the mean free path of electrons, the electrons emitted from the upper electrode 21 and the lower electrode 22
Since the space between the lower electrodes continues to rotate while being mixed appropriately, a plasma having a density higher than that of the conventional magnetron plasma is generated and becomes almost uniform. Therefore, substantially uniform plasma can be formed without rotating the magnetic field. Of course, the uniformity is further improved by rotating the magnetic field.

Since the ionization rate of the plasma by the magnetron discharge is higher than the ionization rate of the plasma by the normal high-frequency discharge by at least two orders of magnitude, the dry etching with the apparatus according to the present invention can be performed at least one order of magnitude faster than the conventional one.

In the apparatus of the first to ninth embodiments, by using the film forming gas such as SiH ₄ as a reaction gas 4, used as a CVD (Chemical base Pade position) device, as an etching apparatus by using the etching gas such as CF ₄ It can be used as a sputtering device if a sputtering gas such as Ar is used.

In the first to seventh embodiments, a high-frequency power source is used as the power source for plasma generation. However, the frequency is not a problem, and a low-frequency power source may be used.

In the first to ninth embodiments, the gas pressure is about 1 to 100 mTorr or 1 Pa (7.5 mTorr) or less, and the distance between the electrodes 21 and 22 is 10 to 10 mTorr.
The distance is preferably about 30 mm, but the gap between the electrodes 21 and 22 may be wider if the gas pressure decreases and the mean free path of electrons becomes longer. As a guideline for selecting the gas pressure and the interval between the electrodes 21 and 22, it is preferable to consider that the gas pressure and the electrode interval are inversely proportional. In addition, since the distance between the electrodes 21 and 22 is also related to the diameter of the rotational movement of the electrons, it is necessary to increase the magnetic field 11 to reduce the diameter of the rotational movement if the distance between the electrodes is narrow, and to increase the magnetic field if the distance between the electrodes is wide. It is necessary to weaken 11 to increase the diameter of the rotation. The strength of the magnetic field and the diameter of the rotational movement can be generally considered to be inversely proportional. Therefore the magnetic field
Preferably, the strength of the magnetic field 11 is inversely proportional to the distance between the electrodes 21 and 22, and the strength of the magnetic field 11 is proportional to the gas pressure. As a guide for the strength of the magnetic field, the gas pressure should be 1-100mTorr or 1P
In the case of about a (7.5 mTorr) and the interval between the electrodes 21 and 22 is about 10 to 30 mm, it is preferable to apply a magnetic field 11 of about 150 to 200 Gauss.

FIG. 13 is a diagram showing the self-bias voltage dependence of the etching rate when photoresist is etched by O ₂ plasma.

The etching rate of the photoresist by the dry process apparatus according to the present invention is represented by a line, and the etching rate in the case of the conventional magnetron etching apparatus is represented by b line. When the self-bias voltage is 35 V, the dry process apparatus according to the present invention can perform etching twice as fast as the conventional magnetron etching apparatus.
Etching can be performed at a relatively high speed. This difference in etching rate means a difference in plasma density, and indicates that the dry process apparatus according to the present invention can generate a higher-density plasma than a conventional magnetron etching apparatus.

Since the dry process apparatus according to the present invention uses the action of the magnetic field 11 to rotate and confine the secondary electrons emitted from each of the electrodes 21 and 22 in the space between the narrow electrodes 21 and 22, the uniformity of the dry process apparatus is quite good. High-density plasma is generated. Its spatial uniformity is much better than conventional magnetron plasmas. This uniformity is further improved by rotating and averaging the magnetic field 11. The good spatial uniformity can be measured by etching the substrate 3. When the magnetic field is fixed, the in-plane distribution of the etching rate on the surface of the substrate 3 is not so good at about ± 35% in the conventional etching by the magnetron plasma, but is about ± 15% in the dry process apparatus according to the present invention. Pretty good. When the magnetic field 11 is rotated, the uniformity is further improved, and an excellent etching uniformity of about ± 3% can be obtained by using the dry process apparatus according to the present invention.

FIG. 14 is a view showing the in-plane uniformity of the etching depth when a 6-inch SiO ₂ substrate is etched by introducing CHF ₃ gas into the dry process apparatus according to the present invention. The etching time was about 1 minute, and the magnetic field 11 was rotated. Since the magnetic field 11 is rotated, the distribution of the etching is substantially symmetric with respect to the center. The in-plane uniformity of the obtained etching is about ± 4%. As described above, the dry process apparatus according to the present invention can generate magnetron plasma with more excellent uniformity as compared with the conventional dry process apparatus.

The gas pressure that can generate magnetron discharge is 1Pa (7.5mT
Since it is considerably lower than orr), etching with good directivity can be performed, and a high-quality thin film with few impurities can be formed. In addition, since both electrodes 21 and 22 can be irradiated with plasma in substantially the same state, the electrodes 21 and 22 can be simultaneously irradiated.
It is possible to process two or more substrates 3 above.

Further, according to the dry process apparatus according to the present invention,
Since the magnetic field 11 is applied in a direction substantially parallel to the substrate 3, electrons in the plasma hardly flow to the substrate 3 side, and therefore, an ion sheath is difficult to be formed. Since the substrate 3 becomes smaller, damage to the substrate 3 caused by incident ions becomes smaller. For this reason, the dry process apparatus according to the present invention is particularly suitable for use in gates requiring low damage etching or high-speed deposition, trench etching or deposition of wiring material. Further, according to the present invention, the size of the device can be reduced.

〔The invention's effect〕

As is apparent from the above description, according to the dry processing apparatus of the present invention, the. AC power Ph is supplied to the electrodes 21 and 22 of two kinds of polarities via the blocking capacitor 7 with an arbitrary phase difference. Apply a negative DC voltage to each electrode 21, 22
And the positive and DC voltages or ground voltages are applied to the reaction chamber 1 or other electrodes inside the reaction chamber 1, so that an ion sheath having a high positive ion density is formed near the electrodes 21 and 22. Density distribution of the magnetron plasma
Since the directions are opposite at 21 and 22, respectively, by reducing the distance between the electrodes, substantially uniform plasma can be generated without rotating the magnetic field.

[Brief description of the drawings]

FIG. 1 is an explanatory view showing the outline of the configuration of the first embodiment of the apparatus of the present invention, FIG. 2 is an explanatory view showing the outline of the configuration of the second embodiment of the apparatus of the present invention, and FIG. FIG. 4 is an explanatory diagram showing the outline of the configuration of the third embodiment, FIG. 4 is an explanatory diagram showing the outline of the configuration of the fourth embodiment of the present invention, and FIG. 5 is the outline of the configuration of the fifth embodiment of the present invention. , FIG. 6 is an explanatory view showing the outline of the configuration of the sixth embodiment of the device of the present invention, FIG. 7 is an explanatory diagram showing the outline of the configuration of the seventh embodiment of the device of the present invention, FIG. Is an explanatory view showing the outline of the configuration of the eighth embodiment of the apparatus of the present invention, FIG. 9 is an explanatory view showing the outline of the configuration of the ninth embodiment of the apparatus of the present invention, and FIGS. For explaining the reason why the electrode spacing must be reduced in FIG. 11, FIG. 11 shows an example of the emission spectrum of plasma in the apparatus of the present invention, and FIG. FIG. 13 shows an example of the gas pressure dependence of the radiation intensity in the apparatus, FIG. 13 shows the etching rate with respect to the self-bias voltage in the apparatus of the present invention and the conventional apparatus, and FIG. 14 shows the etching uniformity of the apparatus of the present invention. FIG. 15 is an explanatory diagram showing an outline of an example of a configuration of a dry etching apparatus as a conventional dry process apparatus. FIG. 16 is an explanatory view showing an outline of an example of a configuration of another example of a dry etching apparatus as a conventional dry process apparatus. FIG. 1 ... reaction chamber, 3 ... substrate, 4 ... reaction gas, 5 ... exhaust gas, 6 ... AC (high frequency) power supply, 7 ... blocking capacitor, 9 ... insulator, 10 ... electric field, 11 ... magnetic field, 12 ... solenoid coil, 13 ... magnetron discharge, 15 ... DC power supply, 16 ... AC (high frequency) power supply, 17 ...
… Phase shifter, 21… (upper) electrode, 22… (lower) electrode, Ph, Ph1, Ph2… AC (high frequency) power, 25…
DC power supply, 26 ... AC (high frequency) power supply, 27 ... Power divider.

────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Harunobu Sakuma 2-1-1 Shinmeidai, Hamura-machi, Nishitama-gun, Tokyo Inside the Hamura Plant of Kokusai Electric Co., Ltd. (56) References JP-A-61-30036 (JP, A) JP-A-63-155546 (JP, A) JP-A-62-23987 (JP, A) JP-A-62-97329 (JP, A) JP-B-63-37193 (JP, B2) (58) Int.Cl. ⁶ , DB name) C23F 4/00 C23C 14/34-14/36 C23C 16/00-16/56

Claims (12)

(57) [Claims] At least two electrodes (21, 22) are arranged in a reaction chamber (1) to face each other, and at least two of the inner surfaces of the at least two electrodes (21, 22) face each other. 1
At least one or more substrates (3) are installed above the surface, and a magnetic field (11) is applied so as to be substantially parallel to each of the electrodes (21, 22). The electrodes (21, 22) are supplied via the blocking capacitor (7) with their phases synchronized with an arbitrary phase difference, and the distance between the two opposing electrodes (21, 22) is increased. A dry process apparatus characterized in that the distance is about the mean free path of electrons, and a magnetron discharge is generated in a space between two opposing electrodes (21, 22). 2. The reaction chamber (1) or the inside of the reaction chamber (1) is supplied with AC power of the same frequency to two electrodes (21, 22) facing each other at the phase difference of 0 ° or 180 °, respectively. The dry process apparatus according to claim 1, wherein the other electrode is grounded. 3. The dry process apparatus according to claim 1, wherein AC power having an arbitrary power ratio is supplied to each of two opposing electrodes (21, 22). 4. The phase difference of AC power is 0 ± 40 ° or 180 °.
4. The dry process apparatus according to claim 1, wherein the dry process apparatus is within a range of {± 40}. 5. An apparatus according to claim 1, wherein two independent AC power supplies whose phases are synchronized supply AC power to two opposing electrodes, respectively. 4
A dry process apparatus according to any one of the above. 6. The power generated by one AC power supply (6) is 2
The dry process apparatus according to any one of claims 1 to 4, wherein the dry process apparatus is supplied by distributing the electric power. 7. The reaction chamber (1) or another electrode inside the reaction chamber (1) is grounded.
7. The dry process apparatus according to any one of items 5 and 6. 8. At least two electrodes (21, 22) are arranged in the reaction chamber (1) facing each other, and at least two of the facing inner surfaces of the at least two electrodes (21, 22) are arranged. 1
At least one substrate (3) is placed above the surface, a magnetic field (11) is applied so as to be substantially parallel to each electrode (21, 22), and a negative DC voltage is applied to each electrode (21, 22). Respectively, and a positive DC voltage or a ground voltage is applied to the reaction chamber (1) or the other electrode inside the reaction chamber (1), and a distance between two opposing electrodes (21, 22) is adjusted by an electron. A dry process apparatus characterized in that the distance is about the same as the mean free path, and a magnetron discharge is generated in the space between the electrodes (21, 22). 9. The dry process apparatus according to claim 8, wherein a negative DC voltage is applied to each of the two opposing electrodes at an arbitrary power ratio. 10. The dry process apparatus according to claim 1, wherein the total number of electrodes is three or more. 11. The dry process apparatus according to claim 10, wherein the intervals between the two facing electrodes (21, 22) are all equal and parallel to each other. 12. The dry process apparatus according to claim 1, wherein a distance between two opposing electrodes (21, 22) is in a range of 1 cm to 5 cm.