JP2624366B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JP2624366B2 JP2624366B2 JP2296140A JP29614090A JP2624366B2 JP 2624366 B2 JP2624366 B2 JP 2624366B2 JP 2296140 A JP2296140 A JP 2296140A JP 29614090 A JP29614090 A JP 29614090A JP 2624366 B2 JP2624366 B2 JP 2624366B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- semiconductor device
- hydrogen gas
- gate oxide
- natural oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置の製造方法に関し、特にMOS型
半導体装置のゲート酸化膜の形成方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming a gate oxide film of a MOS type semiconductor device.
薄いゲート酸化膜を用いるMOS型半導体装置では、自
然酸化膜が結晶的に均質なゲート酸化膜の成長をさまた
げる為、半導体基板表面の酸化前に自然酸化膜の除去が
行なわれている。従来この自然酸化膜の除去には、フッ
化水素酸等による化学エッチング法が主に用いられてい
る。In a MOS type semiconductor device using a thin gate oxide film, the natural oxide film is removed before the surface of the semiconductor substrate is oxidized, because the natural oxide film prevents the growth of a crystal uniform gate oxide film. Conventionally, a chemical etching method using hydrofluoric acid or the like has been mainly used for removing the natural oxide film.
上述した従来の自然酸化膜の除去方法は、フッ化水素
酸等により自然酸化膜が除去できたとしても、むき出し
になった正常な半導体基板表面が非常に活性な為、フッ
化水素酸中又は次工程の純水洗浄中で酸素基又は水素基
を吸着し、再度不均一な自然酸化膜が成長する。その為
に次工程での酸により形成されるゲート酸化膜の厚さが
不均一となり、半導体装置の特性がばらつくという欠点
がある。In the conventional method for removing a native oxide film described above, even if the native oxide film can be removed with hydrofluoric acid or the like, the exposed normal semiconductor substrate surface is very active, Oxygen groups or hydrogen groups are adsorbed during the pure water washing in the next step, and a non-uniform natural oxide film grows again. Therefore, there is a disadvantage that the thickness of the gate oxide film formed by the acid in the next step becomes non-uniform and the characteristics of the semiconductor device vary.
本発明の半導体装置の製造方法は、半導体基板表面を
高真空中で水蒸気及び酸素ガスを遮断した状態で水素ガ
スと反応させて自然酸化膜を還元的に除去し、さらに清
浄化された半導体基板表面に水素を吸着結合させること
により安定化させるという工程を有する。水素ガスと反
応させる方法としては、水素ガスのプラズマ化または半
導体基板表面への光照射等を用いる。The method for manufacturing a semiconductor device according to the present invention is directed to a method of manufacturing a semiconductor device in which the surface of a semiconductor substrate is reacted with hydrogen gas in a high vacuum while shutting off water vapor and oxygen gas to reduce a natural oxide film reductively and to further clean the semiconductor substrate. The method has a step of stabilizing by adsorbing and bonding hydrogen to the surface. As a method for reacting with the hydrogen gas, plasma conversion of the hydrogen gas, light irradiation on the surface of the semiconductor substrate, or the like is used.
次に、本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第１図および第２図は本発明の第１の実施例を説明す
るための装置の断面図及びＡ部の拡大図である。FIG. 1 and FIG. 2 are a sectional view of an apparatus for explaining a first embodiment of the present invention and an enlarged view of a portion A.
MOS型半導体装置のゲート酸化膜形成工程前のシリコ
ン基板１を、反応容器３内に設けられたステージ２の上
に置き、反応容器３の内部を真空系４にて10-5Pa程度の
高真空にする。次に水素ガス供給系５から水素ガスを適
量供給した後、マグネットコイル６にて磁場をかけなが
ら導波管７を通してマイクロ波８を供給する。この時電
子サイクロトロン共鳴効果によりイオンプラズマ化した
水素ガス９はシリコン基板１上の自然酸化膜10と還元的
に反応し、例えばSiOx膜をH2O＋SiH4の様に分解除去す
る。The silicon substrate 1 before the gate oxide film forming step of the MOS type semiconductor device is placed on the stage 2 provided in the reaction vessel 3, and the inside of the reaction vessel 3 is evacuated by the vacuum system 4 to a high pressure of about 10 -5 Pa. Apply vacuum. Next, after supplying an appropriate amount of hydrogen gas from the hydrogen gas supply system 5, a microwave 8 is supplied through a waveguide 7 while applying a magnetic field with a magnet coil 6. At this time, the hydrogen gas 9 ionized by the electron cyclotron resonance effect reacts reductively with the natural oxide film 10 on the silicon substrate 1 to decompose and remove the SiOx film, for example, as H 2 O + SiH 4 .
この後、マグネットコイル６の磁場およびマイクロ波
８を切ると、清浄化したシリコン基板１の表面は水素ガ
スが吸着され安定化される。Thereafter, when the magnetic field of the magnet coil 6 and the microwave 8 are turned off, the cleaned surface of the silicon substrate 1 is stabilized by the adsorption of hydrogen gas.
このようにして自然酸化膜除去を行った後に酸化しゲ
ート酸化膜を形成した結果、膜厚的にも結晶的にも均質
なゲート酸化膜が得られた。As a result, the gate oxide film was formed by oxidation after the removal of the natural oxide film, and as a result, a gate oxide film having a uniform thickness and a uniform crystal was obtained.
第３図は本発明の第２の実施例を説明するための装置
の断面図である。FIG. 3 is a sectional view of an apparatus for explaining a second embodiment of the present invention.
第１の実施例と同様に、シリコン基板をステージ２の
上に置き、反応容器３の内部を真空系４にて高真空にし
た後、水素ガス供給系５から水素ガスを流す。この後
に、ランプ系11により例えば遠紫外線12をシリコン基板
１に照射する。これにより水素ガスが励起され、第１の
実施例と同様に自然酸化膜は分解除去される。その後遠
紫外線の照射をとめることにより、シリコン基板１の表
面は水素ガスの吸着により安定化される。以下シリコン
基板１の表面を酸化してゲート酸化膜を形成する。As in the first embodiment, the silicon substrate is placed on the stage 2, the inside of the reaction vessel 3 is evacuated to a high vacuum by the vacuum system 4, and then hydrogen gas is supplied from the hydrogen gas supply system 5. Thereafter, the silicon substrate 1 is irradiated with, for example, far ultraviolet rays 12 by the lamp system 11. As a result, the hydrogen gas is excited, and the natural oxide film is decomposed and removed as in the first embodiment. Thereafter, by stopping irradiation with far ultraviolet rays, the surface of the silicon substrate 1 is stabilized by adsorption of hydrogen gas. Hereinafter, the surface of the silicon substrate 1 is oxidized to form a gate oxide film.
以上説明したように本発明は、半導体基板表面の自然
酸化膜を高真空中で水蒸気および酸素ガスを遮断した状
態で水素ガスと反応させることにより確実に除去すると
共に、清浄化された基板表面を安定化することができる
ため、次工程の、例えばMOS型半導体装置のゲート酸化
膜形成時に均一な酸化が可能となり、膜厚的にも結晶的
にも均質なゲート酸化膜が得られ、MOS型半導体装置の
電気特性を向上させることができるという効果がある。As described above, the present invention reliably removes the natural oxide film on the surface of the semiconductor substrate by reacting it with hydrogen gas in a high vacuum with water vapor and oxygen gas shut off, and cleans the substrate surface. Because it can be stabilized, uniform oxidation can be performed in the next step, for example, when forming a gate oxide film of a MOS type semiconductor device, and a gate oxide film having a uniform thickness and crystal can be obtained. There is an effect that the electrical characteristics of the semiconductor device can be improved.
第１図及び第２図は本発明の第１の実施例を説明するた
めの装置の断面図及びＡ部の拡大図、第３図は本発明の
第２の実施例を説明するための装置の断面図である。 １……シリコン基板、２……ステージ、３……反応容
器、４……真空系、５……水素ガス供給系、６……マグ
ネットコイル、７……導波管、８……マイクロ波、９…
…水素ガス、10……自然酸化膜、11……ランプ系、12…
…遠紫外線。1 and 2 are a cross-sectional view and an enlarged view of a part A of a device for explaining a first embodiment of the present invention, and FIG. 3 is a device for explaining a second embodiment of the present invention. FIG. DESCRIPTION OF SYMBOLS 1 ... Silicon substrate, 2 ... Stage, 3 ... Reaction vessel, 4 ... Vacuum system, 5 ... Hydrogen gas supply system, 6 ... Magnet coil, 7 ... Waveguide, 8 ... Microwave, 9 ...
... hydrogen gas, 10 ... natural oxide film, 11 ... lamp system, 12 ...
… Far ultraviolet rays.
Claims (1)
半導体装置の製造方法において、半導体基板表面に成長
した自然酸化膜を水素ガスを用いて除去したのち酸化す
ることを特徴とする半導体装置の製造方法。In a method of manufacturing a semiconductor device, wherein an oxide film is formed by oxidizing the surface of a semiconductor substrate, a natural oxide film grown on the surface of the semiconductor substrate is removed using hydrogen gas and then oxidized. Manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2296140A JP2624366B2 (en) | 1990-10-31 | 1990-10-31 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2296140A JP2624366B2 (en) | 1990-10-31 | 1990-10-31 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04168768A JPH04168768A (en) | 1992-06-16 |
| JP2624366B2 true JP2624366B2 (en) | 1997-06-25 |
Family
ID=17829670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2296140A Expired - Lifetime JP2624366B2 (en) | 1990-10-31 | 1990-10-31 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2624366B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5278132B2 (en) * | 2009-04-16 | 2013-09-04 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61193456A (en) * | 1985-02-21 | 1986-08-27 | Toshiba Corp | Manufacture of semiconductor element |
| JPH03215936A (en) * | 1990-01-19 | 1991-09-20 | Mitsubishi Electric Corp | Semiconductor manufacturing device |
| JPH04127529A (en) * | 1990-09-19 | 1992-04-28 | Hitachi Ltd | Surface cleaning process |
-
1990
- 1990-10-31 JP JP2296140A patent/JP2624366B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61193456A (en) * | 1985-02-21 | 1986-08-27 | Toshiba Corp | Manufacture of semiconductor element |
| JPH03215936A (en) * | 1990-01-19 | 1991-09-20 | Mitsubishi Electric Corp | Semiconductor manufacturing device |
| JPH04127529A (en) * | 1990-09-19 | 1992-04-28 | Hitachi Ltd | Surface cleaning process |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04168768A (en) | 1992-06-16 |
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