JP2615866B2 - Magneto-optical card recording medium - Google Patents
Magneto-optical card recording mediumInfo
- Publication number
- JP2615866B2 JP2615866B2 JP63159675A JP15967588A JP2615866B2 JP 2615866 B2 JP2615866 B2 JP 2615866B2 JP 63159675 A JP63159675 A JP 63159675A JP 15967588 A JP15967588 A JP 15967588A JP 2615866 B2 JP2615866 B2 JP 2615866B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- recording
- layer
- magneto
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
Landscapes
- Credit Cards Or The Like (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光磁気カード記録媒体、特に、膜面と垂直
方向に磁化容易軸を有する磁性膜を記録層とし、レーザ
ーなどの光ビームを照射した領域に反転磁区を作るとに
より、情報を記録することができ、磁気光学効果を利用
して読み出すことができる光磁気カード記録媒体に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a magneto-optical card recording medium, in particular, a magnetic film having an easy axis of magnetization perpendicular to the film surface as a recording layer, and a light beam such as a laser beam. The present invention relates to a magneto-optical card recording medium in which information can be recorded by forming a reversed magnetic domain in the irradiated area and which can be read out by utilizing the magneto-optical effect.
一般に、光メモリは、大容量ファイルメモリの一つと
して位置付けられている。中でも光磁気メモリは、記録
情報の書換えが可能であると言う利点を持っていること
から注目され、特に、ディスクへの応用が各所で盛んに
研究されている。その光記録媒体としては、Tb,Gd,Dy,H
o等の希土類金属とFe,Co,Ni等の遷移金属との組合せに
よって作成される非晶質磁性薄膜が、記録感度が高い、
粒界ノイズがない、膜面に垂直方向の磁気異方性を有す
る膜が容易に作れるの等の利点を有するため、最も有望
視されている。Generally, the optical memory is positioned as one of the large capacity file memories. Above all, magneto-optical memories have attracted attention because they have the advantage of being able to rewrite recorded information, and their application to disks has been actively studied in various places. As the optical recording medium, Tb, Gd, Dy, H
An amorphous magnetic thin film formed by a combination of a rare earth metal such as o and a transition metal such as Fe, Co, and Ni has high recording sensitivity,
It is most promising because it has the advantages of easily producing a film having no grain boundary noise and having magnetic anisotropy in a direction perpendicular to the film surface.
このような光記録媒体に対する、情報の記憶・消去は
次のように行なわれる。Information is stored / erased from such an optical recording medium as follows.
記録は、一方向に着磁した光記録媒体にレーザビーム
を照射して、媒体温度をキューリ温度Tcもしくは補償温
度Tcomp以上に上昇させ、外部印加磁界と光記録媒体の
反磁界によって、反転磁区を形成することにより行われ
る。Recording is performed by irradiating an optical recording medium magnetized in one direction with a laser beam to raise the medium temperature to a Curie temperature Tc or a compensation temperature Tcomp or more, and an inverted magnetic domain is generated by an externally applied magnetic field and a demagnetizing field of the optical recording medium. It is performed by forming.
消去は、外部磁界を記録磁とは逆極性に印加しレーザ
ビームを記録時と同等の強度で、光記録媒体に一様に照
射する、いわゆる一括消去により行われる。これによ
り、記録媒体の磁化状態は、記録前の初期状態に戻る。Erasing is performed by so-called batch erasing, in which an external magnetic field is applied in a polarity opposite to that of the recording magnet and a laser beam is uniformly applied to the optical recording medium with the same intensity as during recording. Thereby, the magnetization state of the recording medium returns to the initial state before recording.
このように、従来の光磁気記録媒体の応用は、主とし
て、ディスク媒体を想定したものであり、カード媒体へ
の応用は、殆ど、報告されていない。また、従来の光磁
気記録媒体に対して、情報の記録を行う場合には、レー
ザビームを発生する光学系以外に、外部磁界印加手段が
必須であるため、光磁気記録・再生装置の構成は、複雑
になる傾向があった。また、外部磁界強度として、数百
エルステッドのオーダが必要であるため、これを高速で
切り替えることは、従来の磁界印加手段である空心コイ
ル、電磁石、永久磁石等では、困難である。従って、消
去には、上述した一括消去方式が用いられ、また記録に
は、一定磁界中に、レーザ光パワーを高速変調する方法
が用いられていた。As described above, the application of the conventional magneto-optical recording medium is mainly intended for a disk medium, and the application to a card medium has hardly been reported. Further, when recording information on a conventional magneto-optical recording medium, an external magnetic field applying means is indispensable in addition to an optical system for generating a laser beam. , Tended to be complicated. In addition, since the external magnetic field strength needs to be on the order of several hundred Oersteds, it is difficult to switch the external magnetic field at a high speed with a conventional magnetic field applying means such as an air-core coil, an electromagnet, a permanent magnet, or the like. Therefore, the above-mentioned collective erasing method is used for erasing, and the method of modulating the laser light power at a high speed in a constant magnetic field is used for recording.
従って、情報の記録には、消去過程を必要とするた
め、記録再生動作が複雑となるとともに、高速化が限定
されるという欠点があった。Therefore, the recording of information requires an erasing process, which complicates the recording / reproducing operation and limits the speed.
[課題を解決するための手段] 本発明の光磁気カード記録媒体は、基体と、この基体
の上に設けられ、複数の磁界発生部と、隣接する前記磁
界発生部の少なくとも二つの一端を共通に接続する一つ
以上の共通接続部とからなる導電体パターンと、この導
電体パターンの上に設けられ、誘電体からなる絶縁層
と、隣接する前記磁界発生部の相互間に少なくとも設け
られ、膜面の垂直方向に磁気異方性を有する記録層と、
誘電体からなり前記記録層を保護するための保護層と、
前記記録層に記録するために磁界を発生すべく通電する
ための隣接する一対の前記磁界発生部を他端を選択して
通電する選択回路とを含むことを特徴としている。[Means for Solving the Problems] A magneto-optical card recording medium according to the present invention has a base, a plurality of magnetic field generators provided on the base, and at least two ends of the adjacent magnetic field generators in common. A conductor pattern consisting of one or more common connection portions connected to each other, provided on the conductor pattern, an insulating layer made of a dielectric material, and provided at least between the adjacent magnetic field generating portions, A recording layer having magnetic anisotropy in the direction perpendicular to the film surface,
A protective layer made of a dielectric material for protecting the recording layer,
A selection circuit for selecting the other end of a pair of adjacent magnetic field generating portions for energizing to generate a magnetic field for recording on the recording layer and energizing it.
また、本発明の他の光磁気カード記録媒体は、基体
と、この基体の上に設けられ、複数の磁界発生部と、隣
接する一対の前記磁界発生部の一端を折り返し状に共通
に接続する複数対の共通接続部とからなる導電性パター
ンと、この導電体パターンの上に設けられ、誘電体から
なる絶縁層と、隣接する前記磁界発生部の相互間に少な
くとも設けられ、膜面の垂直方向に磁気異方性を有する
記録層と、 誘電体からなり前記記録層を保護するための記録層
と、前記記録層に記録するために磁界を発生すべく通電
するための隣接する一対の前記磁界発生部の他端を選択
して通電する選択回路とを含むことを特徴としている。In another magneto-optical card recording medium of the present invention, a base is provided on the base, and a plurality of magnetic field generators and one end of a pair of adjacent magnetic field generators are commonly connected in a folded manner. A conductive pattern including a plurality of pairs of common connection portions, and an insulating layer formed of a dielectric provided on the conductive pattern, and at least provided between the adjacent magnetic field generating portions, and perpendicular to a film surface. A recording layer having a magnetic anisotropy in a direction, a recording layer made of a dielectric material for protecting the recording layer, and a pair of adjacent ones for energizing to generate a magnetic field for recording on the recording layer. It is characterized by including a selection circuit for selecting the other end of the magnetic field generation unit and energizing it.
さらに、本発明の他の光磁気カード記録媒体は、基体
と、この基体の上に設けられ、複数の磁界発生部と、前
記磁界発生部の一端を簾状に共通に接続する共通接続部
とからなる導電体パターンと、この導電体パターンの上
に設けられ、誘電体からなる絶縁層と、隣接する前記磁
界発生部の相互の間に少なくとも設けられ、膜面の垂直
方向に磁気異方性を有する記録層と、誘電体からなり前
記記録層を保護するための保護層と、前記記録層に記録
するために磁界を発生すべく通電するための隣接する一
対の前記磁界発生部の他端を選択して通電する選択回路
とを含むことを特徴としている。Further, another magneto-optical card recording medium of the present invention includes a base body, a plurality of magnetic field generating portions provided on the base body, and a common connecting portion for commonly connecting one ends of the magnetic field generating portions in a blind shape. And a dielectric pattern provided on the conductor pattern and provided at least between the adjacent magnetic field generating portions and a magnetic anisotropy in a direction perpendicular to the film surface. A recording layer having a dielectric layer, a protective layer made of a dielectric material for protecting the recording layer, and the other ends of a pair of adjacent magnetic field generating portions for energizing to generate a magnetic field for recording on the recording layer. And a selection circuit for selecting and energizing.
折り返し状の導電パターンの場合、複数個の折り返し
状の二端子パターンの中から、所望の二端子を選択し、
この二端子間に、電流を流すことによって、このパター
ン間に形成された記録層に、垂直方向からバイアス磁界
を印加することができる。このバイアス磁界印加方向
は、通電方向を切り替えることによって、容易に切り替
えることができる。また、この二端子パターンで形成さ
れる直線状の溝は、光ヘッドのガイドトラックを兼ね
る。従って、レーザビームを、前記ガイドトラックにそ
って平行移動させながら、記録層に照射し、同時に記録
信号に対応した電流を、前記二端子間に通電することに
よって、記録層には、信号に対応した磁化状態を実現す
ることができる。In the case of a folded conductive pattern, the desired two terminals are selected from a plurality of folded two terminal patterns,
By applying a current between the two terminals, a bias magnetic field can be applied to the recording layer formed between the patterns in the vertical direction. The direction of applying the bias magnetic field can be easily switched by switching the direction of conduction. The linear groove formed by this two-terminal pattern also serves as a guide track for the optical head. Therefore, by irradiating the recording layer with the laser beam in parallel along the guide track, and simultaneously applying a current corresponding to the recording signal between the two terminals, the recording layer can correspond to the signal. A magnetized state can be realized.
また、簾状の導電パターンの場合、一方が複数の端子
からなり他方が共通に接続された一定の間隔を有する簾
状パターンの中から、所望の隣合う二端子パターンを選
択し、この二端子パターン間に、電流を流すことによっ
て、このパターン間に形成された記録層に、垂直方向に
バイアス磁界を印加することができる。このバイアス磁
界印加方向は、通電方向を切り替えることによって、容
易に切り替えることができる。また、この導電体パター
ンで形成される直線状の溝は、光ヘッドのガイドラック
を兼ねる。従って、レーザビームを前記ガイドラックに
そって平行移動させながら、記録層に照射し、同時に記
録信号に対応した電流の、前記二端子間に通電すること
によって、記録層には、信号に対応した磁化状態を実現
することができる。In the case of a blind-shaped conductive pattern, a desired adjacent two-terminal pattern is selected from among the two blind-shaped patterns, one of which is composed of a plurality of terminals and the other of which is commonly connected, and which has a constant interval. By applying a current between the patterns, a bias magnetic field can be applied in a vertical direction to the recording layer formed between the patterns. The bias magnetic field application direction can be easily switched by switching the energization direction. The linear groove formed by the conductor pattern also functions as a guide rack for the optical head. Therefore, by irradiating a laser beam to the recording layer while translating it along the guide rack, and simultaneously applying a current corresponding to a recording signal between the two terminals, the recording layer has a signal corresponding to the signal. A magnetization state can be realized.
次に、本発明の実施例について、図面を参照して詳細
に説明する。Next, embodiments of the present invention will be described in detail with reference to the drawings.
第1図は本発明の第1の実施例を示す平面図、第2図
は第1図に示す光磁気媒体の部分斜視図、第3図は第1
図に示す光磁気媒体の部分断面図、第4図(a),
(b)は第1図〜第3図に示す導電体パターンの作成法
を示す斜視図、第5図は第1図に示す実施例の動作を説
明するための動作説明図である。1 is a plan view showing a first embodiment of the present invention, FIG. 2 is a partial perspective view of the magneto-optical medium shown in FIG. 1, and FIG.
Partial sectional view of the magneto-optical medium shown in FIG. 4, FIG.
(B) is a perspective view showing a method of forming the conductor pattern shown in FIGS. 1 to 3, and FIG. 5 is an operation explanatory diagram for explaining the operation of the embodiment shown in FIG.
第1図に示す光磁気カード記録媒体は、カード状の基
体1の上に導電体パターン6含む光磁気記録媒体2およ
び入力信号端子16に供給される入力信号に応じて所望の
二端子を選択して電流供給端子17からの電流を供給する
選択回路3とを含んで構成される。In the magneto-optical card recording medium shown in FIG. 1, a desired two terminals are selected according to the magneto-optical recording medium 2 including the conductor pattern 6 on the card-shaped base 1 and the input signal supplied to the input signal terminal 16. And the selection circuit 3 which supplies the current from the current supply terminal 17.
基板1は、厚さ1.2mmのポリカーボネートやPMMAなど
から成るカード状のプラスチックの基板(縦55mm横85m
m)で、この基板1の上に厚さ500ÅのSi3N4(窒化シリ
コン膜)からなる絶縁パターン4および厚さ100ÅのTi
膜(チタン膜)からなる付着パターン5を介して、高さ
約3000Å、幅約4000ÅのAu(金)やAl(アルミニウム)
等の導電体からなる折り返し状の二端子の導電体パター
ン6が形成されている。この導電体パターン6は、一定
の間隔約1.6μmを隔てて形成されている磁界発生部M1,
M2,〜M(2n)と、共通接続部C1,C2,〜Cnとで形成され
ている。The substrate 1 is a card-shaped plastic substrate (55 mm in width and 85 m in width) made of 1.2 mm thick polycarbonate or PMMA.
m), an insulating pattern 4 made of Si 3 N 4 (silicon nitride film) having a thickness of 500 Å and a Ti having a thickness of 100 Å on the substrate 1.
Through the adhesion pattern 5 made of a film (titanium film), the height is about 3000Å and the width is about 4000Å Au (gold) or Al (aluminum).
A folded two-terminal conductor pattern 6 made of such a conductor is formed. The conductor pattern 6 includes magnetic field generating portions M1 and M1, which are formed at regular intervals of about 1.6 μm.
It is formed by M2, to M (2n) and common connection parts C1, C2, to Cn.
この導電体パターン6の上に厚さ500ÅのSi3N4膜から
なる絶縁層7を介して、膜面の垂直方向に磁気異方性を
有し非晶質磁性合金膜からなる記録層8として、厚さ30
00ÅのTbFeCo合金膜(Tb0.22Fe0.72Co0.08)、さらに保
護層9として、厚さ1000ÅのSi3N4膜が形成されてい
る。A recording layer 8 made of an amorphous magnetic alloy film having magnetic anisotropy in the direction perpendicular to the film surface is formed on the conductor pattern 6 with an insulating layer 7 made of a Si 3 N 4 film having a thickness of 500 Å interposed therebetween. As the thickness 30
A TbFeCo alloy film (Tb 0.22 Fe 0.72 Co 0.08 ) having a thickness of 00 mm, and a Si 3 N 4 film having a thickness of 1000 mm are formed as the protective layer 9.
各層はマグネトロンスパッタにより成膜される。ま
ず、AuやAl等の導電体からなる折り返し状の二端子の導
電体パターン6は、次のようにして形成される。Each layer is formed by magnetron sputtering. First, a folded two-terminal conductor pattern 6 made of a conductor such as Au or Al is formed as follows.
第4図(a)に示すように、基板1上に厚さ500ÅのS
i3N4膜からなる絶縁層4′、厚さ100ÅのTi膜からなる
付着層5′および厚さ3000ÅのAuの導電体層6′の順に
スパッタした後、厚さ2500Å、幅5000Å、長さ30mmのレ
ジストパターン(AZ1350J使用)10を1.6μmピッチで形
成する。As shown in Fig. 4 (a), S of 500 Å thickness is formed on the substrate 1.
i 3 N 4 insulating layer 4 made of a film ', adhesive layer 5 made of a Ti film having a thickness of 100 Å' was sputtered in this order and thickness conductive layer 6 of Au of 3000 Å ', thickness of 2500 Å, a width 5000 Å, the length Form a 30mm thick resist pattern (using AZ1350J) 10 at 1.6μm pitch.
しかる後、Ar(アルゴン)を用いて、ガス圧2.6×10
-2Paで4分間イオンミリングする。Thereafter, a gas pressure of 2.6 × 10
Ion mill for 4 minutes at -2 Pa.
さらに、酸素プラズマにより、残ったレジストを剥離
することによって、第4図(b)に示すように、Auの折
り返し状の二端子の導電体パターン6が、高さ3000Å、
幅4000Å、ピッチ1.6μmで形成される。記録層8をな
すTbFeCo合金膜は、FeCoターゲット上に、Tb片を配した
複合ターゲットを用い、Arガス雰囲気で、パワー密度4W
/cm2、スパッタガス圧3,5×10-1Paで作成される。絶縁
層7と保護層9を形成するSi3N4膜は、Siターゲットを
用い、ArとN2の混合ガス(50%N2)を、スパッタガスと
した反応性スパッタにより、パワー密度8W/cm2、スパッ
タガス圧2.5×10-1Paで作成される。Further, by stripping the remaining resist by oxygen plasma, as shown in FIG. 4B, the folded two-terminal conductive pattern 6 of Au has a height of 3000 mm,
It is formed with a width of 4000 mm and a pitch of 1.6 μm. The TbFeCo alloy film forming the recording layer 8 uses a composite target in which Tb pieces are arranged on a FeCo target, and has a power density of 4 W in an Ar gas atmosphere.
/ cm 2 and a sputtering gas pressure of 3.5 × 10 -1 Pa. The Si 3 N 4 film forming the insulating layer 7 and the protective layer 9 is formed by a reactive sputtering using an Si target and a mixed gas of Ar and N 2 (50% N 2 ) as a sputtering gas, at a power density of 8 W / cm 2 and a sputtering gas pressure of 2.5 × 10 -1 Pa.
次に、第2図および第3図に示す光磁気記録媒体を用
いた第1図に示す光磁気カード記録媒体の記録動作を図
面を用いて説明する。Next, the recording operation of the magneto-optical card recording medium shown in FIG. 1 using the magneto-optical recording medium shown in FIGS. 2 and 3 will be described with reference to the drawings.
第1図に示したn個の折り返し状の二端子の導電体パ
ターン6の中から、選択回路3により入力信号端子16か
ら入力信号に応じた所望の二端子として磁界発生部M
(2i−1),M(2i)を選択し、第5図に示すように、こ
の二端子間に電流供給端子17を介して電流を流すと、共
通接続部Ciで接続された折り返し状磁界発生部M(2i−
1),M(2i)のまわりには、破線11で示す磁界を生じ
る。つまり、この磁界発生部(2i−1),M(2i)の間に
形成された記録層12には、垂直方向バイアス磁界13を印
加することができる。そして、このバイアス磁界の印加
方式および大きさは、二端子間に流す電流の通電方向18
および大きさを変えることにより、容易に選択できる。
従って、第5図に示すように、レーザビーム14を、折り
返し状パターンをガイドトラックとして、その長さ方向
に相対的に平行移動させながら、前記パターンの間にあ
る記録層12,20に順次照射して、記録層12,20の温度をキ
ュリー温度Tc以上(約220℃)に上昇させ、同時に、着
磁するタイミングに合わせて前記二端子間に流す電流
を、スイッチングすることによって、記録層12,20の冷
却過程で、記録層12,20には、記録信号に対応した所望
の磁化状態を実現することができる。The magnetic field generator M is selected as the desired two terminals from the input signal terminal 16 by the selection circuit 3 among the n folded two-terminal conductor patterns 6 shown in FIG.
(2i-1), M (2i) is selected, and as shown in FIG. 5, when a current flows between the two terminals via the current supply terminal 17, the folded magnetic field connected at the common connection portion Ci Generator M (2i-
1) A magnetic field indicated by a broken line 11 is generated around M (2i). That is, the vertical bias magnetic field 13 can be applied to the recording layer 12 formed between the magnetic field generating units (2i-1) and M (2i). The bias magnetic field application method and magnitude are set so that the direction of the current flowing between the two terminals is 18
The size can be easily selected by changing the size.
Therefore, as shown in FIG. 5, the laser beam 14 is sequentially irradiated to the recording layers 12 and 20 between the patterns while the translational pattern is used as a guide track and is relatively translated in the longitudinal direction. Then, the temperature of the recording layers 12 and 20 is raised to the Curie temperature Tc or higher (about 220 ° C.), and at the same time, the current flowing between the two terminals is switched in accordance with the magnetization timing, thereby switching the recording layers 12 and 20. , 20 can achieve a desired magnetization state corresponding to the recording signal in the recording layers 12, 20.
このように、磁気記録媒体2を用いた記録動作では、
記録磁化方向は記録層の初期磁化方向にはよらず、バイ
アス磁界の方向によって決まるため、通常の磁気記録と
同様に、記録磁化の重ね書き、つまりオーバーライトが
可能である。また二端子パターンのインダクタンスは数
マイクロヘンリーオーダにすることができるので、メガ
ヘルツオーダの拘束の電流スイッチングも可能である。Thus, in the recording operation using the magnetic recording medium 2,
Since the recording magnetization direction does not depend on the initial magnetization direction of the recording layer, but is determined by the direction of the bias magnetic field, overwriting of recording magnetization, that is, overwriting is possible as in normal magnetic recording. In addition, since the inductance of the two-terminal pattern can be set to a few microhenries, it is possible to perform current switching with a constraint of megahertz.
ここで、前記電流値は、記録層の膜組成に応じて、数
十〜数百mAの範囲で適宜選択される。導電体パターンの
高さ、ピッチおよび長さ等の形状は、上述の物に限定さ
れるものではなく、所望の光記録媒体の記録密度および
バイアス磁界の大きさに応じて、適宜選択される。導電
体パターンの高さとしては、数千Å、ピッチとしては、
数μmオーダが望ましい。絶縁層および保護層として用
いられる誘電体としては、Si3N4の他にAlN,SiO1,SiOと
を数百〜数千Åの厚さに形成したものが用いられる。ま
た、上記付着物層5′すなわち付着パターン5は絶縁層
4′すなわち絶縁パターン4と導電体層6′すなわち導
電体パターン6との付着が十分強い場合は、必ずしも必
要ではない。Here, the current value is appropriately selected within a range of several tens to several hundreds of mA depending on the film composition of the recording layer. The shapes such as the height, pitch and length of the conductor pattern are not limited to the above-mentioned ones, and are appropriately selected according to the desired recording density of the optical recording medium and the magnitude of the bias magnetic field. The height of the conductor pattern is several thousand Å, and the pitch is
The order of several μm is desirable. As the dielectric used as the insulating layer and the protective layer, a material in which AlN, SiO 1 , and SiO are formed to a thickness of several hundred to several thousand Å in addition to Si 3 N 4 is used. The deposit layer 5 ', ie, the adhesion pattern 5, is not always necessary when the adhesion between the insulating layer 4', ie, the insulating pattern 4, and the conductor layer 6 ', ie, the conductor pattern 6, is sufficiently strong.
第6図は本発明の第2の実施例を示す平面図、第7図
は第6図に示す光磁気記録媒体の部分斜視図、第8図は
第7図に示す光磁気記録媒体の部分断面図、第9図
(a),(b)は第6図〜第8図に示す導電体パターン
の作成方法を示す斜視図、第10図は第6図に示す実施例
の動作を説明するための動作説明図である。6 is a plan view showing a second embodiment of the present invention, FIG. 7 is a partial perspective view of the magneto-optical recording medium shown in FIG. 6, and FIG. 8 is a part of the magneto-optical recording medium shown in FIG. Sectional views, FIGS. 9 (a) and 9 (b) are perspective views showing a method for producing the conductor pattern shown in FIGS. 6 to 8, and FIG. 10 explains the operation of the embodiment shown in FIG. FIG. 6 is an operation explanatory diagram for the above.
第6図に示す光磁気カード記録媒体は、カード状の基
体の1つ上に導電体パターン23を含む光磁気媒体21と、
選択回路22とを含んで構成される。The magneto-optical card recording medium shown in FIG. 6 includes a magneto-optical medium 21 including a conductor pattern 23 on one of card-shaped substrates,
And a selection circuit 22.
光記録媒体21は第7図および第8図に示すように絶縁
パターン24と、付着パターン25と、導電体パターン23
と、絶縁層7と記録層8と、保護層9とを含んでいる。As shown in FIGS. 7 and 8, the optical recording medium 21 has an insulating pattern 24, an adhesion pattern 25, and a conductor pattern 23.
, An insulating layer 7, a recording layer 8, and a protective layer 9.
導電体パターン23は磁界発生部M1,M2,〜M(2i),〜
M(2n)とこの磁界発生部M1,M2,〜の一端を共通に接続
する共通接続部CTとで構成される。すなわち、導電体パ
ターン23は絶縁パターン24、付着パターン25と同様に簾
状をなす。The conductor pattern 23 includes magnetic field generators M1, M2, ~ M (2i), ~
It is composed of M (2n) and a common connection portion CT that commonly connects one ends of the magnetic field generation portions M1, M2 ,. That is, the conductor pattern 23 has a blind shape like the insulating pattern 24 and the attachment pattern 25.
選択回路22は、磁界発生部M1,M2,〜のうち隣接する二
端子を入力信号端子16から供給させる入力信号に応じて
選択し、磁界を発生するために電流供給端子17からの電
流が供給される。The selection circuit 22 selects two adjacent terminals of the magnetic field generators M1, M2,... According to an input signal to be supplied from the input signal terminal 16, and supplies a current from the current supply terminal 17 to generate a magnetic field. Is done.
基板1は、厚さ1.2mmのポリカーボネイトやPMMAなど
からなるカード状のプラスチックの基板(縦55mm横85m
m)でこの基板1の上に厚さ500ÅのSi3N4膜からなる絶
縁層4、および厚さ100ÅのTi膜からなる付着層5を介
して、高さ約3000Å、幅約4000ÅのAuやAl等の導電体
が、一定の間隔約1.6μmを隔てて磁界発生部M1,M2,〜
が複数併置された簾状の導電体パターン23が形成されて
いる。この上に、厚さ500ÅのSi3N4膜から成る絶縁層7
を介して、膜面の垂直方向に磁気異方性を有し非晶質磁
性合金膜からなる記録層8として、厚さ3000ÅのTbFeCo
合金膜(Tb0.22Fe0.72Co0.08)、さらに保護層9とし
て、厚さ1000ÅSi3N4膜が形成されている。The substrate 1 is a card-shaped plastic substrate made of polycarbonate or PMMA having a thickness of 1.2 mm (length 55 mm, width 85 m).
m) on this substrate 1 through an insulating layer 4 made of a Si 3 N 4 film having a thickness of 500 Å and an adhesion layer 5 made of a Ti film having a thickness of 100 Å, and an Au of about 3000 Å in height and 4000 Å in width. And Al and other conductors are separated by a fixed distance of about 1.6 μm, and the magnetic field generators M1, M2, ...
Are formed side by side to form a blind-shaped conductive pattern 23. On top of this, an insulating layer 7 consisting of a 500 Å thick Si 3 N 4 film
As a recording layer 8 made of an amorphous magnetic alloy film having magnetic anisotropy in the direction perpendicular to the film surface, a TbFeCo film having a thickness of 3000 Å is formed.
An alloy film (Tb 0.22 Fe 0.72 Co 0.08 ) and, as the protective layer 9, a 1000 Å Si 3 N 4 film is formed.
各層は、マグネトロンスパッタにより成膜される。ま
ず、AuやAl等からなる簾状の導電体パターン23は、次の
ようにして形成される。第9図(a)に示すように、基
板1の上に厚さ500ÅのSi3N4膜からなる絶縁層4′、厚
さ100ÅのTi膜からなる付着層5′および厚さ3000ÅのA
uからなる導電体層6′の順にスパッタした後、厚さ250
0Å、幅5500Å、長さ30mm、ピッチ1.6μmの簾状のレジ
ストパターン(AZ1350J使用)10を形成する。Each layer is formed by magnetron sputtering. First, the blind-shaped conductor pattern 23 made of Au, Al, or the like is formed as follows. As shown in FIG. 9 (a), an insulating layer 4 ′ made of a Si 3 N 4 film having a thickness of 500 Å, an adhesion layer 5 ′ made of a Ti film having a thickness of 100 Å and an A having a thickness of 3000 Å are formed on the substrate 1.
After sputtering in the order of the conductor layer 6 ′ made of
A resist pattern (using AZ1350J) 10 having a size of 0 mm, a width of 5500 mm, a length of 30 mm, and a pitch of 1.6 μm is formed.
しかる後、Arを用いて、ガス圧2.6×10-2Paで4分間
イオンミリングする。さらに、酸素プラズマにより、残
ったレジストを剥離することによって、第9図(b)に
示すように、Auの簾状の導電体パターン23が、高さ3000
Å、幅4000Å、ピッチ1.6μmで形成される。記録層8
を成すTbFeCo合金膜は、FeCoターゲット上に、Tb片を配
して複合ターゲットを用い、Arガス雰囲気で、パワー密
度4W/cm2、スパッタガス圧3.5×10-1Paで作成される。
絶縁層7と保護層9を形成するSi3N4膜は、Siターゲッ
トを用い、ArとN2の混合ガス(50%N2)を、スパッタガ
スとした反応性スパッタにより、パワー密度8W/cm2、ス
パッタガス圧2.5×10-1Paで作製される。Then, using Ar, ion milling is performed at a gas pressure of 2.6 × 10 −2 Pa for 4 minutes. Further, the remaining resist is peeled off by oxygen plasma, and as a result, as shown in FIG.
Å, width 4000Å, pitch 1.6 μm. Recording layer 8
The TbFeCo alloy film is formed by arranging a Tb piece on a FeCo target, using a composite target, in an Ar gas atmosphere, at a power density of 4 W / cm 2 , and at a sputtering gas pressure of 3.5 × 10 -1 Pa.
The Si 3 N 4 film forming the insulating layer 7 and the protective layer 9 has a power density of 8 W / W by reactive sputtering using a Si target and a mixed gas of Ar and N 2 (50% N 2 ) as a sputtering gas. It is produced at cm 2 and a sputtering gas pressure of 2.5 × 10 -1 Pa.
次に、第6図に示す光磁気カード記録媒体の記録動作
を図面に用いて説明する。Next, the recording operation of the magneto-optical card recording medium shown in FIG. 6 will be described with reference to the drawings.
第6図に示した簾状の導電体パターン23の2n個の磁界
発生部M1,M2,〜,M(2n)の端子の中から、選択回路22に
より入力信号端子16から入力信号に応じた所望の隣合う
二端子M(2i−1)とM(2i)とを選択し、第10図に示
すように、この二端子間に電流供給端子17を介して電流
を流すと、この二端子の連なる簾状の導電体パターン22
のまわりには、破線11で示す磁界を生じる。つまり、こ
のパターンの間に形成された記録層部分12,19,20には、
垂直方向にバイアス磁界13を印加することができる。そ
して、このバイアス磁界の印加方向および大きさは、二
端子間に流す電流の方向および大きさを変えることによ
り、容易に選択できる。According to the input signal from the input signal terminal 16 by the selection circuit 22 from the terminals of the 2n magnetic field generators M1, M2, to M (2n) of the blind-shaped conductor pattern 23 shown in FIG. If desired two adjacent terminals M (2i-1) and M (2i) are selected, and as shown in FIG. 10, a current is passed between these two terminals via a current supply terminal 17, the two terminals are connected. Continuum-shaped conductor pattern 22
A magnetic field indicated by a broken line 11 is generated around the. In other words, the recording layer portions 12, 19, and 20 formed between the patterns have
The bias magnetic field 13 can be applied in the vertical direction. The application direction and magnitude of this bias magnetic field can be easily selected by changing the direction and magnitude of the current flowing between the two terminals.
従って、第10図に示すように、レーザビーム14を、簾
状の導電体パターン23の磁界発生部M1,M2,〜ガイドトラ
ックとして、その長さ方向に相対的に平行移動させなが
ら、前記磁界発生部M1,M2,〜の間にある記録層12,19,20
に照射して、記録層12,19,20の温度をキュリー温度Tc以
上(約220℃)に上昇させ、同時に、着磁するタイミン
グに合わせて前記二端子間に流す電流を、スイチングす
ることによって、記録層12,19,20の冷却過程で、記録層
12,19,20には、記録信号に対応した所望の磁化状態を実
現することができる。Therefore, as shown in FIG. 10, the laser beam 14 is used as the magnetic field generating portions M1, M2 of the blind-shaped conductor pattern 23, the guide tracks, while being relatively translated in the longitudinal direction thereof, Recording layers 12, 19, and 20 between generating portions M1, M2, and
To raise the temperature of the recording layers 12, 19, 20 to the Curie temperature Tc or more (about 220 ° C.), and at the same time, by switching the current flowing between the two terminals in synchronization with the magnetizing timing. During the cooling process of the recording layers 12, 19, 20
A desired magnetization state corresponding to the recording signal can be realized in 12, 19, and 20.
このように、光磁気記録媒体を用いた記録動作では、
記録磁化方向は記録層の初期磁化方向にはよらず、バイ
アス磁界の方向によって決まるため、通常の磁気記録と
同様に、記録磁化の重ね書き、つまりオーバーライトが
可能である。また二端子パターンのインダクタンスは数
マイクロヘンリーオーダにすることが出来るので、メガ
ヘルツオーダの高速の電流スイッチングも可能である。Thus, in the recording operation using the magneto-optical recording medium,
Since the recording magnetization direction does not depend on the initial magnetization direction of the recording layer but is determined by the direction of the bias magnetic field, overwriting of recording magnetization, that is, overwriting, is possible as in normal magnetic recording. Moreover, since the inductance of the two-terminal pattern can be set to several microhenries, high-speed current switching of megahertz order is also possible.
また、簾状の導電体パターン23を用いる場合はすべて
の記録層12,19,20が利用できるので折り返し状より効率
がよい。Further, when the blind-shaped conductor pattern 23 is used, all the recording layers 12, 19, 20 can be used, and therefore the efficiency is higher than that of the folded shape.
ここで、前記電流体は、記録層の膜組成に応じて、数
十〜数百mAの範囲で適宜選択される。導電体パターンの
高さ、ピッチおよび長さ等の形状は、上述の物に限定さ
れるものではなく、所望の記録媒体の記録密度及びバイ
アス磁界の大きさに応じて、適宜選定される。導電体パ
ターンの高さとしては、数千Å、ピッチとしては、数μ
mオーダが望ましい。絶縁層及び保護層として用いられ
る誘電体としては、Si3N4の他に、AlN,SiO2,SiO等を数
百〜数千Åの厚さに形成したものが用いられる。Here, the current body is appropriately selected in the range of several tens to several hundreds mA depending on the film composition of the recording layer. The shape of the conductor pattern, such as the height, pitch, and length, is not limited to the above-mentioned ones, but is appropriately selected according to the desired recording density of the recording medium and the magnitude of the bias magnetic field. The height of the conductor pattern is several thousand mm, and the pitch is several μm.
m order is desirable. As the dielectric used as the insulating layer and the protective layer, in addition to Si 3 N 4 , one formed of AlN, SiO 2 , SiO, or the like to have a thickness of several hundreds to several thousand degrees is used.
また、上述の付着層5′は、絶縁層4′と導電体層6
との付着力が十分強い場合は付着パターン5がなくとも
絶縁パターン4と導電体パターン6は十分に付着するた
め必ずしも必要ではない。In addition, the above-mentioned adhesion layer 5'includes the insulating layer 4'and the conductor layer 6 '.
When the adhesion force is sufficiently strong, the insulating pattern 4 and the conductor pattern 6 are sufficiently adhered even if the adhesion pattern 5 is not provided, so that it is not always necessary.
本発明の光磁気カード記録媒体は、導電体パターンを
追加することにより、この導電体パターンに流す電流に
よってバイアス磁界を発生し記録磁化方向を制御できる
ため、直接オーバーライトが達成できるので、記録過程
を簡単化できるとともに高速化も達成できるという効果
がある。In the magneto-optical card recording medium of the present invention, by adding a conductor pattern, a bias magnetic field can be generated by a current flowing in the conductor pattern to control the recording magnetization direction, so that direct overwrite can be achieved. There is an effect that the speed can be achieved while simplifying the process.
第1図は、本発明の第1の実施例を示す平面図、第2図
は第1図に示す光磁気記録媒体の部分斜視図、第3図は
第2図に示す光磁気記録媒体の断面図、第4図(a),
(b)は第1図〜第3図に示す導電体パターンの作成法
を示す斜視図、第5図は第1図に示す実施例の動作を説
明するための動作説明図、第6図は本発明の第2の実施
例を示す平面図、第7図は第6図に示す光磁気記録媒体
の部分斜視図、第8図は第7図に示す光磁気記録媒体の
部分断面図、第9図(a),(b)は第6図〜第8図に
示す導電体パターンの作成方法を示す斜視図、第10図は
第6図に示す実施例の動作を説明するための動作説明図
である。 1……基体、2,21,……光磁気記録媒体、3,22……選択
回路、4,24……絶縁パターン、5,25……付着パターン、
4′,7……絶縁層、5′……付着層、6,23……導電体パ
ターン、6′……導電体層、8,12,19,20……記録層、9
……保護層、10……レジストパターン、11……磁界、13
……バイアス磁界、14……レーザビーム、15……レン
ズ、16……入力信号端子、17……電流供給端子、18……
通電方向、M1,M2,〜M(2n)……磁界発生部、C1,C2,〜
Cn,CT……共通接続部。FIG. 1 is a plan view showing a first embodiment of the present invention, FIG. 2 is a partial perspective view of the magneto-optical recording medium shown in FIG. 1, and FIG. 3 is a magneto-optical recording medium shown in FIG. Sectional view, FIG. 4 (a),
(B) is a perspective view showing a method for forming the conductor pattern shown in FIGS. 1 to 3, FIG. 5 is an operation explanatory view for explaining the operation of the embodiment shown in FIG. 1, and FIG. FIG. 7 is a plan view showing a second embodiment of the present invention, FIG. 7 is a partial perspective view of the magneto-optical recording medium shown in FIG. 6, and FIG. 8 is a partial sectional view of the magneto-optical recording medium shown in FIG. 9 (a) and 9 (b) are perspective views showing a method for forming the conductor pattern shown in FIGS. 6 to 8, and FIG. 10 is an operation explanation for explaining the operation of the embodiment shown in FIG. FIG. 1 ... Substrate, 2,21, ... Magneto-optical recording medium, 3,22 ... Selection circuit, 4,24 ... Insulation pattern, 5,25 ... Adhesion pattern,
4 ', 7 ... insulating layer, 5' ... adhesion layer, 6, 23 ... conductor pattern, 6 '... conductor layer, 8, 12, 19, 20 ... recording layer, 9
... Protective layer, 10 ... Resist pattern, 11 ... Magnetic field, 13
...... Bias magnetic field, 14 ...... Laser beam, 15 ...... Lens, 16 ...... Input signal terminal, 17 ...... Current supply terminal, 18 ......
Energizing direction, M1, M2, to M (2n) ... magnetic field generator, C1, C2, to
Cn, CT: Common connection.
Claims (2)
整数)本の磁界発生部と、nは、1、2、・・・Nの1
つであり、(2n−1)番目の磁界発生部と(2n)番目の
磁界発生部を他端で接続する共通接続部からなる導電体
パターンと、 この導電パターンと前記基体表面を覆う絶縁層と、 この絶縁層上に設けられ、膜面の垂直方向に磁気異方性
を有する記録層と、 この記録層を覆う保護層と、 前記記録層に記録するための磁界を発生すべく、前記
(2n−1)番目の磁界発生部と前記(2n)番目の磁界発
生部に通電する選択回路とを含むことを特徴とする光磁
気カード記録媒体。1. A base, 2N (N is an integer) magnetic field generators provided on the base and provided in parallel with each other, and n is 1, 2,.
A conductor pattern comprising a (2n-1) th magnetic field generating portion and a common connection portion connecting the (2n) th magnetic field generating portion at the other end; and an insulating layer covering the conductive pattern and the surface of the base. A recording layer provided on the insulating layer and having magnetic anisotropy in a direction perpendicular to the film surface; a protective layer covering the recording layer; and a magnetic field for recording on the recording layer. A magneto-optical card recording medium, comprising: a (2n-1) th magnetic field generating unit; and a selection circuit for energizing the (2n) th magnetic field generating unit.
整数)本の磁界発生部と、このM本の磁界発生部を他端
で接続する共通接続部からなる導電体パターンと、 この導電パターンと前記基体表面を覆う絶縁層と、 この絶縁層上に設けられ、膜面の垂直方向に磁気異方性
を有する記録層と、 この記録層を覆う保護層と、 mは、(M−1)以下の整数であり、前記記録層に記録
するための磁界を発生すべく、m番目の磁界発生部と
(m+1)番目の磁界発生部に通電する選択回路とを含
むことを特徴とする光磁気カード記録媒体。2. A base, an M (M is an integer) magnetic field generating section provided on the base and provided in parallel with each other, and a common connection section connecting the M magnetic field generating sections at the other end. An insulating layer covering the conductive pattern and the surface of the base; a recording layer provided on the insulating layer and having magnetic anisotropy in a direction perpendicular to the film surface; and a protection covering the recording layer. And m is an integer equal to or less than (M-1), and is selected to energize the m-th magnetic field generator and the (m + 1) -th magnetic field generator in order to generate a magnetic field for recording on the recording layer. A magneto-optical card recording medium including a circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63159675A JP2615866B2 (en) | 1988-06-27 | 1988-06-27 | Magneto-optical card recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63159675A JP2615866B2 (en) | 1988-06-27 | 1988-06-27 | Magneto-optical card recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH029037A JPH029037A (en) | 1990-01-12 |
JP2615866B2 true JP2615866B2 (en) | 1997-06-04 |
Family
ID=15698876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63159675A Expired - Lifetime JP2615866B2 (en) | 1988-06-27 | 1988-06-27 | Magneto-optical card recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2615866B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5327144A (en) * | 1993-05-07 | 1994-07-05 | Associated Rt, Inc. | Cellular telephone location system |
US7036739B1 (en) * | 1999-10-23 | 2006-05-02 | Ultracard, Inc. | Data storage device apparatus and method for using same |
-
1988
- 1988-06-27 JP JP63159675A patent/JP2615866B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH029037A (en) | 1990-01-12 |
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