JP2604178B2 - Resin-sealed optical coupling semiconductor device and method of manufacturing the same - Google Patents

Abstract

PURPOSE:To obtain a resin sealed photocoupled semiconductor device with excellent dielectric strength and moisture proof and whose photoconductive efficiency is not damaged by integrating a transmissive silicon hardened body, in which a semiconductor light emitting element and a semiconductor light receiving element are buried, with a sealing resin by bonding, while interposing a ultraviolet irradiation processing layer formed on such hardened silicon. CONSTITUTION:By optically coupling a semiconductor light emitting element 1 which is connected to an inner lead part 8 of an external connection lead 4 by a conductive material and a semiconductor light receiving element 2 which is connected to the inner lead part 8 of the external connection lead 4 by the conductive material, together with a part of the conductive material which is adjacent at least to the semiconductor elements 1, 2 and a part of the inner lead 8 in which the semiconductor elements 1, 2 are mounted, which is adjacent at least to semiconductor elements 1, 2, while burying them while bonding in a transmissive hardened silicone 5, a sealing resin 7 is formed by sealing the hardened silicone 5 together with the remainder of the inner lead part 8. In such a resin sealed semiconductor device, the silicon hardened body 5 is integrated by being bonded to the sealing resin 7 while interposing a ultraviolet irradiation processing layer 6 formed thereupon.

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated optically coupled semiconductor device and a method of manufacturing the same, and more particularly, to a cured silicone body in which a semiconductor light emitting element and a semiconductor light receiving element are transparent. The present invention relates to a resin-encapsulated optically coupled semiconductor device optically coupled with a resin.

[Conventional technology]

An optical coupling semiconductor device receives light (input-side electric signal) emitted from a semiconductor light-emitting element by a semiconductor transmitting / receiving element and transmits an electric signal to an output side. Only a signal is electrically isolated during input / output. This is a device for transmitting.

Optically coupled semiconductor devices are used as non-contact switches in communication devices, computers, and the like, and tend to be frequently used in the future.

In an optical coupling semiconductor device, a semiconductor light emitting element and a semiconductor light receiving element are optically coupled by a transparent silicone cured body,
A typical example is a resin-encapsulated semiconductor device in which the cured silicone is sealed with a sealing resin.

In a resin-encapsulated optically coupled semiconductor device, a semiconductor light-emitting element and a semiconductor light-receiving element are opposed to each other, and an opposing type in which the two elements are optically coupled by a transparent silicone cured body (Japanese Patent Laid-Open No. JP-A-59-220981), a semiconductor light emitting element and a semiconductor light receiving element are arranged in a parallel position, and both elements are embedded in a translucent cured silicone body, and a sealing resin surface covering the silicone cured body is covered. There is a reflection type optically coupled using reflection hardening (see JP-A-59-204285). In order to improve the withstand voltage of the opposed type, an insulating resin film is placed in the silicone cured body between the semiconductor light emitting element and the semiconductor light receiving element so as to bisect the silicone cured body into the light emitting element side and the light receiving element side. With an interposed structure, that is, an insulating film interposed type (JP-A-61-21)
No. 4585) is known.

[Problems to be solved by the invention]

However, in both the opposing resin-encapsulated optically coupled semiconductor device and the reflection-type resin-encapsulated optically coupled semiconductor device, the silicone cured body, which is the optical path material layer, and the encapsulating resin seemingly adhere to each other. Then, there is a problem that the dielectric strength is low because of the separation. That is, when a high voltage is applied between the external connection lead wire on the light emitting element side and the external connection lead wire on the light receiving element side, discharge occurs in the gap between the interface between the cured silicone and the sealing resin, and the semiconductor light emitting element There has been a problem that the semiconductor light receiving element is destroyed, or dielectric breakdown occurs at the interface between the silicone cured product and the sealing resin, thereby destroying the semiconductor light emitting element and the semiconductor light receiving element. In addition, there is a problem that the moisture resistance is low.

The insulation-film-interposed type, which is an improved product of the opposing resin-encapsulated optical coupling semiconductor device, has insufficient withstand voltage due to insufficient adhesion between the cured silicone body and the insulation film. There is a problem that light transmission efficiency is low due to light reflection.

The present invention solves the problems of such a conventionally known resin-encapsulated optically coupled semiconductor device, that is, a resin-encapsulated optically coupled semiconductor device having excellent withstand voltage and moisture resistance and not impairing the photoconductive efficiency. It is an object of the present invention to provide a manufacturing method thereof.

[Means for solving the problem]

These objects are as follows: I. A semiconductor light-emitting element electrically connected to the inner lead portion of the external connection lead wire by a conductive member and a semiconductor electrically connected to the inner lead portion of the external connection lead wire by a conductive member. A light-receiving element is optically coupled with at least a portion of these conductive members adjacent to the element and at least a portion of these inner leads adjacent to the element in a transparent silicone cured body in an adhesive state. A resin-encapsulated optically-coupled semiconductor device in which the cured silicone is molded with a sealing resin together with the remainder of the inner leads, wherein the cured silicone is a curable / self-adhesive silicone. After curing the composition in a cured state to have silicon-bonded hydrogen atoms and / or silicon-bonded hydrolysable groups, or Characterized by being formed by irradiating ultraviolet rays while being cured, by bonding the silicone cured body to the sealing resin through an ultraviolet irradiation treatment layer on its surface so as to be integrated therewith. , And II.
The semiconductor light emitting element electrically connected to the inner lead portion of the external connection lead wire by the conductive member and the semiconductor light receiving element electrically connected to the inner lead portion of the external connection lead wire by the conductive member are referred to as these. After at least a portion of the conductive member close to the element and a portion of the inner lead portion close to the element are buried in a translucent silicone cured body in an adhesive state and optically bonded, the silicone cured body is removed. In a method of manufacturing a resin-sealed optically coupled semiconductor device by sealing and forming with a sealing resin together with the remainder of the inner lead portion,
The curable / self-adhesive silicone composition is cured under heating so as to have a silicon-bonded hydrogen atom and / or a silicon-bonded hydrolyzable group in a cured state, or is irradiated with ultraviolet rays while being cured under heating. It is achieved by forming.

The opposing type and the reflection type are typical examples of the resin-sealed optical coupling semiconductor device of the present invention.

In the facing type, the inner lead portion of the external connection lead wire and another inner lead portion are arranged in parallel at a distance, and the semiconductor light emitting element is mounted on the inner surface of one inner lead portion, and the other The semiconductor light receiving element is mounted on the inner surface of the inner lead portion, and the active area surface of the semiconductor light emitting element and the active area surface of the semiconductor light receiving element face each other.

The semiconductor light emitting element is electrically connected to an inner lead portion on which the semiconductor element is not mounted by a conductive member, for example, a bonding wire, and the semiconductor light emitting element is mounted on the inner lead portion by a conductive member, for example, a bonding wire. Not electrically connected to another inner lead.

In the reflection type, the inner lead portion of the external connection lead wire and another inner lead portion are arranged at substantially the same height at a distance, and the semiconductor light emitting element is mounted on the upper surface of one of the inner lead portions, The semiconductor light receiving element is also mounted on the upper surface of the other inner lead portion, and the active area surface of the semiconductor light emitting element and the active area surface of the semiconductor light receiving element face in the same direction.

The semiconductor light emitting element is electrically connected to an inner lead portion on which the semiconductor element is not mounted by a conductive member, for example, a bonding wire, and the semiconductor light receiving element is not provided with the semiconductor element by a conductive member, for example, a bonding wire. It is electrically connected to another inner lead part.

In each of the opposed type and the reflective type, a semiconductor light emitting element and a conductive member, for example, at least a portion of a bonding wire close to the semiconductor light emitting element and at least an inner lead portion on which the semiconductor light emitting element is mounted is close to the semiconductor light emitting element. And a portion of the semiconductor light emitting element and the conductive member, for example, at least a portion of the bonding wire close to the semiconductor light receiving element and a portion of the inner lead portion on which the semiconductor light receiving element is mounted, at least a portion close to the semiconductor light receiving element, It is embedded in the same translucent silicone cured product in an adhesive state.

In other words, the light-transmitting cured silicone material is used as a semiconductor light-emitting element, a conductive member, for example, at least a portion of a bonding wire close to the semiconductor light-emitting element and at least a semiconductor light-emitting part of an inner lead portion on which the semiconductor light-emitting element is mounted. A portion close to the element, and at least a portion of the semiconductor light-receiving element and the conductive member, for example, a bonding wire near the semiconductor light-receiving element, and at least a portion of the inner lead portion on which the semiconductor light-receiving element is mounted, and Glued to the part.

The conductive member may be entirely embedded in the cured silicone body for both the facing type and the reflecting type. Most of the inner lead portion on which the semiconductor light emitting element is mounted and the inner lead portion on which the semiconductor light receiving element is mounted may be mostly buried in the cured silicone body. In addition, most of the inner leads connected to the conductive member may be embedded in the cured silicone body. In both the facing type and the reflection type, the surface of the cured silicone body is subjected to an ultraviolet irradiation treatment.

The cured silicone body having the ultraviolet irradiation treatment layer on its surface is resin-molded with a sealing resin together with the remaining inner lead portion and optionally the remaining conductive member,
It is adhered and integrated with the sealing resin via the ultraviolet irradiation treatment layer.

Here, the bonding and integration means that even when a thermal stress or a mechanical stress is applied, the silicone cured body and the sealing resin do not peel at the interface, and if the silicone cured body is to be peeled off, It means that any one of the sealing resin and the sealing resin is so strongly bonded that it is broken.

The translucent cured silicone body may be colored as long as the light emitted from the semiconductor light emitting element reaches the semiconductor light receiving element and has a light transmissivity enough to be perceived as a signal.

The translucent silicone cured product is obtained by curing a curable / self-adhesive silicone composition by one or more means such as standing at room temperature, heating, infrared irradiation, and electron beam irradiation. The former form may be any of liquid, paste, rice cake, powder and granule, solid at room temperature. The translucent silicone cured product may be in the form of a hard resin, rubber, or gel at room temperature, or any of these intermediate properties, but the hard range is most preferable in terms of dielectric strength, and the rubber-like Is preferred.

Silicone cured products include silicone cured products having silicon-bonded hydrogen atoms in the cured state, silicone cured products having silicon-bonded hydrolyzable groups in the cured condition, and silicon-bonded hydrogen atoms and silicon-bonded hydrolyzable compounds in the cured condition. It must be a cured silicone having a group.

The silicone cured product of (1) is mainly composed of, for example, a vinyl group-containing organopolysiloxane, an organohydrogenpolysiloxane and a platinum compound catalyst, and has a ratio such that a silicon compound-bonded hydrogen atom has a large excess with respect to a silicon atom-bonded vinyl group. Oxidized and self-adhesive silicone compositions formulated in the above.

Examples of the silicone cured product include: a vinyl group-containing organopolysiloxane, an organohydrogenpolysiloxane, a reactive adhesion promoter (for example, vinyltrialkoxysilane, allyltrialkoxysilane or r-methacryloxypropyltrialkoxysilane) and There is one obtained by curing a curable / self-adhesive silicone composition containing a platinum compound catalyst as a main component.

Examples of the silicone cured product of the above include, for example, a vinyl group-containing organopolysiloxane, an organohydrogenpolysiloxane and a reactive adhesion promoter (for example, vinyl trialkoxysilane allyl trialkoxysilane or r-methacryloxypropyl trialkoxysilane) and platinum. Curable and self-adhesive silicone compositions containing a compound catalyst as a main component and blended in such a ratio that silicon-bonded hydrogen atoms are excessively large relative to silicon-bonded vinyl groups are cured.

These silicone compositions may contain an addition reaction retarder, a reinforcing filler, a bulking filler, a heat-resistant agent, and the like, but are preferably those which do not hinder the light transmission. Also, the content of impurities which adversely affect semiconductor characteristics, particularly alkali metal and halogen ions, is desirably 1 ppm or less, and the total content of radioactive elements such as uranium and thorium is 0.1 ppb or less from the viewpoint of preventing soft errors due to α rays. desirable.

It is necessary that the translucent cured silicone material completely fills the optical path between the semiconductor light emitting element and the semiconductor light receiving element.

The optical path distance in the facing type is usually 100 μm to 20,000 μm, and is preferably as small as possible in order to efficiently transmit a signal from the semiconductor light emitting element to the semiconductor light receiving element.
The thickness of the silicone cured body in the reflection type ensures that the surface of both semiconductor elements, the portion of the conductive member close to the semiconductor element, and at least the portion of the inner lead portion on which both semiconductor elements are mounted are close to both semiconductor elements As long as it is possible, it is preferably several tens μm or more, and usually
It is about 10 to 10,000 μm.

It is an important component of the present invention that the surface of the cured silicone body is subjected to the ultraviolet irradiation treatment, and is extremely important for ensuring adhesion and integration with the sealing resin covering the surface of the cured silicone body. is important.

Ultraviolet rays used for the irradiation treatment are ordinary high-intensity ultraviolet rays, and examples of the light source include an ultra-high pressure mercury lamp, a high pressure mercury lamp, and a xenon mercury lamp. Further, the irradiation amount of the ultraviolet ray varies depending on the properties of the cured silicone material, but is usually 10
About 300 ~ by UV lamp with power of 0 ~ 3000W
Irradiation may be performed for 1 second, but irradiation for 180 to 30 seconds is preferable.

When the cured silicone is formed from a cured product of a thermosetting / self-adhesive silicone composition, the surface may be irradiated with ultraviolet rays while heating the silicone composition. This heating may be performed by ordinary heating or by the heat of a light source lamp used for ultraviolet irradiation.

Next, the encapsulating resin may be any organic resin that does not adversely affect the characteristics and reliability of the semiconductor, such as a thermoplastic resin represented by polyphenylene sulfide resin, an epoxy resin, a silicone resin, and a phenol resin. There are thermosetting resins and the like. The form of the sealing resin before being provided for sealing may be any of liquid, paste, solid, and powder at room temperature, and often contains a filler and other additives in addition to the so-called resin. The thermosetting resin further contains a curing agent.

In order to manufacture the resin-sealed optical coupling semiconductor device of the present invention, for the facing type, for example, the semiconductor light receiving element is mounted on the inner lead portion, and the inner lead portion different from the semiconductor light receiving element is a conductive member. A bonding wire, for example, one electrically connected by a gold wire or an aluminum wire is prepared, and at least a portion of the semiconductor light receiving element and the conductive member which is close to the semiconductor light receiving element and an inner member on which the semiconductor light receiving element is mounted. The curable / self-adhesive silicone composition described above is applied so as to cover at least a portion of the lead close to the semiconductor light receiving element, and then the semiconductor light emitting element is mounted on the inner lead portion, and the semiconductor light emitting element and Another inner lead portion is a bonding wire that is a conductive member, for example, one electrically connected by a gold wire or an aluminum wire, The curable silicone composition is placed on the curable silicone composition such that the active area surface of the conductive light emitting element faces the active area surface of the semiconductor light receiving element, and then the curable silicone composition is cured under heating to form the cured silicone. The surface of the body is irradiated with ultraviolet light, or the curable / self-adhesive silicone composition is cured by heating while irradiating with ultraviolet light to form a transparent silicone cured product having an ultraviolet irradiation treatment layer on the surface. The silicone cured body, the remainder of the inner lead portion and, if necessary, the remainder of the conductive member may be molded with a sealing resin.

Alternatively, the semiconductor light-emitting element is mounted on the inner lead portion, the semiconductor light-emitting element and another inner lead portion are electrically connected by a conductive member, and the semiconductor light-receiving element is mounted on the inner lead portion, and the semiconductor light-receiving element is mounted. An element and another inner lead portion electrically connected by a conductive member are arranged so that the active area surface of the semiconductor light emitting element and the active area surface of the semiconductor light receiving element face each other with a distance therebetween. The space between them may be filled with the cured / self-adhesive silicone composition, and then the same operation as described above may be performed.

A semiconductor light emitting device is mounted on an inner lead portion, and a semiconductor light emitting device and an inner lead portion are electrically connected by a conductive member, and a semiconductor light receiving device is mounted on the inner lead portion. The parts electrically connected by a conductive member are arranged in parallel so that the active regions of both semiconductor elements face the same direction and have substantially the same height. At least a portion close to both semiconductor elements and at least a part close to both semiconductor elements of both inner lead portions mounted on both semiconductor elements are embedded in the curable / self-adhesive silicone composition. A curable / self-adhesive silicone composition is applied, and then the curable silicone composition is cured by heating, and the surface of the cured silicone product is irradiated with ultraviolet light. The composition may be treated or cured by heating while irradiating the curable silicone composition with ultraviolet rays, and then the silicone cured product, the remaining portion of the inner lead portion, and optionally the remaining portion of the conductive member may be sealed and molded with a sealing resin. .

The curable / self-adhesive silicone composition used here is preferably a thermosetting / self-adhesive one from the viewpoint of productivity.

Methods for applying the curable / self-adhesive silicone composition include dropping, pouring, coating, spraying, and dipping. Methods for encapsulating with a sealing resin include transfer molding, injection molding, powder coating, There is injection into the case. The resin-encapsulated optically coupled semiconductor device of the present invention is extremely effective for computers, communication devices, and the like.

〔Example〕

Next, an example of the present invention and a comparative example showing the prior art will be described. "Parts" means parts by weight. Viscosity is 25 ° C
Is the value at.

In the initial withstand voltage test, a non-defective product rate was calculated by applying a voltage of 5.0 KV between the external connection lead wire on which the semiconductor light emitting element was mounted and the external connection lead wire on which the semiconductor light receiving element was described.

In the dielectric strength test, the applied voltage between both lead wires was 3.0KV,
The non-defective rate was calculated as 5.0 KV, 8.0 KV, 10.0 KV for 10 seconds each.

In the moisture resistance test, the semiconductor device was (1) heated to 120 ° C and 2 atm.
Or (2) left at 120 ° C. and 2 atm for 300 hours, and then applied a voltage of 5 KV between both lead wires for 10 seconds to calculate the yield rate.

Embodiment 1 FIG. 1 is a cross-sectional view of a reflective resin-sealed optical coupling semiconductor device according to one embodiment of the present invention. This semiconductor device includes a semiconductor light emitting element 1, a portion of a gold bonding wire 3 close to the semiconductor light emitting element 1 and an inner lead portion 8.
Among the portions close to the semiconductor light-emitting element 1, the semiconductor light-emitting element 2, the portion of the gold bonding wire 3 close to the semiconductor light-receiving element 2, and the part of the inner lead portion 8 close to the semiconductor light-receiving element 2. a) A dimethylvinylsiloxy group-blocked methylphenylsiloxane-dimethylsiloxane copolymer at both ends (molar ratio of methylphenylsiloxane unit to dimethylsiloxane unit is 1: 9, viscosity 2000 c.p.) 100 parts (b) Trimethylsiloxy at both ends Group-blocked methylhydrogenpolysiloxane (viscosity: 20 c.p.) 3.0 parts (c) Allyltrimethoxysilane 2.0 parts (d) Complex salt of chloroplatinic acid and divinyltetramethyldisiloxane It becomes 5.0 ppm of the total composition as platinum atoms. Addition-curable, self-adhesive silicone rubber composition [silicon-bonded hydrogen atom and (a) The molar ratio of the vinyl groups in the minute 2: dropwise with 1 a is], and cured at a constant temperature of 100 ° C. 10 min, the resulting translucent silicone rubber cured product 5
Is placed at a distance of 6 cm from a 3000 W ultra-high pressure mercury lamp and irradiated with ultraviolet light for 90 seconds to form an ultraviolet irradiation treatment layer 6 on the surface of the cured silicone rubber body 5, and then the remaining portion of the bonding wire 3 and the remaining portion of the inner lead portion 8. It is manufactured by sealing molding with a commercially available sealing epoxy resin 7 together with an inner lead portion (not shown) to which the bonding wire 3 is connected.

The translucent cured silicone rubber 5 is a semiconductor light emitting device.
1, the semiconductor light emitting element 2 and the bonding wire 3 are firmly adhered to the portion adjacent to both elements and the inner lead portion 8 to the portion adjacent to both elements.
It was firmly bonded and integrated with the sealing epoxy resin 7 covering the top.

This resin-encapsulated optically coupled semiconductor device exhibited a non-defective rate of 100% in the initial withstand voltage test, and maintained a non-defective rate of 95% in the withstand voltage test even when 10 KV was applied (see FIG. 5).

The defective product analysis revealed that the electrical breakdown occurred inside the silicone rubber cured body 5.

 The results shown in Table 1 were obtained in the moisture resistance test.

The dielectric strength of the cured silicone rubber itself is 10
It was KV / mm.

<Comparative Example 1> FIG. 2 is a cross-sectional view of a conventional reflection-type resin-sealed optical coupling semiconductor device. This semiconductor device is a semiconductor light emitting element
1, 100 parts of the component (a) of Example 1 and (b) in the portion of the semiconductor light receiving element 2 and the gold bonding wire 3 adjacent to both elements and the portion of the inner lead portion 8 adjacent to both elements.
An addition reaction-curable silicone rubber composition consisting of only 1.0 part of the component and the amount of the component (d) as platinum atoms of 5.0 ppm of the total composition as platinum atoms was added dropwise, and the composition was cured by keeping the composition at 100 ° C. for 10 minutes. The translucent silicone rubber cured body 5 is sealed with a commercially available sealing epoxy resin 7 together with the remaining portion of the bonding wire 3, the remaining portion of the inner lead portion 8, and the inner lead portion (not shown) to which the bonding wire 3 is connected. It is manufactured by forming.

The translucent cured silicone rubber 5 is a semiconductor light emitting device.
1, the semiconductor light receiving element 2 and the bonding wire 3 are slightly adhered to the portion close to both elements and the inner lead portion 8 to the portion close to both elements, and seemingly closely contact with the sealing epoxy resin 7 covering the upper portion. However, when observed with a microscope, there were fine gaps and no adhesion was observed.

This resin-encapsulated optically coupled semiconductor device showed a good product rate of 75% in the initial withstand voltage test, and a good product rate of 50% with the application of 8 KV in the withstand voltage test (see FIG. 5).

As a result of the defective product analysis, it was found that the electrical breakdown occurred at the interface between the cured silicone rubber 5 and the epoxy resin 7 for sealing. The results shown in Table 1 were obtained in the pressure resistance test.

The dielectric breakdown strength of the cured silicone rubber itself is 1
It was 1.2 KV / mm.

<Example 2> In the method of manufacturing the resin-sealed optically coupled semiconductor device of Example 1, the addition reaction-curable, self-adhesive silicone rubber composition was prepared as follows: (a) Methylphenylsiloxane-dimethyl-terminated at both ends dimethylvinylsiloxy group A mixture of 80 parts of a siloxane copolymer (the molar ratio of dimethylsiloxane units to methylphenylsiloxane units is 9: 1, viscosity 2000 c.p.) and 20 parts of hydrophobized fumed silica having a specific surface area of 200 m ² / g (viscosity 95,000 c.p. p.) 100 parts (b) 4.0 parts of methylhydrogen polysiloxane (viscosity 20 c.p.) capped with a trimethylsiloxy group at both terminals (c) Complex salt of chloroplatinic acid and divinyltetramethyldisiloxane 5.0 parts of the total composition as platinum atoms The amount is set to be ppm (the molar ratio of silicon-bonded hydrogen atoms to vinyl groups in component (a) is 4: 1). A cured body 5 of the sex of the silicone rubber the distance of the super-high pressure mercury lamp and 15cm, the ultraviolet irradiation time
A reflection-type resin-encapsulated optically coupled semiconductor device was manufactured under the same conditions as in the example except that the time was set to 60 seconds.

The translucent cured silicone rubber 5 is a semiconductor light emitting device.
1, the semiconductor light receiving element 2 and the bonding wire 3 are firmly adhered to the portion close to both elements and the inner lead portion 8 to the portion close to both elements.
It was firmly bonded and integrated with the sealing epoxy resin 7 covering the top.

This resin-encapsulated optically coupled semiconductor device exhibited a good product rate of 100% in the initial withstand voltage test, and maintained a good product rate of 95% in the dielectric withstand voltage test even when 10 KV was applied.

As a result of the defective product analysis, it was found that the electrical breakdown occurred inside the cured silicone rubber 5.

 The results shown in Table 1 were obtained in the moisture resistance test.

The dielectric strength of the cured silicone rubber itself is 15
It was KV / mm.

<Comparative Example 2> The same conditions as in Example 2 except that the ultraviolet irradiation treatment of the translucent cured silicone rubber 5 was omitted in the method of manufacturing the reflective resin-sealed optical coupling semiconductor device of Example 2 In this way, a reflection-type resin-sealed optical coupling semiconductor device was manufactured.

The translucent cured silicone rubber 5 is a semiconductor light emitting device.
1, the semiconductor light-receiving element 2 and the bonding wire 3 were firmly adhered to the portion close to both elements and the inner lead portion 8 to the portion close to both elements.
At first glance, it was close, but when carefully observed with a microscope, there were small gaps in some places and they were not adhered.

This resin-encapsulated optically coupled semiconductor device shows a good product rate of 75% in the initial withstand voltage test, and 75% in 8 KV application in the withstand voltage test.
% Of non-defective products.

The defective product analysis revealed that the electrical breakdown occurred at the interface between the cured silicone rubber 5 and the epoxy resin 7 for sealing.

 The results shown in Table 1 were obtained in the moisture resistance test.

The dielectric strength of the cured silicone rubber itself is 1
It was 6.8 KV / mm.

Embodiment 3 FIG. 3 is a cross-sectional view of an opposing resin-sealed optical coupling semiconductor device according to an embodiment of the present invention.

The semiconductor device includes a semiconductor light emitting element 1, a portion of a gold bonding wire 3 close to the semiconductor light emitting element 1, and an inner lead portion 8 on which the semiconductor light emitting element 1 is mounted.
The semiconductor light receiving element 2, the semiconductor light receiving element 2, the gold bonding wire 3, the part close to the semiconductor light receiving element 2, and the semiconductor light receiving element 2 in the inner lead portion 8. (A) A methylphenylsiloxane-dimethylsiloxane copolymer having both ends dimethylvinylsiloxy group-blocked (molar ratio of methylphenylsiloxane unit to dimethylsiloxane unit is 1: 9, viscosity is 2000 c.p.) 100 parts (b) Methyl hydrimediene polysiloxane capped with trimethylsiloxy groups at both terminals (viscosity: 20 c.p.) 1.0 part (c) γ-methacryloxypropyltrimethoxysilane
2.0 parts (d) Complex salt of chloroplatinic acid and divinyltetramethyldisiloxane An addition-reaction-curable, self-adhesive silicone rubber composition (silicon-bonded hydrogen atom) consisting of platinum atoms in an amount of 5.0 ppm of the total composition. And the molar ratio of the vinyl groups in the component (a) is 3: 1], and the mixture is cured at 100 ° C. for 20 minutes.
Was placed at a distance of 15 cm from a 3000 W ultra-high pressure mercury lamp and irradiated with ultraviolet light for 90 seconds to form an ultraviolet irradiation treatment layer 6 on the surface of the silicone rubber cured body 5, and then the remaining inner lead portion 8 and the bonding wire 3 were connected. Epoxy resin 7 for sealing which is commercially available together with the inner lead portion (not shown)
It is manufactured by sealing molding.

The silicone rubber cured body 5 is firmly adhered to a portion of the semiconductor light emitting element 1, the semiconductor light receiving element 2, and the bonding wire 3 close to both elements and a part of the inner lead portion 8 close to both elements, and is irradiated with ultraviolet light. It was firmly bonded and integrated with the sealing epoxy resin 7 covering the layer 6.

This resin-encapsulated optically coupled semiconductor device exhibited a good product rate of 100% in the initial withstand voltage test, and maintained a good product rate of 95% in the dielectric withstand voltage test even when 10 KV was applied.

The defective product analysis revealed that the electrical breakdown occurred inside the silicone rubber cured body 5.

 The results shown in Table 1 were obtained in the moisture resistance test.

The dielectric breakdown strength of the cured silicone rubber itself is 1
It was 3.2 KV / mm.

Comparative Example 3 FIG. 4 is a cross-sectional view of a conventional opposed-type resin-sealed optical coupling semiconductor device.

This semiconductor device comprises a semiconductor light emitting element 1, a semiconductor light receiving element
2, 100 parts of the component (a), 0.5 part of the component (b) and (d) of the component (a) of Example 3 are provided on the portion of the gold bonding wire 3 that is close to both elements and the portion of the inner lead portion 8 that is close to both elements. ) A translucent silicone rubber formed by dropping an addition-curable silicone rubber composition consisting solely of an amount of 5.0 ppm of platinum atoms in the composition as a platinum atom, keeping at 100 ° C for 10 minutes, and curing. The hardened body 5 is manufactured by sealing molding with a commercially available sealing epoxy resin 7 together with the remaining portion of the inner lead portion 8 and the inner lead portion (not shown) to which the bonding wire 3 is connected.

The translucent cured silicone rubber 5 is a semiconductor light emitting device.
1, the semiconductor light receiving element 2 and the bonding wire 3 are slightly adhered to a portion close to both elements and to a portion close to both elements of the inner lead portion 8, and seemingly adhered to a sealing epoxy resin which covers them. However, when observed with a microscope, there were fine gaps and no adhesion was observed.

This resin-encapsulated optically coupled semiconductor device showed a non-defective rate of 90% in the initial withstand voltage test, and a non-defective rate of 80% in the dielectric withstand voltage test with 5.0 KV applied.

The defective product analysis revealed that electrical breakdown occurred at the interface between the cured silicone rubber 5 and the epoxy resin 7 for sealing.

 In the moisture resistance test, the results shown in Table 1 were obtained.

The dielectric breakdown strength of the cured silicone rubber itself is 1
It was 4.7 KV / mm.

<Example 4> In the method for manufacturing a resin-sealed optically coupled semiconductor device of Example 3, the addition reaction-curable self-adhesive silicone composition was prepared as follows. .p.) 90 parts of specific surface area 200m ² / g
Mixture consisting of 10 parts of hydrophobized fumed silica (viscosity of 80,000)
cp) 100 parts (b) Methyl hydrimediene polysiloxane capped with trimethylsiloxy groups at both ends (viscosity 20 c.p.) 3.5 parts (c) Vinyl trialkoxysilane 1.0 part (d) Complex salt of chloroplatinic acid and divinyltetramethyldisiloxane Platinum atoms in an amount of 5.0 ppm of the total composition (the molar ratio of silicon-bonded hydrogen atoms to vinyl groups in component (a) is 3: 1) was used, and the curing conditions were 100%. A facing resin-sealed optically coupled semiconductor device was manufactured in the same manner as in Example 3 except that the temperature was set to 10 ° C. and the ultraviolet irradiation time was changed to 60 seconds.

The translucent cured silicone rubber 5 is a semiconductor light emitting device.
1, an epoxy for sealing which firmly adheres to a portion of the semiconductor light receiving element 2 and the bonding wire 3 which is close to both elements and a part of the inner lead portion 8 which is close to both elements, and which covers the ultraviolet irradiation treatment layer 6 It was firmly bonded and integrated with the resin 7.

This resin-encapsulated optically coupled semiconductor device exhibited a non-defective rate of 100% in the initial withstand voltage test, and the non-defective rate in the dielectric withstand voltage test A was 100% even when 10 KV was applied.

 In the moisture resistance test, the results shown in Table 1 were obtained.

The dielectric breakdown strength of the silicone cured product itself is 16.6 KV
/ mm.

Comparative Example 4 The same method as in Example 4 was carried out except that the component (c) was not used in place of the addition-reaction-curable self-adhesive silicone rubber composition in the method of manufacturing the opposed resin-sealed optically coupled semiconductor device. Using an addition reaction-curable silicone rubber composition of the composition,
A facing-type resin-encapsulated optically coupled semiconductor device was manufactured under the same conditions except that the ultraviolet irradiation treatment on the translucent cured silicone rubber 5 was omitted.

The translucent cured silicone rubber 5 is a semiconductor light emitting device.
1, the semiconductor light receiving element 2 and the bonding wire 3 are slightly adhered to a portion close to both elements and a portion close to both elements of the inner lead portion 8, and seemingly close to an epoxy resin for sealing which covers them. However, when observed with a microscope, there were fine gaps and no adhesion was observed.

This resin-encapsulated optically-coupled semiconductor device shows a good product rate of 78% in the initial withstand voltage test, and 6
The non-defective rate was 0%.

The defective product analysis revealed that the electrical breakdown occurred at the interface between the cured silicone rubber 5 and the epoxy resin 7 for sealing.

 The results shown in Table 1 were obtained in the moisture resistance test.

The dielectric strength of the cured silicone rubber itself is 1
7.2 KV / mm.

<Example 5> In the manufacturing method of the reflection-type resin-encapsulated optical coupling semiconductor device of Example 1, the dropped addition reaction-curable self-adhesive silicone rubber composition was formed by keeping the composition at 100 ° C for 10 minutes. Instead of subjecting the translucent cured silicone rubber 5 to UV irradiation, place a 3000 W ultra-high pressure mercury lamp at a distance of 6 cm from the dropped addition-reaction-curable, self-adhesive silicone rubber composition and irradiate it with UV for 5 minutes. Thus, a reflection-type resin-encapsulated optically coupled semiconductor device was manufactured under the same conditions except that a transparent silicone rubber cured body 5 having an ultraviolet irradiation treatment layer 6 on the surface was formed. The ambient temperature during ultraviolet irradiation was 130 ° C to 150 ° C.

The translucent cured silicone rubber 5 is a semiconductor light emitting device.
1, an epoxy for sealing which firmly adheres to a portion of the semiconductor light receiving element 2 and the bonding wire 3 which is close to both elements and a part of the inner lead portion 8 which is close to both elements, and which covers the ultraviolet irradiation treatment layer 6 The resin 7 was firmly adhered and integrated.

This resin-encapsulated optically coupled semiconductor device exhibited a good product rate of 100% in the initial withstand voltage test, and maintained a good product rate of 95% in the dielectric withstand voltage test even when 10 KV was applied.

The defective product analysis revealed that the electrical breakdown occurred inside the silicone rubber cured body 5.

 The results shown in Table 1 were obtained in the moisture resistance test.

The dielectric breakdown strength of the cured silicone rubber is 10 KV / m
m.

[Effects of the Invention] In the resin-encapsulated optically coupled semiconductor device of the present invention, the light-transmitting silicone cured body as an optical path material has a semiconductor light-emitting element, a semiconductor light-receiving element, a portion close to at least both elements of a conductive member, and both of The adhesive is attached to at least the portion of the inner lead portion on which the element is mounted and adjacent to both elements, and a transparent silicone cured body is adhered to the sealing resin that covers it via an ultraviolet irradiation treatment layer and integrated. Because of this, the withstand voltage and moisture resistance are excellent, and the photoconductive efficiency does not decrease.

In the method of manufacturing a resin-encapsulated optically coupled semiconductor device according to the present invention, at least a portion of the semiconductor light emitting element, the semiconductor light receiving element, the conductive member, which is close to both elements, and at least both elements of the inner lead portion on which both elements are mounted. The adjacent portion is embedded in a curable / self-adhesive silicone composition, and then the curable / self-adhesive silicone composition is cured to form silicon-bonded hydrogen atoms and / or silicon-bonded hydrolyzable groups. After curing under heating to have, or by irradiating ultraviolet rays while curing under heating,
A transparent silicone cured body having an ultraviolet irradiation treatment is formed on the surface, and then the silicone cured body is molded with a sealing resin together with the remainder of the inner lead portion, so that a resin having excellent withstand voltage and moisture resistance is provided. There is an advantage that the sealed optical coupling semiconductor device can be manufactured with good productivity.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a reflective resin-sealed optically coupled semiconductor device according to one embodiment of the present invention, and FIG. 2 is a cross-sectional view of a conventional reflective resin-sealed optically coupled semiconductor device. . FIG. 3 is a cross-sectional view of an opposing resin-sealed optically coupled semiconductor device according to one embodiment of the present invention, and FIG. 4 is a cross-sectional view of a conventional opposed-type resin-encapsulated optically coupled semiconductor device. . FIG. 5 shows the results of the dielectric strength test. 1 ... Semiconductor light emitting element, 2 ... Semiconductor light receiving element, 3 ...
Bonding wire, 4 ... Lead wire for external connection, 5 ...
... Transparent silicone cured body, 6 ... Ultraviolet irradiation treatment layer, 7 ... Epoxy resin for sealing, 8 ... Inner lead part on which semiconductor element is mounted

Claims (6)

(57) [Claims] 1. A semiconductor light emitting device electrically connected to an inner lead portion of an external connection lead wire by a conductive member, and a semiconductor light receiving device electrically connected to an inner lead portion of the external connection lead wire by a conductive member. And at least a portion of these conductive members adjacent to the element and at least a portion of these inner leads adjacent to the element are embedded in the translucent silicone cured body in an adhesive state and optically coupled. A resin-encapsulated optically-coupled semiconductor device in which the cured silicone is sealed with a sealing resin together with the remainder of the inner lead portion, wherein the cured silicone is a curable self-adhesive silicone composition Is cured so as to have a silicon-bonded hydrogen atom and / or a silicon-bonded hydrolysable group in a cured state, or A resin-encapsulated optically-coupled semiconductor, wherein the silicone cured product is bonded to and integrated with the encapsulation resin via an ultraviolet-irradiation treatment layer on the surface thereof. apparatus. 2. The resin-encapsulated optically coupled semiconductor device according to claim 1, wherein the semiconductor light emitting element and the semiconductor light receiving element are located at opposing positions. 3. The resin-encapsulated optically coupled semiconductor device according to claim 1, wherein the semiconductor light emitting element and the semiconductor light receiving element are arranged in parallel. 4. The resin-encapsulated optically coupled semiconductor device according to claim 1, wherein the conductive member is a bonding wire. 5. A semiconductor light emitting device electrically connected to an inner lead portion of an external connection lead wire by a conductive member, and a semiconductor light emitting device electrically connected to an inner lead portion of an external connection lead wire by a conductive member. And at least a portion of these conductive members adjacent to the element and a portion of the inner lead portion adjacent to the element are embedded in a light-transmitting silicone cured body in an adhesive state and optically coupled. In a method of manufacturing a resin-encapsulated optically coupled semiconductor device by molding a silicone cured product together with a sealing resin together with the remainder of the inner lead portion, the silicone cured product is cured by a curable / self-adhesive silicone composition. The product is cured under heating so as to have a silicon-bonded hydrogen atom and / or a silicon-bonded hydrolyzable group in a cured state, or under heating. A resin-encapsulated optically-coupled semiconductor wherein the cured silicone is bonded to and integrated with the encapsulating resin via an ultraviolet-irradiation-treated layer on the surface thereof. Device manufacturing method. 6. The method according to claim 5, wherein the curable / self-adhesive silicone composition is an addition reaction-curable / self-adhesive silicone composition.