JP2503696B2 - Projection exposure device - Google Patents
Projection exposure deviceInfo
- Publication number
- JP2503696B2 JP2503696B2 JP1319537A JP31953789A JP2503696B2 JP 2503696 B2 JP2503696 B2 JP 2503696B2 JP 1319537 A JP1319537 A JP 1319537A JP 31953789 A JP31953789 A JP 31953789A JP 2503696 B2 JP2503696 B2 JP 2503696B2
- Authority
- JP
- Japan
- Prior art keywords
- aperture
- projection exposure
- exposure apparatus
- value
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Projection-Type Copiers In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はLSI構造プロセスにおける光リソグラフィ工
程で使用される投影露光装置に関するものである。The present invention relates to a projection exposure apparatus used in an optical lithography process in an LSI structure process.
従来の投影露光装置を第３図を用いて説明する。 A conventional projection exposure apparatus will be described with reference to FIG.
第３図において、１は水銀ランプ、２はフライアイレ
ンズ、３はσ値可変用のアパーチャ、４は集光レンズ、
５はレチクル、６は投影レンズ、７はウェハである。In FIG. 3, 1 is a mercury lamp, 2 is a fly-eye lens, 3 is an aperture for varying the σ value, 4 is a condenser lens,
Reference numeral 5 is a reticle, 6 is a projection lens, and 7 is a wafer.
次に動作について説明する。第３図において、水銀ラ
ンプ１より発生した光はフライアイレンズ２を通過し、
σ値調整用のアパーチャ３を通過した後、集光レンズ４
によりレチクル５上へ集光され、レチクル５を通過した
後、投影レンズ６によりウェハ７上へ投影される。Next, the operation will be described. In FIG. 3, the light generated from the mercury lamp 1 passes through the fly-eye lens 2,
After passing through the σ value adjusting aperture 3, the condenser lens 4
The light is focused on the reticle 5 by the laser beam, passes through the reticle 5, and is then projected onto the wafer 7 by the projection lens 6.
ここで、光学系のσ値を調整するためのアパーチャを
第４図に示す。第４図において、8,9,10はそれぞれ、異
なるσ値の光学系を得るための開口アパーチャである。Here, an aperture for adjusting the σ value of the optical system is shown in FIG. In FIG. 4, 8, 9 and 10 are aperture apertures for obtaining optical systems having different σ values.
σ値を０に近づけるためには、アパーチャを小さく
し、σ値を１に近づけるにはアパーチャを大きくすると
よい。In order to bring the σ value close to 0, the aperture should be made small, and to bring the σ value close to 1, the aperture should be made large.
従来の投影露光装置は以上のように構成されているの
で、σ値を０に近づける場合、アパーチャの面積を小さ
くする必要があるので、開口半径を小さくしなければな
らない。しかし、この場合、ウェハ７上では光の強度む
らが生じ易いなどの問題があった。Since the conventional projection exposure apparatus is configured as described above, when making the σ value close to 0, it is necessary to reduce the area of the aperture, so the aperture radius must be reduced. However, in this case, there is a problem that light intensity unevenness is likely to occur on the wafer 7.
本発明はこのような点に鑑みてなされたものであり、
その目的とするところは、σ値が０に近い場合でも光の
強度むらが生じない投影露光装置を得ることにある。The present invention has been made in view of such a point,
The purpose thereof is to obtain a projection exposure apparatus in which unevenness of light intensity does not occur even when the σ value is close to 0.
このような目的を達成するために本発明は、光源面又
は光源面と等価な面の開口面積を、メッシュ状又はドッ
ト状の遮光部を導入して変化させることにより、光学系
の可干渉度を変化させる可干渉調節機構を設けるように
したものである。In order to achieve such an object, the present invention is to change the aperture area of the light source surface or a surface equivalent to the light source surface by introducing a mesh-shaped or dot-shaped light-shielding portion to change the coherence of the optical system. Is provided with a coherence adjusting mechanism for changing the.
本発明による投影露光装置においては、光強度むらが
無くなる。In the projection exposure apparatus according to the present invention, uneven light intensity is eliminated.
本発明による投影露光装置においては、開口部に設け
られたメッシュにより開口面積を減少させるので、開口
の半径を小さくしなくてもよく、光強度むらが無くな
る。In the projection exposure apparatus according to the present invention, since the opening area is reduced by the mesh provided in the opening, it is not necessary to reduce the radius of the opening, and the unevenness of light intensity is eliminated.
本発明による投影露光装置の一実施例を図を用いて説
明する。第１図は（ａ）〜（ｃ）はアパーチャの第１〜
第３の実施例を示す構成図であり、21は通常のアパーチ
ャ、22は粗いメッシュを伴ったアパーチャ、23は密なメ
ッシュを伴ったアパーチャである。An embodiment of the projection exposure apparatus according to the present invention will be described with reference to the drawings. FIG. 1 shows (a) to (c) of apertures 1 to 1.
It is a block diagram which shows a 3rd Example, 21 is a normal aperture, 22 is an aperture with a coarse mesh, 23 is an aperture with a dense mesh.
次に、本実施例の動作について説明する。本実施例の
投影露光装置においても従来と同様、第３図に示すよう
に、水銀ランプ１より発生した光はフライアイレンズ２
を通過し、σ値調整用のアパーチャ３を通過した後、集
光レンズ４によりレチクル５上へ集光され、レチクル５
を通過した後、投影レンズ６によりウェハ７上へ投影さ
れる。Next, the operation of this embodiment will be described. Also in the projection exposure apparatus of this embodiment, as in the conventional case, as shown in FIG.
After passing through the aperture 3 for adjusting the σ value, the light is focused on the reticle 5 by the condenser lens 4, and the reticle 5
After passing through, the image is projected onto the wafer 7 by the projection lens 6.
第１図（ａ）に示すアパーチャ構成の第１の実施例
は、アパーチャ３に複数の開口21,22,23を設け、開口22
と23には粗さの異なるメッシュを備えており、メッシュ
の粗さにより開口面積を調整し、σ値を変化させる。In the first embodiment of the aperture structure shown in FIG. 1 (a), the aperture 3 is provided with a plurality of openings 21, 22, 23, and
And 23 are provided with meshes having different roughness, and the opening area is adjusted by the roughness of the mesh to change the σ value.
第１図（ｂ）に示すアパーチャ構成の第２の実施例
は、１つの開口部21を設け、メッシュ24,25を取り替え
ること開口面積を調節し、σ値を変化させる。In the second embodiment of the aperture structure shown in FIG. 1 (b), one opening 21 is provided and the meshes 24 and 25 are replaced to adjust the opening area and change the σ value.
第１図（ｃ）に示すアパーチャ構成の第３の実施例
は、複数の開口部21,22,26を設け、開口22と26には線の
太さの違うメッシュを備えており、線の太さにより開口
面積を調節してσ値を変化させる。The third embodiment of the aperture structure shown in FIG. 1 (c) is provided with a plurality of openings 21, 22, 26, and the openings 22 and 26 are provided with meshes having different line thicknesses. The σ value is changed by adjusting the opening area according to the thickness.
次に、第２図を用いてフライアイレンズとアパーチャ
の働きについて述べる。第２図において、27は各フライ
アイレンズ、28はアパーチャの遮光部、29は１つのフラ
イアイレンズからの出射光の強度分布、30は入射光であ
る。Next, the functions of the fly-eye lens and the aperture will be described with reference to FIG. In FIG. 2, 27 is each fly-eye lens, 28 is a light-shielding portion of the aperture, 29 is an intensity distribution of light emitted from one fly-eye lens, and 30 is incident light.
第２図において、入射光30は１つ１つのフライアイレ
ンズに入射した後、出射される。出射光は一度焦点を結
んだのち拡散し、フライアイレンズからの出射光は互い
に重なり合うことにより平均化され、光源に起因する強
度むらを無くすことができる。このとき同時にσ値は大
きくなる。In FIG. 2, incident light 30 is emitted after entering each fly-eye lens. The emitted light is once focused and then diffused, and the emitted lights from the fly-eye lenses are averaged by overlapping each other, and it is possible to eliminate intensity unevenness caused by the light source. At this time, the σ value simultaneously increases.
σ値が小さい光学系が必要な場合、従来のように、開
口半径を小さくすると、チップの周辺部の強度が低下
し、強度むらが生じる。When an optical system having a small σ value is required, if the aperture radius is made small as in the conventional case, the strength of the peripheral portion of the chip is lowered and the strength becomes uneven.
そこで、本実施例のように、適切なメッシュ又はドッ
トによって開口面積を小さくすると、強度むらが無くσ
の値の小さい光学系が得られる。Therefore, if the opening area is reduced by an appropriate mesh or dot as in the present embodiment, there will be no intensity unevenness and σ
An optical system having a small value of can be obtained.
なお、上記実施例では、円形開口の場合について述べ
たが、矩形開口など他の形の開口であってもよい。ま
た、上記実施例では、メッシュを用いて面積の調節を行
なったが、ドットパターンであってもよい。In addition, in the above-mentioned embodiment, the case of the circular opening is described, but the opening may be another shape such as a rectangular opening. Further, in the above embodiment, the area is adjusted using the mesh, but a dot pattern may be used.
以上説明したように本発明は、開口半径を変化させず
に開口面積を変化させるようにしたことにより、σ値を
０に近づけてもウェハ上での光の強度分布にむらができ
ないという効果がある。As described above, according to the present invention, since the aperture area is changed without changing the aperture radius, the effect that the light intensity distribution on the wafer cannot be uneven even if the σ value is close to 0 is obtained. is there.
第１図（ａ）〜（ｃ）は本発明による投影露光装置を構
成するアパーチャの第１〜第３の実施例を示す構成図、
第２図は光の強度むらを説明するための光学系部分拡大
図、第３図は従来の投影露光装置を示す構成図、第４図
は従来の投影露光装置におけるアパーチャを示す構成図
である。 １……水銀ランプ、２……フライアイレンズ、３……コ
ヒーレンシー可変用アパーチャ、４……集光レンズ、５
……レチクル、６……投影レンズ、７……ウェハ、21,2
2,23……アパーチャ。FIGS. 1 (a) to 1 (c) are configuration diagrams showing first to third embodiments of an aperture constituting a projection exposure apparatus according to the present invention,
FIG. 2 is a partially enlarged view of an optical system for explaining unevenness of light intensity, FIG. 3 is a configuration diagram showing a conventional projection exposure apparatus, and FIG. 4 is a configuration diagram showing an aperture in the conventional projection exposure apparatus. . 1 ... Mercury lamp, 2 ... Fly-eye lens, 3 ... Aperture for changing coherency, 4 ... Focusing lens, 5
...... Reticle, 6 ... Projection lens, 7 ... Wafer, 21,2
2,23 ... Aperture.
Claims (1)
において、光源面又は光源面と等価な面の開口面積を、
メッシュ状又はドット状の遮光部を導入して変化させる
ことにより、光学系の可干渉度を変化させる可干渉度調
節機構を備えたことを特徴とする投影露光装置。1. A projection exposure apparatus for projecting a pattern onto an object, wherein an opening area of a light source surface or a surface equivalent to the light source surface is
A projection exposure apparatus comprising a coherence degree adjusting mechanism that changes a coherence degree of an optical system by introducing and changing a mesh-shaped or dot-shaped light-shielding portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1319537A JP2503696B2 (en) | 1989-12-08 | 1989-12-08 | Projection exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1319537A JP2503696B2 (en) | 1989-12-08 | 1989-12-08 | Projection exposure device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03180019A JPH03180019A (en) | 1991-08-06 |
| JP2503696B2 true JP2503696B2 (en) | 1996-06-05 |
Family
ID=18111353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1319537A Expired - Lifetime JP2503696B2 (en) | 1989-12-08 | 1989-12-08 | Projection exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2503696B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5190804B2 (en) * | 2008-07-16 | 2013-04-24 | 株式会社ニコン | Dimming unit, illumination optical system, exposure apparatus, and device manufacturing method |
| JP5187636B2 (en) * | 2009-01-16 | 2013-04-24 | 株式会社ニコン | Correction unit, illumination optical system, exposure apparatus, and device manufacturing method |
| JP2011091177A (en) * | 2009-10-22 | 2011-05-06 | V Technology Co Ltd | Laser exposure device |
| CN111752108A (en) * | 2019-03-28 | 2020-10-09 | 上海微电子装备（集团）股份有限公司 | LED lighting device and exposure machine |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56119646U (en) * | 1980-02-15 | 1981-09-11 | ||
| JPS58144831U (en) * | 1982-03-26 | 1983-09-29 | 株式会社日立製作所 | Projection type exposure equipment |
| JPS61151A (en) * | 1984-06-13 | 1986-01-06 | マルイ化工株式会社 | Square-shaped cask type wine vessel |
| JP2659208B2 (en) * | 1988-05-13 | 1997-09-30 | 日本電気株式会社 | Integrated circuit pattern exposure method |
-
1989
- 1989-12-08 JP JP1319537A patent/JP2503696B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03180019A (en) | 1991-08-06 |
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