JP2024038720A - light detection device - Google Patents

Abstract

To suppress communication of a seam portion to an outside.SOLUTION: A light detection device includes: a substrate that includes a light detection element; chips that are provided with respect to the substrate; a buried layer that is provided so as to cover the chips; a seam portion that occurs in the buried layer and extends to a surface of the buried layer; and a sealing layer that is provided so as to cover the buried layer and the seam portion.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to a photodetection device.

It is known that a seam occurs in a layer provided to cover a substrate due to a step on the substrate. For example, Patent Document 1 discloses a technique for suppressing communication of the seam portions to the outside by making the seam portions of two stacked layers discontinuous.

International Publication No. 2017/183390

2. Description of the Related Art There is a photodetection device having a structure in which a layer is provided so as to cover a chip provided on a substrate including a photodetection element. Seams may occur due to the step provided by the chip. There is still room to consider ways to suppress communication of the seam portion to the outside.

One aspect of the present disclosure suppresses communication of the seam portion to the outside.

A photodetection device according to one aspect of the present disclosure includes a substrate including a photodetection element, a chip provided to the substrate, an embedded layer provided to cover the chip, and a photodetector generated within the embedded layer. It includes a seam portion extending to the surface of the layer, and a sealing layer provided to cover the buried layer and the seam portion.

FIG. 1 is a diagram illustrating an example of a schematic configuration of a photodetection device according to a first embodiment. FIG. 3 is a diagram illustrating an example of a schematic configuration of a photodetection device according to a second embodiment. It is a figure showing an example of a schematic structure of a photodetection device concerning a 4th embodiment. It is a figure showing an example of a schematic structure of a photodetection device concerning a 5th embodiment. It is a figure showing an example of a schematic structure of a photodetection device concerning a 6th embodiment. It is a figure showing an example of a schematic structure of a photodetection device concerning a 6th embodiment. It is a figure showing an example of a schematic structure of a photodetection device concerning a 7th embodiment. It is a figure showing an example of a schematic structure of a photodetection device concerning an 8th embodiment. It is a figure which shows the example of the manufacturing method of a photodetection device. It is a figure which shows the example of the manufacturing method of a photodetection device. It is a figure which shows the example of the manufacturing method of a photodetection device. It is a figure which shows the example of the manufacturing method of a photodetection device. It is a figure which shows the example of the manufacturing method of a photodetection device. It is a figure which shows the example of the manufacturing method of a photodetection device. It is a figure which shows the example of the manufacturing method of a photodetection device. It is a figure which shows the example of the manufacturing method of a photodetection device. It is a figure which shows the example of the manufacturing method of a photodetection device. It is a figure which shows the example of the manufacturing method of a photodetection device. It is a figure which shows the example of the manufacturing method of a photodetection device. FIG. 2 is a diagram illustrating an example of a schematic configuration of a photodetection device according to an application example. FIG. 2 is a diagram illustrating an example of a schematic configuration of a photodetection device according to an application example. FIG. 2 is a diagram illustrating an example of a schematic configuration of a photodetection device according to an application example. FIG. 2 is a diagram illustrating an example of a schematic configuration of a photodetection device according to an application example. FIG. 1 is a block diagram showing an example of a schematic configuration of a vehicle control system. FIG. 2 is an explanatory diagram showing an example of installation positions of an outside-vehicle information detection section and an imaging section.

Embodiments of the present disclosure will be described in detail below based on the drawings. In addition, in each of the following embodiments, the same elements are given the same reference numerals to omit redundant explanation.

The present disclosure will be described according to the order of items shown below.
1. First embodiment 2. Second embodiment 3. Third embodiment 4. Fourth embodiment 5. Fifth embodiment 6. Sixth embodiment 7. Seventh embodiment 8. Eighth embodiment 9. Example of manufacturing method 10. Application example to imaging device 11. Example of effect 12. Example of application to mobile objects

1. First Embodiment FIG. 1 is a diagram showing an example of a schematic configuration of a photodetection device according to a first embodiment. A cross section of a photodetector 100 is schematically shown. The photodetecting device 100 includes a substrate 1 , a chip 2 , a buried layer 3 , a seam portion 4 , a sealing layer 5 , an auxiliary layer 6 , and a support substrate 7 . Note that, within the scope of consistency, "layer" may be read as "film", "member", etc. as appropriate. Further, "provide" may be read as "form" or the like as appropriate.

In the figure, an XYZ coordinate system is also illustrated. The Z-axis direction corresponds to the thickness direction of the substrate or layer. The X-axis direction and the Y-axis direction (XY plane direction) correspond to the plane direction of the substrate or layer. The substrate 1 and the support substrate 7 are opposed to each other. In this example, of the substrate 1 and the support substrate 7, the substrate 1 is located on the negative side of the Z-axis, and the support substrate 7 is located on the positive side of the Z-axis. The chip 2 , the buried layer 3 , the seam 4 , the sealing layer 5 and the auxiliary layer 6 are located between the substrate 1 and the support substrate 7 .

Photodetection device 100 includes a wiring layer. All wiring provided in the wiring layer is referred to as wiring L and illustrated. An example of the material of the wiring L is copper (Cu) or the like. Note that some vias connecting the wirings L in different wiring layers are also shown with the same hatching as the wirings L.

The substrate 1 is a semiconductor substrate such as a silicon (Si) semiconductor substrate, and includes a photodetector element 1p. An example of the photodetection element is a photoelectric conversion element such as a PD (Photo Diode). For example, a plurality of photoelectric conversion elements arranged in an array in the XY plane direction may correspond to the photodetection element 1p. Although not shown, the substrate 1 also includes circuit elements such as transistors for driving each photoelectric conversion element and extracting an electric signal according to the amount of light received by each photoelectric conversion element. A circuit including such a circuit element is also referred to as a pixel circuit.

Among the surfaces of the substrate 1, the surface on the Z-axis positive direction side is referred to as a surface 1a and illustrated. The surface on the negative side of the Z-axis is referred to as a back surface 1b and illustrated. The illustrated photodetector 100 is a backside illumination type photodetector that detects light incident on the backside 1b of the substrate 1.

The substrate 1 has a wiring layer on the front surface 1a side. The wiring L in the wiring layer of the substrate 1 may constitute a part of a pixel circuit. The wiring layer of the illustrated substrate 1 is a multilayer wiring layer, and some wirings L are exposed on the surface 1a.

Chip 2 is provided to substrate 1 . Being provided on the substrate 1 may be understood to include not only being provided directly on the substrate 1, but also being provided via another element (for example, an additional substrate 12 in FIG. 21, which will be described later). In the example shown in FIG. 1, the chip 2 is provided directly on the substrate 1, more specifically on the surface 1a of the substrate 1. The mounting surface of the chip 2 is shown as a mounting surface 2b. The chip 2 has a wiring layer on the mounting surface 2b side. The wiring layer of the illustrated chip 2 is a multilayer wiring layer, and some wirings L are exposed on the mounting surface 2b.

The chip 2 is provided on the substrate 1 such that the mounting surface 2b of the chip 2 is in contact with the surface 1a of the substrate 1. More specifically, the chip 2 is mounted on the substrate 1 such that the wiring L of the chip 2 and the wiring L of the substrate 1 are in contact with each other and electrically connected. Such a connection is also called a Cu--Cu bond or the like when the material of the wiring L is Cu. The mounting surface 2b of the chip 2 and the surface 1a of the substrate 1 define a bonding surface between the chip 2 and the substrate 1 (chip bonding surface).

The chip 2 may be any chip (such as an IC) that can be used in the photodetector 100. An example of the chip 2 is a logic chip, which drives, for example, a transistor of a pixel circuit or processes an electric signal taken out from the pixel circuit. Another example of the chip 2 is a memory chip, which stores, for example, data used in processing by a logic chip or data obtained by processing. Yet another example of chip 2 is an AI (Artificial Intelligence) chip, which is specifically designed to perform high-speed arithmetic processing using a trained model (for example, a trained DNN (Deep Neural Network)). .

As understood from FIG. 1, the chip 2 provided on the substrate 1 provides a step. In this example, the chip 2 is a stepped portion having a convex shape protruding toward the positive direction of the Z-axis with respect to the surface 1a of the substrate 1 as a reference. Note that the number of chips 2 included in the photodetector 100 is not limited to the example shown in FIG. 1. The photodetection device 100 may include any number of chips 2, one or more.

The buried layer 3 is provided so as to cover the chip 2, and more specifically, to cover the substrate 1 and the chip 2 in this example. The buried layer 3 can function as a protective layer that protects the chip 2. For example, entry of moisture, chemicals, undesired gases, etc. into the chip 2 is suppressed. Examples of the material of the buried layer 3 are SiN, SiO2 _{, etc.} Among the surfaces of the buried layer 3, the surface on the Z-axis positive direction side is referred to as a surface 3a and illustrated. The surface on the negative side of the Z-axis is referred to as a back surface 3b in the drawing.

Seam portion 4 occurs within buried layer 3 due to the step provided by chip 2 . The seam portion 4 starts from, for example, the rising portion of the step or its surrounding portion, and extends to the surface 3a of the buried layer 3.

At least a portion of the seam portion 4 may be a void. The void that the seam portion 4 has is shown as a void 4a. In the example shown in FIG. 1, the entire seam portion 4 is a void 4a. A portion of the surface 3a of the buried layer 3 where the seam portion 4 is located is open.

The sealing layer 5 is provided so as to cover the embedded layer 3 and the seam portion 4 . The opening formed in the surface 3a of the buried layer 3 by the seam portion 4 is also closed by the sealing layer 5. The sealing layer 5 prevents the seam portion 4 from communicating with the outside. The material of the sealing layer 5 may be the same as the material of the buried layer 3, or may be different. Some examples of materials for the sealing layer 5 will be described later.

Auxiliary layer 6 is provided to cover sealing layer 5 . The auxiliary layer 6 includes, for example, a material suitable for bonding to the support substrate 7. Examples of materials for the auxiliary layer 6 are mainly SiOx (SiNx, SiON, SiCN, SiOC). Among the surfaces of the auxiliary layer 6, the surface on the Z-axis positive direction side is referred to as a surface 6a and illustrated.

The support substrate 7 is located on the opposite side of the substrate 1 with the sealing layer 5 in between, and supports the sealing layer 5 directly or indirectly. The support substrate 7 may be, for example, a silicon (Si) semiconductor substrate. In the example shown in FIG. It is bonded to the auxiliary layer 6 so as to indirectly support 5). Among the surfaces of the support substrate 7, the surface on the Z-axis positive direction side is referred to as a surface 7a and illustrated. The surface on the negative side of the Z-axis is referred to as a back surface 7b. The back surface 7b of the support substrate 7 and the front surface 6a of the auxiliary layer 6 define a bonding surface between the support substrate 7 and the auxiliary layer 6 (support substrate bonding surface). Note that the photodetecting device 100 may not include the auxiliary layer 6, and in that case, the support substrate 7 is bonded to the sealing layer 5 so as to directly support the sealing layer 5.

According to the photodetecting device 100 described above, by providing the sealing layer 5 that covers the embedded layer 3 and the seam portion 4, communication of the seam portion 4 to the outside can be suppressed. Specifically, in the example shown in FIG. 1, it is possible to prevent the seam portion 4 from reaching the surface 6a of the auxiliary layer 6, which is the bonding surface with the support substrate 7. If the seam portion 4 reaches the surface 6a of the auxiliary layer 6, an opening will be formed at the bonding surface with the support substrate 7, and there is a possibility that the bonding quality will be degraded due to the generation of voids or the like. Such deterioration in bonding quality is suppressed by the photodetecting device 100.

Several other embodiments based on the above techniques will be described. The technical features of each embodiment may be combined as appropriate to the extent that there is no contradiction.

2. Second Embodiment FIG. 2 is a diagram showing an example of a schematic configuration of a photodetection device according to a second embodiment. The sealing layer 5 includes an extension portion 5 a that extends into the seam portion 4 . The extending portion 5a extends so as to fill at least a portion of the seam portion 4, and in the example shown in FIG. 2, extends so as to fill the entire seam portion 4. The seam portion 4 does not have a void 4a (FIG. 1). The material of the sealing layer 5 (the material of the extension portion 5a) includes a low permeability material. Examples of low permeability materials include SiN-based materials. Examples of SiN-based materials are SiNx, SiCN, SiON, etc. By filling the seam portion 4 with the extending portion 5a of the sealing layer 5, the effect of suppressing moisture from entering the chip 2, for example, can be enhanced. This also leads to improved reliability.

3. Third Embodiment In one embodiment, the material of the sealing layer 5 includes a low Young's modulus material. Examples of low Young's modulus materials are low-k materials, organic materials, etc. An example of a low-k material is porous SiO2. Examples of organic materials are silicones, siloxanes, polyimides, etc. By filling the seam portion 4 with the extending portion 5a of the sealing layer 5, for example, inter-chip stress can be alleviated.

4. Fourth Embodiment FIG. 3 is a diagram showing an example of a schematic configuration of a photodetection device according to a fourth embodiment. The extending portion 5a of the sealing layer 5 extends so as to fill only a portion of the seam portion 4. The remainder of the seam portion 4 is a void 4a. By leaving the void 4a, inter-chip stress can also be alleviated.

Note that, hereinafter, unless otherwise specified, a case will be described in which the extending portion 5a of the sealing layer 5 extends so as to fill the entire seam portion 4.

5. Fifth Embodiment FIG. 4 is a diagram showing an example of a schematic configuration of a photodetection device according to a fifth embodiment. Photodetection device 100 further includes a side wall portion 8 . The side wall portion 8 is provided so as to cover the side surface (side wall) of the chip 2 . The buried layer 3 is provided so as to cover the substrate 1 , the chip 2 , and the sidewall portion 8 . An example of the material of the side wall portion 8 is an inorganic material. Examples of inorganic materials are mainly SiNx (SiOx, SiON, SiCN, SiOC). By providing the side wall portion 8, the protection performance of the chip 2 can be further improved.

6. Sixth Embodiment FIGS. 5 and 6 are diagrams showing an example of a schematic configuration of a photodetecting device according to a sixth embodiment. Seam portions 4 caused by two different chips 2 are connected to each other. Among the two chips 2, the first chip is shown as a chip 2-1. The second chip is designated and illustrated as chip 2-2.

The seam portion 4 includes a seam portion 4-1 and a seam portion 4-2. The seam portion 4-1 is a first seam portion caused by the chip 2-1. The seam portion 4-2 is a second seam portion caused by the chip 2-2. In the example shown in FIG. 5, the seam portion 4-1 and the seam portion 4-2 are connected to each other on the way to the surface 3a of the buried layer 3, and extend to the surface 3a of the buried layer 3. In the example shown in FIG. 6, the step provided by the seam portion 4-1 and the seam portion 4-2 are connected to each other from the beginning and extend together to the surface 3a of the buried layer 3. For example, even if there are a seam portion 4-1 and a seam portion 4-2 that are connected to each other in this manner, communication between them to the outside can be suppressed.

7. Seventh Embodiment FIG. 7 is a diagram showing an example of a schematic configuration of a photodetection device according to a seventh embodiment. Photodetection device 100 further includes an additional layer 9 . An additional layer 9 is provided between the substrate 1 and the chip 2 and the buried layer 3. In other words, the additional layer 9 is provided so as to cover the substrate 1 and the chip 2 , and the buried layer 3 is provided so as to cover the additional layer 9 . The material of the additional layer 9 may be the same as the material of the buried layer 3 or may be different. Examples of materials for the additional layer 9 are mainly SiNx (SiOx, SiON, SiCN, SiOC). The additional layer 9 may have a single layer structure or a laminated structure. By providing the additional layer 9, reliability can be further improved.

8. Eighth Embodiment FIG. 8 is a diagram showing an example of a schematic configuration of a photodetection device according to an eighth embodiment. The auxiliary layer 6 has a laminated structure. In this example, the auxiliary layer 6 has a three-layer structure and includes a layer 61, a layer 62, and a layer 63 in this order in the positive Z-axis direction. The layers 61, 62, and 63 may be made of different materials or the same material. Depending on the number of layers and material design, it is possible to adjust warpage and expand bonding margins.

9. Example of Manufacturing Method FIGS. 9 to 19 are diagrams illustrating an example of a method of manufacturing a photodetector. FIGS. 9 to 14 show the photodetecting devices 100 (FIGS. 1 to 3, and FIGS. 5 to 3) according to the first to fourth embodiments and the sixth to eighth embodiments described above. An example of the manufacturing method of 8) is shown below.

As shown in FIG. 9, a substrate 1 including a photodetecting element 1p is prepared, and a chip 2 is provided on the substrate 1. As shown in FIG. 10, a buried layer 3 is provided to cover the substrate 1 and the chip 2. A seam portion 4 is generated within the buried layer 3 due to the step provided by the chip 2 . At this point, the entire seam portion 4 is a void 4a.

As in the aforementioned sixth embodiment (FIGS. 5 and 6), the seam portions 4 corresponding to adjacent chips 2 may be connected to each other. In the case of the seventh embodiment (FIG. 7) described above, after the additional layer 9 (FIG. 7) is provided so as to cover the substrate 1 and the chip 2, the buried layer 3 is provided so as to cover the additional layer 9.

By polishing and cleaning the upper part of the buried layer 3 (the portion on the positive side of the Z-axis), a flattened surface 3a is obtained as shown in FIG. The portion of the surface 3a where the seam portion 4 reaches is open. In this state, as shown in FIG. 12, a sealing layer 5 is provided to cover the buried layer 3. The opening in the surface 3a is closed by the sealing layer 5.

In the case of the first embodiment (FIG. 1) described above, the entire seam portion 4 remains as the void 4a. In the case of the second and third embodiments (FIG. 2) described above, the entire seam portion 4 is filled with the material of the sealing layer 5, and that portion becomes the extension portion 5a of the sealing layer 5. In the case of the fourth embodiment described above (FIG. 3), only a portion of the seam portion 4 is filled with the material of the sealing layer 5, and that portion becomes the extension portion 5a of the sealing layer 5. In the case of the sixth to eighth embodiments (FIGS. 5 to 8) described above, any aspect may be used.

As shown in FIG. 13, an auxiliary layer 6 is provided to cover the sealing layer 5. Thereafter, the auxiliary layer 6 is polished and cleaned. Since the seam portion 4 is covered with the sealing layer 5, the seam portion 4 does not widen even after cleaning. In the case of the eighth embodiment (FIG. 8) described above, a plurality of layers (eg, layer 61, layer 62, and layer 63) are provided so that the auxiliary layer 6 has a laminated structure. As shown in FIG. 14, the support substrate 7 is bonded to the auxiliary layer 6.

For example, as described above, the photodetecting device 100 according to the first to fourth embodiments and the sixth to eighth embodiments described above can be manufactured.

15 to 19 show an example of the manufacturing method of the fifth embodiment (FIG. 4) described above. The steps up to preparing the substrate 1 and providing the chip 2 on the substrate 1 are the same as those in FIG. 9 described above. As shown in FIG. 15, the material of the side wall portion 8 (FIG. 4) is provided so as to cover the substrate 1 and chip 2.

As shown in FIG. 16, etching (for example, dry etching) is performed so that the above-mentioned material remains on the side surface of the chip 2. The material remaining on the side surface of the chip 2 becomes the side wall portion 8. As shown in FIG. 17, a buried layer 3 is provided to cover the substrate 1, the chip 2, and the side wall portion 8. A seam portion 4 is generated within the buried layer 3 due to the step provided by the chip 2 . As shown in FIG. 18, an auxiliary layer 6 is provided to cover the sealing layer 5. As shown in FIG. 19, the support substrate 7 is bonded to the auxiliary layer 6.

For example, the photodetection device 100 according to the fifth embodiment described above can be manufactured as described above.

10. Application Example to Imaging Device An example of application of the photodetection device 100 described so far is an imaging device. This will be explained with reference to FIGS. 20 to 23.

FIG. 20 is a diagram illustrating an example of a schematic configuration of a photodetecting device according to an application example. Please note that the direction of the Z axis is reversed from the previous figures. The illustrated photodetection device 100 is an imaging device configured to include a plurality of pixels 101. Examples of the pixel 101 include a pixel G that receives green light, a pixel R that receives red light, and a pixel B that receives blue light. The substrate 1 is a substrate (image sensor substrate) configured to include a photoelectric conversion element corresponding to each pixel 101. Photodetection device 100 includes a filter layer 10 and a lens layer 11.

The filter layer 10 is provided on the opposite side of the chip 2 and the buried layer 3 with the substrate 1 in between. In this example, the filter layer 10 is provided on the back surface 1b of the substrate 1. Filter layer 10 includes multiple filters corresponding to multiple pixels 101. A filter provided in pixel G is referred to as a filter 10G and illustrated. The filter provided in pixel R is referred to as a filter 10R and illustrated. The filter provided in pixel B is referred to as filter 10B and illustrated. Filter 10G passes green light. The filter 10R allows red light to pass through. Filter 10B allows blue light to pass through. Various known materials such as resins may be used.

Lens layer 11 is provided on the opposite side of substrate 1 with filter layer 10 in between. The lens layer 11 includes a plurality of lenses 11a corresponding to the plurality of pixels 101. The lens 11a is a condenser lens that condenses light that is incident on the photoelectric conversion element of the substrate 1 via the filter layer 10. Various known materials may be used, such as resin.

For example, the photodetection device 100 having the above configuration can be used as an imaging device. Other configurations are possible, and some examples are described with reference to FIGS. 21-23.

FIG. 21 is a diagram illustrating an example of a schematic configuration of a photodetecting device according to an application example. Photodetection device 100 further includes an additional substrate 12 . Additional substrate 12 is provided between substrate 1 and buried layer 3 . The additional substrate 12 can also be said to be an intermediate substrate located between the substrate 1 and the support substrate 7. Among the surfaces of the additional substrate 12, the surface on the Z-axis positive direction side is referred to as a surface 12a and illustrated. The surface on the negative side of the Z-axis is referred to as a back surface 12b. The front surface 12a of the additional substrate 12 is in contact with the back surface 3b of the buried layer 3, and the back surface 12b of the additional substrate 12 is in contact with the front surface 1a of the substrate 1.

The additional board 12 has wiring layers on each of the front surface 12a side and the back surface 12b side. The illustrated wiring layer of the additional board 12 is a multilayer wiring layer, and some wiring L is exposed on the front surface 12a or the back surface 12b.

The chip 2 is provided on the additional substrate 12 such that the mounting surface 2b of the chip 2 is in contact with the surface 12a of the additional substrate 12. More specifically, the chip 2 is mounted on the additional substrate 12 such that the wiring L of the chip 2 and the wiring L of the additional substrate 12 are in contact and electrically connected. The mounting surface 2b of the chip 2 and the surface 12a of the additional substrate 12 define a bonding surface (chip bonding surface) between the chip 2 and the additional substrate 12.

The additional board 12 is bonded to the board 1 so that the wiring L of the additional board 12 and the wiring L of the board 1 are electrically contacted and connected. The front surface 1a of the substrate 1 and the back surface 12b of the additional substrate 12 define a bonding surface (F2F bonding surface) between the substrate 1 and the additional substrate 12.

Additional substrate 12 includes through vias 12v. The through via 12v penetrates the portion (substrate) between the wiring layer on the front surface 12a side of the additional board 12 and the wiring layer on the back surface 12b side of the additional board 12 so as to connect them. By also utilizing the wiring layer of the additional substrate 12, more wiring and circuit elements can be formed. For example, the functionality of the photodetection device 100 can be further improved. Note that two or more additional substrates 12 may be provided.

22 and 23 are diagrams illustrating an example of a schematic configuration of a photodetecting device according to an application example. As shown in FIG. 22, wiring L and structures are also provided between chips 2 that are arranged adjacent to each other with an interval. A through via V is exemplified as the structure.

Specifically, as shown in FIG. 22, the buried layer 3 and the auxiliary layer 6 also include the wiring L. Some wiring lines L are provided between adjacent chips 2. By providing the wiring L in the buried layer 3 and the auxiliary layer 6 as well, it is possible to further improve the functionality of the photodetecting device 100. The wiring L may be provided in the seam portion 4, and the degree of freedom in layout is improved accordingly.

The through via V passes through the buried layer 3 , the sealing layer 5 , the auxiliary layer 6 , and the support substrate 7 . Through the through-vias V, electrical access is made possible from the surface 7a of the support substrate 7 to the wiring layer on the surface 12a side of the additional substrate 12. The through via V can also be called a contact via. In the buried layer 3, at least some of the through vias V are located between adjacent chips 2. Further, the through via V may pass through the seam portion 4. Specifically, FIG. 23 schematically shows a planar layout. When viewed in plan (when viewed in the Z-axis direction), some of the through-vias V out of the plurality of through-vias V arranged around the chip 2 overlap with the seam portion 4 . Through vias V can be provided at various positions, and the degree of freedom in layout is improved accordingly.

11. Examples of effects The techniques described above are specified as follows, for example. One of the techniques disclosed is a photodetection device 100. As described with reference to FIG. 1 etc., the photodetecting device 100 includes a substrate 1 including a photodetecting element 1p, a chip 2 provided on the substrate 1, and an embedded portion provided to cover the chip 2. A layer 3, a seam portion 4 generated within the buried layer 3 and extending to the surface 3a of the buried layer 3, and a sealing layer 5 provided so as to cover the buried layer 3 and the seam portion 4. Be prepared.

According to the photodetecting device 100 described above, by providing the sealing layer 5 that covers the embedded layer 3 and the seam portion 4, communication of the seam portion 4 to the outside can be suppressed.

As described with reference to FIG. 1 and the like, the photodetecting device 100 includes a support substrate that is located on the opposite side of the substrate 1 with the sealing layer 5 in between and supports the sealing layer 5 directly or indirectly. 7 may be provided. Since the seam portion 4 covered with the sealing layer 5 does not reach the bonding surface with the support substrate 7, deterioration in bonding quality due to void generation etc. can be suppressed.

As described with reference to Figures 1 and 3, at least a portion of the seam portion 4 may be a gap 4a. This can, for example, relieve stress between chips.

As described with reference to FIGS. 2, 3, etc., the sealing layer 5 may include the extending portion 5a that extends into the seam portion 4 so as to fill at least a portion of the seam portion 4. The material of the sealing layer 5 may include a low permeability material. Thereby, for example, the effect of suppressing moisture and the like from entering the chip 2 can be enhanced. The material of the sealing layer 5 may include a low Young's modulus material. Thereby, for example, inter-chip stress can be alleviated.

As described with reference to FIG. 4 and the like, the photodetecting device 100 may include the side wall portion 8 provided so as to cover the side surface of the chip 2. Thereby, the protection performance of the chip 2 can be further improved.

As described with reference to FIGS. 5 and 6, the chip 2 includes a chip 2-1 (first chip) and a chip 2-2 (second chip) that are spaced apart from each other, The seam portion 4 includes a seam portion 4-1 (first seam portion) caused by the chip 2-1 and a seam portion 4-2 (second seam portion) caused by the chip 2-2. The seam portion 4-1 and the seam portion 4-2 may be connected to each other. For example, even if there are a seam portion 4-1 and a seam portion 4-2 that are connected to each other in this manner, communication between them to the outside can be suppressed.

As described with reference to FIG. 7 and the like, the photodetector 100 may include the additional layer 9 provided between the chip 2 and the buried layer 3. Thereby, reliability can be further improved.

As described with reference to FIGS. 1, 8, etc., the photodetector 100 may include the auxiliary layer 6 provided so as to cover the sealing layer 5. This makes it easier to bond to the support substrate 7, for example. The auxiliary layer 6 may have a laminated structure. Depending on the number of layers and material design, it is possible to adjust warpage and expand bonding margins.

As described with reference to FIG. 1 and the like, the chip 2 may include at least one of a logic chip, a memory chip, and an AI (Artificial Intelligence) chip. For example, it is possible to provide a highly functional photodetection device provided with such various chips 2.

As described with reference to FIG. 20 and the like, the photodetection device 100 may be an imaging device configured to include a plurality of pixels 101. The photodetecting device 100 includes a filter layer 10 provided on the opposite side of the chip 2 and the embedded layer 3 with the substrate 1 in between, a lens layer 11 provided on the opposite side of the substrate with the filter layer 10 in between, may be provided. The photodetection device 100 can be applied to an imaging device.

As described with reference to FIG. 21 and the like, the photodetecting device 100 may include the additional substrate 12 provided between the substrate 1 and the buried layer 3. Thereby, for example, the photodetection device 100 can be made highly functional.

As described with reference to FIG. 22 and the like, the chip 2 includes two chips 2 arranged adjacent to each other with an interval, and the buried layer 3 is provided between the two chips 2. The wiring L may be included. It becomes possible to further improve the functionality of the photodetecting device 100. The photodetecting device 100 may include a through via V that penetrates the buried layer 3 , the sealing layer 5 , and the support substrate 7 . For example, it becomes possible to access the wiring layer on the surface 12a side of the additional substrate 12 from the surface 7a of the support substrate 7.

Note that the effects described in the present disclosure are merely examples, and are not limited to the disclosed contents. There may also be other effects.

12. Examples of applications to mobile objects The technology described so far can be applied to a variety of products. For example, the photodetection device 100 described so far is a device mounted on any type of moving object such as a car, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility vehicle, an airplane, a drone, a ship, a robot, etc. It may also be realized as

FIG. 24 is a block diagram illustrating a schematic configuration example of a vehicle control system, which is an example of a mobile body control system to which the technology according to the present disclosure can be applied.

Vehicle control system 12000 includes a plurality of electronic control units connected via communication network 12001. In the example shown in FIG. 24, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside vehicle information detection unit 12030, an inside vehicle information detection unit 12040, and an integrated control unit 12050. Further, as the functional configuration of the integrated control unit 12050, a microcomputer 12051, an audio/image output section 12052, and an in-vehicle network I/F (Interface) 12053 are illustrated.

The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 includes a drive force generation device such as an internal combustion engine or a drive motor that generates drive force for the vehicle, a drive force transmission mechanism that transmits the drive force to wheels, and a drive force transmission mechanism that controls the steering angle of the vehicle. It functions as a control device for a steering mechanism to adjust and a braking device to generate braking force for the vehicle.

The body system control unit 12020 controls the operations of various devices installed in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as a headlamp, a back lamp, a brake lamp, a turn signal, or a fog lamp. In this case, radio waves transmitted from a portable device that replaces a key or signals from various switches may be input to the body control unit 12020. The body system control unit 12020 receives input of these radio waves or signals, and controls the door lock device, power window device, lamp, etc. of the vehicle.

External information detection unit 12030 detects information external to the vehicle in which vehicle control system 12000 is mounted. For example, an imaging section 12031 is connected to the outside-vehicle information detection unit 12030. The vehicle exterior information detection unit 12030 causes the imaging unit 12031 to capture an image of the exterior of the vehicle, and receives the captured image. The external information detection unit 12030 may perform object detection processing such as a person, car, obstacle, sign, or text on the road surface or distance detection processing based on the received image.

The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of received light. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. Further, the light received by the imaging unit 12031 may be visible light or non-visible light such as infrared rays.

The in-vehicle information detection unit 12040 detects in-vehicle information. For example, a driver condition detection section 12041 that detects the condition of the driver is connected to the in-vehicle information detection unit 12040. The driver condition detection unit 12041 includes, for example, a camera that images the driver, and the in-vehicle information detection unit 12040 detects the degree of fatigue or concentration of the driver based on the detection information input from the driver condition detection unit 12041. It may be calculated, or it may be determined whether the driver is falling asleep.

The microcomputer 12051 calculates control target values for the driving force generation device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, Control commands can be output to 12010. For example, the microcomputer 12051 realizes ADAS (Advanced Driver Assistance System) functions, including vehicle collision avoidance or impact mitigation, following distance based on vehicle distance, vehicle speed maintenance, vehicle collision warning, vehicle lane departure warning, etc. It is possible to perform cooperative control for the purpose of

In addition, the microcomputer 12051 controls the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040. It is possible to perform cooperative control for the purpose of autonomous driving, etc., which does not rely on operation.

Further, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 controls the headlamps according to the position of the preceding vehicle or oncoming vehicle detected by the vehicle exterior information detection unit 12030, and performs cooperative control for the purpose of preventing glare, such as switching from high beam to low beam. It can be carried out.

The audio image output unit 12052 transmits an output signal of at least one of audio and image to an output device that can visually or audibly notify information to a passenger of the vehicle or to the outside of the vehicle. In the example of FIG. 24, an audio speaker 12061, a display section 12062, and an instrument panel 12063 are illustrated as output devices. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

FIG. 25 is a diagram showing an example of the installation position of the imaging section 12031.

In FIG. 25, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

The imaging units 12101, 12102, 12103, 12104, and 12105 are provided at, for example, the front nose of the vehicle 12100, the side mirrors, the rear bumper, the back door, and the upper part of the windshield inside the vehicle. An imaging unit 12101 provided in the front nose and an imaging unit 12105 provided above the windshield inside the vehicle mainly acquire images in front of the vehicle 12100. Imaging units 12102 and 12103 provided in the side mirrors mainly capture images of the sides of the vehicle 12100. An imaging unit 12104 provided in the rear bumper or back door mainly captures images of the rear of the vehicle 12100. The imaging unit 12105 provided above the windshield inside the vehicle is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, and the like.

Note that FIG. 25 shows an example of the imaging range of the imaging units 12101 to 12104. An imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and an imaging range 12114 shows the imaging range of the imaging unit 12101 provided on the front nose. The imaging range of the imaging unit 12104 provided in the rear bumper or back door is shown. For example, by overlapping the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera including a plurality of image sensors, or may be an image sensor having pixels for phase difference detection.

For example, the microcomputer 12051 determines the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the temporal change in this distance (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. By determining the following, it is possible to extract, in particular, the closest three-dimensional object on the path of vehicle 12100, which is traveling at a predetermined speed (for example, 0 km/h or more) in approximately the same direction as vehicle 12100, as the preceding vehicle. can. Furthermore, the microcomputer 12051 can set an inter-vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. In this way, it is possible to perform cooperative control for the purpose of autonomous driving, etc., in which the vehicle travels autonomously without depending on the driver's operation.

For example, the microcomputer 12051 transfers three-dimensional object data to other three-dimensional objects such as two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, and utility poles based on the distance information obtained from the imaging units 12101 to 12104. It can be classified and extracted and used for automatic obstacle avoidance. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines a collision risk indicating the degree of risk of collision with each obstacle, and when the collision risk exceeds a set value and there is a possibility of a collision, the microcomputer 12051 transmits information via the audio speaker 12061 and the display unit 12062. By outputting a warning to the driver and performing forced deceleration and avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be provided.

At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether the pedestrian is present in the images captured by the imaging units 12101 to 12104. Such pedestrian recognition involves, for example, a procedure for extracting feature points in images captured by the imaging units 12101 to 12104 as infrared cameras, and a pattern matching process is performed on a series of feature points indicating the outline of an object to determine whether it is a pedestrian or not. This is done by a procedure that determines the When the microcomputer 12051 determines that a pedestrian is present in the images captured by the imaging units 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 creates a rectangular outline for emphasis on the recognized pedestrian. The display unit 12062 is controlled to display the . Furthermore, the audio image output unit 12052 may control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.

The photodetection device 100 described above can be applied to, for example, the imaging unit 12031 among the configurations described above. For example, the reliability of products including the photodetector 100 can be further improved.

Although the embodiments of the present disclosure have been described above, the technical scope of the present disclosure is not limited to the above-described embodiments as they are, and various changes can be made without departing from the gist of the present disclosure. Furthermore, components of different embodiments and modifications may be combined as appropriate.

Note that the present technology can also have the following configuration.
(1)
a substrate including a photodetector;
a chip provided on the substrate;
a buried layer provided to cover the chip;
a seam generated within the buried layer and extending to the surface of the buried layer;
a sealing layer provided to cover the embedded layer and the seam portion;
Equipped with
Photodetection device.
(2)
a support substrate located on the opposite side of the substrate across the sealing layer and directly or indirectly supporting the sealing layer;
The photodetector according to (1).
(3)
at least a portion of the seam portion is a void;
The photodetector according to (1) or (2).
(4)
The sealing layer includes an extension portion that extends into the seam portion so as to fill at least a portion of the seam portion.
The photodetector according to any one of (1) to (3).
(5)
The material of the sealing layer includes a low permeability material.
The photodetector according to any one of (1) to (4).
(6)
The material of the sealing layer includes a low Young's modulus material.
The photodetector according to any one of (1) to (5).
(7)
comprising a side wall portion provided to cover a side surface of the chip;
The photodetector according to any one of (1) to (6).
(8)
The chip includes a first chip and a second chip that are spaced apart from each other,
The seam part includes a first seam part caused by the first chip and a second seam part caused by the second chip,
the first seam part and the second seam part are connected to each other,
The photodetector according to any one of (1) to (7).
(9)
an additional layer provided between the chip and the buried layer;
The photodetector according to any one of (1) to (8).
(10)
comprising an auxiliary layer provided to cover the sealing layer;
The photodetector according to any one of (1) to (9).
(11)
The auxiliary layer has a laminated structure,
The photodetector according to (10).
(12)
The chip includes at least one of a logic chip, a memory chip, and an AI (Artificial Intelligence) chip.
The photodetector according to any one of (1) to (11).
(13)
An imaging device configured to include a plurality of pixels,
The photodetector according to any one of (1) to (12).
(14)
a filter layer provided on the opposite side of the chip and the buried layer with the substrate in between;
a lens layer provided on the opposite side of the substrate with the filter layer in between;
Equipped with
The photodetector according to (13).
(15)
an additional substrate provided between the substrate and the buried layer;
The photodetector according to any one of (1) to (14).
(16)
The chip includes two chips arranged adjacent to each other with an interval,
The buried layer includes wiring provided between the two chips,
The photodetector according to any one of (1) to (15).
(17)
a supporting substrate that is provided on the opposite side of the substrate with the sealing layer in between and supports the sealing layer directly or indirectly;
a through via that penetrates the buried layer, the sealing layer, and the support substrate;
Equipped with
The photodetector according to any one of (1) to (16).

100 Photodetector 1 Substrate 1a Front surface 1b Back surface 1p Photodetector element 2 Chip 2b Mounting surface 3 Buried layer 3a Front surface 3b Back surface 4 Seam portion 4a Gap 5 Sealing layer 5a Extending portion 6 Auxiliary layer 61 layer 62 layer 63 layer 6a Surface 7 Support substrate 7a Front surface 7b Back surface 8 Side wall portion 9 Additional layer L Wiring 10 Filter layer 11 Lens layer 11a Lens 12 Additional substrate 12a Front surface 12b Back surface 12v Through via V Through via

Claims (17)

a substrate including a photodetector;
a chip provided on the substrate;
a buried layer provided to cover the chip;
a seam generated within the buried layer and extending to the surface of the buried layer;
a sealing layer provided to cover the embedded layer and the seam portion;
Equipped with
Photodetection device. a support substrate located on the opposite side of the substrate across the sealing layer and directly or indirectly supporting the sealing layer;
The photodetection device according to claim 1. at least a portion of the seam portion is a void;
The photodetection device according to claim 1. The sealing layer includes an extension portion that extends into the seam portion so as to fill at least a portion of the seam portion.
The photodetection device according to claim 1. The material of the sealing layer includes a low permeability material.
The photodetection device according to claim 1. The material of the sealing layer includes a low Young's modulus material.
The photodetection device according to claim 1. comprising a side wall portion provided to cover a side surface of the chip;
The photodetection device according to claim 1. The chip includes a first chip and a second chip that are spaced apart from each other,
The seam part includes a first seam part caused by the first chip and a second seam part caused by the second chip,
the first seam part and the second seam part are connected to each other,
The photodetection device according to claim 1. an additional layer provided between the chip and the buried layer;
The photodetection device according to claim 1. comprising an auxiliary layer provided to cover the sealing layer;
The photodetection device according to claim 1. The auxiliary layer has a laminated structure,
The photodetection device according to claim 10. The chip includes at least one of a logic chip, a memory chip, and an AI (Artificial Intelligence) chip.
The photodetection device according to claim 1. An imaging device configured to include a plurality of pixels,
The photodetection device according to claim 1. a filter layer provided on the opposite side of the chip and the buried layer with the substrate in between;
a lens layer provided on the opposite side of the substrate with the filter layer in between;
Equipped with
The photodetection device according to claim 13. an additional substrate provided between the substrate and the buried layer;
The photodetection device according to claim 1. The chip includes two chips arranged adjacent to each other with an interval,
The buried layer includes wiring provided between the two chips,
The photodetection device according to claim 1. a supporting substrate that is provided on the opposite side of the substrate with the sealing layer in between and supports the sealing layer directly or indirectly;
a through via that penetrates the buried layer, the sealing layer, and the support substrate;
Equipped with
The photodetection device according to claim 1.

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