JP2021048336A - Processing liquid generating method, processing liquid generating mechanism, semiconductor manufacturing apparatus and semiconductor manufacturing method - Google Patents

Abstract

To provide a processing liquid generating method and a processing liquid generating mechanism that generate a processing liquid having high reactivity.SOLUTION: A liquid droplet dispersion mechanism 11a1 performs first liquid droplet making processing that obtains a liquid droplet state medical liquid GC1 by supplying gas G1 to a medical liquid C1 and causing the medical liquid C1 to disperse into a liquid droplet state. A liquid droplet dispersion mechanism 11a2 performs second liquid droplet making processing that obtains a liquid droplet state medical liquid GC2 by supplying gas G2 to a medical liquid C2 and causing the medical liquid C2 to disperse into a liquid droplet state. A liquid droplet mixing mechanism 12a1 performs liquid droplet mixture processing that obtains a liquid droplet state processing liquid MC by mixing the liquid droplet state medical liquid GC1 and the liquid droplet state medical liquid GC2. A discharging nozzle 13a1 performs discharge processing that discharges the processing liquid MC which is received from the liquid droplet mixing mechanism 12a1 to the outside.SELECTED DRAWING: Figure 1

Description

The present invention relates to a treatment liquid generation method and a treatment liquid generation mechanism that mix at least the first and second chemical solutions to generate droplet-shaped treatment liquids, and further, a semiconductor manufacturing apparatus and treatment using the treatment liquid generation mechanism. The present invention relates to a semiconductor manufacturing method using a liquid generation method.

As a treatment liquid generation mechanism for obtaining a droplet-shaped treatment liquid by mixing two kinds of chemical solutions, for example, there is a foreign matter removing device disclosed in Patent Document 1.

This foreign matter removing device mixes two kinds of chemicals to obtain a liquid mixed chemicals, and then disperses the mixed chemicals with a gas to finally generate a droplet-shaped treatment liquid, and this treatment liquid is used. It was used to remove foreign matter on the substrate.

Japanese Unexamined Patent Publication No. 2005-39205

In the conventional method for producing a treatment solution by a foreign matter removing device disclosed in Patent Document 1, two chemical solutions are mixed in a chemical solution mixer to generate a liquid mixed chemical solution as a preliminary step for obtaining the treatment solution. When obtaining the mixed chemical solution, a stirrer is further added after the chemical solution mixer in order to ensure the uniformity of mixing of the two chemical solutions.

Since it is necessary to add a stirrer, the length of the pipe for obtaining the mixed chemical solution is inevitably lengthened. On the other hand, in order to ensure high reactivity of the treatment liquid in the form of droplets, it is desirable that the temperature is higher.

However, since the length of the pipe for obtaining the mixed chemical solution is long, the reaction heat generated by mixing the two chemical solutions is wastefully dissipated when the mixed chemical solution flows through the pipe. In this way, the temperature drops due to heat dissipation at the stage of the mixed chemical solution before it becomes a droplet-shaped treatment liquid, and the two-fluid nozzle as the treatment liquid generation mechanism gas the mixed chemical solution after the reaction heat is exhausted. If it is dispersed in droplets by, it will be exposed to a large amount of gas before it gets on the gas flow, and the temperature of the droplets will be almost adjusted to the temperature of the gas, so to accelerate the reaction by increasing the temperature, It is necessary to set the gas temperature as high as the temperature required by the processing conditions. The higher the temperature of the gas, the fewer options for structural materials that can achieve both heat resistance and chemical resistance, and the more expensive materials must be introduced.

The present invention has been made to solve the above problems, and an object of the present invention is to obtain a treatment liquid generation method and a treatment liquid generation mechanism for producing a treatment liquid having high reactivity.

The treatment liquid generation method according to claim 1 according to the present invention includes a first dropletization treatment in which a first chemical solution is dropletized to obtain a first droplet-like chemical solution, and a second chemical solution is dropletized. The second droplet-forming treatment for obtaining the second droplet-like chemical solution and at least the first droplet-like chemical solution and the second droplet-like chemical solution are mixed to obtain a droplet-like treatment solution. It comprises a droplet mixing process to obtain.

The method for producing a treatment solution of the present invention according to claim 1 does not mean that the chemical solution is mixed as a liquid and then dispersed in droplets with a gas as in the conventional case, but at least the first droplet-like chemical solution and the second. A droplet mixing process is performed in which a droplet-like chemical solution is mixed to obtain a droplet-like treatment solution.

Therefore, when the droplet mixing process is executed, the first and second droplet-like chemicals are instantly and densely mixed, and the mixed first and second droplet-like chemicals are fine and have a small heat capacity, so that they are rapidly mixed. It gets hot. That is, since the time for raising the temperature is short, the pipe length required for the droplet mixing process can be made relatively short, so that the decrease in reactivity due to heat dissipation from the pipe can be suppressed.

Therefore, the treatment liquid generation method according to the present invention according to claim 1 can generate a treatment liquid having high reactivity by keeping the pipe length of the pipe required for the droplet mixing treatment relatively short. ..

It is explanatory drawing which shows the internal structure of the processing liquid generation mechanism which becomes the basic structure of Embodiment 1. FIG. It is explanatory drawing which shows the internal structure of the processing liquid generation mechanism in Embodiment 1. FIG. It is explanatory drawing which shows the internal structure of the semiconductor manufacturing apparatus in Embodiment 1. FIG. It is a block diagram which shows the structure of the control system of the semiconductor manufacturing apparatus shown in FIG. It is a flowchart which shows the process of the semiconductor manufacturing method by the semiconductor manufacturing apparatus shown in FIG. It is explanatory drawing which shows the internal structure of the processing liquid generation mechanism of Embodiment 2. It is explanatory drawing which shows typically the internal structure of the processing liquid generation mechanism which becomes a comparative technique.

<Comparison technology>
FIG. 7 is an explanatory diagram schematically showing an internal configuration of a processing liquid generation mechanism and a peripheral portion thereof, which is a comparative technique, included in the foreign matter removing device disclosed in Patent Document 1. Hereinafter, the processing generation mechanism shown in FIG. 7 will be described as a comparative technique with respect to the processing liquid generation mechanisms 10A to 10C described later.

As shown in the figure, the overall configuration including the treatment liquid generation mechanism 10Z, which is a comparative technique, mainly comprises the treatment liquid generation mechanism 10Z, the gas supply mechanism 20Z, the circulation temperature control supply mechanism 30Z, and the chemical liquid supply mechanism 40Z. Includes.

These main components are connected by pipes (not shown). In FIG. 7, for convenience of explanation, the piping is omitted by showing the flow of the gas G0, the gas G1, the chemical solution C1, the chemical solution C2, the mixed chemical solution MC9, the treatment solution MC, and the like, which will be described later.

The treatment liquid generation mechanism 10Z includes a droplet dispersion mechanism 11z1, a discharge nozzle 13z1, a joint 14z1, a joint 14z2, a chemical liquid mixer 15z1, and a stirrer 16z1 as main components, and is expressed as a two-fluid nozzle by comparative technology. The portion is composed of a droplet dispersion mechanism 11z1, a discharge nozzle 13z1, a joint 14z1, and a joint 14z2.

The gas supply mechanism 20Z includes a flow rate regulator 22z1, a valve 21z1, a valve 21z2, and a temperature regulator 25z1 as main components.

The circulation temperature control supply mechanism 30Z includes a valve 31z1 to a valve 31z4, a flow rate regulator 32z1 to a flow rate regulator 32z3, a pump 33z1, a filter 34z1, a temperature regulator 35z1, and a tank 36z1 as main components.

The chemical supply mechanism 40Z includes a valve 41z1, a flow rate regulator 42z1 and a filter 44z1 as main components.

The gas G1 is supplied from the gas supply mechanism 20Z to the treatment liquid generation mechanism 10Z, and the chemical solution C1 and the chemical solution C2 are supplied from the circulation temperature control supply mechanism 30Z and the chemical solution supply mechanism 40Z.

In the gas supply mechanism 20Z, gas G0 is supplied to the flow rate regulator 22z1, and when the valve 21z1 is "open" and the valve 21z2 is "closed", the gas G0 passes through the flow rate regulator 22z1 and the temperature regulator 25z1. As a result, the gas G1 whose flow rate and temperature have been adjusted can be obtained.

On the other hand, when the valve 21z1 is set to "closed" and the valve 21z2 is set to "open", a normal temperature gas G1 in which the gas G0 has passed only through the flow rate regulator 22z1 is obtained. That is, the gas G1 whose flow rate is considered to be adjusted is supplied to the droplet dispersion mechanism 11z1 of the treatment liquid generation mechanism 10Z.

In the circulation temperature control supply mechanism 30Z, the chemical solution C1 is stored in the tank 36z1 while being adjusted to a required temperature, and temperature unevenness is suppressed by circulation. Specifically, the operation is performed by opening the valve 31z3 and returning the chemical solution C1 in the tank 36z1 to the tank 36z1 through the filter 34z1, the temperature regulator 35z1, the valve 31z3, and the flow rate regulator 32z3 by the pump 33z1. , The temperature of the chemical solution C1 is adjusted. The direct temperature control of the chemical solution C1 is performed by the temperature controller 35z1.

Further, the valve 31z1 and the valve 31z2 perform a repulsive operation, and when supplying the chemical solution C1 to the chemical solution mixer 15z1, the valve 31z1 is set to "open" and the valve 31z2 is set to "closed", and at other times, the valve 31z2 is set to "closed". The valve 31z1 is "closed" and the valve 31z2 is "open".

By making the flow rate settings of the flow rate regulator 32z1 and the flow rate regulator 32z2 the same, fluctuations in the circulating flow rate when switching between opening and closing between the valves 31z1 and valve 31z2 can be suppressed, and the flow rate can be adjusted when there are multiple supply systems. Although the number of supply systems equivalent to the combination of the device 32z1 and the flow rate regulator 32z2 is provided as many as the number of supply systems, mutual interference between the supply systems can be suppressed. When the chemical solution C1 in the tank 36z1 decreases, the valve 31z4 is opened to replenish the tank 36z1 with the stock solution of the chemical solution C1.

In the chemical solution supply mechanism 40Z, by opening the valve 41z1, the stock solution of the chemical solution C2 can be supplied to the chemical solution mixer 15z1 through the filter 44z1 and the flow rate regulator 42z1.

In the chemical solution mixer 15z1 constituting the treatment liquid generation mechanism 10Z, the supplied chemical solution C1 and the chemical solution C2 are mixed in a liquid state, but only the flow paths of the chemical solution chemical solution C1 and the chemical solution C2 are aligned. Therefore, the stirring ability of the chemical solution mixer 15z1 itself is low, and the uniformity of mixing becomes insufficient. Therefore, a stirrer 16z1 is added after the chemical solution mixer 15z1 to ensure the uniformity of mixing of the chemical solution C1 and the chemical solution C2 in the mixed chemical solution MC9.

The mixed chemical liquid MC9 that has passed through the stirrer 16z1 is supplied to the droplet dispersion mechanism 11z1 of the treatment liquid generation mechanism 10Z.

In the droplet dispersion mechanism 11z1, the mixed chemical solution MC9 is dispersed in the droplets by the gas G1 to generate the droplet-shaped processing solution MC. The generated processing liquid MC is discharged to the outside from the discharge nozzle 13z1.

In a comparative technique having such a configuration, consider a case where the chemical solution C1 is sulfuric acid (H ₂ SO ₄ ) and the chemical solution C2 is hydrogen peroxide solution (H ₂ O ₂ ) to generate a treatment liquid MC for removing a resist.

In this case, sulfuric acid (H ₂ SO ₄ ) is supplied by adjusting the temperature to about 90 ° C. by a temperature controller 35z1, and hydrogen peroxide solution (H ₂ O ₂ ) is supplied from a medicine tank or a canister installed at room temperature. A method of supplying directly from the container is conceivable.

In the comparative technique, in the gas supply mechanism 20Z, the valve 21z1 is "open" and the valve 21z2 is "closed" so that the gas temperature of the gas G1 becomes, for example, 130 ° C. or higher by heat treatment of the temperature regulator 25z1. Can be adjusted.

In this case, the temperature of the gas is a temperature equivalent to about 130 ° C., which the mixed chemical solution of _{sulfuric acid (H 2} SO ₄ ) and hydrogen peroxide solution (H ₂ O _{2) will reach by the heat of reaction.}

An appropriate condition required for the treatment liquid MC is to ensure high reactivity at high temperature in a state where a _{high concentration of persulfate (caroic acid) (H 2} SO _{5) is generated by mixing.}

However, in the above-mentioned comparative technique, the chemical solution C1 and the chemical solution C2 are mixed in a liquid state to obtain a mixed chemical solution MC9. Therefore, in order to ensure the uniformity of mixing of the mixed chemical solution MC9, it is necessary to take measures such as adding a stirrer 16z1 to the subsequent stage of the chemical solution mixer 15z1.

Due to the above measures, the length of the pipe through which the mixed chemical solution MC9 flows is inevitably lengthened, and the heat of reaction _{between sulfuric acid (H 2} SO ₄ ) and hydrogen peroxide solution (H ₂ O _{2) used to raise the temperature is transferred.} Heat is wasted from pipes with a relatively long pipe length. Therefore, although it is necessary to ensure high reactivity of the droplet-shaped treatment liquid MC by raising the temperature of the mixed chemical liquid MC9, the heat radiation phenomenon from the pipe through which the mixed chemical liquid MC9 flows causes the droplet-shaped treatment liquid MC to become It causes a decrease in reactivity. For example, when the treatment liquid MC is for removing resist, it causes a decrease in resist removing ability.

Further, in the droplet dispersion mechanism 11z1, the mixed chemical solution MC9 after the reaction heat is exhausted is dispersed in the droplets by the gas G1. Therefore, it is exposed to a large amount of gas G1 before it gets on the flow of gas G1, and the temperature of the treatment liquid MC in the droplet state is substantially adjusted to the temperature of gas G1. Therefore, in order to secure high reactivity of the droplet-shaped processing liquid MC, it is necessary to set the temperature of the gas G1 as high as the temperature required by the processing conditions.

However, when the temperature of the gas G1 is raised, it is necessary to select a structural material capable of achieving both heat resistance and chemical resistance for the flow paths of the gas supply mechanism 20Z and the treatment liquid generation mechanism 10Z, depending on the degree of high temperature. For this reason, there is almost no choice of structural materials for the chemical solution C1 and the chemical solution C2, and there is also a problem that an expensive structural material must be introduced, such as using SiC in a portion where the strength of the fluororesin is insufficient.

The treatment liquid generation mechanism and the treatment liquid generation method described in the following embodiments have been attempted to solve the problems of the above-mentioned comparison technique.

<Embodiment 1>
(Basic configuration)
FIG. 1 is an explanatory diagram showing an internal configuration of the processing liquid generation mechanism 10A, which is the basic configuration of the first embodiment.

The treatment liquid generation mechanism 10A includes a droplet dispersion mechanism 11a1, a droplet dispersion mechanism 11a2, a droplet mixing mechanism 12a1, a discharge nozzle 13a1, and joints 14a1 to 14a8 as main components.

These main components are connected either directly or by piping (not shown). In FIG. 1, for convenience of explanation, the flow of gas G1, gas G2, chemical solution C1, chemical solution C2, droplet-like chemical solution GC1, droplet-like chemical solution GC2, treatment liquid MC, and the like, which will be described later, is shown in the piping. The illustration is omitted.

The droplet dispersion mechanism 11a1, which is the first droplet dispersion mechanism, supplies the gas G1 which is the first gas to the chemical solution C1 which is the first chemical solution, disperses the chemical solution C1 into the droplets, and first. The first droplet-forming treatment for obtaining the droplet-like chemical solution GC1 which is the droplet-like chemical solution of the above is executed.

The gas G1 is supplied to the inside of the droplet dispersion mechanism 11a1 via the joint 14a1, the chemical solution C1 is supplied to the inside of the droplet dispersion mechanism 11a1 via the joint 14a2, and the droplet mixing mechanism is supplied to the inside of the droplet dispersion mechanism 11a1 via the joint 14a3 and the joint 14a7. The droplet-shaped chemical solution GC1 is supplied to 12a1.

The droplet dispersion mechanism 11a2, which is the second droplet dispersion mechanism, supplies the gas G2, which is the second gas, to the chemical solution C2, which is the second chemical solution, and disperses the chemical solution C2 into the droplets to obtain the second chemical solution C2. A second droplet-forming process for obtaining the droplet-like chemical solution GC2, which is the droplet-like chemical solution of the above, is executed.

Gas G2 is supplied to the inside of the droplet dispersion mechanism 11a2 via the joint 14a4, chemical solution C2 is supplied to the inside of the droplet dispersion mechanism 11a2 via the joint 14a5, and the droplet mixing mechanism is supplied to the inside of the droplet dispersion mechanism 11a2 via the joint 14a6 and the joint 14a8. The droplet-shaped chemical solution GC2 is supplied to 12a1.

The droplet mixing mechanism 12a1 executes a droplet mixing process of mixing the droplet-shaped chemical solution GC1 and the droplet-shaped chemical solution GC2 to obtain a droplet-shaped processing solution MC.

The discharge nozzle 13a1 executes a discharge process of discharging the processing liquid MC received from the droplet mixing mechanism 12a1 to the outside.

In the treatment liquid generation method by the treatment liquid generation mechanism 10A described above, the droplet mixing treatment by the droplet mixing mechanism 12a1 is executed following the first and second droplet formation treatments by the droplet dispersion mechanisms 11a1 and 11a2. As a result, a droplet-shaped treatment liquid MC is generated.

As described above, in the treatment liquid generation mechanism 10A which is the basic configuration of the first embodiment, the droplet-like chemical solutions GC1 and GC2 obtained by the droplet dispersion mechanisms 11a1 and 11a2 are dispersed into fine droplets and the gases G1 and G2 are dispersed. I'm on the flow of. Therefore, when the droplet mixing process is executed by the droplet mixing mechanism 12a1, the droplet-like chemicals GC1 and GC2 are instantly and densely mixed in a relatively short period of time, and the droplet having a small heat capacity rapidly rises in temperature due to the heat of reaction. To do. That is, since the pipe length from the droplet mixing mechanism 12a1 to the discharge nozzle 13a1 can be made relatively short, it is possible to suppress a decrease in reactivity due to heat dissipation from the pipe. On the other hand, since the generated droplet-shaped processing liquid MC rides on the mixed gas flow, it is insulated by the surrounding gas, and the generated droplet-shaped processing liquid MC has a gas temperature. The heat dissipation is gentle even if it is lower than the temperature of the liquid MC. Therefore, it becomes possible to use the droplet-shaped treatment liquid MC in an appropriate condition that ensures high reactivity by increasing the temperature.

Therefore, according to the treatment liquid generation method using the treatment liquid generation mechanism 10A, the decrease in the reactivity of the treatment liquid MC is suppressed, and the temperatures of the gases G1 and G2 dispersed in the droplets are lower than the temperatures obtained under the treatment conditions. The processing time can be shortened by realizing a treatment liquid generation method that can be set and ensuring high reactivity of the treatment liquid MC. For example, when the treatment liquid MC is for removing resist, the resist removing ability can be kept high. Further, the semiconductor manufacturing apparatus using the processing liquid generation mechanism 10A can be expected to improve the production capacity.

(Processing solution generation method)
FIG. 2 is an explanatory diagram showing the internal configuration of the treatment liquid generation mechanism 10B of the first embodiment and its peripheral portion. The treatment liquid generation mechanism 10B has the same basic configuration and basic operation as the treatment liquid generation mechanism 10A, and is further developed from the treatment liquid generation mechanism 10A to realize an integrated configuration in consideration of practicality.

Specifically, the droplet dispersion mechanism 11a1 and the droplet dispersion mechanism 11b1, the droplet dispersion mechanism 11a2 and the droplet dispersion mechanism 11b2, the droplet mixing mechanism 12a1 and the droplet mixing mechanism 12b1, the ejection nozzle 13a1 and the ejection nozzle 13b1 The components are equivalent to each other. For example, the droplet mixing mechanism 12a1 and the droplet mixing mechanism 12b1 perform substantially the same droplet mixing process.

The overall configuration including the treatment liquid generation mechanism 10B of the first embodiment includes the treatment liquid generation mechanism 10B, the gas supply mechanism 20B, the circulation temperature control supply mechanism 30B, and the chemical liquid supply mechanism 40B as main components.

These main components are connected by pipes (not shown). In FIG. 2, for convenience of explanation, the flow of gas G0, gas G1, gas G2, chemical solution C1, chemical solution C2, droplet-like chemical solution GC1, droplet-like chemical solution GC2, treatment solution MC, and the like, which will be described later, is illustrated. The piping is not shown.

The treatment liquid generation mechanism 10B includes a droplet dispersion mechanism 11b1, a droplet dispersion mechanism 11b2, a droplet mixing mechanism 12b1, a discharge nozzle 13b1, and joints 14b1 to 14b4 as main components.

The treatment liquid generation mechanism 10B has a structure in which the droplet dispersion mechanisms 11b1 and 11b2, the droplet mixing mechanism 12b1, the discharge nozzle 13b1 and the joints 14b1 to 14b4 are integrated.

The droplet dispersion mechanism 11b1, which is the first droplet dispersion mechanism, supplies the gas G1 which is the first gas to the chemical solution C1 which is the first chemical solution, disperses the chemical solution C1 into the droplets, and first. The first droplet-forming treatment for obtaining the droplet-like chemical solution GC1 which is the droplet-like chemical solution of the above is executed.

Gas G1 is supplied to the inside of the droplet dispersion mechanism 11b1 via the joint 14b1, chemical solution C1 is supplied to the inside of the droplet dispersion mechanism 11b1 via the joint 14b2, and droplets are supplied to the droplet mixing mechanism 12b1 within the above structure. The chemical solution GC1 is supplied.

The droplet dispersion mechanism 11b2, which is the second droplet dispersion mechanism, supplies the gas G2, which is the second gas, to the chemical solution C2, which is the second chemical solution, and disperses the chemical solution C2 into the droplets to obtain the second chemical solution C2. A second droplet-forming process for obtaining the droplet-like chemical solution GC2, which is the droplet-like chemical solution of the above, is executed.

Gas G2 is supplied to the inside of the droplet dispersion mechanism 11b2 via the joint 14b3, chemical solution C2 is supplied to the inside of the droplet dispersion mechanism 11b2 via the joint 14b4, and droplets are supplied to the droplet mixing mechanism 12b1 within the above structure. The chemical solution GC2 is supplied.

The droplet mixing mechanism 12b1 executes a droplet mixing process of mixing the droplet-shaped chemical solution GC1 and the droplet-shaped chemical solution GC2 to obtain a droplet-shaped processing solution MC.

The discharge nozzle 13b1 executes a discharge process of discharging the processing liquid MC received from the droplet mixing mechanism 12b1 to the outside.

The gas supply mechanism 20B includes a valve 21b1, a valve 21b2, a flow rate regulator 22b1, a flow rate regulator 22b2, and a temperature regulator 25b1 as main components.

The circulation temperature control supply mechanism 30B includes a valve 31b1 to a valve 31b4, a flow rate regulator 32b1 to a flow rate regulator 32b3, a pump 33b1, a filter 34b1, a temperature regulator 35b1, and a tank 36b1 as main components.

The chemical supply mechanism 40B includes a valve 41b1, a flow rate regulator 42b1 and a filter 44b1 as main components.

Gas G1 and gas G2 are supplied from the gas supply mechanism 20B to the treatment liquid generation mechanism 10B, and chemical liquid C1 and chemical liquid C2 are supplied from the circulation temperature control supply mechanism 30B and the chemical liquid supply mechanism 40B.

In the gas supply mechanism 20B, a valve 21b1, a temperature controller 25b1 and a valve 21b2 are provided in parallel between the supplied gas G0 and the intermediate point P20. From the intermediate point P20 to the treatment liquid generation mechanism 10B, it is connected to the joint 14b1 via the flow rate regulator 22b1 and further connected to the joint 14b3 via the flow rate regulator 22b2.

In the gas supply mechanism 20B having such a configuration, when the valve 21b1 is "open" and the valve 21b2 is "closed", the gas G0 passes through the temperature regulator 25b1 and the temperature is adjusted at the intermediate point P20. Is obtained.

On the other hand, when the valve 21b1 is "closed" and the valve 21b2 is "open", the gas G0 is supplied to the intermediate point P20 at room temperature without adjusting the temperature.

The gas G0 from the intermediate point P20 is supplied to the droplet dispersion mechanism 11b1 via the joint 14b1 as the gas G1 that has passed through the flow rate regulator 22b1, and further, the joint 14b3 is supplied as the gas G2 that has passed through the flow rate regulator 22b2. It is supplied to the droplet dispersion mechanism 11b2 via.

That is, when the gas G0 is supplied to the valve 21b1 and the valve 21b2, the valve 21b1 is "open" and the valve 21b2 is "closed", the gas G0 passes through the temperature regulator 25b1 and the flow rate regulator 22b1. , The gas G1 whose temperature is adjusted and the flow rate is adjusted is obtained, and the gas G0 passes through the temperature regulator 25b1 and the flow rate regulator 22b2 to obtain the gas G2 whose temperature is adjusted and the flow rate is adjusted.

On the other hand, when the valve 21b1 is set to "closed" and the valve 21b2 is set to "open", the gas G0 passes only through the flow rate regulator 22b1 to obtain a normal temperature gas G1 in which only the flow rate is adjusted, and the gas G0. Passes only through the flow rate regulator 22b2, so that the gas G2 at room temperature in which only the flow rate is adjusted can be obtained.

In the circulation temperature control supply mechanism 30B, the chemical solution C1 is stored in the tank 36b1 while being adjusted to the temperature set in the recipe, and the temperature unevenness is suppressed by circulation. Specifically, the operation is performed by opening the valve 31b3 and returning the chemical solution C1 in the tank 36b1 to the tank 36b1 through the filter 34b1, the temperature regulator 35b1, the valve 31b3, and the flow rate regulator 32b3 by the pump 33b1. , The temperature of the chemical solution C1 is adjusted. The direct temperature control of the chemical solution C1 is performed by the temperature controller 35b1.

Further, the valve 31b1 and the valve 31b2 perform a repulsive operation, and when the chemical solution C1 is supplied to the droplet dispersion mechanism 11b1, the valve 31b1 is "open" and the valve 31b2 is "closed", and at other times. Sets the valve 31b1 to "closed" and the valve 31b2 to "open".

When the valve 31b1 is "open", the chemical solution C1 is supplied to the droplet dispersion mechanism 11b1 via the valve 31b1, the flow rate regulator 32b1 and the joint 14b2.

By making the flow rate settings of the flow rate regulator 32b1 and the flow rate regulator 32b2 the same, fluctuations in the circulating flow rate when switching between opening and closing between the valves 31b1 and valve 31b2 can be suppressed, and the flow rate can be adjusted when there are multiple supply systems. Although the number of supply systems equivalent to the combination of the device 32b1 and the flow rate regulator 32b2 is provided as many as the number of supply systems, mutual interference between the supply systems can be suppressed. When the amount of the chemical solution C1 in the tank 36b1 decreases, the valve 31b4 is opened to replenish the tank 36b1 with the stock solution of the chemical solution C1.

By opening the valve 41b1, the chemical supply mechanism 40B can supply the stock solution of the chemical liquid C2 to the droplet dispersion mechanism 11b2 via the filter 44b1, the valve 41b1, the flow rate regulator 42b1 and the joint 14b4. it can.

In the first embodiment, consider a case where the chemical solution C1 is sulfuric acid (H ₂ SO ₄ ) and the chemical solution C2 is hydrogen peroxide solution (H ₂ O ₂ ) to generate a treatment liquid MC for removing the resist.

In this case, sulfuric acid (H ₂ SO ₄ ) is supplied by adjusting the temperature to about 90 ° C. by the temperature controller 35b1, and hydrogen peroxide solution (H ₂ O ₂ ) is supplied from a medicine tank or canister installed at room temperature. A method of supplying directly from the container is conceivable.

In the first embodiment, in the gas supply mechanism 20B, the valve 21b1 is "open" and the valve 21b2 is "closed" so that the gas temperature of the gas G1 and the gas G2 becomes, for example, 130 ° C. or higher. The temperature adjustment process can be performed by the heat treatment of.

In this case, the temperature of the gas when each of the sulfuric acid (H ₂ SO ₄ ) and the hydrogen peroxide solution (H ₂ O ₂ ) is dispersed in the droplets may be higher than _{the temperature of the sulfuric acid (H 2} SO _4). it can.

_{The reason why the hydrogen peroxide solution (H 2} O ₂ ), which is a constituent material of the chemical solution C2, is not heated in advance by circulating temperature control or the like is that the hydrogen peroxide solution (H ₂ O ₂ ) contains a large amount of metal impurities. This is to prevent rapid decomposition due to high temperature.

_{The droplet dispersion mechanism 11b1 disperses sulfuric acid (H 2} SO ₄ ), which is a constituent material of the chemical solution C1, into droplets heated to a temperature higher than 90 ° C. by the gas G1. _{On the other hand, the hydrogen peroxide solution (H 2} O ₂ ), which is a constituent material of the chemical solution C2, is dispersed by the droplet dispersion mechanism 11b2 into droplets heated to a temperature higher than normal temperature by the gas G2.

_{In the droplet mixing mechanism 12b1, sulfuric acid (H 2} SO ₄ ) dispersed in droplets, which is a droplet-like chemical solution GC1, and hydrogen peroxide solution (H) dispersed in droplets, which is a droplet-like chemical solution GC2, are used. _The heat of reaction generated when mixing 2 O ₂ ) is further added to the above-mentioned heating state.

As a result, the droplet mixing mechanism 12b1 processes the droplets at a higher temperature than the case where _{sulfuric acid (H 2} SO ₄ ) at 90 ° C. and hydrogen peroxide solution (H ₂ O _{2) at room temperature are simply mixed.} Liquid MC can be produced.

The treatment liquid generation mechanism 10B of the first embodiment is instantly compacted by mixing the droplet-like chemicals GC1 and GC2 dispersed in two fine droplets in a state of riding on the flow of the gas G1 and G2. The droplet-shaped treatment liquid MC that is mixed with and generated is rapidly heated to a high temperature by the accumulated reaction heat because it is fine and has a small heat capacity.

Further, since the generated droplet-shaped processing liquid MC rides on the mixed gas flow, it is insulated by the surrounding gas, and the temperature of the gas is assumed to be the generated droplet-shaped processing. Even when the temperature is lower than the temperature of the liquid MC, the heat dissipation is gentle.

On the other hand, in the droplet dispersion mechanism 11z1 shown in FIG. 7, since the mixed chemical solution MC9 after the reaction heat is exhausted is dispersed in the droplets by the gas G1, it is exposed to a large amount of gas before getting on the flow of the gas G1. Therefore, the temperature of the droplet becomes almost the same as the temperature of the gas G1. Therefore, in order to secure high reactivity of the treatment liquid MC, it is necessary to set the temperature of the gas G1 as high as the temperature required by the treatment conditions.

On the other hand, in the treatment liquid generation mechanism 10B, the droplet-like chemical solution GC1 and the droplet-like chemical solution GC2 are instantly and densely mixed, so that the mixture is mixed from the droplet mixing mechanism 12b1 to the discharge via the discharge nozzle 13b1. The pipe length required for this can be shortened, and the temperature drop due to heat dissipation from the pipe can be suppressed.

Further, in the treatment liquid generation mechanism 10B, the droplet dispersion mechanisms 11b1 and 11b2, the droplet mixing mechanism 12b1 and the discharge nozzle 13b1 are integrally configured.

Therefore, the first and second droplet formation treatments by the droplet dispersion mechanisms 11b1 and 11b2, the droplet mixing treatment by the droplet mixing mechanism 12b1, and the ejection treatment by the ejection nozzle 13b1 can be performed in a relatively narrow processing region. it can.

As a result, heat dissipation from the treatment liquid generation mechanism 10B can be minimized during the operation of the treatment liquid generation mechanism 10B of the first embodiment.

By the way, as described above, when the chemical solution C2 is a hydrogen peroxide solution (H ₂ O ₂ ) and contains a large amount of metal impurities, there is a concern that the chemical solution C2 may be rapidly decomposed due to the high temperature of the chemical solution C2 due to the gas G2. However, in the first embodiment, the above concerns can be almost ignored.

The reason is that in the treatment liquid generation mechanism 10B of the first embodiment, the period in which the chemical solution C2 and the droplet-like chemical solution GC2 are heated to a high temperature is sufficiently short, and after the droplet-like chemical solution GC2 is obtained by the droplet dispersion mechanism 11b2, This is because the droplet dispersion mechanism 11c1 promptly executes the droplet mixing process with the droplet-like chemicals GC1 and GC2.

Therefore, according to the treatment liquid generation method using the treatment liquid generation mechanism 10B, the treatment time can be shortened by ensuring high reactivity as in the treatment liquid generation mechanism 10A. Further, the semiconductor manufacturing apparatus using the processing liquid generation mechanism 10B can be expected to improve the production capacity.

By the way, in the case of generating the treatment liquid MC for removing the resist, the temperature of the chemical liquid C1 at the time of executing the first droplet formation treatment by the droplet dispersion mechanism 11b1 is set to TC1, the temperature of the gas G1 is set to TG1, and the droplet dispersion is performed. When the temperature of the chemical solution C2 at the time of executing the second droplet formation process by the mechanism 11b2 is TC2 and the temperature of the gas G2 is TG2, both the condition 1 "TC1 <TG1" and the condition 2 "TC2 <TG2" are satisfied. ing.

As described above, the treatment liquid generation mechanism 10B of the first embodiment is characterized by having a temperature controller 25b1 that satisfies both the conditions 1 and 2. That is, the gas temperature control conditions imposed on the temperature control process of the temperature controller 25b1 satisfy both the condition 1 and the condition 2.

Since the treatment liquid generation mechanism 10B has the above-mentioned characteristics, both the droplet-like chemicals GC1 and GC2 obtained by the first and second droplet formation treatments are brought into a higher temperature state than the states of the chemical liquids C1 and C2 before the droplet formation. Can be set.

As a result, the treatment liquid generation mechanism 10B can execute the droplet mixing treatment by the droplet mixing mechanism 12b1 in a relatively high temperature state, so that the reactivity of the treatment liquid MC can be further improved.

If at least one of the above conditions 1 and 2 is satisfied, the reactive effect of the treatment liquid MC can be exhibited. That is, with respect to at least one droplet dispersion mechanism having a temperature controller in the preceding stage among the droplet dispersion mechanisms 11b1 and 11b2, the temperature of at least one chemical solution to be processed by at least one droplet dispersion mechanism is set to TC. When the temperature of at least one gas is TG, the gas temperature control condition is that the condition "TC <TG" is satisfied.

(Semiconductor manufacturing equipment)
FIG. 3 is an explanatory diagram showing an internal configuration of a processing mechanism 200 which is a main part of the semiconductor manufacturing apparatus according to the first embodiment. The treatment mechanism 200 includes the main components including the treatment liquid generation mechanism 10B of the first embodiment and its peripheral portion, and further, a wafer chuck stage mechanism 2, a cup mechanism 3, a nozzle scan mechanism 4, an air-water separator 5a, and a water supply. Includes mechanism 50B. Hereinafter, components equivalent to those in FIG. 2 will be designated by the same reference numerals, description thereof will be omitted as appropriate, and features unique to the processing mechanism 200 will be mainly described.

The wafer chuck stage mechanism 2 holds the mounted semiconductor wafer 1 on the wafer stage 2a. After the semiconductor wafer 1 is placed on the wafer stage 2a, the semiconductor wafer 1 is held by the wafer chuck 2b. The wafer stage 2a can be rotated by the stage rotation motor 2c.

The nozzle scan mechanism 4 includes a scan arm 4a, a scan shaft 4b, and a scan motor 4c as main components.

By rotating the scan shaft 4b by the rotational operation of the scan motor 4c and moving the scan shaft 4b up and down, the processing liquid generation mechanism 10B fixed to the scan arm 4a is moved above the semiconductor wafer 1, and the semiconductor wafer 1 is moved. The discharge nozzle 13b1 for discharging the processing liquid MC is positioned at the height taught from the upper surface of the above.

The cup mechanism 3 includes a chemical solution cup 3a, a flush cup 3b, and a guard 3c as main components. In the cup mechanism 3, the path 3x between the chemical solution cup 3a and the flush cup 3b serves as a path for discharging the treatment liquid MC, and the path 3y between the flush cup 3b and the guard 3c serves as a path for discharging the water W.

The water supply mechanism 50B has a valve 51b1. When washing the semiconductor wafer 1 with water, the valve 51b1 is opened to supply water W to the semiconductor wafer 1.

FIG. 4 is a block diagram showing a part of the configuration of the control system of the processing mechanism 200 shown in FIG.

As shown in the figure, the control system of the processing mechanism 200 includes an operation PC 101 and a control PLC (Programmable Logic Controller) 102.

The operation PC 101 gives a control instruction to the control PLC 102, and the control PLC 102 controls the processing mechanism 200 according to the control instruction from the operation PC 101.

The operating PC 101 includes MM-IF (man-machine interface) 101a and PC101b as main components.

The control PLC 102 includes the PLC 102a, a chamber control unit 102b controlled by the PLC 102a, a gas control unit 102c, a first chemical solution control unit 102d, a second chemical solution control unit 102e, and a flush control unit 102f as main components.

The control performed by the chamber control unit 102b includes a stage rotation control 102b1, a chuck opening / closing control 102b2, a cup up / down control 102b3, and a nozzle scan control 102b4.

As components not shown in FIGS. 3 and 4, a carrier for accommodating the semiconductor wafer 1, a load port which is a main component of the transport mechanism of the semiconductor manufacturing apparatus, and a semiconductor wafer between the load port and the processing mechanism 200. A robot or the like that conveys 1 is also included, but for convenience of explanation, the illustration of these components is omitted.

FIG. 5 is a flowchart showing a process flow of a semiconductor manufacturing method by the processing mechanism 200 of the second embodiment shown in FIG. The steps shown in S1 to S13 shown in FIG. 5 are sequentially executed under the control of the control system shown in FIG.

Hereinafter, a semiconductor manufacturing method using the processing mechanism 200 of the second embodiment will be described with reference to FIG.

First, the processes up to the step of S1 will be described.

A carrier (not shown) containing the semiconductor wafer 1 is installed in a load port (not shown), and the MM-IF101a operates the PC101b to send a command to the PLC102a to start the mapping process. The mapping process is a process of recognizing the slot position of the semiconductor wafer 1 housed in the carrier. The load port includes a stage and a mapping mechanism for the carrier to be set by the operator as main components, and is a carrier holding mechanism for a transfer robot (not shown) to move the semiconductor wafer 1 in and out of the carrier. is there.

After the mapping process is completed, the operator grasps the slot position of the semiconductor wafer 1 housed in the carrier on the MM-IF101a, and further operates the PC101b by the MM-IF101a to collectively or preset each slot. Select a recipe and send a command to PLC102a to start processing based on the recipe. The processing of the semiconductor wafer 1 is sequentially advanced while communicating the parameters, monitor values, etc. set in the recipe between the PC101b and the PLC102a.

After the above work by the worker, the process of S1 is reached. The step S1 shows a step of transporting the semiconductor wafer to be processed to the processing mechanism.

On the processing mechanism 200 side, the chemical solution cup 3a and the water washing cup 3b are located below the origin so that the semiconductor wafer 1 can be placed, and the wafer chuck 2b is opened to wait by the chuck opening / closing control 102b2. ..

In this waiting state, the semiconductor wafer 1 is sequentially taken out from the selected slots by a transfer robot (not shown) and placed on the wafer stage 2a on the processing mechanism 200 side.

After the semiconductor wafer 1 is normally placed on the wafer stage 2a, the wafer chuck 2b is "closed" by the chuck opening / closing control 102b2 to hold the semiconductor wafer 1.

By executing the step S1 in this way, the semiconductor wafer 1 to be manufactured is conveyed to the processing mechanism 200.

Next, in the step of S2, by supplying the gas G0 to the gas supply mechanism 20B, the gases G1 and G2 are supplied to the droplet dispersion mechanisms 11b1 and 11b2 of the treatment liquid generation mechanism 10B. At this time, of the valve 21b1 and the valve 21b2, one is "open" and the other is "closed" to supply the gas G0, and the gas G0 passes through the flow rate regulator 22b1 and the flow rate regulator 22b2, whereby the gas G1 and the gas G1 and The gas temperature and gas flow rate of each G2 are set.

The process of S2 is executed under the control of the gas control unit 102c. When adjusting the temperature of the gas G0, the gas control unit 102c sets the set temperature of the temperature regulator 25b1 to the temperature set in the recipe, and sets the valve 21b1 to "open" and the valve 21b2 to "close". ..

When the temperature of the gas G0 is not adjusted, the gas control unit 102c opens the valve 21b2 and closes the valve 21b1.

Regardless of the temperature adjustment of the gas G0, the gas control unit 102c sets the adjusted flow rates of the flow rate regulator 22b1 and the flow rate regulator 22b2 to the flow rates set in the recipe.

By executing the step S2 in this way, the gas G1 is supplied to the droplet dispersion mechanism 11b1 and the gas G2 is supplied to the droplet dispersion mechanism 11b2.

The step S2 is executed prior to the chemical solution supply process shown in the step S6 in anticipation of the time when the temperature adjustment of the gas G0 stabilizes.

Next, in the step of S3, the processing liquid generation mechanism 10B is moved by the nozzle scan mechanism 4 so that the discharge nozzle 13b1 is positioned at the height taught from the upper surface of the semiconductor wafer 1.

The process of S3 is executed under the control of the chamber control unit 102b. The chemical solution cup 3a is moved upward by the cup vertical control 102b3.

At the same time, the nozzle scan control 102b4 controls the vertical movement of the scan shaft 4b and the rotational movement of the scan motor 4c to move the processing liquid generation mechanism 10B fixed to the scan arm 4a above the semiconductor wafer 1. The discharge nozzle 13b1 for discharging the processing liquid MC is positioned at the height taught from the upper surface of the semiconductor wafer 1.

As described above, by executing the step S3, the discharge nozzle is positioned at the height taught from the upper surface of the semiconductor wafer.

Then, in the step of S4, the wafer chuck stage mechanism 2 rotates the wafer stage 2a holding the semiconductor wafer 1 at a set speed which is the speed set in the recipe.

The process of S4 is executed under the control of the chamber control unit 102b. Specifically, the stage rotation control 102b1 controls the rotation of the stage rotation motor 2c to rotate the wafer stage 2a holding the semiconductor wafer 1 at a set speed suitable for the chemical treatment set in the recipe.

Subsequently, in the step of S5, it is confirmed that the temperatures of the gas G1 and the gas G0 for the gas G2 whose temperature has been adjusted by the temperature regulator 25b1 are appropriate. Until the temperature of the gas G0 is within an appropriate temperature range, the process does not proceed to the next step S6.

The process of S5 is executed under the control of the gas control unit 102c. The step S5 is a process required when the temperature regulator 25b1 adjusts the temperature of the gases G1 and G2. The gas control unit 102c can confirm that the temperature of the gas G0 is within the appropriate temperature range set in the recipe by the value of the temperature sensor incorporated in the temperature controller 25b1.

As described above, the step S5 is also executed prior to the chemical solution supply process in the step S6 in the same manner as the step S2, and it is confirmed that the gas G0 temperature is appropriate.

Then, in the step of S6, the chemical solution C1 is supplied from the circulation temperature control supply mechanism 30B toward the droplet dispersion mechanism 11b1, and the chemical solution C2 is supplied from the chemical solution supply mechanism 40B toward the droplet dispersion mechanism 11b2. The temperature of the chemical solution C1 is adjusted by the temperature controller 35b1 so as to have an appropriate temperature.

The step S6 is executed under the control of the first chemical solution control unit 102d and the second chemical solution control unit 102e. The first chemical control unit 102d sets the valve 31b1 to "open", the valve 31b2 to "close", and sets the adjusted flow rate of the flow rate regulator 32b1 to the flow rate for the chemical solution C1 set in the recipe, whereby the gas G1 is released. The chemical solution C1 is supplied to the supplied droplet dispersion mechanism 11b1.

At the same time, the second chemical solution control unit 102e opens the valve 41b1 and sets the adjusted flow rate of the flow rate regulator 42b1 to the flow rate for the chemical solution C2 set in the recipe, so that the droplets to which the gas G2 is supplied are supplied. The chemical solution C2 is supplied to the dispersion mechanism 11b2.

As a result, the first and second droplet formation treatments and the droplet mixing treatments are executed by the treatment liquid generation mechanism 10B.

That is, the gas G1 is supplied to the chemical solution C1 and the chemical solution C1 is dispersed in droplets to obtain the droplet-like chemical solution GC1. A second droplet formation process is executed by the droplet dispersion mechanism 11b2, which supplies and disperses the chemical solution C2 into droplets to obtain the droplet-like chemical solution GC2.

Further, following the first and second droplet formation treatments, the droplet mixing treatment of the droplet-like chemical solution GC1 and the droplet-like chemical solution GC2 by the droplet mixing mechanism 12b1 is executed, and the droplet-like treatment liquid is executed. Get MC.

In the step S7, which proceeds in parallel with the step S6, the treatment liquid MC generated by the first and second droplet formation treatments and the droplet mixing treatment by the treatment liquid generation mechanism 10B is discharged from the discharge nozzle 13b1 to the semiconductor wafer 1. The discharge process of discharging to the upper surface of the is executed.

The process of S7 is executed under the control of the chamber control unit 102b. During the execution period of the step S7, the nozzle scan control 102b4 may position the discharge nozzle 13b1 above the substantially center of the semiconductor wafer 1.

Alternatively, the rotation of the scan motor 4c may be controlled to scan the discharge nozzle 13b1 above the surface of the semiconductor wafer 1. In this case, the processing liquid MC can be evenly and directly supplied to the entire upper surface of the semiconductor wafer 1, and the reactivity of the droplet-shaped processing liquid MC can be made to act more uniformly.

The treatment liquid MC used for the treatment is discharged toward the brackish water separator 5a via the path 3x.

By executing the steps S6 and S7 in this way, the chemical solutions C1 and C2 are supplied to the treatment liquid generation mechanism 10B, and the first and second droplet formation processes are continuously executed with the droplet mixing process. The processing liquid MC is evenly discharged from the discharge nozzle 13b1 onto the upper surface of the semiconductor wafer 1.

Following the step S7, in the step S8, the supply of the chemical solutions C1 and C2 is stopped after the time set in the recipe has elapsed since the supply of the chemical solutions C1 and C2 was started, and the process is terminated.

That is, the processes of the steps S6 and S7 are continuously executed until the time set in the recipe elapses after the start of execution, and then the process of S8 automatically ends.

The step S8 is executed under the control of the first chemical solution control unit 102d and the second chemical solution control unit 102e. After the time set in the above recipe has elapsed, the first chemical control unit 102d opens the valve 31b1 and the valve 31b2 "opens", and the second chemical control unit 102e "closes" the valve 41b1. , And the processing of the process of S6 and the process of S7 is completed.

After that, in the step of S9, the discharge nozzle 13b1 is moved to a standby position away from the semiconductor wafer 1 and positioned at the standby position.

The step S9 is executed under the control of the chamber control unit 102b. Specifically, the cup vertical control 102b3 moves the flush cup 3b upward, and the nozzle scan control 102b4 controls the vertical movement of the scan shaft 4b and the rotation of the scan motor 4c to be fixed to the scan arm 4a. The liquid generation mechanism 10B is moved to the standby position and positioned.

Subsequently, in the step of S10, the supply of the gas G0 to the gas supply mechanism 20B is stopped so that the gases G1 and G2 are not supplied to the treatment liquid generation mechanism 10B.

The process of S10 is executed under the control of the gas control unit 102c. That is, the gas control unit 102c closes the open valve 21b1 or valve 21b2, sets the flow rate regulators 22b1 and the flow rate regulator 22b2 to zero, and stops the supply of the gases G1 and G2.

Then, in the step of S11, the semiconductor wafer 1 is washed with water.

The process of S11 is executed under the control of the chamber control unit 102b and the water washing control unit 102f. The stage rotation control 102b1 controls the rotation of the stage rotation motor 2c to rotate the wafer stage 2a holding the semiconductor wafer 1 at a speed suitable for the water washing process set in the recipe. At the same time, the water washing control unit 102f "opens" the valve 51b1 to supply water W to the semiconductor wafer 1, thereby washing the semiconductor wafer 1 with water.

The water W used for cleaning the semiconductor wafer 1 is discharged toward the steam separator 5a via the path 3y.

After the time set in the recipe has elapsed, the semiconductor wafer 1 is rotated at high speed by the wafer chuck stage mechanism 2 to be dried in the step of S12.

The process of S12 is executed under the control of the chamber control unit 102b and the water washing control unit 102f. The valve 51b1 is "closed" by the water washing control unit 102f, the rotation of the stage rotation motor 2c is controlled by the stage rotation control 102b1, and the wafer stage 2a holding the semiconductor wafer 1 is suitable for the drying process set in the recipe. Rotate at high speed. As a result, the semiconductor wafer 1 can be dried.

After the time set in the recipe has elapsed, the stage rotation control 102b1 stops the rotation of the stage rotation motor 2c to end the drying process, and the cup up / down control 102b3 moves the chemical solution cup 3a and the washing cup 3b downward, which is the origin. It is moved, and the wafer chuck 2b is "opened" by the chuck opening / closing control 102b2 to enter the waiting state.

By the end of the process of S12, a series of processing on the upper surface of the semiconductor wafer 1 is completed, and the completed semiconductor wafer 1 is obtained.

Finally, in the step of S13, the processed semiconductor wafer 1 is taken out from the wafer stage 2a. The semiconductor wafer 1 is taken out by a transfer robot (not shown).

The processed semiconductor wafer 1 is returned to the original slot or stored in another carrier.

After the process of S13 is completed, the processing mechanism 200 can re-execute the steps of S1 to S13 on the semiconductor wafer 1 to be newly manufactured.

As described above, by executing the semiconductor manufacturing method by the semiconductor manufacturing apparatus having the processing mechanism 200 using the treatment liquid generation mechanism 10B, the treatment liquid MC which is densely mixed in the form of droplets and has high reactivity can be obtained. It can be evenly discharged onto the upper surface of the semiconductor wafer 1 to be manufactured. For example, when the processing liquid MC is for resist removal, the highly reactive processing liquid MC having excellent resist removing ability is discharged onto the upper surface of the semiconductor wafer 1, so that the processing time for removing the resist formed on the semiconductor wafer 1 can be increased. Can be shortened.

As a result, when the semiconductor manufacturing method by the processing mechanism 200 includes a resist removing step, the production capacity of the completed semiconductor wafer 1 can be expected to be improved.

<Embodiment 2>
(Basic configuration)
FIG. 6 is an explanatory diagram showing an internal configuration of the treatment liquid generation mechanism 10C of the second embodiment. The treatment solution generation mechanism 10C corresponds to three types of chemical solutions C1 to C3.

The treatment liquid generation mechanism 10C includes a droplet dispersion mechanism 11c1 to a droplet dispersion mechanism 11c3, a droplet mixing mechanism 12c1, a discharge nozzle 13c1 and a joint 14c1 to a joint 14c6 as main components, and has an integrated structure. There is.

The droplet dispersion mechanism 11c1, which is the first droplet dispersion mechanism, supplies the gas G1 which is the first gas to the chemical solution C1 which is the first chemical solution, disperses the chemical solution C1 into the droplets, and first. The first droplet-forming treatment for obtaining the droplet-like chemical solution GC1 which is the droplet-like chemical solution of the above is executed.

Gas G1 is supplied to the inside of the droplet dispersion mechanism 11c1 via the joint 14c1, chemical solution C1 is supplied to the inside of the droplet dispersion mechanism 11c1 via the joint 14c2, and droplets are supplied to the droplet mixing mechanism 12c1 within the above structure. The chemical solution GC1 is supplied.

The droplet dispersion mechanism 11c2, which is the second droplet dispersion mechanism, supplies the gas G2, which is the second gas, to the chemical solution C2, which is the second chemical solution, and disperses the chemical solution C2 into the droplets to obtain the second chemical solution C2. A second droplet-forming process for obtaining the droplet-like chemical solution GC2, which is the droplet-like chemical solution of the above, is executed.

Gas G2 is supplied to the inside of the droplet dispersion mechanism 11c2 via the joint 14c3, chemical solution C2 is supplied to the inside of the droplet dispersion mechanism 11c2 via the joint 14c4, and droplets are supplied to the droplet mixing mechanism 12c1 within the above structure. The chemical solution GC2 is supplied.

The droplet dispersion mechanism 11c3, which is the third droplet dispersion mechanism, supplies the gas G3, which is the third gas, to the chemical solution C3, which is the third chemical solution, and disperses the chemical solution C3 into the droplets to form a third. A third droplet-forming process for obtaining the droplet-like chemical solution GC3, which is the droplet-like chemical solution of the above, is executed.

Gas G3 is supplied to the inside of the droplet dispersion mechanism 11c3 via the joint 14c5, chemical solution C3 is supplied to the inside of the droplet dispersion mechanism 11c3 via the joint 14c6, and droplets are supplied to the droplet mixing mechanism 12c1 within the above structure. The chemical solution GC3 is supplied.

The droplet mixing mechanism 12c1 executes a droplet mixing process of mixing the droplet-shaped chemical solution GC1, the droplet-shaped chemical solution GC2, and the droplet-shaped chemical solution GC3 to obtain the droplet-shaped processing solution MC.

The discharge nozzle 13c1 executes a discharge process of discharging the processing liquid MC received from the droplet mixing mechanism 12c1 to the outside.

In the treatment liquid generation method by the treatment liquid generation mechanism 10C described above, droplet-like treatment liquid MC is generated by executing the droplet mixing treatment in succession to the first to third droplet formation treatments. There is.

As described above, in the treatment liquid generation mechanism 10C of the second embodiment, the droplet-like chemical solutions GC1 to GC3 obtained by the droplet dispersion mechanisms 11c1 to 11c3 are dispersed into fine droplets and ride on the flow of the gases G1 to G3. ing. Therefore, when the droplet mixing process is executed by the droplet mixing mechanism 12c1, the droplet-like chemicals GC1 to GC3 are instantly and densely mixed in a relatively short period of time, and the droplets having a small heat capacity rapidly rise in temperature due to the heat of reaction. To do. That is, since the pipe length from the droplet mixing mechanism 12c1 to the discharge nozzle 13c1 can be made relatively short, it is possible to suppress a decrease in reactivity due to heat dissipation from the pipe. On the other hand, since the generated droplet-shaped processing liquid MC rides on the mixed gas flow, it is insulated by the surrounding gas, and the generated droplet-shaped processing liquid MC has a gas temperature. The heat dissipation is gentle even if it is lower than the temperature of the liquid MC. Therefore, the treatment liquid generation method by the treatment liquid generation mechanism 10C makes it possible to use the droplet-shaped treatment liquid MC in an appropriate condition that maintains a high temperature and secures high reactivity.

Therefore, according to the treatment liquid generation method using the treatment liquid generation mechanism 10C of the second embodiment, the temperature of the gases G1 to G3 to be dispersed in the droplets is higher than the temperature obtained under the treatment conditions while suppressing the decrease in reactivity. The treatment time can be shortened by realizing a treatment liquid generation method that can be set low and ensuring high reactivity of the treatment liquid MC. Further, the semiconductor manufacturing apparatus and the semiconductor manufacturing method using the processing liquid generation mechanism 10C can be expected to have high production capacity.

In the second embodiment, when the treatment liquid MC for removing the resist is generated, the temperature of the chemical liquid C1 at the time of executing the first droplet formation treatment by the droplet dispersion mechanism 11c1 is set to TC1, and the temperature of the gas G1 is set to TG1. The temperature of the chemical solution C2 at the time of executing the second droplet formation treatment by the droplet dispersion mechanism 11c2 is TC2, the temperature of the gas G2 is TG2, and the temperature of the gas G2 is TG2, and the temperature of the third droplet formation treatment by the droplet dispersion mechanism 11c3 is executed. When the temperature of the chemical solution C3 is TC3 and the temperature of the gas G3 is TG3, the condition 1 "TC1 <TG1", the condition 2 "TC2 <TG2", and the condition 3 "TC2 <TG2" are all satisfied.

As described above, the treatment liquid generation mechanism 10C of the second embodiment further has a feature of satisfying all of the conditions 1, 2 and 3. Therefore, it is desirable to provide a temperature regulator corresponding to the temperature regulator 25b1 in the gas supply mechanism 20B of the first embodiment in the supply passages of the gases G1 to G3 of the treatment liquid generation mechanism 10C. In this case, the gas temperature control conditions imposed on the temperature control process of the temperature controller satisfy all of the conditions 1, 2, and 3.

Since the treatment liquid generation mechanism 10C has the above-mentioned characteristics, the droplet-like chemicals GC1, GC2 and GC3 obtained by the first, second and third droplet formation treatments are all the chemical solutions C1, C2 and C3 before droplet formation. It can be set to a higher temperature state than the state of.

As a result, the treatment liquid generation mechanism 10C can execute the droplet mixing treatment by the droplet mixing mechanism 12c1 in a relatively high temperature state, so that the reactivity of the treatment liquid MC can be further improved.

If at least one of the above conditions 1 to 3 is satisfied, the effect of the reactivity of the treatment liquid MC can be exhibited. That is, of the droplet dispersion mechanism 11c1 to the droplet dispersion mechanism 11c3, at least one chemical solution to be processed by at least one droplet dispersion mechanism with respect to at least one droplet dispersion mechanism having a temperature controller in the preceding stage. When the temperature of is TC and the temperature of at least one gas is TG, the gas temperature control condition is that the condition "TC <TG" is satisfied.

As an example of the combination of the chemical solutions C1 to C3, the chemical solution C1 is sulfuric acid (H ₂ SO ₄ ), the chemical solution C2 is hydrogen peroxide solution (H ₂ O ₂ ), and the chemical solution C3 is fluoroacid (HF), and the surface of the semiconductor wafer is used. Treatment to remove organic substances and oxide film in the above to form a new chemical oxide film, chemical solution C1 as sulfuric acid (H ₂ SO ₄ ), chemical solution C2 as nitric acid (HNO3), chemical solution C3 as fluoroacid (HF) There is a process of high-speed etching of Si, which is a semiconductor wafer.

In either case, by utilizing the heat of reaction generated by mixing, the high reactivity of the similarly produced processing liquid can be ensured, the processing time can be shortened, and the production capacity can be expected to be improved. And a semiconductor manufacturing method can be obtained.

<Others>
The particle size of the droplet described in the above-described embodiment is assumed to be about 1 to several hundred μm, but it depends on the gas flow rate, gas flow velocity, pipe length, viscosity, surface tension, and the like. Viscosity and surface tension also vary greatly depending on the mixing ratio of the chemical solution and the temperature.

The treatment solution generation mechanism 10B of the first embodiment described above mixes two kinds of chemical solutions C1 and C2 to generate a treatment solution MC, and the treatment solution generation mechanism 10C of the second embodiment has three kinds of chemical solutions C1 to. C3 is mixed to generate a treatment solution MC.

The combination of chemicals is not limited to the above-mentioned two or three types, and combinations that can utilize the heat of reaction by mixing immediately before the treatment and combinations that can increase the concentration of active species are considered by combining various chemicals. be able to. For example, it is conceivable to combine four or more kinds of chemicals.

That is, various embodiments are conceivable in which the treatment liquid generation mechanism 10B of the first embodiment and the treatment liquid generation mechanism 10C of the second embodiment are expanded to disperse a plurality of chemical solutions into droplets and then mix them. In the above-mentioned various aspects, a plurality of droplet-forming chemicals can be instantly and densely mixed to accumulate reaction heat at once or generate active species, so that appropriate conditions for ensuring high reactivity can be obtained. A satisfactory treatment liquid MC can be produced.

In the present invention, each embodiment can be freely combined, and each embodiment can be appropriately modified or omitted within the scope of the invention. For example, in the treatment mechanism 200 of the first embodiment, the chemical solution may be increased to three types, and the treatment liquid generation mechanism 10C of the second embodiment may be used instead of the treatment liquid generation mechanism 10B of the first embodiment.

2 Wafer chuck stage mechanism, 4 nozzle scanning mechanism, 10A-10C processing liquid generation mechanism, 11a1, 11a2, 11b1, 11b2, 11c1 to 11c3 droplet dispersion mechanism, 12a1, 12b1, 12c1 droplet mixing mechanism, 20B gas supply mechanism, 30B circulation temperature control supply mechanism, 40B chemical solution supply mechanism, 50B water supply mechanism, 200 treatment mechanism.

Claims (9)

The first droplet-forming process of dropletizing the first chemical solution to obtain the first droplet-like chemical solution, and
A second droplet-forming process in which the second chemical solution is dropletized to obtain a second droplet-like chemical solution, and
The present invention comprises at least a droplet mixing treatment in which the first droplet-like chemical solution and the second droplet-like chemical solution are mixed to obtain a droplet-like treatment solution.
Treatment liquid generation method. The treatment liquid generation method according to claim 1.
Further comprising a third dropletization process of dropletizing the third chemical solution to obtain a third droplet-like chemical solution.
The droplet mixing treatment is a process of mixing at least the first droplet-like chemical solution, the second droplet-like chemical solution, and the third droplet-like chemical solution to obtain the droplet-like treatment solution. Including,
Treatment liquid generation method. The treatment liquid generation method according to claim 1 or 2.
By supplying the first gas to the first chemical solution, the first droplet formation treatment is executed.
By supplying the second gas to the second chemical solution, the second droplet formation treatment is executed.
The temperature of the first chemical solution at the time of executing the first droplet formation treatment is TC1, the temperature of the first gas is TG1, and the temperature of the second chemical solution at the time of executing the second droplet formation treatment is TG1. When the temperature of the second gas is TC2 and the temperature of the second gas is TG2, at least one of the condition 1 "TC1 <TG1" and the condition 2 "TC2 <TG2" is satisfied.
Treatment liquid generation method. A first solution that supplies a first gas to the first chemical solution and disperses the first chemical solution into droplets to obtain a first droplet-like chemical solution. Drop dispersion mechanism and
A second liquid for supplying a second gas to the second chemical solution and performing a second dropletization treatment for dispersing the second chemical solution in droplets to obtain a second droplet-like chemical solution. Drop dispersion mechanism and
A droplet mixing mechanism that executes a droplet mixing process of mixing at least the first droplet-like chemical solution and the second droplet-like chemical solution to obtain a droplet-like treatment solution.
A discharge nozzle for executing a discharge process for discharging the treatment liquid received from the droplet mixing mechanism to the outside is provided.
Processing liquid generation mechanism. The treatment liquid generation mechanism according to claim 4.
At least the first and second droplet dispersion mechanisms, the droplet mixing mechanism, and the ejection nozzle are integrally configured.
Processing liquid generation mechanism. The treatment liquid generation mechanism according to claim 4 or 5.
A third liquid that supplies a third gas to the third chemical solution and disperses the third chemical solution into droplets to obtain a third droplet-like chemical solution. With a drop dispersion mechanism
The droplet mixing mechanism mixes at least the first droplet-like chemical solution, the second droplet-like chemical solution, and the third droplet-like chemical solution to obtain the treatment solution in the form of droplets. Perform a drop mixing process,
Processing liquid generation mechanism. The treatment liquid in the form of droplets including the treatment liquid generation mechanism according to any one of claims 4 to 6 and generated by using the treatment liquid generation mechanism is applied to the upper surface of the semiconductor wafer. Equipped with a discharge processing mechanism,
Semiconductor manufacturing equipment. The semiconductor manufacturing apparatus according to claim 7.
The treatment liquid generation mechanism included in the treatment mechanism is
Of the first and second droplet dispersion mechanisms, at least one of the first gas and the second gas, which is provided in front of at least one droplet dispersion mechanism, is heated. Further equipped with at least one temperature controller that performs the temperature control process to satisfy the gas temperature control conditions,
In the at least one droplet dispersion mechanism provided with the at least one temperature controller in the preceding stage, the temperature of the chemical solution to be processed by the at least one droplet dispersion mechanism among the first and second chemical solutions is determined. TC, when the temperature of at least one gas is TG, the gas temperature control condition is that "TC <TG" is satisfied.
Semiconductor manufacturing equipment. A semiconductor manufacturing method performed by using the semiconductor manufacturing apparatus according to claim 7.
The process of mounting a semiconductor wafer on a stage and
A step of supplying the first and second gases to the first and second droplet dispersion mechanisms, and
The process of positioning the discharge nozzle at the height taught from the upper surface of the semiconductor wafer, and
The process of rotating the stage holding the semiconductor wafer at a set speed, and
A step of supplying the first and second chemical solutions to the first and second droplet dispersion mechanisms, and
A step of discharging the treatment liquid obtained by executing the droplet mixing process by the droplet mixing mechanism onto the upper surface of the semiconductor wafer via the discharge nozzle.
The step of stopping the supply of the first and second chemical solutions after the set time has elapsed, and
The process of positioning the discharge nozzle in the standby position and
The step of stopping the supply of the first and second gases and
The step of taking out the semiconductor wafer from the stage is provided.
Semiconductor manufacturing method.

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