JP2020136500A - チャックテーブル - Google Patents
チャックテーブル Download PDFInfo
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- JP2020136500A JP2020136500A JP2019028378A JP2019028378A JP2020136500A JP 2020136500 A JP2020136500 A JP 2020136500A JP 2019028378 A JP2019028378 A JP 2019028378A JP 2019028378 A JP2019028378 A JP 2019028378A JP 2020136500 A JP2020136500 A JP 2020136500A
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- 239000012530 fluid Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 abstract description 3
- 238000005406 washing Methods 0.000 abstract 2
- 238000004891 communication Methods 0.000 abstract 1
- 238000007517 polishing process Methods 0.000 abstract 1
- 239000004575 stone Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
したがって、被加工物を吸引保持する保持面を有するチャックテーブルにおいては、保持面を洗浄砥石で洗浄せずとも、保持面を加工屑が付着していないきれいな状態に維持し、研削加工又は研磨加工でチャックテーブルに保持された被加工物を均一な厚みに形成できるようにするという課題がある。
なお、本発明に係るチャックテーブル3が配設される加工装置は、回転する研磨パッドで被加工物Wを研磨して抗折強度を高めたり被研磨面を鏡面にしたりする研磨装置、又は回転する切削ブレードで被加工物Wを切削する切削装置であってもよい。
図3に示すように、枠体31の上面の環状壁312の外周囲には、周方向に一定の間隔をおいて複数(例えば45度間隔で8つ)のボルト挿通穴313が厚み方向(Z軸方向)に向かって貫通形成されている。
各円環状の溝310cの底には、周方向に均等間隔を空けて溝310cを流体供給源80(図6参照)に連通する供給路314がZ軸方向に貫通形成されている。また、枠体31の中心位置にも、円形状の溝310dを流体供給源80に連通する供給路314が1つZ軸方向に貫通形成されている。
本実施形態における流体供給源80は、例えば、ポンプ等からなる水供給源及びコンプレッサー等からなるエア供給源の少なくとも一方を備えており、流体供給源80が供給することができる流体は、例えば、水とエアとの混合流体である。または、該流体は水である。または、該流体はエアである。
本実施形態においては、図2(B)及び図4に示す逆椀状凹部306は、平面視環状でポーラス板30の回転中心を中心とする同心円状に形成された3本の逆椀状凹部306aと、平面視円形状でポーラス板30の中心に1つ形成された逆椀状凹部306bとからなる。即ち、逆椀状凹部306aは、断面が逆椀状となるようにポーラス板30の反対面30bを環状に切り欠いて形成された溝であり、逆椀状凹部306bは、断面が逆椀状となるようにポーラス板30の反対面30bを略半球状に切り欠いて形成された窪みである。図4に示すように、逆椀状凹部306aは枠体31の複数の環状の溝310cにそれぞれ相対し、逆椀状凹部306bは枠体31の中心に形成された溝310dに相対する。
なお、環状の逆椀状凹部306aの代わりに、環状に平面視円形の逆椀状凹部306bを複数点在させてもよい。
まず、チャックテーブル3の中心と被加工物Wの中心とが略合致するように、被加工物Wが裏面Wbを上に向けた状態で保持面30a上に載置される。また、図6に示すソレノイドバルブ871が吸引源81と配管870とを連通させ、この状態で、図6に示す吸引源81が作動して生み出された吸引力が、ロータリージョイント86、スピンドル330の第二の流路330b、テーブル基台36の第一の流路361、枠体31の供給路314、及び溝310c、310dを通りポーラス板30の保持面30aに伝達されることにより、チャックテーブル3が被加工物Wを裏面Wbが上側を向いた状態で吸引保持する。
厚み測定手段38による厚み測定がなされつつ、所望の厚みまで被加工物Wが研削された後、研削送り手段5が研削手段7を上昇させ被加工物Wから離間させる。
図7に示すソレノイドバルブ871に通電がされ、ソレノイドバルブ871によって流体供給源80と配管870とが連通する。この状態で、流体供給源80が例えば水とエアとの混合流体を送り出し、該混合流体がロータリージョイント86、スピンドル330の第二の流路330b、テーブル基台36の第一の流路361、枠体31の供給路314、及び溝310c、310dに到達し、溝310cの全周に流れていく。さらに、混合流体は、溝310c、310dから、ポーラス板30の反対面30bに形成された断面が逆椀状の逆椀状凹部306a、306bに向かって+Z方向に上昇する。
1:研削装置 10:ベース 11:コラム
3:チャックテーブル
30:ポーラス板 30a:保持面
306:逆椀状凹部 307:マスク部
31:枠体 310:凹部 310a:底面 310c:溝
312:環状壁 313:ボルト挿通穴
33:回転手段 330:スピンドル 331:モータ 332:主動プーリ 333:無端ベルト 334:従動プーリ
36:テーブル基台
39:カバー 39a:蛇腹カバー 38:厚み測定手段
5:研削送り手段 50:ボールネジ 51:ガイドレール 52:モータ 53:昇降板
7:研削手段 70:スピンドル 71:ハウジング 72:モータ 73:マウント
74:研削ホイール 740:研削砥石 75:ホルダ
80:流体供給源 81:吸引源 86:ロータリージョイント 870:配管 871:ソレノイドバルブ
Claims (2)
- 被加工物を吸引保持する保持面を有するチャックテーブルであって、
該保持面を有するポーラス板と、
該保持面を露出させ該ポーラス板を収容する凹部を備えた枠体と、
該枠体の該凹部の底面に形成される溝と、該溝を流体供給源に連通する供給路と、を備え、
さらに、該ポーラス板は、該凹部に収容された際に該溝に対応するように該保持面の反対面に形成され断面が逆椀状の逆椀状凹部を、備え、
該溝を該流体供給源に連通させ該逆椀状凹部に供給された流体が該逆椀状凹部から放射状に該保持面に向かって流れ、該保持面から流体を噴出させるチャックテーブル。 - 前記逆椀状凹部の最も凹んだところを中心に所定の範囲をマスクするマスク部を備えた請求項1記載のチャックテーブル。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019028378A JP7295653B2 (ja) | 2019-02-20 | 2019-02-20 | チャックテーブル |
KR1020200006418A KR102717934B1 (ko) | 2019-02-20 | 2020-01-17 | 척 테이블 |
CN202010095934.3A CN111599739A (zh) | 2019-02-20 | 2020-02-17 | 卡盘工作台 |
TW109105008A TWI829865B (zh) | 2019-02-20 | 2020-02-17 | 卡盤台 |
Applications Claiming Priority (1)
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JP2019028378A JP7295653B2 (ja) | 2019-02-20 | 2019-02-20 | チャックテーブル |
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JP2020136500A true JP2020136500A (ja) | 2020-08-31 |
JP7295653B2 JP7295653B2 (ja) | 2023-06-21 |
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JP2019028378A Active JP7295653B2 (ja) | 2019-02-20 | 2019-02-20 | チャックテーブル |
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JP (1) | JP7295653B2 (ja) |
KR (1) | KR102717934B1 (ja) |
CN (1) | CN111599739A (ja) |
TW (1) | TWI829865B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113770913B (zh) * | 2021-10-28 | 2022-11-04 | 华海清科股份有限公司 | 一种吸盘转台和加工系统 |
JP2023101194A (ja) * | 2022-01-07 | 2023-07-20 | 日本碍子株式会社 | 半導体製造装置用部材 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009113145A (ja) * | 2007-11-06 | 2009-05-28 | Disco Abrasive Syst Ltd | 研磨装置のチャックテーブル機構 |
JP2012135838A (ja) * | 2010-12-27 | 2012-07-19 | Kyocera Corp | 載置用部材 |
JP2014200888A (ja) * | 2013-04-05 | 2014-10-27 | ローム株式会社 | 吸引保持装置およびウエハ研磨装置 |
JP2018113353A (ja) * | 2017-01-12 | 2018-07-19 | 株式会社ディスコ | 保持テーブルの検査方法と検査装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001105305A (ja) | 1999-10-05 | 2001-04-17 | Okamoto Machine Tool Works Ltd | 研磨装置における基板キャリアのヘッド構造 |
TW556619U (en) * | 2003-02-17 | 2003-10-01 | Hotshine Prec Machine Co Ltd | Improved vacuum absorbing table board |
CN100467210C (zh) * | 2004-03-25 | 2009-03-11 | 揖斐电株式会社 | 真空卡盘和吸附板 |
JP6161463B2 (ja) | 2013-08-06 | 2017-07-12 | 株式会社ディスコ | 異物除去工具及び異物除去方法 |
-
2019
- 2019-02-20 JP JP2019028378A patent/JP7295653B2/ja active Active
-
2020
- 2020-01-17 KR KR1020200006418A patent/KR102717934B1/ko active IP Right Grant
- 2020-02-17 CN CN202010095934.3A patent/CN111599739A/zh active Pending
- 2020-02-17 TW TW109105008A patent/TWI829865B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009113145A (ja) * | 2007-11-06 | 2009-05-28 | Disco Abrasive Syst Ltd | 研磨装置のチャックテーブル機構 |
JP2012135838A (ja) * | 2010-12-27 | 2012-07-19 | Kyocera Corp | 載置用部材 |
JP2014200888A (ja) * | 2013-04-05 | 2014-10-27 | ローム株式会社 | 吸引保持装置およびウエハ研磨装置 |
JP2018113353A (ja) * | 2017-01-12 | 2018-07-19 | 株式会社ディスコ | 保持テーブルの検査方法と検査装置 |
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Publication number | Publication date |
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KR102717934B1 (ko) | 2024-10-15 |
CN111599739A (zh) | 2020-08-28 |
JP7295653B2 (ja) | 2023-06-21 |
TWI829865B (zh) | 2024-01-21 |
TW202031423A (zh) | 2020-09-01 |
KR20200101835A (ko) | 2020-08-28 |
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