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JP2020122811A - Projection exposure device, and light shield used for projection exposure device - Google Patents

Projection exposure device, and light shield used for projection exposure device Download PDF

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JP2020122811A
JP2020122811A JP2019012769A JP2019012769A JP2020122811A JP 2020122811 A JP2020122811 A JP 2020122811A JP 2019012769 A JP2019012769 A JP 2019012769A JP 2019012769 A JP2019012769 A JP 2019012769A JP 2020122811 A JP2020122811 A JP 2020122811A
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light
shielding plate
light shielding
optical system
projection exposure
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JP7179420B2 (en
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裕樹 六川
Yuki Mutsukawa
裕樹 六川
耕平 山部
Kohei Yamabe
耕平 山部
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Orc Manufacturing Co Ltd
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Orc Manufacturing Co Ltd
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Priority to TW108130422A priority patent/TWI799637B/en
Priority to KR1020190107209A priority patent/KR102651377B1/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70141Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

To perform properly exposure of a wafer having orientation flat.SOLUTION: A projection exposure device for exposing a substrate on which an orientation flat part is formed, includes an illumination optical system for uniformizing illuminance of outgoing light from a light source and irradiating it to reticle, a light shield provided in the illumination optical system, and a light shield moving mechanism for moving the light shield. In the projection exposure device, the light shield has a continuous edge comprising a straight line part and a curve part, and a position of the light shield is controlled by the light shield moving mechanism corresponding to a relative positional relation between the orientation flat part and a projection range.SELECTED DRAWING: Figure 2

Description

本発明は、ステップアンドリピートによってウエハにパターンを露光する投影露光装置及び投影露光装置に使用する遮光板に関するものである。 The present invention relates to a projection exposure apparatus that exposes a pattern on a wafer by step-and-repeat and a light-shielding plate used in the projection exposure apparatus.

投影露光装置には、露光エリアがウエハエッジにかかる際にエッジ端から所定の幅を露光しない機構(WEM:ウエハエッジマスキング)が設けられている。高精度な露光結果を要求される投影露光装置では、パーティクル対策や遮光境界の鮮明さなどの理由で、光学系中にWEMを設ける方法が選択される。 The projection exposure apparatus is provided with a mechanism (WEM: wafer edge masking) that does not expose a predetermined width from the edge edge when the exposure area reaches the wafer edge. In a projection exposure apparatus that requires a highly accurate exposure result, a method of providing a WEM in an optical system is selected because of measures against particles and sharpness of light-shielding boundaries.

例えば、照明光学系のレチクルと共役な位置に移動可能な遮光板を設け、露光位置に応じて遮光板を移動させ所定部分の光を遮ることでウエハ周辺非露光を行う先行技術(特許文献1)が存在する。半導体ウエハには、ウエハの結晶軸の方向を示すために、オリフラ(OrientationFlat)が設けられているものがある。オリフラは、例えばウエハの一部を切り欠くことで形成された直線エッジ部分(以下ではこの部分をオリフラ部と称する)である。特許文献1の技術ではこのオリフラ部の遮光ができなかった。 For example, a prior art in which a wafer periphery non-exposure is performed by providing a movable light shield plate at a position conjugate with a reticle of an illumination optical system, and moving the light shield plate according to an exposure position to block a predetermined portion of light (Patent Document 1) ) Exists. Some semiconductor wafers are provided with an orientation flat to indicate the direction of the crystal axis of the wafer. The orientation flat is, for example, a straight edge portion formed by cutting out a part of the wafer (hereinafter, this portion is referred to as an orientation flat portion). The technique of Patent Document 1 could not shield the orientation flat portion.

また、ウエハ上に遮光部材を設ける技術が知られている。ウエハ上にウエハ全周をカバーする遮光部材を設ける方法において、ウエハの円弧状の周縁部分とオリフラ部とを同時に遮光することが特許文献2(図8)に記載されている。 Further, a technique of providing a light shielding member on the wafer is known. In a method of providing a light-shielding member that covers the entire circumference of the wafer on the wafer, Patent Document 2 (FIG. 8) describes that the arc-shaped peripheral portion of the wafer and the orientation flat portion are shielded simultaneously.

特開2011−233781号公報JP, 2011-233781, A 特開2015−200910号公報JP, 2005-200910, A

ウエハ上で遮光するWEMは、ウエハ上に遮光部材を設けるため、ウエハに遮光部材由来のパーティクルが付着したり、遮光した境界が不鮮明となるといった問題が生じた。また、オリフラがないウエハを露光する際には、直線部のない遮光部材(先行文献2の図3)に交換する必要があり、作業が煩雑であった。 Since the WEM that shields light on the wafer has a light-shielding member provided on the wafer, there arise problems that particles originating from the light-shielding member adhere to the wafer and the shaded boundary becomes unclear. Further, when exposing a wafer having no orientation flat, it is necessary to replace it with a light-shielding member having no straight line portion (FIG. 3 of the prior art document 2), which makes the work complicated.

したがって、本発明の目的は、ウエハの周辺非露光を行う際に円弧状部のみならずオリフラ部も非露光にすることが可能な、照明光学系に設けられたWEMを備える投影露光装置及び投影露光装置に使用する遮光板を提供することにある。 Therefore, an object of the present invention is to provide a projection exposure apparatus and a projection exposure apparatus including a WEM provided in an illumination optical system, which is capable of not exposing not only an arcuate portion but also an orientation flat portion when performing peripheral non-exposure of a wafer. An object of the present invention is to provide a light shielding plate used in an exposure apparatus.

本発明は、光源の出射光の照度を均一化してレチクルに照射する照明光学系と、
照明光学系に設けられた遮光板と、
遮光板を移動させる遮光板移動機構とを備え、
オリフラ部が形成された基板を露光する投影露光装置において、
遮光板は、直線部と曲線部とからなる連続エッジを有し、
オリフラ部及び投影範囲の相対的位置関係に応じて遮光板移動機構によって遮光板の位置を制御するようにした投影露光装置である。
また、本発明は、投影露光装置の照明光学系に配される遮光板であって、
オリフラ部を有するウエハに対して非露光領域を形成するように、直線部と曲線部とからなる連続エッジを有する遮光板である。
さらに、本発明は、光源の出射光の照度を均一化してレチクルに照射する照明光学系と
照明光学系に設けられた遮光板と、
遮光板を移動させる遮光板移動機構とを備え、
遮光板移動機構は、照明光学系の光軸に対して遮光板を出入りさせる直動機構と、照明光学系の光軸を中心に遮光板を回転させる第1θ軸機構と、直動機構に対して遮光板を回転させる第2θ軸機構を有し、
遮光板は、直線部と曲線部とからなる連続エッジを有し、
基板のオリフラ部及び投影範囲の相対的位置関係に応じて遮光板移動機構によって遮光板の位置を制御するようにした投影露光装置である。
The present invention provides an illumination optical system that uniformizes the illuminance of light emitted from a light source and irradiates a reticle with the illumination optical system.
A light shield provided in the illumination optical system,
A light shielding plate moving mechanism for moving the light shielding plate,
In a projection exposure apparatus that exposes a substrate on which an orientation flat portion is formed,
The light shielding plate has a continuous edge composed of a straight line portion and a curved portion,
This is a projection exposure apparatus in which the position of the light shielding plate is controlled by a light shielding plate moving mechanism according to the relative positional relationship between the orientation flat portion and the projection range.
Further, the present invention is a light-shielding plate arranged in an illumination optical system of a projection exposure apparatus,
It is a light shielding plate having a continuous edge composed of a straight line portion and a curved portion so as to form a non-exposure region for a wafer having an orientation flat portion.
Furthermore, the present invention provides an illumination optical system that uniformizes the illuminance of the light emitted from the light source and irradiates the reticle, and a light shielding plate provided in the illumination optical system,
And a light blocking plate moving mechanism for moving the light blocking plate,
The light blocking plate moving mechanism includes a linear movement mechanism that moves the light blocking plate in and out of the optical axis of the illumination optical system, a first θ-axis mechanism that rotates the light blocking plate around the optical axis of the illumination optical system, and a linear movement mechanism. Has a second θ-axis mechanism that rotates the light shield by
The light shielding plate has a continuous edge composed of a straight line portion and a curved portion,
This is a projection exposure apparatus in which the position of the light shielding plate is controlled by a light shielding plate moving mechanism according to the relative positional relationship between the orientation flat portion of the substrate and the projection range.

少なくとも一つの実施形態によれば、ウエハの周辺非露光を行う際に、円弧状部のみならずオリフラ部も非露光にすることができる。なお、ここに記載された効果は必ずしも限定されるものではなく、本明細書に記載されたいずれかの効果又はそれらと異質な効果であっても良い。 According to at least one embodiment, not only the arc-shaped portion but also the orientation flat portion can be made non-exposure when the peripheral non-exposure of the wafer is performed. Note that the effects described here are not necessarily limited, and may be any one of the effects described in this specification or an effect different from them.

図1は、本発明の一実施形態に係る露光装置の構成を示す図である。FIG. 1 is a diagram showing the configuration of an exposure apparatus according to an embodiment of the present invention. 図2は、一実施の形態における遮光板の一例の正面図である。FIG. 2 is a front view of an example of the light shielding plate according to the embodiment. 図3は、一実施の形態における遮光板の他の例の正面図である。FIG. 3 is a front view of another example of the light shielding plate according to the embodiment. 図4は、一実施の形態における遮光板のさらに他の例の正面図である。FIG. 4 is a front view of still another example of the light shielding plate according to the embodiment. 図5は、一実施の形態における遮光板移動機構を正面図である。FIG. 5 is a front view of the light shielding plate moving mechanism according to the embodiment. 図6は、一実施の形態における遮光板移動機構の断面図である。FIG. 6 is a cross-sectional view of the light shielding plate moving mechanism according to the embodiment. 図7は、露光動作の説明に使用する平面図である。FIG. 7 is a plan view used for explaining the exposure operation. 図8は、ウエハと遮光板の関係を示す平面図である。FIG. 8 is a plan view showing the relationship between the wafer and the light shielding plate.

以下、本発明の実施形態等について図面を参照しながら説明する。なお、以下に説明する実施の形態等は本発明の好適な具体例であり、本発明の内容がこれらの実施形態等に限定されるものではない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the embodiments and the like described below are preferred specific examples of the present invention, and the contents of the present invention are not limited to these embodiments and the like.

図1は本発明の投影露光装置の一実施の形態の概略構成図である。なお、図1の各要素は、主要な光軸に沿った断面図で表示されており、その際のハッチングは省略されている。投影露光装置は、光源1と、光源1の出射光を均一な照度の照明光とする照明光学系4を有する。照明光学系4からの照明光がパターンの原版であるレチクル(フォトマスク)8に照射される。レチクル8の像が投影光学系12によってウエハ13に投影される。 FIG. 1 is a schematic configuration diagram of an embodiment of a projection exposure apparatus of the present invention. Note that each element in FIG. 1 is shown in a sectional view along the main optical axis, and hatching at that time is omitted. The projection exposure apparatus has a light source 1 and an illumination optical system 4 that makes the light emitted from the light source 1 illumination light of uniform illuminance. Illumination light from the illumination optical system 4 is applied to the reticle (photomask) 8 which is the original plate of the pattern. The image of the reticle 8 is projected onto the wafer 13 by the projection optical system 12.

ウエハ13は、露光ステージ(ワークチャック)14上に載置されている。露光ステージ14は、ステージ移動機構15によって移動される。ステージ移動機構15及び光学系(光源1、照明光学系4、投影光学系12)が架台16によって支持される。 The wafer 13 is placed on an exposure stage (workpiece chuck) 14. The exposure stage 14 is moved by the stage moving mechanism 15. The stage moving mechanism 15 and the optical system (the light source 1, the illumination optical system 4, the projection optical system 12) are supported by the mount 16.

光源1は、例えばUVランプである。また、楕円ミラー2が設けられており、ロッドレンズの入口に向けて光を集光する。ロッドレンズ5は、ロッドレンズ支持部6によって支持されている。光源1として水銀ランプ、レーザなどを使用してもよい。 The light source 1 is, for example, a UV lamp. Further, an elliptical mirror 2 is provided, and collects light toward the entrance of the rod lens. The rod lens 5 is supported by the rod lens support portion 6. A mercury lamp, a laser or the like may be used as the light source 1.

照明光学系4は、ロッドレンズ5と、クリティカル照明レンズ群7を備える。ロッドレンズ5は、多角形の断面を有する透明体であり、照明光均一化手段として機能する。照明光均一化手段としては、ロッドレンズに限らず、内面反射鏡(複数の鏡を内向きに貼り合せたような多角形の筒)を使用してもよい。 The illumination optical system 4 includes a rod lens 5 and a critical illumination lens group 7. The rod lens 5 is a transparent body having a polygonal cross section and functions as an illumination light uniformizing means. The illumination light uniformizing means is not limited to the rod lens, but may be an internal reflection mirror (a polygonal tube in which a plurality of mirrors are stuck inward).

クリティカル照明レンズ群7は、ロッドレンズ5の出口面の像を所定の倍率(例えば2倍)で拡大してレチクル8に照射する。なお、図ではクリティカル照明レンズ群7を四角形で省略しているが、複数のレンズ(例えば10枚のレンズ)で構成されている。また、照明光学系4は、後述する遮光機構(WEM)11を備えている。 The critical illumination lens group 7 magnifies the image of the exit surface of the rod lens 5 at a predetermined magnification (for example, 2 times) and irradiates the reticle 8 with the magnified image. In addition, although the critical illumination lens group 7 is not shown as a quadrangle in the drawing, it is composed of a plurality of lenses (for example, 10 lenses). Further, the illumination optical system 4 includes a light blocking mechanism (WEM) 11 described later.

レチクル8は、所定のパターンが描画された透過型のフォトマスクである。レチクル8はレチクルステージ9によって支持されている。レチクル8は、例えば石英ガラス製のもので、転写されるべき所定のパターン(例えば回路パターン)が描画された透過型のフォトマスクである。 The reticle 8 is a transmissive photomask on which a predetermined pattern is drawn. The reticle 8 is supported by the reticle stage 9. The reticle 8 is made of quartz glass, for example, and is a transmissive photomask on which a predetermined pattern (for example, a circuit pattern) to be transferred is drawn.

投影光学系12は、例えばダイソン光学系である。一実施の形態では、投影光学系12の倍率は等倍である。 The projection optical system 12 is, for example, a Dyson optical system. In one embodiment, the magnification of the projection optical system 12 is unity.

ウエハ13の形状は円形で、直径は例えば300mmである。また、オリフラが形成されている。ウエハ13は、例えば単結晶シリコンの表面上にフォトレジスト(感光剤)が塗布されたシリコンウエハである。単結晶シリコン製のもの以外にも、ガラス、サファイヤ、又は化合物からなる場合もある。 The wafer 13 has a circular shape and a diameter of 300 mm, for example. Also, orientation flats are formed. The wafer 13 is, for example, a silicon wafer in which a photoresist (photosensitive agent) is applied on the surface of single crystal silicon. In addition to the one made of single crystal silicon, it may be made of glass, sapphire, or a compound.

パターン露光領域のみならず、ウエハ13の周辺部の少なくとも一部にもフォトレジストが塗布されている。フォトレジストは、紫外線を用いてパターンを形成する感光材料である。フォトレジストとしては、ポジ型、ネガ型のいずれであってもよい。ウエハ13の周辺部には所定の非露光領域が設定されている。例えばウエハ13のエッジ全周にわたって幅5mmが非露光領域とされる。なお、非露光領域はオリフラ部にも設けられている。 The photoresist is applied not only to the pattern exposure area but also to at least a part of the peripheral portion of the wafer 13. Photoresist is a photosensitive material that forms a pattern using ultraviolet rays. The photoresist may be either a positive type or a negative type. A predetermined non-exposure region is set in the peripheral portion of the wafer 13. For example, the non-exposure region has a width of 5 mm over the entire circumference of the edge of the wafer 13. The non-exposure area is also provided in the orientation flat portion.

露光ステージ14がウエハ13を吸着保持する。露光ステージ14がステージ移動機構15によって、X,Y,θ方向に移動される。ウエハ13の表面(二次元平面)をX方向及びY方向で規定し、回転方向をθで規定する。ステージ移動機構15は、ステップ露光のための移動と、ウエハアライメントの微小な移動とを行なう。また、ウエハ13の焦点合わせのため、Z方向の移動及び露光ステージの傾き調整を行う機構を備える。 The exposure stage 14 sucks and holds the wafer 13. The exposure stage 14 is moved in the X, Y, and θ directions by the stage moving mechanism 15. The surface (two-dimensional plane) of the wafer 13 is defined by the X direction and the Y direction, and the rotation direction is defined by θ. The stage moving mechanism 15 performs movement for step exposure and minute movement for wafer alignment. Further, for focusing the wafer 13, a mechanism for moving in the Z direction and adjusting the tilt of the exposure stage is provided.

投影露光装置は、露光ステージ14と光学系を設置するための架台16を備える。アライメントカメラ10が架台16に取り付けられている。 The projection exposure apparatus includes an exposure stage 14 and a mount 16 for installing an optical system. The alignment camera 10 is attached to the mount 16.

一実施の形態では、照明光学系4のウエハ13の共役面に遮光板17が設置されている。また、遮光板17はロッドレンズ5の出口部に位置する。具体的には、遮光板17に近接した位置にロッドレンズ5の出口面が位置するようになされる。 In one embodiment, the light shielding plate 17 is installed on the conjugate surface of the wafer 13 of the illumination optical system 4. Further, the light blocking plate 17 is located at the exit of the rod lens 5. Specifically, the exit surface of the rod lens 5 is located near the light shield plate 17.

図2はウエハ13の周辺非露光領域に沿って光を遮光するための遮光板17の一例を示す。遮光板17は、レチクル8と同様の材質例えば石英ガラスの板に対して黒色の遮光剤を被着させたものである。後述するように、光軸に対して遮光板を出入りさせる直動機構と、照明光学系の光軸を中心に遮光板を回転させる第1θ軸機構と、直動機構に対して遮光板を回転させる第2θ軸機構を備える遮光板移動機構が設けられている。 FIG. 2 shows an example of a light blocking plate 17 for blocking light along the peripheral non-exposed region of the wafer 13. The light blocking plate 17 is made of a material similar to that of the reticle 8, for example, a quartz glass plate, and a black light blocking agent applied thereto. As will be described later, a linear movement mechanism that moves the light shielding plate in and out of the optical axis, a first θ-axis mechanism that rotates the light shielding plate around the optical axis of the illumination optical system, and a light shielding plate that rotates with respect to the linear movement mechanism. A light shielding plate moving mechanism including a second θ-axis mechanism is provided.

遮光板17は、第2θ軸機構の逃げとなる半円状切欠き18を内周側の中心部分に有する。外周側が切欠き18に沿って全体的に山形あるいは凸型をしている。遮光板17は、外周側に、第1の遮光部19a、第2の遮光部19b及び第3の遮光部19cを有する。図に向かって左側の頂点a1から右側のより上側の頂点a2に向かって曲線状エッジc1が形成され、頂点a2から右側のより上側の頂点a3に向かって直線状エッジs1が形成される。これらの曲線状エッジc1及び直線状エッジs1からなる連続エッジによって第1の遮光部19aが構成される。 The light-shielding plate 17 has a semicircular cutout 18 that serves as a relief for the second θ-axis mechanism in the center portion on the inner peripheral side. The outer peripheral side is generally mountain-shaped or convex along the notch 18. The light shielding plate 17 has a first light shielding portion 19a, a second light shielding portion 19b, and a third light shielding portion 19c on the outer peripheral side. A curved edge c1 is formed from the apex a1 on the left side to the upper apex a2 on the right side in the drawing, and a linear edge s1 is formed from the apex a2 to the upper apex a3 on the right side. The first light-shielding portion 19a is configured by a continuous edge composed of the curved edge c1 and the straight edge s1.

頂点a3と頂点b3がほぼ同じ高さ位置とされ、これらの頂点a3及びb3を結ぶ曲線状エッジc3によって第3の遮光部19cが構成される。さらに、頂点b3から右側に下降した位置の頂点b2に向かって直線状エッジs2が形成され、頂点b2から右側のより低い位置の頂点b1に向かって曲線状エッジc2が形成される。これらの曲線状エッジc2及び直線状エッジs2によって第2の遮光部19bが構成される。ウエハ13上において、直線状エッジs1及びs2のそれぞれの長さは、1個の露光範囲の長手方向の長さより長いものとされる。なお、ここでの露光範囲とは、1回の露光ショットでウエハ13上
に露光可能な最大の投影像を示し、例えばロッドレンズ5の出口面の像を、クリティカルレンズ系7と投影光学系12の倍率に従って拡大(または縮小)した形状で表される。
The apex a3 and the apex b3 are at substantially the same height position, and the curved edge c3 connecting these apices a3 and b3 constitutes the third light shielding portion 19c. Further, a straight edge s2 is formed from the vertex b3 toward the vertex b2 that is located on the right side, and a curved edge c2 is formed from the vertex b2 toward the lower vertex on the right side b1. The curved edge c2 and the straight edge s2 form the second light shielding portion 19b. On the wafer 13, the length of each of the linear edges s1 and s2 is longer than the length of one exposure range in the longitudinal direction. Note that the exposure range here refers to the maximum projected image that can be exposed on the wafer 13 in one exposure shot. For example, the image of the exit surface of the rod lens 5 can be defined as the critical lens system 7 and the projection optical system 12. It is represented by a shape enlarged (or reduced) according to the magnification of.

このように、遮光板17は、半円状切欠き18の中心を通って上下に伸びる線に対して左右対象の形状を有している。第1の遮光部19aは、オリフラ部と、この直線エッジ部分に連続する一方の曲線部に対する遮光の機能を有し、第2の遮光部19bは、オリフラ部と、このオリフラ部に連続する他方の曲線部に対する遮光の機能を有し、第3の遮光部19cがオリフラ部以外の遮光の機能を有する。また、各遮光部のエッジ部分は、照明光学系のNAに応じたテーパ形状の断面を有する。テーパ形状は、非露光領域以外では出射光の光量の減少を防止するためである。 As described above, the light shielding plate 17 has a shape symmetrical with respect to a line extending vertically through the center of the semicircular cutout 18. The first light shielding portion 19a has a function of shielding the orientation flat portion and one curved portion that is continuous with the straight edge portion, and the second light shielding portion 19b is the orientation flat portion and the other that is continuous with the orientation flat portion. Has a light-shielding function for the curved portion, and the third light-shielding portion 19c has a light-shielding function other than the orientation flat portion. The edge portion of each light shielding portion has a tapered cross section according to the NA of the illumination optical system. The taper shape is for preventing a decrease in the amount of emitted light in areas other than the non-exposed area.

図3は、遮光板17の変形例としての遮光板17Aを示す。図2と対応する部分には、同一の参照符号を付加する。この遮光板17Aは、第1の遮光部19aaと第2の遮光部19abを有し、第3の遮光部19cを省略した構成である。この遮光板17Aの場合、オリフラ部以外の遮光は、第1の遮光部19aaの曲線状エッジc1及び第2の遮光部19abの曲線状エッジc2によってなされる。 FIG. 3 shows a light blocking plate 17A as a modified example of the light blocking plate 17. The same reference numerals are added to the portions corresponding to those in FIG. The light shielding plate 17A has a first light shielding portion 19aa and a second light shielding portion 19ab, and has a configuration in which the third light shielding portion 19c is omitted. In the case of this light shielding plate 17A, light shielding other than the orientation flat portion is performed by the curved edge c1 of the first light shielding portion 19aa and the curved edge c2 of the second light shielding portion 19ab.

図4は、遮光板17の変形例としての遮光板17Bを示す。遮光板17Bは、遮光板17と異なり、外周側が切欠き18とは逆に全体的に谷形あるいは凹型をしている。図に向かって左側の頂点d1から右下がりに曲線状エッジc4が頂点d2まで形成される。頂点d2がオリフラ部と対応する直線状エッジs3通じて頂点d3に至る。さらに、頂点d3
から右上がりに曲線状エッジc5が頂点d4まで形成される。
FIG. 4 shows a shading plate 17B as a modified example of the shading plate 17. Unlike the light shielding plate 17, the light shielding plate 17B has a valley shape or a concave shape as a whole on the outer peripheral side as opposed to the notch 18. A curved edge c4 is formed from the apex d1 on the left side toward the apex toward the apex to the apex d2. The vertex d2 reaches the vertex d3 through the straight edge s3 corresponding to the orientation flat portion. Furthermore, the vertex d3
A curved edge c5 is formed to the apex d4 in an upward direction.

遮光板17Bは、曲線状エッジc4及び直線状エッジs3によって第1の遮光部19baを構成し、曲線状エッジc5及び直線状エッジs3によって第2の遮光部19bbを構成する。これらの遮光部19ba及び19bbによってオリフラ部と、オリフラ部に連続する曲線部分の遮光がなされる。さらに、オリフラ部と、オリフラ部に連続する曲線部分以外の曲線部分の遮光は、曲線状エッジc4及びc5によって行なわれる。 In the light shield plate 17B, the curved edge c4 and the straight edge s3 configure a first light shield portion 19ba, and the curved edge c5 and the straight edge s3 configure a second light shield portion 19bb. The light shielding portions 19ba and 19bb shield the orientation flat portion and a curved portion continuous to the orientation flat portion. Further, the light blocking of the orientation flat portion and the curved portion other than the curved portion continuous to the orientation flat portion is performed by the curved edges c4 and c5.

図5及び図6は、例えば遮光板17を移動させる遮光板移動機構の正面図及び側面断面図である。図6に示すように、ロッドレンズ側面と隣接するようにして遮光板移動機構が設けられている。遮光板移動機構は中空構造となっており、中空部内にロッドレンズ支持部が設置される。遮光板移動機構は、光軸に対して遮光板を出入りさせる直動機構23と、照明光学系の光軸を中心に遮光板を回転させる第1θ軸機構と、直動機構23に対して遮光板17を回転させる第2θ軸機構を備える。 5 and 6 are a front view and a side sectional view of a light blocking plate moving mechanism that moves the light blocking plate 17, for example. As shown in FIG. 6, a light blocking plate moving mechanism is provided so as to be adjacent to the side surface of the rod lens. The light shielding plate moving mechanism has a hollow structure, and the rod lens support portion is installed in the hollow portion. The light-shielding plate moving mechanism includes a linear movement mechanism 23 that moves the light-shielding plate in and out of the optical axis, a first θ-axis mechanism that rotates the light-shielding plate around the optical axis of the illumination optical system, and a light-shielding mechanism 23 A second θ-axis mechanism that rotates the plate 17 is provided.

図5に示すように、遮光板17の内側の円弧状切欠き18の円弧が遮光板回転モータ20の回転軸に取り付けられている。遮光板回転モータ20がベースプレート21に対して固定されている。ベースプレート21が着脱用ネジ22a及び22bによって直動機構23に対して装着される。なお、遮光板回転モータ20は、直動機構23に対して遮光板17を回転させるためのもので、第2θ軸機構を構成する。 As shown in FIG. 5, the arc of the arcuate cutout 18 inside the light shield 17 is attached to the rotary shaft of the light shield rotation motor 20. The light shielding plate rotation motor 20 is fixed to the base plate 21. The base plate 21 is attached to the linear motion mechanism 23 by the attachment and detachment screws 22a and 22b. The light shield plate rotation motor 20 is for rotating the light shield plate 17 with respect to the linear motion mechanism 23, and constitutes a second θ-axis mechanism.

直動機構23は、ボールネジ等の単軸アクチュエータであり、遮光板17及び遮光板回転モータ20を直線的に変位させる機構である。直動機構23によって、照明光学系4の光軸に対して遮光板17のエッジを接近又は離間される。直動機構23は、非露光領域の幅に対応して遮光板17のエッジの位置を設定するものである。 The linear motion mechanism 23 is a single-axis actuator such as a ball screw, and is a mechanism that linearly displaces the light shielding plate 17 and the light shielding plate rotation motor 20. The linear movement mechanism 23 moves the edge of the light shielding plate 17 toward or away from the optical axis of the illumination optical system 4. The linear movement mechanism 23 sets the position of the edge of the light shielding plate 17 according to the width of the non-exposure region.

第1θ軸機構は、照明光学系の光軸を中心にして遮光板17を回転させる回転機構である。図6に示すように、中空モータ24が設けられ、中空モータ24によって中空シャフト25が回転される。中空モータ24は、スリップリング等の回転ケーブル部26を備えている。 The first θ-axis mechanism is a rotating mechanism that rotates the light shielding plate 17 about the optical axis of the illumination optical system. As shown in FIG. 6, a hollow motor 24 is provided, and the hollow shaft 24 is rotated by the hollow motor 24. The hollow motor 24 includes a rotary cable portion 26 such as a slip ring.

中空シャフト25内にロッドレンズ5を有するロッドレンズ支持部6が設置される。例えば中空シャフト25の中心とロッドレンズ5の光軸が一致するようになされる。ロッドレンズ支持部6は、ロッドレンズ5の入口側が筐体に固定され、出口側は中空シャフト25内に設けられたベアリング27によって支持される。但し、ベアリング27によってロッドレンズ5の出口側を支持せずに、入口側のみでロッドレンズ5及びロッドレンズ支持部6を支持する片持ち構成であってもよい。 The rod lens support 6 having the rod lens 5 is installed in the hollow shaft 25. For example, the center of the hollow shaft 25 and the optical axis of the rod lens 5 are aligned with each other. The rod lens support portion 6 is fixed to the housing on the inlet side of the rod lens 5, and is supported on the outlet side by a bearing 27 provided in the hollow shaft 25. However, a cantilever structure may be used in which the rod lens 5 and the rod lens support portion 6 are supported only on the inlet side without supporting the outlet side of the rod lens 5 by the bearing 27.

中空シャフト25のロッドレンズ5の出口側に回転ステージ28が取り付けられている。回転ステージ28は、円板状でその中心位置に中空シャフト25の先端が固着される。回転ステージ28には、取付部を介して直動機構23が取り付けられている。例えば回転ステージ28の径方向と直動機構23の直線運動の方向が一致するようにされている。上述したように、直動機構23に対しては、遮光板17及び遮光板回転モータ20を有する第2θ軸機構が取り付けられている。したがって、中空シャフト25が中空モータ24によって回転されると、照明光学系の光軸を中心として、回転ステージ28、直動機構23、第2θ軸機構及び遮光板17が一体に回転する。 A rotary stage 28 is attached to the hollow shaft 25 on the outlet side of the rod lens 5. The rotary stage 28 has a disk shape, and the tip of the hollow shaft 25 is fixed to the center position thereof. The linear movement mechanism 23 is attached to the rotary stage 28 via an attachment portion. For example, the radial direction of the rotary stage 28 and the direction of the linear movement of the linear motion mechanism 23 are matched. As described above, the second θ-axis mechanism including the light blocking plate 17 and the light blocking plate rotation motor 20 is attached to the linear motion mechanism 23. Therefore, when the hollow shaft 25 is rotated by the hollow motor 24, the rotary stage 28, the linear movement mechanism 23, the second θ-axis mechanism, and the light shielding plate 17 are integrally rotated about the optical axis of the illumination optical system.

なお、本実施形態では照明光均一化手段としてロッドレンズを使用したが、フライアイレンズを用いても良い。その場合は、フライアイレンズの後に結像光学系を設け、結像面に遮光板が来るように遮光板移動機構を設けると良い。 Although the rod lens is used as the illumination light uniformizing means in this embodiment, a fly-eye lens may be used. In that case, an image forming optical system may be provided after the fly-eye lens, and a light shielding plate moving mechanism may be provided so that the light shielding plate comes to the image forming surface.

次に本発明の一実施形態の遮光動作について説明する。図7はウエハ13に対するステップアンドリピート露光動作を示す図である。図7の例では、41回の露光を行う。1回の露光範囲を矩形で示しており、十字は露光の中心(光軸の位置)を表している。 Next, the light blocking operation of the embodiment of the present invention will be described. FIG. 7 is a diagram showing a step-and-repeat exposure operation for the wafer 13. In the example of FIG. 7, exposure is performed 41 times. A single exposure range is shown as a rectangle, and a cross represents the center of exposure (the position of the optical axis).

ウエハ13の外周に沿って非露光領域MAが設定されている。WEMによる遮光の例を左上に示す。露光エリアが非露光領域MAにかからない位置の露光動作の際には、遮光板17がロッドレンズ5から退避する位置に後退している。 A non-exposure area MA is set along the outer circumference of the wafer 13. An example of shading by WEM is shown in the upper left. During the exposure operation at a position where the exposure area does not cover the non-exposure area MA, the light shielding plate 17 is retracted to a position retracted from the rod lens 5.

遮光板移動機構は、オリフラ部の遮光とオリフラ部以外の遮光では異なる動作を行う。最初にオリフラ部以外の非露光領域を遮光する動作を説明する。この場合では、第2θ軸機構(遮光板回転モータ20)は、遮光板17の第3の遮光部19cが直動機構23の移動軸上の中心に来るように回転し、以降はその状態を維持する。 The light-shielding plate moving mechanism performs different operations depending on whether the orientation flat portion is shielded or not. First, the operation of shielding the non-exposure area other than the orientation flat portion will be described. In this case, the second θ-axis mechanism (light-shielding plate rotation motor 20) rotates so that the third light-shielding portion 19c of the light-shielding plate 17 comes to the center on the moving axis of the linear motion mechanism 23, and thereafter, the state is changed. maintain.

露光エリアが非露光領域MAにかかる位置(露光範囲EA1,EA2)においては、遮光板17が非露光領域MAを遮光する分だけロッドレンズ5に向かって前進し、照明光の一部を遮光する。また、EA1、EA2における非露光領域MAの角度に応じて第1θ軸機構が回転する。その結果、遮光領域SAが露光位置(露光範囲EA1,EA2,・・・)と非露光領域MAとに応じて位置決めされる。 At positions (exposure ranges EA1 and EA2) where the exposure area covers the non-exposure area MA, the light blocking plate 17 advances toward the rod lens 5 by the amount of blocking the non-exposure area MA and blocks a part of the illumination light. .. Further, the first θ-axis mechanism rotates according to the angle of the non-exposure area MA in EA1 and EA2. As a result, the light shielding area SA is positioned according to the exposure position (exposure area EA1, EA2,...) And the non-exposure area MA.

次に、オリフラ部の遮光動作について説明する。図8は、WEM(遮光板17)がオリフラ部の非露光領域MAを遮光するイメージを示す図である。なお、図8に示されている遮光板17は、照明光学系と投影光学系の倍率によって拡大されたイメージを表している。 Next, the light shielding operation of the orientation flat portion will be described. FIG. 8 is a diagram showing an image in which the WEM (light shielding plate 17) shields the non-exposure area MA of the orientation flat portion. The shading plate 17 shown in FIG. 8 represents an image enlarged by the magnification of the illumination optical system and the projection optical system.

図7に示すように、オリフラ部の右端部を含む露光範囲EA3を露光する際には、遮光板17の第2の遮光部19bを使用する。すなわち、直線状エッジs2及び曲線状エッジc2の両方を使用して円弧と直線の両方の部分の遮光を同時に行なうようになされる。 As shown in FIG. 7, when exposing the exposure area EA3 including the right end portion of the orientation flat portion, the second light shielding portion 19b of the light shielding plate 17 is used. That is, both the straight edge s2 and the curved edge c2 are used to simultaneously shield light from both the circular arc and the straight line.

露光範囲EA3の非露光領域を遮光するために、第2θ軸機構は、遮光板17の第2の遮光部19bがロッドレンズ5にかかるように回転移動する。このとき第1θ軸機構の角度θ1、直動機構23の距離R、第2θ軸機構の角度θ2を連動させ計算し、遮光板17の第2の遮光部19bがオリフラ部上に適切に位置するように、遮光板17を移動させる。 In order to shield the non-exposure area of the exposure area EA3, the second θ-axis mechanism rotationally moves so that the second light shield portion 19b of the light shield plate 17 is placed on the rod lens 5. At this time, the angle θ1 of the first θ-axis mechanism, the distance R of the linear motion mechanism 23, and the angle θ2 of the second θ-axis mechanism are interlocked and calculated, and the second light-shielding portion 19b of the light-shielding plate 17 is appropriately positioned on the orientation flat portion. Thus, the light shielding plate 17 is moved.

同様に、露光範囲EA5を露光する際には、遮光板17の第1の遮光部19aがオリフラ部上に適切に位置するように、遮光板17を移動させる。さらに、露光範囲EA4を露光する際には、第1の遮光部19a又は第2の遮光部19bを用いて遮光を行なう。このため、第1の遮光部19aの直線状エッジs1及び第2の遮光部19bの直線状エッジs2は、露光範囲EA4の長辺の長さより長いものとされている。 Similarly, when exposing the exposure area EA5, the light shielding plate 17 is moved so that the first light shielding portion 19a of the light shielding plate 17 is appropriately positioned on the orientation flat portion. Further, when the exposure area EA4 is exposed, light is shielded by using the first light shielding portion 19a or the second light shielding portion 19b. Therefore, the linear edge s1 of the first light shielding portion 19a and the linear edge s2 of the second light shielding portion 19b are longer than the length of the long side of the exposure range EA4.

以上、本技術の一実施の形態について具体的に説明したが、本発明は、上述の一実施の形態に限定されるものではなく、本発明の技術的思想に基づく各種の変形が可能である。また、上述の実施形態において挙げた構成、方法、工程、形状、材料及び数値などはあくまでも例に過ぎず、必要に応じてこれと異なる構成、方法、工程、形状、材料及び数値などを用いてもよい。 Although one embodiment of the present technology has been specifically described above, the present invention is not limited to the above-described one embodiment, and various modifications based on the technical idea of the present invention are possible. .. Further, the configurations, methods, steps, shapes, materials, numerical values, etc. mentioned in the above-mentioned embodiments are merely examples, and different configurations, methods, steps, shapes, materials, numerical values, etc. may be used as necessary. Good.

1・・・光源、4・・・照明光学系、5・・・ロッドレンズ、
8・・・レチクル、10・・・アライメントカメラ、11・・・遮光機構、
12・・・投影光学系、13・・・ウエハ、14・・・露光ステージ、
17・・・遮光板、19a・・・第1の遮光部、19b・・・第2の遮光部、
19c・・・第3の遮光部、20・・・遮光板回転モータ、23・・・直動機構、
24・・・中空モータ、28・・・回転ステージ、
c1,c2,c3・・・曲線状エッジ、s1,s2・・・直線状エッジ
1... Light source, 4... Illumination optical system, 5... Rod lens,
8... Reticle, 10... Alignment camera, 11... Shading mechanism,
12... Projection optical system, 13... Wafer, 14... Exposure stage,
17... Shading plate, 19a... 1st shading part, 19b... 2nd shading part,
19c... 3rd light-shielding part, 20... light-shielding plate rotation motor, 23... direct-acting mechanism,
24... Hollow motor, 28... Rotation stage,
c1, c2, c3...curved edge, s1,s2...straight edge

Claims (6)

光源の出射光の照度を均一化してレチクルに照射する照明光学系と、
前記照明光学系に設けられた遮光板と、
前記遮光板を移動させる遮光板移動機構とを備え、
オリフラ部が形成された基板を露光する投影露光装置において、
前記遮光板は、直線部と曲線部とからなる連続エッジを有し、
前記オリフラ部及び投影範囲の相対的位置関係に応じて前記遮光板移動機構によって前記遮光板の位置を制御するようにした投影露光装置。
An illumination optical system that uniformizes the illuminance of the light emitted from the light source and irradiates the reticle.
A light shielding plate provided in the illumination optical system,
A light blocking plate moving mechanism for moving the light blocking plate,
In a projection exposure apparatus that exposes a substrate on which an orientation flat portion is formed,
The light-shielding plate has a continuous edge composed of a straight line portion and a curved portion,
A projection exposure apparatus in which the position of the light shielding plate is controlled by the light shielding plate moving mechanism according to the relative positional relationship between the orientation flat portion and the projection range.
前記ウエハ上における前記直線部の長さが前記投影範囲の長手方向の長さより長いものとされた請求項1に記載の投影露光装置。 The projection exposure apparatus according to claim 1, wherein the length of the linear portion on the wafer is longer than the length of the projection range in the longitudinal direction. 前記遮光板の中心線を対称として、前記連続エッジを2個有する請求項1又は2に記載の投影露光装置。 The projection exposure apparatus according to claim 1, wherein the projection exposure apparatus has two continuous edges with a center line of the light shielding plate being symmetrical. 前記遮光板が前記連続エッジとは異なる曲線状エッジを有する請求項1から3の何れかに記載の投影露光装置。 The projection exposure apparatus according to claim 1, wherein the light shielding plate has a curved edge different from the continuous edge. 投影露光装置の照明光学系に配される遮光板であって、
オリフラ部を有するウエハに対して非露光領域を形成するように、直線部と曲線部とからなる連続エッジを有する遮光板。
A light-shielding plate disposed in the illumination optical system of the projection exposure apparatus,
A light-shielding plate having continuous edges including straight and curved portions so as to form a non-exposure region for a wafer having an orientation flat portion.
光源の出射光の照度を均一化してレチクルに照射する照明光学系と、
前記照明光学系に設けられた遮光板と、
前記遮光板を移動させる遮光板移動機構とを備え、
前記遮光板移動機構は、前記照明光学系の光軸に対して前記遮光板を出入りさせる直動機構と、前記照明光学系の光軸を中心に前記遮光板を回転させる第1θ軸機構と、前記直動機構に対して前記遮光板を回転させる第2θ軸機構を有し、
前記遮光板は、直線部と曲線部とからなる連続エッジを有し、
基板のオリフラ部及び投影範囲の相対的位置関係に応じて前記遮光板移動機構によって前記遮光板の位置を制御するようにした投影露光装置。
An illumination optical system that uniformizes the illuminance of the light emitted from the light source and irradiates the reticle.
A light shielding plate provided in the illumination optical system,
A light shielding plate moving mechanism for moving the light shielding plate,
The light-shielding plate moving mechanism moves the light-shielding plate in and out of the optical axis of the illumination optical system, and a first θ-axis mechanism that rotates the light-shielding plate around the optical axis of the illumination optical system. A second θ-axis mechanism for rotating the light shielding plate with respect to the linear motion mechanism,
The light-shielding plate has a continuous edge composed of a straight line portion and a curved portion,
A projection exposure apparatus in which the position of the light shielding plate is controlled by the light shielding plate moving mechanism according to the relative positional relationship between the orientation flat portion of the substrate and the projection range.
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Citations (3)

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JP2005209706A (en) * 2004-01-20 2005-08-04 Nikon Corp Exposure method, aligner and manufacturing method therefor
JP2013069986A (en) * 2011-09-26 2013-04-18 Canon Inc Exposure equipment and method for manufacturing device
JP2015200910A (en) * 2010-09-13 2015-11-12 株式会社オーク製作所 projection exposure apparatus

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WO2010032753A1 (en) 2008-09-18 2010-03-25 株式会社ニコン Aperture stop, optical system, exposure apparatus and electronic device manufacturing method
JP5127875B2 (en) 2010-04-28 2013-01-23 キヤノン株式会社 Lithographic apparatus and article manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005209706A (en) * 2004-01-20 2005-08-04 Nikon Corp Exposure method, aligner and manufacturing method therefor
JP2015200910A (en) * 2010-09-13 2015-11-12 株式会社オーク製作所 projection exposure apparatus
JP2013069986A (en) * 2011-09-26 2013-04-18 Canon Inc Exposure equipment and method for manufacturing device

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