JP2019165149A - Heat treatment device and heat treatment method - Google Patents

Abstract

To provide a heat treatment device and a heat treatment method which can precisely measure reflectance over a broad band of wavelengths.SOLUTION: Synthesized light, in which light emitted from a first light source 310 whose intensity in a comparatively short wave length area is strong and then reduced through a first filter 311 is synthesized with light emitted from a second light source 320 whose intensity in a comparatively long wavelength area is strong and then reduced through a second filter 321, is irradiated to a surface of a semiconductor wafer. Reflectance of the surface of the semiconductor wafer is determined from intensity of the irradiated light and intensity of reflected light. Synthesizing light from the first light source 310 with light from the second light source 320, whose spectral distributions are different from each other allows synthesized light having certain degree of intensity over a broad wavelength area to be irradiated to the surface of the semiconductor wafer, so that reflectance of the semiconductor wafer over a broad band area of wavelengths can be precisely measured.SELECTED DRAWING: Figure 11

Description

  The present invention relates to a heat treatment apparatus and a heat treatment method for heating a thin plate-shaped precision electronic substrate (hereinafter simply referred to as “substrate”) such as a semiconductor wafer by irradiating light.

  In the manufacturing process of a semiconductor device, flash lamp annealing (FLA) that heats a semiconductor wafer in a very short time has attracted attention. Flash lamp annealing uses a xenon flash lamp (hereinafter referred to simply as a “flash lamp” to mean a xenon flash lamp) to irradiate the surface of the semiconductor wafer with flash light so that only the surface of the semiconductor wafer is exposed. This is a heat treatment technique for raising the temperature in a short time (several milliseconds or less).

  The radiation spectral distribution of a xenon flash lamp ranges from the ultraviolet region to the near infrared region, has a shorter wavelength than the conventional halogen lamp, and almost coincides with the fundamental absorption band of a silicon semiconductor wafer. Therefore, when the semiconductor wafer is irradiated with flash light from the xenon flash lamp, the semiconductor wafer can be rapidly heated with little transmitted light. Further, it has been found that if the flash light irradiation is performed for a very short time of several milliseconds or less, only the vicinity of the surface of the semiconductor wafer can be selectively heated.

  Such flash lamp annealing is used for processes that require heating for a very short time, for example, activation of impurities typically implanted in a semiconductor wafer. By irradiating flash light from a flash lamp onto the surface of a semiconductor wafer into which impurities have been implanted by ion implantation, the surface of the semiconductor wafer can be raised to an activation temperature for a very short time, and impurities can be diffused deeply. Only the impurity activation can be carried out without causing them.

  In flash lamp annealing, flash light with an extremely short irradiation time is irradiated to instantaneously raise the temperature of the semiconductor wafer. Therefore, the emission intensity of the flash lamp cannot be feedback-controlled in real time while measuring the wafer temperature. For this reason, it is necessary to obtain in advance the temperature reached by the surface of the semiconductor wafer at the time of flash light irradiation and adjust the light emission intensity of the flash lamp so that the surface is heated to a predetermined target temperature. Patent Document 1 discloses a technique for measuring the reflectance of a semiconductor wafer to be processed and calculating the temperature at which the surface of the semiconductor wafer reaches during flash light irradiation based on the reflectance. In the technique disclosed in Patent Document 1, the surface of a semiconductor wafer is irradiated with halogen light from a halogen lamp, and the reflectance of the semiconductor wafer is calculated from the intensity of the reflected light.

JP 2014-45067 A

  However, since the spectral distribution of the flash lamp used at the time of flash light irradiation and the spectral distribution of the halogen lamp do not match, the reflectance measured using the halogen lamp may not be applied to the flash lamp as it is. Specifically, it is impossible to accurately measure the reflectance of a semiconductor wafer in a wavelength region where the intensity is weak in the spectral distribution of the halogen lamp. Therefore, when the intensity of the wavelength region is high in the spectral distribution of the flash lamp, accurate temperature calculation cannot be performed.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a heat treatment apparatus and a heat treatment method capable of accurately measuring the reflectance of a substrate over a wide wavelength range.

  In order to solve the above problems, the invention of claim 1 is a heat treatment apparatus for heating a substrate by irradiating the substrate with light, and a heating lamp for irradiating the substrate with light to heat the substrate; A light projecting unit that irradiates the substrate with light for reflectance measurement, a light receiving unit that receives the reflected light reflected from the substrate by the light emitted from the light projecting unit, and the light emitted by the light projecting unit And a reflectance calculating unit that calculates the reflectance of the substrate from the intensity of the reflected light received by the light receiving unit, and the light projecting unit includes a plurality of light sources having different spectral distributions from each other. Features.

  According to a second aspect of the present invention, in the heat treatment apparatus according to the first aspect of the present invention, the light projecting section irradiates synthetic light obtained by combining light from the plurality of light sources.

  According to a third aspect of the present invention, in the heat treatment apparatus according to the second aspect of the invention, the light projecting unit is configured such that the spectral distribution of the synthesized light approximates the spectral distribution of light irradiated on the substrate from the heating lamp. As described above, the light of the plurality of light sources is synthesized.

  According to a fourth aspect of the present invention, in the heat treatment apparatus according to the third aspect of the present invention, the light projecting unit includes a plurality of filters provided in a one-to-one correspondence with the plurality of light sources. Each of the light sources is dimmed with a filter corresponding to the light source and synthesized.

  According to a fifth aspect of the present invention, in the heat treatment apparatus according to the first aspect of the invention, the reflectance calculation unit combines the reflected light of the light irradiated onto the substrate individually from each of the plurality of light sources. The reflectance of the substrate is calculated from the intensity of the reflected light.

  The invention according to claim 6 is the heat treatment apparatus according to claim 5, wherein the reflectance calculation unit integrates the intensity of reflected light of light irradiated onto the substrate individually from each of the plurality of light sources. The time is adjusted according to the spectral intensity of the light applied to the substrate from the heating lamp.

  The invention according to claim 7 is obtained by weighting the spectral distribution of the reflectance of the substrate calculated by the reflectance calculation unit in the heat treatment apparatus according to any one of claims 1 to 6. The emission intensity of the heating lamp is corrected based on the parameters.

  According to an eighth aspect of the present invention, in a heat treatment apparatus for heating a substrate by irradiating the substrate with light, a heating lamp for irradiating the substrate with light to heat the substrate, and measuring the reflectance on the substrate A light projecting unit that irradiates the light, a light receiving unit that receives the reflected light reflected by the substrate, and the intensity of the light irradiated by the light projecting unit and the light reception A reflectance calculating unit that calculates the reflectance of the substrate from the intensity of the reflected light received by the unit, and the light projecting unit is similar to a spectral distribution of light irradiated on the substrate from the heating lamp A light source having a spectral distribution of

  The invention according to claim 9 is a heat treatment method for heating a substrate by irradiating the substrate with light, and a heating step of heating the substrate by irradiating the substrate with light from a heating lamp, and a spectral distribution mutually. An irradiation step of irradiating the substrate with light for reflectance measurement from a plurality of light sources different from each other, a light receiving step of receiving reflected light reflected on the substrate by the light irradiated in the irradiation step, and the irradiation A reflectance calculating step of calculating the reflectance of the substrate from the intensity of the light irradiated in the step and the intensity of the reflected light received in the light receiving step.

  According to a tenth aspect of the present invention, in the heat treatment method according to the ninth aspect of the present invention, the irradiating step irradiates synthetic light obtained by synthesizing light from the plurality of light sources.

  The invention according to claim 11 is the heat treatment method according to claim 10, wherein, in the irradiation step, the spectral distribution of the synthesized light approximates the spectral distribution of the light irradiated on the substrate from the heating lamp. As described above, the light of the plurality of light sources is synthesized.

  Further, the invention of claim 12 is the heat treatment method according to the invention of claim 11, wherein a plurality of filters are provided in one-to-one correspondence with the plurality of light sources, and each of the plurality of light sources is provided in the irradiation step. The light is reduced by a filter corresponding to the light source and synthesized.

  The invention of claim 13 is the heat treatment method according to the invention of claim 9, wherein in the irradiation step, the substrate is individually irradiated with light from each of the plurality of light sources, and in the reflectance calculation step, The reflectance of the substrate is calculated from the intensity of the combined reflected light obtained by combining the reflected light of the light irradiated onto the substrate individually from each of a plurality of light sources.

  The invention according to claim 14 is the heat treatment method according to claim 13, wherein, in the reflectance calculation step, integration of the intensity of reflected light of the light individually irradiated onto the substrate from each of the plurality of light sources. The time is adjusted according to the spectral intensity of the light applied to the substrate from the heating lamp.

  The invention of claim 15 is the heat treatment method according to any one of claims 9 to 14, wherein the spectral distribution of the reflectance of the substrate calculated in the reflectance calculation step is weighted. The light emission intensity of the heating lamp is corrected based on the obtained parameters.

  According to a sixteenth aspect of the present invention, in the heat treatment method for heating the substrate by irradiating the substrate with light, a heating step of irradiating the substrate with light from a heating lamp to heat the substrate; An irradiation step of irradiating the substrate with light for reflectance measurement from a light source having a spectral distribution similar to the spectral distribution of the light irradiated on the substrate from the lamp, and the light irradiated in the irradiation step on the substrate A light receiving step for receiving reflected light reflected by the light source, and a reflectance calculating step for calculating the reflectance of the substrate from the intensity of the light irradiated in the irradiation step and the intensity of the reflected light received in the light receiving step. And.

  According to the first to seventh aspects of the present invention, since the substrate is irradiated with light for reflectance measurement from a light projecting unit having a plurality of light sources having different spectral distributions, light having a certain intensity over a wide wavelength range. Can be irradiated to the substrate, and the reflectance of the substrate can be accurately measured over a wide wavelength range.

  In particular, according to the third aspect of the present invention, the light from the plurality of light sources is synthesized so that the spectral distribution of the synthesized light approximates the spectral distribution of the light emitted from the heating lamp to the substrate. The reflectance of the substrate with a spectral distribution close to the light to be emitted can be obtained.

  In particular, according to the invention of claim 6, the integrated time of the intensity of the reflected light of the light individually irradiated onto the substrate from each of the plurality of light sources is determined according to the spectral intensity of the light irradiated onto the substrate from the heating lamp. In order to adjust, the reflectance of the substrate with a spectral distribution close to the light irradiated onto the substrate during heating can be obtained.

  According to the eighth aspect of the present invention, since the substrate is irradiated with the light for reflectance measurement from the light projecting unit having the light source having the same spectral distribution as the spectral distribution of the light irradiated from the heating lamp to the substrate, it is wide. The substrate can be irradiated with light having a certain intensity over the wavelength range, and the reflectance of the substrate can be accurately measured over a wide wavelength range.

  According to the ninth to fifteenth aspects of the present invention, the substrate is irradiated with light having a certain intensity over a wide wavelength range in order to irradiate the substrate with light for reflectance measurement from a plurality of light sources having different spectral distributions. And the reflectivity of the substrate can be accurately measured over a broad wavelength range.

  In particular, according to the invention of claim 11, the light from the plurality of light sources is synthesized so that the spectral distribution of the synthesized light approximates the spectral distribution of the light emitted from the heating lamp to the substrate. The reflectance of the substrate with a spectral distribution close to the light to be emitted can be obtained.

  In particular, according to the invention of claim 14, the integrated time of the intensity of the reflected light of the light individually applied to the substrate from each of the plurality of light sources is determined according to the spectral intensity of the light applied to the substrate from the heating lamp. In order to adjust, the reflectance of the substrate with a spectral distribution close to the light irradiated onto the substrate during heating can be obtained.

  According to the invention of claim 16, since the substrate is irradiated with light for reflectance measurement from a light source having a spectral distribution similar to the spectral distribution of the light irradiated to the substrate from the heating lamp, a certain amount of light is applied over a wide wavelength range. The substrate can be irradiated with light having an intensity, and the reflectance of the substrate can be accurately measured over a wide wavelength range.

It is a top view which shows the heat processing apparatus which concerns on this invention. It is a front view of the heat processing apparatus of FIG. It is a longitudinal cross-sectional view which shows the structure of a heat processing part. It is a perspective view which shows the whole external appearance of a holding | maintenance part. It is a top view of a susceptor. It is sectional drawing of a susceptor. It is a top view of a transfer mechanism. It is a side view of a transfer mechanism. It is a top view which shows arrangement | positioning of a some halogen lamp. It is a figure which shows the structure of a reflectance measurement part. It is a figure which shows the structure of a light projection part. It is a figure which shows typically the spectral distribution of the irradiation light of a 1st light source. It is a figure which shows typically the spectral distribution of the irradiation light of a 2nd light source. This is the spectral intensity of the flash light emitted from the flash lamp. It is a figure which shows typically the spectral distribution of the reflected light of the light irradiated to the surface of the semiconductor wafer from the 1st light source. It is a figure which shows typically the spectral distribution of the reflected light of the light irradiated to the surface of the semiconductor wafer from the 2nd light source.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<First Embodiment>
First, the overall schematic configuration of the heat treatment apparatus 100 according to the present invention will be described. FIG. 1 is a plan view showing a heat treatment apparatus 100 according to the present invention, and FIG. 2 is a front view thereof. The heat treatment apparatus 100 is a flash lamp annealing apparatus that irradiates a disk-shaped semiconductor wafer W as a substrate with flash light and heats the semiconductor wafer W. The size of the semiconductor wafer W to be processed is not particularly limited, and is, for example, φ300 mm or φ450 mm. Impurities are implanted into the semiconductor wafer W before being carried into the heat treatment apparatus 100, and an activation process of the impurities implanted by the heat treatment by the heat treatment apparatus 100 is performed. In FIG. 1 and the subsequent drawings, the size and number of each part are exaggerated or simplified as necessary for easy understanding. Moreover, in each figure of FIGS. 1-3, in order to clarify those directional relationships, the XYZ orthogonal coordinate system which makes a Z-axis direction a perpendicular direction and makes XY plane a horizontal surface is attached | subjected.

  As shown in FIGS. 1 and 2, the heat treatment apparatus 100 includes an indexer unit 101 for loading an unprocessed semiconductor wafer W into the apparatus from outside and unloading the processed semiconductor wafer W outside the apparatus. An alignment unit 230 for positioning the semiconductor wafer W, two cooling units 130 and 140 for cooling the semiconductor wafer W after the heat treatment, a heat treatment unit 160 for performing flash heat treatment on the semiconductor wafer W, and the cooling units 130 and 140, A transfer robot 150 is provided for delivering the semiconductor wafer W to the heat treatment unit 160. Further, the heat treatment apparatus 100 includes a control unit 3 that controls the operation mechanism and the transfer robot 150 provided in each processing unit described above to advance the flash heating process of the semiconductor wafer W.

  The indexer unit 101 loads a plurality of carriers C (two in this embodiment) side by side and loads the unprocessed semiconductor wafers W from the carriers C, and processes the semiconductor wafers processed by the carriers C. And a delivery robot 120 for storing W. The carrier C containing the unprocessed semiconductor wafer W is transported by an automatic guided vehicle (AGV, OHT) or the like and placed on the load port 110, and the carrier C containing the processed semiconductor wafer W is an automatic guided vehicle. Is taken away from the load port 110.

  Further, the load port 110 is configured such that the carrier C can be moved up and down as indicated by an arrow CU in FIG. 2 so that the delivery robot 120 can take in and out an arbitrary semiconductor wafer W with respect to the carrier C. ing. As a form of the carrier C, in addition to a FOUP (front opening unified pod) for storing the semiconductor wafer W in a sealed space, a standard mechanical interface (SMIF) pod and an OC (open for exposing the stored semiconductor wafer W to the open air) cassette).

  In addition, the delivery robot 120 is capable of sliding movement as shown by an arrow 120S in FIG. 1, turning operation and raising / lowering operation as shown by an arrow 120R. As a result, the delivery robot 120 moves the semiconductor wafer W in and out of the two carriers C, and delivers the semiconductor wafer W to the alignment unit 230 and the two cooling units 130 and 140. The delivery / removal robot 120 moves the semiconductor wafer W in and out of the carrier C by sliding the hand 121 and moving the carrier C up and down. The delivery of the semiconductor wafer W between the delivery robot 120 and the alignment unit 230 or the cooling units 130 and 140 is performed by the sliding movement of the hand 121 and the raising / lowering operation of the delivery robot 120.

  The alignment unit 230 is provided connected to the side of the indexer unit 101 along the Y-axis direction. The alignment unit 230 is a processing unit that rotates the semiconductor wafer W in a horizontal plane and directs the semiconductor wafer W in an appropriate direction for flash heating. The alignment unit 230 includes a mechanism (a rotation support unit 237 and a rotation motor 238 in FIG. 10) that rotates the semiconductor wafer W in a horizontal posture inside an alignment chamber 231 that is an aluminum alloy casing, and a semiconductor. A mechanism for optically detecting notches, orientation flats and the like formed on the peripheral edge of the wafer W is provided. Further, the alignment chamber 231 is provided with a reflectance measuring unit 232 that measures the reflectance of the surface of the semiconductor wafer W supported therein. The reflectance measuring unit 232 irradiates the surface of the semiconductor wafer W with light, receives the reflected light reflected on the surface, and measures the reflectance of the surface of the semiconductor wafer W from the intensity of the reflected light. The configuration of the reflectance measurement unit 232 will be further described later.

  Delivery of the semiconductor wafer W to the alignment unit 230 is performed by the delivery robot 120. The semiconductor wafer W is delivered from the delivery robot 120 to the alignment chamber 231 so that the wafer center is located at a predetermined position. The alignment unit 230 adjusts the orientation of the semiconductor wafer W by optically detecting notches and the like by rotating the semiconductor wafer W around the vertical axis around the center of the semiconductor wafer W received from the indexer unit 101 as the rotation center. To do. Further, the reflectance measuring unit 232 measures the reflectance of the surface of the semiconductor wafer W. The semiconductor wafer W whose orientation has been adjusted is taken out from the alignment chamber 231 by the delivery robot 120.

  A transfer chamber 170 that houses the transfer robot 150 is provided as a transfer space for the semiconductor wafer W by the transfer robot 150. The processing chamber 6 of the heat treatment unit 160, the first cool chamber 131 of the cooling unit 130, and the second cool chamber 141 of the cooling unit 140 are connected in communication with three sides of the transfer chamber 170.

  The heat treatment unit 160, which is a main part of the heat treatment apparatus 100, is a substrate processing unit that performs flash heat treatment by irradiating flash light (flash light) from a xenon flash lamp FL onto the pre-heated semiconductor wafer W.

  The two cooling units 130 and 140 have substantially the same configuration. Each of the cooling units 130 and 140 includes a metal cooling plate and a quartz plate placed on the upper surface thereof in the first cool chamber 131 and the second cool chamber 141 which are aluminum alloy casings ( (All are not shown). The cooling plate is adjusted to normal temperature (about 23 ° C.) by a Peltier element or constant temperature water circulation. The semiconductor wafer W that has been subjected to the flash heat treatment in the heat treatment section 160 is loaded into the first cool chamber 131 or the second cool chamber 141 and placed on the quartz plate to be cooled.

  Both the first cool chamber 131 and the second cool chamber 141 are connected between the indexer unit 101 and the transfer chamber 170. In the first cool chamber 131 and the second cool chamber 141, two openings for carrying in and out the semiconductor wafer W are formed. Of the two openings of the first cool chamber 131, the opening connected to the indexer unit 101 can be opened and closed by a gate valve 181. On the other hand, the opening connected to the transfer chamber 170 of the first cool chamber 131 can be opened and closed by a gate valve 183. That is, the first cool chamber 131 and the indexer unit 101 are connected via the gate valve 181, and the first cool chamber 131 and the transfer chamber 170 are connected via the gate valve 183.

  When the semiconductor wafer W is transferred between the indexer unit 101 and the first cool chamber 131, the gate valve 181 is opened. When the semiconductor wafer W is transferred between the first cool chamber 131 and the transfer chamber 170, the gate valve 183 is opened. When the gate valve 181 and the gate valve 183 are closed, the inside of the first cool chamber 131 becomes a sealed space.

  Of the two openings of the second cool chamber 141, the opening connected to the indexer unit 101 can be opened and closed by a gate valve 182. On the other hand, the opening connected to the transfer chamber 170 of the second cool chamber 141 can be opened and closed by a gate valve 184. That is, the second cool chamber 141 and the indexer unit 101 are connected via the gate valve 182, and the second cool chamber 141 and the transfer chamber 170 are connected via the gate valve 184.

  When the semiconductor wafer W is transferred between the indexer unit 101 and the second cool chamber 141, the gate valve 182 is opened. When the semiconductor wafer W is transferred between the second cool chamber 141 and the transfer chamber 170, the gate valve 184 is opened. When the gate valve 182 and the gate valve 184 are closed, the inside of the second cool chamber 141 becomes a sealed space.

  Furthermore, each of the cooling units 130 and 140 includes a gas supply mechanism that supplies clean nitrogen gas to the first cool chamber 131 and the second cool chamber 141 and an exhaust mechanism that exhausts the atmosphere in the chamber. These gas supply mechanism and exhaust mechanism may be capable of switching the flow rate to two stages.

  The transfer robot 150 provided in the transfer chamber 170 can be turned around an axis along the vertical direction as indicated by an arrow 150R. The transfer robot 150 has two link mechanisms composed of a plurality of arm segments, and transfer hands 151a and 151b for holding the semiconductor wafer W are provided at the ends of the two link mechanisms, respectively. These transport hands 151a and 151b are vertically spaced apart from each other by a predetermined pitch, and can be slid linearly in the same horizontal direction independently by a link mechanism. In addition, the transfer robot 150 moves up and down the base on which the two link mechanisms are provided, thereby moving the two transfer hands 151a and 151b up and down while being separated by a predetermined pitch.

  When the transfer robot 150 transfers the semiconductor wafer W as a transfer partner of the first cool chamber 131, the second cool chamber 141, or the heat treatment unit 160, first, the transfer hands 151a and 151b are moved to each other. It turns so as to face the delivery partner, and then moves up and down (or while turning) and is positioned at a height at which any transfer hand delivers the semiconductor wafer W to the delivery partner. Then, the transfer hand 151a (151b) is slid linearly in the horizontal direction, and the transfer partner and the semiconductor wafer W are transferred.

  The transfer of the semiconductor wafer W between the transfer robot 150 and the transfer robot 120 can be performed via the cooling units 130 and 140. That is, the first cool chamber 131 of the cooling unit 130 and the second cool chamber 141 of the cooling unit 140 also function as a path for delivering the semiconductor wafer W between the transfer robot 150 and the delivery robot 120. . Specifically, the semiconductor wafer W is delivered when one of the transfer robot 150 or the delivery robot 120 receives the semiconductor wafer W delivered to the first cool chamber 131 or the second cool chamber 141.

  As described above, the gate valves 181 and 182 are provided between the first cool chamber 131 and the second cool chamber 141 and the indexer unit 101, respectively. Gate valves 183 and 184 are provided between the transfer chamber 170 and the first cool chamber 131 and the second cool chamber 141, respectively. Further, a gate valve 185 is provided between the transfer chamber 170 and the processing chamber 6 of the heat treatment unit 160. When the semiconductor wafer W is transported in the heat treatment apparatus 100, these gate valves are appropriately opened and closed.

  Further, an oxygen concentration meter 155 is provided inside the transfer chamber 170 (FIG. 2). The oxygen concentration meter 155 measures the oxygen concentration in the transfer chamber 170. Further, nitrogen gas is also supplied from the gas supply unit to the transfer chamber 170 and the alignment chamber 231 and the atmosphere inside them is exhausted by the exhaust unit (both not shown).

  Next, the configuration of the heat treatment unit 160 will be described. FIG. 3 is a longitudinal sectional view showing the configuration of the heat treatment unit 160. The heat treatment unit 160 includes a processing chamber 6 that accommodates the semiconductor wafer W and performs heat treatment, a flash lamp house 5 that includes a plurality of flash lamps FL, and a halogen lamp house 4 that includes a plurality of halogen lamps HL. Prepare. A flash lamp house 5 is provided on the upper side of the processing chamber 6, and a halogen lamp house 4 is provided on the lower side. In addition, the heat treatment unit 160 has a holding unit 7 that holds the semiconductor wafer W in a horizontal posture in the processing chamber 6, and a transfer mechanism 10 that transfers the semiconductor wafer W between the holding unit 7 and the transfer robot 150. And comprising.

  The processing chamber 6 is configured by mounting quartz chamber windows above and below a cylindrical chamber side portion 61. The chamber side portion 61 has a substantially cylindrical shape with upper and lower openings. The upper opening is closed by an upper chamber window 63 and the lower opening is closed by a lower chamber window 64. ing. The upper chamber window 63 constituting the ceiling of the processing chamber 6 is a disk-shaped member made of quartz, and functions as a quartz window that transmits the flash light emitted from the flash lamp FL into the processing chamber 6. The lower chamber window 64 constituting the floor of the processing chamber 6 is also a disk-shaped member made of quartz, and functions as a quartz window that transmits light from the halogen lamp HL into the processing chamber 6.

  A reflection ring 68 is attached to the upper part of the inner wall surface of the chamber side part 61, and a reflection ring 69 is attached to the lower part. The reflection rings 68 and 69 are both formed in an annular shape. The upper reflecting ring 68 is attached by fitting from above the chamber side portion 61. On the other hand, the lower reflection ring 69 is mounted by being fitted from the lower side of the chamber side portion 61 and fastened with a screw (not shown). That is, the reflection rings 68 and 69 are both detachably attached to the chamber side portion 61. An inner space of the processing chamber 6, that is, a space surrounded by the upper chamber window 63, the lower chamber window 64, the chamber side portion 61 and the reflection rings 68 and 69 is defined as a heat treatment space 65.

  By attaching the reflection rings 68 and 69 to the chamber side portion 61, a recess 62 is formed on the inner wall surface of the processing chamber 6. That is, a recess 62 surrounded by a central portion of the inner wall surface of the chamber side portion 61 where the reflection rings 68 and 69 are not mounted, a lower end surface of the reflection ring 68, and an upper end surface of the reflection ring 69 is formed. . The recess 62 is formed in an annular shape along the horizontal direction on the inner wall surface of the processing chamber 6, and surrounds the holding unit 7 that holds the semiconductor wafer W. The chamber side portion 61 and the reflection rings 68 and 69 are formed of a metal material (for example, stainless steel) having excellent strength and heat resistance.

  The chamber side 61 is formed with a transfer opening (furnace port) 66 for carrying the semiconductor wafer W into and out of the processing chamber 6. The transfer opening 66 can be opened and closed by a gate valve 185. The transport opening 66 is connected to the outer peripheral surface of the recess 62. Therefore, when the gate valve 185 opens the transfer opening 66, the semiconductor wafer W is carried into the heat treatment space 65 through the recess 62 from the transfer opening 66 and the semiconductor wafer W is carried out from the heat treatment space 65. It can be performed. Further, when the gate valve 185 closes the transfer opening 66, the heat treatment space 65 in the processing chamber 6 is made a sealed space.

A gas supply hole 81 for supplying a processing gas to the heat treatment space 65 is formed in the upper portion of the inner wall of the processing chamber 6. The gas supply hole 81 is formed at a position above the recess 62 and may be provided in the reflection ring 68. The gas supply hole 81 is connected to the gas supply pipe 83 through a buffer space 82 formed in an annular shape inside the side wall of the processing chamber 6. The gas supply pipe 83 is connected to a processing gas supply source 85. A valve 84 is inserted in the middle of the path of the gas supply pipe 83. When the valve 84 is opened, the processing gas is supplied from the processing gas supply source 85 to the buffer space 82. The processing gas flowing into the buffer space 82 flows so as to expand in the buffer space 82 having a smaller fluid resistance than the gas supply hole 81 and is supplied from the gas supply hole 81 into the heat treatment space 65. As the processing gas, an inert gas such as nitrogen (N ₂ ) or a reactive gas such as hydrogen (H ₂ ) or ammonia (NH ₃ ) can be used (nitrogen in this embodiment).

  On the other hand, a gas exhaust hole 86 for exhausting the gas in the heat treatment space 65 is formed in the lower portion of the inner wall of the processing chamber 6. The gas exhaust hole 86 is formed at a position lower than the recess 62 and may be provided in the reflection ring 69. The gas exhaust hole 86 is connected to a gas exhaust pipe 88 through a buffer space 87 formed in an annular shape inside the side wall of the processing chamber 6. The gas exhaust pipe 88 is connected to the exhaust mechanism 190. A valve 89 is inserted in the middle of the path of the gas exhaust pipe 88. When the valve 89 is opened, the gas in the heat treatment space 65 is discharged from the gas exhaust hole 86 to the gas exhaust pipe 88 through the buffer space 87. A plurality of gas supply holes 81 and gas exhaust holes 86 may be provided along the circumferential direction of the processing chamber 6 or may be slit-shaped. Further, the processing gas supply source 85 and the exhaust mechanism 190 may be a mechanism provided in the heat treatment apparatus 100 or a utility of a factory where the heat treatment apparatus 100 is installed.

  A gas exhaust pipe 191 that exhausts the gas in the heat treatment space 65 is also connected to the tip of the transfer opening 66. The gas exhaust pipe 191 is connected to the exhaust mechanism 190 via a valve 192. By opening the valve 192, the gas in the processing chamber 6 is exhausted through the transfer opening 66.

  FIG. 4 is a perspective view showing the overall appearance of the holding unit 7. The holding part 7 includes a base ring 71, a connecting part 72, and a susceptor 74. The base ring 71, the connecting portion 72, and the susceptor 74 are all made of quartz. That is, the whole holding part 7 is made of quartz.

  The base ring 71 is an arc-shaped quartz member that is partially missing from the annular shape. This missing portion is provided to prevent interference between a transfer arm 11 and a base ring 71 of the transfer mechanism 10 described later. The base ring 71 is supported on the wall surface of the processing chamber 6 by being placed on the bottom surface of the recess 62 (see FIG. 3). On the upper surface of the base ring 71, a plurality of connecting portions 72 (four in this embodiment) are erected along the annular circumferential direction. The connecting portion 72 is also a quartz member, and is fixed to the base ring 71 by welding.

  The susceptor 74 is supported by four connecting portions 72 provided on the base ring 71. FIG. 5 is a plan view of the susceptor 74. FIG. 6 is a cross-sectional view of the susceptor 74. The susceptor 74 includes a holding plate 75, a guide ring 76, and a plurality of substrate support pins 77. The holding plate 75 is a substantially circular flat plate member made of quartz. The diameter of the holding plate 75 is larger than the diameter of the semiconductor wafer W. That is, the holding plate 75 has a larger planar size than the semiconductor wafer W.

  A guide ring 76 is installed on the peripheral edge of the upper surface of the holding plate 75. The guide ring 76 is an annular member having an inner diameter larger than the diameter of the semiconductor wafer W. For example, when the diameter of the semiconductor wafer W is φ300 mm, the inner diameter of the guide ring 76 is φ320 mm. The inner periphery of the guide ring 76 has a tapered surface that widens upward from the holding plate 75. The guide ring 76 is formed of quartz similar to the holding plate 75. The guide ring 76 may be welded to the upper surface of the holding plate 75, or may be fixed to the holding plate 75 with a separately processed pin or the like. Alternatively, the holding plate 75 and the guide ring 76 may be processed as an integral member.

  A region inside the guide ring 76 on the upper surface of the holding plate 75 is a flat holding surface 75 a that holds the semiconductor wafer W. A plurality of substrate support pins 77 are provided upright on the holding surface 75 a of the holding plate 75. In the present embodiment, a total of twelve substrate support pins 77 are erected every 30 ° along a circumference concentric with the outer circumference of the holding surface 75a (the inner circumference of the guide ring 76). The diameter of the circle on which the 12 substrate support pins 77 are arranged (the distance between the substrate support pins 77 facing each other) is smaller than the diameter of the semiconductor wafer W. If the diameter of the semiconductor wafer W is 300 mm, then 270 mm to 280 mm (this embodiment) In the form, φ270 mm). Each substrate support pin 77 is made of quartz. The plurality of substrate support pins 77 may be provided on the upper surface of the holding plate 75 by welding, or may be processed integrally with the holding plate 75.

  Returning to FIG. 4, the four connecting portions 72 erected on the base ring 71 and the peripheral portion of the holding plate 75 of the susceptor 74 are fixed by welding. That is, the susceptor 74 and the base ring 71 are fixedly connected by the connecting portion 72. By supporting the base ring 71 of the holding unit 7 on the wall surface of the processing chamber 6, the holding unit 7 is attached to the processing chamber 6. In a state where the holding unit 7 is mounted on the processing chamber 6, the holding plate 75 of the susceptor 74 is in a horizontal posture (a posture in which the normal line matches the vertical direction). That is, the holding surface 75a of the holding plate 75 is a horizontal plane.

  The semiconductor wafer W carried into the processing chamber 6 is placed and held in a horizontal posture on the susceptor 74 of the holding unit 7 attached to the processing chamber 6. At this time, the semiconductor wafer W is supported by twelve substrate support pins 77 erected on the holding plate 75 and held by the susceptor 74. More precisely, the upper ends of the twelve substrate support pins 77 are in contact with the lower surface of the semiconductor wafer W to support the semiconductor wafer W. Since the height of the 12 substrate support pins 77 (the distance from the upper end of the substrate support pin 77 to the holding surface 75a of the holding plate 75) is uniform, the semiconductor wafer W is placed in a horizontal posture by the 12 substrate support pins 77. Can be supported.

  Further, the semiconductor wafer W is supported by a plurality of substrate support pins 77 at a predetermined interval from the holding surface 75 a of the holding plate 75. The thickness of the guide ring 76 is greater than the height of the substrate support pins 77. Accordingly, the horizontal displacement of the semiconductor wafer W supported by the plurality of substrate support pins 77 is prevented by the guide ring 76.

  As shown in FIGS. 4 and 5, the holding plate 75 of the susceptor 74 has an opening 78 penetrating vertically. The opening 78 is provided for the radiation thermometer 20 (see FIG. 3) to receive radiated light (infrared light) emitted from the lower surface of the semiconductor wafer W held by the susceptor 74. That is, the radiation thermometer 20 receives light emitted from the lower surface of the semiconductor wafer W held by the susceptor 74 through the opening 78, and the temperature of the semiconductor wafer W is measured by a separate detector. Further, the holding plate 75 of the susceptor 74 is provided with four through holes 79 through which lift pins 12 of the transfer mechanism 10 to be described later penetrate for the delivery of the semiconductor wafer W.

  FIG. 7 is a plan view of the transfer mechanism 10. FIG. 8 is a side view of the transfer mechanism 10. The transfer mechanism 10 includes two transfer arms 11. The transfer arm 11 has an arc shape that follows the generally annular recess 62. Two lift pins 12 are erected on each transfer arm 11. Each transfer arm 11 can be rotated by a horizontal movement mechanism 13. The horizontal moving mechanism 13 includes a transfer operation position (solid line position in FIG. 7) for transferring the pair of transfer arms 11 to the holding unit 7 and the semiconductor wafer W held by the holding unit 7. It is moved horizontally between the retracted positions (two-dot chain line positions in FIG. 7) that do not overlap in plan view. As the horizontal movement mechanism 13, each transfer arm 11 may be rotated by an individual motor, or a pair of transfer arms 11 may be interlocked by a single motor using a link mechanism. It may be moved.

  The pair of transfer arms 11 are moved up and down together with the horizontal moving mechanism 13 by the lifting mechanism 14. When the elevating mechanism 14 raises the pair of transfer arms 11 at the transfer operation position, a total of four lift pins 12 pass through the through holes 79 (see FIGS. 4 and 5) formed in the susceptor 74, and the lift pins The upper end of 12 protrudes from the upper surface of the susceptor 74. On the other hand, when the elevating mechanism 14 lowers the pair of transfer arms 11 at the transfer operation position, the lift pins 12 are extracted from the through holes 79, and the horizontal movement mechanism 13 moves the pair of transfer arms 11 so as to open each of them. The transfer arm 11 moves to the retracted position. The retracted position of the pair of transfer arms 11 is directly above the base ring 71 of the holding unit 7. Since the base ring 71 is placed on the bottom surface of the recess 62, the retracted position of the transfer arm 11 is inside the recess 62. Note that an exhaust mechanism (not shown) is also provided in the vicinity of a portion where the drive unit (the horizontal movement mechanism 13 and the lifting mechanism 14) of the transfer mechanism 10 is provided, and the atmosphere around the drive unit of the transfer mechanism 10 is provided. Is discharged to the outside of the processing chamber 6.

  Returning to FIG. 3, the flash lamp house 5 provided above the processing chamber 6 includes a light source including a plurality of (30 in the present embodiment) xenon flash lamps FL inside the housing 51, and the light source of the light source. And a reflector 52 provided to cover the top. A lamp light emission window 53 is mounted on the bottom of the casing 51 of the flash lamp house 5. The lamp light emission window 53 constituting the floor of the flash lamp house 5 is a plate-like quartz window made of quartz. By installing the flash lamp house 5 above the processing chamber 6, the lamp light emission window 53 faces the upper chamber window 63. The flash lamp FL irradiates the heat treatment space 65 with flash light from above the processing chamber 6 through the lamp light emission window 53 and the upper chamber window 63.

  Each of the plurality of flash lamps FL is a rod-shaped lamp having a long cylindrical shape, and the longitudinal direction of each of the flash lamps FL is along the main surface of the semiconductor wafer W held by the holding unit 7 (that is, along the horizontal direction). They are arranged in a plane so as to be parallel to each other. Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane.

  The xenon flash lamp FL has a rod-shaped glass tube (discharge tube) in which xenon gas is sealed and an anode and a cathode connected to a capacitor at both ends thereof, and an outer peripheral surface of the glass tube. And a triggered electrode. Since xenon gas is an electrical insulator, electricity does not flow into the glass tube under normal conditions even if electric charges are accumulated in the capacitor. However, when the insulation is broken by applying a high voltage to the trigger electrode, the electricity stored in the capacitor flows instantaneously in the glass tube, and light is emitted by excitation of atoms or molecules of xenon at that time. In such a xenon flash lamp FL, the electrostatic energy previously stored in the capacitor is converted into an extremely short light pulse of 0.1 to 100 milliseconds, so that the continuous lighting such as the halogen lamp HL is possible. It has the characteristic that it can irradiate extremely strong light compared with a light source. That is, the flash lamp FL is a pulse light emitting lamp that emits light instantaneously in an extremely short time of less than 1 second. The light emission time of the flash lamp FL can be adjusted by the coil constant of the lamp power source that supplies power to the flash lamp FL.

  In addition, the reflector 52 is provided above the plurality of flash lamps FL so as to cover all of them. The basic function of the reflector 52 is to reflect the flash light emitted from the plurality of flash lamps FL toward the heat treatment space 65. The reflector 52 is formed of an aluminum alloy plate, and the surface (the surface facing the flash lamp FL) is roughened by blasting.

  The halogen lamp house 4 provided below the processing chamber 6 incorporates a plurality (40 in this embodiment) of halogen lamps HL inside the housing 41. The plurality of halogen lamps HL irradiate the heat treatment space 65 from below the processing chamber 6 through the lower chamber window 64.

  FIG. 9 is a plan view showing the arrangement of a plurality of halogen lamps HL. In the present embodiment, 20 halogen lamps HL are arranged in two upper and lower stages. Each halogen lamp HL is a rod-shaped lamp having a long cylindrical shape. The 20 halogen lamps HL in both the upper and lower stages are arranged so that their longitudinal directions are parallel to each other along the main surface of the semiconductor wafer W held by the holding unit 7 (that is, along the horizontal direction). Yes. Therefore, the plane formed by the arrangement of the halogen lamps HL in both the upper stage and the lower stage is a horizontal plane.

  Further, as shown in FIG. 9, the arrangement density of the halogen lamps HL in the region facing the peripheral portion is higher than the region facing the central portion of the semiconductor wafer W held by the holding portion 7 in both the upper and lower steps. Yes. That is, in both the upper and lower stages, the arrangement pitch of the halogen lamps HL is shorter in the peripheral part than in the central part of the lamp array. For this reason, it is possible to irradiate a larger amount of light to the peripheral portion of the semiconductor wafer W where the temperature is likely to decrease during heating by light irradiation from the halogen lamp HL.

  Further, the lamp group composed of the upper halogen lamp HL and the lamp group composed of the lower halogen lamp HL are arranged so as to intersect in a lattice pattern. That is, a total of 40 halogen lamps HL are arranged so that the longitudinal direction of the upper halogen lamps HL and the longitudinal direction of the lower halogen lamps HL are orthogonal to each other.

  The halogen lamp HL is a filament-type light source that emits light by making the filament incandescent by energizing the filament disposed inside the glass tube. Inside the glass tube, a gas obtained by introducing a trace amount of a halogen element (iodine, bromine, etc.) into an inert gas such as nitrogen or argon is enclosed. By introducing a halogen element, it is possible to set the filament temperature to a high temperature while suppressing breakage of the filament. Therefore, the halogen lamp HL has a characteristic that it has a longer life than a normal incandescent bulb and can continuously radiate strong light. That is, the halogen lamp HL is a continuous lighting lamp that emits light continuously for at least one second. Further, since the halogen lamp HL is a rod-shaped lamp, it has a long life, and by arranging the halogen lamp HL along the horizontal direction, the radiation efficiency to the upper semiconductor wafer W becomes excellent.

  A reflector 43 is also provided in the housing 41 of the halogen lamp house 4 below the two-stage halogen lamp HL (FIG. 3). The reflector 43 reflects the light emitted from the plurality of halogen lamps HL toward the heat treatment space 65.

  FIG. 10 is a diagram illustrating a configuration of the reflectance measurement unit 232 provided in the alignment unit 230. The reflectance measuring unit 232 includes a light projecting unit 300, a light receiving unit 235, a half mirror 236, and the reflectance calculating unit 31. A rotation support unit 237 and a rotation motor 238 are provided in the alignment chamber 231 of the alignment unit 230. The direction of the semiconductor wafer W is adjusted by rotating the rotation support portion 237 that supports the semiconductor wafer W by the rotation motor 238.

  The light emitted from the light projecting unit 300 is reflected by the half mirror 236 and irradiated perpendicularly onto the upper surface of the semiconductor wafer W supported by the rotation support unit 237. The light emitted from the light projecting unit 300 is reflected on the upper surface of the semiconductor wafer W. The reflected light passes through the half mirror 236 and is received by the light receiving unit 235. The reflectance calculation unit 31 calculates the reflectance of the semiconductor wafer W from the intensity of light irradiated by the light projecting unit 300 and the intensity of reflected light received by the light receiving unit 235.

  FIG. 11 is a diagram illustrating a configuration of the light projecting unit 300. The light projecting unit 300 according to the first embodiment has two light sources, a first light source 310 and a second light source 320. The first light source 310 and the second light source 320 have different spectral distributions of light to be irradiated.

  FIG. 12 is a diagram schematically showing the spectral distribution of the irradiation light of the first light source 310. The first light source 310 is, for example, an LED light source. As shown in FIG. 12, the irradiation light of the first light source 310 has a high intensity in a relatively short wavelength region and a low intensity in a relatively long wavelength region.

  On the other hand, FIG. 13 is a diagram schematically showing the spectral distribution of the irradiation light of the second light source 320. The second light source 320 is, for example, a halogen light source. As shown in FIG. 13, the irradiation light of the second light source 320 has a high intensity in a relatively long wavelength region and a low intensity in a relatively short wavelength region in contrast to the first light source 310.

  The light projecting unit 300 of the first embodiment weakens the intensity of light emitted from the first light source 310 by the first filter 311 and weakens the intensity of light emitted from the second light source 320 by the second filter 321. Then, the light emitted from the first light source 310 and attenuated by the first filter 311 and the light emitted from the second light source 320 and attenuated by the second filter 321 are guided by the optical fiber 301 and synthesized. The light projecting unit 300 of the first embodiment irradiates the upper surface of the semiconductor wafer W with synthesized light obtained by synthesizing the emitted light from the first light source 310 and the emitted light from the second light source 320.

  The control unit 3 controls the various operation mechanisms provided in the heat treatment apparatus 100. The configuration of the control unit 3 as hardware is the same as that of a general computer. That is, the control unit 3 includes a CPU that is a circuit that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, a RAM that is a readable and writable memory that stores various information, control software, data, and the like. It has a magnetic disk to store. The processing in the heat treatment apparatus 100 proceeds by the CPU of the control unit 3 executing a predetermined processing program. The reflectance calculation unit 31 is a function processing unit realized by the CPU of the control unit 3 executing a predetermined processing program. In FIG. 1, the control unit 3 is shown in the indexer unit 101. However, the control unit 3 is not limited to this, and the control unit 3 can be arranged at an arbitrary position in the heat treatment apparatus 100.

  In addition to the above configuration, the heat treatment unit 160 prevents an excessive temperature rise in the halogen lamp house 4, the flash lamp house 5, and the processing chamber 6 due to thermal energy generated from the halogen lamp HL and the flash lamp FL during the heat treatment of the semiconductor wafer W. Therefore, various cooling structures are provided. For example, a water cooling tube (not shown) is provided on the wall of the processing chamber 6. The halogen lamp house 4 and the flash lamp house 5 have an air cooling structure in which a gas flow is formed inside to exhaust heat. Air is also supplied to the gap between the upper chamber window 63 and the lamp light radiation window 53 to cool the flash lamp house 5 and the upper chamber window 63.

  Next, the processing operation of the semiconductor wafer W by the heat treatment apparatus 100 according to the present invention will be described. The semiconductor wafer W to be processed is a semiconductor substrate to which impurities (ions) are added by an ion implantation method. The activation of the impurities is performed by flash light irradiation heat treatment (annealing) by the heat treatment apparatus 100. Here, after explaining the rough transfer procedure of the semiconductor wafer W in the heat treatment apparatus 100, the heat treatment of the semiconductor wafer W in the heat treatment unit 160 will be explained.

  First, a plurality of unprocessed semiconductor wafers W into which impurities have been implanted are placed on the load port 110 of the indexer unit 101 while being stored in a plurality of carriers C. Then, the delivery robot 120 takes out the unprocessed semiconductor wafers W from the carrier C one by one and loads them into the alignment chamber 231 of the alignment unit 230. In the alignment chamber 231, the semiconductor wafer W supported by the rotation support portion 237 is rotated around the vertical axis in the horizontal plane with the center portion as the rotation center, and the orientation of the semiconductor wafer W is detected by optically detecting notches and the like. Adjust.

  Further, the orientation of the semiconductor wafer W is adjusted, and the reflectance measurement unit 232 measures the reflectance of the surface of the semiconductor wafer W. The surface of the semiconductor wafer W is a surface of the main surface of the semiconductor wafer W on which a pattern is formed and impurities are implanted. The light emitted from the light projecting unit 300 of the reflectance measuring unit 232 is reflected by the half mirror 236 and irradiated onto the surface of the semiconductor wafer W at an incident angle of 0 °. The light emitted from the light projecting unit 300 is reflected on the surface of the semiconductor wafer W, and the reflected light passes through the half mirror 236 and is received by the light receiving unit 235. The reflectance calculation unit 31 calculates the reflectance of the surface of the semiconductor wafer W by dividing the intensity of the reflected light from the semiconductor wafer W received by the light receiving unit 235 by the intensity of the light irradiated by the light projecting unit 300.

  In the first embodiment, the light projecting unit 300 is emitted from the first light source 310 and attenuated by the first filter 311, and emitted from the second light source 320 and attenuated by the second filter 321. The surface of the semiconductor wafer W is irradiated with synthetic light synthesized with light. Light having a certain intensity over a wide wavelength range by combining the light from the first light source 310 having a high intensity in a relatively short wavelength region and the light from the second light source 320 having a high intensity in a relatively long wavelength region. Can be irradiated onto the surface of the semiconductor wafer W.

  Since the surface of the semiconductor wafer W is irradiated with light having a certain intensity over a wide wavelength range from the light projecting unit 300, the spectral distribution of the reflected light received by the light receiving unit 235 also covers a relatively wide wavelength range. Then, the reflectance calculation unit 31 calculates the spectral reflectance of the surface of the semiconductor wafer W from the spectral intensity of the light irradiated by the light projecting unit 300 and the spectral intensity of the reflected light received by the light receiving unit 235.

  FIG. 14 shows the spectral intensity of the flash light emitted from the flash lamp FL. In the first embodiment, the first light source is such that the spectral distribution of the combined light emitted from the light projecting unit 300 approximates the spectral distribution of the flash light emitted from the flash lamp FL to the semiconductor wafer W as shown in FIG. The light of 310 and the light of the second light source 320 are combined. Specifically, the light from the first light source 310 is reduced by the first filter 311 and the second filter 321 so that the spectral distribution of the combined light approximates the spectral distribution of the flash light applied to the semiconductor wafer W. The light from the second light source 320 is reduced by the above. Thereby, it is possible to obtain the reflectance of the surface of the semiconductor wafer W by irradiating light having a spectral distribution close to that of flash light for flash heating the semiconductor wafer W. Here, “to approximate the spectral distribution of the flash light irradiated to the semiconductor wafer W from the flash lamp FL” is to approximate the spectral distribution of the flash light actually irradiated to the surface of the semiconductor wafer W. This is a concept that includes both the method and the method of approximating the spectral distribution of the flash lamp FL itself.

  Next, the delivery robot 120 of the indexer unit 101 takes out the semiconductor wafer W whose orientation is adjusted from the alignment chamber 231 and carries it into the first cool chamber 131 of the cooling unit 130 or the second cool chamber 141 of the cooling unit 140. The unprocessed semiconductor wafer W carried into the first cool chamber 131 or the second cool chamber 141 is carried out to the transfer chamber 170 by the transfer robot 150. When the unprocessed semiconductor wafer W is transferred from the indexer unit 101 to the transfer chamber 170 via the first cool chamber 131 or the second cool chamber 141, the first cool chamber 131 and the second cool chamber 141 are not connected to the semiconductor wafer W. It functions as a path for delivery.

  The transfer robot 150 that has taken out the semiconductor wafer W turns to face the heat treatment unit 160. Subsequently, the gate valve 185 opens the space between the processing chamber 6 and the transfer chamber 170, and the transfer robot 150 loads the unprocessed semiconductor wafer W into the process chamber 6. At this time, if the preceding heat-treated semiconductor wafer W exists in the processing chamber 6, the unprocessed semiconductor wafer W is taken out after the heat-treated semiconductor wafer W is taken out by one of the transport hands 151a and 151b. W is carried into the processing chamber 6 to replace the wafer. Thereafter, the gate valve 185 closes between the processing chamber 6 and the transfer chamber 170.

  The semiconductor wafer W carried into the processing chamber 6 is preheated by the halogen lamp HL, and then flash heat-treated by flash light irradiation from the flash lamp FL. Impurities are activated by this flash heat treatment.

  After the flash heat treatment is completed, the gate valve 185 opens the space between the process chamber 6 and the transfer chamber 170 again, and the transfer robot 150 carries the semiconductor wafer W after the flash heat process from the process chamber 6 to the transfer chamber 170. . The transfer robot 150 that has taken out the semiconductor wafer W rotates so as to face the first cool chamber 131 or the second cool chamber 141 from the processing chamber 6. Further, the gate valve 185 closes the space between the processing chamber 6 and the transfer chamber 170.

  Thereafter, the transfer robot 150 carries the semiconductor wafer W after the heat treatment into the first cool chamber 131 of the cooling unit 130 or the second cool chamber 141 of the cooling unit 140. In the first cool chamber 131 or the second cool chamber 141, the semiconductor wafer W after the flash heat treatment is cooled. Since the temperature of the entire semiconductor wafer W when it is unloaded from the processing chamber 6 of the heat treatment section 160 is relatively high, it is cooled to near room temperature in the first cool chamber 131 or the second cool chamber 141. is there. After a predetermined cooling processing time has elapsed, the delivery robot 120 carries out the cooled semiconductor wafer W from the first cool chamber 131 or the second cool chamber 141 and returns it to the carrier C. When a predetermined number of processed semiconductor wafers W are stored in the carrier C, the carrier C is unloaded from the load port 110 of the indexer unit 101.

  The description of the flash heat treatment in the heat treatment unit 160 will be continued. Prior to loading the semiconductor wafer W into the processing chamber 6, the air supply valve 84 is opened, and the exhaust valves 89 and 192 are opened to start supply / exhaust into the processing chamber 6. When the valve 84 is opened, nitrogen gas is supplied from the gas supply hole 81 to the heat treatment space 65. When the valve 89 is opened, the gas in the processing chamber 6 is exhausted from the gas exhaust hole 86. Thereby, the nitrogen gas supplied from the upper part of the heat treatment space 65 in the processing chamber 6 flows downward and is exhausted from the lower part of the heat treatment space 65.

  Further, when the valve 192 is opened, the gas in the processing chamber 6 is also exhausted from the transfer opening 66. Further, the atmosphere around the drive unit of the transfer mechanism 10 is also exhausted by an exhaust mechanism (not shown). Note that nitrogen gas is continuously supplied to the heat treatment space 65 during the heat treatment of the semiconductor wafer W in the heat treatment unit 160, and the supply amount is appropriately changed according to the treatment process.

  Subsequently, the gate valve 185 is opened to open the transfer opening 66, and the semiconductor wafer W to be processed is transferred into the heat treatment space 65 in the processing chamber 6 by the transfer robot 150 through the transfer opening 66. The transfer robot 150 moves the transfer hand 151 a (or transfer hand 151 b) holding the unprocessed semiconductor wafer W to a position directly above the holding unit 7 and stops it. Then, when the pair of transfer arms 11 of the transfer mechanism 10 moves horizontally from the retracted position to the transfer operation position and rises, the lift pin 12 protrudes from the upper surface of the holding plate 75 of the susceptor 74 through the through hole 79. The semiconductor wafer W is received. At this time, the lift pins 12 ascend above the upper ends of the substrate support pins 77.

  After the unprocessed semiconductor wafer W is placed on the lift pins 12, the transfer robot 150 moves the transfer hand 151 a out of the heat treatment space 65, and the transfer opening 66 is closed by the gate valve 185. When the pair of transfer arms 11 are lowered, the semiconductor wafer W is transferred from the transfer mechanism 10 to the susceptor 74 of the holding unit 7 and held from below in a horizontal posture. The semiconductor wafer W is supported by a plurality of substrate support pins 77 erected on the holding plate 75 and held by the susceptor 74. The semiconductor wafer W is held by the holding unit 7 with the surface on which the pattern is formed and the impurities are implanted as the upper surface. A predetermined gap is formed between the back surface (main surface opposite to the front surface) of the semiconductor wafer W supported by the plurality of substrate support pins 77 and the holding surface 75 a of the holding plate 75. The pair of transfer arms 11 lowered to below the susceptor 74 is retracted to the retracted position, that is, inside the recess 62 by the horizontal movement mechanism 13.

  After the semiconductor wafer W is held in the horizontal posture by the susceptor 74 of the holding unit 7 from below, the 40 halogen lamps HL are turned on all at once and preheating (assist heating) is started. The halogen light emitted from the halogen lamp HL is irradiated from the lower surface of the semiconductor wafer W through the lower chamber window 64 and the susceptor 74 formed of quartz. By receiving light from the halogen lamp HL, the semiconductor wafer W is preheated and the temperature rises. In addition, since the transfer arm 11 of the transfer mechanism 10 is retracted to the inside of the recess 62, there is no obstacle to heating by the halogen lamp HL.

  When preheating is performed by the halogen lamp HL, the temperature of the semiconductor wafer W is measured by the radiation thermometer 20. That is, the infrared thermometer 20 receives infrared light emitted from the lower surface of the semiconductor wafer W held by the susceptor 74 through the opening 78, and measures the temperature of the wafer being heated. The measured temperature of the semiconductor wafer W is transmitted to the control unit 3. The controller 3 controls the output of the halogen lamp HL while monitoring whether or not the temperature of the semiconductor wafer W that is heated by light irradiation from the halogen lamp HL has reached a predetermined preheating temperature T1. That is, the control unit 3 feedback-controls the output of the halogen lamp HL based on the measurement value by the radiation thermometer 20 so that the temperature of the semiconductor wafer W becomes the preheating temperature T1. The preheating temperature T1 is set to about 600 ° C. to 800 ° C. (in the present embodiment, 700 ° C.) at which the impurities added to the semiconductor wafer W are not likely to diffuse due to heat.

  After the temperature of the semiconductor wafer W reaches the preheating temperature T1, the control unit 3 maintains the semiconductor wafer W at the preheating temperature T1 for a while. Specifically, when the temperature of the semiconductor wafer W measured by the radiation thermometer 20 reaches the preheating temperature T1, the control unit 3 adjusts the output of the halogen lamp HL, so that the temperature of the semiconductor wafer W is almost preliminarily set. The heating temperature is maintained at T1.

  By performing such preheating by the halogen lamp HL, the entire semiconductor wafer W is uniformly heated to the preheating temperature T1. In the stage of preheating with the halogen lamp HL, the temperature of the peripheral edge of the semiconductor wafer W that is more likely to radiate heat tends to be lower than that in the center, but the arrangement density of the halogen lamps HL in the halogen lamp house 4 is The region facing the peripheral portion is higher than the region facing the central portion of the semiconductor wafer W. For this reason, the light quantity irradiated to the peripheral part of the semiconductor wafer W which tends to generate heat increases, and the in-plane temperature distribution of the semiconductor wafer W in the preheating stage can be made uniform.

  When a predetermined time elapses after the temperature of the semiconductor wafer W reaches the preheating temperature T1, the flash lamp FL irradiates the surface of the semiconductor wafer W with flash light. At this time, a part of the flash light emitted from the flash lamp FL goes directly into the processing chamber 6, and another part is once reflected by the reflector 52 and then goes into the processing chamber 6. Flash heating of the semiconductor wafer W is performed by light irradiation.

  Since the flash heating is performed by irradiation with flash light (flash light) from the flash lamp FL, the surface temperature of the semiconductor wafer W can be increased in a short time. That is, the flash light irradiated from the flash lamp FL is converted into a light pulse in which the electrostatic energy stored in the capacitor in advance is extremely short, and the irradiation time is extremely short, about 0.1 milliseconds to 100 milliseconds. It is a strong flash. Then, the surface temperature of the semiconductor wafer W that is flash-heated by flash light irradiation from the flash lamp FL instantaneously rises to a processing temperature T2 of 1000 ° C. or more, and the impurities injected into the semiconductor wafer W are activated. Later, the surface temperature drops rapidly. Thus, since the surface temperature of the semiconductor wafer W can be raised and lowered in a very short time, the impurities can be activated while suppressing the diffusion of the impurities injected into the semiconductor wafer W due to the heat. Since the time required for the activation of impurities is extremely short compared to the time required for the thermal diffusion, the activation is possible even in a short time in which diffusion of about 0.1 millisecond to 100 millisecond does not occur. Complete.

  At the time of flash light irradiation, the light emission intensity of the flash lamp FL is corrected based on the reflectance of the surface of the semiconductor wafer W calculated by the reflectance calculation unit 31. The temperature at which the surface of the bare wafer reaches when it is irradiated with flash light from the flash lamp FL on a silicon semiconductor wafer (bare wafer) on which neither pattern formation nor impurity implantation has been performed is known in advance. Also, the reflectivity of the bare wafer surface is known. Then, based on the ratio between the surface reflectance of the bare wafer and the surface reflectance of the semiconductor wafer W calculated by the reflectance calculation unit 31, the flash lamp FL is adjusted so that the surface temperature of the semiconductor wafer W reaches the processing temperature T2. Adjust the charging voltage to the capacitor. Thus, when the semiconductor wafer W to be processed on which the pattern or film is formed is irradiated with flash light, the surface of the semiconductor wafer W can be accurately heated to the processing temperature T2.

  After the end of the flash heat treatment, the halogen lamp HL is turned off after a predetermined time has elapsed. Thereby, the temperature of the semiconductor wafer W is rapidly lowered from the preheating temperature T1. The temperature of the semiconductor wafer W during the temperature drop is measured by the radiation thermometer 20, and the measurement result is transmitted to the control unit 3. The controller 3 monitors whether or not the temperature of the semiconductor wafer W has dropped to a predetermined temperature from the measurement result of the radiation thermometer 20. Then, after the temperature of the semiconductor wafer W is lowered to a predetermined temperature or lower, the pair of transfer arms 11 of the transfer mechanism 10 is again moved horizontally from the retracted position to the transfer operation position and lifted, whereby the lift pins 12 are moved to the susceptor. The semiconductor wafer W protruding from the upper surface of 74 and subjected to the heat treatment is received from the susceptor 74. Subsequently, the transfer opening 66 closed by the gate valve 185 is opened, and the processed semiconductor wafer W placed on the lift pins 12 is unloaded by the transfer hand 151b (or the transfer hand 151a) of the transfer robot 150. The The transport robot 150 advances the transport hand 151b to a position directly below the semiconductor wafer W pushed up by the lift pins 12 and stops it. Then, when the pair of transfer arms 11 are lowered, the semiconductor wafer W after the flash heating is transferred to and placed on the transfer hand 151b. Thereafter, the transfer robot 150 moves the transfer hand 151b out of the processing chamber 6 and unloads the processed semiconductor wafer W.

  In the first embodiment, the synthesized light obtained by combining the light from the first light source 310 having a high intensity in a relatively short wavelength region and the light from the second light source 320 having a high intensity in a relatively long wavelength region is used as the semiconductor wafer W. The reflectance is obtained by irradiating the surface of the film. If the reflectance obtained by irradiating the surface of the semiconductor wafer W with light only from the first light source 310, which has a high intensity in a relatively short wavelength range but is weak in a relatively long wavelength range, is obtained in a relatively long wavelength range. It is difficult to accurately obtain the reflectivity of. By combining the light of the first light source 310 and the second light source 320 having different spectral distributions, the surface of the semiconductor wafer W can be irradiated with the combined light having a certain intensity over a wide wavelength range. The reflectance of the semiconductor wafer W can be accurately measured over the wavelength.

  Further, the light from the first light source 310 and the light from the second light source 320 so that the spectral distribution of the combined light irradiated from the light projecting unit 300 approximates the spectral distribution of the flash light irradiated from the flash lamp FL to the semiconductor wafer W. Is synthesized. As a result, the reflectance of the semiconductor wafer W can be obtained with a spectral distribution close to that of the flash light irradiated from the flash lamp FL to the semiconductor wafer W. As a result, it is possible to appropriately correct the light emission intensity of the flash lamp FL based on the obtained reflectance.

Second Embodiment
Next, a second embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus 100 of the second embodiment is substantially the same as that of the first embodiment. Further, the processing procedure of the semiconductor wafer W in the heat treatment apparatus 100 of the second embodiment is substantially the same as that of the first embodiment. In the reflectance measurement, in the first embodiment, the combined light obtained by synthesizing the light from the first light source 310 and the light from the second light source 320 is irradiated, but in the second embodiment, the first light source 310 and the second light source are irradiated. The reflected light of the light irradiated onto the semiconductor wafer W individually from the light source 320 is synthesized.

  The light projecting unit 300 of the second embodiment does not include the first filter 311 and the second filter 321, and emits light from the first light source 310 and the second light source 320 individually. In the second embodiment, when measuring the reflectance of the surface of the semiconductor wafer W, the reflected light of the light irradiated on the surface of the semiconductor wafer W from the first light source 310 is received by the light receiving unit 235 to obtain the spectral intensity. Later, the reflected light of the light irradiated on the surface from the second light source 320 is received by the light receiving unit 235 to acquire the spectral intensity. FIG. 15 is a diagram schematically showing a spectral distribution of reflected light of light irradiated from the first light source 310 onto the surface of the semiconductor wafer W. As shown in FIG. The intensity of the reflected light of the first light source 310 having a high intensity in a relatively short wavelength region is also strong in the short wavelength region. On the other hand, FIG. 16 is a diagram schematically showing a spectral distribution of reflected light of light irradiated on the surface of the semiconductor wafer W from the second light source 320. The intensity of the reflected light of the second light source 320 having a high intensity in a relatively long wavelength region is also strong in the long wavelength region.

  Subsequently, the reflectance calculation unit 31 combines the spectral intensity of the reflected light of the first light source 310 as shown in FIG. 15 and the spectral intensity of the reflected light of the second light source 320 as shown in FIG. That is, in the second embodiment, the intensity of the combined reflected light obtained by combining the reflected light of the light irradiated onto the surface of the semiconductor wafer W from each of the first light source 310 and the second light source 320 is acquired. The reflectance calculation unit 31 calculates the reflectance of the surface of the semiconductor wafer W by dividing the intensity of the combined reflected light by the intensity of light irradiated by each of the first light source 310 and the second light source 320. At this time, as the intensity of irradiation light, the intensity of the first light source 310 is used for the short wavelength region where the intensity of the first light source 310 is strong, and the second light source 320 is used for the long wavelength region where the intensity of the second light source 320 is strong. Use the strength of. For the intermediate wavelength region where the intensities of both the first light source 310 and the second light source 320 are not less than a certain level, the average value of the intensities of the first light source 310 and the second light source 320 may be used.

  In the second embodiment, the integration time when the light receiving unit 235 receives the reflected light is adjusted according to the spectral intensity of the flash light emitted from the flash lamp FL to the semiconductor wafer W. Specifically, in the spectral distribution of the flash light from the flash lamp FL shown in FIG. 14, while increasing the integration time when receiving the reflected light in the wavelength region where the intensity of the flash light is strong, the intensity of the flash light is Shorten the integration time when receiving reflected light in the weak wavelength range. Doing so has the same technical significance as obtaining the reflectance of the surface of the semiconductor wafer W by irradiating light having a spectral distribution close to the flash light irradiated on the semiconductor wafer W in the first embodiment. Have.

  The remaining points of the second embodiment excluding reflectance measurement are the same as those of the first embodiment. In the second embodiment, the semiconductor wafer W is obtained from the intensity of the combined reflected light obtained by combining the reflected light of the light irradiated onto the surface of the semiconductor wafer W individually from each of the first light source 310 and the second light source 320 having different spectral distributions. The reflectance of the surface is obtained. Even in this case, similarly to the first embodiment, the surface of the semiconductor wafer W is irradiated with light having a certain intensity over a wide wavelength range, and as a result, the reflectance of the semiconductor wafer W is accurately measured over a wide wavelength range. Can be measured.

  Further, the integrated time when the light receiving unit 235 receives the reflected light is adjusted according to the spectral intensity of the flash light irradiated onto the semiconductor wafer W from the flash lamp FL. Accordingly, it is possible to appropriately correct the light emission intensity of the flash lamp FL based on the obtained reflectance.

<Third Embodiment>
Next, a third embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus 100 of the third embodiment is the same as that of the first embodiment. Further, the processing procedure of the semiconductor wafer W in the heat treatment apparatus 100 of the third embodiment is substantially the same as that of the first embodiment. Furthermore, the reflectance measurement method for the semiconductor wafer W in the third embodiment is the same as that in the first and second embodiments. In the first and second embodiments, the light emission intensity of the flash lamp FL is corrected based on the calculated reflectance of the surface of the semiconductor wafer W. In the third embodiment, the spectral distribution of the reflectance is weighted at the time of correction. ing.

  In both the first embodiment and the second embodiment, the spectral reflectance of the surface of the semiconductor wafer W is calculated from the spectral intensity of the reflected light (the synthetic reflected light in the second embodiment). In the third embodiment, the calculated spectral reflectance is weighted according to the spectral intensity of the flash light irradiated from the flash lamp FL to the semiconductor wafer W, and one parameter indicating the reflectance is acquired. Specifically, in the spectral distribution of the flash light from the flash lamp FL shown in FIG. 14, a high evaluation value is given to the reflectance in the wavelength region where the intensity of the flash light is strong, and the wavelength region where the intensity of the flash light is weak. A light evaluation value is given to the reflectance, and a weighted average of the reflectance is calculated. Then, the charging voltage to the condenser of the flash lamp FL is adjusted based on the parameter obtained as the weighted average, and the light emission intensity of the flash lamp FL is corrected. Rather than handling the spectral reflectance as it is, if the charging voltage is adjusted based on the weighted average weighted according to the spectral intensity of the flash light, the light emission intensity of the flash lamp FL can be corrected easily and more accurately. it can. The remaining points of the third embodiment excluding weighting are the same as those of the first and second embodiments.

<Modification>
While the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the spirit of the present invention. For example, in the first embodiment, the first light source 310 and the second light source 320 having different spectral distributions are provided in the light projecting unit 300, but only one light source may be provided in the light projecting unit 300. . In this case, the light projecting unit 300 is provided with a light source having a spectral distribution similar to the spectral distribution of the flash light irradiated onto the semiconductor wafer W from the heating flash lamp FL. For example, a light source of a xenon arc lamp having a spectral distribution similar to the spectral distribution of the flash light irradiated to the semiconductor wafer W from the xenon flash lamp FL is provided in the light projecting unit 300. In this way, even with a single light source, the reflectance of the semiconductor wafer W can be obtained with a spectral distribution close to that of the flash light irradiated from the flash lamp FL to the semiconductor wafer W. Based on this, the flash lamp can be obtained. The light emission intensity of FL can be corrected appropriately.

  Further, the light projecting unit 300 may be provided with three or more light sources having different spectral distributions. By combining light from three or more light sources having different spectral distributions, the reflectance of the semiconductor wafer W can be accurately measured over a wider wavelength range.

  Further, the calculated reflectance of the surface of the semiconductor wafer W may be extended using an extrapolation curve to the outside of the wavelength range covered by the first light source 310 and the second light source 320. The extrapolation curve may be drawn by an approximate expression (for example, linear approximation of the calculated reflectance end) or drawn with reference to the theoretical value of the thin film formed on the semiconductor wafer W. Also good.

  In the second embodiment, the reflectance is calculated from the intensity of the combined reflected light obtained by combining the reflected light. However, light is individually applied to the surface of the semiconductor wafer W from each of the first light source 310 and the second light source 320. You may make it synthesize | combine the reflectance calculated | required by irradiation. However, an accurate reflectance cannot be obtained in a wavelength region where the intensity of each of the first light source 310 and the second light source 320 is weak, which becomes an error factor after synthesis. Therefore, the reflectance obtained from the first light source 310 is used for the short wavelength region where the intensity of the first light source 310 is strong, and the long wavelength region where the intensity of the second light source 320 is strong is obtained from the second light source 320. Use reflectance. For the intermediate wavelength region in which the intensities of both the first light source 310 and the second light source 320 are equal to or higher than a certain level, the average value of the intensities of the first light source 310 and the reflectance obtained from the second light source 320 may be used. good. Even in this case, the reflectance of the semiconductor wafer W can be accurately measured over a wide wavelength range, as in the first and second embodiments.

  Further, in the second embodiment, only the intensity of a certain level or more is extracted from the reflected light of the light irradiated to the surface of the semiconductor wafer W individually from each of the first light source 310 and the second light source 320, and the intensity of the combined reflected light is increased. You may make it acquire.

  In the above embodiment, the flash lamp house 5 is provided with 30 flash lamps FL. However, the present invention is not limited to this, and the number of flash lamps FL can be any number. . The flash lamp FL is not limited to a xenon flash lamp, and may be a krypton flash lamp. Further, the number of halogen lamps HL provided in the halogen lamp house 4 is not limited to 40, and may be an arbitrary number.

  Further, in the above embodiment, the preheating of the semiconductor wafer W is performed using the filament-type halogen lamp HL as a continuous lighting lamp that continuously emits light for 1 second or longer, but is not limited thereto. Instead of the halogen lamp HL, a pre-heating may be performed using a discharge arc lamp (for example, a xenon arc lamp) as a continuous lighting lamp. Alternatively, a susceptor that holds the semiconductor wafer W may be placed on a hot plate, and the semiconductor wafer W may be preheated by heat conduction from the hot plate.

  The substrate to be processed by the heat treatment apparatus 100 is not limited to a semiconductor wafer, and may be a glass substrate or a solar cell substrate used for a flat panel display such as a liquid crystal display device. The technique according to the present invention may be applied to heat treatment of a high dielectric constant gate insulating film (High-k film), bonding between a metal and silicon, or crystallization of polysilicon.

DESCRIPTION OF SYMBOLS 3 Control part 4 Halogen lamp house 5 Flash lamp house 6 Processing chamber 7 Holding part 10 Transfer mechanism 31 Reflectivity calculation part 65 Heat processing space 100 Heat processing apparatus 101 Indexer part 130,140 Cooling part 150 Transfer robot 160 Heat processing part 230 Alignment part 231 Alignment chamber 232 Reflectance measuring unit 235 Light receiving unit 300 Projecting unit 301 Optical fiber 310 First light source 311 First filter 320 Second light source 321 Second filter FL Flash lamp HL Halogen lamp W Semiconductor wafer

Claims (16)

A heat treatment apparatus for heating a substrate by irradiating the substrate with light,
A heating lamp for irradiating the substrate with light to heat the substrate;
A light projecting unit that irradiates the substrate with light for reflectance measurement;
A light receiving unit that receives the reflected light reflected by the substrate, the light emitted from the light projecting unit;
A reflectance calculating unit that calculates the reflectance of the substrate from the intensity of light irradiated by the light projecting unit and the intensity of reflected light received by the light receiving unit;
With
The light projecting unit includes a plurality of light sources having different spectral distributions from each other. The heat treatment apparatus according to claim 1, wherein
The said light projection part irradiates the synthetic light which synthesize | combined the light of these light sources, The heat processing apparatus characterized by the above-mentioned. The heat treatment apparatus according to claim 2,
The light projecting unit synthesizes light of the plurality of light sources so that a spectral distribution of the combined light approximates a spectral distribution of light irradiated on the substrate from the heating lamp. The heat treatment apparatus according to claim 3, wherein
The light projecting unit has a plurality of filters provided in a one-to-one correspondence with the plurality of light sources, and synthesizes each light of the plurality of light sources by dimming with a filter corresponding to the light source. The heat processing apparatus characterized by the above-mentioned. The heat treatment apparatus according to claim 1, wherein
The reflectance calculation unit calculates the reflectance of the substrate from the intensity of the combined reflected light obtained by combining the reflected light of the light irradiated onto the substrate individually from each of the plurality of light sources. . The heat treatment apparatus according to claim 5, wherein
The reflectance calculation unit calculates an integrated time of the intensity of the reflected light of the light individually irradiated on the substrate from each of the plurality of light sources according to the spectral intensity of the light irradiated on the substrate from the heating lamp. A heat treatment apparatus characterized by adjusting. In the heat processing apparatus in any one of Claims 1-6,
A heat treatment apparatus, wherein the emission intensity of the heating lamp is corrected based on a parameter obtained by weighting the spectral distribution of the reflectance of the substrate calculated by the reflectance calculation unit. A heat treatment apparatus for heating a substrate by irradiating the substrate with light,
A heating lamp for irradiating the substrate with light to heat the substrate;
A light projecting unit that irradiates the substrate with light for reflectance measurement;
A light receiving unit that receives the reflected light reflected by the substrate, the light emitted from the light projecting unit;
A reflectance calculating unit that calculates the reflectance of the substrate from the intensity of light irradiated by the light projecting unit and the intensity of reflected light received by the light receiving unit;
With
The light projecting unit includes a light source having a spectral distribution similar to a spectral distribution of light irradiated on the substrate from the heating lamp. A heat treatment method for heating a substrate by irradiating the substrate with light,
A heating step of heating the substrate by irradiating the substrate with light from a heating lamp;
An irradiation step of irradiating the substrate with light for reflectance measurement from a plurality of light sources having different spectral distributions;
A light receiving step in which the light irradiated in the irradiation step receives reflected light reflected by the substrate;
A reflectance calculating step for calculating the reflectance of the substrate from the intensity of the light irradiated in the irradiation step and the intensity of the reflected light received in the light receiving step;
A heat treatment method comprising: The heat treatment method according to claim 9, wherein
In the irradiation step, the heat treatment method is characterized by irradiating a synthesized light obtained by synthesizing light from the plurality of light sources. The heat treatment method according to claim 10, wherein
In the irradiation step, the light of the plurality of light sources is combined so that the spectral distribution of the combined light approximates the spectral distribution of the light irradiated on the substrate from the heating lamp. The heat treatment method according to claim 11,
A plurality of filters are provided corresponding to the plurality of light sources on a one-to-one basis,
In the irradiation step, the light of each of the plurality of light sources is dimmed with a filter corresponding to the light source and synthesized. The heat treatment method according to claim 9, wherein
In the irradiation step, the substrate is individually irradiated with light from each of the plurality of light sources,
In the reflectivity calculating step, the reflectivity of the substrate is calculated from the intensity of the combined reflected light obtained by combining the reflected light of the light irradiated onto the substrate individually from each of the plurality of light sources. . The heat treatment method according to claim 13,
In the reflectance calculation step, an integrated time of the intensity of the reflected light of the light individually applied to the substrate from each of the plurality of light sources is determined according to the spectral intensity of the light applied to the substrate from the heating lamp. A heat treatment method characterized by adjusting. In the heat treatment method according to any one of claims 9 to 14,
A heat treatment method, wherein the emission intensity of the heating lamp is corrected based on a parameter obtained by weighting the spectral distribution of the reflectance of the substrate calculated in the reflectance calculation step. A heat treatment method for heating a substrate by irradiating the substrate with light,
A heating step of heating the substrate by irradiating the substrate with light from a heating lamp;
An irradiation step of irradiating the substrate with light for reflectance measurement from a light source having a spectral distribution similar to the spectral distribution of the light irradiated on the substrate from the heating lamp;
A light receiving step in which the light irradiated in the irradiation step receives reflected light reflected by the substrate;
A reflectance calculating step for calculating the reflectance of the substrate from the intensity of the light irradiated in the irradiation step and the intensity of the reflected light received in the light receiving step;
A heat treatment method comprising:

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