JP2019001698A - Method for manufacturing support glass substrate - Google Patents

Abstract

To provide a method for increasing Young's modulus of a support glass substrate without deteriorating moldability.SOLUTION: A method for manufacturing a support glass substrate for supporting a processed substrate includes: a molding step of molding a support glass substrate; and a heat treatment step where the molded support glass substrate is subject to heat treatment to increase Young's modulus of the support glass substrate.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a method of manufacturing a supporting glass substrate for supporting a processed substrate, and specifically, for supporting a processed substrate including a semiconductor chip molded with at least a sealing material in a manufacturing process of a semiconductor package. The present invention relates to a method for manufacturing a supporting glass substrate.

  Mobile electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistance) are required to be smaller and lighter. Along with this, the mounting space of semiconductor chips used in these electronic devices is also strictly limited, and high-density mounting of semiconductor chips has become a problem. Therefore, in recent years, high-density mounting of semiconductor packages has been achieved by three-dimensional mounting technology, that is, by stacking semiconductor chips and interconnecting the semiconductor chips.

  A conventional wafer level package (WLP) is manufactured by forming bumps in the state of a wafer and then separating them by dicing. However, in the conventional WLP, in addition to the difficulty of increasing the number of pins, since the back surface of the semiconductor chip is mounted, the semiconductor chip is likely to be chipped.

  Therefore, a fan-out type WLP has been proposed as a new WLP. The fan-out type WLP can increase the number of pins, and can prevent chipping of the semiconductor chip by protecting the end portion of the semiconductor chip.

  The fan out type WLP includes a chip first type and a chip last type manufacturing method. In the chip first type, for example, a plurality of semiconductor chips are molded with a resin sealing material to form a processed substrate, and then a step of wiring on one surface of the processed substrate, a step of forming solder bumps, and the like. In the chip last type, for example, a step of forming a solder bump after forming a processed substrate by arranging a plurality of semiconductor chips after molding a wiring layer on a support substrate and molding with a resin sealing material, etc. Have

  Furthermore, recently, a semiconductor package called a panel level package (PLP) has been studied. In PLP, a rectangular support substrate is used instead of a wafer to reduce the manufacturing cost while increasing the number of semiconductor packages per support substrate.

  Since these semiconductor package manufacturing processes involve a heat treatment of about 200 ° C., the sealing material may be deformed and the processed substrate may be warped. When warping occurs in the processed substrate, it becomes difficult to wire with high density on one surface of the processed substrate, and it is also difficult to accurately form solder bumps.

  Under such circumstances, in order to suppress warpage of the processed substrate, use of a glass substrate to support the processed substrate has been studied (see Patent Document 1).

  The glass substrate is easy to smooth the surface and has rigidity. Therefore, when a glass substrate is used as the support substrate, the processed substrate can be supported firmly and accurately. In addition, the glass substrate easily transmits light such as ultraviolet light and infrared light. Therefore, when a glass substrate is used as the support substrate, the processed substrate can be easily fixed by providing an adhesive layer such as an ultraviolet curable adhesive. Furthermore, by providing a release layer or the like that absorbs infrared rays, the processed substrate can be easily separated. As another method, by providing an adhesive layer or the like with an ultraviolet curable tape or the like, the processed substrate can be easily fixed and separated.

Japanese Patent Laying-Open No. 2015-78113

“About Bimetal and Thermostat” [Search June 9, 2017] Internet <URL: http://ktc-bimetal.co.jp/pdf/bimetal.pdf>

  In the manufacturing process of fan-out type WLP and PLP, as a method for reducing the warpage of the laminated substrate, it is conceivable to increase the Young's modulus of the glass substrate. For example, in Non-Patent Document 1, when a laminated substrate is manufactured by bonding different materials having different thermal expansion coefficients, if the Young's modulus of the other material is relatively higher than one material, It is described that warpage can be reduced. Therefore, it is considered that when the Young's modulus of the supporting glass substrate is increased, the warpage of the laminated substrate including the processed substrate and the supporting glass substrate can be reduced.

  However, if the glass composition is changed to increase the Young's modulus of the supporting glass substrate, the glass structure becomes unstable and it becomes difficult to form a plate shape, and the manufacturing efficiency of the supporting glass substrate tends to decrease.

  This invention is made | formed in view of the said situation, The technical subject is to devise the method of raising the Young's modulus of a support glass substrate, without reducing a moldability.

  As a result of repeating various experiments, the present inventor has found that the above technical problem can be solved by performing a heat treatment on the support glass substrate after forming, and proposes as the present invention. That is, the method for producing a supporting glass substrate of the present invention is a method for producing a supporting glass substrate for supporting a processed substrate. The forming step of forming the supporting glass substrate and the supporting glass substrate after forming are heat-treated and supported. And a heat treatment step for increasing the Young's modulus of the glass substrate. Here, “Young's modulus” refers to a value measured by a bending resonance method.

  It is preferable that the manufacturing method of the support glass substrate of this invention is equipped with the heat processing process which heat-processes the support glass substrate after shaping | molding, and raises the Young's modulus of a support glass substrate. If it does in this way, the Young's modulus of a support glass substrate can be raised, without reducing a moldability. As a result, in the manufacturing process of the fan-out type WLP and PLP, it becomes easy to reduce the warpage of the multilayer substrate.

  Moreover, it is preferable that the manufacturing method of the support glass substrate of this invention heat-processes the support glass substrate after shaping | molding so that the Young's modulus of a support glass substrate may fall in the management target range.

  Moreover, it is preferable that the manufacturing method of the support glass substrate of this invention makes the highest temperature of heat processing higher than (strain point of support glass substrate-100) degreeC.

  In the method for producing a supporting glass substrate of the present invention, it is preferable to lower the heat treatment temperature at a rate of 5 ° C./min or less after reaching the maximum heat treatment temperature.

  Moreover, it is preferable that the manufacturing method of the support glass substrate of this invention reduces the curvature amount of a support glass substrate to 40 micrometers or less by heat processing. Here, the “warp amount” refers to the sum of the absolute value of the maximum distance between the highest point and the least square focal plane in the entire supporting glass substrate and the absolute value of the lowest point and the least square focal plane. For example, it can be measured by SBW-331ML / d manufactured by Kobelco Kaken.

  Moreover, the manufacturing method of the support glass substrate of this invention prepares the setter for heat processing larger than the dimension of a support glass substrate, and after mounting the support glass substrate after shaping | molding on the setter for heat processing, it is in a heat treatment process. It is preferable to provide.

  Moreover, it is preferable that the manufacturing method of the support glass substrate of this invention shape | molds a support glass substrate so that plate | board thickness may be 400 micrometers or more and less than 2 mm.

  Moreover, it is preferable that the manufacturing method of the support glass substrate of this invention shape | molds a support glass substrate by the overflow down draw method.

  Moreover, it is preferable that the manufacturing method of the supporting glass substrate of this invention is equipped with the grinding | polishing process of grind | polishing the surface of a supporting glass substrate after a heat treatment process, and reducing a total board thickness deviation (TTV) to less than 2.0 micrometers. Here, the “total thickness deviation (TTV)” is a difference between the maximum thickness and the minimum thickness of the entire supporting glass substrate, and can be measured by, for example, SBW-331ML / d manufactured by Kobelco Kaken.

  Moreover, it is preferable that the manufacturing method of the support glass substrate of this invention is equipped with the cutting removal process which cuts and removes the peripheral part of a support glass substrate after a heat treatment process.

  The method for manufacturing a semiconductor package of the present invention includes a lamination process for producing a laminated substrate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and a process for performing a processing process on the processed substrate of the laminated substrate. It is preferable that the supporting glass substrate is produced by the manufacturing method of the supporting glass substrate.

  In the semiconductor package manufacturing method of the present invention, it is preferable that the processed substrate includes a semiconductor chip molded with at least a sealing material.

  In the method for manufacturing a semiconductor package of the present invention, it is preferable that the processing includes a process of wiring on one surface of the processed substrate.

  In the semiconductor package manufacturing method of the present invention, it is preferable that the processing process includes a process of forming a solder bump on one surface of the processed substrate.

It is a conceptual perspective view which shows an example of the laminated substrate which concerns on this invention. It is a conceptual sectional view showing a chip first type manufacturing process of a fan out type WLP.

  Below, the manufacturing method of the support glass substrate of this invention is demonstrated in detail.

  In the method for producing a supporting glass substrate of the present invention, glass raw materials are first prepared and mixed to prepare a glass batch. After the glass batch is put into a glass melting furnace, the obtained molten glass is clarified and stirred. Thus, it is preferable to supply a forming apparatus and form a plate to obtain a supporting glass substrate.

  In the method for producing a supporting glass substrate of the present invention, it is preferable to prepare a glass batch so that the Young's modulus of the supporting glass substrate is 60 GPa or more (desirably 65 GPa or more, 70 GPa or more, particularly 75 to 130 GPa). When the ratio of the semiconductor chip is small and the ratio of the sealing material is large in the processed substrate, the rigidity of the entire laminated substrate is lowered, and the processed substrate is easily warped in the processing step. Therefore, when the Young's modulus of the supporting glass substrate is increased, it becomes easy to reduce warpage of the processed substrate, and the processed substrate can be supported firmly and accurately.

  The glass batch is preferably prepared to have a desired coefficient of thermal expansion. Specifically, when the ratio of the semiconductor chip is small in the processed substrate and the ratio of the sealing material is large, a glass batch is prepared so as to obtain a high expansion glass. When the ratio is large and the ratio of the sealing material is small, it is preferable to prepare a glass batch so that a low expansion glass is obtained.

When the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is regulated to 0 × 10 ⁻⁷ / ° C. or more and less than 50 × 10 ⁻⁷ / ° C., the glass composition of the supporting glass substrate is SiO. _{2 55~75%, Al 2 O 3} 15~30%, Li 2 O 0.1~6%, Na 2 O + K 2 O (Na 2 O and _{K 2} O in total amount) 0~8%, MgO + CaO + SrO + BaO (MgO , CaO, SrO and BaO) It is preferable to prepare a glass batch so as to contain 0 to 10%, SiO ₂ 55 to 75%, Al ₂ O ₃ 10 to 30%, Li ₂ O + Na ₂ O + K ₂ It is also preferable to prepare a glass batch to contain O (total amount of Li ₂ O, Na ₂ O and K ₂ O) 0-0.3%, MgO + CaO + SrO + BaO 5-20%, SiO ₂ 5 _{5~68%, Al 2 O 3 12~25} %, B 2 O 3 0~15%, it is also preferable to prepare the glass batch to contain 5~30% MgO + CaO + SrO + BaO. When the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is regulated to 50 × 10 ⁻⁷ / ° C. or more and less than 70 × 10 ⁻⁷ / ° C., the glass composition of the supporting glass substrate is SiO. _{2 55~75%, Al 2 O 3} 3~15%, B 2 O 3 5~20%, 0~5% MgO, CaO 0~10%, SrO 0~5%, BaO 0~5%, ZnO 0 _{~5%, Na 2 O 5~15%} , preferably be prepared glass batch to contain _{K 2 O 0~10%, SiO 2} 64~71%, Al 2 O 3 5~10%, B ₂ O ₃ 8-15%, MgO 0-5%, CaO 0-6%, SrO 0-3%, BaO 0-3%, ZnO 0-3%, Na ₂ O 5-15%, K ₂ O 0 More preferably, the glass batch is prepared to contain ~ 5%. When the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is regulated to 70 × 10 ⁻⁷ / ° C. or more and 85 × 10 ⁻⁷ / ° C. or less, the glass composition of the supporting glass substrate is expressed by mass%, SiO 2 ₂ 60-75%, Al ₂ O ₃ 5-15%, B ₂ O ₃ 5-20%, MgO 0-5%, CaO 0-10%, SrO 0-5%, BaO 0-5%, ZnO 0 _{~5%, Na 2 O 7~16%} , preferably be prepared glass batch to contain _{K 2 O 0~8%, SiO 2} 60~68%, Al 2 O 3 5~15%, B ₂ O ₃ 5-20%, MgO 0-5%, CaO 0-10%, SrO 0-3%, BaO 0-3%, ZnO 0-3%, Na ₂ O 8-16%, K ₂ O 0 More preferably, the glass batch is prepared to contain ˜3%. When the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is restricted to 85 × 10 ⁻⁷ / ° C. and 120 × 10 ⁻⁷ / ° C. or less, the glass composition of the supporting glass substrate is expressed by mass%, and SiO 2 _{2 55~70%, Al 2 O 3} 3~13%, B 2 O 3 2~8%, 0~5% MgO, CaO 0~10%, SrO 0~5%, BaO 0~5%, ZnO 0 _{~5%, Na 2 O 10~21%} , it is preferable to prepare the glass batch to contain K 2 O 0~5%. When the average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C. is regulated to more than 120 × 10 ⁻⁷ / ° C. and 165 × 10 ⁻⁷ / ° C. or less, the glass composition of the supporting glass substrate is expressed by mass%, SiO 2 _{2 53~65%, Al 2 O 3} 3~13%, B 2 O 3 0~5%, MgO 0.1~6%, CaO 0~10%, SrO 0~5%, BaO 0~5%, _{0~5% ZnO, Na 2 O +} K 2 O 20~40%, Na 2 O 12~21%, it is preferable to prepare the glass batch to contain K 2 O 7~21%. If it does in this way, while it becomes easy to adjust a thermal expansion coefficient in the management target range, and devitrification resistance improves, it becomes easy to shape | mold a support glass substrate with a small total board thickness deviation (TTV). “Average linear thermal expansion coefficient in the temperature range of 30 to 380 ° C.” refers to a value measured with a dilatometer.

One kind selected from the group of As ₂ O ₃ , Sb ₂ O ₃ , CeO ₂ , SnO ₂ , F, Cl, SO ₃ (preferably a group of SnO ₂ , Cl, SO ₃ ) as a fining agent in the glass batch Or you may add 2 to 2 mass% of 2 or more types. The total amount of SnO ₂ , SO ₃ and Cl is preferably 0 to 1% by mass, 100 to 3000 ppm (0.01 to 0.3% by mass), 300 to 2500 ppm, particularly 500 to 2500 ppm. In addition, when the total amount of SnO ₂ , SO ₃ and Cl is less than 100 ppm, it becomes difficult to enjoy the clarification effect.

From an environmental point of view, it is preferable to refrain from using As ₂ O ₃ , Sb ₂ O ₃ and F as much as possible, and it is preferable that they are not substantially contained. Here, “substantially does not contain” specifically means that the content of the explicit component is less than 500 ppm (0.05 mass%). From an environmental point of view, it is also preferable that the glass composition does not substantially contain PbO or Bi ₂ O ₃ .

The liquidus temperature of the supporting glass substrate is less than 1150 ° C (desirably 1120 ° C or lower, 1100 ° C or lower, 1080 ° C or lower, 1050 ° C or lower, 1010 ° C or lower, 980 ° C or lower, 960 ° C or lower, 950 ° C or lower, especially 940 ° C or lower. It is preferable to prepare a glass batch such that Further, the liquid phase viscosity of the supporting glass substrate is 10 ^4.8 dPa · s or more (desirably 10 ^5.0 dPa · s or more, 10 ^5.2 dPa · s or more, 10 ^5.4 dPa · s or more, particularly 10 ⁵ It is preferable to prepare a glass batch so that it may become ⁶ dPa * s or more. In this way, since it becomes easy to mold by the downdraw method, particularly the overflow downdraw method, the overall thickness deviation (TTV) can be reduced without polishing the surface. Alternatively, with a small amount of polishing, the overall thickness deviation (TTV) can be reduced to less than 2.0 μm, particularly less than 1.0 μm. As a result, the manufacturing cost of the supporting glass substrate can be reduced. The “liquid phase temperature” is obtained by passing the standard sieve 30 mesh (500 μm) and putting the glass powder remaining on the 50 mesh (300 μm) into a platinum boat, and holding it in a temperature gradient furnace for 24 hours. It can be calculated by measuring the temperature of precipitation. The “liquid phase viscosity” can be calculated by measuring the viscosity of the glass at the liquid phase temperature by a platinum ball pulling method.

  In the manufacturing method of the support glass substrate of this invention, it is preferable to shape | mold a support glass substrate so that plate | board thickness may be 400 micrometers or more and less than 2 mm. The thickness of the supporting glass substrate is preferably 400 μm or more, 500 μm or more, 600 μm or more, 700 μm or more, 800 μm or more, 900 μm or more, particularly 1000 μm or more. When the thickness of the supporting glass substrate is too small, the laminated substrate is likely to warp and the mechanical strength is lowered, and the supporting glass substrate is easily damaged in the manufacturing process of the semiconductor package. On the other hand, if the thickness of the supporting glass substrate is too large, the mass of the laminated substrate becomes large, and the handling property is lowered. Further, in the semiconductor package manufacturing process, there is a possibility that the laminated substrate cannot clear the height restriction in the semiconductor package manufacturing apparatus. Accordingly, the thickness of the supporting glass substrate is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, and particularly 1.1 mm or less.

  It is preferable to form the supporting glass substrate by a downdraw method, particularly an overflow downdraw method. In the overflow downdraw method, the molten glass overflows from both sides of the heat-resistant bowl-shaped structure, and the overflowing molten glass is merged at the lower top end of the bowl-shaped structure to form a merged surface in the central region in the plate thickness direction. This is a method in which the film is stretched downward while forming. In the overflow down draw method, the surface to be the glass surface is not in contact with the bowl-like refractory and is molded in a free surface state, so that the overall thickness deviation (TTV) is reduced without polishing the surface. be able to. Alternatively, with a small amount of polishing, the overall thickness deviation (TTV) can be reduced to less than 2.0 μm, particularly less than 1.0 μm. As a result, the manufacturing cost of the supporting glass substrate can be reduced.

  In addition to the overflow downdraw method, for example, a slot down method, a redraw method, a float method, or the like can be adopted as a method for forming the supporting glass substrate.

  It is preferable that the manufacturing method of the support glass substrate of this invention is equipped with the process of measuring the Young's modulus of the support glass substrate after shaping | molding before a heat treatment process. In this way, it becomes easy to control the Young's modulus of the supporting glass substrate within the management target range by optimizing the heat treatment conditions (the maximum temperature of the heat treatment, the cooling rate of the heat treatment, etc.).

  The manufacturing method of the support glass substrate of this invention may provide the washing | cleaning process of a support glass substrate before a heat treatment process. Thereby, even if a foreign material adheres to the supporting glass substrate, the adhered foreign material can be prevented from being burned onto the surface of the supporting glass substrate by heat treatment.

  The manufacturing method of the support glass substrate of this invention is equipped with the heat processing process which heat-processes the support glass substrate after shaping | molding, and raises the Young's modulus of a support glass substrate. In the heat treatment step, the Young's modulus of the supporting glass substrate is preferably increased by 0.01 to 5 GPa, more preferably the Young's modulus is increased by 0.1 to 4 GPa, and the Young's modulus is further increased by 0.5 to 3 GPa. It is particularly preferable to increase the Young's modulus by 1 to 2 GPa. If the increase in Young's modulus of the supporting glass substrate by heat treatment is too small, there is a possibility that the significance of providing a heat treatment step is lost.

  It is preferable that the manufacturing method of the support glass substrate of this invention is equipped with the heat processing process which heat-processes the support glass substrate after shaping | molding, and raises the density of a support glass substrate. This heat treatment can be performed in combination with a heat treatment for increasing the Young's modulus. If it does in this way, when it is necessary to adjust the density of a supporting glass board | substrate strictly, it becomes easy to control the density of a supporting glass board | substrate within the management target range. In addition, although it is also possible to reduce the density of the supporting glass substrate by heat treatment, in this case, the supporting glass substrate must be subjected to a heat treatment step after sufficiently cooling the supporting glass substrate at the time of molding. Efficiency tends to decrease.

  In the manufacturing method of the support glass substrate of this invention, it is preferable to heat-process the support glass substrate after shaping | molding so that the Young's modulus of a support glass substrate may fall in the management target range. Thereby, the dispersion | variation in the Young's modulus of the support glass substrate between manufacturing lots can be reduced. As a result, the quality of the supporting glass substrate can be stabilized.

  The increase width of the Young's modulus of the support glass substrate due to the heat treatment correlates with the increase width of the density of the support glass substrate. Therefore, if the increase value of the density of the support glass substrate is measured, the increase value of the Young's modulus of the support glass substrate can be easily estimated.

Preferably to 0.001-0.05 grams / cm ³ increases the density of the supporting glass substrate by the heat treatment, more preferably it is 0.004~0.03g / cm ³ is raised, 0.007~0.015g / cm It is particularly preferable to raise it by ³ . If the increase width of the density is too small, the increase width of the Young's modulus of the supporting glass substrate is also decreased, and there is a possibility that the significance of providing the heat treatment step is lost.

  The maximum temperature of the heat treatment is preferably (strain point of supporting glass substrate−100) ° C., (strain point of supporting glass substrate−50) ° C. or more, (strain point of supporting glass substrate−30) ° C. or more, supporting glass substrate (Strain point of supporting glass substrate + 10) ° C. or more, (strain point of supporting glass substrate + 20) ° C. or more, (strain point of supporting glass substrate + 30) ° C. or more, particularly (strain point of supporting glass substrate + 50 ) C or higher. If the maximum temperature of the heat treatment is too low, the heat treatment time for increasing the Young's modulus of the supporting glass substrate becomes unduly long, and the heat treatment efficiency tends to decrease. On the other hand, if the maximum temperature of the heat treatment is too high, the supporting glass substrate is likely to be thermally deformed. Therefore, the maximum temperature of the heat treatment is preferably (the strain point of the supporting glass substrate + 150) ° C. or less, and (the strain point of the supporting glass substrate + 120) ° C. or less.

  In the heat treatment step, it is preferable to lower the temperature from the maximum temperature of the heat treatment in order to safely take out the supporting glass substrate from the heat treatment furnace. The cooling rate is preferably 5 ° C./min or less, 4 ° C./min or less, 3 ° C./min or less, 2 ° C./min or less, 1 ° C./min or less, particularly 0.8 ° C./min or less. If the temperature lowering rate is too high, thermal strain tends to remain on the support glass substrate after the heat treatment step, and the support glass substrate may be damaged when the support glass substrate is taken out from the heat treatment furnace. On the other hand, if the temperature lowering rate is too slow, the heat treatment time for increasing the Young's modulus of the supporting glass substrate becomes unreasonably long, and the heat treatment efficiency tends to decrease. Therefore, the temperature decreasing rate is preferably 0.01 ° C./min or more, 0.05 ° C./min or more, 0.1 ° C./min or more, 0.2 ° C./min or more, particularly 0.5 ° C./min or more. .

  It is preferable to prepare a heat-treating setter larger than the size of the supporting glass substrate, place the molded supporting glass substrate on the heat-treating setter, and then subject it to a heat treatment step. If it does in this way, the temperature nonuniformity of a support glass substrate can be reduced in the case of heat processing. In addition, when the dimension of the setter for heat treatment is equal to or smaller than the dimension of the support glass substrate, a part of the support glass substrate is likely to protrude from the setter for heat treatment, and thermal deformation is likely to occur in the protruding portion.

  In the manufacturing method of the support glass substrate of this invention, it is preferable to reduce the curvature amount of a support glass substrate to 40 micrometers or less by heat processing. And in order to reduce the curvature amount of a support glass substrate, it is preferable to arrange | position a heat-resistant board | substrate above a support glass substrate, and to heat-process, holding a support glass substrate with the setter for heat processing and a heat-resistant substrate. As the heat resistant substrate, a mullite substrate, an alumina substrate, or the like can be used. Moreover, it is preferable to heat-process in the state which laminated | stacked the several support glass substrate. Thereby, the curvature amount of the support glass substrate laminated | stacked below the lamination | stacking is reduced appropriately by the mass of the support glass substrate laminated | stacked upwards. Furthermore, the heat treatment efficiency of the supporting glass substrate can be increased.

  It is preferable that the manufacturing method of the support glass substrate of this invention is equipped with the grinding | polishing process of grind | polishing the surface of a support glass substrate after a heat treatment process, and reducing a whole board thickness deviation to less than 2.0 micrometers. Various methods can be adopted as the polishing treatment method. The supporting glass substrate is polished while the supporting glass substrate and the pair of polishing pads are rotated together by sandwiching both surfaces of the supporting glass substrate with the pair of polishing pads. The method of processing is preferred. Further, the pair of polishing pads preferably have different outer diameters, and it is preferable to perform a polishing process so that a part of the supporting glass substrate protrudes from the polishing pad intermittently during polishing. This makes it easy to reduce the overall plate thickness deviation and to reduce the amount of warpage. In the polishing treatment, the polishing depth is not particularly limited, but the polishing depth is preferably 50 μm or less, 30 μm or less, 20 μm or less, particularly 10 μm or less. As the polishing depth is smaller, the productivity of the supporting glass substrate is improved.

  The surface of the support glass substrate is preferably polished so that the total thickness deviation (TTV) of the support glass substrate is less than 2.0 μm, 1 μm or less, particularly less than 0.1 to 1 μm. The surface of the supporting glass substrate is preferably polished so that the arithmetic average roughness Ra is 5 nm or less, 2 nm or less, 1.5 nm or less, 1 nm or less, 0.8 nm or less, particularly 0.5 nm or less. The smaller the overall plate thickness deviation (TTV) or the higher the surface accuracy, the easier it is to improve the processing accuracy. In particular, since the wiring accuracy can be increased, high-density wiring is possible. Further, the strength of the supporting glass substrate is improved, and the supporting glass substrate and the laminated substrate are hardly damaged. The “arithmetic average roughness Ra” can be measured by an atomic force microscope (AFM).

  The method for producing a supporting glass substrate of the present invention preferably includes a cutting and removing step of cutting and removing the peripheral portion of the supporting glass substrate after the heat treatment step. When a polishing step is employed after the heat treatment step, the supporting glass substrate is supported after the polishing step. It is further preferable to include a cutting and removing step of cutting and removing the peripheral portion of the glass substrate. In the heat treatment step, the amount of warpage tends to be larger in the peripheral portion than in the central portion of the supporting glass substrate. Therefore, if the peripheral portion of the supporting glass substrate is cut and removed after the heat treatment step, the amount of warpage of the supporting glass substrate can be reduced.

  When cutting and removing the peripheral portion of the supporting glass substrate, it is preferable to cut out the rectangular supporting glass substrate into a substantially disk shape or wafer shape. In this way, it becomes easy to apply to the manufacturing process of a semiconductor package. You may process into other shapes, for example, shapes, such as a rectangle, as needed. The roundness (excluding the notch portion) of the cut support glass substrate is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, and particularly preferably 0.03 mm or less. The smaller the roundness, the easier it is to apply to the semiconductor package manufacturing process. The “roundness (excluding the notch portion)” indicates a value obtained by subtracting the minimum value from the maximum value of the wafer diameter (excluding the notch portion).

  It is preferable that the manufacturing method of the support glass substrate of this invention is equipped with the notch process process which forms a notch part (alignment part) in a part of outer periphery of a support glass substrate after a cutting removal process. If it does in this way, it will become easy to fix a support glass board | substrate by making positioning members, such as a positioning pin, contact | abut to the notch part of a support glass board | substrate. As a result, the processing substrate and the supporting glass substrate can be easily aligned. In addition, if a notch part is formed also in a process board | substrate and a positioning member is contact | abutted, position alignment of a process board | substrate and a support glass substrate will become still easier.

  It is preferable that the manufacturing method of the support glass substrate of this invention is equipped with the chamfering process which chamfers with respect to the end surface (including the end surface of a notch part) of a support glass substrate after a cutting removal process. Thereby, it becomes easy to prevent the situation where it breaks from the end surface of a support glass substrate. For the chamfering process, a chamfering process using a grindstone with a groove, a chamfering process using acid etching such as hydrofluoric acid, or the like can be adopted.

  In the manufacturing method of the support glass substrate of this invention, it is preferable not to perform an ion exchange process with respect to a support glass substrate. When the ion exchange treatment is performed, the manufacturing cost of the supporting glass substrate increases, and it becomes difficult to reduce the overall thickness deviation (TTV) of the supporting glass substrate.

  The method for manufacturing a semiconductor package of the present invention includes a lamination process for producing a laminated substrate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, and a process for performing a processing process on the processed substrate of the laminated substrate. A supporting glass substrate is produced by the above-described method for producing a supporting glass substrate. The technical features of the method for manufacturing a semiconductor package of the present invention overlap with the technical features of the method for manufacturing a supporting glass substrate of the present invention. Therefore, in this specification, the detailed description of the overlapping part is abbreviate | omitted for convenience.

  In the semiconductor package manufacturing method of the present invention, it is preferable to provide an adhesive layer between the processed substrate and the supporting glass substrate. The adhesive layer is preferably a resin, for example, a thermosetting resin, a photocurable resin (particularly an ultraviolet curable resin), or the like. Moreover, what has the heat resistance which can endure the heat processing in the manufacturing process of a semiconductor package is preferable. Thereby, it becomes difficult to melt | dissolve an adhesive layer in the manufacturing process of a semiconductor package, and the precision of a process can be improved. In addition, in order to fix a process substrate and a support glass substrate easily, an ultraviolet curable tape can also be used as an adhesive layer.

  Furthermore, it is preferable to provide a release layer between the processed substrate and the supporting glass substrate, more specifically between the processed substrate and the adhesive layer. If it does in this way, it will become easy to peel a processed substrate from a support glass substrate, after performing predetermined processing processing to a processed substrate. Peeling of the processed substrate is preferably performed with irradiation light such as laser light from the viewpoint of productivity. As the laser light source, an infrared laser light source such as a YAG laser (wavelength 1064 nm) or a semiconductor laser (wavelength 780 to 1300 nm) can be used. In addition, a resin that decomposes when irradiated with an infrared laser can be used for the release layer. A substance that efficiently absorbs infrared rays and converts it into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment or the like can be added to the resin.

  The peeling layer is made of a material that causes “in-layer peeling” or “interfacial peeling” by irradiation light such as laser light. That is, when light of a certain intensity is irradiated, the bonding force between atoms or molecules in an atom or molecule disappears or decreases, and ablation or the like is caused to cause peeling. In addition, when the component contained in the release layer is released as a gas due to irradiation of irradiation light, the separation layer is released, and when the release layer absorbs light and becomes a gas, and its vapor is released, resulting in separation There is.

  In the semiconductor package manufacturing method of the present invention, it is preferable that the dimension of the processed substrate is larger than the dimension of the supporting glass substrate. Thereby, when laminating | stacking a process substrate and a support glass substrate, even when both center positions are spaced apart slightly, the edge part of a process substrate becomes difficult to protrude from a support glass substrate.

  It is preferable that the method for manufacturing a semiconductor package of the present invention further includes a transporting process for transporting the laminated substrate. Thereby, the processing efficiency of a processing process can be improved. The “conveying step” and the “processing step” are not necessarily performed separately, and may be performed simultaneously.

  In the method for manufacturing a semiconductor package of the present invention, the processing is preferably performed by wiring on one surface of the processed substrate or forming solder bumps on one surface of the processed substrate. In the method for manufacturing a semiconductor package of the present invention, warpage of the processed substrate is unlikely to occur during these processes, and thus these steps can be performed appropriately.

  In addition to the above, as a processing treatment, one surface of a processed substrate (usually the surface opposite to the supporting glass substrate) is mechanically polished, and one surface of the processed substrate (usually a supporting glass substrate) Either a process of dry-etching the surface on the opposite side or a process of wet-etching one surface of the processed substrate (usually the surface opposite to the supporting glass substrate) may be used. In the semiconductor package manufacturing method of the present invention, since the processed substrate is unlikely to warp, the processing can be appropriately performed.

  The present invention will be further described with reference to the drawings.

  FIG. 1 is a conceptual perspective view showing an example of a laminated substrate 1 according to the present invention. In FIG. 1, the laminated substrate 1 includes a supporting glass substrate 10 and a processed substrate 11. The support glass substrate 10 is adhered to the processed substrate 11 in order to prevent the processed substrate 11 from warping. A release layer 12 and an adhesive layer 13 are disposed between the support glass substrate 10 and the processed substrate 11. The peeling layer 12 is in contact with the supporting glass substrate 10, and the adhesive layer 13 is in contact with the processed substrate 11.

  As can be seen from FIG. 1, the laminated substrate 1 is laminated in the order of a supporting glass substrate 10, a release layer 12, an adhesive layer 13, and a processed substrate 11. Although the shape of the support glass substrate 10 is determined according to the processed substrate 11, in FIG. 1, the shape of the support glass substrate 10 and the processed substrate 11 is substantially disc shape. For the release layer 12, for example, a resin that decomposes when irradiated with a laser can be used. A substance that efficiently absorbs laser light and converts it into heat can also be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment and the like. The release layer 12 is formed by plasma CVD, spin coating by a sol-gel method, or the like. The adhesive layer 13 is made of a resin, and is applied and formed by, for example, various printing methods, inkjet methods, spin coating methods, roll coating methods, and the like. An ultraviolet curable tape can also be used. The adhesive layer 13 is removed by dissolution with a solvent or the like after the supporting glass substrate 10 is peeled from the processed substrate 11 by the peeling layer 12. The ultraviolet curable tape can be removed with a peeling tape after being irradiated with ultraviolet rays.

  FIG. 2 is a conceptual cross-sectional view showing a chip-first type manufacturing process of a fan-out type WLP. FIG. 2A shows a state in which the adhesive layer 21 is formed on one surface of the support member 20. A peeling layer may be formed between the support member 20 and the adhesive layer 21 as necessary. Next, as shown in FIG. 2B, a plurality of semiconductor chips 22 are pasted on the adhesive layer 21. At that time, the surface on the active side of the semiconductor chip 22 is brought into contact with the adhesive layer 21. Next, as shown in FIG. 2C, the semiconductor chip 22 is molded with a resin sealing material 23. The sealing material 23 is made of a material having little dimensional change after compression molding and little dimensional change when forming a wiring. Subsequently, as shown in FIGS. 2D and 2E, after separating the processed substrate 24 on which the semiconductor chip 22 is molded from the support member 20, the substrate is bonded and fixed to the support glass substrate 26 through the adhesive layer 25. Let At that time, the surface of the processed substrate 24 opposite to the surface on which the semiconductor chip 22 is embedded is disposed on the supporting glass substrate 26 side. In this way, the laminated substrate 27 can be obtained. In addition, you may form a peeling layer between the contact bonding layer 25 and the support glass substrate 26 as needed. Furthermore, after transporting the obtained laminated substrate 27, as shown in FIG. 2 (f), after forming the wiring 28 on the surface of the processed substrate 24 on the side where the semiconductor chip 22 is embedded, a plurality of solder bumps 29 are formed. Form. Finally, after separating the processed substrate 24 from the support glass substrate 26, the processed substrate 24 is cut for each semiconductor chip 22 and used for a subsequent packaging process. Further, the supporting glass substrate 26 is subjected to reuse after being subjected to acid treatment with HF, HCl or the like, or alkali treatment with NaOH, KOH or the like (FIG. 2 (g)).

  Hereinafter, the present invention will be described based on examples. The following examples are merely illustrative. The present invention is not limited to the following examples.

  Tables 1 to 5 show examples of the present invention (sample Nos. 1, 2, 4, 5, 7, 8, 10, 11, 13, 14) and comparative examples (samples No. 3, 6, 9, 12, 15).

Sample no. The glass substrate which concerns on 1-3 (glass substrate before heat processing) was produced. First, as a glass composition, by mass%, SiO ₂ 65.6%, Al ₂ O ₃ 8.0%, B ₂ O ₃ 9.1%, Na ₂ O 12.8%, CaO 3.1%, ZnO Glass raw materials were prepared and mixed so as to contain 0.9%, SnO ₂ 0.3%, and Sb ₂ O ₃ 0.1% to obtain a glass batch, which was then supplied to a glass melting furnace at 1550 ° C. Then, the obtained molten glass was clarified and stirred, and then supplied to a molding apparatus of an overflow down draw method to form a sheet thickness of 0.7 mm. Thereafter, the obtained glass substrate was cut into a rectangular shape. In addition, when the strain point was measured by the method as described in ASTM C336 about the obtained glass substrate, it was 519 degreeC.

Sample no. Glass substrates (glass substrates before heat treatment) according to 4 to 6 were produced. First, as a glass composition, SiO ₂ 61.63%, Al ₂ O ₃ 18.0%, B ₂ O ₃ 0.5%, Na ₂ O 14.5%, K ₂ O 2.01% by mass%. , MgO 3.0%, BaO 0.01%, SnO ₂ 0.35% are mixed and mixed to obtain a glass batch, which is then fed to a glass melting furnace at 1700 ° C. After melting, the obtained molten glass was clarified and stirred, and then supplied to a molding apparatus of an overflow down draw method to form a plate thickness of 1.05 mm. Thereafter, the obtained glass substrate was cut into a rectangular shape. In addition, it was 567 degreeC when the strain point was measured by the method of ASTM C336 about the obtained glass substrate.

Sample no. Glass substrates (glass substrates before heat treatment) according to 7 to 9 were produced. First, as a glass composition, by mass%, SiO ₂ 65.8%, Al ₂ O ₃ 8.0%, B ₂ O ₃ 3.7%, Na ₂ O 18.1%, CaO 3.2%, ZnO A glass raw material was prepared and mixed so as to contain 0.9% and SnO ₂ 0.3% to obtain a glass batch, which was then fed to a glass melting furnace and melted at 1300 ° C., and then the obtained melt The glass was clarified and stirred, and then supplied to an overflow down-draw molding apparatus so as to have a thickness of 0.7 mm. Thereafter, the obtained glass substrate was cut into a rectangular shape. In addition, it was 530 degreeC when the strain point was measured about the obtained glass substrate by the method of ASTMC336.

Sample no. 10 to 12 glass substrates (glass substrates before heat treatment) were produced. First, as a glass composition, by mass%, SiO ₂ 65.7%, Al ₂ O ₃ 8.0%, B ₂ O ₃ 2.1%, Na ₂ O 19.8%, CaO 3.2%, ZnO Glass raw materials were prepared and mixed to contain 0.9% and SnO ₂ 0.3% to obtain a glass batch, which was then fed to a glass melting furnace and melted at 1700 ° C. The glass was clarified and stirred, and then supplied to an overflow down-draw molding apparatus so that the thickness was 1.05 mm. Thereafter, the obtained glass substrate was cut into a rectangular shape. In addition, it was 515 degreeC when the strain point was measured about the obtained glass substrate by the method of ASTMC336.

Sample no. Glass substrates (glass substrates before heat treatment) according to 13 to 15 were produced. First, as a glass composition, SiO ₂ 65.3%, Al ₂ O ₃ 8.0%, Na ₂ O 22.3%, CaO 3.2%, ZnO 0.9%, SnO ₂ 0.0% by mass. After preparing and mixing the glass raw material so as to contain 3% and obtaining a glass batch, the glass raw material is supplied to a glass melting furnace and melted at 1700 ° C. Then, the obtained molten glass is clarified and stirred, It was supplied to a molding apparatus using the overflow downdraw method and molded so that the plate thickness was 1.05 mm. Thereafter, the obtained glass substrate was cut into a rectangular shape. In addition, when the strain point was measured by the method of ASTM C336 about the obtained glass substrate, it was 497 degreeC.

  Subsequently, a setter for heat treatment larger than the size of the glass substrate after cutting is prepared, a glass substrate is placed on the setter for heat treatment, and a heat resistant substrate is further placed on the glass substrate, and then the lamination is performed. The substrate was put into an electric furnace. Next, the temperature inside the electric furnace was raised to the maximum temperature described in the table, and the electric furnace was cooled at the rate of temperature reduction described in the table after being held at the maximum temperature for the time described in the table. Sample No. Nos. 3, 6, 9, 12, and 15 are not subjected to the heat treatment.

  About the obtained glass substrate, the Young's modulus and the rigidity were measured with a commercially available Young's modulus and rigidity measuring device (Nippon Techno-plus free resonance elastic modulus measuring device JE-RT3).

  Further, the density of the obtained glass substrate was measured by Archimedes method.

  As is apparent from Tables 1 to 5, sample No. In 1, 2, 4, 5, 7, 8, 10, 11, 13, and 14, the Young's modulus could be increased by a predetermined heat treatment.

  Further, after the heat-treated glass substrate (Sample Nos. 1, 2, 4, 5, 7, 8, 10, 11, 13, 14: overall plate thickness deviation of about 4.0 μm) was cut into φ300 mm, Both surfaces were polished by a polishing apparatus. Specifically, both surfaces of the glass substrate were sandwiched between a pair of polishing pads having different outer diameters, and both surfaces of the glass substrate were polished while rotating the glass substrate and the pair of polishing pads together. During the polishing process, control was sometimes performed so that a part of the glass substrate protruded from the polishing pad. The polishing pad was made of urethane, the average particle size of the polishing slurry used for the polishing treatment was 2.5 μm, and the polishing rate was 15 m / min. About each obtained glass substrate after grinding | polishing, the whole board thickness deviation and curvature amount were measured by Bow / Warp measuring apparatus SBW-331ML / d by Kobelco Kaken. As a result, the overall plate thickness deviation was less than 1.0 μm, and the warpage amount was 35 μm or less.

1, 27 Laminated substrates 10 and 26 Support glass substrates 11 and 24 Processed substrate 12 Release layers 13, 21 and 25 Adhesive layer 20 Support member 22 Semiconductor chip 23 Sealing material 28 Wiring 29 Solder bump

Claims (14)

In the manufacturing method of the supporting glass substrate for supporting the processed substrate,
A method for producing a supporting glass substrate, comprising: a forming step for forming the supporting glass substrate; and a heat treatment step for increasing the Young's modulus of the supporting glass substrate by heat-treating the formed supporting glass substrate.   2. The method for producing a supporting glass substrate according to claim 1, wherein the supporting glass substrate after molding is heat-treated so that the Young's modulus of the supporting glass substrate falls within a management target range.   The method for producing a supporting glass substrate according to claim 1 or 2, wherein the maximum temperature of the heat treatment is higher than (strain point of supporting glass substrate-100) ° C.   The method for producing a supporting glass substrate according to any one of claims 1 to 3, wherein the temperature of the heat treatment is lowered at a rate of 5 ° C / min or less after reaching the maximum temperature of the heat treatment.   The method for producing a supporting glass substrate according to any one of claims 1 to 4, wherein the amount of warpage of the supporting glass substrate is reduced to 40 µm or less by heat treatment.   6. A heat-treating setter larger than the size of the supporting glass substrate is prepared, and the molded supporting glass substrate is placed on the heat-treating setter, and then subjected to a heat treatment step. A method for producing a support glass substrate according to claim 1.   The method for producing a supporting glass substrate according to any one of claims 1 to 6, wherein the supporting glass substrate is formed so that the plate thickness is 400 µm or more and less than 2 mm.   The method for producing a supporting glass substrate according to any one of claims 1 to 7, wherein the supporting glass substrate is formed by an overflow down draw method.   The support according to any one of claims 1 to 8, further comprising a polishing step of polishing the surface of the supporting glass substrate after the heat treatment step to reduce the total thickness deviation (TTV) to less than 2.0 µm. A method for producing a glass substrate.   The method for producing a supporting glass substrate according to any one of claims 1 to 9, further comprising a cutting and removing step of cutting and removing a peripheral portion of the supporting glass substrate after the heat treatment step. A lamination process for producing a laminated substrate comprising at least a processed substrate and a supporting glass substrate for supporting the processed substrate;
And a processing step for performing processing on the processed substrate of the multilayer substrate,
A method for producing a semiconductor package, wherein the supporting glass substrate is produced by the method for producing a supporting glass substrate according to claim 1.   The method of manufacturing a semiconductor package according to claim 11, wherein the processed substrate includes a semiconductor chip molded with at least a sealing material.   The method of manufacturing a semiconductor package according to claim 11 or 12, wherein the processing includes processing of wiring on one surface of the processing substrate.   The method of manufacturing a semiconductor package according to claim 11, wherein the processing includes a process of forming a solder bump on one surface of the processed substrate.