JP2019050274A - Semiconductor device, electronic device, and method for manufacturing semiconductor device - Google Patents

Abstract

To provide a semiconductor device having high reliability, an electronic device, and a method for manufacturing a semiconductor device.SOLUTION: A semiconductor device includes: a semiconductor layer having a copper through electrode penetrating in a thickness direction; a copper electrode that is provided on one surface side of the semiconductor layer at which a first end of the through electrode is located and that has an opening encompassing the first end in plan view; and a metal pillar made of nickel or nickel alloy, with one end thereof inserted into an opening of the copper electrode on the one surface side of the semiconductor layer, having a planar area larger than that of the through electrode and connected to the through electrode and the copper electrode, the other end of the metal pillar projecting from alloy produced by the copper of the copper electrode and tin of a solder in a state in which the solder containing tin is connected to the copper electrode and the metal pillar.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a semiconductor device, an electronic device, and a method of manufacturing a semiconductor device.

  A semiconductor device comprising a semiconductor chip and a wiring substrate on which the semiconductor chip is flip-chip mounted, wherein the semiconductor chip comprises an electrode pad and a copper pillar formed on the electrode pad. There is.

  The wiring board has a connection terminal made of a metal containing copper, and the copper pillar and the connection terminal are connected via a solder layer containing tin, and the copper pillar and the solder are connected. A nickel layer is formed only between one layer and between the solder layer and the connection terminal, and the minimum value of the thickness of the solder layer is 20 μm or less (see, for example, Patent Document 1).

JP, 2013-211511, A

  By the way, even if the nickel layer is provided between the copper pillar and the solder layer as described above, when a current flows between the copper pillar and the solder layer, an alloy layer of copper of the copper pillar and tin of the solder layer is generated. Since the alloy layer has higher resistance than the copper pillars and the solder layer, current flow causes Joule heat, alloying between copper and tin progresses further, and volume change due to transition from tin to copper-tin alloy. There is a possibility that a Kirkendall void may occur.

  When such a Kirkendall void occurs, the temperature of the solder layer rises due to the increase of the current density in the solder layer, and there is a possibility that the solder layer may be disconnected due to the melting of the solder layer or the growth of the Kirkendall void. The disconnection of the solder layer leads to the decrease in the reliability of the semiconductor device.

  Therefore, it is an object of the present invention to provide a highly reliable semiconductor device, an electronic device, and a method of manufacturing the semiconductor device.

  In the semiconductor device according to the embodiment of the present invention, a semiconductor layer having a copper through electrode penetrating in the thickness direction and one side of the semiconductor layer on which the first end of the through electrode is located are provided A copper electrode having an opening that encloses the first end in a visual sense, and one end of the opening of the copper electrode on one side of the semiconductor layer is inserted, and has a larger planar area than the through electrode, A metal pillar made of nickel or a nickel alloy, connected to the through electrode and the copper electrode, in which a solder containing tin is connected to the copper electrode and the metal pillar, and the copper and the copper of the copper electrode And a metal pillar whose other end protrudes from the alloy produced by the tin of the solder.

  It is possible to provide a highly reliable semiconductor device, an electronic device, and a method of manufacturing a semiconductor device.

FIG. 2 is a view showing a cross-sectional structure of an electronic device 200 including the semiconductor device 100. FIG. 2 is a view showing a cross-sectional structure of a semiconductor device 100. FIG. 6 is a view showing an alloy layer 122G generated around the copper electrode 122 of the semiconductor device 100. FIG. 7 is a diagram showing a manufacturing process of the semiconductor device 100. FIG. 7 is a diagram showing a manufacturing process of the semiconductor device 100. FIG. 7 is a diagram showing a manufacturing process of the semiconductor device 100. FIG. 7 is a diagram showing a manufacturing process of the semiconductor device 100. FIG. 7 is a diagram showing a manufacturing process of the semiconductor device 100. FIG. 7 is a diagram showing a manufacturing process of the semiconductor device 100. FIG. 7 is a diagram showing a manufacturing process of the semiconductor device 100. FIG. 7 is a diagram showing a manufacturing process of the semiconductor device 100. It is a figure showing semiconductor device 100M of a modification of an embodiment.

  Hereinafter, embodiments in which the semiconductor device, the electronic device, and the method for manufacturing a semiconductor device of the present invention are applied will be described.

Embodiment
FIG. 1 is a view showing a cross-sectional structure of an electronic device 200 including the semiconductor device 100. As shown in FIG. FIG. 2 is a view showing a cross-sectional structure of the semiconductor device 100. As shown in FIG. 1 and 2 show a common cross section. Moreover, in the following, for convenience of description, although it demonstrates using the vertical relationship in a figure, it does not represent a universal vertical relationship.

  The electronic device 200 includes the substrate 10, the semiconductor chip 20, and the semiconductor device 100. Here, although the electronic device 200 is described as including the semiconductor chip 20, the semiconductor device 20 may not be included.

  The substrate 10 has a substrate body 11 and an electrode 12. The substrate body 11 is, for example, a wiring substrate of the FR-4 (Flame Retardant type 4) standard, and may be a multilayer substrate having an inner layer. An electrode 12 is provided on the top surface of the substrate body 11. The electrode 12 has a configuration in which a copper plating layer 12A and a nickel layer 12B are stacked.

  The electrode 12 of the substrate 10 is connected to the nickel pillar 130 and the electrode 122 of the semiconductor chip 20 by the solder 13. The solder 13 is a so-called lead-free solder containing tin, silver and copper.

  The semiconductor chip 20 has a chip body 21 including an IC (Integrated Circuit: integrated circuit) and the like manufactured by the semiconductor manufacturing method, and an electrode 22 provided on the lower surface of the chip body 21. The electrode 22 has a structure in which aluminum, titanium, copper, and nickel are stacked from the tip body 21 side. The semiconductor chip 20 is connected to the semiconductor device 100 by the electrode 22 being connected to the copper pillar 110 of the semiconductor device 100 through the solder 23.

  The semiconductor device 100 includes a silicon layer 101, a copper pillar 110, a lower wiring layer 121, an electrode 122, a nickel pillar 130, and a passivation film 140.

  The silicon layer 101 is obtained by singulating a silicon wafer, and a silicon oxide layer 101A is provided in the lower part. The silicon layer 101 is an example of a semiconductor layer. In the silicon layer 101, copper pillars 110 are filled in the four through holes penetrating in the thickness direction. Here, a mode in which a circuit such as an IC is not formed in the silicon layer 101 will be described.

  The copper pillar 110 is a cylindrical member formed by copper plating, and is provided penetrating the silicon layer 101 in the thickness direction (vertical direction in the drawing). The copper pillar 110 is an example of a through electrode.

  At the upper end of the copper pillar 110, a nickel layer 110A is provided. The nickel layer 110A is provided to protect the interface of the upper end of the copper pillar 110. The copper pillar 110 and the nickel layer 110 </ b> A are provided to electrically connect the substrate 10 and the semiconductor chip 20.

  For example, the copper pillar 110 and the nickel layer 110A form a resist on the silicon layer 101 to the same height as the upper surface of the nickel layer 110A, and the four through holes penetrating in the longitudinal direction in the drawing are formed in the resist and the silicon layer 101. After forming and filling copper and nickel in a through-hole by plating process, it can produce by removing a resist. The copper pillar 110 and the nickel layer 110 </ b> A are provided to realize an electrical connection between the substrate 10 and the semiconductor chip 20.

  The lower wiring layer 121 is provided to electrically connect the four copper pillars 110 and the two nickel pillars 130 on the lower surface of the silicon layer 101. The lower wiring layer 121 has a structure in which a titanium layer 121A, a copper layer 121B, and a copper plating layer 121C are laminated in order from the lower surface of the silicon layer 101. The lower wiring layer 121 is covered with the silicon layer 101 and the passivation film 140. The passivation film 140 is made of, for example, a photosensitive polyimide resin.

  The electrode 122 is provided under the lower wiring layer 121. The electrode 122 is connected to the electrode 12 of the substrate 10 through the solder 13. The electrode 122 has a configuration in which a titanium layer 122A, a copper layer 122B, a copper plating layer 122C, and a nickel plating layer 122D are sequentially stacked from the upper side to the lower side where the lower wiring layer 121 is located. In addition, although the boundary line is shown between the copper layer 122B and the copper plating layer 122C, in actuality, they are integrated into one copper layer.

  The nickel pillars 130 are provided in two through holes 123 penetrating the lower wiring layer 121 and the electrode 122 in the longitudinal direction (thickness direction). The two through holes 123 are formed to expose the lower end of the central two of the four copper pillars 110 arranged in the lateral direction. The nickel pillar 130 is an example of a metal pillar.

  The through hole 123 is cylindrical, has a diameter larger than the cylindrical shape of the two copper pillars 110, and is arranged such that the copper pillar 110 is accommodated in the circle of the through hole 123 in plan view. . The nickel pillars 130 are filled in the two through holes 123, and the upper ends of the nickel pillars 130 are directly connected to the lower ends of the copper pillars 110.

  Therefore, the nickel pillar 130 has a cylindrical shape, the diameter of the nickel pillar 130 is larger than the diameter of the copper pillar 110, and the circular shape of the copper pillar 110 fits inside the circular shape of the nickel pillar 130 in plan view Be arranged). The reason will be described later.

  In addition, the nickel pillar 130 extends further downward than the two through holes 123 of the lower wiring layer 121 and the electrode 122. The length of the nickel pillar 130 (length along the central axis of the cylindrical shape) is set as follows. Here, it demonstrates using FIG. FIG. 3 is a view showing an alloy layer 122 G generated around the copper electrode 122 of the semiconductor device 100. The solder 13 is also shown in FIG.

  When current flows through the copper pillar 110 and the nickel pillar 130, an alloy layer 122G of the electrode 122 and the solder 13 is generated. The alloy layer 122G is an alloy layer 122G1 of copper of the electrode 122 (copper contained in the copper layer 122B and the copper plating layer 122C) and tin of the solder 13 and nickel of the electrode 122 (nickel contained in the nickel plating layer 122D) And an alloy layer 122G2 of the solder 13 with tin. The alloy layer 122G1 is an alloy of copper and tin, and the alloy layer 122G2 is an alloy of nickel and tin.

  Since the resistance value of the alloy layer 122G1 which is an alloy of copper and tin is higher than the resistance values of the copper pillar 110, the solder 13 and the nickel pillar 130, Joule heat is generated by the flow of current and the alloy layer 122G1 grows. There is a fear.

  In the semiconductor device 100, the nickel pillar 130 having a diameter larger than that of the copper pillar 110 is directly connected to the copper pillar 110, and the copper pillar 110 is disposed so as to be enclosed in a circle of the nickel pillar 130 in plan view. . That the diameter of the nickel pillar 130 is larger than that of the copper pillar 110 means that the planar area of the nickel pillar 130 is larger than the planar area of the copper pillar 110. In the case of a cylindrical shape, the planar area is the area of a circular surface located at both ends.

  Therefore, even if current flows through the current path formed by the copper pillar 110 and the nickel pillar 130 in the process of using the semiconductor device 100, the electrical connection state between the copper pillar 110 and the nickel pillar 130 does not change. The current path is secured. Even if the entire copper layer 122B and the copper plating layer 122C become an alloy of copper and tin (even if the entire copper layer 122B and the copper plating layer 122C are included in the alloy layer 122G1), copper The current path between the pillars 110 and the nickel pillars 130 is secured.

  On the other hand, the electrical connection between the nickel pillar 130 and the solder 13 may change when the alloy layer 122G1 grows downward. If the alloy layer 122G1, which is an alloy of copper and tin, intervenes between the nickel pillar 130 and the solder 13, a Kirkendall void which may be generated by Joule heat generated in the alloy layer 122G1 causes the nickel pillar 130 and the solder to be separated. There is a risk that the electrical connection between 13 and 14 may be lost.

  Therefore, in the semiconductor device 100, the maximum size when the alloy layer 122G1 is grown is determined from the copper content in the copper layer 122B and the copper plating layer 122C, the current density of the current flowing through the nickel pillar 130 and the solder 13, etc. I'm calculating. Then, even if the alloy layer 122G1 maximizes the length of the cylindrical shape central axis direction (longitudinal direction in the figure) of the nickel pillar 130, the nickel pillar 130 protrudes downward relative to the alloy layer 122G1 and directly to the solder 13. It is set to such a length that the connection state is maintained. The length of the nickel pillar 130 is a length between one end (upper end in the figure) and the other end (lower end in the figure).

  Since the size of the alloy layer 122G1 saturates at a certain size, the size to be saturated is determined as the maximum size so that the connection between the nickel pillar 130 and the solder 13 is secured until the end of the product life of the semiconductor device 100. There is.

  In addition, although an alloy layer 130G of the nickel of the nickel pillar 130 and the tin of the solder 13 may occur on the surface of the nickel pillar 130, the resistance value of the alloy of nickel and tin is sufficiently low. There is no problem. Therefore, the alloy layer 130G does not adversely affect the electrical connection between the nickel pillar 130 and the solder 13.

  As described above, according to the embodiment, the nickel pillar 130 having a larger diameter than the copper pillar 110 is directly connected to the copper pillar 110, and the copper pillar 110 is included in a circle of the nickel pillar 130 in a plan view. Are arranged to Furthermore, the nickel pillar 130 has a length such that the lower end protrudes from the alloy layer 122G1 even when the alloy layer 122G1 is grown to the maximum size.

  Therefore, even if current flows through the current path formed by the copper pillar 110 and the nickel pillar 130 in the process of using the semiconductor device 100, the electrical connection state between the copper pillar 110 and the nickel pillar 130 does not change. The current path is secured.

  Therefore, the semiconductor device 100 with high reliability and the electronic device 200 including the semiconductor device 100 can be provided.

  Next, a method of manufacturing the semiconductor device 100 will be described with reference to FIGS. 4 to 11. 4 to 11 illustrate the manufacturing process of the semiconductor device 100. FIG.

  First, as shown in FIG. 4A, a structure 100A1 is prepared in which the copper pillar 110 is penetrated through the silicon layer 101 provided with the silicon oxide layer 101A in the lower part and the nickel layer 110A is provided on the upper end of the copper pillar 110. Do.

  Next, a titanium layer 121A1 and a copper layer 121B1 are formed on the lower surface of the structure 100A1 by a sputtering method, and a structure 100A2 shown in FIG. 4B is manufactured.

  Next, a photoresist 150A is applied to the lower surface of the copper layer 121B1 of the structure 100A2, exposed and patterned to remove portions under the four copper pillars 110 and expose the copper layer 121B1. A structure 100A3 shown in FIG. 5A is manufactured.

  Next, a copper plating layer 121C1 is formed on the lower surface of the copper layer 121B1 of the structure 100A3 to fabricate a structure 100A4 shown in FIG. 5 (B). This process may be performed by applying a voltage to the copper pillar 110 and performing electrolytic plating.

  Next, the photoresist 150A is removed from the structure 100A4 by wet etching, and a portion of the titanium layer 121A1 and the copper layer 121B1 that protrudes laterally beyond the copper plating layer 121C1 is removed by etching. Accordingly, the titanium layer 121A1 and the copper layer 121B1 illustrated in FIG. 5B become the titanium layer 121A2 and the copper layer 121B2, and the structure 100A5 illustrated in FIG. 6A is manufactured. Note that the etching treatment for forming the titanium layer 121A2 and the copper layer 121B2 may be performed by, for example, wet etching treatment using a mask or RIE (Reactive Ion Etching) treatment. In the case of the wet etching process, a solution for etching copper and a solution for etching titanium may be used properly.

  Next, a passivation film 140A1 covering the side surfaces of the titanium layer 121A2, the copper layer 121B2, and the copper plating layer 121C1 and the lower surface of the copper plating layer 121C1 is formed under the structural body 100A5, as shown in FIG. A structure 100A6 shown in FIG. The passivation film 140A1 is, for example, a photosensitive polyimide resin.

  Next, a portion of the passivation film 140A1 located below the center two of the four copper pillars 110 is opened to form a structure 100A7 having a passivation film 140A2 shown in FIG. 7A. Make The passivation film 140A2 has an opening 140A2A. The opening 140A2A is manufactured by exposing and developing a portion where the opening 140A2A is desired to be formed on the passivation film 140A1 of the structure 100A6 shown in FIG.

  Next, a titanium layer 122A1 and a copper layer 122B1 are sequentially formed in the passivation film 140A2 and the opening 140A2A by sputtering, whereby a structure 100A8 shown in FIG. 7B is manufactured. The titanium layer 122A1 and the copper layer 122B1 have a cross-sectional shape having a level difference that matches the opening 140A2A. The portion of the copper layer 122B1 that is recessed upward in accordance with the opening 140A2A is a recess 122B1B.

  Next, a photoresist is applied to the lower surface of the portion other than the concave portion 122B1B of the copper layer 122B1 of the structure 100A8, and as shown in FIG. 8A, patterning is performed to a range slightly wider than the opening 140A2A. By removing, a structure 100A9 in which a photoresist 150B is formed on the lower surface of the copper layer 122B1 is produced. The photoresist 150B has an opening 150B1. The opening 150B1 is formed by exposing and patterning a photoresist.

  Next, electroplating is performed while applying a voltage to the upper portion of the copper pillar 110 to form a copper plating layer 122C1 and a nickel plating layer 122D1, thereby producing a structure 100A10 shown in FIG. 8B.

  Next, the structure 100A10 is etched to remove the photoresist 150B, and the titanium layer 122A1 and the copper layer 122B1 under the passivation film 140A2 are removed to obtain the structure shown in FIG. 9A. Create a body 100A11. In this step, a portion of the titanium layer 122A1 and the copper layer 122B1 shown in FIG. 8B outside the copper plating layer 122C1 and the nickel plating layer 122D1 in the lateral direction is removed. Therefore, even if it is the part under the passivation film 140A2 among the titanium layer 122A1 and the copper layer 122B1 shown in FIG. 8B, the part included in the width of the copper plating layer 122C1 and the nickel plating layer 122D1 is removed It is left without being done.

  By this treatment, the titanium layer 122A1 and the copper layer 122B1 shown in FIG. 8B become a titanium layer 122A2 and a copper layer 122B2. The photoresist 150B may be removed by wet etching, and the etching for forming the titanium layer 122A2 and the copper layer 122B2 may be wet etching using a mask or RIE. In the case of the wet etching process, a solution for etching copper and a solution for etching titanium may be used properly.

  Next, a photoresist is applied to the lower portion of the structure 100A11, exposed and patterned to remove the region where the two nickel pillars 130 are to be formed until the nickel plating layer 122D1 is exposed, as shown in FIG. A structure 100A12 on which a photoresist 150C shown in B) is formed is manufactured. The photoresist 150C has through holes 150C1 corresponding to the two nickel pillars 130. The through holes 150C1 may be formed by, for example, an etching process combining wet etching using a mask and an RIE process, or an etching process using an RIE process.

  Next, two through holes 150C1 of the titanium layer 121A2, the copper layer 121B2, the copper plating layer 121C1, the titanium layer 122A2, the copper layer 122B2, the copper plating layer 122C1, and the nickel plating layer 122D1 of the structure 100A12. By removing the portion existing in the etching process by etching, a structure 100A13 shown in FIG. 10A is manufactured. This etching process may be performed, for example, as an etching process combining wet etching process using a mask and RIE process, or an etching process using RIE process. In the case of the wet etching process, a solution for etching copper, a solution for etching titanium, and a solution for etching nickel may be used properly.

  By this etching process, the titanium layer 121A2, the copper layer 121B2, and the copper plating layer 121C1 become the titanium layer 121A, the copper layer 121B, and the copper plating layer 121C, respectively. The titanium layer 122A2, the copper layer 122B2, the copper plating layer 122C1, and the nickel plating layer 122D1 become the titanium layer 122A, the copper layer 122B, the copper plating layer 122C, and the nickel plating layer 122D, respectively.

  Further, through the process, through holes 150C2 are formed in the titanium layer 121A, the copper layer 121B, the copper plating layer 121C, the titanium layer 122A, the copper layer 122B, the copper plating layer 122C, and the nickel plating layer 122D. The through holes 150C2 reach from the photoresist 150C to the lower surfaces of the two copper pillars 110 and the silicon oxide layer 101A.

  Next, a voltage is applied to the central two of the four copper pillars 110 to perform electrolytic plating, thereby filling nickel plating in the two through holes 150C2 of the structure 100A13, A nickel pillar 130 is formed. By this processing, a structure 100A14 shown in FIG. 10B is manufactured.

  Finally, the structure 100A14 is etched to remove the photoresist 150C, whereby the semiconductor device 100 shown in FIG. 11 is completed.

  In addition, although the form which provided the copper pillar 110 in the silicon layer 101 was demonstrated above, it may replace with the copper pillar 110, and the penetration via | veer made from copper may be provided. In this case, the nickel pillar 130 may be directly connected to the lower surface of the copper through via. The area (planar area) and positional relationship in a plane between the copper through via and the nickel pillar 130 may be similar to those of the copper pillar 110 and the nickel pillar 130 described above.

  Further, instead of the copper pillar 110, a copper pad or a copper wiring may be provided on the lower surface of the silicon layer 101. In this case, the nickel pillar 130 may be directly connected to the lower surface of the copper pad or the terminal of the copper wiring. The planar area and the positional relationship between the copper pad or the copper wiring terminal and the nickel pillar 130 may be the same as those of the copper pillar 110 and the nickel pillar 130 described above.

  Further, although the embodiment using the nickel pillar 130 has been described above, instead of the nickel pillar 130, a pillar made of an alloy containing nickel may be used. As an alloy containing nickel, an alloy obtained by adding gold (Au), platinum (Pt), palladium (Pd) or the like to nickel can be used for the purpose of improving solderability. The addition amount of these metals is about 10%.

  In the above, the embodiment in which the circuit is not formed in the silicon layer 101 has been described, but a circuit such as an IC may be formed in the silicon layer 101. FIG. 12 is a diagram showing a semiconductor device 100M according to a modification of the embodiment. In FIG. 12, while simplifying each component, the part corresponding to one copper pillar 110M is expanded and shown.

  The semiconductor device 100M includes a silicon layer 101M, a copper pillar 110M, an electrode 122M, and a nickel pillar 130M. The copper pillar 110M, the electrode 122M, and the nickel pillar 130M are the same as the copper pillar 110, the electrode 122, and the nickel pillar 130 in FIG. 2, respectively. Here, the lower wiring layer 121 and the passivation film 140 shown in FIG. 2 are omitted.

  The silicon layer 101M includes the circuit 101M1 inside and the electrode 101M2 on the lower surface. The electrode 101M2 is made of, for example, copper plating, and a nickel layer may be formed on the lower surface. The circuit 101M1 is electrically connected to the copper pillar 110M.

  The upper end side of the nickel pillar 130M penetrates the electrode 122M and is connected to the electrode 101M2 through the pad 160M. The lower side than the copper electrode 122M of the nickel pillar 130M and the electrode 122M are connected to the same solder as the solder 13 shown in FIG.

  As described above, also in the semiconductor device 100M in which the silicon layer 101M includes the circuit 101M1, the nickel pillar 130M penetrating the electrode 122M and the copper pillar 110M may be connected. The nickel pillar 130M and the copper pillar 110M are connected via the electrode 101M2 and the pad 160M. The relationship between the planar areas of the nickel pillars 130M and the copper pillars 110M and the positional relationship between the nickel pillars 130M and the copper pillars 110M in plan view are the same as those of the nickel pillars 130 and the copper pillars 110 described with reference to FIGS. is there.

Although the semiconductor device, the electronic device, and the method of manufacturing the semiconductor device according to the exemplary embodiments of the present invention have been described above, the present invention is not limited to the specifically disclosed embodiments. Various modifications and variations are possible without departing from the scope of the claims.
Further, the following appendices will be disclosed regarding the above embodiment.
(Supplementary Note 1)
A semiconductor layer having a copper through electrode penetrating in a thickness direction;
A copper electrode having an opening which is provided on one surface side of the semiconductor layer on which the first end of the through electrode is positioned and which includes the first end in a plan view;
Nickel or nickel alloy having one end inserted into the opening of the copper electrode on one side of the semiconductor layer and having a larger planar area than the through electrode and connected to the through electrode and the copper electrode A metal pillar made of tin, wherein a solder containing tin is connected to the copper electrode and the metal pillar, and a metal pillar whose other end protrudes from an alloy produced by copper of the copper electrode and tin of the solder; Including semiconductor devices.
(Supplementary Note 2)
The length between the one end and the other end of the metal pillar is a length that protrudes from the alloy grown and maximized when a current flows in the current path constructed by the through electrode and the metal pillar. The semiconductor device according to claim 1, which is
(Supplementary Note 3)
The semiconductor device according to claim 1, wherein the through electrode is a copper pillar, a through via made of copper, a pad made of copper, or a wiring made of copper.
(Supplementary Note 4)
The semiconductor device according to any one of appendices 1 to 3, wherein the metal pillar is arranged to include the copper electrode in a plan view.
(Supplementary Note 5)
The semiconductor layer is
Circuit,
An electrode provided on the one surface, connected to the circuit and connected to the one end of the through electrode;
The semiconductor device according to any one of appendices 1 to 4, wherein the through electrode is connected to the metal pillar via the electrode.
(Supplementary Note 6)
A semiconductor device,
A substrate having an electrode;
An electronic device comprising: tin; and a solder for connecting the semiconductor device and an electrode of the substrate;
The semiconductor device is
A semiconductor layer having a copper through electrode penetrating in a thickness direction;
A copper electrode having an opening which is provided on one surface side of the semiconductor layer on which the first end of the through electrode is positioned and which includes the first end in a plan view;
Nickel or nickel alloy having one end inserted into the opening of the copper electrode on one side of the semiconductor layer and having a larger planar area than the through electrode and connected to the through electrode and the copper electrode A metal pillar, the other end of which protrudes from an alloy produced by copper of the copper electrode and tin of the solder in a state where the copper electrode and the metal pillar are connected to the electrode of the substrate by the solder An electronic device having a pillar.
(Appendix 7)
Forming a through electrode penetrating in a thickness direction in the semiconductor layer;
Forming a copper electrode having an opening including the first end in plan view on one side of the semiconductor layer on which the first end of the through electrode is located;
Nickel or nickel alloy having one end inserted into the opening of the copper electrode on one side of the semiconductor layer and having a larger planar area than the through electrode and connected to the through electrode and the copper electrode A metal pillar in which a solder containing tin is connected to the copper electrode and the metal pillar to form a metal pillar whose other end protrudes from an alloy produced by copper of the copper electrode and tin of the solder A method of manufacturing a semiconductor device, comprising:

DESCRIPTION OF SYMBOLS 10 substrate 20 semiconductor chip 100 semiconductor device 101 silicon layer 110 copper pillar 121 lower wiring layer 122 electrode 130 nickel pillar 140 passivation film 200 electronic device

Claims (7)

A semiconductor layer having a copper through electrode penetrating in a thickness direction;
A copper electrode having an opening which is provided on one surface side of the semiconductor layer on which the first end of the through electrode is positioned and which includes the first end in a plan view;
Nickel or nickel alloy having one end inserted into the opening of the copper electrode on one side of the semiconductor layer and having a larger planar area than the through electrode and connected to the through electrode and the copper electrode A metal pillar made of tin, wherein a solder containing tin is connected to the copper electrode and the metal pillar, and a metal pillar whose other end protrudes from an alloy produced by copper of the copper electrode and tin of the solder; Including semiconductor devices.   The length between the one end and the other end of the metal pillar is a length that protrudes from the alloy grown and maximized when a current flows in the current path constructed by the through electrode and the metal pillar. The semiconductor device according to claim 1.   The semiconductor device according to claim 1, wherein the through electrode is a copper pillar, a through via made of copper, a pad made of copper, or a wiring made of copper.   The semiconductor device according to any one of claims 1 to 3, wherein the metal pillar is disposed so as to enclose the copper electrode in a plan view. The semiconductor layer is
Circuit,
An electrode provided on the one surface, connected to the circuit and connected to the one end of the through electrode;
The semiconductor device according to any one of claims 1 to 4, wherein the through electrode is connected to the metal pillar via the electrode. A semiconductor device,
A substrate having an electrode;
An electronic device comprising: tin; and a solder for connecting the semiconductor device and an electrode of the substrate;
The semiconductor device is
A semiconductor layer having a copper through electrode penetrating in a thickness direction;
A copper electrode having an opening which is provided on one surface side of the semiconductor layer on which the first end of the through electrode is positioned and which includes the first end in a plan view;
Nickel or nickel alloy having one end inserted into the opening of the copper electrode on one side of the semiconductor layer and having a larger planar area than the through electrode and connected to the through electrode and the copper electrode A metal pillar, the other end of which protrudes from an alloy produced by copper of the copper electrode and tin of the solder in a state where the copper electrode and the metal pillar are connected to the electrode of the substrate by the solder An electronic device having a pillar. Forming a through electrode penetrating in a thickness direction in the semiconductor layer;
Forming a copper electrode having an opening including the first end in plan view on one side of the semiconductor layer on which the first end of the through electrode is located;
Nickel or nickel alloy having one end inserted into the opening of the copper electrode on one side of the semiconductor layer and having a larger planar area than the through electrode and connected to the through electrode and the copper electrode A metal pillar in which a solder containing tin is connected to the copper electrode and the metal pillar to form a metal pillar whose other end protrudes from an alloy produced by copper of the copper electrode and tin of the solder A method of manufacturing a semiconductor device, comprising:

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