JP2017054976A - Light-emitting element, manufacturing method thereof, and light-emitting/receiving module employing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting element having a substantially rectangular shape in plan view, capable of blocking the whole of side light traveling toward at least one side.SOLUTION: A light-emitting element 100 that is formed substantially rectangular in plan view comprises: a conductive layer 20 having a surface including a light-emitting laminate formation region RL and a first conductivity type electrode formation region RE; a light-emitting laminate 30 provided on the region RL; a second conductivity type electrode 40 provided on a surface of a second conductivity type semiconductor layer 33; and a first conductivity type electrode 50 provided on the region RE. A groove part T is formed between the first conductivity type electrode 50 and the light-emitting laminate 30. The light-emitting laminate 30 faces the first conductivity type electrode 50 with the groove part T interposed therebetween. The first conductivity type electrode 50 blocks the whole of side light of the light-emitting laminate 30, traveling toward at least one of four sides of an outer edge of the substantially rectangular shape in plan view.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a light emitting device, a method for manufacturing the same, and a light emitting / receiving module using the same.

  Conventionally, light receiving and emitting modules are used in various applications such as infrared data communication and proximity sensors. Generally, in a light receiving / emitting module, a light emitting element made of an LED chip and a light receiving element made of a photodiode are arranged on an insulating substrate.

  For example, in a light emitting / receiving module used for a proximity sensor, a light emitting element emits infrared rays, and an infrared ray reflected by an object approaching the light emitting / receiving module is received by a light receiving element, thereby detecting the approach of an object in a non-contact manner.

  By the way, the infrared rays irradiated by the light emitting element are also irradiated to the front and side of the light emitting element. It is also known, for example, in Patent Document 1 that light emitted to the side (side light) can cause malfunction as a light emitting / receiving module.

  In order to prevent such a malfunction due to side light, in Patent Document 1, photoelectric conversion is performed on a substrate, a light emitting element mounted on the substrate, and light having a wavelength mounted on the substrate and emitted from the light emitting element. In a light emitting / receiving module comprising a light receiving element having a conversion function and a resin package, the resin package is divided into a light emitting side part covering the light emitting element and a light receiving side part covering the light receiving element, and the resin package And providing a cover having a partition wall located between the light emitting side portion and the light receiving side portion.

  Further, in Patent Document 2, in an infrared data communication module that includes an infrared light emitting element, an infrared light receiving element, and an IC chip, and these are mounted on a substrate and covered with a sealing resin, a ground connection is made to the substrate. It has been proposed to prevent a malfunction of the IC chip due to side light by forming a recess whose inner surface is covered with the formed metal layer and disposing the light emitting element in the recess.

JP 2008-277488 A JP 2005-191189 A

  The light receiving / emitting module described in Patent Document 1 intends to prevent malfunction caused by the side light described above by providing a partition located between the light emitting side portion and the light receiving side portion. The light receiving and emitting module described in Patent Document 2 is intended to prevent malfunction caused by side light by providing a recess in the module and disposing the light emitting element in the recess.

  In recent years, downsizing of a light emitting / receiving module has been required in order to be incorporated as an optical sensor in a mobile terminal such as a smartphone. Both Patent Documents 1 and 2 focus on improving the overall structure of the light receiving and emitting module in order to prevent malfunction. However, in the formation of the partition wall and the formation of the recess, There is a limit to further miniaturization.

  Accordingly, an object of the present invention is to provide a light emitting element suitable for use in the light emitting / receiving module, a method for manufacturing the light emitting element, and a light receiving / emitting module using the light emitting element in order to realize further downsizing of the light emitting / receiving module.

  The inventors of the present invention diligently studied how to solve the above problems, and if the side light itself from the light emitting element is shielded, the formation of the above-mentioned partition walls and the formation of the recesses are unnecessary, and the light receiving and emitting module can be downsized. I thought it would help. Here, the light emission intensity of the light emitting element is evaluated as the intensity of the entire radiation light including the side light. For this reason, there has been no recognition of the problem that light-emitting elements that are required to improve luminous efficiency are required to shield side light that leads to a decrease in luminous efficiency. However, the present inventors have conceived the recognition of the above problem, and can prevent malfunction of the light emitting / receiving module and reduce the size of the light receiving / emitting module if the side light is blocked by optimizing the electrode shape of the light emitting element. As a result, the present invention has been completed.

That is, the gist of the present invention is as follows.
(1) A light-emitting element having a substantially square shape in plan view, and a first conductive type formed on the support substrate, the surface of which is separated from the light-emitting laminate forming region and the surface thereof. A conductive layer including an electrode formation region, a light-emitting laminate including a first conductive semiconductor layer, a light-emitting layer, and a second conductive semiconductor layer formed in this order on the light-emitting laminate formation region, and the light-emitting laminate A second conductivity type electrode of the same conductivity type as the second conductivity type semiconductor layer, formed on the surface of the second conductivity type semiconductor layer, and the first conductivity type electrode formation region. A first conductivity type electrode of the same conductivity type as the one conductivity type semiconductor layer,
A groove is formed between the first conductivity type electrode and the light emitting laminate, the light emitting laminate and the first conductivity type electrode face each other through the groove, and the first conductivity type electrode is A light-emitting element that blocks all side light of the light-emitting laminated body that faces at least one side adjacent to the first conductivity type electrode formation region among four sides of an outer edge that is substantially rectangular in plan view.

(2) The height of the first conductivity type electrode is higher than the height of the light emitting stack from the conductive layer, and the top surface of the light emitting stack is at the end on the first conductivity type electrode side. The light emitting device according to (1), wherein an elevation angle θ to the first conductivity type electrode is 30 degrees or more.

(3) The first conductivity type electrode further shields the side light of the light emitting laminate that is directed to a part of the side other than the at least one side among the four sides of the outer edge having a substantially rectangular shape in plan view. ) Or (2).

(4) The first conductivity type electrode includes a first layer of the same type as the first conductivity type semiconductor layer, a second layer of the same type as the light emitting layer, formed on the first conductivity type electrode formation region. A third layer of the same type as the second conductive type semiconductor layer is in contact with the structure, and the upper surface of the structure is electrically connected to the conductive layer, and at least a part of the structure is The light emitting device according to any one of (1) to (3), which is a metal part to be coated.

(5) The light emitting device according to (4), wherein the first conductivity type electrode covers the entire structure.

(6) The light emitting element according to any one of (1) to (5), wherein the light emitting stacked body formation region has a convex shape in plan view, and the first conductivity type electrode formation region has a concave shape in plan view.

(7) The light emitting device according to any one of (1) to (6), wherein solder is provided on the first conductivity type electrode.

(8) The light-emitting element according to any one of (1) to (7), wherein the conductive layer has a pattern shape including a conductor and an insulator.

(9) A method of manufacturing a light emitting element having a substantially rectangular shape in plan view, wherein a stacked body is formed by sequentially forming a second conductive semiconductor layer, a light emitting layer, and a first conductive semiconductor layer on a growth substrate. A step of forming a conductive layer on the first conductive type semiconductor layer, a step of bonding the conductive layer and the support substrate, a step of peeling off the growth substrate, and a surface of the laminate. A removal step of partitioning into one region and a second region, and removing the entire stacked body in the second region until the conductive layer is exposed; and after the removing step, on the first region of the stacked body A second conductivity type electrode forming step of forming a second conductivity type electrode of the same conductivity type as the second conductivity type semiconductor layer; and on the exposed first conductivity type electrode formation region of the conductive layer, At least one of the first conductivity type electrodes of the same conductivity type as the one conductivity type semiconductor layer. A first conductivity type electrode forming step of forming a has,
In the first conductivity type electrode forming step, the laminate and the first conductivity type electrode face each other through a groove formed between the first conductivity type electrode and the laminate, and the plan view Of the four sides of the substantially rectangular outer edge, the first conductivity type is such that all of the side light of the laminate directed to at least one side adjacent to the first conductivity type electrode forming region is shielded by the first conductivity type electrode. The manufacturing method of the light emitting element characterized by forming an electrode.

(10) A method for manufacturing a light emitting element having a substantially square shape in plan view, wherein a stacked body is formed by sequentially forming a second conductive semiconductor layer, a light emitting layer, and a first conductive semiconductor layer on a growth substrate. A step of forming a conductive layer on the first conductive type semiconductor layer, a step of bonding the conductive layer and the support substrate, a step of peeling off the growth substrate, and a surface of the laminate. A removal step of partitioning into one region and a second region and removing a part of the laminate in the second region until the conductive layer is exposed; and after the removal step, the laminate on the first region side A second conductivity type electrode forming step of forming a second conductivity type electrode of the same conductivity type as the second conductivity type semiconductor layer on the second conductivity type semiconductor layer, and a first conductivity of the exposed conductive layer. A first electrode of the same conductivity type as the first conductivity type semiconductor layer on the mold electrode forming region; The conductivity type electrode having a first conductivity type electrode forming step of forming by coating at least a portion of the laminate of the second region side,
After the removing step, the stacked body on the first region side and the stacked body on the second region side are separated from each other. In the first conductive electrode forming step, the first conductive electrode and the first conductive layer are separated from each other. The laminated body on the first region side and the first conductivity type electrode face each other through a groove formed between the laminated body on the one region side, and the four sides of the outer edge having a substantially rectangular shape in plan view The first conductivity type electrode so that all of the side light of the stacked body on the first region side facing at least one side adjacent to the first conductivity type electrode forming region is shielded by the first conductivity type electrode. Forming a light emitting element.

(11) The light-emitting element according to any one of (1) to (8) and a light-receiving element, wherein the light-receiving element is arranged on a side where the side light of the light-emitting element is shielded. Light emitting / receiving module characterized by the above.

  According to the present invention, in the light emitting element having a substantially square shape in plan view, the first conductivity type electrode is appropriately provided so as to shield the side light directed in the predetermined direction. can do.

It is a schematic diagram explaining the light emitting element 100 according to 1st Embodiment of this invention, (A) is a schematic cross section, (B) is the top view. It is the schematic diagram of the light emitting element 110 according to 1st Embodiment of this invention, (A) is a schematic cross section, (B) is the top view. It is the schematic diagram of the light emitting element 200 according to 2nd Embodiment of this invention, (A) is a schematic cross section, (B) is the top view. It is a schematic diagram of the light emitting element 210 according to 2nd Embodiment of this invention, (A) is a schematic cross section, (B) is the top view. (A)-(E) are the top views of the light emitting element according to one Embodiment of this invention. 3 is a flowchart for illustrating a method of manufacturing light emitting device 100 according to the first embodiment of the present invention. 6 is a flowchart illustrating a method for manufacturing light emitting device 200 according to the second embodiment of the present invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In principle, the same components are denoted by the same reference numerals, and description thereof is omitted. In each drawing, for convenience of explanation, the vertical / horizontal ratio of each layer is exaggerated from the actual ratio. 1 to 4 will be described in advance. FIG. 1A is a cross-sectional view taken along the line II in FIG. 1B, and FIG. 2A is a cross-sectional view taken along the line II- in FIG. FIG. 3A is a sectional view taken along line II, FIG. 3A is a sectional view taken along line III-III in FIG. 3B, and FIG. 4A is a sectional view taken along line IV-IV in FIG. Moreover, the dashed-two dotted line in FIGS. 1-5 means the allowance for dicing.

(Light emitting element)
As shown in FIGS. 1A and 1B, the light emitting device 100 according to the first embodiment of the present invention has a substantially square shape in plan view. The light emitting element 100 includes a support substrate 10, a conductive layer formed on the support substrate 10, and includes a light emitting laminate forming region RL and a first conductivity type electrode forming region RE separated from the light emitting laminate forming region RL. 20, the light emitting stacked body 30 including the first conductive semiconductor layer 31, the light emitting layer 32, and the second conductive semiconductor layer 33 formed in this order on the light emitting stacked body formation region RL, and the first of the light emitting stacked body 30. It has the 2nd conductivity type electrode 40 formed in the 2 conductivity type semiconductor layer 33 surface, and the 1st conductivity type electrode 50 formed on the 1st conductivity type electrode formation area | region RE. The first conductivity type electrode 50 has the same conductivity type as the first conductivity type semiconductor layer 31, and the second conductivity type electrode 40 has the same conductivity type as the second conductivity type semiconductor layer 33. The semiconductor layer 31 and the second conductivity type semiconductor layer 33 have different conductivity types. For example, when the first conductivity type semiconductor layer 31 is n-type, the second conductivity type semiconductor layer is p-type. Similarly, when the first conductive semiconductor layer 31 is p-type, the second conductive semiconductor layer is n-type. Each layer and each electrode can be composed of a general material used in a semiconductor light emitting device (LED), and the wavelength of light emitted by the light emitting laminate 30 is also determined depending on the use of the light emitting device 100. By appropriately selecting, any of infrared light, visible light and ultraviolet light can be obtained.

  Note that “the surface of the conductive layer 20 includes the light emitting laminate formation region RL and the first conductivity type electrode formation region RE” means that the surface of the conductive layer 20 is divided into predetermined regions RL and RE that do not overlap each other. Meaning, regions other than region RL and region RE may also be present on this surface. However, the light emitting laminate formation region RL and the first conductivity type electrode formation region RE are electrically connected. Further, the first conductivity type electrode formation region RE means a region where the first conductivity type electrode 50 is formed immediately above the region, and the first conductivity type electrode 50 is a region other than the first conductivity type electrode formation region RE. The conductive layer 20 may be extended through another configuration (for example, see FIG. 2 described later). Similarly, the light emitting laminate formation region RL means a region where the light emitting laminate 30 is formed immediately above the region.

  Hereinafter, for the sake of simplicity in this embodiment, the first conductive semiconductor layer 31 is referred to as a p-type semiconductor layer 31 (abbreviated as “p layer 31”), and the second conductive semiconductor layer 33 is referred to as an n-type semiconductor layer 33 ( (Abbreviated as “n layer 33”). Similarly, the second conductivity type electrode 40 is referred to as an n-type electrode 40, and the first conductivity type electrode 50 is referred to as a p-type electrode 50. However, it goes without saying that the p-type and n-type of each layer and each electrode may be interchanged. Note that the “substantially square shape” in this specification includes not only a square shape but also a corner portion of the square that is rounded by chamfering or the like. In the latter case, the four sides of the quadrangle when virtualized when not rounded are regarded as the respective sides of a substantially quadrangular shape in plan view.

  Further, in the light emitting element 100, a groove portion T is formed between the p-type electrode 50 and the light emitting laminate 30, and the light emitting laminate 30 and the p-type electrode 50 face each other through the groove portion T. The p-type electrode 50 shields all of the side light L of the light-emitting stacked body 30 toward at least one side adjacent to the first conductivity type electrode formation region RE among the four sides of the outer edge having a substantially rectangular shape in plan view. In the example shown in FIG. 1B, the p-type electrode 50 is arranged in a U-shape, and all of the side light L toward the right side of the quadrangle is shielded by the p-type electrode 50, and is also shielded at the upper and lower sides. Is done. Here, “side light” in this specification means light extracted in a horizontal direction with respect to the substrate surface. The height of the first conductivity type electrode 50 is preferably formed higher than the height of the light emitting laminate 30 from the conductive layer 20. Furthermore, it is preferable that the elevation angle θ to the first conductivity type electrode 50 at the end of the upper surface of the light emitting laminate 30 on the first conductivity type electrode side is 30 degrees or more. In other words, in one embodiment of FIG. 1A, tanθ = ΔH / t, where ΔH is the height difference between the first conductivity type electrode 50 and the light emitting laminate 30, and t is the width of the groove T. Tan θ ≧ 1 / √3 (θ is 30 degrees or more). By doing so, side light from the side surface of the light emitting laminate 30 toward the first conductivity type electrode 50 is more reliably shielded. For light obliquely upward from the horizontal direction, if θ is 30 degrees or more, the component of the light that passes above this angle and passes above the first conductivity type electrode is not in the direction in which the light directly reaches the light receiving element (however, This is because there is no need to consider the adverse effect on the light receiving element. In this case, the height difference ΔH between the first conductivity type electrode 50 and the light emitting laminate 30 can be 1 to 100 μm, and the width t of the groove T can be 1 to 50 μm. For example, ΔH can be 10 μm, t can be 10 μm, and θ can be 45 degrees. 2A, a part of the p-type electrode 50 seems to cover the end portion of the upper surface of the light-emitting laminate 30 on the first conductivity type electrode side, as in the light-emitting element 110 described later with reference to FIG. In this case, θ is considered to be 90 degrees.

  When a voltage is applied to the n-type electrode 40 and the p-type electrode 50, a current flows through the light-emitting stack 30 through the conductive layer 20 (the light-emitting element 100 can be said to be a so-called “lateral” light-emitting element), and light emission. Light is emitted from the stacked body 30. Since the p-type electrode 50 is as described above, in the embodiment of FIG. 1B, all of the side light L toward the right side is shielded. Therefore, when used in a light emitting / receiving module, if the light receiving element is arranged on the side where the side light L is shielded (the right side in this embodiment), the malfunction can be prevented and the light receiving / emitting module can be downsized. Therefore, it is suitable for use in a light emitting / receiving module.

  Here, as illustrated in FIG. 1B, the p-type electrode 50 is a side light of the light-emitting laminate that is directed to a part of the sides other than the at least one side among the four sides of the outer edge having a substantially rectangular shape in plan view. Is preferably further shielded. As described above, in the example shown in FIG. 1B, the p-type electrode 50 arranged in a U-shape shields the side light L toward the right side of the quadrangle, and also shields the upper and lower sides. This is because the side light of the light emitting laminate 30 can be more reliably shielded. Furthermore, it is preferable that the trench T exposes the conductive layer 20. When the groove T is formed so as to leave the first conductivity type semiconductor layer 31, leakage of the side light L via the remaining first conductivity type semiconductor layer 31 can be prevented, and the side light L can be more reliably shielded. It is.

  Further, as a modification of the light emitting device 100 according to the first embodiment described above, a light emitting device 110 in which the groove T is filled with the protective film 60 can be cited as shown in FIG. 2 (FIG. 2A). In the light emitting element 100, the p-type electrode 50 is all formed only above the first conductivity type (p-type) electrode formation region RE. However, in the light emitting element 110, a part of the p-type electrode 50 is formed of the light emitting laminate. Above the formation region RL, it extends through the protective film 60. Note that the term “facing” the light-emitting stack 30 and the p-type electrode 50 in this specification means that light is emitted through another structure such as the protective film 60 as in the light-emitting element 110 illustrated in FIG. The case where the laminated body 30 and the p-type electrode 50 (at least a part thereof) face each other is also included.

In the light-emitting element 110 illustrated in FIG. 2B, the side light of the light-emitting stack 30 toward the entire left side (and at least a part of the upper side and the lower side) out of the four sides of the outer edge that is substantially rectangular in plan view. It is taken out. And the groove part T is comprised between the p-type electrode 50 and the light emitting laminated body 30, and the light emitting laminated body 30 and the p-type electrode 50 face through this groove part T. FIG. In the light emitting element 110, since the p-type electrode 50 covers all of the right side of the light emitting element 110 (except for a portion for dicing), all of the side light L of the light emitting laminate 30 toward the right side is surely shielded. can do. Further, since the p-type electrode 50 covers a part of the light emitting laminate 30, it is also preferable in that the light of the covered part can be shielded. As the protective film 60, for example, a SiO ₂ film can be used.

  Although not illustrated in FIG. 1, like the light emitting element 110, the protective film 60 may fill a part or all of the groove T of the light emitting element 100, and preferably covers the light emitting laminate. The insulation between the p-type electrode 50 and the light emitting laminate 30 can be increased and a short circuit can be suppressed.

  Further, as shown in FIGS. 3A and 3B, the light emitting device 200 according to the second embodiment of the present invention has, for example, a first conductivity type on a region other than the light emitting laminate formation region RL of the conductive layer 20. On the region surrounded by the electrode formation region RE, a first layer 31 ′ of the same type as the first conductive type semiconductor layer 31 (p layer 31), a second layer 32 ′ of the same type as the light emitting layer 32, and a second conductive A structure 30 ′ including a third layer 33 ′ of the same type as the type semiconductor layer 33 (n layer 33) may be formed in this order. The first conductivity type electrode 50 (p-type electrode 50) is in contact with the structure 30 ′, electrically connects the upper surface of the structure 30 ′ and the conductive layer 20, and further includes at least the structure 30 ′. It is also preferable that the metal part covers a part. FIG. 3A shows an example in which the p-type electrode 50 covers the entire structure 30 ′. Further, as shown in FIGS. 4A and 4B, the p-type electrode 50 may cover only a part of the structure 30 ′. In this case, the structure 30 ′ has a light emitting laminate formation region. It can be formed on a region other than the RL, in contact with the first conductivity type electrode formation region RE and separated from the region RL. In both of the light emitting elements 200 and 210, when a voltage is applied to the n-type electrode 40 and the p-type electrode, a current flows through the light emitting stack 30 through the conductive layer 20, and light is emitted from the light emitting stack 30. . Note that the structure 30 ′ is short-circuited by the first conductivity type electrode 50 and thus does not emit light.

  The first conductive semiconductor layer 31 and the first layer 31 ′ being “same type” means that the polarity, composition and thickness of both are the same or substantially equal, and the second layer 32 ′ and the third layer 31 ′ are the same. The same applies to the layer 33 ′. The technical significance of the structure 30 'will be described later.

  Further, although not described in detail, in the light emitting elements 200 and 210 according to the second embodiment as well as the light emitting element 110, the protective film 60 may be filled in a part or all of the groove T.

  Furthermore, the electrode shapes of the n-type electrode 40 and the p-type electrode 50 of the present invention are not limited to the shapes of FIGS. 1 to 4, and in order to optimize the current flowing through the light emitting laminate 30, for example, Various electrode shapes as shown in FIGS. 5A to 5E can be taken.

  5A is an electrode shape similar to that of FIG. 1A as a cross-sectional view, but when viewed in plan, the p-type electrode 50 has a region excluding the light emitting laminate formation region RL and the trench T. It is formed over the entire surface. In this case, side light to the three sides of the right side, the upper side, and the lower side can be blocked, which is preferable. Hereinafter, in this paragraph, the side from which light is extracted is referred to as a “left side”, and the side that blocks all of the side light L is referred to as a “right side”. In order to prevent light leaking obliquely from the upper side or the lower side, for example, from the upper side or the lower side, other than the right side to be shielded, the direction of leaking from the end of the left side to the back as shown in FIG. 5A It is preferable that the shape prevent the majority of light. Further, as shown in FIG. 5B, it is also preferable to provide the p-type electrode 50 so as to cover all of the right side and a part on the right side of the upper side and the lower side. Can be suppressed. 5C, the light emitting laminate 30 (ie, the light emitting laminate forming region RL) has a convex shape in plan view, and the p-type electrode 50 (ie, the first conductivity type electrode forming region RE) has a concave shape in plan view. It is. 5D, as in FIG. 5C, the light emitting laminate formation region RL has a convex shape in plan view, and the first conductivity type electrode formation region RE has a concave shape in plan view. A round portion is provided in the convex portion of the stacked body forming region RL, and the convex portion is formed from the straight portion and the curved portion. 5E, similarly to FIG. 5C, the light emitting laminate formation region RL has a convex shape in plan view, and the first conductivity type electrode formation region RE has a concave shape in plan view. The convex part of the laminated body formation region RL has a roundness on a parabola. 5C to 5E, a plurality of n-type electrodes 40 are provided. As described above, the shapes of the n-type electrode 40 and the p-type electrode 50 can be appropriately designed as desired.

  The light emitting device according to the present invention can be applied to both a flip chip type and a wire bonding type, and it is preferable that solder is provided on the first conductivity type electrode 50 (p type electrode 50).

  The support substrate 10 may be any material as long as it can be bonded to the substrate or formed by plating via the conductive layer 20 and can support the light emitting laminate 30. It is preferable that the material has a close thermal expansion coefficient. In accordance with the material of the light emitting laminate 30, for example, a Si substrate, a SiC substrate, a GaAs substrate, a substrate such as GaN or AlN, a metal or alloy material such as Cu, W, or Mo, a resin such as epoxy or polyimide, A light-transmitting substrate such as a glass substrate can be used for the support substrate 10. The conductive layer 20 has a pattern shape (not shown) made of a conductor and an insulator as long as the electrical connection between the light emitting laminate formation region RL and the first conductivity type electrode formation region RE is maintained. ).

  Hereinafter, although each structure is illustrated, this embodiment can apply the various material which can be used for a light emitting element, and is not restrict | limited to the following specific examples at all.

First, for example, a Si substrate can be used as the support substrate 10. Although not shown, between the support substrate 10 and the conductive layer 20, a Si substrate-side bonding layer and a conductive layer-side reflective bonding layer for bonding the support substrate 10 and the conductive layer 20 are provided. Is preferred. For this bonding layer, for example, Ti, Pt, Au, an alloy selected from these metals, and a laminated structure thereof can be used. The reflective bonding layer is made of a material having a high reflectance with respect to the emission wavelength, for example, a metal such as Al, Au, Pt, or Cu, an alloy selected from these metals, and a laminated structure thereof. be able to. It is desirable from the viewpoint of bonding strength that the surface corresponding to the bonding surface of the bonding layer and the reflective bonding layer is made of a metal that does not oxidize such as Au. It is also possible to join using a solder material. In the case where the conductive layer has a pattern shape including the aforementioned insulator, for example, SiO ₂ can be used for such an insulator.

  For example, when the light emitting laminate 30 emits infrared light, each layer of the light emitting laminate 30 including the p layer 31, the light emitting layer 32, and the n layer 33 includes a GaAs material, an AlGaAs material, an InGaAs material, an AlGaInAs material, and the like. The composition can be appropriately selected from InGaAsP materials and the like. The light emitting laminate 30 may have a buffer layer, and the light emitting layer 32 may have a multiple quantum well structure. Common n-type and p-type impurities can also be used.

  The n-type electrode 40 is made of a material that forms a good contact with the n-layer 33. For example, Au, Ge, Ni, Ti, Pt, Cu, Sn, Ag, and alloys selected from these metals, and These laminated structures can be used. For example, Au, Ge, Ni can be used as the ohmic electrode of the n-type electrode 40, Cu, Sn, Ag can be used as a material for solder plating, and Ti, Ni, Pt can be used as a seed or barrier layer therebetween. The p-type electrode 50 is made of a material that does not transmit light emitted from the light emitting laminate 30. For example, Au, Ni, Ti, Pt, Cu, Sn, Ag and an alloy thereof, and a laminated structure thereof can be used. Further, AuZn can be used as an ohmic electrode, Ti, Ni, and Pt can be used as a seed or barrier layer, and Cu, Sn, and Ag can be used as a solder plating material.

(Manufacturing method of light emitting element)
Next, an embodiment of a method for manufacturing the light emitting device 100 according to the first embodiment of the present invention described so far will be described with reference to FIG. 1 to 5, the dicing margin is indicated by a two-dot chain line, but for simplicity, it is not indicated in FIG. 6 and FIG. 7 described later. In the method of manufacturing the light emitting element 100 having a substantially square shape in plan view, the second conductive semiconductor layer 33, the light emitting layer 32, and the first conductive semiconductor layer 31 are sequentially formed on the growth substrate 90 (FIG. 6A). The step of forming the formed laminate 30 (FIG. 6B), the step of forming the conductive layer 20 on the first conductive type semiconductor layer 31 (FIG. 6C), the conductive layer 20 and the support A step of bonding the substrate 10 (FIG. 6D), a step of peeling the growth substrate 90 (FIG. 6E), and a surface of the stacked body 30 are divided into a first region R1 and a second region R2. Then, a removal step (FIG. 6F) of removing all of the stacked body 30 in the second region R2 until the conductive layer 20 is exposed, and after the removing step, the second conductive type semiconductor layer 33 of the stacked body 30. A second conductivity type that forms a second conductivity type electrode 40 of the same conductivity type as the second conductivity type semiconductor layer 33 on the second conductivity type electrode A first forming step of forming at least a part of the first conductivity type electrode 50 of the same conductivity type as the first conductivity type semiconductor layer 31 on the first conductivity type electrode formation region RE of the exposed conductive layer 20 in the pole forming step; A conductive electrode forming step (FIGS. 6G to 6H). Here, “partitioning” the surface of the laminated body 30 into the first region R1 and the second region R2 means that the surface of the laminated body 30 is divided into two predetermined regions, and other regions are included. Make it not exist.

  Here, in the first conductivity type electrode forming step, the multilayer body 30 and the first conductivity type electrode 50 face each other through the groove T formed between the first conductivity type electrode 50 and the multilayer body 30. The first conductive type electrode 50 shields all of the side light of the stacked body 30 toward at least one side adjacent to the first conductive type electrode formation region RE out of the four sides of the outer edge having a substantially rectangular shape in plan view. Conductive electrode 50 is formed. When the light emitting device 100 manufactured in this way is used in a light receiving and emitting module, if the light receiving device is arranged on the side where the side light is shielded, the malfunction can be prevented and the light receiving and emitting module can be downsized. It is suitable for use in a light emitting / receiving module. For each step, conventional methods such as MOCVD, sputtering, and plating growth can be applied, and the following description is merely a specific example and a preferred example.

  As the growth substrate 90, for example, a GaAs substrate can be used. In order to easily perform the step of peeling the growth substrate 90 (FIG. 6E), an appropriate etching selectivity with respect to the growth substrate is set prior to the step of forming the stacked body 30 (FIG. 6B). An etching stop layer may be formed. In this case, in the step of peeling (FIG. 6E), the growth substrate can be removed by etching to be peeled off. Further, the growth substrate may be peeled off by laser irradiation or the like.

  In the removing step (FIG. 6F), for example, a photoresist or the like is applied to the surface of the second conductivity type semiconductor layer 33 to form a mask, which is partitioned into a first region R1 and a second region R2, and phosphoric acid Etching can be performed using hydrogen peroxide or the like.

  In the electrode formation step (FIGS. 6G to 6H), first, plating seed layers 41 and 51 such as Ti and Cu are formed on the laminate 30 and the exposed conductive layer 20 surface. Next, after forming a resist pattern, the second conductivity type electrode 42 and the first conductivity type electrode 52 are plated and grown on the seed layers 41 and 51 by a plating growth method, and the second conductivity type electrode 40 and the first conductivity type are then grown. A mold electrode 50 can be formed. In the case of this embodiment, it is preferable to grow the second conductivity type electrode 42 and the first conductivity type electrode 52 separately in order to make the heights of the electrodes uniform. After the plating growth, unnecessary portions of the seed layers 41 and 51 are removed by etching. As described above, as long as the first conductivity type electrode 50 is formed so as to shield the side light of the stacked body 30 toward the predetermined one side, various electrode shapes can be used. Further, as described above in the description of the light emitting elements 100 and 200, the protective film 60 may be provided.

  As a modification of the manufacturing method of the present invention, a manufacturing method of the light emitting device 200 according to the second embodiment will be described with reference to FIGS. In the method of manufacturing the light emitting element 100 having a substantially square shape in plan view, the second conductive semiconductor layer 33, the light emitting layer 32, and the first conductive semiconductor layer 31 are sequentially formed on the growth substrate 90 (FIG. 6A). The step of forming the formed laminate 30 (FIG. 6B), the step of forming the conductive layer 20 on the first conductive type semiconductor layer 31 (FIG. 6C), the conductive layer 20 and the support The step of bonding the substrate 10 (FIG. 6D), the step of peeling the growth substrate 90 (FIG. 6E, FIG. 7A), and the surface of the stacked body 30 with the first region R1 and the first A removal step (FIG. 7B) that divides into two regions R2 and removes part of the stacked body 30 in the second region R2 until the conductive layer 20 is exposed, and after the removal step, the first region R1 side The second conductivity type of the same conductivity type as the second conductivity type semiconductor layer 33 on the second conductivity type semiconductor layer 33 of the stacked body 30 of A second conductivity type electrode forming step for forming the pole 40 and a first conductivity type electrode 50 of the same conductivity type as the first conductivity type semiconductor layer 31 on the exposed first conductivity type electrode formation region RE of the conductive layer 20. Including a first conductivity type electrode forming step (FIGS. 7C to 7D) that covers and forms at least a part of the laminate on the second region R2 side. Here, for convenience, the stacked body remaining on the second region R2 side after the removing step (FIG. 7B) is referred to as a stacked body 30 '. After the removing step (FIG. 7B), the stacked body 30 on the first region R1 side is separated from the stacked body 30 'on the second region R2 side. The first semiconductor layer on the second region R2 side is the first layer 31 ', and similarly, the light emitting layer is the second layer 32', and the second semiconductor layer is the third layer 33 '. In the case of the embodiment of FIG. 7, the first conductivity type electrode 50 is extended and connected on the upper surface of the multilayer body 30 ', and covers the entire multilayer body.

  In the first conductivity type electrode forming step, the first layer R1 side laminate 30 and the first region R1 side laminate 30 are formed via the groove T formed between the first conductivity type electrode 50 and the first region R1 side laminate 30. All of the side light of the laminated body 30 on the first region R1 side facing the conductive electrode 50 and facing at least one side adjacent to the first conductive type electrode forming region among the four sides of the outer edge having a substantially rectangular shape in plan view. The first conductivity type electrode 50 is formed so as to be shielded by the first conductivity type electrode 50.

  When the light emitting element 200 manufactured in this way is used in a light receiving / emitting module, if the light receiving element is arranged on the side where the side light is shielded, the malfunction can be prevented and the light receiving / emitting module can be downsized. It is suitable for use in a light emitting / receiving module.

  Further, in the case of the present embodiment, unlike the above-described embodiment of the method for manufacturing the light emitting device 100, the heights of the stacked body 30 and the stacked body 30 ′ are uniform. It is not necessary to perform plating growth separately in order to make the heights of the conductive electrodes 50 uniform, and the number of steps can be reduced, which is preferable.

(Light emitting / receiving module)
A light emitting / receiving module according to an embodiment of the present invention includes the above light emitting element and a light receiving element, and the light receiving element is disposed on the side of the light shielding element that is shielded. To do. For example, a circuit is formed over a light-transmitting substrate, the first conductive type electrode and the second conductive type electrode of the light-emitting element are aligned with one side of the circuit and mounted using solder or the like, and the other side of the circuit is mounted. Mount the light receiving element. As a result, the light emitted from the light-emitting element that has been transmitted through the light-transmitting substrate is reflected by the object, enters the light-transmitting substrate, and is detected by the light-receiving element. According to the feature of the present invention, on the side where the circuit of the translucent substrate is formed, the light emitting element itself is provided with a malfunction prevention measure between the light emitting element and the light receiving element. Therefore, a light receiving / emitting module design can be made smaller.

  ADVANTAGE OF THE INVENTION According to this invention, it can use for a light emitting / receiving module and can provide a suitable light emitting element.

DESCRIPTION OF SYMBOLS 10 Support substrate 20 Conductive layer 30 Light emitting laminated body (laminated body)
31 1st conductivity type semiconductor layer (p layer)
32 Light emitting layer 33 Second conductive type semiconductor layer (n layer)
40 Second conductivity type electrode (n-type electrode)
50 First conductivity type electrode (p-type electrode)
90 growth substrate 100 light emitting element L side light RL light emitting laminate forming region RE first conductivity type electrode forming region T groove

Claims (11)

A light emitting device having a substantially rectangular shape in plan view,
A support substrate;
A conductive layer formed on the support substrate, the surface including a light emitting laminate forming region and a first conductivity type electrode forming region separated from the light emitting laminate forming region;
A light emitting laminate including a first conductive semiconductor layer, a light emitting layer, and a second conductive semiconductor layer formed in this order on the light emitting laminate forming region;
A second conductivity type electrode of the same conductivity type as the second conductivity type semiconductor layer formed on the surface of the second conductivity type semiconductor layer of the light emitting laminate;
A first conductivity type electrode formed on the first conductivity type electrode formation region and having the same conductivity type as the first conductivity type semiconductor layer;
A groove is formed between the first conductivity type electrode and the light emitting laminate, the light emitting laminate and the first conductivity type electrode face each other through the groove, and the first conductivity type electrode is A light-emitting element that blocks all side light of the light-emitting laminated body that faces at least one side adjacent to the first conductivity type electrode formation region among four sides of an outer edge that is substantially rectangular in plan view. The height of the first conductivity type electrode is higher than the height of the light emitting laminate from the conductive layer,
2. The light emitting device according to claim 1, wherein an elevation angle θ with respect to the first conductivity type electrode at an end of the upper surface of the light emitting laminate on the first conductivity type electrode side is 30 degrees or more.   The said 1st conductivity type electrode further shields the side light of the said light emitting laminated body which goes to a part of sides other than the said at least one side among the four sides of the outer edge of the substantially rectangular shape in the plan view. The light emitting element of description. The first conductivity type electrode is formed on the first conductivity type electrode formation region, the first type of the same type as the first conductivity type semiconductor layer, the second layer of the same type as the light emitting layer, In contact with a structure including a second conductivity type semiconductor layer and a third layer of the same kind in this order,
Electrically connecting the upper surface of the structure and the conductive layer;
The light emitting element of any one of Claims 1-3 which is a metal part which coat | covers at least one part of the said structure.   The light emitting device according to claim 4, wherein the first conductivity type electrode covers the entire structure.   The light emitting element of any one of Claims 1-5 whose said light emitting laminated body formation area is planar view convex shape, and whose said 1st conductivity type electrode formation area is planar view concave shape.   The light emitting device according to claim 1, wherein solder is provided on the first conductivity type electrode.   The light emitting device according to claim 1, wherein the conductive layer has a pattern shape including a conductor and an insulator. A method of manufacturing a light emitting element having a substantially square shape in plan view,
Forming a laminated body formed by sequentially forming a second conductive semiconductor layer, a light emitting layer and a first conductive semiconductor layer on a growth substrate;
Forming a conductive layer on the first conductive semiconductor layer;
Bonding the conductive layer and the support substrate;
Peeling the growth substrate;
A step of dividing the surface of the multilayer body into a first region and a second region, and removing all of the multilayer body in the second region until the conductive layer is exposed;
A second conductivity type electrode forming step of forming a second conductivity type electrode of the same conductivity type as the second conductivity type semiconductor layer on the first region of the stacked body after the removing step;
A first conductivity type electrode forming step of forming at least a part of a first conductivity type electrode of the same conductivity type as the first conductivity type semiconductor layer on the exposed first conductivity type electrode formation region of the conductive layer; Have
In the first conductivity type electrode forming step, the laminate and the first conductivity type electrode face each other through a groove formed between the first conductivity type electrode and the laminate, and the plan view Of the four sides of the substantially rectangular outer edge, the first conductivity type is such that all of the side light of the laminate directed to at least one side adjacent to the first conductivity type electrode forming region is shielded by the first conductivity type electrode. The manufacturing method of the light emitting element characterized by forming an electrode. A method of manufacturing a light emitting element having a substantially square shape in plan view,
Forming a laminated body formed by sequentially forming a second conductive semiconductor layer, a light emitting layer and a first conductive semiconductor layer on a growth substrate;
Forming a conductive layer on the first conductive semiconductor layer;
Bonding the conductive layer and the support substrate;
Peeling the growth substrate;
Removing the surface of the multilayer body into a first region and a second region, and removing a part of the multilayer body in the second region until the conductive layer is exposed;
After the removing step, a second conductivity type for forming a second conductivity type electrode of the same conductivity type as the second conductivity type semiconductor layer on the second conductivity type semiconductor layer of the stacked body on the first region side An electrode forming step;
A first conductivity type electrode of the same conductivity type as the first conductivity type semiconductor layer is disposed on the exposed first conductivity type electrode formation region of the conductive layer, and at least a part of the stacked body on the second region side is disposed. A first conductivity type electrode forming step of covering and forming,
After the removing step, the stacked body on the first region side is separated from the stacked body on the second region side,
In the first conductivity type electrode forming step, the stack on the first region side and the first through the groove portion formed between the first conductivity type electrode and the stack on the first region side. All of the side light of the laminate on the first region side facing the first conductivity type electrode and facing at least one side adjacent to the first conductivity type electrode forming region among the four sides of the substantially rectangular outer edge in plan view. Forming the first conductive type electrode so that the first conductive type electrode is shielded by the first conductive type electrode. A light-emitting element according to any one of claims 1 to 8 and a light-receiving element,
The light receiving and emitting module, wherein the light receiving element is disposed on a side of the light emitting element where the side light is shielded.

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