JP2016111156A - Tape for wafer processing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a tape for wafer processing capable of reducing occurrence of a label trace and entangling of air between an adhesive layer and an adhesive film.SOLUTION: A tape for wafer processing comprises: a long mold releasing film 11; an adhesive layer 12 having a prescribed planar shape and provided on a first surface of the mold releasing film 11; an adhesive film 13 covering the adhesive layer 12 and including a label part 13a having the prescribed planar shape and provided so as to come into contact with the mold releasing film 11 around the adhesive layer 12 and a peripheral part 13b provided so as to surround the outside of the label part 13a; and a support member 14 provided at both ends in a short direction of the mold releasing film 11 on a second surface opposite to the first surface of the mold releasing film 11. The support member 14 has a thickness 1.0 to 4.0 times of the thickness of the adhesive layer 12.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a wafer processing tape, and more particularly to a wafer processing tape having two functions of a dicing tape and a die bonding film.

  Recently, dicing tape for fixing the semiconductor wafer when cutting and separating (dicing) the semiconductor wafer into individual chips, and bonding the cut semiconductor chip to a lead frame, a package substrate, etc., or stacked As a package, a dicing die bonding tape having two functions of a die bonding film (also referred to as a die attach film) for laminating and adhering semiconductor chips has been developed.

  Some dicing / die bonding tapes have been pre-cut in consideration of workability such as attachment to a wafer and attachment to a ring frame during dicing.

  Examples of the pre-cut processed dicing die bonding tape are shown in FIGS. 4 is a view showing a state where the dicing die bonding tape is wound up in a roll shape, FIG. 5A is a plan view of the dicing die bonding tape, and FIG. 5B is a view showing FIG. It is sectional drawing by line BB of (a). The dicing die bonding tape 50 includes a release film 51, an adhesive layer 52, and an adhesive film 53. The adhesive layer 52 is processed into a circle corresponding to the shape of the wafer, and has a circular label shape. The adhesive film 53 is obtained by removing the peripheral area of the circular portion corresponding to the shape of the ring frame for dicing. As shown in the drawing, the adhesive film 53 includes a circular label portion 53a and a peripheral portion 53b surrounding the outside. Have. The adhesive layer 52 and the circular label portion 53a of the pressure-sensitive adhesive film 53 are laminated with their centers aligned, and the circular label portion 53a of the pressure-sensitive adhesive film 53 covers the adhesive layer 52 and is released from the periphery thereof. It is in contact with the film 51.

  When dicing the wafer, the release film 51 is peeled from the laminated adhesive layer 52 and the adhesive film 53, and the back surface of the semiconductor wafer W is pasted on the adhesive layer 52, as shown in FIG. The dicing ring frame R is adhesively fixed to the outer peripheral portion of the circular label portion 53a of the adhesive film 53. In this state, the semiconductor wafer W is diced, and then the adhesive film 53 is subjected to a curing process such as ultraviolet irradiation to pick up a semiconductor chip. At this time, since the adhesive film 53 has a reduced adhesive force due to the curing process, the adhesive film 53 is easily peeled off from the adhesive layer 52, and the semiconductor chip is picked up with the adhesive layer 52 attached to the back surface. The adhesive layer 52 attached to the back surface of the semiconductor chip then functions as a die bonding film when the semiconductor chip is bonded to a lead frame, a package substrate, or another semiconductor chip.

  By the way, in the dicing die bonding tape 50 as described above, the portion where the adhesive layer 52 and the circular label portion 53a of the adhesive film 53 are laminated is thicker than the peripheral portion 53b of the adhesive film 53. Therefore, when the product is wound into a roll, the step between the adhesive layer 52 and the circular label portion 53a of the pressure-sensitive adhesive film 53 and the peripheral portion 53a of the pressure-sensitive adhesive film 53 overlap each other, so that the flexible adhesive A phenomenon in which a step is transferred to the surface of the layer 52, that is, a transfer mark (also referred to as a label mark, wrinkle, or winding mark) as shown in FIG. Such transfer marks are particularly noticeable when the adhesive layer 52 is formed of a soft resin or has a thickness, or when the number of windings of the tape 50 is large. When the transfer mark is generated, there is a risk that a defect may occur during the processing of the wafer due to poor adhesion between the adhesive layer and the semiconductor wafer.

  In order to solve such a problem, the release film is on the second surface opposite to the first surface on which the adhesive layer and the pressure-sensitive adhesive film are provided, and the release film is short. Wafer processing tapes having support members provided at both ends in the direction have been developed (see, for example, Patent Document 1). Since such a wafer processing tape is provided with a support member, when the wafer processing tape is wound into a roll, the winding pressure applied to the tape can be dispersed or collected on the support member. Therefore, it is possible to suppress the formation of transfer marks on the adhesive layer.

Japanese Patent No. 4360653

  In general, the pressure-sensitive adhesive film 53 covers the adhesive layer 52 and is in contact with the release film 51 around the adhesive layer 52. However, depending on the thickness of the adhesive layer 52, the peripheral portion of the adhesive layer 52 is released from the mold. There may be a slight gap between the film 51 and the adhesive film 53 and air may remain. Such air between the release film 51 and the adhesive film 53 may move and escape to the outside of the circular label portion 53a. In such a case, the physical properties are not greatly affected.

  However, the wafer processing tape is placed in a low temperature state (for example, −20 ° C. to 5 ° C.) during storage and transportation, and sometimes cooled to −40 ° C. or lower. Under such a low temperature, the adhesive strength of the adhesive film may be significantly reduced and may not develop. On the other hand, when being bonded to the semiconductor wafer W, it is heated, and at the time of use when processing the semiconductor wafer W, it is placed in a normal environment with a large temperature change, such as being kept at room temperature. Adhesive layer and release film, release film and adhesive film, and even adhesion due to such a decrease in adhesive strength due to low temperature, release film caused by temperature change, adhesive layer, and dimensional change of adhesive film Air may enter between the agent layer and the adhesive film. The air that has entered between the adhesive layer and the pressure-sensitive adhesive film may cause poor bonding to the semiconductor wafer W, which may lead to a decrease in yield in the dicing process, chip pick-up process, and bonding process of the semiconductor wafer W.

  When the support member is provided like the wafer processing tape of Patent Document 1 and the thickness of the support member is increased in order to effectively prevent transfer marks, the wafer processing tape is wound in a roll shape. The wafer processing tape is not wound on the upper surface of the portion corresponding to the adhesive layer, and is in a hollow state, and when the hollow portion becomes large, it is easy to attract air at the peripheral edge of the adhesive layer to the inside of the adhesive layer. I understood it.

  Therefore, the present invention provides a tape for wafer processing that can reduce the generation of label marks and can reduce air entrainment between the adhesive layer and the adhesive film. Is an issue.

  In order to solve the above problems, a wafer processing tape according to the present invention includes a long release film, and an adhesive layer having a predetermined planar shape provided on the first surface of the release film. A label portion having a predetermined planar shape that covers the adhesive layer and is in contact with the release film around the adhesive layer, and a peripheral portion that surrounds the outside of the label portion On the second surface of the release film opposite to the first surface on which the adhesive layer and the adhesive film are provided, and the short side of the release film Support members provided at both ends in the direction, and the support members have a thickness of 1.0 to 4.0 times the thickness of the adhesive layer.

  The semiconductor processing tape preferably has a linear expansion coefficient of 300 ppm / ° C. or less of the support member.

  In the semiconductor processing tape, the difference between the linear expansion coefficient of the support member and the linear expansion coefficient of the release film is preferably 250 ppm / ° C. or less.

  Moreover, the said adhesive film of the said tape for semiconductor processing has an adhesive layer and a base film, and the static friction coefficient between the said base film and the said supporting member is 0.2-2.0. Is preferred.

  In the semiconductor processing tape, a support member is provided in a region corresponding to the outside of the adhesive layer provided on the first surface on the second surface of the release film. It is preferable.

  In the semiconductor processing tape, the support member is preferably provided continuously along the longitudinal direction of the release film.

  In the semiconductor processing tape, the support member may be colored. At this time, it is preferable that the supporting member is colored according to the kind of wafer processing tape. Moreover, it may be colored according to the thickness of the wafer processing tape.

  In the semiconductor processing tape, the support member preferably has a laminated structure of two or more layers.

  In the semiconductor processing tape, the support member may be an adhesive tape obtained by applying an adhesive to a resin film substrate selected from the group consisting of polyethylene terephthalate, polypropylene, and high-density polyethylene. preferable.

  Further, in the tape for semiconductor processing, the ratio Eb / Ea between the tensile storage elastic modulus Eb of the pressure-sensitive adhesive film at 23 ° C. and the tensile storage elastic modulus Ea of the release film at 23 ° C. is 0.001 to 100. Preferably there is.

  Moreover, it is preferable that ratio Ta / Tb of the thickness Ta of a release film and the thickness Tb of the said adhesive film is 0.07-2.5.

  The semiconductor processing tape has a peel force F1 between the adhesive layer and the release film of 0.025 in a T-type peel test under conditions of a temperature of 23 ± 2 ° C. and a peel speed of 300 mm / min. It is -0.075N / 100mm, It is preferable that peeling force F2 between the said adhesive bond layer and the said adhesive film is 0.08-10N / 100mm, and is F1 <F2.

  According to this invention, generation | occurrence | production of a label trace can be reduced and it can reduce entrainment of air (air) between an adhesive bond layer and an adhesive film.

(A) is a top view of the tape for wafer processing which concerns on embodiment of this invention, (b) is sectional drawing by line AA of (a). It is sectional drawing of the tape for wafer processing which concerns on other embodiment of this invention. It is sectional drawing of the tape for wafer processing which concerns on further another embodiment of this invention. It is a perspective view of the conventional wafer processing tape. (A) is a top view of the conventional tape for wafer processing, (b) is sectional drawing by line BB of (a). It is sectional drawing which shows the state by which the tape for wafer processing and the ring frame for dicing were bonded together. It is a schematic diagram for demonstrating the malfunction of the conventional tape for wafer processing.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1A is a plan view of a wafer processing tape (dicing die bonding tape) according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line AA in FIG. is there.

  As shown in FIGS. 1A and 1B, the wafer processing tape 10 includes a long release film 11, an adhesive layer 12, an adhesive film 13, and a support member 14.

  The adhesive layer 12 is provided on the first surface of the release film and has a circular label shape corresponding to the shape of the wafer. The pressure-sensitive adhesive film 13 covers the adhesive layer 12 and has a circular label portion 13a provided so as to come into contact with the release film around the adhesive layer 12, and a periphery surrounding the outside of the circular label portion 13a. Part 13b. The peripheral portion 13b includes a form that completely surrounds the outer side of the circular label portion 13a and a form that is not completely surrounded as illustrated. The circular label portion 13a has a shape corresponding to a ring frame for dicing. The support member 14 is a second surface 11b of the release film 11 opposite to the first surface 11a on which the adhesive 12 and the pressure-sensitive adhesive film 13 are provided. Provided at both ends in the hand direction, the adhesive layer 12 has a thickness of 1.0 to 4.0 times the thickness of the adhesive layer 12.

  Hereafter, each component of the tape 10 for wafer processing of this embodiment is demonstrated in detail.

(Release film)
As the release film 11 used for the wafer processing tape 10 of the present invention, polyester (PET, PBT, PEN, PBN, PTT) type, polyolefin (PP, PE) type, copolymer (EVA, EEA, EBA) It is possible to use a film having a further improved adhesiveness and mechanical strength by partially replacing these materials and these materials. Moreover, the laminated body of these films may be sufficient.

  The thickness of the release film is not particularly limited and may be appropriately set, but is preferably 25 to 50 μm.

(Adhesive layer)
As described above, the adhesive layer 12 of the present invention is formed on the first surface 11a of the release film 11 and has a circular label shape corresponding to the shape of the wafer.

  The adhesive layer 12 is attached to the back surface of the chip when the chip is picked up after the semiconductor wafer or the like is bonded and diced, and is used as an adhesive when fixing the chip to the substrate or the lead frame. Is. As the adhesive layer 12, an adhesive containing at least one selected from an epoxy resin, an acrylic resin, and a phenol resin can be preferably used. In addition, a polyimide resin or a silicone resin can also be used. The thickness may be appropriately set, but is preferably about 5 to 100 μm.

(Adhesive film)
As described above, the adhesive film 13 of the present invention has the circular label portion 13a corresponding to the shape of the ring frame for dicing, and the peripheral portion 13b surrounding the outside. Such an adhesive film can be formed by removing the peripheral region of the circular label portion 13a from the film-like adhesive by precut processing.

  The adhesive film 13 is not particularly limited, and has a sufficient adhesive force so that the wafer does not peel when dicing the wafer, and can be easily peeled from the adhesive layer when picking up the chip after dicing. Any material that exhibits low adhesive strength may be used. For example, what provided the adhesive layer in the base film can be used conveniently.

  The base film of the adhesive film 13 can be used without particular limitation as long as it is a conventionally known base film. However, when a radiation curable material is used as the adhesive layer described later, the radiation transparency is used. It is preferable to use one having

For example, as the material, polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic Α-olefin homopolymer or copolymer such as acid methyl copolymer, ethylene-acrylic acid copolymer, ionomer or a mixture thereof, polyurethane, styrene-ethylene-butene or pentene copolymer, polyamide-polyol Listed are thermoplastic elastomers such as copolymers, and mixtures thereof. Further, the base film may be a mixture of two or more materials selected from these groups, or may be a single layer or a multilayer.
The thickness of the base film is not particularly limited and may be set as appropriate, but is preferably 50 to 200 μm.

The resin used for the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film 13 is not particularly limited, and a known chlorinated polypropylene resin, acrylic resin, polyester resin, polyurethane resin, epoxy resin, or the like used for the pressure-sensitive adhesive is used. can do.
It is preferable to prepare an adhesive by appropriately blending an acrylic adhesive, a radiation polymerizable compound, a photopolymerization initiator, a curing agent and the like into the resin of the adhesive layer 13. The thickness of the pressure-sensitive adhesive layer 13 is not particularly limited and may be appropriately set, but is preferably 5 to 30 μm.

  A radiation-polymerizable compound can be blended in the pressure-sensitive adhesive layer to facilitate peeling from the adhesive layer by radiation curing. As the radiation polymerizable compound, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally reticulated by light irradiation is used.

  Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene glycol diacrylate, 1,6 hexanediol diacrylate Acrylate, polyethylene glycol diacrylate, oligoester acrylate, and the like are applicable.

In addition to the above acrylate compounds, urethane acrylate oligomers can also be used. The urethane acrylate oligomer includes a polyol compound such as a polyester type or a polyether type, and a polyvalent isocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diene). A terminal isocyanate urethane prepolymer obtained by reacting isocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc.) with an acrylate or methacrylate having a hydroxyl group (for example, 2-hydroxyethyl) Acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc.) Obtained by the reaction.
The pressure-sensitive adhesive layer may be a mixture of two or more selected from the above resins.

  When using a photopolymerization initiator, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyldimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl Propane or the like can be used. The blending amount of these photopolymerization initiators is preferably 0.01 to 5 parts by mass with respect to 100 parts by mass of the acrylic copolymer.

(Support member)
The support member 14 is a second surface 11b of the release film 11 opposite to the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided, and the short direction of the release film 11 It is provided at both ends and has a thickness of 1.0 to 4.0 times the thickness of the adhesive layer 12. Thus, by providing the support member 14, when the wafer processing tape 10 is wound into a roll shape, the winding pressure applied to the tape can be dispersed or collected on the support member 14. It is possible to suppress the formation of transfer marks on the agent layer 12.

  Moreover, when forming a support member in the 1st surface 11a in which the adhesive bond layer 12 and the adhesive film 13 were provided, it is preferable to make the width | variety of a support layer into the range which does not cover the circular label part 13a, depending on the case. In contrast to the limitation, the configuration of the present embodiment can ensure a wide width of the support member 14 and more effectively suppress the generation of transfer marks.

Furthermore, when the support member is formed on the first surface 11a provided with the adhesive 12 and the pressure-sensitive adhesive film 13, the width of the support layer is limited, whereas in the configuration of the present embodiment, the support member 14 is used. Therefore, the generation of transfer marks can be more effectively suppressed.
Furthermore, by providing the support member 14 on the second surface 11b of the release film 11, an effect that the tolerance for the positional deviation of the support member 14 is increased can be obtained.

  In the region corresponding to the outside of the adhesive layer 12 provided on the first surface on the second surface 11b of the release film 11, that is, on the second surface 11b, the support member 14 is shown in FIG. It is preferable to provide in the area | region r from the edge part of the release film 11 to the adhesive bond layer 12 as shown to a). With such a structure, when the tape 10 is wound up, the adhesive layer 12 and the support member 14 provided on the second surface 11b of the release film 11 do not overlap with each other, thereby suppressing the generation of transfer marks. Not only can it be possible to prevent the support member 14 from being left on the adhesive layer 12.

  The thickness of the support member 14 is not less than 1.0 times and not more than 4.0 times the thickness of the adhesive layer 12. Since the support member 14 has a thickness of 1.0 times or more of the adhesive layer, when the tape 10 is wound up, the pressure-sensitive adhesive film 13 and the second surface 11b of the release film 11 that overlaps the surface thereof are formed. Since a space (hollow part) is formed between them without contact or without contact, the second surface 11b of the release film 11 is strongly applied to the flexible adhesive layer 12 via the adhesive film 13. It will not be pressed. Therefore, generation of transfer marks can be effectively suppressed. On the other hand, since the support member 14 has a thickness of 4.0 times or less that of the adhesive layer 12, the size of the space is controlled, and the space becomes too large. It is possible to prevent a state in which air easily enters the layers of the release film 11. In particular, when the support member 14 has a thickness equivalent to that of the adhesive layer 12, the winding width of the roll of the wafer processing tape falls within the same width as that without the support member 14, which is excellent in the storage process. FIG. 2 is a cross-sectional view showing an example of a support member 14 ′ that is thicker than the adhesive layer 12.

  The support member 14 can be provided intermittently or continuously along the longitudinal direction of the release film 11, but from the viewpoint of more effectively suppressing the generation of transfer marks, the longitudinal direction of the base film 11. It is preferable to provide continuously along.

The support member 14 of the present invention preferably has a linear expansion coefficient of 300 ppm / ° C. or less. For example, the wafer processing tape is kept at a low temperature of about −20 ° C. to 5 ° C. at the time of storage or transportation, and when the adhesive layer of the wafer processing tape is bonded to the wafer, an adhesive is used. In order to heat soften and improve adhesiveness, the wafer processing tape is placed in an environment with a large temperature change, for example, heat bonding at about 70 to 80 ° C. is performed on a heater table. When the dimension of the support member 14 is changed due to temperature change, air enters between the release film 11 and the adhesive film 13 and between the adhesive layer 12 and the adhesive film 13 to generate voids. A bonding failure may occur, which may lead to a decrease in yield in the subsequent wafer dicing step, tape expanding step, chip pick-up step, and mounting step. In the present invention, by using a support member having a low coefficient of linear expansion of 300 ppm / ° C. or less, generation of transfer marks on the adhesive layer 12 is sufficiently suppressed, and support is also provided in an environment where the temperature changes greatly. The dimensional change of the member 13 is small, and the generation of voids can be suppressed.
In order to more effectively suppress the generation of transfer marks and voids, the linear expansion coefficient of the support member 14 is preferably 150 ppm / ° C. or less, and more preferably 70 ppm / ° C. or less. The lower limit of the linear expansion coefficient is not particularly limited, and is usually 0.1 ppm / ° C.

The difference between the linear expansion coefficient of the support member 14 and the linear expansion coefficient of the release film 11 is preferably 250 ppm / ° C. or less. When the difference in linear expansion coefficient is larger than 250 ppm / ° C., a dimensional difference between the support member 14 and the release film 11 occurs due to a temperature change between a low temperature state during storage and transportation and a normal temperature state during use. There are various problems as follows.
(1) When a dimensional difference is caused by a temperature change, voids may be generated between the release film 11 and the adhesive film 13 and between the adhesive layer 12 and the adhesive film 13 as described above. .
(2) When the user handles the roll, the possibility that the winding will collapse increases. In more detail, even if it is wound normally at the time of manufacture and shipment, there is a possibility that a dimensional difference will occur between the user's refrigerated storage and the room temperature use, and the room temperature use to the refrigerated storage, and the winding may collapse. Increase.
(3) A gap is generated between the sheets wound in a roll shape due to the dimensional difference, and the possibility of contamination from the roll side surface increases.
(4) When the number of windings of the wafer processing tape is large or the product width is wide, the cooling rate is different between the roll core side and the roll outer peripheral side when refrigerated from room temperature. For this reason, the dimensional difference between the support member 14 and the release film 11 due to the linear expansion difference is different between the roll core side and the roll outer peripheral side, and the shape of the entire roll is likely to change.

In the present invention, the coefficient of linear expansion refers to the rate at which the spatial extent of an object increases when the temperature is changed under constant pressure. When the temperature is T and the solid length is L, the linear expansion coefficient α is given by the following equation.
α = (1 / L) ・ (∂L / ∂T)
The measurement of the linear expansion coefficient in the present invention is, for example, based on JIS K7197, a linear expansion coefficient test method by thermomechanical analysis of plastic, using a thermomechanical analyzer (TMA), 15 mm in length and 5 mm in width. A sample cut at a distance between chucks of 10 mm is attached, and measurement can be performed under the conditions of a tensile load of 10 g, a heating rate of 5 ° C./min, and a measurement temperature range of −20 ° C. to 50 ° C. in an N ₂ gas atmosphere.

  Further, the support member 14 is preferably made of a material having a certain coefficient of friction with respect to the adhesive film 13 from the viewpoint of preventing the winding deviation of the wafer processing tape 10. Thereby, winding deviation of tape 10 for wafer processing can be prevented, and the effect that high-speed winding and the number of winding can be increased is acquired.

  The static friction coefficient between the support member 14 and the base film of the adhesive film 13 is preferably 0.2 to 2.0, and more preferably 0.6 to 1.6. When the wafer processing tape is wound into a roll, the peripheral portion 13a of the adhesive film 13 provided on the first surface 11a side of the release film 11 and the second surface 11b side of the release film 11 are provided. Since the support member 14 comes into contact, when the coefficient of static friction between the support member 14 and the base film of the adhesive film 13 is as small as less than 0.2, winding misalignment is likely to occur at the time of manufacture or use. The handling becomes worse. On the other hand, when the ratio is larger than 2.0, the resistance between the base film of the adhesive film 13 and the support member 14 is too large, the handling property in the manufacturing process is deteriorated, or meandering is performed at the time of high-speed winding. Cause it. Therefore, by setting the static friction coefficient between the two in the above range, it is possible to prevent the winding deviation of the wafer processing tape 10, enable high-speed winding, and increase the number of windings.

In the present invention, the coefficient of static friction between the support member 14 and the base film of the pressure-sensitive adhesive film 13 can be obtained by the following measuring method based on JIS K7125.
The base film of the adhesive film 13 and the film sample of the support member 14 each cut to 25 mm (width) × 100 mm (length) are overlapped, and the lower film is fixed. Next, a weight of 200 g is placed on the laminated film as a load W, the upper film is pulled at a speed of 200 mm / min, and the force Fd (g) at the time of sliding is measured, and the static friction coefficient ( μd) is obtained.
μd = Fd / W

  As the support member 14, for example, an adhesive tape obtained by applying an adhesive to a resin film substrate can be suitably used. By sticking such an adhesive tape to predetermined positions on both end portions of the second surface 11b of the release film 11, the wafer processing tape 10 of this embodiment can be formed.

The base resin of the adhesive tape is not particularly limited as long as it satisfies the range of the linear expansion coefficient and can withstand the winding pressure, but has heat resistance, smoothness, and availability. From the viewpoint, it is preferable to select from polyethylene terephthalate (PET), polypropylene, and high-density polyethylene.
There is no limitation in particular about the composition and physical property of the adhesive of an adhesive tape, and what is necessary is just what does not peel from the release film 11 in the winding-up process and storage process of the tape 10. FIG.

  Further, as the support member 14, a colored support member may be used. By using such a colored support member, the type of tape can be clearly identified when the wafer processing tape is wound into a roll. For example, by changing the color of the colored support member 14 depending on the type and thickness of the wafer processing tape, the type and thickness of the tape can be easily identified, and the occurrence of human error is suppressed and prevented. can do.

  Further, the wafer processing tape 10 has a ratio Eb / Ea between the tensile storage elastic modulus Eb of the adhesive film 13 at 23 ° C. and the tensile storage elastic modulus Ea of the release film 11 at 23 ° C. in the range of 0.001 to 100. It is preferable to be within.

  The larger the value of Eb / Ea, the harder the adhesive film 13 and the softer the release film 11. On the other hand, the smaller the value of Eb / Ea, the softer the adhesive film 13 and the harder the release film 11. According to the said structure, since Eb / Ea is 0.001 or more, the hardness (tensile storage elastic modulus Eb) of an adhesive film becomes more than fixed. Therefore, it is possible to suppress the generation of transfer marks on the adhesive layer 12 constituting the wafer processing tape 10. Further, since the Eb / Ea is 0.001 or more and the hardness (tensile storage elastic modulus Eb) of the adhesive film 13 is a certain value or more, when the adhesive film 13 is bonded to the semiconductor wafer W, The release film 11 can be suitably peeled (velocated).

  Further, since the Eb / Ea is 100 or less, the hardness of the release film 11 (tensile storage elastic modulus Ea) becomes a certain level or more, while the hardness of the adhesive film 13 (tensile storage elastic modulus Eb) is: Below a certain level. Therefore, it is possible to prevent the release film 11 from being broken when the adhesive layer 12 is bonded to the release film 11, and the surface of the adhesive layer 12 is damaged or air bubbles are mixed between the films. Can be prevented. As a result, it is possible to suppress the generation of voids between the adhesive layer 12 and the semiconductor wafer W when the release film 11 is lifted or the semiconductor wafer W is mounted.

  Thus, according to the said structure, when winding up in roll shape, it can suppress that a transfer trace generate | occur | produces in the adhesive bond layer 12. FIG. In addition, it is possible to suppress the generation of voids between the adhesive layer 12 and the semiconductor wafer W when the release film 11 floats or the semiconductor wafer W is mounted.

  The said structure WHEREIN: It is preferable that the thickness of the release film 11 is 10-100 micrometers, and it is preferable that the thickness of the adhesive film 13 is 25-180 micrometers.

  Moreover, in the said structure, it is preferable that the tensile storage elastic modulus Eb of the adhesive film 13 in 23 degreeC is 1-500 Mpa, and the tensile storage elastic modulus Ea of the release film 11 in 23 degreeC is 1-5000 Mpa. Is preferred.

  Moreover, in the said structure, it is preferable that the adhesive bond layer 12 has the glass transition temperature within the range of 0-100 degreeC, and the tensile storage elastic modulus in 23 degreeC before hardening is the range of 50 MPa-5000 MPa. By setting the glass transition temperature of the adhesive layer 12 to 0 ° C. or higher, it is possible to suppress the tackiness of the adhesive layer 12 in the B-stage state from being increased, and to maintain good handleability. In addition, it is possible to prevent a part of the adhesive layer 12 from melting and sticking the adhesive to the semiconductor chip during dicing. As a result, a good pick-up property of the semiconductor chip can be maintained. On the other hand, by setting the glass transition temperature to 100 ° C. or lower, it is possible to prevent the fluidity of the adhesive layer 12 from being lowered. Also, good adhesion with the semiconductor wafer W can be maintained. In addition, when the adhesive bond layer 12 is a thermosetting type, the glass transition temperature of the adhesive bond layer 12 means the thing before thermosetting. Further, by setting the tensile storage modulus at 23 ° C. before curing of the adhesive layer 12 to 50 MPa or more, a part of the adhesive layer 12 is melted and the pressure-sensitive adhesive adheres to the semiconductor chip during dicing. Can be prevented. On the other hand, by setting the tensile storage elastic modulus to 5000 MPa or less, good adhesion to the semiconductor wafer W and the substrate can also be maintained.

  Further, in the wafer processing tape 10, when the thickness of the release film 11 is Ta and the thickness of the adhesive film 13 is Tb, Ta / Tb is preferably in the range of 0.07 to 2.5.

  For example, when the thickness Ta of the release film 11 is constant, the Ta / Tb becomes thicker as the value is smaller. According to the said structure, since Ta / Tb is 0.07 or more, the level | step difference between the part by which the adhesive film 13 is laminated | stacked and the part which is not laminated | stacked is below fixed. Therefore, generation of transfer marks can be suppressed. Further, since the Ta / Tb is 0.07 or more and the thickness of the adhesive film 13 is larger than that of the release film 11, the stress can be absorbed by the thickness of the release film 11, and the transfer mark is generated. Can be suppressed. Further, since the Ta / Tb is 0.07 or more and the thickness of the adhesive film 13 is thicker than that of the release film 11, the adhesive film 13 and the release film 11 are bonded to the semiconductor wafer W. Can be suitably peeled off. For example, when the thickness Tb of the adhesive film 13 is constant, the Ta / Tb becomes thinner as the value becomes smaller. Since the Ta / Tb is 2.5 or less, the thickness of the release film 11 is a certain value or less. Therefore, the followability to the level | step difference of the part by which the adhesive film 13 is laminated | stacked and the part which is not laminated | stacked is favorable. Further, since the Ta / Tb is 2.5 or less and the thickness of the release film 11 is less than a certain value, the pressure when the adhesive film 13 is laminated on the release film can be made uniform, Can be prevented. Thus, according to the above configuration, when the wafer processing tape 10 in which the adhesive layer 12 and the release film 11 are sequentially laminated on the pressure-sensitive adhesive film 13 is wound into a roll shape, the transfer mark is formed on the adhesive layer. 12 can be suppressed.

  In the above configuration, the peel force F1 between the adhesive layer 12 and the release film 11 in a T-type peel test under the conditions of a temperature of 23 ± 2 ° C. and a peel speed of 300 mm / min is 0.025 to 0.075 N. The peel force F2 between the adhesive layer 12 and the adhesive film 13 is in the range of 0.08 to 10 N / 100 mm, and the F1 and the F2 satisfy the relationship of F1 <F2. Is preferred.

  The wafer processing tape 10 is manufactured while applying tensile tension to the adhesive film 13, the adhesive layer 12, and the release film 11 from the viewpoint of preventing the occurrence of loosening, winding deviation, positional deviation, voids (bubbles), and the like. As a result, the wafer processing tape 10 is manufactured in a state where a tensile residual strain exists in any of the films constituting the wafer processing tape 10. This tensile residual strain causes shrinkage in each film, for example, when transported at a low temperature of −30 to 10 ° C. or stored for a long time. Furthermore, since each film has different physical properties, the degree of shrinkage also differs. For example, the pressure-sensitive adhesive film 13 has the largest degree of shrinkage among the films, and the release film 11 has the smallest degree of shrinkage. As a result, interfacial peeling occurs between the pressure-sensitive adhesive film 13 and the adhesive layer 12, and a film floating phenomenon of the release film 11 is caused.

  The said structure makes peeling force F1 between the adhesive layer 12 and the release film 11 into the range of 0.025-0.075N / 100mm, and makes peeling force F2 between the adhesive layer 12 and the adhesion film 13 into the range. It is set as the structure which satisfy | fills the relationship of F1 <F2, after setting it as the range of 0.08-10N / 100mm. As described above, since the pressure-sensitive adhesive film has the largest shrinkage in each film, the peeling force F2 between the adhesive layer 12 and the pressure-sensitive adhesive film 13 is greater than the peeling force F1 between the adhesive layer 12 and the release film 11. By enlarging, the shrinkage of the pressure-sensitive adhesive film 13 having the largest shrinkage rate is suppressed, and the interface peeling between the pressure-sensitive adhesive film 13 and the adhesive layer 12 and the film lifting phenomenon of the release film 11 are prevented. Furthermore, it is possible to prevent a part or all of the adhesive layer 12 from being transferred to the release film 11.

  Next, examples of the present invention will be described, but the present invention is not limited to these examples.

(1) Release film The release film shown below was prepared.
Release film A1: Polyethylene terephthalate film having a thickness of 25 μm and subjected to silicone release treatment (tensile storage elastic modulus is 4070 MPa, linear expansion coefficient is 60 ppm)
Release film A2: Polyethylene terephthalate film having a thickness of 100 μm and subjected to silicone release treatment (tensile storage elastic modulus is 3910 MPa, linear expansion coefficient is 60 ppm)
Release film A3: Polyethylene terephthalate film having a thickness of 12 μm and subjected to silicone release treatment (tensile storage elastic modulus is 4020 MPa, linear expansion coefficient is 60 ppm)
Release film A4: Polyethylene terephthalate film having a thickness of 38 μm and subjected to a silicone release treatment (tensile storage elastic modulus is 4020 MPa, linear expansion coefficient is 60 ppm)
Release film A5: Low density polyethylene (LDPE) film treated with silicone release with a thickness of 25 μm (tensile storage modulus is 105 MPa, linear expansion coefficient is 230 ppm)

(2) Production of adhesive film <Adhesive film B1>
As an acrylic copolymer having a functional group, a copolymer consisting of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid and having a ratio of 2-ethylhexyl acrylate of 60 mol% and a mass average molecular weight of 700,000 was prepared. . Next, 2-isocyanatoethyl methacrylate was added so that the iodine value would be 20, and an acrylic copolymer (b-) having a glass transition temperature of −50 ° C., a hydroxyl value of 10 mgKOH / g, and an acid value of 5 mgKOH / g. 1) was prepared.

To 100 parts by mass of the acrylic copolymer (b-1), 5 parts by mass of Coronate L (manufactured by Nippon Polyurethane) was added as a polyisocyanate, and 3 parts by mass of Esacure KIP150 (manufactured by Lamberti) was added as a photopolymerization initiator. The mixture was dissolved in ethyl acetate and stirred to prepare an adhesive composition.
Next, this pressure-sensitive adhesive composition was applied to a release liner composed of a polyethylene terephthalate film subjected to a release treatment so that the thickness after drying was 10 μm, dried at 110 ° C. for 3 minutes, and then ethylene / acetic acid. A base film (thickness: 50 μm) made of a vinyl copolymer (manufactured by Tosohichi Co., Ltd., Ultrasen 636) was bonded to prepare an adhesive film B1 having a thickness of 60 μm. The tensile storage elastic modulus was 40 MPa.

<Adhesive film B2>
The pressure-sensitive adhesive composition was applied to a release liner composed of a polyethylene terephthalate film subjected to a release treatment so that the thickness after drying was 5 μm, dried at 110 ° C. for 3 minutes, and then low-density polyethylene (LDPE, A pressure-sensitive adhesive film B2 having a thickness of 45 μm was prepared by bonding to a base film (thickness: 40 μm) made of no release treatment. The tensile storage modulus was 105 MPa.

<Adhesive film B3>
The pressure-sensitive adhesive composition was applied to a release liner made of a polyethylene terephthalate film subjected to a release treatment so that the thickness after drying was 10 μm, dried at 110 ° C. for 3 minutes, and then mixed with ethylene / methacrylic acid copolymer. An adhesive film B3 having a thickness of 160 μm was prepared by bonding to a base film (thickness 150 μm) made of a combined ionomer (Mitsui / DuPont Polychemical, Himiran 1554). The tensile storage elastic modulus was 301 MPa.

<Adhesive film B4>
The pressure-sensitive adhesive composition was applied to a release liner made of a polyethylene terephthalate film subjected to a release treatment so that the thickness after drying was 10 μm, dried at 110 ° C. for 3 minutes, and then mixed with ethylene / methacrylic acid copolymer. An adhesive film B4 having a thickness of 120 μm was prepared by bonding to a base film (thickness 110 μm) made of a combined ionomer (Mitsui / DuPont Polychemical, Himiran 1554). The tensile storage elastic modulus was 289 MPa.

<Adhesive film B5>
The pressure-sensitive adhesive composition was applied to a release liner made of a polyethylene terephthalate film subjected to a release treatment so that the thickness after drying was 10 μm, dried at 110 ° C. for 3 minutes, and then an ethylene / propylene block. A base film (thickness 110 μm) made of a copolymer (manufactured by Prime Polymer Co., Ltd., Prime Polyp F707W) was bonded to prepare an adhesive film B5 having a thickness of 120 μm. The tensile storage elastic modulus was 980 MPa.

(3) Formation of adhesive layer <Adhesive layer C1>
Epoxy resin “YX4000” (Mitsubishi Chemical, biphenyl novolac type epoxy resin, epoxy equivalent 185) 15.0 parts by mass, phenol resin “LF-6161” (DIC, novolac phenolic resin, hydroxyl equivalent 118) 40.0 parts by mass 45.0 parts by weight of epoxy resin “Epicoat 828” (Mitsubishi Chemical, bisphenol A type epoxy resin, epoxy equivalent 190), “Aerosil R972” which is a silica filler (manufactured by Nippon Aerosil, average particle size of primary particle size 0. 016 μm) MEK was added to a composition composed of 5 parts by mass, and mixed by stirring to obtain a uniform composition.
To this, 66.7 parts by mass of an acrylic copolymer containing a monomer unit derived from glycidyl acrylate or glycidyl methacrylate as a polymer containing a functional group (weight average molecular weight 850,000, Tg 20 ° C.), and “KBM-802 as a coupling agent” "(Shin-Etsu Silicone, Mercaptopropyltrimethoxysilane) 0.6 parts by mass, and" Cureazole 2PHZ-PW "(made by Shikoku Kasei, 2-phenyl-4,5-dihydroxymethylimidazole, decomposition temperature as a curing accelerator) (230 ° C.) 0.1 part by mass was added and mixed with stirring until uniform. Furthermore, this was filtered with a 100-mesh filter and vacuum degassed to obtain an adhesive composition varnish (c-1).

  This varnish (c-1) was coated on the release film A1 with a coater so that the dry film thickness was 30 μm, and dried at 120 ° C. for 5 minutes to prepare an adhesive layer C1 having a thickness of 30 μm.

<Adhesive layer C2>
Varnish (c-1) was coated on the release film A2 with a coater so that the dry film thickness was 30 μm, and dried at 120 ° C. for 5 minutes to prepare an adhesive layer C2 having a thickness of 30 μm.

<Adhesive layer C3>
Varnish (c-1) was coated on the release film A1 with a coater so that the dry film thickness was 60 μm, and dried at 120 ° C. for 8 minutes to prepare an adhesive layer C3 having a thickness of 60 μm. Thereafter, the adhesive layer C3 was transferred from the release film A1 to the release film A3.

<Adhesive layer C4>
Two varnishes (c-1) were coated on the release film A4 with a coater so that the dry film thickness was 60 μm, dried at 120 ° C. for 8 minutes, and laminated at 70 ° C. Thus, an adhesive layer C4 having a thickness of 120 μm was produced, and one release film A4 was peeled off.

<Adhesive layer C5>
Varnish (c-1) was coated on the release film A4 with a coater so that the dry film thickness was 60 μm, and dried at 120 ° C. for 8 minutes to prepare an adhesive layer C5 having a thickness of 60 μm.

<Adhesive layer C6>
Varnish (c-1) was coated on the release film A4 with a coater so that the dry film thickness was 60 μm, and dried at 120 ° C. for 8 minutes to prepare an adhesive layer C6 having a thickness of 60 μm. Thereafter, the adhesive layer C6 was transferred from the release film A4 to the release film A5.

<Adhesive layer C7>
Varnish (c-1) was coated on the release substrate A1 with a coater so that the dry film thickness was 20 μm, and dried at 120 ° C. for 5 minutes to prepare an adhesive layer C7 having a thickness of 20 μm.

<Adhesive layer C8>
40 parts by mass of epoxy resin “1002” (Mitsubishi Chemical, solid bisphenol A type epoxy resin, epoxy equivalent 600), epoxy resin “806” (Mitsubishi Chemical, bisphenol F type epoxy resin, epoxy equivalent 160, specific gravity 1.20) 100 parts by mass, 5 parts by mass of curing agent “Dyhard100SF” (Degusa, dicyandiamide), 200 parts by mass of silica filler “SO-C2” (manufactured by Admafine, average particle size 0.5 μm), and “Aerosil” which is a silica filler MEK was added to a composition composed of 3 parts by mass of “R972” (manufactured by Nippon Aerosil Co., Ltd., average particle size of primary particle size: 0.016 μm), and stirred and mixed to obtain a uniform composition.
To this, 100 parts by mass of phenoxy resin “PKHC” (INCHEM, mass average molecular weight 43,000, glass transition temperature 89 ° C.), “KBM-802” (manufactured by Shin-Etsu Silicone, mercaptopropyltrimethoxysilane) as a coupling agent 0 .6 parts by mass and 0.5 part by mass of “Cureazole 2PHZ-PW” (manufactured by Shikoku Chemicals, 2-phenyl-4,5-dihydroxymethylimidazole, decomposition temperature 230 ° C.) as a curing accelerator are added uniformly. Stir until mixed. Furthermore, this was filtered with a 100-mesh filter and vacuum degassed to obtain an adhesive composition varnish (c-2).

  This varnish (c-2) was coated on the release film A4 with a coater so that the dry film thickness was 60 μm, and dried at 120 ° C. for 8 minutes to prepare an adhesive layer C8 having a thickness of 60 μm.

(4) Production of support member <support member D1>
The pressure-sensitive adhesive composition was applied to a release liner made of a polyethylene terephthalate film subjected to a release treatment so that the thickness after drying was 5 μm, dried at 110 ° C. for 3 minutes, and then polyethylene terephthalate (release treatment) A support member D1 having a thickness of 30 μm was prepared by pasting together with a base film (thickness: 25 μm). The linear expansion coefficient was 60 ppm.

<Supporting member D2>
The pressure-sensitive adhesive composition was applied to a release liner made of a polyethylene terephthalate film subjected to a release treatment so that the thickness after drying was 25 μm, dried at 110 ° C. for 3 minutes, and then polypropylene (OPP, release). A support film D2 having a thickness of 75 μm was prepared by bonding to a base film (thickness 50 μm) made of no treatment. The linear expansion coefficient was 120 ppm.

<Support member D3>
TW-PLT (manufactured by Tanimura), which is a commercially available clean line tape for clean rooms, was slit to a width of 36 mm and used as the support member D3. It had a resin film base material in which a polyvinyl chloride layer having a thickness of 75 μm and a polyethylene terephthalate layer having a thickness of 12 μm were laminated, had a total thickness of 142 μm and a linear expansion coefficient of 80 ppm.

<Support member D4>
The pressure-sensitive adhesive composition was applied to a release liner made of a polyethylene terephthalate film subjected to a release treatment so that the thickness after drying was 25 μm, dried at 110 ° C. for 3 minutes, and then low-density polyethylene (LDPE, A support member D4 having a thickness of 75 μm was produced by pasting and transferring a resin film substrate (thickness: 50 μm) made of a resin film (without release treatment). The linear expansion coefficient was 230 ppm.

<Supporting member D5>
The pressure-sensitive adhesive composition was applied to a release liner made of a polyethylene terephthalate film subjected to a release treatment so that the thickness after drying was 25 μm, dried at 110 ° C. for 3 minutes, and then polyethylene terephthalate (release treatment) A support member D5 having a thickness of 75 μm was produced by pasting and transferring a resin film substrate (having a thickness of 50 μm). The linear expansion coefficient was 60 ppm.

<Support member D6>
The pressure-sensitive adhesive composition was applied to a release liner made of a polyethylene terephthalate film subjected to a release treatment so that the thickness after drying was 25 μm, dried at 110 ° C. for 3 minutes, and then polyethylene terephthalate (release treatment) None) and a substrate film (thickness: 75 μm) made of, and transferred, to produce a support member D6 having a thickness of 100 μm. The linear expansion coefficient was 60 ppm.

<Support member D7>
The pressure-sensitive adhesive composition was applied to a release liner made of a polyethylene terephthalate film subjected to a release treatment so that the thickness after drying was 10 μm, dried at 110 ° C. for 3 minutes, and then polyethylene terephthalate (release treatment). A support member D7 having a thickness of 26 μm was produced by pasting and transferring the resin film substrate (having a thickness of 16 μm). The linear expansion coefficient was 60 ppm.

Example 1
The adhesive layer C1 formed on the release film A1 that has been refrigerated is returned to room temperature and adjusted so that the depth of the adhesive layer is less than half the thickness of the release film. Then, circular pre-cut processing with a diameter of 320 mm was performed. Thereafter, unnecessary portions of the adhesive layer were removed, and the adhesive film B1 was laminated to the release film A1 at room temperature so that the adhesive layer was in contact with the adhesive layer. Then, the adhesive film B1 is adjusted so as to have a cut depth of ½ or less of the thickness of the release film, and is subjected to circular precut processing with a diameter of 370 mm concentrically with the adhesive layer, and a tension of 15 N And wound up 300 sheets. Next, it is a surface opposite to the surface on which the adhesive layer and the adhesive film on the release film A1 are provided, and the support member D1 is bonded to both ends in the short direction of the release film A1, The wafer processing tape of Example 1 was produced.

(Examples 2 to 8, Comparative Examples 1 and 2)
In the same manner as in Example 1, the wafer processing tapes of Examples 2 to 8 and Comparative Examples 1 and 2 were produced in the combinations shown in Table 1.

[Evaluation of inhibition of air intrusion and transfer marks]
The wafer processing tapes of Examples and Comparative Examples are stored in a polyethylene bag, deaerated, heat sealed, attached with side plates made of polypropylene at both ends, and melted by hanging two PP bands so that they form a cross. Two types of packing bodies that were worn and joined were prepared. After storing these packages in the refrigerator (5 ° C) for one month, take them out of the refrigerator, and store one of the various packages in a packing box and place it on a transport truck between Hiratsuka and Akita (about 1000 km) ) Was reciprocated over 3 days in a refrigerated state (0 to 10 ° C.). The other was stored in a packing box with plate-shaped dry ice, placed on a transport truck, and traveled back and forth between Hiratsuka and Akita (about 1000 km) over 3 days. At this time, the minimum temperature of the packaging box was -43 ° C, and the maximum temperature was 7 ° C. Then, unpack each package, return the roll to room temperature, open the packaging bag, unwind the roll, and visually observe the intrusion of air between the adhesive layer and the adhesive film and the presence or absence of transfer marks did. The results are shown in Table 2.

[Evaluation of inhibition of voids after mounting]
The adhesive sheets of Examples and Comparative Examples were accommodated in polyethylene bags, degassed, and heat sealed to attach polypropylene side plates to both ends. Further, the two PP bands were hung in a cross so as to be fused and joined. After storing these packages in the refrigerator (5 ° C) for 1 month, take them out of the refrigerator, store them in a packing box together with plate-shaped dry ice, and place them on a truck for transportation between Hiratsuka and Akita (about 1000 km). Round trip over 3 days. At this time, the minimum temperature of the packaging box was -43 ° C, and the maximum temperature was 7 ° C. Thereafter, each package was unpacked, the roll was returned to room temperature, the packaging bag was opened, and the semiconductor wafer was mounted. Thereafter, the presence or absence of voids (bubbles) on the bonding surface between the adhesive layer and the semiconductor wafer was confirmed with a microscope. The results are shown in Table 2. A semiconductor wafer having a size of 12 inches and a thickness of 50 μm was used. The mounting conditions of the semiconductor wafer were as follows.

<Bonding conditions>
Pasting device: Wafer mounter DAM-812M (manufactured by Takatori)
Pasting speed meter: 50 mm / sec Pasting pressure: 0.1 MPa
Pasting temperature: 100 ° C

  As shown in Table 2, since the wafer processing tape according to the example is 1.0 times to 3.75 times the thickness of the adhesive layer, the transfer mark does not occur, Even when the temperature change was severe, no intrusion of air into the adhesive layer was observed, so that no voids were generated and good results were obtained.

  On the other hand, the wafer processing tape according to Comparative Example 1 has a thickness of the support member that is five times the thickness of the adhesive layer. Although no intrusion was observed, if the temperature change was severe, air intrusion into the inside of the adhesive layer was seen, and even when the adhesive was bonded to a semiconductor wafer at 100 ° C. A void occurred. Moreover, since the thickness of the holding member of the wafer processing tape according to Comparative Example 2 is 0.87 times the thickness of the adhesive layer, no intrusion of air into the adhesive layer was observed. Even when transfer marks were generated and the adhesive was bonded to a semiconductor wafer at 100 ° C., some voids were generated.

10: Wafer processing tape 11: Release film 12: Adhesive layer 13: Adhesive film 13a: Circular label part 13b: Peripheral parts 14, 14 ', 14 ": Support member

Claims (15)

A long release film,
An adhesive layer having a predetermined planar shape provided on the first surface of the release film;
A label portion having a predetermined planar shape so as to cover the adhesive layer and contact the release film around the adhesive layer; and a peripheral portion surrounding the outside of the label portion; An adhesive film having
The release film is provided on the second surface opposite to the first surface on which the adhesive layer and the pressure-sensitive adhesive film are provided, and at both ends in the short direction of the release film. A support member,
The wafer processing tape, wherein the support member has a thickness of 1.0 to 4.0 times the thickness of the adhesive layer.   The tape for wafer processing according to claim 1, wherein the support member has a linear expansion coefficient of 300 ppm / ° C. or less.   3. The wafer processing tape according to claim 1, wherein a difference between a linear expansion coefficient of the support member and a linear expansion coefficient of the release film is 250 ppm / ° C. or less. The adhesive film has an adhesive layer and a base film,
4. The wafer processing tape according to claim 1, wherein a coefficient of static friction between the base film and the support member is 0.2 to 2.0. 5.   The said support member is provided in the area | region corresponding to the outer side of the said adhesive bond layer provided in the said 1st surface on the said 2nd surface of the said release film. The wafer processing tape according to claim 4.   The tape for wafer processing according to any one of claims 1 to 5, wherein the support member is continuously provided along a longitudinal direction of the release film.   7. The wafer processing tape according to claim 1, wherein the support member has a thickness equal to or greater than a thickness of the adhesive layer. 8.   The tape for wafer processing according to claim 1, wherein the support member is colored.   9. The wafer processing tape according to claim 8, wherein the support member is colored according to a type of the wafer processing tape.   9. The wafer processing tape according to claim 8, wherein the support member is colored according to a thickness of the wafer processing tape.   The wafer processing tape according to claim 1, wherein the support member has a laminated structure of two or more layers.   The said support member is the adhesive tape which apply | coated the adhesive agent to the resin film base material selected from the group which consists of a polyethylene terephthalate, a polypropylene, and a high density polyethylene, The Claim 1 characterized by the above-mentioned. 11. The wafer processing tape according to any one of 11 above.   The ratio Eb / Ea between the tensile storage elastic modulus Eb of the pressure-sensitive adhesive film at 23 ° C and the tensile storage elastic modulus Ea of the release film at 23 ° C is 0.001 to 100. The tape for wafer processing of any one of Claim 12.   The ratio Ta / Tb between the thickness Ta of the release film and the thickness Tb of the pressure-sensitive adhesive film is 0.07 to 2.5, according to any one of claims 1 to 13. The tape for wafer processing as described.   In a T-type peel test under conditions of a temperature of 23 ± 2 ° C. and a peel speed of 300 mm / min, the peel force F1 between the adhesive layer and the release film is 0.025 to 0.075 N / 100 mm, The peeling force F2 between the said adhesive bond layer and the said adhesion film is 0.08-10N / 100mm, and it is F1 <F2, It is any one of Claims 1-14 characterized by the above-mentioned. Wafer processing tape.

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