JP2016066685A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase a recovery of a process liquid.SOLUTION: A substrate processing apparatus comprises: a substrate-supporting part; and a top plate 123; a chamber in which the substrate-supporting part and the top plate are contained; a substrate rotating mechanism 15 which turns a substrate 9 together with the substrate-supporting part and the top plate 123; a liquid-receiving part 16 disposed around the substrate-supporting part for receiving a process liquid scattered from the rotating substrate 9 radially toward outside; and a collecting port 166 serving to collect the process liquid received by the liquid-receiving part 16. The substrate processing apparatus further comprises: an exhaust port provided independently of the collecting port 166; a plurality of heating nozzles 180 for heating the substrate 9; and a cooling part 51 for cooling the atmosphere near an outer peripheral portion of the top plate 123. In the substrate processing apparatus, gaseous process liquid spreading from a space between the substrate 9 and the top plate 123 toward around the space is cooled by the cooling part 51 and thus liquefied and collected by the collecting port 166. Thus, the recovery of the process liquid can be increased.SELECTED DRAWING: Figure 10

Description

  The present invention relates to a substrate processing apparatus for processing a substrate.

  Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as “substrate”), various types of processing are performed on the substrate using various types of substrate processing apparatuses. For example, by supplying a chemical solution to a substrate having a resist pattern formed on the surface, a process such as etching is performed on the surface of the substrate. In addition, after the etching process is completed, a process of removing the resist on the substrate or cleaning the substrate is also performed.

  In the substrate processing apparatus of Patent Document 1, a top plate that is a substantially disc-shaped shielding plate that covers the upper surface of the substrate is provided. The top plate rotates together with the substrate support portion while being engaged with the substrate support portion when the chemical solution is supplied to the substrate for processing. The chemical solution supplied to the substrate is scattered radially outward by the rotation of the substrate, and is received and collected by the cup portion.

JP 2014-49605 A

  By the way, in a substrate processing apparatus like patent document 1, a chemical | medical solution process may be performed, heating a board | substrate. In this case, when a part of the chemical solution supplied to the substrate is vaporized or misted, the chemical solution may not be scattered to the cup portion, and the recovery rate of the chemical solution may be reduced. In addition, the vaporized chemical solution may rise from the outer peripheral edge of the top plate and wrap around to the back side (that is, the upper surface side) of the top plate and adhere to the inner surface of the apparatus at a position where cleaning is difficult.

  The present invention has been made in view of the above problems, and has as its main object to improve the recovery rate of the processing liquid.

  The invention according to claim 1 is a substrate processing apparatus for processing a substrate, wherein the substrate support unit supports the substrate in a horizontal state, the shielding plate disposed to face the upper surface of the substrate, and the substrate support And a chamber for housing the shielding plate therein, a substrate rotating mechanism for rotating the substrate together with the substrate supporting portion around a central axis facing in the vertical direction, and the substrate rotating portion disposed around the substrate supporting portion and rotating A liquid receiving portion for receiving a processing liquid scattered radially outward from the substrate; a recovery port for recovering the processing liquid received by the liquid receiving portion; and the recovery port is provided independently of the inside of the chamber. A discharge port for discharging the gas, a heating unit for heating the substrate, and a cooling unit for cooling the atmosphere in the vicinity of the outer peripheral portion of the shielding plate.

  A second aspect of the present invention is the substrate processing apparatus according to the first aspect, wherein the heating unit is a fluid supply unit that supplies a fluid having a temperature higher than that of the substrate to the substrate.

  Invention of Claim 3 is the substrate processing apparatus of Claim 1 or 2, Comprising: The outer periphery which is located above the said upper surface of the said board | substrate at the said outer peripheral part of the said shielding board, and spreads in the circumferential direction An opening is provided, and the cooling part is provided in the circumferential direction along the outer peripheral opening in the vicinity of the outer peripheral opening.

  A fourth aspect of the present invention is the substrate processing apparatus according to any one of the first to third aspects, wherein the cooling unit supplies cooling gas from above to the lower side of the outer peripheral portion of the shielding plate. It is a cooling gas supply part to supply.

  Invention of Claim 5 is the substrate processing apparatus of Claim 4, Comprising: The said heating part is a heating gas supply part which supplies the heating gas which heats the said board | substrate, The said heating gas supply part and The cooling gas supply unit is connected to a vortex tube type gas supply source that generates heating gas and cooling gas.

  In the present invention, the recovery rate of the processing liquid can be improved.

It is sectional drawing of the substrate processing apparatus which concerns on one embodiment. It is sectional drawing of a substrate processing apparatus. It is a bottom view of a top plate. It is sectional drawing of a chamber cover part and a top plate. It is a bottom view of a chamber lid part and a top plate. It is a block diagram which shows a gas-liquid supply part and a gas-liquid discharge part. It is a figure which shows the flow of a process in a substrate processing apparatus. It is sectional drawing of a substrate processing apparatus. It is sectional drawing of a substrate processing apparatus. It is sectional drawing of a substrate processing apparatus.

  FIG. 1 is a cross-sectional view showing a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a single-wafer type apparatus that supplies a processing liquid to a substantially disk-shaped semiconductor substrate 9 (hereinafter simply referred to as “substrate 9”) to process the substrates 9 one by one. In FIG. 1, the provision of parallel oblique lines is omitted in the cross section of a part of the configuration of the substrate processing apparatus 1 (the same applies to other cross sectional views).

  The substrate processing apparatus 1 includes a chamber 12, a top plate 123, a chamber opening / closing mechanism 131, a substrate support part 141, a substrate rotating mechanism 15, a liquid receiving part 16, a cover 17, and a cooling part 51. The cover 17 covers the upper side and the side of the chamber 12.

  The chamber 12 includes a chamber main body 121 and a chamber lid portion 122. The chamber 12 has a substantially cylindrical shape centering on a central axis J1 facing in the vertical direction. The chamber main body 121 includes a chamber bottom portion 210 and a chamber side wall portion 214. The chamber bottom portion 210 includes a substantially disc-shaped bottom center portion 211, a substantially cylindrical bottom inner side wall portion 212 that extends downward from an outer edge portion of the bottom center portion 211, and a radially outer side from the lower end of the bottom inner wall portion 212. A generally annular plate-shaped annular bottom 213 that extends outward, a substantially cylindrical bottom outer wall 215 that extends upward from the outer edge of the annular bottom 213, and a radially outward direction from the upper end of the bottom outer wall 215. And a base portion 216 having a substantially annular plate shape extending to the top.

  The chamber side wall 214 has a substantially cylindrical shape centered on the central axis J1. The chamber side wall portion 214 projects upward from the inner edge portion of the base portion 216. A member forming the chamber side wall portion 214 also serves as a part of the liquid receiving portion 16 as described later. In the following description, a space surrounded by the chamber side wall portion 214, the bottom outer wall portion 215, the annular bottom portion 213, the bottom inner sidewall portion 212, and the outer edge portion of the bottom central portion 211 is referred to as a lower annular space 217. A discharge port 218 for discharging the gas and liquid in the chamber 12 is provided at the bottom of the lower annular space 217.

  When the substrate 9 is supported by the substrate support portion 141, the lower surface 92 of the substrate 9 faces the upper surface of the bottom center portion 211 of the chamber bottom portion 210. In the following description, the bottom center portion 211 of the chamber bottom portion 210 is referred to as a “lower surface facing portion 211”.

  The chamber lid part 122 has a substantially covered cylindrical shape perpendicular to the central axis J1 and includes the upper part of the chamber 12. The chamber lid part 122 includes a substantially disc-shaped canopy part 227 and a substantially cylindrical lid lower cylinder part 228 that extends downward from the outer edge of the canopy part 227. The chamber lid 122 closes the upper opening of the chamber body 121. FIG. 1 shows a state in which the chamber lid 122 is spaced upward from the chamber body 121. As shown in FIG. 2, when the chamber lid part 122 closes the upper opening of the chamber body 121, the lower end part of the lower lid cylinder part 228 is in contact with the upper part of the chamber side wall part 214.

  The chamber opening / closing mechanism 131 shown in FIG. 1 moves the chamber lid 122, which is a movable part of the chamber 12, relative to the chamber body 121, which is another part of the chamber 12, in the vertical direction. The chamber opening / closing mechanism 131 is a lid raising / lowering mechanism that raises / lowers the chamber lid 122. When the chamber lid 122 moves in the vertical direction by the chamber opening / closing mechanism 131, the top plate 123 also moves in the vertical direction together with the chamber lid 122. In the substrate processing apparatus 1, as shown in FIG. 2, the chamber lid 122 is in contact with the chamber main body 121 to close the upper opening, and the chamber lid 122 is pressed toward the chamber main body 121. The chamber space 120 which is the 12 internal space is sealed.

  The substrate support 141 shown in FIG. 1 is a substantially annular member centered on the central axis J1. The substrate support portion 141 is disposed in the chamber space 120 that is a space between the chamber lid portion 122 and the chamber main body 121, and the outer peripheral edge portion of the substrate 9 (that is, the portion near the outer peripheral edge including the outer peripheral edge) is in a horizontal state. Support from below. That is, the substrate 9 is supported by the substrate support portion 141 in a state where the upper surface 91 faces the upper side perpendicular to the central axis J1. The above-described lower surface facing portion 211 is disposed inside the substrate support portion 141 in the radial direction.

  The substrate support portion 141 includes a support portion base 413, a plurality of first contact portions 411, and a plurality of first engagement portions 241. The support part base 413 is a substantially annular plate-like member centered on the central axis J1. The plurality of first contact portions 411 are arranged in the circumferential direction around the central axis J1. Each first contact portion 411 is a substantially cylindrical member (that is, a support pin) that protrudes upward from the upper surface of the support portion base 413. The plurality of first contact portions 411 are a plurality of substrate support elements that support the outer edge portion of the substrate 9 from below.

  The plurality of first engaging portions 241 are arranged in the circumferential direction about the central axis J1 on the radially outer side of the outer peripheral edge of the substrate 9. Each first engagement portion 241 is a substantially columnar member (that is, an engagement pin) that protrudes upward from the upper surface of the support portion base 413. The plurality of first engaging portions 241 are used to connect the top plate 123 and the substrate support portion 141 as described later. The plurality of first engaging portions 241 are a plurality of connecting elements that connect the top plate 123 and the substrate support portion 141. The plurality of first engaging portions 241 are arranged at different positions in the circumferential direction from the plurality of first contact portions 411. In the example shown in FIG. 1, six first contact portions 411 and three first engagement portions 241 are provided on the support portion base 413.

  FIG. 3 is a bottom view showing the top plate 123. In FIG. 3, the substrate 9 is also indicated by a two-dot chain line, and a parallel oblique line is given to an outer peripheral opening 236 described later. As shown in FIGS. 1 to 3, the top plate 123 has a substantially annular plate shape perpendicular to the central axis J1. The top plate 123 is accommodated in the chamber space 120 that is a sealed space, and is disposed below the chamber lid portion 122 and above the substrate support portion 141. The top plate 123 has an opening at the center. As shown in FIG. 2, the upper surface 91 of the substrate 9 supported by the substrate support portion 141 faces the lower surface 312 of the top plate 123 perpendicular to the central axis J <b> 1 in the chamber space 120. The top plate 123 is a shielding plate that shields the upper side of the substrate 9. The diameter of the top plate 123 is larger than the diameter of the substrate 9, and the outer peripheral edge of the top plate 123 is located on the outer side in the radial direction over the entire periphery of the outer peripheral edge of the substrate 9.

  FIG. 4 is an enlarged cross-sectional view showing a part of the chamber lid 122 and the top plate 123. In FIG. 4, the cross section in which the 2nd engaging part 242 and the 2nd contact part 421 which are mentioned later are not arrange | positioned is shown. As shown in FIGS. 1, 3, and 4, the top plate 123 includes a plate body portion 234, a plate flange portion 235, a substrate pressing portion 142, a connecting portion 233, and a held portion 237. The plate body 234 is a substantially annular plate-like member that is substantially perpendicular to the central axis J <b> 1, and has the lower surface 312 that covers the upper surface 91 of the substrate 9.

  The plate flange portion 235 is an annular and plate-shaped inclined portion that extends radially outward and downward from the outer peripheral edge of the plate main body portion 234. That is, the plate flange 235 is the outer peripheral portion of the top plate 123. The outer side surface and the inner side surface of the plate flange 235 are inclined surfaces that are directed downward as they are separated from the central axis J1 in the radial direction, and are part of a substantially conical surface that is centered on the central axis J1. The plate body 234 and the plate flange 235 are a single member. The plate body 234 and the plate flange 235 are formed of, for example, a resin having a relatively high chemical resistance. The plate body 234 and the plate flange 235 are formed of, for example, a fluorine resin such as Teflon (registered trademark).

  As shown in FIGS. 3 and 4, the plate collar 235 is provided with a plurality of outer peripheral openings 236. Each outer peripheral opening 236 has a slit shape that extends in the circumferential direction about the central axis J1. The plurality of outer peripheral openings 236 are provided over substantially the entire circumference in the circumferential direction around the central axis J1. The plurality of outer peripheral openings 236 are preferably provided at the upper end of the plate flange 235 (that is, in the vicinity of the boundary between the plate flange 235 and the plate main body 234). In the example shown in FIG. 3, three outer peripheral openings 236 are provided at the upper end of the plate collar 235. In the top plate 123, the plate main body portion 234 and the plate flange portion 235 are continuous between each two outer peripheral opening portions 236 adjacent in the circumferential direction. The continuous part of the plate main body part 234 and the plate flange part 235 is provided, for example, at a position overlapping with a plurality of second engaging parts 242 (described later) in the radial direction.

  As shown in FIG. 2, the substrate pressing portion 142 presses the substrate 9 from the upper side at the outer peripheral edge portion of the substrate 9 (that is, the portion in the vicinity of the outer peripheral edge including the outer peripheral edge). As shown in FIGS. 1 to 3, the substrate pressing portion 142 includes a plurality of second contact portions 421. The plurality of second contact portions 421 are arranged in the circumferential direction around the central axis J1. Each second contact portion 421 is a substantially columnar member (that is, a pressing pin) that protrudes downward from the lower surface 312 of the plate main body portion 234. The plurality of second contact portions 421 are a plurality of substrate pressing elements that press the outer peripheral edge of the substrate 9 from above. In FIG. 1 and FIG. 2, for convenience of illustration, the second contact portion 421 and the first contact portion 411 are drawn on the same cross section. However, actually, the plurality of second contact portions 421 include a plurality of second contact portions 421. The one contact portion 411 is disposed at a different position in the circumferential direction. In the following description, the substrate support portion 141 and the substrate pressing portion 142 are collectively referred to as a “substrate holding portion”.

  As shown in FIG. 2, the connecting portion 233 is connected to the substrate support portion 141 on the outer side in the radial direction than the outer peripheral edge of the substrate 9. As a result, the top plate 123 is connected to the substrate support portion 141. As shown in FIGS. 1 to 3, the connecting portion 233 includes a second engaging portion 242 that is a plurality of connecting elements. The plurality of second engaging portions 242 are arranged in the circumferential direction around the central axis J <b> 1 on the radially outer side than the outer peripheral edge of the substrate 9. Each second engagement portion 242 is a substantially columnar member (that is, an engagement pin) that protrudes downward from the lower surface 312 of the plate main body portion 234. A recess that is recessed upward is provided on the lower end surface of each second engagement portion 242. As shown in FIG. 2, the top plate 123 is connected to the substrate support portion 141 by fitting the upper end portion of the first engagement portion 241 into the concave portion of the second engagement portion 242. The plurality of second engaging portions 242 are arranged at positions different from the plurality of second contact portions 421 in the circumferential direction. In the example illustrated in FIG. 3, twelve second contact portions 421 and three second engagement portions 242 that are fewer than the second contact portions 421 are provided on the top plate 123.

  As shown in FIG. 4, the held portion 237 protrudes upward from the upper surface 311 of the plate body portion 234. In the state shown in FIG. 4, the top plate 123 is supported by the held portion 237 being suspended by the chamber lid portion 122. The chamber lid part 122 has a substantially annular plate holding part 222 at the center. The plate holding part 222 includes a substantially cylindrical tube part 223 centered on the central axis J1 and a substantially annular plate-shaped flange part 224 centered on the central axis J1. The flange portion 224 extends radially inward from the lower end of the cylindrical portion 223.

  The held portion 237 includes a plurality of held elements 237a. The plurality of held elements 237a are arranged at substantially equal angular intervals in the circumferential direction around the central axis J1. Each retained element 237a includes a support column 238 extending upward from the plate body 234, and a flange 239 extending radially outward from the upper end of the support column 238. The column portion 238 is located on the radially inner side of the cylindrical portion 223 of the plate holding portion 222. The flange portion 239 is located above the flange portion 224 of the plate holding portion 222 and faces the flange portion 224 in the up-down direction. When the lower surface of the flange portion 239 of the held portion 237 is in contact with the upper surface of the flange portion 224 of the plate holding portion 222, the top plate 123 is attached to the chamber lid portion 122 so as to be suspended from the chamber lid portion 122.

  FIG. 5 is a bottom view showing the top plate 123 and the chamber lid 122. As shown in FIGS. 4 and 5, the cooling unit 51 is attached to the canopy unit 227 of the chamber cover unit 122 above the plate flange 235 of the top plate 123. The cooling unit 51 is a cooling gas supply unit that supplies a gas (hereinafter referred to as “cooling gas”) that is cooled in the chamber space 120 from the upper side to the lower side of the plate flange 235. The cooling unit 51 includes, for example, a plurality of cooling gas nozzles 52 fixed to the chamber lid 122 along each outer peripheral opening 236. In the example shown in FIGS. 4 and 5, 18 cooling gas nozzles 52 are arranged along the three outer peripheral openings 236 at substantially equal angular intervals over the entire circumference in the circumferential direction. In the substrate processing apparatus 1, the cooling gas is supplied from the cooling unit 51 provided in the circumferential direction along the outer peripheral opening 236 in the vicinity of the outer peripheral opening 236, so that the vicinity of the plate flange 235 of the top plate 123 (that is, the outer peripheral opening) The atmosphere in the vicinity of the opening 236 is cooled.

  The substrate rotation mechanism 15 shown in FIG. 1 is a so-called hollow motor. The substrate rotation mechanism 15 includes an annular stator portion 151 centered on the central axis J1 and an annular rotor portion 152. The rotor portion 152 includes a substantially annular permanent magnet. The surface of the permanent magnet is molded with, for example, PTFE resin. The rotor portion 152 is disposed in the lower annular space 217 in the chamber space 120 of the chamber 12. A support portion base 413 of the substrate support portion 141 is attached to the upper portion of the rotor portion 152 via a connection member. The support portion base 413 is disposed above the rotor portion 152.

  The stator portion 151 is disposed around the rotor portion 152 outside the chamber 12. In other words, the stator portion 151 is disposed outside the chamber space 120 and outside the rotor portion 152 in the radial direction. In the present embodiment, the stator portion 151 is fixed to the bottom outer wall portion 215 and the base portion 216 of the chamber bottom portion 210 and is positioned below the liquid receiving portion 16. Stator portion 151 includes a plurality of coils arranged in the circumferential direction about central axis J1.

  When current is supplied to the stator portion 151, a rotational force about the central axis J1 is generated between the stator portion 151 and the rotor portion 152. Thereby, the rotor part 152 rotates in a horizontal state around the central axis J1. Due to the magnetic force acting between the stator portion 151 and the rotor portion 152, the rotor portion 152 floats in the chamber 12 without contacting the chamber 12 directly or indirectly, and the substrate 9 is centered on the central axis J1. Are rotated together with the substrate support 141 in a floating state. As shown in FIG. 2, in a state where the top plate 123 is connected to the substrate support portion 141, the substrate 9 is rotated about the central axis J <b> 1 together with the substrate support portion 141 and the top plate 123 by the substrate rotation mechanism 15.

  As shown in FIG. 1, the liquid receiving part 16 includes a cup part 161, a cup part moving mechanism 162, a cup facing part 163, and an outer wall part 164. The cup portion 161 has an annular shape centered on the central axis J <b> 1, and is located on the entire outer circumference in the radial direction of the chamber 12. The cup part moving mechanism 162 moves the cup part 161 in the vertical direction. In other words, the cup movement mechanism 162 moves the cup 161 relative to the chamber body 121 in the vertical direction. The cup part moving mechanism 162 is disposed on the radially outer side of the cup part 161. The cup moving mechanism 162 is arranged at a position different from the chamber opening / closing mechanism 131 in the circumferential direction. The cup facing part 163 is located below the cup part 161 and faces the cup part 161 in the vertical direction. The cup facing portion 163 is a part of a member that forms the chamber side wall portion 214. The cup facing portion 163 has an annular liquid receiving recess 165 positioned on the radially outer side of the chamber side wall portion 214. At the bottom of the liquid receiving recess 165, a recovery port 166 that recovers the processing liquid received by the cup portion 161 of the liquid receiving portion 16 is provided. The discharge port 218 described above is provided independently of the recovery port 166.

  The cup part 161 includes a cup side wall part 611 and a cup upper surface part 612. The cup side wall 611 has a substantially cylindrical shape centered on the central axis J1. The cup upper surface portion 612 has a substantially annular plate shape centered on the central axis J1, and extends from the upper end portion of the cup side wall portion 611 radially inward and radially outward. In the state shown in FIG. 1, the lower portion of the cup side wall portion 611 is located in the liquid receiving recess 165 of the cup facing portion 163.

  The outer wall portion 164 has a substantially cylindrical shape centered on the central axis J1, and can be expanded and contracted in the vertical direction. In the example shown in FIG. 1, the outer wall portion 164 is a bellows in which a plurality of circumferential fold lines and a plurality of circumferential valley fold lines are alternately arranged in the vertical direction. In the following description, the outer wall portion 164 is referred to as “bellows 164”. The bellows 164 is located on the radially outer side of the chamber side wall 214 and the cup side wall 611, and is provided around the chamber side wall 214 and the cup side wall 611 over the entire circumference. The bellows 164 is formed of a material that does not allow gas or liquid to pass through.

  The upper end portion of the bellows 164 is connected to the lower surface of the outer edge portion of the cup upper surface portion 612 of the cup portion 161 over the entire circumference. In other words, the upper end portion of the bellows 164 is indirectly connected to the cup side wall portion 611 via the cup upper surface portion 612. The connecting portion between the bellows 164 and the cup upper surface portion 612 is sealed to prevent the passage of gas or liquid. The lower end portion of the bellows 164 is indirectly connected to the chamber body 121 via the cup facing portion 163. Even at the connecting portion between the lower end portion of the bellows 164 and the cup facing portion 163, the passage of gas or liquid is prevented. The bellows 164 is deformed following the movement of the cup part 161 by the cup part moving mechanism 162 (that is, the relative movement of the cup part 161 with respect to the chamber main body 121), and the vertical height is changed.

  A substantially cylindrical upper nozzle 181 centering on the central axis J1 is attached to the center of the chamber lid 122. The upper nozzle 181 is fixed to the chamber lid 122 so as to face the central portion of the upper surface 91 of the substrate 9. The upper nozzle 181 can be inserted into the central opening of the top plate 123. A lower nozzle 182 is attached to the center of the lower surface facing portion 211 of the chamber bottom portion 210. The lower nozzle 182 has a liquid discharge port at the center and faces the center of the lower surface 92 of the substrate 9.

  A plurality of heating nozzles 180 are further attached to the lower surface facing portion 211. The plurality of heating nozzles 180 are, for example, arranged at approximately equal angular intervals in the circumferential direction around the central axis J1. The plurality of heating nozzles 180 are fluid supply units that supply fluid having a temperature higher than that of the substrate 9 toward the substrate 9, and are also heating units that heat the substrate 9. In the example shown in FIG. 1, a heated gas (hereinafter referred to as “heating gas”) is supplied from the heating nozzle 180 toward the substrate 9. In other words, the heating nozzle 180 is a heating gas supply unit that supplies a heating gas for heating the substrate 9. From the heating nozzle 180, for example, a heated liquid or a mixed fluid of heated gas and liquid may be supplied.

  FIG. 6 is a block diagram showing the gas-liquid supply unit 18 and the gas-liquid discharge unit 19. The gas-liquid supply unit 18 includes a chemical solution supply source 183, a pure water supply source 184, and an IPA supply source in addition to the above-described upper nozzle 181, lower nozzle 182, heating nozzle 180, and the plurality of cooling gas nozzles 52 of the cooling unit 51. 185, a first gas supply source 188, and a second gas supply source 187. These supply sources may be provided in the substrate processing apparatus 1 or may be provided outside the substrate processing apparatus 1.

  The chemical solution supply source 183 is connected to the upper nozzle 181 through a valve. The pure water supply source 184 and the IPA supply source 185 are also connected to the upper nozzle 181 through valves. The first gas supply source 188 is also connected to the upper nozzle 181 through a valve. The lower nozzle 182 is connected to a pure water supply source 184 through a valve. The plurality of heating nozzles 180 are connected to the second gas supply source 187 via valves. The plurality of cooling gas nozzles 52 are also connected to the second gas supply source 187 via valves.

  A first discharge path 191 is connected to the recovery port 166 provided in the liquid receiving recess 165 of the liquid receiving part 16, and the first discharge path 191 is connected to the gas-liquid separation part 193. The gas-liquid separation unit 193 is connected to the outer exhaust unit 194, the chemical solution recovery unit 195, and the drainage unit 196 through valves. A second discharge path 192 is connected to the discharge port 218 provided in the chamber body 121, and the second discharge path 192 is connected to the gas-liquid separation unit 197. The gas-liquid separation unit 197 is connected to the inner exhaust unit 198 and the drainage unit 199 via valves. Each configuration of the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 is controlled by the control unit 10. The chamber opening / closing mechanism 131, the substrate rotating mechanism 15, and the cup moving mechanism 162 (see FIG. 1) are also controlled by the control unit 10.

  The chemical liquid supplied from the chemical liquid supply source 183 to the upper nozzle 181 is discharged from the discharge port at the tip of the upper nozzle 181 toward the center of the upper surface 91 of the substrate 9. The chemical solution supplied to the substrate 9 from the chemical solution supply source 183 via the upper nozzle 181 is, for example, a processing solution for processing the substrate using a chemical reaction, and is a polymer removal solution, hydrofluoric acid, tetramethyl hydroxide, or the like. An etching solution such as an aqueous ammonium solution.

  The pure water supply source 184 supplies deionized water (DIW) to the substrate 9 via the upper nozzle 181 and the lower nozzle 182. The pure water supplied from the pure water supply source 184 to the upper nozzle 181 is discharged from the discharge port at the tip of the upper nozzle 181 toward the center of the upper surface 91 of the substrate 9. The pure water supplied from the pure water supply source 184 to the lower nozzle 182 is discharged from the discharge port at the tip of the lower nozzle 182 toward the center of the lower surface 92 of the substrate 9. Isopropyl alcohol (IPA) supplied from the IPA supply source 185 to the upper nozzle 181 is discharged from the discharge port at the tip of the upper nozzle 181 toward the center of the upper surface 91 of the substrate 9.

  When the above-described chemical solution, pure water, and IPA are collectively referred to as a processing solution, the chemical solution supply source 813, the pure water supply source 814, the IPA supply source 815, and the upper nozzle 181 supply the processing solution to the upper surface 91 of the substrate 9. It is included in the liquid supply unit. In the substrate processing apparatus 1, another supply source that supplies a processing solution other than the chemical solution, pure water, and IPA may be included in the processing solution supply unit.

The first gas supply source 188 supplies gas to the upper surface 91 of the substrate 9 through the upper nozzle 181. In the example illustrated in FIG. 6, for example, an inert gas such as nitrogen (N ₂ ) gas is supplied from the jet outlet at the tip of the upper nozzle 181. The said jet nozzle is arrange | positioned around the discharge outlet of the above-mentioned upper nozzle 181, for example.

The second gas supply source 187 is a vortex tube type gas supply source. In the second gas supply source 187, the compressed gas supplied into the vortex tube rotates at a high speed, so that the compressed gas is separated into a relatively low temperature cooling gas and a relatively high temperature heating gas. In the second gas supply source 187, for example, a cooling gas of about −10 ° C. (about −10 degrees Celsius) and a heating gas of about 128 ° C. (about 128 degrees Celsius) are generated. The cooling gas generated by the second gas supply source 187 is supplied to the plurality of cooling gas nozzles 52 of the cooling unit 51, and from the plurality of cooling gas nozzles 52, the plate flange 235 and the plurality of outer peripheral openings 236 (FIG. 3). And (see FIG. 4). The heated gas generated by the second gas supply source 187 is supplied to the plurality of heating nozzles 180 serving as a heating unit, and is ejected from the plurality of heating nozzles 180 toward the lower surface 92 of the substrate 9. In the example illustrated in FIG. 6, for example, an inert gas such as nitrogen (N ₂ ) gas is supplied from the cooling gas nozzle 52 and the heating nozzle 180. In addition, when supplying the inert gas heated from the heating nozzle 180, the explosion-proof measures in the substrate processing apparatus 1 can be simplified or unnecessary.

  FIG. 7 is a diagram illustrating a processing flow of the substrate 9 in the substrate processing apparatus 1. In the substrate processing apparatus 1, as shown in FIG. 1, in a state where the chamber lid part 122 is spaced apart from the chamber body 121 and located above, and the cup part 161 is separated from the chamber lid part 122 and located below. The substrate 9 is carried into the chamber 12 by an external transport mechanism and supported from below by the substrate support portion 141 (step S11). Hereinafter, the state of the chamber 12 and the cup part 161 shown in FIG. 1 is referred to as an “open state”. The opening between the chamber lid part 122 and the chamber side wall part 214 has an annular shape centering on the central axis J1, and is hereinafter referred to as “annular opening 81”. In the substrate processing apparatus 1, the chamber lid 122 is separated from the chamber main body 121, whereby an annular opening 81 is formed around the substrate 9 (that is, radially outside). In step S <b> 11, the substrate 9 is carried in via the annular opening 81.

  When the substrate 9 is carried in, the cup portion 161 rises from the position shown in FIG. 1 to the position shown in FIG. 8, and is located over the entire circumference on the radially outer side of the annular opening 81. In the following description, the state of the chamber 12 and the cup part 161 shown in FIG. 8 is referred to as a “first sealed state”. Further, the position of the cup portion 161 shown in FIG. 8 is referred to as “liquid receiving position”, and the position of the cup portion 161 shown in FIG. 1 is referred to as “retracted position”. The cup part moving mechanism 162 moves the cup part 161 in the vertical direction between a liquid receiving position radially outside the annular opening 81 and a retracted position below the liquid receiving position. As shown in FIG. 8, at the liquid receiving position, the cup portion 161 of the liquid receiving portion 16 is arranged around the substrate 9 and the substrate support portion 141 over the entire circumference.

  In the cup portion 161 located at the liquid receiving position, the cup side wall portion 611 faces the annular opening 81 in the radial direction. Further, the upper surface of the inner edge portion of the cup upper surface portion 612 is in contact with the lip seal 252 at the lower end of the outer edge portion of the chamber lid portion 122 over the entire circumference. Between the chamber lid part 122 and the cup upper surface part 612 of the cup part 161, a seal part for preventing the passage of gas or liquid is formed. Thereby, a sealed space (hereinafter referred to as “enlarged sealed space 100”) surrounded by the chamber main body 121, the chamber lid portion 122, and the liquid receiving portion 16 (specifically, the cup portion 161, the bellows 164, and the cup facing portion 163). Is formed). In the enlarged sealed space 100, the chamber space 120 between the chamber lid portion 122 and the chamber body 121 and the side space 160 between the cup portion 161 and the cup facing portion 163 communicate with each other via the annular opening 81. It is one space formed by this.

  In the first sealed state, the plurality of second contact portions 421 of the substrate pressing portion 142 are in contact with the outer edge portion of the substrate 9. On the lower surface 312 of the top plate 123 and the support portion base 413 of the substrate support portion 141, a plurality of pairs of magnets (not shown) that are opposed in the vertical direction are provided. Hereinafter, each pair of magnets is also referred to as a “magnet pair”. In the substrate processing apparatus 1, a plurality of magnet pairs are arranged at equiangular intervals at positions different from the first contact portion 411, the second contact portion 421, the first engagement portion 241, and the second engagement portion 242 in the circumferential direction. Arranged. In a state where the substrate pressing portion 142 is in contact with the substrate 9, a downward force is applied to the top plate 123 due to the magnetic force (attractive force) acting between the magnet pair. Thereby, the substrate pressing portion 142 presses the substrate 9 to the substrate support portion 141.

  In the substrate processing apparatus 1, the substrate pressing portion 142 presses the substrate 9 against the substrate support portion 141 by the weight of the top plate 123 and the magnetic force of the magnet pair, thereby causing the substrate pressing portion 142 and the substrate support portion to be pressed. 141 and can be firmly held by being sandwiched from above and below. As long as the substrate 9 can be firmly held, the magnet pair may be omitted.

  In the first sealed state, the flange portion 239 of the held portion 237 is separated above the flange portion 224 of the plate holding portion 222, and the plate holding portion 222 and the held portion 237 are not in contact with each other. In other words, the holding of the top plate 123 by the plate holding part 222 is released. For this reason, the top plate 123 is separated from the chamber lid part 122 by the substrate rotating mechanism 15 together with the substrate 9 and the substrate holding part held by the substrate holding part (that is, the substrate support part 141 and the substrate pressing part 142). Rotate.

  Further, in the first sealed state, the upper end portion of the first engagement portion 241 is fitted into the concave portion at the lower end portion of the second engagement portion 242. Thereby, the top plate 123 engages with the support portion base 413 of the substrate support portion 141 in the circumferential direction around the central axis J1. In other words, the first engagement portion 241 and the second engagement portion 242 restrict the relative position in the rotation direction of the top plate 123 with respect to the substrate support portion 141 (that is, fix the relative position in the circumferential direction). It is a member. When the chamber lid part 122 is lowered, the rotation position of the support part base 413 is controlled by the substrate rotation mechanism 15 so that the first engagement part 241 and the second engagement part 242 are fitted.

  FIG. 9 is an enlarged view showing a part of the substrate processing apparatus 1 of FIG. As shown in FIG. 9, the plate body portion 234 of the top plate 123 covers the upper surface 91 of the substrate 9 supported by the substrate support portion 141, and the plate flange portion 235 is located near the outer peripheral edge of the substrate 9. Located above the upper surface 91. Therefore, the plurality of outer peripheral openings 236 provided in the plate flange 235 are also located above the upper surface 91 of the substrate 9.

  Subsequently, the substrate rotation mechanism 15 starts rotating the substrate 9 at a constant rotation speed (which is a relatively low rotation speed, hereinafter referred to as “steady rotation speed”). Next, heated gas is ejected from the plurality of heating nozzles 180 toward the lower surface 92 of the rotating substrate 9. Thereby, the substrate 9 is heated. Further, cooling gas is ejected from the plurality of cooling gas nozzles 52 of the cooling unit 51. As a result, the atmosphere is cooled in the vicinity of the plate flange 235 of the top plate 123. Furthermore, the outer exhaust part 194 and the inner exhaust part 198 (see FIG. 6) start the exhaust of the gas in the enlarged sealed space 100 via the recovery port 166 and the exhaust port 218.

  And supply of a chemical | medical solution is started from the upper nozzle 181 toward the center part of the upper surface 91 of the board | substrate 9 to rotate (step S12). The discharge of the chemical liquid onto the upper surface 91 of the substrate 9 is performed only on the central portion of the substrate 9 and is not performed on portions other than the central portion. The chemical solution from the upper nozzle 181 is continuously supplied, for example, to the upper surface 91 of the rotating substrate 9. The chemical solution on the upper surface 91 spreads to the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and the entire upper surface 91 is covered with the chemical solution.

  During the supply of the chemical solution from the upper nozzle 181, the ejection of the heated gas from the heating nozzle 180 is continued. Thereby, a chemical treatment (for example, a polymer removal treatment or an etching treatment) is performed on the upper surface 91 with a chemical solution while the substrate 9 is heated to approximately a desired temperature. As a result, the uniformity of the chemical treatment for the substrate 9 can be improved. Since the lower surface 312 of the top plate 123 is close to the upper surface 91 of the substrate 9, the chemical treatment for the substrate 9 is performed in an extremely narrow space between the lower surface 312 of the top plate 123 and the upper surface 91 of the substrate 9. An inert gas is supplied to the space from the upper nozzle 181. For this reason, the chemical | medical solution process with respect to the board | substrate 9 can be performed in a low oxygen atmosphere.

  In the enlarged sealed space 100, as shown in FIG. 10, the chemical solution 93 that scatters radially outward from the upper surface 91 of the rotating substrate 9 flows into the liquid receiving portion 16 through the annular opening 81. Although not shown in FIG. 10, a part of the chemical solution 93 that splashes radially outward from the substrate 9 and flows into the liquid receiving portion 16 is received by the inner peripheral surface of the cup portion 161. The chemical solution 93 received by the liquid receiving portion 16 is guided to the liquid receiving recess 165. The chemical liquid 93 guided to the liquid receiving recess 165 is recovered by the recovery port 166 and flows into the gas-liquid separator 193 (see FIG. 6). The chemical solution 93 that has flowed into the gas-liquid separation unit 193 is collected by the chemical solution collection unit 195 and is reused after impurities and the like are removed through a filter and the like.

  As described above, since the substrate 9 is heated by the heating gas supplied from the heating nozzle 180, the chemical solution 93 on the upper surface 91 of the substrate 9 is also heated, and a part of the chemical solution 93 is vaporized. The gaseous chemical solution moves outward in the radial direction together with the inert gas supplied from the upper nozzle 181 in the space between the substrate 9 and the top plate 123. And it spreads from the outer periphery (namely, outer periphery of the top plate 123) of the some outer periphery opening part 236 and the plate collar part 235 to the circumference | surroundings of the top plate 123. FIG. Note that the liquid chemical does not reach the outer peripheral opening 236 and passes below the outer peripheral opening 236. The gaseous chemical solution that has spread around the top plate 123 is cooled by the cooling gas supplied from the plurality of cooling gas nozzles 52 of the cooling unit 51, thereby condensing into a liquid (that is, liquefied). The liquid chemical solution flows into the liquid receiving portion 16 together with the liquid chemical solution 93 that scatters radially outward from the substrate 9 and is recovered by the recovery port 166.

  Further, in the space between the substrate 9 and the top plate 123, a part of the chemical solution becomes mist and floats in the atmosphere. The mist-like chemical solution also moves outward in the radial direction together with the inert gas supplied from the upper nozzle 181. And it spreads from the outer periphery of the some outer periphery opening part 236 and the plate collar part 235 to the circumference | surroundings of the top plate 123. FIG. The mist-like chemical liquid spreading around the top plate 123 moves downward by the cooling gas supplied from the upper side to the lower side by the plurality of cooling gas nozzles 52. The mist-like chemical liquid also flows into the liquid receiving portion 16 together with the liquid chemical liquid 93 that scatters radially outward from the substrate 9 and is collected by the collection port 166.

  When a predetermined time (for example, 60 to 120 seconds) elapses from the start of the supply of the chemical solution from the upper nozzle 181, the supply of the chemical solution from the upper nozzle 181, the supply of the cooling gas from the cooling gas nozzle 190, and the heating from the heating nozzle 180 Gas supply is stopped. Then, the substrate rotation mechanism 15 makes the rotation speed of the substrate 9 higher than the steady rotation speed for a predetermined time (for example, 1 to 3 seconds), and the chemical solution is removed from the substrate 9.

  Subsequently, the chamber lid portion 122 and the cup portion 161 move downward in synchronization. Then, as shown in FIG. 2, the lip seal 251 at the lower end of the outer edge portion of the chamber lid portion 122 is in contact with the upper portion of the chamber side wall portion 214, whereby the annular opening 81 is closed, and the chamber space 120 becomes the side space 160. And sealed in an isolated state. The cup part 161 is located at the retracted position as in FIG. Hereinafter, the state of the chamber 12 and the cup part 161 shown in FIG. 2 is referred to as a “second sealed state”. In the second sealed state, the substrate 9 directly faces the inner wall of the chamber 12, and there is no other liquid receiving part therebetween.

  Even in the second sealed state, similarly to the first sealed state, the substrate pressing portion 142 presses the substrate 9 against the substrate supporting portion 141, so that the substrate 9 is moved from above and below by the substrate pressing portion 142 and the substrate supporting portion 141. It is sandwiched and held firmly. Further, the holding of the top plate 123 by the plate holding unit 222 is released, and the top plate 123 is connected to the substrate support unit 141 independently of the chamber lid unit 122 and rotates together with the substrate support unit 141 and the substrate 9.

  When the chamber space 120 is sealed, the gas exhaust by the outer exhaust part 194 (see FIG. 6) is stopped, and the gas exhaust in the chamber space 120 by the inner exhaust part 198 through the exhaust port 218 is maintained. Then, the supply of pure water from the pure water supply source 184 to the substrate 9 is started (step S13).

  Pure water from the pure water supply source 184 is continuously supplied from the upper nozzle 181 to the central portion of the upper surface 91 of the substrate 9. The pure water from the pure water supply source 184 is also continuously supplied from the lower nozzle 182 to the central portion of the lower surface 92 of the substrate 9. Pure water discharged from the upper nozzle 181 and the lower nozzle 182 is supplied to the substrate 9 as a cleaning liquid.

  The pure water spreads to the outer peripheral portions of the upper surface 91 and the lower surface 92 by the rotation of the substrate 9 and scatters outward from the outer periphery of the substrate 9 in the radial direction. Pure water splashing from the substrate 9 is received by the inner wall of the chamber 12 (that is, the inner walls of the chamber lid part 122 and the chamber side wall part 214), and is discharged to the discharge port 218, the second discharge path 192, the gas-liquid separation part 197, It is discarded via the liquid part 199 (see FIG. 6) (the same applies to the drying process of the substrate 9 described later). Thereby, in the chamber space 120, the cleaning of the chamber 12 is substantially performed together with the cleaning process for the substrate 9 with pure water.

  When a predetermined time has elapsed from the start of the supply of pure water, the supply of pure water from the pure water supply source 184 is stopped. Then, the heating gas is ejected from the plurality of heating nozzles 180 toward the lower surface 92 of the substrate 9. Thereby, the substrate 9 is heated.

  Subsequently, IPA is supplied from the upper nozzle 181 onto the upper surface 91 of the substrate 9, and pure water is replaced with IPA on the upper surface 91 (step S14). When a predetermined time has elapsed from the start of IPA supply, the supply of IPA from the IPA supply source 185 is stopped. Thereafter, the rotation speed of the substrate 9 is made sufficiently higher than the steady rotation speed in a state where the ejection of the heating gas from the heating nozzle 180 is continued. As a result, the IPA is removed from the substrate 9, and the substrate 9 is dried (step S15). When a predetermined time has elapsed from the start of drying of the substrate 9, the rotation of the substrate 9 is stopped. The drying process of the substrate 9 may be performed in a reduced-pressure atmosphere lower than the atmospheric pressure by reducing the chamber space 120 by the inner exhaust unit 198.

  Thereafter, the chamber lid 122 and the top plate 123 are raised, and the chamber 12 is opened as shown in FIG. In step S <b> 15, the top plate 123 rotates together with the substrate support portion 141, so that almost no liquid remains on the lower surface 312 of the top plate 123. For this reason, the liquid does not fall from the top plate 123 onto the substrate 9 when the chamber lid 122 is raised. The substrate 9 is unloaded from the chamber 12 by an external transfer mechanism (step S16).

  As described above, in the substrate processing apparatus 1, the substrate support portion 141 and the top plate 123 that is a shielding plate are accommodated in the chamber 12, and the substrate 9 is rotated together with the substrate support portion 141 by the substrate rotation mechanism 15. A liquid receiving part 16 is disposed around the substrate support part 141 and receives the processing liquid scattered radially outward from the rotating substrate 9. The processing liquid received by the liquid receiving unit 16 is recovered by the recovery port 166. The substrate processing apparatus 1 also cools the atmosphere in the vicinity of the outer peripheral portion of the top plate 123, the discharge port 218 provided independently of the recovery port 166, the plurality of heating nozzles 180 that are heating units for heating the substrate 9, and the top plate 123. The cooling part 51 to be provided.

  In the substrate processing apparatus 1, the gaseous processing liquid spreading from the space between the substrate 9 and the top plate 123 to the surroundings is cooled and liquefied by the cooling unit 51 and recovered by the recovery port 166. As a result, it is possible to prevent the gaseous processing liquid from being discharged from the discharge port 218 and to reduce the recovery rate, and to improve the processing liquid recovery rate. Further, it is possible to prevent the gaseous processing liquid from flowing around to the back side of the top plate 123 (that is, above the top plate 123) and adhering to the upper surface 311 of the top plate 123 or the chamber lid 122. .

  As described above, the cooling unit 51 is a cooling gas supply unit that supplies a cooling gas from above to below from the outer periphery of the top plate 123. For this reason, a cooling atmosphere can be easily generated around the top plate 123, and the gaseous treatment liquid can be efficiently condensed. Further, since the gaseous processing liquid can be guided downward together with the cooling gas, it is possible to further suppress the gaseous processing liquid from flowing around the top plate 123. Further, when the mist-like processing liquid spreads from the space between the substrate 9 and the top plate 123 to the periphery, the mist-like processing liquid can be guided downward together with the cooling gas and recovered by the recovery port 166. As a result, the recovery rate of the processing liquid can be further improved, and the mist-like processing liquid can be prevented from flowing around the top plate 123.

  In the substrate processing apparatus 1, an outer peripheral opening 236 that extends in the circumferential direction is provided in the outer peripheral portion of the top plate 123, and the cooling unit 51 is provided in the circumferential direction along the outer peripheral opening 236 in the vicinity of the outer peripheral opening 236. Thereby, the gaseous processing liquid can be separated from the liquid processing liquid and taken out from the space between the substrate 9 and the top plate 123. As a result, the gaseous processing liquid can be efficiently cooled, and the recovery rate of the processing liquid can be further improved.

  In the substrate processing apparatus 1, a plurality of heating nozzles 180 that are fluid supply units that supply a fluid having a temperature higher than that of the substrate 9 to the substrate 9 are provided as heating units that heat the substrate 9. Thereby, the board | substrate 9 can be heated easily and efficiently. In addition, as described above, the plurality of heating nozzles 180 and the plurality of cooling gas nozzles 52 of the cooling unit 51 are connected to the vortex tube type second gas supply source 187 that generates the heating gas and the cooling gas. Thereby, the structure concerning supply of heating gas and cooling gas can be simplified.

  Various changes can be made in the substrate processing apparatus 1.

  For example, the plurality of heating nozzles 180 and the plurality of cooling gas nozzles 52 are not necessarily connected to the vortex tube type second gas supply source 187, and may be connected to other types of gas supply units. For example, the plurality of heating nozzles 180 may be connected to a heating gas supply source, and the plurality of cooling gas nozzles 52 may be connected to a cooling gas supply source provided independently of the heating gas supply source.

  In the cooling unit 51, instead of the plurality of cooling gas nozzles 52 arranged in the circumferential direction, a slit-like cooling gas supply port extending in the circumferential direction above the plate flange 235 may be provided. The cooling unit 51 is not necessarily a cooling gas supply unit that supplies a cooling gas. For example, a cooling pipe through which a refrigerant flows or a cooling plate using a Peltier element or the like may be provided as the cooling unit 51 on the inner surface of the chamber lid 122.

  In the top plate 123, the plate flange portion 235 may be omitted, and the above-described outer peripheral opening 236 may be provided on the outer peripheral portion of the substantially annular plate-shaped plate main body portion 234. In the top plate 123, the outer peripheral opening 236 is not necessarily provided. When the outer peripheral opening 236 is not provided, the gaseous processing liquid spreading from the outer peripheral edge of the top plate 123 to the periphery of the top plate 123 is cooled by the cooling unit 51 and liquefied. Thereby, as described above, the recovery rate of the processing liquid by the recovery port 166 can be improved.

  In the substrate processing apparatus 1, various configurations other than the plurality of heating nozzles 180 may be provided as a heating unit that heats the substrate 9. For example, a mechanism for irradiating the substrate 9 with light to heat the substrate 9 may be provided as the heating unit.

  The chamber opening / closing mechanism 131 does not necessarily need to move the chamber lid 122 in the vertical direction, and may move the chamber body 121 in the vertical direction with the chamber lid 122 fixed. The chamber 12 is not necessarily limited to a substantially cylindrical shape, and may have various shapes.

  The shapes and structures of the stator portion 151 and the rotor portion 152 of the substrate rotation mechanism 15 may be variously changed. The rotor unit 152 does not necessarily need to rotate in a floating state, and a structure such as a guide for mechanically supporting the rotor unit 152 is provided in the chamber 12, and the rotor unit 152 rotates along the guide. Good. The substrate rotation mechanism 15 is not necessarily a hollow motor, and an axial rotation type motor may be used as the substrate rotation mechanism.

  In the substrate processing apparatus 1, various processes other than the polymer removal process and the etching process described above, for example, removal of an oxide film on the substrate, development with a developer, and the like are performed by the chemical liquid supplied from the chemical liquid supply source 183. Good.

  The substrate processing apparatus 1 may be used for processing a glass substrate used in a display device such as a liquid crystal display device, a plasma display, and an FED (field emission display) in addition to a semiconductor substrate. Alternatively, the substrate processing apparatus 1 may be used for processing of an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, and the like.

  The configurations in the above-described embodiments and modifications may be combined as appropriate as long as they do not contradict each other.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 9 Substrate 12 Chamber 15 Substrate rotation mechanism 16 Liquid receiving part 51 Cooling part 91 Upper surface 93 Chemical solution 123 Top plate 141 Substrate support part 166 Recovery port 180 Heating nozzle 187 Second gas supply source 218 Discharge port 236 Outer peripheral opening J1 Center axis S11-S16 step

Claims (5)

A substrate processing apparatus for processing a substrate,
A substrate support for supporting the substrate in a horizontal state;
A shielding plate disposed to face the upper surface of the substrate;
A chamber for accommodating the substrate support part and the shielding plate inside;
A substrate rotation mechanism that rotates the substrate together with the substrate support portion around a central axis that faces the vertical direction;
A liquid receiving portion that is disposed around the substrate support portion and receives a processing liquid scattered radially outward from the rotating substrate;
A recovery port for recovering the processing liquid received at the liquid receiver;
An exhaust port that is provided independently of the recovery port and exhausts the gas in the chamber;
A heating unit for heating the substrate;
A cooling part for cooling the atmosphere in the vicinity of the outer peripheral part of the shielding plate;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the heating unit is a fluid supply unit that supplies a fluid having a temperature higher than that of the substrate to the substrate. The substrate processing apparatus according to claim 1, wherein:
The outer peripheral portion of the shielding plate is provided with an outer peripheral opening located above the upper surface of the substrate and extending in the circumferential direction,
The substrate processing apparatus, wherein the cooling unit is provided in the circumferential direction along the outer peripheral opening in the vicinity of the outer peripheral opening. A substrate processing apparatus according to any one of claims 1 to 3,
The substrate processing apparatus, wherein the cooling unit is a cooling gas supply unit that supplies a cooling gas from above to below from the outer peripheral part of the shielding plate. The substrate processing apparatus according to claim 4,
The heating unit is a heating gas supply unit for supplying a heating gas for heating the substrate;
The substrate processing apparatus, wherein the heating gas supply unit and the cooling gas supply unit are connected to a vortex tube type gas supply source that generates the heating gas and the cooling gas.

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