JP2015023073A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To satisfy both of the improvement of electrical properties and the improvement of workability of a protective film in a GaN-based semiconductor device.SOLUTION: A semiconductor device comprises: a p-type semiconductor layer mainly consisting of gallium nitride (GaN); an n-type semiconductor layer mainly consisting of gallium nitride (GaN) and bonded to the p-type semiconductor layer; a protective film having electrical insulation properties and covering the p-type semiconductor layer and the n-type semiconductor layer; and an electrode having conductivity and bonded to at least one of the p-type semiconductor layer and the n-type semiconductor layer by ohmic junction. The protective film comprises: a first layer consisting of aluminium oxide (AlO), adjacent to the p-type semiconductor layer and the n-type semiconductor layer and covering an edge of a pn junction surface where the p-type semiconductor layer and the n-type semiconductor layer are bonded to each other; a second layer consisting of an insulation material different from aluminium oxide (AlO) and stacked on the first layer; and an opening passing through the first layer and the second layer, and the electrode is arranged inside of the opening.

Description

  The present invention relates to a semiconductor device.

  As semiconductor devices (semiconductor devices, semiconductor elements), GaN-based semiconductor devices including one or more semiconductor layers mainly made of gallium nitride (GaN) are known. Some GaN-based semiconductor devices function as pn junction diodes, transistors, thyristors, and the like. A GaN-based semiconductor device has a protective film covering the semiconductor layer for the purpose of reducing leakage current at the interface of the semiconductor layer, alleviating electric field concentration in the semiconductor layer, and protecting the junction surface between the two semiconductor layers. Is formed. The protective film is made of an electrically insulating material. In the etching process for the protective film, wet etching is preferable to dry etching from the viewpoint of preventing damage to the semiconductor layer.

Patent Document 1 describes a protective film made of one type of electrically insulating material selected from silicon dioxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), and the like. Patent Document 2 describes that a protective film made of silicon nitride (SiN) is divided into two layers in order to form an opening that is below the processing limit by photolithography. Patent Document 3 discloses that a gate insulating film made of aluminum oxide (Al ₂ O ₃ ) is made of silicon dioxide (SiO ₂ ), silicon oxynitride (SiON) or the like in order to suppress erosion of the gate insulating film during manufacturing. The formation of a protective film is described.

JP 2008-198787 A JP 2011-77123 A JP 2010-166040 A

According to an experiment by the inventors, in a GaN-based semiconductor device, Al ₂ O ₃ was effective as an electrical insulating material for the protective film from the viewpoint of reducing leakage current. However, when the protective film made of Al ₂ O ₃ is thickened to ensure sufficient dielectric breakdown strength, there is a problem in that etching failure (resist mask peeling or missing) occurs during processing by wet etching. It was.

  Therefore, in a GaN-based semiconductor device, there has been a demand for a technique that can simultaneously improve the electrical characteristics of the protective film and the workability. In addition, for semiconductor devices, there have been demands for cost reduction, miniaturization, ease of manufacture, resource saving, improved usability, and improved durability.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms.

(1) According to one aspect of the present invention, a semiconductor device is provided. This semiconductor device has a p-type semiconductor layer mainly made of gallium nitride (GaN); an n-type semiconductor layer mainly made of gallium nitride (GaN) and bonded to the p-type semiconductor layer; And a protective film that covers the p-type semiconductor layer and the n-type semiconductor layer; and an electrode that has conductivity and is in ohmic contact with at least one of the p-type semiconductor layer and the n-type semiconductor layer. The protective film is made of aluminum oxide (Al ₂ O ₃ ), is adjacent to the p-type semiconductor layer and the n-type semiconductor layer, and a pn junction surface where the p-type semiconductor layer and the n-type semiconductor layer are joined. A first layer covering the end of the first layer; a _second layer made of an electrically insulating material different from aluminum oxide (Al ₂ O ₃ ) and laminated on the first layer; the first layer and An opening penetrating the second layer, and the electrode is located inside the opening. According to this embodiment, the first layer can reduce the leakage current at the interface of each semiconductor layer, and the second layer can suppress the thickness of the first layer by reinforcing the dielectric breakdown strength. . As a result, it is possible to improve both the electrical characteristics of the protective film and the workability.

(2) In the semiconductor device described above, the electrically insulating material forming the second layer is silicon dioxide (SiO ₂ ), silicon nitride (SiN), silicon oxynitride (SiON), and hafnium oxide (HfO _2). ), Aluminum nitride (AlN), zirconium oxide (ZrO ₂ ), and zirconium oxynitride (ZrON). According to this embodiment, when the electrically insulating material is silicon dioxide (SiO ₂ ), the dielectric breakdown strength of the protective film can be effectively improved. Further, when the electrical insulating material is at least one of silicon dioxide (SiO ₂ ), silicon nitride (SiN), and silicon oxynitride (SiON), wet etching and dry etching are performed as an etching process on the second layer. Therefore, the degree of freedom in selecting a processing method of the protective film can be improved, and the workability of the protective film can be further improved by selecting dry etching. Further, when the electrically insulating material is at least one of hafnium oxide (HfO ₂ ), aluminum nitride (AlN), zirconium oxide (ZrO ₂ ), and zirconium oxynitride (ZrON), electric field concentration is reduced. The function of the protective film can be effectively improved.

(3) In the semiconductor device described above, the thickness of the first layer may be 500 nm or less. According to this embodiment, it is possible to effectively prevent etching failure due to wet etching on the first layer.

(4) In the semiconductor layer described above, the total thickness of the protective film including the first layer and the second layer may be 400 nm or more. According to this embodiment, the electrical characteristics of the protective film can be sufficiently ensured.

(5) In the above-described semiconductor device, a surface defining the opening in the first layer may be inclined from the semiconductor layer side to the outside of the opening from the second layer side. According to this embodiment, when the first layer has such a surface, the opening has a structure in which the first layer is removed from the semiconductor layer using wet etching, and thus the first layer is formed by dry etching. As compared with the structure from which the semiconductor layer is removed, damage to the semiconductor layer can be suppressed.

According to one embodiment of the present invention, a method for manufacturing a semiconductor device is provided. The manufacturing method includes forming a p-type semiconductor layer mainly made of gallium nitride (GaN); and forming an n-type semiconductor layer mainly made of gallium nitride (GaN) and bonded to the p-type semiconductor layer. And a step of forming a protective film having electrical insulation and covering the p-type semiconductor layer and the n-type semiconductor layer; and having conductivity, the p-type semiconductor layer and the n-type semiconductor. Forming an electrode that is ohmic-bonded to at least one of the layers, wherein the step of forming the protective film layer comprises forming a first layer made of aluminum oxide (Al ₂ O ₃ ) as the p-type semiconductor layer. And forming on the surface of the n-type semiconductor layer including the end of the pn junction surface where the p-type semiconductor layer and the n-type semiconductor layer are joined; and aluminum oxide (Al ₂ O ₃ Electrical insulation material different from A step of laminating a second layer comprising the first layer; an opening that penetrates the first layer and the second layer, and the electrode is located inside the opening. Forming the opening by wet etching. According to this embodiment, it is possible to achieve both improvement in the electrical characteristics of the protective film and improvement in workability.

  The present invention can be realized in various forms other than the semiconductor device and the manufacturing method thereof. For example, it is realizable with forms, such as an electric equipment provided with the above-mentioned semiconductor device, and a manufacturing apparatus which manufactures the above-mentioned semiconductor device.

  According to the present invention, the first layer can reduce the leakage current at the interface of each semiconductor layer, and can suppress the film thickness of the first layer by reinforcing the dielectric breakdown strength with the second layer. it can. As a result, it is possible to improve both the electrical characteristics of the protective film and the workability.

It is sectional drawing which shows typically the structure of the semiconductor device in 1st Embodiment. It is process drawing which shows the manufacturing method of a semiconductor device. It is a graph which shows the evaluation result of a protective film. It is sectional drawing which shows typically the structure of the semiconductor device in 2nd Embodiment. It is process drawing which shows the manufacturing method of a semiconductor device. It is sectional drawing which shows typically the structure of the semiconductor device in 3rd Embodiment. It is sectional drawing which shows typically the structure of the semiconductor device in the modification of 3rd Embodiment. It is sectional drawing which shows typically the structure of the semiconductor device in 4th Embodiment. It is sectional drawing which shows typically the structure of the semiconductor device in 5th Embodiment. It is explanatory drawing which shows the detailed structure of an opening part. It is explanatory drawing which shows the detailed structure of the opening part in other embodiment.

A. First embodiment A-1. Configuration of Semiconductor Device FIG. 1 is a cross-sectional view schematically showing the configuration of a semiconductor device 10 in the first embodiment. FIG. 1 shows XYZ axes orthogonal to each other.

  Of the XYZ axes in FIG. 1, the X axis is an axis from the left to the right in FIG. 1, the + X axis direction is a direction to the right, and the −X axis direction is a direction to the left. It is. Of the XYZ axes in FIG. 1, the Y axis is an axis from the front of the paper to the back of the paper in FIG. 1, the + Y axis is a direction toward the back of the paper, and the −Y axis is a direction toward the front of the paper. It is. Among the XYZ axes in FIG. 1, the Z axis is an axis that goes from the bottom of FIG. 1 to the top of the paper, the + Z axis direction is a direction that goes on the paper, and the −Z axis direction is a direction that goes down the paper. It is.

  The semiconductor device 10 is a GaN-based semiconductor device formed using gallium nitride (GaN). In the present embodiment, the semiconductor device 10 is a vertical pn junction diode. The semiconductor device 10 includes a substrate 110, a semiconductor layer 120, a semiconductor layer 130, a protective film 180, an ohmic electrode 192, a field plate electrode 193, and a back electrode 198.

  The substrate 110 of the semiconductor device 10 is a semiconductor layer having a plate shape extending along the X axis and the Y axis. In this embodiment, the substrate 110 is an n-type semiconductor layer mainly made of gallium nitride (GaN) and containing silicon (Si) as a donor.

  The semiconductor layer 120 of the semiconductor device 10 is an n-type semiconductor layer having a plate shape extending along the X axis and the Y axis. In the present embodiment, the semiconductor layer 120 is mainly made of gallium nitride (GaN) and contains silicon (Si) as a donor. The semiconductor layer 120 is stacked on the + Z axis direction side of the substrate 110. The semiconductor layer 120 has an interface 122 along the Y axis and the Z axis and facing the −X axis direction, and an interface 123 along the Y axis and the Z axis and facing the + Z axis direction.

  The semiconductor layer 130 of the semiconductor device 10 is a p-type semiconductor layer having a plate shape extending along the X axis and the Y axis. In the present embodiment, the semiconductor layer 130 is mainly made of gallium nitride (GaN) and contains magnesium (Mg) as an acceptor. The semiconductor layer 130 is stacked on the + Z axis direction side of the semiconductor layer 120. The semiconductor layer 130 extends along the X axis and the Y axis and faces the + Z axis direction, along the Y axis and the Z axis and faces the −X axis direction, and along the Y axis and the Z axis. And an interface 133 oriented in the + Z-axis direction.

  In the present embodiment, the semiconductor layer 130 includes two semiconductor layers 135 and 136 having different carrier concentrations. The semiconductor layer 135 is a p-type semiconductor layer stacked on the + Z-axis direction side of the semiconductor layer 120, and the semiconductor layer 136 is a p-type semiconductor layer stacked on the + Z-axis direction side of the semiconductor layer 135. In other embodiments, the semiconductor layer 130 may be a single-layer semiconductor layer or may be constituted by three or more semiconductor layers.

  A pn junction surface 160 is formed between the semiconductor layer 120 and the semiconductor layer 130. The pn junction surface 160 is an interface where the semiconductor layer 120 and the semiconductor layer 130 are bonded. An end 162 on the −X axis direction side in the pn junction surface 160 forms a boundary between the interface 122 of the semiconductor layer 120 and the interface 132 of the semiconductor layer 130. An end 163 on the + X axis direction side in the pn junction surface 160 forms a boundary between the interface 123 of the semiconductor layer 120 and the interface 133 of the semiconductor layer 130.

  The protective film 180 of the semiconductor device 10 has electrical insulation and covers each interface between the semiconductor layer 120 and the semiconductor layer 130. In the present embodiment, the protective film 180 is formed on the −X axis direction side of the semiconductor device 10 from the interface on the + Z axis direction side of the semiconductor layer 120, the interface portion 122 of the semiconductor layer 120, the end portion 162 of the pn junction surface 160, and the semiconductor. The region reaching the interface 131 of the semiconductor layer 130 through the interface 132 of the layer 130 is covered. In the present embodiment, the protective film 180 is formed on the + X-axis direction side of the semiconductor device 10 from the interface on the + Z-axis direction side of the semiconductor layer 120, the interface 123 of the semiconductor layer 120, the end 163 of the pn junction surface 160, the semiconductor layer. The region reaching the interface 131 of the semiconductor layer 130 through the interface 133 of 130 is covered.

  In the present embodiment, the withstand voltage required for the semiconductor device 10 is 600 V (volts), and the maximum voltage applied to the semiconductor layer 120 and the semiconductor layer 130 is 600 V. In accordance with this specification, the thickness of the protective film 180 is set so that the dielectric breakdown strength of the protective film 180 satisfies 8 to 10 MV / cm (megavolt / cm). The thickness of the protective film 180 is preferably 400 nm (nanometers) or more. In the present embodiment, the thickness of the protective film 180 is 600 nm. The thickness of the protective film 180 may be, for example, 3 μm (micrometer) when the withstand voltage is 3 kV (kilovolt), 50 μm when the withstand voltage is 50 kV, and the withstand voltage is 500 kV. In some cases, it may be 500 μm. The protective film 180 includes a first layer 181 and a second layer 182.

The first layer 181 in the protective film 180 is made of aluminum oxide (Al ₂ O ₃ ) and is adjacent to each interface between the semiconductor layer 120 and the semiconductor layer 130 (for example, the interfaces 122, 123, 131, 132, 133), The ends 162 and 163 of the pn junction surface 160 are covered. From the viewpoint of improving the workability of the protective film 180, the thickness of the first layer 181 is preferably 500 nm or less, more preferably 300 nm or less, and even more preferably 100 nm or less. In the present embodiment, the thickness of the first layer 181 is 100 nm. The thickness of the first layer 181 may be about 1 nm, which is a limit value that can practically control the film formation of the first layer 181.

The second layer 182 in the protective film 180 is a layer made of an electrically insulating material different from aluminum oxide (Al ₂ O ₃ ) and stacked on the first layer 181. In the present embodiment, the second layer 182 is made of silicon dioxide (SiO ₂ ). In the present embodiment, the thickness of the second layer 182 is 500 nm.

  In the protective film 180, an opening 185 that penetrates the first layer 181 and the second layer 182 is formed. In the process of removing the protective film 180 from the interface 131 of the semiconductor layer 130 until the interface 131 is exposed, at least the first layer 181 is removed from the interface 131 of the semiconductor layer 130 by wet etching. Structure.

  The ohmic electrode 192 of the semiconductor device 10 is an electrode that has conductivity and is ohmic-bonded to the interface 131 of the semiconductor layer 130. The ohmic electrode 192 is located inside the opening 185 of the protective film 180. In the present embodiment, the ohmic electrode 192 is an electrode that is alloyed by firing after a layer made of gold (Au) is laminated on a layer made of nickel (Ni).

  The field plate electrode 193 of the semiconductor device 10 is an electrode having conductivity and extending along the protective film 180 from the inside of the opening 185. Thus, the field plate electrode 193 forms a field plate structure in which the protective film 180 is sandwiched between the semiconductor layer 120 and the semiconductor layer 130. In the present embodiment, the field plate electrode 193 is made of aluminum (Al).

  The back electrode 198 of the semiconductor device 10 is a conductive electrode that is ohmic-bonded to the −Z-axis direction side of the substrate 110. In the present embodiment, the back electrode 198 is an electrode alloyed by firing after a layer made of aluminum (Al) is laminated on a layer made of titanium (Ti).

A-2. FIG. 2 is a process diagram showing a method for manufacturing the semiconductor device 10. When manufacturing the semiconductor device 10, the manufacturer forms the semiconductor layer 120 on the substrate 110 by epitaxial growth, and then forms the semiconductor layer 130 on the semiconductor layer 120 by epitaxial growth (process P110). In this embodiment, the manufacturer forms the semiconductor layer 120 and the semiconductor layer 130 on the substrate 110 by epitaxial growth using an MOCVD apparatus that realizes metal organic chemical vapor deposition (MOCVD).

  After forming the semiconductor layer 120 and the semiconductor layer 130 (process P110), the manufacturer forms an isolation for electrically separating the elements by etching (process P120). As a result, the interfaces 122 and 123 of the semiconductor layer 120 and the interfaces 132 and 133 of the semiconductor layer 130 are formed.

After forming the isolation (process P120), the manufacturer forms a first layer made of aluminum oxide (Al ₂ O ₃ ) on each interface exposed to the + Z-axis direction side in the semiconductor layer 120 and the semiconductor layer 130. 181 is formed (process P152). In the present embodiment, the manufacturer forms the first layer 181 by an ALD (Atomic Layer Deposition) method.

After forming the first layer 181 (process P152), the manufacturer forms a second layer 182 made of an electrically insulating material different from aluminum oxide (Al ₂ O ₃ ) on the first layer 181. (Step P154). As a result, the protective film 180 is formed on the semiconductor layer 120 and the semiconductor layer 130. In this embodiment, the manufacturer forms a second layer 182 made of silicon dioxide (SiO ₂ ). In the present embodiment, the manufacturer forms the second layer 182 by a chemical vapor deposition (CVD) method.

  After forming the second layer 182 (process P154), the manufacturer forms the opening 185 in the protective film 180 including the first layer 181 and the second layer 182 using wet etching (process P156). ). In this embodiment, the manufacturer forms the opening 185 by removing the first layer 181 and the second layer 182 by wet etching. In this embodiment, the etching solution used for forming the opening 185 is a hydrofluoric acid-based mixture prepared at a mixing ratio of dilute hydrofluoric acid (DHF): buffered hydrofluoric acid (BHF): water = 1: 4: 100. It is a liquid. In this embodiment, the processing speed of wet etching for the first layer 181 and the second layer 182 is 40 to 60 nm / min.

  FIG. 10 is an explanatory diagram showing a detailed configuration of the opening 185. In the present embodiment, the opening 185 is formed by processing the first layer 181 and the second layer 182 using isotropic wet etching. The first layer 181 has a surface 181 a that defines an opening 185, and the second layer 182 has a surface 182 a that defines an opening 185. Since the surface 181a of the first layer 181 is formed by isotropic wet etching, the opening 185 extends from the −Z-axis direction side to the + Z-axis direction side (from the semiconductor layer 130 side to the second layer 182 side). Tilt to the outside. Since the surface 182a in the second layer 182 is formed by isotropic wet etching, the surface 182a is inclined from the −Z-axis direction side to the + Z-axis direction side to the outside of the opening 185.

  FIG. 11 is an explanatory diagram showing a detailed configuration of the opening 185 in another embodiment. In other embodiments, the opening 185 is formed by processing the second layer 182 using anisotropic dry etching and then processing the first layer 181 using isotropic wet etching. Also good. The first layer 181 has a surface 181 b that defines the opening 185, and the second layer 182 has a surface 182 b that defines the opening 185. Since the surface 181b of the first layer 181 is formed by isotropic wet etching, the opening 185 extends from the −Z axis direction side to the + Z axis direction side (from the semiconductor layer 130 side to the second layer 182 side). Tilt to the outside. Since the surface 182b of the second layer 182 is formed by anisotropic dry etching, the surface 182b is substantially parallel to the Z-axis which is the thickness direction of the second layer 182.

  Returning to the description of FIG. 2, after forming the opening 185 (process P156), the manufacturer forms the ohmic electrode 192 at the interface 131 of the semiconductor layer 130 exposed inside the opening 185 of the protective film 180 (step P156). Step P172). In this embodiment, the manufacturer forms a mask on the protective film 180 by photolithography, and then forms a layer made of nickel (Ni) on the interface 131 of the semiconductor layer 130 exposed inside the opening 185 by vapor deposition. Then, a layer made of gold (Au) is further formed thereon by vapor deposition, and these layers are alloyed by firing to form the ohmic electrode 192.

  After forming the ohmic electrode 192 (process P172), the manufacturer extends the field plate electrode over the ohmic electrode 192 formed inside the opening 185 of the protective film 180 and beyond the opening 185 of the protective film 180. 193 is formed (process P173). In this embodiment, the manufacturer forms a mask on the protective film 280 by photolithography, and then forms a field plate electrode 193 made of aluminum (Al) by vapor deposition.

  After forming the field plate electrode 193 (process P173), the manufacturer forms the back electrode 198 on the −Z-axis direction side of the substrate 110 (process P174). In this embodiment, the manufacturer forms a layer made of titanium (Ti) by vapor deposition on the −Z-axis direction side of the substrate 110, and further forms a layer made of aluminum (Al) thereon by vapor deposition. The back electrode 198 is formed by alloying the layers by firing.

  Through these steps, the semiconductor device 10 is completed. In another embodiment, the process of forming the back electrode 198 (process P174) may be performed prior to the process of forming the ohmic electrode 192 (process P172) and the process of forming the field plate electrode 193 (process P173). Good.

A-3. Evaluation of Semiconductor Device FIG. 3 is a graph showing the evaluation result of the protective film 180. In the evaluation test of FIG. 3, the tester prepared a first sample and a second sample as semiconductor devices, and measured the reverse current density when a reverse voltage was applied to each sample. The first sample is the semiconductor device 10 described above. The second sample is the same as the semiconductor device 10 except that an insulating film made of silicon dioxide (SiO ₂ ) is provided instead of the protective film 180. The insulating film in the second sample is a single layer and has a thickness of 600 nm.

  The graph of FIG. 3 is a semilogarithmic graph showing the reverse current density of each sample with respect to the reverse voltage. In the graph of FIG. 3, the horizontal axis indicates the reverse voltage, and the vertical axis indicates the reverse current density using a logarithmic scale. In the graph of FIG. 3, a solid line L21 represents a measured value measured for the first sample, and a broken line L22 represents a measured value measured for the second sample.

  According to the evaluation result of FIG. 3, when the reverse voltage is 100 V or more, the first sample can suppress the reverse current density more than the second sample. That is, the first sample can suppress the leakage current more than the second sample.

A-4. Effects According to the first embodiment described above, the interfaces 122, 123, 131, 132, 133 of the semiconductor layers 120, 130 and the end portions 162, 163 of the pn junction surface are formed by the first layer 181 made of Al ₂ O _3. In addition, the thickness of the first layer 181 can be suppressed by reducing the leakage current and reinforcing the dielectric breakdown strength with the second layer 182 made of SiO ₂ . As a result, it is possible to improve both the electrical characteristics of the protective film 180 and the workability.

In addition, since the electrically insulating material of the second layer 182 is SiO ₂ , the dielectric breakdown strength of the insulating film can be effectively improved. In addition, since the electrical insulating material of the second layer 182 is SiO ₂ , wet etching and dry etching can be selected as etching processing for the second layer 182, so that the degree of freedom in selecting a processing method of the protective film 180 The processability of the protective film 180 can be further improved by selecting dry etching.

  In addition, since the thickness of the first layer 181 is 500 nm or less, etching defects due to wet etching on the first layer 181 can be effectively prevented.

  In addition, since the opening 185 has a structure in which the first layer 181 is removed from the semiconductor layer 130 by using wet etching, the semiconductor layer 130 has a structure compared with the case where the first layer 181 is removed by dry etching. Damage can be suppressed.

B. Second embodiment B-1. Configuration of Semiconductor Device FIG. 4 is a cross-sectional view schematically showing the configuration of the semiconductor device 20 in the second embodiment. FIG. 4 shows the XYZ axes as in FIG.

  The semiconductor device 20 is a GaN-based semiconductor device. In the present embodiment, the semiconductor device 20 is a vertical pn junction diode. The configuration of the semiconductor device 20 in the second embodiment is the same as the configuration of the semiconductor device 10 in the first embodiment except that the configuration of the protective film and the ohmic electrode is different. The semiconductor device 20 includes a substrate 210, a semiconductor layer 220, a semiconductor layer 230, a protective film 280, an ohmic electrode 292, a field plate electrode 293, and a back electrode 298.

  The substrate 210 of the semiconductor device 20 is the same as the substrate 110 of the first embodiment. The semiconductor layer 220 of the semiconductor device 20 is the same as the semiconductor layer 120 of the first embodiment. The semiconductor layer 220 is stacked on the + Z axis direction side of the substrate 110. The semiconductor layer 220 has an interface 222 along the Y axis and the Z axis and facing the −X axis direction, and an interface 223 along the Y axis and the Z axis and facing the + Z axis direction.

  The semiconductor layer 230 of the semiconductor device 20 is the same as the semiconductor layer 130 of the first embodiment. The semiconductor layer 230 is stacked on the + Z-axis direction side of the semiconductor layer 220. The semiconductor layer 230 is along the X-axis and Y-axis and the interface 231 facing the + Z-axis direction, the interface 232 along the Y-axis and Z-axis and facing the −X-axis direction, and along the Y-axis and Z-axis. And an interface 233 facing the + Z-axis direction. In the present embodiment, the semiconductor layer 230 includes two semiconductor layers 235 and 236 having different carrier concentrations, like the semiconductor layer 130 of the first embodiment.

  A pn junction surface 260 is formed between the semiconductor layer 220 and the semiconductor layer 230. The pn junction surface 260 is an interface where the semiconductor layer 220 and the semiconductor layer 230 are joined. An end 262 on the −X-axis direction side in the pn junction surface 260 forms a boundary between the interface 222 of the semiconductor layer 220 and the interface 232 of the semiconductor layer 230. An end 263 on the + Z-axis direction side in the pn junction surface 260 forms a boundary between the interface 223 of the semiconductor layer 220 and the interface 233 of the semiconductor layer 230.

  The protective film 280 of the semiconductor device 20 has electrical insulation and covers each interface between the semiconductor layer 220 and the semiconductor layer 230. In the present embodiment, the protective film 280 is formed on the −X axis direction side of the semiconductor device 20 from the interface on the + Z axis direction side of the semiconductor layer 220, the interface 222 of the semiconductor layer 220, the end portion 262 of the pn junction surface 260, the semiconductor. The region reaching the edge on the + Z-axis direction side of the ohmic electrode 292 through the interface 232 of the layer 230 and the interface 231 of the semiconductor layer 230 is covered. In the present embodiment, the protective film 280 includes, on the + X-axis direction side of the semiconductor device 20, from the interface on the + Z-axis direction side of the semiconductor layer 220, the interface 223 of the semiconductor layer 220, the end 263 of the pn junction surface 260, and the semiconductor layer The region reaching the edge of the ohmic electrode 292 on the + Z-axis direction side through the interface 233 of the semiconductor layer 230 and the interface 231 of the semiconductor layer 230 is covered.

  The thickness of the protective film 280 is preferably 400 nm or more. In this embodiment, the thickness is 600 nm set in the same manner as the protective film 180 of the first embodiment. The thickness of the protective film 280 may be, for example, 3 μm when the withstand voltage is 3 kV, 50 μm when the withstand voltage is 50 kV, and 500 μm when the withstand voltage is 500 kV. Also good. The protective film 280 includes a first layer 281 and a second layer 282.

The first layer 281 in the protective film 280 is made of aluminum oxide (Al ₂ O ₃ ), and is adjacent to each interface between the semiconductor layer 220 and the semiconductor layer 230 (for example, the interfaces 222, 223, 231, 232, 233), The ends 262 and 263 of the pn junction surface 260 are covered. From the viewpoint of improving the workability of the protective film 280, the thickness of the first layer 281 is preferably 500 nm or less, more preferably 300 nm or less, and even more preferably 100 nm or less. In the present embodiment, the thickness of the first layer 281 is 100 nm. The thickness of the first layer 281 may be about 1 nm which is a limit value that can practically control the film formation of the first layer 281.

The second layer 282 in the protective film 280 is a layer made of an electrically insulating material different from aluminum oxide (Al ₂ O ₃ ) and stacked on the first layer 281. In the present embodiment, the second layer 282 is made of silicon dioxide (SiO ₂ ). In the present embodiment, the thickness of the second layer 282 is 500 nm.

  In the protective film 280, an opening 285 that penetrates the first layer 281 and the second layer 282 is formed. The opening 285 has a structure in which at least the first layer 281 is removed from the ohmic electrode 292 by wet etching in the process of removing the protective film 280 from the ohmic electrode 292 until the ohmic electrode 292 is exposed.

  The ohmic electrode 292 of the semiconductor device 20 has conductivity and is an electrode that is in ohmic contact with the interface 231 of the semiconductor layer 230. The ohmic electrode 292 is provided on the −Z-axis direction side of the opening 285 and is wider than the opening 285 in the X-axis direction. The central portion of the ohmic electrode 292 in the X-axis direction is located inside the opening 285 of the protective film 280 and is adjacent to the field plate electrode 293 on the + Z-axis direction side. In this embodiment, the ohmic electrode 292 is an electrode that is alloyed by firing after a layer made of gold (Au) is laminated on a layer made of nickel (Ni).

  The field plate electrode 293 of the semiconductor device 20 is an electrode having conductivity and extending along the protective film 280 from the inside of the opening 285. Thus, the field plate electrode 293 forms a field plate structure in which the protective film 280 is sandwiched between the semiconductor layer 220 and the semiconductor layer 230. In the present embodiment, the field plate electrode 293 is made of aluminum (Al).

  The back electrode 298 of the semiconductor device 20 is the same as the back electrode 198 of the first embodiment. The back electrode 298 is ohmic-bonded to the −Z axis direction side of the substrate 210.

B-2. Semiconductor Device Manufacturing Method FIG. 5 is a process diagram showing a method of manufacturing the semiconductor device 20. When manufacturing the semiconductor device 20, the manufacturer forms the semiconductor layer 220 and the semiconductor layer 230 on the substrate 210 by epitaxial growth in the same manner as the semiconductor layer 120 and the semiconductor layer 130 of the first embodiment (process P210). ).

  After forming the semiconductor layer 220 (process P210), the manufacturer forms an isolation for electrically separating the elements by etching (process P220). As a result, the interfaces 222 and 223 of the semiconductor layer 220 and the interfaces 232 and 233 of the semiconductor layer 230 are formed.

  After forming the isolation (process P220), the manufacturer forms the ohmic electrode 292 on the interface 231 of the semiconductor layer 230 (process P230). In the present embodiment, the manufacturer forms a mask on each interface between the semiconductor layer 220 and the semiconductor layer 230 by photolithography, and then forms a layer made of nickel (Ni) on the interface 231 of the semiconductor layer 230 by vapor deposition. Further, a layer made of gold (Au) is further formed thereon by vapor deposition, and these layers are alloyed by firing to form an ohmic electrode 292.

After forming the ohmic electrode 292 (process P230), the manufacturer extends aluminum oxide (Al ₂ O ₃ ) from above each interface exposed on the + Z-axis direction side of the semiconductor layer 120 and the semiconductor layer 130 to above the ohmic electrode 292. The first layer 281 is formed (step P252). In this embodiment, the manufacturer forms the first layer 281 by the ALD method.

After forming the first layer 281 (process P252), the manufacturer forms a second layer 282 made of an electrically insulating material different from aluminum oxide (Al ₂ O ₃ ) on the first layer 281. (Step P254). As a result, the protective film 280 is formed on the semiconductor layer 220, the semiconductor layer 230, and the ohmic electrode 292. In this embodiment, the manufacturer forms a second layer 282 made of silicon dioxide (SiO ₂ ). In this embodiment, the manufacturer forms the second layer 282 by the CVD method.

  After forming the second layer 282 (process P254), the manufacturer forms the opening 285 in the protective film 280 including the first layer 281 and the second layer 282 using wet etching (process P256). ). In this embodiment, the manufacturer forms the opening 285 by removing the first layer 281 and the second layer 282 by wet etching. In the present embodiment, the etching solution used for forming the opening 285 is the same hydrofluoric acid-based mixed solution as in the first embodiment. In this embodiment, the processing speed of wet etching for the first layer 281 and the second layer 282 is 40 to 60 nm / min. The detailed configuration of the opening 285 is the same as the opening 185 of the first embodiment described with reference to FIGS. 10 and 11.

  After forming the opening 285 (process P256), the manufacturer covers the field plate electrode over the ohmic electrode 292 exposed inside the opening 285 of the protective film 280 and beyond the opening 285 of the protective film 280. 293 is formed (process P273). In the present embodiment, the manufacturer forms a mask on the protective film 280 by photolithography, and then forms a field plate electrode 293 made of aluminum (Al) by vapor deposition.

  After forming the field plate electrode 293 (process P273), the manufacturer forms the back electrode 298 on the −Z-axis direction side of the substrate 110, similarly to the back electrode 198 of the first embodiment (process P274).

  The semiconductor device 20 is completed through these steps. In another embodiment, the process of forming the back electrode 298 (process P274) may be performed prior to the process of forming the ohmic electrode 292 (process P220) or the process of forming the field plate electrode 293 (process P273). Good.

B-3. Effects According to the second embodiment described above, the leakage current at each interface between the semiconductor layer 220 and the semiconductor layer 230 is reduced by the first layer 281 made of Al ₂ O ₃ as in the first embodiment. The thickness of the first layer 281 can be suppressed by reinforcing the dielectric breakdown strength with the second layer 282 made of SiO ₂ . As a result, it is possible to improve both the electrical characteristics of the protective film 280 and the workability.

C. Third Embodiment FIG. 6 is a cross-sectional view schematically showing a configuration of a semiconductor device 30 in a third embodiment. FIG. 6 shows the XYZ axes as in FIG.

  The semiconductor device 30 is a GaN-based semiconductor device. In the present embodiment, the semiconductor device 30 is a planar pn junction diode. The semiconductor device 30 includes a substrate 310, a semiconductor layer 320, a semiconductor layer 330, a protective film 380, an ohmic electrode 392, and an ohmic electrode 398.

  The substrate 310 of the semiconductor device 30 is a semiconductor layer having a plate shape extending along the X axis and the Y axis. In this embodiment, the substrate 310 is a p-type semiconductor layer mainly made of gallium nitride (GaN) and containing magnesium (Mg) as an acceptor. The substrate 310 has an interface 311 along the X-axis and the Y-axis and facing the + Z-axis direction.

  The semiconductor layer 320 of the semiconductor device 30 is an n-type semiconductor layer that fills the concave portion on the + Z-axis direction side of the substrate 310. In the present embodiment, the semiconductor layer 320 is mainly made of gallium nitride (GaN) and contains silicon (Si) as a donor. The semiconductor layer 320 has an interface 321 along the X-axis and the Y-axis and facing the + Z-axis direction.

  The semiconductor layer 330 of the semiconductor device 30 is a p-type semiconductor layer that fills the concave portion on the + Z-axis direction side of the semiconductor layer 320. In the present embodiment, the semiconductor layer 330 is mainly made of gallium nitride (GaN) and contains magnesium (Mg) as an acceptor. The semiconductor layer 330 has an interface 331 along the X axis and the Y axis and facing the + Z axis direction.

  A pn junction surface 360 is formed between the substrate 310 and the semiconductor layer 320. The pn junction surface 360 is an interface where the substrate 310 and the semiconductor layer 320 are joined. The −X-axis direction end 362 of the pn junction surface 360 forms a boundary between the interface 311 of the substrate 310 and the interface 321 of the semiconductor layer 320 together with the + X-axis direction end 363 of the pn junction surface 360.

  A pn junction surface 370 is formed between the semiconductor layer 320 and the semiconductor layer 330. The pn junction surface 370 is an interface where the semiconductor layer 320 and the semiconductor layer 330 are joined. The −X-axis direction end 372 of the pn junction surface 370 forms a boundary between the interface 321 of the semiconductor layer 320 and the interface 331 of the semiconductor layer 330 together with the + X-axis direction end 373 of the pn junction surface 370. .

  The protective film 380 of the semiconductor device 30 has electrical insulation and covers each interface of the substrate 310, the semiconductor layer 320, and the semiconductor layer 330. The method for forming the protective film 380 is the same as the method for forming the protective film 180 in the first embodiment.

  In this embodiment, the protective film 380 passes through the interface 311 of the substrate 310, the end 362 of the pn junction surface 360, the interface 321 of the semiconductor layer 320, and the end 372 of the pn junction surface 370, and the interface 331 of the semiconductor layer 330. Cover the range up to. In the present embodiment, the protective film 380 covers a range from the interface 331 of the semiconductor layer 330 to the interface 321 of the semiconductor layer 320 through the end 373 of the pn junction surface 370. In the present embodiment, the protective film 380 covers a range from the interface 321 of the semiconductor layer 320 to the interface 311 of the semiconductor layer 330 through the end 363 of the pn junction surface 360.

  The thickness of the protective film 380 is preferably 400 nm or more. In this embodiment, the thickness is 600 nm set in the same manner as the protective film 180 of the first embodiment. The thickness of the protective film 380 may be, for example, 3 μm when the withstand voltage is 3 kV, may be 50 μm when the withstand voltage is 50 kV, and is 500 μm when the withstand voltage is 500 kV. Also good. The protective film 380 includes a first layer 381 and a second layer 382.

The first layer 381 in the protective film 380 is made of aluminum oxide (Al ₂ O ₃ ) and is adjacent to each interface (for example, the interfaces 311, 321, 331) of the substrate 310, the semiconductor layer 320, and the semiconductor layer 330. Thus, the first layer 381 covers the end portions 362 and 363 of the pn junction surface 360 and also covers the end portions 372 and 373 of the pn junction surface 370. From the viewpoint of improving the workability of the protective film 380, the thickness of the first layer 381 is preferably 500 nm or less, more preferably 300 nm or less, and even more preferably 100 nm or less. In the present embodiment, the thickness of the first layer 381 is 100 nm. The thickness of the first layer 381 may be about 1 nm which is a limit value that can practically control the film formation of the first layer 381.

The second layer 382 in the protective film 380 is a layer which is made of an electrically insulating material different from aluminum oxide (Al ₂ O ₃ ) and is stacked on the first layer 381. In the present embodiment, the second layer 382 is made of silicon dioxide (SiO ₂ ). In the present embodiment, the thickness of the second layer 382 is 500 nm.

  An opening 385 and an opening 386 that penetrate the first layer 381 and the second layer 382 are formed in the protective film 380. The opening 385 removes at least the first layer 381 from above the interface 331 of the semiconductor layer 330 by wet etching in the process of removing the protective film 380 from above the interface 331 of the semiconductor layer 330 until the interface 331 is exposed. This is the structure. The opening 386 has a structure in which at least the first layer 381 is removed from the interface 321 of the semiconductor layer 320 in the process of removing the protective film 380 from the interface 321 of the semiconductor layer 320 until the interface 321 is exposed. is there. The method of forming the opening 385 and the opening 386 is the same as the method of forming the opening in the protective film in the first embodiment.

  The ohmic electrode 392 of the semiconductor device 30 is an electrode that has conductivity and is ohmic-bonded to the interface 331 of the semiconductor layer 330. The ohmic electrode 392 is located inside the opening 385 of the protective film 380. In this embodiment, the ohmic electrode 392 is an electrode that is alloyed by firing after a layer made of gold (Au) is laminated on a layer made of nickel (Ni).

  The ohmic electrode 398 of the semiconductor device 30 has conductivity and is an electrode that is in ohmic contact with the interface 321 of the semiconductor layer 320. The ohmic electrode 398 is located inside the opening 386 of the protective film 380. In this embodiment, the ohmic electrode 398 is an electrode alloyed by firing after laminating a layer made of aluminum (Al) on a layer made of titanium (Ti).

  FIG. 7 is a cross-sectional view schematically showing the configuration of the semiconductor device 32 in a modification of the third embodiment. FIG. 7 shows the XYZ axes as in FIG. The semiconductor device 32 is the same as the semiconductor device 30 of FIG. 6 except that it includes a field plate electrode 393. The field plate electrode 393 is an electrode having conductivity and extending along the protective film 380 from the inside of the opening 385. Thus, the field plate electrode 393 forms a field plate structure in which the protective film 380 is sandwiched between the substrate 310, the semiconductor layer 320, and the semiconductor layer 330. In the present embodiment, the field plate electrode 393 is made of aluminum (Al).

  According to the third embodiment and its modification described above, both the improvement of the electrical characteristics of the protective film 380 and the improvement of workability can be achieved, as in the first embodiment.

D. Fourth Embodiment FIG. 8 is a cross-sectional view schematically showing a configuration of a semiconductor device 40 in a fourth embodiment. FIG. 8 shows the XYZ axes as in FIG.

  The semiconductor device 40 is a GaN-based semiconductor device. In the present embodiment, the semiconductor device 40 is a vertical bipolar transistor. The semiconductor device 40 includes a substrate 410, a semiconductor layer 420, a semiconductor layer 430, a semiconductor layer 440, a protective film 480, a base electrode 492, an emitter electrode 496, and a base electrode 498.

  The substrate 410 of the semiconductor device 40 is a semiconductor layer having a plate shape extending along the X axis and the Y axis. In this embodiment, the substrate 410 is an n-type semiconductor layer mainly made of gallium nitride (GaN) and containing silicon (Si) as a donor.

  The semiconductor layer 420 of the semiconductor device 40 is an n-type semiconductor layer having a plate shape extending along the X axis and the Y axis. In the present embodiment, the semiconductor layer 420 is mainly made of gallium nitride (GaN) and contains silicon (Si) as a donor. The semiconductor layer 420 is stacked on the + Z-axis direction side of the substrate 410. The semiconductor layer 420 has an interface 421 along the X-axis and the Y-axis and facing the + Z-axis direction.

  The semiconductor layer 430 of the semiconductor device 40 is a p-type semiconductor layer having a plate shape extending along the X axis and the Y axis. In the present embodiment, the semiconductor layer 430 is mainly made of gallium nitride (GaN) and contains magnesium (Mg) as an acceptor. The semiconductor layer 430 is stacked on the + Z axis direction side of the semiconductor layer 420. The semiconductor layer 430 has an interface 431 along the X axis and the Y axis and facing the + Z axis direction, and an interface 432 along the Y axis and the Z axis and facing the −X axis direction. The interface 432 of the semiconductor layer 430 is an interface that connects between the interface 421 of the semiconductor layer 420 and the interface 431 of the semiconductor layer 430.

  The semiconductor layer 440 of the semiconductor device 40 is an n-type semiconductor layer having a plate shape extending along the X axis and the Y axis. In the present embodiment, the semiconductor layer 420 is mainly made of gallium nitride (GaN) and contains silicon (Si) as a donor. The carrier concentration of the semiconductor layer 440 is higher than the carrier concentration of the substrate 410 and the semiconductor layer 420. The semiconductor layer 440 is stacked on the + Z axis direction side of the semiconductor layer 430. The semiconductor layer 440 includes an interface 441 along the X axis and the Y axis and facing the + Z axis direction, and an interface 442 along the Y axis and the Z axis and facing the −X axis direction. The interface 442 of the semiconductor layer 440 is an interface that connects between the interface 431 of the semiconductor layer 430 and the interface 441 of the semiconductor layer 440.

  A pn junction surface 460 is formed between the semiconductor layer 420 and the semiconductor layer 430. The pn junction surface 460 is an interface where the semiconductor layer 420 and the semiconductor layer 430 are joined. An end 462 of the pn junction surface 460 forms a boundary between the interface 421 of the semiconductor layer 420 and the interface 432 of the semiconductor layer 430.

  A pn junction surface 470 is formed between the semiconductor layer 430 and the semiconductor layer 440. The pn junction surface 470 is an interface where the semiconductor layer 430 and the semiconductor layer 440 are joined. An end 472 of the pn junction surface 470 forms a boundary between the interface 431 of the semiconductor layer 430 and the interface 442 of the semiconductor layer 440.

  The protective film 480 of the semiconductor device 40 has electrical insulation and covers each interface of the semiconductor layer 420, the semiconductor layer 430, and the four semiconductor layers 440. The method for forming the protective film 480 is the same as the method for forming the protective film 180 in the first embodiment.

  In the present embodiment, the protective film 480 covers a range from the interface 421 of the semiconductor layer 420 to the interface 431 of the semiconductor layer 430 through the end 462 of the pn junction surface 460 and the interface 432 of the semiconductor layer 430. In the present embodiment, the protective film 480 covers a range from the interface 431 of the semiconductor layer 430 to the interface 441 of the semiconductor layer 440 through the end 472 of the pn junction surface 470 and the interface 442 of the semiconductor layer 440.

  The thickness of the protective film 480 is preferably 400 nm or more. In the present embodiment, the thickness is 600 nm set similarly to the protective film 180 of the first embodiment. The thickness of the protective film 480 may be, for example, 3 μm when the withstand voltage is 3 kV, 50 μm when the withstand voltage is 50 kV, and 500 μm when the withstand voltage is 500 kV. Also good. The protective film 480 includes a first layer 481 and a second layer 482.

The first layer 481 in the protective film 480 is made of aluminum oxide (Al ₂ O ₃ ), and interfaces between the semiconductor layer 420, the semiconductor layer 430, and the four semiconductor layers 440 (for example, the interfaces 421, 431, 432, 441, 442). ). As a result, the first layer 481 covers the end 462 of the pn junction surface 460 and the end 472 of the pn junction surface 470. From the viewpoint of improving the workability of the protective film 480, the thickness of the first layer 481 is preferably 500 nm or less, more preferably 300 nm or less, and even more preferably 100 nm or less. In the present embodiment, the thickness of the first layer 481 is 100 nm. The thickness of the first layer 481 may be about 1 nm, which is a limit value that can practically control the film formation of the first layer 481.

The second layer 482 in the protective film 480 is a layer made of an electrically insulating material different from aluminum oxide (Al ₂ O ₃ ) and stacked on the first layer 481. In the present embodiment, the second layer 482 is made of silicon dioxide (SiO ₂ ). In the present embodiment, the thickness of the second layer 482 is 500 nm.

  In the protective film 480, an opening 485 and an opening 486 penetrating the first layer 481 and the second layer 482 are formed. In the process of removing the protective film 480 from above the interface 431 of the semiconductor layer 430 until the interface 431 is exposed, at least the first layer 481 is removed from above the interface 431 of the semiconductor layer 430 by wet etching. This is the structure. The opening 486 has a structure in which at least the first layer 481 is removed from above the interface 441 of the semiconductor layer 440 in the process of removing the protective film 480 from above the interface 441 of the semiconductor layer 440 until the interface 441 is exposed. is there.

  The base electrode 492 of the semiconductor device 40 has conductivity and is an electrode that is in ohmic contact with the interface 431 of the semiconductor layer 430. The base electrode 492 is located inside the opening 485 of the protective film 480. In this embodiment, the base electrode 492 is an electrode that is alloyed by firing after a layer made of gold (Au) is laminated on a layer made of nickel (Ni).

  The emitter electrode 496 of the semiconductor device 40 has conductivity and is an electrode that is in ohmic contact with the interface 441 of the semiconductor layer 440. The emitter electrode 496 is located inside the opening 486 of the protective film 480. In this embodiment, the emitter electrode 496 is an electrode formed by laminating a layer made of aluminum (Al) on a layer made of titanium (Ti) and then alloying it by firing.

  The base electrode 498 of the semiconductor device 40 is an electrode that has conductivity and is ohmic-bonded to the −Z-axis direction side of the substrate 410. In the present embodiment, the base electrode 498 is an electrode alloyed by firing after laminating a layer made of aluminum (Al) on a layer made of titanium (Ti).

  According to the fourth embodiment described above, as in the first embodiment, it is possible to improve both the electrical characteristics of the protective film 480 and the workability.

E. Fifth Embodiment FIG. 9 is a cross-sectional view schematically showing a configuration of a semiconductor device 50 in a fifth embodiment. FIG. 9 shows the XYZ axes as in FIG.

  The semiconductor device 50 is a GaN-based semiconductor device. In the present embodiment, the semiconductor device 50 is a vertical thyristor. The semiconductor device 50 includes a semiconductor layer 510, a semiconductor layer 520, a semiconductor layer 530, a semiconductor layer 540, a protective film 580, a gate electrode 592, a cathode electrode 596, and an anode electrode 598.

  The semiconductor layer 510 of the semiconductor device 50 is a p-type semiconductor layer having a plate shape extending along the X axis and the Y axis. In the present embodiment, the semiconductor layer 510 is mainly made of gallium nitride (GaN) and contains magnesium (Mg) as an acceptor.

  The semiconductor layer 520 of the semiconductor device 50 is an n-type semiconductor layer having a plate shape extending along the X axis and the Y axis. In the present embodiment, the semiconductor layer 520 is mainly made of gallium nitride (GaN) and contains silicon (Si) as a donor. The semiconductor layer 520 is stacked on the + Z axis direction side of the semiconductor layer 510. The semiconductor layer 520 has an interface 521 along the X axis and the Y axis and facing the + Z axis direction.

  The semiconductor layer 530 of the semiconductor device 50 is a p-type semiconductor layer that fills the concave portion on the + Z-axis direction side of the semiconductor layer 520. In the present embodiment, the semiconductor layer 530 is mainly made of gallium nitride (GaN) and contains magnesium (Mg) as an acceptor. The carrier concentration of the semiconductor layer 530 is lower than the carrier concentration of the semiconductor layer 510. The semiconductor layer 530 has an interface 531 along the X-axis and Y-axis and facing the + Z-axis direction.

  The semiconductor layer 540 of the semiconductor device 50 is an n-type semiconductor layer that fills the concave portion on the + Z-axis direction side of the semiconductor layer 530. In the present embodiment, the semiconductor layer 540 is mainly made of gallium nitride (GaN) and contains silicon (Si) as a donor. The carrier concentration of the semiconductor layer 540 is higher than the carrier concentration of the semiconductor layer 520. The semiconductor layer 540 has an interface 541 along the X axis and the Y axis and facing the + Z axis direction.

  A pn junction surface 560 is formed between the semiconductor layer 520 and the semiconductor layer 530. The pn junction surface 560 is an interface where the semiconductor layer 520 and the semiconductor layer 530 are bonded. An end 562 of the pn junction surface 560 forms a boundary between the interface 521 of the semiconductor layer 520 and the interface 531 of the semiconductor layer 530.

  A pn junction surface 570 is formed between the semiconductor layer 530 and the semiconductor layer 540. The pn junction surface 570 is an interface where the semiconductor layer 530 and the semiconductor layer 540 are joined. An end 572 of the pn junction surface 570 forms a boundary between the interface 531 of the semiconductor layer 530 and the interface 541 of the semiconductor layer 540.

  The protective film 580 of the semiconductor device 50 has electrical insulation and covers each interface of the semiconductor layer 520, the semiconductor layer 530, and the semiconductor layer 540. The method for forming the protective film 580 is the same as the method for forming the protective film 180 in the first embodiment.

  In the present embodiment, the protective film 580 covers a range from the interface 521 of the semiconductor layer 520 to the interface 531 of the semiconductor layer 530 through the end 562 of the pn junction surface 560. In the present embodiment, the protective film 580 covers a range from the interface 531 of the semiconductor layer 530 to the interface 541 of the semiconductor layer 540 through the end 572 of the pn junction surface 570.

  The thickness of the protective film 580 is preferably 400 nm or more. In this embodiment, the thickness is 600 nm set in the same manner as the protective film 180 of the first embodiment. The thickness of the protective film 580 may be, for example, 3 μm when the withstand voltage is 3 kV, 50 μm when the withstand voltage is 50 kV, and 500 μm when the withstand voltage is 500 kV. Also good. The protective film 580 includes a first layer 581 and a second layer 582.

The first layer 581 in the protective film 580 is made of aluminum oxide (Al ₂ O ₃ ) and is adjacent to each interface (for example, the interfaces 521, 531, and 541) of the semiconductor layer 520, the semiconductor layer 530, and the semiconductor layer 540. As a result, the first layer 581 covers the end 562 of the pn junction surface 560 and the end 572 of the pn junction surface 570. From the viewpoint of improving the workability of the protective film 580, the thickness of the first layer 581 is preferably 500 nm or less, more preferably 300 nm or less, and even more preferably 100 nm or less. In the present embodiment, the thickness of the first layer 581 is 100 nm. The thickness of the first layer 581 may be about 1 nm which is a limit value that can practically control the film formation of the first layer 581.

The second layer 582 in the protective film 580 is a layer which is made of an electrically insulating material different from aluminum oxide (Al ₂ O ₃ ) and is stacked on the first layer 581. In the present embodiment, the second layer 582 is made of silicon dioxide (SiO ₂ ). In the present embodiment, the thickness of the second layer 582 is 500 nm.

  In the protective film 580, an opening 585 and an opening 586 that penetrate the first layer 581 and the second layer 582 are formed. The opening 585 removes at least the first layer 581 from above the interface 531 of the semiconductor layer 530 by wet etching in the process of removing the protective film 580 from above the interface 531 of the semiconductor layer 530 until the interface 531 is exposed. This is the structure. The opening 586 removes at least the first layer 581 from above the interface 541 of the semiconductor layer 540 by wet etching in the process of removing the protective film 580 from above the interface 541 of the semiconductor layer 540 until the interface 541 is exposed. This is the structure. The method of forming the opening 585 and the opening 586 is the same as the method of forming the opening in the protective film in the first embodiment.

  The gate electrode 592 of the semiconductor device 50 is an electrode that has conductivity and is in ohmic contact with the interface 531 of the semiconductor layer 530. The gate electrode 592 is located inside the opening 585 of the protective film 580. In this embodiment, the gate electrode 592 is an electrode that is alloyed by firing after a layer made of gold (Au) is laminated on a layer made of nickel (Ni).

  The cathode electrode 596 of the semiconductor device 50 is an electrode that has conductivity and is in ohmic contact with the interface 541 of the semiconductor layer 540. The cathode electrode 596 is located inside the opening 586 of the protective film 580. In the present embodiment, the cathode electrode 596 is an electrode alloyed by firing after laminating a layer made of aluminum (Al) on a layer made of titanium (Ti).

  The anode electrode 598 of the semiconductor device 50 is an electrode that has conductivity and is ohmic-bonded to the −Z-axis direction side of the semiconductor layer 510. In this embodiment, the anode electrode 598 is an electrode that is alloyed by firing after a layer made of gold (Au) is laminated on a layer made of nickel (Ni).

F. Other Embodiments The present invention is not limited to the above-described embodiments, examples, and modifications, and can be realized with various configurations without departing from the spirit thereof. For example, the technical features in the embodiments, examples, and modifications corresponding to the technical features in each embodiment described in the summary section of the invention are to solve some or all of the above-described problems, or In order to achieve part or all of the above-described effects, replacement or combination can be performed as appropriate. Further, if the technical feature is not described as essential in the present specification, it can be deleted as appropriate.

  The insulating film in the above embodiment may be applied to an insulating film of a semiconductor device having a structure different from that in the above embodiment.

  In the above-described embodiment, the first layer in the protective film may be formed of two or more layers. When the first layer is formed of a plurality of layers, the total thickness of these layers is preferably 500 nm or less, more preferably 300 nm or less, and even more preferably 100 nm or less.

In the above-described embodiment, the second layer electrical insulating material in the protective film includes silicon dioxide (SiO ₂ ), silicon nitride (SiN), silicon oxynitride (SiON), hafnium oxide (HfO ₂ ), It may be at least one of aluminum nitride (AlN), zirconium oxide (ZrO ₂ ), and zirconium oxynitride (ZrON). When the electrical insulating material of the second layer is at least one of SiO ₂ , SiN, and SiON, wet etching and dry etching can be selected as etching processing for the second layer. The degree of freedom of selection can be improved, and the processability of the protective film can be further improved by selecting dry etching. Moreover, when the electrical insulating material of the second layer is at least one of HfO ₂ , AlN, ZrO _2, and ZrON, the function of the insulating film that reduces electric field concentration can be effectively improved.

  In the above-described embodiment, the second layer in the protective film may be formed of two or more layers. When the second layer is formed of a plurality of layers, the materials of these layers may be the same or different.

  In the above-described embodiment, the method of forming each layer of the protective film is not limited to the ALD method, and may be a sputtering method.

In the above-described embodiment, the material of the substrate is not limited to gallium nitride (GaN), but may be silicon (Si), sapphire (Al ₂ O ₃ ), silicon carbide (SiC), or the like. Note that a material that easily conducts electricity is applied to the substrate in the vertical semiconductor device, and a material that is difficult to conduct electricity is applied to the substrate in the horizontal semiconductor device.

  In the above-described embodiment, the donor included in the n-type semiconductor layer is not limited to silicon (Si), but may be germanium (Ge), oxygen (O), or the like.

  In the above-described embodiment, the acceptor included in the p-type semiconductor layer is not limited to magnesium (Mg) but may be zinc (Zn), carbon (C), or the like.

  In the above-described embodiment, the material of the ohmic electrode joined to the p-type semiconductor layer is not limited to an alloy of nickel (Ni) and gold (Au) but may be other metals.

  In the above-described embodiment, the material of the ohmic electrode joined to the p-type semiconductor layer is not limited to an alloy of titanium (Ti) and aluminum (Al), but may be other metals.

  In the above-described embodiment, the material of the field plate electrode is not limited to aluminum (Al) but may be other metals.

DESCRIPTION OF SYMBOLS 10, 20, 30, 32, 40, 50 ... Semiconductor device 110 ... Substrate 120 ... Semiconductor layer 121, 122, 123 ... Interface 130 ... Semiconductor layer 131, 132, 133 ... Interface 135 ... Semiconductor layer 136 ... Semiconductor layer 160 ... pn Bonding surfaces 162, 163 ... end 180 ... protective film 181 ... first layer 181a, 181b ... surface 182 ... second layer 182a, 182b ... surface 185 ... opening 192 ... ohmic electrode 193 ... field plate electrode 198 ... back surface Electrode 210 ... Substrate 220 ... Semiconductor layer 221,222,223 ... Interface 230 ... Semiconductor layer 231,232,233 ... Interface 235 ... Semiconductor layer 260 ... PN junction surface 262,263 ... End 280 ... Protective film 281 ... First Layer 282 ... Second layer 285 ... Opening 292 ... Ohmic electrode 293 ... Field plane Toe electrode 298 ... Back electrode 310 ... Substrate 311 ... Interface 320 ... Semiconductor layer 321 ... Interface 330 ... Semiconductor layer 331 ... Interface 360 ... pn junction surface 362, 363 ... End portion 370 ... pn junction surface 372, 373 ... End portion 380 Protective film 381 First layer 382 Second layer 385 386 Opening 392 Ohmic electrode 393 Field plate electrode 398 Ohmic electrode 410 Substrate 420 Semiconductor layer 421 Interface 430 Semiconductor layer 431 432 ... Interface 440 ... Semiconductor layers 441,442 ... Interface 460 ... pn junction surface 462 ... End portion 470 ... pn junction surface 472 ... End portion 480 ... Protective film 481 ... First layer 482 ... Second layer 485,486 ... Opening 492 ... Base electrode 496 ... Emitter electrode 498 ... Base electrode 510 ... Semiconductor layer 520 Semiconductor layer 521 ... Interface 530 ... Semiconductor layer 531 ... Interface 540 ... Semiconductor layer 541 ... Interface 560 ... pn junction surface 562 ... End portion 570 ... pn junction surface 572 ... End portion 580 ... Protective film 581 ... First layer 582 ... First Layer 2 585 ... opening 586 ... opening 592 ... gate electrode 596 ... cathode electrode 598 ... anode electrode

Claims (5)

A semiconductor device,
A p-type semiconductor layer mainly composed of gallium nitride (GaN);
An n-type semiconductor layer mainly composed of gallium nitride (GaN) and bonded to the p-type semiconductor layer;
A protective film having electrical insulation and covering the p-type semiconductor layer and the n-type semiconductor layer;
An electrode having electrical conductivity and ohmic-bonded to at least one of the p-type semiconductor layer and the n-type semiconductor layer,
The protective film is
It is made of aluminum oxide (Al ₂ O ₃ ) and covers an end portion of a pn junction surface adjacent to the p-type semiconductor layer and the n-type semiconductor layer and joined to the p-type semiconductor layer and the n-type semiconductor layer. A first layer to
A _second layer made of an electrically insulating material different from aluminum oxide (Al ₂ O ₃ ) and stacked on the first layer;
An opening penetrating the first layer and the second layer, and
The electrode is a semiconductor device located inside the opening. The electrically insulating material forming the second layer is silicon dioxide (SiO ₂ ), silicon nitride (SiN), silicon oxynitride (SiON), hafnium oxide (HfO ₂ ), and aluminum nitride (AlN). The semiconductor device according to claim 1, wherein the semiconductor device is at least one of zirconium oxide (ZrO ₂ ) and zirconium oxynitride (ZrON).   The semiconductor device according to claim 1, wherein a thickness of the first layer is 500 nm or less.   4. The semiconductor device according to claim 1, wherein a total thickness of the protective film including the first layer and the second layer is 400 nm or more. 5.   5. The surface of the first layer that defines the opening portion is inclined from the semiconductor layer side to the second layer side toward the outside of the opening portion. A semiconductor device according to 1.

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