JP2015005759A - Method of manufacturing semiconductor device, semiconductor device, sensor module, and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having high reliability.SOLUTION: A method of manufacturing a semiconductor device 1 comprises the steps of: preparing a semiconductor element 10 having a first surface 10a and electrodes 12 located on the first surface 10a; forming a first resin layer 20 on the first surface 10a including the electrodes 12; forming a first metal layer 31 electrically connected to the electrodes 12 on a third surface 23 of the first resin layer 20 opposite to a second surface 22 facing the semiconductor layer 10; forming a second resin layer 41 covering a sixth surface 35 connecting a fourth surface 33 of the first metal layer 31 facing the first resin layer 20 and a fifth surface 34 opposite to the fourth surface 33 and the fifth surface 34 of the first metal layer 31; providing openings 42 exposing the fifth surface 34 of the first metal layer 31 on the second resin layer 41; and forming second metal layers 51 in the openings 42 by electroless plating with the second resin layer 41 covering the sixth surface 35 of the first metal layer 31.

Description

  The present invention relates to a method for manufacturing a semiconductor device, a semiconductor device manufactured by the manufacturing method, a sensor module using the semiconductor device, and an electronic apparatus having the sensor module.

  Conventionally, an electrode pad is formed on the upper surface of a semiconductor element, a resin layer is formed so as to expose a part of the electrode pad, and a metal layer connected to the electrode pad is formed on the upper surface of the resin layer by electrolytic plating. A method for manufacturing a semiconductor device has been proposed (for example, Patent Document 1).

JP 2005-38932 A

  According to Patent Document 1 described above, a metal layer connected to the electrode pad is formed on the upper surface of the resin layer, one or two barrier metal layers are formed by sputtering, and electrolytic plating is further formed on the upper surface. A metal layer which is a main conductor layer is formed. Therefore, compared with the case where the main conductor layer is formed directly on the upper surface of the resin layer, the number of steps is increased by the amount of forming the barrier metal layer. In addition, when a metal layer that is a main conductor layer is formed on the upper surface of the resin layer by electrolytic plating, the plating solution penetrates between the resin layer and the metal layer, and the metal layer is easily peeled off from the resin layer. Have.

  When a sensor element is mounted on a semiconductor device, a bonding material such as a solder ball, solder paste, or Ag paste is used as a means for electrically and mechanically bonding the semiconductor device and the sensor element. These bonding materials are cured by heating. At this time, it is conceivable that the fluidity of the bonding material is increased by heating and the bonding material flows out to reach the semiconductor substrate. However, when the semiconductor substrate is at a GND (ground) potential, a short circuit occurs. As a result, there is a problem that normal operation is not performed.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 A semiconductor device manufacturing method according to this application example includes a step of preparing a semiconductor element having a first surface and an electrode positioned on the first surface, and the first including the electrode. Forming a first resin layer on the surface, and a third surface electrically connected to the electrode and opposite to the second surface of the first resin layer facing the semiconductor element Forming a first metal layer, a fourth surface of the first metal layer facing the first resin layer, and a fifth surface opposite to the fourth surface. Forming a second resin layer covering the surface 6 and the fifth surface, providing an opening for exposing the fifth surface in the second resin layer, and the second And a step of forming a second metal layer by electroless plating in the opening in a state where the resin layer covers the sixth surface.

  According to this application example, the first metal layer covers the fifth surface (upper surface) and the sixth surface (side surface) with the second resin layer. That is, the exposed surface of the first metal layer other than the opening of the second resin layer is covered with the second resin layer. Therefore, even if the second metal layer is formed using electroless plating in a state where the second resin layer is formed, the plating solution penetrates between the first metal layer and the first resin layer. There is an effect that the adhesion between the first metal layer and the first resin layer can be maintained.

  Further, in Patent Document 1, two layers of barrier metal are formed between the main conductor layer and the resin layer. However, in the present embodiment, the first metal layer has an opening formed by the second resin layer. Except for the method of forming the second metal layer after covering the fifth surface (upper surface) and the sixth surface (side surface), the process can be omitted from the conventional example.

  Application Example 2 In the semiconductor device manufacturing method according to the application example, the opening has a taper that extends from the fifth surface, and the taper angle in the outer direction of the semiconductor element is the inner direction of the semiconductor element. The taper angle is preferably larger than the taper angle.

  As means for electrically and mechanically joining the semiconductor device and an external element (for example, a sensor element), a joining material such as a solder ball, solder paste, or Ag paste is used. These bonding materials are heat-cured. At this time, it is considered that the fluidity is increased by heating and the bonding material flows out to reach the semiconductor substrate. However, the taper angle in the outer direction (edge direction) of the semiconductor element is made larger than the taper angle in the inner direction of the semiconductor element. This makes it difficult for the bonding material to flow in the edge direction of the semiconductor element, and as a result, a short circuit with the semiconductor element can be prevented.

  [Application Example 3] In the method of manufacturing a semiconductor device according to the application example, the taper may include the amount of the second resin layer from an end of the semiconductor element to the opening, and the semiconductor element from the opening. It is desirable to form by heat-curing in a state where the amount is smaller than the amount of the second resin layer inside.

  The material used for the second resin layer generally has heat shrinkability. A material having the same thermal shrinkage rate has a large amount of shrinkage in a portion with a large amount of resin (large volume), and a small amount of shrinkage when the amount of resin is small (small volume). Since the amount of resin from the end of the semiconductor element to the opening is smaller than the amount of resin inside from the opening, the amount of shrinkage is small. Therefore, even if heating is performed in the same process, the taper angle in the outer direction of the semiconductor element becomes larger than the taper angle in the inner direction of the semiconductor element, so that a process for changing the taper angle is not particularly necessary.

  Application Example 4 A semiconductor device according to this application example includes a first surface, a semiconductor element having an electrode positioned on the first surface, a first resin layer positioned on the first surface, A first metal layer electrically connected to the electrode and located on a third surface opposite to a second surface of the first resin layer facing the semiconductor element; and the first metal Covering a fourth surface of the layer facing the first resin layer, a sixth surface connecting the fifth surface opposite to the fourth surface, and the fifth surface; and And a second resin layer having an opening exposing a part of the fifth surface, and a second metal layer formed by electroless plating inside the opening. .

  According to this application example, the first metal layer covers the fifth surface (upper surface) and the sixth surface (side surface) with the second resin layer. That is, the entire exposed surface of the first metal layer other than the opening is covered with the second resin layer. Therefore, even if the second metal layer is formed using electroless plating in a state where the second resin layer is formed, the plating solution penetrates between the first metal layer and the first resin layer. Therefore, the adhesion between the first metal layer and the first resin layer can be maintained, and a highly reliable semiconductor device can be realized.

  Application Example 5 In the semiconductor device according to the application example, the opening portion has a taper that extends from the fifth surface, and the taper angle in the outer direction of the semiconductor element is the taper angle in the inner direction of the semiconductor element. Is preferably larger.

  As means for electrically and mechanically joining the semiconductor device and an external element (for example, a sensor element), a joining material such as a solder ball, solder paste, or Ag paste is used. These bonding materials are heat-cured. At this time, it is considered that the fluidity is increased by heating and the bonding material flows out to reach the semiconductor substrate. However, the taper angle in the outer direction (edge direction) of the semiconductor element is made larger than the taper angle in the inner direction of the semiconductor element. This makes it difficult for the bonding material to flow in the edge direction of the semiconductor element, and as a result, a short circuit with the semiconductor element can be prevented.

  Application Example 6 A sensor module according to this application example includes a first surface, a semiconductor element having an electrode located on the first surface, a first resin layer located on the first surface, A first metal layer electrically connected to the electrode and located on a third surface opposite to a second surface of the first resin layer facing the semiconductor element; and the first metal Covering a fourth surface of the layer facing the first resin layer, a sixth surface connecting the fifth surface opposite to the fourth surface, and the fifth surface; and A semiconductor device comprising: a second resin layer having an opening exposing a part of the fifth surface; and a second metal layer formed by electroless plating inside the opening; Inside the opening, the protruding electrode connected to the second metal layer is opposite to the surface of the protruding electrode facing the second metal layer. And a sensor element having a connection electrode disposed at a position in contact with the protruding electrode, and the second metal layer and the connection electrode are electrically connected by a conductive paste. To do.

  Here, as a sensor element, vibrators, such as an acceleration sensor and an angular velocity sensor (gyro sensor), are represented, for example. Therefore, in the semiconductor device manufactured using the method for manufacturing a semiconductor device described in the application example described above, the plating solution permeates between the first metal layer and the first resin layer during electroless plating. Since the adhesion between the first metal layer and the first resin layer can be maintained, a highly reliable sensor module can be realized.

  In addition, the bonding between the semiconductor device and the sensor element is performed by heating and curing using a conductive paste while regulating the position in the height direction with protruding electrodes (for example, stud bumps), and electrical connection and mechanical Join. At this time, by making the taper angle in the outer direction (edge direction) of the semiconductor element larger than the taper angle in the inner direction of the semiconductor element, the conductive paste is less likely to flow in the edge direction of the semiconductor element. A short circuit with the element can be prevented. Therefore, it is possible to increase the process yield and realize a highly reliable sensor module.

  Application Example 7 An electronic apparatus according to this application example includes the sensor module described in the application example.

  Examples of sensor elements used as electronic devices include a quartz resonator, a surface acoustic wave element (SAW), a MEMS structure, and the like in addition to the acceleration sensor and the angular velocity sensor described above. It can be used for telephones, video cameras, personal computers, digital cameras, etc.

FIG. 6 is a cross-sectional view showing the main steps of the method for manufacturing the semiconductor device according to the first embodiment. FIG. 9 is a cross-sectional view showing the main steps of a method for manufacturing a semiconductor device according to Example 2. FIG. 9 is a cross-sectional view showing the main steps of a method for manufacturing a semiconductor device according to Example 3. FIG. 9 is a cross-sectional view showing main steps of a method for manufacturing a semiconductor device according to Example 4; Sectional drawing which shows one example of a sensor module. The top view which shows schematic structure of a vibration gyro element. The fragmentary sectional view which shows the junction structure of a semiconductor device and a vibration gyro element. The schematic plan view explaining the operation | movement of a vibration gyro element (driving vibration state). The schematic plan view explaining operation | movement of a vibration gyro element (detection vibration state).

Hereinafter, embodiments and examples of the present invention will be described with reference to the drawings.
In the following description, for convenience of illustration, the vertical and horizontal scales are different from actual ones.
First, the manufacturing method of the semiconductor device 1 will be exemplified below with reference to a plurality of examples, and the semiconductor device manufactured based on these examples will be described.
Example 1

  FIG. 1 is a cross-sectional view illustrating the main steps of the method of manufacturing a semiconductor device according to the first embodiment. First, a semiconductor device 10 in a wafer state is prepared in which an electrode 12 and an insulating layer 15 are formed on the upper surface of the semiconductor substrate 11 including a peripheral portion of the electrode 12 on a semiconductor substrate 11 having circuit elements (not shown) (FIG. 1). (A), see). In this embodiment, the electrode 12 is an electrode pad and there are a plurality of electrodes, but FIG. 1A illustrates three electrodes 12a to 12c. The insulating layer 15 has openings 16a to 16c in the respective regions of the electrodes 12a to 12c. Here, the upper surface of the insulating layer 15 including the electrode 12 is defined as a first surface 10a.

  Next, the first resin layer 20 is formed on the upper surface of the first surface 10a (see FIG. 1b). The first resin layer 20 is coated with a photosensitive polyimide resin or PBO resin (polybenzoxazole) using a spin coating method, and then patterned using a photolithographic method, and the electrodes 12a to 12c are respectively formed. The exposed openings 21a to 21c are opened. In the present embodiment, the first resin layer 20 is a stress relaxation layer. Here, the surface of the first resin layer 20 that faces the semiconductor element 10 (the surface that joins the first surface 10a) is the second surface 22, and the opposite surface (the upper surface of the first resin layer 20). The third surface 23 is assumed. The third surface 23 also includes the upper surfaces of the electrodes 12a to 12c.

  Next, the first metal layer 31 is formed on the third surface 23 (see FIG. 1C). The first metal layer 31 is a metal layer mainly composed of Cu, and is formed on the third surface 23 using a sputtering method or the like. The first metal layer 31 is patterned into the first metal layers 31a to 31c, and each is electrically connected to the electrodes 12a to 12c. The first metal layers 31a to 31c are separated by the openings 32a and 32b. In the present embodiment, the first metal layer 31 is a rearrangement wiring.

  Here, the surface of the first metal layer 31 facing the first resin layer 20 (surface joined to the third surface 23) is the fourth surface 33, and the surface opposite to the fourth surface 33 (first surface). The upper surface of the first metal layer 31) is the fifth surface 34, and the surface connecting the fourth surface 33 and the fifth surface 34 (the side surface of the first metal layer 31) is the sixth surface 35.

  Next, a second resin layer 41 that covers the fifth surface 34 and the sixth surface 35 is formed (see FIG. 1D). The second resin layer 41 employs a resin having photosensitivity and heat-shrinkability, for example, a polyimide resin, and uses a means such as spin coating to prevent the first metal layer 31 from being exposed. 34 and the entire sixth surface 35 are covered.

Next, patterning is performed using a photolithography method to separate the second resin layer 41 into second resin layers 41a and 41b, and openings 42a to 42c exposing the fifth surface 34 of the first metal layer 31. Is provided. The electrode 12a and the electrode 12c are electrodes corresponding to electrode pads and are arranged at the peripheral edge of the semiconductor element 10, and the electrode 12b is arranged inside the electrodes 12a and 12c of the semiconductor element 10. The first metal layer 31b connected to the electrode 12b not used as the electrode pad is exposed through the opening 42c. Thereafter, it is cured by heating.
These openings 42 a to 42 c have a taper that extends upward from the fifth surface 34 (a direction opposite to the direction from the fifth surface 34 toward the semiconductor substrate 11).

  The taper angles of the openings 42a and 42b are the most in the outer direction of the semiconductor element 10 (from the respective openings, the outer periphery of the surface on which the electrodes 12a to 12c of the semiconductor element 10 are provided, respectively. The taper angle θ1 in the direction toward the near outer periphery is formed to be larger than the taper angle θ2 in the inner direction of the semiconductor element 10. The taper angles θ1 and θ2 are determined by the amount of the second resin layer 41 from the end portion (outer peripheral edge portion) of the semiconductor element 10 to the opening portion 42a (the same applies to the opening portion 42b), and from the opening portion 42a to the semiconductor element 10. It is formed by heat-curing in a state where it is less than the amount of the inner second resin layer 41.

  This is because, since the second resin layer 41 has heat shrinkability, the portion with a large amount of resin (volume is large) has a large amount of shrinkage, and when the amount of resin is small (volume is small), the amount of shrinkage. Is small. Since the amount of resin from the end of the semiconductor element 10 to the opening 42a is smaller than the amount of resin inside the opening 42a, the amount of shrinkage is small. Therefore, when the heat curing is performed under the same conditions, the taper angle θ1 in the outer direction of the semiconductor element 10 becomes larger than the taper angle θ2 in the inner direction, so that a process for changing the taper angle is not particularly necessary.

Next, in a state where the second resin layer 41 covers the surface of the first metal layer 31, the second metal layer 51 is formed in the openings 42a to 42c by electroless plating (FIG. 1E). ,reference). The second metal layer 51 is made of Ni / Pd / Au or Ni / Au. Note that portions where the second metal layer 51 is unnecessary are masked. The second metal layer 51a is formed on the surface of the first metal layer 31a in the opening 42a, the second metal layer 51c is formed on the surface of the first metal layer 31c in the opening 42b, and the second metal layer 51c is formed in the opening 42c. A second metal layer 51b is formed on the surface of the first metal layer 31b. In this way, the semiconductor device 1 is formed.
The second metal layers 51a and 51c may be formed on a tapered surface outside the region shown.

The first metal layer 31b is covered with the second metal layer 51b including the sixth surface 35 (side surface). The formation region of the second metal layer 51 b has a large area in the inner direction of the semiconductor element 10. When mounting the semiconductor device 1 and a sensor element to be described later, the second metal layer 51b has a light-transmitting property, and becomes a laser protective layer when performing laser trimming after mounting.
(Semiconductor device according to Example 1)

  As shown in FIG. 1E, the semiconductor device 1 manufactured by the manufacturing method of the first embodiment described above includes the semiconductor element 10 having the electrode 12 positioned on the first surface 10a, and the first surface 10a. The first resin layer 20 located on the first resin layer 20 is electrically connected to the electrode 12 and is located on the third surface 23 opposite to the second surface 22 facing the semiconductor element 10 of the first resin layer 20. And a first metal layer 31.

Furthermore, a sixth surface 35 that connects the fourth surface 33 of the first metal layer 31 facing the first resin layer 20 and the fifth surface 34 opposite to the fourth surface 33, Openings 42a to 42c that cover the fifth surface 34 and expose a part of the fifth surface 34 are provided.
The second resin layer 41 and the second metal layer 51 formed by electroless plating inside the openings 42a to 42c are configured.

  The openings 42a and 42b are tapered so that the taper angle θ1 in the outer direction of the semiconductor element 10 is larger than the taper angle θ2 in the inner direction of the semiconductor element 10.

  When a sensor module is configured by mounting the sensor element on the semiconductor device 1 described above, the semiconductor device 1 is provided with a connection element for connecting the sensor element. This will be described with reference to FIG. The second metal layers 51a and 51c in the openings 42a and 42b of the semiconductor device 1 formed through the steps shown in FIGS. 1A to 1E are provided as protruding electrodes. Au stud bumps 80 are formed. Note that FIG. 1F illustrates the opening 42b.

The Au stud bump 80 protrudes from the uppermost surface of the second resin layer 41 b and is formed in a state where the tip portion can be connected to the sensor element 100. Since the second metal layer 51 is made of Ni / Pd / Au and has good bonding properties with Au, the Au stud bump 80 and the second metal layer 51 have excellent connection strength and electrical connection. It has sex.
A configuration including the Au stud bump 80 may be the semiconductor device 1.
After the second metal layer 51 is formed (the state shown in FIG. 1E), the semiconductor devices are separated into individual pieces. Alternatively, the Au stud bumps 80 may be formed after being formed.

  Therefore, according to the method for manufacturing the semiconductor device 1 and the semiconductor device according to the present embodiment, the entire surface of the first metal layer 31 other than the openings 42 a to 42 c is covered with the second resin layer 41. Therefore, even if the second metal layer 51 is formed using electroless plating in a state where the second resin layer 41 is formed, the plating solution is used for the first metal layers 31a and 31c and the first resin layer 20. There is an effect that the adhesion between the first metal layers 31a and 31c forming the Au stud bump 80 and the first resin layer 20 can be maintained.

  In Patent Document 1, two layers of barrier metal are formed between the main conductor layer and the resin layer. However, in this embodiment, the first metal layer 31 is opened by the second resin layer 41. Since the fifth surface 34 (upper surface) and the sixth surface 35 (side surface) are covered except for the portions 42a, 42b, and 42c, the second metal layer 51 is formed by electroless plating. The process can be omitted from the conventional example.

  Further, the openings 42a and 42b formed in the second resin layer 41 have a taper, and the taper angle θ1 in the outer direction of the semiconductor element 10 is formed to be larger than the taper angle θ2 in the inner direction. . By doing so, when a bonding material having fluidity is used when bonding the semiconductor device 1 and the sensor element 100, the bonding material is less likely to flow in the edge direction of the semiconductor element 10, and as a result, the semiconductor element Accordingly, a short circuit with the semiconductor substrate 11 which is the base portion of 10 can be prevented.

Further, in the present embodiment, the first metal layer 31b and the second metal layer 51b are laser protective layers when the sensor element 100 is bonded, and are formed on the semiconductor element 10 when the sensor element 100 is subjected to laser trimming. Preventing damage.
(Example 2)

Next, Example 2 will be described with reference to the drawings. Example 2 is characterized in that the formation region of the second resin layer and the second metal layer is different from Example 1 (see FIG. 1) described above. Therefore, the description will be made with the same reference numerals mainly on the differences from the first embodiment.
FIG. 2 is a cross-sectional view illustrating the main steps of the method for manufacturing the semiconductor device 1 according to the second embodiment. Here, the process of forming the first resin layer 20 and the first metal layer 31 on the semiconductor element 10 (see FIGS. 2A to 2C) is performed in the first embodiment (FIG. 1A). ) To FIG. 1 (c)).

  After forming the first metal layer 31, a second resin layer 41 that covers the fifth surface 34 and the sixth surface 35 of the first metal layer 31 is formed (see FIG. 2D). The second resin layer 41 employs a resin having photosensitivity and heat shrinkability, for example, a polyimide resin, and covers the entire surface so that the first metal layer 31 is not exposed using a film forming means such as printing. Cover and heat cure.

  Next, openings 42 a and 42 b that expose the fifth surface 34 of the first metal layer 31 are formed in the second resin layer 41 using a photolithography method. The positions of the electrodes 12a and 12c are the same as those in the first embodiment. These openings 42a and 42b have a taper.

  The taper angles of the openings 42 a and 42 b are formed so that the taper angle θ <b> 1 in the outer direction (outer peripheral edge 2 direction) of the semiconductor element 10 is larger than the taper angle θ <b> 2 in the inner direction of the semiconductor element 10. These taper angles θ1 and θ2 are the amounts of the second resin layer from the end portion (outer peripheral edge portion) of the semiconductor element 10 to the opening portion 42a (the same applies to the opening portion 42b), and the inside of the semiconductor element 10 from the opening portion 42a. It is formed by heat curing in a state where the amount is less than the amount of the second resin layer.

Next, in a state where the second resin layer 41 covers the surface of the first metal layer 31, the second metal layer 51 is formed by electroless plating in the openings 42a and 42b (FIG. 2 (e)). ),reference). The second metal layer 51 is made of Ni / Pd / Au. Then, the second metal layer 51a is formed on the surface of the first metal layer 31a in the opening 42a, and the second metal layer 51c is formed on the surface of the first metal layer 31c in the opening 42b. In this way, the semiconductor device 1 is formed.
The second metal layers 51a and 51c may be formed on a tapered surface outside the region shown.

  In the semiconductor device 1 thus formed, Au stud bumps 80 are formed as in the first embodiment (see FIG. 1F).

In Example 2, although a part of formation area of the 2nd resin layer 41 and the 2nd metal layer 51 differs from Example 1, the effect similar to Example 1 is acquired.
Example 3

Next, Example 3 will be described with reference to the drawings. Example 3 is different from Example 2 described above (see FIG. 2) in that a third metal layer is further formed on the upper surface of the second resin layer, and the formation region of the second metal layer is different. Has characteristics. Therefore, the description will be made with the same reference numerals mainly on the differences from the second embodiment.
FIG. 3 is a cross-sectional view illustrating the main steps of the method of manufacturing a semiconductor device according to the third embodiment. Here, a process of forming the first resin layer 20, the first metal layer 31, and the second resin layer 41 on the first surface 10a of the semiconductor element 10 (FIGS. 3A to 3D, Reference) is the same as Example 1 (see FIGS. 1A to 1D).

  In the second resin layer 41, openings 42a and 42b (common to FIG. 2D) and an opening 42c are formed. The opening 42c exposes the first metal layer 31b. Here, the surface of the second resin layer 41 facing the first metal layer 31 is represented as a seventh surface 43, and the surface opposite to the seventh surface 43 is represented as an eighth surface 44. A region inside the openings 42a and 42b of the second resin layer 41 is represented as a second resin layer 41a.

  Next, a third metal layer 60 as a laser protective layer is formed on the eighth surface 44 of the second resin layer 41a (see FIG. 3E). The third metal layer 60 is formed on the upper surface of the eighth surface 44 using the same process as that of the first metal layer 31 and penetrates through the opening 42c of the second resin layer 41 to form the first metal. It is electrically connected to the layer 31b. The third metal layer 60 is a second rearrangement wiring when the first metal layer 31 is the first rearrangement wiring. Here, the surface opposite to the eighth surface 44 of the second resin layer 41 of the third metal layer 60 is the ninth surface 61, the surface opposite to the ninth surface 61 is the tenth surface 62, A surface (side surface) connecting the ninth surface 61 and the tenth surface 62 is referred to as an eleventh surface 63. The openings 42a and 42b have the same taper as in the first and second embodiments.

  Next, the second metal layer 51 is formed (see FIG. 3F). The method of forming the second metal layer 51 is performed using electroless plating as in the first and second embodiments. However, the ninth surface 61 and the tenth surface 62 of the third metal layer 60 are used. The second metal layer 51a covers the fifth surface 34 of each of the first metal layers 31a and 31c in the openings 42a and 42b opened to the second resin layer 41 while covering the eleventh surface 63. , 51b are formed.

  In the semiconductor device 1 thus formed, Au stud bumps 80 are formed as in the first embodiment (see FIG. 1F).

  In the third embodiment described above, the third metal layer 60 is further formed on the upper surface of the second resin layer 41, and the second metal layer 51 is covered with the entire surface of the third metal layer 60. Although the formation is different from the first and second embodiments, the same effect can be obtained.

Further, by providing the third metal layer 60 as a laser protective layer, the protection capability of the semiconductor element 10 when performing laser trimming can be further enhanced.
Example 4

Next, Example 4 will be described with reference to the drawings. The fourth embodiment is characterized in that a third resin layer that covers the third metal layer is formed with respect to the above-described third embodiment (see FIG. 3). Therefore, the description will be made with the same reference numerals mainly on the differences from the third embodiment.
FIG. 4 is a cross-sectional view illustrating the main steps of the method of manufacturing a semiconductor device according to the fourth embodiment. Here, the step of forming the first resin layer 20, the first metal layer 31, the second resin layer 41, and the third metal layer 60 on the first surface 10 a of the semiconductor element 10 is the same as that in Example 3 ( Since it is the same as FIG. 3 (a)-FIG.3 (e), illustration and description are abbreviate | omitted.

  A third metal layer 60 as a laser protective layer is formed on the eighth surface 44 of the second resin layer 41 (see FIG. 3E). In this state, the third resin layer 70 that covers the ninth surface 61, the tenth surface 62, and the eleventh surface 63 of the third metal layer 60 is replaced with the first resin layer 20 (FIG. 1B, (See FIG. 4B).

  Next, the second metal layer 51 is formed in the openings 42a and 42b of the second resin layer 41 in the same manner as in the second embodiment (see FIG. 2E) (FIG. 4C). reference). The second metal layer 51 has a second metal layer 51a in the opening 42a and a second metal layer 51c in the opening 42b.

  In the semiconductor device 1 thus formed, Au stud bumps 80 are formed as in the first embodiment (see FIG. 1F).

In the fourth embodiment described above, the third resin layer 70 that covers the third metal layer 60 is different from the third embodiment, but similar effects can be obtained.
The third metal layer 60 is divided into a plurality of parts by patterning together with the electrode 12b. Accordingly, by covering the third metal layer 60 with the third resin layer 70, a short circuit between the plurality of third metal layers 60 and a short circuit between the third metal layer 60 and the second metal layer 51 are prevented. There is an effect that can be done.
(Sensor module)

Next, an example of the sensor module will be described.
FIG. 5 is a cross-sectional view showing an example of a sensor module. In FIG. 5, the sensor module 110 is stored in a package in a state where the sensor element 100 is bonded to the semiconductor device 1 described in each of the above-described embodiments using Au stud bumps 80 as protruding electrodes. The package includes a package main body 111 made of a light-transmitting material, a side wall 113, and a metal lid 114, and the semiconductor device 1 and the sensor element 100 are stored in a space 115 formed by these. .

  Although illustration is omitted, an internal electrode is provided on the inner bottom surface of the package body 111, connected to the electrode 12 of the semiconductor device 1 by wire bonding, and connected to an external electrode 117 provided on the outer bottom surface of the package body 111. Connected by.

The semiconductor device 1 is fixed to the package body 111 in a state where the sensor element 100 is bonded. As the sensor element, for example, an acceleration sensing element, a pressure sensing element that reacts to pressure, a weight sensing element that reacts to weight, and the like can be adapted. However, in the following description, the vibration gyro element 100 is used as the sensor element. An example will be described. Therefore, the sensor module is a gyro sensor module.
Next, a junction structure between the semiconductor device 1 and the vibrating gyro element 100 will be described. First, an example of the vibrating gyro element 100 will be described.

FIG. 6 is a plan view showing a schematic configuration of the vibrating gyro element. In FIG. 6, the vibrating gyro element 100 is formed using a quartz crystal, which is a piezoelectric material, as a base material (material constituting a main part). The crystal has an X axis called an electric axis, a Y axis called a mechanical axis, and a Z axis called an optical axis.
The vibrating gyro element 100 is cut out along a plane defined by the X-axis and the Y-axis orthogonal to the crystal crystal axis and processed into a flat plate shape, and has a predetermined thickness in the Z-axis direction orthogonal to the plane. ing. The predetermined thickness is appropriately set depending on the oscillation frequency (resonance frequency), the outer size, workability, and the like.

Further, the flat plate forming the vibrating gyro element 100 can tolerate errors in the angle of cut-out from the crystal in a certain range for each of the X axis, the Y axis, and the Z axis. For example, it is possible to use what is cut out by rotating in the range of 0 to 2 degrees around the X axis. The same applies to the Y axis and the Z axis.
The vibrating gyro element 100 is formed by etching (wet etching or dry etching) using a photolithography technique. Note that a plurality of vibrating gyro elements 100 can be obtained from one quartz wafer.

As shown in FIG. 6, the vibrating gyro element 100 has a configuration called a double T type.
The vibration gyro element 100 includes a base portion 108 located at the center portion, a pair of detection vibration arms 101a and 101b as vibration portions extending from the base portion 108 along the Y axis, and detection vibration arms 101a and 101b. A pair of connecting arms 102a and 102b extended from the base 108 along the X-axis so as to be orthogonal to each other and from the distal ends of the connecting arms 102a and 102b so as to be parallel to the detection vibrating arms 101a and 101b. Each pair of driving vibrating arms 103a, 103b, 104a, 104b is provided as a vibrating portion extending along the Y axis.

In the vibration gyro element 100, detection electrodes (not shown) are formed on the detection vibration arms 101a and 101b, and drive electrodes (not shown) are formed on the drive vibration arms 103a, 103b, 104a, and 104b.
The vibration gyro element 100 constitutes a detection vibration system that detects angular velocity with the vibration arms for detection 101a and 101b, and the vibration gyro element 100 includes the connection arms 102a and 102b and the vibration arms for drive 103a, 103b, 104a, and 104b. The drive vibration system which drives is comprised.

Further, weights 105a and 105b are formed at the respective distal ends of the detection vibrating arms 101a and 101b, and weights 106a and 106b are formed at the respective distal ends of the driving vibrating arms 103a, 103b, 104a and 104b. , 107a, 107b are formed.
Thereby, the vibration gyro element 100 is miniaturized and the detection sensitivity of the angular velocity is improved.

  Connecting beams 123 a, 123 b, 124 a, and 124 b are extended from each of the four corners of the substantially rectangular base portion 108, and the distal ends of the connecting beams 123 a and 124 a are connected by a fixed end 121. The distal ends of the connecting beams 123b and 124b are connected by a fixed end 122. Three connection electrodes 109 to which the above-described detection electrodes or drive electrodes are connected are appropriately distributed and arranged on the back side of the fixed ends 121 and 122 in the figure. The connection electrode 109 is an electrode bonded to the semiconductor device 1 and holds the vibrating gyro element 100 in a balanced manner when bonded to the semiconductor device 1. The connecting beams 123a, 123b, 124a, and 124b have a corrugated shape in plan view, and vibration leakage and the like are suppressed by increasing the beam length.

Next, a junction structure between the semiconductor device 1 and the vibration gyro element 100 will be described with reference to the drawings.
FIG. 7 is a partial cross-sectional view showing a junction structure between a semiconductor device and a vibrating gyro element. In this embodiment, as shown in FIG. 6, three connection electrodes 109 are provided at the fixed ends 121 and 122 of the vibration gyro element 100, and the semiconductor device 1 has Au at positions corresponding to the connection electrodes 109. Stud bumps 80 are provided, and these connection electrodes 109 and Au stud bumps 80 are joined. In FIG. 7, an explanation will be given taking one of them as an example.

  An appropriate amount of Ag paste 130 as a conductive paste is supplied into the opening 42b of the semiconductor device 1 by a dispenser or the like. In this state, the vibration gyro element 100 is brought into contact with the Au stud bump 80 of the semiconductor device 1 so that the connection electrode 109 is positioned, and the Ag paste 130 is heated and cured in a heating furnace. The element 100 is electrically and mechanically joined.

  In this way, the connection electrode 109 is electrically connected to the electrode 12c of the semiconductor element 10 via the Ag paste 130 (including the Au stud bump 80) via the second metal layer 51c and the first metal layer 31c. The

  The Ag paste 130 temporarily increases in fluidity during heat curing, and may flow out from the inside of the opening 42b to the surface of the second resin layer 41b. At this time, since the taper angle θ1 in the outer direction of the opening 42b is larger than the taper angle θ2 in the inner direction (see FIG. 1D), the outflow of the Ag paste in the outer direction can be suppressed. This is effective for preventing the flowing Ag paste 130 from reaching the semiconductor substrate 11 (electrically GND) along the outer peripheral side surface of the semiconductor device 1.

Next, the operation of the vibrating gyro element 100 will be described.
8 and 9 are schematic plan views for explaining the operation of the vibrating gyro element. FIG. 8 shows a driving vibration state, and FIGS. 9A and 9B show a detection vibration state in a state where an angular velocity is applied. In FIGS. 8 and 9, each vibrating arm is represented by a line in order to simply represent the vibration state.

In FIG. 8, the drive vibration state of the vibration gyro element 100 will be described.
First, when a drive signal is applied from the semiconductor device 1, the vibrating gyro element 100 causes the driving vibrating arms 103 a, 103 b, 104 a, and 104 b to bend and vibrate in the direction indicated by the arrow E in a state where no angular velocity is applied. In this bending vibration, a vibration state indicated by a solid line and a vibration state indicated by a two-dot chain line are repeated at a predetermined frequency.

When an angular velocity ω about the Z axis is applied to the vibrating gyro element 100 in a state where the driving vibration is performed, the vibrating gyro element 100 performs vibration as shown in FIG.
First, as shown in FIG. 9A, Coriolis force in the direction of arrow B acts on the driving vibrating arms 103a, 103b, 104a, 104b and the connecting arms 102a, 102b constituting the driving vibration system. At the same time, the detection vibrating arms 101a and 101b are deformed in the arrow C direction in response to the Coriolis force in the arrow B direction.

Thereafter, as shown in FIG. 9B, a force returning in the direction of the arrow B ′ acts on the driving vibrating arms 103a, 103b, 104a, 104b and the connecting arms 102a, 102b. At the same time, the vibrating arms for detection 101a and 101b are deformed in the direction of the arrow C ′ in response to the force in the direction of the arrow B ′.
Thus, the vibration gyro element 100 repeats this series of operations alternately to excite a new vibration.
The vibrations in the directions of arrows B and B ′ are vibrations in the circumferential direction with respect to the center of gravity G. The vibrating gyro element 100 can obtain the angular velocity by detecting the distortion of the crystal generated by the vibration by the detection electrodes formed on the vibrating arms for detection 101a and 101b.

  Since the sensor module 110 described above uses the semiconductor device 1 manufactured by the manufacturing method described in the first to fourth embodiments, a highly reliable sensor module can be realized.

  In addition, the semiconductor device 1 and the vibrating gyro element 100 are bonded by heating and curing using the Ag paste 130 while restricting the positions in the height direction with the Au stud bumps 80, thereby performing electrical connection and mechanical bonding. Do. At this time, by making the taper angle θ1 in the outer direction (edge direction) of the semiconductor element 10 larger than the taper angle θ2 in the inner direction, the Ag paste 130 becomes difficult to flow in the edge direction of the semiconductor substrate 11, and as a result, A short circuit with the semiconductor substrate 11 can be prevented. Therefore, it is possible to increase the process yield and realize a highly reliable sensor module.

  Further, the vibration gyro element 100 performs trimming of the resonance frequency by irradiating laser light from the package body 111 side in the state of the sensor module 110, and a laser protective layer is formed in the laser light irradiation region. Thus, damage to the semiconductor element 10 due to laser light irradiation can be prevented.

The sensor module 110 according to the present embodiment has a configuration including one vibration gyro element 100, but includes a second vibration gyro element orthogonal to the illustrated vibration gyro element 100 (first vibration gyro element). A three-axis sensor module including a two-axis sensor module, a first vibration gyro element, and a third vibration gyro element orthogonal to the second vibration gyro element can be provided.
(Electronics)

Next, an electronic device using the above-described sensor module 110 will be described. The drawings are omitted.
Examples of sensor elements used as electronic devices include the above-described vibration gyro element, acceleration sensor element, weight sensing element, crystal resonator, surface acoustic wave element (SAW), MEMS structure, and the like. Can be used for mobile phones, video cameras, personal computers, digital cameras, and the like. By using a small and highly reliable sensor module, it is possible to achieve downsizing and high reliability of electronic equipment.

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 10 ... Semiconductor element, 10a ... 1st surface, 12 ... Electrode, 20 ... 1st resin layer, 22 ... 2nd surface, 23 ... 3rd surface, 31 ... 1st metal layer 33 ... 4th surface, 34 ... 5th surface, 35 ... 6th surface, 41 ... 2nd resin layer, 42 ... opening part, 51 ... 2nd metal layer.

Claims (7)

Preparing a semiconductor element having a first surface and an electrode located on the first surface;
Forming a first resin layer on the first surface including the electrodes;
Forming a first metal layer on a third surface of the first resin layer that is electrically connected to the second surface of the first resin layer opposite to the second surface;
A fourth surface of the first metal layer facing the first resin layer, a sixth surface connecting a fifth surface opposite to the fourth surface, the fifth surface, Forming a second resin layer covering
Providing an opening for exposing the fifth surface in the second resin layer;
Forming a second metal layer by electroless plating in the opening with the second resin layer covering the sixth surface;
A method for manufacturing a semiconductor device, comprising: In the manufacturing method of the semiconductor device according to claim 1,
The opening has a taper extending from the fifth surface;
A method of manufacturing a semiconductor device, wherein a taper angle in an outer direction of the semiconductor element is formed to be larger than a taper angle in an inner direction of the semiconductor element. In the manufacturing method of the semiconductor device according to claim 2,
The taper is in a state where the amount of the second resin layer from the end of the semiconductor element to the opening is smaller than the amount of the second resin layer inside the semiconductor element from the opening. A method for manufacturing a semiconductor device, wherein the semiconductor device is formed by heat curing. A semiconductor element having a first surface and an electrode located on the first surface;
A first resin layer located on the first surface;
A first metal layer electrically connected to the electrode and located on a third surface opposite to the second surface of the first resin layer facing the semiconductor element;
A sixth surface connecting the fourth surface of the first metal layer facing the first resin layer and a fifth surface opposite to the fourth surface; and the fifth surface And a second resin layer having an opening that exposes a part of the fifth surface;
A second metal layer formed by electroless plating inside the opening;
A semiconductor device comprising: The semiconductor device according to claim 4,
The opening has a taper extending from the fifth surface;
A semiconductor device, wherein a taper angle in an outer direction of the semiconductor element is larger than a taper angle in an inner direction of the semiconductor element. A first element; a semiconductor element having an electrode located on the first face; a first resin layer located on the first face; and the first resin electrically connected to the electrode. A first metal layer positioned on a third surface opposite to the second surface facing the semiconductor element, and a fourth metal layer facing the first resin layer of the first metal layer. An opening that covers the fifth surface and the sixth surface that connects the surface and the fifth surface opposite to the fourth surface and exposes a part of the fifth surface A semiconductor device comprising: a second resin layer having a second metal layer formed by electroless plating inside the opening;
A protruding electrode connected to the second metal layer inside the opening,
A sensor element having a connection electrode located on the opposite side of the surface facing the second metal layer of the protruding electrode and disposed at a position in contact with the protruding electrode;
The sensor module, wherein the second metal layer and the connection electrode are electrically connected with a conductive paste.   An electronic apparatus comprising the sensor module according to claim 6.

Images