JP2014165486A - Power device module and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power device module excellent in large current, high heat radiation, and high heat resistance, and to provide a manufacturing method thereof.SOLUTION: The power device module having a lead frame core filled with a high heat-resistant resin includes: a metal structure (tower) of three or more layers metal-coupled between surface layer conductor circuits 3 on the surface and the rear face and an inner-layer conductor circuit 4; and electronic components such as a power device mounted on the surface layer conductor circuit 3, a capacitor 6, and a resistor 7. The power device middle is an optimal high power device module including a metal structure (tower) of three or more layers, enabling juxtaposition of large current conductor circuits and control conductor circuits on the same planes of the surface and the rear face of outer layer parts to include the large current conductor circuits and heat-radiation conductor circuits.

Description

The present invention provides a current control circuit using a power semiconductor of an electronic device, a next-generation power semiconductor, a power module, and the like, and an optimum wiring module with a large current and a high heat resistance, and a manufacturing method thereof, in order to realize a low-carbon society. It is about.

With the demand for higher performance and smaller size of electronic equipment for low-carbon society, circuit modules that realize low loss using next-generation power semiconductors (SiC), power electronic components, etc. There is a need for heat resistance, high heat dissipation, and further miniaturization. In addition, since power electronic components (semiconductor elements and the like) involve a large current and a high temperature, it is necessary to provide and mount a wiring module corresponding to a large current, high heat resistance, and high heat dissipation characteristics.

High-power, high-efficiency inverters and other high-power modules and large-current modules have changed with the increasing performance of industrial equipment such as control equipment and motors for a low-carbon society. Occurrence and increase. For electric vehicles (EV), hybrid vehicles (HEV), robots, solar power generation, wind power generation conditioners, industrial motors, on / off switching loss, etc., SiC (silicon carbide) is used for high current control and high power power supply. In order to efficiently dissipate this heat, the large power module board is currently being developed with aluminum nitride that has thermal conductivity in line with requirements. In many cases, a ceramic substrate such as silicon nitride and a metal plate such as a copper plate or an aluminum plate are bonded to the front and back surfaces thereof.

On the other hand, as a technology to improve heat dissipation from the cost aspect, an aluminum metal substrate or a copper metal substrate is used for a conventional printed circuit board made of glass epoxy resin, and a conductor circuit is formed through an insulating layer on one side or both sides. Metal base substrates to be formed are known. However, when using high power such as a SiC power semiconductor, such a metal substrate has many problems such as insufficient heat resistance and heat dissipation for low power applications.

Conventionally, ceramic substrates such as alumina and aluminum nitride are often used as substrates that require high current, high heat resistance, and high heat dissipation. It has excellent heat resistance and can withstand temperatures from 300 ° C to 400 ° C. On the other hand, ceramic substrates are expensive and have problems such as mechanical shock and weakness. It is not supported.

Japanese Patent No. 3214696

The above metal base substrate and ceramic substrate are still difficult to achieve in terms of specifications, performance and cost for high-power device applications, so a heat conduction module by injection molding that integrates a lead frame with a thermoplastic resin is proposed. Has been. However, there are problems such as insufficient filling of the filler on the molding surface, increased cost, heat resistance, and insufficient heat dissipation. Therefore, the conventional metal base substrate and ceramic substrate have been a major issue including performance and cost performance.
Moreover, heat resistance, high heat conduction through a metal body directly under the component, and high efficiency heat dissipation have not been sufficient for power devices and the like that are heat generating components.

Based on this background, the power device module of the present invention is most excellent as a high current, high heat resistance, high heat dissipation surface, etc. It is valid.
The present invention is filled with the high heat-resistant thermosetting resin or thermoplastic resin mentioned in the embodiment as the insulating layer of the lead frame, and the heat dissipation part and the high-current circuit part are high with metal bonding that maximizes the efficiency. Provided are a power device module and a manufacturing method for ensuring connection reliability.
In addition, the conductor wiring for large currents can be arranged in multiple layers through metal bonding on the front and back, and control wiring can be installed on the same surface on the front and back, so connection reliability is high and downsizing Thus, a more efficient high heat dissipation power device module can be provided.
The conductor wiring extends over the core layer of the lead frame and three or more layers on the front and back of the substrate, and a conductor circuit according to the pattern specifications can be arbitrarily formed in each layer. In addition, the size and height of the metal column structure of the lead frame formed in the inner layer can be provided in any size and arrangement according to the specifications.
Fine conductor circuits such as integrated circuit (IC) components can be formed on the front and back surface layers.
In addition, components (L: coil, C: capacitor, R: resistor, IC: integrated circuit) can be incorporated in the heat-resistant insulating resin filled in the inner layer for miniaturization.

In the present invention, a metal plate is used as a lead frame material, an insulating layer is formed by filling a heat resistant resin between adjacent and upper and lower lead frames after pattern formation, and conductor circuits are formed on the front and back outer layers to generate a large current. A power device module capable of simultaneously achieving conductor wiring, control wiring, and high heat dissipation through metal bonding of a lead frame, having excellent heat dissipation, and capable of directly mounting semiconductor components is provided and provided.
As the lead frame material, copper is mainly used and oxygen free copper (symbol: C1020), tough pitch copper (symbol: C1100) and other copper alloys are selected and used.
High current conductor wiring and control conductor wiring can be arbitrarily provided over three or more layers. As an example, electroless copper plating and electrolysis are applied to the outer layer portion of the structure of the conductor and the high heat resistance insulating layer. After the copper plating, a conductive circuit wiring is formed through the formation of a photosensitive liquid etching resist (or photosensitive dry film etching resist), exposure, development, and etching processes.

In order to solve the above-mentioned problems, the present invention enables a manufacturing process in which a lead frame and a heat-resistant insulating resin are molded and processed into a shape according to the structure and specifications of the module. High heat resistance power device module with high heat dissipation for high current devices, high power device semiconductors, high connection reliability with printed heat filling of insulating layers with lead frames that can handle large currents The manufacturing method is characterized by high performance and low cost.

As an insulating layer filled between the lead frames of the present invention, as an example, a high heat resistant resin that can withstand 180 ° C. or more is a thermoplastic LCP (liquid crystal polymer), a thermosetting resin is a novolak type, an imidazole type epoxy, a cyanate resin, etc. Power that can be selected and filled with laminated heat press or vacuum printing so that no voids are generated, improves adhesion to the metal structure, and realizes large current and high heat dissipation with the lead frame circuit surface and insulating layer flush. A device module can be provided.
As the high heat-resistant resin, either a thermosetting resin or a thermoplastic resin can be selected, and the withstand voltage composed of the above-mentioned epoxy, PEEK, phenol, LCP, polyimide, cyanate, super engineering plastics, etc., which are high heat resistant resins, Use resin with high mechanical strength.
Thereby, the combination of the lead frame and the conductor pattern can provide a high current, high withstand voltage, and high heat dissipation wiring module that can withstand higher temperature and severe temperature cycle environment and has the highest connection reliability.

When creating the wiring of the metal structure by the lead frame and the control conductor wiring of the front and back (outer layer part), as an example, the electroless copper plating and the electrolytic copper plating are about 25 μm to 50 μm on the circuit surface side of the surface layer. Then, a fine pattern such as a control conductor wiring can be formed by performing a photosensitive etching resist, exposure, development, and a copper etching process. In order to increase the adhesion strength of the plating for the conductor wiring on the resin surface to be subjected to copper plating, the resin surface of the insulating layer is subjected to a roughening treatment for increasing the anchor effect before the copper plating.

The conductor pattern forming body of the outer shape of the lead frame structure is further etched from both the upper and lower sides in the thickness direction to form an uneven shape, and an insulating layer is arbitrarily inserted under the front and back conductors by filling with a high heat resistance resin. It is possible to form a metal structure ridge of three or more layers including the pattern of the outer layer and the pattern of the core layer.
Further, by performing etching, a multilayer structure having three or more layers can be formed.
The metal combination (structure) between the pad pattern part of the front and back conductor wiring and the lead frame can be set and arranged arbitrarily for conduction or separation, such as large current wiring, fine control wiring, and heat dissipation conductor path Can be provided. By the above etching, it is possible to create an arbitrary metal column (convex structure) shape and a wiring module having a multilayer structure as shown in the cross-sectional views of FIGS. 4 and 5.

(Process overview)
In the embodiment, the conductor part is formed first around the core metal structure of the core part, and the front and back conductor circuit, conductor connection (metal bond), etc. are designed and configured according to the wiring specifications, etc., and the metal structure It is characterized by producing a wiring module structure optimized for high current and high heat dissipation by filling and sealing between layers with high heat-resistant insulating resin.
As a result, it is possible to provide a power device module that is optimal for mounting components such as elements on the front and back patterns, high heat dissipation in a metal-bonded structure, and large current.
The main outline procedure is as follows.
1) Creation of conductor circuit portion (outer shape pattern) corresponding to inner layer of lead frame Create a metal structure portion as a core. The lead frame is die pressed or etched to form the core portion of the conductor circuit.
In addition, the metal column irregularities are further formed by etching if necessary.
2) Polishing and roughening of the lead frame structure 3) Filling the lead frame structure with heat-resistant resin (printing or laminating heat press)
It is selected from thermosetting or thermoplastic resin.
4) Lead frame structure surface layer part is polished with ceramic buff, upper and lower surfaces, roughening process 5) Electroless copper plating ⇒ Electrolytic copper plating process, etc. Surface panel full surface plating, etc. 6) Photosensitive for forming outer layer wiring circuit Etching resist (or photosensitive dry film etching resist) process 7) Exposure process to photosensitive etching resist or dry film 8) Development process 9) Copper etching process for wiring circuit formation 10) Solder resist forming process 11) Nickel (Ni) plating and gold (Au) plating process, etc. 12) Dividing the lead frame into pieces by V-cut, router, laser cut or die press

According to the present invention, it is possible to provide a high power device module excellent in large current, high heat resistance, and high heat dissipation. In addition, the conductor circuit of the high-current wiring and fine control wiring can be freely wired on the front and back including the metal connection of the saddle structure. In addition, metal structures can be arbitrarily arranged as necessary, and structural design for stress relaxation due to heat, etc. can be performed, and wiring module substrate manufacturing can be performed in a short process. Suitable for production.

Conventional and next-generation power device modules can also be miniaturized due to high performance, and can perform a large-size, multi-sided substrate manufacturing process, so that productivity can be easily increased.
High heat resistant resins (180 ° C or higher) are required for next-generation power semiconductors, etc. By selecting these resins, high current wiring modules that can directly mount optimal power devices with excellent impact resistance and environmental resistance Can be provided.

Outline plan view of power device module Cross-sectional illustration of power device module Plan view of conductor circuit and mounting example of power device module Cross-sectional explanatory drawing of power device module (3-layer structure and integrated view) Cross-sectional explanatory drawing of power device module (metal pillar structure diagram)

1: Lead frame material 2: High current or heat dissipation conductor circuit 3: Surface layer conductor circuit 4: Inner layer conductor circuit 5: High heat resistance resin (thermoplastic or thermosetting)
6: Capacitor (mounted component)
7: Resistance (mounted parts)
8: Source / gate electrode 9: Heat sink (aluminum, etc.)
10: Power device (SiC) semiconductor, etc. 11: Metal block 12: Collector electrode 13: Metal plate (copper)
14: Metal pillar

Examples and manufacturing methods will be described below based on the drawings, symbols, and the like.
FIG. 1 in the embodiment represents an example of a plan view of a power device module as viewed from above.
In this plan view, conductor circuits, pads, and the like are seen, and the conductors are formed of an insulating material made of a high heat-resistant resin 5 that can withstand 180 ° C. or more. This high heat resistant resin 5 can be selected from either thermosetting or thermoplastic, and is mainly novolak type, imidazole type epoxy, phenols, PEEK (polyether ether ketone), LCP (liquid crystal polymer), polyimide, polyamideimide, Super engineering plastics, cyanates, BT resins, and other heat resistant polymer materials can be selected, and materials having high heat resistance, insulation, and high voltage resistance can be used.
The distance between the wiring conductors and the pad shape (pattern) are designed and arranged in consideration of the specifications of each power device module, the creepage distance that can withstand the withstand voltage, and the like. Usually, the side where the power device is mounted is often equipped with a heat sink for high heat dissipation, but the front and back are thermally coupled (approximately 390 W) by metal bonding directly through the lead frame (metal structure). / MK), a structure in which a good heat radiation operation is performed can be taken, and the heating portion can be reduced from becoming high temperature.

As the lead frame material, various alloys, oxygen-free copper (symbol: C1020), tough pitch copper (symbol: C1100), and the like can be selected. For example, the thickness can be 200 μm to 500 μm and can handle a large current. For next-generation power semiconductors and the like, it is about 500 μm to 1 mm, and can be arbitrarily set according to the amount of current and module specifications. Therefore, it is possible to optimize by selecting a metal material, a thickness, etc. in consideration of design such as workability, electrical conductivity, current capacity, wiring, pad pattern and the like.

As a method of forming a conductor circuit of the lead frame material, there are formation by etching, punching by a die press, and the like, and the preferred one can be selected from the viewpoint of pattern identity and productivity.
In the case of a die press, since burrs or the like are likely to occur, it is necessary to perform mechanical polishing or chemical polishing before resin filling to remove the burrs in advance and smooth the surface.
For mechanical polishing, a ceramic buff or the like can be used to move and flatten the lead frame along the top and bottom surfaces. After polishing, the lead frame structure is roughened in advance by chemical polishing or the like in order to increase the adhesion with the high heat resistant resin.

There are the following two methods for filling the heat-resistant resin into the lead frame structure in which the conductor circuit is formed.
One is a method of filling a thermosetting resin. In the case of an ink-like resin, it is softened and defoamed at a high temperature, and vacuum filling or the like is performed using a metal mask or a silk screen printing method using a squeegee. Harden.
For thermosetting resins, select from a variety of high heat resistant resins such as high heat resistant novolak type epoxy resin, imidazole type epoxy resin, PEEK, cyanate resin, etc. Can provide high-performance device modules.
The other is a thermoplastic resin filling method. For LCP (liquid crystal polymer) or the like, a heat-resistant resin sheet is laminated and hot-pressed at a high temperature (300 ° C. or higher), and an insulating layer is laminated and sealed between lead frames. As a resin molding method, injection molding or transfer molding is generally used.

When using a sheet-like prepreg material, a heat-resistant insulating resin sheet is laid up on a lead frame material that has been formed into a conductor circuit, which becomes the base of the lead frame structure, and a cushioning material having releasability above and below it Are preferably sandwiched between press plates (SUS plates). A release paper such as a cushioning material is placed between a hot press hot plate and a press plate such as a SUS plate so as to prevent dents and make the pressing pressure uniform.

After the layup, lamination by hot pressing is performed according to the temperature profile selected by the resin, and the result is the lamination shown in FIG. 4 (a) (b) or FIG. 5 (a) (b). A body structure can be obtained.
As an example, the curing temperature for the thermosetting resin by hot pressing is in the range of 160 ° C. to 180 ° C. and the pressure is suitably 2 MPa to 5 MPa, but the temperature of the thermoplastic resin often requires 300 ° C. or more.

These heat-resistant resins as the insulating layer can be either thermosetting or thermoplastic, and are mainly novolak type, imidazole type epoxy, phenols, PEEK (polyether ether ketone), LCP (liquid crystal polymer), polyimide, Polyamideimide, super engineering plastic, cyanate, BT resin and other heat-resistant polymer materials can be selected, and materials with high heat resistance, insulation, and high voltage resistance can be used. Optimize the temperature profile.

Whichever heat resistant resin is used, if the resin adheres to the lead frame surface, surface polishing is performed with a ceramic buff or the like, and the resin is flattened to completely remove the resin on the upper surface of the lead frame.
Thereafter, when copper plating such as panel plating is performed, the resin surface is roughened or modified in advance by mechanical polishing, chemical polishing, light polishing or the like in order to ensure adhesion strength.

A lead frame structure substrate filled with a high heat resistant resin and having a smooth surface is added with a palladium catalyst, and electroless copper plating and electrolytic copper plating (panel plating, etc.) are performed on the entire surface.
The module is checked to make sure that the large-sized panel plating surface with multiple faces is flat and smooth, and then the surface is flattened and smoothed by mechanical polishing, chemical polishing, etc. in order to form a conductor circuit.

In order to form a smoothed outer layer conductor circuit, a photosensitive liquid etching resist or a dry film etching resist is laminated, and an exposure process is performed in accordance with a wiring pattern film or the like. Usually, the necessary part of wiring is hardened with resist by exposure, and the unexposed part without wiring is left as it is.

The lead frame substrate on which the surface layer portion (outer layer) is exposed is subjected to a development process for forming a conductor circuit with an aqueous sodium carbonate solution.
Since the exposed portion can harden the resist and leave the wiring portion, etching is performed with a ferric chloride or cupric chloride solution to remove the metal portion other than the exposed portion.
After the etching, the remaining photosensitive resist or the like is peeled off with a sodium hydroxide aqueous solution, washed and dried to form a conductor circuit.

After forming the outer-layer conductor circuit, surface treatment is performed after applying a solder resist or the like.
The surface treatment is performed on a metal conductor with a surface treatment specification suitable for mounting a power device such as nickel (Ni) plating or gold (Au) plating. For example, in the case of bonding and mounting a semiconductor element such as Au—Sn eutectic, gold plating is a preferable surface treatment.

Since each power device module (conductor circuit, etc.) is impressed on the board, the outer shape is processed into individual pieces with a press die, V-cut, router, laser, etc., according to the design specifications. Thus, the lead frame conductor wiring circuit portion and the other frame portions can be separated.

(Module structure, features, and detailed explanation)
FIG. 2 in the embodiment is an example of a cross-sectional view taken along the line AA ′ in FIG. Detailed explanations such as structural drawings, features, and manufacturing methods thereof are as follows.
A metal plate that becomes the core of the lead frame substrate is filled with a high heat-resistant resin 5, conductor circuit wiring, pads, and the like are formed on the front and back, and electrically connected to the lead frame such as the heat dissipation metal body 2 and the conductor circuit 3 ( It can be arbitrarily disposed on the front and back surfaces and the inner layer.
Therefore, the conductor wiring can be freely wired using the upper and lower outer layer surfaces and the loose part that becomes the core, and the heat dissipating metal 2 is also separated and insulated from the electric circuit etc., and is directly metallized directly below or directly above the heat generating part. Therefore, it is possible to easily design a structure that can obtain further high heat dissipation.
Large current or heat-dissipating conductor circuit 2 and control conductor circuit 3 are joined to the base of the lead frame by an outer layer portion and copper plating, and conductor circuit 4 is free as a wiring circuit such as a surface layer portion and a back surface junction, and a surface layer portion and an inner layer junction. Can be provided.
The lead frame part and the filling resin increase the adhesion strength, and the parts that are metal-bonded to the front and back are set slightly wider than the front and back pads and the inner conductor part, so that the heat-resistant resin of the insulating layer and the metal part that constitutes the collar Can be firmly fixed.

FIG. 3 in the embodiment shows an example of a plan view in the case of mounting the resistor 7, the capacitor 6, the power device 10, and the like which are mounted components in addition to the description of FIG. 1. 4A and 4B are cross-sectional views taken along line AA ′. On the upper side, a resistor 7, a capacitor 6, and a source / gate electrode 8 are arranged as electronic components, and on the lower side, a power device. Since the unit 10 generates the highest heat, it is an example of a model in which the heat sink 9 and the like are mounted via the metal plate 13. Usually, the metal plate 13 and the heat radiating heat sink 9 are firmly fixed with a heat radiating sheet, a heat radiating adhesive or the like.
The difference between FIG. 4A and FIG. 4B is that the conductor circuit between the capacitor 6 and the resistor 7 is routed through the conductor pattern on the back surface (b), and the conductor circuit is arranged closer (a). Represents the difference in the cross-sectional structure.

Since a conductor circuit (metal part) through which a large current flows uses a lead frame, thermal resistance, power loss, and the like can be reduced by increasing the pattern thickness and pattern width of the inner layer according to specifications.
Further, in the embodiment, power device parts with high heat generation are mounted on the heat sink side 9, and capacitors 6, resistors 7, integrated circuits, etc. of the electronic parts are distributed and mounted on the opposite (back side) side, so that the temperature cycle condition Even in a severe environment, it is possible to prevent and reduce solder cracks caused by heat between components to be mounted.

Since the outer-layer conductor pad portion and the inner-layer lead frame portion connected to the outer-layer conductor pad portion are metal-bonded, there is no problem in long-term reliability in a large temperature cycle, thermal expansion, etc., and a power device module with high connection reliability is provided. be able to.
In addition, there is a feature that it can be arbitrarily designed and set according to product specifications such as pad size and shape of the outer layer conductor circuit portion.

5 (a) and 5 (b) in the embodiment, in order to alleviate the thermal effect of the portion with the highest heat generation, the SiC semiconductor 10 portion directly contacting the power device with the large heat generation has a metal column heat dissipation structure. A cross-sectional view is shown.
4 (a) and 4 (b), in order to reduce the influence of heat on the heat-generating component, a metal body 14 having a column structure is used between the capacitor 6, resistor 7 and heat sink 9 of the upper mounting component. To reduce the effects of heat. In the case where a metal column is formed on the lower side on which the thermal component is mounted in order to perform thermal relaxation or the like, the lower side of the lead frame is etched as shown in the figure when the tower portion is formed. The size, arrangement, quantity, and height of the metal pillars can be arbitrarily designed and formed according to product specifications. Although it affects the thickness of the lead frame at the core portion as a core, as an example, the height of the metal column portion is 0.2 mm to 0.6 mm, but it is preferable to design and evaluate in advance by thermal simulation.

The material of the heat sink 9 is preferably aluminum or copper. Aluminum has a lower thermal conductivity than copper, but is suitable for light weight, small size, and low cost.
The large current passes through the source electrode / gate electrode 8 and the collector electrode 12, and the power device portion is at the highest temperature, so that the contacted portion has the metal pillar structure 14. Since the height, thickness, quantity, shape, etc. of the metal pillar can be set arbitrarily, it is possible to provide an optimum structure.
In addition, a metal pillar structure can be provided on the component mounting side on the capacitor 6 side and the resistor 7 side corresponding to the upper part of the sectional view.

Usually, when using a thermosetting type heat-resistant resin, it is filled with a squeegee using a screen mesh or a metal mask after defoaming. Alternatively, filling is performed using vacuum printing, and semi-curing is performed at a high temperature, followed by post-curing and heat-curing at a high temperature.
In the case of a sheet-like prepreg, a heat-resistant insulating resin sheet is laid up on a lead frame material with an external pattern that becomes the base of a lead frame substrate, and a cushioning material having releasability is placed above and below the press plate. It is preferable to sandwich it with (SUS plate). A release paper such as a cushioning material is placed between a hot press hot plate and a press plate such as a SUS plate so as to prevent dents and make the pressing force uniform.
After the lay-up, lamination by hot pressing is performed according to the temperature profile selected by the resin, and the results are shown in FIG. 4 (a) (b) or FIG. 5 (a) (b). A laminated body having a structure can be obtained.

As an example, when using a thermoplastic heat-resistant resin LCP, the sheet-shaped resin was subjected to laminating hot press with a hot platen (OPA, 260 ° C. for 15 minutes), (5 MPa, 300 ° C. At 30 ° C. after 30 minutes). Heat resistant resin LCP (Liquid Crystal Polymer) is available in grades with the same thermal expansion coefficient (18 ppm / ° C) as copper, with excellent chemical resistance, heat resistance, and mechanical strength. It can be applied to filling as an insulating layer of a power device module having a laminated structure with a lead frame thickness of about 1 mm.

In order to flatten the substrate surface, as an example, the surface of the substrate after application of the heat resistant resin is polished with a ceramic buff or the like (conveyor speed: about 1 m / min) including the lead frame material. By polishing until the lead frame surface is exposed on the surface, the substrate surface is flattened and smoothed. In order to increase the adhesion strength, the surface is roughened and modified as described above.

A plating catalyst such as palladium is attached to the module substrate whose surface layer portion is flattened, and the surface is uniformly plated from 20 μm to 50 μm, for example, by a combination of electroless plating and electrolytic plating.
In electroless plating, a plating solution such as copper or nickel is used. Thereafter, in FIG. 4 and FIG. 5, a large current conductor circuit 2, a through conductor circuit 3, and a conductor circuit 4 are formed by copper etching. Therefore, copper is preferable.
After the entire surface is subjected to electrolytic copper plating, a photosensitive etching resist or the like is laminated, and exposure, development, and etching are performed according to the pattern shape of the conductor circuits 2, 3, and 4.
After etching, the remaining dry film etching resist or the like is peeled off with an aqueous sodium hydroxide solution, and then washed and dried to form a conductor circuit.

A solder resist is applied to the conductor circuit surface, and the surface treatment after the conductor circuit formation is performed by plating according to the specification. As the surface treatment, a surface treatment specification which is usually applied with nickel (Ni) plating, gold (Au) plating or the like and suitable for mounting and mounting a power device is preferable.

Due to the structure in which the conductor circuit part and the lead frame are integrally formed by metal bonding, a large current, a heat radiating conductor circuit, etc. can be brought into close contact with the insulating resin at a predetermined position as shown in FIG. it can.
The peripheral portion of the lead frame frame is subjected to outer shape processing for individualization in a subsequent process. It shows in FIG. 1 after external shape processing. As an example, finishing is performed by external processing such as die press punching, V cut, router, and laser cut.

The power device module manufactured by the above-mentioned embodiment is a metal structure (耐 え る) that can withstand the heat generated by the control conductor (fine) circuit and the high-current conductor circuit with increased conductor thickness by manufacturing the power device module. In addition, it is possible to provide a power device module that mounts package parts and the like to improve heat dissipation and diffusibility, and solves problems suitable for extending the life, compactness, and weight of parts.

Claims (6)

The lead frame core is filled with high heat-resistant insulating resin, and the front and back conductor circuits and the lead frame are high current, high heat dissipation power device modules characterized by metal bonding. A power device module with an optimized metal structure (櫓) with three or more layers on the same surface. The power device module according to claim 1, wherein the lead frame is a copper plate containing tough pitch copper, oxygen-free copper, or another alloy. The power device module according to claim 1, wherein the high heat-resistant insulating resin to be filled includes a sheet-shaped resin or a solid resin that is softened and filled, and includes an insulating resin having thermosetting property and thermoplasticity. 2. The power device module according to claim 1, wherein the lead frame having a conductor circuit is further etched to have a three-layer structure (櫓) in which metal pillars are arranged. A method for manufacturing the power device module according to claim 1. The power device module according to claim 1, further comprising a built-in component (L: coil, C: capacitor, R: resistor, IC: integrated circuit).

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