JP2014029000A - Vapor deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus that enables a vaporization source to reciprocate between two deposition regions and to linearly reciprocate in each deposition region without using a guide member such as a linear guide in a vapor deposition chamber.SOLUTION: A vapor deposition apparatus has a linear vaporization source 5 in a vapor deposition chamber 4 in which a first vapor deposition region 2 for vapor deposition of a substrate and a second vapor deposition region 3 for vapor deposition of another substrate are located side by side, wherein the linear vaporization source 5 is horizontally movable parallel to the vapor deposition surface of the substrate in the first vapor deposition region 2 or the other substrate in the second vapor deposition region 3. A plurality of link mechanisms formed by rotatably connecting a plurality of links 6 are installed in the vapor deposition chamber 4, wherein a plurality of the link mechanisms support the linear vaporization source 5 horizontally movably. Each link mechanism is provided with its own drive mechanism.

Description

  The present invention relates to a vapor deposition apparatus.

  In order to suppress deterioration of the organic material during vapor deposition and maintain a stable film quality, the organic material is always heated and evaporated in the OLED production line. For this reason, since the material continues to evaporate while the substrate is carried in or out of the vapor deposition chamber and the pre-deposition process of the substrate is performed, the material is wasted. In addition, there is a problem that during the pre-deposition process, the deposition process cannot be performed, and the tact time increases.

  In order to eliminate such waste of materials and increase in tact time, techniques such as those disclosed in Patent Documents 1 and 2 have been proposed.

  Specifically, Patent Document 1 proposes a structure in which a deposition source moves between a plurality of deposition chambers and another substrate is deposited in another deposition chamber while a certain substrate is carried in or out. Yes. In Patent Document 2, an evaporation source that rotates between a first substrate evaporation region and a second substrate evaporation region in the evaporation chamber is provided in the evaporation chamber, and the second is performed while evaporation is performed on one substrate in the first substrate evaporation region. In the substrate deposition region, a structure for performing a pre-deposition process on the other substrate has been proposed.

JP 2006-2226 A JP 2011-68980 A

  By the way, in each of Patent Documents 1 and 2, a guide member such as a linear guide is used in the vapor deposition chamber, and there is a concern that the vapor deposition chamber may be contaminated by the generation of particles and degas from the guide member.

  The present invention has been made in view of the above-described situation, and without using a guide member such as a linear guide in the vapor deposition chamber, the evaporation source is moved back and forth between the two vapor deposition regions and within each vapor deposition region. An evaporation apparatus capable of reciprocating linear motion is provided.

  The gist of the present invention will be described with reference to the accompanying drawings.

  Linear evaporation in which a deposition material is attached to the deposition surface of the substrate 1 in a deposition chamber 4 in which a first deposition region 2 for depositing one substrate 1 and a second deposition region 3 for depositing another substrate 1 are arranged in parallel. A source 5 is provided, and the linear evaporation source 5 can be horizontally moved in parallel with the deposition surface with respect to the one substrate 1 in the first deposition region 2 or the other substrate 1 in the second deposition region 3. In this vapor deposition apparatus, a plurality of link mechanisms each having a plurality of links 6 rotatably connected to the vapor deposition chamber 4 are arranged side by side, and the linear evaporation source 5 can be horizontally moved by the plurality of link mechanisms. Each link mechanism is provided with a drive mechanism configured to support the plurality of link mechanisms, and the link mechanisms that are independently driven and controlled cooperate to horizontally move the linear evaporation source 5. Thus, the linear evaporation source 5 is connected to the first steam. The first deposition area 2 and the second deposition area 3 are configured to be movable along the deposition surface of the other substrate 1 in the one substrate 1 and the second deposition area 3 in the area 2. The present invention relates to a vapor deposition apparatus characterized in that it can be switched between and moved.

  Further, each of the link mechanisms is configured such that a plurality of the links 6 are rotatably connected to bend and open in a direction parallel to the deposition surface of the substrate 1, and the bending opening and closing degree of each of the link mechanisms is driven. The linear evaporation source 5 can be moved along the deposition surface of the one substrate 1 in the first vapor deposition region 2 and the other substrate 1 in the second vapor deposition region 3 by being controlled by a mechanism. 2. The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus is configured to switch between the first vapor deposition region 2 and the second vapor deposition region 3.

  Moreover, the said drive mechanism is provided in air | atmosphere, It concerns on the vapor deposition apparatus of any one of Claim 1, 2 characterized by the above-mentioned.

  Further, the linear evaporation source 5 is horizontally moved to dispose the linear evaporation source 5 in the first vapor deposition region 2, and the linear evaporation source 5 is moved along the deposition surface of the substrate 1 to be first. While vapor deposition is performed on the first substrate 1, a pre-deposition process is performed on the second substrate 1 carried into the second vapor deposition region 3, and vapor deposition on the first substrate 1 is completed in the first vapor deposition region 2. Then, the linear evaporation source 5 is switched and moved to the second deposition region 3, the linear evaporation source 5 is disposed in the second deposition region 3, and the linear evaporation source 5 is moved along the deposition surface of the substrate 1. The first substrate 1 is unloaded in the first vapor deposition zone 2 and a new third substrate 1 is placed in the first vapor deposition zone. Carrying in and carrying out the pre-deposition process, and repeating this, the first deposition region 2 and the second deposition are always performed. In either pass third those of the vapor deposition apparatus according to any one of claims 1 to 3, characterized by being configured so as to deposited on the substrate 1.

  Further, a plurality of vapor deposition chambers 4 having the first vapor deposition region 2 and the second vapor deposition region 3 are connected to a substrate conveyance chamber 13 having a substrate conveyance mechanism for conveying the substrate 1 to the vapor deposition chamber 4, and the substrate conveyance The substrate 1 loaded into the chamber 13 is configured so that the substrate transport mechanism appropriately distributes the respective substrates 1 to the respective deposition regions of the deposition chamber 4, and one substrate transport chamber 13 is configured to be shared by a plurality of deposition chambers 4. It concerns on the vapor deposition apparatus of any one of Claims 1-4 characterized by the above-mentioned.

  Since the present invention is configured as described above, the evaporation source can be reciprocated between the two vapor deposition zones and reciprocating linearly moved within each vapor deposition zone without using a guide member such as a linear guide in the vapor deposition chamber. It becomes a simple vapor deposition apparatus.

It is a schematic explanatory top view of the principal part of a present Example. It is a schematic explanatory side view of the principal part of a present Example. It is vapor deposition process explanatory drawing of a present Example. It is vapor deposition process explanatory drawing of a present Example. It is vapor deposition process explanatory drawing of a present Example. It is vapor deposition process explanatory drawing of a present Example. It is a schematic explanatory plan view of the principal part of another example. It is a schematic explanatory side view of the principal part of another example. It is vapor deposition process explanatory drawing of another example. It is vapor deposition process explanatory drawing of another example. It is vapor deposition process explanatory drawing of another example. It is vapor deposition process explanatory drawing of another example. It is arrangement | positioning block diagram of a vacuum chamber. It is arrangement | positioning block diagram of a vacuum chamber. It is arrangement | positioning block diagram of a vacuum chamber. It is arrangement | positioning block diagram of a vacuum chamber. It is a schematic explanatory top view of the principal part of a structural example. It is a schematic explanatory side view of the principal part of a structural example. It is vapor deposition process explanatory drawing of a structural example. It is vapor deposition process explanatory drawing of a structural example. It is vapor deposition process explanatory drawing of a structural example. It is vapor deposition process explanatory drawing of a structural example.

  An embodiment of the present invention which is considered to be suitable will be briefly described with reference to the drawings showing the operation of the present invention.

  A plurality of link mechanisms that support the linear evaporation source 5 are driven and controlled so that the linear evaporation source 5 is positioned in the first vapor deposition region 2 or the second vapor deposition region 3, and one substrate 1 of the first vapor deposition region 2 is formed. The deposition material is deposited on one substrate 1 by being moved along the deposition surface.

  At this time, the linear evaporation source 5 that has finished vapor deposition in the first vapor deposition region 2 or the second vapor deposition region 3 is switched and moved to the second vapor deposition region 3 or the first vapor deposition region 2 by a plurality of link mechanisms. As described above, the deposition material can be deposited on the other substrate 1 of the second deposition region 3, and the deposition can be continued in the opposite deposition region.

  That is, for example, the linear evaporation source 5 is disposed in the first vapor deposition region 2, and the linear evaporation source 5 is moved along the deposition surface of the substrate 1 to deposit on the first substrate 1. In the meantime, a pre-deposition process is performed on the second substrate 1 carried into the second vapor deposition region 3, and when the vapor deposition on the first substrate 1 is completed in the first vapor deposition region 2, the linear evaporation source 5 is set to The second evaporation region 3 is switched and moved, the linear evaporation source 5 is disposed in the second evaporation region 3, and the linear evaporation source 5 is moved along the evaporation surface of the substrate 1 to move the second evaporation region 3 to the second evaporation region 3. Deposition on the substrate 1 is started, and the first substrate 1 is unloaded in the first vapor deposition zone 2 during that time, and a new third substrate 1 is loaded in the first vapor deposition zone to perform a pre-deposition process. By repeating this, the substrate 1 is always in one of the first vapor deposition region 2 and the second vapor deposition region 3. It is possible to deposit.

  Therefore, it is possible to deposit on the other substrate 1 during the time when the substrate 1 is carried into and out of the deposition chamber 4 and during the pre-deposition process (for example, alignment) between the substrate 1 and the mask. It can be reduced.

  In addition, since the actuator that drives the link mechanism can be installed in the atmosphere, for example, outside the vapor deposition chamber 4, maintenance of the apparatus and replacement of the actuator are easier than when the actuator is installed inside the vapor deposition chamber. .

  In addition, since the power for moving the linear evaporation source 5 is transmitted only by a rotational motion and does not use a linear guide or an arc guide, generation of particles and degas is suppressed, and a clean vacuum inside the deposition chamber can be maintained. It will be possible.

  Specific embodiments of the present invention will be described with reference to the drawings.

  In this embodiment, a vapor deposition material is deposited on the surface of the substrate 1 in a vapor deposition chamber 4 in which a first vapor deposition region 2 for vapor deposition of one substrate 1 and a second vapor deposition region 3 for vapor deposition of another substrate 1 are arranged side by side. The linear evaporation source 5 is attached to the first vapor deposition region 2 and the other substrate 1 in the second vapor deposition region 3 is parallel to the deposition surface. The vapor deposition apparatus is configured to be horizontally movable, and without using a guide member such as a linear guide in the vapor deposition chamber 4, the evaporation source is moved back and forth between the two vapor deposition areas and the straight line within each vapor deposition area. Exercise is possible.

  Specifically, in this embodiment, a plurality of link mechanisms each including a plurality of links 6 rotatably connected to the vapor deposition chamber 4 are arranged side by side, and the linear evaporation source 5 is horizontally moved by the plurality of link mechanisms. Each link mechanism is provided with a drive mechanism configured to freely support and driving the plurality of link mechanisms. Then, the linear evaporation sources 5 are horizontally moved in cooperation with the link mechanisms that are driven and controlled independently of each other, so that the linear evaporation sources 5 are connected to the one substrate 1 and the first deposition region 2. The second deposition region 3 is configured to be movable along the deposition surface of the other substrate 1 and is configured to be able to switch between the first deposition region 2 and the second deposition region 3. doing.

  More specifically, in this embodiment, as shown in FIGS. 1 and 2, the linear evaporation source 5 is rotatable to the other end side of the link mechanism whose one end side is connected to the rotating shaft 8 of the drive mechanism. It is connected, and each link mechanism is driven and controlled by a drive mechanism, and the linear evaporation source 5 is moved in an arbitrary horizontal direction, for example, reciprocating between the first and second deposition regions 2 and 3. is there.

  That is, in this embodiment, the linear evaporation source 5 can be moved in the long side direction or the short side direction of the substrate 1 by the cooperation of a plurality of link mechanisms, and vapor deposition can be performed on substantially the entire surface of the substrate 1 to be deposited. In this case, vapor deposition can be performed alternately on two substrates 1 and 1 in the same vapor deposition chamber 4. In the figure, reference numeral 7 is a joint portion for connecting the links 6 to each other and the link 6 and the linear evaporation source 5 so as to be rotatable, and 11 is a gate valve.

  Each part will be specifically described.

  The vapor deposition chamber 4 is a vacuum chamber having an appropriate exhaust mechanism such as a vacuum pump, and is connected to a substrate transfer chamber 13 having a robot hand 14 as a substrate transfer mechanism through a gate valve 11 which is an opening / closing mechanism. (See FIGS. 19 to 22). In the present embodiment, one gate valve 11 is provided on each of the first vapor deposition region 2 side and the second vapor deposition region 3 side, corresponding to the first vapor deposition region 2 and the second vapor deposition region 3. ing.

  The first vapor deposition region 2 and the second vapor deposition region 3 are not clearly separated physically, but the first vapor deposition region 2 in which one substrate 1 is disposed on the left side in the vapor deposition chamber 4 and the right side. A second vapor deposition region 3 on which another substrate 1 is disposed is provided (see, for example, FIG. 1).

  Specifically, the first vapor deposition is performed so that one substrate 1 and the other substrate 1 are arranged in parallel at a predetermined interval so as not to be affected when vapor deposition is performed in another region. Region 2 and second vapor deposition region 3 are set.

  In the vapor deposition chamber 4, the substrate 1 is disposed on the top surface side of the vapor deposition chamber 4, and the linear evaporation source 5 and the link mechanism are disposed on the bottom surface side of the vapor deposition chamber 4.

  The linear evaporation source 5 is a general line source for attaching a deposition material to the deposition surface of the substrate 1. In this embodiment, the linear evaporation source 5 has an elongated pivot shape, and a linear and slit-like vapor deposition port 12 extending in the longitudinal direction of the pivot shape is provided on the upper surface thereof. The vapor deposition material is discharged from the vapor deposition port 12 toward the vapor deposition surface of the substrate 1. The shape of the vapor deposition port 12 is not limited to the slit shape, and a plurality of circular or square vapor deposition ports may be arranged in a straight line.

  In this embodiment, the linear evaporation source 5 is moved along the long side direction of the substrate 1 (in the vertical direction in FIG. 1) in a state where the vapor deposition port 12 is orthogonal to the long side direction of the substrate 1. doing. The vapor deposition port 12 of the linear evaporation source 5 is set to a length that allows the vapor deposition material to adhere to substantially the entire region in the short side direction of the substrate 1.

  Therefore, the substrate is disposed in the first vapor deposition region 2 or the second vapor deposition region 3 by the link mechanism, and the vapor deposition material is vapor deposited on the substrate 1 while moving the linear evaporation source 5 along the long side direction of the substrate 1. The film can be formed on substantially the entire surface of 1.

  In the present embodiment, each link mechanism is configured so that two metal plate-like links 6 are connected so as to be rotatable relative to each other and bent and opened in a direction parallel to the vapor deposition surface of the substrate 1. One end side of this link mechanism is connected to a rotating shaft 8 of a drive mechanism provided on the bottom surface side of the vapor deposition chamber 4, and the other end side is freely rotatable to a surface facing the bottom surface of the vapor deposition chamber 4 which is the lower surface of the linear evaporation source 5. It is connected.

  Further, in this embodiment, the structure is provided with three link mechanisms, and the rotation shafts 8 of the respective drive mechanisms connected to one end side of each link mechanism are arranged so as to be positioned at the apexes of the triangle. Yes. Specifically, the rotation shaft 8 of each drive mechanism is connected to the lower left corner of the first vapor deposition region 2, the lower right corner of the second vapor deposition region 3, the first vapor deposition region 2, and the second in FIG. 1. It arrange | positions so that it may be located in the upper end side of the boundary part between the vapor deposition area | regions 3. FIG. Further, the other end side of each link mechanism is disposed at each vertex of the triangle on the lower surface of the linear evaporation source 5.

  The drive mechanism is configured such that the motor body 9 is disposed outside the vapor deposition chamber 4 and the link 6 side of the rotating shaft 8 is disposed inside the vapor deposition chamber 4. An insertion hole provided in the bottom surface of the vapor deposition chamber 4 through which the rotary shaft 8 is inserted is appropriately sealed.

  Therefore, the opening and closing of the link 6 can be controlled according to the rotation amount of the rotating shaft 8 of the drive mechanism, and the linear evaporation source 5 is connected to the vapor deposition chamber 4 by bending the links 6 of the link mechanism so as to be closed. The linear evaporation source 5 can be pushed away from the connection point with the vapor deposition chamber by pulling in the point side and extending so that the links 6 are opened. The linear evaporation source 5 can be moved horizontally by combining the pulling-in and pushing operations of the linear evaporation source 5 by the link mechanism.

  Therefore, in the present embodiment, it is possible to perform vapor deposition as follows.

  That is, the linear evaporation source 5 is disposed in the first vapor deposition region 2 by the cooperation of each link mechanism, and the linear evaporation source 5 is moved along the long side direction (or short side direction) of the substrate 1. While depositing on the first substrate 1, the second substrate 1 is carried into the second deposition region 3 (see FIG. 3), and a pre-deposition step is performed on the loaded second substrate 1. Perform (see FIG. 4). Subsequently, when vapor deposition on the first substrate 1 is completed in the first vapor deposition region 2, the linear evaporation source 5 is switched to the second vapor deposition region 3, and the linear vaporization source is moved to the second vapor deposition region 3. 5, and this linear evaporation source 5 is moved along the long side direction (or short side direction) of the substrate 1 to start vapor deposition on the second substrate 1, during which the first vapor deposition is performed. In the region 2, the first substrate 1 is unloaded (see FIG. 5). Subsequently, a new third substrate 1 is carried into the first vapor deposition region and a vapor deposition pre-process is performed (see FIG. 6). In this way, by repeating the above process, it is possible to always deposit on the substrate 1 in either the first deposition region 2 or the second deposition region 3.

  In this embodiment, the vapor deposition on the substrate 1 is configured to be completed by reciprocating the linear evaporation source 5 in the long side direction of the substrate 1 once, for example. Accordingly, the vapor deposition material is wasted only when the linear evaporation source 5 is switched and the vapor deposition material can be used very efficiently.

  The pre-deposition process for the substrate 1 is a preparatory process performed from when the substrate 1 is carried into the deposition chamber 4 until the deposition is started, such as an alignment process between the metal mask and the substrate 1.

  In the present embodiment, the case where three link mechanisms are used as described above has been described. However, a configuration using two link mechanisms may be used as in the other examples illustrated in FIGS. . In this alternative example, a link mechanism including two links 6 is used, but the links 6 of one link mechanism A are connected to each other via an actuator 10. That is, the link mechanism A of FIG. 7 can rotate one link 6 by the rotating shaft 8 and can also rotate the other link 6 by the actuator 10 at the tip of the one link 6. The amount of freedom is increased to increase the degree of freedom. In this other example, in order to keep the motor built in the actuator 10 in the air atmosphere, the link 6 and the rotary shaft 8 are made hollow, and a vacuum seal is arranged at a rotating portion from the joint portion 10 to the motor body 9. Yes.

  Therefore, also in the case of this other example, it becomes possible to perform vapor deposition as follows similarly to this example.

  That is, the linear evaporation source 5 is disposed in the first vapor deposition region 2 by the cooperation of each link mechanism, and the linear evaporation source 5 is moved along the long side direction (or short side direction) of the substrate 1. While depositing on the first substrate 1, the second substrate 1 is carried into the second deposition region 3 (see FIG. 9), and a pre-deposition process is performed on the second substrate 1 carried in. Perform (see FIG. 10). Subsequently, when vapor deposition on the first substrate 1 is completed in the first vapor deposition region 2, the linear evaporation source 5 is switched to the second vapor deposition region 3, and the linear vaporization source is moved to the second vapor deposition region 3. 5 is disposed, and the first substrate 1 is carried out in the first vapor deposition zone 2 (see FIG. 11). Subsequently, the linear evaporation source 5 is moved along the long side direction (or the short side direction) of the substrate 1 to start vapor deposition on the second substrate 1. A third substrate 1 is carried in and a pre-deposition process is performed (see FIG. 12). In this way, by repeating the above process, it is possible to always deposit on the substrate 1 in either the first deposition region 2 or the second deposition region 3.

  Further, in this embodiment, the first deposition region 2 and the second deposition region 3 are deposited in a substrate transport chamber 13 having a robot hand 14 as a substrate transport mechanism for transporting the substrate 1 to the deposition chamber 4. A plurality of (for example, two) chambers 4 are connected, and the substrate 1 loaded into the substrate transfer chamber 13 is appropriately distributed to each deposition region of the deposition chamber 4 by one substrate. The transfer chamber 13 is configured to be shared by the plurality of vapor deposition chambers 4. The substrate transfer chamber 13 is also provided with an appropriate exhaust mechanism.

  Around the substrate transfer chamber 13, not only the vapor deposition chamber 4 but also other vacuum chambers may be connected. For example, it can be configured as shown in FIGS. In the drawing, the trajectory for transporting the substrate is indicated by arrows as A line and B line. The A line and the B line are independent substrate transfer lines. Further, the polygonal shape of the substrate transfer chamber 13 can be set as appropriate according to the number of vacuum chambers to be connected. In the figure, 15 is a carry-in chamber, 16 is a carry-out chamber, 17, 18, 19 and 20 are new metal masks 21 or mask stock chambers where used metal masks 21 are stored. The mask in the vapor deposition chamber 4 and the mask in the mask stock chamber are appropriately exchanged by the robot hand 14. Further, the carry-in chamber 15 and the carry-out chamber 16 may be provided with a substrate rotation mechanism that appropriately rotates the direction of the substrate. Furthermore, not only the mask stock chamber but also other film forming chambers / processing chambers may be provided.

  Therefore, even when a certain vapor deposition chamber 4 is unavoidably stopped due to maintenance or trouble, the gate valve 11 provided between the vapor deposition chamber 4 and the substrate transfer chamber 13 is closed to connect to the same substrate transfer chamber 13. The other vapor deposition chamber 4 can continue to operate, and it is possible to suppress a decrease in the operation rate of the vapor deposition apparatus line at the time of maintenance or malfunction.

  17 to 22 show configuration examples that are not examples according to the present invention. In this configuration example, the linear evaporation source 55 can be reciprocally rotated between the first vapor deposition region 52 and the second vapor deposition region 53 of the vapor deposition chamber 54 using two parallel links 56, and the substrate 51 is The substrate is transported horizontally by the substrate transport mechanism 62. In this configuration example, one end of one link 56 is connected to a rotating shaft 58 of a motor main body 59 as a drive mechanism, the other end is connected to the lower surface of the linear evaporation source 55 so as to be rotatable, and the other link 56 is connected. One end portion of the evaporation chamber 54 is rotatably connected to the bottom surface of the vapor deposition chamber 54, and the other end portion is rotatably connected to the lower surface of the linear evaporation source 55. Accordingly, the other link 56 is also rotated in accordance with the rotation drive of one link 56, and the linear evaporation source 55 can be switched to the first vapor deposition region 52 and the second vapor deposition region 53.

  Therefore, in this configuration example, the vapor deposition is performed as follows.

  That is, the linear evaporation source 55 is disposed in the first vapor deposition region 52 by using the parallel link 56 and the substrate transport mechanism 62 (see FIG. 19), and the substrate 51 is moved with respect to the linear evaporation source 55. While the vapor deposition is performed on the first substrate 51 by moving along the long side direction (or the short side direction), a pre-deposition process is performed on the second substrate 51 carried into the second vapor deposition region 53 ( FIG. 20). Subsequently, when vapor deposition on the first substrate 51 is completed in the first vapor deposition region 52, the linear evaporation source 55 is switched to the second vapor deposition region 53, and the linear vapor deposition source is moved to the second vapor deposition region 53. 55 is disposed (see FIG. 21). Subsequently, the linear evaporation source 55 is moved along the long side direction (or short side direction) of the substrate 51 to start vapor deposition on the second substrate 51, and in the meantime, in the first vapor deposition region 52, The first substrate 51 is unloaded, and a new third substrate 51 is loaded into the first vapor deposition region 52 to perform a pre-deposition process (see FIG. 22). In this manner, by repeating the above process, it is possible to always deposit on the substrate 51 in either the first deposition region 52 or the second deposition region 53.

  Since the present embodiment is configured as described above, the evaporation source can be moved back and forth between the two vapor deposition regions and the reciprocating linear motion inside each vapor deposition region without using a guide member such as a linear guide in the vapor deposition chamber. It will be possible.

  Note that the present invention is not limited to this embodiment, and the specific configuration of each component can be designed as appropriate.

1 Substrate 2 First Deposition Area 3 Second Deposition Area 4 Deposition Chamber 5 Linear Evaporation Source 6 Link
13 Substrate transfer chamber

Claims (5)

  A linear evaporation source for attaching a deposition material to the deposition surface of the substrate is provided in a deposition chamber in which a first deposition region for depositing one substrate and a second deposition region for depositing another substrate are provided in parallel. An evaporation apparatus configured to horizontally move an evaporation source with respect to the one substrate in the first vapor deposition region or the other substrate in the second vapor deposition region in parallel with the vapor deposition surface. A plurality of link mechanisms formed by connecting a plurality of links in a freely rotatable manner are arranged in parallel, and the plurality of link mechanisms are configured to support the linear evaporation source so as to be horizontally movable, and drive the plurality of link mechanisms. Each link mechanism is provided with a drive mechanism, and each of the link mechanisms that are independently driven and controlled cooperates to horizontally move the linear evaporation source. One substrate and the second steam A vapor deposition apparatus characterized in that it can be moved along the vapor deposition surface of the other substrate in the region, and can be switched between the first vapor deposition region and the second vapor deposition region. .   Each of the link mechanisms is configured so that a plurality of the links are pivotably connected to bend and open in a direction parallel to the deposition surface of the substrate, and the degree of bending of each of the link mechanisms is controlled by the drive mechanism. Thus, the linear evaporation source is configured to be movable along the deposition surface of the one substrate in the first deposition region and the other substrate in the second deposition region, and the first evaporation source The vapor deposition apparatus according to claim 1, wherein the vapor deposition apparatus is configured to be able to switch and move between the vapor deposition region and the second vapor deposition region.   The vapor deposition apparatus according to claim 1, wherein the driving mechanism is provided in the atmosphere.   The linear evaporation source is horizontally moved to dispose the linear evaporation source in the first vapor deposition region, and the linear evaporation source is moved along the deposition surface of the substrate to deposit on the first substrate. Meanwhile, a pre-deposition process is performed on the second substrate carried into the second deposition region, and when the deposition on the first substrate is completed in the first deposition region, the linear evaporation source is moved to the second deposition region. The linear evaporation source is disposed in the second vapor deposition region, and the linear evaporation source is moved along the deposition surface of the substrate to start vapor deposition on the second substrate. In the first vapor deposition zone, the first substrate is carried out, a new third substrate is carried into the first vapor deposition zone, and a pre-deposition process is performed. And configured to be vapor-deposited on the substrate in any of the second vapor deposition zones. Deposition apparatus according to any one of claims 1 to 3, wherein.   A plurality of vapor deposition chambers having the first vapor deposition region and the second vapor deposition region are connected to a substrate conveyance chamber having a substrate conveyance mechanism for conveying the substrate to the vapor deposition chamber, and the substrate carried into the substrate conveyance chamber is The said board | substrate conveyance mechanism is comprised so that it may allocate suitably to each vapor deposition area | region of the said vapor deposition chamber, It comprised so that one substrate conveyance chamber might be shared by several vapor deposition chambers, The any one of Claims 1-4 characterized by the above-mentioned. 2. The vapor deposition apparatus according to item 1.