JP2014086421A - 有機発光素子用光取り出し基板の製造方法 - Google Patents
有機発光素子用光取り出し基板の製造方法 Download PDFInfo
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- JP2014086421A JP2014086421A JP2013218321A JP2013218321A JP2014086421A JP 2014086421 A JP2014086421 A JP 2014086421A JP 2013218321 A JP2013218321 A JP 2013218321A JP 2013218321 A JP2013218321 A JP 2013218321A JP 2014086421 A JP2014086421 A JP 2014086421A
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- 239000000758 substrate Substances 0.000 title claims abstract description 102
- 238000000605 extraction Methods 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 56
- 230000008569 process Effects 0.000 claims abstract description 38
- 229910052809 inorganic oxide Inorganic materials 0.000 claims abstract description 33
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims description 72
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 68
- 238000000151 deposition Methods 0.000 claims description 25
- 238000007740 vapor deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 13
- 238000003475 lamination Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 78
- 239000011787 zinc oxide Substances 0.000 description 33
- 239000011521 glass Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 9
- 238000000149 argon plasma sintering Methods 0.000 description 7
- 239000007800 oxidant agent Substances 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000005354 aluminosilicate glass Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000005345 chemically strengthened glass Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/216—ZnO
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
- C03C2218/1525—Deposition methods from the vapour phase by cvd by atmospheric CVD
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】常圧化学気相蒸着工程にて有機発光素子用光取り出し基板を製造するものであって、ベース基板上に無機酸化物を蒸着して、前記無機酸化物からなる光取り出し層を形成し、前記無機酸化物を少なくとも2回積層蒸着して、前記光取り出し層の表面に形成されるテクスチャリングの構造を制御する。
【選択図】図1
Description
101 ベース基板
111 第1薄膜層
112 第2薄膜層
10 コンベヤー
20 第1インジェクター
30 第2インジェクター
Claims (9)
- 常圧化学気相蒸着工程にて有機発光素子用光取り出し基板を製造する方法であって、
ベース基板上に無機酸化物を少なくとも2回積層蒸着して光取り出し層を形成し、
前記光取り出し層の表面に形成されるテクスチャリングの構造を制御することを特徴とする有機発光素子用光取り出し基板の製造方法。 - ベース基板上に前記無機酸化物を少なくとも2回積層蒸着する工程は、
第1蒸着温度下で前記ベース基板上に前記無機酸化物を蒸着して第1薄膜層を形成するステップ、
第2蒸着温度下で、蒸着された前記第1薄膜層上に前記無機酸化物をさらに蒸着して第2薄膜層を形成するステップを含むことで、二重膜構造の前記光取り出し層を形成することを特徴とする請求項1に記載の有機発光素子用光取り出し基板の製造方法。 - 前記第1薄膜層は、0.4〜1.7μmの厚さで形成され、
前記第2薄膜層は、2.1〜2.9μmの厚さで形成されることを特徴とする請求項2に記載の有機発光素子用光取り出し基板の製造方法。 - 前記第1蒸着温度と前記第2蒸着温度とは、異なる温度であることを特徴とする請求項2に記載の有機発光素子用光取り出し基板の製造方法。
- 前記第1蒸着温度と前記第2蒸着温度とは、350〜640℃の温度範囲から選択された異なる温度であることを特徴とする請求項4に記載の有機発光素子用光取り出し基板の製造方法。
- ベース基板上に無機酸化物を少なくとも2回積層蒸着する工程は、インライン(in−line)工程で施されることを特徴とする請求項1に記載の有機発光素子用光取り出し基板の製造方法。
- 前記無機酸化物は、前記ベース基板よりも相対的に屈折率の高い物質からなることを特徴とする請求項1に記載の有機発光素子用光取り出し基板の製造方法。
- 前記無機酸化物は、ZnO、SnO2、SiO2、Al2O3、及びTiO2からなる無機酸化物の物質群のいずれか一種からなることを特徴とする請求項7に記載の有機発光素子用光取り出し基板の製造方法。
- ベース基板上に無機酸化物を少なくとも2回積層蒸着する工程の実施途中または実施後にドーパントをドープするステップをさらに含むことを特徴とする請求項1に記載の有機発光素子用光取り出し基板の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020120117834A KR101421023B1 (ko) | 2012-10-23 | 2012-10-23 | 유기발광소자용 광추출 기판 제조방법 |
KR10-2012-0117834 | 2012-10-23 |
Publications (2)
Publication Number | Publication Date |
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JP2014086421A true JP2014086421A (ja) | 2014-05-12 |
JP6191382B2 JP6191382B2 (ja) | 2017-09-06 |
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JP2013218321A Expired - Fee Related JP6191382B2 (ja) | 2012-10-23 | 2013-10-21 | 有機発光素子用光取り出し基板の製造方法 |
Country Status (5)
Country | Link |
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US (1) | US20140113068A1 (ja) |
EP (1) | EP2725634B1 (ja) |
JP (1) | JP6191382B2 (ja) |
KR (1) | KR101421023B1 (ja) |
CN (1) | CN103779510B (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012141875A1 (en) * | 2011-04-12 | 2012-10-18 | Arkema Inc. | Internal optical extraction layer for oled devices |
US20120261701A1 (en) * | 2011-04-18 | 2012-10-18 | Samsung Corning Precision Materials Co., Ltd. | Light extraction substrate for electroluminescent device and manufacturing method thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US6965197B2 (en) * | 2002-10-01 | 2005-11-15 | Eastman Kodak Company | Organic light-emitting device having enhanced light extraction efficiency |
JP2010147394A (ja) * | 2008-12-22 | 2010-07-01 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
KR101074797B1 (ko) * | 2009-07-29 | 2011-10-19 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 |
KR20110133376A (ko) * | 2010-06-04 | 2011-12-12 | 주식회사 티지솔라 | 유기 발광 다이오드용 기판의 텍스쳐링 방법 및 이를 이용한 유기 발광 다이오드의 제조 방법 |
KR101114916B1 (ko) * | 2010-12-27 | 2012-02-14 | 주식회사 엘지화학 | 유기발광소자용 기판 및 그 제조방법 |
US20120240634A1 (en) * | 2011-03-23 | 2012-09-27 | Pilkington Group Limited | Method of depositing zinc oxide coatings by chemical vapor deposition |
KR101842586B1 (ko) * | 2011-04-05 | 2018-03-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR101359681B1 (ko) * | 2012-08-13 | 2014-02-07 | 삼성코닝정밀소재 주식회사 | 금속산화물 박막 기판, 그 제조방법, 이를 포함하는 광전지 및 유기발광소자 |
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2012
- 2012-10-23 KR KR1020120117834A patent/KR101421023B1/ko active IP Right Grant
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2013
- 2013-10-18 EP EP13189202.8A patent/EP2725634B1/en not_active Not-in-force
- 2013-10-21 JP JP2013218321A patent/JP6191382B2/ja not_active Expired - Fee Related
- 2013-10-22 US US14/060,264 patent/US20140113068A1/en not_active Abandoned
- 2013-10-23 CN CN201310503837.3A patent/CN103779510B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012141875A1 (en) * | 2011-04-12 | 2012-10-18 | Arkema Inc. | Internal optical extraction layer for oled devices |
US20120261701A1 (en) * | 2011-04-18 | 2012-10-18 | Samsung Corning Precision Materials Co., Ltd. | Light extraction substrate for electroluminescent device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
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CN103779510B (zh) | 2016-09-07 |
EP2725634A2 (en) | 2014-04-30 |
EP2725634A3 (en) | 2016-09-28 |
CN103779510A (zh) | 2014-05-07 |
US20140113068A1 (en) | 2014-04-24 |
EP2725634B1 (en) | 2019-04-03 |
JP6191382B2 (ja) | 2017-09-06 |
KR101421023B1 (ko) | 2014-07-22 |
KR20140051603A (ko) | 2014-05-02 |
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LAPS | Cancellation because of no payment of annual fees |