JP2014067783A - Substrate processing apparatus, semiconductor device manufacturing method and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, a semiconductor device manufacturing method and a substrate processing method, which disperse flow of a processing gas supplied into a processing chamber to improve uniformity of a film thickness of a thin film formed on a substrate.SOLUTION: The substrate processing apparatus comprises: a processing chamber 5 for housing a plurality of substrates 7 and processing the substrates 7; one and more processing gas supply parts 35, 36 each including a plurality of processing gas ejection ports 63a, 63b, 64 which extend in a lamination direction of the substrates and are opened in a plurality of directions in a horizontal plane with respect to a surface of the substrate for supplying a processing gas to inside the processing chamber; and a plurality of inert gas supply parts 37, 38 which are arranged so as to sandwich the plurality of processing gas ejection ports from both sides along a circumferential direction of the substrate and in which one and more inert gas ejection ports 65, 66 for supplying the inert gas are opened.

Description

  The present invention relates to a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate processing method for performing processing such as oxidation processing, diffusion processing, and thin film generation on a substrate such as a wafer.

  Conventionally, as a process of manufacturing a semiconductor device such as a DRAM (Dynamic Random Access Memory), for example, there is a substrate processing process in which a thin film is formed on a substrate by a substrate processing apparatus.

  2. Description of the Related Art A substrate processing apparatus used in a conventional substrate processing process includes a processing chamber that stores and processes substrates stacked in multiple stages in a horizontal posture, and a processing gas supply nozzle that supplies at least one processing gas into the processing chamber. It has a processing gas supply unit, an inert gas supply unit having an inert gas supply nozzle for supplying an inert gas into the processing chamber, and an exhaust line for exhausting the processing chamber.

  When forming a thin film on a substrate, a substrate holder for holding a plurality of substrates is carried into the processing chamber, and gas is supplied from the processing gas supply nozzle to the processing chamber while exhausting the processing chamber by an exhaust line. A thin film was formed on the substrate by passing a gas between the substrates.

  However, in the substrate processing using the conventional substrate processing apparatus, both the processing gas supplied from the processing gas supply nozzle and the inert gas supplied from the inert gas supply nozzle flow toward the center of the substrate. Therefore, there is a difference in the supply amount of the processing gas between the outer peripheral direction of each substrate and the vicinity of the center. In particular, when the processing gas is supplied while rotating the substrate, the processing gas that is easily pyrolyzed concentrates in one direction and adheres to the substrate, so the thin film formed near the outer periphery of the substrate is near the center of the substrate. There is a tendency that the in-plane uniformity of the processing substrate is lowered due to the thinning of the thin film.

JP 2009-206489 A

  In view of such circumstances, the present invention disperses the flow of the processing gas supplied into the processing chamber and improves the uniformity of the thickness of the thin film formed on the substrate, the manufacturing method of the semiconductor device, and the substrate processing method Is to provide.

  According to a preferred aspect of the present invention, a processing chamber for accommodating and processing a plurality of substrates, a substrate extending in the stacking direction, and being opened in a plurality of directions within a plane horizontal to the surface of the substrate, One or more processing gas supply parts provided with a plurality of processing gas jets for supplying a processing gas into the processing chamber, and the plurality of processing gas jets sandwiched from both sides along the circumferential direction of the substrate Provided is a substrate processing apparatus having a plurality of inert gas supply units provided with one or more inert gas outlets for supplying an inert gas.

  According to another preferable aspect of the present invention, a substrate carrying-in process for carrying a substrate into the processing chamber, a substrate processing process for processing the substrate by supplying an inert gas and one or more processing gases into the processing chamber, A method of manufacturing a semiconductor device comprising a substrate unloading step of unloading a substrate after processing from the processing chamber, wherein in the substrate processing step, a processing gas is supplied in a plurality of directions parallel to the surface of the substrate. In addition, a method of manufacturing a semiconductor device is provided that supplies an inert gas so that the flow of the processing gas is held from both sides.

  Furthermore, according to another preferable aspect of the present invention, a substrate carrying-in process for carrying a substrate into the processing chamber, and a substrate processing process for processing the substrate by supplying an inert gas and one or more processing gases into the processing chamber. And a substrate unloading step of unloading the processed substrate from the processing chamber, wherein the substrate processing step supplies process gas in a plurality of directions parallel to the surface of the substrate. There is provided a substrate processing method for supplying an inert gas so as to hold the flow of the processing gas from both sides.

  According to the present invention, the flow of processing gas is concentrated in the substrate processing step, and it is possible to suppress the formation of an excessively thick film at the center of the substrate, thereby improving the in-plane uniformity of the film. In addition, the flow path of the processing gas is limited, it is possible to prevent the processing gas from flowing out of the outer periphery of the substrate, and the film forming efficiency can be improved.

1 is an elevational sectional view showing a processing furnace of a substrate processing apparatus according to a first embodiment of the present invention. It is a plane sectional view showing the processing furnace of the substrate processing apparatus concerning the 1st example of the present invention. It is a 1st process gas supply nozzle which concerns on 1st Example of this invention, (A) shows the side view of a 1st process gas supply nozzle, (B) shows the elevation of a 1st process gas supply nozzle. (C) has shown the AA arrow line view of (A). It is a plane sectional view of the processing furnace which shows the modification of the 1st example of the present invention. It is a flowchart explaining the substrate processing process which concerns on 1st Example of this invention. It is a sequence diagram explaining the film-forming process which concerns on the 1st Example of this invention. It is a graph which shows the in-plane uniformity of the film | membrane formed into a film, (A) shows the graph at the time of using the 1st process gas supply nozzle of this invention, (B) uses the conventional process gas supply nozzle. The graph is shown when there is. It is a plane sectional view showing the processing furnace of the substrate processing apparatus concerning the 2nd example of the present invention.

  Embodiments of the present invention will be described below with reference to the drawings.

  As an embodiment of the present invention, an example of a substrate processing apparatus will be described. The substrate processing apparatus is configured as an example of a semiconductor manufacturing apparatus used for manufacturing a semiconductor device (IC (Integrated Circuits)). First, in FIG. 1 and FIG. 2, a processing furnace in the case of using a vertical apparatus for performing a film forming process on a substrate will be described as an example of a substrate processing apparatus. Note that this embodiment is not based on the use of a vertical apparatus, and needless to say, for example, a single-wafer type substrate processing apparatus may be used.

The processing furnace 1 is provided with a vertical process tube 2 as a reaction tube that is vertically arranged so that the center line is vertical, and is fixedly supported by a housing (not shown) of a substrate processing apparatus. doing. The process tube 2 includes an inner tube 3 and an outer tube 4, and the inner tube 3 and the outer tube 4 are made of a cylinder having a high heat resistance such as quartz (SiO ₂ ) or silicon carbide (SiC). Are integrally molded.

  The inner tube 3 has a cylindrical shape with the upper end closed and the lower end opened. A processing chamber 5 is defined inside the inner tube 3, and wafers 7 as substrates stacked in multiple stages in a horizontal posture on a boat 6 as a substrate holder are stored and processed in the processing chamber 5. . Further, the lower end opening of the inner tube 3 constitutes a furnace port for taking in and out the boat 6 holding the wafer 7 group. Accordingly, the inner diameter of the inner tube 3 is set to be larger than the maximum diameter of the boat 6 holding the wafer 7 group.

  The outer tube 4 is similar in size to the inner tube 3, has a cylindrical shape with the upper end closed and the lower end opened, and is arranged concentrically so as to surround the inner tube 3. The lower ends of the inner tube 3 and the outer tube 4 are hermetically sealed by flanges of a manifold 8 formed in a cylindrical shape. The manifold 8 is detachably attached to the inner tube 3 and the outer tube 4 for maintenance and inspection work and cleaning work on the inner tube 3 and the outer tube 4. Since the manifold 8 is supported by a housing (not shown), the process tube 2 is vertically installed.

  An exhaust pipe 9 as an exhaust line for exhausting the atmosphere in the processing chamber 5 is connected to a part of the side wall of the manifold 8. An exhaust port 11 is formed at a connection portion between the manifold 8 and the exhaust pipe 9 to allow the atmosphere in the processing chamber 5 to communicate with the exhaust pipe 9. The exhaust pipe 9 communicates with an exhaust path 12 formed of a gap formed between the inner tube 3 and the outer tube 4 through the exhaust port 11. The cross-sectional shape of the exhaust passage 12 is a circular ring shape with a constant width. The exhaust pipe 9 is provided with a pressure sensor 13, an APC (Auto Pressure Controller) valve 14 as a pressure adjustment valve, and a vacuum pump 15 as a vacuum exhaust device in order from the upstream.

  The vacuum pump 15 is configured to perform vacuum evacuation so that the pressure in the processing chamber 5 becomes a predetermined pressure (degree of vacuum). A pressure control unit 16 is electrically connected to the APC valve 14 and the pressure sensor 13. The pressure control unit 16 controls the opening degree of the APC valve 14 based on the pressure detected by the pressure sensor 13 so that the pressure in the processing chamber 5 becomes a desired pressure at a desired timing. It is configured.

  The exhaust pipe 9, the pressure sensor 13, and the APC valve 14 mainly constitute the exhaust unit in this embodiment. The vacuum pump 15 may be included in the exhaust unit.

  A seal cap 17 for closing the lower end opening of the manifold 8 is brought into contact with the manifold 8 from the lower side in the vertical direction. The seal cap 17 is formed in a disk shape having a diameter equal to or larger than the outer diameter of the outer tube 4, and is vertically oriented in a horizontal posture by a boat elevator 18 installed vertically outside the process tube 2. It is configured to move up and down.

On the seal cap 17, the boat 6 that holds the wafers 7 is vertically supported and supported. The boat 6 includes a pair of upper and lower end plates 19 and 19 and a plurality of holding members 21 provided vertically between the end plates 19 and 19. The end plate 19 and the holding member 21 are made of a heat resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC). Each holding member 21 has a plurality of holding grooves 22 formed at equal intervals in the longitudinal direction. Each holding member 21 is provided so that the holding grooves 22 face each other, and the circumferential edges of the wafers 7 are inserted into the holding grooves 22 on the same stage, so that a plurality of wafers 7 are in a horizontal posture and It is configured to be stacked and held in multiple stages with the centers aligned.

A pair of auxiliary end plates 23, 23 are provided between the boat 6 and the seal cap 17, and the auxiliary end plates 23, 23 are supported by a plurality of auxiliary holding members 24. . Each auxiliary holding member 24 is formed with a plurality of holding grooves 25, and the holding grooves 25 have a disk-shaped heat insulating plate made of a heat resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC). (Not shown) are loaded in multiple stages in a horizontal posture. The heat insulating plate is configured to make it difficult for heat from a heater unit 26 described later to be transmitted to the manifold 8 side.

  A rotation mechanism 27 for rotating the boat 6 is provided on the side of the seal cap 17 opposite to the processing chamber 5. A rotating shaft 28 of the rotating mechanism 27 passes through the seal cap 17 and supports the boat 6 from below. The wafer 7 can be rotated in the processing chamber 5 by rotating the rotating shaft 28. The seal cap 17 is moved up and down in the vertical direction by the boat elevator 18 so that the boat 6 can be conveyed into and out of the processing chamber 5.

  A drive control unit 29 is electrically connected to the boat elevator 18 and the rotation mechanism 27. The drive control unit 29 controls the boat elevator 18 and the rotating mechanism 27 to perform a desired operation at a desired timing.

  Outside the outer tube 4, the heater unit 26 as a heating mechanism that heats the inside of the process tube 2 uniformly or with a predetermined temperature distribution is provided so as to surround the outer tube 4. It has been. The heater unit 26 is provided inside the heat insulating material and is vertically installed by being supported by a housing (not shown) of a substrate processing apparatus. For example, a resistance heater such as a carbon heater is provided. It is configured as.

  A temperature sensor 31 as a temperature detector is installed in the process tube 2. A temperature control unit 32 is electrically connected to the heater unit 26 and the temperature sensor 31, and based on the temperature information detected by the temperature sensor 31, the temperature control unit 32 determines the temperature in the processing chamber 5. The state of energization to the heater unit 26 is controlled so that a desired temperature distribution is obtained at a desired timing.

  The heater unit 26 and the temperature sensor 31 mainly constitute the heating unit in this embodiment.

  A channel-shaped auxiliary chamber 33 is formed on the side wall of the inner tube 3 so as to protrude outward in the radial direction of the inner tube 3 and extend long in the vertical direction. The side wall 34 of the preliminary chamber 33 constitutes a part of the side wall of the inner tube 3, and the inner wall of the preliminary chamber 33 constitutes a part of the inner wall of the processing chamber 5. The preliminary chamber 33 extends in the stacking direction of the wafer 7 along the inner wall of the preliminary chamber 33 (that is, the inner wall of the processing chamber 5), and supplies a processing gas into the processing chamber 5. 1 and 2nd process gas supply nozzles 35 and 36 are provided. The preliminary chamber 33 is extended in the stacking direction of the wafers 7 along the inner wall of the preliminary chamber 33 (that is, the inner wall of the processing chamber 5), and inert gas is introduced into the processing chamber 5. Two first and second inert gas supply nozzles 37 and 38 to be supplied are provided so as to sandwich the first and second processing gas supply nozzles 35 and 36 from both along the circumferential direction of the wafer 7. ing.

  The first and second process gas supply nozzles 35 and 36 and the first and second inert gas supply nozzles 37 and 38 have L-shapes each having a vertical portion and a horizontal portion. Ends, that is, first and second processing gas introduction ports 39 and 41 that are upstream ends of the first and second processing gas supply nozzles 35 and 36, and the first and second inert gas supply nozzles. First and second inert gas introduction ports 42 and 43 which are upstream ends of 37 and 38 respectively penetrate the side wall of the manifold 8 in the radial direction and project outside the process tube 2.

  First and second processing gas supply pipes 44 and 45 as processing gas supply lines are connected to the first and second processing gas introduction ports 39 and 41, respectively.

For example, TEMAH (Hf [NCH ₃ C ₂ H ₅ ] ₄ , tetrakisethylmethylaminohafnium) or TEMAZ (Zr [NCH ₃ C ₂ ) as a liquid raw material is sequentially connected to the first processing gas supply pipe 44 from the upstream side. H ₅ ] ₄ tetrakisethylmethylaminozirconium), a first processing gas supply source 46 for supplying a processing gas such as a gas (TEMAH gas or TEMAZ gas), a first MFC (mass flow controller) 47 as a flow rate control device, The first opening / closing valve 48 is provided. A first process gas supply unit (first process gas supply system) is mainly configured by the first process gas supply nozzle 35, the first process gas supply pipe 44, the first MFC 47, and the first opening / closing valve 48. . The first processing gas supply source 46 may be included in the first processing gas supply unit.

As described above, the processing gas that is sandwiched from both sides by the inert gas is a gas whose thermal decomposition temperature is lower than the processing temperature (film formation temperature), and for example, TEMAH gas, TEMAZ gas, or the like is used. A carrier gas supply pipe (not shown) is connected to the first processing gas supply pipe 44 downstream of the first opening / closing valve 48. By supplying N ₂ gas as a carrier gas from the carrier gas supply pipe, the processing gas is diluted to supply the processing gas into the processing chamber 5 and to diffuse the processing gas in the processing chamber 5. It is possible to prompt.

In addition, the second processing gas supply pipe 45, in order from the upstream side, for example, a second processing gas supply source 49 for supplying a processing gas such as O ₃ (ozone) gas, a second MFC 51 as a flow control device, and a second Two open / close valves 52 are provided. A second process gas supply unit (second process gas supply system) is mainly configured by the second process gas supply nozzle 36, the second process gas supply pipe 45, the second MFC 51, and the second opening / closing valve 52. . The second processing gas supply source 49 may be included in the second processing gas supply unit.

A carrier gas supply pipe (not shown) is connected to the second processing gas supply pipe 45 downstream of the second opening / closing valve 52. By supplying N ₂ gas as a carrier gas from the carrier gas supply pipe, the processing gas is diluted to supply the processing gas into the processing chamber 5 and to diffuse the processing gas in the processing chamber 5. It is possible to prompt.

First and second inert gas supply pipes 53 and 54 serving as inert gas supply lines are connected to the first and second inert gas introduction ports 42 and 43. First and second inert gas supply sources for supplying an inert gas such as N ₂ gas, Ar gas, and He gas in order from the upstream side to the first and second inert gas supply pipes 53 and 54. 55, 56, third and fourth MFCs 57, 58 as flow control devices, and third, fourth open / close valves 59, 61 are provided, respectively.

  The first inert gas supply nozzle 37, the first inert gas supply pipe 53, the third MFC 57, and the third opening / closing valve 59 mainly constitute a first inert gas supply unit, and the second The inert gas supply nozzle 38, the second inert gas supply pipe 54, the fourth MFC 58, and the fourth open / close valve 61 constitute a second inert gas supply unit (second inert gas supply system). The first inert gas supply source 55 and the second inert gas supply source 56 may be included in the second inert gas supply system.

  The first processing gas supply nozzle 35, the first processing gas supply pipe 44, the first MFC 47, the first opening / closing valve 48, a carrier gas supply pipe (not shown), and the second processing gas supply nozzle 36 are mainly used. The second processing gas supply pipe 45, the second MFC 51, the second opening / closing valve 52, and a carrier gas supply pipe (not shown) constitute a processing gas supply unit in this embodiment. Here, the first processing gas supply source 46 and the second processing gas supply source 499 may be included in the processing gas supply unit. That is, the first processing gas supply unit and the second processing gas supply unit constitute a processing gas supply unit. The first inert gas supply nozzle 37, the first inert gas supply pipe 53, the third MFC 57, the third on-off valve 59, the second inert gas supply nozzle 38, the second The inert gas supply pipe 54, the fourth MFC 58, and the fourth open / close valve 61 constitute an inert gas supply unit in this embodiment. Here, the first inert gas supply source 55 and the second inert gas supply source 56 may be included in the inert gas supply unit. That is, the first inert gas supply unit and the second inert gas supply unit constitute an inert gas supply unit.

  A gas supply / flow rate controller 62 is electrically connected to the first to fourth MFCs 47, 51, 57, 58 and the first to fourth on-off valves 48, 52, 59, 61. The gas supply / flow rate control unit 62 is configured so that the type of gas supplied into the processing chamber 5 in each STEP described later becomes a desired gas type at a desired timing, and the flow rate of the supplied gas is a desired timing. The first to fourth MFCs 47, 51, 57, 58 and the first to fourth so that the concentration of the processing gas with respect to the inert gas becomes a desired concentration at a desired timing. The on-off valves 48, 52, 59, 61 are controlled.

  As shown in FIGS. 3A, 3B, and 3C, a vertical portion of the first process gas supply nozzle 35, that is, a portion extending into the preliminary chamber 33, is provided with a pair of first process gas jets. The outlets 63a and 63b are drilled in the same plane so as to be parallel to the wafers 7 stacked on the boat 6, and a plurality of the first process gas jets 63a and 63b are drilled at equal intervals in the vertical direction. Yes. The angle θ between the first process gas jets 63a and 63b formed in the vertical portion of the first process gas supply nozzle 35 is 0 ° to 96 °, that is, the first process gas jet 63a, It can be arbitrarily selected in a range from a state in which both 63b are directed toward the center of the wafer 7 to a state in which the first processing gas ejection ports 63a and 63b are respectively directed toward the peripheral edge of the wafer 7. . In this embodiment, for example, θ is set to 46 °, and the processing gas is jetted from the first processing gas jet ports 63a and 63b toward the middle between the center and the outer periphery of the wafer 7.

  Further, a second processing gas jet port 64 is formed in the same plane so as to be parallel to the wafer 7 in a vertical portion of the second processing gas supply nozzle 36, that is, a portion extending into the preliminary chamber 33. In addition, a plurality of holes are formed at equal intervals in the vertical direction. A processing gas is jetted from the second processing gas jet port 64 toward the center of the wafer 7.

  Further, first and second inert gas jets 65 and 66 are provided in the vertical portions of the first and second inert gas supply nozzles 37 and 38, that is, in the portions extending into the preliminary chamber 33, respectively. 7 is formed in the same plane so as to be parallel to the substrate 7 and is formed in plural at equal intervals in the vertical direction, and is not directed toward the center of the wafer 7 from the first and second inert gas jets 65, 66. Active gas is jetted out.

  The first and second processing gas supply nozzles 35 and 36 and the first and second inert gas supply nozzles 37 and 38 are provided in the preliminary chamber 33, so that the first processing gas supply nozzle 35 has the First process gas jets 63a and 63b, the second process gas jet 64 of the second process gas supply nozzle 36, and the first and second of the first and second inert gas supply nozzles 37 and 38, respectively. The inert gas outlets 65 and 66 are arranged on the radially outer side of the inner tube 3 from the inner peripheral surface of the inner tube 3.

  The number of the first process gas jets 63 a and 63 b, the second process gas jet 64, and the first and second inert gas jets 65 and 66 is, for example, the number of wafers 7 held in the boat 6. It is configured to match. The height positions of the first process gas jets 63a and 63b, the second process gas jet 64, and the first and second inert gas jets 65 and 66 are held in the boat 6, for example. It is set so as to face the space between the wafers 7 adjacent in the vertical direction. The diameters of the first process gas jets 63a and 63b, the second process gas jet 64, and the first and second inert gas jets 65 and 66 are determined by the amount of gas supplied to each wafer 7. Different sizes are set so as to be uniform. Further, the first processing gas jets 63a and 63b, the second processing gas jets 64, and the first and second inert gas jets 65 and 66 are provided one by one for a plurality of wafers 7 ( For example, it may be perforated one by one for several wafers 7.

  For example, a slit-shaped through-hole is formed on the side wall of the inner tube 3 at a position facing the first and second processing gas supply nozzles 35 and 36, that is, at a position opposite to the preliminary chamber 33 by 180 °. An exhaust hole 67 is elongated in the vertical direction, and the inside of the processing chamber 5 and the inside of the exhaust path 12 communicate with each other through the exhaust hole 67. Therefore, from the first process gas jets 63a and 63b, the process gas supplied from the second process gas jet 64 into the process chamber 5, and the first and second inert gas jets 65 and 66, respectively. The inert gas supplied into the processing chamber 5 flows into the exhaust passage 12 through the exhaust hole 67 and then flows into the exhaust pipe 9 through the exhaust port 11, and the processing furnace. It is designed to be discharged outside of 1. In this embodiment, the exhaust hole 67 is a slit-like through hole, but the exhaust hole 67 may be composed of a plurality of holes.

  The straight line connecting the first and second inert gas supply nozzles 37 and 38 and the exhaust hole 67 is a straight line connecting the first and second process gas supply nozzles 35 and 36 and the exhaust hole 67. It is supposed to be drowned. In the above description, the first and second inert gas jets 65 and 66 are bored toward the center of the wafer 7. However, the first and second inert gas jets 65 and 66 are It is good also as the direction opened outside. For example, as shown in FIG. 4, the inert gas ejected from the first inert gas ejection port 65 is parallel to the processing gas ejected from the first processing gas ejection port 63a. The inert gas ejected from the second inert gas ejection port 66 may be parallel to the processing gas ejected from the first processing gas ejection port 63b.

  With the above-described configuration, the vicinity of the wafer 7 in the processing chamber 5 from the first processing gas jets 63a and 63b, the second processing gas jets 64, the first and second inert gas jets 65 and 66. The gas supplied to the gas flows in a horizontal direction parallel to the surface of the wafer 7. That is, from the first process gas jets 63a and 63b, the second process gas jet 64, the first and second inert gas jets 65 and 66 so that the main flow of the gas is directed in the horizontal direction. Gas is ejected near the wafer 7 in the processing chamber 5.

  The pressure control unit 16, the drive control unit 29, the temperature control unit 32, and the gas supply / flow rate control unit 62 are electrically connected to a main control unit 68 that controls the entire substrate processing apparatus, The pressure controller 16, the drive controller 29, the temperature controller 32, the gas supply / flow rate controller 62, and the main controller 68 constitute a controller 69 that is an overall controller.

  Next, one process of the manufacturing process of the semiconductor device (device) performed using the processing furnace 1 described above will be described. Hereinafter, a method for forming a film on the wafer 7 in the processing chamber 5 will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 69.

As a film forming method, under certain film forming conditions (temperature, time, etc.), at least two kinds of mutually reactive processing gases used for film forming are alternately supplied onto the wafer 7 one by one to perform film forming. Use the technique. Hereinafter, an example of forming a ZrO ₂ film (zirconium oxide film), which is a high dielectric constant film (High-k film), on the wafer 7 using TEMAZ gas and O ₃ gas as the processing gas will be described with reference to FIGS. The description will be given with reference. FIG. 5 is a flowchart for explaining the substrate processing step, and FIG. 6 is a sequence diagram of the film forming step in the substrate processing step.

(Substrate loading process)
First, a plurality of wafers 7 are loaded into the boat 6 (wafer charge). The boat 6 holding a plurality of wafers 7 is lifted by the boat elevator 18 and loaded into the processing chamber 5 (boat loading). In this state, the seal cap 17 seals the lower end of the manifold 8 via an O-ring (not shown). In the substrate loading process, for example, it is desirable to open the third and fourth open / close valves 59 and 61 and continue to supply N ₂ gas as a purge gas into the inner tube 3.

(Decompression and temperature rise process)
Subsequently, the third and fourth on-off valves 59 and 61 are closed, and the vacuum pump 15 is evacuated so that the inner tube 3 (in the processing chamber 5) has a desired processing pressure (degree of vacuum). Adjust the pressure. At this time, the opening degree of the APC valve 14 is feedback controlled based on the pressure measured by the pressure sensor 13. Further, the amount of current supplied to the heater unit 26 is adjusted to adjust the temperature so that the surface of the wafer 7 has a desired processing temperature. Further, the boat 6 and the wafer 7 are rotated by the rotation mechanism 27. By rotating the wafer 7, the flow rate of the processing gas supplied to the surface of the wafer 7 can be made more uniform.

  After the pressure reduction and temperature raising process in the processing chamber 5 is completed, the pressure in the processing chamber 5 is a value in the range of 10 to 1000 Pa, for example 50 Pa, and the temperature in the processing chamber 5 is 180 to 250 ° C. When the value is within the range of, for example, 220 ° C., a film forming process including the following four STEPs is performed.

(Film formation process)
In the film forming process, STEP: 01 to STEP: 04 are defined as one cycle, and a high-k film (ZrO ₂ film) having a desired thickness is formed on the wafer 7 by repeating this cycle a predetermined number of times.

STEP: 01 (TEMAZ gas supply process) First, after the TEMAZ as a liquid raw material is vaporized by the first process gas supply source 46, the first open / close valve 48 is opened and the first process gas supply nozzle 35 is opened. The TEMAZ gas is supplied into the processing chamber 5 through. The TEMAZ gas is supplied into the processing chamber 5 while being diluted with N ₂ gas (carrier gas) from a carrier gas supply pipe (not shown) connected to the first processing gas supply pipe 44. It has become.

Since the TEMAZ gas is a gas that greatly affects the in-plane uniformity of the film thickness formed on the wafer 7, in the present embodiment, in parallel with the supply of the TEMAZ gas, The four open / close valves 59 and 61 are opened, and N ₂ gas as an inert gas is supplied into the processing chamber 5 through the first and second inert gas supply nozzles 37 and 38.

The TEMAZ gas supplied into the process chamber 5 from the first process gas supply nozzle 35 is diffused from the first process gas outlets 63a and 63b toward the center of the wafer 7 and the middle part of the outer periphery. Gas flow. At this time, N ₂ gas is introduced into the processing chamber 5 from the first and second inert gas outlets 65 and 66 so that the TEMAZ gas supplied from the first processing gas outlets 63a and 63b is introduced. By supplying, the flow path of the TEMAZ gas is limited. Accordingly, the diffused TEMAZ gas can be prevented from flowing out between the outer periphery of the wafer 7 and the inner tube 3, and the TEMAZ gas supplied to the center of the wafer 7 is the first and second inert gases. Diluted with N ₂ gas from the jets 65 and 66, can suppress the concentrated supply of TEMAZ gas to the center of the wafer 7, and uniformize the supply amount of TEMAZ gas to the center and outer periphery of each wafer 7. Can do.

Also, the flow of TEMAZ gas supplied from the first process gas jets 63a and 63b intersects the flow of N ₂ gas supplied from the first and second inert gas jets 65 and 66. Therefore, the TEMAZ gas is diluted at an early stage, the concentration unevenness is eliminated, and the uniformity of the TEMAZ gas supplied to the wafer 7 can be increased.

The TEMAZ gas supplied from the first process gas outlets 63a and 63b and the N ₂ gas supplied from the first and second inert gas outlets 65 and 66 are the exhaust hole 67, the exhaust passage 12, The gas is exhausted from the exhaust pipe 9 through the exhaust port 11. In the process, TEMAZ gas is supplied to the surface of each laminated wafer 7, and a Zr-containing layer is formed on each wafer 7.

After the supply of the TEMAZ gas and the N ₂ gas is continued for a predetermined time, the first opening / closing valve 48 is closed, and the supply of the TEMAZ gas into the processing chamber 5 is stopped.

The flow rate of N ₂ gas supplied from the first and second inert gas jets 65 and 66 is higher than the flow rate of TEMAZ gas supplied from the first process gas jets 63a and 63b. Is preferred. By setting the flow rate of the N ₂ gas to be equal to or higher than the flow rate of the TEMAZ gas, the dilution of the TEMAZ gas is further promoted, and the supply amount of the TEMAZ gas on the wafer 7 can be made more uniform.

During execution of STEP: 01, the pressure in the processing chamber 5 is adjusted to a value in the range of 10 to 700 Pa, for example, 140 Pa. Further, the supply flow rate of the TEMAZ gas from the first process gas supply nozzle 35 is a value within a range of 0.01 to 0.35 g / min, for example, 0.3 g / min, and is not illustrated. Adjustment is made so that the supply flow rate of N ₂ gas (carrier gas) from the carrier gas supply pipe is a value in the range of 5 to 25 slm, for example, 22 slm. Further, the supply flow rates of N ₂ gas (inert gas) from the first and second inert gas supply nozzles 37 and 38 are values within the range of 0.5 to 9 slm, for example, 4 slm. Adjust as follows. The temperature in the processing chamber 5 is a value in the range of 180 to 250 ° C., for example, 220 ° C., and the time for exposing the TEMAZ gas to the wafer 7 is a value in the range of 30 to 180 seconds. For example, 120 seconds.

STEP: 02 (residual gas removal step) Subsequently, the TEMAZ gas remaining in the processing chamber 5 is exhausted. At this time, by keeping the APC valve 14 of the exhaust pipe 9 and the third and fourth open / close valves 59 and 61 of the first and second inert gas supply pipes 53 and 54 open, 1. The N ₂ gas supplied from the second inert gas supply nozzles 37 and 38 functions as a purge gas. First, the N ₂ gas from the second inert gas supply nozzles 37 and 38, the atmosphere in the processing chamber 5 was replaced with N ₂ gas, closing the third, fourth on-off valve 59, 61 Further, the inside of the processing chamber 5 is evacuated until a predetermined pressure is reached.

During execution of STEP: 02, the pressure in the processing chamber 5 is adjusted to be 10 to 100 Pa, for example, 70 Pa or less. At this time, the gas remaining in the processing chamber 5 may not be completely removed, and the processing chamber 5 may not be completely purged. If the amount of gas remaining in the processing chamber 5 is very small, no adverse effect will occur in the subsequent step 03. At this time, the flow rate of the N ₂ gas supplied into the processing chamber 5 does not need to be a large flow rate. For example, by supplying an amount similar to the volume of the inner tube 3 (processing chamber 5), step 03 In this case, purging can be performed to such an extent that no adverse effect occurs. Thus, by not completely purging the inside of the processing chamber 5, the purge time can be shortened and the throughput can be improved. In addition, consumption of N ₂ gas can be minimized. Further, the supply flow rate of N ₂ gas from the first and second inert gas supply nozzles 37 and 38 is adjusted to be a value within the range of 0.5 to 5 slm, for example, 0.5 slm. To do. Further, the temperature in the processing chamber 5 is a value within the range of 180 to 250 ° C., for example, adjusted to be 220 ° C., and the execution time of STEP: 02 is within the range of 30 to 150 seconds. For example, 60 seconds.

STEP: 03 (O ₃ supply step) After the O ₃ gas is generated from the O ₂ gas by the second process gas supply source 49, the second on-off valve 52 of the second process gas supply pipe 45 is opened. O ₃ gas is supplied into the processing chamber 5 through the second processing gas supply nozzle 36. The O ₃ gas is supplied into the processing chamber 5 while being diluted by N ₂ gas (carrier gas) from a carrier gas supply pipe (not shown) connected to the second processing gas supply pipe 45. It has become.

Since the O ₃ gas is a gas that has a small influence on the in-plane uniformity of the film thickness formed on the wafer 7, in the present embodiment, the second processing gas jet port 64 is directed toward the center of the wafer 7. The N ₂ gas (inert gas) is not supplied from the first and second inert gas supply nozzles 37 and 38. However, when the processing gas supplied at STEP 03 is a gas that affects the in-plane uniformity of the film thickness formed on the wafer 7, the processing gas is diffused in two directions. Two process gas jets 64 may be provided at two locations, and N ₂ gas may be supplied from the first and second inert gas supply nozzles 37 and 38.

The O ₃ gas supplied from the second processing gas jet port 64 is exhausted from the exhaust pipe 9 through the exhaust hole 67, the exhaust path 12, and the exhaust port 11. In the process, the Zr-containing layer on the wafer 7 reacts with the O ₃ gas, and a High-k film (ZrO ₂ film) is generated on the wafer 7.

After the supply of O ₃ gas is continued for a predetermined time, the second opening / closing valve 52 is closed, and the supply of O ₃ gas into the processing chamber 5 is stopped.

During execution of STEP: 03, the pressure in the processing chamber 5 is adjusted to a value in the range of 10 to 300 Pa, for example, 100 Pa. Further, the O ₃ gas supply flow rate from the second process gas supply nozzle 36 is adjusted to a value in the range of 6 to 20 slm, for example, 17 slm. The supply flow rate of N ₂ gas (carrier gas) from a carrier gas supply pipe (not shown) connected to the second processing gas supply pipe 45 is a value within a range of 0 to 2 slm, for example, Adjust to 0.5 slm. Further, the temperature in the processing chamber 5 is adjusted to be a value in the range of 180 to 250 ° C., and the time for exposing the wafer 7 to the O ₃ gas is a value in the range of 10 to 300 seconds. 120 seconds.

STEP: 04 (residual gas removal step) Subsequently, the O ₃ gas and reaction products remaining in the processing chamber 5 are exhausted. At this time, the APC valve 14 of the exhaust pipe 9 is kept open, and the third and fourth open / close valves 59 and 61 of the first and second inert gas supply pipes 53 and 54 are opened. The N ₂ gas supplied from the first and second inert gas supply nozzles 37 and 38 functions as a purge gas. First, the N ₂ gas from the second inert gas supply nozzles 37 and 38, the atmosphere in the processing chamber 5 was replaced with N ₂ gas, closing the third, fourth on-off valve 59, 61 Further, the inside of the processing chamber 5 is evacuated until a predetermined pressure is reached.

During execution of STEP: 04, the pressure in the processing chamber 5 is adjusted to a value in the range of 10 to 100 Pa, for example, 70 Pa or less. Further, the supply flow rate of the N ₂ gas (purge gas) from the first and second inert gas supply nozzles 37 and 38 is adjusted to be a value in the range of 5 to 25 slm. At this time, the gas remaining in the processing chamber 5 may not be completely removed, and the processing chamber 5 may not be completely purged. If the amount of gas remaining in the processing chamber 5 is very small, no adverse effect will occur even when the step 01 is subsequently performed. At this time, the flow rate of the N ₂ gas supplied into the processing chamber 5 does not need to be a large flow rate. For example, by supplying an amount similar to the volume of the inner tube 3 (processing chamber 5), step: 01 In this case, purging can be performed to such an extent that no adverse effect occurs. Thus, by not completely purging the inside of the processing chamber 5, the purge time can be shortened and the throughput can be improved. In addition, consumption of N ₂ gas can be minimized. Further, the temperature in the processing chamber 5 is a value within the range of 180 to 250 ° C., for example, adjusted to be 220 ° C., and the execution time of STEP: 04 is within the range of 10 to 90 seconds. For example, 60 seconds.

The above-described STEP: 01 to STEP: 04 are defined as one cycle, and the TEMAZ gas and the O ₃ gas are alternately supplied into the processing chamber 5 without being mixed with each other by repeating the cycle a predetermined number of times. A high-k film (ZrO ₂ film) having a desired film thickness can be formed. Needless to say, the processing conditions of each step are not necessarily limited to the above.

7A and 7B are graphs showing the film thickness distribution of the ZrO ₂ film formed on the wafer 7. 7A shows a case where the first process gas supply nozzle 35 for diffusing the TEMAZ gas of this embodiment shown in FIG. 2 in two directions is used and N ₂ gas is supplied toward the center of the wafer 7. shows the thickness distribution of the ZrO ₂ film, FIG. 7 (B) is supplied in one direction toward the TEMAZ gas in the center of the wafer 7, the thickness of the ZrO ₂ film when using conventional processing gas supply nozzle Distribution is shown. 7A and 7B, the vertical axis represents the film thickness, the horizontal axis represents the in-plane position of the wafer 7, and the 0 position on the horizontal axis represents the center of the wafer 7.

FIG. 7A shows the supply flow rate of N ₂ gas supplied from the first and second inert gas supply nozzles 37 and 38 in STEP: 01 of the film forming process described above, 4 slm, 0. The film thickness distribution of three patterns in the case of .5 slm and 9 slm is shown. Even when the supply flow rate of N ₂ gas is 9 slm, the in-plane uniformity of the ZrO ₂ film on the wafer 7 is worse than the conventional film thickness distribution, but the other two examples, particularly the supply of N ₂ gas When the flow rate is 4 slm, it can be seen that the in-plane uniformity of the ZrO ₂ film on the wafer 7 is greatly improved.

Further, when the flow rate is 9 slm, the film thickness in the central part is thick and the film thickness in the peripheral part is thin, and the tendency of the film thickness distribution is reversed with respect to the cases of 4 slm and 0.5 slm. Therefore, the tendency of the film thickness distribution can be controlled by adjusting the flow rate of the N ₂ gas.

As shown in FIG. 4, even when N ₂ gas is supplied in parallel with the TEMAZ gas diffused in _two directions, the TEMAZ gas is supplied in the outer peripheral direction of the wafer 7. It is predicted that the distribution tendency of various film thickness is shown.

(Pressurization process, substrate unloading process)
After a high-k film (ZrO ₂ film) having a desired film thickness is formed on the wafer 7, the opening degree of the APC valve 14 is reduced, and the third and fourth on-off valves 59 and 61 are opened to N ₂ gas (purge gas) is supplied until the pressure in the process tube 2 returns to atmospheric pressure. Thereafter, the film-formed wafer 7 is unloaded from the processing chamber 5 (boat unloading) by the reverse procedure of the substrate loading process, and finally the processed wafer 7 is unloaded from the boat 6 (wafer discharge). ), The substrate processing step is completed.

  In the substrate unloading process, it is desirable to keep the third and fourth open / close valves 59 and 61 open and continue to supply the purge gas into the process tube 2.

As described above, in the first embodiment, the pair of the first processing gas jet nozzles in which the first processing gas supply nozzle 35 for supplying the TEMAZ gas into the processing chamber 5 is formed in the same plane. 63a and 63b, and the TEMAZ gas is dispersed in two directions parallel to the wafers 7 stacked on the boat 6 through the first process gas jets 63a and 63b. a large amount supplied to the center of the wafer 7, at the center of the wafer 7 can be prevented from ZrO ₂ film is formed excessively thick, it is possible to improve the in-plane uniformity of the ZrO ₂ film.

Further, since the N ₂ gas is supplied into the processing chamber 5 so as to insert the TEMAZ gas, the flow path of the TEMAZ gas is limited, and the TEMAZ gas flows out between the wafer 7 and the inner tube 3. The TEMAZ gas is diluted with N ₂ gas, so that the concentrated supply of the TEMAZ gas to the center of the wafer 7 can be suppressed, and the ZrO ₂ film can be uniformly distributed in the surface. The property can be further improved.

  In the first embodiment, the first process gas jet nozzles 63a and 63b for dispersing the TEMAZ gas in two directions are provided in the first process gas supply nozzle 35, but the first process to be provided is provided. There may be three or more gas outlets, and the TEMAZ gas may be dispersed in three or more directions.

  The first and second inert gas supply nozzles 37 and 38 are provided with the first and second inert gas jets 65 and 66 for supplying an inert gas toward the center of the wafer 7. However, like the first process gas supply nozzle 35, it goes without saying that a plurality of inert gas outlets may be provided so that the inert gas can be dispersed in a plurality of directions.

  Next, a second embodiment of the present invention will be described with reference to FIG. 8 that are the same as those in FIG. 2 are given the same reference numerals, and descriptions thereof are omitted.

  In the second embodiment, a third processing gas can be supplied, for example, into the processing chamber 5 between the second processing gas supply nozzle 36 and the second inert gas supply nozzle 38 in the first embodiment. A third processing gas supply nozzle 71 is provided. The third process gas supply nozzle 71 has a plurality of third process gas jets 72 formed at equal intervals in the vertical direction, and processes from the third process gas jets 72 toward the center of the wafer 7. Gas is going to be ejected.

  In the second embodiment, since three processing gas supply nozzles for supplying a processing gas are provided in the processing chamber 5, a film forming process that requires three or more processing gases can be performed.

  It should be noted that the processing furnace 1 of the second embodiment may be used to perform the film forming process with two processing gases, in which case the second processing gas supply nozzle 36 is used as the third inert gas supply nozzle. can do.

(Appendix)
The present invention includes the following embodiments.

  (Supplementary note 1) A processing chamber for accommodating and processing a plurality of substrates, and a processing gas supply unit for supplying one or more processing gases into the processing chamber, and extending in the stacking direction of the substrates in the processing chamber. A processing gas supply unit having one or more processing gas supply nozzles, and an inert gas supply unit for supplying an inert gas into the processing chamber, and extending in the substrate stacking direction into the processing chamber. A plurality of inert gas supplies that are provided so as to sandwich the processing gas supply nozzle from both sides along the circumferential direction of the substrate and that have one or more inert gas jets that supply the inert gas into the processing chamber. An inert gas supply unit having a nozzle, and the processing gas supply nozzle has a plurality of openings that open in a plurality of directions in a plane parallel to the surface of the substrate and supplies the processing gas into the processing chamber. Processing gas ejection A substrate processing apparatus, wherein a provided.

  (Supplementary Note 2) A step of carrying a plurality of stacked substrates into the processing chamber, and a processing gas supply unit provided in the processing chamber and opened in one or more processing gas supply nozzles extending in the substrate stacking direction. A plurality of processing gas spouts that are opened in a plurality of directions within a plane parallel to the surface of the substrate to supply the processing gas into the processing chamber to process the substrate. And a step of unloading the processed substrate from the processing chamber.

  (Supplementary Note 3) A step of carrying a plurality of stacked substrates into the processing chamber, and a processing gas supply unit provided in the processing chamber and opened in one or more processing gas supply nozzles extending in the substrate stacking direction. A plurality of processing gas spouts that are opened in a plurality of directions within a plane parallel to the surface of the substrate to supply the processing gas into the processing chamber to process the substrate. And a step of carrying out the processed substrate from the processing chamber.

  (Supplementary Note 4) A processing chamber for storing and processing substrates stacked in multiple stages in a horizontal posture, a processing gas supply unit for supplying one or more processing gases into the processing chamber, and an inert gas in the processing chamber An inert gas supply unit to be supplied; and an exhaust unit for exhausting the processing chamber. The processing gas supply unit extends in a direction in which the substrates are stacked, and jets the processing gas in two different directions in the processing chamber. A plurality of inert gas supply nozzles, wherein the inert gas supply unit extends in the stacking direction of the substrates and includes a plurality of inert gases provided so as to sandwich the process gas supply nozzles along the circumferential direction of the substrates. A substrate processing apparatus having a gas supply nozzle.

  (Additional remark 5) The flow rate control part which adjusts the supply flow rate of an inert gas is further provided, and the film thickness of the film | membrane produced | generated on a board | substrate is controlled by adjusting the supply flow rate of an inert gas by this flow rate control part. The substrate processing apparatus of appendix 1 or appendix 4.

DESCRIPTION OF SYMBOLS 1 Processing furnace 2 Process tube 3 Inner tube 4 Outer tube 5 Processing chamber 6 Boat 7 Wafer 33 Preparatory chamber 35 1st processing gas supply nozzle 36 2nd processing gas supply nozzle 37 1st inert gas supply nozzle 38 2nd inert gas Supply nozzle 63 First process gas outlet 64 Second process gas outlet 65 First inert gas outlet 66 Second inert gas outlet 71 Third process gas supply nozzle 72 Third process gas outlet

Claims (3)

  A processing chamber that accommodates and processes a plurality of substrates, and a plurality of chambers that extend in the stacking direction of the substrates, open in a plurality of directions in a plane parallel to the surface of the substrate, and supply a processing gas into the processing chamber 1 or more process gas supply parts provided with the process gas jet nozzles, and a plurality of the process gas jet nozzles provided so as to be sandwiched from both sides along the circumferential direction of the substrate. A substrate processing apparatus, comprising: a plurality of inert gas supply units each having one or more inert gas jet openings.   A substrate carrying-in step for carrying a substrate into the processing chamber, a substrate processing step for processing the substrate by supplying an inert gas and one or more processing gases into the processing chamber, and a substrate after processing are carried out from the processing chamber. A method of manufacturing a semiconductor device having a substrate unloading process, wherein the process gas is supplied in a plurality of directions parallel to the surface of the substrate and the process gas flows from both sides. An inert gas is supplied to the semiconductor device.   A substrate carrying-in step for carrying a substrate into the processing chamber, a substrate processing step for processing the substrate by supplying an inert gas and one or more processing gases into the processing chamber, and a substrate after processing are carried out from the processing chamber. A substrate processing method including a substrate unloading step, wherein the processing gas is supplied in a plurality of directions parallel to the surface of the substrate and the flow of the processing gas is not allowed to flow from both sides. A substrate processing method comprising supplying an active gas.

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