JP2014056237A - アレイ基板およびその製造方法、表示装置 - Google Patents
アレイ基板およびその製造方法、表示装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000011159 matrix material Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 26
- 239000003990 capacitor Substances 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000007769 metal material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
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- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】当該アレイ基板は、2次元マトリクス状に配列された複数の画素領域と、前記2次元マトリクスの行方向に沿って延在するゲートラインおよび前記2次元マトリクスの列方向に沿って延在するデータラインと、を備え、各画素領域に画素電極が備えられ、前記アレイ基板がさらに少なくとも1本の共通電極線を備え、前記共通電極線が前記データラインに平行するように設置される。
【選択図】図4
Description
基板上に複数の画素領域を画成するために交差するゲートライン及びデータラインを形成し、且つ、各画素領域に画素電極を形成するステップと、
前記基板上に少なくとも1本の共通電極線を形成し、前記共通電極線が前記データラインに平行するように設置されるステップと、を含む。
6 共通電極
7 液晶
8 カラーフィルター基板
9 透明電極
10 アレイ基板
51 ソース電極
52 ドレイン電極
53 ゲート電極
54 活性層
55 ゲート絶縁層
Claims (11)
- 2次元マトリクス状に配列された複数の画素領域と、前記2次元マトリクスの行方向に沿って延在するゲートラインおよび前記2次元マトリクスの列方向に沿って延在するデータラインと、を備え、各画素領域に画素電極が備えられるアレイ基板であって、前記アレイ基板はさらに少なくとも1本の共通電極線を備え、前記共通電極線が前記データラインに平行するように設置されることを特徴とするアレイ基板。
- 各画素領域内に、さらにスイッチ素子である薄膜トランジスターを備え、前記薄膜トランジスターはゲート電極、ソース電極およびドレイン電極を備え、前記ゲート電極が対応するゲートラインに、前記ソース電極が対応するデータラインに、前記ドレイン電極が前記画素電極に接続され、
前記共通電極線及び前記データラインが前記ソース電極及びドレイン電極と同一層に形成されることを特徴とする請求項1に記載のアレイ基板。 - 各画素領域内に、さらに画素電極と共に蓄積容量を形成する共通電極を備え、前記共通電極線が前記共通電極に接続されることを特徴とする請求項1又は2に記載のアレイ基板。
- 前記共通電極線が各2本のデータラインの間に位置し、奇数列に位置する画素電極と偶数列に位置する画素電極とが1本の共通電極線を共用することを特徴とする請求項1〜3のいずれか1項に記載のアレイ基板。
- 前記共通電極線の配線方式が外部配線方式であることを特徴とする請求項1〜4のいずれか1項に記載のアレイ基板。
- 前記共通電極線の配線方式が内部配線方式であることを特徴とする請求項1〜4のいずれか1項に記載のアレイ基板。
- 基板上に2次元マトリクス状に配列された複数の画素領域と、前記2次元マトリクスの行方向に沿って延在するゲートラインおよび前記2次元マトリクスの列方向に沿って延在するデータラインと、を形成し、且つ、各画素領域に画素電極形成するステップと、
前記基板上に少なくとも1本の共通電極線を形成し、前記共通電極線を前記データラインに平行するように設置するステップと、を含むことを特徴とするアレイ基板の製造方法。 - 前記共通電極線及び前記データラインを同一層に形成することを特徴とする請求項7に記載のアレイ基板の製造方法。
- 前記共通電極線が各2本のデータラインに間に位置し、奇数列に位置する画素電極と偶数列に位置する画素電極とが1本の共通電極線を共用することを特徴とする請求項7又は8に記載のアレイ基板の製造方法。
- 前記共通電極線の配線方式が外部配線方式又は内部配線方式であることを特徴とする請求項7〜9のいずれか1項に記載のアレイ基板の製造方法。
- 請求項1〜6のいずれか1項に記載のアレイ基板を備える表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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CN201210340180.9 | 2012-09-13 | ||
CN201210340180.9A CN103676369A (zh) | 2012-09-13 | 2012-09-13 | 一种阵列基板及其制造方法、显示器件 |
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JP2014056237A true JP2014056237A (ja) | 2014-03-27 |
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JP2013172025A Pending JP2014056237A (ja) | 2012-09-13 | 2013-08-22 | アレイ基板およびその製造方法、表示装置 |
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Country | Link |
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US (1) | US9196736B2 (ja) |
EP (1) | EP2708941A1 (ja) |
JP (1) | JP2014056237A (ja) |
KR (1) | KR20140035292A (ja) |
CN (1) | CN103676369A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018143098A1 (ja) * | 2017-02-06 | 2018-08-09 | シャープ株式会社 | アクティブマトリクス基板および液晶表示装置 |
WO2018212084A1 (ja) * | 2017-05-18 | 2018-11-22 | シャープ株式会社 | 表示装置 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103197480B (zh) * | 2013-03-22 | 2015-07-01 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示面板 |
CN104298038B (zh) * | 2014-10-22 | 2017-03-15 | 深圳市华星光电技术有限公司 | 液晶显示面板及其阵列基板 |
CN104916650B (zh) * | 2015-06-18 | 2017-10-27 | 合肥鑫晟光电科技有限公司 | 一种双栅线阵列基板、显示面板及显示装置 |
CN105159001B (zh) * | 2015-10-20 | 2018-06-12 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示面板以及显示装置 |
KR102485387B1 (ko) * | 2016-01-20 | 2023-01-06 | 삼성디스플레이 주식회사 | 표시 장치 |
CN105974688A (zh) * | 2016-07-22 | 2016-09-28 | 京东方科技集团股份有限公司 | 阵列基板、显示面板和显示装置 |
CN106647078A (zh) * | 2017-01-11 | 2017-05-10 | 深圳市华星光电技术有限公司 | 像素结构及液晶显示器 |
CN108510949B (zh) * | 2017-02-28 | 2019-09-20 | 合肥京东方光电科技有限公司 | 一种液晶显示面板、液晶显示装置及其驱动方法 |
CN108415201A (zh) * | 2018-03-07 | 2018-08-17 | 京东方科技集团股份有限公司 | 一种显示面板及显示装置 |
CN110010100B (zh) * | 2019-05-10 | 2020-08-04 | 深圳市华星光电技术有限公司 | 像素驱动方法 |
CN111697010B (zh) * | 2020-07-15 | 2022-11-08 | 武汉华星光电技术有限公司 | 显示面板及其制备方法、显示装置 |
CN113741106A (zh) * | 2021-07-30 | 2021-12-03 | 北海惠科光电技术有限公司 | 阵列基板以及显示面板 |
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2012
- 2012-09-13 CN CN201210340180.9A patent/CN103676369A/zh active Pending
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2013
- 2013-06-28 EP EP13174192.8A patent/EP2708941A1/en not_active Withdrawn
- 2013-07-22 US US13/947,602 patent/US9196736B2/en active Active
- 2013-08-22 JP JP2013172025A patent/JP2014056237A/ja active Pending
- 2013-09-13 KR KR1020130110378A patent/KR20140035292A/ko active Search and Examination
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JPH04360127A (ja) * | 1991-06-07 | 1992-12-14 | Hitachi Ltd | 液晶表示装置 |
JPH10206869A (ja) * | 1997-01-24 | 1998-08-07 | Nec Corp | 液晶表示装置 |
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JP2009128907A (ja) * | 2007-11-23 | 2009-06-11 | Lg Display Co Ltd | 液晶表示装置 |
US20110102309A1 (en) * | 2009-11-05 | 2011-05-05 | Young-Joon Cho | Thin film transistor display panel and method of manufacturing the same |
US20120092321A1 (en) * | 2010-10-15 | 2012-04-19 | Chunghwa Picture Tubes, Ltd. | Liquid crystal display |
JP2012133367A (ja) * | 2010-12-22 | 2012-07-12 | Beijing Boe Optoelectronics Technology Co Ltd | Tft基板及びその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2018143098A1 (ja) * | 2017-02-06 | 2018-08-09 | シャープ株式会社 | アクティブマトリクス基板および液晶表示装置 |
WO2018212084A1 (ja) * | 2017-05-18 | 2018-11-22 | シャープ株式会社 | 表示装置 |
US10955695B2 (en) | 2017-05-18 | 2021-03-23 | Sharp Kabushiki Kaisha | Display device |
Also Published As
Publication number | Publication date |
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EP2708941A1 (en) | 2014-03-19 |
KR20140035292A (ko) | 2014-03-21 |
US9196736B2 (en) | 2015-11-24 |
CN103676369A (zh) | 2014-03-26 |
US20140070221A1 (en) | 2014-03-13 |
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