JP2013104128A - Deposition-preventive plate, sputtering apparatus and apparatus for manufacturing thin-film solar cell - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress deformation of a deposition-preventive plate during deposition.SOLUTION: A static elimination shield 6 is used for a sputtering apparatus that deposits fine particles of a target on a substrate to form a thin film, and disposed between the substrate and the target facing each other, wherein an opening 6a is formed in the static elimination shield 6 to allow the fine particles of the target to pass therethrough toward the substrate and a reinforcement rib 61 is provided along the whole circumference of the opening 6a.

Description

  The present invention relates to an adhesion-preventing plate used in a sputtering apparatus for forming a thin film on a substrate, and more particularly to an adhesion-preventing plate capable of suppressing deformation due to the influence of heat generated during film formation.

  Conventionally, in a sputtering apparatus for forming a thin film on a substrate, in order to prevent target fine particles excited by an electric field at the time of film formation from adhering to and depositing on the side surface of the chamber, etc. An adhesion-preventing plate for covering this part is used (see Patent Document 1).

  FIG. 5 is a cross-sectional view showing a main part configuration of a sputtering apparatus 101 provided with a conventional deposition preventing plate 106, and FIG. 6 is a plan view showing the deposition preventing plate 106 shown in FIG.

  As shown in FIG. 5, in the sputtering apparatus 101, the substrate S is transported in the transport direction X below the target T by the transport roller 103. In addition, as shown in FIG. 6, an opening 106 a for allowing the fine particles of the target T to pass through is formed in the deposition preventing plate 106, and this opening is formed between the target T and the substrate S in an opposed state. The deposition preventing plate 106 is arranged so that the portion 106a is located.

  Thus, by arranging the deposition preventing plate 106 between the target T and the substrate S so as to cover a portion other than the target surface S1 of the substrate S, the fine particles of the target T excited by the electric field at the time of film formation can be obtained. It is prevented from adhering and depositing on portions other than the substrate S.

JP 2002-226965 A (released on August 14, 2002)

  However, since the chamber 102 is heated at the time of film formation, the deposition preventing plate 106 may be deformed by the influence and may hang downward.

  Further, by repeating the film forming process, the fine particles of the target T adhere to and accumulate on the deposition preventing plate 106. In particular, a lot of fine particles of the target T are deposited on the central portion (broken line portion shown in FIG. 6) of the surface of the deposition preventing plate 106 along the long side of the opening 106a close to the center of the deposition preventing plate 106. For this reason, the weight of the central portion of the deposition preventing plate 106 increases, and the deposition preventing plate 106 may be deformed by the weight and hang downward.

  FIG. 7 is a schematic view showing a state in which the conventional deposition preventing plate 106 shown in FIG. 5 is deformed. 7 shows the state of the deposition preventing plate 106 when viewed from the direction of the conveyance direction X shown in FIG. 5 and FIG. As shown in FIG. 7, the deposition preventing plate 106 is disposed above the substrate S with its long side orthogonal to the transport direction X, and the lower surfaces of both ends of the short side are supported by the support unit 107. It is supported.

  If the broken line portion shown in FIG. 6 is deformed due to the heat generated during the film formation described above or the adhesion / deposition of the fine particles on the target T, and the deposition plate 106 hangs downward, it is directly below the deposition plate 106. The sacrificial deposition plate 106 may come into contact with the surface S1 of the substrate S passing through the substrate. As a result, in the sputtering apparatus 101 using the conventional deposition preventing plate 106, there is a problem that the film surface of the thin film formed on the processing surface S1 of the substrate S is scratched and appearance defects continuously occur. ing.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide an adhesion preventing plate capable of suppressing deformation during film formation and preventing damage to the thin film due to contact with the substrate. It is to be realized.

  In order to solve the above-described conventional problems, the deposition preventing plate according to the present invention is used in a sputtering apparatus that forms a thin film by depositing fine particles of a target material on a substrate, and the substrate and the target material in an opposed state are used. And an anti-adhesion plate in which an opening for allowing the fine particles of the target material to pass toward the substrate is formed, and reinforcing ribs are provided along the entire circumference of the opening. It is characterized by.

  In the above configuration, since the reinforcing ribs are provided along the entire circumference of the opening of the deposition preventing plate, the deposition preventing plate is deformed due to heat generated during film formation or adhesion / deposition of fine particles of the target material. It is possible to suppress this.

  Therefore, according to the above configuration, it is possible to realize a deposition preventing plate that can suppress deformation during film formation and prevent damage to the thin film due to contact with the substrate.

  In the deposition preventing plate according to the present invention, the reinforcing rib is provided corresponding to each side defining the opening, and the corresponding side and the reinforcing rib are arranged in parallel. It is preferable to be provided.

  In the above configuration, the reinforcing rib is provided corresponding to each side that defines the opening, and the corresponding side and the reinforcing rib are provided in parallel. It becomes possible to effectively reinforce the part of the adhesion-preventing plate whose strength has been reduced by forming.

  Therefore, according to said structure, a deformation | transformation of an adhesion prevention board can be effectively suppressed by a reinforcement rib.

  In the deposition preventing plate according to the present invention, it is preferable that the reinforcing rib corresponding to one side defining the opening is connected to a reinforcing rib corresponding to another side adjacent to the side.

  According to said structure, since the reinforcement rib corresponding to one side which prescribes | regulates an opening part is connected with the reinforcement rib corresponding to the other edge | side adjacent to the said edge | side, the intensity | strength of a deposition preventing plate is further increased. Can be improved.

  In the deposition preventing plate according to the present invention, the opening has a rectangular shape having a longitudinal direction, and at least the reinforcing rib provided on the surface along the longitudinal direction of the opening has a ladder shape or a lattice shape. It is preferable that

  In the above configuration, the reinforcing ribs are provided in a ladder shape or a lattice shape on the surface along the longitudinal direction of the opening. Here, in the adhesion prevention board in which the rectangular-shaped opening part which has a longitudinal direction was formed, the center part of the surface of the adhesion prevention board along the longitudinal direction of an opening part is the easiest to deform | transform normally. Therefore, by providing reinforcing ribs on the surface in a ladder shape or a lattice shape, the strength of this portion can be greatly improved.

  Therefore, according to said structure, a deformation | transformation of the adhesion prevention board in which the rectangular-shaped opening part which has a longitudinal direction was formed can be suppressed effectively.

  In order to solve the above-described problems, a sputtering apparatus according to the present invention includes the above-described deposition preventing plate.

  According to said structure, the sputtering apparatus which can suppress the deformation | transformation of the adhesion prevention board at the time of film-forming, and can prevent the damage of the thin film by contact with an adhesion prevention board and a board | substrate is realizable.

  In the sputtering apparatus according to the present invention, the target material is preferably silver.

  In general, silver (Ag) is more likely to adhere and deposit on the surface of the adhesion-preventing plate than a substance such as zinc oxide (ZnO). In the case of using Ag), the weight and thickness of the deposition preventive plate increase because silver (Ag) fine particles adhere and deposit on both sides of the deposition preventive plate. For this reason, in the sputtering apparatus for forming a silver (Ag) thin film, the deposition plate is particularly easily deformed, and as a result, the thin film is frequently damaged due to the contact between the deposition plate and the substrate.

  Therefore, by applying the above-mentioned deposition preventive plate to a sputtering apparatus that uses silver (Ag) as a target material and forms a thin film of silver (Ag) on a substrate, deformation of the deposition preventive plate during film formation is suppressed. This is particularly effective because the thin film can be prevented from being damaged by the contact between the deposition preventing plate and the substrate.

  In order to solve the above-described problems, a thin-film solar cell manufacturing apparatus according to the present invention includes the above-described sputtering apparatus.

  In general, since a substrate having a side of 1.0 m or more is used for manufacturing a thin film solar cell, a large deposition plate is used to form an opening corresponding to the size of the substrate. It is done. Along with this, the weight of the deposition preventing plate increases, so that the deposition preventing plate easily deforms due to heat generated during film formation or adhesion / deposition of fine particles of the target material.

  Therefore, by applying the above-described deposition plate to a thin-film solar cell manufacturing apparatus, deformation of the deposition plate during film formation is suppressed, and damage to the thin film due to contact between the deposition plate and the substrate is prevented. This is particularly effective.

  Therefore, according to said structure, the thin film solar cell manufacturing apparatus which can suppress the damage of the thin film by contact with an adhesion prevention board and a board | substrate is suppressed, suppressing the deformation | transformation of the adhesion prevention board at the time of film-forming. can do.

  As described above, the deposition preventing plate according to the present invention is used in a sputtering apparatus that forms a thin film by depositing fine particles of a target material on a substrate, and is disposed between the substrate and the target material in an opposed state. And an anti-adhesion plate in which an opening for allowing fine particles of the target material to pass toward the substrate is formed, and reinforcing ribs are provided along the entire circumference of the opening. .

  Therefore, according to the adhesion-preventing plate according to the present invention, it is possible to provide an adhesion-preventing plate that can suppress deformation during film formation and prevent damage to the thin film due to contact with the substrate. Play.

It is sectional drawing which shows the principal part structure of the sputtering device which concerns on embodiment. It is sectional drawing which shows the film | membrane structure of a thin film solar cell. It is a top view which shows the external appearance structure of the static elimination shield shown by FIG. It is a top view which shows the external appearance structure of the static elimination shield used for the comparative experiment. It is sectional drawing which shows the principal part structure of the sputtering device provided with the conventional adhesion prevention board. It is a top view which shows the conventional adhesion prevention board shown by FIG. It is the schematic which shows the state which the conventional adhesion prevention board shown by FIG. 5 deform | transformed.

  An example of the embodiment of the deposition preventing plate according to the present invention will be described below with reference to FIGS. In the present embodiment, a sputtering down type sputtering apparatus provided with the deposition preventing plate according to the present invention will be described.

<Configuration of Sputtering Apparatus 1>
First, the principal part structure of the sputtering device 1 which concerns on this embodiment is demonstrated with reference to FIGS. FIG. 1 is a cross-sectional view showing the main configuration of a sputtering apparatus 1 according to this embodiment.

  As shown in FIG. 1, the sputtering apparatus 1 includes a chamber 2, a plurality of transport rollers 3, a head 4, a heater 5, and a static elimination shield (protection plate) 6. Hereinafter, each structure with which the sputtering apparatus 1 is provided is demonstrated in order.

(Chamber 2)
The chamber 2 is a space for performing a film forming process on the surface (upper surface) S <b> 1 of the substrate S carried in by the transport roller 3. The chamber 2 is depressurized from the atmospheric pressure by a high vacuum exhaust device (not shown) or the like, and is maintained in a vacuum state.

  One of the side surfaces of the chamber 2 is formed with a carry-in port 21 for carrying the substrate S carried in the carrying direction X indicated by the arrow in the drawing into the chamber 2. Further, a carry-out port 22 for carrying out the substrate S is formed on the side surface of the chamber 2 facing the side surface on which the carry-in port 21 is formed. A carry-in door 23 and a carry-out door 24 are respectively attached to the carry-in port 21 and the carry-out port 22, and the chamber 2 and the outside are separated from each other by the carry-in door 23 and the carry-out door 24. ing.

  The chamber 2 may be connected to a load lock chamber (not shown) in order to keep the inside of the chamber 2 in a vacuum state and not open to the atmosphere. By connecting the chamber 2 to the load lock chamber and opening and closing the loading door 23 or the unloading door 24 in a state where the load lock chamber is evacuated, the chamber 2 is maintained in a vacuum state while being kept in a vacuum state. The substrate S can be carried into or out of the chamber 2.

  Further, the chamber 2 may be connected to an etching apparatus for performing an etching process or another sputtering apparatus.

(Conveying roller 3)
The transport roller 3 is a horizontal transport type transport mechanism that transports the substrate S carried into the chamber 2 in a transport direction X with the surface S1 to be processed facing upward. The transport rollers 3 are arranged in parallel in the horizontal direction, and transport the substrate S from the carry-in port 21 toward the carry-out port 22.

  Further, the transport roller 3 is connected to a drive unit (not shown) such as a motor that rotationally drives the transport roller 3 and its rotation is controlled.

  In the present embodiment, the transport mechanism that transports the substrate S is realized by using a plurality of transport rollers 3. However, in addition to the transport rollers 3, for example, a transport arm or belt that supports the substrate S from below. The transport mechanism may be realized using a conveyor or the like.

(Head 4)
The head 4 discharges fine particles such as atoms or molecules constituting the target (target material) T toward the processing surface S1 of the substrate S arranged below. For the target T, for example, zinc oxide (ZnO), silver (Ag), or the like is used. The head 4 is provided on the upper surface of the chamber 2 and includes an electrode shield 41 and a magnet 42.

  The electrode shield 41 is for limiting the discharge space during sputtering to the space where the substrate S is disposed, and is provided on the side surface side of the target T.

  Further, the sputtering apparatus 1 employs a magnetron sputtering method in which a magnetic field is applied to the surface of the target T in order to improve the film forming speed, and a magnet 42 is attached to the upper portion of the target T.

  Further, a high-frequency power source 43 for generating a discharge necessary for sputtering is connected to the head 4 via a wiring 44, and a low-pass for noise reduction is provided between the head 4 and the power source 43. A filter 45 is provided.

(Heater 5)
The heater 5 heats the substrate S conveyed below the head 4 to a predetermined temperature. The heater 5 can be appropriately set to an optimum temperature according to the type of the target T to be used, and is arranged so as to heat the substrate S from the placement surface (lower surface) S2 side of the substrate S. Yes.

(Static Shield 6)
The neutralization shield 6 prevents the target fine particles excited by the electric field during film formation from adhering to and depositing on portions other than the substrate S such as the side surface of the chamber 2 and suppresses the spread of plasma discharge generated in the vicinity of the target T. To do.

  The static elimination shield 6 is formed with an opening 6a (see FIG. 3) for allowing fine particles of the target T to pass toward the processing surface S1 of the substrate S. The opening 6a is positioned between the two. Specifically, the static elimination shield 6 is arranged such that its long side is orthogonal to the transport direction X, and the lower surfaces of both ends of the short side are supported by support portions (not shown).

  By disposing the static elimination shield 6 so as to cover the portion other than the target surface S1 of the substrate S by the static elimination shield 6, the fine particles of the target T excited by the electric field during film formation adhere to and deposit on the portion other than the substrate S. Can be prevented.

  In addition, by forming the static elimination shield 6 from a metal such as anodized (aluminum surface anodization) or a stainless alloy, it is possible to suppress the spread of plasma discharge generated in the vicinity of the target T.

  In the present embodiment, the static elimination shield 6 is supported by a support portion (not shown) at an interval of about 3.0 cm to 5.0 cm from the target T. Further, the static elimination shield 6 is supported by the support portion at an interval of about 1.0 cm to 2.0 cm from the surface S1 of the substrate S.

  Here, the case where the sputtering apparatus 1 is used for manufacturing a thin film solar cell will be described as an example. FIG. 2 is a cross-sectional view showing the film structure of the thin film solar cell 30. As shown in FIG. 2, the thin-film solar cell 30 has a structure in which a surface electrode 31, a photoelectric conversion layer 32, a transparent conductive layer 33, and a back electrode layer 34 are stacked in this order on a substrate S. It is.

  When the sputtering apparatus 1 is used to manufacture the thin film solar cell 30 having such a film structure, the chamber 2 becomes high temperature during film formation, and the static elimination shield 6 is heated to about 130 ° C. or higher and about 1600 ° C. or lower. . For this reason, the static elimination shield 6 expands due to the influence of heat, and may be deformed so as to hang downward due to its own weight.

  In particular, in manufacturing a thin film solar cell, a substrate S having a size of 1.0 m or more on each side is generally used. Therefore, the long side of the opening 6a corresponding to the substrate S having such a size is 1.0 m or more, and it is necessary to use a large static elimination shield 6 that can form the opening 6a. For this reason, since the weight of the static elimination shield 6 increases, the static elimination shield 6 is easily deformed by heat generated during film formation.

  Further, the particles of the target T adhere to and accumulate on the static elimination shield 6 by increasing the number of film forming processes. In particular, silver (Ag) used for film formation of the back electrode layer 34 is easier to adhere and deposit on the static elimination shield 6 than a substance such as zinc oxide (ZnO) used for film formation of the transparent conductive layer 33. Also, the wraparound has a large property.

  Therefore, when the back electrode layer 34 is formed, the weight and thickness of the static elimination shield 6 are increased by attaching and depositing silver (Ag) fine particles on both sides of the static elimination shield 6. Accordingly, the above-described deformation of the static elimination shield 6 is promoted.

  As described above, when the static elimination shield 6 is deformed due to the heat generated during film formation or the adhesion / deposition of fine particles such as silver (Ag) and hangs downward, it is directly below the static elimination shield 6 (1.0 cm or more). , The slidable static elimination shield 6 comes into contact with the surface S1 of the substrate S that passes through the substrate S passing through about 2.0 cm or less. As a result, the film surface of the silver (Ag) thin film formed on the substrate S is scratched, causing a phenomenon in which appearance defects continuously occur.

  Therefore, in the static elimination shield 6 according to the present embodiment, in order to prevent deformation of the static elimination shield 6 caused by heat at the time of film formation or adhesion / deposition of fine particles on the target T, the entire opening 6a of the static elimination shield 6 is prevented. Reinforcing ribs 61 are provided along the circumference.

  FIG. 3 is a plan view showing an external configuration of the static elimination shield 6 shown in FIG. As shown in FIG. 3, the static elimination shield 6 is a rectangular plate-like member, and an opening 6 a for allowing fine particles of the target T to pass toward the processing surface S <b> 1 of the substrate S is formed at the center. Yes. In the present embodiment, corresponding to the processing target surface S1 of the substrate S being rectangular, an opening 6a having a rectangular shape (rectangular shape having a longitudinal direction) having substantially the same size is formed.

  Further, in order to prevent deformation of the static elimination shield 6 caused by heat at the time of film formation described above and adhesion / deposition of fine particles on the target T, the static elimination shield 6 has a reinforcing rib along the entire circumference of the opening 6a. 61 is provided.

  In the present embodiment, reinforcing ribs 61 that are continuous to the outer edge portion of the static elimination shield 6 are provided so as to surround the static elimination shield 6 as a whole.

  Further, on the surface of the static elimination shield 6, reinforcing ribs 61 corresponding to the respective sides are provided in parallel with the respective sides defining the opening 6 a. The reinforcing ribs 61 are connected to adjacent reinforcing ribs 61 to form frame-shaped reinforcing ribs 61 that surround the opening 6a.

  By providing such a reinforcing rib 61, it is possible to effectively reinforce the portion of the static elimination shield 6 whose strength has been reduced by forming the opening 6a, and to suppress deformation of the static elimination shield 6.

  Further, the neutralizing shield 6 is provided with a reinforcing rib 61 in a ladder shape along two long sides defining the opening 6a. Here, in the static elimination shield 6 in which the rectangular opening 6a is formed as in the present embodiment, the load is normally applied to the central portion of the surface along the long side of the opening 6a. Is most easily deformed. Therefore, the strength of this part can be greatly improved by providing the reinforcing ribs 61 in a ladder shape or a lattice shape on the surface including the central portion.

  Therefore, according to said structure, a deformation | transformation of the static elimination shield 6 in which the rectangular-shaped opening part which has a longitudinal direction was formed can be suppressed effectively.

  Moreover, the strength of the static elimination shield 6 can be improved by connecting the reinforcing ribs 61 provided on the static elimination shield 6 as in this embodiment.

  In addition, the arrangement | positioning of the reinforcement rib 61 provided in the static elimination shield 6 is not specifically limited, The reinforcement rib 61 should just be provided on the static elimination shield 6 along the perimeter of the opening part 6a, respectively. Therefore, it can be appropriately changed based on various factors such as the shape, size, material, and shape of the opening 6a to be formed.

<Comparison experiment>
Next, a comparative experiment using the static elimination shield 6 according to the present embodiment will be described with reference to FIG.

  FIG. 4 is a plan view showing an external configuration of the static elimination shield 16 used in the comparative experiment. The static elimination shield 6 according to this embodiment shown in FIG. 3 has a configuration in which reinforcing ribs 61 are provided along the entire circumference of the opening 6a. On the other hand, as shown in FIG. 4, the static elimination shield 16 used in the comparative experiment includes reinforcing ribs along only two long sides facing the opening 16a among the sides defining the opening 16a. 62 is provided, and differs greatly from the static elimination shield 6 according to the present embodiment in that the reinforcing rib 62 is not provided along two opposing long and two short sides.

  Specifically, the neutralizing shield 16 is provided with reinforcing ribs 62 on the long side of the outer edge portion of the static eliminating shield 16, and no reinforcing rib 62 is provided on the short side.

  Further, on the surface of the static elimination shield 16 along two opposing long sides of the opening 16a, three reinforcing ribs 62 arranged in a direction orthogonal to the long side of the opening 16a are provided, respectively. The reinforcing rib 61 is connected to the outer edge of the shield 16.

  In addition, the static elimination shield 6 and the static elimination shield 16 which is a comparative example differ only in the arrangement structure of the reinforcing rib 61, and the other structure is the same.

  In this comparative experiment, a thin-film solar cell manufacturing apparatus (sputtering apparatus) including the static elimination shield 16 as a comparative example and a thin-film solar cell manufacturing apparatus (sputtering apparatus) including the static elimination shield 6 according to the present embodiment are used. Thus, the back electrode layer 34 shown in FIG. 2 was actually formed.

  When a thin film of silver (Ag) is formed on the substrate S using a thin film solar cell manufacturing apparatus provided with the static elimination shield 16 as a comparative example, the expansion of the static elimination shield 16 and silver (Ag) when a certain time has elapsed. After the deposition / deposition of the fine particles was confirmed, and the number of film forming processes was repeated, the static elimination shield 16 was gradually deformed so as to hang downward.

  As a result, in the thin-film solar cell manufacturing apparatus including the static elimination shield 16 as a comparative example, the static elimination shield 16 and the substrate S come into contact with each other when a predetermined time has elapsed, and the thin film formed on the substrate S There was a phenomenon in which the surface was scratched and appearance defects continuously occurred.

  On the other hand, when a thin film of silver (Ag) is formed on the substrate S under the same conditions using the thin-film solar cell manufacturing apparatus provided with the static elimination shield 6 according to this embodiment, when a certain time has elapsed. The expansion of the static elimination shield 6 and the adhesion / deposition of silver (Ag) fine particles were confirmed, but after that, the deformation of the static elimination shield 6 so as to come into contact with the substrate S was observed even if the number of film forming processes was repeated. There wasn't.

  As a result, in the thin-film solar cell manufacturing apparatus including the static elimination shield 6 according to the present embodiment, deformation of the static elimination shield 6 is suppressed, and even if a predetermined time elapses, the film surface of the thin film formed on the substrate S It was possible to avoid a phenomenon in which scratches were generated and appearance defects continuously occurred.

  From this comparative experiment, it was confirmed that according to the static elimination shield 6, it is possible to suppress deformation during film formation and prevent damage to the thin film due to contact between the static elimination shield 6 and the substrate S.

<Summary of Embodiment>
As described above, the static elimination shield 6 according to the present embodiment is used in the sputtering apparatus 1 that forms the thin film by depositing the fine particles of the target T on the substrate S, and is disposed between the substrate S and the target T in the facing state. The static elimination shield 6 is disposed and formed with an opening 6a for allowing fine particles of the target T to pass toward the substrate S, and reinforcing ribs 61 are provided along the entire circumference of the opening 6a. .

  In this configuration, since the reinforcing rib 61 is provided along the entire circumference of the opening 6a of the static elimination shield 6, the static elimination shield 6 is caused by heat generated during film formation or adhesion / deposition of fine particles on the target T. It becomes possible to suppress deformation.

  Therefore, according to the present embodiment, it is possible to realize the static elimination shield 6 that can suppress deformation during film formation and prevent damage to the thin film due to contact between the static elimination shield 6 and the substrate S.

  The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and the embodiments can be obtained by appropriately combining technical means disclosed in different embodiments. The form is also included in the technical scope of the present invention.

  The present invention can be suitably used for a film forming apparatus such as a sputtering method, a vacuum evaporation method, or a CVD method.

DESCRIPTION OF SYMBOLS 1 Sputtering apparatus 2 Chamber 3 Conveyance roller 4 Head 5 Heater 6 Static elimination shield (adhesion prevention board)
6a Opening 16 Static elimination shield (protection plate)
30 Thin Film Solar Cell 61 Reinforcement Rib 62 Reinforcement Rib S Substrate S1 Surface to be treated S2 Surface to be placed T Target (target material)
X Transport direction

Claims (7)

It is used in a sputtering apparatus that forms a thin film by depositing fine particles of a target material on a substrate, and is disposed between the substrate and the target material in an opposing state, and the fine particles of the target material are directed toward the substrate. An adhesion-preventing plate having an opening for allowing passage;
A protection plate, wherein reinforcing ribs are provided along the entire circumference of the opening.   The reinforcing rib is provided corresponding to each side defining the opening, and the corresponding side and the reinforcing rib are provided in parallel. 1. The adhesion prevention board of 1.   The said reinforcement rib corresponding to one edge | side which prescribes | regulates the said opening part is connected with the reinforcement rib corresponding to the other edge | side adjacent to the said edge | side, The adhesion prevention of Claim 1 or 2 characterized by the above-mentioned. Board. The opening is a rectangular shape having a longitudinal direction;
4. The adhesion-preventing plate according to claim 1, wherein at least the reinforcing rib provided on a surface along the longitudinal direction of the opening has a ladder shape or a lattice shape. 5.   A sputtering apparatus comprising the deposition preventing plate according to any one of claims 1 to 4.   The sputtering apparatus according to claim 5, wherein the target material is silver.   An apparatus for manufacturing a thin-film solar cell, comprising the sputtering apparatus according to claim 5.

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