JP2013080857A - Method for manufacturing device with solid-state component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a device with a solid-state component which is less apt to be damaged.SOLUTION: A method for manufacturing a device with a solid-state component 4 comprises the steps of: preparing a first substrate 1; forming a peeling layer 2 on the first substrate 1; forming a second substrate 3 so as to be peelable on the peeling layer 2 formed on the first substrate 1; forming the solid-state component 4 on the second substrate 3 and on the second substrate 2 of the first substrate 1 on which the peeling layer 2 was formed; and peeling the peeling layer 2 and the first substrate 1 from the second substrate 3 by applying an external force to either or both of the second substrate 3 of the first substrate 1 on which the solid-state component 4, the second substrate 3, and the peeling layer 2 were formed and/or the peeling layer 2.

Description

  The present invention relates to a method for manufacturing a device having a solid element.

Conventionally, when manufacturing a device having a solid element, a rigid glass substrate has been used as a substrate of the device. However, considering the weight and impact resistance, the glass substrate is not necessarily suitable for use in a device having a solid element. Therefore, in recent years, a flexible plastic substrate is being used instead of the glass substrate. On the other hand, the plastic substrate has a problem that it is easily bent with respect to the glass substrate, and it is difficult to accurately produce a device having a solid element by applying the plastic substrate to a conventional process as it is. I came.
Under such circumstances, there is a method in which a solid element is formed on a glass substrate which is not easily bent through a release layer, laser light is irradiated to the release layer to cause peeling, and the peeled solid element is transferred to a plastic substrate. There is (for example, Patent Document 1).

Japanese Patent Laid-Open No. 10-125930

However, the above method has a problem that the solid element is damaged because the release layer is irradiated with laser light in a state where the solid element is formed on the glass substrate. In addition, since the release layer is peeled off by irradiating the release layer with laser light, the release layer remains on the plastic substrate, and the solid element is damaged by the remaining release layer.
An object of this invention is to provide the manufacturing method of the device which has a solid element with which a solid element is hard to damage.

  A method for manufacturing a device having a solid element according to the present invention includes a first substrate preparation step for preparing a first substrate, a release layer forming step for forming a release layer on the first substrate, and a first step in which the release layer is formed. A second substrate forming step for forming the second substrate on the release layer of the one substrate in a peelable manner; and a solid element formation for forming the solid device on the second substrate of the first substrate on which the second substrate and the release layer are formed. By applying an external force to one or both of the process, the solid substrate, the second substrate, and the second substrate and the release layer of the first substrate on which the release layer is formed, the release layer and the first substrate from the second substrate And a peeling step for peeling off.

  A method for manufacturing a device having a solid element according to the present invention includes a second substrate preparation step for preparing a second substrate, a release layer forming step for forming a release layer on the second substrate in a peelable manner, and a release layer formed A first substrate forming step of forming a first substrate on the release layer of the second substrate formed, a solid element forming step of forming a solid element on the second substrate on which the first substrate and the release layer are formed, and a solid Peeling the peeling layer and the first substrate from the second substrate by applying an external force to one or both of the element, the peeling layer, and the second substrate and the peeling layer of the second substrate on which the first substrate is formed. And a process.

  According to this invention, since the release layer hardly remains on the second substrate after the release layer is peeled off from the second substrate, it is possible to obtain an effect that the solid element can be prevented from being damaged.

  In the method for manufacturing a device having a solid element according to the present invention, since the release layer hardly remains on the second substrate after the release layer is peeled off from the second substrate, it is possible to prevent the solid element from being damaged. be able to.

It is process drawing which shows an example of the manufacturing method of the device which has a solid element of this invention. It is process drawing which shows an example of the manufacturing method of the device which has a solid element of this invention. It is process drawing which shows an example of the manufacturing method of the device which has a solid element of this invention.

Hereafter, the manufacturing method of the device which has a solid element of this invention is demonstrated in detail.

An embodiment of a method for producing a device having a solid element of the present invention will be described with reference to the drawings. In the present invention, the substrate of the device having a solid element is the second substrate, and the substrate supporting the second substrate is the first substrate.
1A to 1E are process diagrams showing an example of a method for manufacturing a device having a solid element.
First, the first substrate 1 is prepared (first substrate preparation step) (FIG. 1 (1a)). Next, the release layer 2 is formed on the first substrate 1 (release layer forming step) (FIG. 1 (1b)). Next, the second substrate 3 is formed so as to be peelable on the peeling layer 2 of the first substrate 1 on which the peeling layer 2 is formed (second substrate forming step) (FIG. 1 (1c)). Next, the solid element 4 is formed on the second substrate 3 of the first substrate 1 on which the second substrate 3 and the release layer 2 are formed (solid element forming step) (FIG. 1 (1d)). At this time, the solid element forming step may include a heating step. Next, by applying an external force to one or both of the solid substrate 4, the second substrate 3, and the second substrate 3 and the release layer 2 of the first substrate 1 on which the release layer 2 is formed, The peeling layer 2 and the first substrate 1 are peeled off (peeling step) (FIG. 1 (1e)). At this time, the external force is not particularly limited, and examples thereof include a force applied by a machine or a human.

2 (2a) to 2 (2e) are process diagrams showing an example of a method for manufacturing a device having a solid element.
First, the second substrate 3 is prepared (second substrate preparation step) (FIG. 2 (2a)). Next, the release layer 2 is formed on the second substrate 3 so as to be peelable (release layer forming step) (FIG. 2 (2b)). Next, the first substrate 1 is formed on the release layer 2 of the second substrate 3 on which the release layer 2 is formed (first substrate forming step) (FIG. 2 (2c)). Next, a solid element 4 is formed on the second substrate 3 on which the first substrate 1 and the release layer 2 are formed (solid element forming step) (FIG. 2 (2d)). At this time, the solid element forming step may include a heating step. Next, by applying an external force to one or both of the second substrate 3 and the release layer 2 of the second substrate 3 on which the solid element 4, the first substrate 1, and the release layer 2 are formed, The peeling layer 2 and the first substrate 1 are peeled off (peeling step) (FIG. 2 (2e)). At this time, the external force is not particularly limited, and examples thereof include a force applied by a machine or a human.

  According to the present embodiment, since the second substrate and the release layer are only detachably adhered, the release layer hardly remains on the second substrate after the release layer is peeled off from the second substrate. Steps due to the release layer are unlikely to occur. For this reason, it is possible to suppress the deformation of the second substrate due to an external force applied to the step during manufacturing or use of the device, so that it is possible to obtain an effect that the solid element can be prevented from being damaged. In addition, when a pressure sensitive adhesive having a heating process in the solid element forming process and having high dimensional stability is used for the release layer, the solid element is hardly damaged.

3 (3a) to 3 (e) are process diagrams showing an example of a method for manufacturing a device having a solid element.
1 except that a release layer 2 and a second substrate 3 are provided on both sides of the first substrate 1.

  According to the present embodiment, even if external force is applied, the second substrate absorbs external force, so that it is difficult for external force to be applied to the first substrate, so that the first substrate is damaged. The first substrate can be reused repeatedly.

<First embodiment>
Hereinafter, a first embodiment in a method for manufacturing a device having a solid element of the present invention will be described.

  1st embodiment of the manufacturing method of the device which has a solid element of this invention is the 1st board | substrate preparation process which prepares the 1st board | substrate 1, the peeling layer formation process which forms the peeling layer 2 on a 1st board | substrate, and peeling A second substrate forming step of detachably forming the second substrate 3 on the release layer 2 of the first substrate 1 on which the layer 2 is formed; and a first substrate 1 on which the second substrate and the release layer 2 are formed. One of the solid element forming step of forming the solid element 4 on the two substrates 3, and the second substrate 3 and the release layer 2 of the first substrate 1 on which the solid element 4, the second substrate 3, and the release layer 2 are formed. A peeling step of peeling the peeling layer 2 and the first substrate 1 from the second substrate 3 by applying an external force to one or both.

1. First substrate preparation step The first substrate preparation step prepares the first substrate.

1-1. First substrate The first substrate 1 supports the following second substrate 3. Therefore, the first substrate 1 is preferably rigid. The degree of rigidity is generally highly dependent on the thickness. Therefore, the thickness of the first substrate 1 is preferably 0.5 mm or more, and more preferably 0.7 mm or more. If the thickness of the substrate is 0.5 mm or more, and further 0.7 mm or more, the general substrate supports the second substrate 3 and prevents the second substrate 3 from being bent in a solid element forming process or the like. This is because it is considered as rigid as possible. The material of the first substrate 1 is not particularly limited as long as the second substrate 3 can be supported, and examples thereof include metals, ceramics, and glass. Examples of the metal include a single metal such as iron, copper, or gold, and an alloy such as stainless steel. Examples of the ceramic include silicon carbide and boron nitride. Examples of the glass include alkali-free glass and quartz glass.

  The size of the first substrate is not particularly limited as long as the second substrate can be supported. However, it is preferable that the size of the first substrate is larger than that of the second substrate because handling during manufacture is easy.

2. Release layer forming step The release layer forming step is to form a release layer on the first substrate.

2-1. Peeling layer The peeling layer 2 adheres to the first substrate 1 and the second substrate 3. The release layer 2 is not particularly limited as long as it can adhere to the first substrate 1 and the second substrate 3. Examples of inorganic adhesives include silicone adhesives and ceramic adhesives. Examples of organic adhesives include polymer adhesives and rubber adhesives. Examples of the inorganic-organic hybrid pressure-sensitive adhesive include silicone polymer pressure-sensitive adhesives. In addition, the adhesive etc. which mixed the inorganic adhesive and the organic adhesive can be used.

  When the solid element forming step includes a heating step, it is preferable to use an adhesive having high dimensional stability. By using an adhesive having high dimensional stability, it is possible to suppress the dimensional change of the second substrate due to heating. “High dimensional stability” in the present invention means a case in which a dimensional fluctuation range is 5 μm or less when 150 ° C. heating is performed for 3 hours on a substrate having a size of 150 mm □. The adhesive having high dimensional stability is not particularly limited. However, it is preferable to use a silicone polymer adhesive because the characteristics of the interface between the release layer and the second substrate can be easily controlled simply by changing the silicon substituent. It is more preferable to use polydimethylsiloxane having an appropriate adhesive strength to glass and plastic.

  The method for producing a device having a solid element of the present invention has a remarkable effect that the solid element is not easily damaged, particularly when a pressure sensitive adhesive having a heating process and a high dimensional stability is used in the separation element forming process. Have. The reason is as follows. The method for producing a device having a solid element of the present invention is such that the second substrate and the release layer are only detachably adhered so that the release layer is attached to the second substrate after the release layer is peeled off from the second substrate. Since it is difficult to remain, a step due to the remaining release layer is unlikely to occur. For this reason, it is possible to prevent the second substrate from being deformed by applying an external force to the step during manufacture or use of the device, so that the solid element can be prevented from being damaged. In addition, when a pressure sensitive adhesive having a high dimensional stability is used for the release layer in the solid element forming process, the dimensional change of the second substrate is caused by the high dimensional stability adhesive during the heating process. This is because the second substrate can be remarkably suppressed from being deformed.

  For example, when polydimethylsiloxane is used for the release layer, the release layer may be formed by dissolving polydimethylsiloxane in a solvent, applying the solution to a substrate, drying it, removing the solvent, or crosslinking and curing. Since it differs depending on the type of pressure-sensitive adhesive used for the layer, there is no particular limitation.

  The adhesive force between the second substrate and the release layer described later is not particularly limited as long as the adhesive force is such that the second substrate and the release layer can be peeled off. In the present invention, “peelable” means 1N / 25 mm or less in a 90 ° peel test (peel rate is 300 mm / min). If the adhesive strength is too weak, the possibility of peeling and damage to the second substrate increases during the manufacturing process, and if the adhesive strength is too strong, the peeling layer is damaged in the peeling step and the possibility of leaving the peeling layer on the second substrate increases. The adhesive strength is preferably 0.001 N / 25 mm to 0.1 N / 25 mm in a 90 ° peel test (peel rate is 300 mm / min), and is 0.005 N / 25 mm to 0.05 N / 25 mm. It is more preferable, and it is still more preferable that it is 0.01N / 25mm-0.03N / 25mm. Usually, the release layer is formed in the same size as the second substrate, but the release layer may be formed in a pattern in order to adjust the adhesive force.

3. Second substrate forming step In the second substrate forming step, the second substrate 3 is detachably formed on the release layer 2 of the first substrate 1 on which the release layer 2 is formed.

3-1. Second substrate The second substrate 3 is used as a substrate of a device having the solid element 4.
The material of the second substrate 3 is not particularly limited as long as it is plastic because it is lightweight, is strong against external impacts and is flexible and is suitable as a substrate for a device having a solid element. Examples of the plastic include polyolefin such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA), cyclic polyolefin, modified polyolefin, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, polyimide, Polyamideimide, polycarbonate, poly- (4-methylbenten-1), ionomer, acrylic resin, polymethyl methacrylate, acrylic-styrene copolymer (AS resin), butadiene-styrene copolymer, polio copolymer (EVOH) ), Polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polypropylene terephthalate (PBT), precyclohexane terephthalate (PCT) and other polyesters, polyethers, Ether ketone (PEK), polyether ether ketone (PEEK), polyether imide, polyacetal (POM), polyphenylene oxide, modified polyphenylene oxide, polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, Other fluororesins, styrene, polyolefin, polyvinyl chloride, polyurethane, fluororubber, chlorinated polyethylene, and other thermoplastic elastomers, epoxy resins, phenol resins, urea resins, melamine resins, unsaturated polyesters, Examples thereof include silicone resin, polyurethane, and the like, and copolymers, blends, and polymer alloys mainly composed of these. Moreover, what laminated | stacked 1 type or 2 types or more among these may be used. Moreover, it can select suitably in light of a use.

  The size of the second substrate is, for example, when the device having the solid element produced by the manufacturing method of the present invention is used for a small mobile phone, the second substrate is small, and when the device is used for a large television, the second substrate is Since it can be appropriately selected depending on the application such as increasing the size, it is not particularly limited. Also, the thickness of the second substrate can be appropriately selected depending on the use, and is not particularly limited. However, if it is too thin, the strength may be insufficient, and if it is too thick, the advantages of plastic such as light weight and flexibility may be impaired. Therefore, it is preferably 10 μm to 1 mm, more preferably 30 μm to 500 μm, and still more preferably 50 μm to 200 μm.

  The second substrate may be formed on both sides of the first substrate via a release layer. By forming the second substrate on both sides of the first substrate via the release layer, the first substrate can be prevented from being damaged in the manufacturing process, and the number of times that the first substrate can be reused can be increased. it can. Further, when the solid element manufacturing process includes a heating process, the second substrate is formed on both sides of the first substrate via the release layer, so that only one side of the first substrate in the direction of forming the solid element is peeled off. There is an effect that the dimensional change can be made smaller than when the second substrate is provided via the layer. The effect is considered to be because the influence of the dimensional change of the peeling layer and the second substrate due to heating cancels out not only on one side of the first substrate but also on both sides. Note that “both sides of the first substrate” means the side of the first substrate on which the release layer and the like are laminated and the side opposite to the surface.

4). Solid Element Formation Step The solid element formation step is to form the solid element 4 on the second substrate 3 of the first substrate 1 on which the second substrate 3 and the release layer 2 are formed.

4-1. Solid element Solid element 4 is not particularly limited, but includes a thin film transistor, a thin film diode, an organic semiconductor element, an oxide semiconductor element, another thin film semiconductor element, a thin film circuit including the semiconductor element, a solar cell, and an image sensor. Photoelectric conversion elements, switching elements, memories, actuators such as piezoelectric elements, etc., micromirrors, magnetic recording media, magneto-optical recording media, optical recording media and other recording media, magnetic recording heads, coils, inductors, thin film high transparency Magnetic materials and micro magnetic devices combining them, filters, reflective films, dichroic mirrors, optical thin films such as polarizing elements, semiconductor thin films, superconducting thin films, magnetic thin films, metal multilayer thin films, metal ceramic multilayer thin films, metal semiconductor multilayer thin films , Ceramic semiconductor multilayer thin film, organic thin film and multilayer thin film of other substances It is done. Since the manufacturing method of the present invention can reduce damage to a solid element, it can be suitably used for an organic semiconductor element sensitive to damage.

  The solid element can be manufactured by a general method thereof, and is not particularly limited.

The solid element forming step may include a heating step.

5. Peeling Step The peeling step is performed by applying an external force to one or both of the second substrate 3 and the peeling layer 2 of the first substrate 1 on which the solid element 4, the second substrate 3, and the peeling layer 2 are formed. The peeling layer 2 and the first substrate 1 are peeled between the two substrates 3 and the peeling layer 2.

5-1. The peeling external force is not particularly limited, and examples thereof include a force applied by a machine or a human.
When applying an external force to the second substrate 3 of the first substrate 1 on which the solid element 4, the second substrate 3, and the release layer 2 are formed, the second substrate 3 is predetermined in the direction in which the solid element 4 is formed. The peeling layer 2 and the first substrate 1 are peeled between the second substrate 3 and the peeling layer 2 by applying an external force at the place. Moreover, when applying external force to the 2nd board | substrate 3 of the 1st board | substrate 1 with which the solid element 4, the 2nd board | substrate 3, and the peeling layer 2 were formed, the solid element 4 from the 2nd board | substrate 3 with respect to the solid element 4. FIG. As a result of applying an external force in the forming direction, the external force is transmitted to the second substrate 3 and peels between the second substrate 3 and the release layer 2. When applying an external force to the release layer 2 of the first substrate 1 on which the solid element 4, the second substrate 3, and the release layer 2 are formed, a predetermined location of the release layer 1 from the release layer 2 in the formation direction of the first substrate 1 The release layer 2 and the first substrate 1 are peeled between the second substrate 3 and the release layer 2 by applying an external force. When applying an external force to the release layer 2 of the first substrate 1 on which the solid element 4, the second substrate 3, and the release layer 2 are formed, the first substrate 1 that adheres to the release layer 2 As a result of applying an external force from the release layer 2 in the formation direction of the first substrate 1, the external force is transmitted to the release layer 2 and peels between the second substrate 3 and the release layer 2. In this case, the adhesive force between the second substrate 3 and the release layer 2 is the adhesion between the first substrate and the release layer 2 so that the first substrate 1 and the release layer 2 do not peel off. It is preferably weaker than force. The external force may include a force component parallel to the second substrate 3.
When an external force is applied to the second substrate 3 of the first substrate 1 on which the solid element 4, the second substrate 3, and the release layer 2 are formed, and when the solid element 4, the second substrate 3, and the release layer 2 are formed. You may peel by both when applying external force to the peeling layer 2 of the one board | substrate 1. FIG.

<Second embodiment>
Hereinafter, a second embodiment of the method for manufacturing a device having a solid element of the present invention will be described.

  2nd embodiment of the manufacturing method of the device which has a solid element of this invention is the 2nd board | substrate preparatory process which prepares the 2nd board | substrate 3, and the peeling layer formation which forms the peeling layer 2 on the 2nd board | substrate 3 so that peeling is possible. A step, a first substrate forming step of forming the first substrate 1 on the release layer 2 of the second substrate 3 on which the release layer 2 is formed, and a second substrate 3 on which the first substrate 1 and the release layer 2 are formed. Solid element forming step for forming solid element 4 thereon, solid element 4, release layer 2, and one or both of second substrate 3 and release layer 2 of second substrate 3 on which first substrate 1 is formed And a peeling step of peeling the release layer 2 and the first substrate 1 from the second substrate 3 by applying an external force to the second substrate 3.

  In the second embodiment, the order of the steps of the first substrate and the second substrate in the first embodiment is switched, and the other points are the same. Therefore, since it is the same as the description of the first embodiment described above, details are omitted.

6). Uses Examples of the use of a device having a solid element produced by the method for producing a device having a solid element of the present invention include a liquid crystal display device, an electrophoretic display device, and an organic EL display device.

The following examples illustrate the present invention in more detail.
[Example 1]
A non-alkali glass having a thickness of 0.7 mm and a size of 150 mm □ was prepared. Next, a polydimethylsiloxane solution (100 g of polydimethylsiloxane (manufactured by Shin-Etsu Chemical Co., Ltd., KE-106)) and 100 g of xylene are applied onto the glass and dried, so that the thickness is 1 um and the size is large. Polydimethylsiloxane having a thickness of 150 mm □ was obtained. Next, a polyethylene naphthalate (Q65F, manufactured by Teijin DuPont) having a thickness of 100 μm and a size of 150 mm □ was formed on the polydimethylsiloxane. Next, on this polyethylene naphthalate, the process of heating at 150 ° C. for 3 hours and the other processes are the top gate / bottom contact type structure and the organic semiconductor element whose organic semiconductor is polythiophene is formed by a general process. did. At this time, the amount of dimensional change of polydimethylsiloxane and polyethylene naphthalate was ± 3.5 um. Next, the polydimethylsiloxane and the alkali-free glass were peeled between the polydimethylsiloxane and the polyethylene naphthalate by human hands. At the time of peeling, it was not possible to confirm that polydimethylsiloxane was adhered to the polyethylene naphthalate. At this time, the adhesive strength between polydimethylsiloxane and polyethylene naphthalate was 0.01 N / 25 mm in a 90 ° peel test (peel rate is 300 mm / min).
The current-voltage characteristics of the produced organic semiconductor element were measured before and after peeling. The source and drain voltages were changed from −50 V and the gate voltage from 20 V to −50 V, and measurement was performed in vacuum and under light shielding. As a result, the mobility of the semiconductor element was 0.1 cm ² / Vs before and after peeling. Therefore, it was confirmed that the organic semiconductor element was not damaged by peeling.

[Example 2]
In place of polyethylene naphthalate having a thickness of 100 um and a size of 150 mm □ in Example 1, polyethylene terephthalate having a thickness of 100 um and a size of 150 mm □ (manufactured by Teijin DuPont, KEL86W) An organic semiconductor element was produced in the same manner as in Example 1 except that was used.
The dimensional change of polydimethylsiloxane and polyethylene terephthalate was ± 5.0 um. When the polydimethylsiloxane and the alkali-free glass were peeled between the polydimethylsiloxane and the polyethylene terephthalate by human hands, it was not possible to confirm that the polydimethylsiloxane adhered to the polyethylene terephthalate. Moreover, the adhesive force between polydimethylsiloxane and polyethylene terephthalate was 0.02 N / 25 mm in a 90 ° peel test (peel rate is 300 mm / min).
The current-voltage characteristics of the produced organic semiconductor element were measured before and after peeling. The source and drain voltages were changed from −50 V and the gate voltage from 20 V to −50 V, and measurement was performed in a vacuum and under light shielding. As a result, the mobility of the semiconductor element was 0.08 cm ² / Vs before and after peeling. Therefore, it was confirmed that the organic semiconductor element was not damaged by peeling.

[Example 3]
Polydimethylsiloxane having a thickness of 1 μm and a size of 150 mm □ and a polyethylene nanometer having a thickness of 100 μm and a size of 150 mm □ on both sides as well as one side of the alkali-free glass of Example 1 above. An organic semiconductor element was produced in the same manner as in Example 1 except that phthalate was formed.
The dimensional change of polydimethylsiloxane and polyethylene naphthalate was ± 2.9 um. When the polydimethylsiloxane and the alkali-free glass were peeled between the polydimethylsiloxane and the polyethylene naphthalate by human hands, it was not possible to confirm that the polydimethylsiloxane adhered to the polyethylene naphthalate. Moreover, the adhesive force between polydimethylsiloxane and polyethylene naphthalate was 0.01 N / 25 mm in a 90 ° peel test (peel rate is 300 mm / min).
The current-voltage characteristics of the produced organic semiconductor element were measured before and after peeling. The source and drain voltages were changed from −50 V and the gate voltage from 20 V to −50 V, and measurement was performed in vacuum and under light shielding. As a result, the mobility of the semiconductor element was 0.1 cm ² / Vs before and after peeling. Therefore, it was confirmed that the organic semiconductor element was not damaged by peeling.

DESCRIPTION OF SYMBOLS 1 ... 1st board | substrate 2 ... Release layer 3 ... 2nd board | substrate 4 ... Solid element

Claims (2)

A first substrate preparation step of preparing a first substrate;
A release layer forming step of forming a release layer on the first substrate;
A second substrate forming step of detachably forming a second substrate on the release layer of the first substrate on which the release layer is formed;
A solid element forming step of forming a solid element on the second substrate of the first substrate on which the second substrate and the release layer are formed;
By applying an external force to one or both of the second substrate and the release layer of the first substrate on which the solid element, the second substrate, and the release layer are formed, the release from the second substrate. A peeling step of peeling the layer and the first substrate;
A method for manufacturing a device having a solid element.
A second substrate preparation step of preparing a second substrate;
A release layer forming step of forming a release layer on the second substrate in a peelable manner;
A first substrate forming step of forming a first substrate on the release layer of the second substrate on which the release layer is formed;
A solid element forming step of forming a solid element on the second substrate on which the first substrate and the release layer are formed;
By applying an external force to one or both of the second substrate and the release layer of the second substrate on which the solid element, the release layer, and the first substrate are formed, the release from the second substrate. A peeling step of peeling the layer and the first substrate;
A method for manufacturing a device having a solid element.

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