JP2012171800A - Method and apparatus for producing silicon carbide single crystal - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing a silicon carbide single crystal, suppressible of quality deterioration of the silicon carbide single crystal originated in a seed crystal.SOLUTION: A seed crystal 100 is fixed to a fixing member 200 so that a main surface 100b of the seed crystal 100 is faced to the open part side, and that a main surface 100a of the seed crystal 100 is faced to the bottom part 33 side, and the main surface 100a of a silicon carbide member 150 is faced to the main surface 100b of the seed crystal 100, and a space S is provided between the main surface 100a of the silicon carbide member 150 and the main surface 100b of the seed crystal 100, to thereby fix the silicon carbide member 150.

Description

  The present invention relates to a method for manufacturing a silicon carbide single crystal using a sublimation recrystallization method and an apparatus for manufacturing a silicon carbide single crystal.

  Conventionally, as a method for producing a silicon carbide single crystal, a method of sublimating a silicon carbide single crystal raw material and recrystallizing the sublimated raw material is widely known (see, for example, Patent Documents 1 and 2).

  Specifically, the raw material is disposed on the bottom side of the crucible body having an opening. A seed crystal made of silicon carbide that induces recrystallization of the raw material is fixed to the crucible lid with an adhesive. A heating coil is disposed outside the side surface of the crucible. The crucible is induction heated by passing a high frequency current through the heating coil. Thereby, the temperature inside a crucible rises and a raw material sublimes. The sublimated raw material is recrystallized based on the seed crystal, and a silicon carbide single crystal grows. Thus, the silicon carbide single crystal was manufactured.

  Moreover, the manufacturing apparatus of patent document 2 is provided with the sealing member which covers from the side surface of a crucible main body to the side surface of a seed crystal. Thereby, since it can suppress that a raw material leaks from the clearance gap between the cover body of a crucible and a crucible main body, the waste of a raw material can be suppressed.

JP 2001-139394 A JP 2010-138048 A

  In the manufacturing method described above, since the seed crystal is fixed to the lid body with an adhesive, thermal stress acts on the seed crystal due to a difference in thermal expansion between the seed crystal and the lid body. As a result, the seed crystal is distorted, and micropipe defects, dislocations, and stacking faults may occur in the manufactured silicon carbide single crystal.

  For this reason, it is also conceivable to provide a gap between the seed crystal and the lid, for example, by supporting the seed crystal using a sealing portion without fixing the seed crystal to the lid. In this case, since thermal stress does not act on the seed crystal, generation of micropipe defects and the like can be suppressed.

  However, when a gap is provided between the seed crystal and the lid, silicon carbide is easily sublimated from the surface of the seed crystal on the lid side. For this reason, there arises a problem that macro defects are likely to occur on the seed crystal side of the manufactured silicon carbide single crystal. In particular, when the manufacturing apparatus includes a sealing member, macroscopic defects are more likely to occur because the sublimated silicon carbide hardly exists on the surface side of the seed crystal on the lid side.

  Thus, in order to suppress the deterioration of the quality of the silicon carbide single crystal due to the seed crystal, there is still room for improvement with respect to the fixation of the seed crystal.

  Therefore, the present invention has been made in view of such a situation, and a method for producing a silicon carbide single crystal and a production of a silicon carbide single crystal capable of suppressing deterioration of the quality of the silicon carbide single crystal caused by the seed crystal. An object is to provide an apparatus.

  In order to solve the above-described problems, the present invention has the following features. A feature of the present invention is that a raw material of silicon carbide single crystal (raw material 20) is provided in a crucible (crucible 50) provided with a crucible body (crucible body 30) having an opening and a lid (cover 40) that closes the opening. ), A seed crystal fixing step (seed crystal fixing step S2) for fixing a seed crystal made of silicon carbide (seed crystal 100) to the crucible, and heating the raw material, A step of growing a silicon carbide single crystal on the seed crystal (growth step S3), and a method of manufacturing a silicon carbide single crystal comprising a surface (main surface 150a) made of silicon carbide in the seed crystal fixing step. ) Having a silicon carbide member (silicon carbide member 150) having one surface (main surface 100b) of the seed crystal facing the opening, and the other surface (main surface 100a) of the seed crystal being To face the bottom (bottom 33) side of the crucible body The seed crystal is fixed, the surface of the silicon carbide member is opposed to the seed crystal, and a gap (space S) is provided between the surface of the silicon carbide member and one surface of the seed crystal. Thus, the gist is to fix the silicon carbide member.

  According to the characteristics of the present invention, in the seed crystal fixing step, a silicon carbide member having a surface made of silicon carbide is prepared, one surface of the seed crystal faces the opening, and the other surface of the seed crystal is the crucible body. The seed crystal is fixed so as to face the bottom side of the silicon carbide member, the surface of the silicon carbide member is opposed to the seed crystal, and a gap is provided between the surface of the silicon carbide member and one surface of the seed crystal. Fix the member. Since the seed crystal is not attached to the lid, no thermal stress is generated in the seed crystal. For this reason, distortion does not occur in the seed crystal, and the occurrence of micropipe defects, dislocations, and stacking faults in the manufactured silicon carbide single crystal can be suppressed.

  A silicon carbide member is fixed to one surface side of the seed crystal with a gap therebetween. As a result, silicon carbide sublimates from the silicon carbide member in the gap, so that a large amount of silicon carbide exists in the gap. For this reason, silicon carbide does not easily sublime from the seed crystal, and the occurrence of macro defects can be suppressed.

  As a result, since the generation of defects due to the seed crystal can be suppressed, deterioration of the quality of the silicon carbide single crystal can be suppressed.

  Further, in the seed crystal fixing step, a fixing member (fixing member 200) having a fixing portion (fixing portion 220) surrounding the surface of the seed crystal and the silicon carbide member on the side surface (side surface 35) side of the crucible body is used. May be fixed.

  Further, in the seed crystal fixing step, the fixing may be performed using a fixing member having a sealing portion (sealing portion 240) covering the surface of the seed crystal from the side surface side of the crucible body to the side surface of the crucible body. good.

  In addition, the present invention is characterized in that a crucible body having an opening and having a silicon carbide single crystal material disposed thereon, a crucible provided with a lid for closing the opening, and one surface of the seed crystal A fixing member for fixing the seed crystal, and a silicon carbide member having a surface made of silicon carbide so that the other surface of the seed crystal faces the bottom side of the crucible body. The silicon carbide member is fixed so that the surface of the silicon carbide member faces the seed crystal, and a gap is provided between the surface of the silicon carbide member and one surface of the seed crystal. This is the gist.

  The fixing member may include a fixing portion that surrounds the surface of the seed crystal and the silicon carbide member on the side surface side of the crucible body.

  The fixing member may have a sealing portion that covers from the surface of the seed crystal to the side surface of the crucible body on the side surface side of the crucible body.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method and manufacturing apparatus of a silicon carbide single crystal which can suppress the fall of the quality of the silicon carbide single crystal resulting from a seed crystal can be provided.

FIG. 1 is a schematic cross-sectional view of a silicon carbide single crystal manufacturing apparatus 1 according to this embodiment. FIG. 2 is a schematic cross-sectional view of the fixing member 200 according to the present embodiment. FIG. 3 is a flowchart for illustrating the method for manufacturing the silicon carbide single crystal according to the present embodiment.

  An example of a method for manufacturing a silicon carbide single crystal and an apparatus for manufacturing a silicon carbide single crystal according to the present invention will be described with reference to the drawings. Specifically, (1) Schematic configuration of silicon carbide single crystal manufacturing apparatus 1, (2) Silicon carbide single crystal manufacturing method, (3) operational effects, (4) comparative evaluation, (5) other embodiments explain.

  In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. It should be noted that the drawings are schematic and ratios of dimensions and the like are different from actual ones. Accordingly, specific dimensions and the like should be determined in consideration of the following description. Moreover, the part from which the relationship and ratio of a mutual dimension differ also in between drawings may be contained.

(1) Schematic configuration of silicon carbide single crystal manufacturing apparatus 1 A schematic configuration of the silicon carbide single crystal manufacturing apparatus 1 according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic cross-sectional view of a silicon carbide single crystal manufacturing apparatus 1 according to this embodiment. FIG. 2 is a schematic cross-sectional view of the fixing member 200 according to the present embodiment. Specifically, FIG. 2 is a partially enlarged view of the fixing member 200 in FIG. As shown in FIG. 1, a silicon carbide single crystal manufacturing apparatus 1 (hereinafter, abbreviated as apparatus 1 as appropriate) includes a crucible 50 having a crucible body 30 and a lid 40, a support rod 60, a quartz tube 70, a heating coil. 80, an interference preventing coil 85, a seed crystal 100, and a fixing member 200.

  The crucible 50 includes a crucible body 30 and a lid body 40. The crucible body 30 has an opening. The crucible body 30 is a cylindrical container. The crucible body 30 is provided with a raw material 20 of silicon carbide single crystal (hereinafter, abbreviated as single crystal as appropriate). Specifically, the raw material 20 is disposed from the opening of the crucible body 30 to the bottom 33 of the crucible body 30. A step is provided on the side surface 35 of the crucible body 30. The side surface 35a on the bottom 33 side is closer to the center of the crucible body 30 than the side surface 35b on the lid body 40 side. For this reason, there is a step 35c at the boundary between the side surface 35a and the side surface 35b.

  The lid 40 closes the opening of the crucible body 30. The lid 40 has a convex portion. The opening of the crucible body 30 is closed by fitting the convex portion into the opening. In this embodiment, the convex part of the cover body 40 and the crucible main body 30 are formed with threads that mesh with each other. The lid body 40 has a surface 41 facing the bottom 33 side of the crucible body 30. A pedestal 45 is formed on the surface 41.

  The crucible 50 is fixed inside the quartz tube 70 by a support rod 60.

  The heating coil 80 is provided on the outer periphery of the quartz tube 70. The heating coil 80 includes a heating coil 80a and a heating coil 80b. The heating coil 80 a is located on the bottom 33 side of the crucible body 30. The heating coil 80b is located on the lid 40 side. By passing a high frequency current through the heating coil 80, the crucible 50 is induction heated. Thereby, the temperature inside the crucible 50 rises and the raw material 20 sublimates. The temperature on the lid 40 side is preferably lower than the temperature on the bottom 33 side of the crucible body 30 so that the raw material 20 is easily recrystallized. The crucible 50 is covered with a heat insulating material (not shown).

  Seed crystal 100 is made of silicon carbide. The seed crystal 100 induces recrystallization of the raw material 20. The seed crystal 100 is on a flat plate. Seed crystal 100 has one main surface 100a and the other main surface 100b which is the surface opposite to one main surface 100a. The seed crystal 100 is fixed to the crucible 50 by the fixing member 200.

  Silicon carbide member 150 has a surface made of silicon carbide. In the present embodiment, silicon carbide member 150 is made of silicon carbide. Silicon carbide member 150 is on a flat plate. Silicon carbide member 150 has one main surface 150a and the other main surface 150b which is the surface opposite to one main surface 150a. Silicon carbide member 150 is fixed to crucible 50 by fixing member 200.

  As shown in FIG. 2, the fixing member 200 includes a fixing part 220 and a sealing part 240. The shape of the fixed part 220 is a cylindrical shape with both ends opened. The fixed portion 220 is formed with a protruding portion 220a and a protruding portion 220b that protrude toward the central axis passing through the end portion. The protruding part 220 a is formed at one end of the fixed part 220. The protrusion 220b is formed between one end and the other end of the fixed portion 220. The length from the protrusion 220a to the protrusion 220b is at least the thickness of the seed crystal 100 or more. The other end portion of the fixing portion 220 is in contact with the surface 41 of the lid body 40. The fixing part 220 is fitted to the pedestal 45 of the seed crystal 100.

  The fixing member 200 fixes the seed crystal 100 so that the main surface 100b of the seed crystal 100 faces the opening and the main surface 100a of the seed crystal 100 faces the bottom 33 side. Specifically, seed crystal 100 is placed on projecting portion 220a such that main surface 100a of seed crystal 100 is in contact with projecting portion 220a.

  Fixing member 200 fixes silicon carbide member 150 such that main surface 100b of silicon carbide member 150 faces the opening, and main surface 100a of silicon carbide member 150 faces the bottom 33. Specifically, silicon carbide member 150 is placed on projecting portion 220b such that main surface 100a of silicon carbide member 150 is in contact with projecting portion 220b. For this reason, main surface 100 a of silicon carbide member 150 faces main surface 100 b of seed crystal 100. In addition, since the length from protrusion 220 a to protrusion 220 b is at least the thickness of seed crystal 100, it is between main surface 100 a of silicon carbide member 150 and main surface 100 b of seed crystal 100. A gap is provided.

  Seed crystal 100 and silicon carbide member 150 are fixed inside cylindrical fixing portion 220. Therefore, fixing portion 220 surrounds the surfaces of seed crystal 100 and silicon carbide member 150 on the side surface 35 side of crucible body 30. That is, the side surfaces of seed crystal 100 and silicon carbide member 150 are surrounded by fixing portion 220. For this reason, a space S surrounded by the seed crystal 100, the silicon carbide member 150 and the fixing portion 220 is formed.

  The sealing part 240 covers from the surface of the seed crystal 100 on the side surface 35 side of the crucible body 30 to the side surface 35 of the crucible body 30. The shape of the sealing part 240 is a cylindrical shape with both ends opened, and a frustum shape whose inner circumference becomes smaller toward the seed crystal 100 side. In the present embodiment, the shape of the sealing portion 240 is a truncated cone shape. One end of the sealing part 240 is joined to the other end of the fixing part 220. The other end of the sealing part 240 is supported by the step 35c. Thereby, the fixing member 200 is fixed to the crucible 50.

  Since the sublimated raw material 20 moves along the sealing portion 240, the sublimated raw material 20 moves toward the seed crystal 100. For this reason, a silicon carbide single crystal can be manufactured efficiently. Moreover, the sealing part 240 can suppress the raw material 20 from leaking from the gap between the crucible body 30 and the lid body 40.

(2) Manufacturing method of silicon carbide single crystal The manufacturing method of the silicon carbide single crystal which concerns on this embodiment is demonstrated, referring FIGS. 1-3. FIG. 3 is a flowchart for illustrating the method for manufacturing the silicon carbide single crystal according to the present embodiment.

  As shown in FIG. 3, the method for manufacturing a silicon carbide single crystal according to the present embodiment includes a raw material arranging step S1, a seed crystal fixing step S2, and a growth step S3.

(2.1) Raw material placement step S1
The raw material arrangement step S <b> 1 is a step of arranging the raw material 20 in the crucible 50. Specifically, the raw material 20 is disposed from the opening of the crucible body 30 to the bottom 33 of the crucible body 30.

  The silicon carbide contained in the raw material 20 may be prepared by any manufacturing method. For example, silicon carbide manufactured by a chemical vapor deposition method (CVD method) may be used, or a silicon carbide precursor is generated from a silicon-containing raw material and a carbon-containing raw material, and the generated silicon carbide precursor is fired. Silicon carbide obtained by doing so may be used. It is preferable to use a material with few impurities as the raw material 20.

(2.2) Seed crystal fixing step S2
In the seed crystal fixing step S <b> 2, the seed crystal 100 is fixed to the crucible 50. The seed crystal fixing step S2 includes a preparation step S21 and a fixing step S22.

  In preparation step S21, seed crystal 100 and silicon carbide member 150 are prepared. In this embodiment, a silicon carbide single crystal processed into a flat plate shape, specifically, a wafer shape, is used as the seed crystal 100 and the silicon carbide member 150. Therefore, silicon carbide member 150 has a surface made of silicon carbide.

  In fixing step S22, prepared seed crystal 100 and silicon carbide member 150 are fixed. First, the fixing member 200 is prepared. The seed crystal 100 is fixed to the fixing member 200 so that the main surface 100b of the seed crystal 100 faces the opening and the main surface 100a of the seed crystal 100 faces the bottom 33 side. Specifically, the seed crystal 100 is placed on the protrusion 220a such that the main surface 100a of the seed crystal 100 is in contact with the protrusion 220a.

  Silicon carbide member 150 is fixed such that main surface 100b of silicon carbide member 150 faces the opening, and main surface 100a of silicon carbide member 150 faces the bottom 33. Specifically, silicon carbide member 150 is placed on projecting portion 220b such that main surface 100a of silicon carbide member 150 is in contact with projecting portion 220b. Thereby, main surface 100a of silicon carbide member 150 faces main surface 100b of seed crystal 100. In addition, a gap (space S) is provided between main surface 100 a of silicon carbide member 150 and main surface 100 b of seed crystal 100.

  In this way, as shown in FIG. 2, seed crystal 100 and silicon carbide member 150 are fixed inside cylindrical fixing portion 220. Thereby, fixing portion 220 surrounds side surfaces of seed crystal 100 and silicon carbide member 150.

  Fixing member 200 to which seed crystal 100 and silicon carbide member 150 are fixed is attached to lid 40. Specifically, the other end portion of the fixing portion 220 is engaged with the pedestal 45. The lid body 40 to which the fixing member 200 is attached is attached to the crucible body 30. Thereby, the other end part of the sealing part 240 is supported by the level | step difference 35c. The sealing part 240 covers from the surface of the seed crystal 100 on the side surface 35 side of the crucible body 30 to the side surface 35 of the crucible body 30.

(2.3) Growth step S3
The growth step S3 is a step of heating the raw material 20 to grow a silicon carbide single crystal on the seed crystal 100.

  A current is passed through the heating coil 80 to heat the crucible 50. The heated crucible body 30 heats the raw material 20. Generally, the heating temperature is 2000 ° C to 2500 ° C. The heating coil 80 a and the heating coil 80 b are adjusted so that the temperature on the lid body 40 side is slightly lower than the temperature on the bottom side of the crucible body 30. If the sublimation temperature of the raw material 20 is exceeded, the raw material 20 will sublime.

  The sublimated raw material 20 is recrystallized on the seed crystal 100. Thereby, the silicon carbide single crystal starts to grow. The silicon carbide single crystal is grown until a silicon carbide single crystal of a desired size is obtained.

(3) Effects According to the silicon carbide single crystal manufacturing method and apparatus 1 according to the present embodiment, the main surface 100b of the seed crystal 100 faces the opening, and the main surface 100a of the seed crystal 100 faces the bottom 33. Seed crystal 100 is fixed to fixing member 200 so that it faces, main surface 100a of silicon carbide member 150 faces main surface 100b of seed crystal 100, and main surface 100a of silicon carbide member 150 and the main surface of seed crystal 100 Space S is provided between surface 100b and silicon carbide member 150 is fixed.

  For this reason, since the seed crystal 100 is not attached to the lid 40, no thermal stress is generated in the seed crystal 100. For this reason, distortion does not occur in seed crystal 100, and it is possible to suppress the occurrence of micropipe defects, dislocations, and stacking faults in the manufactured silicon carbide single crystal.

  On the main surface 100b side of seed crystal 100, silicon carbide member 150 is fixed with space S therebetween. Thereby, in the space S, silicon carbide sublimes from the silicon carbide member 150, so that a large amount of silicon carbide exists in the space S. For this reason, it becomes difficult to sublime silicon carbide from seed crystal 100, and generation of a macro defect can be controlled.

  As a result, since the generation of defects due to the seed crystal can be suppressed, deterioration of the quality of the silicon carbide single crystal can be suppressed.

  According to silicon carbide single crystal manufacturing method and apparatus 1 according to the present embodiment, fixing portion 220 surrounds side surfaces of seed crystal 100 and silicon carbide member 150. Thereby, silicon carbide sublimated from silicon carbide member 150 is likely to be present in the vicinity of seed crystal 100, and the occurrence of macro defects can be further suppressed.

  According to the silicon carbide single crystal manufacturing method and apparatus 1 according to the present embodiment, sealing portion 240 covers from the surface of seed crystal 100 on the side surface 35 side of crucible body 30 to side surface 35 of crucible body 30. Since the sealing part 240 can suppress the raw material from leaking through the gap between the crucible lid and the crucible body, waste of the raw material can be suppressed. For this reason, a silicon carbide single crystal can be manufactured efficiently. Even if the manufacturing method and apparatus 1 of the silicon carbide single crystal which concerns on this embodiment are provided with the sealing part 240, generation | occurrence | production of a macro defect can be suppressed.

(4) Comparative evaluation In order to confirm the effect of the present invention, the following measurements were performed. In addition, this invention is not limited to a following example.

  In the example, a seed crystal and a silicon carbide member were prepared. The seed crystal and the silicon carbide member were fixed to the fixing member so that the gap between the seed crystal and the silicon carbide member was 2 mm (see FIG. 1).

  The raw material was placed in the crucible body. It heated with the heating coil so that the temperature of a cover body might become 100 degreeC lower than the temperature of a raw material. The inside of the crucible was maintained at 5 Torr in an Ar atmosphere to grow a silicon carbide single crystal. Thereby, the silicon carbide single crystal according to the example was manufactured.

  In the comparative example, only the seed crystal was prepared, and the seed crystal was fixed to the lid using an adhesive. Moreover, the sealing member which covers from the side surface of a crucible main body to the side surface of a seed crystal was used. Other conditions were the same as in the example, and a silicon carbide single crystal was produced.

  In both examples and comparative examples, seed crystals having three micropipe defects were used.

  Silicon carbide single crystals according to Examples and Comparative Examples were cut into wafers. The obtained wafer was polished into a mirror surface. Using the obtained wafer, molten KOH etching evaluation was performed and the micropipe defect density was measured. The results are shown in Table 1.

Further, in both the example and the comparative example, a silicon carbide single crystal was manufactured in the same manner using a seed crystal having no macro defect, and a wafer was obtained. About the obtained wafer, the number of macro defects was measured by visual observation. The results are shown in Table 1.

  As shown in Table 1, in the comparative example, ten micropipe defects and macro defects occurred, whereas in the example, no micropipe defect and macro defect occurred.

  In the comparative example, since the thermal stress from the lid worked on the seed crystal, it is considered that the micropipe defect was generated in the silicon carbide single crystal based on the micropipe defect existing in the seed crystal. On the other hand, since the thermal stress did not act on the seed crystal of the example, it is considered that the micropipe defect did not occur in the wafer although the micropipe defect existed in the seed crystal of the example.

  Moreover, in the comparative example, although the back surface of the seed crystal is fixed to the lid, since the sealing member is used, the silicon carbide single crystal is particularly easily sublimated from the back surface of the seed crystal. For this reason, it is considered that macro defects occurred in the silicon carbide single crystal of the comparative example. On the other hand, in Example, since silicon carbide sublimates from the silicon carbide member, it is considered that sublimation of silicon carbide from the seed crystal is suppressed. For this reason, it is considered that no macro defect occurred in the wafer of the example.

(5) Other Embodiments Although the contents of the present invention have been disclosed through the embodiments of the present invention, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention. The present invention includes various embodiments not described herein. Accordingly, the present invention includes various embodiments not described herein.

  Specifically, in the above-described embodiment, silicon carbide member 150 is fixed to fixing member 200, but the present invention is not limited to this. Silicon carbide member 150 may be fixed to pedestal 45 of lid 40 using an adhesive.

  Moreover, although the fixing member 200 has the sealing part 240, it is not restricted to this. The fixing member 200 may be configured only by the fixing portion 220.

  As described above, the present invention includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

  DESCRIPTION OF SYMBOLS 1 ... Silicon carbide single crystal manufacturing apparatus (device), 20 ... Raw material, 30 ... Crucible body, 33 ... Bottom, 35, 35a, 35b ... Side, 35c ... Step, 40 ... Lid, 41 ... Surface, 45 ... Base, DESCRIPTION OF SYMBOLS 50 ... Crucible, 60 ... Support rod, 70 ... Quartz tube, 80, 80a, 80b ... Heating coil, 85 ... Interference prevention coil, 100 ... Seed crystal, 100a, 100b ... (Seed crystal) main surface, 150 ... Silicon carbide 150a, 150b ... main surface (of silicon carbide member), 200 ... fixing member, 220 ... fixing part, 220a, 220b ... projecting part, 240 ... sealing part

Claims (6)

Disposing a raw material of a silicon carbide single crystal in a crucible provided with a crucible body having an opening and a lid for closing the opening;
A seed crystal fixing step of fixing a seed crystal made of silicon carbide to the crucible;
Heating the raw material to grow a silicon carbide single crystal on the seed crystal, and a method for producing a silicon carbide single crystal comprising:
In the seed crystal fixing step,
Preparing a silicon carbide member having a surface made of silicon carbide;
Fixing the seed crystal so that one surface of the seed crystal faces the opening, and the other surface of the seed crystal faces the bottom of the crucible body,
The surface of the silicon carbide member faces the seed crystal, and a silicon carbide unit for fixing the silicon carbide member by providing a gap between the surface of the silicon carbide member and one surface of the seed crystal. Crystal production method.   2. The method for producing a silicon carbide single crystal according to claim 1, wherein in the seed crystal fixing step, fixing is performed using a fixing member having a fixing portion surrounding a surface of the seed crystal and the silicon carbide member on a side surface side of the crucible body. .   3. The silicon carbide according to claim 1, wherein, in the seed crystal fixing step, silicon carbide is fixed using a fixing member having a sealing portion that covers from the surface of the seed crystal to the side surface of the crucible body on the side surface side of the crucible body. A method for producing a single crystal. A crucible having an opening and having a crucible body on which a raw material of a silicon carbide single crystal is disposed; and a lid for closing the opening;
A fixing member for fixing the seed crystal such that one surface of the seed crystal faces the opening and the other surface of the seed crystal faces the bottom side of the crucible body;
A silicon carbide member having a surface made of silicon carbide,
The surface of the silicon carbide member faces the seed crystal, and a gap is provided between the surface of the silicon carbide member and one surface of the seed crystal so that the silicon carbide member is fixed. Silicon single crystal manufacturing equipment.   The said fixing member is a manufacturing apparatus of the silicon carbide single crystal of Claim 4 which has the fixing | fixed part which surrounds the surface of the said seed crystal and the said silicon carbide member in the side surface side of the said crucible main body.   The said fixing member is a manufacturing apparatus of the silicon carbide single crystal of Claim 4 or 5 which has a sealing part which covers from the surface of the said seed crystal in the side surface side of the said crucible main body to the side surface of the said crucible main body.

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