JP2012091442A - Light emitting apparatus, method for producing the same, optical printer head, and image forming system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting apparatus which causes little light emission failure and has high operation reliability, though it has a relatively compact structure.SOLUTION: The light emitting apparatus includes: a light emitting element having a substrate, a light emitting part and an insulating protective layer for partly covering the substrate and the light emitting part at the least; a circuit board on which the light emitting element is placed and which has a conductor part; a joining member which is attached to cover a space from the upper surface of the circuit board to the side face of the substrate and which joins the circuit board to the substrate; and a conductor layer which passes over the surface of the joining member and the surface of the insulating protective layer and is used for electrically connecting the conductor part to the light emitting element. The substrate of the light emitting element has an inclined part for connecting one main surface thereof to the side face thereof on the side face-side peripheral part of the main surface thereof. The space from the main surface of the substrate to the inclined part is covered with the insulating protective layer. The joining member is attached to cover a space from the upper surface of the circuit board and the side face of the substrate to the surface of the insulating protective layer for covering the inclined part.

Description

  The present invention relates to a light emitting device, a method for manufacturing the light emitting device, an optical printer head, and an image forming system.

  2. Description of the Related Art Conventionally, as an exposure unit for an electrophotographic printer or the like, an optical printer head configured to include a light emitting device in which light emitting elements such as LED elements are arranged has been used. In such a light emitting device, a light emitting element array chip having a plurality of light emitting elements on an upper surface and electrode pads connected to the light emitting elements is placed and fixed on a circuit board having a plurality of circuit wirings. Yes. In such a light emitting device, the electrode pad of the light emitting element array chip and the circuit wiring of the circuit board are electrically connected, and a current is supplied from the electrode pad to the predetermined light emitting element via the circuit wiring. The light emitting element emits light.

  The electrical connection between the electrode pad and the circuit wiring has been conventionally made by a bonding wire. In recent years, there is an increasing demand for downsizing of an optical printer head, and the distance between the light emitting element and the electrode pad in the light emitting element array chip is becoming closer. In addition, with the progress of miniaturization, the density and the multilayer of electric wiring in the light emitting element array chip are also progressing. For this reason, shocks and vibrations during bonding work are easily transmitted directly to the light emitting element and the electric wiring, and failures such as light emitting failure of the light emitting element and disconnection of the electric wiring are likely to occur. In addition, the nail head portion of the bonding wire formed on the electrode pad is also disposed at a position close to the light emitting element, and unnecessary light reflection or the like at the nail head portion of the bonding wire is likely to occur. .

  In view of such a problem, a technique for forming an electrical wiring to a light emitting element without using a bonding wire is proposed in, for example, Patent Document 1 below. FIG. 9 is a schematic cross-sectional view of a light-emitting device described in Patent Document 1 below. In the following Patent Document 1, a resin material 106 is disposed at a corner formed by a side surface of a substrate 101 that is a semiconductor substrate constituting the light emitting element array chip 102 and an upper surface of a circuit substrate 104, and the resin material 106 A conductive layer 108 is coated on the surface of the substrate. In the light emitting device, the conductive layer 108 electrically connects the circuit wiring on the circuit substrate 104 and the light emitting unit 110 made of a plurality of semiconductor layers stacked on the substrate 101.

JP 2002-292924 A

  However, in the light emitting device described in Patent Document 1, the periphery of the substrate 101 is surrounded only by the side surface 112 substantially perpendicular to the one main surface. The side surface 112 exposes the semiconductor constituting the substrate 101, and the side surface 112 is electrically connected to the light emitting unit 110 formed on the substrate 101.

  In the light emitting device described in Patent Document 1, the peripheral edge of the one main surface on which the light emitting unit 110 is formed is surrounded only by the side surface 112 substantially perpendicular to the one main surface, and the substrate is very close to the one main surface. The semiconductor constituting 104 is exposed.

  For this reason, in the light emitting device described in Patent Document 1, as shown by X in FIG. 9, the side surface 112 is not sufficiently covered with the resin material 106, and the conductive layer 108 is likely to be in contact with the side surface 112. In a state where the conductive layer 108 is in contact with the side surface 112, a current flows from the side surface 112 to the light emitting unit 110, and the light emitting unit 110 emits light at a timing other than a desired timing, or a light emission amount is reduced due to a voltage effect due to leakage current. Will cause a malfunction. Conversely, in order to avoid such contact between the side surface 112 and the conductive layer 108, if the amount of the resin material 106 is excessively increased, the resin material may run from the side surface 112 of the substrate 104 to one main surface of the substrate 104. As shown by Y in FIG. 9, problems such as an electrical connection failure caused by the resin material 106 covering the electrode wiring, a light emission failure caused by the resin material 106 covering the light emitting portion 110, and the like occur. There is.

  As described above, the light emitting device described in Patent Document 1 has a problem that the light emitting device is likely to malfunction.

  In order to solve the above-described problems, a substrate, a light-emitting unit including a plurality of semiconductor layers stacked on one main surface side of the substrate, and at least a part of the light-emitting unit and the one main surface A light-emitting element having an insulating protective layer covering at least a part thereof; a circuit board on which the light-emitting element is placed; and an upper surface facing the other main surface of the substrate and a conductor portion provided on the upper surface; An insulating bonding member that is attached from the upper surface of the circuit board to a side surface of the board and bonds the circuit board and the substrate, and passes through the surface of the bonding member and the surface of the insulating protective layer, and the conductor portion. And a conductive layer electrically connecting the light emitting element, and the substrate of the light emitting element has an inclined portion connected to the one main surface and the side surface at a peripheral portion of the one main surface on the side surface side Having The protective layer is covered from the one main surface of the substrate to the inclined portion, and the bonding member covers the inclined portion from the upper surface of the circuit board and the side surface of the substrate. Provided is a light emitting device characterized in that the light emitting device is applied to the surface.

  In addition, a step of preparing a substrate and forming the light emitting portion on the substrate, and a step of forming a groove portion having a narrower inner surface and a width that is narrower in the depth direction on one main surface of the substrate, Forming an insulating protective layer covering the one main surface of the substrate and the inner surface of the groove, and cutting the substrate along the groove so as to leave a part of the inner surface; A step of obtaining a light emitting element having a side surface formed of a cut surface and an inclined portion formed of a part of the inner side surface connected to the side surface, and a light emitting unit provided on the substrate, and a wiring pattern provided on the upper surface And a step of placing the light emitting element on the upper surface of the circuit board, and the insulating protective layer covering the side surface of the substrate and the inclined portion of the substrate from the upper surface of the circuit board. On the surface of And bonding the light emitting element to the circuit board and electrically connecting the conductor portion and the light emitting element through the surface of the bonding member and the surface of the insulating protective layer. And a step of forming a conductive layer. The method for manufacturing a light-emitting device is also provided.

  In addition, an optical printer head including the above-described light emitting device, a lens that transmits light from the light emitting element of the light emitting device to form an image, and a support member that supports the lens with the light emitting device are combined. To provide.

In addition, the above-described optical printer head, a control unit that transmits an image signal to the optical printer head, a photoconductor that is irradiated with light emitted from the light-emitting element according to the image signal through the lens, Prior to the light irradiation from the light emitting element, a charging portion for charging the surface of the electrophotographic photosensitive member, and the image formed on the surface of the electrophotographic photosensitive member by being irradiated with the light from the light emitting element. Also provided is an image forming system including a developing unit that develops an electrostatic latent image according to a signal to form a toner image, and a transfer unit that transfers the toner image onto the surface of a recording medium. .

  The light-emitting device of the present invention is relatively compact, has few light emission defects, and has high operational reliability. According to the method for manufacturing a light emitting device of the present invention, it is possible to manufacture a light emitting device that is relatively compact and has few defective light emission and high operation reliability. The optical printer head of the present invention and the image forming system of the present invention have high image forming operation reliability while having a relatively compact configuration.

(A) And (b) is a figure explaining one Embodiment of the light-emitting device of this invention, Fig.1 (a) is a schematic plan view, FIG.1 (b) is a schematic sectional drawing. It is a figure which expands and shows a part shown in FIG.1 (b). (A)-(e) is a schematic sectional drawing explaining the manufacturing method of the light-emitting device shown in FIG. (A)-(c) is a schematic sectional drawing explaining the manufacturing method of the light-emitting device shown in FIG. It is a schematic sectional drawing explaining different embodiment of the light-emitting device of this invention. It is a schematic cross section explaining different embodiment of the light-emitting device of this invention. It is a schematic sectional drawing explaining one Embodiment of the optical printer head of this invention comprised including an example of the light-emitting device of this invention. It is a schematic sectional drawing explaining one Embodiment of the image forming system of this invention comprised including the optical printer head shown in FIG. It is a schematic sectional drawing of the conventional light-emitting device.

  Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1A and 1B are diagrams illustrating a light-emitting device 1 that is an embodiment of the light-emitting device of the present invention. FIG. 1A is a schematic plan view, and FIG. 1B is a schematic cross-sectional view. FIG.
FIG. 2 is an enlarged view of a part shown in FIG.

  The light emitting device 1 electrically connects the light emitting element 10, the circuit board 20, the bonding member 30 that joins the circuit board 20 and the light emitting element 10, and the conductor 22 on the circuit board 20 and the light emitting element 10. And a conductor layer 40 for this purpose.

  The light emitting element 10 includes, for example, a substrate 11 which is a substrate made of a single crystal such as a high resistance silicon single crystal or GaAs, and light emission provided on one main surface of the substrate 11 (the upper main surface in FIG. 1B). Part 12, conductor wiring 15 electrically connected to light emitting part 12, insulating protective layer 14 covering at least part of light emitting part 12 and conductor wiring 15, provided on one main surface side of substrate 11 .

The light emitting unit 12 is configured by laminating a one-conductivity-type semiconductor layer 12a and a reverse-conductivity-type semiconductor layer 12b. The one conductivity type semiconductor layer 12a is formed of gallium arsenide, aluminum gallium arsenide, or the like. Further, the one conductivity type semiconductor layer 12a contains one conductivity type semiconductor impurity such as silicon in an amount of about 1 × 10 ¹⁶ to 10 ¹⁷ atoms / cm 3. The reverse conductivity type semiconductor layer 12b is made of aluminum gallium arsenide or the like and contains about 1 × 10 ¹⁶ to 10 ²¹ atoms / cm ³ of a reverse conductivity type semiconductor impurity such as zinc (Zn). One conductivity type semiconductor layer 1
The junction between 2a and the reverse conductivity type semiconductor layer 12b forms a so-called PN junction. The one conductivity type semiconductor layer 12a is formed to a thickness of about 2.0 to 4.0 μm, and the reverse conductivity type semiconductor layer 12b is formed to a thickness of about 2.0 to 3.0 μm.

The insulating protective layer 14 in the present embodiment is configured by laminating, for example, a first insulating film 14a, a second insulating film 14b, and a third insulating film 14c made of, for example, a SiNx film, a SiO ₂ film, polyimide, or the like. Has been. The material of these insulating films 14a, 14b, 14c is not particularly limited.

  The conductor wiring 15 includes a connection wiring 15a formed on the surface of the first insulating film 14a, and a lead wiring formed on the second insulating film 14b covering the first insulating film 14a and the connection wiring 15a. 15b. The connection wiring 15a extends along the arrangement direction of the light emitting portions 12, and is connected to the lead-out wiring 15b through an opening provided in the second insulating film 14b. The lead wiring 15b is also connected to the light emitting unit 12 through an opening provided in the first insulating film 14a. The connection wiring 15a and the lead-out wiring 15b are metal films such as gold / chromium (Au / Cr) formed by a known sputtering method, for example, and are formed with a thickness of about 1 μm. A third insulating film 14c is laminated on the surface of the lead wiring 15b.

The substrate 11 of this embodiment has one main surface 11a and side surface 11b, and an inclined portion 18 connected to the one main surface 11a and side surface 11b. On the other hand, the main surface 11a and the side surface 11b are in a vertical relationship between a virtual plane including the one main surface 11a and a virtual plane including the side surface 11b. The inclined portion 18 of the present embodiment is configured by a crystal plane having a specific crystal orientation that appears by wet etching. The third insulating film 14 c covers the surface of the inclined portion 18. That is, in the light emitting device 1, the outermost surface of the inclined portion 18 is insulative.

  The circuit board 20 is a mounting board in which circuit elements and electrical wiring (not shown) are provided on the surface of a base board such as resin. The light emitting element 10 is placed on the upper surface 20 a of the circuit board 20 and bonded by the bonding member 30. The joining member 30 is made of a cured resin material. The joining member 30 is made of, for example, a cured photocurable resin material.

  The bonding member 30 is attached to the side surface 11 b of the substrate 11 from the upper surface 20 a of the circuit board 20 and bonds the circuit board 20 and the substrate 11. More specifically, the bonding member 30 is applied from the upper surface 20a of the circuit board 20 and the side surface 11b of the substrate 11 to the surface of the insulating protective layer 14 (third insulating film 14c) that covers the inclined portion 18. . The upper end of the bonding member 30 is located in a region corresponding to the inclined portion 18 of the substrate 11. In the present embodiment, the inclined portion 18 and the side surface 11b of the substrate 11 are entirely covered with an insulating member (the insulating protective layer 14, the bonding member 30), and the upper surface 20a of the circuit board 20 and the light emission. One main surface of the substrate 11 on which the portion 12 is provided is continuous through a gentle slope composed of the surface of the bonding member 30 and the surface of the insulating protective layer 14 covering the inclined portion 18.

  The conductor layer 40 passes through the surface of the bonding member 30 and the surface of the insulating protective layer 14 (third insulating film 14c) provided on the inclined portion 18, and passes through the conductor portion 22 and the light emitting element 10 on the circuit board 20. Are electrically connected. The conductor layer 40 can be formed by, for example, a known printing method using a conductive paste, a known metal thin film forming method using sputtering, or the like. In the present embodiment, the upper surface 20a of the circuit board 20 and the one main surface of the substrate 11 on which the light emitting unit 12 is provided are continuous by a gentle slope as described above, and can be printed by a printing method or a sputtering method. There is no relatively large step portion that causes disconnection when the conductor layer 40 is formed, and light emission failure due to disconnection of the electrical wiring is suppressed.

In the present embodiment, the substrate 11 has the inclined portion 18, and the surface of the inclined portion 18 is the insulating protective layer 1.
4, if the end of the joining member 30 is within the range of the inclined portion 18, a short circuit between the conductor layer 40 and the substrate 11 can be prevented. In forming the bonding member 30, the resin material that is a precursor of the bonding member 30 is in a highly viscous state, and it is relatively difficult to define the position and shape of the end portion after curing. In this embodiment, if there is an end portion of the joining member 30 within the range of the inclined portion 18, it is possible to prevent a light emission failure due to an electrical short circuit, and light emission due to variations in the position and shape of the resin material. Defects can be suppressed.

  In the present embodiment, the light emitting unit 12 and the conductor 22 on the circuit board 20 are joined by the conductive layer 40 disposed so as to be laminated on the connection wiring 15a and the lead wiring 15b. The light emitting device 1 of the present embodiment in which many electric wiring layers are stacked has a sufficiently compact configuration as compared with a conventional light emitting device having bonding pads at positions that do not overlap the wiring layers. In the conventional light emitting device, when a bonding pad is provided so as to be laminated on the connection wiring and the lead wiring, the connection wiring 15a and the lead wiring 15b are easily damaged by an impact at the time of bonding, and a light emission failure due to disconnection or the like occurs. It was possible to obtain only a light emitting device which is easy to perform and has extremely low reliability. In the light emitting device of the present embodiment, the conductive layer 40 laminated with the connection wiring 15a and the lead-out wiring 15b is formed by a technique that has a small impact on the wiring, such as printing or a thin film forming method. The light emitting device according to the present embodiment has a compact configuration in which a plurality of wirings are stacked in a multi-layer structure, but has few wiring defects and disconnections, and has high operational reliability.

  Next, a method for manufacturing the light emitting device 1 will be described. FIGS. 3A to 3E and FIGS. 4A to 4C are schematic cross-sectional views illustrating a method for manufacturing the light-emitting device 1.

  First, the light emitting section 12, the first insulating film 14a, the second insulating film 14b, the connection wiring 15a, and the lead-out wiring 15b are formed on the semiconductor substrate 50 made of a high-resistance silicon single crystal (FIG. 3A )).

The light emitting unit 12 is formed by sequentially stacking a one-conductivity-type semiconductor layer 12a and a reverse-conductivity-type semiconductor layer 12b by MOCVD or the like. In the formation of these semiconductor layers 12a and 12b, the substrate temperature is set to 400 to 500 ° C., thereby forming an amorphous gallium arsenide film with a thickness of 200 to 2000 mm, and then the substrate temperature is set to 700 to 900 ° C. The one conductivity type semiconductor layer 12a and the reverse conductivity type semiconductor layer 12b having a desired thickness are formed. In this film formation, as source gases, TMG ((CH ₃ ) ₃ Ga), TEG ((C ₂ H ₅ ) ₃ Ga), arsine (AsH ₃ ), TMA ((CH ₃ ) ₃ Al), TEA (( C ₂ H _{5) 3} Al) and the like are used as the gas for controlling conductivity types, silane _(SiH 4), hydrogen selenide _(H 2 Se), and _{DMZ ((CH 3) 2 Zn} ) As the carrier gas, H ₂ or the like is used. Next, the semiconductor layers 12a and 12b are patterned in an island shape so that adjacent elements are electrically separated. Etching is performed by wet etching using a sulfuric acid hydrogen peroxide-based etching solution, dry etching using CCl ₂ F ₂ gas, or the like. Thereafter, the reverse conductive semiconductor layer 12b is etched so that a part of the single conductive semiconductor layer 12a is exposed and the reverse conductive semiconductor layer 12b is formed narrower than the single conductive semiconductor layer 12a. Such etching is also performed by wet etching using a sulfuric acid hydrogen peroxide-based etching solution or dry etching using CCl ₂ F ₂ gas.

Next, etching is performed with, for example, an alkaline aqueous solution so that adjacent light emitting elements are electrically separated even on the substrate. At this time, a part of the one-conductivity-type semiconductor layer 12a is exposed, and an adjacent region portion of the one-conductivity-type semiconductor layer 12a is exposed, and the reverse-conductivity-type semiconductor layer 12b is formed in the one-conductivity-type semiconductor layer 12a. In this case, the pattern used when the reverse-conductivity type semiconductor layer 12b is etched so as to be formed narrower is left as it is, so that the reverse-conductivity type semiconductor layer 12b is electrically isolated without any change.

Next, a multilayer wiring structure including the insulating protective layer 14 and the electric wiring 15 is formed. In the formation of this multilayer wiring structure, the first insulating film 14a and the second insulating film 14b made of, for example, silicon nitride are formed by plasma CVD using silane gas (SiH ₄ ) and ammonia gas (NH ₃ ). The connection wiring 15a and the lead-out wiring 15b are formed by forming and patterning chromium and gold by vapor deposition or sputtering. The multilayer wiring structure composed of the insulating film and the metal film can be formed by a known method using the above-described various film forming methods and a patterning method by a photolithography method.

  Next, as shown in FIG. 3B, an etching mask layer 42 covering the structure formed in FIG. 3A is formed. The etching mask layer 42 may be, for example, a silicon nitride film formed by a plasma CVD method, or may be a resist film, a polyimide film, or the like. As the etching mask layer 42, an appropriate mask layer corresponding to an etching method such as an etching gas or an etching chemical solution in an etching process described later may be selected. The etching mask layer 42 covers the entire structure such as the light emitting unit 12, the insulating protective layer 14, and the conductor wiring 15, and an opening 42 </ b> A is disposed in the gap between the light emitting units 12.

  Next, as shown in FIG. 3C, the semiconductor substrate 50 is etched to form a groove 52 corresponding to the opening of the etching mask layer 42. In this step, the width becomes narrower as it goes in the depth direction, and the groove portion 52 in which the inner side surface 54 is inclined is formed. For the etching, either dry etching using a known etching gas or wet etching using a known etching chemical may be used. For example, a silicon single crystal surface that forms a predetermined inclination angle with respect to the main surface of the single crystal substrate 50 by anisotropic etching of silicon using an aqueous solution of KOH (potassium hydroxide) or TMAH (tetramethylammonium hydroxide). It is preferable to form a so-called V-groove in which a predetermined crystal plane such as (111) crystal plane appears. When a groove (V groove) in which a predetermined crystal plane appears on the inner surface is formed by anisotropic wet etching, the angle of the inner surface and the etching depth are substantially uniform over the entire single crystal substrate 50, and the manufactured semiconductor The inclined surface of the substrate in the element is preferable because it is substantially uniform. For example, isotropic wet etching may be used to form the groove 52. Even when isotropic wet etching is performed, the groove portion 52 whose inner side surface is inclined can be formed by side etching that occurs when the etchant enters the lower portion of the mask. After forming the groove 52, the etching mask layer 42 is removed.

  Next, as shown in FIG. 3D, a third insulating film 14c having a predetermined shape is formed on the surface of the semiconductor substrate 50 in which the groove 52 is formed. The third insulating film 14 c is formed so as to cover the inner side surface 54 of the groove 52 from one main surface of the semiconductor substrate 50. The third insulating film 14c may be a silicon nitride film formed by, for example, a plasma CVD method, or may be a film formed by a known film forming method such as a polyimide film. After covering the entire semiconductor substrate 50, the third insulating film 14c is patterned into a predetermined shape by a known photolithography method, and a part of the one-conductivity-type semiconductor layer 12a and a part of the extraction electrode 15b are exposed. An opening is formed.

  Next, as shown in FIG. 3E, the semiconductor substrate 50 is cut along the groove portion 52 so as to leave a part of the inner side surface 54, thereby connecting to the side surface 11b made of the cut surface and the side surface 11b. A light-emitting element 10 including the substrate 11 having the inclined portion 18 and the light-emitting portion 12 provided on the substrate 11 is obtained. This cutting may be performed by a so-called known dicing technique in which a substantially vertical cut surface is obtained by a dicing blade.

Next, as shown in FIG. 4A, a circuit board 20 having an upper surface provided with a wiring pattern including the conductor portion 22 is prepared, and the light emitting element 10 is placed on the upper surface of the circuit board 20.

  Next, as illustrated in FIG. 4B, the bonding member 30 extends from the upper surface 20 a of the circuit substrate 20 to the surface of the third insulating film 14 c that covers the side surface 11 b of the substrate 11 and the inclined portion 18 of the substrate 11. A photocurable resin material 60 that is a precursor is disposed. The photocurable resin material 60 is a viscous liquid, and when it is disposed at a corner formed by the side surface 11b of the substrate 11 and the upper surface 20a of the circuit board 20, the side surface 11b of the substrate 11 is wetted and the upper end portion is inclined. A part corresponding to the part 18 is reached. In other words, the viscosity, the arrangement position, the arrangement amount, and the like of the photocurable resin material 60 are adjusted so that the upper end portion reaches such a position. The surface of the photocurable resin material 60 that has wetted the side surface 11b of the substrate 11 forms a gentle meniscus. The photocurable resin material 60 is photocured to form the joining member 30 that joins the substrate 11 and the circuit board 20. The upper surface 20a of the circuit board 20 and the one main surface of the board 11 are continuous by a gentle slope formed by the surface of the bonding member 30 and the surface of the insulating protective layer 14 covering the inclined portion 18. Note that the bonding member 30 is not limited to the photocurable resin material, and may be, for example, a thermosetting resin material, and is not particularly limited.

  Next, as shown in FIG. 4C, a known printing method using, for example, a metal paste is used to pass through the surface of the bonding member 30 and the surface of the insulating protective layer 14 (third insulating film 14c). A conductor layer 40 that electrically connects the electrode 15c and the light emitting element 12 is formed. In the present embodiment, since the upper surface 20a of the circuit board 20 and the one main surface of the substrate 11 on which the light emitting unit 12 is provided are continuous with a gentle slope as described above, a printing method or a sputtering method is used. Thus, when the conductor layer 40 is formed, defects such as disconnection at the stepped portion hardly occur, and light emission defects due to disconnection of the electrical wiring are suppressed. In the manufacturing method of this embodiment, the conductive layer 40 with few defects such as disconnection can be formed by printing or a thin film forming method. In the manufacturing method according to the present embodiment, a plurality of wirings are stacked in a multi-layer structure, but there are few wiring defects and disconnections, and operation reliability is high.

  FIG. 5 is a schematic cross-sectional view illustrating a different embodiment of the light emitting device of the present invention. The embodiment shown in FIG. 5 is different from the embodiment shown in FIG. 1 in that the connection layer 15a is not provided and the conductive layer 40 is individually wired to each light emitting element 10. FIG. 6A is also a schematic cross-sectional view illustrating a different embodiment of the light emitting device of the present invention. The embodiment shown in FIG. 6 does not have both the connection wiring 15a and the lead-out wiring 15b, and is shown in FIG. 1 in that the conductive layer 40 is directly bonded to the light emitting unit 12 (reverse conductivity type semiconductor layer 12b). It is different from the embodiment. In the first invention of the present application, the conductive layer 40 is not limited to a configuration having a multilayer electrode layer, and may be bonded to a single electrode layer or directly bonded to a semiconductor layer constituting the light emitting unit 12. May be. There are no particular limitations on the structure of the wiring in the light-emitting device, the connection state between the conductive layer and the wiring, or the like.

  FIG. 7 is a schematic cross-sectional view illustrating an embodiment of the optical printer head of the present invention, which is configured to include an example of the light emitting device of the present invention. The optical print head 70 of this embodiment includes the light emitting device 1, a case 72, a rod lens array 76, and a base plate 78.

  The base plate 78 is a plate-like member extending in one direction, and is made of a member that is harder than the circuit board 20 of the light emitting device 10, such as a metal such as aluminum.

One lower surface of the base plate 78 is bonded to the lower surface (the surface opposite to the surface on which the light emitting element 10 is mounted) of the circuit board 20 of the light emitting device 1 by, for example, an adhesive tape or an adhesive. A through hole (not shown) is provided in the base plate 78, and signals are input / output from / to a control electronic circuit arranged on the circuit board from a connector provided in the circuit board 20 through the through hole. Can do.

  The case 72 is for holding the rod lens array 76, and is formed, for example, by resin molding using a black resin. The case 72 is bonded and fixed to the base plate 80 to which the light emitting element 10 is bonded. That is, the case 72 is also made of a relatively hard material and is fixed to the base plate 80 having a relatively high bending rigidity. In the optical printer head 70, the case 72 and the base plate 80 constitute a support member, and the rod lens array 76 and the light emitting element 20 are supported by the support member, and their relative positions are fixed.

  The rod lens array 76 includes a plurality of rod lenses 76A. The plurality of rod lenses 76A are arranged in a zigzag pattern in one direction (direction perpendicular to the paper surface in FIG. 7), and have a diameter of, for example, 0.3 mm to 1.1 mm, and a length of 4 mm to 17 mm. It is the following cylindrical shape. The light emitted from each light emitting unit 12 of the light emitting device 1 is shaped by the rod lens array 76 and irradiated and imaged on an external electrophotographic photosensitive member 81 to be described later. In the optical printer head 70, the lighting state of each light emitting unit 12 is individually controlled by an image signal input from the control means via the connector (not shown). Light from each light emitting unit 12 emitted at a predetermined timing is shaped by a rod lens array and imaged on the electrophotographic photosensitive member 81 described above.

  FIG. 8 is a schematic cross-sectional view for explaining an embodiment of the image forming system of the present invention configured to include the optical printer head 70 shown in FIG. An image forming system 80 shown in FIG. 8 includes an optical printer head 70, an electrophotographic photosensitive member 81, a charging device 82, a developing device 84, a transfer device 85, a fixing device 86, a cleaning device 87, and a static eliminating device 88. It is.

  The electrophotographic photosensitive member 81 forms an electrostatic latent image and a toner image based on an image signal, and is rotatable in the direction of arrow A in FIG. As shown in FIG. 7, the electrophotographic photosensitive member 81 has a photosensitive layer 91 formed on the outer peripheral surface of a cylindrical substrate 90.

  The cylindrical substrate 90 has conductivity on at least the surface thereof, and is formed of, for example, aluminum. The photosensitive layer 91 has a structure in which a photoconductive layer made of an inorganic semiconductor such as amorphous silicon or an organic semiconductor is applied. When the photoconductive layer is irradiated with light from the optical printer head 70, the photoconductive layer 91 is photoconductive. The specific resistance of the layer is rapidly reduced to form a predetermined latent image on the photoconductive layer. The photosensitive layer 91 may also be provided with a carrier injection blocking layer for blocking carrier injection from the cylindrical substrate 90 and a surface layer for protecting the surface of the electrophotographic photosensitive member 81.

  The charging device 82 is for uniformly charging the surface of the electrophotographic photosensitive member 81 positively or negatively according to the type of the photoconductive layer. The charging potential of the electrophotographic photosensitive member 81 is usually 200 to 1000V.

  The optical printer head 70 irradiates light on the surface of the photosensitive layer 91 of the electrophotographic photosensitive member 81 in accordance with an image signal in order to form an electrostatic latent image on the surface of the electrophotographic photosensitive member 81. The optical printer head 70 is arranged substantially parallel to the electrophotographic photosensitive member 81 so as to be separated by a predetermined distance. In the optical printer head 70, a connector (not shown) is connected to the control unit 89 of the image forming system 80. The optical printer head 70 receives an image signal transmitted from the control unit 89 of the image forming system 80 from a connector (not shown), and emits light according to the image signal. The configuration of the optical printer head 70 which is an embodiment of the optical printer head of the present invention will be described in detail later.

  The control unit 89 is a part that controls the operation of the entire image forming system 80, and is configured by a computer having a CPU, a memory, and the like (not shown), for example. The control unit 89 converts an image signal input from the outside of the image forming system 80 into a driving signal for the optical printer head 70 and outputs the signal to the optical printer head 70 via a connector (not shown). In the present specification, an image signal input from the outside and a signal for driving the optical print head 70 are not particularly distinguished and are described as image signals. The control unit 89 controls the operation of each unit according to an operation instruction and an image signal received from the outside, and forms an image according to the received image signal.

  The developing device 84 is for developing the electrostatic latent image of the electrophotographic photosensitive member 1 to form a toner image. The developing device 84 holds a developer and includes a developing sleeve 85.

  The developer is for constituting a toner image formed on the surface of the electrophotographic photosensitive member 81, and is frictionally charged in the developing device 84. As the developer, a two-component developer composed of a magnetic carrier and an insulating toner or a one-component developer composed of a magnetic toner can be used.

  The developing sleeve 85 serves to convey the developer to the developing area between the electrophotographic photosensitive member 81 and the developing sleeve 85. In the developing device 84, the toner frictionally charged by the developing sleeve 85 is conveyed in the form of a magnetic brush adjusted to a constant spike length, and this toner is used in the developing area between the electrophotographic photosensitive member 81 and the developing sleeve 85. The electrostatic latent image is developed to form a toner image. The charge polarity of the toner image is opposite to the charge polarity of the surface of the electrophotographic photosensitive member 81 when image formation is performed by regular development, and the image formation is performed when reversal development is performed. The surface of the body 81 has the same polarity as the charged polarity.

  The transfer device 85 is for transferring the toner image onto the recording paper P fed to the transfer area between the electrophotographic photosensitive member 1 and the transfer device 5, and includes a transfer charger 93 and a separation charger 95. I have. In the transfer device 85, the back surface (non-recording surface) of the recording paper P is charged with a polarity opposite to that of the toner image in the transfer charger 93, and the electrostatic charge between the charged charge and the toner image causes the recording paper P to adhere to the recording paper P. The toner image is transferred. In the transfer device 85, simultaneously with the transfer of the toner image, the back surface of the recording paper P is AC-charged by the separation charger 95, and the recording paper P is quickly separated from the surface of the electrophotographic photosensitive member 1.

  As the transfer device 85, it is also possible to use a transfer roller that is driven by the rotation of the electrophotographic photosensitive member 81 and disposed with a small gap (usually 0.5 mm or less) from the electrophotographic photosensitive member 81. It is. The transfer roller in this case is configured to apply a transfer voltage that attracts the toner image on the electrophotographic photosensitive member 81 onto the recording paper P by, for example, a DC power source. When such a transfer roller is used, a transfer material separating device such as the separation charger 95 can be omitted.

  The fixing device 86 is for fixing the toner image transferred to the recording paper P, and includes a pair of fixing rollers 96 and 97. In the fixing device 86, the recording paper P is passed between the pair of rollers 96 and 97, whereby the toner image is fixed to the recording paper P by heat, pressure, or the like. In the image forming system 80, an image is recorded on the recording paper P in this way.

The cleaning device 87 is for removing the toner remaining on the surface of the electrophotographic photosensitive member 81 and includes a cleaning blade 89. In the cleaning device 87, the toner remaining on the surface of the electrophotographic photosensitive member 81 is scraped and collected by the cleaning blade 89. The toner collected in the cleaning device 87 may be recycled into the developing device 84.

  The static eliminator 88 is for removing the surface charge of the electrophotographic photosensitive member 81. The static eliminator 88 is configured to remove the surface charge of the electrophotographic photosensitive member 81 by, for example, light emission. By the operation of the cleaning device 87 and the charge eliminating device 88, the surface state of the electrophotographic photosensitive member 81 is reset to the initial state (that is, the state where the toner is not attached and is not charged), and the charging device 82 The image is sent again for image formation in the fixing device 86. In this way, the image forming system 80 forms and records an image on the continuously supplied recording medium P.

  The light emitting device, the method for manufacturing the light emitting device, the optical printer head, and the image forming system of the present invention have been described above. However, the present invention is not limited to the above-described embodiments, and does not depart from the gist of the present invention. Of course, various improvements and modifications may be made.

DESCRIPTION OF SYMBOLS 1 Light-emitting device 10 Light-emitting element 11 Substrate 11a One main surface 11b Side surface 12 Light-emitting part 12a One-conductivity-type semiconductor layer 12b Reverse-conductivity-type semiconductor layer 14 Insulation protective layer 14a First insulation film 14b Second insulation film 14c Third insulation Film 15 Conductor wiring 15a Connection wiring 15b Lead wiring 18 Inclined portion 20 Circuit board 20a Upper surface 22 Conductor 30 Joining member 40 Conductive layer 42A Opening 50 Single crystal substrate 52 Groove 54 Inner surface 60 Photocurable resin material 70 Optical print head

Claims (12)

Insulating protection covering at least a part of the light emitting part and at least a part of the one main surface, and a light emitting part having a plurality of semiconductor layers stacked on one main surface side of the substrate A light emitting device having a layer;
A circuit board on which the light-emitting element is mounted, having an upper surface facing the other main surface of the substrate and a conductor portion provided on the upper surface;
An insulating bonding member that is attached from the upper surface of the circuit board to a side surface of the substrate and bonds the circuit board and the substrate;
A conductor layer that passes through the surface of the bonding member and the surface of the insulating protective layer and electrically connects the conductor portion and the light emitting element;
The substrate of the light emitting element has an inclined portion connected to the one main surface and the side surface at a peripheral portion of the one main surface on the side surface side,
The insulating protection layer is covered from the one main surface of the substrate to the inclined portion, and the insulating member covers the inclined portion from the upper surface of the circuit board and the side surface of the substrate. A light-emitting device, characterized by being applied over the surface of the layer.   The light emitting device according to claim 1, wherein a virtual plane including the one main surface and a virtual plane including the side surface of the substrate are substantially orthogonal.   3. The light emitting device according to claim 1, wherein the inclined portion includes a crystal plane that has appeared by subjecting the substrate to anisotropic etching. 4.   The light emitting device according to any one of claims 1 to 3, wherein the joining member is obtained by curing a photocurable resin material.   A plurality of the light emitting portions are provided on the substrate, the joining member is continuously arranged over a region corresponding to the plurality of light emitting elements, and the conductor layer corresponds to a plurality of the light emitting elements. The light-emitting device according to claim 1, wherein the light-emitting device is continuously arranged over the entire area.   The light emitting device according to claim 1, wherein an end portion of the joining member is located in a region corresponding to the inclined portion. A method for manufacturing a light emitting device according to claim 1,
Preparing a substrate and forming the light emitting part on the substrate;
A step of forming a groove portion having a narrow width and an inclined inner surface as it proceeds in the depth direction on one main surface of the substrate;
Forming an insulating protective layer covering the one main surface of the substrate and the inner surface of the groove;
By cutting the substrate along the groove so as to leave a part of the inner surface, the substrate has a side surface made of a cut surface and an inclined portion made of a part of the inner surface connected to the side surface, and Obtaining a light emitting element comprising a light emitting part provided on the substrate;
Preparing a circuit board provided with a wiring pattern on an upper surface, and placing the light emitting element on the upper surface of the circuit board;
Attaching a bonding member from the upper surface of the circuit board to the surface of the insulating protective layer covering the side surface of the substrate and the inclined portion of the substrate, and bonding the light emitting element to the circuit board;
And a step of forming a conductor layer that electrically connects the conductor portion and the light emitting element through the surface of the bonding member and the surface of the insulating protective layer.   8. The method of manufacturing a light emitting device according to claim 7, wherein in the step of obtaining the light emitting element, the substrate is diced and cut along the groove.   9. The method for manufacturing a light emitting device according to claim 7, wherein the groove is formed by wet etching the substrate in the step of forming the groove.   The method of manufacturing a light emitting device according to claim 9, wherein the wet etching is anisotropic wet etching. A light emitting device according to any one of claims 1 to 6;
A lens that forms an image by transmitting light emitted from the light emitting element of the light emitting device;
An optical printer head comprising: a support member that supports the lens with the light emitting device. An optical printer head according to claim 11;
A control unit for sending an image signal to the optical printer head;
A photoconductor irradiated with light emitted from the light emitting element according to the image signal through the lens;
Prior to irradiation with light from the light emitting element, a charging unit for charging the surface of the electrophotographic photosensitive member,
A developing unit that develops an electrostatic latent image corresponding to the image signal and forms a toner image formed on the surface of the electrophotographic photosensitive member by being irradiated with light from the light emitting element;
An image forming system comprising: a transfer unit that transfers the toner image to the surface of the recording medium.

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