JP2012064806A - Charged particle beam drawing device and device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a charged particle beam drawing device advantageous for mitigating positioning accuracy of a shutter blade.SOLUTION: The charge particle beam drawing device includes: a generation section for generating a plurality of charged particle beams; a blanking section for controlling the plurality of charged particle beams to an on state or an off state respectively by a plurality of deflectors 218; the shutter blade; and a control section 100. On the basis of information specifying the deflector incapable of turning the charged particle beam to the off state among the plurality of deflectors as an abnormal deflector and information on the positioning accuracy of a shutter mechanism 225, the control section executes first control of controlling the shutter mechanism so as to completely cut off a first charged particle beam corresponding to the abnormal deflector, and second control of controlling the blanking part so as to turn a second charged particle beam which is different from the first charged particle beam and has the possibility of being at least partially cut off by the shutter blade by the first control to the off state.

Description

  The present invention relates to a charged particle beam drawing apparatus and a device manufacturing method used for manufacturing a device such as a semiconductor integrated circuit.

  In recent years, electron beam lithography apparatuses used in the manufacture of semiconductor integrated circuits have become increasingly finer, more complex circuit patterns, and larger patterns of data in semiconductor integrated circuits. Improvement is demanded. For this reason, a multi-beam electron beam is formed by deflecting a plurality of electron beams all at once and performing drawing by turning on / off the electron beam irradiation to the exposed portion / exposed portion of the substrate to be exposed. In recent years, development of drawing apparatuses has been actively promoted.

  Patent Document 1 proposes a multi-electron beam drawing apparatus that blocks an abnormal electron beam. The multi-electron beam drawing apparatus described in Patent Document 1 includes a movable shutter mechanism having an opening through which a normal electron beam can selectively pass on an electron beam path. The multi-electron beam drawing apparatus described in Patent Document 1 suppresses a reduction in drawing processing speed as much as possible by using only a normal electron beam that selectively passes through the opening of the movable shutter mechanism. ing.

  The multi-electron beam drawing apparatus performs on / off control by using a blanking deflector so that a plurality of electron beams are individually incident on the substrate and an off state in which the plurality of electron beams are not incident on the substrate. The multi-electron beam drawing apparatus draws predetermined drawing data at a predetermined position on the substrate by performing the on / off control. In the blanking deflector, electrodes are arranged to face each other so as to face an electron beam passing through each electron beam aperture, and wiring is also formed on each electrode. By applying a voltage between the electrodes to electrostatically deflect the electron beam and collide with the stopping aperture, the electron beam is turned off (blocked). Therefore, when an electrode defect or wiring breakage occurs, voltage cannot be applied to the electrode, and the electron beam cannot be turned off. The opening of the blanking deflector in which the electron beam cannot be turned off will be referred to as a “white defect”. Conversely, an opening in which the electron beam cannot be completely turned on due to dust adhering to the opening of the blanking deflector is called a “black defect”. Further, an opening in which the electron beam can be turned on only incompletely is referred to as a “gray defect”. The black defect and the gray defect may occur not only in the blanking deflector but also in dust adhering to each opening of the aperture array, electrostatic lens, blanking aperture, deflector, etc., or disconnection of the wiring.

  With the miniaturization of semiconductor integrated circuits, the size of the electron beam tends to become finer. In addition, in order to improve the productivity of a semiconductor integrated circuit, there is a tendency to employ a method of increasing the number of electron beams that can be drawn simultaneously to increase the drawing area. Due to the miniaturization of electron beams and apertures and the increase in the number of electron beams, the probability of occurrence of defects in the blanking deflector tends to increase, and there is a problem that correct drawing cannot be performed when there are defects. In order to repair the defect, an exchange work is required, and the exchange work is complicated, so that the downtime of the apparatus becomes long. Therefore, Patent Document 1 proposes a multi-electron beam drawing apparatus that can continue to be used even if there is a white defect blanking deflector.

JP 2006-245176 A

  However, in order to further improve the productivity, the number of electron beams is increased to tens of thousands to several millions, and the pitch between the electron beams tends to be several μm to several tens of μm. Here, a problem when the movable shutter mechanism in the multi-electron beam drawing apparatus described in Patent Document 1 is used will be described. When positioning accuracy in driving the shutter mechanism is on the order of several tens of μm or more, there is a possibility that the electron beam may be accidentally shielded on the boundary line of the light shielding area by the shutter blade or in the adjacent area. There is. When this state occurs, a black defect state or a gray defect state occurs. When the black defect state and the gray defect state occur in this way, it becomes impossible to perform drawing on the substrate normally. In order to avoid the above problem, if the positioning accuracy of the shutter mechanism is set to several μm order or less, there is a concern about an increase in cost for the shutter mechanism.

  The present invention has been made in view of the above points, and an object of the present invention is to provide a charged particle beam drawing apparatus that is advantageous in relaxing positioning accuracy of a shutter blade.

  The present invention is a charged particle beam drawing apparatus for drawing a pattern on a substrate while controlling each of a plurality of charged particle beams to an on state in which the charged particle beam is incident on the substrate or an off state in which the charged particle beam is not incident on the substrate. A generation unit that generates a plurality of charged particle beams, a blanking unit that includes a plurality of deflectors, and controls the plurality of charged particle beams to an on state or an off state by the plurality of deflectors, and a shutter blade A shutter mechanism that blocks at least a part of the plurality of charged particle beams by positioning the shutter blade, and a control unit, wherein the control unit is a charged particle beam of the plurality of deflectors. On the basis of information for identifying a deflector that cannot be turned off as an abnormal deflector and information on the positioning accuracy of the shutter mechanism. A first control for controlling the shutter mechanism such that the first charged particle beam corresponding to the first charged particle beam is completely blocked by the shutter blade, and a second charged particle beam different from the first charged particle beam, And a second control for controlling the blanking unit so as to turn off a second charged particle beam that may be at least partially blocked by the shutter blade by the first control. .

  ADVANTAGE OF THE INVENTION According to this invention, the charged particle beam drawing apparatus advantageous for the relief | moderation of the positioning accuracy of a shutter blade can be provided, for example.

It is a figure which shows the structure of a multi electron beam drawing apparatus. It is a figure which shows the flowchart which calculates the beam area | region which is not used for drawing. It is a figure which shows the aperture array and opening of a white defect in 1st Embodiment. It is a figure which shows the light shielding by the shutter mechanism in a prior art example. It is a figure which shows the light shielding by the shutter mechanism which has a drive error in a prior art example. It is a figure which shows the drive position of the shutter blade in 1st Embodiment. It is a figure which shows the area | region which turns off an electron beam with the normal blanking deflector in 1st Embodiment. It is a figure which shows the area | region which turns off an electron beam with the drive position of the shutter blade in 2nd Embodiment, and a normal blanking deflector. It is a figure which shows arrangement | positioning of the opening of the aperture array in 3rd Embodiment. It is a figure which shows the area | region which turns off an electron beam by the drive position of the shutter blade in 3rd Embodiment, and a normal blanking deflector. It is a figure which shows the 2 sheet structure of a shutter blade. It is a figure which shows the 4 sheet structure of a shutter blade. It is a figure which shows the structure of the shutter blade provided with the opening part.

  The present invention can be applied to a charged particle beam drawing apparatus that performs drawing by irradiating a plurality of charged particle beams onto a substrate. However, the present invention is applied to an electron beam drawing apparatus that performs drawing using a plurality of electron beams. explain.

[First Embodiment]
FIG. 1 is a diagram showing a configuration of a multi-electron beam drawing apparatus that draws a pattern on a substrate with a plurality of electron beams. The electron gun 211 forms a crossover image 212. The electron beam diverging from the crossover image 212 becomes a parallel beam by the action of the collimator lens 213 formed of an electromagnetic lens, and is incident on the aperture array 216. The aperture array 216 has a plurality of circular openings arranged in a matrix, and the incident electron beam is divided into a plurality of electron beams. The electron gun 211, the collimator lens 213, and the aperture array 216 constitute a generation unit that generates a plurality of electron beams (charged particle beams).

  The electron beam that has passed through the aperture array 216 is incident on an electrostatic lens 217 that is composed of three electrode plates (three in the figure are shown integrally) having a circular opening. A blanking aperture 219 having openings arranged in a matrix is disposed at a position where the electrostatic lens 217 first forms a crossover image. The individual on / off operation of the electron beam by the blanking aperture 219 is executed by a plurality of blanking deflectors (deflectors) 218 arranged in a matrix. Each blanking deflector 218 controls each electron beam to an on state in which the electron beam is individually incident on the substrate 222 or an off state in which the electron beam is not incident on the substrate. The blanking deflector 218 is controlled by a circuit 105 that controls blanking. The circuit 105 for controlling blanking is controlled by a blanking signal generated by a circuit 102 for generating a drawing pattern, a circuit 103 for converting to a bitmap, and a circuit 104 for generating an energy amount command. The blanking deflector 218, the blanking aperture 219, the circuit 105 that controls blanking, and the like constitute a blanking unit.

  The electron beam that has passed through the blanking aperture 219 is imaged by the electrostatic lens 221, and the original crossover image 212 is imaged on the substrate 222 such as a wafer or a mask or the electron beam detector 224. While the pattern is drawn on the substrate 222, the substrate 222 is continuously scanned in the Y direction by the stage 223, and the image on the surface of the substrate 222 is deflected based on the length measurement result of the stage 223 by a laser length measuring device or the like. Deflector 220 deflects in the X direction. Further, the electron beam is turned on / off at a timing required for drawing by the blanking deflector 218. The deflector 220 is controlled by transmitting the deflection signal generated by the circuit 109 that generates the deflection signal to the deflection amplifier 110.

  The shutter mechanism 225 drives at least a part of the plurality of electron beams by driving the shutter blade in the X direction, the Y direction, or both XY directions in a plane perpendicular to the electron beam passage direction (a plane intersecting the charged particle beam). Can be shut off. As a result, the shutter mechanism 225 can block the electron beam that has become abnormal due to the blanking deflector 218 and cannot be turned off.

  The signal processing circuit 107 detects a signal (output) from the electron beam detection unit 224 and performs signal processing. The collimator lens 213 and the electrostatic lens 217 are controlled by the lens control circuit 101, the electrostatic lens 221 is controlled by the lens control circuit 106, and the shutter mechanism 225 is controlled by the shutter control circuit 111. Further, the controller 100 controls all the drawing operations. The data storage circuit 112 stores various data used when the controller 100 controls and performs a drawing operation, and data related to various control circuits. The circuit 113 for calculating the blocking region calculates a region for blocking the electron beam. The controller 100, the shutter control circuit 111, and the like constitute a control unit.

  FIG. 2 is a diagram illustrating a flowchart for calculating a beam region not used for drawing. In S301, the characteristics of all electron beams are measured using the electron beam detector (detector) 224. The controller 100 acquires, from the output of the electron beam detector 224, information that identifies a blanking deflector that cannot turn off (cut off) the electron beam, that is, a first defect deflector having white defects. The controller 100 turns on / off one electron beam for each single electron beam detector 224, measures the beam current, and determines whether each blanking deflector is a white defect. Alternatively, the controller 100 determines whether or not there are white defects for a plurality of electron beams at a time by the plurality of electron beam detection units 224. That is, the controller 100 performs arithmetic processing on the detection information detected by the electron beam detector 224 and processed by the signal processing circuit 107 to determine whether or not the blanking deflector is a white defect. The controller 100 cannot pass a part of the electron beam even if it is turned on not only with the first abnormal deflector with white defects but also with the second abnormal deflector with black defects that cannot turn on the electron beam. A third anomalous deflector with a gray defect can also be identified together. The white defect first abnormal deflector, the black defect second abnormal deflector, and the gray defect third abnormal deflector are collectively referred to as an abnormal deflector.

  In step S302, the controller 100 determines whether there is a white defect deflector. If there is no white defect deflector, the process proceeds to S305. In S303, the controller 100 determines a region where the electron beam is shielded by the shutter mechanism 225, and further calculates the driving position of the shutter blade. FIG. 3 is a view of the aperture array 216 of the multi-electron beam drawing apparatus viewed from the collimator lens 213 side in the previous stage. The aperture array 216 has a plurality of circular openings 401 arranged two-dimensionally in a matrix. The number of openings 401 is actually several tens of thousands to several million, but here is an aperture array having a total of 36 openings of 6 columns in the X direction and 6 rows in the Y direction. L1 has an opening diameter of several μm to several hundred μm, and L2 has an opening interval of several μm to several tens of μm. Also, the black-colored opening 402 in the figure shows an opening corresponding to an electron beam that cannot be turned off because the blanking deflector 218 in the subsequent stage has a white defect. The circuit 113 for calculating the blocking area determines how to block light using the shutter mechanism 225. At this time, the circuit 113 for calculating the blocking region determines that the electron beam region shielded by the shutter blade is relatively small. Next, the controller 100 calculates the driving position of the shutter blade.

  FIG. 4 is a diagram showing the drive target position of the shutter blade 226 calculated according to the conventional example and the effect of light shielding by the shutter mechanism 225. When the shutter blade 226 is driven to the drive target position, the electron beam incident on the opening 402 is shielded, and the electron beam can be turned off even if there is a white defect blanking deflector 218. The vertical dotted line in the figure shows the drive target position 403 at the right end of the shutter mechanism 225 in the conventional example. This figure shows a case where the shutter blade 226 is accurately driven to the drive target position. As a result, since the electron beam of the white defect that continues to be turned on with respect to the substrate 222 can be shielded, it is possible to perform drawing at a predetermined position on the substrate 222 using a plurality of normal electron beams that are not shielded. Become. However, the shutter mechanism 225 always has a driving error with respect to the driving operation. Here, it is assumed that the drive error is a maximum ± ΔX. FIG. 5 is a diagram illustrating a case where the drive target position 403 of the shutter blade 226 is stopped at a position shifted by −ΔX from the target position with respect to the X axis due to a drive error. FIG. 5 also shows the driveable direction 404 of the shutter blade 226. In this case, since the electron beam to the white defect opening 402 cannot be properly shielded by the shutter blade 226, the white defect that cannot be turned off continues to remain. Therefore, the drive target position 403 of the shutter blade 226 needs to be set more appropriately in consideration of the drive error ± ΔX. The driving error is the positioning accuracy of the shutter blade 226. For example, the driving error is expressed by a predetermined calculation formula such as “absolute value of the average value of misalignment amount” + n * “standard deviation of misalignment amount” (n is a positive integer). Therefore, it can be obtained.

  FIG. 6 is a diagram showing the drive target position 405 in the present invention calculated in consideration of the drive error ± ΔX. The circuit 113 for calculating the cut-off area sets the drive target position 405 at least + ΔX away from the right end of the white defect opening 402 in the positive direction of the X axis. As a result, even when a driving error occurs in the shutter blade, it is guaranteed that the opening 402 is completely blocked. Thus, the control unit performs the first control for controlling the shutter mechanism 225 so that the electron beam (first charged particle beam) corresponding to the white deflector abnormal deflector is completely blocked by the shutter blade 226. The calculated drive target position 405 is stored in the data storage circuit 112. The drive error ± ΔX can be set based on the positioning accuracy in designing the shutter mechanism 225. Manufacturing errors and assembly errors of the shutter mechanism 225 may be included in the driving error. Further, numerical values may also be taken into account in terms of manufacturing placement errors and opening diameter errors of the openings arranged in the aperture array 216. Further, a range from the shutter end that optically adversely affects the electron beam by the shutter blade 226 may be calculated in advance, and a numerical value that takes this influence range into consideration may be used. The drive error ± ΔX can also be estimated by measurement on the multi-electron beam drawing apparatus. The shutter blade 226 is driven to a certain target position. In this state, the beam current of the entire electron beam or a specific electron beam is measured by the electron beam detector 224, and the correspondence between the electron beam regions that become gray defects and black defects is investigated. By performing this operation a plurality of times, and further by performing a plurality of times while changing the driving position of the shutter blade 226, it is possible to estimate a driving error in units of rows or columns in a two-dimensional arrangement of electron beams. It becomes. For the drive error described above, a larger numerical value may be set as the final drive error in consideration of a certain margin. The drive error (positioning accuracy of the shutter mechanism) is stored in advance in the data storage circuit 112 or stored after estimation by measurement on the multi-electron beam drawing apparatus.

  In S <b> 304, the controller 100 calculates a region where the electron beam is kept off during drawing by the normal blanking deflector 218. FIG. 7 is a diagram illustrating a case where the shutter blade 226 stops at a position shifted by + ΔX in the X-axis direction due to a drive error with respect to the drive target position 405. In this case, on the boundary line at the right end of the shutter blade 226, the opening 401 of the normal blanking deflector 218 is shielded halfway, creating a gray defect state. In FIG. 7, six aperture groups 406 are gray defects. The circuit 113 that calculates the blocking area calculates the area of the aperture group 406 that may cause a gray defect in consideration of the driving error of the shutter mechanism 225. A blanking deflector 218 corresponding to the aperture group 406 keeps the electron beam off during writing. In this way, the control unit controls the blanking deflector 218 to turn off an electron beam (second charged particle beam) that may be at least partially blocked by the shutter blade 226 by the first control. The second control is performed. The area of the aperture group 406 is stored by the data storage circuit 112.

  In step S305, the controller 100 indicates a function of storing an electron beam area that is not used during drawing. The controller 100 newly stores the aperture group 406 that becomes a gray defect on the boundary line of the shutter blade 226 stored in S304 as an electron beam region that is not used during drawing. The controller 100 also stores an area that is shielded by the shutter mechanism 225 as an electron beam area that is not used for drawing.

  When performing drawing on the substrate 222, the controller 100 moves the shutter blade 226 to the drive target position 405, and further performs drawing using an electron beam outside the electron beam region not used for drawing. As a result, it is possible to perform drawing at a predetermined position on the substrate 222.

  In the first embodiment, in S303, only the white defect opening of the blanking deflector 218 is focused and the area shielded by the shutter mechanism 225 is calculated. However, the shutter mechanism 225 includes black defects and gray defects. The light shielding area may be calculated so as to shield the light. Further, the black defect and the gray defect are not only caused by the blanking deflector 218 but also include defects caused by each element such as the aperture array 216, the electrostatic lens 217, the blanking aperture 219, the deflector 220, and the like. The light shielding area may be calculated. In the first embodiment, in S305, the electron beam region that can be a gray defect on the right boundary line of the shutter mechanism 225 and the electron beam region shielded by the shutter mechanism 225 are stored as electron beam regions that are not used for drawing. ing. However, a black defect or a gray defect existing in an area different from the light shielding area by the shutter mechanism 225 may be stored as an electron beam area not used for drawing. In the first embodiment, the controller 100 and the data storage circuit 112 are described separately. However, the controller 100 may have a function equivalent to that of the data storage circuit 112. Similarly, the controller 100 may have a function equivalent to that of the circuit 113 for calculating the cutoff region.

[Second Embodiment]
In the second embodiment, the driving error of the shutter mechanism 225 is sufficiently large with respect to the aperture diameter. FIG. 8 is a diagram showing a target drive position 405 of the shutter blade 226 when the driving error of the shutter mechanism 225 is sufficiently large with respect to the opening diameter, and the opening group 406 that may cause a gray defect. FIG. 8 also shows openings 401 arranged in the aperture array 216 and openings 402 where white defects are present. ± ΔX in FIG. 8 indicates a driving error range of the shutter mechanism 225. FIG. 8 shows a case where the right end of the shutter blade 226 stops at the drive target position 405. Since the driving error of the shutter mechanism 225 is large, the aperture group 406 that may cause a gray defect also becomes a large region. For the electron beam aperture group 406 that may become a gray defect in a region adjacent to the light shielding region by the shutter mechanism 225, the normal blanking deflector 218 is used to keep the electron beam off during drawing. It is sufficient to operate as follows.

[Third Embodiment]
In the third embodiment, as shown in FIG. 9, the aperture array 216 has an opening arrangement different from that of the first embodiment and the second embodiment. The openings 401 are staggered so as to be offset from each other by a distance L3 in the X direction from a perfect lattice-shaped opening arrangement having N rows in the X direction and M columns in the Y direction. In FIG. 9, the columns in the X direction are sequentially shifted from the top to the next column by L3, and the amount of displacement is the same as L1, and the position of the opening 401 in the X direction is periodically the same position as the first row. become. An area formed by the length L5 in the Y direction and the length L4 of the beam area in the X direction of this cycle is called a staggered block.

  FIG. 10 is a diagram illustrating a target drive position 405 of the shutter blade 226 with respect to the opening 402 in which a white defect exists, and an opening group 406 that may become a gray defect. In FIG. 10, the aperture 402 has six rows in the X direction and six columns in the Y direction, and is an aperture array 216 including two staggered blocks. ± ΔX in FIG. 10 indicates a driving error range of the shutter mechanism 225. FIG. 10 shows a case where the right end of the shutter blade 226 stops at the drive target position 405. For the aperture group 406 in which a gray defect may occur, a normal blanking deflector 218 may be used so as to keep the electron beam off during writing.

[Fourth Embodiment]
In the first to third embodiments, only one shutter blade 226 has been described. However, the number is not necessarily one. FIG. 11 shows a case where there are two openings 402 corresponding to the blanking deflector 218 of the white defect in the aperture array 216. The shutter mechanism 225 can include a plurality of shutter blades 226a and 226b that can be independently driven in the X-axis direction. As a result, the area of the electron beam to be shielded can be made narrower than when only one shutter blade 226 is provided, and the reduction in processing time during drawing can be suppressed to a lower level. In this case, the drive target positions of the shutter blades 226a and 226b are calculated from the right end of the shutter blade 226a and the left end of the shutter blade 226b. In addition, the normal blanking deflector 218 is used to calculate a region where the electron beam is kept off during writing. Instead of configuring two shutter blades that can be driven in the X-axis direction, two shutter blades that can be independently driven in the Y-axis direction may be configured. Further, one shutter blade that can be independently driven in two directions (X-axis direction and Y-axis direction) orthogonal to each other may be configured.

  FIG. 12 shows a case where there are four openings 402 corresponding to the white defect blanking deflector 218 in the aperture array 216. In some cases, white defect openings are simultaneously present in the vicinity of the four sides of the aperture array 216. As shown in FIG. 12, two shutter blades 226a and 226b that can be independently driven in the X-axis direction are configured, and two shutter blades 226c and 226d that can be independently driven in the Y-axis direction are additionally configured. Anyway.

  The case where the shutter blade that can be driven only in one axis direction of the X axis direction or the Y axis direction has been described above. However, a shutter blade that can be driven in two axis directions of the XY axis direction may be used. FIG. 13 is a diagram illustrating a situation where the opening corresponding to the blanking deflector 218 for white defects is shielded by using a shutter blade 226 that can be driven in two axial directions. Further, the movable shutter blade 226 provided with the aperture may be configured in two stages in the Z-axis direction so that the area of the electron beam to be shielded becomes narrower.

[Device manufacturing method]
The device manufacturing method according to a preferred embodiment of the present invention is suitable for manufacturing a semiconductor device or an FPD device, for example. The method may include a step of drawing the electron beam drawing apparatus on a substrate coated with a photosensitive agent, and a step of developing the substrate on which the pattern is drawn. Furthermore, the device manufacturing method may include other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, and the like).

Claims (6)

A charged particle beam drawing apparatus that draws a pattern on a substrate while controlling each of a plurality of charged particle beams to an on state in which the charged particle beam enters the substrate or an off state in which the charged particle beam does not enter the substrate,
A generator for generating a plurality of charged particle beams;
A blanking unit that includes a plurality of deflectors, and controls the plurality of charged particle beams to an on state or an off state by the plurality of deflectors;
A shutter mechanism including a shutter blade and blocking at least some of the plurality of charged particle beams by positioning the shutter blade;
A control unit;
With
The controller is
Based on information for identifying a deflector that cannot turn off a charged particle beam as an abnormal deflector among the plurality of deflectors and information on positioning accuracy of the shutter mechanism, the first corresponding to the abnormal deflector. A first control for controlling the shutter mechanism so that one charged particle beam is completely blocked by the shutter blade;
A second charged particle beam different from the first charged particle beam, wherein the second charged particle beam, which may be at least partially blocked by the shutter blade by the first control, is turned off. Performing a second control for controlling the blanking section;
A charged particle beam drawing apparatus. A detector for detecting the abnormal deflector;
The controller is
Obtain information identifying the abnormal deflector from the output of the detection unit,
Based on the acquired information and the information on the positioning accuracy, a driving target position of the shutter blade is calculated,
Determining a second charged particle beam to be turned off by the blanking unit based on the calculated drive target position information and the positioning accuracy information;
The charged particle beam drawing apparatus according to claim 1.   3. The charged particle according to claim 1, wherein the control unit performs the first control using a deflector that cannot pass only a part of the charged particle beam as the abnormal deflector. 4. Line drawing device.   The charged particle beam drawing apparatus according to any one of claims 1 to 3, wherein the shutter mechanism includes a plurality of the shutter blades.   5. The charged particle beam drawing apparatus according to claim 1, wherein the shutter mechanism positions the shutter blade along a plane that intersects the plurality of charged particle beams. 6. . Drawing a pattern on a substrate using the charged particle beam drawing apparatus according to any one of claims 1 to 5,
Developing a substrate on which the pattern is drawn;
A device manufacturing method comprising:

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