JP2012054616A5 - - Google Patents

Description

Plasma etching method

The present invention relates to a plasma etching method for plasma etching a silicon carbide substrate.

  Conventionally, in the field of semiconductors, silicon substrates (Si substrates) have been widely used as substrate materials, but in recent years, wide gap semiconductor substrates having better physical properties than silicon substrates have attracted attention. This wide gap semiconductor substrate is generally characterized by a smaller crystal lattice constant and a larger band gap than silicon and gallium arsenide (GaAs). For example, silicon carbide (SiC), gallium nitride (GaN), nitride At least one of boron (B), carbon (C), nitrogen (N) and oxygen (O), such as aluminum (AlN), zinc oxide (ZnO), boron nitride (BN) and boron phosphide (BP) It is comprised including.

The silicon carbide substrate belonging to the wide gap semiconductor substrate has a small crystal lattice constant, that is, a strong bond between atoms and excellent physical properties, but a strong bond between atoms makes etching difficult. Has the disadvantages. Therefore, conventionally, as a method for plasma etching of such a silicon carbide substrate, for example, up plasma etching method disclosed in JP 2008-294210 has been proposed.

In this plasma etching method, a mask forming step of forming a silicon dioxide film (SiO ₂ film) having a mask pattern of a predetermined shape on the surface of a silicon carbide substrate, and a mixed gas of SF ₆ gas, O ₂ gas and Ar gas are used. A first etching step of plasma etching the silicon carbide substrate using the silicon dioxide film as a mask using the etching gas, a mixed gas of Ar gas and O ₂ gas as an etching gas, and using the silicon dioxide film as a mask The second etching step of plasma etching the silicon carbide substrate is sequentially performed. In the first etching step, the ratio of SF ₆ gas, O ₂ gas and Ar gas is set to a predetermined ratio, and the atmospheric pressure is set to a predetermined value. 0.5 Pa or less, the silicon carbide substrate is heated to 70 ° C. to 100 ° C., and in the second etching step, , And the ratio a predetermined ratio of Ar gas and _{O 2} gas, the atmosphere pressure of less 0.5 Pa, so as to heat the silicon carbide substrate 70 ° C. to 100 ° C..

JP 2008-294210 A

By the way, for example, when plasma etching of silicon (Si), the temperature of the substrate is usually limited to a temperature of up to 100 ° C. This is because when the temperature of the substrate exceeds 100 ° C., the etching is likely to proceed isotropically or the protective film is difficult to be formed, so that the etching shape is deteriorated (it is difficult to perform anisotropic etching). This is because the resist film having low heat resistance causes a problem that the shape accuracy of the mask pattern decreases due to the softening of the resist film. Also, when plasma etching silicon dioxide (SiO ₂ ), the heating temperature of the substrate is limited to a temperature of up to 100 ° C., as described above, due to the low heat resistance of the resist film serving as a mask. Is common.

  In the conventional plasma etching method as well, the silicon carbide substrate is etched by being heated to 70 ° C. to 100 ° C., and the temperature is controlled to 100 ° C. similarly to the silicon and silicon dioxide.

However, the inventors have found, after extensive research, the substrate to be plasma etching, when the bond between atoms is strong carbide substrate, the silicon carbide substrate to a temperature higher than 100 ° C. It came to know that etching accuracy improves when heated and etched.

The present invention has been made as a result of repeated experiments conducted by the inventors of the present invention on the heating temperature of a silicon carbide substrate capable of performing high-precision plasma etching, and is capable of etching a silicon carbide substrate with high accuracy. An object is to provide an etching method.

To achieve the above object, the present invention provides:
A processing chamber having a closed space; a base on which a silicon carbide substrate is placed; an exhaust device that decompresses the inside of the processing chamber; a gas supply device that supplies gas into the processing chamber; and a coil ; Using an etching apparatus provided with a plasma generating apparatus that supplies high-frequency power to the coil to convert the gas supplied into the processing chamber into plasma, and a high-frequency power source that supplies high-frequency power to the base, A method of plasma etching a silicon carbide substrate on a base,
After placing the silicon carbide substrate on the base, in the exhaust device wherein the processing chamber is depressurized by the supplying SF ₆ gas as an O Ri etching gas to the gas supply device, supplying the SF ₆ gas plasma the by the plasma generating apparatus, and, with etching the silicon carbide substrate by applying a bias potential to said base by said high frequency power source, is etched in a state of heating the silicon carbide substrate 200 ° C. to 400 ° C. The present invention relates to a plasma etching method.

According to the present invention, a silicon carbide board Upon plasma etching, and heating the silicon carbide substrate 200 ° C. to 400 ° C.. This is because, as a result of the study by the inventors of the present application, when a silicon carbide substrate having a strong bond between atoms is etched using the etching apparatus, the heating temperature of the silicon carbide substrate is 200 ° C. It is because it became clear that it was preferable to be -400 degreeC.

That is, according to the study by the present inventors, when the heating temperature of the silicon carbide substrate K is low, the hole H formed by etching or the groove H on the side wall of the bottom surface of the groove H is formed as shown in FIG. 'Is further formed, and an accurate etching shape cannot be obtained. However, when the heating temperature of the silicon carbide substrate K is gradually increased, as shown in FIG. 2B, the size of the groove H ′ to be formed gradually decreases, and finally, FIG. As shown in (c), the groove H ′ is not formed.

Further, when the heating temperature of the silicon carbide substrate K is gradually increased from the heating temperature at which the groove H ′ is no longer formed, the etching easily proceeds isotropically, and FIG. 2 (d) and FIG. 2 (e). As shown in FIG. 5, the etching is performed up to the side wall of the hole H or the groove H. The atoms constituting the silicon carbide substrate K do not react with radicals and ions generated by the plasma formation of the etching gas unless the bond is broken. However, the higher the temperature of the silicon carbide substrate K, the more the atoms. Since the bonds between them are easily broken, and radicals and ions generated by the plasma of the etching gas easily react with atoms constituting the silicon carbide substrate K, etching by this reaction proceeds efficiently. Incidentally, For the silicon carbide substrate K, one binding to the silicon (Si) and carbon (C) is strong, easily broken bond between them by its temperature increases, etched easily. Therefore, as the heating temperature of silicon carbide substrate K increases, etching of silicon carbide substrate K proceeds isotropically, and the sidewalls of holes H and grooves H are more easily etched. 2D and 2E show the etching shape when the heating temperature of the silicon carbide substrate K is higher in FIG. 2E. Moreover, in FIG. 2, the code | symbol M has shown the mask.

And based on such points, when the relationship between the heating temperature of the silicon carbide substrate and the etching shape was investigated, if the heating temperature of the silicon carbide substrate was 200 ° C. to 400 ° C., when performing plasma etching, The groove H ′ is not formed at all on the bottom surface of the hole H or the groove H, or even if it is formed, it is very small, and the side wall of the hole H or the groove H is not etched at all or is etched. It was confirmed that there was very little. Therefore, if the silicon carbide substrate is heated to 200 ° C. to 400 ° C., the silicon carbide substrate can be etched with high accuracy. The heating temperature of the silicon carbide substrate is more preferably in the range of 300 ° C to 400 ° C.

Thus, according to the plasma etching method of the present invention, when the silicon carbide substrate is plasma-etched, the silicon carbide substrate is heated to 200 ° C. to 400 ° C., so that the silicon carbide substrate is accurately etched. be able to.

By the way, in order to increase the temperature of the silicon carbide substrate from the temperature T ₀ before heating to the temperature T ₁ during the etching process (200 ° C. ≦ T ₁ ≦ 400 ° C.), as shown in FIG. It takes. When the temperature of the silicon carbide substrate begins to etch the silicon carbide substrate by supplying an etching gas into the processing chamber before reaching the etching temperature T _1, the temperature etching of the silicon carbide substrate from the start of the etching temperature T Until the temperature reaches ₁ , the etching process conditions vary due to the temperature change of the silicon carbide substrate. Therefore, the silicon carbide substrate cannot be etched with high accuracy (for example, when the temperature of the silicon carbide substrate is low). The groove H ′ formed by etching as shown in FIGS. 2A and 2B is not completely eliminated even by etching after the temperature of the silicon carbide substrate reaches the etching processing temperature T _1. ) And the etching rate becomes non-uniform.

Therefore, after the silicon carbide substrate, the temperature of pre-heated until reaching the temperature at the time of etching, while maintaining the temperature of the silicon carbide substrate to a temperature of at the etching, the silicon carbide substrate by plasma state etching gas If etching is performed, the temperature change of the silicon carbide substrate after the start of the etching process can be prevented and the etching process can be stabilized, so that the silicon carbide substrate can be accurately etched or the etching rate becomes non-uniform. Can be prevented.

Note that when the silicon carbide substrate is heated to the temperature at the time of etching, an inert gas is supplied into the processing chamber to form plasma, and a bias potential is applied to the base to the ions generated by the plasma of an active gas is incident on the silicon carbide substrate may be heated to the silicon carbide substrate. In this way, the silicon carbide substrate can be raised to a predetermined temperature while preventing etching due to ion incidence. Further, the silicon carbide substrate can be heated only by generating plasma of an inert gas without newly providing a heating means for heating the silicon carbide substrate.

In order to maintain the temperature of the silicon carbide substrate at a constant temperature, it is preferable to heat the silicon carbide substrate by the incidence of ions generated by turning the etching gas into plasma.

In addition, when the silicon carbide substrate is heated, it may be heated by a heater, or may be heated by both ion incidence and the heater. Further, when the temperature of the silicon carbide substrate is excessively increased, cooling of the silicon carbide substrate may be combined.

As described above, according to the plasma etching method of the present invention, high-precision plasma etching can be performed by setting the heating temperature of the silicon carbide substrate to 200 ° C. to 400 ° C.

It is sectional drawing which showed schematic structure of the etching apparatus for enforcing the plasma etching method which concerns on one Embodiment of this invention. It is sectional drawing for demonstrating the relationship between the etching shape of a board | substrate, and heating temperature. It is the graph which showed the relationship between the temperature of a board | substrate, and heating time.

Hereinafter, specific embodiments of the present invention will be described with reference to the accompanying drawings. In the present embodiment, the plasma etching of carbonization silicon substrate K, will be described as an example a case of implementing the etching apparatus 1 shown in FIG. Further, this silicon carbide substrate K has, for example, a 4H—SiC crystal structure, and on its surface, for example, a silicon dioxide film is formed as an etching mask. A mask pattern having a predetermined shape is formed.

  First, the etching apparatus 1 will be described. As shown in FIG. 1, the etching apparatus 1 includes a processing chamber 11 having a closed space, a base 15 that is disposed in the processing chamber 11 so as to be movable up and down, and on which the silicon carbide substrate K is placed, Elevating cylinder 18 that raises and lowers table 15, exhaust device 20 that reduces the pressure in processing chamber 11, gas supply device 25 that supplies etching gas and inert gas into processing chamber 11, and supply into processing chamber 11 A plasma generation device 30 that converts the etching gas and the inert gas into plasma and a high-frequency power source 35 that supplies high-frequency power to the base 15 are provided.

  The processing chamber 11 includes a lower chamber 12 and an upper chamber 13 having internal spaces communicating with each other. The upper chamber 13 is formed smaller than the lower chamber 12. The base 15 includes an upper member 16 on which the silicon carbide substrate K is placed and a lower member 17 to which the elevating cylinder 18 is connected, and is disposed in the lower chamber 12.

  The exhaust device 20 includes an exhaust pipe 21 connected to the side surface of the lower chamber 12, and exhausts the gas in the processing chamber 11 through the exhaust pipe 21 to bring the inside of the processing chamber 11 to a predetermined pressure.

The gas supply apparatus 25, as the etching gas, for example, supplied SF ₆ gas or an etching gas supply unit 26 for supplying a mixed gas of SF ₆ gas and O ₂ gas, for example, an inert gas such as He gas An inert gas supply unit 27, and a supply pipe 28 having one end connected to the upper surface of the upper chamber 13 and the other end branched and connected to the etching gas supply unit 26 and the inert gas supply unit 27, respectively. An etching gas is supplied from the gas supply unit 26 into the processing chamber 11 through the supply pipe 28, and an inert gas is supplied from the inert gas supply unit 27 into the processing chamber 11 through the supply pipe 28.

  The plasma generating apparatus 30 includes a plurality of annular coils 31 that are arranged in the vertical direction on the outer peripheral portion of the upper chamber 13, and a high-frequency power source 32 that supplies high-frequency power to each coil 31. By supplying high frequency power to the coil 31, the etching gas and inert gas supplied into the upper chamber 13 are turned into plasma. The high-frequency power source 35 supplies high-frequency power to the base 15 to generate a potential difference (bias potential) between the base 15 and the plasma, and ions generated by converting the etching gas and the inert gas into plasma. Is incident on the silicon carbide substrate K.

  Next, a method for plasma etching silicon carbide substrate K using etching apparatus 1 configured as described above will be described.

  First, the silicon carbide substrate K is carried into the etching apparatus 1 and placed on the base 15. The temperature of the silicon carbide substrate K is 200 ° C. to 400 ° C. (etching temperature). The silicon carbide substrate K is heated until it reaches. At this time, in the etching apparatus 1, the inert gas is supplied from the inert gas supply unit 27 into the processing chamber 11, the inside of the processing chamber 11 is brought to a predetermined pressure by the exhaust device 20, and the coils 31 and 35 are High frequency power is respectively supplied to the base 15. The inert gas supplied into the processing chamber 11 is converted into plasma, and ions generated by the plasma are incident on and collide with the silicon carbide substrate K by a bias potential. Thereby, silicon carbide substrate K is heated to rise in temperature, and eventually reaches equilibrium at the etching processing temperature.

  Whether or not the temperature of silicon carbide substrate K has reached the etching processing temperature can be determined by, for example, the heating time or temperature measurement of silicon carbide substrate K. In addition, since the silicon dioxide film as an etching mask has higher heat resistance than a resist, even if the silicon carbide substrate K is heated to 200 ° C. to 400 ° C., it is softened and the shape accuracy of the mask pattern is reduced. Absent.

  Then, when the temperature of silicon carbide substrate K reaches equilibrium with the etching temperature, silicon carbide substrate K is etched using silicon dioxide film as a mask. At this time, in the etching apparatus 1, the etching gas is supplied from the etching gas supply unit 26 into the processing chamber 11, the inside of the processing chamber 11 is brought to a predetermined pressure by the exhaust device 20, and the coil 31 and the base are supplied by the high frequency power sources 32 and 35. 15 is supplied with high frequency power. The etching gas supplied into the processing chamber 11 is turned into plasma, and the silicon carbide substrate K is etched by radicals and ions generated by the plasma. In the silicon carbide substrate K, holes and grooves corresponding to the mask pattern of the silicon dioxide film are formed.

  Even when etching silicon carbide substrate K, silicon carbide substrate K is heated by ions incident and colliding with a bias potential, so that the temperature of silicon carbide substrate K is maintained constant (the etching temperature). The

  Incidentally, as described above, in this example, the silicon carbide substrate K is etched by heating to 200 ° C. to 400 ° C. This is because, when the silicon carbide substrate K having a strong bond between atoms is etched as a result of the study by the present inventors, the silicon carbide substrate K is heated to a temperature of 200 ° C. to 400 ° C. This is because it has been found preferable.

  That is, according to the study by the present inventors, when the heating temperature of the silicon carbide substrate K is low, the hole H formed by etching or the groove H on the side wall of the bottom surface of the groove H is formed as shown in FIG. 'Is further formed, and an accurate etching shape cannot be obtained. However, when the heating temperature of the silicon carbide substrate K is gradually increased, as shown in FIG. 2B, the size of the groove H ′ to be formed gradually decreases, and finally, FIG. As shown in (c), the groove H ′ is not formed.

  Further, when the heating temperature of the silicon carbide substrate K is gradually increased from the heating temperature at which the groove H ′ is no longer formed, the etching easily proceeds isotropically, and FIG. 2 (d) and FIG. 2 (e). As shown in FIG. 5, the etching is performed up to the side wall of the hole H or the groove H. Silicon (Si) and carbon (C) composing the silicon carbide substrate K do not react with radicals and ions generated by plasmatization of the etching gas until the bond between the two is broken. The higher the temperature of the substrate K, the more easily the bond between silicon and carbon is broken, and the radicals and ions generated by the etching gas becoming plasma easily react with silicon and carbon, so that the etching by this reaction proceeds efficiently. . Therefore, as the heating temperature of silicon carbide substrate K increases, etching of silicon carbide substrate K proceeds isotropically, and the sidewalls of holes H and grooves H are more easily etched.

  Then, based on such points, the relationship between the heating temperature of silicon carbide substrate K and the etching shape was examined. The heating temperature of silicon carbide substrate K was 200 ° C. to 400 ° C. (more preferably, 300 ° C. to 400 ° C. ), When the etching is performed, the groove H ′ is not formed at all on the bottom surface of the hole H or the groove H, or even if it is formed, it is very small. Also, it was confirmed that the film was not etched at all or very little if etched. Therefore, if silicon carbide substrate K is heated to 200 ° C. to 400 ° C. (more preferably, 300 ° C. to 400 ° C.), silicon carbide substrate K can be etched with high accuracy.

  Thus, according to the plasma etching method of this example, when the silicon carbide substrate K is plasma-etched, the silicon carbide substrate K is heated to 200 ° C. to 400 ° C. It can be etched.

Further, in this example, the etching process is started after the temperature of the silicon carbide substrate K reaches the etching process temperature. However, as shown in FIG. Since it takes a certain time to raise the temperature from the temperature T ₀ before heating to the etching processing temperature T ₁ (200 ° C. ≦ T ₁ ≦ 400 ° C.), before the temperature of the silicon carbide substrate K reaches the etching processing temperature T _1. When starting the etching of the silicon carbide substrate K from, between the start of etching until the temperature of the silicon carbide substrate K reaches the etching temperature T ₁ of the etching condition is changed by a temperature change of the silicon carbide substrate K, The silicon carbide substrate K cannot be etched with high accuracy (for example, FIG. 2A formed by etching in a time zone when the temperature of the silicon carbide substrate K is low) Figure 2 (b) groove H 'as shown in the temperature completely disappear not) or a problem that the by etching from becoming the etching temperature T ₁ of the silicon carbide substrate K, the etching rate is uneven This is because the problem of

Therefore, as in the present embodiment, after the temperature of the silicon carbide substrate K becomes etching temperature T _1, when to start the etching process to prevent the temperature change of the silicon carbide substrate K after etching treatment initiation Thus, the etching process can be stabilized, the silicon carbide substrate K can be etched with high accuracy, and the etching rate can be prevented from becoming uneven.

  In addition, since the silicon carbide substrate K is heated by causing the ions generated by the plasma conversion of the inert gas to enter and collide with the silicon carbide substrate K, the temperature of the silicon carbide substrate K is increased while preventing etching due to ion incidence. Can be made. Further, without providing a heating mechanism for heating silicon carbide substrate K in processing chamber 11, silicon carbide substrate K can be heated simply by generating plasma of an inert gas.

Incidentally, when the silicon carbide substrate K on which the silicon dioxide film as a mask is formed by applying the plasma etching method of this example is etched, as shown in FIG. 2A and FIG. 'Is not formed, and the side walls are not etched as shown in FIGS. 2 (d) and 2 (e), and the etching is performed with high accuracy as shown in FIG. 2 (c). A shape was obtained. The processing conditions for heating the silicon carbide substrate K by converting the inert gas into plasma and setting the temperature of the silicon carbide substrate K to an etching temperature of 200 ° C. to 400 ° C. are He gas as an inert gas. The supply flow rate is 50 sccm, the pressure in the processing chamber 11 is 3 Pa, the high frequency power supplied to the coil 31 is 2.5 kW, the high frequency power supplied to the base 15 is 700 W, and the temperature of the silicon carbide substrate K is etched. After reaching the processing temperature, the processing conditions for etching this silicon carbide substrate K are as follows: the supply flow rate of SF ₆ gas, which is an etching gas, is 50 sccm; the pressure in the processing chamber 11 is 3 Pa; The power was 2.5 kW, and the high frequency power supplied to the base 15 was 700 W. At this time, the etching temperature of silicon carbide substrate K was about 400 ° C.

  As mentioned above, although one Embodiment of this invention was described, the specific aspect which this invention can take is not limited to this at all.

  In the above example, the temperature of the silicon carbide substrate K is raised by making ions generated by the plasma conversion of the inert gas impinge on and collide with the silicon carbide substrate K. K may be heated. For example, a heater may be embedded in the base 15 and the silicon carbide substrate K may be heated by this heater, or the silicon carbide substrate K may be heated by both ion incidence and the heater. When the temperature of silicon carbide substrate K rises to a temperature exceeding 400 ° C. due to heating, cooling of silicon carbide substrate K is combined with the temperature of silicon carbide substrate K in the range of 200 ° C. to 400 ° C. It is good to control.

Further, as the etching target substrate K, it is taken as an example a silicon carbide substrate having a crystal structure of 4H-SiC, etched substrate K is not good even silicon carbide substrate having a crystal structure other than 4H-SiC . In addition to the silicon dioxide film described above, for example, a metal mask such as a nickel film can be employed as the etching mask for the silicon carbide substrate K.

  Furthermore, in the above example, the plasma etching method according to the present invention is performed using the etching apparatus 1. However, an etching apparatus having another structure may be used for performing the plasma etching method.

1 etching apparatus 11 processing chamber 15 base plate 20 exhaust apparatus 25 gas supply apparatus 26 etching gas supply unit 27 inert gas supply unit 30 plasma generating apparatus 31 coil 32 high-frequency power source 35 a high frequency power source K silicon carbide board

Claims (4)

A processing chamber having a closed space; a base on which a silicon carbide substrate is placed; an exhaust device that decompresses the inside of the processing chamber; a gas supply device that supplies gas into the processing chamber; and a coil ; Using an etching apparatus provided with a plasma generating apparatus that supplies high-frequency power to the coil to convert the gas supplied into the processing chamber into plasma, and a high-frequency power source that supplies high-frequency power to the base, A method of plasma etching a silicon carbide substrate on a base,
After placing the silicon carbide substrate on the base,
SF ₆ gas is supplied by the gas supply device into the processing chamber decompressed by the exhaust device, and the supplied SF ₆ gas is converted into plasma by the plasma generation device, and biased to the base by the high frequency power source. Etching the silicon carbide substrate by applying a potential;
A plasma etching method, wherein the silicon carbide substrate is etched while being heated to 200 ° C to 400 ° C. The plasma etching method according to claim 1, wherein the silicon carbide substrate is preheated to a temperature of 200 ° C to 400 ° C, and then the silicon carbide substrate is etched while maintaining the temperature . When the silicon carbide substrate is heated in advance , an inert gas is supplied into the processing chamber by the gas supply device, the supplied inert gas is converted into plasma by the plasma generation device, and the base is supplied by the high-frequency power source. giving a bias potential to the base, the plasma of claim 2, wherein said the generated ions to be incident on the silicon carbide material substrate by plasma of an inert gas, characterized in that so as to heat the silicon carbide substrate Etching method. The plasma etching method according to any one of claims 1 to 3, wherein a heating temperature of the silicon carbide substrate is set in a range of 300C to 400C.