JP2011009519A - Optical semiconductor device and method for manufacturing the optical semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optical semiconductor device and a method for manufacturing the optical semiconductor device capable of enhancing productivity.SOLUTION: The method for manufacturing an optical semiconductor device 100 includes the steps of: forming a light-reflecting layer 30 formed with a plurality of through-holes 30a, by transfer molding by use of a thermosetting resin composition on a wiring member 10 to obtain a formed body 70, formed with a plurality of recess parts 32 plugging one of aperture parts of the through-hole 30a by a wiring member 10; arranging optical semiconductor elements 20 inside the recess section 32, respectively; supplying the recess section 32, arranged with the semiconductor element 20 with a sealing resin so as to coat a surface 30b of the light-reflecting layer 30; arranging a lens 50 covering the recess section 32, in a state of being separates from the surface 30b of the light-reflecting layer 30 by intervention of the sealing resin to then harden the sealing resin; and dividing the formed body 70 for each recess section 32 and obtaining a plurality of optical semiconductor devices 100.

Description

  The present invention relates to an optical semiconductor device and a method for manufacturing the optical semiconductor device.

  Light emitting diodes (LEDs), which are optical semiconductor elements, are attracting attention as inexpensive and long-life elements, and are used in optical semiconductor devices such as various indicators, light sources, flat display devices, and liquid crystal display backlights. Widely used. As a conventional optical semiconductor device, there is a device in which an LED element arranged inside a case material is covered with a cover, and a cavity portion between the LED element and the cover is filled with air ( For example, see Patent Document 1 below). In addition, as another optical semiconductor device, the LED element arranged inside the case material is covered with a cover, and a cavity portion between the LED element and the cover is filled with silicone resin, There is one in which a silicone resin is injected by inserting a needle into the cavity (see, for example, Patent Document 2 below). Furthermore, there is an optical semiconductor device in which a protective material is provided on a housing (case material) via a cushioning material (see, for example, Patent Document 3 below).

US Pat. No. 6,204,523 JP 2005-183965 A JP 2008-172140 A

  However, in the optical semiconductor device of Patent Document 2, the needle needs to penetrate the cover for injecting the silicone resin, and the material that can be used for the cover is limited, and the cover may be deformed. There are problems such as difficulty in removing bubbles remaining in the silicone resin in the cavity and leakage of the silicone resin from the portion of the cover where the needle is inserted.

  Further, in any of the optical semiconductor devices of Patent Documents 1 to 3, since the optical semiconductor devices are manufactured one by one, a lot of labor and time are required, which is not efficient and has a problem in productivity. In particular, when manufacturing an optical semiconductor device in which a protective material is provided on a housing via a cushioning material as in Patent Document 3, a process of loosely providing a protective material on each housing tends to cause a reduction in productivity.

  SUMMARY An advantage of some aspects of the invention is that it provides an optical semiconductor device and a method for manufacturing the optical semiconductor device capable of improving productivity.

  In the method for manufacturing an optical semiconductor device according to the present invention, a light reflecting layer in which a plurality of through holes are formed by transfer molding using a thermosetting resin composition is formed on a wiring member, and one opening of the through hole is formed. A step of obtaining a molded body in which a plurality of recesses formed by closing with wiring members are formed; a step of arranging optical semiconductor elements in the recesses; and a recess in which the semiconductor elements are arranged so as to cover the surface of the light reflecting layer A step of supplying a sealing resin, a step of disposing a lens covering the recess in a state of being spaced from the surface of the light reflecting layer by interposing the sealing resin, and a step of curing the sealing resin; And a step of obtaining a plurality of optical semiconductor devices by dividing each recess.

  In the method for manufacturing an optical semiconductor device according to the present invention, an optical semiconductor element is disposed, an optical semiconductor element is sealed, and a lens is disposed using a molded body having a plurality of recesses, and the molded body is divided. A plurality of optical semiconductor devices are obtained at a time. Therefore, the molded body is well divided, and the productivity can be significantly improved as compared with the conventional manufacturing method in which the optical semiconductor devices are manufactured one by one.

  The thermosetting resin composition includes (A) an epoxy resin, (B) a curing agent, (C) a curing accelerator, (D) an inorganic filler, and (E) a white pigment, and includes a thermosetting resin. The light reflectance of the cured product of the composition at a wavelength of 420 to 800 nm is preferably 80% or more. In this case, the productivity of the optical semiconductor device can be further improved.

  Further, (D) the inorganic filler is preferably at least one selected from the group consisting of silica, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, magnesium hydroxide, barium sulfate, magnesium carbonate and barium carbonate. . In this case, the heat resistance and flame retardancy of the optical semiconductor device can be highly compatible.

  Moreover, it is preferable that (E) white pigment is an inorganic hollow particle. In this case, the light emission efficiency of the optical semiconductor device can be increased.

  The (E) white pigment is preferably titanium oxide. In this case, the light emission efficiency of the optical semiconductor device can be increased.

  Moreover, it is preferable that the center particle diameter of (E) white pigment is 0.1-50 micrometers. In this case, the flame retardancy and fluidity of the thermosetting resin composition can be improved. The central particle size is a particle size value when the integrated value is 50% in the volume-based particle size distribution curve. For example, a laser particle size distribution meter (for example, trade name: LS 13 320 manufactured by Beckman Coulter) Can be measured.

  Moreover, it is preferable that the total amount of (D) inorganic filler and (E) white pigment is 10-85 volume% with respect to the whole thermosetting resin composition. In this case, the optical semiconductor device can be reduced in size and thickness, and the light emission efficiency of the optical semiconductor device can be increased.

  Moreover, it is preferable that the elasticity modulus of sealing resin is 0.001-10 MPa. In this case, the heat resistance, light resistance, and stress relaxation effect of the sealing resin can be improved.

  Moreover, it is preferable that a lens contains at least 1 sort (s) chosen from the group which consists of an acrylic resin, a urethane resin, a silicone resin, a fluororesin, an epoxy resin, and an alicyclic olefin resin.

  An optical semiconductor device according to the present invention is manufactured using the above-described optical semiconductor device manufacturing method.

  Since the optical semiconductor device according to the present invention is manufactured using the method for manufacturing an optical semiconductor device, productivity can be improved.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the optical semiconductor device which can improve productivity, and an optical semiconductor device can be provided.

1 is a perspective view showing an embodiment of an optical semiconductor device according to the present invention. (A) is the II-II sectional view taken on the line of FIG. 1, (b) is sectional drawing which expands and shows the principal part of (a). It is sectional drawing which shows one Embodiment of the manufacturing method of the optical semiconductor device which concerns on this invention. FIG. 4 is a cross-sectional view showing the procedure of the subsequent step of FIG. 3. It is a perspective view which shows the molded object after the process of FIG. FIG. 5 is a cross-sectional view showing the procedure of the subsequent step of FIG. 4.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of an optical semiconductor device and a method for manufacturing an optical semiconductor device according to the present invention will be described in detail with reference to the drawings.

<Optical semiconductor device>
FIG. 1 is a perspective view showing an embodiment of an optical semiconductor device according to the present invention. However, in FIG. 1, the sealing body and the lens are omitted. 2A is a cross-sectional view taken along the line II-II in FIG. 1, and FIG. 2B is a cross-sectional view showing an enlarged main part of FIG.

  As shown in FIGS. 1 and 2, the optical semiconductor device 100 includes a wiring member 10, an optical semiconductor element 20, a light reflection layer 30, a sealing body 40, and a lens 50. The optical semiconductor device 100 is generally classified into a surface mount type (SMD type).

  As the wiring member 10, it is preferable to use a lead frame formed by a known method. For example, a lead frame such as a 42 alloy lead frame or a copper lead frame is used. The wiring member 10 has a rectangular shape, for example, and includes conductor members 14a and 14b.

  In addition, as the wiring member 10, you may use the wiring board which has a base material and several conductor members (connection terminal) arrange | positioned on a base material. In this case, as the substrate, a substrate such as a substrate used for a copper clad laminate is used, and for example, a resin laminate such as an epoxy resin laminate may be used.

  The conductor members 14a and 14b are made of metal. The conductor member 14 a is disposed from one end to the other end in the longitudinal direction of the wiring member 10 at the approximate center in the short direction of the wiring member 10. Three conductor members 14 b are arranged at each of both ends in the short direction of the wiring member 10, and each conductor member 14 b is elongated in the longitudinal direction of the wiring member 10. The respective conductor members 14b are arranged apart from each other and are arranged so as to be symmetric with respect to the conductor member 14a, apart from the conductor member 14a.

  A white resin layer 16 is disposed between the conductor member 14a and the conductor member 14b. The white resin layer 16 is formed of the same resin as the light reflection layer 30 described later.

  Three optical semiconductor elements 20 are mounted on the conductor member 14a via, for example, a die bond material (not shown), and are arranged in the longitudinal direction of the wiring member 10 apart from each other. The surface of each optical semiconductor element 20 is electrically connected by a bonding wire 18 to each of the conductor members 14b located symmetrically with the conductor member 14a interposed therebetween. The optical semiconductor element 20 emits light when power is supplied through the bonding wire 18, and the light is emitted from the lens 50 through the sealing body 40. As the optical semiconductor element 20, elements such as a GaN blue element, a green element, a GaP green element, an orange element, and a GaAs red element can be used without particular limitation.

  The light reflecting layer 30 is a substantially rectangular parallelepiped member having a through-hole 30 a formed therein by four side walls disposed on the wiring member 10 along the outer edge portion of the wiring member 10. The through hole 30a is formed so that the opening becomes smaller from the front surface 30b to the back surface (surface on the wiring member 10 side) of the light reflecting layer 30 when the four side walls of the light reflecting layer 30 are inclined. The light reflecting layer 30 constitutes an optical semiconductor element mounting substrate together with the wiring member 10, and a recess (cavity portion) 32 is formed by closing the opening on the back side of the through hole 30 a by the wiring member 10. Has been. When the inside of the recess 32 is viewed from the surface 30 b side of the light reflecting layer 30, the three optical semiconductor elements 20 are exposed at the bottom of the recess 32. That is, the bottom of the recess 32 corresponds to the optical semiconductor element mounting region.

  The sealing body 40 is disposed in the recess 32 of the light reflecting layer 30 to seal the optical semiconductor element 20, and the surface 30 b of the light reflecting layer 30 is disposed on the first portion 40 a. And a second portion 40b covering the. The second portion 40b is integrated with the first portion 40a. The second portion 40b forms a resin layer having a thickness of several μm to several hundred μm. For example, the thickness of the second portion is preferably 5 to 500 μm, more preferably 10 to 300 μm, and more preferably 20 to 200 μm. Is more preferable. If the thickness is less than 5 μm, the stress relaxation effect tends to be small, and if it exceeds 500 μm, the dicing property during the production of the optical semiconductor device 100 tends to be reduced.

  The sealing body 40 is formed by supplying a light-transmitting sealing resin (translucent sealing resin) to the inside of the recess 32 and the surface 30 b of the light reflecting layer 30. Examples of the sealing resin include an epoxy resin, an acrylic resin, a urethane resin, a silicone resin, and modified resins thereof. Among them, the coloring and deterioration are suppressed, and the bonding wire 18 is disconnected due to thermal stress due to the stress relaxation effect. Since the reliability can be further improved since it is suppressed, a gel-like or rubber-like silicone resin is preferred, and a gel-like or rubber-like dimethyl silicone resin is more preferred. Examples of the dimethyl silicone resin include KJR-9022X-5, KER-2600 (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.), OE-6351, JCR6115, JCR6110 (trade name, manufactured by Toray Dow Corning Co., Ltd.), XE-14. -C2042, IVS4012, IVS5022 (a product name made by Momentive Performance Materials, Inc.), etc. can be used. A phosphor may be added to the sealing resin as necessary. The elastic modulus at room temperature (25 ° C.) of the sealing resin is preferably 0.001 to 10 MPa from the viewpoint of improving heat resistance, light resistance, and stress relaxation effect. In addition, the elasticity modulus of sealing resin can be measured using the penetration (JIS K 2220 1/4 cone) and rubber hardness (JIS type A).

  The lens 50 is disposed on the second portion 40 b of the sealing body 40 and covers the recess 32. As the lens 50, for example, a convex lens, a concave lens, a cylindrical lens, a Fresnel lens shape, or the like can be used. The lens 50 and the light reflecting layer 30 are separated from each other with the second portion 40b of the sealing body 40 interposed therebetween.

  The material of the lens 50 is not particularly limited as long as it is hard, has no tackiness, has an elastic modulus (eg, 100 to 2000 MPa) that does not deform with respect to external stress, and is transparent in the visible light region. Acrylic resin, urethane resin, silicone resin, fluororesin, epoxy resin, and alicyclic olefin resin are preferred. Examples of the lens 50 include “TOPAS5013LS-01” (trade name, manufactured by Polyplastics Co., Ltd.), SR7010 (trade name, manufactured by Toray Dow Corning Co., Ltd.), LPS-L500 (manufactured by Shin-Etsu Chemical Co., Ltd., product). Name), NEOFRON CTFE (trade name, manufactured by Daikin Industries, Ltd.), ZEONEX 480 (trade name, manufactured by Nippon Zeon Co., Ltd.), and the like can be used.

  Next, the thermosetting resin composition (mold material) for forming the light reflecting layer 30 will be described in detail. The thermosetting resin composition preferably contains (A) an epoxy resin, (B) a curing agent, (C) a curing accelerator, (D) an inorganic filler, and (E) a white pigment.

(A) Epoxy resin As an epoxy resin, what is generally used as an epoxy resin molding material for electronic component sealing can be used. The epoxy resin is not particularly limited. For example, a phenol novolac type epoxy resin, an orthocresol novolac type epoxy resin and other phenols and aldehyde novolak resins epoxidized, bisphenol A, bisphenol F, bisphenol S, etc. , Glycidylamine type epoxy resins obtained by reaction of polyamines such as diglycidyl ethers such as alkyl-substituted biphenols, diaminodiphenylmethane, isocyanuric acid and epichlorohydrin, linear aliphatics obtained by oxidizing olefinic bonds with peracids such as peracetic acid An epoxy resin, an alicyclic epoxy resin, etc. can be mentioned. These epoxy resins may be used independently and may use 2 or more types together. Of these epoxy resins, those having relatively little color are preferably used. For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, and triglycidyl isocyanurate are preferable.

(B) Curing agent As the curing agent, any curing agent that can react with an epoxy resin can be used without particular limitation. Examples of the curing agent include acid anhydride curing agents, isocyanuric acid derivatives, phenolic curing agents, and the like. Examples of the acid anhydride curing agent include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methyl nadic anhydride, nadic anhydride, glutaric anhydride. Acid, dimethyl glutaric anhydride, diethyl glutaric anhydride, succinic anhydride, methyl hexahydrophthalic anhydride, methyl tetrahydrophthalic anhydride, norbornene dicarboxylic anhydride, methyl norbornene dicarboxylic anhydride, norbornane dicarboxylic anhydride, methyl norbornane Dicanrubonic anhydride may be mentioned. Isocyanuric acid derivatives include 1,3,5-tris (1-carboxymethyl) isocyanurate, 1,3,5-tris (2-carboxyethyl) isocyanurate, 1,3,5-tris (3-carboxypropyl) ) Isocyanurate, 1,3-bis (2-carboxyethyl) isocyanurate and the like. Examples of phenolic curing agents include phenol novolac resins, cresol novolac resins, dicyclopentadiene modified phenol resins, paraxylene modified phenol resins, condensates of phenols with benzaldehyde, naphthyl aldehyde, etc., triphenolmethane compounds, polyfunctional phenols. Examples thereof include resins. These curing agents may be used alone or in combination of two or more.

  Among these curing agents, phthalic anhydride, trimellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, glutaric anhydride, dimethylglutaric anhydride, anhydrous Diethyl glutaric acid, 1,3,5-tris (3-carboxypropyl) isocyanurate is preferably used. The curing agent preferably has a molecular weight of about 100 to 400, and is preferably colorless or light yellow.

  50-200 mass parts is preferable with respect to 100 mass parts of epoxy resins, and, as for content of a hardening | curing agent, 100-150 mass parts is more preferable. If the content of the curing agent is less than 50 parts by mass, the curing reaction of the epoxy resin tends not to proceed sufficiently, and if it exceeds 200 parts by mass, the resulting molded product tends to discolor.

(C) Curing accelerator The curing accelerator is not particularly limited. For example, 1,8-diaza-bicyclo (5,4,0) undecene-7, triethylenediamine, tri-2,4,6. -Tertiary amines such as dimethylaminomethylphenol, imidazoles such as 2-ethyl-4methylimidazole and 2-methylimidazole, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetra-n-butylphosphonium-o, o -Phosphorus compounds such as diethyl phosphorodithioate, tetra-n-butylphosphonium-tetrafluoroborate, tetra-n-butylphosphonium-tetraphenylborate, quaternary ammonium salts, organometallic salts, and derivatives thereof . These may be used alone or in combination of two or more. Among these curing accelerators, it is preferable to use tertiary amines, imidazoles, and phosphorus compounds.

  It is preferable that content of a hardening accelerator is 0.01-10.0 mass parts with respect to 100 mass parts of epoxy resins, and 0.1-8.0 mass parts is more preferable. If the content of the curing accelerator is less than 0.01 parts by mass, a sufficient curing acceleration effect tends not to be obtained, and if it exceeds 10.0 parts by mass, the resulting molded product tends to discolor.

(D) Inorganic filler The inorganic filler is at least one selected from the group consisting of silica, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, magnesium hydroxide, barium sulfate, magnesium carbonate and barium carbonate. In view of improving reliability, silica having low thermal expansion is more preferable.

  As the inorganic filler, aluminum hydroxide and magnesium hydroxide are preferable from the viewpoint of flame retardancy. Moreover, since aluminum hydroxide and magnesium hydroxide are white, they are preferable also from a viewpoint with little influence on a reflectance. Further, from the viewpoint of moisture resistance reliability, the content of ionic compounds in aluminum hydroxide or magnesium hydroxide is preferably small. As for content of an ionic compound (for example, Na compound), 0.2 mass% or less is preferable with respect to the whole thermosetting resin composition.

  100-2000 mass parts is preferable with respect to 100 mass parts of epoxy resins, and, as for content of an inorganic filler, 500-1500 mass parts is more preferable. If the content of the inorganic filler is less than 100 parts by mass, the strength of the material tends to decrease, and if it exceeds 2000 parts by mass, the fluidity and curability tend to be adversely affected.

  The center particle size of the inorganic filler is preferably 0.1 to 50 μm. If the center particle size is less than 0.1 μm, the particles tend to aggregate and the dispersibility tends to deteriorate, and if it exceeds 50 μm, the moldability tends to decrease.

(E) White pigment As the white pigment, titanium oxide (rutile type) is preferable from the viewpoint of improving light reflectivity. As the white pigment, inorganic hollow particles are also preferable. Examples of the inorganic hollow particles include hollow particles such as sodium silicate glass, aluminum silicate glass, sodium borosilicate glass, and shirasu.

  The center particle diameter of the white pigment is preferably 0.1 to 50 μm. If the center particle size is less than 0.1 μm, the particles tend to aggregate and the dispersibility tends to deteriorate, and if it exceeds 50 μm, the reflection characteristics tend not to be sufficiently obtained.

  100-4500 mass parts is preferable with respect to 100 mass parts of epoxy resins, and, as for content of a white pigment, 200-2000 mass parts is more preferable. When the content of the white pigment is less than 100 parts by mass, the reflectance tends to decrease, and when it exceeds 4500 parts by mass, the moldability tends to deteriorate.

  The filling amount of the white pigment is preferably 10 to 85% by volume, more preferably 50 to 85% by volume, and still more preferably 70 to 85% by volume with respect to the entire thermosetting resin composition. When the filling amount is less than 10% by volume, the light reflection property tends to be lowered, and when it exceeds 85% by volume, the moldability tends to be deteriorated.

(F) Coupling agent For the purpose of improving the dispersibility of the white pigment, the thermosetting resin composition may optionally contain a coupling agent. As coupling agents, there are silane coupling agents and titanate coupling agents, but from the viewpoint of suppressing coloring, epoxy silanes are generally superior, and a specific example is 3-glycidoxypropyltrimethoxysilane. 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and the like.

  0.1-5 mass parts is preferable with respect to 100 mass parts of epoxy resins, and, as for content of a coupling agent, 1-3 mass parts is more preferable. When the content of the coupling agent is less than 0.1 parts by mass, the fluidity tends to decrease, and when it exceeds 5 parts by mass, the curability tends to decrease or the releasability tends to deteriorate.

  In addition, an antioxidant, a light stabilizer, an ultraviolet absorber, a release agent, an ion scavenger, a flexible agent, and the like may be added as additives to the thermosetting resin composition. As the flexibilizer, acrylic resin, urethane resin, or the like is suitable.

  The light reflectance at a wavelength of 420 to 800 nm with a cured product thickness of 1 mm of the thermosetting resin composition is preferably 80% or more, more preferably 85% or more, and still more preferably 90% or more. If the light reflectance is less than 80%, the light emission efficiency of the optical semiconductor device tends to decrease.

  In the optical semiconductor device 100 according to the present embodiment, since the optical semiconductor element 20 disposed in the recess 32 has a simple structure in which the optical semiconductor element 20 is sealed by the sealing body 40, the molding in which the plurality of recesses 32 are formed. A method of manufacturing a plurality of optical semiconductor devices at a time by dividing a molded body using a body can be suitably applied. Therefore, an optical semiconductor device can be obtained efficiently and productivity can be significantly improved as compared with a conventional manufacturing method in which a molded body is well divided and optical semiconductor devices are manufactured one by one.

  By the way, in the optical semiconductor devices of Patent Documents 1 and 2, the case material and the cover functioning as a lens are in contact and fixed. Therefore, in a temperature cycle test or the like, since the generated stress is not relaxed and is applied to the cover or the case material, there is a problem that peeling or cracking occurs. On the other hand, in the optical semiconductor device 100 according to the present embodiment, the light reflecting layer 30 and the lens 50 are separated from each other at a predetermined interval (preferably 5 to 500 μm) with the second portion 40b of the sealing body 40 interposed therebetween. is doing. Thereby, in the temperature cycle test and the reflow test, the light reflecting layer 30 and the lens 50 can move on a microscopic scale so as to relieve the thermal stress, and the lens 50 and the light reflecting layer 30 are peeled or cracked. Occurrence can be suppressed, and the reliability of the optical semiconductor device 100 can be improved.

  Further, in the optical semiconductor device 100, it is possible to improve the luminance of the optical semiconductor device 100 by providing the lens 50 that covers the concave portion 32, and further, adhesion of foreign matters to the sealing body 40 and the sealing body. 40 can be suppressed, and the handling property of the optical semiconductor device 100 can be improved.

  However, the optical semiconductor device of Patent Document 1 has a problem that the light extraction efficiency is lowered because the refractive index at the interface between the air in the cavity and the LED element or the cover is greatly different. On the other hand, in this invention, since the sealing body 40 is arrange | positioned between the optical semiconductor element 20 and the lens 50, it can suppress that the interface of air and the optical semiconductor element 20 or the lens 50 arises. In this case, the light extraction efficiency can be further improved by reducing the difference in refractive index between the sealing body 40 and the optical semiconductor element 20 or the lens 50.

  Furthermore, since the optical semiconductor device 100 is excellent in heat resistance, light resistance, temperature cycle resistance, and reflow resistance, an optical semiconductor device suitable for a high-intensity LED package can be provided.

<Method for Manufacturing Optical Semiconductor Device>
Next, a method for manufacturing the optical semiconductor device 100 according to the present embodiment will be described with reference to FIGS. FIG. 3 is a cross-sectional view showing an embodiment of a method for manufacturing an optical semiconductor device according to the present invention. FIG. 4 is a cross-sectional view showing the procedure of the subsequent process of FIG. FIG. 5 is a perspective view showing the molded body after the step of FIG. FIG. 6 is a cross-sectional view showing the procedure of the subsequent step of FIG.

  First, after forming a circuit using a known method such as a method of photo-etching a copper foil, Ni / Ag plating is applied to the surface of the circuit to form conductor members 14a and 14b, and FIG. As shown in FIG.

  Next, a mold 60 having a concave portion in which a plurality of light reflecting layers 30 having concave portions 32 are arranged in a matrix (for example, 10 vertical × 16 horizontal) is prepared, as shown in FIG. Then, the mold 60 is disposed on the wiring member 10. Next, a thermosetting resin composition is injected from a resin injection port (not shown) of the mold 60 to form the light reflecting layer 30 on the wiring member 10. The light reflecting layer 30 is formed by transfer molding, and a MAP (Mold Array Package) method can be used. After injecting the thermosetting resin composition, the thermosetting resin composition is cured by maintaining the mold temperature at 180 ° C. for 90 seconds, for example. Note that it is preferable to reduce the pressure in the mold 60 during transfer molding because the resin filling property is improved. After the light reflecting layer 30 is formed, the thermosetting resin composition may be after-cured by heating at a temperature of 120 to 180 ° C. for 1 to 3 hours, for example. As a result, as shown in FIG. 4A, a molded body 70 in which a plurality of light reflecting layers 30 each having a recess 32 is formed is formed, and a white resin layer 16 is formed between the conductor members 14a and 14b.

  Subsequently, for example, a die bond material is applied onto the conductor member 14a in the recess 32, and the three optical semiconductor elements 20 are arranged side by side on the die bond material. Then, as shown in FIG. 4B, the surface of each optical semiconductor element 20 is electrically connected to the conductor member 14 b using a bonding wire 18. As a mounting method, not only a wire bond method but also a flip chip method may be used. As described above, as shown in FIGS. 5A and 5B, the three optical semiconductor elements 20 are mounted on the bottom of each recess 32 in the molded body 70.

  Next, the sealing body 40 is formed by potting as follows. First, as shown in FIG. 6A, a sealing resin is supplied into each recess 32 to form a first portion 40 a that seals the optical semiconductor element 20. After the recess 32 is filled with the sealing resin, the sealing resin is continuously supplied to form the second portion 40b that is disposed on the first portion 40a and covers the surface 30b of the light reflecting layer 30. . Thus, the sealing body 40 is obtained.

  Subsequently, as shown in FIG. 6B, the lens 50 is disposed at a position on each recess 32 on the second portion 40b of the sealing body 40, and the lens 50 is adhered to the sealing resin. Thereafter, the sealing resin is cured by heating and pressing (for example, 150 ° C., 0.05 MPa), and the lens 50 is mounted on the molded body 70. In addition, the lens 50 can use what was shape | molded previously. The lenses 50 are arranged with a constant interval between the lenses 50 for dicing described later. As described above, by interposing the second portion 40b of the sealing body 40, a state in which the lens 50 is separated from the surface 30b of the light reflecting layer 30 is obtained, and molding in which a plurality of optical semiconductor devices 100 are integrally connected. The body is obtained.

  Next, as shown in FIG. 6C, the molded body in which the plurality of optical semiconductor devices 100 are integrally connected is divided (divided into pieces) into the recesses 32, and the optical semiconductor device shown in FIG. Obtain multiple 100s. For the division, an optical semiconductor device (SMD type optical semiconductor device) having one or a plurality of optical semiconductor devices can be obtained by dividing by a known method such as dicing, laser processing, water jet processing, or die processing. it can.

  In the manufacturing method of the optical semiconductor device 100 according to the present embodiment, the optical semiconductor element 20 is arranged, the optical semiconductor element 20 is sealed, and the lens 50 is arranged using the molded body 70 in which the plurality of concave portions 32 are formed. The molded body 70 is divided to obtain a plurality of optical semiconductor devices 100 at a time. Therefore, the molded body 70 is divided satisfactorily, and an optical semiconductor device can be obtained more efficiently than a conventional method for manufacturing an optical semiconductor device, and productivity can be significantly improved. In particular, the thermosetting resin composition includes (A) an epoxy resin, (B) a curing agent, (C) a curing accelerator, (D) an inorganic filler, and (E) a white pigment. When the light reflectance at a wavelength of 420 to 800 nm of the cured product is 80% or more, the thermosetting resin composition is easily adjusted according to the shape of the resin injection port (material input port) of the mold 60 Therefore, productivity can be further improved.

  Further, in the method for manufacturing the optical semiconductor device 100 according to the present embodiment, the lens 50 that covers the concave portion 32 is disposed in a state of being separated from the surface 30 b of the light reflecting layer 30 by interposing a sealing resin. In the temperature cycle test or the like, the stress is relieved, and it is possible to prevent the lens 50 or the light reflecting layer 30 from being peeled or cracked, and the reliability of the optical semiconductor device 100 can be improved. Furthermore, by arranging the lens 50 that covers the concave portion 32, it is possible to improve the luminance of the optical semiconductor device 100. Further, it is possible to suppress the adhesion of foreign matter to the sealing body 40 and improve the handling property. You can also

  EXAMPLES Hereinafter, although an Example explains this invention in full detail, this invention is not limited to these Examples.

Example 1
[Preparation of thermosetting resin composition for light reflecting layer]
The thermosetting resin composition was prepared by mixing each component by the following compounding ratio (mass part), and performing roll kneading on the conditions of kneading | mixing temperature 20-50 degreeC and kneading | mixing time 10 minutes.
(A) Epoxy resin: trisglycidyl isocyanurate, 43 parts by mass (B) Curing agent: hexahydrophthalic anhydride, 53 parts by mass (C) Curing accelerator: tetra-n-butylphosphonium-o, o-diethylphospho Rosithioate, 3 parts by mass (D) Inorganic filler: fused spherical silica (center particle size: 25 μm) (manufactured by Denki Kagaku Kogyo Co., Ltd., trade name: FB-950), 418 parts by mass (D) Inorganic filler: molten Spherical silica (center particle size: 0.5 μm) (manufactured by Admatechs, trade name: SO25R), 29 parts by mass (E) White pigment: titanium oxide (center particle size: 0.21 μm) (manufactured by Ishihara Sangyo Co., Ltd., product) Name: CR-63), 222 parts by mass (F) Coupling agent: Trimethoxyepoxysilane (manufactured by Toray Dow Corning, trade name: A-187), 1.2 parts by mass (E) Filling with white pigment The amount is thermosetting wood Of the total composition, it was 37.7% by volume.

[Fabrication of optical semiconductor device]
First, after a copper circuit was formed on the Cu—Fe alloy C194 by photoetching, Ni / Ag plating was applied to the circuit to obtain a lead frame having a thickness of 0.15 mm.

  Next, using a transfer molding machine (manufactured by M-Tex Matsumura Co., Ltd., trade name: MF-FS01), the thermosetting resin composition prepared as described above was molded at a mold temperature of 180 ° C., a curing time of 90 seconds, and a molding pressure. Molding was performed by a MAP molding method under a condition of 6.9 MPa, and a light reflecting layer was formed on the lead frame to obtain a substrate for mounting an optical semiconductor device. As the mold, a collective mold having 160 concave portions (cavities) arranged in a matrix of 10 vertical × 16 horizontal is used. The cavity size was 3 mm × 3 mm per unit and the depth was 0.5 mm.

  A die bond agent (manufactured by Hitachi Chemical Co., Ltd., trade name: EN4620K) was printed on the connection terminal (conductor member) at the center of the lead frame exposed in each recess of the substrate for mounting an optical semiconductor device by a stamping method. Next, an optical semiconductor element (blue element, manufactured by Cree, trade name: EZ700) was placed on the die bond agent. Then, the die bond agent was heat-cured (150 ° C., 1 hour), and the optical semiconductor element was fixed on the connection terminal. And the surface of the optical semiconductor element and the connection terminal (conductor member) arrange | positioned at the side surface side of a lead frame were electrically connected using the gold wire.

  Subsequently, a gel-like silicone transparent sealing resin (manufactured by Momentive Performance Materials, trade name: XE-14-C2042, elastic modulus (room temperature): 0 on the optical semiconductor device mounting substrate using a dispenser. 0.03 MPa) was supplied by the potting method. As a result, each recess was filled with a sealing resin, and a 200 μm thick sealing resin layer was formed in the recess and on the surface of the light reflecting layer. Thereafter, degassing was performed under reduced pressure.

  The lens molded body was disposed at a position on each concave portion on the sealing resin layer, and the lens molded body was bonded to the sealing resin layer. Thereafter, the sealing resin was cured by heating and pressing (150 ° C., 0.05 MPa, 5 hours), and the lens molded body was mounted on the substrate for mounting an optical semiconductor device. In addition, the lens molded object was produced by injection-molding alicyclic olefin resin (Nippon ZEON Co., Ltd. make, brand name: ZEONEX480).

  After the sealing resin is cured, the optical semiconductor device continuous in a matrix is separated into pieces using a dicing device (trade name: DAD381 manufactured by DISCO Corporation), and a single optical semiconductor device is provided. A plurality of optical semiconductor devices (SMD type LEDs) were manufactured. An optical semiconductor device that is continuous in a matrix form has a soft transparent resin formed between a hard optical semiconductor mounting substrate and a hard lens molded body. Further, peeling between the optical semiconductor mounting substrate or lens molded body and the transparent resin was suppressed. For this reason, the optical semiconductor devices continuous in a matrix are diced well, and a plurality of optical semiconductor devices can be obtained with high productivity.

  In addition, the light reflectivity in wavelength 460nm of the light reflection layer (cull part) was 94%. The light reflectance was measured using CM-508d (trade name) manufactured by Minolta.

(Example 2)
An optical semiconductor device was produced in the same manner as in Example 1 except that the type of the sealing resin was changed. As the sealing resin, a gel-like silicone transparent sealing resin (trade name: JCR6110, manufactured by Toray Dow Corning Co., Ltd.) in which a yellow phosphor (product name: P46-Y1) is dispersed is used. : 0.03 MPa). The optical semiconductor device continuous in a matrix form is diced satisfactorily as in Example 1 because a soft transparent resin is formed between a hard optical semiconductor mounting substrate and a hard lens molded body. The optical semiconductor device can be obtained with high productivity.

(Example 3)
An optical semiconductor device was fabricated in the same manner as in Example 1 except that a sealing resin layer having a thickness of 3 μm was formed in the recess and on the surface of the light reflecting layer. The optical semiconductor device continuous in a matrix form is diced satisfactorily as in Example 1 because a soft transparent resin is formed between a hard optical semiconductor mounting substrate and a hard lens molded body. The optical semiconductor device can be obtained with high productivity.

(Comparative Example 1)
An optical semiconductor device was fabricated in the same manner as in Example 1 except that the sealing resin layer was not formed in the recess and on the surface of the light reflecting layer. Optical semiconductor devices that are continuous in a matrix form tend to be susceptible to chipping of the optical semiconductor mounting substrate and lens molded body and peeling between the optical semiconductor mounting substrate or lens molded body and the transparent resin during dicing. A plurality of optical semiconductor devices could not be obtained with high productivity.

(Reliability evaluation of optical semiconductor devices)
The following items were evaluated for the optical semiconductor devices of Examples 1 to 3 and Comparative Example 1. Each evaluation result is shown in Table 1.

[Appearance evaluation of optical semiconductor devices]
The appearance of each package obtained in the examples and comparative examples was visually observed. “A” indicates that no defects such as voids have occurred in the lens after manufacturing and the transparent sealing resin filled in the package recess, and “B” indicates that the generation of voids is 10% or less of the entire cavity. The case where void generation exceeded 10% of the entire cavity was evaluated as “C”.

[Aging test]
A current of 250 mA was passed through the optical semiconductor element, the optical flux after the optical semiconductor device was held in an oven at 100 ° C. for 1000 hours was measured, and the retention rate of the luminous flux after 1000 hours with respect to the initial luminous flux was as follows: Evaluation based on the criteria.
A: 70% or more of the initial luminous flux, B: less than 70% of the initial luminous flux, 50% or more, C: less than 50% of the initial luminous flux

[Temperature cycle test]
The occurrence of cracks in the light reflecting layer and the lens after 1000 cycles of a temperature cycle in which the optical semiconductor device was cycled from −55 ° C./15 minutes to 125 ° C./15 minutes was evaluated according to the following criteria.
A: No crack, C: Crack generation

[Reflow test]
After holding the optical semiconductor device in an environment of 85 ° C. and 85% RH for 7 hours, the optical semiconductor device is housed in a 260 ° C. reflow furnace (made by Furukawa Electric Co., Ltd., trade name: Salamanda XNA). The presence or absence of internal peeling or cracking was evaluated according to the following criteria.
A: No peeling or cracking, C: Peeling or cracking occurred

  As shown in Table 1, in Examples 1 to 3 in which the sealing resin layer was formed in the recess and on the surface of the light reflecting layer, the optical semiconductor device could be obtained with high productivity, whereas the sealing was performed. In Comparative Example 1 in which the stop resin layer was not formed, it was confirmed that the optical semiconductor device could not be obtained with high productivity. In Examples 1 and 2 in which the thickness of the sealing resin layer is in the range of 5 to 500 μm, the aging test, the temperature cycle test, and the example 3 in which the thickness of the sealing resin layer is 3 μm It was confirmed that the result of the reflow test was excellent.

  DESCRIPTION OF SYMBOLS 10 ... Wiring member, 20 ... Optical semiconductor element, 30 ... Light reflection layer, 30a ... Through-hole, 30b ... Surface, 32 ... Recessed part, 40 ... Sealing body, 50 ... Lens, 70 ... Molded body, 100 ... Optical semiconductor device .

Claims (10)

A light reflecting layer in which a plurality of through holes are formed by transfer molding using a thermosetting resin composition is formed on a wiring member, and a plurality of recesses formed by closing one opening of the through hole with the wiring member. Obtaining a formed molded body; and
Placing each of the optical semiconductor elements in the recess,
Supplying a sealing resin to the recess in which the semiconductor element is disposed so as to cover the surface of the light reflecting layer;
A step of curing the sealing resin after disposing a lens covering the recess in a state of being spaced from the surface of the light reflecting layer by interposing the sealing resin;
Dividing the molded body into the recesses to obtain a plurality of optical semiconductor devices, and a method for manufacturing an optical semiconductor device.   The thermosetting resin composition includes (A) an epoxy resin, (B) a curing agent, (C) a curing accelerator, (D) an inorganic filler, and (E) a white pigment, and the thermosetting resin 2. The method of manufacturing an optical semiconductor device according to claim 1, wherein the light reflectance of the cured product of the composition at a wavelength of 420 to 800 nm is 80% or more.   The (D) inorganic filler is at least one selected from the group consisting of silica, alumina, magnesium oxide, antimony oxide, aluminum hydroxide, magnesium hydroxide, barium sulfate, magnesium carbonate and barium carbonate. A method for manufacturing an optical semiconductor device according to claim 2.   The method for manufacturing an optical semiconductor device according to claim 2, wherein the white pigment (E) is an inorganic hollow particle.   The method for manufacturing an optical semiconductor device according to claim 2, wherein the (E) white pigment is titanium oxide.   6. The method of manufacturing an optical semiconductor device according to claim 2, wherein a center particle diameter of the (E) white pigment is 0.1 to 50 μm.   The total amount of the (D) inorganic filler and the (E) white pigment is 10 to 85% by volume with respect to the entire thermosetting resin composition. The manufacturing method of the optical semiconductor device as described in any one.   The method of manufacturing an optical semiconductor device according to claim 1, wherein the sealing resin has an elastic modulus of 0.001 to 10 MPa.   The said lens contains at least 1 sort (s) chosen from the group which consists of an acrylic resin, a urethane resin, a silicone resin, a fluororesin, an epoxy resin, and an alicyclic olefin resin, The any one of Claims 1-8 characterized by the above-mentioned. A method for manufacturing the optical semiconductor device according to the item.   An optical semiconductor device manufactured using the manufacturing method according to claim 1.

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