JP2011071506A - 垂直面発光半導体素子 - Google Patents
垂直面発光半導体素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 103
- 230000008878 coupling Effects 0.000 claims abstract description 19
- 238000010168 coupling process Methods 0.000 claims abstract description 19
- 238000005859 coupling reaction Methods 0.000 claims abstract description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 79
- 229910002601 GaN Inorganic materials 0.000 claims description 72
- 230000003287 optical effect Effects 0.000 claims description 27
- 238000002310 reflectometry Methods 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 52
- 238000000034 method Methods 0.000 description 40
- 239000000463 material Substances 0.000 description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 19
- 229910052802 copper Inorganic materials 0.000 description 19
- 239000010949 copper Substances 0.000 description 19
- 150000004767 nitrides Chemical class 0.000 description 18
- 238000005086 pumping Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- 238000001816 cooling Methods 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 12
- 238000010521 absorption reaction Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 239000002800 charge carrier Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000006911 nucleation Effects 0.000 description 6
- 238000010899 nucleation Methods 0.000 description 6
- 230000000737 periodic effect Effects 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000985 reflectance spectrum Methods 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- 238000003631 wet chemical etching Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JMNQYAXOMXHZAP-ZETCQYMHSA-N (2s)-5-(diaminomethylideneamino)-2-(propylamino)pentanoic acid Chemical compound CCCN[C@H](C(O)=O)CCCNC(N)=N JMNQYAXOMXHZAP-ZETCQYMHSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 101001114132 Naja sputatrix Neutral phospholipase A2 B Proteins 0.000 description 1
- 101001114133 Naja sputatrix Neutral phospholipase A2 muscarinic inhibitor Proteins 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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Abstract
【解決手段】ポンプ光源と、半導体利得構造と、利得構造サブキャビティと、凹面出力結合反射鏡とを備え、前記ポンプ光源が前記利得構造サブキャビティに対して、前記ポンプ光源によって発せられる光が前記利得構造サブキャビティに入射して前記利得構造サブキャビティを発光させるように配置されており、さらに、前記利得構造サブキャビティが前記凹面出力結合反射鏡に対して、前記利得構造サブキャビティによって発せられる光を、前記凹面出力結合反射鏡に入射させ、前記利得構造サブキャビティの前記上端面に反射させて、前記利得構造サブキャビティをさらに発光させるように配置されていることを特徴とする発光素子、が提供される。
【選択図】図2
Description
ΣG N(厚さn)(屈折率n)
式中、層nは、量子井戸層、バリア層、および拡散層を含む。すなわち、利得構造16は、各層の厚さにその層の屈折率を掛けた積の合計であり、ポンプ波長とレーザ波長の整数倍でもある厚さを有する。
以下は、本開示の一実施形態による、まず半導体利得構造を形成し、次に完全な発光素子を形成するためのステップおよび条件の具体例である。この例によれば、全キャビティ長は、405nmポンプ波長で約14λ/2の長さを有するように選択され、これは、460nmレーザ波長での12λ/2の長さに対応する(レーザ波長は一般に460nm〜500nmの範囲である)。それによって、11の発光InGaN層およびPLAを、405nmのポンプ波長または460nmのレーザ波長を有する光の定在波パターンの波腹に配置された状態で組み込むことができる。
この具体例では、全キャビティ長が、460nmで10λ/2の長さを有するように選択される。それによって、20の発光InGaN層およびPLAを、460nmのレーザ波長を有する光の定在波パターンの波腹に配置された状態で組み込むことができる。
この例では、全キャビティ長が、460nmで6λ/2の長さを有するように選択される。それによって、DBR構造と半導体エアインターフェースの間に垂直導波路が形成される。
Claims (4)
- ポンプ光源と、
ヒートシンク、及び前記ヒートシンク上に配置された分布ブラッグ反射器構造を備える半導体利得構造と、
前記分布ブラッグ反射器構造上に配置された、上下の端面を有する利得構造サブキャビティであって、少なくとも窒化ガリウムまたは関連化合物を備え、それぞれが、実質的に0.0<y≦0.4のInyGa1−yNの上下層の間に配置された実質的に0.10≦x≦0.5のInxGa1−xNの量子井戸層を備える複数の量子井戸構造が形成されており、前記量子井戸層が、単一、二重、および三重の量子井戸群の中から選択される群として主光軸を定義するように配置されており、前記各量子井戸群が、ポンプ波長とレーザ波長の定在波パターンの波腹の間の局所的オーバーラップによって決定される前記半導体利得構造の前記レーザ波長のビームの定在波パターンの前記波腹に位置し、一般に前記波腹を中心とする前記利得構造サブキャビティと、
凹面出力結合反射鏡と
を備え、
前記ポンプ光源が前記利得構造サブキャビティに対して、前記ポンプ光源によって発せられる光が前記利得構造サブキャビティに入射して前記利得構造サブキャビティを発光させるように配置されており、さらに、前記利得構造サブキャビティが前記凹面出力結合反射鏡に対して、前記利得構造サブキャビティによって発せられる光を、前記凹面出力結合反射鏡に入射させ、前記利得構造サブキャビティの前記上端面に反射させて、前記利得構造サブキャビティをさらに発光させるように配置されていることを特徴とする、
発光素子。 - 前記ヒートシンクには、前記ヒートシンクを完全に貫通して延在する開口が形成されており、これによって、前記ポンプ光源によって発せられる光ビームが前記開口内を進み、前記主光軸に沿って前記利得構造サブキャビティの前記下端面に入射し、さらに、前記利得構造サブキャビティによって発せられる光ビームが、前記主光軸に沿ったビーム路で、前記利得構造サブキャビティの前記上端面から前記利得構造サブキャビティを出る請求項1に記載の発光素子。
- 前記分布ブラッグ反射器構造は、440nm〜550nmの波長の光に対して少なくとも99.9%の反射率を有し、370nm〜425nmの波長範囲の光に対して5%未満の反射率を有し、さらに、前記凹面出力結合反射鏡は、440nm〜550nmの光を少なくとも99.5%反射し、300nmより短い波長の光を実質的により多く透過させる請求項2に記載の発光素子。
- 前記利得構造サブキャビティ上端面と前記凹面出力結合反射鏡の間の前記ビーム路に配置された周波数逓倍結晶構造をさらに含む請求項3に記載の発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/564,264 US8000371B2 (en) | 2009-09-22 | 2009-09-22 | Vertical surface emitting semiconductor device |
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JP2015518282A (ja) * | 2012-04-26 | 2015-06-25 | コーニンクレッカ フィリップス エヌ ヴェ | 光学的にポンピングされた垂直の外部空洞の表面発光レーザーデバイス |
EP4318830A1 (en) | 2022-07-29 | 2024-02-07 | Nichia Corporation | Light source device and semiconductor device |
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EP4318830A1 (en) | 2022-07-29 | 2024-02-07 | Nichia Corporation | Light source device and semiconductor device |
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JP5770989B2 (ja) | 2015-08-26 |
EP2299549A3 (en) | 2016-03-09 |
EP2299549A2 (en) | 2011-03-23 |
EP2299549B1 (en) | 2018-04-04 |
US20110069729A1 (en) | 2011-03-24 |
US8000371B2 (en) | 2011-08-16 |
US20110268143A1 (en) | 2011-11-03 |
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