JP2011049401A5 - - Google Patents
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- JP2011049401A5 JP2011049401A5 JP2009197237A JP2009197237A JP2011049401A5 JP 2011049401 A5 JP2011049401 A5 JP 2011049401A5 JP 2009197237 A JP2009197237 A JP 2009197237A JP 2009197237 A JP2009197237 A JP 2009197237A JP 2011049401 A5 JP2011049401 A5 JP 2011049401A5
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上記目的を達成するために、光源からの光を用いてマスクを照明する照明光学系と、前記マスクのパターンを基板に投影する投影光学系とを備える露光装置において、前記投影光学系の瞳面に形成される光強度分布及び偏光分布を含む有効光源分布をコンピュータによって決定する決定方法であって、前記投影光学系の瞳面を複数の領域に分割する分割ステップと、前記分割ステップで分割した複数の領域のうち少なくとも1つの領域を選択する選択ステップと、前記選択ステップで選択した少なくとも1つの領域からの光が第1の方向の直線偏光であると仮定したときに前記投影光学系の像面上の少なくとも1つの評価点に形成される像の電場振幅ベクトル(Ex1,Ey1,Ez1)を算出すると共に、前記選択ステップで選択した少なくとも1つの領域からの光が前記第1の方向に直交する第2の方向の直線偏光であると仮定したときに前記投影光学系の像面上の少なくとも1つの評価点に形成される像の電場振幅ベクトル(Ex2,Ey2,Ez2)を算出する第1の算出ステップと、前記第1の算出ステップで算出した電場振幅ベクトル(Ex1,Ey1,Ez1)、及び、電場振幅ベクトル(Ex2,Ey2,Ez2)を用いて、前記選択ステップで選択した少なくとも1つの領域の偏光方向を決定する第1の決定ステップと、を有することを特徴とする。 To achieve the above object, in an exposure apparatus comprising an illumination optical system that illuminates a mask using light from a light source and a projection optical system that projects a pattern of the mask onto a substrate, the pupil plane of the projection optical system A determination method for determining an effective light source distribution including a light intensity distribution and a polarization distribution formed by a computer by dividing the pupil plane of the projection optical system into a plurality of regions, and dividing by the dividing step A selection step of selecting at least one of a plurality of regions, and an image of the projection optical system assuming that light from the at least one region selected in the selection step is linearly polarized light in a first direction to calculate at least one electric field amplitude vector of the image formed on the evaluation points on the surface (E x1, E y1, E z1), were selected by the selecting step An image formed at at least one evaluation point on the image plane of the projection optical system assuming that light from at least one region is linearly polarized light in a second direction orthogonal to the first direction. A first calculation step of calculating an electric field amplitude vector (E x2 , E y2 , E z2 ), an electric field amplitude vector (E x1 , E y1 , E z1 ) calculated in the first calculation step, and an electric field And a first determination step of determining a polarization direction of at least one region selected in the selection step using amplitude vectors (E x2 , E y2 , E z2 ).
Claims (8)
前記投影光学系の瞳面を複数の領域に分割する分割ステップと、
前記分割ステップで分割した複数の領域のうち少なくとも1つの領域を選択する選択ステップと、
前記選択ステップで選択した少なくとも1つの領域からの光が第1の方向の直線偏光であると仮定したときに前記投影光学系の像面上の少なくとも1つの評価点に形成される像の電場振幅ベクトル(Ex1,Ey1,Ez1)を算出すると共に、前記選択ステップで選択した少なくとも1つの領域からの光が前記第1の方向に直交する第2の方向の直線偏光であると仮定したときに前記投影光学系の像面上の少なくとも1つの評価点に形成される像の電場振幅ベクトル(Ex2,Ey2,Ez2)を算出する第1の算出ステップと、
前記第1の算出ステップで算出した電場振幅ベクトル(Ex1,Ey1,Ez1)、及び、電場振幅ベクトル(Ex2,Ey2,Ez2)を用いて、前記選択ステップで選択した少なくとも1つの領域の偏光方向を、当該偏光方向と前記第1の方向とのなす角をΨとして、
に従って決定する第1の決定ステップと、
を有することを特徴とする決定方法。 In an exposure apparatus comprising an illumination optical system that illuminates a mask using light from a light source, and a projection optical system that projects a pattern of the mask onto a substrate, a light intensity distribution formed on a pupil plane of the projection optical system, and A determination method for determining an effective light source distribution including a polarization distribution by a computer,
A dividing step of dividing the pupil plane of the projection optical system into a plurality of regions;
A selection step of selecting at least one region among the plurality of regions divided in the dividing step;
The electric field amplitude of an image formed at at least one evaluation point on the image plane of the projection optical system when it is assumed that light from at least one region selected in the selection step is linearly polarized light in a first direction. A vector (E x1 , E y1 , E z1 ) is calculated, and light from at least one region selected in the selection step is assumed to be linearly polarized light in a second direction orthogonal to the first direction. A first calculation step for calculating an electric field amplitude vector (E x2 , E y2 , E z2 ) of an image that is sometimes formed at at least one evaluation point on the image plane of the projection optical system;
Using the electric field amplitude vector (E x1 , E y1 , E z1 ) calculated in the first calculation step and the electric field amplitude vector (E x2 , E y2 , E z2 ), at least 1 selected in the selection step The angle between the polarization direction of one region and the polarization direction and the first direction is Ψ,
A first determining step to determine according to:
A determination method characterized by comprising:
前記第2の算出ステップで算出した光強度値、像傾斜値又は対数像傾斜値に基づいて、前記選択ステップで選択した少なくとも1つの領域の光強度を決定する第2の決定ステップと、
を更に有することを特徴とする請求項1に記載の決定方法。 The electric field amplitude vector (E x1 , E y1 , E z1 ) and the electric field amplitude vector (E x2 , E y2 , E z2 ) calculated in the first calculation step and the polarization determined in the first determination step A second calculation step of calculating a light intensity value, an image inclination value, or a logarithmic image inclination value of an image formed at at least one evaluation point on the image plane of the projection optical system based on the direction;
A second determination step of determining the light intensity of at least one region selected in the selection step based on the light intensity value, the image inclination value or the logarithmic image inclination value calculated in the second calculation step;
The determination method according to claim 1, further comprising:
前記電場振幅ベクトル(Ex2,Ey2,Ez2)として、当該電場振幅ベクトル(Ex2,Ey2,Ez2)に座標による偏微分を施した偏微分ベクトルの加重平均値を用いることを特徴とする請求項1に記載の決定方法。 As the electric field amplitude vector (E x1 , E y1 , E z1 ), a weighted average value of partial differential vectors obtained by performing partial differentiation by coordinates on the electric field amplitude vector (E x1 , E y1 , E z1 ),
As the electric field amplitude vector (E x2 , E y2 , E z2 ), a weighted average value of a partial differential vector obtained by performing partial differentiation by coordinates on the electric field amplitude vector (E x2 , E y2 , E z2 ) is used. The determination method according to claim 1.
前記マスクのパターンを基板に投影するステップと、
を有することを特徴とする露光方法。 Illuminating the mask using the effective light source distribution determined by the determination method according to any one of claims 1 to 5,
Projecting a pattern of the mask onto a substrate;
An exposure method comprising:
露光された前記基板を現像するステップと、
を有することを特徴とするデバイスの製造方法。 Exposing the substrate using the exposure method according to claim 6;
Developing the exposed substrate;
A device manufacturing method characterized by comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2009197237A JP5607327B2 (en) | 2009-08-27 | 2009-08-27 | Determination method, exposure method, device manufacturing method, and program |
Applications Claiming Priority (1)
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JP2009197237A JP5607327B2 (en) | 2009-08-27 | 2009-08-27 | Determination method, exposure method, device manufacturing method, and program |
Publications (3)
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JP2011049401A JP2011049401A (en) | 2011-03-10 |
JP2011049401A5 true JP2011049401A5 (en) | 2012-10-04 |
JP5607327B2 JP5607327B2 (en) | 2014-10-15 |
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JP2009197237A Expired - Fee Related JP5607327B2 (en) | 2009-08-27 | 2009-08-27 | Determination method, exposure method, device manufacturing method, and program |
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Families Citing this family (1)
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CN113613545A (en) * | 2019-03-20 | 2021-11-05 | 卡尔蔡司医疗技术公司 | Patient-adjusted ophthalmic imaging system with single-exposure multi-type imaging, improved focusing, and improved display of angiographic image sequences |
Family Cites Families (5)
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JP2004079714A (en) * | 2002-08-14 | 2004-03-11 | Renesas Technology Corp | Optimal configuration determining device for aperture |
US7292315B2 (en) * | 2003-12-19 | 2007-11-06 | Asml Masktools B.V. | Optimized polarization illumination |
JP4528580B2 (en) * | 2004-08-24 | 2010-08-18 | 株式会社東芝 | Illumination light source design method, mask pattern design method, photomask manufacturing method, semiconductor device manufacturing method, and program |
JP2006216639A (en) * | 2005-02-02 | 2006-08-17 | Sony Corp | Method for designing light source intensity distribution, aligner, exposure method, and method for manufatcuring semiconductor device |
JP4838866B2 (en) * | 2009-02-10 | 2011-12-14 | キヤノン株式会社 | A determination method, an exposure method, and a device manufacturing method for determining an exposure parameter and a reticle pattern. |
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2009
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