JP2010177423A - Projection optical system, exposure method, and equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a projection optical system which is used in order to expose a substrate with high throughput without enlarging a stage system of exposure equipment. <P>SOLUTION: There is provide a projection optical system PL for projecting an image of a pattern provided on a first surface onto a second surface. The projection optical system includes a dual partitioning optical system 50 for dividing illumination light IL from the pattern into two illumination light ILA and ILB and an image forming optical system 51 for leading the two illumination light ILA and ILB to two exposure regions 18A and 18B of the second surface and forming the image of the pattern on the exposure regions 18A and 18B. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a projection optical system that projects an image of a pattern provided on a first surface onto a second surface, an exposure technique using the projection optical system, and a device manufacturing technique using the exposure technique.

  An exposure apparatus used in a photolithography process is required to increase throughput (productivity). Therefore, two mask stages each moving the mask, a combining optical element that combines and branches the exposure light from the two masks, two optical systems that respectively guide the two branched exposure lights to the exposure region, and An exposure apparatus has been proposed that includes two substrate stages that independently move two substrates exposed in two exposure regions (see, for example, Patent Document 1). According to this exposure apparatus, since two substrates can be scanned and exposed in parallel with a pattern image obtained by synthesizing the patterns of two masks, a higher throughput can be obtained as compared with the case where each substrate is exposed.

International Publication No. 2007/094470 Pamphlet

In the conventional exposure apparatus, since two substrates are exposed in parallel, two substrate stages are required, which may increase the size of the exposure apparatus.
In view of such circumstances, an object of the present invention is to provide a projection optical system that can be used to expose a substrate with high throughput without increasing the size of a stage system of an exposure apparatus. Another object of the present invention is to provide an exposure technique and a device manufacturing technique using the projection optical system.

A projection optical system according to the present invention is a projection optical system that projects an image of a pattern provided on a first surface onto a second surface, a splitting optical system that divides a light beam from the pattern into a plurality of light beams, An imaging optical system that guides the light beam to a plurality of positions on the second surface and forms an image of the pattern at the plurality of positions.
In addition, an exposure apparatus according to the present invention holds a mask provided with a pattern and places a pattern surface of the mask on the first surface, and a second image of the pattern provided on the first surface. The projection optical system of the present invention that projects onto a surface, and a substrate stage that holds the substrate and places the exposure surface of the substrate on the second surface thereof.

Further, the exposure method according to the present invention arranges a pattern surface of a mask provided with a pattern on the first surface, and an image of the pattern provided on the first surface by using the projection optical system of the present invention. Is projected onto the second surface, and the exposure surface of the substrate is disposed on the second surface.
Further, the device manufacturing method according to the present invention uses the exposure apparatus or exposure method of the present invention to transfer an image of the pattern onto the substrate, and converts the substrate onto which the pattern image has been transferred into the image of the pattern. Processing correspondingly.

  According to the projection optical system of the present invention, a pattern image is formed at a plurality of positions on the second surface. For example, by arranging the surface of the substrate to be exposed on the second surface, An image of the pattern can be exposed in parallel to the position. Therefore, by using this projection optical system, the substrate can be exposed with high throughput without increasing the size of the stage system of the exposure apparatus.

It is a perspective view which shows the exposure apparatus used in 1st Embodiment. (A) is a diagram showing the projection optical system PL of FIG. 1, and (B) is an enlarged plan view showing two exposure regions 18A and 18B of FIG. 1 (A). (A) is a plan view showing an example of a relative position change between the wafer of FIG. 1 and the two exposure areas 18A and 18B, and (B) shows two shot areas during exposure on the wafer of FIG. 3 (A). (C) is an enlarged plan view showing one shot region on the wafer. FIG. 4 is a plan view showing a change in relative position between the wafer and two exposure regions 18A and 18B following the state of FIG. It is a flowchart which shows an example of the exposure operation | movement of 1st Embodiment. (A) is a figure which shows the projection optical system of 2nd Embodiment, (B) is an enlarged plan view which shows two exposure area | regions 18A and 18B of FIG. 6 (A). (A) is a figure which shows the projection optical system of the modification of 2nd Embodiment, (B) is an enlarged view which shows the phase grating of FIG. 7 (A). It is a flowchart which shows an example of the manufacturing process of an electronic device.

[First Embodiment]
Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. In the present embodiment, the present invention is applied when exposure is performed by a scanning stepper type exposure apparatus which is a scanning exposure type projection exposure apparatus.
FIG. 1 shows a schematic configuration of an exposure apparatus 100 according to the present embodiment. In FIG. 1, an exposure apparatus 100 forms an illumination area 18 on a pattern surface (object surface) of a reticle R (mask) with an exposure light source (not shown) and illumination light (exposure light) IL for exposure from the exposure light source. And an illumination optical system 10 for illuminating. Further, the exposure apparatus 100 includes a reticle stage RST that moves the reticle R, and a wafer W (substrate) on which a photoresist (photosensitive material) is coated with an image of a pattern in the illumination area 18 of the reticle R under illumination light IL. ) Controls the overall operations of the projection optical system PL formed in the first and second exposure regions 18A and 18B on the surface (image plane), the wafer stage WST for positioning and moving the wafer W, and the entire apparatus. A main control system 2 composed of a computer and other drive systems are provided.

  Hereinafter, the Z axis is taken in parallel with the optical axis AX of the projection optical system PL, the X axis and the Y axis are taken in two orthogonal directions in a plane perpendicular to the Z axis (substantially parallel to the horizontal plane in the present embodiment), and X The description will be made assuming that the rotation (inclination) directions around axes parallel to the axis, the Y axis, and the Z axis are the θx, θy, and θz directions, respectively. In the present embodiment, the direction parallel to the Y axis (Y direction) is the scanning direction of reticle R and wafer W during scanning exposure.

As the exposure light source, an ArF excimer laser (wavelength: 193 nm) is used. Other exposure light sources include an ultraviolet pulse laser light source such as a KrF excimer laser (wavelength 248 nm), a harmonic generation light source of a YAG laser, a harmonic generation device of a solid laser (semiconductor laser, etc.), or a discharge lamp such as a mercury lamp. Can also be used.
The illumination optical system 10 is an optical integrator (fly-eye lens, rod integrator, diffractive optical element) as disclosed in, for example, Japanese Patent Application Laid-Open No. 2001-313250 (corresponding US Patent Application Publication No. 2003/0025890). Etc.), a fixed and variable reticle blind (fixed and variable field stop), a condenser optical system, and the like. The variable reticle blind is used to open and close the illumination area 18 in the Y direction at the beginning and end of a period in which the reticle R is moved in the + Y direction or the −Y direction to perform one scanning exposure.

  The illumination optical system 10 illuminates the illumination area 18 of the pattern area PA on the pattern surface (here, the lower surface) of the reticle R, which is defined and opened / closed by the reticle blind, with a substantially uniform illuminance distribution. As an example, the illumination area 18 is a rectangle elongated in the X direction (non-scanning direction). In addition, the intensity distribution of the illumination light IL on the pupil plane (a plane conjugate with the exit pupil) in the illumination optical system 10 is not suitable depending on illumination conditions such as normal illumination, dipole or quadrupole illumination, or annular illumination. The setting mechanism shown in the figure can be switched to a circular area centered on the optical axis, two or four partial areas decentered from the optical axis, or a ring-shaped area centered on the optical axis.

Further, alignment marks 16A and 16B are formed on the reticle R so as to sandwich the pattern area PA in the X direction. The reticle R can be aligned based on the positions of the alignment marks 16A and 16B.
Under the illumination light IL, the pattern (circuit pattern) in the illumination area 18 of the reticle R is reduced by a predetermined projection magnification β (for example, 1/4, 1/5, etc.) via the bilateral telecentric projection optical system PL. Magnification), for example, first and second exposure areas 18A and 18B on two shot areas SA (i, j) and SA (i, j + 1), which will be described later, adjacent in the Y direction on the wafer W (respectively). It is projected onto a region conjugate with the illumination region 18. The projection optical system PL is disposed in the vicinity of the pattern surface (object surface) of the reticle R, uses a two-split optical system 50 that divides the illumination light IL from the reticle R into two light beams, and these two light beams. An image forming optical system 51 for forming an image of the pattern in the illumination area 18 on the exposure areas 18A and 18B, and an image position adjusting optical system for adjusting the positions of the second exposure area 18B in the X and Y directions. 56 (see FIG. 2A). The two-split optical system 50 is disposed between the reticle R and the imaging optical system 51.

  2A shows the projection optical system PL of FIG. 1, and FIG. 2B shows the two exposure areas 18A and 18B of FIG. 2A. Here, assuming that normal illumination is used, in FIG. 2A, the illumination area 18 of the reticle R has a predetermined numerical aperture (opening angle) at the time of exposure and has a principal ray (the center of the exit pupil of the projection optical system PL). ) Is illuminated by illumination light IL parallel to the optical axis AX. The split optical system 50 of the projection optical system PL includes a first illumination light ILA that travels in the −Z direction from the illumination area 18 of the reticle R in the −Z direction and a first illumination light ILA that travels in the approximately + Y direction. A prism member 53 that divides the illumination light into two illumination lights ILB, a first mirror 54 that bends the second illumination light ILB in the −Z direction so that the principal ray is parallel to the optical axis AX, and the first illumination light ILA. And a second mirror 55 that bends in the −Z direction so that the principal ray is parallel to the optical axis AX. The prism member 53 and the mirrors 54 and 55 are supported by a barrel (not shown) of the projection optical system PL via a holding member (not shown), and this barrel is supported by a frame mechanism (not shown).

  The prism member 53 has a pentagonal shape on the ZY plane, a half mirror surface 53a that divides the illumination light IL from the illumination region 18 into two illumination lights ILA and ILB having the same light amount, and a first divided part. And a mirror surface 53b that bends the illumination light ILA substantially in the -Y direction. As a result, the two illumination lights ILA and ILB emitted from the two-split optical system 50 have their chief rays parallel to the optical axis AX and their chief rays having a predetermined interval LY / β (β Is separated by a projection magnification of the projection optical system PL) and enters the imaging optical system 51. The interval LY will be described later. The interval LY / β is an interval when the amount of adjustment of the position in the X direction and the Y direction of the second illumination light ILB (second exposure region 18B) by the image position adjustment optical system 56 described below is zero. is there.

  Further, in the present embodiment, on the optical path of the second illumination light ILB between the first mirror 54 and the imaging optical system 51, as an example, a minute portion is driven by a driving unit (not shown) around an axis parallel to the Y axis. An image position adjustment optical system 56 including a first movable transmission plate 57X that is rotated and a second movable transmission plate 57Y that is slightly rotated by a drive unit (not shown) around an axis parallel to the X axis is disposed. . The main control system 2 controls the rotation angle of the movable transmission plates 57X and 57Y to adjust the position of the second illumination light ILB, and consequently the position of the second exposure region 18B in the X and Y directions on the wafer W. To do. The movable transmission plates 57X and 57Y of the image position adjusting optical system 56 are supported by a barrel (not shown) of the projection optical system PL via a driving unit (not shown).

  Further, as an example, in the vicinity of the second mirror 54, the rotation driving unit 63 is fixed to a frame mechanism (not shown), and is rotatable by the rotation driving unit 63 so as to shield the second illumination light ILB as necessary. The shutter 62 is supported. The operation of the rotation drive unit 63 is controlled by the main control system 2. The main control system 2 blocks the second illumination light ILB with the shutter 62 via the rotation drive unit 63 in a period in which the second illumination light ILB does not need to be used.

  The imaging optical system 51 of the projection optical system PL includes, as an example, a front group lens system 51a and a rear group lens system 51b, and a pupil of the projection optical system PL between the front group lens system 51a and the rear group lens system 51b. An aperture stop AS is disposed on a plane (a plane conjugate with the exit pupil). The lens systems 51a and 51b and the aperture stop AS are each supported by a lens barrel (not shown) of the projection optical system PL via a holding member. The imaging optical system 51 is telecentric on both sides, condenses the light beam emitted from the pattern in the illumination area 18 on the pattern surface of the reticle R and passed through the two-split optical system 50, and the image of the pattern is converted into the wafer W Form on the surface. That is, with respect to the imaging optical system 51, the pattern surface of the reticle R (the object surface of the projection optical system PL and the imaging optical system 51) and the surface of the wafer W (the image plane of the projection optical system PL and the imaging optical system 51). Is conjugate, and the projection magnification of the imaging optical system 51 is the same as the projection magnification β of the projection optical system PL. Thus, the imaging optical system 51 is a refractive system, but a catadioptric system or the like can also be used as the imaging optical system 51.

  However, in the present embodiment, the two illumination lights ILA and ILB that have passed through the two-split optical system 50 are incident on the imaging optical system 51 with the Y-direction interval of the principal ray entering LY / β. The illumination lights ILA and ILB emitted from the optical system 51 form an image of the pattern in the illumination area 18 in the exposure areas 18A and 18B with the Y-direction interval of the principal rays. In this case, since the illumination area 18 is a rectangle elongated in the X direction, as shown in FIG. 2A, the exposure areas 18A and 18B are each a rectangle elongated in the X direction by reducing the illumination area 18 by the projection magnification β. The distance between the centers of the exposure regions 18A and 18B in the Y direction is LY. Also, assuming that the design length in the Y direction of the shot area SA (i, j) on the wafer W is SY, and the width in the Y direction of the scribe line area SL between two adjacent shot areas is SLY, the interval LY is The sum of the lengths SY and SLY is set as follows.

LY = SY + SLY (1)
As an example, the shot area SA (i, j) has a width in the X direction of 26 mm and a length SY in the Y direction of 33 mm. The width SLY of the scribe line area SL is about several hundred μm or less, and the exposure areas 18A and 18B. The width in the Y direction (slit width) is about 8 mm. Further, the width in the X direction of the exposure areas 18A and 18B is about the width in the X direction of the shot area SA (i, j).

  When the arrangement of shot areas on the wafer W (shot arrangement) is as designed, and the first exposure area 18A is arranged in a predetermined positional relationship on the shot area SA (i, j), The second exposure area 18B is arranged on the shot area SA (i, j + 1) adjacent to the shot area SA (i, j) in the −Y direction in the same positional relation as the predetermined positional relation. However, in practice, the shot arrangement slightly changes due to linear expansion / contraction (scaling) of the wafer W or the like, so the position of the second exposure region 18B is adjusted using the image position adjustment optical system 56 in accordance with the change. It is configured to be possible.

  Returning to FIG. 1, the reticle R is sucked and held on a reticle stage RST via a reticle holder (not shown), and the reticle stage RST is placed on an upper surface of the reticle base 12 parallel to the XY plane via an air bearing. Yes. The reticle stage RST can move on the reticle base 12 in the Y direction at a constant speed, and can finely adjust the position in the X direction, the Y direction, and the rotation angle in the θz direction. Two-dimensional position information (position information) including at least the position in the X direction and the Y direction of the reticle stage RST and the rotation angle in the θz direction (position information) includes a moving mirror (or reflecting surface) provided on the reticle stage RST, It is measured by a reticle-side interferometer system including an X-axis laser interferometer 14X and a Y-axis two-axis laser interferometer 14YA, 14YB, and is supplied to the stage drive system 4 and the main control system 2. The stage drive system 4 controls the position, speed, and rotation angle of the reticle stage RST via a drive mechanism (not shown) based on the position information and control information from the main control system 2.

  On the other hand, wafer W is sucked and held on wafer stage WST via wafer holder 20, and wafer stage WST moves on the upper surface parallel to the XY plane of wafer base 26 in the X and Y directions via air bearings. A stage 24 and a Z tilt stage 22 are provided. The Z tilt stage 22 having the wafer holder 20 individually drives, for example, three Z driving units (not shown) that are displaceable in the Z direction, and the optical axis AX direction (Z direction) of the Z tilt stage 22 (wafer W). ) And the rotation angle in the θx and θy directions.

  Further, on the side surface of the projection optical system PL, for example, multiple points of an oblique incidence system having the same configuration as that disclosed in, for example, JP-A-6-283403 (corresponding US Pat. No. 5,448,332) is disclosed. Auto focus sensor (not shown) is provided. With this autofocus sensor, the defocus amount in the Z direction and the tilt angles in the θx and θy directions with respect to the image plane of the projection optical system PL on the surface of the wafer W are obtained and supplied to the stage drive system 4. The stage drive system 4 drives the Z tilt stage 22 so that the surface of the wafer W is focused on the image plane of the projection optical system PL based on the measurement result of the autofocus sensor.

  In order to measure the two-dimensional position information (position information) of wafer stage WST, the side surface substantially perpendicular to the X-axis and Y-axis of Z-tilt stage 22 of wafer stage WST is a mirror-finished reflecting surface, The reflecting surface is used as a moving mirror. A rod-shaped movable mirror may be used instead of the reflecting surface. An X-axis laser interferometer 36XP is arranged facing the reflecting surface substantially perpendicular to the X-axis of the Z tilt stage 22, and a Y-axis two-axis laser interferometer 36YA is facing the reflecting surface almost perpendicular to the Y-axis. , 36YB are arranged. In addition to this, a laser interferometer (not shown) is arranged.

  Two-dimensional position information including at least the position in the X direction, the Y direction, and the rotation angle in the θz direction of the Z tilt stage 22 (wafer W) by the wafer side interferometer system including the laser interferometers 36XP and 36YA, 36YB (Position information) is measured and supplied to the stage drive system 4 and the main control system 2. The position information is also supplied to the alignment control system 6. The stage drive system 4 determines the two-dimensional position of the XY stage 24 of the wafer stage WST via a drive mechanism (not shown) based on the position information and the control information from the main control system 2. Control.

Further, on the side surface in the + Y direction of the projection optical system PL, for example, an image processing type wafer alignment system 38 is held by a frame mechanism (not shown) by an off-axis method for measuring the position of the alignment mark on the wafer W. The measurement result of the wafer alignment system 38 is supplied to the alignment control system 6.
As shown in FIG. 3C, each shot area SA (i, j) of the wafer W is provided with a pair of two-dimensional alignment marks WM1 and WM2, for example, on a scribe line area SL surrounding the shot area SA (i, j). ing. The alignment control system 6 processes the measurement results of the positions of a predetermined number of alignment marks on the wafer W, and obtains the array coordinates of all shot areas on the wafer W by, for example, the so-called enhanced global alignment (EGA) method. To the main control system 2.

  A flat reference member 28 is fixed on the Z tilt stage 22 of the wafer stage WST in FIG. 1, and a pair of two-dimensional slit patterns 30A and 30B (see FIG. A) and a two-dimensional fiducial mark 32 are formed. The aerial image measurement system 34 that receives the light flux that has passed through the slit patterns 30A and 30B is housed on the bottom surface of the reference member 28 in the Z tilt stage 22, and the detection signal of the aerial image measurement system 34 is supplied to the alignment control system 6. ing. The aerial image measurement system 34 can measure the position of the image of the alignment mark 16A, 16B of the reticle R by the projection optical system PL. Further, the positional relationship (baseline) between the center (exposure center) of the image of the pattern area PA of the reticle R and the detection center of the wafer alignment system 38 can be obtained by detecting the reference mark 32 with the wafer alignment system 38. it can.

Based on the array coordinates and base line information of all shot areas on the wafer W, the main control system 2 performs the pattern of the shot area and the pattern area PA of the reticle R at the time of scanning exposure of each shot area of the wafer W. The reticle stage RST and the wafer stage WST are controlled via the stage drive system 4 so that the image of FIG.
Hereinafter, an example of the exposure operation of the exposure apparatus 100 of the present embodiment will be described with reference to the flowchart of FIG. This exposure operation is controlled by the main control system 2. At this time, as shown in FIG. 3A, for example, the shot arrangement of the wafer W to be exposed includes a large number of shot areas having the same size as the shot area SA (i, j) in the X direction and the Y direction. They are arranged with a scribe line region indicated by a dotted line therebetween. For convenience of explanation, the shot area SA (i, j) is i-th in the −X direction (i = i = i = i) with reference to the virtual shot area SA (1,1) located in the most + X direction and + Y direction. , 1,... I) and jth (j = 1, 2,... J) in the −Y direction (I and J are integers of about 10 or more, for example). In this case, the shot area SA (i, j + 1) is adjacent to the shot area SA (i, j) in the −Y direction. Of the shot areas SA (i, j), for example, a shot area in which more than half of the area falls within the effective area of the wafer W is an effective shot area to be exposed. Arrangement information of effective shot areas and information indicating positions of shot areas that have been exposed therein are stored in the storage device of the main control system 2 as shot maps.

  First, in step 101, the reticle R is loaded on the reticle stage RST of FIG. 1, and the position of the image by the projection optical system PL of the alignment marks 16A and 16B of the reticle R is measured using the aerial image measurement system 34. Based on this measurement result, the stage drive system 4 adjusts the rotation angle of the reticle R with respect to the reference member 28 via the reticle stage RST (alignment of the reticle R). Further, the reference mark 32 of the reference member 28 is detected by the wafer alignment system 38, and the alignment control system 6 obtains the baseline.

  Next, an unexposed wafer W coated with a photoresist is loaded onto wafer stage WST (step 102), and the position of alignment marks attached to a predetermined number of shot areas on wafer W is detected by wafer alignment system 38. Then, the alignment control system 6 obtains the array coordinates of all the shot areas SA (i, j) on the wafer W from the detection result (step 103). These array coordinates and baseline information are supplied to the main control system 2. Further, the pattern area PA of the reticle R moves to the + Y side scanning start position with respect to the illumination area 18 (closed at this stage) via the reticle stage RST.

  Next, the wafer stage WST is moved so that the unexposed shot area (SA (i, j)) to be exposed on the wafer W comes before the first exposure area 18A (here, the −Y direction side). Move (step movement) in the X and Y directions (step 104). Further, at step 105, the main control system 2 refers to the shot map described above, and is adjacent to the shot area SA (i, j) in the -Y direction and is an unexposed shot area SA (i, j +) to be exposed. Determine if 1) exists. If the shot area SA (i, j + 1) exists, the operation proceeds to step 106. Then, the main control system 2 uses the shot area SA (i, j) as a reference from the array coordinates of the shot area SA (i, j) and SA (i, j + 1) as shown in FIG. As described above, positional deviation amounts ΔX and ΔY in the X and Y directions from the design position B3 of the shot area SA (i, j + 1) are obtained. Further, the main control system 2 moves the second exposure region 18B (closed at this stage) from the design position B4 to the X and Y directions via the image position adjusting optical system 56 of FIG. The position shift amount ΔX, ΔY is moved (adjusted).

  In the next step 107, the main control system 2 synchronously drives the reticle stage RST and the wafer stage WST via the stage drive system 4, and the reticle R in the -Y direction with respect to the illumination area 18 that is gradually opened in the Y direction. 3A, and as indicated by an arrow 52A in FIG. 3A, the shot area SA (i, j) on the wafer W with respect to the two exposure areas 18A and 18B gradually opened in the Y direction. And SA (i, j + 1) is moved in the + Y direction. As a result, an image by the projection optical system PL of the pattern of the reticle R is scanned and exposed in parallel with respect to two shot areas SA (i, j) and SA (i, j + 1) adjacent in the Y direction. In this case, the locus of relative movement of the exposure regions 18A and 18B with respect to the wafer W is as indicated by arrows A2 and B2 in FIG. Examples of relative movement trajectories so far are a solid-line trajectory A1 and a dotted-line trajectory B1. Then, after illumination area 18 is closed and scanning exposure is completed, reticle stage RST and wafer stage WST are stopped (step 108).

  In the next step 109, when there is an unexposed shot area to be exposed on the wafer W, the operation returns to step 104, and as an example, the wafer stage WST is moved in the + X direction as indicated by the arrow 52B (step The next shot area SA (i + 1, j) of the wafer W is moved in the + Y direction with respect to the exposure area 18A. Thereafter, in steps 105 and 106 to 108, the pattern area PA of the reticle R is moved in the + Y direction with respect to the illumination area 18 that is gradually opened, and two exposure areas that are gradually opened are indicated by arrows 52C in FIG. The shot areas SA (i + 1, j) and SA (i + 1, j + 1) on the wafer W are moved in the -Y direction with respect to 18A and 18B. The exposure areas 18A and 18B move relative to the wafer W as indicated by arrows A5 and B5. As a result, the pattern image of the reticle R is scanned in parallel with respect to the next two shot areas SA (i + 1, j) and SA (i + 1, j + 1) adjacent in the Y direction on the wafer W. Exposed. Similarly, the image of the pattern of the reticle R is sequentially exposed in parallel to two shot areas adjacent in the Y direction on the wafer W.

  On the other hand, if there is no unexposed shot area to be exposed adjacent to the exposure target shot area SA (i, j) in the -Y direction in step 105, the operation proceeds to step 110. This corresponds to, for example, the case where exposure is performed on the shot area SA (i, J) at the end in the −Y direction in FIG. In step 110, the main control system 2 blocks the second illumination light ILB by the shutter 62 in FIG. 2A, and closes the second exposure region 18B. In the next step 111, as in normal scanning exposure, the reticle stage RST and wafer stage WST are driven synchronously, and the shot area SA (i, j) of the wafer W is formed only by the first exposure area 18A that is gradually opened. Scanning exposure. Thereafter, the illumination area 18 is closed, the reticle stage RST and the wafer stage WST are stopped, and the shutter 62 in FIG. 2A is opened (step 112). Thereafter, the operation proceeds to Step 109.

  When the unexposed shot area on the wafer W runs out in step 109, the operation moves to step 113, and the wafer W on the wafer stage WST is unloaded. Thereafter, if there is an unexposed wafer in step 114, the operation returns to step 102, the wafer is exposed, and the exposure process ends when the unexposed wafer is exhausted.

  As described above, according to the exposure operation of the present embodiment, two shot areas adjacent to each other in the Y direction on the wafer W for each scanning exposure except for a part of the shot area at the peripheral edge on the wafer W. In parallel, the same image by the projection optical system PL of the pattern of the reticle R is exposed. Accordingly, the throughput can be increased approximately twice as compared with the case where one shot area is exposed for each scanning exposure.

Effects and the like of this embodiment are as follows.
(1) The projection optical system PL of this embodiment is a projection optical system that projects an image of a pattern provided on the pattern surface (object surface) of the reticle R onto the surface (image surface) of the wafer W. A two-split optical system 50 that divides the illumination light IL (light beam) into two illumination lights ILA and ILB, and the two illumination lights ILA and ILB are guided to two exposure regions 18A and 18B on the surface of the wafer W, respectively. An imaging optical system 51 that forms an image of the pattern in the regions 18A and 18B is provided.

  According to this projection optical system PL, images of the same pattern of the reticle R are formed in the two exposure areas 18A and 18B on the wafer W, so that two shot areas on the wafer W are formed in the exposure areas 18A and 18B. Exposure in parallel (simultaneously). Therefore, although the projection optical system PL is increased in size to some extent, the wafer W can be exposed with high throughput without increasing the size of the stage system.

  In this embodiment, the projection optical system PL exposes the two exposure regions 18A and 18B in parallel. However, the projection optical system PL divides the light flux from the reticle R into three or more light fluxes. May be guided to three or more exposure areas on the wafer W, and the image of the pattern of the reticle R may be exposed to three or more exposure areas. Thereby, the throughput can be further increased.

  (2) Further, the two-split optical system 50 divides the light flux from the pattern so that the image of the pattern of the reticle R formed in the two exposure regions 18A and 18B is projected in the same direction. Accordingly, two different shot areas on the wafer W can be simultaneously scanned and exposed by the exposure areas 18A and 18B by scanning the wafer W in the + Y direction or the −Y direction during the scanning exposure.

  (3) The two-divided optical system 50 is disposed in the vicinity of the pattern surface of the reticle R (the range in which the principal ray is parallel to the optical axis AX), that is, between the pattern surface of the reticle R and the imaging optical system 51. The illumination light IL (the principal ray is parallel to the optical axis AX) from the pattern of the reticle R is divided into two illumination lights ILA and ILB each having the principal ray parallel to the optical axis AX. That is, the two-split optical system 50 divides the illumination light IL from the pattern of the reticle R into two illumination lights ILA and ILB that travel substantially parallel to the illumination light IL. Further, the imaging optical system 51 forms a reduced image such as 1/4 or 1/5 of the pattern of the reticle R in the exposure regions 18A and 18B.

  In this case, since the imaging optical system 51 tends to have a longer working distance on the pattern surface (object surface) side of the reticle R, the two-split optical system 50 can be easily arranged. Further, the two illumination lights ILA and ILB are incident on the imaging optical system 51 substantially parallel to the illumination light IL from the reticle R, and the distance between the principal rays of the illumination lights ILA and ILB is, for example, that of the imaging optical system 51. The interval multiplied by the projection magnification β is the interval between the centers of the exposure regions 18A and 18B. Accordingly, the interval LY in the Y direction at the center of the exposure areas 18A and 18B can be easily set to a desired value of the expression (1) by the interval between the principal rays of the illumination lights ILA and ILB.

  (4) It is also possible for the imaging optical system 51 to form an enlarged image of the pattern of the reticle R in the exposure regions 18A and 18B. In this case, since the image forming optical system 51 tends to have a longer working distance on the image plane side, the two-divided optical system 50 is disposed between the image forming optical system 51 and the surface of the wafer W. The illumination light from the imaging optical system 51 may be divided by the system 50 into two illumination lights that travel substantially parallel to this light beam.

In the case where the imaging optical system 51 is an equal magnification system, the two-split optical system 50 may be arranged on either the reticle R side or the wafer W side.
Further, even if the projection magnification β of the imaging optical system 51 is any of reduction, equal magnification, or enlargement, the imaging optical system 51 forms a conjugate plane (intermediate imaging plane) with the pattern surface of the reticle R. The two-divided optical system 50 may be formed on the intermediate image plane or in the vicinity thereof.

(5) Also, since the imaging optical system 51 in FIG. 2A is a telecentric optical system on the side of the two-split optical system 50, the exposure region 18A depends on the distance between the principal rays of the two illumination lights ILA and ILB that are incident. , 18B can be easily calculated.
(6) The projection optical system PL also includes an image position adjustment optical system 56 that corrects the position of the second exposure region 18B on the surface of the wafer W. Accordingly, even if the shot arrangement of the wafer W is slightly deviated from the design value due to linear expansion / contraction of the wafer W or a minute rotation, the two adjacent shot areas on the wafer W are accurately scanned by the two exposure areas 18A and 18B. Can be exposed.

(7) In this embodiment, the illumination area 18 of the reticle R is a rectangle elongated in the X direction, but the illumination area 18 may be, for example, an arc.
(8) In addition, the exposure apparatus 100 of the present embodiment holds a reticle R provided with a pattern, and places a pattern surface of the reticle R on the object plane of the projection optical system PL, and a reticle stage RST on the object plane. A projection optical system PL that projects an image of the provided pattern onto the image plane, and a wafer stage WST that holds the wafer W and places the surface (exposure surface) of the wafer W on the image plane are provided.

Further, the exposure method by the exposure apparatus 100 is provided on the object surface using the projection optical system PL, the step 101 for arranging the pattern surface of the reticle R provided with the pattern on the object surface of the projection optical system PL. It includes a step 107 for projecting an image of the pattern onto the image plane, and a step 104 for arranging the surface (exposure plane) of the wafer W on the image plane.
Therefore, since two shot areas on the wafer W can be exposed in parallel by the projection optical system PL, high throughput can be obtained without increasing the size of the stage system.

(9) In this case, the movement of wafer stage WST along the Y direction (scanning direction) is synchronized with the movement of reticle stage RST along the direction corresponding to the Y direction (Y direction) via projection optical system PL. The projection optical system PL projects the image of the pattern of the reticle R onto the two exposure regions 18A and 18B arranged along the Y direction.
Further, the exposure method projects the image of the pattern of the reticle R onto the exposure areas 18A and 18B arranged along the Y direction, and moves the wafer W along the Y direction and the projection optical system PL. Step 107 is included in which the movement of the reticle R along the direction corresponding to the Y direction (Y direction) is performed synchronously.

The exposure areas 18A and 18B are simultaneously arranged on different shot areas (partition areas) on the wafer W, respectively. Accordingly, two shot areas on the wafer W can be scanned and exposed in parallel via the projection optical system PL.
In the present embodiment, the exposure regions 18A and 18B are separated in the scanning direction, but the exposure regions 18A and 18B may be separated in a non-scanning direction (X direction) orthogonal to the scanning direction. In this case, scanning exposure can be performed in parallel on two shot regions adjacent to each other in the X direction on the wafer W by one scanning exposure.

  In the projection optical system PL shown in FIG. 2A, the material (refractive index) and shape of the prism member 53 and the image position adjusting optical system 56 are set so as not to cause a difference in optical path length between the illumination lights ILA and ILB. Is set. However, a member (not shown) for correcting the optical path length may be further provided so that the optical path length difference does not occur.

  Further, the shutter 62 may be provided on the illumination light ILA side, or the shutter may be provided on both the illumination lights ILA and ILB, and any one of the shutters may be selectively operated. By selectively using the shutter in this way, it is possible to easily cope with the case where neither the + Y side or the −Y side shot area is exposed.

  5 may be performed during the period in which steps 107 and 111 are executed. If the determination is affirmative (Yes) (when moving to the next shot), In 112, scanning movement (Y-direction movement) and step movement (X-direction movement) may be performed simultaneously.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIGS. 6 (A) and 6 (B). The exposure apparatus used in this embodiment uses the projection optical system PLA of FIG. 6A instead of the projection optical system PL of FIG. 1, and the position of the illumination area 18 of the reticle R on the optical axis AX. On the other hand, it is the same as the exposure apparatus 100 of FIG. 1 except that it is shifted in the −Y direction. Hereinafter, the configuration of the projection optical system PLA will be described. 6A and 6B, portions corresponding to those in FIGS. 2A and 2B are denoted by the same reference numerals, and detailed description thereof is omitted.

  FIG. 6A shows the double-sided telecentric projection optical system PLA of this embodiment, and FIG. 6B is an enlarged plan view showing two exposure areas 18A and 18B by the projection optical system PLA of FIG. 6A. is there. As shown in FIG. 6B, also in the present embodiment, the interval LY in the Y direction at the center of the exposure areas 18A and 18B is determined when position adjustment by an image position adjustment optical system (not shown) is not performed. The sum (formula (1)) of the length SY in the Y direction of the shot area SA (i, j) on the wafer W and the width SLY of the scribe line area is set.

  6A, the illumination area 18 on the pattern surface of the reticle R is illuminated by illumination light IL (exposure light) from an illumination optical system similar to the illumination optical system 10 of FIG. However, in the present embodiment, the center of the illumination area 18 is separated from the optical axis AX of the projection optical system PLA by a distance LYR in the −Y direction. A projection magnification (for example, a reduction magnification of 1/4, 1/5, etc.) β from the reticle R of the projection optical system PLA to the surface of the wafer W, and the Y direction of the center of the two exposure regions 18A, 18B on the wafer W The distance LYR is set to ½ of the distance between the areas on the reticle R conjugate with the exposure areas 18A and 18B as follows.

LYR = LY / (2 · β) (2)
The projection optical system PLA includes a bilateral telecentric first imaging optical system 51A composed of a front group lens system 51Aa and a rear group lens system 51Ab, a bilateral telecentric second imaging optical system 51B, and a front group lens system 51Aa. And a rear split lens system 51Ab, a two-split optical system 59 is provided. In this case, the first imaging optical system 51A forms an image obtained by multiplying the pattern of the pattern surface of the reticle R by β1 on the intermediate imaging surface 58, and the second imaging optical system 51B An image obtained by further multiplying the pattern image by β2 is formed on the surface of the wafer W. The product of the projection magnifications β1 and β2 is β. An aperture stop AS is disposed on the pupil plane of the second imaging optical system 51B, that is, the pupil plane of the projection optical system PLA (a plane conjugate with the exit pupil). The two-split optical system 59 is disposed at a position conjugate with the aperture stop AS, and specifically, is disposed at or near the front focal plane of the rear group lens system 51Ab (the rear focal plane of the front group lens system 51Aa). ing.

  The two-split optical system 59 of the present embodiment transmits the depolarization element 59a that converts the polarization state of the illumination light IL incident obliquely from the front group lens system 51Aa into a random (non-polarized) state, and the depolarization element 59a. Of the illumination light IL, for example, the P-polarized component (ordinary ray) is directly emitted as the second illumination light ILB, and the S-polarized component (abnormal ray) is bent at an angle symmetrical to the illumination light ILB with respect to the optical axis AX. A Rochon prism 59b as a polarization optical element that emits as the first illumination light ILA, and a depolarization element 59c that converts the polarization states of the illumination light ILA and ILB into a random state are provided. As an example, each of the depolarization elements 59a and 59c can be configured by combining two quartz plates whose thickness gradually changes. Furthermore, the light amounts of the illumination lights ILA and ILB are substantially the same.

As a result, two illumination lights ILA and ILB that are symmetrically inclined about an axis parallel to the X axis with respect to the optical axis AX are emitted from the two-divided optical system 59, and the principal rays of the emitted illumination lights ILA and ILB are emitted. Passes through the rear group lens system 51Ab on the intermediate imaging plane 58 at a position separated by the next interval LY1 about the optical axis AX in the Y direction.
LY1 = 2 · LYR · β1 (3)
Further, since the projection magnification of the second imaging optical system 51B is β2, the principal rays of the illumination lights ILA and ILB pass through the second imaging optical system 51B and the next interval LY ′ in the Y direction on the wafer W. It is incident on the center of the exposure areas 18A and 18B separated by a distance.

LY ′ = LY1 · β2 = 2 · LYR · β1 · β2 (4)
Here, using the relationship of equation (2) and the relationship of β = β1 · β2, equation (4) coincides with the target interval LY as follows.
LY ′ = LY (5)
In the present embodiment, for example, an image position adjustment similar to that of the image position adjustment optical system 56 in FIG. 2A is performed at the position 61 on the optical path of the intermediate illumination plane 58 or the second illumination light ILB in the vicinity thereof. An optical system (not shown) is arranged, and a shutter (not shown) for shielding the illumination light ILB is arranged in the vicinity of the position 61.

Effects and the like of this embodiment are as follows.
(1) In the projection optical system PLA of the present embodiment, the two-split optical system 59 is a position conjugate with the exit pupil of the second imaging optical system 51B (or projection optical system PLA) with respect to the surface (image plane) of the wafer W. The illumination light IL from the pattern of the reticle R is divided into two illumination lights ILA and ILB that travel in different directions. Therefore, the pattern image of the reticle R can be formed in parallel in the two exposure areas 18A and 18B separated on the wafer W by the illumination lights ILA and ILB. Therefore, as in the first embodiment, the stage system of the exposure apparatus The wafer W can be exposed with high throughput without increasing the size.

The two-split optical system 59 may be disposed in the vicinity of a position conjugate with the exit pupil (a region in which the position on the image plane changes according to the tilt angle of the light beam with respect to the optical axis AX).
(2) Further, the two-split optical system 59 has two illumination lights IL traveling from the pattern of the reticle R in a direction symmetrical to the Y direction with respect to the optical axis AX of the first imaging optical system 51A (projection optical system PLA). The illumination light is divided into ILA and ILB. Therefore, the distance LY between the exposure areas 18A and 18B on the wafer W can be easily adjusted only by adjusting the distance LYR from the optical axis AX of the illumination area 18 on the reticle R.

(3) Since the Lotion prism 59b is used as the polarizing optical element in the two-split optical system 59, the two exposure areas 18A and 18B can be easily moved by displacing the illumination area 18 from the optical axis AX. Can be separated.
As the polarization optical element, a Wollaston prism can also be used. However, in the Wollaston prism, the ordinary ray and the extraordinary ray out of the luminous flux incident in parallel to the normal of the surface are bent and emitted at a symmetric angle. Therefore, when a Wollaston prism is used, in FIG. 6A, the center of the illumination area 18 of the reticle R is arranged on the optical axis AX, and the illumination light IL from the illumination area 18 is illuminated by the Wollaston prism. Like the light ILA and ILB, the light is emitted at a symmetrical angle with respect to the optical axis AX.

As a modification of the second embodiment, as shown by the projection optical system PLB in FIG. 7A, a phase grating 60 as a diffraction grating is used instead of the two-split optical system 59 including a polarizing optical element. It is also possible to do.
In FIG. 7A in which the same reference numerals are given to the portions corresponding to FIG. 6A, the conjugate with the exit pupil of the second imaging optical system 51B (or projection optical system PLB) in the first imaging optical system 51A. A phase grating 60 having periodicity in the Y direction is arranged at a certain position. As shown in the enlarged view of FIG. 7B, the phase grating 60 has a step d where the phase difference is 180 ° (for example, λ / 2 in the optical path length difference using the wavelength λ of the illumination light IL). Concave and convex patterns are formed in the direction with a predetermined period. In this case, when the illumination light IL is incident on the phase grating 60 perpendicularly, the 0th-order light IL (0) is almost lost, and the + 1st-order diffracted light IL (+1) and the -1st-order diffracted light IL (-1) are symmetrical in the Y direction. It is injected at an angle.

In FIG. 7A, the illumination area 18 having the center on the optical axis AX on the pattern surface of the reticle R is illuminated by the illumination light IL. Other configurations are the same as those of the second embodiment shown in FIG.
According to the projection optical system PLB of FIG. 7A, the illumination light IL from the illumination region 18 of the reticle R is incident on the phase grating 60 almost perpendicularly via the front group lens system 51Aa and from the phase grating 60. The + 1st order diffracted light and the −1st order diffracted light are emitted as the second illumination light ILB and the first illumination light ILA, respectively, at symmetric angles with respect to the optical axis AX. The illumination lights ILA and ILB form an image of the illumination area 18 on the intermediate imaging surface 58 via the rear lens group system 51Ab, respectively, and then the Y direction on the surface of the wafer W via the second imaging optical system 51B. Are incident on the exposure regions 18A and 18B separated by a distance LY. Therefore, the projection optical system PLB can also expose the image of the pattern of the reticle R in parallel to the two exposure areas 18A and 18B on the wafer W.

Further, as the phase grating 60, a transmissive member having a uniform transmittance on which a concavo-convex pattern is formed is used. In addition, although the appearance is a flat plate as the phase grating 60, a distributed refractive index type diffraction grating in which the refractive index distribution in the Y direction periodically changes may be used.
Further, since zero-order light is not generated from the phase grating 60, the illumination light IL from the reticle R can be irradiated onto the exposure regions 18A and 18B with a small light loss, and an unnecessary pattern is exposed on the wafer W. Is prevented.

  Of the diffracted light emitted from the diffraction grating, the ± 1st order diffracted light is used for exposure of the wafer W. However, even if some other 0th order light and 3rd or higher order diffracted light are generated ( (Second-order diffracted light is not normally generated), and the influence is small as long as the photoresist on the wafer W is not exposed. Therefore, as the phase grating 60, a diffraction grating or the like that slightly generates zero-order light can be used. Alternatively, a spatial filter (light shielding member) may be provided at or near the intermediate imaging surface 58 to shield the 0th order light and the third or higher order diffracted light.

  When an electronic device (or microdevice) such as a semiconductor device is manufactured using the exposure apparatus 100 or the like of the above embodiment, the electronic device performs function / performance design of the electronic device as shown in FIG. Step 221, Step 222 for producing a reticle (mask) based on this design step, Step 223 for producing a substrate (wafer) which is a base material of the device and applying a resist, Reticle of the reticle by the exposure apparatus of the above-described embodiment Step of exposing pattern to substrate (photosensitive substrate), step of developing exposed substrate, substrate processing step 224 including heating (curing) and etching step of developed substrate, device assembly step (dicing step, bonding step, package) 225 as well as inspection steps) It is produced through the 26 or the like.

  In other words, the device manufacturing method transfers the reticle pattern image to the substrate (wafer) using the exposure apparatus 100 or the like of the above-described embodiment, and the transferred substrate in accordance with the pattern image. Processing (step 224). At this time, according to the above-described embodiment, since exposure can be performed with high throughput without increasing the stage system of the exposure apparatus, an electronic device can be manufactured at low cost.

In the present invention, for example, the twin alignment is performed such that the alignment of the wafer on one wafer stage by the alignment system and the exposure of the wafer on another wafer stage through the projection optical system are performed in parallel. The present invention can also be applied to exposure using a wafer stage type exposure apparatus. In this case, in the normal twin-wafer stage method, the alignment time is shorter and the waiting time tends to occur in the stage on the alignment side, whereas in the present invention, the exposure time is considerably shortened and the alignment time is increased. The waiting time on the side of performing is shortened, and the exposure efficiency as a whole is increased.
Further, the present invention can be applied not only to the case of exposure using the above-described scanning exposure type exposure apparatus but also to the case of exposure using a batch exposure type exposure apparatus such as a stepper. Furthermore, the present invention can be similarly applied to exposure using an immersion type exposure apparatus disclosed in, for example, International Publication No. 2004/053955 pamphlet or European Patent Application Publication No. 1420298. .

In addition, the present invention is not limited to application to an exposure apparatus for manufacturing a semiconductor device, for example, an exposure apparatus for a display device such as a liquid crystal display element formed on a square glass plate or a plasma display, It can also be widely applied to an exposure apparatus for manufacturing various devices such as an imaging device (CCD or the like), a micromachine, a thin film magnetic head, a MEMS (Microelectromechanical Systems), and a DNA chip. Furthermore, the present invention can also be applied to an exposure process when manufacturing a mask (photomask, reticle, etc.) on which mask patterns of various devices are formed using a photolithography process.
In addition, this invention is not limited to the above-mentioned embodiment, A various structure can be taken in the range which does not deviate from the summary of this invention.

  R ... reticle, RST ... reticle stage, PL, PLA, PLB ... projection optical system, W ... wafer, WST ... wafer stage, 2 ... main control system, 4 ... stage drive system, 18 ... illumination area, 18A, 18B ... exposure Region 50, split optical system 51, 51A, 51B imaging optical system 59 split optical system 60 phase grating

Claims (17)

In a projection optical system that projects an image of a pattern provided on the first surface onto the second surface,
A splitting optical system for splitting a light beam from the pattern into a plurality of light beams;
An imaging optical system that guides the plurality of light beams to a plurality of positions on the second surface, and forms an image of the pattern at the plurality of positions;
A projection optical system comprising: (It seems to be more natural in the same direction than not to flip it, so I used it here.)
The projection optical system according to claim 1, wherein the splitting optical system splits a light beam from the pattern so that images of the pattern formed at the plurality of positions are projected in the same direction. . The splitting optical system is disposed between the first surface and at least a part of the optical system of the imaging optical system, and splits a light flux from the pattern into the plurality of light fluxes traveling in parallel with the light flux,
The projection optical system according to claim 1, wherein the imaging optical system forms a reduced image of the pattern at the plurality of positions. The splitting optical system is disposed between at least a part of the imaging optical system and the second surface, and a light beam from the pattern via the at least a part of the optical system is parallel to the light beam. Divided into a plurality of luminous fluxes going to
The projection optical system according to claim 1, wherein the imaging optical system forms an enlarged image of the pattern at the plurality of positions.   5. The projection optical system according to claim 3, wherein the imaging optical system is a telecentric optical system on a side where the divided optical system is disposed.   The splitting optical system is disposed at a position conjugate to or near the exit pupil of the imaging optical system with respect to the second surface, and splits the light flux from the pattern into the plurality of light fluxes traveling in different directions. The projection optical system according to claim 1, wherein the projection optical system is a projection optical system.   The projection optical system according to claim 6, wherein the splitting optical system splits a light beam from the pattern into the plurality of light beams traveling in a direction symmetric with respect to an optical axis of the imaging optical system.   The projection optical system according to claim 7, wherein the splitting optical system includes a polarizing optical element that splits the light flux from the pattern into the plurality of light fluxes in correspondence with two orthogonally polarized lights. (The phase grating includes an uneven grating or a distributed index grating)
The projection optical system according to claim 7, wherein the split optical system includes a phase grating.   The projection optical system according to claim 9, wherein the phase grating does not substantially generate zero-order diffracted light.   The projection optical system according to claim 1, further comprising a correction optical system that corrects an imaging position of the image of the pattern on the second surface. A mask stage for holding a mask provided with a pattern and disposing the pattern surface of the mask on the first surface;
The projection optical system according to any one of claims 1 to 11, wherein an image of the pattern provided on the first surface is projected onto a second surface;
A substrate stage for holding a substrate and arranging an exposure surface of the substrate on the second surface;
An exposure apparatus comprising: A control system that synchronizes the movement of the substrate stage along a first direction and the movement of the mask stage along a second direction corresponding to the first direction via the projection optical system;
The exposure apparatus according to claim 12, wherein the projection optical system projects the image of the pattern onto the plurality of positions arranged along the first direction. Placing the pattern surface of the mask provided with the pattern on the first surface;
Using the projection optical system according to any one of claims 1 to 11, projecting an image of the pattern provided on the first surface onto the second surface;
Disposing an exposure surface of the substrate on the second surface;
An exposure method comprising:   While projecting the image of the pattern onto the plurality of positions arranged along the first direction, the movement of the substrate along the first direction corresponds to the first direction via the projection optical system. The exposure method according to claim 14, further comprising synchronizing the movement of the mask along the second direction.   The exposure method according to claim 14, comprising simultaneously arranging the plurality of positions in different partitioned regions of the substrate. Transferring the image of the pattern to the substrate using the exposure method according to any one of claims 14 to 16;
Processing the substrate on which the image of the pattern is transferred, corresponding to the image of the pattern;
A device manufacturing method including:

Images