JP2010025822A - Physical quantity sensor and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a physical quantity sensor and a manufacturing method thereof which particularly enable reduction of a stress caused by a thermal expansion difference from a circuit board and working on a silicon substrate and moreover enable simple and adequate confirmation of soldering of a pressure sensor on the circuit board, and also to provide an installation structure of the physical quantity sensor. <P>SOLUTION: The sensor has silicon substrates 2 and 3, a displacement part (diaphragm) 8 formed in the silicon substrates 2 and 3, a detecting element for detecting a displacement amount of the displacement part, an electrode pad 11 connected electrically to the detecting element and formed on the silicon substrates, and an interposer 15 joined to the electrode pad 11. The interposer 15 is constituted by having a support base 17, a continuity part 18 formed from a joining surface (first surface) with the electrode pad 11 to a second surface, and a solder fillet forming part 22 connected electrically to the second surface side of the continuity part 18 and so formed as to be exposed on the lateral side. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention particularly relates to a physical quantity sensor formed by using MEMS technology and a method for manufacturing the same.

  A pressure sensor formed using MEMS (Micro Electro Mechanical System) technology includes a diaphragm formed on a silicon substrate, a detection element for detecting a displacement amount of the diaphragm, and the like. The

  The electrode pad electrically connected to the detection element is formed on the surface of the silicon substrate (including the diaphragm forming surface and the opposite surface). Conventionally, the pressure sensor is mounted on the circuit board directly at the electrode pad portion by soldering.

For this reason, in the conventional structure, the stress caused by the difference in thermal expansion between the silicon substrate constituting the pressure sensor and the circuit board directly acts on the silicon substrate provided with a diaphragm or the like, thereby reducing the detection accuracy of the pressure sensor. There was a problem that variation occurred.
JP 2004-177343 A JP 2007-198820 A

  Accordingly, the present invention is to solve the above-described conventional problems, and in particular, to provide a physical quantity sensor capable of reducing stress due to a difference in thermal expansion from a circuit board acting on a silicon substrate, and a method for manufacturing the same. It is said.

The physical quantity sensor in the present invention is
A silicon substrate; a displacement portion formed on the silicon substrate and displaced in accordance with a change in physical quantity; a detection element for detecting a displacement amount of the displacement portion; and the silicon substrate electrically connected to the detection element, An electrode pad formed on one surface of the substrate, and an interposer bonded to the electrode pad,
The interposer is electrically connected to the support substrate made of glass and the electrode pad, and extends from the first surface that is a joint surface with the electrode pad to the second surface that is the opposite surface of the first surface. And a conductive portion formed of silicon.

Alternatively, the physical quantity sensor in the present invention is:
A silicon substrate; a displacement portion formed on the silicon substrate and displaced in accordance with a change in physical quantity; a detection element for detecting a displacement amount of the displacement portion; and the silicon substrate electrically connected to the detection element, An electrode pad formed on one surface of the substrate, and an interposer bonded to the electrode pad,
The interposer is electrically connected to a support substrate made of silicon and the electrode pad, and extends from a first surface, which is a joint surface with the electrode pad, to a second surface, which is the opposite surface of the first surface. It is characterized by having a conductive portion made of silicon and an insulating layer interposed between the support substrate and the conductive portion.

  According to the configuration of the present invention, an interposer is provided, and the conductive portion constituting the interposer is formed of silicon, and the support substrate is formed of glass or silicon close to the thermal expansion coefficient of silicon (the conductive portion and the support). When both substrates are made of silicon, the conductive part and the support substrate are insulated by an insulating layer.) When the physical quantity sensor is mounted on the circuit board, it is caused by the difference in thermal expansion from the circuit board that acts on the silicon substrate. Stress can be effectively reduced.

  In the present invention, it is preferable that the conducting portion extending from the first surface to the second surface is formed at a corner portion of the interposer. Thereby, it is easy to form a large planar area of the conduction part, and the electric resistance value of the conduction part can be effectively reduced. In addition, it is easy to mount the interposer stably on the circuit board.

  Moreover, in this invention, it is preferable that the said electrode pad is formed in the same formation surface side as the said displacement part. Thereby, a displacement part becomes a positional relationship facing the interposer, and the displacement part can be appropriately protected by the interposer.

  In the present invention, it is preferable that the displacement portion is a diaphragm that is displaced under pressure, and the support substrate is formed with a vent hole that communicates with the diaphragm.

  The vent is formed in the thickness direction of the support substrate, and the first surface side of the support substrate is formed with a recess that communicates with the vent and has a larger planar area than the vent. It is preferable. Alternatively, the first surface of the support substrate may be formed with the concave vent hole leading to the side surface.

  Moreover, in this invention, it is preferable that the support part is provided in the space area | region between the said silicon substrate and the said support substrate except the formation area of the said displacement part.

The manufacturing method of the physical quantity sensor in the present invention is:
A silicon substrate; a displacement portion formed on the silicon substrate and displaced in accordance with a change in physical quantity; a detection element for detecting a displacement amount of the displacement portion; and the silicon substrate electrically connected to the detection element, An electrode pad formed on one surface of the substrate, and an interposer bonded to the electrode pad,
The interposer,
Forming the conductive portion on the upper surface of the silicon substrate by etching;
Filling the periphery of the conductive portion with a glass material and forming an interposer substrate made of the silicon substrate and the glass material;
A step of cutting the upper and lower surfaces of the interposer substrate so that the conductive portion is exposed from both the upper and lower surfaces;
Dividing the interposer substrate into individual interposers,
Subsequently, the step of bonding between the conductive pad exposed on one surface of the interposer and the electrode pad,
It is characterized by having.

  According to the method of manufacturing a physical quantity sensor of the present invention, an interposer including a support substrate and a conduction part can be formed easily and appropriately. In the present invention, when the physical quantity sensor is mounted on the circuit board, a physical quantity sensor capable of reducing stress due to a difference in thermal expansion from the circuit board acting on the silicon substrate can be easily and appropriately manufactured.

  In the present invention, it is preferable to divide the conductive portion by making the dicing direction orthogonal to each other at the position of the conductive portion. Thereby, a conduction | electrical_connection part can be formed in the corner part of an interposer.

  According to the configuration of the present invention, an interposer is provided, and the conductive portion constituting the interposer is formed of silicon, and the support substrate is formed of glass or silicon close to the thermal expansion coefficient of silicon (the conductive portion and the support). When both substrates are made of silicon, the conductive part and the support substrate are insulated by an insulating layer.) When the physical quantity sensor is mounted on the circuit board, it is caused by the difference in thermal expansion from the circuit board that acts on the silicon substrate. Stress can be effectively reduced.

  FIG. 1 is a perspective view of a pressure sensor (physical quantity sensor) in the present embodiment, and FIG. 2 is a cut surface of the pressure sensor shown in FIG. 1 cut along a line AA from the height direction (thickness direction). FIG. 3 is a cross-sectional view showing a mounting structure of the pressure sensor and the circuit board according to this embodiment. FIGS. 4 to 8 are cross-sectional views of the pressure sensor according to this embodiment different from FIG. FIG. 3 is a plan view of a diaphragm forming surface of the pressure sensor.

  The piezoresistive pressure sensor 1 shown in FIGS. 1 and 2 is, for example, for absolute pressure detection (that is, the inside of the cavity is vacuum).

The piezoresistive pressure sensor 1 shown in FIGS. 1 and 2 includes a first silicon substrate 2 and a second silicon substrate 3. For example, an oxide insulating layer (SiO ₂ layer) is interposed between the first silicon substrate 2 and the second silicon substrate 3 to constitute a three-layer SOI substrate.

  As shown in FIG. 2, a cavity (concave portion) 7 is formed on the upper surface of the first silicon substrate 2. As shown in FIGS. 2 and 9, a diaphragm 8 is formed by the second silicon substrate 3 located above the cavity 7. As shown in FIG. 9, the cavity 7 and the diaphragm 8 are formed at a substantially central position of the piezoresistive pressure sensor 1 in a plan view, and the plan view shape of the cavity 7 and the diaphragm 8 is a substantially rectangular shape.

  As shown in FIG. 9, the periphery of the diaphragm 8 is a fixed region 9 in which no distortion occurs even when pressure is applied to the second silicon substrate 3.

  Piezo elements B to E are formed at substantially the center of each edge of the four sides of the diaphragm 8. As shown in FIG. 9, the first piezo element B and the second piezo element C are connected in series via the first output pad 11. Further, the third piezo element D and the fourth piezo element E are connected in series via the second output pad 12.

  The first piezo element B and the third piezo element D are connected via the input pad 13, and the second piezo element C and the fourth piezo element E are connected via the ground pad 14, respectively. The wiring layer 10 connected to each of the piezo elements B to E extends on the fixed region 9, and the pads 11 to 14 are provided near the four corners of the fixed region 9. The wiring layer 10 and the electrode pads 11 to 14 are formed of a good conductor such as Au or Al by sputtering or plating.

  When the diaphragm 8 is distorted due to pressure, the resistance value of the second piezo element C and the third piezo element D increases and decreases, and the resistance value of the first piezo element B and the fourth piezo element E increases and decreases. Each of the piezo elements B to E is arranged so as to have a reverse tendency. In FIG. 1, each of the piezoelectric elements B to E in plan view has a substantially rectangular shape, but can be formed in a meander shape, for example.

  Each of the electrode pads 11 to 14 has a bump shape as shown in FIG. 2, for example, but the shape is not limited.

  As shown in FIGS. 1 and 2, an interposer 15 is provided on the second silicon substrate 3 side. As shown in FIGS. 1 and 2, a vent hole 16 penetrating from the upper surface (second surface) toward the lower surface (first surface) is formed at a substantially central portion of the interposer 15. In this embodiment, the planar shape of the vent 16 is circular, but the shape is not limited.

  The interposer 15 includes a support substrate 17 and a conductive portion 18 supported by the support substrate 17.

  As shown in FIG. 1, the support substrate 17 has a predetermined thickness and the four corners of the substantially rectangular (cuboid) plane are directed from the upper surface (second surface) 17e to the lower surface (first surface) 17f. It is a shape cut into a concave shape.

Conductive portions 18 are respectively provided in the recesses 26 formed in the support substrate 17.
Therefore, each conduction | electrical_connection part 18 is formed from the upper surface 17e of the support substrate 17 to the lower surface 17f, and is exposed in the upper surface 17e and the lower surface 17f. Moreover, in this embodiment, since each conduction | electrical_connection part 18 is provided in each recessed part 26 formed in the four corners of the interposer 15, a part of side surface of each conduction | electrical_connection part 18 is also exposed. In this embodiment, each conducting portion 18 has a rectangular parallelepiped shape, and the exposed side surface of each conducting portion 18 is formed in the same plane as the side surface 17 g of the support substrate 17.

  Here, the formation position of the conducting portion 18 is not limited to the corner portion of the interposer 15 as shown in a modified example described later. For example, a configuration in which a concave shape is cut out at a substantially central position of the side surface 17g of the support substrate 17 and the conductive portion 18 is formed in the concave portion may be employed. In particular, when the interposer 15 is not a polygonal shape such as a circle, it is preferable to provide the conducting portion 18 at an arbitrary side surface position of the interposer 15. However, when the interposer 15 has a polygonal shape, it is preferable to form the conducting portion 18 at the corner of the interposer 15.

  As shown in FIG. 2, a conductive pad 27 is formed on the upper surface (second surface) of each conductive portion 18.

  As shown in FIG. 2, the lower surface (first surface) of each conductive portion 18 of the interposer 15 and the electrode pads 11 to 14 are bonded via a bonding layer 28. Thereby, the conduction | electrical_connection part 18 and the electrode pads 11-14 are electrically connected.

  In the present embodiment, the support substrate 17 is formed of glass (for example, Pyrex (registered trademark)). The conducting portion 18 is formed of the same silicon as the first silicon substrate 2 and the second silicon substrate 3. In addition, the material of the bonding layer 28 is not particularly limited as long as it is a conductive material, but a material capable of increasing the bonding strength is selected by forming a eutectic with the electrode pads 11 to 14 and the bonding layer 23. Is preferred. The conductive pad 27 is preferably formed of a material having Ni, Cu or the like excellent in solder wettability.

  As shown in FIGS. 1 and 2, a solder ball 20 is provided on a conductive pad 27 formed on the upper surface (second surface) of each conductive portion 18.

  FIG. 3 is a diagram in which the pressure sensor 1 shown in FIGS. 1 and 2 is mounted on a circuit board 30. As shown in FIG. 3, the pressure sensor 1 is reversed from the state shown in FIGS. 1 and 2, and the interposer 15 is opposed to the circuit board 30. The conductive pads 27 formed on the interposer 15 and the solder land portions 31 of the circuit board 30 are joined by the solder 21.

  The pressure sensor 1 in this embodiment includes an interposer 15 that is bonded to electrode pads 11 to 14 formed on the second silicon substrate 3. Furthermore, in this embodiment, the conduction | electrical_connection part 18 is formed with a silicon | silicone, and the support substrate 17 is formed with glass. The thermal expansion coefficient of glass is close to that of silicon. Therefore, in this embodiment, the difference in thermal expansion coefficient between the silicon substrates 2 and 3 and the interposer 15 is very small. Therefore, when the pressure sensor 1 is mounted on the circuit board 30 as shown in FIG. 3, according to the configuration of the present embodiment, the stress acting on the silicon substrates 2 and 3 due to the thermal expansion difference is effectively reduced. It can be reduced.

  In the present embodiment, the conductive portions 18 are formed at the four corners of the interposer 15. If the conductive portions 18 are formed at the corners of the interposer 15, each conductive portion 18 can be formed as large as possible until it is exposed to the two side surfaces of the interposer 15, and at least the periphery of the corners is fixed region 9 on the silicon substrate side. Therefore, it is easy to form a large planar area of the conductive portion 18. Therefore, the electrical resistance value of the conduction part 18 can be reduced. Further, the conductive portion 18 and the solder land portion 31 can be easily joined by soldering, and the pressure sensor 1 can be stably mounted on the circuit board 30.

  As shown in FIGS. 2 and 9, the electrode pads 11 to 14 are formed on the same formation surface side as the diaphragm 8 which is a displacement portion. Thereby, as shown in FIG. 2 etc., the interposer 15 becomes the positional relationship facing the diaphragm 8. Therefore, the diaphragm 8 can be appropriately protected by the interposer 15.

  The modification of this embodiment is shown after FIG. In the form shown in FIG. 4, both the conduction portion 18 and the support substrate 17 are formed of silicon, and the conduction portion 18 and the support substrate 17 are insulated from each other by the insulating layer 33. In this way, by forming the conductive portion 18 and the support substrate 17 from silicon, it is possible to more effectively reduce the stress caused by the difference in thermal expansion from the circuit substrate acting on the silicon substrate.

  In the form shown in FIG. 5, the conductive portions 18 made of silicon are not formed at the four corners of the interposer 15 but are formed at the internal positions of the interposer 15 (support substrate 17). Therefore, only the upper and lower surfaces of the conductive portion 18 are exposed from the support substrate 17. A conductive pad 27 is formed from the upper surface (second surface) of the conductive portion 18 to the upper surface of the support substrate 17.

  In the form shown in FIG. 6, a support portion 40 that supports between the interposer 15 and the second silicon substrate 3 is provided. In forms other than FIG. 7, the interposer 15 and the second silicon substrate 3 are supported only by the electrode pads 11 to 14, but by providing the support portion 40 as shown in FIG. The space between the two silicon substrates 3 can be supported more reliably. The support portion 40 is formed in a space region with the fixed region 9 (see FIG. 9) that does not face the electrode pads 11-14. The support portion 40 is preferably formed of silicon or glass. For example, the support part 40 is formed in the same formation process as the electrode pads 11 to 14 (in this case, the support part 40 is made of the same metal material as the electrode pad), and the interposer 15 side has the same formation process as the bonding layer 28. Thus, a bonding layer is formed at a position facing the support portion 40. Then, the support portion 40 and the bonding layer, and the electrode pads 11 to 14 and the bonding layer 28 are bonded.

  In the form shown in FIG. 7, the hole diameter of the vent hole 16 formed in the thickness (height) direction of the interposer 15 is formed smaller than in other forms. In FIG. 7, a concave portion 41 communicating with the vent hole 16 is formed on the side of the support substrate 17 facing the second silicon substrate 3. In the form shown in FIG. 7, since the hole diameter of the vent hole 16 is reduced, it is possible to prevent foreign matter from passing through the vent hole 16 and accumulating between the diaphragm 8 and the interposer 15. Further, external contact with the diaphragm 8 can be suppressed. Moreover, even if a foreign substance enters between the diaphragm 8 and the interposer 15 through the vent hole 16, since the concave portion 41 having a large diameter is provided, a decrease in detection sensitivity can be suppressed.

  In the form shown in FIG. 8, a concave vent 42 that extends to the side surface is formed on the surface (second surface) of the interposer 15 that faces the second silicon substrate 3. Therefore, it is possible to suppress the entry of foreign matter as compared with a mode in which vent holes are provided in the thickness (height) direction of the interposer 15. The vent hole 42 may be formed so as to connect two or more side surfaces, or the vent hole 42 is formed so as to be interrupted at a midpoint position on the surface (second surface) facing the silicon substrate of the interposer 15. May be.

  4 to 8, the solder balls 20 may be placed on the conductive pads 27 as shown in FIGS. 1 and 2.

  Next, the manufacturing method of the interposer 15 among the pressure sensors 1 of the present embodiment will be described. Hereinafter, a manufacturing method for forming a plurality of interposers from one substrate will be described.

  In the step shown in FIG. 10, a mask layer 51 such as a resist is formed on the silicon substrate 50. These mask layers 51 are provided at positions where the conductive portions 18 of the silicon substrate 50 are to be formed. Then, the silicon substrate 50 not covered with the mask layer 51 is etched to a predetermined depth by Si deep RIE or the like (the silicon substrate 50 is scraped along the dotted line in FIG. 10). As a result, a plurality of protrusions 53 are formed on the silicon substrate 50.

  In the step shown in FIG. 11, the mask layer 51 on the protrusion 53 is removed. Subsequently, the glass material 52 in a soft state by heating is opposed to the projecting portions 53, and the glass material 52 is pressed to fill the space between the projecting portions 53 with the glass material 52 (see FIG. 12). The soft state may be a rubber state or a liquid state. In the liquid state, the glass material 52 can be poured between the projecting portions 53, and the space between the projecting portions 53 can be filled with the glass material 52. Hereinafter, the protruding portion 53 is referred to as a “conduction portion”, and the glass material 52 is referred to as a “support substrate”.

  Subsequently, in the step shown in FIG. 12, the portion of the silicon substrate 50 that is connected between the conductive portions 53 and the support substrate 52 located on the conductive portion 53 are removed by wrapping (up to the dotted line portion shown in FIG. 13). Wrapping). Thereby, the upper surface (second surface) and the lower surface (first surface) of the conductive portion 53 formed of silicon are exposed, and the interposer substrate 54 in which the support substrate 52 is formed around the conductive portion 53 is completed. .

  Subsequently, in a step shown in FIG. 13, a conductive pad 57 is formed on the upper surface of the conductive portion 53. Further, the bonding layer 58 is formed on the lower surface (first surface) side of the conduction portion 53. Further, vent holes 59 are formed in the support substrate 52.

  Subsequently, as shown in FIG. 14, the bonding layer 58 formed on the interposer substrate 54 and the electrode pads 11 to 14 formed on the surface of the silicon substrate 60 are opposed to each other, so that the interposer substrate 54 and the silicon substrate 60 are separated from each other. Join. At this point, the silicon substrate 60 has already been formed with the diaphragm 8, the cavity 7, the wiring layer 10 shown in FIG.

  Dotted lines shown in FIG. 14 indicate dicing positions with respect to the interposer substrate 54 and the silicon substrate 60. As shown in FIG. 14, the conductive portion 53 is divided by making the dicing direction orthogonal to each other at a substantially central position of the conductive pad 57 formed on the upper surface (second surface) of the conductive portion 53. Thereby, a plurality of pressure sensors shown in FIG. 1 can be obtained from the same substrate.

  As shown in FIG. 14, the conduction portions 53 can be formed at the corners of each interposer by dividing the conduction portions 53 at right angles. However, this is a preferable example, and the dicing position can be changed according to the formation position of the conductive portion.

  Moreover, the manufacturing method of the interposer board comprised from a support substrate and a conduction | electrical_connection part may be other than the above. For example, a plurality of holes penetrating the support substrate are formed in advance, and a conduction portion is formed in the holes. However, it is preferable that the supporting substrate formed of glass and the interposer substrate of the conductive portion formed of silicon are formed by the above-described manufacturing method.

  Although this embodiment has been described using a pressure sensor, it is not limited to a pressure sensor. This embodiment can be applied to a “physical quantity sensor” such as an acceleration sensor or an angular velocity sensor.

The perspective view of the pressure sensor (physical quantity sensor) in this embodiment, Sectional drawing which shows the cut surface which cut | disconnected the pressure sensor shown in FIG. 1 from the height direction (thickness direction) along the AA line, Sectional drawing which shows the mounting structure of the pressure sensor and circuit board of this embodiment, Sectional drawing of the pressure sensor of this embodiment different from FIG. Sectional drawing of the pressure sensor of this embodiment different from FIG. Sectional drawing of the pressure sensor of this embodiment different from FIG. Sectional drawing of the pressure sensor of this embodiment different from FIG. Sectional drawing of the pressure sensor of this embodiment different from FIG. Plan view of the diaphragm forming surface of the pressure sensor, 1 process drawing (sectional drawing) which shows the manufacturing method of the interposer of this embodiment, One process diagram (cross-sectional view) performed after FIG. One process diagram (cross-sectional view) performed after FIG. One process diagram (cross-sectional view) performed after FIG. A perspective view of a state in which an interposer substrate and a silicon substrate are bonded together,

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Piezoresistive type pressure sensor 2 1st silicon substrate 3 2nd silicon substrate 7 Cavity 8 Diaphragm 11-14 Electrode pad 15 Interposer 16, 42, 59 Vent 17 Support substrate 18 Conductive part 20 Solder ball 21 Solder 27, 57 Conductive pad 30 Circuit board 31 Solder land part 40 Support part 50 Silicon substrate 51, 55 Mask layer 52 Glass material (support board)
53 Projection (conduction part)
54 Interposer substrates B to E Piezo elements

Claims (10)

A silicon substrate; a displacement portion formed on the silicon substrate and displaced in accordance with a change in physical quantity; a detection element for detecting a displacement amount of the displacement portion; and the silicon substrate electrically connected to the detection element, An electrode pad formed on one surface of the substrate, and an interposer bonded to the electrode pad,
The interposer is connected to a support substrate made of glass and a second surface which is electrically connected to the electrode pad and which is a bonding surface of the electrode pad to a second surface which is opposite to the first surface. A physical quantity sensor comprising: a conductive portion formed of silicon. A silicon substrate; a displacement portion formed on the silicon substrate and displaced in accordance with a change in physical quantity; a detection element for detecting a displacement amount of the displacement portion; and the silicon substrate electrically connected to the detection element, An electrode pad formed on one surface of the substrate, and an interposer bonded to the electrode pad,
The interposer is electrically connected to a support substrate made of silicon and the electrode pad, and extends from a first surface, which is a joint surface with the electrode pad, to a second surface, which is the opposite surface of the first surface. A physical quantity sensor comprising: a conductive portion formed of silicon; and an insulating layer interposed between the support substrate and the conductive portion.   3. The physical quantity sensor according to claim 1, wherein the conduction portion extending from the first surface to the second surface is formed at a corner portion of the interposer.   The physical quantity sensor according to claim 1, wherein the electrode pad is formed on the same formation surface side as the displacement portion.   The physical quantity sensor according to claim 4, wherein the displacement portion is a diaphragm that is displaced under pressure, and the support substrate is formed with a vent hole that communicates with the diaphragm.   The vent is formed in the thickness direction of the support substrate, and the first surface side of the support substrate is formed with a recess that communicates with the vent and has a larger planar area than the vent. The physical quantity sensor according to claim 5.   The physical quantity sensor according to claim 5, wherein the first surface of the support substrate is formed with the concave vent hole extending to the side surface.   The physical quantity sensor according to claim 1, wherein a support portion is provided in a space region between the silicon substrate and the support substrate excluding a region where the displacement portion is formed. A silicon substrate; a displacement portion formed on the silicon substrate and displaced in accordance with a change in physical quantity; a detection element for detecting a displacement amount of the displacement portion; and the silicon substrate electrically connected to the detection element, An electrode pad formed on one surface of the substrate, and an interposer bonded to the electrode pad,
The interposer,
Forming the conductive portion on the upper surface of the silicon substrate by etching;
Filling the periphery of the conductive portion with a glass material to form an interposer substrate made of the silicon substrate and the glass material;
A step of cutting the upper and lower surfaces of the interposer substrate so that the conductive portion is exposed from both the upper and lower surfaces;
Dividing the interposer substrate into individual interposers,
Subsequently, the step of bonding between the conductive pad exposed on one surface of the interposer and the electrode pad,
A method of manufacturing a physical quantity sensor, comprising:   The manufacturing method of the physical quantity sensor according to claim 9, wherein the dicing direction is orthogonalized at the position of the conductive portion to divide the conductive portion.

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