JP2009212511A - Dicing sheet function-provided film for semiconductor, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a dicing sheet function-provided film for a semiconductor which does not need a cleaning process and is excellent in productivity, and also to provide a semiconductor device having the cured product of an adhesive layer in the film. <P>SOLUTION: The dicing sheet function-provided film 10 for a semiconductor is formed by laminating a dicing sheet 1 and an adhesive layer 2. The adhesive layer is composed of a resin composition containing a crosslinking reactive resin and a compound having flux activity. This semiconductor includes the cured product of the adhesive layer in the dicing sheet function-provided film for a semiconductor. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor film with a dicing sheet function and a semiconductor device.

Increasing the density of semiconductor devices in response to the recent high functionality of electronic devices and expansion to mobile applications,
The demand for high integration is increasing, and the density and density of IC packages are increasing. As a method for manufacturing these semiconductor devices, an adhesive sheet (dicing sheet) is attached to a semiconductor wafer made of silicon, gallium, arsenic, and the like, and then separated into individual semiconductor elements by dicing (
After being separated into individual pieces, expanding and picking up the separated semiconductor elements are performed, and then the semiconductor elements are transferred to an assembly process of a semiconductor device that is die-bonded to a metal lead frame, a tape substrate, an organic hard substrate, or the like. .

On the other hand, there are remarkable technological innovations for reducing the size and weight of semiconductor devices, and various package structures have been proposed and commercialized. In recent years, instead of conventional lead frame bonding, an area mounting method in which a semiconductor chip and a circuit board are bonded via a protruding electrode directly formed on a circuit surface of the semiconductor chip is becoming mainstream.

A typical example of this area mounting method is flip chip mounting. In flip chip mounting, it is common to seal the gap between a semiconductor chip and a circuit board with a resin composition for the purpose of reinforcing joints and improving reliability.

As a resin sealing method, a capillary underfill method is generally used. This method is performed by applying a liquid sealing resin composition to one side or a plurality of surfaces of a chip and flowing the resin composition into the gap between the circuit board and the chip using a capillary phenomenon (Patent Document 1).

However, the cavity underfill method requires a process of bonding a semiconductor chip and a circuit board using a flux and a flux cleaning process, which requires a long process and strict environmental management such as a problem of cleaning waste liquid. I must. Further, since the sealing is performed by a capillary phenomenon, the sealing time becomes long and there is a problem in productivity.
JP 2007-217708 A

The objective of this invention is providing the film for semiconductors with a dicing sheet function which does not require a flux washing | cleaning process and is excellent in productivity.
Moreover, the objective of this invention is providing the semiconductor device which has the hardened | cured material of the adhesive bond layer of the said film for semiconductors with a dicing sheet function.

Such an object is achieved by the present invention described in the following (1) to (11).
(1) A semiconductor film with a dicing sheet function in which a dicing sheet and an adhesive layer are laminated, wherein the adhesive layer includes a resin capable of crosslinking reaction and a compound having flux activity. A film for a semiconductor with a dicing sheet function, wherein the film is composed of a product.
(2) The semiconductor film with a dicing sheet function according to the above (1), wherein the functional surface of the flip chip type semiconductor element and the adhesive layer of the semiconductor film with a dicing sheet function are adhered to each other. .
(3) The adhesive layer of the semiconductor film with a dicing sheet function is from room temperature to 10 ° C.
When the temperature is raised to a molten state at a rate of temperature rise / minute, the melt viscosity initially decreases, reaches a minimum melt viscosity, and further increases, and the minimum melt viscosity is 10 Pa · s. The film for semiconductor with a dicing sheet function according to (2) above, which is 10,000 Pa · s or less.
(4) The film for semiconductor with a dicing sheet function according to the above (1), which has a release film between the dicing sheet and the adhesive layer.
(5) The film for a semiconductor with a dicing sheet function according to the above (1), wherein the adhesive layer of the semiconductor film with a dicing sheet function has a transparency that allows the surface of the semiconductor element to be recognized.
(6) The film for semiconductor with a dicing sheet function according to (1), wherein the resin composition further contains a film-forming resin.
(7) The film for semiconductor with a dicing sheet function according to (6), wherein the resin composition further contains a curing agent.
(8) The film for semiconductor with a dicing sheet function according to (7), wherein the resin composition further contains an inorganic filler.
(9) The film for semiconductor with a dicing sheet function according to (8), wherein the inorganic filler has an average particle size of 0.5 μm or less.
(10) The film for a semiconductor with a dicing sheet function according to (1), wherein the compound having the flux activity is a compound having at least one of a carboxyl group and a phenolic hydroxyl group.
(11) A semiconductor device comprising a cured product of the adhesive layer of the semiconductor film with a dicing sheet function according to any one of (1) to (10).

According to the present invention, it is possible to obtain a semiconductor film with a dicing sheet function which does not require a flux cleaning step and is excellent in productivity.
Moreover, according to this invention, the semiconductor device which has the hardened | cured material of the adhesive bond layer of the said film for semiconductors with a dicing sheet function can be obtained.

Hereinafter, the semiconductor film with a dicing sheet function and the semiconductor device of the present invention will be described in detail.

The film for semiconductor with a dicing sheet function of the present invention is a film for semiconductor with a dicing sheet function in which a dicing sheet and an adhesive layer are laminated, and the adhesive layer includes a resin capable of crosslinking reaction, a flux It is comprised with the resin composition containing the compound which has activity.
Moreover, the semiconductor device of this invention has the hardened | cured material of the adhesive bond layer of the film for semiconductors with the said dicing sheet function.

First, the semiconductor film with a dicing sheet function will be described.
As shown in FIG. 1, the semiconductor film with a dicing sheet function 10 includes a dicing sheet 1 and an adhesive layer 2. Although not shown, a release film may be provided between the dicing sheet 1 and the adhesive layer 2. Thereby, the dicing sheet 1
And the adhesive layer 2 can be easily separated, and the pick-up property of the semiconductor element after dicing the semiconductor wafer can be improved.

The adhesive layer 2 of the semiconductor film with a dicing sheet function 10 is composed of a resin composition containing a resin capable of crosslinking reaction and a compound having flux activity.
Examples of the resin capable of crosslinking reaction include epoxy resins, oxetane resins, phenol resins, (meth) acrylate resins, unsaturated polyester resins, diallyl phthalate resins,
In addition to those classified as so-called thermosetting resins such as maleimide resins, thermoplastic resins having functional groups such as carboxyl groups and epoxy groups can also be mentioned as the crosslinkable resins of the present invention. Among these, an epoxy resin excellent in curability and storage stability, heat resistance, moisture resistance, and chemical resistance of a cured product is preferably used.

As the epoxy resin, either an epoxy resin that is solid at room temperature or an epoxy resin that is liquid at room temperature may be used. Further, an epoxy resin that is solid at room temperature and an epoxy resin that is liquid at room temperature may be used in combination. Thereby, the design freedom of the melting behavior of the adhesive layer 2 can be further increased.

The epoxy resin that is solid at room temperature is not particularly limited, and is a novolak such as a bisphenol A type epoxy resin, a bisphenol type epoxy resin such as a bisphenol S type epoxy resin, a phenol novolac type epoxy resin, or a cresol novolak type epoxy resin. Type epoxy resin, glycidylamine type epoxy resin, glycidyl ester type epoxy resin, trifunctional epoxy resin, and polyfunctional epoxy resin such as tetrafunctional epoxy resin. More specifically, the epoxy resin that is solid at room temperature preferably includes a trifunctional epoxy resin and a cresol novolac epoxy resin that are solid at room temperature. Thereby, moisture resistance reliability can be improved.

The epoxy resin that is liquid at room temperature is not particularly limited, and is bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol A nuclear hydrogenated type epoxy resin, 4-t-butylcatechol type epoxy resin, naphthalene. Type epoxy resin and the like.

The content of the resin capable of crosslinking reaction is preferably 25% by weight or more and 75% by weight or less, and particularly preferably 45% by weight or more and 70% by weight or less, based on the entire resin composition. When the content is within the above range, good curability can be obtained, and good melting behavior can be designed.

The compound having the flux activity is not particularly limited as long as it has an effect of removing the metal oxide film by heating or the like. For example, an organic acid such as an active rosin or an organic compound having a carboxy group, an amine, a phenol, an alcohol, an azine, or the like may have a flux activity by itself or promote a flux activity.
More specifically, the compound having the flux activity includes a compound having at least one carboxyl group and / or phenolic hydroxyl group in the molecule, which may be liquid or solid.

Examples of the compound containing a carboxyl group include aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, aliphatic carboxylic acids, and aromatic carboxylic acids. Examples of the flux compound having a phenolic hydroxyl group include phenols.

Examples of the aliphatic acid anhydride include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, polysebacic acid anhydride, and the like.

Examples of the alicyclic acid anhydride include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid. An acid anhydride etc. are mentioned.

Examples of the aromatic acid anhydride include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid anhydride, ethylene glycol bistrimellitate, glycerol tris trimellitate, and the like.

Examples of the aliphatic carboxylic acid include compounds represented by the following formula (1).

From the balance of flux activity, outgas at the time of adhesion and the elastic modulus after curing of the adhesive layer 2 and the glass transition temperature, the compound represented by the formula (1) is 3 or more in the formula (1), It is preferably 10 or less, particularly preferably 4 or more and 8 or less. By setting n to be equal to or more than the lower limit value, an increase in the elastic modulus after curing can be suppressed, and the adhesiveness to the adherend can be improved. Moreover, by making n below the upper limit, it is possible to suppress a decrease in elastic modulus and further improve connection reliability.

As the compound represented by the formula (1), for example, n = 3 glutaric acid (HOOC- (CH
_{2) 3 -COOH), n =} 4 of adipic acid _{(HOOC- (CH 2) 4 -COOH} ), n = 5
Pimelic acid (HOOC— (CH ₂ ) ₅ —COOH), n = 8 sebacic acid (HOOC—
(CH ₂ ) ₈ —COOH) and n = ₁₀ HOOC— (CH ₂ ) ₁₀ —COOH—.
Other aliphatic carboxylic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, caproic acid pivalate, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, methacrylic acid, crotonic acid, Oleic acid, fumaric acid, maleic acid, oxalic acid,
Examples include malonic acid and succinic acid.

Examples of the aromatic carboxylic acid include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, platonic acid,
Pyromellitic acid, meritic acid, triylic acid, xylic acid, hemelic acid, mesitylene acid, prenicylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2
, 4-Dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6
-Dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid Naphthoic acid derivatives such as phenolphthalin; diphenolic acid and the like.

Examples of the compound having a phenolic hydroxyl group include phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2
, 4-xylenol, 2,5 xylenol, m-ethylphenol, 2,3-xylenol, meditol, 3,5-xylenol, p-tertiarybutylphenol, catechol, p-tertiaryamylphenol, resorcinol, p-octylphenol, Monomers containing phenolic hydroxyl groups such as p-phenylphenol, bisphenol A, bisphenol F, bisphenol AF, biphenol, diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol, phenol novolac resin, o-cresol novolac resin, Examples thereof include bisphenol F novolac resin and bisphenol A novolac resin.

Moreover, it is preferable that the compound which has such flux activity is a hardening | curing agent which has the flux activity which is taken in three-dimensionally by reaction with resin which can be cross-linked like an epoxy resin. Thereby, in addition to omitting the cleaning step after the flux activation, the reliability can be further improved.
As the curing agent having this flux activity, for example, at least two phenolic hydroxyl groups that can be added to a resin capable of crosslinking reaction such as an epoxy resin in one molecule, and a flux action on a metal oxide film, Examples thereof include compounds having at least one carboxyl group directly bonded to an aromatic group in one molecule. Specifically, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2
, 6-Dihydroxybenzoic acid, 3,4-dihydroxybenzoic acid, gallic acid (3,4,5-
Benzoic acid derivatives such as trihydroxybenzoic acid); naphthoic acid derivatives such as 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3,7-dihydroxy-2-naphthoic acid; phenol Phthaline; and diphenolic acid.
These compounds having flux activity may be used alone or in combination of two or more.

The content of the compound having the flux activity is not particularly limited, but is preferably 1% by weight or more and 30% by weight or less of the entire resin composition, and particularly 5% by weight or more and 25% by weight or less. Is preferred. If the content is less than the lower limit, the effect of flux activity may be insufficient, and if the content exceeds the upper limit, a resin capable of crosslinking reaction and a compound having unreacted flux activity may remain, May cause migration. Further, when the content is within the above range, the oxide film on the surface of the copper foil is reduced, and a good bond having high strength can be obtained.

The resin composition is not particularly limited, but may contain a curing agent.
Examples of the curing agent include phenols, amines, and thiols. When an epoxy resin is used as a resin capable of crosslinking reaction, good reactivity with the epoxy resin, low dimensional change upon curing, and appropriate physical properties after curing (for example, heat resistance, moisture resistance, etc.) are obtained. In this respect, phenols are preferably used.

Although it does not specifically limit as said phenols, When the physical property after hardening of the adhesive bond layer 2 is considered, bifunctional or more is preferable. Examples include bisphenol A, tetramethylbisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, trisphenol, tetrakisphenol, phenol novolacs, cresol novolacs, etc., but melt viscosity, reaction with epoxy resin When considering the properties and physical properties after curing, phenol novolacs and cresol novolacs can be preferably used.

When phenol novolacs are used as the curing agent, the content is not particularly limited, but from the viewpoint of surely curing the crosslinkable resin, it is preferably 5% by weight or more of the total resin composition, 10 weight% or more is preferable. Moreover, if epoxy resin and unreacted phenol novolak remain, it causes migration. Therefore, in order not to remain as a residue, the content is 30% of the entire resin composition.
% By weight or less is preferable, and particularly 25% by weight or less is preferable.

When the resin capable of crosslinking reaction is an epoxy resin, the content of the phenol novolac resin may be defined by an equivalent ratio with respect to the epoxy resin. Specifically, the equivalent ratio of phenol novolac to epoxy resin is preferably 0.5 or more and 1.2 or less, particularly preferably 0.6 or more and 1.1 or less, and most preferably 0.7 or more and 0.98 or less. Is preferred. By setting the equivalent ratio of the phenol novolac resin to the epoxy resin to be equal to or higher than the lower limit value, heat resistance and moisture resistance after curing can be ensured, and by setting the equivalent ratio to be equal to or lower than the upper limit value, The amount of the epoxy resin and the unreacted residual phenol novolac resin can be reduced, and the migration resistance is improved.

Examples of other curing agents include imidazole compounds and phosphorus compounds.
Although it does not specifically limit as said imidazole compound, It is preferable to use the imidazole compound whose melting | fusing point is 150 degreeC or more. Thereby, it becomes easy to aim at coexistence with hardening of the adhesive bond layer 2, and a flux function. That is, if the melting point of the imidazole compound is too low, the oxide film of the solder bump is removed, the adhesive tape is cured before the solder bump and the electrode are metal-bonded, the connection becomes unstable, and the adhesive tape is stored. It is possible to suppress the case where the property is lowered.
Examples of the imidazole compound having a melting point of 150 ° C. or higher include 2-phenylhydroxyimidazole, 2-phenyl-4-methylhydroxyimidazole, 2-phenyl-4-methylimidazole, and the like. In addition, there is no restriction | limiting in particular in the upper limit of melting | fusing point of an imidazole compound, For example, according to the adhesion temperature of the adhesive bond layer 2, it can set suitably.

When an imidazole compound is used as the curing agent, the content is not particularly limited, but is preferably 0.005% by weight or more and 10% by weight or less of the entire resin composition, particularly 0.01% by weight or more, 5% by weight or less is preferable. By making content of an imidazole compound more than the said lower limit, the function as a curing catalyst of resin which can carry out a crosslinking reaction is exhibited more effectively, and the sclerosis | hardenability of the adhesive bond layer 2 can be improved. Moreover, by setting the blending ratio of the imidazole compound to the upper limit value or less, the melt viscosity of the resin is not too high at the temperature at which the solder melts, and a good solder joint structure is obtained. Moreover, the preservability of the adhesive layer 2 can be further improved.

Examples of the phosphorus compound include triphenylphosphine; a molecular compound of a tetra-substituted phosphonium and a polyfunctional phenol compound; a molecular compound of a tetra-substituted phosphonium, a proton donor, and a trialkoxysilane compound. Among these, a molecular compound of a tetra-substituted phosphonium and a polyfunctional phenol compound, which is excellent in quick curing of the adhesive layer 2, corrosiveness to an aluminum pad of a semiconductor element, and further storage stability of the adhesive layer 2, and A molecular compound of a tetra-substituted phosphonium, a proton donor, and a trialkoxysilane compound is particularly preferable.

The resin composition is not particularly limited, but may include a film-forming resin different from the resin capable of crosslinking reaction.
Examples of the film-forming resin include phenoxy resin, polyester resin, polyurethane resin, polyimide resin, siloxane-modified polyimide resin, polybutadiene, polypropylene, styrene-butadiene-styrene copolymer, styrene-ethylene-butylene-
Styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, Polyvinyl acetate, nylon, acrylic rubber, etc. can be used. These may be used alone or in combination of two or more.

When a phenoxy resin is used as the film-forming resin, its number average molecular weight is 5
Phenoxy resins that are 15,000 to 15,000 are preferred. By using such a phenoxy resin, the fluidity of the adhesive tape before curing can be suppressed, and the interlayer thickness can be made uniform. The skeleton of phenoxy resin is bisphenol A type, bisphenol F type,
Examples include biphenyl skeleton type, but are not limited thereto. Preferably, a phenoxy resin having a saturated water absorption rate of 1% or less is preferable because foaming, peeling, and the like can be suppressed even at high temperatures during bonding and solder mounting.

In addition, as the film-forming resin, a resin having a nitrile group, an epoxy group, a hydroxyl group, or a carboxyl group may be used for the purpose of improving adhesiveness or compatibility with other resins. For example, acrylic rubber can be used.
When acrylic rubber is used as the film-forming resin, it is possible to improve the film formation stability when producing a film-like adhesive tape. In addition, since the elastic modulus of the adhesive tape can be reduced and the residual stress between the adherend and the adhesive tape can be reduced, the adhesion to the adherend can be improved.

The acrylic rubber is preferably a (meth) acrylic acid ester copolymer containing a monomer unit having an epoxy group, a hydroxyl group, a carboxyl group, a nitrile group or the like. Thereby, the adhesiveness to adherends, such as the back surface of a semiconductor element, and the coating material on a semiconductor element, can be improved more. Examples of monomers used in such a (meth) acrylic acid ester copolymer include glycidyl (meth) acrylate having a glycidyl group, (meth) acrylate having a hydroxyl group, (meth) acrylate having a carboxyl group, and a nitrile group. Examples include (meth) acrylonitrile.

Among these, it is particularly preferable to use a (meth) acrylic acid ester copolymer containing a monomer unit having a glycidyl group or a carboxyl group. Thereby, hardening of an adhesive film is further accelerated | stimulated and also the adhesiveness with respect to a to-be-adhered body can be improved.

In the case of using a (meth) acrylic acid ester copolymer containing a monomer unit having a carboxyl group, the content of the monomer unit having a carboxyl group in the copolymer is further improved in terms of improving the adhesion to the adherend. For example, it is 0.5% by weight or more, preferably 1% by weight or more of the entire (meth) acrylic acid ester copolymer. Further, the content of the monomer unit having a carboxyl group is, for example, from the viewpoint of further improving the storage stability of the adhesive film (
It is 10% by weight or less, preferably 5% by weight or less, based on the entire (meth) acrylic acid ester copolymer.

The weight average molecular weight of the (meth) acrylic acid ester copolymer is, for example, 1,000 or more, 1
It is preferably 00000 or less, preferably 3,000 or more and 900,000 or less. By setting it as the said range, the film formability of an adhesive film can be improved further, and it becomes possible to ensure the fluidity | liquidity at the time of adhesion | attachment.

The weight average molecular weight of the (meth) acrylic acid ester copolymer can be measured by, for example, gel permeation chromatography (GPC). Examples of measurement conditions include, for example, Tosoh Corp., high-speed GPC SC- 8020 instrument with TSK-GEL GM column
HXL-L, temperature 40 ° C., solvent tetrahydrofuran can be used.

The glass transition temperature of the (meth) acrylic acid ester copolymer is, for example, 0 ° C. or higher, preferably 5 ° C. or higher from the viewpoint of further improving workability by suppressing the adhesion of the adhesive film from becoming too strong. The glass transition temperature of the (meth) acrylic acid ester copolymer is
From the viewpoint of further improving the adhesiveness at a low temperature, it is, for example, 30 ° C. or less, preferably 20 ° C. or less.

The glass transition temperature of the (meth) acrylic acid ester copolymer is, for example, a constant load (10 mN) using a thermomechanical characteristic analyzer (manufactured by Seiko Instruments Inc., TMA / SS6100).
) From the inflection point when the temperature is increased from −65 ° C. at a temperature rising rate of 5 ° C./min.

The content of the film-forming resin is not particularly limited, but is 5% by weight of the entire resin composition.
As mentioned above, it is preferable to set it as 50 weight% or less. When the film-forming resin is blended within the above range, a decrease in film formability is suppressed, and an increase in the elastic modulus after the adhesive layer 2 is cured is suppressed, so that the adhesiveness to the adherend is reduced. The property can be further improved. Moreover, by setting it as the said range, the increase in the melt viscosity of the adhesive bond layer 2 is suppressed.

In addition, when properties such as heat resistance, dimensional stability and moisture resistance are particularly required, it is preferable to further contain an inorganic filler. Examples of such inorganic fillers include silicates such as talc, fired clay, unfired clay, mica, and glass, titanium oxide, alumina, fused silica (fused spherical silica, fused crushed silica), and powders such as crystalline silica. Oxides such as calcium carbonate, magnesium carbonate, hydrotalcite, hydroxides such as aluminum hydroxide, magnesium hydroxide, calcium hydroxide, sulfates such as barium sulfate, calcium sulfate, calcium sulfite, or sulfite Examples thereof include salts, borates such as zinc borate, barium metaborate, aluminum borate, calcium borate, and sodium borate, and nitrides such as aluminum nitride, boron nitride, and silicon nitride. These inorganic fillers may be used alone or in combination. Among these, silica powders such as fused silica and crystalline silica are preferable, and spherical fused silica is particularly preferable.

By including an inorganic filler in the resin composition, the heat resistance, moisture resistance, strength and the like after the resin composition is cured can be improved, and the peelability of the adhesive layer 2 from the protective film is improved. be able to. In addition, the shape of the inorganic filler is not particularly limited, but it is preferably a true sphere, whereby a resin composition suitable as the adhesive layer 2 having no anisotropy can be provided.

The average particle size of the inorganic filler is not particularly limited, but is preferably 0.5 μm or less, particularly preferably 0.01 to 0.5 μm, and most preferably 0.01 to 0.3 μm. If the average particle size is too small, the inorganic filler tends to aggregate, resulting in a decrease in strength. On the other hand, if the average particle size is too large, the transparency of the adhesive layer 2 is decreased and the semiconductor element surface is aligned. It may be difficult to recognize the mark, and it may be difficult to align the semiconductor element and the substrate.

Here, the content of the inorganic filler is not particularly limited, but is 10 to 6 of the entire resin composition.
0% by weight is preferable, and 20 to 50% by weight is particularly preferable. If the content of the inorganic filler is too small, the effect of improving heat resistance, moisture resistance, strength and the like may be reduced. On the other hand, if the content is too large, the transparency may be lowered or the adhesive layer 2 may be tacky. May decrease.

The resin composition may further include a silane coupling agent. By setting it as the structure containing a silane coupling agent, the adhesiveness to the to-be-adhered thing of the adhesive bond layer 2 can further be improved. Examples of the silane coupling agent include an epoxy silane coupling agent and an aromatic-containing aminosilane coupling agent. These may be used alone or in combination of two or more. Although content of a silane coupling agent is not specifically limited, It is preferable to set it as 0.01 to 5 weight% of the said whole resin composition.

The resin composition may contain components other than those described above. For example, various additives may be appropriately added in order to improve various properties such as resin compatibility, stability, and workability.

Next, the manufacturing method of the film 10 for semiconductors with a dicing sheet function is demonstrated easily. The adhesive layer 2 is obtained by mixing a crosslinkable resin, a compound having a flux activity, and the like, applying the mixture on a release substrate 21 such as a polyester sheet, and drying at a predetermined temperature. By half-cutting only the adhesive layer 2 of the adhesive layer 2 formed on the release substrate 21, the adhesive layer 2 can be formed into substantially the same shape as the semiconductor wafer, for example, a circular shape. In this case, the adhesive film with a peeling base material which consists of the adhesive bond layer 2 and the peeling base material 21 is obtained.
Further, when the semiconductor film 10 has a configuration in which a release film (not shown) is provided between the dicing sheet 1 and the adhesive layer 2, the adhesive layer 2 includes a resin capable of crosslinking reaction and a flux activity. It can be obtained by mixing a compound having a viscosity, etc., applying it on a release film such as a polyethylene terephthalate film, and drying at a predetermined temperature. Further, after laminating a release substrate 21 such as a polyester sheet on the adhesive layer 2 side, only the release film and the adhesive layer 2 are half-cut, so that the release film and the adhesive layer 2 are substantially the same as the semiconductor wafer. It can be the same shape, for example, a circular shape. In this case, an adhesive film with a release substrate composed of the release film, the adhesive layer 2 and the release substrate 21 is obtained.
And by laminating the dicing sheet 1 on the adhesive layer 2 of the adhesive film with a release substrate or the release film so that the pressure-sensitive adhesive layer of the dicing sheet 1 composed of the base film and the pressure-sensitive adhesive layer is in contact, The film 10 for semiconductors with a dicing sheet function comprised of the dicing sheet 1, the (release film) adhesive layer 2, and the release substrate 21 can be obtained (FIG. 2).
The dicing sheet 1 is not particularly limited, and polyester, polyethylene,
Examples thereof include resin films such as polypropylene, polybutene, polybutadiene, vinyl chloride, and ethylene-methacrylic acid copolymer, crosslinked films of these resins, and films obtained by applying a silicone resin or the like to the surface of these resins and performing a release treatment.

The thicknesses of the dicing sheet 1 and the adhesive layer 2 thus formed are respectively
3-100 micrometers is preferable and it is especially preferable that it is 10-75 micrometers. If the thickness is less than the lower limit value, the effect as the dicing sheet 1 may be reduced. If the thickness exceeds the upper limit value, it may be difficult to manufacture the product and the thickness accuracy may be reduced.

When the adhesive layer 2 of the semiconductor film with a dicing sheet function 10 is heated from room temperature to a molten state at a temperature rising rate of 10 ° C./min, the initial melt viscosity decreases, and after reaching the minimum melt viscosity, The minimum melt viscosity in the case of having an increasing characteristic is not particularly limited, but is preferably 10 Pa · s or more and 10,000 Pa · s or less, particularly 100 P
a · s or more and 3,000 Pa · s or less are preferable, most 300 Pa · s or more, 1,500
Pa · s or less is preferable. By setting the melt viscosity to the lower limit value or more, it is possible to suppress a decrease in adhesion reliability due to the adhesive layer 2 protruding from the adherend during heating, and it is possible to suppress contamination of peripheral members due to the protrusion. Furthermore, defects such as generation of bubbles and unfilling of the upper and lower circuit boards can be prevented. Furthermore, it is possible to prevent a problem that the solder is wet and spreads too much and short-circuits between adjacent electrodes. Further, by setting the value to the upper limit value or less, since the resin between the solder bump and the circuit board electrode is eliminated when the solder bump and the circuit board electrode are metal-bonded, it is possible to suppress the bonding failure.
The temperature at the minimum melt viscosity is not particularly limited, but is preferably 120 to 180 ° C, and particularly preferably 140 to 170 ° C. This is because when the adhesive layer 2 exhibits the minimum melt viscosity in the temperature range, it becomes easy to mount a semiconductor element or the like.
The melt viscosity of the adhesive layer 2 is obtained, for example, by the following measuring method.
An adhesive layer having a thickness of 100 μm is applied to a viscoelasticity measuring device (Rheo Stress RS-10).
HAAKE (manufactured by HAAKE Co., Ltd.) with a heating rate of 10 ° C./min, a frequency of 0.1 Hz, and a constant strain −
It can be measured by stress detection.

The adhesive layer 2 is not particularly limited, but preferably has transparency to the extent that the surface of the semiconductor element can be recognized. Thereby, the position alignment when joining a chip | tip and a board | substrate can be made easy.
More specifically, the adhesive layer 2 preferably has a transmittance at 630 nm of 50% or more, and particularly preferably 70 to 100%. When the transmittance is within the above range, the recognizability of the semiconductor element is particularly excellent, and the connection rate can be improved.

(Semiconductor device)
Using a peeling substrate 21, a semiconductor film 10 with a dicing sheet function constituted by an adhesive layer 2 and a dicing sheet 1 arranged in a circle substantially in the same size as a semiconductor wafer (release film). The obtained semiconductor device will be described.
First, the peeling substrate 21 is peeled from the adhesive layer 2 so that the functional surface of the semiconductor wafer 3 and the release film or the adhesive layer 2 are in contact with each other. The film 10 is laminated. Since the adhesive layer 2 is a resin composition containing a compound having flux activity, it can be directly laminated on the functional surface of the semiconductor element.

Next, as shown in FIG. 3, a semiconductor film 10 having a dicing sheet function on which a semiconductor wafer 3 is mounted is placed on the dicer table 4 so that the dicing sheet 1 is in contact with the upper surface of the dicer table 4 (upper side in FIG. 3). To do. Next, the wafer ring 5 is installed around the semiconductor wafer 3 to fix the semiconductor wafer 3. Then, the semiconductor wafer 3 is cut with the blade 6, and the semiconductor wafer 3 is separated into individual pieces to obtain a semiconductor element having the adhesive layer 2. At this time, the semiconductor film 10 with a dicing sheet function has a buffering action, and prevents a semiconductor element from being cracked or chipped when the semiconductor wafer 3 is cut.
Note that the semiconductor wafer 3 and the wafer ring 5 may be attached in advance to the semiconductor film 10 with a dicing sheet function and then placed on the dicer table 4.

Next, the semiconductor film 10 with a dicing sheet function is stretched with an expanding device, the semiconductor elements having the adhesive layer 2 separated into pieces are opened at regular intervals, then picked up, mounted on the substrate, and mounted on the substrate. Get the device.

EXAMPLES Hereinafter, although this invention is demonstrated in detail based on an Example and a comparative example, this invention is not limited to this.

Example 1
1. Preparation of Adhesive Layer Epoxy Resin (NC6000 (Epoxy Equivalent 200 g / eq)
47.00% by weight, manufactured by Nippon Kayaku Co., Ltd., and acrylate copolymer (butyl acrylate-ethyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl acrylate copolymer, Nagase Chem) as a film-forming resin Tex Co., Ltd., SG-708-6, weight average molecular weight: 500,000 19.51% by weight and acrylic resin (acrylic acid-styrene copolymer, weight average molecular weight: 5,500, UC-3900, Toa Synthetic Co., Ltd.) 9.7
5% by weight, solid phenol resin (PR-53647, hydroxyl equivalent 104 g /
OH group, manufactured by Sumitomo Bakelite Co., Ltd.) 10.26% by weight, imidazole compound (2P4MHZ, manufactured by Shikoku Kasei Kogyo Co., Ltd.) 0.08% by weight as a curing accelerator, phenol phthalin 12.88% by weight as a flux compound As a coupling agent, 0.52% by weight of propyltrimethoxysilane (KBM-303, manufactured by Shin-Etsu Chemical Co., Ltd.) as methyl ethyl ketone (
A resin varnish having a resin solid content of 40% was obtained by dissolving in MEK).

2. Manufacture of semiconductor film with dicing sheet function (1) Manufacture of adhesive film After applying the above resin varnish to a polyethylene terephthalate film (thickness 15 μm) as a release film using a comma coater, 90 ° C., 5 minutes After drying, an adhesive layer having a thickness of 40 μm was formed on the release film. Thereafter, a 38 μm thick polyester film (corresponding to the cover film of the adhesive layer) is laminated on the adhesive layer side to obtain an adhesive film with a cover film composed of a release film, an adhesive layer and a cover film. It was.

(2) Production of pressure-sensitive adhesive layer Clear Tech CT-H717 (manufactured by Kuraray Co., Ltd.) was formed into a film having a thickness of 100 μm with an extruder, and the surface was subjected to corona treatment to obtain a base film.
Next, a copolymer having a weight average molecular weight of 500,000 obtained by copolymerizing 50 parts by weight of 2-ethylhexyl acrylate, 10 parts by weight of butyl acrylate, 37 parts by weight of vinyl acetate, and 3 parts by weight of 2-hydroxyethyl methacrylate. The polymer film was applied to a 38 μm-thick polyester film (corresponding to the cover film of the pressure-sensitive adhesive layer) with a thickness of 10 μm after drying, and dried at 80 ° C. for 5 minutes. Obtained. After that, this adhesive layer is laminated on the corona-treated surface of the base film described above, with a cover film composed of a dicing sheet composed of the base film and the adhesive layer, and a cover film of the adhesive layer A dicing sheet was obtained.

(3) Manufacture of adhesive film for semiconductors (die attach film with dicing sheet function) Half the release film and adhesive layer (adhesive film) of the adhesive film with cover film described above (leave only the part bonded to the wafer) After cutting, the cover film was peeled off from the pressure-sensitive adhesive layer of the above-mentioned dicing sheet with cover film, and pasted so that the pressure-sensitive adhesive layer of the dicing sheet and the release film of the adhesive film with cover film were joined. Thereby, the die attach film with a dicing sheet function by which a base film, an adhesive layer, a release film, an adhesive film, and a cover film were constituted in this order was obtained.

3. Manufacturing of semiconductor device The cover film of the die attach film with dicing sheet function is peeled off, and the adhesive film surface is attached to the back surface of the 8-inch, 200 μm wafer at a temperature of 110 ° C. and a pressure of 0.3 MPa, and the dicing sheet function with a dicing sheet function. A wafer with a touch film was obtained.
Thereafter, the wafer is diced with a spindle rotation speed of 30,000 rp.
m, 5 mm × 5 mm square semiconductor element (60 μmφ, Sn3A at a cutting speed of 50 mm / sec
g0.5Cu bump, pitch 200μm, number of bumps 225, with PI protective film: Hitachi Ultra LS
Dicing (cutting) into a size of I company). Next, the die attach film with a dicing function was pushed up from the back surface, peeled between the release film and the adhesive, and a semiconductor element having an adhesive layer (adhesive film) adhered thereto was obtained. After aligning this semiconductor element on a BT (bismaleimide-triazine) resin substrate (0.8 mmt) coated with a solder resist (manufactured by Taiyo Ink Manufacturing Co., Ltd .: PSR4000 AUS308) using a flip chip bonder, 250 ° C. A flip chip package was obtained by pressure bonding for 10 seconds. 18
Post-curing was performed at 0 ° C. for 1 hour.
The transmittance of the adhesive layer was 97%.

(Example 2)
An acrylic ester copolymer (acrylic acid) was used without using an acrylic resin (acrylic acid-styrene copolymer, weight average molecular weight: 5,500, UC-3900, manufactured by Toa Gosei Co., Ltd.) as a film-forming resin. A butyl-ethyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl acrylate copolymer, manufactured by Nagase ChemteX Corporation, SG-708-6, weight average molecular weight: 500,000), except for 29.26% by weight. In the same manner as in Example 1.
The transmittance of the adhesive layer was 97%.

(Example 3)
A resin capable of crosslinking reaction is designated as epoxy resin (NC6000 (epoxy equivalent 200 g / eq,
Nippon Kayaku Co., Ltd.) 37.60% by weight, acrylate copolymer (butyl acrylate-ethyl acrylate-acrylonitrile-acrylic acid-hydroxyethyl acrylate copolymer, Nagase ChemteX) as film-forming resin SG-708-6, weight average molecular weight: 500,000, 15.60% by weight and acrylic resin (acrylic acid-styrene copolymer, weight average molecular weight: 5,500, UC-3900, Toa Gosei Co., Ltd. 7.80)
% By weight, solid phenol resin as a curing agent (PR-53647, hydroxyl group equivalent of 104 g / O
H group, manufactured by Sumitomo Bakelite Co., Ltd.) 8.21% by weight, imidazole compound (2P4MHZ, manufactured by Shikoku Chemicals Co., Ltd.) 0.07% by weight as a curing accelerator, phenol phthalin 10.30% by weight as a flux compound As a coupling agent, 0.42% by weight of propyltrimethoxysilane (KBM-303, manufactured by Shin-Etsu Chemical Co., Ltd.) as methyl ethyl ketone (ME
K), and silica (Quatron SP-03B, manufactured by Fuso Chemical Industry Co., Ltd., average particle size of 0.02 μm silica) was added and dispersed to obtain a resin varnish having a solid content of 40%. Otherwise, the same procedure as in Example 1 was performed.
The transmittance of the adhesive layer was 52%.

Example 4
A resin capable of crosslinking reaction is converted into an epoxy resin (epoxy equivalent 180 g / eq, Epicron 84).
0S, manufactured by Dainippon Ink & Chemicals, Inc.) 50.00% by weight, phenoxy resin (YL-6955, manufactured by Japan Epoxy Resin Co., Ltd.) 20.00% by weight as a film-forming resin,
Solid phenol resin (PR-53647, hydroxyl group equivalent 104 g / OH group, manufactured by Sumitomo Bakelite Co., Ltd.) 25.00% by weight as a curing agent, phosphorus compound (tetraphenylphosphine / phenyltrimethoxysilane / 2) as a curing accelerator , 3-dihydroxynaphthalene molecular compound) 0.50 wt% and sebacic acid 4.50 wt% as a flux compound were dissolved in methyl ethyl ketone (MEK) to obtain a resin varnish having a solid content of 40%. Otherwise, the same procedure as in Example 1 was performed.
The transmittance of the adhesive layer was 98%.

(Example 5)
In the production of a semiconductor film with a dicing function, the same procedure as in Example 1 was performed except that a semiconductor film with a dicing function was obtained as follows without using a release film.
Using a comma coater, the resin varnish obtained in the same manner as in Example 1 was applied onto a 38 μm thick polyester film (corresponding to the cover film of the adhesive layer), and then dried at 90 ° C. for 5 minutes. An adhesive layer having a thickness of 40 μm was formed on the cover film to obtain an adhesive film with a cover film comprising the adhesive layer and the cover film.
After half-cutting only the adhesive layer of the adhesive film with cover film described above (leaving only the part bonded to the wafer), the cover film was removed from the adhesive layer of the dicing sheet with cover film obtained in the same manner as in Example 1. It peeled and it stuck so that the adhesive layer of a dicing sheet and the adhesive bond layer (adhesive film) of an adhesive film with a cover film might join. Thereby, the die attach film with a dicing sheet function by which a base film, an adhesive layer, an adhesive film, and a cover film were constituted in this order was obtained.
The transmittance of the adhesive layer was 97%.

(Comparative Example 1)
Acrylate ester copolymer (butyl acrylate-ethyl acrylate-acrylonitrile copolymer, manufactured by Nagase ChemteX Corporation, SG-PZ, weight average molecular weight: 850,000) as a film-forming resin 62.12% by weight In addition, 12.88% by weight of phenolphthalin as a flux compound is dissolved in methyl ethyl ketone (MEK), and further silica (Quatron SP-03B, manufactured by Fuso Chemical Industry Co., Ltd., average particle size 0.02 μm silica) 25.0
0% by weight was added and dispersed to obtain a resin varnish having a solid content of 40%. Otherwise, the same procedure as in Example 1 was performed.
The transmittance of the adhesive layer was 98%.

(Comparative Example 2)
Solid phenolic resin (PR-53647, hydroxyl group equivalent 104 g / OH group, manufactured by Sumitomo Bakelite Co., Ltd.) 2 without using phenol phthaline, which is a flux active substance, in Example 1.
The same operation as in Example 1 was performed except that the content was changed to 3.14% by weight.
The transmittance of the adhesive layer was 96%.

(Comparative Example 3)
Using a dicing saw, spindle rotation speed is 30,000 rpm, cutting speed is 50 mm /
Dicing (cutting) into the size of a 5 mm × 5 mm square semiconductor element (60 μmφ, Sn3Ag0.5Cu bump, pitch 200 μm, number of bumps 225, with PI protective film: manufactured by Hitachi Ultra LSI Co.) in sec.
Next, a flip chip bonder is used on a BT (bismaleimide-triazine) resin substrate (0.8 mmt) coated with a solder resist (manufactured by Taiyo Ink Manufacturing Co., Ltd .: PSR4000 AUS308) by applying a flux to the functional surface of the semiconductor element. After the alignment, a flip chip package was obtained by pressure bonding at 250 ° C. for 10 seconds. Next, excess flux was cleaned using a flux cleaning solution. Thereafter, a liquid sealing resin was poured between the semiconductor element and the substrate and cured at 150 ° C. for 2 hours to obtain a semiconductor device.

The semiconductor device obtained in each example and comparative example was evaluated as follows. The evaluation items are shown together with the contents. The obtained results are shown in Table 1.

1. Productivity The productivity of other examples and comparative examples was compared using the production man-hour of comparative example 3 as a reference (100). Each code is as follows. In addition,-in a table | surface shows that it was not able to evaluate.
A: Production man-hours of Comparative Example 3 were 40 or more and less than 60 with the production man-hours of Comparative Example 3 as a reference (100).
A: The production man-hours of Comparative Example 3 were 60 or more and less than 80 with the production man-hours of Comparative Example 3 as a reference (100).
(Triangle | delta): The production man-hour of the comparative example 3 was 80 or more and less than 100 on the basis (100).
X: The production man-hour of Comparative Example 3 was 100 or more with the production man-hour of the comparative example 3 as a standard (100).

2. Exudation of the adhesive layer The exudation of the adhesive layer was visually evaluated. Each code is as follows.
A: Almost no bleeding of the adhesive layer was observed.
◯: Although the bleeding of the adhesive layer was observed, it was less than 1 mm.
Δ: Exudation of the adhesive layer was observed and was 1 mm or more and less than 5 mm.
X: Exudation of the adhesive layer was observed and was 5 mm or more.

3. Connection reliability Connection reliability was evaluated based on whether or not the obtained semiconductor device was conductive after the heat cycle test.
Specifically, the connection resistance between the semiconductor element and the substrate was measured with a digital multimeter. The measurement was performed both after manufacturing the semiconductor device and after 1,000 cycles of a temperature cycle of -65 ° C for 1 hour and 150 ° C for 1 hour. Each code is as follows.
A: Conductivity was obtained with 20/20 semiconductor devices.
A: Conductivity was obtained with 18 to 19/20 semiconductor devices.
Δ: Conductivity was obtained with 16 to 17/20 semiconductor devices.
X: Conductivity was obtained with 16 or less / 20 semiconductor devices.

As is clear from Table 1, a film for semiconductor with a dicing sheet function that does not require a flux cleaning step and has excellent productivity was obtained.
In addition, Examples 1, 4 and 5 were particularly excellent in connection reliability.

FIG. 1 is a cross-sectional view schematically showing a semiconductor film with a dicing sheet function of the present invention. FIG. 2 is a cross-sectional view schematically showing an example of a method for producing a semiconductor film with a dicing sheet function of the present invention. FIG. 3 is a cross-sectional view schematically showing a state in which a semiconductor wafer is cut using the semiconductor film with a dicing sheet function of the present invention.

DESCRIPTION OF SYMBOLS 1 Dicing sheet 2 Adhesive layer 21 Peeling base material 3 Semiconductor wafer 4 Dicer table 5 Wafer ring 6 Blade 10 Film for semiconductor with dicing sheet function

Claims (11)

A dicing sheet and a semiconductor film with a dicing sheet function in which an adhesive layer is laminated,
A film for a semiconductor with a dicing sheet function, wherein the adhesive layer is composed of a resin composition containing a resin capable of crosslinking reaction and a compound having flux activity. 2. The semiconductor film with a dicing sheet function according to claim 1, wherein the functional surface of the flip chip type semiconductor element and the adhesive layer of the semiconductor film with a dicing sheet function are adhered to each other. When the adhesive layer of the semiconductor film with a dicing sheet function is heated from the normal temperature to a molten state at a temperature increase rate of 10 ° C./min, the initial melt viscosity decreases, and after reaching the minimum melt viscosity, Has the property of increasing, and the minimum melt viscosity is 10 Pa · s or more,
The film for semiconductor with a dicing sheet function according to claim 2, wherein the film is 10,000 Pa · s or less. The film for semiconductor with a dicing sheet function according to claim 1, wherein a release film is provided between the dicing sheet and the adhesive layer. The film for a semiconductor with a dicing sheet function according to claim 1, wherein the adhesive layer of the film for a semiconductor with a dicing sheet function has a transparency that allows a surface of the semiconductor element to be recognized. The film for semiconductor with a dicing sheet function according to claim 1, wherein the resin composition further contains a film-forming resin. The film for a semiconductor with a dicing sheet function according to claim 6, wherein the resin composition further contains a curing agent. The film for a semiconductor with a dicing sheet function according to claim 7, wherein the resin composition further contains an inorganic filler. The semiconductor film with a dicing sheet function according to claim 8, wherein an average particle diameter of the inorganic filler is 0.5 μm or less. The film for semiconductor with a dicing sheet function according to claim 1, wherein the compound having flux activity is a compound having at least one of a carboxyl group and a phenolic hydroxyl group. A semiconductor device comprising a cured product of the adhesive layer of the film for a semiconductor with a dicing sheet function according to claim 1.

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