JP2009200415A - Semiconductor device and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which exudation of resin is suppressed. <P>SOLUTION: The method for manufacturing the semiconductor device includes steps of: preparing an annular frame 110 and elements located in the frame 110 and to which wiring 112, 113 are connected; arranging an upper mold 210 so as to block an opening part to be regulated by one axial direction end surface of the frame 110 and to cover the wiring 112, 113 and elements; sandwiching the frame 110 by an upper mold 210 and a lower mold 211, press-fixing the upper mold 210 to one axial direction end surface to deform a first axial direction end surface, and press-fixing the lower mold 211 to the other axial direction end surface to deform a second axial direction end surface; and filling up the resin into an internal space to be defined by the upper mold 210, the lower mold 211 and the frame 110 to form a resin part which covers the wiring 112, 113 located inside the internal space and the top of the elements. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly to a semiconductor device sealed with a mold resin and a method for manufacturing a semiconductor device.

  Conventionally, various semiconductor devices have been proposed. For example, a semiconductor device described in Japanese Patent Application Laid-Open No. 2002-31744 includes a wiring board including a conductor serving as an external connection terminal, a resin frame formed on the wiring board, and an inner side of the resin frame. The integrated circuit element and the connection means that are formed, and a sealing resin that covers the integrated circuit element and the connection means are provided.

  Further, according to the method of manufacturing a semiconductor device described in Japanese Patent Application Laid-Open No. 2002-31744, first, input / output electrodes formed on an integrated circuit element and an external connection terminal are connected by wire bonding. Then, the inside of the resin frame is filled with a sealing resin using a molding die having an upper die, a lower die, a gate, and a runner.

  A mounting structure of a MOSFET (metal-oxide-semiconductor field-effect transistor) described in Japanese Patent Laid-Open No. 2002-76195 includes a plurality of electrically isolated conductive paths, and a gate electrode and a source on the desired conductive paths. A MOSFET chip having electrodes fixed thereto, a metal connection plate for connecting a drain electrode of the MOSFET chip to a desired conductive path, and an insulating resin that covers the MOSFET chip and integrally supports the conductive path are provided.

  In the method for manufacturing a MOSFET mounting structure described in Japanese Patent Application Laid-Open No. 2002-76195, after mounting a MOSFET chip on a conductive foil, an insulating resin is formed on the conductive foil.

  A semiconductor power module described in Japanese Patent Application Laid-Open No. 2006-179732 includes an insulating substrate in which high-purity Al or Al alloy is directly contacted and bonded to a ceramic substrate, an Si chip mounted via solder, and an insulating substrate And an epoxy resin formed to cover the Si chip.

In the method for manufacturing a semiconductor power module described in JP-A-2006-179732, an epoxy resin is formed by transfer molding.
JP 2002-31744 A JP 2002-76195 A JP 2006-179732 A

  However, in the method of manufacturing a semiconductor device described in Japanese Patent Application Laid-Open No. 2002-31744, when the sealing resin is filled inside the resin frame, the resin enters the gap between the resin frame and the mold, There is a risk of resin adhering to the surface of the external connection terminal.

  Furthermore, in the semiconductor device described in Japanese Patent Application Laid-Open No. 2002-31744, the resin frame and the sealing resin formed in the resin frame may be displaced from each other.

  In the method for manufacturing a MOSFET mounting structure described in Japanese Patent Application Laid-Open No. 2002-76195, when an epoxy resin is filled so as to cover the insulating substrate and the Si chip, the resin is placed between the mold and the charging foil. As described above, resin may be formed on the surface of the conductive foil up to the surface opposite to the Si chip mounting surface.

  In the method for manufacturing a semiconductor power module described in Japanese Patent Application Laid-Open No. 2006-179732, when forming an epoxy resin, the resin is inserted in a state where leads connected to the element are inserted into holes formed in a mold. Filled. However, the resin may enter the gap between the lead and the mold, and the resin may adhere to the surface of the lead protruding from the epoxy resin.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device in which the seepage of resin is suppressed.

  A second object of the present invention is to provide a frame and a semiconductor device in which the mold is filled with a mold resin, and a resin portion formed in the frame is displaced relative to the frame, The part can be prevented from falling off the frame.

  A manufacturing method of a semiconductor device according to the present invention includes a step of preparing an annular frame, wiring extending from an inner peripheral surface of the frame, an element located in the frame and connected to the wiring, Closing the opening defined by one of the axial end faces, placing the first mold so as to cover the wiring and the element, and closing the opening defined by the other axial end face of the frame And a step of disposing a second mold so as to cover the wiring and the element. Further, the first and second molds sandwich the frame, and the first mold is pressure-bonded to one axial end face to deform the first axial end face, and the second mold is attached to the other axis. The inner space defined by the step of deforming the second axial end surface by crimping to the direction end surface, the first and second molds, and the frame body is filled with resin, and is positioned in the inner space. Forming a resin part covering the wiring and the element.

  The semiconductor device according to the present invention includes an annular frame, a resin portion filled in the frame, an element embedded in the resin portion, an inner peripheral surface of the frame, connected to the element, And a resin portion that covers a part of one axial end surface of the frame that is located closer to the inner peripheral edge than the wiring. And a wiring first engaging portion that engages with a portion located on the inner peripheral side of the frame body relative to the drawer portion, and a second engaging portion that covers a part of the other axial end face of the frame body.

  According to the method for manufacturing a semiconductor device according to the present invention, in the process of manufacturing a semiconductor device in which a resin is filled in a frame and an element or the like arranged in the frame is covered with a resin portion, the resin is filled in the frame. In this case, the resin oozes out between the frame and the mold, and it is possible to prevent the resin from adhering to the portion of the wiring connected to the external wiring or the like. Can be suppressed.

  According to the semiconductor device of the present invention, in the semiconductor device in which the resin is filled in the frame and the elements and the like arranged in the frame are covered with the resin, the resin is relatively displaced with respect to the frame. Or the resin part can be prevented from falling off the frame.

  A semiconductor device and a method for manufacturing the semiconductor device according to the present invention will be described with reference to FIGS.

(Embodiment 1)
FIG. 1 is a cross-sectional view of a semiconductor device 100 according to the first embodiment of the present invention. As shown in FIG. 1, the semiconductor device 100 includes a frame body 110 formed in an annular shape, a mold resin portion 111 filled in the frame body 110, and a power embedded in the mold resin portion 111. The chip 117 is provided with a wiring 112 and a wiring 113 drawn from the inner peripheral surface of the frame 110. Here, the wiring 112 is drawn out from the lead-out part 114 located on the axial end face 122, and the wiring 113 is drawn out from the lead-out part 115 located on the axial end face 122.

  The frame 110, the wiring 112, and the wiring 113 are integrally formed by, for example, injection molding.

  The frame 110 includes an annular convex portion 130 formed on one axial end surface 122 and extending annularly, and an annular convex portion 131 formed on the other axial end surface 123 and extending annularly.

  The annular convex portion 130 is located between the inner peripheral edge portion and the outer peripheral edge portion of the axial end face 122, and the annular convex portion 131 is also located between the inner peripheral edge portion and the outer peripheral edge portion of the axial end face 123. is doing. In particular, the annular protrusion 130 is formed in a portion of the axial end surface 122 that is located on the inner peripheral edge side of the axial end surface 122 with respect to the extraction portion 114 and the extraction portion 115.

  The mold resin portion 111 includes an engagement portion 138 that covers a portion of the axial end surface 122 located on the inner peripheral edge side of the axial end surface 122 and the inner side surface 132 of the annular convex portion 130 with respect to the annular convex portion 130. Including. Furthermore, the mold resin portion 111 covers the portion located on the inner peripheral edge side of the axial end surface 123 and the inner side surface 135 of the annular convex portion 131 with respect to the annular convex portion 131 in the axial end surface 123. Part 139. Here, the engaging portion 138 engages with a portion of the axial end surface 122 located on the inner peripheral side of the axial end surface 122 with respect to the leading portion 114 of the wiring 112 and the leading portion 115 of the wiring 113. Yes. An annular recess 121 is formed on the peripheral surface of the mold resin portion 111, and the frame body 110 is fitted in the annular recess 121.

  Here, even if the mold resin portion 111 attempts to displace relative to the frame body 110 in the direction from the axial end surface 123 toward the axial end surface 122, the engaging portion 139 engages with the axial end surface 123. In addition, since the frame body 110 is fitted in the annular recess 121, the relative displacement between the mold resin portion 111 and the frame body 110 is suppressed. Similarly, when the mold resin portion 111 tries to displace relative to the frame body 110 in the direction from the axial end surface 122 toward the axial end surface 123, the engaging portion 138 engages with the axial end surface 122. Since the frame body 110 is fitted in the annular recess 121, the relative displacement between the mold resin portion 111 and the frame body 110 is suppressed. As described above, the mold resin portion 111 is suppressed from moving relative to the frame body 110 and the mold resin portion 111 is prevented from dropping from the frame body 110.

  Here, the width of the frame 110 is preferably about 1 mm or more and 2 mm or less, for example. This is because if the width of the frame body 110 is smaller than 1 mm, the rigidity of the frame body 110 is reduced, and when the resin described later is filled in the frame body 110, the frame body 110 may be greatly deformed by the pressing force from the mold. . Furthermore, when the width of the frame body 110 is larger than 2 mm, the semiconductor device 100 is prevented from being made compact. The width of the annular protrusion 130 is, for example, about 0.5 mm. And the width | variety of the part located in the inner peripheral part side of the axial direction end surface 122 is about 1 mm with respect to the cyclic | annular convex part 130 among the axial direction end surfaces 122, for example, from the width | variety of the cyclic | annular convex part 130. Is also getting bigger.

  Thereby, for example, when the mold resin part 111 and the frame 110 have different thermal expansion coefficients, and the temperature of the mold resin part 111 and the frame 110 rises, the engaging parts 138 and 139 are good with the frame 110. The engagement state between the mold resin part 111 and the frame body 110 can be maintained.

  Note that the frame 110 is made of a thermoplastic resin, and the mold resin portion 111 is made of a thermosetting resin.

  The wiring 112 is drawn into the frame 110 from the inner peripheral surface of the frame 110 and is embedded in the mold resin portion 111. An electrode 151 is connected to the end of the wiring 112 located in the mold resin portion 111. One end of the bonding wire 120 is connected to the electrode 151, and the other end of the bonding wire 120 is connected to the upper surface of the power chip 117.

  The wiring 112 is led out from the lead-out part 114 located on the outer peripheral edge side of the axial end face 122 with respect to the annular convex part 130 in the axial end face 122.

  The wiring 113 is drawn from the inner peripheral surface of the frame 110 and is connected to the bottom surface of the power chip 117 via the solder 116. Further, the wiring 113 is led out from a lead-out portion 115 located on the outer peripheral edge side with respect to the annular convex portion 130 in the axial end surface 122 of the frame body 110.

  An electrode 150 is connected to an end portion of the wiring 113 located in the frame 110. A power chip 117 is mounted on the upper surface of the electrode 150 via solder 116. The electrode 150 is closer to the other end surface 148 side than the one end surface 147 of the mold resin portion 111 positioned on the axial end surface 122 side from which the wirings 112 and 113 are drawn.

  A cooler 149 is attached to the end surface 148 of the mold resin portion 111. Thereby, the power chip 117 can be brought close to the cooler 149, and the power chip 117 can be cooled well.

  Of the surface of the electrode 150, a mold resin portion 111 is filled between the main surface located opposite to the main surface on which the power chip 117 is mounted and the cooler 149 to be mounted. For this reason, the heat transmitted from the power chip 117 to the electrode 150 via the solder 116 is favorably dissipated to the cooler 149 via the mold resin portion 111.

  The electrode 150 is, for example, a Cu plate plated with Ni. The thickness of the electrode 150 is about 0.5 mm or more and 1.0 mm or less, and heat from the power chip 117 is transmitted to the electrode 150 well, and heat is radiated from the electrode 150 to the mold resin portion 111 well. .

  The electrode 151 is, for example, a Cu plate with Ni plating. The electrode 151 only needs to have rigidity necessary for connecting the bonding wire 120 to the electrode 151, and the thickness of the electrode 151 is, for example, about 0.5 mm. Thus, the electrode 151 is formed to be thinner than the electrode 150.

  If the electrode 151 and the electrode 150 overlap each other in the thickness direction of the semiconductor device 100 (a direction from one of the axial end surface 122 and the axial end surface 123 to the other) by forming the electrode 150 thin, the semiconductor device 100 The thickness of the semiconductor device 100 can be reduced, and the semiconductor device 100 can be made compact.

  Furthermore, since both the wiring 112 and the wiring 113 are drawn out from the axial end face 122 and the cooler 149 is arranged on the axial end face 123 side, the cooler 149, the wiring 112 and the wiring 113 are connected to each other. A long creepage distance can be secured.

  If the creepage distance between the wiring 112 and the wiring 113 and the cooler 149 can be ensured, the semiconductor device 100 can be thinned and the semiconductor device 100 can be made compact.

  Further, by pulling out the wiring 112 and the wiring 113 from the end surface 122 in the axial direction of the frame body 110, the semiconductor device 100 can be made more compact than when the wiring 112 and the wiring 113 are pulled out from the peripheral surface of the frame body 110. Can do.

  A method for manufacturing the semiconductor device 100 according to the first embodiment will be described with reference to FIGS.

  FIG. 2 is a cross-sectional view showing the manufacturing process of the semiconductor device 100. As shown in FIG. 2, first, the power chip 117 mounted on the electrode 150 via the frame 110 provided with the wiring 112 and the wiring 113 and the solder 116 and connected to the electrode 151 by the bonding wire 120. Is formed. The mold 200 is used to fill the frame 110 of the unit 160 with resin to form the mold resin portion 111. The mold 200 includes an upper mold 210 and a lower mold 211, and a cavity 201 is defined therein. In the example shown in FIG. 2, a recess 206 is formed in the lower mold 211, and a bottom surface 209 of the recess 206 defines an end surface 148 of the mold resin portion 111 to be formed. The inner surface 207 of the recess 206 supports the outer surface 136 of the annular protrusion 131.

  Of the upper surface of the lower mold 211, the portion adjacent to the recess 206 is a flat support surface 208, and on the outer peripheral side with respect to the annular protrusion 131 of the axial end surface 123 of the frame 110. The part is a parting surface that supports the positioned portion and contacts the lower surface of the upper mold 210.

  The lower mold 211 is formed with a runner 221 reaching the recess 206 and a pot 220 communicating with the runner 221, and a plunger 222 is provided in the pot 220 so as to be slidable in the pot 220. Yes.

  The upper mold 210 is formed with a recess 205, and the recess 205 is formed with a recess 205 that accommodates the frame body 110, the wiring 112, and the wiring 113. The recess 205 is defined by the frame housing part 203, the wiring receiving part 202 and the wiring receiving part 204.

  The inner peripheral surface of the frame body accommodating portion 203 is formed so as to imitate the outer peripheral surface of the frame body 110 and can receive the frame body 110. Further, the wiring receiving portion 202 can receive a portion of the wiring 112 that protrudes from the axial end surface 122 of the frame 110, and the wiring receiving portion 204 of the wiring 113 protrudes from the axial end surface 122. The part to be accepted is accepted.

  Then, when the unit 160 is disposed in the cavity 201, the lower mold 211 closes the opening defined by the axial end surface 123 of the frame 110, and the power chip 117 positioned in the frame 110, The wiring 112 and the wiring 113 are located so as to cover a portion located in the frame 110.

  Further, the upper mold 210 closes the opening defined by the axial end surface 122 of the mold resin portion 111 and, among the power chip 117 located in the frame 110, the wiring 112 and the wiring 113, the frame 110 is located so as to cover a portion located within 110. The frame 110 is located in the frame housing portion 203, and the portions of the wiring 112 and the wiring 113 that protrude from the axial end surface 122 of the frame 110 are accommodated in the wiring receiving portion 202 and the wiring receiving portion 204. Is done.

  FIG. 3 is a cross-sectional view showing the annular convex portion 130 and the vicinity thereof when the unit 160 is accommodated in the mold 200. In the state shown in FIG. 3, the upper mold 210 and the lower mold 211 are slightly separated from each other. As shown in FIG. 3, the upper portion of the recess 205 has a flat surface-like upper surface 224, an inclined surface 226 that is positioned on the outer peripheral edge of the upper surface 224, and extends annularly, and an upper surface 224 with respect to the inclined surface 226. Is defined by a wiring receiving unit 202 and a wiring receiving unit 204 located on the opposite side.

  As shown in FIG. 3, when the upper mold 210 and the lower mold 211 are close to each other, the distance between the inclined surface 226 of the annular convex portion 225 and the inclined surface 226 of the annular convex portion 130 is reduced.

  At this time, the distance between the apex part 134 of the annular convex part 130 and the concave part 205 is smaller than the separation distance between the upper mold 210 and the lower mold 211.

  FIG. 4 is a cross-sectional view showing the state of the annular protrusion 130 and the vicinity thereof when the upper mold 210 and the lower mold 211 are in contact with each other and the cavity 201 is defined.

  As shown in FIG. 4, when the upper mold 210 and the lower mold 211 come into contact with each other, the upper surface 224 of the upper mold 210 comes into contact with the apex part 134 of the annular convex portion 130, and The convex portion 130 is crimped. In the example shown in FIG. 4, the apex portion 134 of the annular convex portion 130 is plastically deformed by being pressed by the upper surface 224. Here, by using a thermoplastic resin as the material of the frame 110, the plastic deformation as described above is possible, and due to the deformation of the apex portion of the annular convex portion 130, the close contact with the upper mold 210 is prevented. It is definitely obtained.

  Thereby, even if the flatness of the upper surface 224 of the upper mold 210 is about several μm to several hundred μm, the annular convex portion 130 is deformed, and the upper end portion of the entire circumference of the annular convex portion 130 and the upper The upper surface 224 of the mold 210 is closely attached (crimped) without a gap. Further, the inclined surface 226 of the annular convex portion 225 and the outer surface 133 of the annular convex portion 130 are in close contact with each other.

  Further, the annular convex portion 131 formed on the axial end surface 123 of the frame body 110 is also brought into contact with the bottom surface 209 of the lower mold 211 and deformed. As a result, even if the flatness of the bottom surface 209 of the lower mold 211 is about several μm or more to several hundred μm, the apex portion 134 of the annular protrusion 131 is plastically deformed, so that The upper end of the annular convex 131 and the bottom 209 are in close contact with each other over the circumference. Here, by using a thermoplastic resin as the material of the frame body 110, the plastic deformation as described above is possible, and due to the deformation of the apex portion of the annular convex portion 131, the close contact with the lower mold 211 is prevented. In addition, the inner surface 207 of the lower mold 211 and the outer peripheral surface of the annular protrusion 131 are in close contact with each other.

  As described above, before filling the resin into the cavity 201, the upper mold 210 and the lower mold 211 sandwich the outer peripheral edge of the frame body 110 in advance, and the upper mold 210 is attached to the frame 110. The axial end surface 122 is plastically deformed, and the lower mold 211 plastically deforms the axial end surface 123 of the frame 110. The axial end surface 122 and the upper mold 210 are brought into close contact with each other over the entire circumference of the axial end surface 122, and the axial end surface 123 and the lower mold 211 are connected in the circumferential direction of the axial end surface 123. It adheres over the whole circumference.

  Thereafter, the resin is supplied into the cavity 201. When the resin is filled, the mold 200 is heated to about 180 degrees, for example, and the resin tablet 223 is melted. Then, the plunger 222 presses the resin tablet 223, and the molten resin passes through the runner 221 and fills the space defined by the upper mold 210, the lower mold 211, and the frame body 110. The resin is cured to form the mold resin portion 111, and the semiconductor device 100 is manufactured.

  As the resin tablet 223, for example, a thermosetting resin such as an epoxy resin is employed. The frame 110 is made of a thermoplastic resin having a melting temperature higher than the temperature at which the resin tablet 223 is thermoset. Thereby, it can suppress that the frame 110 melt | dissolves, when resin is filled. Note that the reaction curing temperature of a normal thermosetting resin is 180 ° C.

  Here, when the resin is filled in the space defined by the upper mold 210, the lower mold 211, and the frame body 110, the upper mold 210 and the annular protrusion 130 are disposed on the entire circumference of the annular protrusion 130. Since the lower mold 211 and the annular protrusion 131 are in close contact with each other over the entire circumference of the annular protrusion 131, the filled resin is placed between the upper mold 210 and the frame 110. And it can suppress that it exudes from between the lower metal mold | die 211 and the frame 110. FIG.

  Furthermore, the outer surface 133 of the annular protrusion 130 and the inclined surface 226 of the annular protrusion 225 are in close contact with each other, and the outer surface of the annular protrusion 131 and the inner surface 207 of the lower mold 211 are in close contact with each other. Furthermore, it is possible to suppress the seepage of the resin.

  In addition, since the outer surface 133 of the annular protrusion 130 and the inclined surface 226 of the annular protrusion 225 are in close contact with each other, the path length until the resin reaches the outer side from the annular protrusion 130 becomes longer, and the resin becomes annular protrusion. Reaching outside the portion 130 can be suppressed. In addition, since the outer surface of the annular protrusion 131 and the inner surface 207 are in close contact with each other, the path length until the resin in the cavity 201 reaches the outer side from the annular protrusion 131 is increased, and the resin becomes the annular protrusion 131. It can suppress oozing out more outside.

  As described above, since the leakage of the resin can be suppressed, it is possible to suppress the resin from adhering to a portion of the wiring 112 or the wiring 113 that protrudes from the axial end surface 122 of the frame 110. it can. Furthermore, it can suppress that the resin which exuded hardens | cures and a burr | flash is formed.

  The upper mold 210 is pressure-bonded to the frame 110 so that the plastic deformation portion of the axial end surface 122 of the frame 110 is annular, and the plastic deformation portion of the axial end surface 123 of the frame 110 is annular. Even if the flatness of the upper surface 224 and the concave portion 206 of the mold 200 is about several hundreds μm by pressing the lower mold 211 to the frame body 110, the resin is oozed out in the step of filling the resin. Can be suppressed.

  For this reason, it is not necessary to use the mold 200 having excellent flatness, and the manufacturing cost of the mold 200 and the molding time for molding the mold 200 can be reduced.

  Here, as a method for manufacturing a semiconductor device, a step of preparing a frame that includes a portion on which a chip is to be mounted, a portion that is to be a lead, and an annular frame portion; The step of placing the lower mold in the parting plane, the step of filling the resin after sandwiching the frame portion between the upper mold and the lower mold, and the step of removing the frame portion of the frame The manufacturing method provided can be considered (the manufacturing method of a comparative example).

  In the manufacturing method of this comparative example, the frame of the frame is necessary as a part to be sandwiched between molds in order to suppress the leakage of the resin, and thereafter is a part to be removed and discarded. The usage rate is about 50% of the raw material roll material. On the other hand, in the method of manufacturing a semiconductor device according to the present embodiment, after mounting on the frame 110, it is not necessary to discard a part of the wirings 112 and 113, and 80% of the rolling roll material that is a raw material. The above usage efficiency can be achieved. Further, wirings having different thicknesses can be selected as the wiring 112 and the wiring 113.

(Embodiment 2)
A semiconductor device and a method for manufacturing the semiconductor device according to the second embodiment of the present invention will be described with reference to FIGS. In addition, about the same structure as the structure shown by the said FIGS. 1-4, the same code | symbol may be attached | subjected and the description may be abbreviate | omitted.

  FIG. 5 is a cross-sectional view of the semiconductor device 100 according to the second embodiment of the present invention. As shown in FIG. 5, the semiconductor device 100 includes a frame body 110 formed in an annular shape, a mold resin portion 111 filled in the frame body 110, and a power chip 117 embedded in the mold resin portion 111. And.

  The frame body 110 includes an outer frame body 118 formed in an annular shape and an annular projecting portion 142 projecting from the inner peripheral surface of the outer frame body 118.

  Therefore, the axial end surface 122 of the frame 110 is defined by the inner diameter end surface 124 of the protrusion 142 and the outer diameter end surface 125 of the outer frame 118, and the axial end surface 123 of the frame 110 is the protrusion 142 is defined by the inner diameter end surface 126 of 142 and the outer diameter end surface 127 of the outer frame 118.

  The protrusion 142 includes an annular groove 144 extending in the circumferential direction at a portion of the inner diameter end surface 124 located between the inner peripheral edge of the protrusion 142 and the outer frame 118. Furthermore, the protrusion 142 includes an annular groove 143 extending in the circumferential direction at a portion of the inner diameter end face 126 located between the inner peripheral edge of the protrusion 142 and the outer frame 118. For this reason, the protruding portion 142 includes a base portion 141 protruding from the inner peripheral surface of the outer frame body 118 and an overhang portion 140 positioned on the inner peripheral side of the base portion 141 via the groove portion 144 and the groove portion 143. .

  The mold resin portion 111 projects to both end surfaces of the projecting portion 140 in the axial direction, and the mold resin portion 111 and the frame 110 are engaged with each other. An annular recess 121 extending in an annular shape is formed on the outer peripheral surface of the mold resin portion 111, and the projecting portion 140 is fitted into the annular recess 121.

  Here, a method for manufacturing the semiconductor device 100 according to the second embodiment of the present invention will be described with reference to FIGS.

  FIG. 6 is a cross-sectional view showing the manufacturing process of the semiconductor device according to the second embodiment. As shown in FIG. 6, the unit 161 in which no mold resin is formed is placed in the mold 200.

  The unit 161 includes an annular frame 110 including an outer frame 118 and a protruding portion 142, wirings 112 and 113 drawn from the axial end surface 122 of the frame 110, and a power chip disposed in the frame 110. 117.

  The wiring 112 is drawn from the inner peripheral surface of the frame 110, and a flat surface electrode 150 is connected to the end of the wiring 113 in the frame 110. A power chip 117 is mounted via the solder 116.

  A flat electrode 151 is connected to an end of the wiring body 112 in the frame 110, and the electrode 151 and the power chip 117 are connected by a bonding wire 120.

  The mold 200 includes a lower mold 211 and an upper mold 210. The lower mold 211 is formed with an insertion portion 236 extending in an annular shape. Of the upper surface of the lower mold 211, a flat portion that functions as a parting surface that supports the axial end surface 123 of the frame 110 and supports the bottom surface of the upper mold 210 on the outer peripheral side with respect to the insertion portion 236. 238 is formed.

  The insertion portion 236 protrudes upward from the upper surface of the lower mold 211, and includes a base portion 235 capable of supporting the protrusion portion 142 of the frame body 110, and a protrusion portion 234 protruding upward from the base portion 235. I have. Both the base 235 and the protrusion 234 extend in an annular shape.

  An insertion portion 233 that extends in an annular shape is formed at the bottom of the recess 205 that defines the cavity 201 on the surface of the upper mold 210. Out of the inner peripheral surface of the recess 205, a wiring receiving portion 202 that can receive the wiring 112 and a wiring receiving portion 204 that can receive the wiring 113 are formed outside the insertion portion 233.

  FIG. 7 is a cross-sectional view showing a state of the insertion portion 233 and the vicinity thereof when the unit 161 is accommodated in the mold 200. In the state shown in FIG. 7, the upper mold 210 and the lower mold 211 are slightly separated from each other.

  FIG. 8 is a cross-sectional view showing a state of the insertion portion 233 and the vicinity thereof when the upper mold 210 and the lower mold 211 are in contact with each other and the cavity 201 is defined.

  As shown in FIGS. 7 and 8, as the upper mold 210 and the lower mold 211 approach each other, the protrusion 231 of the insertion portion 233 approaches the protrusion 142.

  When the upper mold 210 and the lower mold 211 come into contact with each other, as shown in FIG. 8, the projecting portion 231 comes into contact with the inner diameter end surface 126 of the projecting portion 142, and further into the projecting portion 142. Get in. As a result, an annular groove 144 is formed on the inner diameter end surface 126.

  In this manner, the protrusion 231 plastically deforms the protrusion 142 so that the protrusion 231 enters the protrusion 142, and the protrusion 142 and the inner surface of the groove 144 are in close contact with each other or pressed. In addition, both the protrusion part 231 and the groove part 144 are formed in the cyclic | annular form, and the mutual adhesion part is also extended cyclically | annularly.

  Similarly, the protruding portion 234 of the insertion portion 236 also enters the protruding portion 142 to form an annular groove portion 143. Thereby, the projection part 234 and the inner surface of the groove part 143 mutually adhere and press-fit.

  As described above, after the protruding portion 231 and the protruding portion 234 are inserted into the protruding portion 142, the cavity 201 is filled with resin. Here, since the protruding portion 231 and the protruding portion 234 are in close contact with the inner surfaces of the groove portion 144 and the groove portion 143, the filled resin is between the protruding portion 231 and the groove portion 144 and between the protruding portion 234 and the groove portion 143. It is possible to suppress entry into the wiring receiving unit 202 and the wiring receiving unit 204 through the gap. Furthermore, in order for the resin in the cavity 201 to reach the inside of the wire receiving portion 204 or the wire receiving portion 202, the space between the inner surface of the groove portion 144 and the protruding portion 231, the inner peripheral surface of the outer frame 118, and the base portion 230. It is necessary to pass between the outer peripheral surfaces, and the resin seepage path is long.

  Thereby, it can suppress that resin adheres to the part pulled out from the axial direction end surface 122 of the frame 110 among the wiring 112 and the wiring 113. FIG. Furthermore, generation | occurrence | production of the burr | flash formed when resin oozes out can be suppressed.

(Embodiment 3)
A method for manufacturing the semiconductor device according to the third embodiment will be described with reference to FIG. In FIG. 9, the same components as those shown in FIGS. 1 to 8 are given the same reference numerals, and the description thereof may be omitted.

  FIG. 9 is a cross-sectional view showing a configuration in the vicinity of the cavity 201, the runner 221 and the pot 220 when the unit is accommodated in the cavity 201. In FIG. 9, the upper mold 210 and the lower mold 211 are in contact with each other, and the cavity 201 is defined.

The upper mold 210 is formed with a projecting portion 260 that extends in an annular shape, and the projecting portion 260 enters the axial end surface 122 of the frame 110 by the upper mold 210 and the lower mold 211 coming into contact with each other. An annular groove portion 261 is formed. Similarly, the lower mold 211 is also formed with a projecting portion extending in an annular shape except for a portion where the opening 255 of the runner 221 is located.
It enters into the axial end surface 123 of the frame 110.

  For this reason, the close contact portion where the upper mold 210 and the frame 110 are in close contact with each other extends in an annular shape on the axial end surface 122, and the close contact portion where the lower mold 211 and the frame 110 are in close contact with each other On the axial end surface 123, it extends annularly. A gate portion 265 is formed by the notch 250 formed in the frame 110 and the end of the runner 221 on the cavity 201 side.

  FIG. 10 is a cross-sectional view showing the configuration of the gate portion 265 and its vicinity. As shown in FIG. 10, the gate portion 265 is defined by a notch portion 250 formed in the frame body 110 and an inner surface of the lower mold 211 that defines the runner 221.

  The notch 250 extends from a portion of the axial end face 123 located between the outer peripheral edge and the inner peripheral edge of the frame 110 to the inner peripheral edge of the frame 110. And the inner surface of the notch part 250 is curving so that it may go to the axial direction end surface 122 side of the frame 110 as it goes to the outer peripheral part side from the inner peripheral part side of the frame 110. Thereby, the recessed part 252 is formed in the notch part 250 at the outer peripheral edge part side. A taper portion 267 is formed so as to be inclined toward the lower mold 211 as it goes from the recess 252 toward the inner peripheral edge of the frame 110.

  Here, the gate portion 265 communicates with the expansion portion 268 defined by the concave portion 252 of the notch portion 250, the taper portion 267, the bottom portion 262 of the runner 221 and the taper surface 263, and the expansion portion 268. And an outlet 251 formed on the inner peripheral edge side of the axial end surface 123. The height of the expansion portion 268 (the length in the direction from the axial end surface 123 toward the axial end surface 122) is higher than the height of the discharge port 251, and the flow area of the resin in the expansion portion 268 is the resin flow in the discharge port 251. It is larger than the distribution area.

  Here, the flow area of the resin in the gate portion 265, the expansion portion 268, and the discharge port 251 is a cross-sectional area in a cross section perpendicular to the extending direction of each of the gate portion 265, the expansion portion 268, and the discharge port 251. .

  Then, when the resin is supplied into the cavity 201 by the transfer molding method, the resin flows through the runner 221 and reaches the gate portion 265. Since the resin distribution area in the gate portion 265 is larger than the resin distribution area in the runner 221, the resin distribution speed is temporarily reduced.

  Thereby, the kinetic energy of resin becomes small and it is suppressed that the temperature of resin becomes high. For this reason, before being supplied into the cavity 201, the temperature of the resin is suppressed from increasing, and the resin is suppressed from thermosetting.

  Thereafter, when the resin flows through the discharge port 251, the resin flow area is smaller than that of the gate portion 265, so that the resin flow rate through the discharge port 251 increases and the kinetic energy of the resin increases. As a result, the temperature of the resin in the cavity 201 can be increased, and the resin can be accelerated in the cavity 201 by thermosetting.

  Here, the notch portion 250 defining the gate portion 265 is formed by the frame body 110, and the frame body 110 is arranged such that a different frame body 110 is arranged every time the cavity 201 is filled with resin. For this reason, whenever it fills with resin, it can be filled with the gate part 265 prescribed | regulated by the new frame 110, and the acceleration | stimulation effect of the thermosetting of the resin in the cavity 201 can be acquired.

  For example, when the gate part 265 is defined by the upper mold 210 and the lower mold 211, the upper mold 210 is worn out each time resin filling is repeated. In the present embodiment, Such wear of the upper mold 210 is not a problem.

  Further, when the resin flows through the gate portion 265, the resin presses the surface of the frame 110 that defines the gate portion 265. Thereby, the frame 110 adheres to the inner surface of the upper mold 210, and the adhesion between the frame 110 and the upper mold 210 increases.

  Accordingly, it is possible to prevent the resin filled in the cavity 201 from entering between the upper mold 210 and the frame 110. In particular, since frame 110 is pressed in the direction of arrow A in FIG. 10, the resin can be prevented from entering between the outer peripheral surface of frame 110 and the inner peripheral surface of frame 110. . Thereby, it can suppress that the burr | flash of resin arises. Further, it is possible to suppress the resin from adhering to the surface of the wiring protruding from the axial end surface 122 of the frame 110.

(Embodiment 4)
A semiconductor device according to the fourth embodiment will be described with reference to FIGS. In the configuration shown in FIGS. 11 and 12, the same components as those shown in FIGS. 1 to 10 may be given the same reference numerals and explanation thereof may be omitted.

  FIG. 11 is a cross-sectional view of a semiconductor device according to Embodiment 4 of the present invention. As shown in FIG. 11, an electrode 151 is connected to the upper surface of the power chip 117 via solder 119, and the electrode 151 is connected to the wiring 112. An electrode 150 is connected to the lower surface of the power chip 117 via solder 116, and the electrode 150 is connected to the wiring 113.

  Here, in the process of manufacturing the semiconductor device 100, first, the wiring 112, the wiring 113, and the frame 110 are integrally formed by an injection molding method. At this time, the wiring 112 and the wiring 113 can employ wirings having different thicknesses.

  For example, the electrode 150 employs a metal plate having a predetermined thickness in order to absorb the heat from the power chip 117 satisfactorily and to dissipate heat to the mold resin portion 111. On the other hand, for the electrode 151, a metal plate having rigidity necessary for soldering to the upper surface of the power chip 117 may be employed, and the thickness of the electrode 151 can be made thinner than the thickness of the electrode 150.

  When the power chip 117 is mounted on the upper surface of the electrode 150, the electrode 151 connected to the end portion of the wiring 112 is bent so as to bend from the end portion of the wiring 112 toward the axial end surface 122, for example. It has been. Then, the power chip 117 is mounted on the upper surface of the electrode 150. Thereafter, the electrode 151 is bent along the upper surface of the power chip 117, and connected with solder 119.

  Here, by reducing the thickness of the electrode 151, the distance from the electrode 151 located on the upper surface of the power chip 117 to the electrode 150 located on the lower surface of the power chip 117 can be reduced. The thickness can be reduced.

  Also in the example shown in FIG. 11, similarly to the semiconductor device according to the first embodiment, the annular protrusion 130 and the annular protrusion 131 are formed on the axial end surface 122 and the axial end surface 123 of the frame 110. Is formed. For this reason, it is possible to suppress the resin from adhering to the wiring 112 and the wiring 113 protruding from the frame 110 in the step of forming the mold resin portion 111.

  FIG. 12 is a cross-sectional view showing a modification of the semiconductor device shown in FIG. Also in the example shown in FIG. 12, the electrode 151 is connected to the upper surface of the power chip 117 via the solder 119, and the electrode 150 is connected to the lower surface of the power chip 117 via the solder 116. Also in the example shown in FIG. 12, the thickness of the wiring 112 is formed thinner than the wiring 113 as in the example shown in FIG. Therefore, the distance between the electrode 151 located on the upper surface of the power chip 117 and the electrode 150 located under the power chip 117 can be reduced, and the semiconductor device 100 can be thinned.

(Embodiment 5)
A semiconductor device 300 and a method for manufacturing the same according to the fifth embodiment of the present invention will be described with reference to FIGS.

  FIG. 13 is a perspective view of a semiconductor device 300 according to the fifth embodiment of the present invention. As shown in FIG. 13, the semiconductor device 300 is formed on the frame 310, the mold resin 311 filled in the frame 310, the wiring 312 protruding from the upper surface of the frame 310, and the frame 310. Wirings 313 </ b> A to 313 </ b> C that bend along the upper surface of the base part 370 are provided.

  FIG. 14 is a cross-sectional view of the semiconductor device 300. As shown in FIG. 14, the semiconductor device 300 includes a cylindrical frame 310, a mold resin 311 filled in the frame 310, and an insulating plate 330 disposed on the lower surface 332 side of the semiconductor device 300. , And an electrode 314 disposed on the upper surface of the insulating plate 330.

  Further, the semiconductor device 300 is disposed on the upper surface of the power chip 317 and the power chip 318 which are mounted on the upper surface of the electrode 314 with a space therebetween, and is disposed on the upper surface of the power chip 317 and the power chip 318 via the solder 380 and the solder 381. The power chip 317 and the electrode 315A connected to the power chip 318 and the wiring 316A connected to the power chip 317 via the bonding wire 320 are provided.

  The wiring 316 </ b> A is drawn out from the inner peripheral surface of the frame 310 into the frame 310 and includes a wire bond electrode 333 provided at an end on the frame 310 side. The wiring 316A passes through the frame 310 and is drawn from the end surface of the frame 310 on the upper surface 331 side. An external wiring (not shown) is connected to a portion of the wiring 316A that protrudes from the frame 310.

  The wiring 313 </ b> A includes an upper wiring 334 that extends along the upper surface of the base part 370, and an internal wiring 335 that is connected to the end of the upper wiring 334, passes through the base part 370, and reaches the lower surface of the base part 370. An electrode 315A is connected to the end of the internal wiring 335.

  Here, in the wiring 313A, the upper wiring 334 located on the base portion 370 has a through hole formed in a portion corresponding to the screw hole of the nut embedded in the base portion 370. The wiring 313A is fixed together with an external wiring (not shown) by a fastening member such as a bolt (not shown).

  The connection position between the wiring 313A and the external wiring is located on the upper surface 331 of the semiconductor device 100, and the connection position between the wiring 316A and the external wiring is also located above the frame 310. Thus, the wirings 313A and 316A do not extend so as to protrude from the peripheral surface of the frame 310 with respect to the frame 310, and further, external wiring can be arranged on the upper surface 331 of the semiconductor device 100. The semiconductor device 100 is made compact.

  A through hole 351A is formed in a portion of the electrode 315A located above the power chip 318, and a through hole 352A is also formed in a portion located above the power chip 317.

  The solder 380 fills the through hole 352A and reaches the power chip 317 from the electrode 315A. The solder 381 fills the through hole 351A and reaches the power chip 318 from the electrode 315A.

  FIG. 15 is a perspective view of the unit 300 </ b> A in a state before being filled with the mold resin 311. Further, FIG. 16 is a perspective view showing the wirings 313A to 313C, the electrodes 315A to 315C, the electrodes 314 and 324, the wirings 316A and 316B, etc. before being filled with the mold resin 311.

  Here, in order to configure the unit 300A shown in FIGS. 15 and 16, first, the power chip 317 and the power chip 318 are arranged on the electrode 314 at an interval, and the power chip 328 is formed on the power chip 327. And the power chip 327 is mounted at an interval.

  On the other hand, a frame 310 into which the wirings 313A to 313C and the wirings 316A and 316B are fitted is formed. Here, the wiring 313A includes a power chip 318 and an electrode 315A disposed on the power chip 317. The wiring 313B includes a connection portion 329B located on the electrode 314 and an electrode 315B located on the power chip 328 and the power chip 327. The wiring 313C includes a connection portion 329C extending on the electrode 324.

  Then, the frame 310 in which the wirings 313A to 313C and the wirings 316A and 316B are fitted is disposed on the electrodes 314 and 324 on which the power chips 317 to 318 are mounted.

  Solder is filled from the through holes 351A and 352A formed in the electrode 315A, and the electrode 315A and the power chips 318 and 317 are connected. Further, the through hole 353B formed in the connecting portion 329B is filled with solder to connect the wiring 313B and the electrode 314, and the through hole 353 of the connecting portion 329C is filled with solder, The wiring 313C is connected.

  Further, the through holes 351B and 352B formed in the electrode 315B are filled with solder, and the electrode 315B and the power chips 327 and 328 are connected. The wirings 316A and 316B and the power chips 317 and 327 are connected by the bonding wire 320.

  In this way, the unit 300A is configured. Thereafter, the mold resin 311 is filled into the frame 310.

  Here, as shown in FIG. 15, an annular projection 375 extending along the opening edge of the opening 376 of the frame 310 is formed on the upper surface of the frame 310 before filling with the mold resin 311. Has been. Furthermore, an annular protrusion that extends along the opening on the lower surface side of the frame 310 is also formed on the lower surface of the frame 310. The wirings 313A to 313C and the wirings 316A and 316B extend so as to protrude upward from the upper surface of the frame 310, and are positioned on the outer peripheral surface side of the frame 310 with respect to the annular protrusion 375.

  Then, when the mold resin 311 is filled in the frame 310, the unit 100A is disposed in the cavity of the mold. The upper mold has recesses that can receive the wires 313A to 313C and recesses that can receive the wires 316A and 316B, and the wires 313A to 313C and the wires 316A and 316B are accommodated in the recesses. .

  Then, the annular protrusion 375 of the frame 310 is pressed by the upper mold and plastically deformed. Here, the upper mold is in close contact with the entire circumference of the annular protrusion 375, and the close contact between the frame 310 and the upper mold extends in an annular shape along the periphery of the opening 376. Further, after the unit 100A is disposed in the cavity, the annular protrusion formed on the lower surface side of the frame 310 is pressed by the lower mold and plastically deformed. Here, the lower die is crimped over the entire circumference of the annular protrusion, and the crimped portion between the lower die and the frame 310 extends annularly along an opening located on the lower surface side of the frame 310. .

  Thus, the mold resin is filled in the frame 310 in a state where the upper mold and the lower mold are sandwiched between the frame 310 and the upper mold, the lower mold, and the frame 310 are in close contact with each other. To do. Thereby, it can suppress that resin oozes out from the filling space prescribed | regulated by the frame 310, an upper metal mold | die, and a lower metal mold | die. Thereby, it can suppress that resin adheres to the part which protrudes from the upper surface of the frame 310 among wiring 316A, 316B and wiring 313A-313C. Furthermore, generation | occurrence | production of the burr | flash formed when resin oozes out can be suppressed. Furthermore, by making the thickness of the power chip 317 and the power chip 327 thinner than the thickness of the electrode 314 and the electrode 324, the thickness of the semiconductor device 300 can be reduced.

  Although the embodiments of the present invention have been described as above, the embodiments disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The present invention is suitable for a semiconductor device and a method for manufacturing the semiconductor device.

It is sectional drawing of the semiconductor device which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing process of a semiconductor device. It is sectional drawing which shows the state of the cyclic | annular convex part when the unit is accommodated in the metal mold | die, and its vicinity. It is sectional drawing which shows the state of an annular convex part and its vicinity when an upper metal mold | die and a lower metal mold | die contact | abut mutually, and the cavity was prescribed | regulated. It is sectional drawing of the semiconductor device which concerns on Embodiment 2 of this invention. It is sectional drawing which shows the manufacturing process of the semiconductor device which concerns on this Embodiment 2. FIG. It is sectional drawing which shows the state of the insertion part when the unit is accommodated in the metal mold | die, and its vicinity. It is sectional drawing which shows the state of an insertion part and its vicinity when an upper metal mold | die and a lower metal mold | die contact | abut mutually, and the cavity was prescribed | regulated. It is sectional drawing which shows the structure of the vicinity of a cavity, a runner, and a pot, when a unit is accommodated in a cavity. It is sectional drawing which shows the structure of a gate part and its vicinity. It is sectional drawing of the semiconductor device which concerns on Embodiment 4 of this invention. FIG. 12 is a cross-sectional view showing a modification of the semiconductor device shown in FIG. 11. It is a perspective view of the semiconductor device which concerns on Embodiment 5 of this invention. It is sectional drawing of a semiconductor device. It is a perspective view of the unit in the state before filling mold resin. It is a perspective view which shows the wiring, an electrode, an electrode, wiring, etc. before filling with mold resin.

Explanation of symbols

  100, 300 Semiconductor device, 110 Frame, 111 Mold resin part, 112, 113 Wiring, 114, 115 Lead part, 117 Power chip, 130, 131 Annular convex part, 138, 139 Engagement part, 140 Overhang part, 141 Base, 142 Protruding part, 200 mold, 201 cavity, 202, 204 Wiring receiving part, 203 frame housing part, 210 upper mold, 211 lower mold, 220 pot, 221 runner, 222 plunger, 223 resin tablet.

Claims (8)

Preparing an annular frame, wiring extending from the inner peripheral surface of the frame, and an element located in the frame and connected to the wiring;
Closing the opening defined by the one axial end face of the frame and disposing the first mold so as to cover the wiring and the element;
Closing the opening defined by the other axial end face of the frame, and disposing a second mold so as to cover the wiring and the element;
The first and second molds sandwich the frame, and the first mold is crimped to the one axial end face to deform the first axial end face, and the second mold Crimping to the other axial end surface to deform the second axial end surface;
Filling a resin into an internal space defined by the first and second molds and the frame, and forming a resin portion covering the wiring and the element located in the internal space; ,
A method for manufacturing a semiconductor device, comprising: The wiring is drawn out from a lead-out portion on the one axial end face,
The step of the first and second molds sandwiching the frame body, wherein the first mold deforms a portion of the one axial end face located inside the lead-out portion of the wiring. Item 14. A method for manufacturing a semiconductor device according to Item 1. The frame body includes an annular first protrusion formed on a portion of the one axial end face located between an inner peripheral edge of the one axial end face and the drawer, and the other end face. An annular second protrusion formed on the axial end surface,
In the step of the first and second molds sandwiching the frame body, the first mold deforms the first projecting part over the entire circumference, and the second mold serves as the second projecting part. The method of manufacturing a semiconductor device according to claim 2, wherein the semiconductor device is deformed over the entire circumference. The first mold includes a first annular convex portion extending in an annular shape, and the second mold includes a second annular convex portion extending in an annular shape,
In the step in which the first and second molds clamp the frame, the first annular convex portion includes an inner peripheral edge of the one axial end surface of the one axial end surface of the frame. The portion positioned between the lead-out portion is deformed to form a first groove portion, and the second annular convex portion is deformed on the other axial end surface of the frame body to form a second groove portion. The method for manufacturing a semiconductor device according to claim 2, wherein the semiconductor device is formed. A discharge port for discharging the resin is formed in the second mold,
The frame is formed with a notch that reaches the inner peripheral edge from a portion located on the inner peripheral edge side of the other axial end face of the other axial end face,
Of the inner peripheral surface of the frame body that defines the notch, a portion located closer to the outer peripheral edge than the inner peripheral edge is closer to the one end than a portion located in the inner peripheral edge. Is recessed and
5. The method according to claim 1, further comprising a step of defining the gate portion by arranging the frame body in the second mold such that the cutout portion is positioned at the discharge port. A method for manufacturing a semiconductor device.   The method of manufacturing a semiconductor device according to claim 1, wherein the frame is formed from a thermoplastic resin, and the resin portion is formed from a thermosetting resin. An annular frame;
A resin portion filled in the frame;
An element embedded in the resin part;
A wire drawn from the inner peripheral surface of the frame, and drawn from a drawer portion of one axial end surface of the frame;
With
The resin portion covers a part of the one axial end surface of the frame body that is located closer to the inner peripheral edge side than the wiring, and is positioned closer to the inner peripheral side of the frame body than the lead-out portion. A semiconductor device comprising: the wiring first engaging portion that engages with a portion; and a second engaging portion that covers a part of the other axial end surface of the frame.   The wiring includes a first wiring connected to the terminal and a second wiring connected to the element and having a thickness smaller than that of the first wiring, and at least one of the first wiring and the second wiring. The semiconductor device according to claim 7, wherein the portions overlap each other in a direction from one axial end face of the frame toward the other axial end face.

Images