JP2009289807A - Method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device can prevent etching to a base (N+), and form a film at a relatively high film formation rate. <P>SOLUTION: This method for manufacturing of a semiconductor device includes: a first step of carrying a silicon substrate into a processing chamber; a second step of supplying at least a first silane-based gas and a first etching gas into the processing chamber while heating the silicon substrate; and a third step of supplying at least a second silane-based gas and a second etching gas into the processing chamber while heating the silicon substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

The present invention prevents the etching to the base (N +) by using different film formation gas and etching gas for the first layer and the second layer in the film formation on the substrate surface, and relatively high film formation. The present invention relates to a method for manufacturing a semiconductor device capable of forming a film at a rate.

In the manufacture of semiconductor devices, when growing the film such as a silicon or silicon germanium on a silicon substrate, conventionally using SiH ₄ as a film forming gas, a good etching characteristics in the temperature range of the film formation by the SiH ₄ as the etching gas Processes using Cl ₂ are known. Further, a process using SiH ₂ Cl ₂ as a film forming gas and HCl as an etching gas is known. Comparing SiH ₄ and SiH ₂ Cl ₂ as film formation gases, film formation with SiH ₄ has a higher film formation rate than film formation with SiH ₂ Cl ₂ , and the film formation temperature can be lowered to reduce thermal damage. There is an advantage that you can.

However, when Cl ₂ is used as an etching gas, there is a problem that etching is performed up to the base (N +) of the substrate. Further, in a process using HCl as an etching gas while avoiding etching to the base, it is necessary to use SiH ₂ Cl ₂ as a film forming gas in a temperature range where the etching performance is exhibited, and in a process using Cl ₂ as an etching gas. However, SiH ₄ needs to be used as a film forming gas in a temperature range where the etching performance is exhibited, and the film forming process using SiH ₂ Cl ₂ has a problem that the film forming rate is lower than the film forming process using SiH ₄ .

The present invention has been made in view of the above-described problems, and provides a method for manufacturing a semiconductor device that can prevent etching of the base (N +) and can form a film at a relatively high film formation rate. The purpose is to do.

In order to solve the above-described problems, a semiconductor device manufacturing method according to the present invention includes a first step of carrying a silicon substrate into a processing chamber, and at least a first step in the processing chamber while heating the silicon substrate. A second step of supplying a silane-based gas and a first etching gas; and a third step of supplying at least a second silane-based gas and a second etching gas into the processing chamber while heating the silicon substrate. It is characterized by having.

  The method for manufacturing a semiconductor device according to the present invention includes a first step of carrying a silicon substrate into a processing chamber, and at least a first silane-based gas and a first step in the processing chamber while heating the silicon substrate. A second step of supplying an etching gas; a third step of supplying at least a second silane-based gas into the process chamber while heating the silicon substrate; and a process chamber while heating the silicon substrate. And a fourth step of supplying at least a second etching gas, and the third step and the fourth step are repeated a plurality of times.

  The method for manufacturing a semiconductor device according to the present invention is characterized in that the step of supplying each gas is performed in a state where the temperature in the processing chamber is stable. On the other hand, the semiconductor device manufacturing method according to the present invention is characterized in that the temperature is changed when shifting from the second step to the third step.

In the method for manufacturing a semiconductor device according to the present invention, the first silane-based gas is SiH ₂ Cl ₂ , the first etching gas is HCl, the second silane-based gas is SiH ₄ , The second etching gas is Cl ₂ .

Also, the method for manufacturing a semiconductor device according to the present invention is characterized in that a film is formed from 10 to 2000 mm in the second step. The semiconductor device manufacturing method according to the present invention is characterized in that the second step is performed by a single wafer type device, and the third and subsequent steps are performed by a batch type device.

The substrate processing apparatus according to the present invention includes a processing chamber for storing a silicon substrate, a heating unit for heating the silicon substrate, a plurality of gas supply units for supplying a silane-based gas and an etching gas into the processing chamber, In the first step, the control means has an exhaust means for exhausting the atmosphere in the processing chamber, and a control means for controlling the respective means. In the second step, the second silane gas and the second etching gas are controlled to be supplied by the second gas supply means.
Preferably, the heating means is controlled to heat the silicon substrate at a first temperature in the first step and to heat the silicon substrate at a second temperature in the second step. To do. More preferably, the heating means is controlled to heat the first step and the second step at the same temperature.

According to the present invention, it is possible to prevent the base (N +) from being etched and to form a film at a relatively high film formation rate.

Hereinafter, embodiments of a method for manufacturing a semiconductor device according to the present invention will be described in detail with reference to the drawings.

Embodiment 1 FIG.
In the present embodiment, as an example, the substrate processing apparatus is configured as a semiconductor device manufacturing apparatus that performs processing steps in a semiconductor device manufacturing method. FIG. 1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention. In the following description, a case where a vertical substrate processing apparatus that performs oxidation, diffusion processing, CVD processing, or the like is applied to the substrate will be described. Also,
The direction used for the description is based on the direction indicated by the arrow in FIG.

As shown in FIG. 1, a semiconductor device manufacturing apparatus 101 using a cassette 110 as a wafer carrier containing a wafer (substrate) 200 made of silicon or the like is a case 111.
It has.

The cassette 110 is loaded onto the cassette stage 114 by an in-process conveyance device (not shown) and unloaded from the cassette stage 114. Cassette stage 1
14, the wafer 200 in the cassette 110 is placed in a vertical posture by the in-process transfer device,
The cassette 110 is loaded so that the wafer loading / unloading port faces upward, the cassette 110 is rotated clockwise 90 ° to the rear of the housing, and the wafer 200 in the cassette 110 assumes a horizontal posture. Is configured to be operable to face the rear of the housing.

A cassette shelf 105 is installed at a substantially central portion in the front-rear direction in the casing 111, and the cassette shelf 105 is configured to store a plurality of cassettes 110 in a plurality of stages and a plurality of rows. The cassette shelf 105 is provided with a transfer shelf 123 in which the cassette 110 is stored. Further, a preliminary cassette shelf 107 is provided above the cassette stage 114, and is configured to store the cassette 110 preliminary.

A cassette carrying device 118 is installed between the cassette stage 114 and the cassette shelf 105. The cassette transport device 118 includes a cassette elevator 118a that can be moved up and down while holding the cassette 110, and a cassette transport mechanism 118b as a transport mechanism. The cassette stage 118 is operated by continuous operation of the cassette elevator 118a and the cassette transport mechanism 118b. 114, cassette shelf 105, spare cassette shelf 107, cassette 1
10 is transported.

A wafer transfer mechanism 125 is installed behind the cassette shelf 105. The wafer transfer mechanism 125 includes a wafer transfer device 125a and a wafer transfer device 125a that can rotate or linearly move the wafer 200 in the horizontal direction. It consists of a wafer transfer device elevator 125b and a tweezer 125c for raising and lowering. The wafer transfer device elevator 125b includes a pressure-resistant housing 11.
1 at the right end. By continuously operating the wafer transfer apparatus elevator 125b and the wafer transfer apparatus 125a, the wafer 200 is loaded and unloaded from the boat 130 using the tweezers 125c of the wafer transfer apparatus 125a as the mounting portion of the wafer 200. It is configured.

A processing furnace 202 is provided above the rear portion of the casing 111. The lower end portion of the processing furnace 202 is configured to be opened and closed by a furnace port shutter 147. Below the processing furnace 202 is provided a boat elevator 115 as an elevating mechanism for raising and lowering the boat 130 to the processing furnace 202, and a seal as a lid is provided on the arm 128 as a connecting tool connected to the elevating platform of the boat elevator 115. The cap 219 is installed horizontally, and the seal cap 219
Is configured to support the boat 130 vertically and to close the lower end of the processing furnace 202. The boat 130 includes a plurality of holding members so that a plurality of (for example, about 50 to 150) wafers 200 are horizontally held in a state where their centers are aligned in the vertical direction. It is configured.

Above the cassette shelf 105, a clean unit 134a composed of a supply fan and a dustproof filter is provided so as to supply clean air, which is purified air, and the clean air is circulated inside the casing 111. It is configured as follows. In addition, a clean unit 134b composed of a supply fan and a dust-proof filter is installed to supply clean air at the left end of the casing 111 opposite to the wafer transfer device elevator 125b and the boat elevator 115 side. The clean air blown out from the clean unit 134b flows through the wafer transfer device 125a and the boat 130, and then is sucked into an exhaust device (not shown) and exhausted outside the casing 111.

  Next, the operation of the substrate processing apparatus according to the embodiment of the present invention will be described.

First, the cassette 110 is loaded from a cassette loading / unloading exit (not shown), and the wafer 200 is placed on the cassette stage 114 in a vertical posture so that the wafer loading / unloading port of the cassette 110 faces upward. Thereafter, the cassette 110 is rotated 90 ° clockwise around the rear side of the cassette 110 so that the wafer 200 in the cassette 110 is placed in a horizontal position by the cassette stage 114 and the wafer loading / unloading port of the cassette 110 faces the rear side of the casing. .

Next, the cassette 110 is automatically transported and delivered by the cassette transport device 118 to the designated shelf position of the cassette shelf 105 or the spare cassette shelf 107, temporarily stored, and then stored in the cassette shelf 105 or the spare shelf. It is transferred from the cassette shelf 107 to the transfer shelf 123 by the cassette transfer device 118 or directly transferred to the transfer shelf 123.

When the cassette 110 is transferred to the transfer shelf 123, the wafers 200 are picked up from the cassette 110 by the tweezer 125c of the wafer transfer device 125a through the wafer loading / unloading port and loaded into the boat 130. The wafer transfer device 125 a that has transferred the wafer 200 to the boat 130 returns to the cassette 110 and loads the next wafer 200 into the boat 130.

When a predetermined number of wafers 200 are loaded into the boat 130, the furnace port shutter 14 is loaded.
7 is opened by the furnace port shutter 147. Subsequently, the boat 130 holding the group of wafers 200 is carried into the processing furnace 202 when the seal cap 219 is lifted by the boat elevator 115.

After the carry-in, arbitrary processing is performed on the wafer 200 in the processing furnace 202.
After the processing, the wafer 200 and the cassette 110 are discharged out of the casing 111 in the reverse procedure described above.

Next, the configuration of the processing furnace 202 of the substrate processing apparatus will be described. FIG. 2 is a schematic configuration diagram of the processing furnace and the periphery of the processing furnace of the substrate processing apparatus suitably used in the embodiment of the present invention, and is shown as a longitudinal sectional view.

As shown in FIG. 2, the processing furnace 202 has a heater 206 as a heating mechanism. The heater 206 has a cylindrical shape, and is composed of a heater wire and a heat insulating member provided around the heater wire.
It is installed vertically by being supported by a holding body (not shown).

Inside the heater 206, an outer tube 205 as a reaction tube is disposed concentrically with the heater 206. The outer tube 205 is made of a heat-resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end opened. A processing chamber 201 is formed in a cylindrical hollow portion inside the outer tube 205, and is configured to be able to accommodate wafers 200 as substrates in a state where they are aligned in multiple stages in a vertical posture in a horizontal posture by a boat 130 described later. Yes.

A manifold 209 is disposed below the outer tube 205 concentrically with the outer tube 205. The manifold 209 is made of, for example, stainless steel and has a cylindrical shape with an upper end and a lower end opened. The manifold 209 is provided to support the outer tube 205. An O-ring as a seal member is provided between the manifold 209 and the outer tube 205. Since the manifold 209 is supported by a holding body (not shown), the outer tube 205 is installed vertically. A reaction vessel is formed by the outer tube 205 and the manifold 209.

The manifold 209 is provided with a gas exhaust pipe 231 and a gas supply pipe 232 that passes therethrough. The gas supply pipe 232 is divided into five on the upstream side, and the valves 175 to 179 and an MFC (Mass Flow Control) as a gas flow rate control device.
the first gas supply source 180 and the second gas supply source 181 through 185-189.
, A third gas supply source 182, a fourth gas supply source 183, and a fifth gas supply source 184, respectively. A gas flow rate control unit 235 is electrically connected to the MFCs 185 to 189 and the valves 175 to 179, and is configured to control at a desired timing so that the flow rate of the supplied gas becomes a desired flow rate. . A vacuum exhaust device 246 such as a vacuum pump is connected to the downstream side of the gas exhaust pipe 231 via a pressure sensor (not shown) as a pressure detector and an APC valve 242 as a pressure regulator. Pressure sensor and APC valve 24
2, a pressure control unit 236 is electrically connected, and the pressure control unit 236 adjusts the opening degree of the APC valve 242 based on the pressure detected by the pressure sensor, so that the inside of the processing chamber 201 is Control is performed at a desired timing so that the pressure becomes a desired pressure.

Below the manifold 209, a seal cap 219 is provided as a furnace port lid for hermetically closing the lower end opening of the manifold 209. The seal cap 219 is
For example, it is made of a metal such as stainless steel and is formed in a disk shape. On the upper surface of the seal cap 219, an O-ring as a seal member that comes into contact with the lower end of the manifold 209 is provided. The seal cap 219 is provided with a rotation mechanism 254. Rotating mechanism 254
The rotation shaft 255 passes through the seal cap 219 and is connected to a boat 130 described later, and is configured to rotate the wafer 200 by rotating the boat 130.
The seal cap 219 is configured to be moved up and down in a vertical direction by a lifting motor 248 described later as a lifting mechanism provided outside the processing furnace 202, and thereby, the boat 130 is carried into and out of the processing chamber 201. It is possible. A drive control unit 237 is electrically connected to the rotation mechanism 254 and the lift motor 248, and is configured to control at a desired timing so as to perform a desired operation.

The boat 130 as the substrate holder is made of a heat-resistant material such as quartz or silicon carbide,
The plurality of wafers 200 are arranged in a horizontal posture and aligned in the center with each other, and are held in multiple stages. In addition, a plurality of heat insulating plates 216 as a disk-shaped heat insulating member made of a heat resistant material such as quartz or silicon carbide are arranged in a multi-stage in a horizontal posture at the lower portion of the boat 130. Heat is configured not to be transmitted to the manifold 209 side.

In the vicinity of the heater 206, a temperature sensor (not shown) is provided as a temperature detector for detecting the temperature in the processing chamber 201. The heater 206 and the temperature sensor are electrically connected to the temperature controller 23.
8 is connected, and the temperature in the processing chamber 201 is controlled at a desired timing so that the temperature in the processing chamber 201 becomes a desired temperature distribution by adjusting the power supply to the heater 206 based on the temperature information detected by the temperature sensor. It is configured.

In the configuration of the processing furnace 202, the first processing gas is supplied from the first gas supply source 180 and the flow rate thereof is adjusted by the MFC 185, and then the gas supply pipe 2 is connected via the valve 175.
32 is introduced into the processing chamber 201. The second processing gas is supplied from the second gas supply source 181, the flow rate of which is adjusted by the MFC 186, and then introduced into the processing chamber 201 through the valve 176 through the gas supply pipe 232. The third process gas is a third gas supply source 182.
After the flow rate is adjusted by the MFC 187, the gas is introduced into the processing chamber 201 from the gas supply pipe 232 through the valve 177. The fourth process gas is a fourth gas supply source 183.
After the flow rate is adjusted by the MFC 188, the gas is introduced into the processing chamber 201 from the gas supply pipe 232 through the valve 178. The fifth processing gas is a fifth gas supply source 184.
After the flow rate is adjusted by the MFC 189, the gas is introduced into the processing chamber 201 from the gas supply pipe 232 through the valve 179. The gas in the processing chamber 201 is exhausted from the processing chamber 201 by a vacuum pump 246 as an exhaust device connected to the gas exhaust pipe 231.

  Next, the configuration around the processing furnace of the substrate processing apparatus used in the present invention will be described.

As shown in FIG. 2, a lower substrate 245 is provided on the outer surface of the load lock chamber 140 as a spare chamber. The lower substrate 245 is provided with a guide shaft 264 that fits with the lifting platform 249 and a ball screw 244 that screws with the lifting platform 249. The upper substrate 247 is provided on the upper ends of the guide shaft 264 and the ball screw 244 that are erected on the lower substrate 245. The ball screw 244 is rotated by an elevating motor 248 provided on the upper substrate 247. The lifting platform 249 is configured to move up and down as the ball screw 244 rotates.

A hollow elevating shaft 250 is vertically suspended from the elevating table 249, and a connecting portion between the elevating table 249 and the elevating shaft 250 is airtight. The elevating shaft 250 moves up and down together with the elevating table 249. The lifting shaft 250 penetrates the top plate 251 of the load lock chamber 140. The through hole of the top plate 251 through which the elevating shaft 250 penetrates has a sufficient margin so as not to contact the elevating shaft 250. Bellows 265 as a hollow stretchable body having elasticity so as to cover the periphery of the lifting shaft 250 between the load lock chamber 140 and the lifting platform 249.
Is provided to keep the load lock chamber 140 airtight. Bellows 265 is a lifting platform 249.
The bellows 265 has an inner diameter that is sufficient for the amount of lifting and lowering of the lifting shaft 250.
The bellows 265 is configured not to come into contact with the expansion / contraction of the bellows 265.

A lifting substrate 252 is fixed horizontally to the lower end of the lifting shaft 250. A drive unit cover 253 is airtightly attached to the lower surface of the elevating substrate 252 via a seal member such as an O-ring. The elevating board 252 and the drive unit cover 253 constitute a drive unit storage case 256. With this configuration, the inside of the drive unit storage case 256 is isolated from the atmosphere in the load lock chamber 140.

In addition, a rotation mechanism 254 of the boat 130 is provided inside the drive unit storage case 256,
The periphery of the rotation mechanism 254 is cooled by the cooling mechanism 257.

The power supply cable 258 is led from the upper end of the lifting shaft 250 through the hollow portion of the lifting shaft 250 to the rotating mechanism 254 and connected thereto. The cooling mechanism 257 and the seal cap 219 are provided with a cooling flow path 259, and a cooling water pipe 260 for supplying cooling water is connected to the cooling flow path 259. It passes through the hollow part.

As the elevating motor 248 is driven and the ball screw 244 rotates, the drive unit storage case 256 is raised and lowered via the elevating platform 249 and the elevating shaft 250.

As the drive unit storage case 256 rises, the seal cap 219 provided in an airtight manner on the elevating substrate 252 closes the furnace port 161, which is an opening of the process furnace 202, and enables wafer processing. When the drive unit storage case 256 is lowered, the seal cap 219 is moved.
At the same time, the boat 130 is lowered and the wafer 200 can be unloaded.

The gas flow rate control unit 235, the pressure control unit 236, the drive control unit 237, and the temperature control unit 238 are
An operation unit and an input / output unit are also configured, and are electrically connected to a main control unit 239 that controls the entire substrate processing apparatus. These gas flow control unit 235, pressure control unit 236, drive control unit 237,
The temperature control unit 238 and the main control unit 239 are configured as a controller 240.

In this embodiment, the wafer 200 is a substrate having a silicon surface and an insulating film such as an oxide film.

Next, FIG. 2 shows a film forming method for selectively growing a silicon-based epitaxial film only on a single crystal silicon surface of a wafer as one step of a semiconductor device manufacturing process using the processing furnace according to the above configuration. This will be described with reference to FIGS. 3 and 4 with reference to FIG. FIG. 3 is a flowchart showing an operation of the epitaxial film forming process in the present embodiment, and FIG. 4 is a diagram showing a gas path of the processing furnace. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by a controller (control means). Further, the film on the silicon surface is formed in the first layer from the first 500 to 1000 mm, and the remaining film thickness is formed in the second layer.

First, when a plurality of wafers 200 are loaded into the boat 130, a plurality of wafers 200 (
The boat 130 holding the silicon substrate is carried into the processing chamber 201 by the lifting / lowering operation of the lifting / lowering base 249 and the lifting / lowering shaft 250 by the lifting / lowering motor 248 (S101, first step). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring.

Next, the processing chamber 201 is evacuated by the evacuation device 246 so as to have a desired pressure (degree of vacuum). At this time, the pressure in the processing chamber 201 is measured by a pressure sensor, and the pressure regulator 242 is feedback-controlled based on the measured pressure. Further, the processing chamber 201
The heater 2 has a desired temperature (first temperature) suitable for forming the first film.
It is heated by 06 (heating means) (S102, second step). Note that when the inside of the processing chamber 201 is heated by the heater 206, feedback control is performed on the power supply to the heater 206 based on temperature information detected by the temperature sensor so that the inside of the processing chamber 201 has a desired temperature distribution. Subsequently, the wafer 200 is rotated by rotating the boat 130 by the rotation mechanism 254.

The first gas supply source 180, the second gas supply source 181, the third gas supply source 182, the fourth gas supply source 183, and the fifth gas supply source 184, which are a plurality of gas supply means, SiH ₂ Cl ₂ gas, HCl gas, H ₂ gas, SiH ₄ gas, and Cl ₂ gas are sealed as process gases, and then SiH ₂ Cl ₂ gas (first gas) is formed from the first gas supply source 180 as a film forming gas. One silane-based gas) and HC as an etching gas from the second gas supply source 181.
l gas (first etching gas) is supplied, and SiH ₂ Cl ₂ is supplied from the third gas supply source 182.
H ₂ gas is supplied as a dilution gas for the gas. After the opening degree of each of the MFCs 185 to 187 is adjusted so that each gas has a desired flow rate, the valves 175 to 177 are opened, and each processing gas flows through the gas supply pipe 232, thereby processing chamber 201. Is introduced into the processing chamber 201 from above. As shown in FIG. 4, the introduced gas flows into the processing chamber 201.
The gas is exhausted from the gas exhaust pipe 231 (exhaust means). SiH ₂ Cl ₂ gas is treated chamber 2
When passing through 01, the wafer 200 is contacted to form a film on its surface, and HCl gas is added to the wafer 2.
00 film formed by SiH ₂ Cl ₂ gas on the oxide silicon is etched, so that the high-temperature silicon selective epitaxial film as the first layer of film is deposited on the surface of the wafer 200 (S103, Second step).

When a preset time elapses, the first gas supply source 180 and the second gas supply source 18 are used.
1 valves 175 and 176 are closed, the supply of SiH ₂ Cl ₂ gas and HCl gas is stopped, and the _second chamber film is formed in the processing chamber 201 while only H ₂ gas is supplied. The degree of energization to the heater 206 is feedback-controlled so as to obtain a desired temperature (second temperature) suitable for (S104, third step). Here, the reason for supplying the H ₂ gas is to prevent back diffusion of impurities such as oxygen and carbon into the high temperature silicon selective epitaxial film as the first layer film formed in the second step. It is. Further, by supplying H ₂ gas, the Cl end generated in the high-temperature silicon selective epitaxial film as the first layer film formed in the second step can be H-terminated, so that the quality is higher. The selective epitaxial film can be formed.

When the inside of the processing chamber 201 has a desired temperature distribution and the temperature is stabilized (S105), H ₂
While the gas is supplied, SiH ₄ gas (second silane-based gas) is supplied from the fourth gas supply source 183 as a film forming gas, and as the etching gas (second etching gas) from the fifth gas supply source 184. Cl ₂ gas is supplied and MFC is adjusted so that each gas has a desired flow rate.
After the opening degrees of 188 and 189 are adjusted, the valves 178 and 179 are opened, and the respective processing gases flow through the gas supply pipes 232, and the processing chamber 2 starts from the upper portion of the processing chamber 201.
Introduced in 01. When the SiH ₄ gas passes through the processing chamber 201, it comes into contact with the wafer 200 and forms a film on the surface thereof, and the Cl ₂ gas etches a film formed by the SiH ₄ gas on the insulating film of the wafer 200. As a result, a low temperature silicon selective epitaxial film is formed as the second layer film (S106, fourth step).

When a preset time elapses, the fourth gas supply source 183 and the fifth gas supply source 18 are used.
4 valves 178 and 179 are closed, the supply of SiH ₄ gas and Cl ₂ gas is stopped, the inside of the processing chamber 201 is replaced with H ₂ gas or N ₂ gas, and the pressure in the processing chamber 201 is constantly maintained. The pressure is restored (S107).

After that, the seal cap 219 is lowered by the lifting motor 248 and the manifold 2
The lower end of 09 is opened, and the processed wafer 200 is carried out from the lower end of the manifold 209 to the outside of the outer tube 205 while being held by the boat 130. Thereafter, the processed wafer 200 is taken out from the boat 130 (S108).

As an example, the processing conditions for processing the wafer 200 in the processing furnace of the present embodiment include, for example, the processing temperature at the time of forming the high-temperature silicon selective epitaxial film that is the first layer film. 700 to 850 ° C., SiH ₂ Cl ₂ gas flow rate of 1 to 1000 sccm, HCl gas flow rate of 1 to 1000 sccm, H ₂ gas flow rate of 10 to 50000 sccm, processing pressure of 2000 pa or less are exemplified. At the time of changing the temperature to the temperature at the time of forming the layer, an H ₂ gas flow rate of 10 to 50000 sccm and a processing pressure of 2000 pa or less are exemplified, and at the time of forming the low temperature silicon selective epitaxial film which is the second layer film The processing temperature of 500 to 750 ° C., SiH ₄ gas flow rate 1~1000sccm, Cl ₂ gas flow rate 1~000sccm, H ₂ gas flow rate 10 to 5 000Sccm, exemplified process pressure 2000pa below, processing the wafer 200 is made by maintaining the respective process conditions to a constant value within each range.

As described above, the first layer etching gas has no influence on the base (N +).
l gas is used, and as the film forming gas for the second layer, the film forming temperature is low, and therefore, SiH ₄ gas is used which has a low film damage and a high film forming rate. By forming the film later, the surface of the wafer 200 can be formed at a high film formation rate without affecting the base (N +).

Embodiment 2. FIG.
In Embodiment 1, after the film formation of the first layer is completed, SiH ₂ Cl ₂ gas and HCl are used.
The supply of gas was stopped, and only H ₂ gas was supplied into the processing chamber 201. However, when only H ₂ gas was supplied, moisture released from the oxide film of the substrate adhered to the interface of the silicon selective epitaxial film, and oxygen at the interface There is a problem that the concentration becomes high.

Therefore, in the present embodiment, even after the first layer is formed, SiH ₂ Cl _{2 is used.}
The supply of the gas and HCl gas is not stopped until the film formation of the second layer, but is continued until the temperature in the processing chamber 201 is stabilized. The operation will be described below with reference to FIG. 5 which is a flowchart showing the operation of the epitaxial film forming process in the present embodiment. The configuration of the apparatus that executes this embodiment is the same as that of the apparatus that executes the first embodiment.

First, when a plurality of wafers 200 are loaded into the boat 130, a plurality of wafers 200 (
The boat 130 holding the silicon substrate is carried into the processing chamber 201 by the lifting / lowering operation of the lifting / lowering base 249 and the lifting / lowering shaft 250 by the lifting / lowering motor 248 (S201, first step). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring.

Next, the processing chamber 201 is evacuated by the evacuation device 246 so as to have a desired pressure (degree of vacuum). At this time, the pressure in the processing chamber 201 is measured by a pressure sensor, and the pressure regulator 242 is feedback-controlled based on the measured pressure. Further, the processing chamber 201
The heater 2 has a desired temperature (first temperature) suitable for forming the first film.
Heated by 06 (heating means) (S202, second step). Note that when the inside of the processing chamber 201 is heated by the heater 206, feedback control is performed on the power supply to the heater 206 based on temperature information detected by the temperature sensor so that the inside of the processing chamber 201 has a desired temperature distribution. Subsequently, the wafer 200 is rotated by rotating the boat 130 by the rotation mechanism 254.

Next, a first gas supply source 180, a second gas supply source 181, which are a plurality of gas supply means,
The third gas supply source 182, the fourth gas supply source 183, and the fifth gas supply source 184 have SiH ₂ Cl ₂ gas, HCl gas, H ₂ gas, SiH ₄ gas, and Cl ₂ gas as processing gases, respectively. Then, SiH ₂ Cl ₂ gas (first silane-based gas) is supplied as a film forming gas from the first gas supply source 180, and HCl gas is used as the etching gas from the second gas supply source 181. (First etching gas) is supplied, and SiH is supplied from the third gas supply source 182.
H ₂ gas is supplied as a dilution gas for ₂ Cl ₂ gas. After the opening degrees of the MFCs 185 to 187 are adjusted so that the respective gases have desired flow rates, the valves 175 to 17 are adjusted.
7 are opened, and each processing gas flows through the gas supply pipe 232 and the processing chamber 201 is opened.
Is introduced into the processing chamber 201 from above. As shown in FIG. 4, the introduced gas passes through the inside of the processing chamber 201 and is exhausted from the gas exhaust pipe 231 (exhaust means). When the SiH ₂ Cl ₂ gas passes through the processing chamber 201, it comes into contact with the wafer 200 to form a film on its surface, and the HCl gas forms a film formed on the silicon oxide of the wafer 200 with the SiH ₂ Cl ₂ gas. As a result, a high temperature silicon selective epitaxial film is formed on the surface of the wafer 200 as a first layer film (S203, second step).

Even after the preset time has elapsed, SiH ₂ Cl ₂ gas, HCl gas, and H ₂ gas are continuously supplied, and the processing chamber 201 has a desired layer suitable for forming a second layer film. The state of energization to the heater 206 is feedback controlled so as to be the temperature (second temperature) (S204).
The third step).

When the inside of the processing chamber 201 has a desired temperature distribution and the temperature is stabilized (S205), the first
The valves 175 and 176 of the gas supply source 180 and the second gas supply source 181 are closed, the supply of SiH ₂ Cl ₂ gas and HCl gas is stopped, and then the fourth gas supply source 1
83, a SiH ₄ gas (second silane gas) is supplied as a film forming gas, and a Cl ₂ gas is supplied as an etching gas (second etching gas) from the fifth gas supply source 184.
After the openings of the MFCs 188 and 189 are adjusted so that each gas has a desired flow rate, the valves 178 and 1179 are opened, and each processing gas flows through the gas supply pipe 232 and the processing chamber 201. Is introduced into the processing chamber 201 from above. When the SiH ₄ gas passes through the processing chamber 201, it comes into contact with the wafer 200 and forms a film on the surface thereof, and the Cl ₂ gas etches a film formed by the SiH ₄ gas on the insulating film of the wafer 200. As a result, a low temperature silicon selective epitaxial film is formed as the second layer film (S206, fourth step).

When a preset time elapses, the fourth gas supply source 183 and the fifth gas supply source 18 are used.
4 valves 178 and 179 are closed, supply of SiH ₄ gas and Cl ₂ gas is stopped, the inside of the processing chamber 201 is replaced with H ₂ gas, and the pressure in the processing chamber 201 is returned to normal pressure. (S207).

After that, the seal cap 219 is lowered by the lifting motor 248 and the manifold 2
The lower end of 09 is opened, and the processed wafer 200 is carried out from the lower end of the manifold 209 to the outside of the outer tube 205 while being held by the boat 130. Thereafter, the processed wafer 200 is taken out from the boat 130 (S208).

As an example, the processing conditions for processing the wafer 200 in the processing furnace of the present embodiment include, for example, the processing temperature at the time of forming the high-temperature silicon selective epitaxial film that is the first layer film. 700 to 850 ° C., SiH ₂ Cl ₂ gas flow rate of 1 to 1000 sccm, HCl gas flow rate of 1 to 1000 sccm, H ₂ gas flow rate of 10 to 50000 sccm, processing pressure of 2000 pa or less are exemplified. At the time of changing the temperature to the temperature at the time of forming the layer, the SiH ₂ Cl ₂ gas flow rate is 1 to 1000 sccm, the HCl gas flow rate is 1 to 1000 sccm, the H ₂ gas flow rate is 10 to 50000, and the processing pressure is 2000 pa or less. during formation of the low-temperature silicon selective epitaxial film is a film layer first, treatment temperature 500 to 750 ° C., SiH ₄ gas flow rate 1 000sccm, Cl ₂ gas flow rate 1~1000sccm, H ₂ gas flow rate 10～50000Sccm, exemplified process pressure 2000pa less, the process on the wafer 200 by maintaining the respective process conditions to a constant value within each range Made.

As described above, the SiH ₂ Cl ₂ gas and the HCl gas are continuously supplied even after the film formation of the first layer, so that the H ₂ gas having no reduction effect unless the temperature is as high as 800 ° C. is 800 ° C.
Even when the temperature is lowered after film formation of the first layer, impurities such as water adhering to the silicon surface can be removed by SiH ₂ Cl ₂ gas having a reducing effect even at a low temperature of less than Can
Further, selectivity can be maintained by HCl gas which is an etching gas.

Although the results differ depending on the wafer to be processed, the interface SIMS (Secondary Io
As a result of the analysis by the initialization mass spectrometer, when only H ₂ is continuously supplied during the switching from the temperature in the first layer deposition to the temperature in the second layer, the interface oxygen concentration peak value is 2E19 atoms / When an oxygen concentration exceeding cm ³ was detected, but when Si ₂ Cl ₂ gas and HCl gas were continuously supplied together with H ₂ , the interfacial oxygen concentration peak value decreased to 1E19 atoms / cm ³ or less.

Embodiment 3 FIG.
Embodiment 3 is a method capable of performing continuous processing by performing film formation of the first layer and film formation of the second layer at a constant temperature throughout without changing the set temperature. Hereinafter, the operation will be described with reference to FIG. 6 which is a flowchart showing the operation of the epitaxial film forming process in the present embodiment. The configuration of the apparatus that executes this embodiment is the same as that of the apparatus that executes the first embodiment.

When a plurality of wafers 200 are loaded into the boat 130, a plurality of wafers 200 (
The boat 130 holding the silicon substrate is carried into the processing chamber 201 by the lifting / lowering operation of the lifting / lowering base 249 and the lifting / lowering shaft 250 by the lifting / lowering motor 248 (S301, first step). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring.

Next, the processing chamber 201 is evacuated by the evacuation device 246 so as to have a desired pressure (degree of vacuum). At this time, the pressure in the processing chamber 201 is measured by a pressure sensor, and the pressure regulator 242 is feedback-controlled based on the measured pressure. Further, the processing chamber 201
The heater 2 has a desired temperature (first temperature) suitable for forming the first film.
It is heated by 06 (heating means) (S302, second step). Note that when the inside of the processing chamber 201 is heated by the heater 206, feedback control is performed on the power supply to the heater 206 based on temperature information detected by the temperature sensor so that the inside of the processing chamber 201 has a desired temperature distribution. Subsequently, the wafer 200 is rotated by rotating the boat 130 by the rotation mechanism 254.

The first gas supply source 180, the second gas supply source 181, the third gas supply source 182, the fourth gas supply source 183, and the fifth gas supply source 184, which are a plurality of gas supply means, SiH ₂ Cl ₂ gas, HCl gas, H ₂ gas, SiH ₄ gas, and Cl ₂ gas are sealed as process gases, and then SiH ₂ Cl ₂ gas (first gas) is formed from the first gas supply source 180 as a film forming gas. One silane-based gas) and HC as an etching gas from the second gas supply source 181.
l gas (first etching gas) is supplied, and SiH ₂ Cl ₂ is supplied from the third gas supply source 182.
H ₂ gas is supplied as a dilution gas for the gas. After the opening degree of each of the MFCs 185 to 187 is adjusted so that each gas has a desired flow rate, the valves 175 to 177 are opened, and each processing gas flows through the gas supply pipe 232, thereby processing chamber 201. Is introduced into the processing chamber 201 from above. As shown in FIG. 4, the introduced gas flows into the processing chamber 201.
The gas is exhausted from the gas exhaust pipe 231 (exhaust means). SiH ₂ Cl ₂ gas is treated chamber 2
When passing through 01, the wafer 200 is contacted to form a film on its surface, and HCl gas is added to the wafer 2
The film formed by SiH ₂ Cl ₂ gas on the 00 insulating film is etched, and as a result, a high-temperature silicon selective epitaxial film is formed on the surface of the wafer 200 as the first layer film (S303, S303, Second step).

When a preset time elapses, the first gas supply source 180 and the second gas supply source 18 are used.
The first valves 175 and 176 are closed, the supply of SiH ₂ Cl ₂ gas and HCl gas is stopped, and only the H ₂ gas is supplied without changing the temperature (S304).
Here, the reason for supplying the H ₂ gas is to prevent back diffusion of impurities such as oxygen and carbon into the high temperature silicon selective epitaxial film as the first layer film formed in the second step. It is. Further, by supplying H ₂ gas, the Cl end generated in the high-temperature silicon selective epitaxial film as the first layer film formed in the second step can be H-terminated, so that the quality is higher. The selective epitaxial film can be formed.

Then, the temperature after a certain time the H ₂ gas into the process chamber 201 is supplied in a stable state, continues SiH ₄ gas (second silane from the fourth gas supply source 183 while H ₂ gas is supplied as a film forming gas System gas), Cl ₂ gas is supplied as etching gas (second etching gas) from the fifth gas supply source 184, and the openings of the MFCs 188 and 189 are adjusted so that each gas has a desired flow rate. After each adjustment, the valves 178 and 179 are opened, and the respective processing gases flow through the gas supply pipe 232 and are introduced into the processing chamber 201 from the upper portion of the processing chamber 201. When the SiH ₄ gas passes through the processing chamber 201, it comes into contact with the wafer 200 to form a film on its surface, and the Cl ₂ gas etches a film formed by SiH ₄ gas on the silicon oxide of the wafer 200. As a result, a low-temperature silicon selective epitaxial film is formed as the second layer film (S305, third step).

When a preset time elapses, the fourth gas supply source 183 and the fifth gas supply source 18 are used.
4 valves 178 and 179 are closed, supply of SiH ₄ gas and Cl ₂ gas is stopped, the inside of the processing chamber 201 is replaced with H ₂ gas, and the pressure in the processing chamber 201 is returned to normal pressure. (S306).

After that, the seal cap 219 is lowered by the lifting motor 248 and the manifold 2
The lower end of 09 is opened, and the processed wafer 200 is carried out from the lower end of the manifold 209 to the outside of the outer tube 205 while being held by the boat 130. Thereafter, the processed wafer 200 is taken out from the boat 130 (S307).

As an example, the processing conditions for processing the wafer 200 in the processing furnace of the present embodiment include, for example, the processing temperature at the time of forming the high-temperature silicon selective epitaxial film that is the first layer film. Examples include 500 to 8500C, SiH ₂ Cl ₂ gas flow rate of 1 to 1000 sccm, HCl gas flow rate of 1 to 1000 sccm, H ₂ gas flow rate of 10 to 50000 sccm, and processing pressure of 2000 pa or less. When changing to a film, an H ₂ gas flow rate of 10 to 50000 sccm and a processing pressure of 2000 pa or less are exemplified, and at the time of forming a low-temperature silicon selective epitaxial film as the second layer film, a processing temperature of 500 to 8500 ° C. , SiH ₄ gas flow rate 1~1000sccm, Cl ₂ gas flow rate 1~1000sccm, H ₂ gas flow rate 10～50000Sccm, Is exemplified below physical pressure 2000 Pa, the processing on the wafer 200 is made by maintaining the respective process conditions to a constant value within each range. In addition, although the conditions of the process temperature of 1st layer film-forming and 2nd layer film-forming are process temperature 500-850 degreeC, the temperature of about 700 degreeC is more preferable.

  As described above, since the first layer film formation and the second layer film formation can be performed continuously at a constant temperature without changing the set temperature, two types of layers can be formed continuously. The film formation time is shortened and the processing efficiency can be improved.

Embodiment 4 FIG.
In the fourth embodiment, the second silane-based gas and the second etching gas are supplied in the film formation step of the second layer, but these gases are not supplied at the same time but are supplied alternately several times. It is characterized by doing. Hereinafter, the operation will be described with reference to FIG. 7 which is a flowchart showing the operation of the epitaxial film forming process in the present embodiment. The configuration of the apparatus that executes this embodiment is the same as that of the apparatus that executes the first embodiment.

When a plurality of wafers 200 are loaded into the boat 130, the boat 130 holding the plurality of wafers 200 (silicon substrates) is moved into the processing chamber 201 by the lifting / lowering operation of the lifting / lowering base 249 and the lifting / lowering shaft 250 by the lifting / lowering motor 248. It is carried in (S401, first step). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring.

Next, the processing chamber 201 is evacuated by the evacuation device 246 so as to have a desired pressure (degree of vacuum). At this time, the pressure in the processing chamber 201 is measured by a pressure sensor, and the pressure regulator 242 is feedback-controlled based on the measured pressure. Further, the processing chamber 201
The heater 2 has a desired temperature (first temperature) suitable for forming the first film.
It is heated by 06 (heating means) (S402, second step). Note that when the inside of the processing chamber 201 is heated by the heater 206, feedback control is performed on the power supply to the heater 206 based on temperature information detected by the temperature sensor so that the inside of the processing chamber 201 has a desired temperature distribution. Subsequently, the wafer 200 is rotated by rotating the boat 130 by the rotation mechanism 254.

The first gas supply source 180, the second gas supply source 181, the third gas supply source 182, the fourth gas supply source 183, and the fifth gas supply source 184, which are a plurality of gas supply means, SiH ₂ Cl ₂ gas, HCl gas, H ₂ gas, SiH ₄ gas, and Cl ₂ gas are sealed as process gases, and then SiH ₂ Cl ₂ gas (first gas) is formed from the first gas supply source 180 as a film forming gas. One silane-based gas) and HC as an etching gas from the second gas supply source 181.
l gas (first etching gas) is supplied, and SiH ₂ Cl ₂ is supplied from the third gas supply source 182.
H ₂ gas is supplied as a dilution gas for the gas. After the opening degree of each of the MFCs 185 to 187 is adjusted so that each gas has a desired flow rate, the valves 175 to 177 are opened, and each processing gas flows through the gas supply pipe 232, thereby processing chamber 201. Is introduced into the processing chamber 201 from above. As shown in FIG. 4, the introduced gas flows into the processing chamber 201.
The gas is exhausted from the gas exhaust pipe 231 (exhaust means). SiH ₂ Cl ₂ gas is treated chamber 2
When passing through 01, the wafer 200 is contacted to form a film on its surface, and HCl gas is added to the wafer 2.
The film formed by SiH ₂ Cl ₂ gas on the 00 insulating film is etched, and as a result, a high-temperature silicon selective epitaxial film is formed on the surface of the wafer 200 as the first layer film (S403, Second step).

When a preset time elapses, the first gas supply source 180 and the second gas supply source 18 are used.
1 valves 175 and 176 are closed, the supply of SiH ₂ Cl ₂ gas and HCl gas is stopped, and the _second chamber film is formed in the processing chamber 201 while only H ₂ gas is supplied. The degree of energization of the heater 206 is feedback-controlled so as to obtain a desired temperature (second temperature) suitable for (S404, third step). Here, the reason for supplying the H ₂ gas is that the high-temperature silicon selective epitaxial film as the first layer film formed in the second step is
This is to prevent back diffusion of impurities such as oxygen and carbon. Further, by supplying H ₂ gas, the Cl end generated in the high-temperature silicon selective epitaxial film as the first layer film formed in the second step can be H-terminated, so that the quality is higher. The selective epitaxial film can be formed.

When the inside of the processing chamber 201 has a desired temperature distribution and the temperature is stabilized (S405), H ₂
After the gas is supplied, SiH ₄ gas (second silane-based gas) is supplied from the fourth gas supply source 183 as a film forming gas, and the opening of the MFC 188 is adjusted so as to obtain a desired flow rate. 178 is opened, and SiH ₄ gas flows through the gas supply pipe 232 and is introduced into the processing chamber 201 from the upper portion of the processing chamber 201. When the SiH ₄ gas passes through the processing chamber 201, it comes into contact with the wafer 200 and forms a surface thereof. As a result, a low-temperature silicon selective epitaxial film is formed as a second layer film (S 406, Fourth step).

When a preset time elapses, the valve 178 of the fourth gas supply source 183 is closed, the supply of SiH ₄ gas is stopped, and the inside of the processing chamber 201 is replaced with H ₂ gas (S407, fifth) Step).

Subsequently, Cl ₂ gas was supplied as an etching gas (second etching gas) from the fifth gas supply source 184 while the H ₂ gas was being supplied, and the opening of the MFC 189 was adjusted to achieve a desired flow rate. Thereafter, the valve 179 is opened, and the Cl ₂ gas flows through the gas supply pipe 232 and is introduced into the processing chamber 201 from the upper portion of the processing chamber 201. The Cl ₂ gas etches the film formed by the SiH ₄ gas on the silicon oxide of the wafer 200 (S408, sixth step).

When a preset time has elapsed, the valve 179 of the fifth gas supply source 184 is closed, the supply of Cl ₂ gas is stopped, and the inside of the processing chamber 201 is replaced with H ₂ gas (S409, seventh Step).

After repeating S406 to S409 a predetermined number of times, the inside of the processing chamber 201 is replaced with H ₂ gas, and the pressure in the processing chamber 201 is returned to normal pressure.

After that, the seal cap 219 is lowered by the lifting motor 248 and the manifold 2
The lower end of 09 is opened, and the processed wafer 200 is carried out from the lower end of the manifold 209 to the outside of the outer tube 205 while being held by the boat 130. Thereafter, the processed wafer 200 is taken out from the boat 130 (S410).

As an example, the processing conditions for processing the wafer 200 in the processing furnace of the present embodiment include, for example, the processing temperature at the time of forming the high-temperature silicon selective epitaxial film that is the first layer film. 700 to 850 ° C., SiH ₂ Cl ₂ gas flow rate of 1 to 1000 sccm, HCl gas flow rate of 1 to 1000 sccm, H ₂ gas flow rate of 10 to 50000 sccm, processing pressure of 2000 pa or less are exemplified. At the time of changing the temperature to the temperature at the time of forming the layer, an H ₂ gas flow rate of 10 to 50000 sccm and a processing pressure of 2000 pa or less are exemplified, and at the time of forming the low temperature silicon selective epitaxial film which is the second layer film The processing temperature of 500 to 750 ° C., SiH ₄ gas flow rate 1～1000Sccm or Cl ₂ gas flow rate 1~1000sccm, H ₂ gas flow rate 10 50000Sccm, exemplified process pressure 2000pa below, processing the wafer 200 is made by maintaining the respective process conditions to a constant value within each range.

As described above, when the SiH ₄ gas and the Cl ₂ gas are supplied simultaneously in the formation of the low-temperature silicon selective epitaxial film as the second layer film, the etching rate of the Cl ₂ gas is too high and the growth rate is high. There is a risk that the film formation rate will decrease. On the other hand, when SiH ₄ gas and Cl ₂ gas are alternately supplied as in the present embodiment, film formation with SiH ₄ gas is not disturbed by Cl ₂ gas, so the overall growth rate is high. It is considered that the film can be formed efficiently.

In the first to fourth embodiments described above, the effects of the present invention can also be obtained by combining the steps of each embodiment. In the first to fourth embodiments described above, the case where an epitaxial film is formed on a silicon substrate using a vertical CVD apparatus has been described. However, the present invention is, for example, a horizontal or single wafer processing apparatus. Even if it exists, it is feasible and does not depend on the type of device. The present invention is not limited to the epitaxial film formation process, and can be applied to a film formation process in which a film is deposited on the substrate surface using a chemical reaction, for example, even a polysilicon film formation process. Further, the present invention is not limited to the film forming process on the silicon surface, but can be applied to the film forming process on the silicon germanium surface. Further, after the H ₂ gas is supplied after the first layer is formed and after the second layer is formed, an N ₂ gas is supplied in order to remove the H ₂ gas remaining in the processing chamber 201. It is preferable.

Note that the step of forming the first layer film and the step of forming the second layer film may be performed by different apparatuses. Specifically, when the film formation of the first layer is performed at a relatively high temperature, the film formation rate is fast, and thus, for example, it is efficient to perform the processing using a single wafer apparatus. On the other hand, the deposition speed of the second layer is faster than that of the first layer, but if the film thickness is thick, the productivity of the single-wafer device is reduced, so multiple substrates can be processed at one time. It is preferable to perform processing using a simple batch apparatus.

Furthermore, according to another preferred embodiment of the present invention, in the above-described third embodiment, the semiconductor device in which the first layer and the second layer are formed at a temperature in the processing chamber of about 700 ° C. A manufacturing method is provided.

Furthermore, in a preferred embodiment of the present invention, there is provided a method of manufacturing a semiconductor device in which purging with H ₂ gas is performed after supplying silane-based gas or etching gas in Embodiments 1 to 4 described above.

Further, in a preferred embodiment of the present invention, there is provided a method for manufacturing a semiconductor device in which the second layer is formed at a lower temperature than the first layer in the first embodiment, the second embodiment, or the fourth embodiment. Provided.

Further, in a preferred embodiment of the present invention, in the above-described Embodiment 2 to Embodiment 4, in the H ₂ gas purge after the formation of the first layer, the first silane system used in the formation of the first layer is used. A method of manufacturing a semiconductor device is provided in which at least the first silane-based gas among the gas and the first etching gas is continuously supplied.

Furthermore, in a preferred embodiment of the present invention, there is provided a method for manufacturing a semiconductor device in which the H2 gas keeps flowing constantly in the first to fourth embodiments described above.

Furthermore, in a preferred embodiment of the present invention, there is provided a method for manufacturing a semiconductor device that performs selective epitaxial growth in which a plurality of processes can be performed at one time in Embodiments 1 to 4 described above.

Furthermore, in a preferred embodiment of the present invention, there is provided a method of manufacturing a semiconductor device in which the purge is performed with N ₂ gas after purging with H 2 gas in Embodiments 1 to 4 described above.

1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention. It is a longitudinal cross-sectional view which shows the outline of the processing furnace of a substrate processing apparatus in embodiment of this invention, and a processing furnace periphery. 3 is a flowchart showing an operation of an epitaxial film formation process in the first embodiment. It is a figure which shows the gas path | route of the processing furnace in embodiment of this invention. 10 is a flowchart showing an operation of an epitaxial film formation process in the second embodiment. 10 is a flowchart showing an operation of epitaxial film formation processing in the third embodiment. 10 is a flowchart showing an operation of an epitaxial film formation process in the fourth embodiment.

Explanation of symbols

101 substrate processing apparatus, 175 to 179 valve, 180 first gas supply source, 181
2nd gas supply source, 182 3rd gas supply source, 183 4th gas supply source, 184 5th gas supply source, 185-189 MFC, 201 processing chamber, 202 processing furnace, 206
Heater, 231 gas exhaust pipe, 235 gas flow rate control unit, 236 pressure control unit, 237
Drive control unit, 238 Temperature control unit, 242 Pressure regulator, 246 Vacuum exhaust device.

Claims (10)

A first step of bringing the silicon substrate into the processing chamber;
A second step of supplying at least a first silane-based gas and a first etching gas into the processing chamber while heating the silicon substrate;
A third step of supplying at least a second silane-based gas and a second etching gas into the processing chamber while heating the silicon substrate;
A method for manufacturing a semiconductor device comprising: A first step of bringing the silicon substrate into the processing chamber;
A second step of supplying at least a first silane-based gas and a first etching gas into the processing chamber while heating the silicon substrate;
A third step of supplying at least a second silane-based gas into the processing chamber while heating the silicon substrate;
A fourth step of supplying at least a second etching gas into the processing chamber while heating the silicon substrate;
A method for manufacturing a semiconductor device, wherein the third step and the fourth step are repeated a plurality of times. The method for manufacturing a semiconductor device according to claim 1, wherein the supplying of each gas is performed in a state where the temperature in the processing chamber is stable. The method for manufacturing a semiconductor device according to claim 1, wherein the temperature is changed when shifting from the second step to the third step. The first silane-based gas is SiH ₂ Cl ₂ gas, the first etching gas is HCl gas, the second silane-based gas is SiH ₄ gas, and the second etching gas is Cl _The method of manufacturing a semiconductor device according to claim 1, wherein the gas is _two gases. The method for manufacturing a semiconductor device according to claim 1, wherein a film is formed in a thickness of 10 to 2000 mm in the second step. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the second step is performed by a single wafer type apparatus, and the third and subsequent steps are performed by a batch type apparatus. A processing chamber containing a silicon substrate;
Heating means for heating the silicon substrate;
A plurality of gas supply means for supplying a silane-based gas and an etching gas into the processing chamber;
Exhaust means for exhausting the atmosphere in the processing chamber;
Control means for controlling each means,
The control means supplies the first silane-based gas and the first etching gas by the first gas supply means in the first step, and the second silane-based gas by the second gas supply means in the second step. And a substrate processing apparatus that controls to supply the second etching gas. 9. The substrate according to claim 8, wherein the heating means is controlled to heat the silicon substrate at a first temperature in the first step and to heat the silicon substrate at a second temperature in the second step. Processing equipment. The substrate processing apparatus according to claim 8, wherein the heating unit is controlled to heat the first step and the second step at the same temperature.

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