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JP2009185330A - High-frequency plasma processing apparatus and method - Google Patents

High-frequency plasma processing apparatus and method Download PDF

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JP2009185330A
JP2009185330A JP2008025642A JP2008025642A JP2009185330A JP 2009185330 A JP2009185330 A JP 2009185330A JP 2008025642 A JP2008025642 A JP 2008025642A JP 2008025642 A JP2008025642 A JP 2008025642A JP 2009185330 A JP2009185330 A JP 2009185330A
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plasma processing
electrode
processing apparatus
plastic container
frequency
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JP5286553B2 (en
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Takeshi Aihara
武志 藍原
Masatake Aotani
正毅 青谷
Koji Yamada
幸司 山田
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Toyo Seikan Group Holdings Ltd
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Toyo Seikan Kaisha Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a processing apparatus which surely conducts electric discharge for plasma with a simple structure even without preparing a new installation space. <P>SOLUTION: A high-frequency plasma processing method 10a includes generating the plasma between an external electrode 12 and an internal electrode (a source gas supply pipe) 13, and conducting predetermined processing in a plastic container. The processing apparatus has a member 20 for forming a facing portion free from the interposition of the plastic container provided in between the high frequency electrode 12 and the ground electrode 13. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、高周波プラズマを発生させてプラスチック容器に所定の処理を行う高周波プラズマ処理装置及び高周波プラズマ処理方法に関し、特に、高周波電極とアース電極との間の放電により原料ガスをプラズマ化し、プラスチック容器の内面に蒸着膜を形成する高周波プラズマ処理装置及び高周波プラズマ処理方法に関する。   The present invention relates to a high-frequency plasma processing apparatus and a high-frequency plasma processing method for generating a high-frequency plasma to perform a predetermined process on a plastic container, and in particular, converting a raw material gas into a plasma by a discharge between a high-frequency electrode and a ground electrode. The present invention relates to a high-frequency plasma processing apparatus and a high-frequency plasma processing method for forming a vapor deposition film on the inner surface.

ペットボトルに代表されるプラスチック容器の内面に、酸化珪素等の無機酸化物を主体とするガスバリア性薄膜を形成する装置として、高周波プラズマ処理装置が知られている。
この高周波プラズマ処理装置は、図５に示すように、基台１１の上に載置されたほぼ円筒形状の外部電極１２と、この外部電極１２の内側中空部分に立設されたパイプ状の内部電極１３とを備えている。この内部電極１３は、原料ガス供給管を兼ねている。 A high-frequency plasma processing apparatus is known as an apparatus for forming a gas barrier thin film mainly composed of an inorganic oxide such as silicon oxide on the inner surface of a plastic container typified by a PET bottle.
As shown in FIG. 5, the high-frequency plasma processing apparatus includes a substantially cylindrical outer electrode 12 placed on a base 11 and a pipe-shaped inner electrode erected in an inner hollow portion of the outer electrode 12. And an electrode 13. The internal electrode 13 also serves as a source gas supply pipe.

外部電極１２の内側中空部分では、プラスチック容器が倒立した状態で収容されるとともに、上部開口部が蓋部材１４により閉塞される。
内部電極１３（原料ガス供給管）には、複数の原料ガス吹出口が穿設されており、原料ガスをプラスチック容器内に供給する。
外部電極１２には、整合器（図示せず）を介して高周波電源１５が接続されている。一方、内部電極１３は、アースに接地されている。 In the inner hollow portion of the external electrode 12, the plastic container is accommodated in an inverted state, and the upper opening is closed by the lid member 14.
The internal electrode 13 (source gas supply pipe) is provided with a plurality of source gas outlets for supplying source gas into the plastic container.
A high frequency power source 15 is connected to the external electrode 12 via a matching unit (not shown). On the other hand, the internal electrode 13 is grounded to the ground.

このような構成を有する高周波プラズマ処理装置は、次のような動作を行う。
外部電極１２の内側中空部分（処理空間）に、プラスチック容器を、倒立した状態で収容する。この処理空間から空気を抜いて真空状態にする。内部電極１３を通して、プラスチック容器の内部に原料ガスを供給する。高周波電源１５から高周波電力を印加することで、外部電極１２と内部電極１３との間が放電し、原料ガスがプラズマ化して、プラスチック容器の内面に薄膜が形成される。 The high-frequency plasma processing apparatus having such a configuration performs the following operation.
The plastic container is accommodated in an inverted state in the inner hollow portion (processing space) of the external electrode 12. The processing space is evacuated to a vacuum state. Source gas is supplied into the plastic container through the internal electrode 13. By applying high-frequency power from the high-frequency power supply 15, the space between the external electrode 12 and the internal electrode 13 is discharged, the source gas is turned into plasma, and a thin film is formed on the inner surface of the plastic container.

ところで、上述した高周波プラズマ処理装置においては、外部電極１２と内部電極１３との間にプラスチック容器が介在しているため、プラズマ放電しにくいか、あるいは、プラズマ放電が遅れるという問題があった。特に、小容量容器に対しては、電極間距離が小さくなるため、さらにプラズマ放電がしにくくなっていた。
この問題を解決する手法として、例えば、収容空間と排気手段とを連通する排気経路に、スパーク発生手段を設けることが提案されている（例えば、特許文献１参照。）。これにより、プラズマの不着火を防止できる。
特開２００５−３２５３９５号公報 By the way, in the above-described high-frequency plasma processing apparatus, since a plastic container is interposed between the external electrode 12 and the internal electrode 13, there is a problem that plasma discharge is difficult or plasma discharge is delayed. Particularly for small-capacity containers, since the distance between the electrodes is small, plasma discharge is further difficult.
As a technique for solving this problem, for example, it has been proposed to provide a spark generating means in an exhaust path that connects the accommodation space and the exhaust means (see, for example, Patent Document 1). Thereby, non-ignition of plasma can be prevented.
JP 2005-325395 A

しかしながら、特許文献１に記載の高周波プラズマ処理装置においては、次のような問題があった。
例えば、新たにスパーク発生手段を設けることとしたため、これを設置するスペースが必要となっていた。
また、そのスパーク発生手段を新たに接続するため、装置構成が複雑となっていた。
さらに、スパーク発生手段などを新たに設けるため、部品数が増加し、設備コストが高くなっていた。 However, the high-frequency plasma processing apparatus described in Patent Document 1 has the following problems.
For example, since a new spark generating means is provided, a space for installing the spark generating means is required.
Further, since the spark generating means is newly connected, the apparatus configuration is complicated.
Furthermore, since a spark generating means and the like are newly provided, the number of parts is increased and the equipment cost is increased.

本発明は、上記の問題を解決すべくなされたものであり、装置の外部に新設装置用のスペースを確保する必要がなく、しかも簡易な構成で、プラズマ放電を確実に行わせることが可能な高周波プラズマ処理装置及び高周波プラズマ処理方法の提供を目的とする。   The present invention has been made to solve the above problems, and it is not necessary to secure a space for a new apparatus outside the apparatus, and it is possible to reliably perform plasma discharge with a simple configuration. An object is to provide a high-frequency plasma processing apparatus and a high-frequency plasma processing method.

この目的を達成するため、本発明の高周波プラズマ処理装置は、プラスチック容器の内部又は外部の一方に高周波電極が、他方にアース電極が備えられた高周波プラズマ処理装置であって、高周波電極とアース電極との間に、プラスチック容器が介在しない対向部分を設けた構成としてある。   In order to achieve this object, a high-frequency plasma processing apparatus of the present invention is a high-frequency plasma processing apparatus provided with a high-frequency electrode inside or outside a plastic container and a ground electrode on the other side. Between the two, a configuration is provided in which a facing portion where no plastic container is interposed is provided.

また、本発明の高周波プラズマ処理方法は、高周波電極とアース電極との間でプラズマを発生させて、プラスチック容器に所定の処理を行う高周波プラズマ処理方法であって、高周波電極とアース電極の一部を、プラスチック容器を介在させないで対向して配置し、この対向した部分で放電を開始させ、高周波電極と前記アース電極との間でプラズマを発生させる方法としてある。   The high-frequency plasma processing method of the present invention is a high-frequency plasma processing method for generating a plasma between a high-frequency electrode and a ground electrode to perform a predetermined process on a plastic container, and a part of the high-frequency electrode and the ground electrode Is arranged so as to face each other without interposing a plastic container, and discharge is started at the opposed portions to generate plasma between the high-frequency electrode and the ground electrode.

本発明の高周波プラズマ処理装置及び高周波プラズマ処理方法によれば、高周波電極とアース電極の一部を、プラスチック容器を介在させないで対向させたことにより、それら電極間で放電が起こりやすくなる。
また、対向部分を設けるための部材を備えることにより、簡易な構成で、確実にプラズマ放電を行わせることができる。
さらに、対向部形成部材をプラスチック容器の口部近傍に備えることとしたため、特許文献１に記載のスパーク発生手段のように、高周波プラズマ処理装置の外部に新設装置用のスペースを設ける必要がない。 According to the high-frequency plasma processing apparatus and the high-frequency plasma processing method of the present invention, since a part of the high-frequency electrode and the ground electrode face each other without interposing a plastic container, discharge easily occurs between the electrodes.
Further, by providing a member for providing the facing portion, it is possible to reliably perform plasma discharge with a simple configuration.
Furthermore, since the opposing portion forming member is provided near the mouth of the plastic container, unlike the spark generating means described in Patent Document 1, it is not necessary to provide a space for a new device outside the high frequency plasma processing apparatus.

以下、本発明に係る高周波プラズマ処理装置及び高周波プラズマ処理方法の好ましい実施形態について、図面を参照して説明する。   Hereinafter, preferred embodiments of a high-frequency plasma processing apparatus and a high-frequency plasma processing method according to the present invention will be described with reference to the drawings.

［高周波プラズマ処理装置］
まず、本発明の高周波プラズマ処理装置の実施形態について、図１を参照して説明する。
同図は、本実施形態の高周波プラズマ処理装置の構成を示す全体断面図である。 [High-frequency plasma processing equipment]
First, an embodiment of the high-frequency plasma processing apparatus of the present invention will be described with reference to FIG.
FIG. 1 is an overall cross-sectional view showing the configuration of the high-frequency plasma processing apparatus of the present embodiment.

同図に示すように、本実施形態の高周波プラズマ処理装置１０ａは、基台１１と、外部電極１２と、内部電極１３（原料ガス供給管）と、対向部形成部材２０とを備えている。
ここで、基台１１は、高周波プラズマ処理装置１０ａの基礎部分であって、中央部には、縦方向に大きく貫通孔が設けてある。この貫通孔には、対向部形成部材２０が配置されるとともに、その中心に内部電極１３が立設している。 As shown in the figure, the high-frequency plasma processing apparatus 10a of this embodiment includes a base 11, an external electrode 12, an internal electrode 13 (raw material gas supply pipe), and a facing portion forming member 20.
Here, the base 11 is a basic part of the high-frequency plasma processing apparatus 10a, and a large through hole is provided in the center in the vertical direction. The counter part forming member 20 is disposed in the through hole, and the internal electrode 13 is erected at the center thereof.

外部電極１２は、ほぼ円筒形状に形成されており、内側面は、プラスチック容器の本体主要部よりやや大きめの相似形に形成されている。
この外部電極１２は、円筒形状の軸方向が垂直方向となるように基台１１の上に設置されている。この外部電極１２の内側中空部分は、処理空間を構成しており、プラスチック容器が倒立して収容される。また、上方開口部には、円盤状の蓋部材１４が載置される。
この外部電極１２には、整合器（図示せず）を介して高周波電源１５が接続されている。このため、外部電極１２は、高周波電極としての機能を有している。
なお、処理空間には、排気管を介して真空ポンプ等（いずれも図示せず）が接続されている。 The external electrode 12 is formed in a substantially cylindrical shape, and the inner surface is formed in a similar shape slightly larger than the main part of the main body of the plastic container.
The external electrode 12 is installed on the base 11 so that the axial direction of the cylindrical shape is a vertical direction. The inner hollow portion of the external electrode 12 constitutes a processing space, and the plastic container is stored upside down. A disc-shaped lid member 14 is placed in the upper opening.
A high frequency power source 15 is connected to the external electrode 12 via a matching unit (not shown). For this reason, the external electrode 12 has a function as a high frequency electrode.
Note that a vacuum pump or the like (both not shown) is connected to the processing space via an exhaust pipe.

内部電極１３は、外部電極１２の内側中空部分（プラスチック容器が収容されているときは、このプラスチック容器の内側）に立設したパイプ状部材である。この内部電極１３は、原料ガス供給管を兼ねており、内部電極（原料ガス供給管）の側面には、複数の原料ガス吹出口が穿設されており、ここから原料ガスがプラスチック容器の内部へ供給される。
なお、内部電極１３は、アースに接地されている。このため、内部電極１３は、アース電極としての機能を有している。 The internal electrode 13 is a pipe-like member erected on the inner hollow portion of the external electrode 12 (in the case of a plastic container being stored, the inner side of the plastic container). The internal electrode 13 also serves as a raw material gas supply pipe, and a plurality of raw material gas outlets are formed on the side surface of the internal electrode (raw material gas supply pipe). Supplied to.
The internal electrode 13 is grounded. For this reason, the internal electrode 13 has a function as a ground electrode.

対向部形成部材２０は、図１〜図３に示すように、縦方向断面がほぼ凸字状に形成された部材であって、円筒部２１と、基部２２とを有している。
円筒部２１は、肉薄の筒状に形成されており、軸方向が垂直方向になるように立設している。この円筒部２１の内側中空部分には、この円筒部２１の軸方向に沿って内部電極１３が立設している。
円筒部２１の上方には、装着部２３が形成されている。装着部２３は、図１、図３に示すように、倒立したプラスチック容器の口部が装着（嵌合）される部分である。つまり、装着部２３は、プラスチック容器を支持する機能を有している。 As shown in FIGS. 1 to 3, the facing portion forming member 20 is a member whose longitudinal section is formed in a substantially convex shape, and includes a cylindrical portion 21 and a base portion 22.
The cylindrical portion 21 is formed in a thin cylindrical shape, and stands upright so that the axial direction is a vertical direction. An internal electrode 13 is erected on the inner hollow portion of the cylindrical portion 21 along the axial direction of the cylindrical portion 21.
A mounting portion 23 is formed above the cylindrical portion 21. As shown in FIGS. 1 and 3, the mounting portion 23 is a portion to which the mouth portion of the inverted plastic container is mounted (fitted). That is, the mounting portion 23 has a function of supporting the plastic container.

また、装着部２３は、対向部形成部材２０の底部２４から所定の高さに位置している。つまり、装着された口部の端部と対向部形成部材２０の底部２４との間は、所定高さの空間が確保されている。
さらに、円筒部２１の側面には、一又は二以上の開口部２５が穿設されている。しかも、開口部２５は、装着部２３に隣接又は離間した位置（図１等においては、装着部２３の下方）に形成されている。
このように、対向部形成部材２０は、プラスチック容器の支持位置を高くして空間を確保するとともに、この空間に開口部２５を形成することで、外部電極１２と内部電極１３の一部にプラスチック容器や対向部形成部材２０の介在しない対向部分（図１の「Ｈ」で示した範囲）を設けている。 Further, the mounting portion 23 is located at a predetermined height from the bottom portion 24 of the facing portion forming member 20. That is, a space having a predetermined height is secured between the end of the mounted mouth and the bottom 24 of the facing portion forming member 20.
Further, one or two or more openings 25 are formed in the side surface of the cylindrical portion 21. Moreover, the opening 25 is formed at a position adjacent to or spaced from the mounting portion 23 (below the mounting portion 23 in FIG. 1 and the like).
Thus, the opposing portion forming member 20 secures a space by raising the support position of the plastic container, and forms the opening 25 in this space, so that the plastic is formed on a part of the external electrode 12 and the internal electrode 13. An opposing portion (a range indicated by “H” in FIG. 1) without the container or the opposing portion forming member 20 is provided.

なお、本実施形態においては、開口部２５が四つ穿設されているが、四つに限るものではなく、任意の数だけ穿設させることができる。
また、開口部２５の形状は、図２、図３においては、円形としてあるが、円形に限るものではなく、例えば、方形、多角形、楕円形など、任意の形状とすることができる。
さらに、開口部２５の大きさ（径）は、本実施形態においては、直径５ｍｍ以上とするが、５ｍｍ以上に限るものではなく、任意の大きさとすることができる。 In the present embodiment, four openings 25 are formed. However, the number of openings 25 is not limited to four, and an arbitrary number can be formed.
The shape of the opening 25 is a circle in FIGS. 2 and 3, but is not limited to a circle, and may be an arbitrary shape such as a square, a polygon, or an ellipse.
Furthermore, the size (diameter) of the opening 25 is 5 mm or more in the present embodiment, but is not limited to 5 mm or more, and can be any size.

基部２２は、立設した円筒部２１の外周下方に沿って肉厚形成された部分である。
この基部２２の直径は、基台１１の内径（貫通孔の径）とほぼ同じになっている。このため、対向部形成部材２０は、基台１１の貫通孔に嵌合可能になっている。
また、基部２２の外周には、Ｏリング２７が環設されている。対向部形成部材２０を基台１１の貫通孔に配置したとき、Ｏリング２７の露出面は、基台１１の内側面（貫通孔の側面）に接触する。これにより、処理空間の気密性を保持できる。
なお、基台１１の貫通孔の径が小さい場合には、基部２２の肉厚を薄くするか、基部２２自体を省略することもできる。 The base portion 22 is a portion that is formed thick along the lower periphery of the upright cylindrical portion 21.
The diameter of the base portion 22 is substantially the same as the inner diameter (the diameter of the through hole) of the base 11. For this reason, the facing portion forming member 20 can be fitted into the through hole of the base 11.
An O-ring 27 is provided around the outer periphery of the base portion 22. When the facing portion forming member 20 is disposed in the through hole of the base 11, the exposed surface of the O-ring 27 is in contact with the inner side surface (side surface of the through hole) of the base 11. Thereby, the airtightness of the processing space can be maintained.
In addition, when the diameter of the through-hole of the base 11 is small, the thickness of the base 22 can be made thin or the base 22 itself can be omitted.

［高周波プラズマ処理方法］
次に、本実施形態の高周波プラズマ処理装置の動作（高周波プラズマ処理方法）について、図１及び図２を参照して説明する。
外部電極１２の内側中空部分（処理空間）に、プラスチック容器が倒立して収容される。このプラスチック容器の口部が、対向部形成部材２０の装着部２３に装着される。そして、外部電極１２の上方開口に蓋部材１４が載置される。 [High-frequency plasma processing method]
Next, the operation of the high-frequency plasma processing apparatus of this embodiment (high-frequency plasma processing method) will be described with reference to FIG. 1 and FIG.
A plastic container is inverted and accommodated in the inner hollow portion (processing space) of the external electrode 12. The mouth portion of the plastic container is attached to the attachment portion 23 of the facing portion forming member 20. Then, the lid member 14 is placed in the upper opening of the external electrode 12.

ここで、プラスチック容器は、対向部形成部材２０の装着部２３よりも下方に進入できない。一方、装着部２３の下方には開口部２５が形成されている。このため、外部電極１２と内部電極１３とは、開口部２５が形成された空間において、プラスチック容器や対向部形成部材２０の介在なく対向する。   Here, the plastic container cannot enter below the mounting portion 23 of the facing portion forming member 20. On the other hand, an opening 25 is formed below the mounting portion 23. For this reason, the external electrode 12 and the internal electrode 13 are opposed to each other in the space in which the opening 25 is formed without the plastic container or the facing portion forming member 20 interposed therebetween.

次いで、真空ポンプが起動して、処理空間から空気が抜かれる。これにより、処理空間内が真空状態になる。
続いて、原料ガスが、内部電極１３を介して、プラスチック容器の内部に供給される。
さらに、高周波電源１５から外部電極１２に高周波電力が印加される。これにより、外部電極１２と内部電極１３との間であって対向部形成部材２０の開口部２５が形成された空間において最初の放電が起こり、その後、外部電極１２と内部電極１３との間で放電する。そして、処理空間内でプラズマが発生して、プラスチック容器の内面に蒸着膜が形成される。 The vacuum pump is then activated and air is evacuated from the processing space. As a result, the processing space is in a vacuum state.
Subsequently, the source gas is supplied into the plastic container via the internal electrode 13.
Further, high frequency power is applied from the high frequency power supply 15 to the external electrode 12. Thereby, the first discharge occurs in the space between the external electrode 12 and the internal electrode 13 and in which the opening 25 of the facing portion forming member 20 is formed, and then between the external electrode 12 and the internal electrode 13. Discharge. Then, plasma is generated in the processing space, and a deposited film is formed on the inner surface of the plastic container.

［放電試験］
次に、図１に示す高周波プラズマ処理装置（１０ａ）と、図５に示す高周波プラズマ処理装置（１００）とを用いて行った放電試験について、説明する。
装置１０ａは、対向部形成部材２０が備えられている（開口部２５は、円形で、直径は、５ｍｍ）。一方、装置１００は、対向部形成部材２０が備えられていない。
それら装置１０ａ、装置１００において、それぞれプラスチック容器を収容し、蓋部材を載置し、処理空間を真空状態にし、原料ガスを供給して、外部電極１２に高周波電力を印加した。 [Discharge test]
Next, a discharge test performed using the high-frequency plasma processing apparatus (10a) shown in FIG. 1 and the high-frequency plasma processing apparatus (100) shown in FIG. 5 will be described.
The device 10a is provided with a facing portion forming member 20 (the opening 25 is circular and has a diameter of 5 mm). On the other hand, the apparatus 100 is not provided with the facing portion forming member 20.
In these apparatuses 10 a and 100, plastic containers were accommodated, a lid member was placed, the processing space was evacuated, source gas was supplied, and high frequency power was applied to the external electrode 12.

その結果、放電について、次のデータが得られた。
装置１０ａ ・・・ 放電回数９回／試技１０回
装置１００ ・・・ 放電回数０回／試技１０回 As a result, the following data was obtained for the discharge.
Device 10a: Number of discharges 9 times / Trial 10 times Device 100: Number of discharges 0 times / Trial 10 times

このように、装置１００では、回数を重ねてもまったく放電しなかったものの、装置１０ａでは、ほとんどの試技で放電がなされた。
このことから、対向部形成部材２０を備えて、外部電極１２と内部電極１３との対向部分を設けたことにより、放電しやすくなることが確認された。
また、装置１０ａを用いて形成された蒸着膜のバリア性能については、問題がないことが確認された。 Thus, although the device 100 did not discharge at all even after repeated times, the device 10a was discharged in most trials.
From this, it was confirmed that by providing the facing portion forming member 20 and providing the facing portion between the external electrode 12 and the internal electrode 13, it is easy to discharge.
Moreover, it was confirmed that there is no problem about the barrier performance of the vapor deposition film formed using the apparatus 10a.

以上説明したように、本実施形態の高周波プラズマ処理装置及び高周波プラズマ処理方法によれば、高周波電極とアース電極との一部にプラスチック容器の介在しない対向部分を設けたことで、それら電極間で放電しやすくなる。
また、対向部形成部材を備えることとしたため、簡易な構成で、プラズマ放電を確実に行わせることができる。これにより、酸素ガス、水蒸気、炭酸ガス等の透過を阻止するガスバリア性に優れたプラスチック容器を提供できる。 As described above, according to the high-frequency plasma processing apparatus and the high-frequency plasma processing method of the present embodiment, by providing an opposing portion where a plastic container is not interposed between a part of the high-frequency electrode and the ground electrode, It becomes easy to discharge.
In addition, since the facing portion forming member is provided, plasma discharge can be reliably performed with a simple configuration. Thereby, the plastic container excellent in gas barrier property which blocks | prevents permeation | transmission of oxygen gas, water vapor | steam, carbon dioxide gas, etc. can be provided.

以上、本発明の高周波プラズマ処理装置及び高周波プラズマ処理方法の好ましい実施形態について説明したが、本発明に係る高周波プラズマ処理装置及び高周波プラズマ処理方法は上述した実施形態にのみ限定されるものではなく、本発明の範囲で種々の変更実施が可能であることは言うまでもない。
例えば、上述した実施形態では、対向部形成部材の形状を凸形状としたが、この形状に限るものではなく、例えば、円柱形、円錐形、截頭円錐形、その他任意の形状とすることができる。 The preferred embodiments of the high-frequency plasma processing apparatus and the high-frequency plasma processing method of the present invention have been described above. However, the high-frequency plasma processing apparatus and the high-frequency plasma processing method according to the present invention are not limited to the above-described embodiments. It goes without saying that various modifications can be made within the scope of the present invention.
For example, in the above-described embodiment, the shape of the facing portion forming member is a convex shape. However, the shape is not limited to this shape. it can.

また、上述した実施形態では、プラスチック容器の内面に薄膜を形成する内側蒸着用の高周波プラズマ処理装置について説明したが、内側蒸着用に限るものではなく、図４に示すように、外側蒸着用の高周波プラズマ処理装置１０ｂにも適用できる。
この外側蒸着用の高周波プラズマ処理装置１０ｂは、外部電極１２が接地され、内部電極１３が高周波電源１５に接続されている。この高周波プラズマ処理装置１０ｂを用いると、プラスチック容器の外側面に蒸着膜が形成される。 In the above-described embodiment, the high-frequency plasma processing apparatus for inner vapor deposition that forms a thin film on the inner surface of the plastic container has been described. However, the present invention is not limited to inner vapor deposition, It can also be applied to the high-frequency plasma processing apparatus 10b.
In the high frequency plasma processing apparatus 10b for outer vapor deposition, the external electrode 12 is grounded, and the internal electrode 13 is connected to a high frequency power source 15. When this high-frequency plasma processing apparatus 10b is used, a vapor deposition film is formed on the outer surface of the plastic container.

本発明は、高周波電極とアース電極との間の放電に関する発明であるため、それら各電極を用いた高周波プラズマ処理装置に利用可能である。   Since the present invention relates to discharge between the high-frequency electrode and the ground electrode, it can be used for a high-frequency plasma processing apparatus using these electrodes.

本発明の実施形態における高周波プラズマ処理装置の構成を示す正面断面図である。It is front sectional drawing which shows the structure of the high frequency plasma processing apparatus in embodiment of this invention. 対向部形成部材の構造を示す正面断面図である。It is front sectional drawing which shows the structure of an opposing part formation member. 対向部形成部材の構造を示す上方斜視図である。It is an upper perspective view which shows the structure of an opposing part formation member. 外側蒸着用の高周波プラズマ処理装置の構成を示す正面断面図である。It is front sectional drawing which shows the structure of the high frequency plasma processing apparatus for outer side vapor deposition. 従前の高周波プラズマ処理装置の構成を示す正面断面図である。It is front sectional drawing which shows the structure of the conventional high frequency plasma processing apparatus.

符号の説明Explanation of symbols

１０ａ、１０ｂ 高周波プラズマ処理装置
１１ 基台
１２ 外部電極
１３ 内部電極（原料ガス供給管）
１５ 高周波電源
２０ 対向部形成部材
２１ 円筒部
２３ 装着部
２５ 開口部
２６ 開口形成部 10a, 10b High-frequency plasma processing apparatus 11 Base 12 External electrode 13 Internal electrode (raw material gas supply pipe)
DESCRIPTION OF SYMBOLS 15 High frequency power supply 20 Opposing part formation member 21 Cylindrical part 23 Mounting part 25 Opening part 26 Opening formation part

Claims (5)

プラスチック容器の内部又は外部の一方に高周波電極が、他方にアース電極が備えられた高周波プラズマ処理装置であって、
前記高周波電極と前記アース電極との間に、前記プラスチック容器が介在しない対向部分を設けた
ことを特徴とする高周波プラズマ処理装置。 A high-frequency plasma processing apparatus provided with a high-frequency electrode inside or outside a plastic container and a ground electrode on the other side,
An opposing portion where the plastic container is not interposed is provided between the high-frequency electrode and the ground electrode. 前記対向部分に、開口部の形成された対向部形成部材を備えた
ことを特徴とする請求項１記載の高周波プラズマ処理装置。 The high-frequency plasma processing apparatus according to claim 1, further comprising a facing portion forming member having an opening formed in the facing portion. 前記対向部形成部材が、前記プラスチック容器の口部が装着される装着部を有し、
前記開口部が、前記装着部に隣接又は離間した位置に形成された
ことを特徴とする請求項２記載の高周波プラズマ処理装置。 The facing portion forming member has a mounting portion to which a mouth portion of the plastic container is mounted;
The high-frequency plasma processing apparatus according to claim 2, wherein the opening is formed at a position adjacent to or spaced from the mounting portion. 前記装着部が、前記開口部よりも上方に位置し、
倒立した状態のプラスチック容器の口部が、前記装着部に装着された
ことを特徴とする請求項３記載の高周波プラズマ処理装置。 The mounting portion is located above the opening;
The high-frequency plasma processing apparatus according to claim 3, wherein the mouth portion of the inverted plastic container is attached to the attachment portion. 高周波電極とアース電極との間でプラズマを発生させて、プラスチック容器に所定の処理を行う高周波プラズマ処理方法であって、
前記高周波電極と前記アース電極の一部を、前記プラスチック容器を介在させないで対向して配置し、この対向した部分で放電を開始させ、前記高周波電極と前記アース電極との間でプラズマを発生させる
ことを特徴とする高周波プラズマ処理方法。 A high frequency plasma processing method for generating a plasma between a high frequency electrode and a ground electrode and performing a predetermined process on a plastic container,
A part of the high-frequency electrode and the ground electrode are arranged to face each other without interposing the plastic container, discharge is started at the opposed part, and plasma is generated between the high-frequency electrode and the ground electrode. A high-frequency plasma processing method.
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