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JP2009099715A - Light emitting device - Google Patents

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JP2009099715A
JP2009099715A JP2007268854A JP2007268854A JP2009099715A JP 2009099715 A JP2009099715 A JP 2009099715A JP 2007268854 A JP2007268854 A JP 2007268854A JP 2007268854 A JP2007268854 A JP 2007268854A JP 2009099715 A JP2009099715 A JP 2009099715A
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light emitting
electrode
emitting device
led chip
light
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Masahito Takigahira
将人 瀧ヶ平
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Fujikura Ltd
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Fujikura Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device having a plurality of LED chips mounted on a substrate, which is a high-luminous-flux and high-efficiency light emitting device capable of efficiently guiding light from the LED chips. <P>SOLUTION: The light emitting device comprises the mounting substrate on which the light emitting diode chips are mounted, electrodes formed on the surface of the mounting substrate so as to supply electric power to the light emitting diode chips, and the plurality of light emitting diode chips mounted on the electrodes. The electrodes on which adjacent light emitting diode chips are mounted are different in height. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、複数の発光ダイオード（以下、ＬＥＤと記す。）チップを基板に実装した発光装置に関する。   The present invention relates to a light emitting device in which a plurality of light emitting diode (hereinafter referred to as LED) chips are mounted on a substrate.

現在のＬＥＤチップ１個あたりの明るさ（以下、全光束と記す。）は、一般照明光源の数百分の一程度と小さい。そのため、一般照明用途を狙った従来のＬＥＤ発光装置では、全光束を向上させるため、一つの実装基板内に複数個のＬＥＤチップを高密度に並べて実装する検討がなされている。
例えば、特許文献１では、図１に示すように、六角形の実装基板１上に形成された電極上２に、同一形状の４個のＬＥＤチップＡ、Ｂ、Ｃ、Ｄを近接させて実装している。このように、複数のＬＥＤチップを近接させて実装することで、小型で高光束装置を検討している。 The current brightness per LED chip (hereinafter referred to as the total luminous flux) is as small as one hundredth of that of a general illumination light source. For this reason, in conventional LED light-emitting devices aimed at general lighting applications, in order to improve the total luminous flux, studies are being made to arrange a plurality of LED chips on a single mounting substrate in high density.
For example, in Patent Document 1, as shown in FIG. 1, four LED chips A, B, C, and D having the same shape are mounted close to an electrode 2 formed on a hexagonal mounting substrate 1. is doing. In this way, a small and high luminous flux device is being studied by mounting a plurality of LED chips close to each other.

また、特許文献２には、図３に示すように、実装基板３上に複数のＬＥＤチップ４を異なる高さに実装した構造が提案されている。
特開２００３−８０８３号公報 特開２００５−１５８９５８号公報 Patent Document 2 proposes a structure in which a plurality of LED chips 4 are mounted at different heights on a mounting substrate 3 as shown in FIG.
JP 2003-8083 A JP 2005-158958 A

しかしながら、前述した従来技術には、次のような問題があった。
特許文献１に開示されたＬＥＤ実装構造では、図２に示すように、ＬＥＤチップＥの側面から出る光が、隣接するＬＥＤチップＦに吸収されてしまい、全光束が低下してしまうという問題があった。ＬＥＤチップは、サファイヤなど透明な基材上に発光層を形成する構造が一般的であり、チップ全面から発光するという特徴がある。特許文献１に開示された構造では、ＬＥＤチップ同士が近接して実装されているため、ＬＥＤチップ側面から出射した光が隣り合うＬＥＤチップに入射する。チップ基材の屈折率は空気と比べて大きいため、入射光はチップ内に閉じ込められ、吸収される。 However, the above-described conventional technique has the following problems.
In the LED mounting structure disclosed in Patent Document 1, as shown in FIG. 2, the light emitted from the side surface of the LED chip E is absorbed by the adjacent LED chip F, and the total luminous flux is reduced. there were. The LED chip generally has a structure in which a light emitting layer is formed on a transparent base material such as sapphire, and has a feature that light is emitted from the entire surface of the chip. In the structure disclosed in Patent Document 1, since the LED chips are mounted close to each other, the light emitted from the side surface of the LED chip enters the adjacent LED chip. Since the refractive index of the chip substrate is larger than that of air, incident light is confined in the chip and absorbed.

特許文献２に開示されたＬＥＤ実装構造では、前述した問題を解決するため、ＬＥＤチップ４同士が異なる高さとなるように実装しているので、ＬＥＤチップ側面から出る光は、隣り合うＬＥＤチップに吸収されない。
しかし、特許文献２に開示されたＬＥＤ実装構造を実施するには、新たに二つの問題があった。一つは、実装基板３が複雑な凹凸形状をしているため、実装基板３の加工が難しく、コストが高いという問題があった。もう一つは、実装基板３が複雑な凹凸をもっているため、基板表面上に電極を作製できないという問題があった。実装基板上には、ＬＥＤチップに電極を供給するための電極が必要であるが、従来の電極作製方法は、平坦な基板上への電極作製を前提としているため、凹凸構造をもつ基板に対して、電極を作製できなかった。 In the LED mounting structure disclosed in Patent Document 2, since the LED chips 4 are mounted so as to have different heights in order to solve the above-described problem, the light emitted from the side surfaces of the LED chips is directed to the adjacent LED chips. Not absorbed.
However, in order to implement the LED mounting structure disclosed in Patent Document 2, there are two new problems. One problem is that since the mounting substrate 3 has a complicated uneven shape, it is difficult to process the mounting substrate 3 and the cost is high. Another problem is that the mounting substrate 3 has complicated irregularities, and thus electrodes cannot be produced on the substrate surface. An electrode for supplying an electrode to the LED chip is required on the mounting substrate, but the conventional electrode manufacturing method is based on the premise that the electrode is manufactured on a flat substrate. Thus, the electrode could not be produced.

本発明は、前記事情に鑑みてなされ、複数のＬＥＤチップを基板に実装した発光装置において、ＬＥＤチップからの光を効率よく導出できる高光束・高効率の発光装置の提供を目的とする。   The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a high luminous flux and high efficiency light emitting device capable of efficiently deriving light from an LED chip in a light emitting device having a plurality of LED chips mounted on a substrate.

前記目的を達成するため、本発明は、ＬＥＤチップを搭載するための実装基板と、ＬＥＤチップに電力を供給するため前記実装基板表面に作製された電極と、前記電極上に搭載された複数のＬＥＤチップとからなり、隣り合うＬＥＤチップが搭載された電極の高さが異なっていることを特徴とする発光装置を提供する。   In order to achieve the above object, the present invention provides a mounting substrate for mounting an LED chip, an electrode fabricated on the surface of the mounting substrate for supplying power to the LED chip, and a plurality of electrodes mounted on the electrode. Provided is a light emitting device comprising an LED chip and having different heights of electrodes on which adjacent LED chips are mounted.

本発明の発光装置において、ＬＥＤチップ側面と、隣接する電極側面とを非平行としたことが好ましい。   In the light emitting device of the present invention, it is preferable that the LED chip side surface and the adjacent electrode side surface be non-parallel.

本発明の発光装置において、ＬＥＤチップ側面と、隣接する電極側面とのなす角度を３５度〜５５度の範囲としたことが好ましい。   In the light emitting device of the present invention, it is preferable that the angle formed between the side surface of the LED chip and the side surface of the adjacent electrode is in the range of 35 degrees to 55 degrees.

本発明の発光装置において、電極の上面幅を下面幅より狭くしたことが好ましい。   In the light emitting device of the present invention, it is preferable that the upper surface width of the electrode is narrower than the lower surface width.

本発明の発光装置において、電極側面が反射面とされたことが好ましい。   In the light emitting device of the present invention, it is preferable that the electrode side surface be a reflecting surface.

本発明の発光装置において、ＬＥＤチップが透明樹脂で封止され、この透明樹脂中に、ＬＥＤチップの発光波長により励起され、ＬＥＤチップの発光波長と異なる波長の光を出す蛍光体を含むことが好ましい。   In the light emitting device of the present invention, the LED chip is sealed with a transparent resin, and the transparent resin includes a phosphor that is excited by the light emission wavelength of the LED chip and emits light having a wavelength different from the light emission wavelength of the LED chip. preferable.

以上説明したように、本発明によれば、隣接するＬＥＤチップの実装された電極の高さが異なるので、ＬＥＤチップ側面から出た光が隣接するＬＥＤチップに吸収されるのを防止でき、発光装置内における光損失を低減できる。従って、本発明によれば、高光束・高効率な発光装置を実現できる。
また、ＬＥＤチップ側面と隣接する電極側面とを非平行としたので、ＬＥＤチップ側面から出射し、隣接する電極で反射された光の一部がＬＥＤチップに戻り吸収されることを防止でき、発光装置内における光損失を低減できるので、高光束・高効率な発光装置を実現できる。
さらに、電極側面に反射面を設けたので、ＬＥＤチップ側面から出た光を装置正面に反射でき、発光装置外部に取り出される光の量が大きくなることから、より高光束・高効率な発光装置を実現できる。 As described above, according to the present invention, since the height of the electrode on which the adjacent LED chip is mounted is different, it is possible to prevent the light emitted from the side surface of the LED chip from being absorbed by the adjacent LED chip and to emit light. Optical loss in the apparatus can be reduced. Therefore, according to the present invention, a light emitting device with high luminous flux and high efficiency can be realized.
Also, since the LED chip side surface and the adjacent electrode side surface are made non-parallel, it is possible to prevent a part of the light emitted from the LED chip side surface and reflected by the adjacent electrode from being returned to the LED chip and absorbed. Since light loss in the device can be reduced, a light emitting device with high luminous flux and high efficiency can be realized.
Furthermore, since the reflecting surface is provided on the electrode side surface, the light emitted from the LED chip side surface can be reflected to the front of the device, and the amount of light extracted outside the light emitting device is increased. Can be realized.

以下、図面を参照して本発明の実施形態を説明する。
図４は、本発明の発光装置の第１実施形態を示す図であり、図４（ａ）は発光装置１０の平面図、（ｂ）は（ａ）中のＸ−Ｘ’部断面図である。図４中、符号１０は発光装置、１１は実装基板、１２は反射枠、１３は電極、１４はＬＥＤチップ、１５はワイヤ配線、１６は封止樹脂である。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
4A and 4B are diagrams showing a first embodiment of the light-emitting device of the present invention. FIG. 4A is a plan view of the light-emitting device 10, and FIG. 4B is a cross-sectional view taken along the line XX ′ in FIG. is there. In FIG. 4, reference numeral 10 denotes a light emitting device, 11 denotes a mounting substrate, 12 denotes a reflection frame, 13 denotes an electrode, 14 denotes an LED chip, 15 denotes wire wiring, and 16 denotes a sealing resin.

本実施形態の発光装置１０は、ＬＥＤチップ１４を搭載するための平坦な実装基板１１と、ＬＥＤチップ１４に電力を供給するため前記実装基板１１表面に作製された電極１３と、前記電極１３上に搭載された複数のＬＥＤチップ１４と、前記ＬＥＤチップ１４と電極１３とを電気的に接続するワイヤ配線１５と、前記実装基板１１上において複数のＬＥＤチップ１４を囲うように配置されＬＥＤチップ１４から出る光を正面方向に出射させる反射枠１２内に設けられた封止樹脂１６とを備えて構成されている。本実施形態の発光装置１０は、隣り合うＬＥＤチップ１４が実装された電極１３の高さが異なっていることを特徴としている。   The light emitting device 10 of the present embodiment includes a flat mounting substrate 11 for mounting the LED chip 14, an electrode 13 formed on the surface of the mounting substrate 11 for supplying power to the LED chip 14, and the electrode 13 A plurality of LED chips 14 mounted on the substrate, a wire wiring 15 for electrically connecting the LED chip 14 and the electrode 13, and the LED chip 14 disposed on the mounting substrate 11 so as to surround the plurality of LED chips 14. And a sealing resin 16 provided in the reflection frame 12 that emits light emitted from the light in the front direction. The light emitting device 10 of this embodiment is characterized in that the heights of the electrodes 13 on which the adjacent LED chips 14 are mounted are different.

この発光装置１０に搭載されたＬＥＤチップ１４としては、赤色ＬＥＤチップや緑色ＬＥＤチップ、青色ＬＥＤチップ、紫色ＬＥＤチップなどを用いることができる。また、前記ＬＥＤチップを何種類か複合して用いても良い。さらに、ＬＥＤチップ１４は、透明樹脂で封止され、この透明樹脂中に、ＬＥＤチップの発光波長により励起され、ＬＥＤチップの発光波長と異なる波長の光を出す蛍光体を含むものであってもよい。このＬＥＤチップと蛍光体との組み合わせの典型例は、青色ＬＥＤチップと黄色発光蛍光体（又は黄色発光蛍光体と赤色発光蛍光体との混合物）との組み合わせによる白色ＬＥＤチップなどが挙げられる。   As the LED chip 14 mounted on the light emitting device 10, a red LED chip, a green LED chip, a blue LED chip, a purple LED chip, or the like can be used. Further, several types of the LED chips may be used in combination. Further, the LED chip 14 may be sealed with a transparent resin, and the transparent resin may include a phosphor that is excited by the emission wavelength of the LED chip and emits light having a wavelength different from the emission wavelength of the LED chip. Good. A typical example of the combination of the LED chip and the phosphor includes a white LED chip by a combination of a blue LED chip and a yellow light emitting phosphor (or a mixture of a yellow light emitting phosphor and a red light emitting phosphor).

また実装基板１１としては、ガラスエポキシ基板やセラミック基板、ホーロー基板など、従来良く用いられている絶縁基板が使用できる。実装基板の形状や寸法は特に限定されない。
また反射枠１２は、金属製でも樹脂製でも良く、ＬＥＤチップ１４の発光波長および可視光波長域で反射率の高いものが望ましい。
また、封止樹脂１６には、ＬＥＤチップ１４の発光波長および可視光波長域で透明なものが望ましく、エポキシ樹脂やシリコーン樹脂を用いるのが一般的である。
また、ワイヤ配線１５には、金ワイヤやアルミワイヤ、銅ワイヤなどが用いられる。 In addition, as the mounting substrate 11, an insulating substrate that is often used conventionally, such as a glass epoxy substrate, a ceramic substrate, and an enamel substrate can be used. The shape and dimensions of the mounting substrate are not particularly limited.
The reflection frame 12 may be made of metal or resin, and it is desirable that the reflection frame 12 has a high reflectance in the emission wavelength and visible light wavelength regions of the LED chip 14.
Further, the sealing resin 16 is desirably transparent in the light emission wavelength and visible light wavelength regions of the LED chip 14, and an epoxy resin or a silicone resin is generally used.
For the wire wiring 15, a gold wire, an aluminum wire, a copper wire, or the like is used.

次に、本発明の特徴である高さの異なる電極１３の作製方法について述べる。高さの異なる電極１３は、実装基板１１が平坦であるので、従来の電極形成技術を応用して作製する。   Next, a method for producing the electrodes 13 having different heights, which is a feature of the present invention, will be described. Since the mounting substrate 11 is flat, the electrodes 13 having different heights are manufactured by applying a conventional electrode forming technique.

はじめに、スクリーン印刷を用いた場合の電極作製方法を説明する。まず、基板上に作製する全ての電極をパターニングした印刷版Ａと、電極高さの高いほうだけをパターニングした印刷版Ｂを用意する。先に、実装基板に対して印刷版Ａを合わせ、スクリーン印刷機で１層目の電極を印刷する。次に、１層目の電極を電機炉で焼結させる。次に、焼結を終えた基板に対して印刷版Ｂを合わせ、スクリーン印刷機で２層目の電極を印刷し、焼結する。一度のスクリーン印刷で印刷できる電極厚は数μｍ〜数十μｍであり、印刷版の樹脂膜の厚みである程度制御できる。電極Ｂの高さが電極ＡとＬＥＤチップの高さの和よりも高くなるまで電極印刷を繰返し、厚さの異なる電極を作製する。   First, an electrode manufacturing method using screen printing will be described. First, a printing plate A in which all electrodes to be formed on the substrate are patterned and a printing plate B in which only the electrode having a higher height is patterned are prepared. First, the printing plate A is aligned with the mounting substrate, and the first-layer electrode is printed by a screen printer. Next, the first layer electrode is sintered in an electric furnace. Next, the printing plate B is aligned with the sintered substrate, and the second layer electrode is printed by a screen printer and sintered. The electrode thickness that can be printed by one screen printing is several μm to several tens μm, and can be controlled to some extent by the thickness of the resin film of the printing plate. Electrode printing is repeated until the height of the electrode B becomes higher than the sum of the height of the electrode A and the LED chip, and electrodes having different thicknesses are produced.

高さの異なる電極は、ディスペンサを使用して作製することもできる。電極材の銀ペーストをディスペンサで基板に塗布し、電極を描画する。電極の高さは、ディスペンサのノズル径を太くしたり、電極を重ね塗りしたりすることにより調整できる。   Electrodes with different heights can also be made using a dispenser. A silver paste of electrode material is applied to the substrate with a dispenser, and an electrode is drawn. The height of the electrode can be adjusted by increasing the nozzle diameter of the dispenser or by recoating the electrode.

また、従来のガラスエポキシ基板の電極形成方法を応用しても良い。始めに、ガラスエポキシ基板上に従来通りの形成方法で全ての電極を形成する。次に、低くしたい電極をマスキングし、高くしたい電極だけ露出させた状態でメッキ処理を行う。電極の高さはメッキ処理の時間で制御することができる。これにより、高さの異なる電極が作製できる。   Moreover, you may apply the conventional electrode formation method of a glass epoxy board | substrate. First, all electrodes are formed on a glass epoxy substrate by a conventional forming method. Next, the electrode to be lowered is masked, and plating is performed with only the electrode to be raised exposed. The height of the electrode can be controlled by the time of the plating process. Thereby, electrodes having different heights can be produced.

この発光装置１０では、図４（ｂ）に示すように、ＬＥＤチップＢが搭載された電極１３と、それに隣接するＬＥＤチップＡ、Ｃに搭載された電極１３の高さが異なっている。ＬＥＤチップＢから発した光は、近接するＬＥＤチップＡ、Ｃに吸収されることなく外部に取り出される。したがって、従来例と比べて発光装置内の光損失が低減し、小型で高光束・高効率の照明器具を実現できる。   In this light emitting device 10, as shown in FIG. 4 (b), the height of the electrode 13 on which the LED chip B is mounted and the electrode 13 mounted on the LED chips A and C adjacent thereto are different. The light emitted from the LED chip B is extracted outside without being absorbed by the adjacent LED chips A and C. Therefore, light loss in the light emitting device is reduced as compared with the conventional example, and a small, high luminous flux and high efficiency lighting fixture can be realized.

図５は、本発明の発光装置の第２実施形態を示す図であり、図５（ａ）は発光装置２０の平面図、（ｂ）は（ａ）中のＸ−Ｘ’部断面図、（ｃ）は要部拡大平面図である。
本実施形態の発光装置２０は、ＬＥＤチップ１４の実装方向が異なること以外は、前述した第１実施形態の発光装置１０と同様の構成要素を備えて構成され、同一の構成要素には同一符号を付している。本実施形態の発光装置２０は、ＬＥＤチップ１４側面を隣接する電極１３側面に対して非平行に傾けることを特徴とする。 5A and 5B are diagrams showing a second embodiment of the light-emitting device of the present invention. FIG. 5A is a plan view of the light-emitting device 20, and FIG. 5B is a cross-sectional view taken along the line XX ′ in FIG. (C) is an enlarged plan view of a main part.
The light emitting device 20 of the present embodiment is configured to include the same components as those of the light emitting device 10 of the first embodiment described above, except that the mounting direction of the LED chip 14 is different. Is attached. The light emitting device 20 of the present embodiment is characterized in that the side surface of the LED chip 14 is tilted non-parallel to the side surface of the adjacent electrode 13.

本実施形態によれば、前述した第１実施形態の発光装置１０と同じく、ＬＥＤチップＢが搭載された電極と、それに隣接するＬＥＤチップＡ、Ｃに搭載された電極の高さが異なっていることから、ＬＥＤチップＢから発した光は、近接するＬＥＤチップＡ、Ｃに吸収されることなく外部に取り出され、発光装置内の光損失を停電することができる。加えて、前記第１実施形態の発光装置１０では、ＬＥＤチップＢ側面から出射し、隣接する電極の側面で反射された光の一部がＬＥＤチップＢに戻り、吸収されていたが、本実施形態の発光装置２０によれば、ＬＥＤチップが電極に対して非平行に傾いているため、ＬＥＤチップＢ自身側面から出射した光は、電極側面でＬＥＤチップＢとは別な方向に反射され、ＬＥＤチップＢ自身による光吸収を防ぐことができるという効果がある。したがって、小型で高光束・高効率な発光装置を実現できる。なお、このＬＥＤチップ側面の角度は、電極の面に対して３５度〜５５度の範囲が好ましく、４５度程度がより好ましい。   According to the present embodiment, as in the light emitting device 10 of the first embodiment described above, the height of the electrode on which the LED chip B is mounted is different from the height of the electrode mounted on the LED chips A and C adjacent thereto. Therefore, the light emitted from the LED chip B is extracted outside without being absorbed by the adjacent LED chips A and C, and the light loss in the light emitting device can be cut off. In addition, in the light emitting device 10 of the first embodiment, a part of the light emitted from the side surface of the LED chip B and reflected by the side surface of the adjacent electrode returns to the LED chip B and is absorbed. According to the light emitting device 20 of the embodiment, since the LED chip is inclined non-parallel to the electrode, the light emitted from the side surface of the LED chip B itself is reflected in a direction different from the LED chip B on the electrode side surface, There is an effect that light absorption by the LED chip B itself can be prevented. Therefore, a light emitting device with a small size, high luminous flux and high efficiency can be realized. In addition, the angle of the LED chip side surface is preferably in the range of 35 to 55 degrees with respect to the electrode surface, and more preferably about 45 degrees.

図６は、本発明の発光装置の第３実施形態を示す図であり、図６（ａ）は発光装置３０の平面図、（ｂ）は（ａ）中のＸ−Ｘ’部断面図である。
本実施形態の発光装置３０は、電極１３の縦断面形状を変更したこと以外は、前述した第１実施形態の発光装置１０と同様の構成要素を備えて構成され、同一の構成要素には同一符号を付している。本実施形態では、電極１３として、電極上面の幅が電極下面より小さく、電極側面に反射面を有することを特徴とする。 6A and 6B are diagrams showing a third embodiment of the light-emitting device of the present invention. FIG. 6A is a plan view of the light-emitting device 30, and FIG. 6B is a cross-sectional view taken along the line XX ′ in FIG. is there.
The light emitting device 30 of the present embodiment is configured to include the same components as those of the light emitting device 10 of the first embodiment described above except that the vertical cross-sectional shape of the electrode 13 is changed, and the same components are the same. The code | symbol is attached | subjected. In the present embodiment, the electrode 13 is characterized in that the width of the upper surface of the electrode is smaller than that of the lower surface of the electrode and a reflective surface is provided on the electrode side surface.

本実施形態によれば、前記各実施形態と同じく、隣接するＬＥＤチップＡ、Ｃの高さが異なるため、ＬＥＤチップＢ側面から出る光は、隣接するＬＥＤチップＡ、Ｃに吸収されない。また、ＬＥＤチップＢ側面から出た光は、隣接する電極の側面で正面方向に反射されるため、光の取出し効率が向上するという効果がある。したがって、小型で高光束・高効率な発光装置を実現できる。   According to this embodiment, since the heights of the adjacent LED chips A and C are different as in the above embodiments, the light emitted from the side surface of the LED chip B is not absorbed by the adjacent LED chips A and C. In addition, since the light emitted from the side surface of the LED chip B is reflected in the front direction by the side surface of the adjacent electrode, there is an effect that the light extraction efficiency is improved. Therefore, a light emitting device with a small size, high luminous flux and high efficiency can be realized.

従来のＬＥＤ実装構造の一例を示す平面図である。It is a top view which shows an example of the conventional LED mounting structure. 従来のＬＥＤ実装構造における出射光の吸収を説明する要部側面図である。It is a principal part side view explaining absorption of the emitted light in the conventional LED mounting structure. 従来のＬＥＤ実装構造の別な例を示す平面図である。It is a top view which shows another example of the conventional LED mounting structure. 本発明の発光素子の第１実施形態を示し、（ａ）は発光装置の平面図、（ｂ）は（ａ）中のＸ−Ｘ’部断面図である。1A and 1B show a first embodiment of a light-emitting element of the present invention, in which FIG. 1A is a plan view of a light-emitting device, and FIG. 本発明の発光素子の第２実施形態を示し、（ａ）は発光装置の平面図、（ｂ）は（ａ）中のＸ−Ｘ’部断面図、（ｃ）は要部拡大平面図である。FIG. 2 shows a second embodiment of the light-emitting element of the present invention, wherein (a) is a plan view of the light-emitting device, (b) is a cross-sectional view taken along the line XX ′ in (a), and (c) is an enlarged plan view of the main part. is there. 本発明の発光素子の第３実施形態を示し、（ａ）は発光装置の平面図、（ｂ）は（ａ）中のＸ−Ｘ’部断面図である。3 shows a third embodiment of the light emitting device of the present invention, wherein (a) is a plan view of the light emitting device, and (b) is a sectional view taken along the line X-X ′ in FIG.

符号の説明Explanation of symbols

１０，２０，３０…発光装置、１１…実装基板、１２…反射枠、１３…電極、１４…ＬＥＤチップ、１５…ワイヤ配線、１６…封止樹脂。   DESCRIPTION OF SYMBOLS 10,20,30 ... Light-emitting device, 11 ... Mounting board, 12 ... Reflection frame, 13 ... Electrode, 14 ... LED chip, 15 ... Wire wiring, 16 ... Sealing resin.

Claims (6)

発光ダイオードチップを搭載するための実装基板と、発光ダイオードチップに電力を供給するため前記実装基板表面に作製された電極と、前記電極上に搭載された複数の発光ダイオードチップとからなり、隣り合う発光ダイオードチップが搭載された電極の高さが異なっていることを特徴とする発光装置。   A mounting substrate for mounting a light emitting diode chip, an electrode fabricated on the surface of the mounting substrate for supplying power to the light emitting diode chip, and a plurality of light emitting diode chips mounted on the electrode, are adjacent to each other. A light emitting device characterized in that heights of electrodes on which light emitting diode chips are mounted are different. 発光ダイオードチップ側面と、隣接する電極側面とを非平行としたことを特徴とする請求項１に記載の発光装置。   The light emitting device according to claim 1, wherein a side surface of the light emitting diode chip and a side surface of the adjacent electrode are made non-parallel. 発光ダイオードチップ側面と、隣接する電極側面とのなす角度を３５度〜５５度の範囲としたことを特徴とする請求項２に記載の発光装置。   The light emitting device according to claim 2, wherein an angle formed between the side surface of the light emitting diode chip and the side surface of the adjacent electrode is in a range of 35 to 55 degrees. 電極の上面幅が下面幅より狭いことを特徴とする請求項１〜３のいずれかに記載の発光装置。   The light emitting device according to claim 1, wherein the upper surface width of the electrode is narrower than the lower surface width. 電極側面が反射面とされたことを特徴とする請求項４に記載の発光装置。   The light emitting device according to claim 4, wherein the electrode side surface is a reflective surface. 発光ダイオードチップが透明樹脂で封止され、この透明樹脂中に、発光ダイオードチップの発光波長により励起され、発光ダイオードチップの発光波長と異なる波長の光を出す蛍光体を含むことを特徴とする請求項１〜５のいずれかに記載の発光装置。   The light emitting diode chip is sealed with a transparent resin, and the transparent resin includes a phosphor that is excited by the light emitting wavelength of the light emitting diode chip and emits light having a wavelength different from the light emitting wavelength of the light emitting diode chip. Item 6. The light emitting device according to any one of Items 1 to 5.
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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012008598A1 (en) * 2010-07-14 2012-01-19 岩谷産業株式会社 Led package device
JP2013219071A (en) * 2012-04-04 2013-10-24 Kyocera Corp Light-emitting element mounting component and light-emitting device
JP2014019436A (en) * 2012-07-13 2014-02-03 Lg Innotek Co Ltd Lamp unit and lighting system for vehicle
JP2014086309A (en) * 2012-10-24 2014-05-12 Mitsubishi Electric Corp Lighting equipment
JP2014192407A (en) * 2013-03-28 2014-10-06 Citizen Electronics Co Ltd Semiconductor light-emitting device
JP2015002317A (en) * 2013-06-18 2015-01-05 ローム株式会社 Led light source module
JP2016039167A (en) * 2014-08-05 2016-03-22 豊田合成株式会社 Light-emitting device
US9751453B2 (en) 2012-07-13 2017-09-05 Lg Innotek Co., Ltd. Lamp unit producing various beam patterns
US9991237B2 (en) 2014-09-19 2018-06-05 Nichia Corporation Light emitting device
US10151434B2 (en) 2016-03-09 2018-12-11 Panasonic Intellectual Property Management Co., Ltd. Light emitting module and lighting apparatus
US10168004B2 (en) 2013-10-01 2019-01-01 Sony Semiconductor Solutions Corporation Light emitting apparatus, light emitting unit, display apparatus, electronic device and light emitting element
EP3663640A1 (en) * 2018-12-05 2020-06-10 Toshiba Lighting & Technology Corporation Vehicular luminaire and vehicular lamp
US11038084B2 (en) 2018-07-31 2021-06-15 Nichia Corporation Light-emitting device
JP2021125543A (en) * 2020-02-05 2021-08-30 シチズン時計株式会社 Led light-emitting device
JP2021145074A (en) * 2020-03-13 2021-09-24 シチズン時計株式会社 Led light-emitting device
JP2022542736A (en) * 2019-07-26 2022-10-07 泉州三安半導体科技有限公司 Light-emitting device package device and display device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6140069A (en) * 1984-07-31 1986-02-26 Sanyo Electric Co Ltd Head for optical printer
JPH0715044A (en) * 1993-06-28 1995-01-17 Nichia Chem Ind Ltd Multicolor light emitting device
JP2002368279A (en) * 2001-06-07 2002-12-20 Sharp Corp Chip light emitting diode
WO2006061763A1 (en) * 2004-12-09 2006-06-15 Koninklijke Philips Electronics N.V. Illumination system
JP2006339541A (en) * 2005-06-03 2006-12-14 Citizen Electronics Co Ltd Chip led
JP2007123609A (en) * 2005-10-28 2007-05-17 Stanley Electric Co Ltd Led lighting device
JP2007513520A (en) * 2003-12-02 2007-05-24 スリーエム イノベイティブ プロパティズ カンパニー Lighting assembly based on light emitting diode

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6140069A (en) * 1984-07-31 1986-02-26 Sanyo Electric Co Ltd Head for optical printer
JPH0715044A (en) * 1993-06-28 1995-01-17 Nichia Chem Ind Ltd Multicolor light emitting device
JP2002368279A (en) * 2001-06-07 2002-12-20 Sharp Corp Chip light emitting diode
JP2007513520A (en) * 2003-12-02 2007-05-24 スリーエム イノベイティブ プロパティズ カンパニー Lighting assembly based on light emitting diode
WO2006061763A1 (en) * 2004-12-09 2006-06-15 Koninklijke Philips Electronics N.V. Illumination system
JP2006339541A (en) * 2005-06-03 2006-12-14 Citizen Electronics Co Ltd Chip led
JP2007123609A (en) * 2005-10-28 2007-05-17 Stanley Electric Co Ltd Led lighting device

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012023188A (en) * 2010-07-14 2012-02-02 Iwatani Internatl Corp Led package device
WO2012008598A1 (en) * 2010-07-14 2012-01-19 岩谷産業株式会社 Led package device
JP2013219071A (en) * 2012-04-04 2013-10-24 Kyocera Corp Light-emitting element mounting component and light-emitting device
US9809149B2 (en) 2012-07-13 2017-11-07 Lg Innotek Co., Ltd Lamp and vehicle lamp apparatus using the same
JP2014019436A (en) * 2012-07-13 2014-02-03 Lg Innotek Co Ltd Lamp unit and lighting system for vehicle
US9751453B2 (en) 2012-07-13 2017-09-05 Lg Innotek Co., Ltd. Lamp unit producing various beam patterns
JP2014086309A (en) * 2012-10-24 2014-05-12 Mitsubishi Electric Corp Lighting equipment
JP2014192407A (en) * 2013-03-28 2014-10-06 Citizen Electronics Co Ltd Semiconductor light-emitting device
JP2015002317A (en) * 2013-06-18 2015-01-05 ローム株式会社 Led light source module
US10168004B2 (en) 2013-10-01 2019-01-01 Sony Semiconductor Solutions Corporation Light emitting apparatus, light emitting unit, display apparatus, electronic device and light emitting element
US10823337B2 (en) 2013-10-01 2020-11-03 Sony Semiconductor Solutions Corporation Light emitting apparatus, light emitting unit, display apparatus, electronic device and light emitting element
JP2016039167A (en) * 2014-08-05 2016-03-22 豊田合成株式会社 Light-emitting device
US9991237B2 (en) 2014-09-19 2018-06-05 Nichia Corporation Light emitting device
US10151434B2 (en) 2016-03-09 2018-12-11 Panasonic Intellectual Property Management Co., Ltd. Light emitting module and lighting apparatus
US11038084B2 (en) 2018-07-31 2021-06-15 Nichia Corporation Light-emitting device
EP3663640A1 (en) * 2018-12-05 2020-06-10 Toshiba Lighting & Technology Corporation Vehicular luminaire and vehicular lamp
US20200182432A1 (en) * 2018-12-05 2020-06-11 Toshiba Lighting & Technology Corporation Vehicular Luminaire and Vehicular Lamp
US10876704B2 (en) 2018-12-05 2020-12-29 Toshiba Lighting & Technology Corporation Vehicular luminaire and vehicular lamp
JP2020091994A (en) * 2018-12-05 2020-06-11 東芝ライテック株式会社 Vehicular illuminating device, and vehicular lighting fixture
JP7196577B2 (en) 2018-12-05 2022-12-27 東芝ライテック株式会社 Vehicle lighting device and vehicle lamp
JP2022542736A (en) * 2019-07-26 2022-10-07 泉州三安半導体科技有限公司 Light-emitting device package device and display device
JP2021125543A (en) * 2020-02-05 2021-08-30 シチズン時計株式会社 Led light-emitting device
JP7410734B2 (en) 2020-02-05 2024-01-10 シチズン時計株式会社 LED light emitting device
JP2021145074A (en) * 2020-03-13 2021-09-24 シチズン時計株式会社 Led light-emitting device
JP7390942B2 (en) 2020-03-13 2023-12-04 シチズン時計株式会社 LED light emitting device

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