JP2009081264A - Semiconductor device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a constitution of a semiconductor device having: wirings for electrically connecting between a semiconductor chip and the outside, and sealed by resin; and a part exposing from the resin in the semiconductor chip without a bonding wire and a molding resin used. <P>SOLUTION: Part of the semiconductor chip 10 is directly bonded to a thermoplastic resin constituting the resin substrate 20 to be covered by the resin substrate 20, a chip connection terminal 22 electrically connected to the semiconductor chip 10 is provided on the bonded surface 20e with the semiconductor chip 10 on the resin substrate 20 as the remnant of the semiconductor chip 10 away from the resin substrate 20, an external connection terminal 23 electrically connected to the outside is provided on the surface 20b other than the bonded surface 20e of the resin substrate 20, and the chip connection terminal 22 and the external connection terminal 23 are conducted by an internal wiring 21 in the substrate 20. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device in which a wiring electrically connecting a semiconductor chip and the outside is sealed with a resin, and the semiconductor chip has a portion exposed from the resin, and such a semiconductor device It relates to a manufacturing method.

  Conventionally, as this type of semiconductor device, for example, thermal flow sensors described in Patent Document 1 and Patent Document 2 have been proposed. In this device, a semiconductor chip as a sensor chip for detecting heat and a lead pin are connected by a bonding wire, and then the bonding wire, a part of the semiconductor chip and the lead pin are sealed with a mold resin. is there.

Here, since the semiconductor chip is provided with a sensing unit for detecting external heat, the entire semiconductor chip is not sealed with mold resin, but a part of the semiconductor chip excluding the sensing unit. Is only sealed. Thereby, the remaining part of the semiconductor chip, that is, the sensing part is separated from the mold resin, and the detection performance is ensured.
JP 2006-90889 A JP 2007-33411 A

  However, conventionally, in order to realize a configuration in which wiring for electrical connection between a semiconductor chip and the outside is sealed with a resin, a bonding wire and a molding resin are used, so that a wire bonding process and a resin sealing with a mold are used. Or a process of sealing with resin by potting is necessary, and the number of processes is increased.

  The present invention has been made in view of the above problems, and the wiring that electrically connects the semiconductor chip and the outside is sealed with a resin, and the semiconductor chip has a portion exposed from the resin. An object of the present invention is to realize a configuration in which the wiring is sealed with a resin without using a bonding wire and a mold resin.

  In order to achieve the above object, the present invention comprises a semiconductor chip (10) and a resin substrate (20) made of a thermoplastic resin having an internal wiring (21) made of a conductor therein. A part is directly adhered to the thermoplastic resin constituting the resin substrate (20) so as to be covered with the resin substrate (20), and the remainder of the semiconductor chip (10) is separated from the resin substrate (20). A chip connection terminal (22) electrically connected to the semiconductor chip (10) is provided on an adhesive surface (20e) of the resin substrate (20) with the semiconductor chip (10), and an adhesive surface of the resin substrate (20) is provided. An external connection terminal (23) electrically connected to the outside is provided on the surface (20b) other than (20e), and the chip connection terminal (22) and the external connection terminal (23) are electrically connected by the internal wiring (21). It was, the first feature.

  According to this, the semiconductor chip (10) and the outside are electrically connected via a chip connection terminal (22), an internal wiring (21), and an external connection terminal (23) provided in advance in the resin substrate (20). Since they can be connected, it is possible to realize a configuration in which the wiring for electrically connecting the semiconductor chip (10) and the outside is sealed with resin without using bonding wires and molding resin.

  Here, the semiconductor chip (10) can have a sensing unit (10a) that outputs a signal corresponding to the state of the external environment, in the remaining part away from the resin substrate (20). According to this, when the semiconductor chip (10) is a sensor chip, it is possible to prevent the sensing part (10a) from being in contact with and covered with the resin substrate (20), and thus it is easy to ensure sensing characteristics.

  In addition, a part of the semiconductor chip (10) enters the inside of the resin substrate (20), and the inner surface (20e) of the part of the resin substrate (20) that enters the semiconductor chip (10) is used as an adhesive surface. (Refer to FIG. 2, FIG. 4 to FIG. 9, etc. described later).

  In this case, the resin substrate (20) is a substrate in which a plurality of layers (2a to 2d) are stacked, and the internal wiring (21) is provided between the plurality of layers (2a to 2d) and the layers. The at least one layer (2c) of the plurality of layers (2a to 2d) is retracted into the side surface (20c), which is a surface extending in the stacking direction, of the surface of the resin substrate (20) than the layers positioned on both sides thereof. The recess (20d) is formed, and a part of the semiconductor chip (10) is inserted into the recess (20d), and the inner surface (20e) of the recess (20d) is used as an adhesive surface. The chip connection terminal (22) may be provided at the end of the internal wiring (21) located in the recess (20d).

  In the configuration in which the concave portion (20d) is formed using such a laminated substrate, a plurality of layers (2a to 2d) provided with the internal wiring (21) are prepared, and the plurality of layers (2a to 2d) are prepared. In the step of laminating at least one layer (2c) forming the recess (20d) and a part of the semiconductor chip (10) are sandwiched between layers (2b, 2d) located on both sides of at least one layer (2c). It can be manufactured by stacking in this state (see FIG. 2 described later). According to this, the same structure is appropriately manufactured without performing a resin sealing process such as a wire bonding process, a mold, or potting.

  In the case of forming the recess (20d) using such a laminated substrate, the external connection terminals (23) are both surfaces of the surface of the resin substrate (20) that are orthogonal to the lamination direction. It can be provided on one of the plate surfaces (20a, 20b).

  One part of both plate surfaces (20a, 20b) of the surface of the resin substrate (20) is an adhesive surface (20e) of the resin substrate (20), and a part of the semiconductor chip (10) is It is good also as what is adhere | attached on the adhesion surface (20e) as one part of both board surfaces (20a, 20b) (refer FIG. 10, FIG. 12 mentioned later).

  The present invention also includes a semiconductor chip (10) and a resin substrate (20) which is a substrate made of resin and has a portion facing a part of the semiconductor chip (10). A chip connection terminal (22) electrically connected to the semiconductor chip (10) is provided at a part facing the part of the semiconductor chip (10), and a surface other than the chip connection terminal (22) in the resin substrate (20). The external connection terminal (23) electrically connected to the outside is provided, the internal wiring (21) made of a conductor is provided inside the resin substrate (20), and the chip connection terminal (22) and the external connection terminal (23 ) Is conducted by the internal wiring (21).

  Also in this case, the semiconductor chip (10) and the outside are electrically connected via a chip connection terminal (22), an internal wiring (21), and an external connection terminal (23) provided in advance in the resin substrate (20). Since they can be connected, it is possible to realize a configuration in which the wiring for electrically connecting the semiconductor chip (10) and the outside is sealed with resin without using bonding wires and molding resin.

  In the case of the semiconductor device having the second feature, the semiconductor chip (10) and the chip connection terminal (22) are connected via the solder bump (40) made of solder, and the connection portion by the solder bump (40). In other parts, the resin substrate (20) and the part of the semiconductor chip (10) facing each other may be separated (see FIG. 13 described later).

  Furthermore, between the resin substrate (20) and the part of the semiconductor chip (10) facing each other, the resin substrate (20) and the semiconductor chip (10) are disposed at a portion other than the connection portion by the solder bump (40). If the solder member (41) to be connected and supported is provided, the connection strength between the substrate and the chip is reinforced, which is preferable (see FIG. 14 described later).

  In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

(First embodiment)
FIG. 1 is a schematic cross-sectional view showing the overall configuration of the semiconductor device 100 according to the first embodiment of the present invention. The semiconductor device 100 of the present embodiment is mainly configured to include a semiconductor chip 10 and a resin substrate 20 that is a wiring member for connecting the semiconductor chip 10 to the outside.

  The semiconductor chip 10 includes a sensing unit 10a that outputs a signal according to the state of the external environment. Specifically, the sensing unit 10a detects a temperature change according to the flow rate of the outside air by touching the outside air as described in Patent Documents 1 and 2, and includes a sensor element on the diaphragm. A temperature change corresponding to the flow rate of the outside air is output as an electrical signal.

  In addition to this, the sensing unit 10a is configured as, for example, a diaphragm as a pressure detection element that receives the pressure of outside air, an acceleration detection element that detects external acceleration, or an angular velocity detection element that detects external angular velocity. And a beam structure having comb-like movable parts.

  Furthermore, as the sensing unit 10a, a gas detection element, an infrared detection element, a flow rate detection element, a humidity detection element, or the like that comes into contact with the external environment and outputs a signal corresponding to the physical quantity or chemical quantity of the external environment. That's fine.

  Such a semiconductor chip 10 is formed by forming the above-described diaphragm, movable part, and the like on a silicon semiconductor substrate or the like together with elements such as transistors and diodes using a known semiconductor process technology. .

  The resin substrate 20 is a substrate made of a tree thermoplastic resin having a property of being softened by heating and exhibiting fluidity. Examples of the thermoplastic resin constituting the resin substrate 20 include liquid crystal polymer, thermoplastic polyimide, polyether ether ketone, and polyether imide. An internal wiring 21 is provided inside the resin substrate 20.

  The resin substrate 20 is a substrate in which a plurality of layers 2a to 2d (see FIG. 2 described later) are stacked. Here, one plate surface 20a and the other plate surface 20b which are main surfaces among the surfaces of the resin substrate 20 are surfaces orthogonal to the stacking direction of the plurality of layers 2a to 2d, and the side surface 20c is the stacking direction. It is a surface extending in the direction.

  The internal wiring 21 is provided between the plurality of layers 2a to 2d and the layers 2a to 2d. Specifically, the internal wiring 21 includes an interlayer wiring 21a provided between the layers and a through hole 21b provided in each of the layers 2a to 2d and electrically connecting the interlayer wiring 21a.

  Of the internal wiring 21, the interlayer wiring 21a is made of, for example, a patterned foil such as Cu, and the through hole 21b is made of a conductive material such as Ag or Sn filled in the through holes provided in the respective layers 2a to 2d. .

  As shown in FIG. 1, a part of the semiconductor chip 10 enters the resin substrate 20. Here, a part of the semiconductor chip 10 enters from the side surface 20c of the resin substrate 20, and a portion of the resin substrate 20 that enters the semiconductor chip 10 is configured as a recess 20d.

  The inner surface 20e of the recess 20d of the resin substrate 20 and a part of the semiconductor chip 10 are directly bonded by a thermoplastic resin constituting the resin substrate 20 by thermocompression bonding or the like. That is, the inner surface 20e of the recess 20d of the resin substrate 20 is an adhesive surface bonded to the semiconductor chip 10, and a part of the semiconductor chip 10 is covered by the inner surface 20e of the recess 20d as the adhesive surface.

  Further, the remaining part of the semiconductor chip 10 that does not enter the resin substrate 20 is separated from the resin substrate 20 and is exposed from the resin substrate 20. The sensing unit 10 a is located in the remaining part of the semiconductor chip 10. In the present embodiment, the resin substrate 20 is exposed without being covered.

  A chip connection terminal 22 is provided on the inner surface 20e of the recess 20d, which is a bonding surface of the resin substrate 20 to the semiconductor chip 10. The chip connection terminal 22 is provided at the end of the internal wiring 21 located in the recess 20d, and a part of the semiconductor chip 10 entering the recess 20d and the chip connection terminal 22 are electrically connected. .

  Here, the chip electrode 11 is provided on the surface of the portion of the semiconductor chip 10 that enters the recess 20d. The chip electrode 11 is electrically connected to the sensing unit 10a, and is formed by forming a film of Ni or Au on the surface of, for example, Al as a main body.

  The chip connection terminal 22 may be made of a conductor that is electrically connected to the internal wiring 21. Here, the chip connection terminal 22 has the same configuration as the through hole 21b, such as Ag or Sn. It becomes more. The chip electrode 11 and the chip connection terminal 22 are electrically bonded by solid phase bonding or the like.

  Further, external connection terminals 23 that are electrically connected to the outside are provided on the surface 20b other than the inner surface 20e of the recess 20d, which is an adhesive surface in the resin substrate 20. The external connection terminal 23 electrically connects the semiconductor device 100 and the outside. For example, the external connection terminal 23 is connected to an external wiring member such as a wire harness or a circuit board by thermocompression bonding or soldering. Is.

  Here, the external connection terminal 23 is provided on the other plate surface 20 b of the two plate surfaces 20 a and 20 b that are the surface of the resin substrate 20. However, although not shown, the external connection terminal 23 may be provided on one plate surface 20a of both the plate surfaces 20a and 20b of the resin substrate 20 or provided on the side surface 20c which is the surface of the resin substrate 20. It may be. In any case, it is only necessary that the external connection terminal 23 is provided on a surface other than the adhesive surface of the resin substrate 20 and can be connected to the external wiring member described above.

  Here, the external connection terminal 23 has the same configuration as the through hole 21b and is made of Ag, Sn, or the like. However, the external connection terminal 23 is connected to the same material such as Ag or Sn on the other plate surface 20b side of the resin substrate 20 or another electrode such as Cu is connected to the same Ag or Sn. It may be what was done.

  The chip connection terminal 22 and the external connection terminal 23 are electrically connected by the internal wiring 21. The external connection terminal 23 may also be made of a conductor that is electrically connected to the internal wiring 21, and may be made of a conductor material other than a material such as Ag or Sn constituting the through hole 21b. .

  Thus, the internal wiring 21, the chip connection terminal 22, and the external connection terminal 23 in the resin substrate 20 are configured as the wirings 21 to 23 that electrically connect the semiconductor chip 10 and the outside. The sensing unit 10 a of the semiconductor chip 10 and the outside can be electrically exchanged via the chip electrode 11, the chip connection terminal 22, the internal wiring 21, and the external connection terminal 23.

  As described above, in the present embodiment, the resin substrate 20 has a portion facing the part of the semiconductor chip 10, and the chip connection terminal 22 is provided at the facing portion. That is, in the present embodiment, the directly facing portion in the resin substrate 20 is the inner surface 20e of the recess 20d.

  In the present embodiment, the inner surface 20e of the recess 20d as the directly facing portion is bonded to a part of the semiconductor chip 10 to cover the bonded part, and the remaining part of the semiconductor chip 10 is separated from the resin substrate 20. Exposed.

  Next, an example of the method for manufacturing the semiconductor device 100 of this embodiment will be described. FIG. 2 is a process diagram showing the manufacturing method, and schematically shows a workpiece in the middle of manufacture in a cross section in the thickness direction of the resin substrate 20.

  First, as shown in FIG. 2, for the resin substrate 20, a plurality of thermoplastic resin layers 2a to 2d are prepared, and Cu foil is attached to each of the layers 2a to 2d. By patterning, this patterned Cu foil is formed as the interlayer wiring 21a.

  Further, in each of the layers 2a to 2d, holes are formed by punching, laser processing, or the like in the portions to be the chip connection terminals 22 and the external connection terminals 23, and the portions to be connected between the interlayer wirings 21, and inside the holes, The through-hole 21b is formed by filling the conductor paste such as Sn or Ag by a printing method or the like. Thus, a plurality of layers 2a to 2d provided with the internal wiring 21 are prepared.

  Further, in the side surface 20c which is the surface of the resin substrate 20, one layer 2c among the plurality of layers 2a to 2d is made to be more than the layers 2b and 2d located on both the upper side and the lower side of the one layer 2c. By forming the recess 20 d, a recess 20 d is formed as a part that has entered the semiconductor chip 10. This can be easily realized by cutting the first layer 2c to have a smaller size than the two layers 2b and 2d on both sides.

  Next, the plurality of layers 2a to 2d are stacked. In this step, as shown in FIG. 2, the first layer 2c forming the recess 20d and a part of the semiconductor chip 10 are placed on both sides of the first layer 2c. Is sandwiched between the layers 2b and 2d positioned at the same position and stacked in this state.

  In this way, the layers 2a to 2d and the semiconductor chip 10 are stacked and heated while being pressurized. By this heating, the thermoplastic resins constituting the layers 2a to 2d are softened, and the layers 2a to 2d are joined. Further, the layers 2b and 2d constituting the inner surface 20e of the recess 20d, which is an adhesive surface, and the semiconductor chip 10 are bonded.

  Further, by heating during the stacking, the chip electrode 11 and the chip connection terminal 22 of the semiconductor chip 10 are thermocompression-bonded and solid-phase bonded to each other. In addition, the interlayer wiring 21a and the through hole 21b of each layer 2a to 2d are joined to each other electrically and mechanically by thermocompression bonding and causing metal diffusion or the like.

  Thus, the resin substrate 20 on which the wiring for conducting the chip connection terminal 22, the internal wiring 21, and the external connection terminal 23 is formed is completed, and the electrical connection between the semiconductor chip 10 and the chip connection terminal 22 of the resin substrate 20, and The semiconductor device 100 is completed by directly bonding the semiconductor chip 10 and the resin substrate 20 together.

  In the example shown in FIG. 2, the thickness of the semiconductor chip 10 corresponds to the thickness of one layer 2 c among the plurality of layers 2 a to 2 d constituting the resin substrate 20. The layer 2c is a layer that forms the recess 20d into which the semiconductor chip 10 enters.

  However, when the thickness of the semiconductor chip 10 corresponds to 2 or 3 or more of the layers 2a to 2d, when forming the recess 20d into which the semiconductor chip 10 enters, the 2 or 3 or more layers are You may form a recessed part by making it retract rather than the layer located in the upper and lower sides of 2 or 3 or more layers.

  FIGS. 3A and 3B are schematic plan views showing the stacking process, and are top views of the workpiece shown in FIG. The stacking step may be performed for each of the semiconductor chips 10 as shown in FIG. 3A, or a plurality of semiconductor chips 10 are connected as shown in FIG. 3B. Another wafer 10 'may be used.

  In the case of the wafer 10 ′ shown in FIG. 3B, the wafer ′ is laminated together with the resin substrate 20, and after connecting the respective parts by the heating, if divided by the broken line H in FIG. The separated semiconductor device 100 of this embodiment is completed.

  By the way, according to the present embodiment, the semiconductor chip 10 and the outside can be electrically connected via the chip connection terminal 22, the internal wiring 21, and the external connection terminal 23 provided in advance in the resin substrate 20. . Therefore, the wirings 21 to 23 that electrically connect the semiconductor chip 10 and the outside are sealed with resin without using bonding wires and mold resin.

  In the present embodiment, the semiconductor chip 10 includes the sensing unit 10a. However, when the semiconductor chip 10 is a sensor chip as described above, when the sensing unit 10a comes into contact with the resin substrate 20 and is covered therewith. Sensing is likely to be difficult. In this respect, since the sensing part 10a is provided in the remaining part of the semiconductor chip 10 that is exposed away from the resin substrate 20 as in the present embodiment, it is easy to ensure the sensing characteristics.

  Further, according to the manufacturing method shown in FIG. 2, the semiconductor chip 10 and the outside are electrically connected without performing a conventional wire bonding process or a resin sealing process such as a mold or potting. The structure which sealed the wirings 21-23 with resin can be formed, and the semiconductor device 100 of this embodiment is manufactured appropriately.

(Second Embodiment)
FIG. 4 is a schematic cross-sectional view showing the overall configuration of the semiconductor device 102 according to the second embodiment of the present invention, and FIG. 5 is a schematic external perspective view of the semiconductor device 102. In the first embodiment, as shown in FIGS. 1 and 3, the end of one side of the semiconductor chip 10 having a rectangular plate shape has entered the resin substrate 20 from the side surface 20 c of the resin substrate 20. .

  On the other hand, in the semiconductor device 102 of this embodiment, as shown in FIGS. 4 and 5, not only the end on one side of the semiconductor chip 10 having a rectangular plate shape, but also the ends of a plurality of sides are made of resin. The resin substrate 20 is entered from the side surface 20 c of the substrate 20. Here, all the four sides of the semiconductor chip 10, that is, the end portions of the entire circumference, enter the resin substrate 20.

  In this case, the resin substrate 20 has a through hole with a central opening having a rectangular opening, and the inner peripheral surface of the through hole is configured as a side surface 20c. Such a semiconductor device 102 of the present embodiment is manufactured in the same manner as in FIG. 2 by making each of the layers 2a to 2d in FIG. 2 have a shape having the through hole.

  FIG. 6 is a schematic external perspective view showing a semiconductor device as another example of the present embodiment. The cross-sectional configuration of this semiconductor device is the same as that of FIG. 4 described above, but in this example, two opposite end portions of the rectangular semiconductor chip 10 enter the resin substrate 20 from the side surface 20c of the resin substrate 20. It is

  The semiconductor device of this embodiment also has a configuration in which the wirings 21 to 23 that electrically connect the semiconductor chip 10 and the outside are sealed with resin without using bonding wires and mold resin. In the case of the semiconductor chip 10 having a rectangular plate shape, the end portions on the three sides may enter the resin substrate 20 from the side surface 20 c of the resin substrate 20.

(Third embodiment)
FIG. 7 is a schematic cross-sectional view showing the overall configuration of the semiconductor device 103 according to the third embodiment of the present invention. The present embodiment is a modification of the second embodiment. In the second embodiment, as shown in FIG. 4, both surfaces of the sensing unit 10 a of the semiconductor chip 10 are exposed apart from the resin substrate 20.

  On the other hand, in the semiconductor device 103 of the present embodiment, as shown in FIG. 7, one surface of the sensing unit 10a of the semiconductor chip 10 is exposed away from the resin substrate 20, but the other surface is The resin substrate 20 is adhered and covered. In many cases, the sensing unit 10a only needs to be exposed on one side, and this embodiment is effective in such a case.

  Such a configuration can be easily manufactured by appropriately changing the shapes of the plurality of layers 2a to 2d in FIG. Further, in the present embodiment, in the semiconductor chip 10 having a rectangular plate shape, the end portion that enters the resin substrate 20 from the side surface 20c of the resin substrate 20 may be an end portion of two sides, an end portion of three sides, or all four sides. The end of

(Fourth embodiment)
FIG. 8 is a schematic cross-sectional view showing the overall configuration of the semiconductor device 104 according to the fourth embodiment of the present invention. This embodiment is also a modification of the second embodiment.

  In the present embodiment, in the semiconductor device 102 of the second embodiment shown in FIG. 4, both surfaces of the sensing unit 10a of the semiconductor chip 10 are separated from the resin substrate 20, and one surface of the sensing unit 10a is exposed. However, the other surface is covered with the resin substrate 20.

  Such a configuration can also be easily manufactured by appropriately changing the shapes of the plurality of layers 2a to 2d in FIG. Also in this embodiment, the end portion that enters the resin substrate 20 in the semiconductor chip 10 having a rectangular plate shape may be an end portion of two sides, an end portion of three sides, or an end portion of all four sides.

(Fifth embodiment)
FIG. 9 is a schematic cross-sectional view showing the overall configuration of the semiconductor device 105 according to the fifth embodiment of the present invention. This embodiment is also a modification of the second embodiment.

  In the present embodiment, in the semiconductor device 102 of the second embodiment shown in FIG. 4, both surfaces of the sensing unit 10 a of the semiconductor chip 10 are covered with the resin substrate 20 while being separated from the resin substrate 20.

  In this case, the space between both surfaces of the sensing unit 10a of the semiconductor chip 10 and the resin substrate 20 may penetrate the resin substrate 20 in the direction perpendicular to the paper surface of FIG. 9 or may be a closed space. . In the case of a closed space, the sensing unit 10a is separated from the resin substrate 20, but does not come into contact with the external environment. However, when the sensing unit 10a is, for example, an acceleration detection element having a movable part, sensing can be performed without any problem.

  This configuration can also be easily manufactured by appropriately changing the shapes of the plurality of layers 2a to 2d, and the end portion that enters the resin substrate 20 in the semiconductor chip 10 having a rectangular plate shape is also an end portion of two sides. It may be the end of three sides or the end of all four sides.

  Further, in this configuration, if the space on both sides of the sensing unit 10a is the same size and symmetrical, it is desirable in terms of suppressing warpage, distortion, and the like due to temperature changes compared to the configuration shown in FIG. .

(Sixth embodiment)
FIG. 10 is a schematic cross-sectional view showing the overall configuration of the semiconductor device 106 according to the sixth embodiment of the present invention. In each of the above embodiments, a part of the semiconductor chip 10 has entered the inside of the resin substrate 20, and the inner surface 20 e of the portion of the resin substrate 20 that has entered the semiconductor chip 10 is an adhesive surface.

  On the other hand, in this embodiment, as shown in FIG. 10, a part of the other plate surface 20 b out of the two plate surfaces 20 a and 20 b that are the surfaces of the resin substrate 20 serves as an adhesive surface 20 e of the resin substrate 20. It is configured. A part of the semiconductor chip 10 is bonded to an adhesive surface 20e as a part of the other plate surface 20b.

  In this case, after forming the resin substrate 20 on which the internal wiring 21 and the terminals 22 and 23 are formed, the adhesive surface 20e of the resin substrate 20 and the semiconductor chip 10 are heated and pressed to be thermocompression bonded. The resin substrate 20 and the semiconductor chip 10 are bonded by a thermoplastic resin, and the chip connection terminal 22 and the chip electrode 11 are electrically connected.

  The semiconductor device 106 of the present embodiment can also realize a configuration in which the wiring that electrically connects the semiconductor chip 10 and the outside is sealed with resin without using bonding wires and mold resin.

  Thus, also in the case of the sixth embodiment, the resin substrate 20 has a portion facing the part of the semiconductor chip 10, and the chip connection terminal 22 is provided at the facing portion. That is, in the present embodiment, the part facing the resin substrate 20 is a part of the other plate surface 20b.

  In the present embodiment, a part of the other plate surface 20b serving as the directly facing portion is bonded to a part of the semiconductor chip 10 as an adhesive surface 20e to cover the bonded part. The remaining portion is exposed away from the resin substrate 20.

  Although not shown, by providing the chip connection terminal 22 on the one plate surface 20a in the resin substrate 20, a part of the one plate surface 20a is used as an adhesive surface opposite to FIG. 10 may be adhered.

(Seventh embodiment)
FIG. 11 is a schematic cross-sectional view showing the overall configuration of the semiconductor device 107 according to the seventh embodiment of the present invention. In the present embodiment, as in the first embodiment, a part of the semiconductor chip 10 enters the inside of the resin substrate 20, and the inner surface 20 e of the portion of the resin substrate 20 that enters the semiconductor chip 10 is an adhesive surface. Has been.

  Here, in the present embodiment, as shown in FIG. 11, another semiconductor chip 30 is built in the resin substrate 20. The other semiconductor chip 30 is, for example, a circuit chip that processes a signal from the semiconductor chip 10, and is electrically connected to the internal wiring 21 inside the resin substrate 20.

  The semiconductor device 107 according to the present embodiment having the other semiconductor chip 30 is provided with a space in which another semiconductor chip 30 is arranged in a part of a plurality of layers in the manufacturing method shown in FIG. After that, the plurality of layers, the semiconductor chip 10 and another semiconductor chip 30 are stacked and stacked.

  Also in the present embodiment, it is possible to realize a configuration in which the wiring for electrically connecting the semiconductor chip 10 and the outside is sealed with resin without using bonding wires and molding resin.

(Eighth embodiment)
FIG. 12 is a schematic cross-sectional view showing the overall configuration of the semiconductor device 108 according to the eighth embodiment of the present invention. The present embodiment is a combination of the sixth embodiment and the seventh embodiment.

  As shown in FIG. 12, a part of one plate surface 20a of the resin substrate 20 is configured as an adhesion surface 20e, and a part of the semiconductor chip 10 is adhered to the adhesion surface 20e. Another semiconductor chip 30 is built in the inside 20.

(Ninth embodiment)
FIG. 13 is a schematic cross-sectional view showing an overall configuration of a semiconductor device 109 according to the ninth embodiment of the present invention.

  In each of the above embodiments, the resin substrate 20 has a portion facing the part of the semiconductor chip 10, the chip connection terminal 22 is provided at the portion facing the semiconductor substrate 10, and the portion facing the resin substrate 20 is The semiconductor chip 10 is bonded to a part of the semiconductor chip 10 to cover the bonded portion.

  Also in the present embodiment, as shown in FIG. 13, the resin substrate 20 has a part facing the part of the semiconductor chip 10, and the chip connection terminal 22 is provided at the part facing the part. However, here, although the chip connection terminal 22 is connected to the semiconductor chip 10, in the part other than the chip connection terminal 22, the part facing the resin substrate 20 is not bonded to a part of the semiconductor chip 10. .

  Specifically, as shown in FIG. 13, the portion of the resin substrate 20 that directly faces a part of the semiconductor chip 10 is one plate surface 20a, and a printed circuit board connection provided on the one plate surface 20a. The terminal 22 is electrically and mechanically connected to the chip electrode 11 by a solder bump 40. The solder bump 40 is made of general lead-free solder or eutectic solder.

  And in parts other than the connection part by this solder bump 40, one board surface 20a of the resin substrate 20 which opposes mutually and a part of semiconductor chip 10 are separated. Such a configuration can be formed in the same manner as in FIGS. 10 and 12 except that the connection is made through the solder bumps 40.

  In order to reinforce the solder bumps 40, a resin such as a so-called underfill may be filled between the semiconductor chip 10 and the resin substrate 20. In FIG. 13, another semiconductor chip 30 is provided inside the resin substrate 20. However, in the present embodiment, the other semiconductor chip 30 may not be provided.

  And also by the semiconductor device 109 of this embodiment, since the semiconductor chip 10 and the outside can be electrically connected via the respective wirings 21 to 23 provided in the resin substrate 20 in advance, Without using the mold resin, it is possible to realize a configuration in which the wiring for electrically connecting the semiconductor chip 10 and the outside is sealed with the resin.

  In this case, since it is not necessary to bond the resin substrate 20 and the semiconductor chip 10 with the resin constituting the resin substrate 20, the resin substrate 20 is composed of a resin other than the thermoplastic resin, such as a thermosetting resin. May be.

  FIG. 14 is a schematic plan view showing the main part of a semiconductor device as another example of the ninth embodiment. In the example shown in FIG. 14, a solder member 41 made of a solder material is further provided in the configuration shown in FIG.

  This solder member 41 is interposed between one plate surface 20a of the resin substrate 20 facing each other and a part of the semiconductor chip 10 except for the connection portion by the solder bump 40. The semiconductor chip 10 is connected to support both the members 10 and 20.

  In the example shown in FIG. 14A, the solder members 41 are provided around the individual solder bumps 40. In the example shown in FIG. 14B, the solder members 41 are all the solder bumps 40. It is provided in an annular shape so as to surround. According to this, the mechanical connection strength between the semiconductor chip 10 and the resin substrate 20 is improved, and the thermal stress applied to the solder bumps 40 can be reduced.

(10th Embodiment)
The tenth embodiment of the present invention provides a manufacturing method suitable for manufacturing the semiconductor device shown in the above-described embodiment, particularly in FIG. 4 to FIG. FIG. 15 is a process diagram showing the manufacturing method, FIG. 16 is a process diagram following FIG. 15, FIG. 15 is a plan view of the work, and FIG. 16 is a cross-sectional view of the work.

  First, as shown in FIG. 15 and FIG. 16A, a wafer on which a plurality of units of semiconductor chips 10 are formed is attached to a resin film 200 and diced, and then the resin film 200 is stretched. Thereby, the cut individual semiconductor chips 10 are separated on the resin film 200.

  Thereafter, as shown in FIG. 16A, the plurality of semiconductor chips 10 are transferred to one layer 2 a constituting the resin substrate 20. Further, as shown in FIG. 16C, the plurality of layers 2b and 2c in which openings for exposing the semiconductor chip 10 are formed and the semiconductor chip 10 are aligned and stacked.

  Here, although not shown in FIG. 16, the chip connection terminal 22, the internal wiring 21, and the external connection terminal 23 are formed in the respective layers 2 a to 2 c in FIG. 16 in the same manner as described above. Then, as shown in FIG. 16 (d), the stacked body is heated and pressurized to embed a plurality of semiconductor chips 10 in the resin substrate 20, and then cut out one by one along the cut line K. In this way, the semiconductor device of the above-described embodiment separated into pieces is completed.

(Other embodiments)
It should be noted that the semiconductor chip does not have to have the sensing part, and even if it is a general IC chip without the sensing part, there is a part exposed from the resin. That's fine.

  Further, the resin substrate only needs to have internal wiring, chip connection terminals, and external connection terminals, and is not limited to the manufacturing method of laminating a plurality of resin layers as shown in FIG. .

1 is a schematic cross-sectional view showing an overall configuration of a semiconductor device according to a first embodiment of the present invention. It is process drawing which shows the manufacturing method of the semiconductor device which concerns on 1st Embodiment. (A), (b) is a schematic plan view which shows a lamination process. It is a schematic sectional drawing which shows the whole structure of the semiconductor device which concerns on 2nd Embodiment of this invention. FIG. 5 is a schematic external perspective view of the semiconductor device shown in FIG. 4. It is a general | schematic external appearance perspective view which shows the semiconductor device as another example of 2nd Embodiment. It is a schematic sectional drawing which shows the whole structure of the semiconductor device which concerns on 3rd Embodiment of this invention. It is a schematic sectional drawing which shows the whole structure of the semiconductor device which concerns on 4th Embodiment of this invention. It is a schematic sectional drawing which shows the whole structure of the semiconductor device which concerns on 5th Embodiment of this invention. It is a schematic sectional drawing which shows the whole structure of the semiconductor device which concerns on 6th Embodiment of this invention. It is a schematic sectional drawing which shows the whole structure of the semiconductor device which concerns on 7th Embodiment of this invention. It is a schematic sectional drawing which shows the whole structure of the semiconductor device which concerns on 8th Embodiment of this invention. It is a schematic sectional drawing which shows the whole structure of the semiconductor device which concerns on 9th Embodiment of this invention. It is a schematic plan view which shows the principal part of the semiconductor device as another example of 9th Embodiment. It is process drawing which shows the manufacturing method of the semiconductor device which concerns on 10th Embodiment of this invention. FIG. 16 is a process diagram illustrating the manufacturing method following FIG. 15.

Explanation of symbols

2a to 2d ... a plurality of layers, 10 ... a semiconductor chip, 10a ... a sensing unit,
20 ... resin substrate, 20a ... one plate surface of the resin substrate, 20b ... the other plate surface of the resin substrate,
20d ... concave portion, 20e ... adhesive surface, 21 ... internal wiring, 22 ... chip connection terminal,
23 ... External connection terminal, 40 ... Solder bump, 41 ... Solder member.

Claims (10)

A semiconductor chip (10);
A resin substrate (20) which is a substrate made of a thermoplastic resin and has an internal wiring (21) made of a conductor inside,
A part of the semiconductor chip (10) is directly bonded to a thermoplastic resin constituting the resin substrate (20) and covered with the resin substrate (20), and the remaining part of the semiconductor chip (10) It is separated from the resin substrate (20),
A chip connection terminal (22) electrically connected to the semiconductor chip (10) is provided on an adhesive surface (20e) of the resin substrate (20) with the semiconductor chip (10).
On the surface (20b) other than the adhesive surface (20e) in the resin substrate (20), an external connection terminal (23) electrically connected to the outside is provided,
The semiconductor device, wherein the chip connection terminal (22) and the external connection terminal (23) are electrically connected by the internal wiring (21). The said semiconductor chip (10) has a sensing part (10a) which outputs the signal according to the state of an external environment in the said remaining part separated from the said resin substrate (20). Item 14. The semiconductor device according to Item 1. A part of the semiconductor chip (10) enters the resin substrate (20),
3. The semiconductor device according to claim 1, wherein an inner surface (20 e) of a portion of the resin substrate (20) entering the semiconductor chip (10) is used as the bonding surface. The resin substrate (20) is a substrate in which a plurality of layers (2a to 2d) are laminated, and the internal wiring (21) is provided between the layers (2a to 2d) and the layers. ,
Of the surface of the resin substrate (20), at least one layer (2c) of the plurality of layers (2a to 2d) is provided on the side surface (20c) that is a surface extending in the stacking direction. ), The recess (20d) is formed as a part that has entered the semiconductor chip (10).
A part of the semiconductor chip (10) enters the recess (20d), and the inner surface (20e) of the recess (20d) is bonded to a part of the semiconductor chip (10) as the bonding surface.
The semiconductor device according to claim 3, wherein the chip connection terminal (22) is provided at an end of the internal wiring (21) located in the recess (20d). The external connection terminal (23) is provided on one of both plate surfaces (20a, 20b), which is a surface orthogonal to the stacking direction, of the surface of the resin substrate (20). Item 5. The semiconductor device according to Item 4. One part of both plate surfaces (20a, 20b) of the surface of the resin substrate (20) is the adhesive surface (20e) of the resin substrate (20),
The part of the semiconductor chip (10) is bonded to the bonding surface (20e) as one part of the two plate surfaces (20a, 20b). Semiconductor device. A manufacturing method for manufacturing the semiconductor device according to claim 4,
Preparing the plurality of layers (2a to 2d) provided with the internal wiring (21);
In the step of laminating the plurality of layers (2a to 2d), a part of the at least one layer (2c) and the semiconductor chip (10) forming the concave portion (20d) is formed on the at least one layer (2c). A method of manufacturing a semiconductor device, characterized by sandwiching layers (2b, 2d) located on both sides and stacking in this state. A semiconductor chip (10);
A resin substrate (20) which is a substrate made of resin and has a portion facing a part of the semiconductor chip (10);
A chip connection terminal (22) electrically connected to the semiconductor chip (10) is provided at a portion of the resin substrate (20) that faces the part of the semiconductor chip (10).
On the surface of the resin substrate (20) other than the chip connection terminal (22), an external connection terminal (23) that is electrically connected to the outside is provided,
An internal wiring (21) made of a conductor is provided inside the resin substrate (20), and the chip connection terminal (22) and the external connection terminal (23) are electrically connected by the internal wiring (21). A semiconductor device. The semiconductor chip (10) and the chip connection terminal (22) are connected via solder bumps (40) made of solder,
9. The resin substrate (20) and a part of the semiconductor chip (10) facing each other are apart from each other at a portion other than the connection portion by the solder bump (40). Semiconductor device. Between the resin substrate (20) and the part of the semiconductor chip (10) facing each other, the resin substrate (20) and the semiconductor chip (at a portion other than the connection portion by the solder bump (40)). 10. A semiconductor device according to claim 8 or 9, further comprising a solder member (41) for connecting and supporting 10).

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