JP2009064991A - High−k膜のドライエッチング方法 - Google Patents
High−k膜のドライエッチング方法 Download PDFInfo
- Publication number
- JP2009064991A JP2009064991A JP2007232157A JP2007232157A JP2009064991A JP 2009064991 A JP2009064991 A JP 2009064991A JP 2007232157 A JP2007232157 A JP 2007232157A JP 2007232157 A JP2007232157 A JP 2007232157A JP 2009064991 A JP2009064991 A JP 2009064991A
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- film
- etching
- gas
- dry etching
- polysilicon
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000001312 dry etching Methods 0.000 title claims abstract description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 9
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 9
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 36
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 11
- 238000001020 plasma etching Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 40
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 32
- 229920005591 polysilicon Polymers 0.000 abstract description 32
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 2
- 229910052756 noble gas Inorganic materials 0.000 abstract 1
- 238000002955 isolation Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 5
- 229910021342 tungsten silicide Inorganic materials 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 238000007790 scraping Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000588731 Hafnia Species 0.000 description 1
- 101710195802 Nitric oxide synthase oxygenase Proteins 0.000 description 1
- -1 Silicon Aluminum-Oxide Nitride Chemical class 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
本発明の目的は、High−k膜である金属酸化物を、下地ポリシリコン膜との高い選択性(比)を保ちつつ、パターンの疎部と密部によるエッチング速度差、及び形状差の小さいエッチング特性を有するHigh−k膜のドライエッチング方法を提供することである。
【解決手段】
プラズマを用いHigh−k膜をドライエッチングする方法で、希ガスと混合したBCl3ガスに、炭素元素比率の高いフルオロカーボンガスを微少添加する構成とした。
【選択図】図3
Description
2 導波管
3 石英板
4 ソレノイドコイル
5 プラズマ
6 ウェハ
7 直流電源
8 試料台
9 高周波電源
10 ハードマスク
11 タングステンシリサイド膜
12 ポリシリコン膜(コントロールゲート)
13 High−k膜
14 ポリシリコン膜(フローティングゲート)
15 下地絶縁膜(ゲート酸化膜)
16 素子分離トレンチ
17 シリコン基板
18 密部ポリシリコン残膜量
19 疎部ポリシリコン残膜量
20 密部のHigh−k膜
21 疎部のHigh−k膜
22 High−k膜の疎密差
23 密部の素子分離トレンチの削れ量
24 疎部の素子分離トレンチの削れ量
25 素子分離トレンチの削れ量の疎密差
26 ポリシリコンの残膜量の疎密差
27 エッチング速度の疎密差が小さい範囲
28 High−k段差
Claims (6)
- 金属と酸素が結合した金属酸化膜をプラズマエッチングする方法において、希ガスとBCl3の混合ガスにフルオロカーボン系ガスを添加することを特徴とするHigh−k膜のドライエッチング方法。
- 請求項1記載のHigh−k膜のドライエッチング方法において、前記金属酸化膜を構成する金属が、Al,Hf,Zr,Ta,Siのうち、少なくとも一つ以上の金属を含むことを特徴とするHigh−k膜のドライエッチング方法。
- 請求項1記載のHigh−k膜のドライエッチング方法において、前記金属酸化膜が、Al2O3,HfO2,ZrO2,AlHfO,Ta2O5のうち、少なくとも一つ以上の積層膜で構成されていることを特徴とするHigh−k膜のドライエッチング方法。
- 請求項1記載のHigh−k膜のドライエッチング方法において、前記フルオロカーボン系ガスが、C2F4,C3F8,C4F8,C4F6,C5F8のうち、少なくとも一つ以上の混合ガスであることを特徴とするHigh−k膜のドライエッチング方法。
- 請求項1記載のHigh−k膜のドライエッチング方法において、前記希ガスが、He,Ne,Ar,Kr,Xeのうち、少なくとも一つ以上の混合ガスであることを特徴とするHigh−k膜のドライエッチング方法。
- 請求項1記載のHigh−k膜のドライエッチング方法において、前記BCl3ガスに対するフルオロカーボン系ガスの流量比が2%から5%の混合ガスであることを特徴とするHigh−k膜のドライエッチング方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007232157A JP5297615B2 (ja) | 2007-09-07 | 2007-09-07 | ドライエッチング方法 |
US12/016,434 US20090065479A1 (en) | 2007-09-07 | 2008-01-18 | Dry etching method of high-k film |
TW097103948A TW200913065A (en) | 2007-09-07 | 2008-02-01 | Dry etching method of high-k film |
KR1020080015730A KR100927691B1 (ko) | 2007-09-07 | 2008-02-21 | High-k막의 드라이 에칭방법 |
US13/072,904 US20110171833A1 (en) | 2007-09-07 | 2011-03-28 | Dry etching method of high-k film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007232157A JP5297615B2 (ja) | 2007-09-07 | 2007-09-07 | ドライエッチング方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013116580A Division JP2013225680A (ja) | 2013-06-03 | 2013-06-03 | High−k膜のドライエッチング方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009064991A true JP2009064991A (ja) | 2009-03-26 |
JP2009064991A5 JP2009064991A5 (ja) | 2012-03-01 |
JP5297615B2 JP5297615B2 (ja) | 2013-09-25 |
Family
ID=40430738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007232157A Expired - Fee Related JP5297615B2 (ja) | 2007-09-07 | 2007-09-07 | ドライエッチング方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US20090065479A1 (ja) |
JP (1) | JP5297615B2 (ja) |
KR (1) | KR100927691B1 (ja) |
TW (1) | TW200913065A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011199106A (ja) * | 2010-03-23 | 2011-10-06 | Seiko Epson Corp | 圧電素子、圧電アクチュエーター、液滴噴射ヘッド及び液滴噴射装置並びに圧電素子の製造方法 |
JP2018026566A (ja) * | 2016-08-10 | 2018-02-15 | 東京エレクトロン株式会社 | ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング |
JP7482427B2 (ja) | 2020-09-08 | 2024-05-14 | パナソニックIpマネジメント株式会社 | プラズマ処理方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130115778A1 (en) * | 2011-11-04 | 2013-05-09 | Applied Materials, Inc. | Dry Etch Processes |
JP2013131587A (ja) | 2011-12-21 | 2013-07-04 | Hitachi High-Technologies Corp | プラズマ処理方法 |
JP6692754B2 (ja) | 2014-01-13 | 2020-05-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 空間的原子層堆積法による、自己整合ダブルパターニング |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5827437A (en) * | 1996-05-17 | 1998-10-27 | Lam Research Corporation | Multi-step metallization etch |
JP2001230382A (ja) * | 1999-12-22 | 2001-08-24 | Texas Instr Inc <Ti> | 強誘電性コンデンサを形成するための水素を含まない接触エッチング |
JP2005175466A (ja) * | 2003-11-26 | 2005-06-30 | Air Products & Chemicals Inc | 反応器表面から物質を除去するための方法、装置及び混合物 |
US20050215062A1 (en) * | 2004-03-16 | 2005-09-29 | Osamu Miyagawa | Method of manufacturing semiconductor device |
US7012027B2 (en) * | 2004-01-27 | 2006-03-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Zirconium oxide and hafnium oxide etching using halogen containing chemicals |
WO2006068235A1 (ja) * | 2004-12-24 | 2006-06-29 | Taiyo Nippon Sanso Corporation | 半導体処理装置のクリーニング方法およびシリコン基板のエッチング方法 |
JP2007013206A (ja) * | 1999-06-04 | 2007-01-18 | Seiko Epson Corp | 強誘電体メモリ素子及びその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10340893A (ja) * | 1997-06-09 | 1998-12-22 | Sony Corp | 電子薄膜材料のエッチング方法 |
US6841483B2 (en) * | 2001-02-12 | 2005-01-11 | Lam Research Corporation | Unique process chemistry for etching organic low-k materials |
JP4041373B2 (ja) * | 2002-09-20 | 2008-01-30 | リコー光学株式会社 | ドライエッチング方法 |
US6919272B2 (en) * | 2003-02-01 | 2005-07-19 | Newport Fab, Llc | Method for patterning densely packed metal segments in a semiconductor die and related structure |
US6911399B2 (en) * | 2003-09-19 | 2005-06-28 | Applied Materials, Inc. | Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition |
-
2007
- 2007-09-07 JP JP2007232157A patent/JP5297615B2/ja not_active Expired - Fee Related
-
2008
- 2008-01-18 US US12/016,434 patent/US20090065479A1/en not_active Abandoned
- 2008-02-01 TW TW097103948A patent/TW200913065A/zh unknown
- 2008-02-21 KR KR1020080015730A patent/KR100927691B1/ko not_active IP Right Cessation
-
2011
- 2011-03-28 US US13/072,904 patent/US20110171833A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5827437A (en) * | 1996-05-17 | 1998-10-27 | Lam Research Corporation | Multi-step metallization etch |
JP2007013206A (ja) * | 1999-06-04 | 2007-01-18 | Seiko Epson Corp | 強誘電体メモリ素子及びその製造方法 |
JP2001230382A (ja) * | 1999-12-22 | 2001-08-24 | Texas Instr Inc <Ti> | 強誘電性コンデンサを形成するための水素を含まない接触エッチング |
JP2005175466A (ja) * | 2003-11-26 | 2005-06-30 | Air Products & Chemicals Inc | 反応器表面から物質を除去するための方法、装置及び混合物 |
US7012027B2 (en) * | 2004-01-27 | 2006-03-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Zirconium oxide and hafnium oxide etching using halogen containing chemicals |
US20050215062A1 (en) * | 2004-03-16 | 2005-09-29 | Osamu Miyagawa | Method of manufacturing semiconductor device |
WO2006068235A1 (ja) * | 2004-12-24 | 2006-06-29 | Taiyo Nippon Sanso Corporation | 半導体処理装置のクリーニング方法およびシリコン基板のエッチング方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011199106A (ja) * | 2010-03-23 | 2011-10-06 | Seiko Epson Corp | 圧電素子、圧電アクチュエーター、液滴噴射ヘッド及び液滴噴射装置並びに圧電素子の製造方法 |
JP2018026566A (ja) * | 2016-08-10 | 2018-02-15 | 東京エレクトロン株式会社 | ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング |
JP7482427B2 (ja) | 2020-09-08 | 2024-05-14 | パナソニックIpマネジメント株式会社 | プラズマ処理方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100927691B1 (ko) | 2009-11-18 |
US20090065479A1 (en) | 2009-03-12 |
JP5297615B2 (ja) | 2013-09-25 |
US20110171833A1 (en) | 2011-07-14 |
KR20090026014A (ko) | 2009-03-11 |
TW200913065A (en) | 2009-03-16 |
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