JP2009049119A - Base member, its manufacturing method, stage device, and exposure device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a base member capable of suppressing air fluctuation due to a down flow, its manufacturing method, a stage device, and an exposure device. <P>SOLUTION: A guide face to guide a moving object 22 to one face 24a is formed in this base member. This base member is equipped with a suction part 1 to attract gas around one face side, and an adjusting device 2 to adjust the flow of the gas on one face side. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a base member, a manufacturing method thereof, a stage apparatus, and an exposure apparatus.

In lithography processes for manufacturing semiconductor elements, liquid crystal display elements, etc., step-and-repeat reduction projection exposure apparatuses (so-called steppers), step-and-scan scanning projection exposure apparatuses (so-called scanning steppers), etc. The exposure apparatus is used.
In these exposure apparatuses, miniaturization of circuit patterns formed on a photosensitive substrate is demanded as semiconductor elements and the like are highly integrated. In order to realize miniaturization of circuit patterns, it is necessary to control the temperature state of an exposure apparatus, which is a very precise apparatus, to be constant and to exhibit desired performance.
For this reason, for example, as shown in Patent Document 1, in an exposure apparatus, the exposure apparatus main body is accommodated in a chamber, and the space inside the chamber is controlled to have a uniform temperature distribution.

In this type of exposure apparatus, uniform downflow temperature-controlled gas is supplied to substantially the entire surface of the space in which the substrate stage on which the photosensitive substrate is placed is accommodated, thereby eliminating air fluctuation and temperature unevenness. As a result, the accuracy of positioning of the substrate stage is improved.
International Publication No. 02/101804 Pamphlet

However, the following problems exist in the conventional technology as described above.
Since the temperature control gas supplied by the down flow is blocked by a surface plate that is a base member that guides the movement of the substrate stage from below, the down flow is disturbed. Further, as the substrate stage moves on the surface plate, the temperature-controlled gas that has been dammed up is wound up, which may cause air fluctuations, that is, cause the positioning accuracy of the substrate stage to decrease. In particular, the upper part of the surface plate is the optical path of the interferometer that measures the position information of the substrate stage, so if the flow of temperature-controlled gas located in this optical path is disturbed, it becomes air fluctuations and the measurement result of the interferometer High potential for adverse effects.

  The present invention has been made in consideration of the above points, and an object of the present invention is to provide a base member, a manufacturing method thereof, a stage apparatus, and an exposure apparatus that can suppress air fluctuation due to downflow.

In order to achieve the above object, the present invention adopts the following configuration corresponding to FIGS. 1 to 7 showing the embodiment.
The base member of the present invention is a base member (24) in which a guide surface (24b) for guiding a moving object (22) is formed on one surface (24a). A suction part (1) for suction and an adjusting device (2) for adjusting the flow of gas on one surface side are provided.
Therefore, in the base member of the present invention, when the downflow is performed toward the one surface (24a) that is the guide surface side, the gas that has reached one surface is not blocked and the suction portion (1) The flow is adjusted through suction. Therefore, in the present invention, it is possible to suppress air fluctuation by suppressing the downflow flow from being disturbed.

The stage apparatus according to the present invention includes the base member (24) described above and a stage (22) as a moving object that moves on the guide surface (24b) of the base member. is there.
Therefore, in the stage apparatus of the present invention, air fluctuation can be suppressed and the positioning accuracy of the stage (22) can be improved.

And the exposure apparatus of this invention is equipped with the stage apparatus (20) described previously, It is characterized by the above-mentioned.
Therefore, in the exposure apparatus of the present invention, air fluctuation is suppressed and the stage positioning accuracy is improved, so that the exposure accuracy (pattern transfer accuracy) can be improved.

The base member manufacturing method of the present invention includes a step of forming a base member body with a porous material, and a step of smoothing a part of one surface (24a) of the base member body to form a guide surface (24b). And a step of providing an adjusting device (2) for sucking the gas on the one surface side through the porous material exposed on the one surface and adjusting the flow of the gas on the one surface side. To do.
Therefore, in the base member manufacturing method of the present invention, the moving object can smoothly move on the smoothed guide surface. In the present invention, when the downflow is performed toward the one surface (24a) which is the guide surface side, the gas that has reached one surface is sucked through the porous material without being blocked. The flow will be adjusted. Therefore, in the present invention, it is possible to suppress air fluctuation by suppressing the downflow flow from being disturbed.

  In order to explain the present invention in an easy-to-understand manner, the description has been made in association with the reference numerals of the drawings showing one embodiment, but it goes without saying that the present invention is not limited to the embodiment.

  In this invention, it can suppress that the gas supplied by the downflow is disturb | confused and becomes air fluctuation, and can suppress the positioning accuracy fall resulting from air fluctuation.

  Embodiments of a base member, a manufacturing method thereof, a stage apparatus, and an exposure apparatus according to the present invention will be described below with reference to FIGS.

(First embodiment)
FIG. 1 is a schematic diagram showing a configuration of an exposure apparatus EX according to the first embodiment.
The exposure apparatus EX transfers the pattern formed on the reticle R to each shot area on the wafer W via the projection optical system 16 while moving the reticle R and the wafer W synchronously in a one-dimensional direction. This is a scanning type exposure apparatus, that is, a so-called scanning stepper.
The exposure apparatus EX includes an exposure apparatus main body 10, a main body chamber 40 that is installed on the floor surface F in the clean room and accommodates the exposure apparatus main body 10, and a machine room 70 disposed adjacent to the main body chamber 40. Prepare.

  The exposure apparatus main body 10 has an illumination optical system 12 that illuminates the reticle R with exposure light EL, a reticle stage 14 that is movable while holding the reticle R, and a projection that projects the exposure light EL emitted from the reticle R onto the wafer W. The optical system 16, the wafer stage 20 as a stage device that can move while holding the wafer W, the main body column 30 that holds the projection optical system 16 and the like, and on which the wafer stage 20 is mounted, and the exposure apparatus EX are comprehensively controlled. And a control device (not shown).

The illumination optical system 12 illuminates the reticle R supported by the reticle stage 14 with the exposure light EL, and an optical integrator and a condenser that uniformize the illuminance of the exposure light EL emitted from an exposure light source (not shown). A lens, a relay lens system, a variable field stop for setting the illumination area by the exposure light EL on the reticle R in a slit shape (all not shown), and the predetermined illumination area on the reticle R has a more uniform illumination distribution It is possible to illuminate with the exposure light EL.
The exposure light EL emitted from the exposure light source is, for example, an ultraviolet emission line (g line, h line, i line) emitted from a mercury lamp, KrF excimer laser light (wavelength 248 nm), ArF excimer laser light. Ultraviolet light such as (wavelength 193 nm) is used.

The reticle stage 14 performs two-dimensional movement and minute rotation in a plane perpendicular to the optical axis AX of the projection optical system 16 while supporting the reticle R.
The position and rotation angle of the reticle R on the reticle stage 14 in a two-dimensional direction are measured in real time by a laser interferometer (not shown), and the measurement result is output to the control device. Then, the controller R drives a linear motor or the like based on the measurement result of the laser interferometer, thereby positioning the reticle R supported by the reticle stage 14.
The reticle stage 14 is supported by a support column 36.

The projection optical system 16 projects and exposes a pattern formed on the reticle R onto the wafer W at a predetermined projection magnification, and includes a plurality of optical elements and a lens barrel 17 that accommodates the optical elements. . In the present embodiment, the projection optical system 16 is a reduction system having a projection magnification β of, for example, 1/4 or 1/5. Note that the projection optical system 16 may be either an equal magnification system or an enlargement system.
The projection optical system 16 is inserted into and supported by a hole (not shown) provided in the top plate of the main column 34 via a sensor column 35. The sensor column 35 is provided with various sensors such as an autofocus sensor and an alignment sensor (both not shown).

  The wafer stage 20 holds the wafer W and can move in three directions of freedom in the X direction, Y direction, and θZ direction, and an XY table 22 on the upper surface (one surface) 24a. And a wafer surface plate (base member) 24 that supports and guides the substrate in a movable manner in the XY plane. The XY table 22 is provided with a vacuum preload type air pad 21 at a position facing the upper surface 24 a of the wafer surface plate 24. The air pad 21 blows air (air) toward the wafer surface plate 24 to support the XY table 22 in a floating manner (non-contact support) with respect to the wafer surface plate 24 through a clearance of, for example, several microns. .

  The wafer surface plate 24 is made of, for example, invar, cast iron such as gray cast iron (FC) or ductile cast iron (FCD), stainless steel, and the like, and as shown in FIG. Has a hollow structure formed. Further, the wafer surface plate 24 includes a porous part (suction part) 1 provided on the upper surface 24 a and an adjusting device 2 that adjusts the gas flow on the upper surface 24 a side through the porous part 1. ing.

  The porous portion 1 is formed of a metal sintered body or the like, and a guide surface 24b for guiding the air pad 21 when the XY table 22 moves in the surface plate upper surface 24a (shown by a two-dot chain line in FIG. 2A). (Range) is extended in the X direction at a portion where no area is formed, and is arranged at two locations. Further, as shown in FIG. 1, the porous portion 1 faces the back surface across a plurality of hollow portions 23 formed on the wafer surface plate 24, and the surface faces the surface plate upper surface 24a. Is provided.

  The adjusting device 2 sucks the plurality of hollow portions 23 independently through the piping 3 connected to each of the hollow portions 23 facing the porous portion 1 and the piping 3, that is, the piping 3 and the hollow portion 23. And a suction device 4 for sucking gas around the upper surface 24a side through the porous portion 1. The negative pressure suction operation by the suction device 4 is controlled by the control device.

  A movable mirror 26 is provided on the wafer stage 20, and a laser interferometer 28 is provided at a position facing this. The position and rotation angle of the wafer stage 20 in the two-dimensional direction are measured in real time by the laser interferometer 28, and the measurement result is output to the control device. The controller drives the linear motor or the like based on the measurement result of the laser interferometer 28, thereby controlling the position, moving speed, and the like of the wafer W held on the wafer stage 20.

The main body column 30 is supported above a base plate 38 installed on the bottom surface of the main body chamber 40 via a plurality of vibration isolation tables 32. The main body column 30 includes a main column 34 supported by a vibration isolation table 32 and a support column 36 provided upright on the main column 34.
The projection optical system 16 is supported on the main frame that is the ceiling of the main column 34. The support column 36 supports the reticle stage 14 and the illumination optical system 12.

The main body chamber 40 includes an exposure chamber 42 in which environmental conditions (cleanness, temperature, pressure, etc.) are maintained substantially constant, and a reticle loader chamber and a wafer loader chamber (not shown) arranged on the side of the exposure chamber 42. It is formed to have. In the exposure chamber 42, the exposure apparatus main body 10 is disposed.
A jet outlet 50 connected to a machine room (gas supply source) 70 for supplying temperature-controlled air (gas) A into the main body chamber 40 is provided on the upper side surface of the exposure chamber 42. The temperature-controlled air A sent from the machine chamber 70 is sent from the jet outlet 50 into the upper space 44 of the exposure chamber 42 by side flow.

A return portion 52 is provided at the bottom of the exposure chamber 42, and one end of a return duct 54 is connected to the lower portion of the return portion 52. The other end of the return duct 54 is connected to the machine room 70.
In addition, a return duct 56 is connected to a plurality of locations on the lower side surface and the bottom surface of the main column 34, and the other end of the return duct 56 is connected to the machine room 70. That is, although not shown, the return duct 56 includes a plurality of branch paths, and each branch path is connected to a plurality of locations on the lower side surface and the bottom surface of the main column 34.
The air A in the exposure chamber 42 is returned to the machine chamber 70 through the return ducts 54 and 56 from the return portion 52 and the like.

An air supply line 60 connected to the machine chamber 70 is connected to the side surface of the exposure chamber 42 and further extends into the exposure chamber 42. Inside, a heater 62, a blower 64, a chemical filter CF, and a filter box AF are sequentially arranged.
Further, the air supply line 60 is branched into three branch paths 66a, 66b, 66c. The branch path 66a is routed through a temperature stabilization flow path device 80a, the branch path 66b is routed through a temperature stabilization flow path device 80b, and the branch path 66c is routed through a temperature stabilization flow path device 80c (not shown). It is connected to a stage space 46 inside the main column 34.
The temperature stabilization flow path devices 80a, 80b, and 80c are devices that further accurately regulate the temperature of the air A by performing heat exchange with the air A supplied from the air supply pipe 60. . Specifically, a temperature-stabilized flow path device disclosed in JP-T-2002-101804 is used.

And the temperature control apparatus 90 is connected to each of the temperature stabilization flow path apparatus 80a, 80b, 80c via the supply pipe | tube 92 and the discharge pipe 94. FIG. Thereby, a circulation path of the temperature adjusting medium C including the temperature adjusting device 90, the supply pipe 92, the temperature stabilizing flow path devices 80a, 80b, 80c, and the discharge pipe 94 is configured.
Further, as the temperature adjustment medium C, for example, Fluorinert (registered trademark) is used, and the temperature is adjusted to a substantially constant temperature by the temperature adjustment device 90. Thereby, the temperature stabilization flow path apparatus 80a, 80b, 80c is maintained at a constant temperature. In addition, as the temperature control medium C, hydrofluoroether (HFE) or water can also be used.

Gas chambers (blowing devices) 102a to 102c (102c not shown) are arranged on the ceiling portion of the stage space 46 inside the main column 34, and the above-described three branch paths 66a, 66b, and 66c are connected to each other. .
The gas chambers 102a to 102c introduce air A sent from the branch paths 66a, 66b, and 66c, and direct the air A toward the wafer stage 20 disposed in the stage space 46, which is wider than the wafer stage 20. A flow channel (duct) for supplying by downflow is formed in the range. The gas chambers 102 a to 102 c are spaces around the lower end of the projection optical system 16, except for the space excluding the lens barrel 17, the autofocus sensor disposed in the sensor column 35, and the alignment sensor (both not shown). Arranged to fill.

Next, the operation of the exposure apparatus EX, particularly the air conditioning method will be described.
First, the machine room 70 is operated by the control device, and the temperature-controlled air A is supplied toward the exposure room 42. Thereby, in the exposure chamber 42, the temperature-controlled air A is sent from the jet nozzle 50 to the upper space 44 of the exposure chamber 42 with a uniform side flow.
Further, the temperature-controlled air A is sent to the gas chambers 102a, 102b, and 102c disposed in the stage space 46 inside the main column 34 through the branch paths 66a, 66b, and 66c. Then, the air A sent into the gas chambers 102a, 102b, and 102c passes through the vent hole and is sent into the stage space 46 in a down flow. At this time, the air A sent into the stage space 46 is supplied after the pressure in the gas chambers 102a, 102b, and 102c is substantially constant. Accordingly, the air A having a substantially constant pressure is fed into the stage space 46 at a uniform wind speed.

On the other hand, in the wafer surface plate 24, the gas (air A) around the upper surface 24 a side is sucked under negative pressure through the pipe 3, the hollow portion 23 and the porous portion 1 by driving the suction device 4 in the adjustment device 2. At this time, the control device causes the flow rate of the air A per unit time sent from the gas chambers 102 a, 102 b, 102 c to the upper surface 24 a of the wafer surface plate 24 by the down flow, and the adjustment device 2 through the porous portion 1. The flow rate of the gas around the upper surface 24a to be sucked is made to be substantially the same amount.
As a result, the air A that has reached the upper surface 24a of the wafer surface plate 24 by the downflow is blocked by the upper surface 24a, and smoothly flows substantially downward as shown in FIG. A simple flow is formed and sucked into the porous portion 1. That is, in this embodiment, the air A supplied by the downflow can be smoothly rectified and adjusted.
Therefore, generation of measurement errors in the laser interferometer 28 and the like is prevented. In addition, since the temperature of the wafer stage 20 disposed in the stage space 46 is substantially uniformly controlled, the wafer stage 20 can be functioned (driven) with high accuracy.

The air A sent into the stage space 46 is exhausted to the return duct 56 from the lower end side surface or the like of the main column 34 and returned to the machine room 70. Further, the air A sent into the exposure chamber 42 is exhausted to the return duct 54 and returned to the machine chamber 70.
Thus, the exposure chamber 42 and the stage space 46 of the main column 34 are air-conditioned.

Then, exposure processing by the exposure apparatus main body 10 is performed in a state where such temperature control is performed. Specifically, a pattern is formed after exposure light EL emitted from an exposure light source (not shown) is shaped to a required size and illuminance uniformity in the illumination optical system 12 including various lenses and mirrors. The reticle R is illuminated, and the pattern formed on the reticle R is reduced and transferred to each shot area on the wafer W held on the wafer stage 20 via the projection optical system 16.
Thereby, a fine pattern is formed on the wafer W with high accuracy.

  As described above, in the present embodiment, the air around the upper surface 24a side of the wafer surface plate 24 is sucked to adjust the gas flow, so that the air A supplied by the downflow is blocked and flows. It is possible to suppress the adverse effect on the measurement result of the laser interferometer 28 due to air fluctuation. Therefore, in the present embodiment, it is possible to position the wafer W with high accuracy while suppressing a decrease in positioning accuracy of the wafer stage 20 due to air fluctuation.

Further, in this embodiment, since the gas around the upper surface 24a side is sucked through the porous portion 1, uniform suction can be performed without causing a bias, and as a result, a stable downflow flow is maintained. can do. In particular, in the present embodiment, since suction is performed through a plurality of hollow portions 23 formed in a partitioned manner, uniform air suction can be performed over the length direction of the porous portion 1, and the porous portion Even when the porosity of 1 is uneven and the suction amount is uneven, by adjusting the suction amount according to the porosity for each hollow portion 23, the gas suction amount around the upper surface 24a side is made uniform. It becomes possible to adjust to.
In the present embodiment, the porous portion 1 is disposed in the upper surface 24a of the wafer surface plate 24 in a portion where the guide surface 24b for guiding the air pad 21 when the XY table 22 moves is not formed. Therefore, stable movement of the XY table 22 can be ensured.

(Second Embodiment)
Next, a second embodiment of the wafer surface plate 24 will be described with reference to FIG.
In this figure, the same components as those of the first embodiment shown in FIGS. 1 and 2 are denoted by the same reference numerals, and the description thereof is omitted.

In the present embodiment, as shown in FIG. 3, the porous portion 1 and the hollow portion 23 are formed on the wafer surface plate so that the plurality of porous portions 1 face each air bearing 21 and suck the gas. 24 is arranged over the entire upper surface 24a.
Moreover, in the adjustment apparatus 2 of this embodiment, the solenoid valve 5 for adjusting the amount of attraction | suction for every piping 3 connected to the hollow part 23 is provided. The operation of each electromagnetic valve 5 is controlled by a valve control device 6. The control device controls the valve control device 6 based on the measurement result of the laser interferometer 28.

  As indicated by an arrow H in FIG. 3, the air bearing 21 is fixed between the wafer surface plate 24 (upper surface 24 a) by the balance between the repulsive force caused by the blowing of gas and the suction force with respect to the wafer surface plate 24. A preload type gas bearing that maintains a gap (gap) is formed, and a suction force to the wafer surface plate 24 is applied by the suction device 4.

  That is, in the present embodiment, among the plurality of hollow portions 23 and the porous portion 1, for the hollow portion 23 and the porous portion 1 that are not opposed to the air bearing 21, the valve control device 6 is based on a command from the control device. Adjusts the opening degree of the electromagnetic valve 5, the flow rate of the air A per unit time sent to the upper surface 24 a of the wafer surface plate 24 by the down flow described above, and the adjustment device 2 through the porous portion 1. The flow rate of the gas around the upper surface 24a to be sucked is made substantially the same amount.

  On the other hand, for the hollow portion 23 and the porous portion 1 facing the air bearing 21, the valve controller 6 adjusts the opening degree of the electromagnetic valve 5 based on a command from the controller, and the wafer surface plate 24 (upper surface 24a). A gas between the air bearing 21 and the air bearing 21 is sucked with a suction amount (suction force) that maintains a constant gap (gap) between the two. In this case, it is preferable to suck through the porous portion 1 at a position away from the position where the gas H is blown out from the air bearing 21.

  That is, in this embodiment, in addition to obtaining the same operation and effect as those in the first embodiment, the hollow portion 23 and the porous material are formed according to the position of the air bearing 21 based on the measurement result of the laser interferometer 28. By adjusting the amount of suction through the unit 1, the flow of downflow is disturbed and air fluctuations are suppressed, and the measurement result of the laser interferometer 28 is suppressed from being adversely affected. Can be supplied in a non-contact manner. Therefore, in the present embodiment, it is possible to reduce the supply system for supplying negative pressure to the XY table 22, and the drive controllability and drive accuracy of the XY table 22 can be improved.

(Third embodiment)
Next, a third embodiment of the wafer surface plate 24 will be described with reference to FIG.
In this figure, the same components as those of the second embodiment shown in FIG. 3 are denoted by the same reference numerals, and the description thereof is omitted.
In the second embodiment, the negative pressure is supplied from the wafer surface plate 24 to the air bearing 21. However, in this embodiment, compressed air that generates a repulsive force of the air bearing 21 against the wafer surface plate 24 is also used. It is given by the adjusting device 4.

  Specifically, as shown in FIG. 4, each hollow portion 23 is connected to a pipe 8 provided with an electromagnetic valve 7 in addition to a pipe 3 for suctioning negative pressure. It is connected to an air supply device (gas supply device) 9 for supplying compressed air (compressed gas). The operation of each electromagnetic valve 7 is controlled independently by the valve control device 6. The control device controls the valve control device 6 (that is, the electromagnetic valves 5 and 7) based on the measurement result of the laser interferometer 28.

  In the wafer stage 20 having the above-described configuration, the hollow portion 23 and the porous portion 1 that are not opposed to the air bearing 21 among the plurality of hollow portions 23 and the porous portion 1 as in the second embodiment, Based on the command of the control device, the valve control device 6 closes the electromagnetic valve 7 and adjusts the opening degree of the electromagnetic valve 5, and per unit time sent toward the upper surface 24 a of the wafer surface plate 24 by the down flow described above. The flow rate of the air A and the flow rate of the gas around the upper surface 24a sucked through the porous portion 1 by the adjusting device 2 are made substantially the same amount.

  Of the hollow portion 23 and the porous portion 1 facing the air bearing 21, the porous portion 1 that supplies compressed air to the air bearing 21 (for example, the porous portion at a position facing the substantially central portion of the air bearing 21. For the mass portion 1), the valve control device 6 closes the electromagnetic valve 5 and opens the electromagnetic valve 7 based on the command of the control device, so that the pipe 8, the hollow portion 23 and the porous portion 1 are opened from the air supply device 9. Then, the compressed air is supplied to the air bearing 21 as utility (repulsive force).

Further, among the hollow portion 23 and the porous portion 1 facing the air bearing 21, the porous portion 1 that supplies a negative pressure (suction force) to the air bearing 21 (for example, compressed air is supplied to the air bearing 21. For the porous portions 1) on both sides of the porous portion 1, the valve control device 6 closes the electromagnetic valve 7 and adjusts the opening of the electromagnetic valve 5 based on the command from the control device. The gas between the air bearing 21 and the air bearing 21 is sucked with a suction amount (suction force) that maintains a constant gap (gap) with the air bearing 24 (the upper surface 24a).
The negative pressure supply and the compressed air supply to the air bearing 21 are switched by controlling the electromagnetic valves 5 and 7 according to the relative position with the air bearing 21 as the XY table 22 moves. As a result, the XY table 22 can move smoothly along the upper surface 24 a of the wafer surface plate 24.

  As described above, in this embodiment, in addition to obtaining the same operation and effect as those of the second embodiment, an air bearing can be provided without providing piping for supplying negative / positive pressure to the XY table 22. 21 can function as a gas bearing. Therefore, in this embodiment, it is possible to further reduce the piping connected to the XY table 22, and the drive controllability and drive accuracy of the XY table 22 can be further improved.

  As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

For example, in the above embodiment, the air around the upper surface 24a is sucked by the suction device 4 through the porous portion 1, the hollow portion 23, and the pipe 3, but the present invention is not limited to this, and the pipe 3 is not limited to this. It is good also as a structure connected to the return duct 56. FIG.
Moreover, in the said embodiment, although it was set as the structure which uses a gas bearing as a non-contact type bearing, it is not limited to this, For example, it is good also as a structure which uses a magnetic bearing (magnetic bearing).

In the above embodiment, the stage apparatus according to the present invention is applied to the wafer stage 20, but may be applied to the reticle stage 14.
Further, in the above embodiment, the base member and the stage apparatus of the present invention are applied to the exposure apparatus EX. However, the present invention is not limited to this. The present invention is also applicable to precision measuring instruments such as a drawing apparatus and a mask pattern position coordinate measuring apparatus.

  In the first embodiment, the porous portion 1 is provided in the portion where the guide surface 24b is not formed. In addition, the wafer surface plate main body having the hollow portion 23 is the porous material described above. In the upper surface 24a, the region to be the guide surface 24b is smoothed by coating using spraying or the like, and the adjusting device 2 (pipes 3, 8, electromagnetic valves 5, 7, suction device) 4), the wafer surface plate (base member) 24 can be manufactured.

  The substrate (object) in each of the above embodiments is not limited to a semiconductor wafer for manufacturing a semiconductor device, but a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or a mask or reticle used in an exposure apparatus. The original plate (synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus EX, in addition to the step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the reticle R by synchronously moving the reticle R and the wafer W, the reticle R and the wafer W It can also be applied to a step-and-repeat projection exposure apparatus (stepper) in which the pattern of the reticle R is collectively exposed while the wafer is stationary and the wafer W is sequentially moved stepwise. The present invention can also be applied to a step-and-stitch type exposure apparatus that partially transfers at least two patterns on the wafer W.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern onto the wafer W, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD). ) Or an exposure apparatus for manufacturing reticles or masks.

The light source of the exposure apparatus to which the present invention is applied includes not only KrF excimer laser (248 nm), ArF excimer laser (193 nm), F ₂ laser (157 nm), but also g-line (436 nm) and i-line (365 nm). ) Can be used. Further, the magnification of the projection optical system may be not only a reduction system but also an equal magnification or an enlargement system. In the above embodiment, the catadioptric projection optical system is exemplified, but the present invention is not limited to this, and the optical axis (reticle center) of the projection optical system and the center of the projection area are set at different positions. It can also be applied to a refraction type projection optical system.

  Further, the present invention is applied to a so-called immersion exposure apparatus in which a liquid is locally filled between the projection optical system and the substrate, and the substrate is exposed through the liquid. It is disclosed in the publication No. 99/49504 pamphlet. Further, in the present invention, the entire surface of the substrate to be exposed as disclosed in JP-A-6-124873, JP-A-10-303114, US Pat. No. 5,825,043 and the like is in the liquid. The present invention is also applicable to an immersion exposure apparatus that performs exposure while being immersed.

The present invention can also be applied to a twin stage type exposure apparatus provided with a plurality of substrate stages (wafer stages). The structure and exposure operation of a twin stage type exposure apparatus are described in, for example, Japanese Patent Laid-Open Nos. 10-163099 and 10-214783 (corresponding US Pat. Nos. 6,341,007, 6,400,441, 6,549). , 269 and 6,590,634), JP 2000-505958 (corresponding US Pat. No. 5,969,441) or US Pat. No. 6,208,407. Furthermore, the present invention may be applied to the wafer stage disclosed in Japanese Patent Application No. 2004-168482 filed earlier by the present applicant.
In this way, when a plurality of stages are provided and each moves independently, a guide surface (guide surface) 24b is provided for each stage on the surface plate (base member) 24 as shown in FIG. Will be. Even in such a case, the porous member 1 may be disposed in a portion where the guide surface 24b is not formed.

  An exposure apparatus to which the present invention is applied assembles various subsystems including the constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. It is manufactured by. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

Next, an embodiment of a manufacturing method of a micro device using the exposure apparatus and the exposure method according to the embodiment of the present invention in the lithography process will be described. FIG. 6 is a flowchart showing a manufacturing example of a micro device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micro machine, or the like).
First, in step S10 (design step), function / performance design (for example, circuit design of a semiconductor device) of a micro device is performed, and pattern design for realizing the function is performed. Subsequently, in step S11 (mask manufacturing step), a mask (reticle) on which the designed circuit pattern is formed is manufactured. On the other hand, in step S12 (wafer manufacturing step), a wafer is manufactured using a material such as silicon.
Next, in step S13 (wafer processing step), using the mask and wafer prepared in steps S10 to S12, an actual circuit or the like is formed on the wafer by lithography or the like, as will be described later. Next, in step S14 (device assembly step), device assembly is performed using the wafer processed in step S13. This step S14 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation) as necessary. Finally, in step S15 (inspection step), inspections such as an operation confirmation test and a durability test of the microdevice manufactured in step S14 are performed. After these steps, the microdevice is completed and shipped.

FIG. 7 is a diagram illustrating an example of a detailed process of step S13 in the case of a semiconductor device.
In step S21 (oxidation step), the surface of the wafer is oxidized. In step S22 (CVD step), an insulating film is formed on the wafer surface. In step S23 (electrode formation step), an electrode is formed on the wafer by vapor deposition. In step S24 (ion implantation step), ions are implanted into the wafer. Each of the above steps S21 to S24 constitutes a pre-processing process at each stage of the wafer processing, and is selected and executed according to a necessary process at each stage.
At each stage of the wafer process, when the above pre-process is completed, the post-process is executed as follows. In this post-processing process, first, in step S25 (resist formation step), a photosensitive agent is applied to the wafer. Subsequently, in step S26 (exposure step), the circuit pattern of the mask is transferred to the wafer by the lithography system (exposure apparatus) and the exposure method described above. Next, in step S27 (development step), the exposed wafer is developed, and in step S28 (etching step), exposed members other than the portion where the resist remains are removed by etching. In step S29 (resist removal step), the resist that has become unnecessary after the etching is removed. By repeatedly performing these pre-processing steps and post-processing steps, multiple circuit patterns are formed on the wafer.

  Further, in order to manufacture reticles or masks used in not only microdevices such as semiconductor elements but also light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, etc., from mother reticles to glass substrates and The present invention can also be applied to an exposure apparatus that transfers a circuit pattern to a silicon wafer or the like. Here, in an exposure apparatus using DUV (deep ultraviolet), VUV (vacuum ultraviolet) light, or the like, a transmission type reticle is generally used. As a reticle substrate, quartz glass, fluorine-doped quartz glass, fluorite, Magnesium fluoride or quartz is used. In proximity-type X-ray exposure apparatuses, electron beam exposure apparatuses, and the like, a transmissive mask (stencil mask, membrane mask) is used, and a silicon wafer or the like is used as a mask substrate. Such an exposure apparatus is disclosed in WO99 / 34255, WO99 / 50712, WO99 / 66370, JP-A-11-194479, JP-A2000-12453, JP-A-2000-29202, and the like. .

It is a schematic diagram which shows the structure of the exposure apparatus EX which concerns on 1st Embodiment. (A) of a wafer surface plate is a top view, (b) is sectional drawing. It is a partial block diagram of the wafer stage which concerns on 2nd Embodiment. It is a partial block diagram of the wafer stage which concerns on 3rd Embodiment. It is a top view of the wafer surface plate which concerns on a twin stage structure. It is a flowchart which shows an example of the manufacturing process of the microdevice of this invention. It is a figure which shows an example of the detailed process of step S13 in FIG.

Explanation of symbols

  EX ... exposure apparatus, 1 ... porous part (suction part), 2 ... adjustment apparatus, 20 ... wafer stage (stage apparatus), 22 ... XY table (moving object, stage), 23 ... hollow part, 24 ... wafer surface plate (Base member), 24a ... upper surface (one surface), 24b ... guide surface (guide surface), 102, 102a-102c ... gas chamber (blowing device)

Claims (12)

A base member on which a guide surface for guiding a moving object is formed on one surface,
A suction part for sucking gas around the one surface side;
A base member comprising: an adjusting device that adjusts a gas flow on the one surface side. The suction part includes a porous part provided on the one surface,
The base member according to claim 1, wherein a gas around the one surface side is sucked through the porous portion.   The base member according to claim 2, wherein the suction operation by the porous portion is performed in a portion of the one surface where the guide surface is not formed. It has a main body containing a porous material,
The base member according to claim 3, wherein the guide surface is formed by smoothing a part of the porous material with another member.   The base member according to any one of claims 1 to 4, wherein the adjusting device sucks the gas on the one surface side through a hollow portion provided inside the porous portion. The hollow portion is partitioned and provided with a plurality,
The base member according to claim 5, wherein the adjusting device performs suction independently for each of the plurality of hollow portions.   The base member of Claim 6 which has a gas supply apparatus which supplies compressed gas independently for every said some hollow part. A base member according to any one of claims 1 to 7;
And a stage as the moving object that moves on the guide surface of the base member. The stage is movably supported by a non-contact type bearing formed between the stage and the guide surface,
The stage device according to claim 8, wherein the porous portion is provided at a position where the non-contact type bearing is not formed. The adjusting device has a blowing device for blowing gas toward the one surface of the base member,
The stage apparatus according to claim 8 or 9, wherein the gas flow from the blowing device toward the suction portion is created.   An exposure apparatus comprising the stage apparatus according to any one of claims 8 to 10. Forming a base member body with a porous material;
Smoothing a part of one surface of the base member body to form a guide surface;
And a step of providing an adjusting device for sucking the gas on the one surface side through the porous material exposed on the one surface and adjusting the flow of the gas on the one surface side.

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