JP2008301328A - Ccd solid-state imaging element and driving method thereof, and imaging element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To achieve noise reduction during moving-image imaging in a CCD solid-state imaging element. <P>SOLUTION: The CCD solid-state imaging element is provided with a pixel for luminance detection in addition to a color-filter mounting pixel. During still-image imaging, the element outputs an imaging signal, which corresponds to a detection charge of a pixel laminated with a transparent filter W, and an imaging signal which corresponds to a detection charge of a pixel laminated with a color filter RGB. During moving-image imaging, the element outputs the imaging signal, which corresponds to the detection charge of the pixel laminated with the color filter RGB, and stops the output of the imaging signal which corresponds to the detection charge of the pixel laminated with the transparent filter W. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a CCD solid-state imaging device including a luminance detection pixel in addition to a color signal detection pixel, a driving method thereof, and an imaging apparatus equipped with the solid-state imaging device.

  A CCD (Charge Coupled Device) type solid-state imaging device includes a plurality of photoelectric conversion elements that accumulate signal charges according to the amount of incident light, and a plurality of photoelectric conversions that are arranged in a two-dimensional array on the substrate surface. A plurality of vertical charge transfer paths provided along each photoelectric conversion element row of the element, and a horizontal charge transfer path formed along the transfer direction end of each vertical charge transfer path, The detected charge is read to the adjacent vertical charge transfer path and transferred in the vertical direction, and the signal charge transferred from the vertical charge transfer path to the horizontal charge transfer path is then transferred and output in the horizontal direction.

  In such a CCD solid-state imaging device, according to the prior art disclosed in Patent Document 1 previously proposed by the present applicant, each vertical charge transfer is performed between the end of the vertical charge transfer path and the horizontal charge transfer path. A buffer memory (called a line memory because each vertical charge transfer path has a buffer unit) for temporarily storing each signal charge received from the path and transferring it to the horizontal charge transfer path according to the instruction timing is provided. (The signal charges of the photoelectric conversion elements adjacent in the horizontal direction are added.).

JP 2006-157624 A

  The above-described line memory performs pixel addition in the horizontal direction. However, when applied to a CCD solid-state imaging device having a novel pixel arrangement, signal reading and various image processing corresponding to various image processing can be performed instead of pixel addition. Acquisition of high-quality captured image data is expected.

  An object of the present invention is to provide a useful element driving method, an imaging apparatus, and a CCD solid-state image sensor when a line memory is applied to a CCD solid-state image sensor having a novel pixel arrangement structure.

  The CCD solid-state image pickup device driving method according to the present invention includes a plurality of photoelectric conversion elements in which a surface of a semiconductor substrate is arranged in a two-dimensional array, and even rows are shifted by 1/2 pitch with respect to odd rows. A transparent filter stacked on one of the odd-numbered and even-numbered photoelectric conversion element rows; and a color filter stacked on the other of the odd-numbered and even-numbered photoelectric conversion element rows; A plurality of vertical charge transfer paths meandering along each photoelectric conversion element array, a horizontal charge transfer path provided along the transfer direction end of each vertical charge transfer path, and the vertical charge transfer path In the method of driving a CCD solid-state imaging device comprising the horizontal charge transfer path side last row of the vertical charge transfer path controlled by a drive pulse independent of the transfer pulse of An image pickup signal corresponding to the detection charge of the photoelectric conversion element layered and an image pickup signal corresponding to the detection charge of the photoelectric conversion element layered with the color filter are output, and the photoelectric conversion layered with the color filter during moving image capturing An imaging signal corresponding to the detected charge of the element is output, and output of the imaging signal corresponding to the detected charge of the photoelectric conversion element on which the transparent filter is laminated is stopped.

  The moving image capturing of the CCD type solid-state imaging device driving method of the present invention includes a preliminary operation for capturing a still image.

  The CCD solid-state imaging device driving method according to the present invention includes a detection charge transfer packet of the photoelectric conversion element on which the transparent filter that becomes an empty packet on the horizontal charge transfer path is stacked at the time of moving image capturing. The smear charges are inserted and transferred, and a signal corresponding to the amount of smear charges is output.

  The imaging device according to the present invention includes a plurality of photoelectric conversion elements arranged in a two-dimensional array on a surface portion of a semiconductor substrate and formed by shifting even-numbered rows by 1/2 pitch with respect to odd-numbered rows, the odd-numbered rows and the odd-numbered rows A transparent filter laminated on one of the even-numbered photoelectric conversion element rows, a color filter laminated on the other photoelectric conversion element row of the odd-numbered row and the even-numbered row, and each photoelectric conversion element column The vertical charge transfer paths meandering along the vertical charge transfer paths, horizontal charge transfer paths provided along the transfer direction ends of the vertical charge transfer paths, and transfer pulses of the vertical charge transfer paths are independent of each other. The CCD solid-state image sensor having the horizontal charge transfer path side last row of the vertical charge transfer path controlled by the drive pulse, and at the time of still image capturing, responds to the detected charge of the photoelectric conversion element in which the transparent filter is stacked. The imaging signal and the imaging signal corresponding to the detected charge of the photoelectric conversion element on which the color filter is stacked are output, and at the time of moving image capturing, the imaging signal corresponding to the detected charge of the photoelectric conversion element on which the color filter is stacked is output. And an image sensor driving means for stopping output of an image signal corresponding to the detected charge of the photoelectric conversion element on which the transparent filter is laminated.

  The image sensor driving means of the image pickup apparatus of the present invention is characterized in that it performs the same drive as during the moving image imaging during a preliminary operation for imaging a still image.

  The image sensor driving means of the image pickup apparatus according to the present invention may be configured such that the detected charge transfer packet of the photoelectric conversion element on which the transparent filter that becomes an empty packet on the horizontal charge transfer path is stacked at the time of moving image capturing is detected on the vertical charge transfer path. The smear charges are inserted and transferred, and a signal corresponding to the amount of smear charges is output.

  The image pickup apparatus of the present invention includes signal processing means for correcting an image pickup signal corresponding to a detected charge of the photoelectric conversion element on which the color filters are stacked based on a signal corresponding to the smear charge amount.

  The CCD type solid-state imaging device of the present invention includes a plurality of photoelectric conversion elements arranged in a two-dimensional array on the surface portion of a semiconductor substrate and formed by shifting even-numbered rows by 1/2 pitch with respect to odd-numbered rows, A transparent filter stacked on one of the photoelectric conversion element rows of the row and the even-numbered row, a color filter stacked on the other photoelectric conversion element row of the odd-numbered row and the even-numbered row, and each photoelectric A plurality of vertical charge transfer paths provided meandering along the conversion element array, a horizontal charge transfer path provided along a transfer direction end of each vertical charge transfer path, and a transfer pulse of the vertical charge transfer path The vertical row of the vertical charge transfer path controlled by a drive pulse independent from the horizontal charge transfer path side, and the photoelectric layer formed by laminating the transparent filter provided between the horizontal charge transfer path and the final row. Transformation element Characterized by a detection charges from the last line to and a barrier means for controlling on the basis of the transfer or transfer stop in the horizontal charge transfer path to the control signal.

  The barrier means of the CCD type solid-state imaging device of the present invention is a two-layer electrode provided in the last row.

  The barrier means of the CCD type solid-state imaging device of the present invention is characterized in that it is a horizontal transfer electrode provided in the horizontal charge transfer path at a double pitch with respect to the pitch of the vertical charge transfer path.

  ADVANTAGE OF THE INVENTION According to this invention, it becomes possible to aim at noise reduction at the time of the moving image imaging of the solid-state image sensor which has a brightness | luminance detection pixel and a color filter mounting pixel.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a configuration diagram of a digital still camera according to an embodiment of the present invention. In this embodiment, a digital still camera will be described as an example. However, the present invention can also be applied to other types of digital cameras such as a camera mounted on a small electronic device such as a digital video camera or a mobile phone.

  A digital still camera shown in FIG. 1 includes a photographing lens 10, a CCD solid-state imaging device 100, which will be described in detail later, a diaphragm and mechanical shutter 12 provided between the two, an infrared cut filter 13, and an optical low-pass filter. 14.

  The CPU 15 that controls the entire digital still camera controls the light emitting unit 16 and the light receiving unit 17 for flash, and also controls the lens driving unit 18 to adjust the position of the photographing lens 10 to the focus position, and the aperture and shutter. The aperture amount of the diaphragm is controlled via the drive unit 19 to adjust the exposure amount to an appropriate exposure amount, and the closing timing of the mechanical shutter is controlled.

  Further, the CPU 15 drives the solid-state image sensor 100 through the image sensor driving unit 20 as will be described in detail later, and outputs captured image data of the subject image captured through the photographing lens 10. A user instruction signal is input to the CPU 15 through the operation unit 21, and the CPU 15 performs various controls according to the instruction.

  The operation unit 21 includes a switch for inputting an instruction for still image shooting / moving image shooting and a shutter button. When the user inputs a still image shooting instruction and the shutter button is pressed halfway (switch S1), focus adjustment and exposure adjustment are performed. When the shutter button is fully pressed (switch S2), a still image is captured. Is called. When the user inputs a moving image shooting instruction and presses the shutter button, the moving image shooting starts and the focus adjustment and exposure adjustment are always performed on the main subject in the moving image. For example, when the shutter button is pressed again, the moving image is recorded. Shooting is stopped.

  The electric control system of the digital still camera includes an analog signal processing unit 22 connected to the output of the solid-state imaging device 100, and an A / D conversion that converts RGB color signals output from the analog signal processing unit 22 into digital signals. The circuit 23 is provided and these are controlled by the CPU 15.

  Further, the electric control system of the digital still camera includes a memory control unit 25 connected to the main memory 24, a digital signal processing unit 26, and compression / decompression for compressing a captured image into a JPEG image or expanding a compressed image. A processing unit 27, an integrating unit 28 that integrates photometric data to adjust the gain of white balance, an external memory control unit 30 to which a detachable recording medium 29 is connected, and a liquid crystal display unit mounted on the back of the camera, etc. The display control unit 32 is connected to each other by a control bus 33 and a data bus 34, and is controlled by a command from the CPU 15.

  FIG. 2 is a schematic view of the surface of the CCD solid-state imaging device 100 described above. This CCD type solid-state imaging device 100 includes a plurality of photoelectric conversion elements (pixels: photodiodes) 101 arranged in a two-dimensional array on the surface of a semiconductor substrate. Pixel rows are arrayed with a 1/2 pixel pitch shift.

  In this embodiment, any one of the three primary color filters (red = R, green = G, blue = B) is stacked on each pixel in either the odd row or the even row. In the color filter layered row, when indicated by the color of the color filter, the pixel rows that are RGRRGRG... And the pixel rows that are GBGBG. Hereinafter, a pixel mounted with a red filter is referred to as an R pixel, a pixel mounted with a green filter is referred to as a G pixel, and a pixel mounted with a blue filter is referred to as a B pixel.

  A colorless transparent filter (hereinafter also referred to as a W (white) filter, and a pixel equipped with a W filter is referred to as a W pixel) is stacked on each pixel in the other pixel row of the odd or even rows. That is, the CCD type solid-state imaging device of the present embodiment has a square lattice that is arranged in the middle of each color filter stacked pixel, in which RGB color filters are Bayer-arranged in each pixel in one of the odd-numbered or even-numbered square lattices. It has a novel pixel array structure in which W filters are stacked on each arrayed pixel.

  In this CCD type solid-state imaging device 100, a vertical charge transfer path (VCCD) 102 is provided along each pixel column, and each vertical charge transfer path 102 is meandered so as to avoid vertical pixels. The arrows shown in FIG. 2 indicate the direction and position where the detected charge is read from each pixel to the vertical charge transfer path.

  A horizontal charge transfer path (HCCD) 103 is provided along the transfer direction end of each vertical charge transfer path 102, and between the horizontal charge transfer path 103 and the transfer end of each vertical charge transfer path 102, Patent Literature A line memory 104 as described in 1 is provided. An amplifier 105 is provided at the output section of the horizontal charge transfer path 103, and the amplifier 105 outputs a voltage value signal corresponding to the amount of signal charge transferred as a captured image signal.

  In the CCD type solid-state imaging device 100 having such a configuration, a readout pulse, a vertical transfer pulse, a horizontal transfer pulse, a line memory drive pulse, etc. for instructing the timing for reading out signal charges from each pixel 101 to the vertical charge transfer path 103 are shown in FIG. 1 is output by an instruction from the CPU 15.

  Although the embodiments are described using the terms “vertical” and “horizontal”, this means “one direction” along the surface of the semiconductor substrate constituting the solid-state imaging device, “substantially perpendicular to this one direction”. Meaning “direction of”.

  Further, although described as a line memory (LM) 104, this constitutes the final row on the horizontal charge transfer path side of each vertical charge transfer path 102, and the final electrode controlled by a drive pulse having a timing different from that of the vertical transfer pulse. If it has, it will not be restricted to the line memory of patent document 1.

  FIG. 3A is an explanatory diagram of a driving method of the CCD solid-state imaging device 100 when a user takes a still image of a subject using the digital still camera shown in FIG. 1, and the horizontal charge transfer path from the line memory 104 is illustrated. It is a figure which shows a mode that a signal charge is transferred to (HCCD) 103.

  Each pixel 101 of the CCD type solid-state imaging device 100 reads the detected charge to the vertical charge transfer path 102 and transfers it in the direction of the line memory 104. For example, in FIG. 2, when the detected charge of the W pixel is first read to the vertical charge transfer path 102 and transferred in the vertical direction by two transfer electrodes, the detected charge of the R pixel, G pixel, and B pixel is transferred to the vertical charge. When read to the path 102, the color signal (color signal read from the R pixel, G pixel, and B pixel) and the W signal (luminance signal read from the W pixel) are arranged in a horizontal row.

  When transfer is performed in the vertical direction in this state, first, each signal WRWGWRWG... Of the first row RG row and the next row W on the line memory (LM) 104 side is changed to a line as shown in FIG. Temporarily stored in the memory 104.

  When a drive pulse is applied from the image sensor driving unit 20 to the line memory (LM) 104 at a predetermined timing, all the signals WRWGWRWG... On the line memory 104 are moved to the horizontal charge transfer path 103, and this signal is transferred during the horizontal transfer period. WRWGWRWG... Are transferred in the direction of the amplifier 105, and the amplifier outputs a voltage value signal corresponding to each signal charge amount to the analog signal processing unit 22.

  Next, each signal WGWBWGWB... Of the third row GB and the next row W is stored in the line memory 104, which is transferred to the horizontal charge transfer path 103 and output from the amplifier 105 in the same manner as described above. .

  By repeating the above operations, signals of each R pixel, G pixel, B pixel, and W pixel for one screen are accumulated in the main memory 24 of FIG. 1, and the digital signal processing unit 26 is based on each signal and the subject. Still image data is generated.

  In the case of a still image, captured image data is generated using the W pixel signal and the RGB pixel signal, so that a high-definition image is obtained, and the luminance signal from the W pixel has a high S / N. Therefore, a high-quality captured image can be obtained.

  FIGS. 3B and 3C are explanatory diagrams of a driving method of the CCD solid-state imaging device 100 when a user takes a moving image of a subject using the digital still camera shown in FIG.

  Even when a moving image is captured, the WRWGWRWG... Signal is transferred and stored in the line memory 104 in the vertical direction as described with reference to FIG. In the case of a still image, all the signals in one row were transferred to the horizontal charge transfer path (HCCD) 103 and transferred in the horizontal direction. However, in the case of a moving image, in the case of this embodiment, the signal charge of the W pixel is not output, but only the color signal is output.

  That is, as shown in FIG. 3B, only the RGRG... Signal is transferred from the line memory 104 to the horizontal charge transfer path 103, and transferred and output in the horizontal direction. Since the W signal is not output in this way, it is possible to prevent the output of noise (dark current, smear, etc.) mixed in the vertical charge transfer path for transferring the signal charge of the W pixel.

  Each column in which W pixels are arranged and the adjacent vertical charge transfer path are not mounted with a color filter and are laminated with a transparent layer, so that the amount of incident light is large and the smear is also large compared to the color pixel column Become. However, in the case of the present embodiment, since the W pixel column signal is not read out during moving image shooting, the image quality of the moving image is improved.

  If the W signal remains in the line memory 104 after the RGRG... Signal is output, the W signal charge continues to be accumulated in the line memory 104. Therefore, if the field from which the RGRG... Signal is read is the first field, the W signal is transferred to the horizontal charge transfer path 103 in the next second field, which is transferred in the horizontal direction and discarded. If the transfer for discarding is performed by the high-speed sweep drive of the charge transfer path normally performed in the CCD type solid-state imaging device, it can be performed in a very short time.

  When the line memory 104 becomes empty, the WGWBWGWB... Signal is transferred and accumulated in the line memory 104. Similarly, only the GBGB... Signal is output and the W signal is discarded.

  By repeating the above operations, moving image data composed of RGB signals is accumulated in the main memory 24 of FIG. 1 for each frame, and the digital signal processing unit 26 generates moving image data from the RGB signals.

  As described above, in an imaging apparatus equipped with a CCD solid-state imaging device in which W pixels and RGB pixels are mixed, the W pixel signal output is not performed at the time of moving image shooting, and only the RGB pixel signal output is performed. Noise moving image data can be obtained.

  At the time of still image shooting, both the W pixel signal and the RGB pixel signal are output as described above. However, when performing preliminary operations (focus processing, AE processing) when capturing a still image, Since the pre-operation process is performed by capturing the image signal output from the solid-state image sensor in the moving image state, it is not necessary to output the W pixel signal as in the case of moving image capturing, and only the RGB signal is used as in moving image capturing. To perform preliminary operation processing.

  FIGS. 4A and 4B are diagrams for explaining a structure for blocking the transfer of the W signal described in FIG. 3B to the horizontal charge transfer path. In the CCD type solid-state imaging device shown in FIG. 4A, the electrodes for controlling each buffer unit of the line memory 104 are the first electrode of the buffer unit for inputting the W signal, and the buffer for inputting the R signal, G signal, and B signal. The imaging device driving unit 20 applies the driving pulse φLM1 to the first electrode, and the imaging device driving unit 20 applies the driving pulse φLM2 to the second electrode. It has a structure.

  As a result, when the signal of the line memory 104 is transferred to the horizontal charge transfer path 103, the potential of the buffer unit containing the R signal, G signal, and B signal can be made higher than the potential of the buffer unit containing the W signal. Thus, it is possible to transfer the R signal, the G signal, and the B signal to the horizontal charge transfer path while preventing the transfer of the W signal to the horizontal charge transfer path.

  In the CCD type solid-state imaging device of FIG. 4B, the electrodes of each buffer section of the line memory 104 are driven with the same drive pulse φLM, but normally the transfer electrodes of the horizontal charge transfer path driven in two phases are respectively H1 to H1. The structure is divided into H4.

  If the transfer pulse applied to the horizontal transfer electrodes H1 and H2 at the locations facing the respective buffer portions of the line memory 104 into which the W signal is input is turned off (H3 and H4 are turned on), and the potential at that location is kept high. Even when φLM is applied to the line memory 104 and the potential of the line memory 104 becomes high, transfer of the W signal to the horizontal charge transfer path is blocked, and only the R signal, G signal, and B signal are below the electrodes H3 and H4. It flows into the potential well (actually under the electrode H3 because the impurity concentration of the charge transfer channel is different between the electrode H3 and the electrode H4).

  The structure that does not transfer the W signal to the horizontal charge transfer path 103 is not limited to the structure described in FIG.

  FIG. 5 is an explanatory diagram of a driving method of a CCD type solid-state imaging device according to another embodiment of the present invention. The CCD type solid-state imaging device is exactly the same as the embodiment described in FIG.

  In the CCD type solid-state imaging device shown in the figure, the position (column direction position) of the readout electrode (also used as transfer electrode) of the W pixel and the position (column direction position) of the readout electrode (also used as transfer electrode) of the R pixel, G pixel, and B pixel. ), And at the time of moving image capturing or preliminary operation such as focus processing, the signal charge of the W pixel is not read out to the vertical charge transfer path 102 as shown in FIG. Only when an image is captured, the signal charge of the W pixel is read out to the vertical charge transfer path 102. As a result, it is possible to obtain the same effect as described with reference to FIGS.

  FIG. 6 is an explanatory diagram of a driving method of a CCD type solid-state imaging device according to still another embodiment of the present invention. As described with reference to FIG. 4B, only the R signal, G signal, and B signal are transferred in the direction of the amplifier 105 through the horizontal charge transfer path 103 and output during moving image capturing or preliminary operation. At this time, for example, in the example shown in FIG. 4B, an empty packet is transferred between the R signal and the G signal.

  The embodiment shown in FIG. 6 is an explanatory diagram of a driving method for effectively using this empty packet. In this empty packet, for example, a smear charge at the hatched position in FIG. The amplifier 105 outputs a voltage value signal corresponding to the smear charge.

  Of course, at this time, the signal charge is not read from the adjacent pixel in the hatched area, only the smear charge is vertically transferred and accumulated in the line memory, and the horizontal charge transfer path is transferred by one stage, so that the empty packet position and the line memory are read. Is aligned with the smear charge position, and smear charge transfer to the horizontal charge transfer path is performed.

  Since this smear charge is considered to be close to the smear charge of the closest color pixel, a picked-up image signal from which smear has been removed can be obtained by subtracting the smear amount from the signal of this color pixel.

  Smear detection does not have to be performed on every line every time, but smear detection is performed at a rate of about once every several to tens of lines, and the image signal in the peripheral area of the smear detection position is corrected with this smear amount. Even just doing this will have a significant impact on improving the quality of the captured image.

  As described above, the smear in the W pixel column is larger than the smear amount in the color pixel column in which the color filters are stacked. Therefore, the smear in the W pixel column is detected and used as the smear component of the color pixel. It is more preferable to perform smear detection.

  Note that the smear detection position is not limited to the transfer electrode position adjacent to the color pixel, and may be an arbitrary position. For example, the smear at the transfer electrode position in the middle of two color pixels adjacent in the vertical direction is detected, and the average value of the two smear amounts in the vertical direction is set as the smear amount of the color pixel in the middle between the two smear detection positions. That's fine.

  By adopting the CCD type solid-state imaging device and the driving method thereof according to the present invention, it is possible to improve the image quality in moving image shooting and to perform the preliminary operation with high accuracy, which is useful when applied to a digital camera or the like. It is.

It is a functional block block diagram of the imaging device which concerns on one Embodiment of this invention. It is a surface schematic diagram of the CCD type solid-state imaging device shown in FIG. FIG. 3 is an explanatory diagram of a driving method of the CCD type solid-state imaging device shown in FIG. 2. It is explanatory drawing of the CCD type solid-state image sensor which implement | achieves the drive method of FIG. FIG. 6 is an explanatory diagram of a driving method of a CCD type solid-state imaging device according to another embodiment of the present invention. It is a drive method explanatory drawing of the CCD type solid-state image sensor concerning another embodiment of the present invention.

Explanation of symbols

10 Shooting lens 15 CPU
20 Image sensor drive unit 24 Main memory 26 Digital signal processing unit 100 CCD type solid-state image sensor 101 Pixel 102 Vertical charge transfer path (VCCD)
103 Horizontal charge transfer path (HCCD)
104 Line memory (LM)
105 Output amplifier

Claims (10)

  A plurality of photoelectric conversion elements arranged in a two-dimensional array on the surface of the semiconductor substrate and formed with even rows shifted by 1/2 pitch with respect to odd rows; and either one of the odd rows or even rows A transparent filter stacked on the photoelectric conversion element rows, a color filter stacked on the other photoelectric conversion element row of the odd-numbered rows and the even-numbered rows, and meandering along each photoelectric conversion device row The plurality of vertical charge transfer paths, a horizontal charge transfer path provided along the transfer direction end of each vertical charge transfer path, and a transfer pulse of the vertical charge transfer path are controlled by independent drive pulses. In a driving method of a CCD type solid-state imaging device including the horizontal charge transfer path side last row of the vertical charge transfer path, according to the detected charge of the photoelectric conversion element on which the transparent filter is stacked at the time of still image capturing An image signal and an imaging signal corresponding to the detected charge of the photoelectric conversion element stacked with the color filter are output, and an imaging signal corresponding to the detected charge of the photoelectric conversion element stacked with the color filter is output during moving image capturing. A method of driving a CCD type solid-state imaging device, wherein output of an imaging signal corresponding to a detected charge of the photoelectric conversion device on which the transparent filter is laminated is stopped.   2. The method of driving a CCD type solid-state imaging device according to claim 1, wherein the moving image capturing includes a preliminary operation for capturing a still image.   The smear charge on the vertical charge transfer path is transferred and transferred to the detection charge transfer packet of the photoelectric conversion element in which the transparent filter that becomes an empty packet on the horizontal charge transfer path is stacked at the time of moving image capturing. 3. A method for driving a CCD type solid-state imaging device according to claim 1, wherein a signal corresponding to the output is output.   A plurality of photoelectric conversion elements arranged in a two-dimensional array on the surface of the semiconductor substrate and formed with even rows shifted by 1/2 pitch with respect to odd rows; and either one of the odd rows or even rows A transparent filter stacked on the photoelectric conversion element rows, a color filter stacked on the other photoelectric conversion element row of the odd-numbered rows and the even-numbered rows, and meandering along each photoelectric conversion device row The plurality of vertical charge transfer paths, a horizontal charge transfer path provided along the transfer direction end of each vertical charge transfer path, and a transfer pulse of the vertical charge transfer path are controlled by independent drive pulses. A CCD type solid-state imaging device including the horizontal charge transfer path side last row of the vertical charge transfer path, and an imaging signal corresponding to the detected charge of the photoelectric conversion element on which the transparent filter is stacked when capturing a still image; An imaging signal corresponding to the detected charge of the photoelectric conversion element on which the filter is laminated and an imaging signal corresponding to the detection charge of the photoelectric conversion element on which the color filter is laminated when moving images are picked up, and the transparent filter is laminated An image pickup apparatus comprising: an image pickup element driving unit that stops output of an image pickup signal corresponding to a detected charge of the photoelectric conversion element.   The imaging apparatus according to claim 4, wherein the imaging element driving unit performs the same driving as in the moving image imaging during a preliminary operation for imaging a still image.   The image sensor driving means puts smear charges on the vertical charge transfer path into the detection charge transfer packet of the photoelectric conversion element in which the transparent filter that becomes an empty packet on the horizontal charge transfer path at the time of moving image capturing is stacked. 6. The image pickup apparatus according to claim 4, wherein the image pickup apparatus transfers the signal and outputs a signal corresponding to the smear charge amount.   The imaging apparatus according to claim 6, further comprising: a signal processing unit that corrects an imaging signal corresponding to a detected charge of the photoelectric conversion element on which the color filters are stacked based on a signal corresponding to the smear charge amount. .   A plurality of photoelectric conversion elements arranged in a two-dimensional array on the surface of the semiconductor substrate and formed with even rows shifted by 1/2 pitch with respect to odd rows; and either one of the odd rows or even rows A transparent filter stacked on the photoelectric conversion element rows, a color filter stacked on the other photoelectric conversion element row of the odd-numbered row and the even-numbered row, and a meandering along each photoelectric conversion device column The plurality of vertical charge transfer paths, a horizontal charge transfer path provided along the transfer direction end of each vertical charge transfer path, and a transfer pulse of the vertical charge transfer path are controlled by independent drive pulses. The detection charge of the photoelectric conversion element, which is provided between the horizontal charge transfer path and the final row of the vertical charge transfer path, and between the horizontal charge transfer path and the final row is stacked on the photoelectric conversion element. Said CCD type solid state imaging device characterized by comprising a barrier means for controlling on the basis of a control signal to stop the transfer or transfer to a flat charge transfer path.   9. The CCD solid-state image pickup device according to claim 8, wherein the barrier means is a two-layer electrode provided in the last row.   9. The CCD solid-state image pickup device according to claim 8, wherein the barrier means is a horizontal transfer electrode provided in the horizontal charge transfer path at a double pitch with respect to the pitch of the vertical charge transfer path.

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