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JP2008263083A - Planar light source, and liquid crystal display device - Google Patents

Planar light source, and liquid crystal display device Download PDF

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Publication number
JP2008263083A
JP2008263083A JP2007105140A JP2007105140A JP2008263083A JP 2008263083 A JP2008263083 A JP 2008263083A JP 2007105140 A JP2007105140 A JP 2007105140A JP 2007105140 A JP2007105140 A JP 2007105140A JP 2008263083 A JP2008263083 A JP 2008263083A
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Prior art keywords
light
light source
liquid crystal
circuit wiring
crystal display
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JP2007105140A
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Japanese (ja)
Inventor
Hiroyuki Yamada
寛之 山田
Naoki Tsukamoto
尚樹 塚本
Tadamoto Takezawa
匡基 竹澤
Katsuhiro Suhara
克洋 須原
Keiyo Okada
啓誉 岡田
Yasuhiro Sakakibara
泰博 榊原
Takahiko Sato
貴彦 佐藤
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Priority to JP2007105140A priority Critical patent/JP2008263083A/en
Publication of JP2008263083A publication Critical patent/JP2008263083A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

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  • Liquid Crystal (AREA)
  • Planar Illumination Modules (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin planar light source which can be used as a backlight of a liquid crystal display device. <P>SOLUTION: A segment U1 comprises: a circuit wiring board 10 composed of a substrate part 10a into which phosphors of three primary colors are dispersed and a circuit interconnection part 10c; a group III nitride compound semiconductor light-emitting element 201 for emitting ultraviolet rays; a bump 3b; sealing resin 4 into which the phosphors of the three primary colors are dispersed; and a reflection film 5 composed of a highly reflective metal. In the segment U1, ultraviolet light emitted from a light-emitting area (thick line) of the group III nitride compound semiconductor light-emitting element 201 is converted into red, green and blue lights by the phosphors of the three primary colors which are dispersed into the substrate part 10a of the circuit board substrate 10 and the sealing resin 4. Since red, green and blue lights are respectively radiated from the phosphors of the three primary colors as if they were secondary light-emitting sources, lights of the three primary colors are emitted from the whole segment U1 upwards in the shown figure. The segment U1 is an extremely thin white planar light source which can be used as a backlight of a color liquid crystal display device. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は面光源及び液晶表示装置に関する。本発明は数個乃至極めて多数の発光ダイオードを用いた薄型の面光源に関し、また、それをバックライトとして用いる液晶表示装置に関する。   The present invention relates to a surface light source and a liquid crystal display device. The present invention relates to a thin surface light source using several to very many light emitting diodes, and also relates to a liquid crystal display device using it as a backlight.

液晶を表示装置として用いる場合、当該液晶により透過又は遮断される光を発する光源、いわゆるバックライトが必要である。近年、カラー液晶がコンピュータのモニターに留まらず、携帯電話の操作画面やテレビ画面に積極的に採用され、必要とされるバックライトの光量も大きいものとなってきた。   When a liquid crystal is used as a display device, a light source that emits light that is transmitted or blocked by the liquid crystal, that is, a so-called backlight is necessary. In recent years, color liquid crystals have been used not only for computer monitors but also for mobile phone operation screens and television screens, and the amount of backlight light required has become large.

ノートパソコンのモニター画面や携帯電話の操作画面に液晶表示装置を採用する場合、光源を含めて、表示面に垂直な方向の厚さを薄くすることが求められる。こうした中、例えば特許文献1のように、光源を液晶表示領域の言わば外部に配置させ、光をまず導光板で液晶背面に導き、反射膜及び拡散板で液晶背面から正面方向へ光を導く構造が普及している。
特開2002−72242号公報
When a liquid crystal display device is used for a monitor screen of a notebook computer or an operation screen of a mobile phone, it is required to reduce the thickness in the direction perpendicular to the display surface including the light source. Under such circumstances, as in Patent Document 1, for example, a light source is arranged outside the liquid crystal display region, and light is first guided to the back of the liquid crystal by a light guide plate, and light is guided from the back of the liquid crystal to the front by a reflective film and a diffusion plate Is popular.
JP 2002-72242 A

従来技術では、光源からの光は一旦液晶表示面と平行に液晶背面に導かれているので、光源の発する光の使用効率は決して高くない。また、単に光源を液晶背面に配置するのみでは、液晶全体に均一に光を照射するためには、例えば光源と液晶背面との距離を大きくする必要がある。特に、小型化を狙って、個々が赤、緑、青色の発光ダイオード(LED)をマトリックス配置した場合には、3原色LEDマトリックスと液晶背面に光拡散板を配置する場合であっても3原色LEDマトリックスと液晶背面との間隔を極めて大きくする必要があった。   In the prior art, since the light from the light source is once guided to the back of the liquid crystal in parallel with the liquid crystal display surface, the use efficiency of the light emitted from the light source is never high. Further, simply disposing the light source on the back surface of the liquid crystal requires, for example, increasing the distance between the light source and the back surface of the liquid crystal in order to uniformly irradiate the entire liquid crystal. In particular, for the purpose of miniaturization, when individual red, green, and blue light emitting diodes (LEDs) are arranged in a matrix, the three primary colors are used even when the three primary color LED matrix and the light diffusion plate are arranged on the back of the liquid crystal. The distance between the LED matrix and the liquid crystal back surface has to be extremely large.

本発明は上記課題を解決するために成されたものであり、その目的は液晶表示装置のバックライトとして使用可能な、薄い、面光源を提供することである。   The present invention has been made to solve the above problems, and an object thereof is to provide a thin surface light source that can be used as a backlight of a liquid crystal display device.

請求項1に係る発明は、蛍光体又は光拡散材料が分散された回路配線基板と、回路配線基板の光取り出し側である第1の面とは異なる第2の面上に配置され、回路配線に接続された発光ダイオードと、発光ダイオードを封止する、蛍光体又は光拡散材料が分散された封止樹脂と、封止樹脂を覆い、発光ダイオードからの光を回路配線基板側に反射する反射膜とを有することを特徴とする面光源である。
請求項2に係る発明は、請求項1に記載の面光源を有し、回路配線基板の第1の面と平行な表示面を有することを特徴とする液晶表示装置である。
The invention according to claim 1 is arranged on a circuit wiring board in which a phosphor or a light diffusing material is dispersed and a second surface different from the first surface on the light extraction side of the circuit wiring board. A light-emitting diode connected to the light-emitting diode, a sealing resin in which a phosphor or a light diffusion material is dispersed, which seals the light-emitting diode, and a reflection that covers the sealing resin and reflects light from the light-emitting diode to the circuit wiring board side A surface light source characterized by having a film.
According to a second aspect of the present invention, there is provided a liquid crystal display device comprising the surface light source according to the first aspect and having a display surface parallel to the first surface of the circuit wiring board.

本願の各請求項に係る発明において、回路配線基板は、遮光性ではないことを必要とするが、蛍光体又は光拡散材料が分散された場合は必ずしも光に対して高透過性である必要は無い。更には、いずれの請求項に係る発明においても、視覚的効果を狙って、いわゆるスモーク状となったものや、着色されたものなど、任意の透光性(光の波長に対する透過率)を有するものとして良い。回路配線基板に形成する回路配線は、例えば透明材料を用いても良いが、不透明材料の金属膜としても構わない。発光ダイオードの構成と回路配線基板の回路配線との接続方法は任意である。封止樹脂も必ずしも光に対して高透過性である必要は無い。蛍光体とは例えば発光ダイオードの発光波長を変換するものを言い、発光ダイオード自身の発光波長の光と、蛍光体による変換された発光波長の光が合わさって、他の色調に視認できるものを想定するものである。光拡散材料は、発光ダイオードから直線方向にのみ光を取り出すのではなく、光透過領域全体が、いずれの方向からも発光しているように視認できるようにするものである。   In the invention according to each claim of the present application, the circuit wiring board needs not to be light-shielding, but when the phosphor or the light diffusing material is dispersed, it is not necessarily required to be highly transmissive to light. No. Furthermore, in any of the claimed inventions, the film has an arbitrary translucency (transmittance with respect to the wavelength of light) such as a so-called smoked or colored one for visual effect. Good as a thing. For example, a transparent material may be used as the circuit wiring formed on the circuit wiring board, but a metal film made of an opaque material may be used. A method of connecting the configuration of the light emitting diode and the circuit wiring of the circuit wiring board is arbitrary. The sealing resin is not necessarily required to be highly permeable to light. For example, a phosphor is a substance that converts the light emission wavelength of a light emitting diode. It is assumed that the light of the light emission wavelength of the light emitting diode itself and the light of the light emission wavelength converted by the phosphor are combined and can be visually recognized in other colors. To do. The light diffusing material does not extract light from the light emitting diode only in the linear direction, but allows the entire light transmission region to be visually recognized as emitting light from any direction.

本発明によれば、回路配線基板の第1の面側に設けられた、発光ダイオードから発せられた光が、封止樹脂と回路配線基板に分散された、蛍光体又は光拡散材料により光の方向が不規則に変化する。また、回路配線基板から遠ざかる方向の光は反射膜により回路配線基板へと反射される。これにより、回路配線基板の第2の面側からは、発光ダイオードを中心とした極めて広い領域が、あたかも発光しているように視認される。即ち、実質的には点光源である発光ダイオードを用いて面光源が構成できる。発光ダイオードを多数個用いれば、所望の面積の面光源とすることができる。これにより、液晶表示装置のバックライトとして採用可能な、極めて薄い面光源が構成できる。即ち、バックライトを有する液晶表示装置のユニット全体の占有体積を小さくすることができる。また、反射膜を用いており、光の使用効率が高い。   According to the present invention, the light emitted from the light emitting diode provided on the first surface side of the circuit wiring board is transmitted by the phosphor or the light diffusing material dispersed in the sealing resin and the circuit wiring board. The direction changes irregularly. Further, light in a direction away from the circuit wiring board is reflected to the circuit wiring board by the reflection film. Thereby, from the 2nd surface side of a circuit wiring board, the very wide area | region centering on a light emitting diode is visually recognized as if it emitted light. That is, a surface light source can be configured using a light emitting diode that is substantially a point light source. If a large number of light emitting diodes are used, a surface light source having a desired area can be obtained. Thereby, an extremely thin surface light source that can be employed as a backlight of a liquid crystal display device can be configured. That is, the occupied volume of the entire unit of the liquid crystal display device having the backlight can be reduced. In addition, a reflective film is used, and the light use efficiency is high.

また、発光ダイオードの色調として3原色の3個のチップを一体化又は密着して設けると、回路配線基板の第2の面側に白色光を放射できる。或いは、例えば紫外線領域の発光ダイオードと、3原色の蛍光体を分散させた封止樹脂と回路配線基板を用いれば、1種類の発光ダイオードにより回路配線基板の第2の面側に白色光を放射できる。この場合、励起光源である近紫外線発光ダイオードを面光源の導光体中に配置することになるので光の使用効率が高くなる。これにより、カラー液晶表示装置のバックライトとして採用可能な、極めて薄い白色面光源が構成できる。即ち、バックライトを有するカラー液晶表示装置のユニット全体の占有体積を小さくすることができる。また、反射膜を用いており、光の使用効率が高い。   Further, when three chips of the three primary colors are provided as a color tone of the light emitting diode, they are radiated to the second surface side of the circuit wiring board. Alternatively, for example, if a light emitting diode in the ultraviolet region, a sealing resin in which phosphors of three primary colors are dispersed, and a circuit wiring board are used, white light is emitted to the second surface side of the circuit wiring board by one type of light emitting diode. it can. In this case, the near-ultraviolet light-emitting diode that is the excitation light source is disposed in the light guide of the surface light source, so that the light use efficiency is increased. Thereby, an extremely thin white surface light source that can be employed as a backlight of a color liquid crystal display device can be configured. That is, the occupied volume of the entire unit of the color liquid crystal display device having the backlight can be reduced. In addition, a reflective film is used, and the light use efficiency is high.

本発明に用いる発光ダイオードは、単色、フルカラー、その他任意である。また、用いる発光ダイオードの個数も任意である。発光ダイオードとしては、必要な色調を発光するものを任意に選択できる。例えばIII族窒化物系化合物半導体(AlxGayIn1-x-yN)を用いた紫色乃至緑色の発光ダイオードを選択しても良い。蛍光体と組み合わせる場合は、近紫外乃至青色領域の発光波長の発光ダイオードと黄色蛍光体を組み合わせて白色ダイオードとしても良く、所望色の蛍光体と紫外線発光ダイオードを組み合わせても良い。 The light-emitting diode used in the present invention is monochromatic, full-color, or other arbitrary. Further, the number of light emitting diodes used is also arbitrary. As the light emitting diode, a light emitting diode which emits light having a necessary color tone can be arbitrarily selected. For example, a purple or green light emitting diode using a group III nitride compound semiconductor (Al x Ga y In 1-xy N) may be selected. When combined with a phosphor, a light emitting diode having an emission wavelength in the near ultraviolet to blue region and a yellow phosphor may be combined to form a white diode, or a phosphor of a desired color and an ultraviolet light emitting diode may be combined.

発光ダイオードの電極構造も任意であり、回路配線基板の回路配線との接続方法も任意に選択できる。例えばIII族窒化物系化合物半導体(AlxGayIn1-x-yN)発光素子を用いる場合、いわゆるフェイスアップタイプの構造(p型半導体層側に光取り出し)でチップ基板裏面に反射膜を形成しても良い。この場合、回路配線基板との接続ははんだバンプとして良い。或いはいわゆるフリップチップタイプの構造(絶縁基板側に光取り出し)でp型半導体層側に反射膜を有するものを、ワイヤボンディングしても良い。ワイヤボンディングの際、超音波を用いるウエッジボンディングによれば加熱処理が不要であり、他の構成部分に悪影響が少なくなる。これらの詳細については後述する。 The electrode structure of the light emitting diode is also arbitrary, and the connection method with the circuit wiring of the circuit wiring board can be arbitrarily selected. For example, when using a group III nitride compound semiconductor (Al x Ga y In 1-xy N) light emitting element, a reflective film is formed on the back surface of the chip substrate with a so-called face-up type structure (light extraction on the p-type semiconductor layer side). You may do it. In this case, the connection to the circuit wiring board may be a solder bump. Alternatively, a so-called flip chip type structure (light extraction on the insulating substrate side) having a reflective film on the p-type semiconductor layer side may be wire-bonded. When performing wire bonding, wedge bonding using ultrasonic waves eliminates the need for heat treatment and reduces the adverse effects on other components. Details of these will be described later.

回路配線基板の材料は、遮光性の母材が不適当であるほかは全く任意である。母材は透光性を有する樹脂又は無機材料が好ましい。光透過領域に対応する部分の配線材を酸化インジウムスズ(ITO)とすると、表示の際に配線の陰が生じない。光拡散材料としては球形その他の微粒子が入手可能であり、回路配線基板の母材に分散するほか、当該光拡散材料を塗布固定した薄膜を用いても良い。蛍光体や有機染料を用いる場合も同様である。   The material of the circuit wiring board is completely arbitrary except that a light-shielding base material is inappropriate. The base material is preferably a light-transmitting resin or inorganic material. When the wiring material corresponding to the light transmission region is made of indium tin oxide (ITO), the shadow of the wiring does not occur during display. As the light diffusing material, spherical or other fine particles are available, and in addition to being dispersed in the base material of the circuit wiring board, a thin film coated and fixed with the light diffusing material may be used. The same applies to the case of using a phosphor or an organic dye.

封止樹脂は母材樹脂、その他添加剤とも全く任意であり、光拡散材料、蛍光体、有機染料その他を含有させる場合も任意に選択できる。尚、本発明においては、封止樹脂を無機材料に置き換えることを排除するものではない。   The sealing resin is completely arbitrary with respect to the base material resin and other additives, and can be arbitrarily selected when a light diffusing material, a phosphor, an organic dye or the like is contained. In the present invention, replacing the sealing resin with an inorganic material is not excluded.

発光ダイオードを覆う様に形成する反射膜については、任意の金属その他を用いることが可能である。但し金属を用いる場合は、回路配線基板の回路配線との絶縁を保つため、回路配線を絶縁材で被膜する、或いはスペーサを配する等の工夫が必要である。   An arbitrary metal or the like can be used for the reflective film formed so as to cover the light emitting diode. However, when using metal, in order to maintain insulation from the circuit wiring of the circuit wiring board, it is necessary to devise measures such as coating the circuit wiring with an insulating material or arranging a spacer.

図1は、本発明の具体的な第1の実施例に係る面光源の、1個の発光ダイオード201の付近セグメントU1の構成を示す断面図である。面光源の全体像は図1のセグメントU1を縦横に任意個配置したものとなる。   FIG. 1 is a cross-sectional view showing a configuration of a vicinity segment U1 of one light emitting diode 201 of a surface light source according to a specific first embodiment of the present invention. An overall image of the surface light source is obtained by arranging arbitrary number of segments U1 in FIG. 1 vertically and horizontally.

図1のセグメントU1は、3原色の蛍光体が分散された基板部10aと回路配線10cとから成る回路配線基板10、波長370nm程度にピークを有する紫外線を発するIII族窒化物系化合物半導体発光素子201、バンプ3b、3原色の蛍光体が分散された封止樹脂4、高反射性金属であるアルミニウムから成る反射膜5から成る。III族窒化物系化合物半導体発光素子201は、絶縁性基板20と、n型III族窒化物系化合物半導体領域21nと、p型III族窒化物系化合物半導体領域22pとをこの順に有する。図1では発光領域をn型III族窒化物系化合物半導体領域21nと、p型III族窒化物系化合物半導体領域22pとに挟まれた太線Aで示した。当該領域Aは、pn界面の他、単層、単一量子井戸構造、多重量子井戸構造の発光層としうるものであって、簡略に示したものである。図1のセグメントU1は、III族窒化物系化合物半導体発光素子201を、フリップチップのように回路配線10cに接続している。p型III族窒化物系化合物半導体領域22pは図示しないp電極を介して回路配線10cと接続され、n型III族窒化物系化合物半導体領域21nは図示しないn電極と、バンプ3bを介して回路配線10cと接続されている。尚、図示しないp電極は透光性の薄膜電極であるものとする。また、図1では回路配線10cが基板部10aの図1内下側でIII族窒化物系化合物半導体発光素子201が配置されていない大部分の面積を覆うかのように記載したが、回路配線10cは、III族窒化物系化合物半導体発光素子201に通電可能なように形成されれば良く、基板部10aの下側を覆う必要は無い。また、回路配線10cは、ITOその他の透明電極であるものとする。   A segment U1 in FIG. 1 is a circuit wiring board 10 composed of a substrate portion 10a in which phosphors of three primary colors are dispersed and a circuit wiring 10c, and a group III nitride compound semiconductor light emitting device emitting ultraviolet light having a peak at a wavelength of about 370 nm. 201, a bump 3b, a sealing resin 4 in which phosphors of primary colors are dispersed, and a reflective film 5 made of aluminum which is a highly reflective metal. The group III nitride compound semiconductor light emitting device 201 includes an insulating substrate 20, an n-type group III nitride compound semiconductor region 21n, and a p-type group III nitride compound semiconductor region 22p in this order. In FIG. 1, the light emitting region is indicated by a thick line A sandwiched between an n-type group III nitride compound semiconductor region 21n and a p-type group III nitride compound semiconductor region 22p. The region A can be a light emitting layer having a single layer, a single quantum well structure, or a multiple quantum well structure in addition to the pn interface, and is simply illustrated. A segment U1 in FIG. 1 connects the group III nitride compound semiconductor light emitting device 201 to the circuit wiring 10c like a flip chip. The p-type group III nitride compound semiconductor region 22p is connected to the circuit wiring 10c via a p electrode (not shown), and the n-type group III nitride compound semiconductor region 21n is a circuit via an n electrode (not shown) and bumps 3b. It is connected to the wiring 10c. Note that a p-electrode (not shown) is a translucent thin film electrode. In FIG. 1, the circuit wiring 10 c is described as if it covers most of the area where the group III nitride compound semiconductor light emitting element 201 is not disposed on the lower side of the substrate portion 10 a in FIG. 1. 10c may be formed so as to be able to energize the group III nitride compound semiconductor light emitting device 201, and does not need to cover the lower side of the substrate portion 10a. The circuit wiring 10c is assumed to be ITO or other transparent electrode.

図1のセグメントU1においては、III族窒化物系化合物半導体発光素子201の発光領域(太線)Aから発せられた紫外光が、回路配線基板10の基板部10aに直接達した場合は、基板部10aに分散された3原色の蛍光体により、赤、緑、青色の波長に変換され、且つ当該3原色の蛍光体各々が二次的な発光源であるかのように、赤、緑、青色の光が放射される。同様に、III族窒化物系化合物半導体発光素子201の発光領域(太線)Aから発せられた紫外光が、反射膜5で反射されて、又は直接封止樹脂4に至ると、封止樹脂4に分散された3原色の蛍光体により、赤、緑、青色の波長に変換され、且つ当該3原色の蛍光体各々が二次的な発光源であるかのように、赤、緑、青色の光が放射される。こうして、回路配線基板10の基板部10aと封止樹脂4に分散された3原色の蛍光体から、各々が二次的な発光源であるかのように赤、緑、青色の光が放射されることで、図1内上方向に、図1のセグメントU1全体から3原色の光が発せられる。これを図1で太線の矢印で示した。即ち図1のセグメントU1は、実質的には点光源である半導体発光素子201を用いた、面光源であり、図1のセグメントU1を縦横に繰り返し配置した面光源は、極めて広い面積を有する3原色による白色面光源となる。これは、カラー液晶表示装置のバックライトとして用いることのできる、極めて薄い白色面光源である。   In the segment U1 of FIG. 1, when the ultraviolet light emitted from the light emitting region (thick line) A of the group III nitride compound semiconductor light emitting device 201 directly reaches the substrate portion 10a of the circuit wiring substrate 10, the substrate portion The three primary color phosphors dispersed in 10a are converted into red, green, and blue wavelengths, and each of the three primary color phosphors is a secondary light source. Of light is emitted. Similarly, when ultraviolet light emitted from the light emitting region (thick line) A of the group III nitride compound semiconductor light emitting device 201 is reflected by the reflective film 5 or directly reaches the sealing resin 4, the sealing resin 4. Are converted into red, green, and blue wavelengths by the three primary color phosphors dispersed in the red, green, and blue colors as if each of the three primary color phosphors was a secondary light source. Light is emitted. In this way, red, green, and blue light are emitted from the three primary color phosphors dispersed in the circuit board 10a and the sealing resin 4 as if they were secondary light sources. Thus, light of the three primary colors is emitted from the entire segment U1 in FIG. 1 in the upward direction in FIG. This is indicated by a thick arrow in FIG. That is, the segment U1 in FIG. 1 is a surface light source that uses the semiconductor light emitting element 201 that is substantially a point light source, and the surface light source in which the segments U1 in FIG. It becomes a white surface light source with primary colors. This is an extremely thin white surface light source that can be used as a backlight of a color liquid crystal display device.

〔変形例1〕
図1のセグメントU1のIII族窒化物系化合物半導体発光素子201を、紫外線発光ではなく他の波長領域の発光素子に置き替え、回路配線基板10の基板部10aと封止樹脂4に分散された3原色の蛍光体を光拡散材料に置き換えると、当該波長領域の面光源が構成できる。この場合、蛍光体による波長変換に伴う発熱等を抑え、光の利用効率を向上させることができる。
[Modification 1]
The group III nitride compound semiconductor light emitting device 201 of the segment U1 in FIG. 1 is replaced with a light emitting device in another wavelength region instead of ultraviolet light emission, and dispersed in the substrate portion 10a of the circuit wiring board 10 and the sealing resin 4. When the phosphors of the three primary colors are replaced with a light diffusing material, a surface light source in the wavelength region can be configured. In this case, heat generation associated with wavelength conversion by the phosphor can be suppressed, and light utilization efficiency can be improved.

図2は、本発明の具体的な第2の実施例に係る面光源の、1個の発光ダイオード202の付近セグメントU2の構成を示す断面図である。面光源の全体像は図2のセグメントU2を縦横に任意個配置したものとなる。   FIG. 2 is a cross-sectional view showing the configuration of the vicinity segment U2 of one light-emitting diode 202 of a surface light source according to a specific second embodiment of the present invention. The entire image of the surface light source is obtained by arranging arbitrary number of segments U2 in FIG. 2 vertically and horizontally.

図2のセグメントU2は、図1のセグメントU1が発光素子201をフリップチップ様に回路配線10cに接続していた部分を、発光素子202を回路配線10cにワイヤボンディング3n及び3pで接続したことを除く他は同様の構成である。即ち、図2のセグメントU2に用いるIII族窒化物系化合物半導体発光素子202は、基本的には図1のIII族窒化物系化合物半導体発光素子201と同様に、絶縁性基板20と、n型III族窒化物系化合物半導体領域21nと、p型III族窒化物系化合物半導体領域22pとをこの順に有し、n型III族窒化物系化合物半導体領域21nと、p型III族窒化物系化合物半導体領域22pとに挟まれた発光領域(太線)Aを有する。発光領域(太線)Aからは紫外線が発せられる。n型III族窒化物系化合物半導体領域21nとワイヤボンディング3nとの間にはn電極が、p型III族窒化物系化合物半導体領域22pとワイヤボンディング3pとの間にはp電極が形成されているものとする。また、少なくとも、図示しないp電極は透光性の薄膜電極であるものとする。   The segment U2 in FIG. 2 shows that the segment U1 in FIG. 1 connected the light emitting element 201 to the circuit wiring 10c in a flip-chip manner, and the light emitting element 202 connected to the circuit wiring 10c by wire bonding 3n and 3p. Other than that, the configuration is the same. That is, the group III nitride compound semiconductor light emitting device 202 used for the segment U2 in FIG. 2 is basically the same as the group III nitride compound semiconductor light emitting device 201 in FIG. It has a group III nitride compound semiconductor region 21n and a p-type group III nitride compound semiconductor region 22p in this order, and includes an n-type group III nitride compound semiconductor region 21n and a p-type group III nitride compound. A light emitting region (thick line) A is sandwiched between the semiconductor regions 22p. Ultraviolet rays are emitted from the light emitting region (thick line) A. An n-electrode is formed between the n-type group III nitride compound semiconductor region 21n and the wire bonding 3n, and a p-electrode is formed between the p-type group III nitride compound semiconductor region 22p and the wire bonding 3p. It shall be. In addition, at least a p-electrode (not shown) is a light-transmitting thin film electrode.

図2のセグメントU2も、図1のセグメントU1と同様に、実質的には点光源である半導体発光素子202を用いた、面光源であり、図2のセグメントU2を縦横に繰り返し配置した面光源は、極めて広い面積を有する3原色による白色面光源となる。これは、カラー液晶表示装置のバックライトとして用いることのできる、極めて薄い白色面光源である。   Similarly to the segment U1 in FIG. 1, the segment U2 in FIG. 2 is a surface light source that uses the semiconductor light emitting element 202 that is substantially a point light source, and is a surface light source in which the segments U2 in FIG. Becomes a white surface light source with three primary colors having an extremely large area. This is an extremely thin white surface light source that can be used as a backlight of a color liquid crystal display device.

〔変形例2〕
図2のセグメントU2のIII族窒化物系化合物半導体発光素子202を、紫外線発光ではなく他の波長領域の発光素子に置き替え、回路配線基板10の基板部10aと封止樹脂4に分散された3原色の蛍光体を光拡散材料に置き換えると、当該波長領域の面光源が構成できる。この場合、蛍光体による波長変換に伴う発熱等を抑え、光の利用効率を向上させることができる。
[Modification 2]
The group III nitride compound semiconductor light emitting element 202 in the segment U2 in FIG. 2 is replaced with a light emitting element in another wavelength region instead of ultraviolet light emission, and dispersed in the substrate portion 10a of the circuit wiring board 10 and the sealing resin 4. When the phosphors of the three primary colors are replaced with a light diffusing material, a surface light source in the wavelength region can be configured. In this case, heat generation associated with wavelength conversion by the phosphor can be suppressed, and light utilization efficiency can be improved.

図1のセグメントU1において、基板20の裏面(図内下側)に高反射性の金属膜を形成する構成としても良い。図2のセグメントU2において、図示しないp電極は透光性の薄膜電極であるものとしたが、高反射性の金属電極としても良い。   In the segment U1 in FIG. 1, a highly reflective metal film may be formed on the back surface (lower side in the figure) of the substrate 20. In the segment U2 in FIG. 2, the p electrode (not shown) is a light-transmitting thin film electrode, but may be a highly reflective metal electrode.

図3は本発明の具体的な第3の実施例に係るフルカラー液晶表示装置100の構成を示す断面図である。図3のフルカラー液晶表示装置100は、フルカラー液晶装置本体部60と、3原色混合の白色面光源Uとから成る。   FIG. 3 is a cross-sectional view showing the configuration of a full-color liquid crystal display device 100 according to a specific third embodiment of the present invention. The full-color liquid crystal display device 100 of FIG. 3 includes a full-color liquid crystal device main body 60 and a white surface light source U that is a mixture of three primary colors.

白色面光源Uは、上記実施例1で示したセグメントU1又は実施例2で示したセグメントU2を縦横に多数形成したものである。図においては、白色面光源Uを、3原色蛍光体を分散させた回路配線基板10、III族窒化物系化合物半導体発光素子201又は202、3原色蛍光体を分散させた封止樹脂4、反射膜5のみとして簡略に示した。   The white surface light source U is obtained by forming a large number of segments U1 shown in Example 1 or segments U2 shown in Example 2 vertically and horizontally. In the figure, a white surface light source U is a circuit wiring board 10 in which three primary color phosphors are dispersed, a group III nitride compound semiconductor light emitting element 201 or 202, a sealing resin 4 in which three primary color phosphors are dispersed, and a reflection. Only the film 5 is shown in a simplified manner.

フルカラー液晶装置本体部60は、下記の、公知の積層構造を有する。即ち、白色面光源Uに近い方から、第1の偏光板61a、第1のガラス基板62a、駆動電極層63a、第1の偏光板64a、液晶(LC)65、第2の偏光板64b、共通電極63b、平坦化層66、3色カラーフィルタ層67、第2のガラス基板62b、及び、第2の偏光板61bである。第2の偏光板61bの表面60Sが即ちフルカラー液晶表示装置100の表示面である。   The full-color liquid crystal device main body 60 has the following known laminated structure. That is, from the side closer to the white surface light source U, the first polarizing plate 61a, the first glass substrate 62a, the drive electrode layer 63a, the first polarizing plate 64a, the liquid crystal (LC) 65, the second polarizing plate 64b, The common electrode 63b, the planarizing layer 66, the three-color filter layer 67, the second glass substrate 62b, and the second polarizing plate 61b. The surface 60S of the second polarizing plate 61b is the display surface of the full-color liquid crystal display device 100.

図3のフルカラー液晶表示装置100は、3原色混合の白色面光源Uにより、第1の偏光板61aに均一な面状の光が供給される。3原色混合の白色面光源Uは極めて薄い面光源であるので、図3のフルカラー液晶表示装置100全体としても極めて薄いフルカラー液晶表示装置100とすることができる。   In the full-color liquid crystal display device 100 of FIG. 3, uniform planar light is supplied to the first polarizing plate 61a by the white surface light source U of the three primary colors. Since the three primary color mixed white surface light source U is a very thin surface light source, the entire full color liquid crystal display device 100 of FIG.

〔変形例3〕
図3においては3色カラーフィルタ層67を有するフルカラー液晶本体部60と3原色混合の白色面光源Uとの組み合わせとしたが、フルカラー液晶表示装置でなければ、面光源として他の色を用いても良い。例えば青色光と黄色蛍光体による黄色光の混合による本発明の白色面光源を用いれば、モノクロ液晶表示装置を構成することは容易である。或いは他の色の面光源を用いて、モノクロ液晶表示装置を構成しても良い。
[Modification 3]
In FIG. 3, the full-color liquid crystal main body 60 having the three-color color filter layer 67 and the three-primary color mixed white surface light source U are combined. However, if it is not a full-color liquid crystal display device, other colors are used as surface light sources. Also good. For example, when the white surface light source of the present invention, which is a mixture of blue light and yellow light by a yellow phosphor, is used, it is easy to construct a monochrome liquid crystal display device. Or you may comprise a monochrome liquid crystal display device using the surface light source of another color.

以上の実施例に本願発明は限定されるものではない。実施例に挙げた構成を基礎として、入手可能な任意の部材等を用いて適宜変更可能である。例えば、発光素子はIII族窒化物系化合物半導体発光素子に限定されるものではなく、赤乃至黄緑色のGaAs系、InP系の発光素子を用いても良い。導電性のチップ基板を用いた素子を回路配線と接続する場合は当該基板を直接回路配線と接続しても良い。本願発明は、回路配線や発光素子及びそれらを導通させるワイヤやはんだ、バンプ等については必ずしも透光性のものを用いなければならないわけではない。光拡散材料と蛍光体を併用することは当然本願発明に包含される。   The present invention is not limited to the above embodiments. On the basis of the configuration described in the embodiment, it can be appropriately changed using any available member. For example, the light-emitting element is not limited to a group III nitride compound semiconductor light-emitting element, and red to yellow-green GaAs-based or InP-based light-emitting elements may be used. When an element using a conductive chip substrate is connected to circuit wiring, the substrate may be directly connected to circuit wiring. In the present invention, light-transmitting elements are not necessarily used for circuit wiring, light-emitting elements, wires, solders, bumps and the like for conducting them. Naturally, the combined use of the light diffusing material and the phosphor is included in the present invention.

尚、発光素子の回路配線基板への固定方法は任意である。絶縁性基板を有するものについては図では説明を省略したが、接着剤を用いても良い。   In addition, the fixing method to the circuit wiring board of a light emitting element is arbitrary. The description of the substrate having an insulating substrate is omitted in the figure, but an adhesive may be used.

本発明の具体的な第1の実施例に係る面光源のセグメントU1の要部を示す断面図。Sectional drawing which shows the principal part of the segment U1 of the surface light source which concerns on the specific 1st Example of this invention. 本発明の具体的な第2の実施例に係る面光源のセグメントU2の要部を示す断面図。Sectional drawing which shows the principal part of the segment U2 of the surface light source which concerns on the specific 2nd Example of this invention. 本発明の具体的な第3の実施例に係る液晶表示装置100の構成を示す断面図。Sectional drawing which shows the structure of the liquid crystal display device 100 which concerns on the specific 3rd Example of this invention.

符号の説明Explanation of symbols

10:回路配線基板
10a:3原色蛍光体が分散された基板部
10c:回路配線
201、202:III族窒化物系化合物半導体発光素子
4:3原色蛍光体が分散された封止樹脂
5:高反射性金属から成る反射膜
A:III族窒化物系化合物半導体発光素子201、202の発光領域
DESCRIPTION OF SYMBOLS 10: Circuit wiring board 10a: The board | substrate part in which 3 primary color fluorescent substance was disperse | distributed 10c: Circuit wiring 201, 202: III group nitride compound semiconductor light emitting element 4: Sealing resin in which 3 primary color fluorescent substance was disperse | distributed 5: High Reflective film made of reflective metal A: Light emitting region of group III nitride compound semiconductor light emitting device 201, 202

Claims (2)

蛍光体又は光拡散材料が分散された回路配線基板と、
前記回路配線基板の光取り出し側である第1の面とは異なる第2の面上に配置され、回路配線に接続された発光ダイオードと、
前記発光ダイオードを封止する、蛍光体又は光拡散材料が分散された樹脂と、
前記樹脂を覆い、前記発光ダイオードからの光を前記回路配線基板側に反射する反射膜とを有することを特徴とする面光源。
A circuit wiring board in which phosphors or light diffusion materials are dispersed;
A light emitting diode disposed on a second surface different from the first surface on the light extraction side of the circuit wiring board and connected to the circuit wiring;
A resin in which a phosphor or a light diffusing material is dispersed to seal the light emitting diode;
A surface light source comprising: a reflective film that covers the resin and reflects light from the light emitting diode toward the circuit wiring board.
請求項1に記載の面光源を有し、
前記回路配線基板の前記第1の面と平行な表示面を有することを特徴とする液晶表示装置。
The surface light source according to claim 1,
A liquid crystal display device having a display surface parallel to the first surface of the circuit wiring board.
JP2007105140A 2007-04-12 2007-04-12 Planar light source, and liquid crystal display device Pending JP2008263083A (en)

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JP2010147191A (en) * 2008-12-17 2010-07-01 Panasonic Electric Works Co Ltd Light-emitting device
JP2010147445A (en) * 2008-12-22 2010-07-01 Panasonic Electric Works Co Ltd Light-emitting device
WO2014038506A1 (en) * 2012-09-04 2014-03-13 株式会社ノリタケカンパニーリミテド Led element mounting substrate, led light source and led display
WO2016085297A1 (en) * 2014-11-28 2016-06-02 Iljin Led Co., Ltd. Nitride semiconductor light emitting chip and light emitting device having the same
CN112005388A (en) * 2018-04-20 2020-11-27 同和电子科技有限公司 Deep ultraviolet light-emitting element
CN112241085A (en) * 2019-07-16 2021-01-19 三星显示有限公司 Light source unit

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010147191A (en) * 2008-12-17 2010-07-01 Panasonic Electric Works Co Ltd Light-emitting device
JP2010147445A (en) * 2008-12-22 2010-07-01 Panasonic Electric Works Co Ltd Light-emitting device
WO2014038506A1 (en) * 2012-09-04 2014-03-13 株式会社ノリタケカンパニーリミテド Led element mounting substrate, led light source and led display
JPWO2014038506A1 (en) * 2012-09-04 2016-08-08 株式会社ノリタケカンパニーリミテド LED element mounting substrate, LED light source and LED display
US9443831B2 (en) 2012-09-04 2016-09-13 Noritake Co., Limited Substrate for mounting LED element, LED light source and LED display
WO2016085297A1 (en) * 2014-11-28 2016-06-02 Iljin Led Co., Ltd. Nitride semiconductor light emitting chip and light emitting device having the same
CN112005388A (en) * 2018-04-20 2020-11-27 同和电子科技有限公司 Deep ultraviolet light-emitting element
CN112005388B (en) * 2018-04-20 2024-06-14 同和电子科技有限公司 Deep ultraviolet light-emitting element
CN112241085A (en) * 2019-07-16 2021-01-19 三星显示有限公司 Light source unit
CN112241085B (en) * 2019-07-16 2024-11-08 三星显示有限公司 Light source unit

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